Pressure sensor, preparation method of pressure sensor, semiconductor processing equipment and monitoring method of semiconductor processing equipment

Abstract

The invention provides a pressure sensor, a preparation method of the pressure sensor, semiconductor processing equipment and a monitoring method of the semiconductor processing equipment, relates to the technical field of semiconductor processing equipment, and aims to solve the problem that a semiconductor device prepared by the semiconductor processing equipment is low in manufacturing yield. The pressure sensor comprises a capacitor, a first insulating layer and a first inductance coil. The capacitor comprises a first pole plate and a second pole plate which are oppositely arranged. A pressure resonant cavity exists between the first pole plate and the second pole plate. The first insulating layer is at least partially located on one side of the second pole plate away from the first pole plate. The first inductance coil is located on one side of the first insulation layer away from the second pole plate. The first inductance coil and the capacitor are connected in series to form a pressure sensing loop. Parameters of resonance signals in the pressure sensing loop are used for representing the value of pressure borne by the surface of the side, away from the second pole plate, of the first pole plate. The pressure sensor is applied to semiconductor processing equipment so as to improve the manufacturing yield of semiconductor devices.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor processing equipment, and in particular to a pressure sensor and a preparation method thereof, semiconductor processing equipment and a monitoring method thereof. Background Art

[0002] Semiconductor processing equipment (such as furnace equipment) can be used to epitaxially grow semiconductor materials on the surface of wafers to prepare semiconductor devices. With the development of display technology, the requirements for the precision of semiconductor processing equipment are getting higher and higher because the size requirements of each film layer in semiconductor devices are becoming more and more precise. The requirements for the dimensional accuracy and uniformity of the film layer thickness in the semiconductor device formed by the deposition process in the semiconductor processing equipment are also getting higher and higher.

[0003] However, semiconductor devices manufactured by current semiconductor processing equipment have the problem of low manufacturing yield. Summary of the invention

[0004] The embodiments of the present disclosure provide a pressure sensor and a method for manufacturing the same, a semiconductor processing device and a monitoring method thereof, aiming to solve the problem of low manufacturing yield of semiconductor devices manufactured by semiconductor processing equipment.

[0005] To achieve the above objectives, the embodiments of the present disclosure adopt the following technical solutions:

[0006] On the one hand, a pressure sensor is provided. The pressure sensor includes a capacitor, a first insulating layer and a first inductor. The capacitor includes a first electrode plate and a second electrode plate. The first electrode plate and the second electrode plate are arranged opposite to each other. A pressure resonance cavity exists between the first electrode plate and the second electrode plate. The first insulating layer is at least partially located on a side of the second electrode plate away from the first electrode plate. The first inductor is located on a side of the first insulating layer away from the second electrode plate. The first end of the first inductor is coupled to the first electrode plate, the second end of the first inductor is coupled to the second electrode plate, and the first inductor and the capacitor together form a pressure sensing circuit.

[0007] In the pressure sensor provided by the above-mentioned embodiment of the present disclosure, the first inductor coil and the capacitor can form a pressure sensing circuit together. The pressure sensing surface of the capacitor can sense the pressure it is subjected to, and the change in pressure can cause the capacitance value of the capacitor to change, and the change in capacitance value can cause the resonant signal generated in the pressure sensing circuit to also change. By acquiring the resonant signal in the pressure sensing circuit, the pressure value of the pressure sensing surface can be detected. In addition, the first insulating layer can be located between the first inductor coil and the capacitor, so that the first inductor coil and the capacitor can be arranged at intervals, the parasitic capacitance between the second plate and the first inductor coil in the capacitor can be reduced, and the stability of the pressure sensing circuit formed by the capacitor and the first inductor coil in series can be improved, thereby improving the stability and accuracy of the pressure sensor. The pressure sensor provided by the present disclosure can be applied to semiconductor processing equipment. The pressure sensor can be used to monitor in real time whether the components in the semiconductor processing equipment are broken, so as to replace or repair the broken components in time, thereby improving the manufacturing yield of the semiconductor device prepared by the semiconductor processing equipment.

[0008] In some embodiments, the pressure sensor further comprises a pressure sensing film. The pressure sensing film comprises a main body and a frame portion connected to each other. The main body is located on a side of the first electrode plate away from the second electrode plate. The frame portion at least surrounds the peripheral side of the main body.

[0009] In some embodiments, the pressure sensing film and the first insulating layer together form a first accommodation cavity. The first electrode plate and the second electrode plate are both located in the first accommodation cavity.

[0010] In some embodiments, a portion of the frame portion extending from the main body portion in a direction away from the first insulating layer and the main body portion together form a receiving groove.

[0011] In some embodiments, the pressure sensor further includes a second inductor coil. The second inductor coil is located on a side of the first inductor coil away from the first insulating layer. The second inductor coil is arranged opposite to and spaced from the first inductor coil.

[0012] In some embodiments, in a direction perpendicular to the first electrode plate, the spacing distance between the first electrode plate and the second electrode plate is [0.5cm, 3cm]; the distance between the second electrode plate and the first inductor coil is [1cm, 3cm]; the spacing distance between the first inductor coil and the second inductor coil is [0.5cm, 2cm].

[0013] In some embodiments, the pressure sensor further comprises a base. The base comprises a substrate and a wall body connected to each other. The substrate is located on a side of the second inductor coil away from the first inductor coil. The wall body at least surrounds a peripheral side of the substrate. The base and the first insulating layer together form a second accommodating cavity. The first inductor coil and the second inductor coil are both located in the second accommodating cavity.

[0014] In some embodiments, the pressure sensor further comprises a second insulating layer and a third insulating layer. The second insulating layer is located between the second inductor coil and the base. The third insulating layer is located on a side of the first electrode plate away from the second electrode plate.

[0015] In some embodiments, the pressure sensor further comprises a fourth insulating layer. The fourth insulating layer is located between the second electrode plate and the first inductor coil. Through holes are provided in the fourth insulating layer and the first insulating layer. The second end of the first inductor coil is connected to the second electrode plate through the through hole.

[0016] On the other hand, a method for preparing a pressure sensor is provided. The method for preparing the pressure sensor includes: forming a first insulating layer, and forming a second electrode plate on one side of the first insulating layer. Forming a first electrode plate, wherein the first electrode plate and the second electrode plate are arranged opposite to each other, and a pressure resonance cavity exists between the first electrode plate and the second electrode plate; the first electrode plate and the second electrode plate together form a capacitor. Forming a first inductor coil on a side of the first insulating layer away from the second electrode plate. The first end of the first inductor coil is coupled to the first electrode plate, and the second end of the first inductor coil is coupled to the second electrode plate, and the first inductor coil and the capacitor together form a pressure sensing circuit.

[0017] The method for preparing the pressure sensor provided in the embodiments of the present disclosure, based on preparing the pressure sensor as in any of the above embodiments, also has the beneficial technical effects of the above pressure sensor, which will not be described in detail here.

[0018] In some embodiments, the forming of the first electrode plate includes: forming a pressure-sensitive film. The pressure-sensitive film includes a main body and a frame portion connected to each other. The frame portion at least surrounds the peripheral side of the main body. A third insulating layer and the first electrode plate are sequentially formed on one side of the main body. The pressure-sensitive film and the first insulating layer together enclose a first accommodating cavity; the first electrode plate and the second electrode plate are both located in the first accommodating cavity.

[0019] In some embodiments, the method for preparing the pressure sensor further includes: forming a base, and sequentially forming a second insulating layer and a second inductor coil on the base. The second inductor coil is arranged opposite to and spaced from the first inductor coil. The base and the first insulating layer together form a second accommodating cavity, and the first inductor coil and the second inductor coil are both located in the second accommodating cavity.

[0020] On the other hand, a semiconductor processing device is provided. The semiconductor processing device includes a shell, an air inlet pipe, a rotating shaft and a pressure sensor. The pressure sensor is a pressure sensor as described in any of the above embodiments. The shell includes a shell wall and a base; the shell wall and the base together form a storage cavity. The air inlet pipe at least partially extends into the storage cavity. The rotating shaft is located in the storage cavity. The pressure sensor is located in the storage cavity, and the pressure sensor is located between the air inlet pipe and the base. The orthographic projection of the pressure sensor on the base at least partially covers the orthographic projection of the air inlet pipe located in the storage cavity on the base. The pressure sensor surrounds the circumference of the rotating shaft.

[0021] In the semiconductor processing equipment provided by the above-mentioned embodiments of the present disclosure, the broken intake pipe residue can fall onto the pressure sensor, and the pressure sensor can be used to monitor in real time whether the intake pipe is broken, so as to timely replace or repair the broken intake pipe, thereby ensuring the quality accuracy of the semiconductor material transported through the intake pipe, and improving the film layer size accuracy and film layer thickness uniformity of the prepared semiconductor device, thereby improving the manufacturing yield of the semiconductor device prepared by the semiconductor processing equipment.

[0022] On the other hand, a monitoring method for semiconductor processing equipment is provided. The monitoring method for semiconductor processing equipment is applied to the semiconductor processing equipment as described in the above embodiment. The monitoring method for semiconductor processing equipment includes: obtaining a resonant signal of the pressure sensor. Determining a target parameter of the resonant signal, the target parameter is used to characterize the pressure value to which the pressure sensor is subjected. The target parameter includes at least one of frequency, amplitude and phase. When the pressure value to which the pressure sensor is subjected represented by the target parameter is greater than or equal to a preset first pressure threshold, an alarm signal is issued.

[0023] In the monitoring method for semiconductor processing equipment provided by the above-mentioned embodiment of the present disclosure, the broken intake pipe residue falls onto the pressure sensor, and the possible breakage of the intake pipe can be monitored in real time through the pressure sensor. By comparing the pressure value of the pressure sensor represented by the target parameter and the preset first pressure threshold, the pressure sensor can monitor the possible breakage of the intake pipe and promptly feedback through an alarm signal, so as to promptly confirm the condition of the intake pipe. When the intake pipe is confirmed to be broken, the intake pipe can be repaired or replaced in time, ensuring the quality accuracy of the semiconductor material transported through the intake pipe, improving the film layer size accuracy and film layer thickness uniformity of the prepared semiconductor device, and thus improving the manufacturing yield of the semiconductor device prepared by the semiconductor processing equipment.

[0024] In some embodiments, when the pressure value of the pressure sensor represented by the target parameter is greater than or equal to a preset second pressure threshold, the semiconductor processing equipment is controlled to stop working. The second pressure threshold is greater than or equal to the first pressure threshold. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can also be obtained based on these drawings. In addition, the drawings described below can be regarded as schematic diagrams, and are not limitations on the actual size of the products involved in the embodiments of the present disclosure, the actual process of the method, etc.

[0026] Figure 1 A structural diagram of a semiconductor processing equipment;

[0027] Figure 2 A structural diagram of a semiconductor processing device provided according to some embodiments;

[0028] Figure 3 A structural diagram of a base and a rotating shaft in a semiconductor processing device provided according to some embodiments;

[0029] Figure 4 A structural diagram of a pressure sensor and a rotating shaft provided according to some embodiments;

[0030] Figure 5 for Figure 4 Enlarged view of the middle F area;

[0031] Figure 6 A structural diagram of a pressure sensor and a rotating shaft provided according to some embodiments;

[0032] Figure 7A top view of a first inductor coil or a second inductor coil provided according to some embodiments;

[0033] Figure 8 A top view of a first inductor coil or a second inductor coil provided according to some embodiments;

[0034] Fig. 9 is an equivalent circuit diagram of a pressure sensor provided according to some embodiments;

[0035] Fig.10 A flow chart of a method for preparing a pressure sensor according to some embodiments;

[0036] Fig.11A A flow chart of a method for preparing a pressure sensor according to some embodiments;

[0037] Fig. 11B is a structural diagram of a pressure sensor provided according to some embodiments;

[0038] Fig. 12A A flow chart of a method for preparing a pressure sensor according to some embodiments;

[0039] Fig. 12B is a structural diagram of a pressure sensor provided according to some embodiments;

[0040] Figure 13 to Figure 15 They are respectively flow charts of a monitoring method for semiconductor processing equipment provided according to some embodiments. DETAILED DESCRIPTION

[0041] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present disclosure.

[0042] In the description of the present disclosure, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0043] Unless the context requires otherwise, throughout the specification and claims, the term "including" is to be interpreted as an open, inclusive meaning, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "exemplarily" or "some examples" and the like are intended to indicate that specific features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the specific features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0044] In the following, the terms "first" and "second" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0045] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. For example, when describing some embodiments, the term "connected" may be used to indicate that two or more components are in direct physical or electrical contact with each other. For another example, when describing some embodiments, the term "coupled" may be used to indicate that two or more components are in direct physical or electrical contact. However, the term "coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0046] “At least one of A, B, and C” has the same meaning as “at least one of A, B, or C” and both include the following combinations of A, B, and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B, and C.

[0047] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0048] The use of "adapted to" or "configured to" herein is meant to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0049] Additionally, the use of “based on” is meant to be open and inclusive, as a process, step, calculation, or other action “based on” one or more stated conditions or values ​​may, in practice, be based on additional conditions or values ​​beyond those stated.

[0050] In the context of the present disclosure, the meanings of “on,” “over,” and “over” should be interpreted in the broadest manner, so that “on” means not only “directly on something,” but also includes the meaning of “on something” with intervening features or layers therebetween, and “over” or “above” means not only “above” or “over” something, but also includes the meaning of “above” or “over” something without intervening features or layers therebetween (i.e., directly on something).

[0051] Exemplary embodiments are described herein with reference to cross-sectional views and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are conceivable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but include shape deviations due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device, and are not intended to limit the scope of the exemplary embodiments.

[0052] Figure 1 This is a structural diagram of a semiconductor processing equipment.

[0053] At present, semiconductor processing equipment 001 may include a housing 01, a wafer boat 02, and an air inlet pipe 03. The wafer boat 02 and the air inlet pipe 03 may partially extend into the housing 01, and the wafer may be located on the wafer boat 02. Semiconductor materials may enter the housing 01 through the air inlet pipe 03 and be uniformly deposited on the surface of the wafer, thereby forming some film layers of the semiconductor device.

[0054] The process of forming the semiconductor device film layer by the semiconductor processing equipment 001 is mostly under high temperature conditions. Under high temperature conditions, the air intake pipe 03 is easily expanded by heat, causing the air intake pipe 03 to be easily deformed or even broken. In addition, when assembling the semiconductor processing equipment 001, the assembly accuracy of the air intake pipe 03 is difficult to ensure, causing the air intake pipe 03 to easily contact with other components in the semiconductor processing equipment 001, thereby also easily causing the air intake pipe 03 to be deformed or even broken.

[0055] However, the current semiconductor processing equipment 001 is unable to timely monitor the breakage of the air intake pipe 03, resulting in abnormal quality of process materials including semiconductor materials transported through the air intake pipe 03, thereby causing the film layer size accuracy of the prepared semiconductor device to be low and the film layer thickness uniformity to be poor, thereby reducing the manufacturing yield of the semiconductor devices prepared by the semiconductor processing equipment 001.

[0056] Based on this, some embodiments of the present disclosure provide a pressure sensor and a method for preparing the same, a semiconductor processing device and a monitoring method thereof to overcome the above problems, which are described below respectively.

[0057] Figure 2 The present invention is a structural diagram of a semiconductor processing equipment provided according to some embodiments. Figure 3 The present invention is a structural diagram of a base and a rotating shaft in a semiconductor processing device provided according to some embodiments.

[0058] For example, Figure 2 As shown, the semiconductor processing equipment 100 may be a furnace tube equipment, for example, the furnace tube equipment may include a vertical furnace tube equipment. For example, the semiconductor processing equipment 100 may also be a plasma processing equipment, etc., which is not limited here.

[0059] For ease of understanding, the following embodiments of the present disclosure are all described using the semiconductor processing equipment as a vertical furnace tube equipment as an example, but it should be considered that it is not limited to the vertical furnace tube equipment.

[0060] like Figure 2 and Figure 3 As shown, semiconductor processing equipment 100 may include housing 10, wafer boat 20, air inlet pipe 30, shaft 40 and pressure sensor 50. Wafer boat 20, shaft 40 and pressure sensor 50 may be located inside housing 10, and air inlet pipe 30 is at least partially located inside housing 10.

[0061] The air inlet pipe 30 may be located on the peripheral side of the wafer boat 20. The rotating shaft 40 may be connected to the wafer boat 20. For example, Figure 3 As shown, the rotating shaft 40 can be connected to the wafer boat 20 through the positioning pin 15 (for example, the vacuum positioning pin 15) and the bolt 16 (for example, the vacuum hexagon socket bolt 16). The rotating shaft 40 can drive the wafer boat 20 and the wafer (not shown in the figure) located on the surface of the wafer boat 20 to rotate, so that the semiconductor material (for example, silane SiH4) entering the interior of the housing 10 through the air inlet pipe 30 can be uniformly deposited on the surface of the wafer.

[0062] The pressure sensor 50 may surround the circumference of the rotating shaft 40. The pressure sensor 50 may be located between the air intake pipe 30 and the base 12, so that once the air intake pipe 30 is broken, the residue of the air intake pipe 30 may fall onto the pressure sensor 50. Therefore, the pressure sensor 50 may be used to monitor in real time whether the air intake pipe 30 is broken, so that the broken air intake pipe 30 can be replaced or repaired in time.

[0063] The housing 10 may include a housing wall 11 and a base 12. The housing wall 11 and the base 12 may together form a storage cavity 13. The wafer boat 20, the rotating shaft 40 and the pressure sensor 50 may all be located in the storage cavity 13.

[0064] At least a portion of the air inlet pipe 30 can extend into the storage cavity 13. It can be understood that the air inlet pipe 30 can partially extend into the storage cavity 13; or, the air inlet pipe 30 can extend into the storage cavity 13.

[0065] Exemplarily, the storage chamber 13 may be a closed storage chamber, for example, the storage chamber 13 may be a vacuum storage chamber.

[0066] In some examples, the shell wall 11 and the base 12 may be connected. For example, the shell wall 11 and the base 12 may be connected by snapping, which can ensure that the connection between the shell wall 11 and the base 12 is reliable, thereby improving the strength of the semiconductor processing equipment 100.

[0067] For example, one of a buckle (not shown in the figure) and a groove (not shown in the figure) that can be snap-fitted and connected to each other is provided on one side of the shell wall 11 close to the base 12, and the other of the buckle and the groove that can be snap-fitted and connected to each other is provided on one side of the base 12 close to the shell wall 11. The shell wall 11 and the base 12 can be snap-fitted and connected by the buckle and the groove.

[0068] Exemplarily, a sealing ring 121 is provided at the connection position between the shell wall 11 and the base 12. For example, a sealing groove (not shown in the figure) is provided at the connection position between the base 12 and the shell wall 11, and the sealing ring 121 is located in the sealing groove.

[0069] In this way, the sealing of the storage cavity 13 jointly surrounded by the shell wall 11 and the base 12 can be improved, and the quality accuracy of the process materials including semiconductor materials transported through the air inlet pipe 30 can be guaranteed, thereby ensuring the film layer size accuracy and film layer thickness uniformity of the semiconductor device prepared in the semiconductor processing equipment 100.

[0070] For example, the contour shape of the shell wall 11 may include a cylindrical shape, a prism shape, a semi-ellipsoid shape, or the like.

[0071] For example, along the first direction X, the cross-sectional shape of the base 12 may include a circle, a rectangle, a trapezoid, or an ellipse, etc., which is not limited here. The first direction X may be understood as the radial direction of the housing 10 .

[0072] For example, Figure 3 As shown, the base 12 may include a process door 122 . The process door 122 may separate the storage chamber 13 from the external environment, and the wafer boat may enter the storage chamber 13 through the process door 122 .

[0073] For example, the material of the process gate 122 may include silicon dioxide (also known as quartz) or silicon carbide (SiC).

[0074] The number of the air intake pipe 30 may include one or more. Figure 2As shown, the number of the air inlet pipes 30 may include multiple ones, and the multiple air inlet pipes 30 are uniformly distributed in a stepped manner on the circumference of the wafer boat 20 in sequence along the second direction Y. The semiconductor material can enter the interior of the shell 10 through the multiple air inlet pipes 30 and be uniformly deposited on the surfaces of multiple wafers located on the wafer boat 20. The second direction Y can be understood as the axial direction of the shell 10. The first direction X and the second direction Y can be perpendicular to each other.

[0075] Exemplarily, the material of the intake pipe 30 may include silicon dioxide.

[0076] For example, the radial cross-sectional shape of the intake pipe 30 may include a circle, an ellipse, a rectangle, or the like.

[0077] like Figure 2 As shown, for example, the pressure sensor 50 may be located on the surface of the process door 122 close to the air inlet pipe 30, and the pressure sensor 50 may be connected to the process door 122. For example, the pressure sensor 50 and the process door 122 may be an integral structure connected. For another example, the pressure sensor 50 and the base 12 may be an integral structure connected, so that the pressure sensor 50 can be easily assembled into the semiconductor processing equipment.

[0078] The orthographic projection of the pressure sensor 50 on the base 12 at least partially covers the orthographic projection of the air intake pipe 30 located in the storage cavity 13 on the base 12. It can be understood that the orthographic projection of the pressure sensor 50 on the base 12 can partially cover the orthographic projection of the air intake pipe 30 located in the storage cavity 13 on the base 12; or, the orthographic projection of the pressure sensor 50 on the base 12 can cover the orthographic projection of the air intake pipe 30 located in the storage cavity 13 on the base 12.

[0079] In some examples, the orthographic projection of the pressure sensor 50 on the base 12 may partially cover the orthographic projection of the air intake pipe 30 located in the storage cavity 13 on the base 12. It can be understood that the orthographic projection of the pressure sensor 50 on the base 12 may partially overlap with the orthographic projection of the air intake pipe 30 located in the storage cavity 13 on the base 12.

[0080] In this way, the broken residue of the intake pipe 30 can fall on the surface of the pressure sensor 50 at the overlapped part of the intake pipe 30 and the pressure sensor 50. Therefore, the pressure sensor 50 can monitor in real time whether the intake pipe 30 is broken, so as to replace or repair the broken intake pipe 30 in time, ensure the quality of the semiconductor material transported through the intake pipe 30, improve the film size accuracy and film thickness uniformity of the prepared semiconductor device, and thus improve the manufacturing yield of the semiconductor device prepared by the semiconductor processing equipment 100.

[0081] In some examples, the orthographic projection of the pressure sensor 50 on the base 12 may cover the orthographic projection of the air intake pipe 30 located in the storage cavity 13 on the base 12. It can be understood that the orthographic projection of the pressure sensor 50 on the base 12 may overlap with the orthographic projection of the air intake pipe 30 located in the storage cavity 13 on the base 12; or, the orthographic projection area of ​​the pressure sensor 50 on the base 12 may surround the orthographic projection area of ​​the air intake pipe 30 located in the storage cavity 13 on the base 12, and be slightly larger than the orthographic projection area of ​​the air intake pipe 30 located in the storage cavity 13 on the base 12.

[0082] In this way, the residues of the broken intake pipe 30 can all fall on the surface of the pressure sensor 50. Therefore, the pressure sensor 50 can monitor in real time whether the intake pipe 30 is broken, so as to replace or repair the broken intake pipe 30 in time, ensure the quality of the semiconductor material transported through the intake pipe 30, and greatly improve the film size accuracy and film thickness uniformity of the prepared semiconductor device, thereby greatly improving the production yield of the semiconductor device prepared by the semiconductor processing equipment 100.

[0083] Figure 4 Schematic diagram of a pressure sensor and a rotating shaft provided according to some embodiments. Figure 5 for Figure 4 Magnified view of region F. Figure 6 Schematic diagram of a pressure sensor and a rotating shaft provided according to some embodiments.

[0084] Combination Figure 4 , Figure 5 and Figure 6 As shown, some embodiments of the present disclosure provide a pressure sensor 50. The pressure sensor 50 can be used to sense the pressure received and continuously output an analog signal (such as an electrical signal or a resonant signal, etc.). When the pressure sensor 50 senses that the pressure received changes, the analog signal output by the pressure sensor 50 will also change accordingly, so that the pressure value received by the pressure sensor 50 can be determined based on the change in the analog signal. The pressure sensor 50 can be applied to the above-mentioned semiconductor processing equipment 100.

[0085] like Figure 4 , Figure 5 and Figure 6As shown, the pressure sensor 50 may include a capacitor 51, a first insulating layer 52 and a first inductor 53. The first insulating layer 52 may be located between the first inductor 53 and the capacitor 51, so that the first inductor 53 and the capacitor 51 are insulated and spaced apart. The capacitor 51 may include a pressure sensing surface 510, and the first inductor 53 and the capacitor 51 may be connected in series, so that the first inductor 53 and the capacitor 51 may form a pressure sensing circuit together. The pressure sensing surface 510 of the capacitor 51 may sense the pressure, and the change in pressure may cause the capacitance value of the capacitor 51 to change, and the change in capacitance value may cause the resonant signal generated in the pressure sensing circuit to also change. The parameters of the resonant signal in the pressure sensing circuit may be used to characterize the pressure value on the pressure sensing surface 510 of the capacitor 51. By acquiring the resonant signal in the pressure sensing circuit, the pressure value may be detected.

[0086] like Figure 4 , Figure 5 and Figure 6 As shown, the capacitor 51 may include a first plate 511 and a second plate 512. The first plate 511 and the second plate 512 of the capacitor 51 may be used to store charge. The second plate 512 may be located on a side of the first plate 511 close to the first insulating layer 52. In a direction perpendicular to the first plate 511, the first plate 511 and the second plate 512 are arranged opposite to each other and spaced apart.

[0087] The first electrode 511 may include a pressure sensing surface 510. The pressure sensing surface 510 may include a surface of the first electrode 511 away from the second electrode 512. The first electrode 511 may sense external pressure and generate a corresponding deformation, so that the distance between the first electrode 511 and the second electrode 512 changes.

[0088] A pressure resonance cavity 513 may be formed between the first electrode plate 511 and the second electrode plate 512. Exemplarily, the pressure resonance cavity 513 may be a sealed pressure resonance cavity 513. For example, the pressure resonance cavity 513 may be a vacuum pressure resonance cavity. In this way, the sensitivity of the pressure sensing surface 510 in the first electrode plate 511 to the external pressure may be improved, thereby improving the sensitivity of the pressure sensor 50.

[0089] The material of the second electrode plate 512 can be the same as the material of the first electrode plate 511 to ensure the stability of the performance of the capacitor 51 formed by the first electrode plate 511 and the second electrode plate 512. Exemplarily, the material of the first electrode plate 511 and the material of the second electrode plate 512 may include metal silicide. For example, the metal material doped in the metal silicide may include a material with good conductivity such as aluminum, titanium, platinum, tungsten or zirconium, so that the conductivity of the first electrode plate 511 and the conductivity of the second electrode plate 512 are better.

[0090] Among them, in the direction perpendicular to the first electrode plate 511, the spacing distance D between the first electrode plate 511 and the second electrode plate 512 is negatively correlated with the amount of charge (i.e., the capacitance value) that can be stored in the capacitor 51. It can be understood that in the direction perpendicular to the first electrode plate 511, the smaller the spacing distance D between the first electrode plate 511 and the second electrode plate 512, the larger the capacitance value; conversely, in the direction perpendicular to the first electrode plate 511, the larger the spacing distance D between the first electrode plate 511 and the second electrode plate 512, the smaller the capacitance value.

[0091] In some examples, such as Figure 5 As shown, in the direction perpendicular to the first electrode plate 511, the spacing distance D between the first electrode plate 511 and the second electrode plate 512 may be greater than or equal to 0.5 cm and less than or equal to 3 cm (e.g., 0.5 cm, 0.8 cm, 1 cm, 1.2 cm, 1.5 cm, 1.8 cm, 2 cm, 2.3 cm, 2.5 cm, 2.8 cm, or 3 cm). It can be understood that in the direction perpendicular to the first electrode plate 511, the size of the pressure resonance cavity 513 (i.e., the thickness of the pressure resonance cavity 513) may be greater than or equal to 0.5 cm and less than or equal to 3 cm (e.g., 0.5 cm, 0.8 cm, 1 cm, 1.2 cm, 1.5 cm, 1.8 cm, 2 cm, 2.3 cm, 2.5 cm, 2.8 cm, or 3 cm).

[0092] By reasonably limiting the spacing distance D between the first electrode 511 and the second electrode 512, the capacitance value range of the capacitor 51 can be made larger. A larger capacitance value range can make the range of the resonant signal generated in the pressure sensing circuit larger, thereby making the pressure sensor 50 more sensitive and having a wider range of applications.

[0093] The first insulating layer 52 is at least partially located on a side of the second electrode 512 away from the first electrode 511. It can be understood that the first insulating layer 52 can be partially located on a side of the second electrode 512 away from the first electrode 511; or, the first insulating layer 52 can be located on a side of the second electrode 512 away from the first electrode 511.

[0094] In this way, the first insulating layer 52 can insulate and space the capacitor 51 and the first inductor 53, which can at least reduce the parasitic capacitance between the second plate 512 in the capacitor 51 and the first inductor 53, and improve the stability of the pressure sensing circuit formed in series with the capacitor 51 and the first inductor 53, thereby improving the stability and accuracy of the pressure sensor 50.

[0095] In some examples, such as Figure 4 As shown, the first insulating layer 52 may be partially located on a side of the second electrode plate 512 away from the first electrode plate 511 .

[0096] Exemplarily, the first insulating layer 52 may include an insulating portion 521 and a sidewall portion 522 connected to each other. For example, the insulating portion 521 and the sidewall portion 522 may be connected as an integral structure, which may improve the strength and rigidity of the first insulating layer 52.

[0097] The insulating portion 521 may be located on a side of the second electrode plate 512 away from the first electrode plate 511. The side wall portion 522 may at least surround the circumference of the insulating portion 521. The side wall portion 522 may extend from the insulating portion 521 toward the first electrode plate 511. The portion of the side wall portion 522 extending from the insulating portion 521 toward the first electrode plate 511 may be located on a side of the second electrode plate 512 close to the first electrode plate 511.

[0098] For example, the side wall portion 522 may also surround the circumference of the first electrode plate 511 and the circumference of the second electrode plate 512. The portion of the side wall portion 522 extending from the insulating portion 521 toward the first electrode plate 511 may, together with the first electrode plate 511 and the second electrode plate 512, enclose the pressure resonance cavity 513.

[0099] In this way, the side wall portion 522 in the first insulating layer 52 can also separate the first electrode plate 511 from other components around the first electrode plate 511, and the side wall portion 522 in the first insulating layer 52 can also separate the second electrode plate 512 from other components around the second electrode plate 512.

[0100] In some examples, the first insulating layer 52 may be a whole layer structure with uniform size along a direction perpendicular to the first electrode plate 511. The first insulating layer 52 may be located on a side of the second electrode plate 512 away from the first electrode plate 511.

[0101] Illustratively, the first insulating layer 52 may cover a surface of the second electrode plate 512 away from the first electrode plate 511 .

[0102] In this way, the first insulating layer 52 can set the capacitor 51 and the first inductor 53 apart, which can reduce the parasitic capacitance between the capacitor 51 and the first inductor 53, and improve the stability of the pressure sensing circuit formed by the capacitor 51 and the first inductor 53 in series, thereby improving the stability and accuracy of the pressure sensor 50.

[0103] Exemplarily, in the direction perpendicular to the first electrode 511 (i.e., the second direction Y), the size of the first insulating layer 52 can be greater than or equal to 200nm and less than or equal to 800nm ​​(e.g., 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, 550nm, 600nm, 650nm, 700nm, 750nm, or 800nm).

[0104] The larger the size of the first insulating layer 52 along the second direction Y, the smaller the parasitic capacitance between the capacitor 51 and the first inductor 53, and the higher the stability of the pressure sensing loop formed in series by the capacitor 51 and the first inductor 53, thereby increasing the stability and accuracy of the pressure sensor 50.

[0105] For example, the material of the first insulating layer 52 may include phospho silicate glass (PSG), ceramics, polytetrafluoroethylene, or other materials with good insulation properties.

[0106] In some examples, the material of the first insulating layer 52 may also include silicon carbide. Silicon carbide has stable chemical properties, high thermal conductivity, small thermal expansion coefficient and good wear resistance, so that the pressure sensor 50 can be applied to high temperature working conditions.

[0107] like Figure 4 , Figure 5 and Figure 6 As shown, the first inductor 53 may be located on a side of the first insulating layer 52 away from the second electrode plate 512. The first end of the first inductor 53 may be coupled to the first electrode plate 511, and the second end of the first inductor 53 may be coupled to the second electrode plate 512. It can be understood that the first inductor 53 may be connected in series with the capacitor 51, so that the capacitor 51 and the first inductor 53 may form an RLC pressure sensing loop.

[0108] The calculation formula of the impedance Z in the RLC pressure sensing loop is: Z = R + j (X L +X C ). Wherein, R is the equivalent resistance of the RLC pressure sensing circuit, that is, the sum of the resistance of the first inductor 53, the resistance of the first electrode 511, the resistance of the second electrode 512, and the resistance of the connecting wire between the capacitor 51 and the first inductor 53; j is the symbol representing the imaginary part; X L is the reactance of the first inductor 53, X L =ωL, ω is the resonant angular frequency of the first inductor 53, L is the inductance of the first inductor 53; X C is the capacitive reactance of capacitor 51, X C =1 / (ωC), C is the capacitance value of the capacitor 51. The capacitance value C is calculated as: C=εS / (4πkd), where ε is the dielectric constant of the medium between the first electrode plate 511 and the second electrode plate 512, S is the relative area of ​​the first electrode plate 511 and the second electrode plate 512, and d is the spacing distance between the first electrode plate 511 and the second electrode plate 512.

[0109] When X L =X CWhen , the RLC pressure sensing circuit undergoes harmonic resonance. At this time, the calculation formula for the resonant frequency f of the pressure sensing circuit is:

[0110] In some examples, such as Figure 4 As shown, the pressure sensor 50 may further include a first lead 514. The first lead 514 may pass through the first insulating layer 52, and the two ends of the first lead 514 may be respectively coupled to the first end of the first inductor 53 and the first electrode plate 511. It can be understood that the first lead 514 may be equivalent to a connecting wire between the first end of the first inductor 53 and the first electrode plate 511.

[0111] A through hole 517 may also be provided in the pressure sensor 50. The through hole 517 may penetrate the first insulating layer 52, and the two ends of the through hole 517 may be connected to the second end of the first inductor 53 and the second electrode plate 512, respectively. The inside of the through hole 517 may be filled with a conductive medium 515, and the second end of the first inductor 53 and the second electrode plate 512 may be coupled through the conductive medium 515 in the through hole 517. It can be understood that the conductive medium 515 may be equivalent to the connecting wire between the second end of the first inductor 53 and the second electrode plate 512.

[0112] In this way, the first lead 514 and the through hole 517 have simple structures, which facilitates connecting the two ends of the first inductor 53 in series with the two plates of the capacitor 51. In addition, the first lead 514 is short and the through hole 517 has a large diameter, so that the resistance of the first lead 514 and the conductive medium 515 in the through hole 517 is small, and the first lead 514 and the conductive medium 515 in the through hole 517 have a small loss of electric energy in the pressure sensing circuit, which can improve the working efficiency of the pressure sensor 50.

[0113] Exemplarily, the material of the first lead 514 and the material of the conductive medium 515 may include at least one of gold, silver, copper or tin. For example, the material of the first lead 514 and the material of the conductive medium 515 may both include silver. The material of the first lead 514 and the material of the conductive medium 515 may be the same or different.

[0114] In some examples, such as Figure 6 As shown, the pressure sensor 50 may further include a second lead 516. The second lead 516 may pass through the first insulating layer 52, and the two ends of the second lead 516 may be coupled to the second end of the first inductor 53 and the second electrode plate 512, respectively. That is, the second end of the first inductor 53 and the second electrode plate 512 may be coupled. It can be understood that the second lead 516 may be equivalent to a connecting wire between the second end of the first inductor 53 and the second electrode plate 512.

[0115] In this way, the second lead 516 has a simple structure, which facilitates the series connection of the second end of the first inductor 53 and the second electrode plate 512. In addition, the second lead 516 is short, so that the resistance of the second lead 516 is small, and the second lead 516 causes less loss of electric energy in the pressure sensing circuit, which can improve the working efficiency of the pressure sensor 50.

[0116] Figure 7 A top view of a first inductor coil or a second inductor coil provided according to some embodiments. Figure 8 A top view of a first inductor coil or a second inductor coil provided according to some embodiments.

[0117] like Figure 4 , Figure 5 and Figure 6 As shown, the first inductor 53 may include at least one first conductive wire 531 . It can be understood that the first inductor 53 may include one first conductive wire 531 ; or, the first inductor 53 may include a plurality of first conductive wires 531 .

[0118] For example, Figure 6 , Figure 7 and Figure 8 As shown, at least one first conductive wire 531 may be in a circular spiral shape or a square spiral shape, and is wound at least one circle (eg, one circle or more circles) on a side of the first insulating layer 52 away from the second electrode plate 512 to form a first inductor 53 .

[0119] By way of example, the cross-sectional shape of the first conductive line 531 may include a circle, an ellipse, a rectangle, a trapezoid or the like.

[0120] It should be noted that the cross section of the first conductive wire 531 can be understood as a cross section of the first conductive wire 531 perpendicular to the extending direction of the first conductive wire 531 , that is, a radial cross section of the first conductive wire 531 .

[0121] In some examples, such as Figure 5 As shown, a radial dimension d1 of a cross section of the first conductive line 531 is greater than or equal to 1 mm and less than or equal to 5 mm (eg, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, or 5 mm).

[0122] Exemplarily, when the cross-sectional shape of the first wire 531 is circular, the diameter of the cross-sectional shape of the first wire 531 can be greater than or equal to 1 mm and less than or equal to 5 mm (for example, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm or 5 mm).

[0123] Exemplarily, when the cross-sectional shape of the first wire 531 is a rectangle, the width of the first wire 531 (i.e., the dimension of the first wire 531 along a direction parallel to the first electrode 511) and / or the height of the first wire 531 (i.e., the dimension of the first wire 531 along a direction perpendicular to the first electrode 511) can be greater than or equal to 1 mm and less than or equal to 5 mm (e.g., 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm or 5 mm).

[0124] In this way, the radial dimension d1 of the cross section of the first wire 531 can be limited to a larger range, the cross-sectional area of ​​the first wire 531 in the first inductor coil 53 can be increased, the resistance of the first wire 531 can be reduced, and the quality factor of the first inductor coil 53 can be increased, thereby reducing the impedance in the pressure sensing loop formed by the capacitor 51 and the first inductor coil 53, and further increasing the change in the resonant signal in the pressure sensing loop after pressure, thereby improving the sensitivity of the sensor.

[0125] In some examples, such as Figure 5 , Figure 7 and Figure 8 As shown, the first wire 531 can be wound in a spiral shape for multiple turns. In the direction parallel to the first electrode plate 511 (i.e., the first direction X), the spacing L1 between two adjacent turns of the first wire 531 can be greater than or equal to 5 mm and less than or equal to 20 mm (e.g., 5 mm, 8 mm, 10 mm, 13 mm, 15 mm, 16 mm, 18 mm or 20 mm).

[0126] In this way, the spacing L1 between two adjacent turns of the wire in the first wire 531 can be limited to a larger range, the loss between the two adjacent turns of the wire can be reduced, the quality factor of the first inductor coil 53 can be improved, and the inductance in the first inductor coil 53 can be reduced, thereby increasing the change in the resonant signal in the pressure sensing circuit after being pressurized, and further improving the sensitivity of the pressure sensor 50.

[0127] In some embodiments, Figure 5 As shown, in the direction perpendicular to the first electrode plate 511, the distance L3 between the second electrode plate 512 and the first inductor coil 53 can be greater than or equal to 1 cm and less than or equal to 3 cm (for example, 1 cm, 1.2 cm, 1.5 cm, 1.8 cm, 2 cm, 2.3 cm, 2.5 cm, 2.6 cm, 2.8 cm or 3 cm).

[0128] By limiting the distance L3 between the second electrode plate 512 and the first inductor coil 53 within a reasonable range, the parasitic capacitance between the second electrode plate 512 and the first inductor coil 53 can be greatly reduced, that is, the parasitic capacitance between the capacitor 51 and the first inductor coil 53 can be greatly reduced, so that the pressure sensing circuit formed by the capacitor 51 and the first inductor coil 53 in series has higher stability, thereby greatly improving the stability and accuracy of the pressure sensor 50.

[0129] In some embodiments, Figure 4 and Figure 6 As shown, the pressure sensor 50 may further include a fourth insulating layer 59. The fourth insulating layer 59 may be located between the second electrode plate 512 and the first inductor 53. A through hole 517 may be provided in the fourth insulating layer 59 and the first insulating layer 52. It can be understood that the through hole 517 may penetrate the fourth insulating layer 59 and the first insulating layer 52.

[0130] The second end of the first inductor coil may be connected to the second electrode plate through the through hole 517. For example, the second end of the first inductor coil 53 may pass through the through hole 517 in the fourth insulating layer 59 and the first insulating layer 52 to be connected to the second electrode plate 512. For another example, the conductive medium 515 in the through hole 517 may pass through the fourth insulating layer 59 and the first insulating layer 52 to be connected to the second end of the first inductor coil 53 and the second electrode plate 512, respectively.

[0131] For example, the fourth insulating layer 59 may be located between the second electrode plate 512 and the first insulating layer 52. For example, the fourth insulating layer 59 may be located on a surface of the first insulating layer 52 close to the second electrode plate 512.

[0132] Exemplarily, the fourth insulating layer 59 may be located between the first insulating layer 52 and the first inductor 53. For example, the fourth insulating layer 59 may be located on a surface of the first insulating layer 52 close to the first inductor 53.

[0133] In this way, the fourth insulating layer 59 can insulate the second electrode plate 512. The fourth insulating layer 59 can increase the spacing distance between the second electrode plate 512 and the first inductor coil 53, and can reduce the parasitic capacitance between the second electrode plate 512 and the first inductor coil 53, that is, reduce the parasitic capacitance between the capacitor 51 and the first inductor coil 53, so that the pressure sensing circuit formed by the capacitor 51 and the first inductor coil 53 in series has higher stability, thereby improving the stability and accuracy of the pressure sensor 50.

[0134] Exemplarily, the material of the fourth insulating layer 59 may be the same as the material of the first insulating layer 52 , which will not be described in detail herein.

[0135] In some embodiments, Figure 4 , Figure 5 and Figure 6 As shown, the pressure sensor 50 may further include a pressure sensing film 56. The pressure sensing film 56 may include a main body portion 561 and a frame portion 562 connected to each other. Exemplarily, the main body portion 561 and the frame portion 562 may be connected as an integral structure, that is, the pressure sensing film 56 may be an integral structure, which may ensure the strength and rigidity of the pressure sensing film 56.

[0136] The main body 561 may be a whole-layer structure. The main body 561 may be located on a side of the first electrode plate 511 away from the second electrode plate 512. The surface of the main body 561 away from the first electrode plate 511 may serve as a pressure bearing surface for bearing and sensing external pressure.

[0137] In some examples, the material of the pressure sensing film 56 may include silicon carbide. Silicon carbide has stable chemical properties, high thermal conductivity, small thermal expansion coefficient and good wear resistance, so that the pressure sensing film 56 has good high temperature resistance and wear resistance, thereby improving the high temperature resistance of the pressure sensor 50. In addition, the pressure sensing film 56 made of silicon carbide has good stability and high sensitivity, so that the pressure sensor 50 can achieve micro-nano force measurement.

[0138] The frame portion 562 may at least surround the circumference of the main body portion 561. It can be understood that in a direction perpendicular to the first electrode plate 511, the size of the frame portion 562 may be greater than or equal to the size of the main body portion 561.

[0139] In some examples, the pressure sensing film 56 may be a whole-layer structure with uniform size along a direction perpendicular to the first electrode plate 511 .

[0140] The surface of the pressure sensing film 56 away from the first electrode plate 511 can withstand and sense external pressure. The external pressure sensed by the pressure sensing film 56 can be transmitted to the first electrode plate 511, so that the spacing distance D between the first electrode plate 511 and the second electrode plate 512 changes, thereby causing the change of the parameter of the resonant signal in the pressure sensing loop. The change in the parameter of the resonant signal in the pressure sensing loop can be used to characterize the change in the pressure value to which the pressure sensing film 56 is subjected.

[0141] In some examples, the portion of the frame portion 562 extending from the main body portion 561 in a direction away from the first insulating layer 52 may enclose a receiving groove 563 together with the main body portion 561. The receiving groove 563 may be used to receive an object that applies pressure to the pressure sensing film 56. For example, in the semiconductor processing equipment 100, the receiving groove 563 may be used to receive the broken residue of the intake pipe 30, which may reduce the probability of displacement of the residue that applies pressure to the pressure sensing film 56, and may improve the measurement accuracy of the pressure sensor 50.

[0142] like Figure 4and Figure 6 As shown, the pressure sensing film 56 and the first insulating layer 52 can jointly enclose the first accommodating cavity 526. The first electrode plate 511 and the second electrode plate 512 can both be located in the first accommodating cavity 526. It can be understood that the pressure resonance cavity 513 can be located in the first accommodating cavity 526. For example, the portion of the frame portion 562 of the pressure sensing film 56 extending from the main body portion 561 in the direction close to the first insulating layer 52 can jointly enclose the pressure resonance cavity 513 with the first electrode plate 511 and the second electrode plate 512. For another example, Figure 6 As shown, the side wall portion 522 of the first insulating layer 52 extending from the insulating portion 521 toward the direction close to the pressure sensing film 56 can form a pressure resonance cavity 513 together with the first electrode plate 511 and the second electrode plate 512. Figure 4 As shown, the portion of the frame portion 562 extending from the main body portion 561 toward the direction close to the first insulating layer 52, and the portion of the side wall portion 522 extending from the insulating portion 521 toward the direction close to the pressure sensing membrane 56, can together with the first electrode plate 511 and the second electrode plate 512 form a pressure resonance cavity 513.

[0143] The pressure sensing film 56 can sense external pressure and transmit the pressure to the first electrode plate 511 , so that the thickness of the pressure resonance cavity 513 can change, which can further cause the parameters of the resonance signal in the pressure sensing loop to change.

[0144] In some embodiments, the pressure sensor 50 may further include a third insulating layer 58. The third insulating layer 58 may be located on a side of the first electrode 511 away from the second electrode 512. The orthographic projection of the third insulating layer 58 on the first insulating layer 52 may cover the orthographic projection of the first electrode 511 on the first insulating layer 52. Exemplarily, the third insulating layer 58 may be located between the first electrode 511 and the pressure sensing film 56. For example, the third insulating layer 58 may be located on the surface of the first electrode 511 close to the pressure sensing film 56.

[0145] In this way, the third insulating layer 58 can insulate the first electrode plate 511. In addition, the third insulating layer 58 can isolate the external high temperature to prevent the first electrode plate 511 from being burned by the high temperature.

[0146] Exemplarily, the material of the third insulating layer 58 may be the same as the material of the first insulating layer 52 , which will not be described in detail herein.

[0147] Fig. 9 FIG. 4 is an equivalent circuit diagram of a pressure sensor according to some embodiments.

[0148] In some embodiments, Figure 4 , Figure 5 and Figure 6As shown, the pressure sensor 50 may further include a second inductor 54. The second inductor 54 may be located on a side of the first inductor 53 away from the first insulating layer 52. The second inductor 54 and the first inductor 53 are disposed opposite to each other and spaced apart.

[0149] like Fig. 9 As shown, C in the figure is the capacitance value of the capacitor 51; R is the equivalent resistance of the pressure sensing circuit; I is the current in the pressure sensing circuit; L is the first inductor 53; La is the second inductor 54; Ia is the current of the second inductor 54; Ra includes the resistance of the second inductor 54.

[0150] The second inductor 54 can be used to perform frequency sweep measurement on the pressure sensing circuit. An alternating magnetic field can be generated in the second inductor 54, and the alternating magnetic field can be coupled to the pressure sensing circuit through the first inductor 53. The coupling between the second inductor 54 and the first inductor 53 will cause the voltage in the second inductor 54 to drop significantly. When the voltage in the second inductor 54 drops significantly, the resonant frequency point of the pressure sensing circuit can be reached (that is, the impedance of the pressure sensing circuit is equal to the resistance of the first inductor 53, and at this time the reactance of the first inductor 53 is equal to the capacitive reactance of the capacitor 51). By detecting the change in the electrical signal (such as voltage) in the second inductor 54, the resonant signal of the pressure sensing circuit can be obtained.

[0151] like Figure 4 , Figure 5 and Figure 6 As shown, the second inductor 54 may include at least one second conductive wire 541 . It can be understood that the second inductor 54 may include one second conductive wire 541 ; or the second inductor 54 may include a plurality of second conductive wires 541 .

[0152] For example, Figure 6 , Figure 7 and Figure 8 As shown, at least one second conductive wire 541 may be wound in a circular spiral or a square spiral for at least one turn (eg, one turn or multiple turns) to form a second inductor 54 .

[0153] By way of example, the cross-sectional shape of the second conductive line 541 may include a circle, an ellipse, a rectangle, a trapezoid or the like.

[0154] It should be noted that the cross section of the second wire 541 can be understood as a cross section of the second wire 541 along a direction perpendicular to the extension direction of the second wire 541 , that is, a radial cross section of the second wire 541 .

[0155] In some examples, such as Figure 5As shown, a radial dimension d2 of a cross section of the second conductive wire 541 is greater than or equal to 1 mm and less than or equal to 5 mm (eg, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm, or 5 mm).

[0156] Exemplarily, when the cross-sectional shape of the second wire 541 is circular, the diameter of the cross-sectional shape of the second wire 541 can be greater than or equal to 1 mm and less than or equal to 5 mm (for example, 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm or 5 mm).

[0157] Exemplarily, when the cross-sectional shape of the second wire 541 is rectangular, the width of the second wire 541 (i.e., the dimension of the second wire 541 along a direction parallel to the first electrode plate 511) and / or the height of the second wire 541 (i.e., the dimension of the second wire 541 along a direction perpendicular to the first electrode plate 511) can be greater than or equal to 1 mm and less than or equal to 5 mm (e.g., 1 mm, 1.5 mm, 2 mm, 2.5 mm, 3 mm, 3.5 mm, 4 mm, 4.5 mm or 5 mm).

[0158] In this way, the radial dimension d2 of the cross section of the second wire 541 can be limited to a larger range, the cross-sectional area of ​​the second wire 541 in the second inductor 54 can be increased, the resistance of the second wire 541 can be reduced, the quality factor of the second inductor 54 can be increased, the detection accuracy of the second inductor 54 can be improved, and thus the accuracy of the pressure sensor 50 can be improved.

[0159] In some examples, such as Figure 5 , Figure 7 and Figure 8 As shown, the second wire 541 can be wound in a spiral shape for multiple turns. In the direction parallel to the first electrode plate 511 (i.e., the first direction X), the spacing L2 between two adjacent turns of the second wire 541 can be greater than or equal to 5 mm and less than or equal to 20 mm (e.g., 5 mm, 8 mm, 10 mm, 13 mm, 15 mm, 16 mm, 18 mm or 20 mm).

[0160] In this way, the spacing L2 between two adjacent turns of the second wire 541 can be limited to a larger range, the loss between the two adjacent turns of the wire can be reduced, the quality factor of the second inductor 54 can be improved, the detection accuracy of the second inductor 54 can be improved, and thus the accuracy of the pressure sensor 50 can be improved.

[0161] In some embodiments, Figure 4As shown, in the direction perpendicular to the first electrode plate 511, the spacing distance L4 between the first inductor 53 and the second inductor 54 can be greater than or equal to 0.5 cm and less than or equal to 2 cm (for example, 0.5 cm, 0.6 cm, 0.8 cm, 1 cm, 1.2 cm, 1.5 cm, 1.8 cm or 2 cm).

[0162] By limiting the spacing distance L4 between the first inductor 53 and the second inductor 54 to a reasonable range, the coupling accuracy between the second inductor 54 and the first inductor 53 can be improved, thereby improving the accuracy of the pressure sensor 50.

[0163] In some embodiments, Figure 4 , Figure 5 and Figure 6 As shown, the pressure sensor 50 may also include a base 55 .

[0164] The base 55 may include a connected substrate 551 and a wall 552. Exemplarily, the substrate 551 and the wall 552 may be connected as an integral structure, that is, the base 55 may be an integral structure, which may ensure the strength and rigidity of the base 55.

[0165] The substrate 551 may be located on a side of the second inductor coil 54 away from the first inductor coil 53. By way of example, the substrate 551 may be a whole-layer structure.

[0166] The wall 552 at least surrounds the circumference of the substrate 551. For example, the wall 552 may surround the circumference of the substrate 551. For another example, the wall 552 may extend from the substrate 551 toward the first insulating layer 52, and the wall 552 may surround the circumference of the second inductor 54 and the circumference of the substrate 551.

[0167] In this way, the base 55 can support and protect the second inductor 54 , and the base 55 can also isolate the second inductor 54 from the external high temperature environment, so the base 55 can also provide heat insulation for the second inductor 54 .

[0168] The base 55 and the first insulating layer 52 may together form a second accommodating cavity 534. The first inductor coil 53 and the second inductor coil 54 may both be located in the second accommodating cavity 534.

[0169] In this way, the first inductance coil 53 and the second inductance coil 54 can be spaced apart from other components in the pressure sensor 50, which can reduce the influence of other components in the pressure sensor 50 on the first inductance coil 53 and the second inductance coil 54, thereby reducing the interference of other components in the pressure sensor 50 on the resonant signal in the pressure sensing circuit, and can improve the accuracy of the second inductance coil 54 in detecting the resonant signal, thereby improving the accuracy of the pressure sensor 50.

[0170] In some examples, the material of the base 55 may include silicon carbide. Silicon carbide has stable chemical properties, high thermal conductivity, low thermal expansion coefficient and good wear resistance, so that the base 55 has good high temperature resistance and good wear resistance, thereby improving the high temperature resistance and wear resistance of the pressure sensor 50.

[0171] In some examples, the base 55 may be connected to the base 12 in the semiconductor processing equipment 100. For example, the base 55 may be an integral structure connected to the process door 122 of the base 12 in the semiconductor processing equipment 100.

[0172] For example, the material of the base 55 and the material of the process door 122 can both be silicon carbide. In this way, the connection between the base 55 and the base 12 can be reliable.

[0173] In some embodiments, the pressure sensor 50 may further include a second insulating layer 57. The second insulating layer 57 may be located between the second inductor coil 54 and the base 55. The orthographic projection of the second insulating layer 57 on the base 55 may cover the orthographic projection of the second inductor coil 54 on the base 55. For example, the second insulating layer 57 may be located on a surface of the base 55 close to the second inductor coil 54.

[0174] The second insulating layer 57 can separate the second inductor 54 from the base 55, and the second insulating layer 57 can insulate the second inductor 54. In addition, the second insulating layer 57 can isolate the external high temperature to prevent the second inductor 54 from being burned by the high temperature.

[0175] Exemplarily, the material of the second insulating layer 57 may be the same as the material of the first insulating layer 52 , which will not be described in detail herein.

[0176] In summary, in the pressure sensor 50 provided by some embodiments of the present disclosure, the first inductor coil 53 and the capacitor 51 can jointly form a pressure sensing circuit. The pressure sensing surface 510 of the capacitor 51 can sense the pressure, and the change in pressure can cause the capacitance value of the capacitor 51 to change, and the change in capacitance value can also cause the resonant signal generated in the pressure sensing circuit to change. By acquiring the resonant signal in the pressure sensing circuit, the pressure value of the pressure sensing surface 510 can be detected. In addition, the first insulating layer 52 can be located between the first inductor coil 53 and the capacitor 51, so that the first inductor coil 53 and the capacitor 51 can be spaced apart, the parasitic capacitance between the second electrode 512 in the capacitor 51 and the first inductor coil 53 can be reduced, and the stability of the pressure sensing circuit formed by the capacitor 51 and the first inductor coil 53 in series can be improved, thereby improving the stability and accuracy of the pressure sensor 50.

[0177] In the semiconductor processing equipment provided by some embodiments of the present disclosure, the residue of the broken intake pipe 30 can fall onto the pressure sensor 50. The pressure sensor 50 can be used to monitor in real time whether the intake pipe 30 is broken, so as to timely replace or repair the broken intake pipe 30, thereby ensuring the quality accuracy of the semiconductor material transported through the intake pipe 30, improving the film layer size accuracy and film layer thickness uniformity of the prepared semiconductor device, and thus improving the manufacturing yield of the semiconductor device prepared by the semiconductor processing equipment 100.

[0178] Fig.10 , Fig.11A and Fig. 12A They are respectively flow charts of methods for preparing pressure sensors according to some embodiments. Fig. 11B and Fig. 12B They are respectively structural diagrams of pressure sensors provided according to some embodiments.

[0179] The present disclosure also provides a method for preparing a pressure sensor, which can prepare the pressure sensor 50 of any of the above embodiments. Fig.10 As shown, the method for preparing the pressure sensor may include steps S110 to S140.

[0180] Step S110: forming a first insulating layer 52. The structural features of the first insulating layer 52 have been described in detail above and will not be repeated here.

[0181] In some examples, step S110 may include: forming the first insulating layer 52 by a deposition process (eg, a chemical vapor deposition process). The first insulating layer 52 may be a whole layer structure with uniform size.

[0182] In some examples, step S110 may include: forming a first insulating material layer by a deposition process. Afterwards, a portion of the first insulating material layer in the middle region may be removed by an etching process, another portion of the first insulating material layer in the middle region may be retained to form an insulating portion 521, and the first insulating material layer in the edge region may be retained to form a sidewall portion 522. The insulating portion 521 and the sidewall portion 522 form a first insulating layer 52.

[0183] like Figure 4 , Figure 5 and Figure 6 As shown, the side wall portion 522 may at least surround the circumference of the insulating portion 521. The insulating portion 521 and the side wall portion 522 may be connected as an integral structure, which may improve the strength and rigidity of the first insulating layer 52.

[0184] For example, the material of the first insulating layer 52 may include phospho silicate glass (PSG), ceramics, polytetrafluoroethylene, or other materials with good insulation properties.

[0185] Exemplarily, the material of the first insulating layer 52 may also include silicon carbide. Silicon carbide has stable chemical properties, high thermal conductivity, small thermal expansion coefficient and good wear resistance, so that the pressure sensor 50 can be applied to high temperature working conditions.

[0186] Step S120 : forming a second electrode plate 512 on one side of the first insulating layer 52 .

[0187] In some examples, step S120 may include: on one side of the first insulating layer 52, a second electrode 512 may be formed by a screen printing process. Exemplarily, the material of the second electrode 512 may include metal silicide. For example, the metal material doped in the metal silicide may include a material with good conductivity such as aluminum, titanium, platinum, tungsten or zirconium. For example, a metal silicide with good conductivity may be formed by high-temperature metal doping of the silicon layer. Afterwards, the metal silicide is formed into the second electrode 512 by a screen printing process, so that the conductivity of the second electrode 512 is better.

[0188] In this way, the first insulating layer 52 can space the capacitor 51 and the subsequently formed first inductor coil 53, which can at least reduce the parasitic capacitance between the second electrode 512 in the capacitor 51 and the first inductor coil 53, and improve the stability of the pressure sensing circuit formed in series with the capacitor 51 and the first inductor coil 53, thereby improving the stability and accuracy of the pressure sensor 50.

[0189] Step S130 : forming a first electrode plate 511 . The first electrode plate 511 may include a pressure sensing surface 510 .

[0190] In some examples, step S130 may include: forming the first electrode plate 511 by a screen printing process.

[0191] Exemplarily, the material of the second electrode plate 512 can be the same as that of the first electrode plate 511 to ensure that the performance of the capacitor 51 formed by the first electrode plate 511 and the second electrode plate 512 is stable, and the conductivity of the first electrode plate 511 and the conductivity of the second electrode plate 512 are better.

[0192] In a direction perpendicular to the first electrode plate 511, the first electrode plate 511 and the second electrode plate 512 are arranged opposite to each other and spaced apart. The first electrode plate 511 and the second electrode plate 512 together form a capacitor 51. The pressure sensing surface 510 may include a surface of the first electrode plate 511 away from the second electrode plate 512. The first electrode plate 511 may sense external pressure and generate a corresponding deformation. A pressure resonance cavity 513 may be formed between the first electrode plate 511 and the second electrode plate 512.

[0193] Exemplarily, the pressure resonance cavity 513 may be a sealed pressure resonance cavity. For example, the pressure resonance cavity 513 may be a vacuum pressure resonance cavity. In this way, the sensitivity of the pressure sensing surface 510 in the first electrode plate 511 to the external pressure may be improved, thereby improving the sensitivity of the pressure sensor 50.

[0194] Step S140: A first inductor 53 is formed on a side of the first insulating layer 52 away from the second electrode 512. The first end of the first inductor 53 can be coupled to the first electrode 511, and the second end of the first inductor 53 can be coupled to the second electrode 512. The first inductor 53 and the capacitor 51 together form a pressure sensing loop. The parameters of the resonant signal in the pressure sensing loop are used to characterize the pressure value of the pressure sensing surface 510.

[0195] The structural features of the first inductor 53 have been described in detail above and will not be repeated here.

[0196] In some examples, step S140 may include: forming the first inductor 53 on a surface of the first insulating layer 52 away from the second electrode plate 512 by a screen printing process.

[0197] In some examples, such as Figure 4 As shown, the pressure sensor 50 may further include a first lead 514. The first lead 514 may pass through the first insulating layer 52, and two ends of the first lead 514 may be coupled to the first end of the first inductor 53 and the first electrode plate 511, respectively, that is, the first end of the first inductor 53 and the first electrode plate 511 may be coupled through the first lead 514.

[0198] Step S140 may include: forming a through hole 517 penetrating the first insulating layer 52 by an etching process, and one end of the through hole 517 may be connected to the second electrode plate 512. Then, the through hole 517 is filled with a conductive medium 515. Then, a first inductor 53 is formed on a side of the first insulating layer 52 away from the second electrode plate 512, and the other end of the through hole 517 may be connected to the second end of the first inductor 53, so that the second end of the first inductor 53 and the second electrode plate 512 may be coupled through the conductive medium 515 in the through hole 517.

[0199] In this way, the first lead 514 and the through hole 517 have simple structures, which facilitates connecting the two ends of the first inductor 53 in series with the two plates of the capacitor 51. In addition, the first lead 514 is short and the through hole 517 has a large diameter, so that the resistance of the first lead 514 and the conductive medium 515 in the through hole 517 is small, and the first lead 514 and the conductive medium 515 in the through hole 517 have a small loss of electric energy in the pressure sensing circuit, which can improve the working efficiency of the pressure sensor 50.

[0200] Exemplarily, the material of the first lead 514 and the material of the conductive medium 515 may include at least one of gold, silver, copper or tin. For example, the material of the first lead 514 and the material of the conductive medium 515 may both be silver. The material of the first lead 514 and the material of the conductive medium 515 may be the same or different.

[0201] In some examples, such as Figure 5 As shown, step S120 may include: forming a fourth insulating layer 59 on the surface of the first insulating layer 52 by a deposition process. Then, forming a second electrode 512 on the surface of the fourth insulating layer 59 away from the first insulating layer 52. Step S140 may include: forming a first inductor 53 on the surface of the first insulating layer 52 away from the fourth insulating layer 59. The fourth insulating layer 59 may be located between the second electrode 512 and the first insulating layer 52.

[0202] In some other examples, step S120 may further include: forming a fourth insulating layer 59 by a deposition process on a surface of the first insulating layer 52 away from the second electrode plate 512. Step S140 may include: forming a first inductor 53 on a surface of the fourth insulating layer 59 away from the first insulating layer 52. The fourth insulating layer 59 may be located between the first insulating layer 52 and the first inductor 53.

[0203] In this way, the fourth insulating layer 59 can insulate the second electrode plate 512. The fourth insulating layer 59 can increase the spacing distance between the second electrode plate 512 and the first inductor coil 53, and can reduce the parasitic capacitance between the second electrode plate 512 and the first inductor coil 53, that is, reduce the parasitic capacitance between the capacitor 51 and the first inductor coil 53, so that the pressure sensing circuit formed by the capacitor 51 and the first inductor coil 53 in series has higher stability, thereby improving the stability and accuracy of the pressure sensor 50.

[0204] Exemplarily, the material of the fourth insulating layer 59 may be the same as the material of the first insulating layer 52 , which will not be described in detail herein.

[0205] In some embodiments, Fig.11A As shown, the above step S130 may include steps S131 to S133.

[0206] Step S131: forming a pressure sensing film 56. Fig. 11B As shown, the pressure sensing film 56 may include a main body 561 and a frame 562 connected to each other. The frame 562 may at least surround the circumference of the main body 561 .

[0207] The structural features of the pressure sensing membrane 56 have been described in detail above and will not be repeated here.

[0208] Exemplarily, the main body portion 561 and the frame portion 562 may be an integral structure connected to each other, that is, the pressure sensing film 56 may be an integral structure, which can ensure the strength and rigidity of the pressure sensing film 56 .

[0209] In some examples, step S131 may include: forming the pressure sensing film 56 by a deposition process (eg, chemical vapor deposition). The pressure sensing film 56 may be a whole-layer structure with uniform size.

[0210] The surface of the pressure sensing film 56 away from the first electrode plate 511 to be manufactured later can withstand and sense external pressure. The external pressure sensed by the pressure sensing film 56 can be transmitted to the first electrode plate 511, causing the first electrode plate 511 to deform, thereby causing the spacing distance D between the first electrode plate 511 and the second electrode plate 512 to change, thereby causing the change in the parameters of the resonant signal in the pressure sensing loop. By obtaining the change in the parameters of the resonant signal in the pressure sensing loop, the pressure value of the pressure sensing film 56 can be detected.

[0211] In other examples, step S131 may include: forming a pressure sensing material layer by a deposition process (e.g., chemical vapor deposition). Afterwards, removing a portion of the pressure sensing material layer in the middle region by an etching process (e.g., inductively coupled plasma (ICP) etching process), retaining another portion of the pressure sensing material layer in the middle region to form a main body 561, and retaining the pressure sensing material layer in the edge region to form a frame portion 562. The portion of the frame portion 562 extending from the main body 561 in a direction away from the first insulating layer 52 can enclose a receiving groove 563 together with the main body 561. That is, the main body 561 and the frame portion 562 form a pressure sensing film 56 with a receiving groove 563.

[0212] The receiving groove 563 can be used to receive an object that applies pressure to the pressure sensing membrane 56. For example, in the semiconductor processing equipment 100, the receiving groove 563 can be used to receive broken residues of the intake pipe 30, which can reduce the probability of displacement of the object that applies pressure to the pressure sensing membrane 56 and improve the measurement accuracy of the pressure sensor 50.

[0213] For example, Figure 4 and Figure 6 As shown, the frame portion 562 formed in step S131 may extend from the main body portion 561 toward the first insulating layer 52 .

[0214] Step S132 : forming a third insulating layer 58 and a first electrode plate 511 in sequence on one side of the main body 561 .

[0215] In some examples, step S132 may include: forming a first electrode plate 511 on a side of the pressure sensing film 56 away from the receiving groove 563 .

[0216] For example, Figure 4 and Figure 6 As shown, step S132 may include: forming a third insulating layer 58 by a deposition process on a surface of the pressure sensing film 56 away from the receiving groove 563. Exemplarily, the material of the third insulating layer 58 may be the same as that of the first insulating layer 52, which will not be described in detail here.

[0217] Thereafter, the first electrode plate 511 is formed on a surface of the third insulating layer 58 away from the main body 561 .

[0218] The orthographic projection of the third insulating layer 58 on the first insulating layer 52 may cover the orthographic projection of the first electrode plate 511 on the first insulating layer 52 .

[0219] In this way, the third insulating layer 58 can insulate the first electrode plate 511. In addition, the third insulating layer 58 can isolate the external high temperature to prevent the first electrode plate 511 from being burned by the high temperature.

[0220] Step S133: The pressure sensing film 56 and the first insulating layer 52 are enclosed together to form a first accommodation cavity 526. The first electrode plate 511 and the second electrode plate 512 can both be located in the first accommodation cavity 526. It can be understood that the pressure resonance cavity 513 can be located in the first accommodation cavity 526.

[0221] In some examples, step S133 may include: using a vacuum bonding process to enclose the pressure sensing film 56 and the first insulating layer 52 to form a first accommodating cavity 526 .

[0222] The pressure sensing film 56 can sense external pressure and transmit the pressure to the first electrode plate 511 , so that the thickness of the pressure resonance cavity 513 changes, thereby causing the parameters of the resonance signal in the pressure sensing loop to change.

[0223] It should be noted that the method for preparing the pressure sensor may also include: first performing step S131 and step S132 in sequence, then performing step S110 and step S120 in sequence, and then performing step S133. Step S140 may be performed before step S133 or after step S133, and the order of each step may be flexibly selected according to actual needs.

[0224] In some examples, the material of the pressure sensing film 56 includes silicon carbide. Silicon carbide has stable chemical properties, high thermal conductivity, small thermal expansion coefficient and good wear resistance, so that the pressure sensing film 56 has good high temperature resistance and good wear resistance, thereby improving the high temperature resistance of the pressure sensor 50. In addition, the pressure sensing film 56 made of silicon carbide has good stability and high sensitivity, so that the pressure sensor 50 can achieve micro-nano force measurement.

[0225] In some embodiments, Fig. 12A As shown, the method for preparing the pressure sensor 50 may further include steps S150 to S170.

[0226] like Figure 4 , Figure 5 and Figure 6 As shown, step S150: forming a base 55. The base 55 may include a base 551 and a wall 552 connected to each other.

[0227] The structural features of the base 55 have been described in detail above and will not be repeated here.

[0228] Exemplarily, step S150 may include: forming the base 55 by a deposition process. The base 55 may be a whole-layer structure with uniform size along a direction perpendicular to the first electrode plate 511 (ie, the second direction Y), and the wall 552 may surround the circumference of the base 551 .

[0229] Exemplarily, step S150 may include: forming a base material layer by a deposition process. Then, removing a portion of the base material layer in the middle region by an etching process, retaining another portion of the base material layer in the middle region to form a base 551, and retaining the base material layer in the edge region to form a wall 552. The base 551 and the wall 552 may form a base 55 of an integral structure. The wall 552 may extend from the base 551 to one side, and the wall 552 may surround the peripheral side of the second inductor coil 54 and the peripheral side of the base 551 to be manufactured subsequently.

[0230] The base 55 can support and protect the second inductor coil 54 that is subsequently manufactured, and the base 55 can also isolate the second inductor coil 54 from the external high temperature environment, so the base 55 can also provide heat insulation for the second inductor coil 54 .

[0231] Step S160: forming a second insulating layer 57 and a second inductor 54 on the base 55 in sequence. Fig. 12B As shown, the second inductor coil 54 may be located on a side of the first inductor coil 53 away from the first insulating layer 52 , and the second inductor coil 54 and the first inductor coil 53 are arranged opposite to each other and spaced apart.

[0232] The preparation method of the second inductor 54 may refer to the preparation method of the first inductor 53 , and will not be described in detail here.

[0233] The structural features of the second inductor 54 have been described in detail above and will not be repeated here.

[0234] The second inductor 54 can be used to perform frequency sweep measurement on the pressure sensing circuit. An alternating magnetic field can be generated in the second inductor 54, and the alternating magnetic field can be coupled to the pressure sensing circuit through the first inductor 53. The coupling between the second inductor 54 and the first inductor 53 will cause the voltage in the second inductor 54 to drop significantly. When the voltage in the second inductor 54 drops significantly, the resonant frequency point of the pressure sensing circuit can be reached (that is, the impedance of the pressure sensing circuit is equal to the resistance of the first inductor 53, and at this time the reactance of the first inductor 53 is equal to the capacitive reactance of the capacitor 51). By detecting the change in the electrical signal (such as voltage) in the second inductor 54, the resonant signal of the pressure sensing circuit can be obtained.

[0235] In some examples, step S160 may include: forming a second insulating layer 57 on the surface of the base 55 by a deposition process. Then, forming a second inductor 54 on the surface of the second insulating layer 57 away from the base 55 .

[0236] The second insulating layer 57 can separate the second inductor 54 from the base 55, and the second insulating layer 57 can insulate the second inductor 54. In addition, the second insulating layer 57 can isolate the external high temperature to prevent the second inductor 54 from being burned by the high temperature.

[0237] Exemplarily, the material of the second insulating layer 57 may be the same as the material of the first insulating layer 52 , which will not be described in detail herein.

[0238] Step S170: the base 55 and the first insulating layer 52 together form a second accommodating cavity 534. Both the first inductor coil 53 and the second inductor coil 54 may be located in the second accommodating cavity 534.

[0239] Exemplarily, step S170 may include: using a vacuum bonding process to enclose the base 55 and the first insulating layer 52 together to form a second receiving cavity 534 .

[0240] In this way, the first inductance coil 53 and the second inductance coil 54 can be spaced apart from other components in the pressure sensor 50, which can reduce the influence of other components in the pressure sensor 50 on the first inductance coil 53 and the second inductance coil 54, thereby reducing the interference of other components in the pressure sensor 50 on the resonant signal in the pressure sensing circuit, and can improve the accuracy of the second inductance coil 54 in detecting the resonant signal, thereby improving the accuracy of the pressure sensor 50.

[0241] It should be noted that the preparation order of the above step S110, step S130 and step S150 can be interchanged or prepared simultaneously, and the preparation order of the above step S110, step S130 and step S150 can be flexibly adjusted according to actual needs. Fig.10 , Fig.11A and Fig. 12A This is just an example and is not intended to be limiting.

[0242] In summary, in the pressure sensor preparation method provided by some embodiments of the present disclosure, in any of the above-mentioned embodiments of the pressure sensor 50 prepared, the first inductor 53 and the capacitor 51 can form a pressure sensing circuit together. The pressure sensing surface 510 of the capacitor 51 can sense the pressure, and the change in pressure can cause the capacitance value of the capacitor 51 to change, and the change in capacitance value can also cause the resonant signal generated in the pressure sensing circuit to change. By acquiring the resonant signal in the pressure sensing circuit, the pressure value of the pressure sensing surface 510 can be detected. In addition, the first insulating layer 52 can be located between the first inductor 53 and the capacitor 51, so that the first inductor 53 and the capacitor 51 are arranged at intervals, and the parasitic capacitance between the second electrode 512 in the capacitor 51 and the first inductor 53 can be reduced, and the stability of the pressure sensing circuit formed by the capacitor 51 and the first inductor 53 in series can be improved, thereby improving the stability and accuracy of the pressure sensor 50.

[0243] Figure 13 to Figure 15 They are respectively flow charts of a monitoring method for semiconductor processing equipment according to some embodiments.

[0244] The present disclosure also provides a method for monitoring semiconductor processing equipment. The method for monitoring semiconductor processing equipment can be applied to the semiconductor processing equipment 100 as in the above embodiment. Fig.13 As shown, the monitoring method of semiconductor processing equipment may include steps S210 to S230.

[0245] Step S210 : obtaining a resonance signal of the pressure sensor 50 in the semiconductor processing equipment 100 .

[0246] In some examples, step S210 may include: by detecting the pressure sensing loop, when the reactance of the first inductor 53 is equal to the capacitive reactance of the capacitor 51 , acquiring a resonant signal of the pressure sensing loop in the pressure sensor 50 .

[0247] In some examples, such as Figure 4 , Figure 5 and Figure 6 As shown, in the case where the pressure sensor 50 includes a second inductor 54, step S210 may include: by detecting the change in the electrical signal (e.g., voltage) in the second inductor 54, when the change in the electrical signal in the second inductor 54 is greater than or equal to a preset electrical signal threshold, obtaining the resonant signal of the pressure sensing circuit in the pressure sensor 50.

[0248] Step S220: Determine a target parameter of the resonance signal, where the target parameter is used to characterize the pressure value received by the pressure sensor 50. The target parameter may include at least one of frequency, amplitude, and phase.

[0249] In some examples, such as Fig.14 As shown, step S220 may include: determining the target parameters of the resonance signal by filtering, converting and amplifying the resonance signal.

[0250] Exemplarily, the resonance signal may be filtered by a filter, thereby reducing the noise of the resonance signal and improving the accuracy of the resonance signal.

[0251] Exemplarily, the resonance signal may be converted by a signal converter so as to determine a target parameter of the resonance signal.

[0252] For example, the resonance signal may be amplified by an amplifier, so that the weak resonance signal can be processed, thereby increasing the detection range of the pressure sensor 50 and improving the sensitivity of the pressure sensor 50 .

[0253] Exemplarily, after step S220, the following may further be included: storing the target parameters of the resonance signal in a memory for subsequent data analysis.

[0254] Step S230: When the pressure value of the pressure sensor 50 represented by the target parameter is greater than or equal to a preset first pressure threshold, a warning signal is issued.

[0255] In some examples, taking the target parameter as frequency, step S230 may include: obtaining a fitting curve between the frequency of the resonance signal and the pressure value of the pressure sensor 50 by testing the frequency of the resonance signal and the pressure value of the pressure sensor 50. Then, according to the fitting curve, the pressure value of the pressure sensor 50 represented by the frequency is obtained. Then, when the pressure value of the pressure sensor 50 represented by the frequency is greater than or equal to the preset first pressure threshold, an alarm signal may be issued through an alarm. The alarm may include an indicator light and / or a voice announcer.

[0256] When the target parameter is amplitude and / or phase, step S230 may also refer to the example where the target parameter is frequency, which is not described in detail here.

[0257] In this way, the broken intake pipe 30 residues or falls onto the pressure sensor 50, and the possible breakage of the intake pipe 30 can be monitored in real time through the pressure sensor 50. By comparing the pressure value of the pressure sensor 50 represented by the target parameter and the preset first pressure threshold, the pressure sensor 50 can monitor the possible breakage of the intake pipe 30 and timely feedback through an alarm signal, so as to timely confirm the condition of the intake pipe 30. When the intake pipe 30 is confirmed to be broken, the intake pipe 30 can be repaired or replaced in time, ensuring the quality and accuracy of the semiconductor material transported through the intake pipe 30, and improving the film size accuracy and film thickness uniformity of the prepared semiconductor device, thereby improving the manufacturing yield of the semiconductor device prepared by the semiconductor processing equipment 100.

[0258] In some embodiments, Fig.15 As shown, in the monitoring method of the semiconductor processing equipment 100, the above step S230 may include step S231.

[0259] Step S231: When the pressure value of the pressure sensor 50 represented by the target parameter is greater than or equal to a preset second pressure threshold, the semiconductor processing equipment 100 is controlled to stop working.

[0260] The second pressure threshold may be greater than or equal to the first pressure threshold. It can be understood that the second pressure threshold used to control the semiconductor processing equipment 100 to stop working may be greater than or equal to the first pressure threshold used to issue an alarm signal.

[0261] In some examples, when the second pressure threshold is greater than the first pressure threshold, step S230 may include: when the pressure value of the pressure sensor 50 represented by the target parameter is greater than or equal to the preset first pressure threshold and less than the preset second pressure threshold, issuing an alarm signal. Thereafter, when the pressure value of the pressure sensor 50 represented by the target parameter is greater than or equal to the preset second pressure threshold, controlling the semiconductor processing equipment 100 to stop working.

[0262] In this way, by comparing the pressure value of the pressure sensor 50 represented by the target parameter with the first pressure threshold and the second pressure threshold, the pressure sensor 50 can monitor the possible breakage of the intake pipe 30 and timely feedback through an alarm signal, so as to timely confirm the condition of the intake pipe 30. When the intake pipe 30 is confirmed to be broken, the intake pipe 30 can be repaired or replaced in time, which can reduce the impact of false alarms on the working efficiency of the semiconductor processing equipment 100. By comparing the pressure value of the pressure sensor 50 represented by the target parameter with the preset second pressure threshold, the semiconductor processing equipment 100 can be controlled to stop working in time when the intake pipe 30 is broken, so as to reduce the problem of abnormal quality of semiconductor materials that continue to be transported by the broken intake pipe 30, resulting in low production yield of semiconductor devices. The film size accuracy and film thickness uniformity of the prepared semiconductor device can be improved, thereby improving the production yield of the semiconductor device prepared by the semiconductor processing equipment 100.

[0263] In some examples, when the second pressure threshold is equal to the first pressure threshold, step S230 may include: when the pressure value of the pressure sensor 50 represented by the target parameter is greater than or equal to the preset second pressure threshold, issuing an alarm signal and controlling the semiconductor processing equipment 100 to stop working.

[0264] In this way, the pressure sensor 50 can monitor the possibility of the air intake pipe 30 being broken and timely feedback can be given through an alarm signal, and the semiconductor processing equipment 100 can be controlled to stop working in time, which can almost avoid the problem of abnormal quality of semiconductor materials continued to be transported by the broken air intake pipe 30, resulting in low production yield of semiconductor devices. The film dimensional accuracy and film thickness uniformity of the prepared semiconductor device can be greatly improved, thereby greatly improving the production yield of the semiconductor device prepared by the semiconductor processing equipment 100.

[0265] It should be noted that wafer breakage, thermocouple breakage or breakage of other components in the semiconductor processing equipment 100 can also be monitored by the pressure sensor 50 using the monitoring method of the semiconductor processing equipment 100 in any of the above embodiments, which is not limited here.

[0266] In summary, in the monitoring method for semiconductor processing equipment provided by the above-mentioned embodiment of the present disclosure, the residue of the broken air intake pipe 30 falls onto the pressure sensor 50, and the possible breakage of the air intake pipe 30 can be monitored in real time through the pressure sensor 50. By comparing the pressure value of the pressure sensor 50 represented by the target parameter and the preset first pressure threshold, the pressure sensor 50 can monitor the possible breakage of the air intake pipe 30 and timely feedback through an alarm signal, so as to timely confirm the condition of the air intake pipe 30. When the air intake pipe 30 is confirmed to be broken, the air intake pipe 30 can be repaired or replaced in time, so as to ensure the quality accuracy of the semiconductor material transported through the air intake pipe 30, improve the film size accuracy and film thickness uniformity of the prepared semiconductor device, and thus improve the manufacturing yield of the semiconductor device prepared by the semiconductor processing equipment 100.

[0267] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any changes or substitutions that can be easily thought of by a person skilled in the art within the technical scope disclosed by the present invention should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A pressure sensor, characterized in that: include: A capacitor, the capacitor comprising a first electrode plate and a second electrode plate arranged opposite to each other; a pressure resonance cavity is provided between the first electrode plate and the second electrode plate; a first insulating layer, at least partially located on a side of the second electrode plate away from the first electrode plate; The first inductor is located on a side of the first insulating layer away from the second electrode plate; the first end of the first inductor is coupled to the first electrode plate, the second end of the first inductor is coupled to the second electrode plate, and the first inductor and the capacitor together form a pressure sensing loop.

2. The pressure sensor according to claim 1, characterized in that: Also includes: The pressure sensing film comprises a main body portion and a frame portion connected to each other; the main body portion is located on a side of the first electrode plate away from the second electrode plate; The frame portion at least surrounds a circumference of the main body portion.

3. The pressure sensor according to claim 2, characterized in that: The pressure sensing film and the first insulating layer together form a first accommodating cavity; the first electrode plate and the second electrode plate are both located in the first accommodating cavity.

4. The pressure sensor according to claim 2, characterized in that: A portion of the frame portion extending from the main body portion in a direction away from the first insulating layer forms a receiving groove together with the main body portion.

5. The pressure sensor according to any one of claims 1 to 4, characterized in that: Also includes: The second inductor is located at a side of the first inductor away from the first insulating layer; the second inductor is opposite to and spaced from the first inductor.

6. The pressure sensor according to claim 5, characterized in that: In a direction perpendicular to the first electrode plate, the spacing distance between the first electrode plate and the second electrode plate is [0.5 cm, 3 cm], the distance between the second electrode plate and the first inductor coil is [1 cm, 3 cm], and the spacing distance between the first inductor coil and the second inductor coil is [0.5 cm, 2 cm].

7. The pressure sensor according to claim 5, characterized in that: Also includes: A base, including a base and a wall connected to each other; The substrate is located on a side of the second inductor coil away from the first inductor coil; the wall body at least surrounds the circumference of the substrate; The base and the first insulating layer together form a second accommodating cavity; the first inductor coil and the second inductor coil are both located in the second accommodating cavity.

8. The pressure sensor according to claim 7, characterized in that: Also includes: a second insulating layer, located between the second inductor coil and the base; The third insulating layer is located on a side of the first electrode plate away from the second electrode plate.

9. The pressure sensor according to any one of claims 1 to 4, characterized in that: Also includes: a fourth insulating layer, located between the second electrode plate and the first inductor coil; through holes are provided in the fourth insulating layer and the first insulating layer; The second end of the first inductor is connected to the second electrode plate through the through hole.

10. A method for preparing a pressure sensor, characterized in that: include: forming a first insulating layer; A second electrode plate is formed on one side of the first insulating layer; A first electrode plate is formed, wherein the first electrode plate and the second electrode plate are arranged opposite to each other, and a pressure resonance cavity exists between the first electrode plate and the second electrode plate; the first electrode plate and the second electrode plate together form a capacitor; A first inductor is formed on a side of the first insulating layer away from the second electrode plate; a first end of the first inductor is coupled to the first electrode plate, a second end of the first inductor is coupled to the second electrode plate, and the first inductor and the capacitor together form a pressure sensing loop.

11. The method for preparing a pressure sensor according to claim 10, characterized in that: The forming of the first electrode plate comprises: forming a pressure-sensitive film, wherein the pressure-sensitive film comprises a main body portion and a frame portion connected to each other, wherein the frame portion at least surrounds a peripheral side of the main body portion; forming a third insulating layer and the first electrode plate in sequence on one side of the main body; The pressure sensing film and the first insulating layer together form a first accommodating cavity, and the first electrode plate and the second electrode plate are both located in the first accommodating cavity.

12. The method for preparing a pressure sensor according to claim 10 or 11, characterized in that: Also includes: forming a base; A second insulating layer and a second inductor coil are sequentially formed on the base; the second inductor coil is arranged opposite to and spaced from the first inductor coil; The base and the first insulating layer together form a second accommodating cavity, and the first inductor coil and the second inductor coil are both located in the second accommodating cavity.

13. A semiconductor processing equipment, characterized in that: include: The shell comprises a shell wall and a base; the shell wall and the base together form a storage cavity; An air inlet pipe at least partially extends into the storage cavity; A rotating shaft is located in the storage cavity; The pressure sensor according to any one of claims 1 to 9 is located in the storage cavity and between the air inlet pipe and the base; the orthographic projection of the pressure sensor on the base at least partially covers the orthographic projection of the air inlet pipe located in the storage cavity on the base; the pressure sensor surrounds the circumference of the rotating shaft.

14. A method for monitoring semiconductor processing equipment, characterized in that: Applied to the semiconductor processing equipment as claimed in claim 13, the monitoring method comprises: Acquiring a resonance signal of the pressure sensor; Determine a target parameter of the resonance signal, wherein the target parameter is used to characterize a pressure value received by the pressure sensor; the target parameter includes at least one of frequency, amplitude and phase; When the pressure value of the pressure sensor represented by the target parameter is greater than or equal to a preset first pressure threshold, issuing a warning signal; and / or, When the pressure value of the pressure sensor represented by the target parameter is greater than or equal to a preset second pressure threshold, the semiconductor processing equipment is controlled to stop working; the second pressure threshold is greater than or equal to the first pressure threshold.

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