Semiconductor device performing light-based calculation and method of operating semiconductor device

Abstract

The invention relates to a semiconductor device performing light-based calculation and an operation method of the semiconductor device. A semiconductor device may include: a color filter array; an optical synaptic array comprising a plurality of light passing paths for passing light incident through the color filter array with independently controlled transmissivity; and an optical-to-digital conversion circuit that converts the light passed through the plurality of light passing paths into digital data.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2023-0106832, filed on August 16, 2023, which is hereby incorporated by reference in its entirety. Technical Field

[0003] Embodiments of the present disclosure relate to a semiconductor device including a computing device and an image sensor, and more particularly to a semiconductor device that performs light-based computing and then converts a result of the light-based computing into digital data. Background Art

[0004] Image reasoning is an important technology in the field of computer vision and generally includes the following process. First, an object is sensed by an image sensor so that digital data is generated. Then, the digital data generated by the image sensor is passed to a processor, where a multiply-accumulate (MAC) calculation is performed and a result can be derived.

[0005] Since image reasoning operations should be performed immediately, high processing speed is required and thus a large amount of energy is consumed. Therefore, in order to increase processing speed and reduce power consumption, a technology that can achieve more efficient image reasoning is desired. Summary of the invention

[0006] In one embodiment, a semiconductor device may include: a color filter array; an optical synapse array including a plurality of light passing paths for transmitting light incident through the color filter array with independently controlled transmittances; and an optical-to-digital conversion circuit that converts the light transmitted through the plurality of light passing paths into digital data.

[0007] The optical-to-digital conversion circuit may convert a value obtained by summing light transmitted through one or more of the plurality of light passage paths into digital data.

[0008] In one embodiment, a method for operating a semiconductor device may include: a step of receiving light through a color filter array; a step of transmitting the light received through the color filter array using multiple light-passing paths, each of the multiple light-passing paths having a programmed transmittance; and an optical-to-digital conversion step of converting the light transmitted through the multiple light-passing paths into digital data.

[0009] In the optical-to-digital conversion step, a value obtained by summing the light transmitted through one or more of the plurality of light passing paths may be converted into digital data. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a configuration diagram of a semiconductor device according to an embodiment.

[0011] Figure 2 is a top view of a color filter array according to one embodiment.

[0012] Figure 3 is a top view of an optical synapse array according to one embodiment.

[0013] Figure 4 is a diagram illustrating a light passing path according to an embodiment.

[0014] Figure 5A and 5B Each of the diagrams illustrates the transfer of light on a light guide line.

[0015] Figure 6 is a perspective view of an optical synapse array according to one embodiment.

[0016] Figure 7 is a diagram illustrating a pixel array of an optical to digital conversion circuit according to one embodiment.

[0017] Figure 8 is a diagram illustrating components of optical-to-digital conversion circuitry associated with pixels of a pixel array according to one embodiment.

[0018] Fig. 9 is a diagram illustrating an overall configuration of an optical-to-digital conversion circuit according to one embodiment.

[0019] Fig.10 is a diagram illustrating calculations performed by a semiconductor device according to one embodiment. DETAILED DESCRIPTION

[0020] Various embodiments are directed to a technique capable of efficiently performing image reasoning.

[0021] According to the embodiments of the present disclosure, image reasoning operations can be efficiently performed.

[0022] Hereinafter, embodiments according to the technical spirit of the present disclosure will be described with reference to the accompanying drawings.

[0023] Figure 1 is a configuration diagram of a semiconductor device 100 according to one embodiment.

[0024] Reference Figure 1 , the semiconductor device 100 may include a color filter array 110, an optical synapse array 130, and an optical to digital conversion circuit 150. Figure 1In the figure, some elements (such as control lines of the optical synapse array 130 and peripheral circuits of the optical-to-digital conversion circuit 150) are not shown in order to clearly indicate the areas where light is transmitted in the color filter array 110, the optical synapse array 120, and the optical-to-digital conversion circuit 150.

[0025] Light from a subject may be input through the color filter array 110. For example, the color filter array 110 is a mosaic color filter for obtaining color information. Figure 2 is a top view of the color filter array 110 according to one embodiment. Figure 2 , the color filter array 110 may include a plurality of repeated units, each of which is composed of 2×2 square color filters (two green color filters G, one red color filter R, and one blue color filter B). The color filters arranged in the form of RGGB in this way are called Bayer color filters. In addition to the Bayer color filter, various types of color filters that change the type or number of color filters used may be used according to the embodiment. For ease of explanation, in Figure 2 Only sixteen color filters are illustrated in FIG. 1 , but color filter array 110 may include a greater number of color filters (eg, millions or tens of millions of color filters).

[0026] The optical synapse array 130 may include a plurality of light passing paths for transmitting light incident through the color filter array 110 at independently controlled transmittances. In other words, each of the plurality of light passing paths may transmit light incident thereon at a transmittance that is adjustable independently of the other light passing paths. Each of the plurality of light passing paths having an adjustable transmittance may be described as applying a weight to the light. For example, it may be considered that a high value weight is applied to light passing through a light passing path having a high transmittance, and a low value weight is applied to light passing through a light passing path having a low transmittance.

[0027] The optical-to-digital conversion circuit 150 may convert light passing through the light passing path of the optical synapse array 130 into digital data. The optical-to-digital conversion circuit 150 may convert a value obtained by summing the light transmitted through several light passing paths into digital data. That is, the values ​​multiplied by the weights of the optical synapse array 130 may be summed and converted into digital data. Ultimately, the digital data is data obtained by converting the values ​​obtained by multiplying the light incident on the color filter array 110 from the object by various weights and summing the values ​​to which the weights are applied (that is, the values ​​obtained by performing a multiplication-accumulation (MAC) calculation on the light) into a digital form.

[0028] Figure 3 According to an embodiment Figure 1 Top view of the optical synapse array 130 .

[0029] Reference Figure 3 , the optical synapse array 130 may include a plurality of light passing paths LP and bit lines BL1 to BL12 for controlling the plurality of light passing paths LP. Figure 3 The dotted lines in indicate the positions of the color filters so as to indicate the corresponding relationship with the color filters in the color filter array 110. Figure 3 In the embodiment of the present invention, nine light passing paths LP correspond to each color filter in the color filter array 110. That is, light incident on one color filter can be transferred to the optical-to-digital conversion circuit 150 through the nine light passing paths LP. In this case, because the transmittance of each of the light passing paths LP is programmable, even if light is incident on the same color filter, the amount of light can be different depending on which light passing path LP of the nine light passing paths LP the light passes through.

[0030] Figure 4 is a diagram showing a suitable Figure 3 FIG. 1 is a diagram of a single light passing path LP in FIG. 1 .

[0031] Reference Figure 4 , the light passing path LP may include the light guide line GL and the phase change materials PCM1 to PCM3.

[0032] The light guide line GL may be a line for transmitting incident light while reflecting the incident light internally. The light guide line GL is preferably made of a material that has electrical conductivity and allows light to pass through. For example, the light guide line GL may have a conductivity sufficient to act as an electrode to change the state of the phase change materials PCM1 to PCM3 together with the conductive line (e.g., word line), while having a transmittance sufficient to act as an optical path to allow light to pass through. The following materials may be used as materials for the light guide line GL. (1) Silicon: By doping silicon with an appropriate concentration of impurities, a light guide line that allows light to pass through and has electrical conductivity may be achieved. (2) Special glass: By doping a special glass material having optical transmission properties and light guiding properties much higher than ordinary glass with metal or non-metal atoms, a light guide line that has electrical conductivity and transmits light may be achieved. (3) Semiconductor nanostructure: A nanoscale semiconductor structure may have electrical conductivity and be used as a light guide line for conducting light.

[0033] The phase change materials PCM1 to PCM3 may be formed as an outer wall surrounding the light guide GL. The phase change materials PCM1 to PCM3 are programmable and may have different reflectivities according to the programming state. For example, each of the phase change materials PCM1 to PCM3 may be programmed to be one of a crystalline state and an amorphous state, and may have a relatively high reflectivity (R C ), and has a relatively low reflectivity (RA In particular, each of the phase change materials PCM1 to PCM3 may have a first reflectivity (R C ), and has a second reflectivity (R A ), wherein the first reflectivity is higher than the second reflectivity. Figure 4 2A and 2B describe, by way of example, that the light passing path LP includes the three phase change materials PCM1 to PCM3 , but the number of phase change materials included in the light passing path LP may vary according to embodiments.

[0034] Preferably, the portion of the outer wall of the light guide GL not covered by the phase change materials PCM1 to PCM3 is surrounded by a material capable of total reflection with high reflectivity. In particular, a specific material may surround one or more portions of the outer wall exposed by the phase change materials PCM1 to PCM3 and have a reflectivity high enough to cause total reflection at the interface between the specific material and the outer wall of the light guide GL.

[0035] Figure 5A The diagram shows the transmission of light in the phase change material PCM1 portion of the light guide GL when the phase change material PCM1 is in the first state (eg, crystalline state). Figure 5A , it can be confirmed that most of the light is transmitted while being reflected by the phase change material PCM1. Figure 5B The diagram shows the transmission of light in the phase change material PCM1 portion of the light guide GL when the phase change material PCM1 is in the second state (eg, amorphous state). Figure 5B , it can be confirmed that some light is transmitted without being reflected by the phase change material. In other words, referring to Figure 5B The phase change material PCM1 can transmit a large amount of incident light and reflect the remaining incident light to the light guide GL at the interface between the phase change material PCM1 and the light guide GL. Therefore, only some of the light received by the first end of the light guide GL can be transmitted to the second end of the light guide GL.

[0036] Refer again Figure 4 When the phase change materials PCM1 to PCM3 are in the crystalline state, the reflectivity of the phase change materials PCM1 to PCM3 is R C And the reflectivity of the phase change materials PCM1 to PCM3 when the phase change materials PCM1 to PCM3 are in the amorphous state is R A When the light L input to the light guide GL IN and the light L output from the light guide GL OUT There can be one of the following relationships (1) to (4).

[0037] Case (1) [All three phase change materials PCM1 to PCM3 are in amorphous state]: L OUT=L IN *(R A )^3

[0038] Case (2) [two of the phase change materials PCM1 to PCM3 are in an amorphous state, and one of the phase change materials PCM1 to PCM3 is in a crystalline state]: L OUT =L IN *(R A )^2*(R C )

[0039] Case (3) [one of the phase change materials PCM1 to PCM3 is in an amorphous state, and two of the phase change materials PCM1 to PCM3 are in a crystalline state]: L OUT =L IN *(R A )*(R C )^2

[0040] Case (4) [All three phase change materials PCM1 to PCM3 are in the crystalline state]: L OUT =L IN *(R C )^3

[0041] That is, the four weights [(R A )^3、(R A )^2*(R C )、(R A )*(R C )^2 and (R C )^3] can be applied to the light L input to the light path LP. IN and the light L output from the light passing path LP OUT In particular, light L IN Wako L OUT The optical power (eg, light energy per unit time) may each be indicated.

[0042] Figure 6 is a perspective view of an optical synapse array 130 according to one embodiment. To illustrate the optical synapse array in more detail, Figure 6 Only a portion of the optical synapse array 130 is shown in FIG.

[0043] Reference Figure 6, the bit lines BL1 to BL4 may be formed as a guide light GL surrounding the upper end portion of the light passing paths LP1 to LP12. For example, each of the bit lines BL1 to BL4 (e.g., BL1) extends in the first direction I, and is formed to surround the upper end portion of a group of light passing paths (e.g., LP1, LP5, and LP9) arranged in the first direction I. That is, the bit lines BL1 to BL4 may be electrically connected to the guide light GL. The word lines WL11 to WL33 may be formed as a phase change material PCM surrounding the light passing path LP. For example, each of the word lines WL11 to WL33 (e.g., WL11) extends in the second direction II, and is formed to surround a portion of a group of light passing paths (e.g., LP1, LP2, LP3, and LP4) arranged in the second direction II and set at substantially the same level in the third direction III.

[0044] The bit lines BL1 to BL4 and the word lines WL11 to WL33 may be used to program the phase change material PCM included in the light passing path LP of the optical synapse array 130, and when the phase change material PCM is distinguished from each other by (I, II, III) coordinates, the bit lines BL1 to BL4 may select the II coordinate, and the word lines WL11 to WL33 may select the I coordinate and the III coordinate.

[0045] Each of the phase change material PCMs can be selected using the bit lines BL1 to BL4 and the word lines WL11 to WL33, and thus each of the phase change material PCMs can be programmed to a desired value. For example, the phase change material PCM of the middle portion of the light passing path LP1 can be programmed using the bit line BL1 and the word line WL12, the phase change material PCM of the upper portion of the light passing path LP7 can be programmed using the bit line BL3 and the word line WL23, and the phase change material PCM of the lower portion of the light passing path LP12 can be programmed using the bit line BL4 and the word line WL31.

[0046] The programming of the phase change material PCM can be performed by applying a signal (e.g., current) of appropriate strength for an appropriate time so that the phase change material PCM is programmed using the bit lines BL1 to BL4 and the word lines WL11 to WL33 connected to the phase change material PCM. For example, the inner surface of the phase change material PCM can be connected to the outer surface having a light passing path connected to the upper end portion of the bit line, and the outer surface of the phase change material PCM can be connected to the inner surface of the word line. Here, the strength of the current and the length of time for applying the current can be different when the phase change material PCM is programmed to the crystalline state and when the phase change material PCM is programmed to the amorphous state.

[0047] Figure 7 is a diagram illustrating a method according to an embodiment Figure 1 FIG. 7 is a diagram of a pixel array 710 of optical to digital conversion circuit 150 .

[0048] The optical to digital conversion circuit 150 includes a pixel array 710 for receiving light transmitted from the optical synapse array 130. The optical to digital conversion circuit 150 may also include circuits and peripheral circuits for controlling the pixel array 710, but in Figure 7 Only the pixel array 710 of the optical to digital conversion circuit 150 is illustrated. Figure 7 The dotted lines in are used to indicate the correspondence between the color filters in the color filter array 110 and the light passing path LP of the optical synapse array 130. Figure 7 In the embodiment of FIG. 1 , nine pixels P in the pixel array 710 may correspond to each color filter in the color filter array 110, and the pixels P in the pixel array 710 may correspond to the light passing paths LP of the optical synapse array 130 in a one-to-one manner. In other words, each of the pixels P in the pixel array 710 may be coupled to a corresponding light passing path LP in the light passing paths LP of the optical synapse array 130.

[0049] The number is added to the pixel P, and the number is used to group the pixel P, and the sensing results of the pixel P are summed. For example, the first result can be obtained by Figure 7 The second result can be derived by summing the sensing results of the sixteen first pixels P1 in Figure 7 The sensing results of the sixteen second pixels P2 in are summed and derived.

[0050] Figure 8 is a diagram illustrating components of optical to digital conversion circuit 150 associated with pixel P1 of pixel array 710 according to one embodiment. For example, Figure 8 Shown with Figure 7 Circuit elements associated with sixteen first pixels P1 of the pixel array 710.

[0051] The selection line SEL1 may be a line for selecting the pixel P1. The output lines OUT11 to OUT14 may be lines for outputting the sensing result of the pixel P1. The selection line SEL1 and the output lines OUT11 to OUT14 may be lines dedicated to the pixel P1 in the pixel array 710. The pixel P2 may use a dedicated selection line SEL2 (not shown) and dedicated output lines OUT21 to OUT24 (not shown) different from the line of the pixel P1. Similarly, the pixels P3 to P9 may also use their dedicated selection lines SEL3 to SEL9 (not shown) and output lines OUT31 to OUT34, OUT41 to OUT44, OUT51 to OUT54, OUT61 to OUT64, OUT71 to OUT74, OUT81 to OUT84 and OUT91 to OUT94 (not shown), respectively.

[0052] Each of the pixels P1 may include a photodiode 801, an amplifier 803, a selection transistor 805, and a resistor 807. The photodiode 801 may generate a current corresponding to the amount of light received, and the amplifier 803 may amplify and output a voltage generated by the current of the photodiode 801. When the signal of the selection line SEL1 is activated to have a first value (e.g., a high level), the selection transistor 805 in each of the pixels P1 may be turned on to output the voltage amplified by the amplifier 803 to the output lines OUT11 to OUT14 through the resistor 807. Pixels P2 to P9 ( Figure 8 Pixel P1 (not shown) may also be configured in substantially the same manner as pixel P1.

[0053] The summing circuits 810_1 to 850_1 may sum the output voltages of the pixels P1. Each of the summing circuits 810_1 to 840_1 may sum the voltages generated from the four pixels and output through each of the output lines OUT11 to OUT14 to generate each of the voltages SUM11 to SUM14, and the summing circuit 850_1 may sum the four voltages SUM11 to SUM14 output from the summing circuits 810_1 to 840_1 to generate the output voltage SUM_TOTAL1. The output voltage SUM_TOTAL1 of the summing circuit 850_1 may be the sum of the output voltages of the sixteen pixels P1. Each of the summing circuits 810_1 to 850_1 may be a summing amplifier (or summing amplifier). The summing circuits 810_1 to 840_1 may include operational amplifiers 811, 821, 831, and 841, and resistors 812, 822, 832, and 842, respectively. Each of the summing circuits 810_1 to 840_1 may function as a summing amplifier together with the resistor 807 of each pixel P1 in the pixel P1. The summing circuit 850_1 may include an operational amplifier 851 and resistors 852 to 856, and may also operate as a summing amplifier to sum the output voltages SUM11 to SUM1 of the summing circuits 810_1 to 840_1 and output the sum thereof. The summing circuits 810_1 to 850_1 may be dedicated to the pixel P1. The summing circuit 810_2 to 850_2 (not shown) for summing the output voltage of pixel P2 can exist separately, and similarly, the summing circuits 810_3 to 850_3, 810_4 to 850_4, 810_5 to 850_5, 810_6 to 850_6, 810_7 to 850_7, 810_8 to 850_8 and 810_9 to 850_9 for summing the output voltages of pixels P3 to P9, respectively, can exist separately.

[0054] The analog-to-digital conversion circuit 870 can generate digital data DIGITAL DATA by converting the output voltage SUM_TOTAL1 of the summing circuit 850_1 from an analog form to a digital form. The analog-to-digital conversion circuit 870 can have components common to all pixels P1 to P9. The analog-to-digital conversion circuit 870 can convert the voltage SUM_TOTAL1 obtained by summing the output values ​​(e.g., voltage) of the pixel P1 from an analog form to a digital form in a section where the signal of the selection line SEL1 is activated, and convert the voltage SUM_TOTAL2 obtained by summing the output voltages of the pixel P2 from an analog form to a digital format in a section where the signal of the selection line SEL2 is activated. Similarly, the analog-to-digital conversion circuit 870 can convert the voltages SUM_TOTAL3 to SUM_TOTAL9 obtained by summing the output voltages of the pixels P3 to P9 from an analog form to a digital form in a section where the signals of the selection lines SEL3 to SEL9 are activated.

[0055] Fig. 9 is a diagram illustrating an overall configuration of an optical-to-digital conversion circuit 150 according to one embodiment.

[0056] Reference Fig. 9 The optical-to-digital conversion circuit 150 includes pixels P1 to P9, nine selection lines SEL1 to SEL9 for selecting the pixels P1 to P9, and 36 output lines (eg, Figure 8 The output lines OUT11 to OUT14 are shown, due to lack of space, in Fig. 9 36 output line symbols are omitted), 45 summing circuits 910 (eg Figure 8 The summing circuits 810_1 to 850_1) and the analog-to-digital conversion circuit 870.

[0057] Fig.10 is a diagram illustrating a semiconductor device (eg Figure 1 Graph of calculations performed by semiconductor device 100).

[0058] Reference Fig.10, the sixteen inputs may indicate light input by sixteen color filters in the color filter array 110. Programmable weights may be applied to the sixteen inputs through the optical synapse array 130. The optical synapse array 130 may apply nine different weights to each of the sixteen inputs. Thus, 144 values ​​to which weights are applied may be generated. The optical to digital conversion circuit 150 may generate nine summed voltages SUM_TOTAL1 to SUM_TOTAL9 by adding the 144 values ​​in units of sixteen values, and generate digital data DIGITAL DATA by converting the nine summed voltages SUM_TOTAL1 to SUM_TOTAL9 from an analog form to a digital form. In other words, a plurality of groups may be determined based on a plurality of pixels so that each of the groups includes a specific value in the value. For example, the 144 values ​​are grouped into nine groups corresponding to the nine pixels P1 to P9, respectively, so that each of the nine groups includes sixteen values. The optical-to-digital conversion circuit 150 may sum the sixteen values ​​in each of the nine groups, thereby generating nine summed voltages SUM_TOTAL1 to SUM_TOTAL9 .

[0059] Therefore, the digital data DIGITAL DATA may be a result obtained by performing a multiply-accumulate (MAC) calculation on the image input to the color filter array 110 .

[0060] The semiconductor device 100 can perform MAC calculations on an image by applying weights to light, electrically converting the light, summing the converted values, and converting the summed values ​​from analog form to digital form. Because important calculations are performed based on light, the speed of the calculations can be increased and the current consumption required for the calculations can be reduced. In particular, conventional semiconductor devices convert optical signals into digital data, pass the converted data to a separate circuit device (e.g., a processor), and then perform a multiplication-accumulation (MAC) operation in the processor to generate an output signal. A semiconductor device (e.g., semiconductor device 100) according to an embodiment of the present disclosure can directly perform a multiplication operation on an optical signal, convert the optical signal into an electrical signal, and perform an accumulation operation on the electrical signal without passing the electrical signal from the semiconductor device to a separate circuit device (processor). Therefore, compared with conventional semiconductor devices, the operating speed of a semiconductor device according to an embodiment can be increased, and the current consumption for calculation can be reduced.

[0061] Although the embodiments according to the technical idea of ​​the present disclosure are described above with reference to the accompanying drawings, this is only used to explain the embodiments according to the concept of the present disclosure, and the embodiments of the present disclosure are not limited to the above embodiments. Without departing from the technical idea of ​​the present disclosure defined in the following claims, technicians in the field to which the present disclosure belongs can make various types of replacements, modifications and changes to the embodiments, and these replacements, modifications and changes should be interpreted as belonging to the scope of the present disclosure.

Claims

1. A semiconductor device comprising: Color filter array; an optical synapse array comprising a plurality of light passage paths that pass light incident through the color filter array at independently controlled transmittances; as well as An optical-to-digital conversion circuit converts the light transmitted through the plurality of light transmission paths into digital data. 2 . The semiconductor device according to claim 1 , wherein the optical-to-digital conversion circuit converts one or more values ​​each obtained by summing the light transmitted through a specific light passage path among the plurality of light passage paths into the digital data.

3. The semiconductor device according to claim 2, wherein each of the plurality of light passing paths of the optical synapse array comprises: A light guide for transmitting the incident light; as well as One or more phase change materials surround the outer wall of the light guiding line. 4 . The semiconductor device of claim 3 , wherein each of the one or more phase change materials is programmable and has a reflectivity adjusted according to a programming state.

5. The semiconductor device according to claim 4, wherein the portion of the outer wall of the light guide exposed by the one or more phase change materials is surrounded by a specific material, the specific material having a reflectivity high enough to cause total reflection between the specific material and the outer wall of the light guide.

6. The semiconductor device according to claim 4, wherein each of the one or more phase-change materials has one of a crystalline state and an amorphous state according to a programming result, and Each of the one or more phase-change materials has a first reflectivity when it is in the crystalline state, and has a second reflectivity when it is in the amorphous state, and the first reflectivity is higher than the second reflectivity.

7. The semiconductor device according to claim 3, wherein the optical synapse array comprises a plurality of word lines and a plurality of bit lines, and The phase change material of the plurality of light passing paths is electrically connected between the plurality of word lines and the plurality of bit lines.

8. The semiconductor device according to claim 7, wherein the phase change material comprises a first phase change material connected to the first word line and the first bit line and a second phase change material connected to the second word line and the second bit line, and The first word line is different from the second word line, or the first bit line is different from the second bit line, or both. 9 . The semiconductor device according to claim 8 , wherein an inner surface of the first phase-change material is connected to a corresponding light passing path having an end portion connected to the first bit line, and an outer surface of the first phase-change material is connected to an inner surface of the first word line.

10. The semiconductor device according to claim 7, wherein each of the plurality of bit lines extends in a first direction and surrounds an end portion of a first group of light passing paths in the first direction among the light passing paths, and Each of the plurality of word lines extends in a second direction intersecting the first direction and surrounds a portion of a second group of light passing paths in the second direction among the arranged light passing paths.

11. The semiconductor device according to claim 2, wherein the optical to digital conversion circuit comprises: a plurality of pixels that convert light transmitted to the plurality of pixels into voltages, the plurality of pixels corresponding to the plurality of light passing paths in a one-to-one manner; a plurality of summing circuits for summing the voltages output from the plurality of pixels; as well as The analog-to-digital conversion circuit converts the summed voltage into the digital data.

12. The semiconductor device according to claim 11, wherein each pixel of the plurality of pixels comprises: Photodiode; an amplifier, amplifying an output voltage of the photodiode; a resistor having one end connected to the output line; as well as The transistor transfers the amplified voltage of the amplifier to the other end of the resistor in response to the level of the selection line. 13 . The semiconductor device of claim 11 , wherein each of the summing circuits comprises one or more summing amplifiers.

14. The semiconductor device according to claim 2, wherein the optical to digital conversion circuit comprises a plurality of pixels that convert light transferred to the plurality of pixels into a voltage, and wherein the specific light passing path among the plurality of light passing paths is included in each of a plurality of groups, and the plurality of groups are determined based on the plurality of pixels.

15. A method for operating a semiconductor device, the method comprising: receiving light through a color filter array; passing the light received through the color filter array using a plurality of light passing paths, each of the plurality of light passing paths having a programmed transmittance; and The light transmitted through the plurality of light passing paths is converted into digital data.

16. The operating method according to claim 15, wherein in converting the transmitted light into digital data, one or more values ​​each obtained by summing the light transmitted through a specific light passing path among the plurality of light passing paths are converted into the digital data.

17. The operating method according to claim 15, wherein converting the transmitted light into digital data comprises: converting light delivered to the plurality of light passage paths into a voltage; generating a summed voltage, each of the summed voltages being obtained by summing a specific converted voltage of the converted voltages in each of a plurality of groups; as well as The digital data is generated by converting the summed voltage from an analog form to a digital form. The operating method according to claim 17 , wherein the plurality of groups are determined based on a plurality of pixels.

19. The operating method according to claim 15, wherein each of the plurality of light-passing paths comprises one or more phase-change materials, and The transmittances of the plurality of light passing paths are determined according to the programming results of the one or more phase change materials.

20. The operating method according to claim 15, further comprising: Prior to receiving the light, a transmittance of each of the plurality of light passing paths is adjusted by programming a phase change material included in each of the plurality of light passing paths.

Images