Metal curved surface substrate film thermocouple sensor for crystallizer

Abstract

The invention discloses a metal curved surface substrate film thermocouple sensor for a crystallizer, which comprises a high-temperature alloy substrate, an aluminum oxide transition layer, an aluminum oxide insulating layer, a sensitive layer and a protective layer, and is characterized in that the aluminum oxide transition layer, the aluminum oxide insulating layer, the sensitive layer and the protective layer are sequentially prepared on the high-temperature alloy substrate; the surface, making contact with the aluminum oxide transition layer, of the high-temperature alloy substrate is of a curved surface structure. The sensor can measure the temperature of a curved surface structural part at the ultrahigh temperature.

Description

Technical Field

[0001] The invention belongs to the technical field of high-temperature temperature measurement and relates to a thin-film thermocouple sensor on a metal curved surface substrate for a crystallizer. Background Art

[0002] In the fields of iron and steel metallurgy, temperature is an important parameter in the production process, which will affect the efficiency of the crystallizer. It needs to be accurately and in real time. Therefore, a device that can measure the surface temperature of complex metal structures is needed. However, similar measuring devices in the prior art are mostly developed based on ceramic substrates, and the highest temperature of metal substrates rarely exceeds 1000°C. Therefore, thin film thermocouples are an important means of temperature measurement. The working principle of thin film thermocouples is based on the thermoelectric effect. When two different metals form a closed loop and are subject to a temperature difference, a potential difference will be generated. Thin film thermocouples are composed of thin films of two different metal materials. These two metal film layers are prepared on ceramic or thin film substrates by thermal evaporation, physical vapor deposition or chemical vapor deposition, and their two ends are connected together to form the two ends of the thermocouple. When the thin film thermocouple is heated, the electrons of the two metal materials will be affected by different degrees of thermal energy, thereby generating a potential difference at the connection point. By measuring this potential difference, the temperature of the location of the thin film thermocouple can be determined. In addition, most high-temperature components are curved surfaces, while most of the current thin-film thermocouples are developed based on planes, with small thermoelectric output signals and poor anti-interference capabilities. For example, the publication number is CN109338290A, a thin-film temperature sensor, comprising a transition layer, a thermal growth layer, an insulating layer and a thermocouple layer connected in sequence and arranged on an aircraft engine turbine blade. The thermocouple layer is formed by overlapping a first thermocouple and a second thermocouple head to head, and the overlapping portion constitutes a hot junction, i.e., a measuring end. The lead wires are made of filaments of the same material as the first thermocouple and the second thermocouple, respectively, and are connected to the tails of the first thermocouple and the second thermocouple respectively through high-temperature conductive adhesive. It adopts a planar design and cannot be used for temperature measurement of curved surface structural parts. Summary of the invention

[0003] The object of the present invention is to overcome the above-mentioned shortcomings of the prior art and provide a thin film thermocouple sensor for a metal curved surface substrate of a crystallizer, which can realize the temperature measurement of curved surface structural parts under ultra-high temperature.

[0004] To achieve the above-mentioned purpose, the present invention discloses a thin film thermocouple sensor for a metal curved surface substrate of a crystallizer, comprising a high-temperature alloy substrate, an aluminum oxide transition layer, an aluminum oxide insulating layer, a sensitive layer and a protective layer, wherein the aluminum oxide transition layer, the aluminum oxide insulating layer, the sensitive layer and the protective layer are sequentially prepared on the high-temperature alloy substrate, and the surface of the high-temperature alloy substrate in contact with the aluminum oxide transition layer is a curved surface structure.

[0005] Furthermore, the aluminum oxide transition layer is prepared on the high-temperature alloy substrate by atomic layer deposition.

[0006] Furthermore, the sensitive layer includes a thermoelectric positive electrode and a thermoelectric negative electrode, wherein the overlapping position of the thermoelectric positive electrode and the thermoelectric negative electrode forms a temperature measurement hot node.

[0007] Furthermore, the material of the thermoelectric positive electrode is platinum-rhodium alloy; the material of the thermoelectric negative electrode is indium oxide thermoelectric material.

[0008] Furthermore, the preparation process of the indium oxide thermoelectric material is as follows:

[0009] Aluminum oxide nano powder and indium oxide powder are mixed and ball-milled, and then tableted. Then, the mixture is sintered at a high temperature, ground and ball-milled, and dried to obtain indium oxide thermoelectric material.

[0010] Furthermore, the material of the protective layer is aluminum oxide.

[0011] Furthermore, the thickness of the protective layer is greater than or equal to 10 um.

[0012] The present invention discloses a thin-film thermocouple sensor with a metal curved surface substrate for a crystallizer, comprising a high-temperature alloy substrate, an aluminum oxide transition layer, an aluminum oxide insulating layer, a sensitive layer and a protective layer, wherein the aluminum oxide transition layer, the aluminum oxide insulating layer, the sensitive layer and the protective layer are sequentially prepared on the high-temperature alloy substrate, and the surface of the high-temperature alloy substrate in contact with the aluminum oxide transition layer is a curved surface structure; the material of the thermoelectric negative electrode is an indium oxide thermoelectric material, and the indium oxide thermoelectric material is prepared by aluminum oxide nanopowder and indium oxide powder.

[0013] Furthermore, the preparation process of the indium oxide thermoelectric material is as follows:

[0014] Aluminum oxide nano powder and indium oxide powder are mixed and ball-milled, and then tableted. Then, the mixture is sintered at a high temperature, ground and ball-milled, and dried to obtain indium oxide thermoelectric material.

[0015] Furthermore, the high temperature sintering temperature is 1400°C to 1500°C.

[0016] The present invention has the following beneficial effects:

[0017] In the specific operation of the metal curved surface substrate thin film thermocouple sensor for the crystallizer described in the present invention, the aluminum oxide transition layer, the aluminum oxide insulating layer, the sensitive layer and the protective layer are sequentially prepared on the high temperature alloy substrate to form a thin film thermocouple sensor. In addition, the surface of the high temperature alloy substrate in contact with the aluminum oxide transition layer is a curved surface structure, which can realize the temperature measurement of curved surface structural parts under ultra-high temperature and expand the application range of thin film thermocouples. In addition, the present invention adopts a multi-layer thin film design, which can greatly enhance the bonding force between the film layers and ensure the reliability of temperature measurement in complex environments.

[0018] Furthermore, the aluminum oxide transition layer is prepared on the high-temperature alloy substrate by atomic layer deposition. The aluminum oxide transition layer prepared by atomic layer deposition can form a chemical bond with the high-temperature alloy substrate to enhance the bonding force and lay a foundation for the subsequent preparation of the aluminum oxide insulating layer.

[0019] Furthermore, the material of the thermoelectric negative electrode is indium oxide thermoelectric material, and the indium oxide thermoelectric material is prepared by aluminum oxide nanopowder and indium oxide powder, which can increase the signal output of the thin film thermocouple and enhance the anti-interference ability. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0021] Figure 1 It is a structural diagram of the present invention;

[0022] Figure 2 An exploded view of the present invention;

[0023] Figure 3 It is a structural diagram of the sensitive layer 4 in the present invention.

[0024] Among them, 1 is a high-temperature alloy substrate, 2 is an aluminum oxide transition layer, 3 is an aluminum oxide insulating layer, 4 is a sensitive layer, 5 is a thermoelectric positive electrode, 6 is a thermoelectric negative electrode, 7 is a temperature measurement hot node, and 8 is a protective layer. DETAILED DESCRIPTION

[0025] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] In the description of the present invention, it should be understood that the terms “include” and “comprises” indicate the presence of described features, wholes, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, wholes, steps, operations, elements, components and / or collections thereof.

[0027] It should also be understood that the terms used in the present specification are only for the purpose of describing specific embodiments and are not intended to limit the present invention. As used in the present specification and the appended claims, unless the context clearly indicates otherwise, the singular forms "a", "an" and "the" are intended to include plural forms.

[0028] It should be further understood that the term "and / or" used in the present specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes these combinations. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in the present invention generally indicates that the associated objects are in an "or" relationship.

[0029] It should be understood that, although the terms first, second, third, etc. may be used to describe preset ranges, etc. in the embodiments of the present invention, these preset ranges should not be limited to these terms. These terms are only used to distinguish preset ranges from each other. For example, without departing from the scope of the embodiments of the present invention, the first preset range may also be referred to as the second preset range, and similarly, the second preset range may also be referred to as the first preset range.

[0030] The word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining" or "in response to detecting", depending on the context. Similarly, the phrases "if it is determined" or "if (stated condition or event) is detected" may be interpreted as "when it is determined" or "in response to determining" or "when detecting (stated condition or event)" or "in response to detecting (stated condition or event)", depending on the context.

[0031] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. The components of the embodiments of the present invention described and shown in the drawings here can usually be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0032] Various structural schematic diagrams of the embodiments disclosed in the present invention are shown in the accompanying drawings. These figures are not drawn to scale, and some details are magnified and some details may be omitted for the purpose of clear expression. The shapes of various regions and layers shown in the figures and the relative sizes and positional relationships therebetween are only exemplary, and may deviate in practice due to manufacturing tolerances or technical limitations, and those skilled in the art may additionally design regions / layers with different shapes, sizes, and relative positions according to actual needs.

[0033] As is known, the crystallizer is a common experimental and industrial equipment. The following is a detailed introduction to the crystallizer: The crystallizer is a trough-shaped container used to separate crystals from a solution. Crystallizers are widely used in the treatment of wastewater and organic solutions in the fields of chemical, pharmaceutical, food, smelting, photovoltaic, papermaking, and garbage disposal. In particular, in continuous casting machines, the crystallizer is a key device that receives the molten steel injected from the intermediate tank and solidifies it into a solid shell according to the specified cross-sectional shape. The working principle of the crystallizer is: The working principle of the crystallizer is based on the physical and chemical laws of solubility and crystallization process. In the crystallizer, the solute in the solution gradually reaches a saturated state as the solvent evaporates or the temperature decreases, and then condenses into crystals. In this process, temperature control, solution solubility, and crystallizer design all play a vital role. The types and structures of crystallizers are: According to different uses and structures, crystallizers can be divided into many types: Classification by use: Cooling crystallizer: The solute is crystallized by lowering the temperature of the solution. Evaporation crystallizer: The solvent is evaporated by heating, thereby increasing the concentration of the solution and crystallizing the solute. Classification by structure: Tube-type crystallizer: It has two layers of inner and outer tubes, the inner layer is used to hold the solution, and the outer layer is used for heating or cooling. Combined crystallizer: It is composed of multiple components with different functions to adapt to the complex crystallization process. In order to ensure that the crystallizer has good thermal conductivity, wear resistance, mechanical strength and hardness, and extend its service life, the inner wall material is mainly made of copper-based alloys, such as red copper, copper-silver alloy, phosphorus deoxidized copper and copper-beryllium alloy, chromium-zirconium-copper alloy, etc. Some also add plating on the surface of the copper wall, such as chrome plating or nickel plating, tungsten, iron and three-layer nickel plating, nickel-phosphorus alloy and chromium, to further improve the wear resistance and smoothness of the inner wall and reduce the resistance to billet drawing. At present, evaporation crystallizer is the mainstream product in the crystallizer market, and is widely used in scenes such as landfill leachate treatment, furfural wastewater treatment, papermaking black liquor concentration, crystalline silicon wastewater evaporation, ammonium sulfate evaporation crystallization, etc. With the continuous advancement of science and technology and the acceleration of the industrialization process, the application of crystallizers in various fields will be more extensive, and the market prospects are promising.

[0034] Thin film thermocouple sensor is a temperature sensor made of thin film technology. Its working principle is based on the thermoelectric effect. The following is a detailed introduction to thin film thermocouple sensor:

[0035] The working principle of the thin film thermocouple sensor is as follows: The thin film thermocouple sensor is composed of two metal films of different materials. When the temperature at the contact point of the two metal films changes, a thermal current will be generated due to the thermoelectric effect. By measuring the magnitude of this thermal current, the temperature of the object being measured can be obtained. The advantages of thin film thermocouple sensors are: High precision: Thin film technology can produce high-precision sensors to meet the strict requirements for temperature measurement accuracy. High response speed: The thin film thermocouple sensor has a fast response speed and can quickly capture temperature changes. Good anti-interference performance: Due to its special structure and manufacturing process, the thin film thermocouple sensor has excellent anti-interference performance and can work stably in complex environments. The application scope of thin film thermocouple sensors is: Industrial field: Thin film thermocouple sensors are widely used in industrial fields, such as steel metallurgy, aerospace, chemical industry, petroleum, light industry and other industries. In these industries, thin film thermocouple sensors are often used for temperature measurement in processes such as smelting metals, drying, and heat treatment. Biomedical field: In the biomedical field, thin film thermocouple sensors can be used to measure body surface temperature, body cavity temperature, and temperature of tissues and blood. This is of great significance for monitoring human tissue temperature and medical research.

[0036] Embodiment 1

[0037] The metal curved surface substrate thin film thermocouple sensor for a crystallizer described in the present invention comprises a high-temperature alloy substrate 1, an aluminum oxide transition layer 2, an aluminum oxide insulating layer 3, a sensitive layer 4 and a protective layer 8, wherein the aluminum oxide transition layer 2, the aluminum oxide insulating layer 3, the sensitive layer 4 and the protective layer 8 are sequentially prepared on the high-temperature alloy substrate 1, and the surface of the high-temperature alloy substrate 1 in contact with the aluminum oxide transition layer 2 is a curved surface structure.

[0038] It should be noted that the present invention adopts a multi-layer thin film design, which can greatly enhance the bonding force between the film layers and ensure the reliability of temperature measurement in complex environments. In addition, the surface of the high-temperature alloy substrate 1 that contacts the alumina transition layer 2 is a curved structure, which can realize the temperature measurement of curved surface structural parts under ultra-high temperatures.

[0039] As an embodiment of the present invention, the aluminum oxide transition layer 2 is prepared on the high-temperature alloy substrate 1 by atomic layer deposition. The aluminum oxide transition layer 2 prepared by the atomic layer deposition method can form a chemical bond with the high-temperature alloy substrate 1 to enhance the bonding force and lay the foundation for the subsequent preparation of the aluminum oxide insulating layer 3.

[0040] As an embodiment of the present invention, the sensitive layer 4 includes a thermoelectric positive electrode 5 and a thermoelectric negative electrode 6, wherein the overlapping position of the thermoelectric positive electrode 5 and the thermoelectric negative electrode 6 forms a temperature measuring hot node 7. In the present invention, the number of the temperature measuring hot nodes 7 is multiple, which can realize the distribution measurement of the surface temperature.

[0041] Embodiment 2

[0042] The metal curved surface substrate thin film thermocouple sensor for a crystallizer described in the present invention comprises a high-temperature alloy substrate 1, an aluminum oxide transition layer 2, an aluminum oxide insulating layer 3, a sensitive layer 4 and a protective layer 8, wherein the aluminum oxide transition layer 2, the aluminum oxide insulating layer 3, the sensitive layer 4 and the protective layer 8 are sequentially prepared on the high-temperature alloy substrate 1, and the surface of the high-temperature alloy substrate 1 in contact with the aluminum oxide transition layer 2 is a curved surface structure.

[0043] The material of the thermoelectric positive electrode 5 is a platinum-rhodium alloy; the material of the thermoelectric negative electrode 6 is an indium oxide thermoelectric material, and the preparation process of the indium oxide thermoelectric material is as follows:

[0044] Alumina nanopowder and indium oxide powder are mixed in a ball mill with an alumina ratio of 1% to 5%. The mixed powder is pressed into tablets, and then sintered at a high temperature of 1400°C to 1500°C in a muffle furnace. The sintered tablets are ground into pieces using an agate mortar, and finally ball-milled using a ball mill. After drying, the prepared indium oxide thermoelectric material is obtained.

[0045] As an embodiment of the present invention, the material of the protective layer 8 is aluminum oxide, which is used to protect the thermoelectric positive electrode 5 and the thermoelectric negative electrode 6 and enhance their service performance in harsh environments.

[0046] Embodiment 3

[0047] The metal curved surface substrate thin film thermocouple sensor for a crystallizer described in the present invention comprises a high-temperature alloy substrate 1, an aluminum oxide transition layer 2, an aluminum oxide insulating layer 3, a sensitive layer 4 and a protective layer 8, wherein the aluminum oxide transition layer 2, the aluminum oxide insulating layer 3, the sensitive layer 4 and the protective layer 8 are sequentially prepared on the high-temperature alloy substrate 1, and the surface of the high-temperature alloy substrate 1 in contact with the aluminum oxide transition layer 2 is a curved surface structure.

[0048] The aluminum oxide transition layer 2 is prepared on the high-temperature alloy substrate 1 by atomic layer deposition; the sensitive layer 4 includes a thermoelectric positive electrode 5 and a thermoelectric negative electrode 6, wherein the overlapping position of the thermoelectric positive electrode 5 and the thermoelectric negative electrode 6 forms a temperature measuring hot node 7; the material of the thermoelectric positive electrode 5 is a platinum-rhodium alloy; the material of the thermoelectric negative electrode 6 is an indium oxide thermoelectric material, wherein the preparation process of the indium oxide thermoelectric material is: mixing aluminum oxide nanopowder and indium oxide powder, ball milling, pressing, high-temperature sintering, grinding, ball milling, and drying to obtain the indium oxide thermoelectric material; the material of the protective layer 8 is aluminum oxide; the thickness of the protective layer 8 is greater than or equal to 10um.

[0049] It should be noted that the multi-layer thin film design adopted in the present invention can greatly enhance the bonding force between the film layers and ensure the reliability of temperature measurement in complex environments; the designed and prepared indium oxide material can increase the signal output of the thin film thermocouple and enhance the anti-interference ability; in addition, the ultra-high temperature thin film thermocouple developed based on the metal surface can realize the surface temperature measurement of various complex structures of high-temperature flow channels, expanding the application range of thin film thermocouples.

[0050] In addition, it should be noted that in the field of iron and steel metallurgy, the temperature monitoring of the crystallizer will affect the efficiency of crystallization. In order to solve the problem of in-situ non-turbine temperature measurement, thin film thermocouple temperature measurement technology has been proposed. At present, in the field of thin film temperature measurement, most of the thin film thermocouples that can be used for high temperature are ceramic substrates, and the temperature measurement of metal substrates generally does not exceed 1000°C. And there are problems such as small signal output and poor anti-interference ability. In view of the above problems, the present invention has developed an indium oxide thermoelectric material, designed and prepared a thin film thermocouple based on a metal substrate, which can perform temperature measurement in an ultra-high temperature environment, and realize in-situ temperature measurement of metal ultra-high temperature components.

[0051] Those skilled in the art will readily appreciate other embodiments of the present invention after considering the specification and disclosure of the invention. This application is intended to cover any variations, uses or adaptations of the present invention that follow the general principles of the present invention and include common knowledge or customary techniques in the art that are not disclosed by the present invention. The specification and examples are to be considered exemplary only, and the true scope and spirit of the present invention are indicated by the following claims.

[0052] It should be understood that the present invention is not limited to the exact construction that has been described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.

[0053] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any way. Any simple modification, change and equivalent structural change made to the above embodiment based on the technical essence of the present invention still falls within the protection scope of the technical solution of the present invention.

Claims

1. A thin film thermocouple sensor for a metal curved surface substrate of a crystallizer, characterized in that: The invention comprises a high-temperature alloy substrate (1), an aluminum oxide transition layer (2), an aluminum oxide insulating layer (3), a sensitive layer (4) and a protective layer (8), wherein the aluminum oxide transition layer (2), the aluminum oxide insulating layer (3), the sensitive layer (4) and the protective layer (8) are sequentially prepared on the high-temperature alloy substrate (1), and the surface of the high-temperature alloy substrate (1) in contact with the aluminum oxide transition layer (2) is a curved surface structure.

2. The thin film thermocouple sensor for a metal curved surface substrate used for a crystallizer according to claim 1, characterized in that: The aluminum oxide transition layer (2) is prepared on the high-temperature alloy substrate (1) by atomic layer deposition.

3. The metal curved substrate thin film thermocouple sensor for a crystallizer according to claim 1, characterized in that: The sensitive layer (4) comprises a thermoelectric positive electrode (5) and a thermoelectric negative electrode (6), wherein the overlapping position of the thermoelectric positive electrode (5) and the thermoelectric negative electrode (6) forms a temperature measurement hot node (7).

4. The thin film thermocouple sensor for a metal curved surface substrate used for a crystallizer according to claim 1, characterized in that: The material of the thermoelectric positive electrode (5) is a platinum-rhodium alloy; the material of the thermoelectric negative electrode (6) is an indium oxide thermoelectric material.

5. The thin film thermocouple sensor for a metal curved surface substrate used for a crystallizer according to claim 4, characterized in that: The preparation process of the indium oxide thermoelectric material is as follows: Aluminum oxide nano powder and indium oxide powder are mixed and ball-milled, and then tableted. Then, the mixture is sintered at a high temperature, ground and ball-milled, and dried to obtain indium oxide thermoelectric material.

6. The thin film thermocouple sensor for a metal curved surface substrate used for a crystallizer according to claim 1, characterized in that: The material of the protective layer (8) is aluminum oxide.

7. The thin film thermocouple sensor for a metal curved surface substrate used for a crystallizer according to claim 1, characterized in that: The thickness of the protective layer (8) is greater than or equal to 10 um.

8. A thin film thermocouple sensor for a metal curved surface substrate of a crystallizer, characterized in that: The invention comprises a high-temperature alloy substrate (1), an aluminum oxide transition layer (2), an aluminum oxide insulating layer (3), a sensitive layer (4) and a protective layer (8), wherein the aluminum oxide transition layer (2), the aluminum oxide insulating layer (3), the sensitive layer (4) and the protective layer (8) are sequentially prepared on the high-temperature alloy substrate (1), and the surface of the high-temperature alloy substrate (1) in contact with the aluminum oxide transition layer (2) is a curved surface structure; the material of the thermoelectric negative electrode (6) is an indium oxide thermoelectric material, and the indium oxide thermoelectric material is prepared by aluminum oxide nanopowder and indium oxide powder.

9. The thin film thermocouple sensor for a metal curved surface substrate used for a crystallizer according to claim 8, characterized in that: The preparation process of the indium oxide thermoelectric material is as follows: Aluminum oxide nano powder and indium oxide powder are mixed and ball-milled, and then tableted. Then, the mixture is sintered at a high temperature, ground and ball-milled, and dried to obtain indium oxide thermoelectric material.

10. The thin film thermocouple sensor for a metal curved surface substrate used in a crystallizer according to claim 9, characterized in that: The high temperature sintering temperature is 1400℃~1500℃.

Images