Plasma reaction apparatus, semiconductor component, and processing method thereof

Abstract

A plasma reaction device, a semiconductor component, and a processing method thereof are disclosed. The processing method includes: providing a component whose surface comprises a polycrystalline structure; performing an ion implantation process on the polycrystalline structure; and after the ion implantation process, performing microwave crystallization treatment to transform the polycrystalline structure into a near-single-crystal structure. The diffraction peak pattern obtained by X-ray diffraction of the near-single-crystal structure component consists of a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 lower than the intensity of the main peak. This method can improve the corrosion resistance of the component and reduce particulate contaminants.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a plasma reaction apparatus, semiconductor components, and processing methods thereof. Background Technology

[0002] Plasma etching plays a crucial role in integrated circuit manufacturing. As the aspect ratio of plasma etching processes continues to increase, the plasma corrosion environment experienced by components within the etching chamber becomes increasingly harsh. Existing corrosion-resistant coatings gradually exhibit microparticle contamination and fail to meet process requirements during these processes.

[0003] Research has found that one of the reasons for the failure of the above coatings is that conventional corrosion-resistant coatings are polycrystalline structures. Under increasingly strong physical bombardment and chemical corrosion by plasma, the grains with low atomic density and orientation on the coating surface will be preferentially fluorinated, causing the grain volume to expand. After exceeding a certain threshold, the grains will fall off from the coating surface, forming tiny particulate contaminants, which cause the micro-particulate contaminants to fail during the etching process. Summary of the Invention

[0004] The technical problem solved by this invention is to provide a plasma reaction device, semiconductor components and their processing methods to reduce particulate pollutants.

[0005] To solve the above-mentioned technical problems, the present invention provides a method for processing semiconductor components, comprising: providing a component, the surface of which includes a polycrystalline structure; performing an ion implantation process on the polycrystalline structure; and performing microwave crystallization treatment after the ion implantation process to transform the polycrystalline structure into a quasi-single-crystal structure, wherein the diffraction peak pattern obtained by X-ray diffraction of the quasi-single-crystal structure includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 of the intensity of the main peak.

[0006] Optionally, the component is a sintered body, and the sintered body has a polycrystalline structure before the ion implantation process.

[0007] Optionally, the material of the sintered body includes: rare earth metal oxides; the sintered body after microwave crystallization treatment is a rare earth metal fluoride sintered body or a rare earth metal fluoride sintered body; or, the material of the sintered body includes: rare earth metal fluoride oxides; the sintered body after microwave crystallization treatment is a rare earth metal fluoride sintered body.

[0008] Optionally, the component includes: a component body and a corrosion-resistant coating located on the component body, wherein the corrosion-resistant coating is polycrystalline before the ion implantation process.

[0009] Optionally, the corrosion-resistant coating formation process includes: physical vapor deposition, thermal spraying, plasma spraying, or atomic layer deposition.

[0010] Optionally, the material of the corrosion-resistant coating is a rare earth metal oxide; after microwave crystallization treatment, the corrosion-resistant coating is a rare earth metal fluoride coating or a rare earth metal fluoride coating; or, the material of the corrosion-resistant coating is a rare earth metal fluoride, and after microwave crystallization treatment, the corrosion-resistant coating is a rare earth metal fluoride coating.

[0011] Optionally, the rare earth metal includes at least one rare earth element selected from Y, La, Ce, Pr, Nd, Sm, Eu, Td, Gd, Dy, Ho, Er, Tm, Yb, or Lu.

[0012] Optionally, the parameters of the ion implantation process include: implanted ions including fluoride ions, implantation energy of 10 kEV to 80 kEV, and implanted ion concentration of 10... 23 Number of atoms per square centimeter ~ 10 25 Atoms per square centimeter, injection time of 100 to 140 minutes, room temperature of 25 to 40 degrees Celsius.

[0013] Optionally, the injection energy is higher than the energy that the semiconductor component withstands during the etching process.

[0014] Optionally, the parameters of the microwave crystallization treatment include: power of 1500 watts to 2500 watts, temperature of 80 degrees Celsius to 120 degrees Celsius, and time of 20 minutes to 40 minutes.

[0015] Accordingly, the present invention also provides a semiconductor component, comprising: a component, the surface of which includes a quasi-single crystal structure, wherein the diffraction peak pattern obtained by X-ray diffraction of the quasi-single crystal structure component includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least less than 1 / 25 of the intensity of the main peak, and the full width at half maximum (FWHM) of the main peak is less than 1°.

[0016] Optionally, the component is a sintered body, which is a rare earth metal fluoride sintered body or a rare earth metal fluoride sintered body.

[0017] Optionally, the component includes: a component body and a corrosion-resistant coating located on the component body; the corrosion-resistant coating has a near-single-crystal structure, and the material of the corrosion-resistant coating includes: a rare earth metal fluoride coating or a rare earth metal fluoride coating.

[0018] Optionally, the intensity of each secondary peak is at least 1 / 300th of the intensity of the primary peak.

[0019] Optionally, the intensity of each secondary peak is at least 1 / 1000 less than the intensity of the primary peak.

[0020] Accordingly, the present invention also provides a plasma reaction apparatus, comprising: a reaction chamber, wherein the reaction chamber is a plasma environment; and the aforementioned semiconductor component, which is exposed to the plasma environment.

[0021] Optionally, the plasma reaction device is a capacitively coupled plasma reaction device; the components include at least one of the following: a gas spray head, a gasket, a nozzle, a gas distribution plate, an electrostatic chuck, a focusing ring, an insulating ring, a covering ring, and a plasma confinement device.

[0022] Optionally, the plasma reaction device is an inductively coupled plasma reaction device; the components include at least one of the following: a ceramic cover plate, a bushing, a gas nozzle, a focusing ring, an insulating ring, an electrostatic chuck, a covering ring, or a plasma confinement device.

[0023] Compared with the prior art, the technical solution of the embodiments of the present invention has the following beneficial effects:

[0024] In the semiconductor component processing method provided by this invention, the surface of the component comprises a polycrystalline structure. First, fluorine-containing ions are implanted into the polycrystalline structure via an ion implantation process. During this process, the original crystal planes of the polycrystalline structure are broken and new crystal planes are formed. These newly formed crystal planes are more susceptible to the effects of subsequent microwave crystallization treatment. This microwave crystallization treatment can input energy into the newly formed crystal planes, causing them to rearrange their atoms, which is beneficial for forming a near-single-crystal structure. This near-single-crystal structure has a basically consistent atomic arrangement orientation and a basically uniform atomic density, which can greatly reduce the probability of failure caused by preferential fluorination in certain areas, improve plasma corrosion resistance, and further improve process yield. Attached Figure Description

[0025] Figure 1 This is a schematic diagram of the structure of a plasma processing device according to the present invention;

[0026] Figure 2 This is a schematic diagram of another plasma processing device according to the present invention;

[0027] Figure 3 This is a schematic diagram of the structure of a semiconductor component processing method according to the present invention;

[0028] Figure 4 , Figure 6 and Figure 7 This is a schematic diagram of the structure of each step in the semiconductor component processing method of the present invention;

[0029] Figure 5 yes Figure 4 The XRD patterns of components including those with polycrystalline structures are shown.

[0030] Figure 8 yes Figure 7 XRD patterns of components after microwave crystallization treatment. Detailed Implementation

[0031] As described in the background section, existing semiconductor components are prone to particulate contamination.

[0032] Research has found that with increasingly harsh corrosive environments such as plasma, existing corrosion-resistant coatings (e.g., those containing Yb₂O₃, Y₂O₃, YF₃, YOF, etc.) are gradually exhibiting microparticle contamination and failing to meet process requirements. The main reason for this failure is that existing corrosion-resistant coatings are polycrystalline. Under increasingly intense physical bombardment and chemical corrosion from plasma, the low-density, oriented grains on the coating surface are preferentially fluorinated, causing grain volume expansion. Once this expansion exceeds a certain threshold, the grains detach from the coating surface, forming tiny particulate contaminants that cause failure during the etching process.

[0033] In existing technologies, the XRD patterns of corrosion-resistant coatings Yb₂O₃ consist of crystal planes with various orientations, such as (440), (222), and (211), indicating that the atoms in the Yb₂O₃ coating have different orientations. Therefore, under actual service conditions, the corrosion resistance exhibited is the average of the corrosion resistance of these different orientations of atoms. When failure occurs, it can be determined that the grains with the lowest atomic surface density will preferentially corrode, forming microparticle contaminants.

[0034] To address these shortcomings, attempts are being made to form single-crystal or near-single-crystal structures. Existing technologies typically employ single-crystal targets or optimized coating processes. In contrast, this invention utilizes a combination of ion implantation and microwave crystallization to prepare near-single-crystal structures. The X-ray diffraction patterns of the components in these near-single-crystal structures consist of a main peak and several secondary peaks, where the intensity of each secondary peak is at least 1 / 25th that of the main peak. These near-single-crystal structures exhibit strong corrosion resistance, which helps reduce particulate contamination.

[0035] To make the above-mentioned objectives, features and beneficial effects of the present invention more apparent and understandable, specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0036] Figure 1 This is a schematic diagram of the structure of a plasma processing device according to the present invention.

[0037] Please refer to Figure 1The plasma reaction device includes a reaction chamber 100, which is a plasma environment. Semiconductor components and the inner wall of the reaction chamber 100 are exposed to the plasma environment. The plasma includes at least one of F-containing plasma, Cl-containing plasma, H-containing plasma, or O-containing plasma.

[0038] The plasma reaction apparatus also includes a base 101, which supports the substrate W to be treated, and the plasma is used to treat the substrate W. Because plasma is highly corrosive, to prevent the surface of semiconductor components from being corroded by plasma, it is necessary to improve the corrosion resistance of the semiconductor components.

[0039] In this embodiment, the plasma reaction device is a capacitively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include at least one of the following: spray head 102, upper grounding ring 104, moving ring, gas distribution plate 105, gas buffer plate, electrostatic chuck assembly 103, lower grounding ring 106, covering ring 107, focusing ring 108, insulating ring, and plasma confinement device 109.

[0040] Figure 2 This is a schematic diagram of another plasma processing device according to the present invention.

[0041] In this embodiment, the plasma reaction device is an inductively coupled plasma reaction device. Accordingly, the semiconductor components exposed to the plasma environment include at least one of the following: ceramic plate, inner sleeve 600, gas nozzle 601, gas distribution plate, gas pipe flange, electrostatic chuck assembly 602, cover ring 603, focusing ring 604, insulating ring, and plasma confinement device 605.

[0042] During plasma etching, physical bombardment and chemical reactions also affect all semiconductor components in contact with the plasma within the etching chamber, causing corrosion. Prolonged exposure to the plasma corrosion environment damages the surface structure, leading to the precipitation of bulk components, which detach from the surface and form tiny particles that contaminate the wafer. Advanced semiconductor manufacturing has stringent requirements for preventing microparticle contamination; for example, the number of particles larger than 45nm must be zero, and the contact area must be less than 10. Therefore, semiconductor components exposed to the plasma environment need to possess strong corrosion resistance.

[0043] The following is a detailed explanation of the processing methods for semiconductor components:

[0044] Figure 3 This is a schematic diagram of a semiconductor component processing method according to the present invention.

[0045] Please refer to Figure 3 Step S1: Provide a component, the component comprising a polycrystalline structure; Step S2: Perform an ion implantation process on the polycrystalline structure; Step S3: After the ion implantation process, perform microwave crystallization treatment to transform the polycrystalline structure into a quasi-single-crystal structure, the diffraction peak pattern obtained by X-ray diffraction of the quasi-single-crystal structure includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 of the intensity of the main peak.

[0046] The following is a detailed explanation of each step, illustrated with structural diagrams:

[0047] Figure 4 , Figure 6 and Figure 7 This is a schematic diagram of the structure of each step in the semiconductor component processing method of the present invention; Figure 5 yes Figure 4 XRD patterns of semiconductor components; Figure 8 yes Figure 7 XRD pattern of semiconductor components after microwave crystallization.

[0048] Please refer to Figure 4 and Figure 5 A component 300 is provided, the component 300 comprising a polycrystalline structure.

[0049] In this embodiment, the component 300 is a sintered body with a polycrystalline structure. The material of the sintered body is an oxide of a rare earth metal or a fluorine oxide of a rare earth metal. Here, we will use a yttrium oxide sintered body as an example for illustration:

[0050] from Figure 5 It can be seen that the yttrium oxide sintered body includes multiple crystal orientations, such as (222), (211), and (440). When component 300 faces plasma corrosion, the corrosion resistance of atoms in different crystal orientations is different. Therefore, under actual service conditions, the corrosion resistance effect exhibited is the average value of the corrosion resistance effects of these atoms in different crystal orientations. When failure occurs, grains with the lowest atomic surface density will preferentially corrode and easily form micro-particle contaminants. In order to improve the corrosion resistance of semiconductor components, the following is achieved through the synergistic effect of ion implantation and microwave crystallization, the specific details of which are as follows:

[0051] Please refer to Figure 6 The polycrystalline structure is subjected to an ion implantation process.

[0052] Ions are implanted into the polycrystalline structure via ion implantation. During the implantation process, the original crystal planes of the polycrystalline structure are broken, and new crystal planes are formed. These newly formed crystal planes are more susceptible to the effects of subsequent microwave crystallization treatment. This microwave crystallization treatment can input energy into the newly formed crystal planes, causing them to rearrange their atoms, which is beneficial for forming a near-single-crystal structure.

[0053] The parameters of the ion implantation process include: implanted ions include fluoride ions, the implantation energy is 10 kEV to 80 kEV, and the implanted ion concentration is 10... 23 Number of atoms per square centimeter ~ 10 25 Atoms per square centimeter, injection time of 100 to 140 minutes, room temperature of 25 to 40 degrees Celsius.

[0054] The significance of selecting the implantation energy is as follows: if the implantation energy is less than 10 kiloelectron volts, the original crystal plane of the polycrystalline structure is difficult to be destroyed and new crystal planes are difficult to form. In this case, the subsequent influence of microwave crystallization is small, and it is difficult to form a quasi-single crystal structure. Then the corrosion resistance of semiconductor components is poor. If the implantation energy is greater than 80 kiloelectron volts, the requirements for ion implantation equipment will be too high.

[0055] Furthermore, the injection energy is higher than the energy that the semiconductor components withstand during the etching process, which allows the polycrystalline structure to be fully fluorinated during the plasma injection process. This prevents fluorine in the process gas from entering the polycrystalline structure if the energy that the semiconductor components withstand during the etching process is higher than the injection energy. The volume of the fluorinated polycrystalline structure would then expand and fall off. Therefore, the injection energy being higher than the energy that the semiconductor components withstand during the etching process helps to further reduce particulate contamination.

[0056] Please refer to Figure 7 After ion implantation, microwave crystallization is performed to transform the polycrystalline structure into a quasi-single-crystal structure. The diffraction peak pattern obtained by X-ray diffraction of the quasi-single-crystal structure components includes a main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 lower than the intensity of the main peak.

[0057] The microwave crystallization process is performed within a microwave crystallization apparatus, such as... Figure 7 As shown, the microwave crystallization device includes: a reaction chamber 400; a support stage 404 disposed at the bottom of the reaction chamber 400; a component 300 placed on the support stage 404; and a rotating component 401 disposed below the support stage 404 for driving the support stage 404 and the component 300 located on the support stage 404 to rotate around the central axis of the support stage 404, so that microwaves can irradiate various areas of the component 300.

[0058] The microwave crystallization device further includes a microwave source 403 and a waveguide transmission system 402. The microwave source 403 is used to generate microwaves with a preset power, and the waveguide transmission system 402 is used to transmit microwaves to the reaction cavity 400 so as to perform microwave crystallization on the surface of the component 300. This is beneficial for delivering energy to the surface of the component 300, causing it to rearrange, and is beneficial for forming a quasi-single crystal structure.

[0059] The newly formed crystal planes on the surface of ion-implanted components are susceptible to the effects of microwave crystallization treatment. This treatment injects energy into the newly formed crystal planes, causing them to rearrange their atoms. This helps reduce the intensity ratio of secondary peaks to primary peaks in the X-ray diffraction pattern obtained from the component surface, thus promoting the formation of a single-crystal-like structure. Figure 8 As shown, from Figure 8 As can be seen, after microwave crystallization treatment, the X-ray diffraction pattern of the component surface includes a main peak and several secondary peaks. The intensity of each secondary peak is at least 1 / 25th the intensity of the main peak, indicating that the component surface exhibits a near-single-crystal structure. Under actual service conditions, the atomic arrangement at different locations in this near-single-crystal structure is relatively uniform. Therefore, there is no situation where a grain at a particular location has poor corrosion resistance and is preferentially corroded, thus minimizing particulate contamination.

[0060] The parameters for the microwave crystallization process include: power of 1500 watts to 2500 watts, temperature of 80 degrees Celsius to 120 degrees Celsius, and time of 20 minutes to 40 minutes.

[0061] The significance of selecting the power range of the microwave crystallization treatment is that: if the power is less than 1500 watts, the microwave crystallization treatment will not have enough effect on the surface of the component after ion implantation, making it difficult to form a single crystal-like structure after microwave crystallization treatment; if the power is greater than 2500 watts, it will not only consume too much energy, but also easily damage the component.

[0062] In another embodiment, the intensity of each secondary peak is at least 1 / 300th of the intensity of the primary peak, meaning that the surface of the component exhibits a more pronounced single-crystal-like structure. Under actual service conditions, the atomic arrangement at different locations in this single-crystal-like structure is relatively uniform. Therefore, there is no situation where grains at any particular location have poor corrosion resistance and are preferentially corroded, thus minimizing the risk of particulate contamination.

[0063] In another embodiment, the intensity of each secondary peak is at least 1 / 1000 of the intensity of the primary peak, the surface of the component is basically a single crystal structure, and the single crystal structure has a consistent atomic arrangement orientation and the same atomic density, which can greatly reduce the probability of failure caused by preferential fluorination in local areas, improve the resistance to plasma corrosion, and further improve the process yield.

[0064] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method of processing a semiconductor component, characterized by, The application relates to a semiconductor component, and relates to a semiconductor component and a preparation method thereof. Providing a component, the component being a sintered body, or the component comprising a corrosion-resistant coating, the sintered body or the corrosion-resistant coating being a polycrystalline structure; Performing an ion implantation process on the polycrystalline structure; After the ion implantation process, performing a microwave crystallization treatment to convert the polycrystalline structure into a quasi-single crystal structure, the quasi-single crystal structure of the component being obtained by X-ray diffraction and having a diffraction peak spectrum including one main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 of the intensity of the main peak; The material of the sintered body includes rare earth metal oxides; after the microwave crystallization treatment, the sintered body is a rare earth metal oxyfluoride sintered body or a rare earth metal fluoride sintered body; or the material of the sintered body includes rare earth metal oxyfluorides; after the microwave crystallization treatment, the sintered body is a rare earth metal fluoride sintered body; The material of the corrosion-resistant coating is rare earth metal oxides; after the microwave crystallization treatment, the corrosion-resistant coating is a rare earth metal oxyfluoride coating or a rare earth metal fluoride coating; or the material of the corrosion-resistant coating is rare earth metal oxyfluorides, and after the microwave crystallization treatment, the corrosion-resistant coating is a rare earth metal fluoride coating.

2. The semiconductor component processing method according to Claim 1, wherein The component further includes a component body, and the corrosion-resistant coating is located on the surface of the component body, and the corrosion-resistant coating is a polycrystalline structure before the ion implantation process.

3. The semiconductor component processing method according to Claim 2, wherein The forming process of the corrosion-resistant coating includes a physical vapor deposition process, a thermal spraying process, a plasma spraying process or an atomic layer deposition process.

4. The semiconductor component processing method according to Claim 1, wherein The rare earth metal includes at least one of Y, La, Ce, Pr, Nd, Sm, Eu, Td, Gd, Dy, Ho, Er, Tm, Yb or Lu.

5. The semiconductor component processing method according to Claim 1, wherein The parameters of the ion implantation process include: the implanting ions include fluorine ions, the implanting energy is 10-80 kiloelectron-volts, the implanting ion concentration is 10 23 atoms / cm2-10 25 atoms / cm2, the implanting time is 100-140 minutes, and the normal temperature is 25-40 degrees Celsius.

6. The semiconductor component processing method according to Claim 5, wherein The implantation energy is higher than the energy that the semiconductor component bears in an etching process.

7. The semiconductor component processing method according to Claim 1, wherein The parameters of the microwave crystallization treatment include a power of 1500 W to 2500 W, a temperature of 80 DEG C to 120 DEG C and a time of 20 min to 40 min.

8. A semiconductor component formed by the processing method according to any one of claims 1 to 7. The application relates to a semiconductor component, and relates to a semiconductor component and a preparation method thereof. The component is a sintered body, or the component comprises a corrosion-resistant coating, the surface of the sintered body or the corrosion-resistant coating being a quasi-single crystal structure, the quasi-single crystal structure of the component being obtained by X-ray diffraction and having a diffraction peak spectrum including one main peak and several secondary peaks, wherein the intensity of each secondary peak is at least 1 / 25 of the intensity of the main peak, and the half-peak width of the main peak is less than 1 DEG.

9. The semiconductor component according to claim 8, wherein The component is a sintered body, and the sintered body is a rare earth metal oxyfluoride sintered body or a rare earth metal fluoride sintered body.

10. The semiconductor component according to claim 8, wherein The component includes a component body and a corrosion-resistant coating located on the component body; the corrosion-resistant coating is a quasi-single crystal structure, and the material of the corrosion-resistant coating includes a rare earth metal oxyfluoride coating or a rare earth metal fluoride coating.

11. The semiconductor component according to claim 8, wherein The intensity of each secondary peak is at least 1 / 300 of the intensity of the main peak.

12. The semiconductor component according to claim 11, wherein The intensity of each secondary peak is at least 1 / 1000 of the intensity of the main peak.

13. A plasma reaction apparatus characterized by comprising: The application relates to a semiconductor component, and relates to a semiconductor component and a preparation method thereof. A reaction cavity is provided, and the reaction cavity is a plasma environment; The semiconductor component is exposed to the plasma environment.

14. The plasma reaction apparatus as claimed in claim 13, wherein The plasma reaction device is a capacitively coupled plasma reaction device; and the components include at least one of a gas shower head, a liner, a nozzle, a gas distribution plate, an electrostatic chuck, a focus ring, an insulator ring, a cover ring, or a plasma confinement device.

15. The plasma reaction apparatus as claimed in claim 13, wherein The plasma reaction device is an inductively coupled plasma reaction device; and the components include at least one of a ceramic cover plate, a liner, a gas nozzle, a focus ring, an insulator ring, an electrostatic chuck, a cover ring, or a plasma confinement device.

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