Semiconductor processing apparatus and gas distribution device therefor

Abstract

A semiconductor processing equipment and a gas distribution device thereof, the gas distribution device has two independent gas distribution channels which are isolated from each other, each gas distribution channel has an independent gas inlet channel and a gas exhaust channel, each gas distribution channel contains a plurality of gas flow channels, and the reaction gas in each gas flow channel is distributed to the reaction chamber of the semiconductor processing equipment through a gas spray assembly. The gas flow channel avoids using a shape with a large bending radius, effectively improves the flow speed of the reaction gas, avoids vortex flow, is beneficial to rapid exhaust of the gas, avoids gas residue, and improves the process efficiency. Ensure reliable physical isolation between different gas distribution channels, prevent premature mixing of reaction gases to produce particulate matter, and improve product yield. The gas spray assembly is full of micropores, which ensures uniform diffusion of the reaction gas into the reaction chamber, ensuring the uniformity of the substrate process.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a semiconductor processing equipment and a gas distribution device thereof. BACKGROUND

[0002] In the semiconductor processing equipment, a plurality of chemical gases are needed to be introduced into the reaction chamber for processing the substrate. Different chemical gases should be prevented from meeting before entering the reaction chamber. At present, different gas inlets are mainly used to respectively deliver different chemical gases into the reaction chamber. In order to realize the physical isolation between different gases, the arrangement of the gas inlets is usually designed to be more complex. More commonly, the gas inlets are arranged as spiral channels, which results in long gas inlets, long time for gas flowing from the gas inlet to the gas outlet, large resistance for gas flowing, and vortex flow of gas in the gas inlets, which makes it difficult for the gas to be quickly exhausted from the gas inlets, resulting in that the gas inlets remain excess reaction gas, which reduces the process efficiency. The remaining reaction gas for a long time may generate particles, which further affects the product quality. In addition, the spiral gas inlets are prone to gas channeling, which causes the physical isolation between different gas inlets to fail, and different reaction gases to react in advance to generate particulate by-products, thereby causing product defects and adversely affecting the yield and reliability of the chip.

[0003] The statements herein merely provide background information related to the present application and do not necessarily constitute the prior art. SUMMARY

[0004] The present application aims to provide a semiconductor processing equipment and a gas distribution device thereof, which effectively improves the flow speed of the reaction gas, avoids vortex flow, is beneficial to the rapid exhaust of the gas, avoids gas residue, improves the process efficiency, ensures reliable physical isolation between different gas distribution channels, prevents the reaction gas from mixing in advance to generate particles, ensures uniform diffusion of the reaction gas into the reaction chamber, and ensures the uniformity of the substrate process.

[0005] In order to achieve the above-mentioned purpose, the present application provides a gas distribution device arranged in the reaction chamber of the semiconductor processing equipment, which comprises:

[0006] a gas distribution plate having a first gas distribution channel and a second gas distribution channel isolated from each other, the first gas distribution channel comprising a first inlet diffusion zone, a plurality of first gas flow channels, each of the first gas flow channels comprising an inlet end and an outlet end, the inlet ends of the plurality of first gas flow channels being in communication with the first inlet diffusion zone, the outlet ends of the plurality of first gas flow channels being in communication with a first outlet diffusion zone, the second gas distribution channel comprising a second inlet diffusion zone, a plurality of second gas flow channels, each of the second gas flow channels comprising an inlet end and an outlet end, the inlet ends of the plurality of second gas flow channels being in communication with the second inlet diffusion zone, the outlet ends of the plurality of second gas flow channels being in communication with a second outlet diffusion zone;

[0007] a gas inlet module comprising at least one first gas inlet channel and at least one second gas inlet channel, the first gas inlet channel being in communication with the first inlet diffusion zone, the second gas inlet channel being in communication with the second inlet diffusion zone, the gas inlet module being configured to supply reaction gas to the gas distribution plate;

[0008] a gas exhaust module comprising at least one first gas exhaust channel and at least one second gas exhaust channel, the first gas exhaust channel being in communication with the first outlet diffusion zone, the second gas exhaust channel being in communication with the second outlet diffusion zone, the gas exhaust module being configured to exhaust reaction gas from the gas distribution plate;

[0009] a gas shower assembly in communication with the first gas distribution channel and the second gas distribution channel, the gas shower assembly being configured to supply reaction gas to the reaction chamber.

[0010] the plurality of first gas flow channels are parallel to each other, and the plurality of second gas flow channels are parallel to each other.

[0011] each of the first gas flow channels has the same gas flow rate, and each of the second gas flow channels has the same gas flow rate.

[0012] Optionally, the gas distribution plate comprises a cover plate, a first gas diffusion plate, and a second gas diffusion plate arranged in a stack.

[0013] the first gas diffusion plate has a plurality of first recesses, a first arc-shaped groove, and a second arc-shaped groove on a periphery of the first recesses, the first arc-shaped groove being in communication with one end of the first recesses, the second arc-shaped groove being in communication with the other end of the first recesses, the first recesses and a lower surface of the cover plate forming the first gas flow channels, the first arc-shaped groove and the lower surface of the cover plate forming the first inlet diffusion zone, the second arc-shaped groove and the lower surface of the cover plate forming the first outlet diffusion zone.

[0014] The upper surface of the second gas diffusion plate is provided with a plurality of second grooves, and a third arc-shaped groove and a fourth arc-shaped groove located at the periphery of the second grooves, the second grooves and the lower surface of the first gas diffusion plate form the second gas flow channel, the third arc-shaped groove and the lower surface of the first gas diffusion plate form the second inlet diffusion zone, and the fourth arc-shaped groove and the lower surface of the first gas diffusion plate form the second outlet diffusion zone.

[0015] The first arc-shaped groove and the second arc-shaped groove are in communication with each other to form a complete annular ring; and the third arc-shaped groove and the fourth arc-shaped groove are in communication with each other to form a complete annular ring.

[0016] The depth of the first groove is less than the thickness of the first gas diffusion plate, and the depth of the second groove is less than the thickness of the second gas diffusion plate.

[0017] The cross section of the first groove is rectangular or V-shaped, and the cross section of the second groove is rectangular or V-shaped.

[0018] The gas spraying assembly comprises a plurality of first gas spraying channels and a plurality of second gas spraying channels.

[0019] One end of the first gas spraying channel is in communication with the first gas flow channel, and the other end is located on the lower surface of the second gas diffusion plate.

[0020] One end of the second gas spraying channel is in communication with the second gas flow channel, and the other end is located on the lower surface of the second gas diffusion plate.

[0021] The gas distribution plate comprises a first sealing assembly and a second sealing assembly, the first sealing assembly is located between the lower surface of the cover plate and the upper surface of the first gas diffusion plate, and the second sealing assembly is located between the lower surface of the first gas diffusion plate and the upper surface of the second gas diffusion plate.

[0022] Optionally, the gas distribution plate comprises a plurality of spaced block gratings, the upper surface of the block grating is covered with a top cover, and the lower surface of the block grating is in contact with the gas spraying assembly; the gap between adjacent block gratings forms a first gas flow channel in the first gas distribution channel; the lower surface of the block grating has a third groove, and the third groove forms a second gas flow channel in the second gas distribution channel.

[0023] The gas distribution plate further comprises a first gas partition plate and a second gas partition plate, the first gas partition plate and the second gas partition plate are respectively arranged at two ends of the block strip grid, an upper surface of the first gas partition plate and the top cover form a first inlet diffusion zone, the first inlet diffusion zone is communicated with a gap between the block strip grid, a lower surface of the first gas partition plate and the gas spraying assembly form a second inlet diffusion zone, the second inlet diffusion zone is communicated with the third groove, an upper surface of the second gas partition plate and the top cover form a first outlet diffusion zone, the first outlet diffusion zone is communicated with a gap between the block strip grid, a lower surface of the second gas partition plate and the gas spraying assembly form a second outlet diffusion zone, the second outlet diffusion zone is communicated with the third groove.

[0024] The gas inlet module comprises at least one concentric gas inlet, the concentric gas inlet comprises a concentric gas inlet inner tube and a concentric gas inlet outer tube, the gas inlet inner tube is connected with the first gas partition plate, an inner space of the gas inlet inner tube forms the first gas inlet channel, the second gas inlet channel is formed between the gas inlet inner tube and the gas inlet outer tube; the gas exhaust module comprises at least one concentric gas exhaust, the concentric gas exhaust comprises a concentric gas exhaust inner tube and a concentric gas exhaust outer tube, the gas exhaust inner tube is connected with the second gas partition plate, an inner space of the gas exhaust inner tube forms the first gas exhaust channel, the second gas exhaust channel is formed between the gas exhaust inner tube and the gas exhaust outer tube.

[0025] The gas spraying assembly comprises a porous material plate, the porous material plate has a plurality of micropores, the micropores are communicated with the first gas flow channel and the second gas flow channel.

[0026] The application further provides a semiconductor processing equipment, comprising:

[0027] A reaction cavity;

[0028] The gas distribution device is arranged on the top of the reaction cavity;

[0029] A susceptor is arranged in the reaction cavity and used for carrying a substrate.

[0030] The first gas inlet channel is connected with an external first gas source, and the second gas inlet channel is connected with an external second gas source.

[0031] The first gas exhaust channel and the second gas exhaust channel are connected with an external gas exhaust device.

[0032] The semiconductor processing equipment is a deposition equipment or an etching equipment.

[0033] Compared with the prior art, the technical scheme of the application has at least the following beneficial effects:

[0034] The present application effectively improves the flow speed of the reaction gas in each gas distribution channel of the gas distribution plate, avoids vortex flow of the gas in the gas channel, is beneficial to rapid exhaust of the gas from the gas channel, improves the process efficiency, avoids the generation of particulate matter due to residual reaction gas in the gas channel, ensures reliable physical isolation between different gas distribution channels, prevents the reaction gas from mixing in advance before entering the reaction chamber to generate particulate matter, ensures uniform diffusion of the reaction gas to the surface of the substrate in the reaction chamber, ensures uniformity of the substrate process, and improves product yield. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 is a structural schematic diagram of a semiconductor processing equipment provided in an embodiment of the present application.

[0036] Figure 2 is a structural schematic diagram of a gas distribution device provided in an embodiment of the present application.

[0037] Figure 3 is a structural schematic diagram of a gas distribution device provided in an embodiment of the present application.

[0038] Figure 4 is a partial vertical sectional view of Figure 3

[0039] Figure 5 is a top perspective view of the first gas diffusion plate in Figure 3

[0040] Figure 6 is a top perspective view of the second gas diffusion plate in Figure 3

[0041] Figure 7 is a structural schematic diagram of a gas distribution device provided in another embodiment of the present application.

[0042] Figure 8 is a sectional perspective structural schematic diagram of Figure 7

[0043] Figure 9 is a front structural schematic diagram of the block-shaped strip grid and the gas separation plate in Figure 7

[0044] is a back structural schematic diagram of the block-shaped strip grid and the gas separation plate in Figure 10 Figure 7 is a sectional structural schematic diagram of the gas inlet module and the gas exhaust module in

[0045] Figure 11 Figure 7 is a sectional structural schematic diagram of the gas inlet module and the gas exhaust module in DETAILED DESCRIPTION

[0046] ​​​​​​The following is a detailed description of specific embodiments of the application. Figures 1-11 The following is a detailed description of specific embodiments of the application.

[0047] As shown in Figure 1 , the present application provides a semiconductor processing apparatus, which can be a deposition apparatus or an etching apparatus. The semiconductor processing apparatus comprises a reaction chamber 1, a susceptor 2 disposed in the reaction chamber 1 for carrying a substrate 3, and a gas distribution device 4 disposed on the top of the reaction chamber 1 for introducing different chemical gases into the reaction chamber 1 to process the substrate 3.

[0048] As shown in Figure 2 , the gas distribution device 4 comprises a gas distribution plate 401, a gas inlet module 402, a gas exhaust module 403, and a gas shower assembly 404. The gas distribution plate 401 has first and second gas distribution passages which are isolated from each other. The first gas distribution passage comprises a first inlet diffusion zone, a plurality of first gas flow passages, and a first outlet diffusion zone. Each of the first gas flow passages comprises an inlet end and an outlet end. The inlet ends of the first gas flow passages are in communication with the first inlet diffusion zone, and the outlet ends of the first gas flow passages are in communication with the first outlet diffusion zone. The second gas distribution passage comprises a second inlet diffusion zone, a plurality of second gas flow passages, and a second outlet diffusion zone. Each of the second gas flow passages comprises an inlet end and an outlet end. The inlet ends of the second gas flow passages are in communication with the second inlet diffusion zone, and the outlet ends of the second gas flow passages are in communication with the second outlet diffusion zone. The gas inlet module 402 comprises at least one first gas inlet passage 402-1 and at least one second gas inlet passage 402-2. The first gas inlet passage 402-1 is in communication with the first inlet diffusion zone, and the second gas inlet passage 402-2 is in communication with the second inlet diffusion zone. The gas inlet module 402 is used for feeding reaction gases into the gas distribution plate 401. The gas exhaust module 403 comprises at least one first gas exhaust passage 403-1 and at least one second gas exhaust passage 403-2. The first gas exhaust passage 403-1 is in communication with the first outlet diffusion zone, and the second gas exhaust passage 403-2 is in communication with the second outlet diffusion zone. The gas exhaust module 403 is used for exhausting reaction gases in the gas distribution plate 401. The gas shower assembly 404 is in communication with the first and second gas distribution passages, and is used for feeding reaction gases into the reaction chamber 1.

[0049] In one embodiment of the present application, as shown in Figure 3 , the gas distribution plate 401 comprises a cover plate 405, a first gas diffusion plate 406, and a second gas diffusion plate 407 which are stacked one on top of another. As shown in Figure 4 and Figure 5As shown, the upper surface of the first gas diffusion plate 406 is provided with a plurality of first grooves 408, and a first arc-shaped groove 409 and a second arc-shaped groove 410 located at the periphery of the first grooves 408, one end of the first grooves 408 is in communication with the first arc-shaped groove 409, the first arc-shaped groove 409 is in communication with the first gas inlet channel 402-1, and the first gas inlet channel 402-1 is connected to an external first gas source 501 (as shown in FIG. 1). Figure 1 As shown, the other end of the first grooves 408 is in communication with the second arc-shaped groove 410, the second arc-shaped groove 410 is in communication with the first gas exhaust channel 403-1, and the first gas exhaust channel 403-1 is connected to an external gas exhaust device 6 (as shown in FIG. 1). Figure 1 As shown, the first grooves 408 and the lower surface of the cover plate 405 form a first gas flow channel, the first arc-shaped groove 409 and the lower surface of the cover plate 405 form a first inlet diffusion zone, and the second arc-shaped groove 410 and the lower surface of the cover plate 405 form a first outlet diffusion zone. Similarly, as shown in FIGS. 4 and 5, Figure 4 and Figure 6 As shown, the upper surface of the second gas diffusion plate 407 is provided with a plurality of second grooves 411, and a third arc-shaped groove 412 and a fourth arc-shaped groove 413 located at the periphery of the second grooves 411, one end of the second grooves 411 is in communication with the third arc-shaped groove 412, the third arc-shaped groove 412 is in communication with the second gas inlet channel 402-2, and the second gas inlet channel 402-2 is connected to an external second gas source 502 (as shown in FIG. 1). Figure 1 As shown, the other end of the second grooves 411 is in communication with the fourth arc-shaped groove 413, the fourth arc-shaped groove 413 is in communication with the second gas exhaust channel 403-2, and the second gas exhaust channel 403-2 is connected to an external gas exhaust device 6 (as shown in FIG. 1). Figure 1 As shown, the second grooves 411 and the lower surface of the first gas diffusion plate 406 form a second gas flow channel, the third arc-shaped groove 412 and the lower surface of the first gas diffusion plate 406 form a second inlet diffusion zone, and the fourth arc-shaped groove 413 and the lower surface of the first gas diffusion plate 406 form a second outlet diffusion zone. Accordingly, as shown in FIGS. 4 and 5, Figure 3 and Figure 4As shown, the gas spray assembly 404 includes a plurality of first gas spray channels 404-1 and a plurality of second gas spray channels 404-2. One end of the first gas spray channel 404-1 is connected to the first groove 408, and the other end extends to the lower surface of the second gas diffuser plate 407, for sending the reaction gas from the first gas distribution channel into the reaction chamber 1. One end of the second gas spray channel 404-2 is connected to the second groove 411, and the other end extends to the lower surface of the second gas diffuser plate 407, for sending the reaction gas from the second gas distribution channel into the reaction chamber 1.

[0050] In this embodiment, on the top view of the first gas diffuser plate 406, the first groove 408 is avoided from being set into a shape with a large curvature. The first groove 408 can be set into an arc shape with a small angle, or a bent line shape with an obtuse included angle. Preferably, the first groove 408 is set as follows: Figure 5 The straight-line configuration shown, with each first airflow channel formed by the first groove 408 arranged parallel to each other, ensures that the gas flow direction in all first airflow channels is the same. The reactant gas entering the first inlet diffusion zone formed by the first arc-shaped groove 409 from the first inlet channel 402-1 can quickly reach the first outlet diffusion zone formed by the second arc-shaped groove 410 through the first airflow channel and exit from the first extraction channel 403-1. This reduces the bending angle of the first airflow channel, increasing the speed at which reactant gas is extracted from the first gas distribution channel and preventing eddies from forming within the gas channel, facilitating rapid gas removal and improving process efficiency. Figure 4 As shown, setting the cross-section of the first groove 408 to be rectangular or V-shaped helps to increase the flow rate of the reactant gas in the first gas flow channel formed by the first groove 408, avoids reactant gas residue in the first groove 408, and facilitates rapid exhaust of gas from the gas channel, further improving process efficiency. Similarly, on the top view plane of the second gas diffuser plate 407, i.e. Figure 5 In the view direction, the second groove 411 is also configured as an arc shape with a small angle, or a bent line shape with an obtuse included angle. Preferably, the second groove 411 is configured as follows: Figure 6 The straight line shown is provided, and each first airflow channel formed by the second groove 411 is arranged parallel to each other, and the cross-section of the second groove 411 is rectangular or V-shaped.

[0051] To ensure that the airflow of each first airflow channel formed by the first groove 408 is the same, for first airflow channels of different lengths, the airflow can be balanced by adjusting the cross-sectional area of ​​the first airflow channels. For example, the depth or width of the shorter first groove 408 can be set to be deeper or wider. This ensures that the reactant gas entering the first gas distribution channel from the first inlet channel 402-1 can be evenly distributed to each first airflow channel, thereby ensuring that the reactant gas in the first gas distribution channel can be evenly distributed to the surface of the substrate 3 in the reaction chamber 1 through the first gas spray channel 404-1, ensuring the uniformity of the substrate process and guaranteeing product yield. By connecting the first arc-shaped groove 409 and the second arc-shaped groove 410 to form a complete annular groove, the first inlet diffusion area and the first outlet diffusion area are connected to form a complete annular region, which further promotes the uniform diffusion of the reactant gas entering the first gas distribution channel and evenly distributes it to each first airflow channel, thereby ensuring uniform entry into the reaction chamber 1. Similarly, the airflow volume of each second airflow channel formed by the second groove 411 is the same, and the third arc groove 412 and the fourth arc groove 413 are also connected to each other to form a complete ring.

[0052] like Figure 4 As shown, the depth of the first groove 408 is less than the thickness of the first gas diffuser plate 406 to prevent the first groove 408 from penetrating the first gas diffuser plate 406, thereby preventing leakage of the reactive gas flowing in the first groove 408. Similarly, the depth of the second groove 411 is less than the thickness of the second gas diffuser plate 407 to prevent the second groove 411 from penetrating the second gas diffuser plate 407, thereby preventing leakage of the reactive gas flowing in the second groove 411. Furthermore, a first sealing component 414 is provided between the lower surface of the cover plate 405 and the upper surface of the first gas diffuser plate 406, and a second sealing component 415 is provided between the lower surface of the first gas diffuser plate 406 and the upper surface of the second gas diffuser plate 407. The first sealing component 414 and the second sealing component 415 further ensure the sealing performance of the first groove 408 and the second groove 411, preventing leakage and mixing of the reactive gases flowing in the first groove 408 and the second groove 411, and ensuring reliable physical isolation between different reactive gases in the gas distribution plate 401.

[0053] The technical scheme of the present application effectively improves the flow speed of the reaction gas in each gas distribution channel of the gas distribution plate when the reaction gas is extracted, avoids vortex flow of the gas in the gas channel, is beneficial to rapid exhaust of the gas from the gas channel, improves the process efficiency, avoids generation of particulate matters due to residual reaction gas in the gas channel, ensures reliable physical isolation between different gas distribution channels, prevents the reaction gas from being mixed in advance to generate particulate matters before entering the reaction chamber, and improves the product yield.

[0054] In another embodiment of the present application, as shown in Figures 7-10 The gas distribution plate 401 comprises a plurality of spaced block gratings, the upper surface of the block grating 416 is covered with a top cover 417, the lower surface of the block grating 416 is in contact with the gas spraying assembly 404, the two ends of the block grating 416 are respectively provided with a first gas separation plate 418 and a second gas separation plate 419, the top surface of the first gas separation plate 418 and the second gas separation plate 409 is lower than the top surface of the block grating 416, and the bottom surface of the first gas separation plate 418 and the second gas separation plate 409 is higher than the bottom surface of the third groove 421.

[0055] As shown in Figures 8-10 The gap 420 between adjacent block gratings 416 forms a first gas flow channel in the first gas distribution channel, and the lower surface of the block grating 416 has a third groove 421, which forms a second gas flow channel in the second gas distribution channel. The first gas flow channel is formed between adjacent block gratings 416, and the second gas flow channel is formed on the lower surface of each block grating 416, so that reliable physical isolation is achieved between the first gas flow channel and the second gas flow channel.

[0056] The block grating 416 is generally provided in the form of a long strip, so the gap 420 between adjacent block gratings 416 is also in the form of a long strip. Similarly, the third groove 421 on the lower surface of the block grating 416 is also generally provided in the form of a long strip, and the third groove 421 is arranged in parallel with the block grating 416 in the length direction. By arranging a plurality of block gratings 416 in parallel with each other, the first gas flow channels formed by the gaps 420 are also parallel to each other, and the second gas flow channels formed by the third grooves 421 are also parallel to each other, so as to ensure that the flow directions of the gases in all the first gas flow channels are consistent, and the flow directions of the gases in all the second gas flow channels are also consistent, thereby improving the flow speed of the gases in the first gas flow channels and the second gas flow channels, avoiding vortex flow of the gases in the gas channels, being beneficial to rapid exhaust of the gases from the gas channels, and improving the process efficiency.

[0057] To ensure that the airflow rate of each first airflow channel formed by the gap 420 between adjacent blocky grids 416 is the same, it is also necessary to ensure that the airflow rate of each second airflow channel formed by the third groove 421 is the same. For airflow channels of different lengths, the airflow rate can be balanced by adjusting the cross-sectional area of ​​the airflow channels. For example, the width of the shorter gap 420 can be set wider, and the depth or width of the shorter third groove 421 can be set deeper or wider. This ensures that the reactive gas can be evenly distributed to each first airflow channel and each second airflow channel, thereby ensuring that the reactive gas can be evenly distributed to the surface of the substrate 3 in the reaction chamber 1 through the gas spray assembly 404, ensuring the uniformity of the substrate process and guaranteeing product yield.

[0058] like Figure 11 As shown, a first inlet diffusion area is formed between the upper surface of the first gas separator 418 and the top cover 417, and a first outlet diffusion area is formed between the upper surface of the second gas separator 419 and the top cover 417. Both the first inlet diffusion area and the first outlet diffusion area are connected to the gap 420 between the block-shaped grid 416, that is, both the first inlet diffusion area and the first outlet diffusion area are connected to the first airflow channel. A second inlet diffusion area is formed between the lower surface of the first gas separator 418 and the gas spray assembly 404, and a second outlet diffusion area is formed between the lower surface of the second gas separator 419 and the gas spray assembly 404. Both the second inlet diffusion area and the second outlet diffusion area are connected to the third groove 421, that is, both the second inlet diffusion area and the second outlet diffusion area are connected to the second airflow channel. The first inlet diffusion area and the second inlet diffusion area are formed on the upper and lower surfaces of the first gas separator 418, respectively, ensuring reliable physical isolation between the first inlet diffusion area and the second inlet diffusion area. Similarly, the first outlet diffusion zone and the second outlet diffusion zone are formed on the upper and lower surfaces of the second gas separator 419, respectively, ensuring reliable physical isolation between the first outlet diffusion zone and the second outlet diffusion zone.

[0059] like Figure 7 and Figure 11As shown, the gas inlet module 402 comprises at least one concentric gas inlet port 4021, which comprises a concentrically arranged gas inlet inner tube 422 and a gas inlet outer tube 423. The concentric arrangement can save space. The gas inlet inner tube 422 is connected to the first gas separation plate 418. The inner space of the gas inlet inner tube 422 forms the first gas inlet channel 402-1. One end of the first gas inlet channel 402-1 is in communication with the first inlet diffusion zone on the upper surface of the first gas separation plate 418. The other end of the first gas inlet channel 402-1 is connected to an external first gas source 501 (as shown). Figure 1 As shown, the gas inlet inner tube 422 and the gas inlet outer tube 423 form the second gas inlet channel 402-2. One end of the second gas inlet channel 402-2 is in communication with the second inlet diffusion zone on the lower surface of the first gas separation plate 418. The other end of the second gas inlet channel 402-2 is connected to an external second gas source 502 (as shown). Figure 1

[0060] The gas extraction module 403 comprises at least one concentric gas extraction port 4031, which comprises a concentrically arranged gas extraction inner tube 424 and a gas extraction outer tube 425. The gas extraction inner tube 424 is connected to the second gas separation plate 419. The inner space of the gas extraction inner tube 424 forms the first gas extraction channel 403-1. One end of the first gas extraction channel 403-1 is in communication with the first outlet diffusion zone on the upper surface of the second gas separation plate 419. The other end of the first gas extraction channel 403-1 is connected to an external gas extraction device 6 (as shown). Figure 1 As shown, the gas extraction inner tube 424 and the gas extraction outer tube 425 form the second gas extraction channel 403-2. The second gas extraction channel 403-2 is in communication with the second outlet diffusion zone on the lower surface of the second gas separation plate 419. The other end of the second gas extraction channel 403-2 is connected to an external gas extraction device 6 (as shown). Figure 1

[0061] The gas spraying assembly currently in use generally needs to process many gas outlet holes on the assembly. The processing procedure is complex, and the holes are prone to be blocked. If the holes are blocked in the semiconductor process, the uniformity of the sprayed gas will be affected. Figure 8 and Figure 11 ​​As shown, in the embodiment, the gas spraying assembly 404 adopts a porous material plate 404 which is made of powder sintering, the inside structure of the porous material plate is like sponge with many small channels and micro-holes which are evenly distributed on the surface, and thus each first gas flow channel formed by the gap 420 between the adjacent block gratings 416 and each second gas flow channel formed by the third groove 421 are communicated with the micro-holes on the porous material plate 404, and the reaction gas from the first gas flow channel and the second gas flow channel is sent into the reaction cavity 1 through the micro-holes on the porous material plate 404. In the embodiment, the porous material plate is used instead of machining gas holes, which saves the complex machining process, and since the porous material plate is full of micro-holes, even if some micro-holes are blocked, the overall uniformity will not be affected, which well ensures the uniformity of gas distribution, thereby ensuring the uniformity of the substrate process and the product yield.

[0062] The present application effectively improves the flow speed of the reaction gas in each gas distribution channel of the gas distribution plate, avoids vortex flow of the gas in the gas channel, is beneficial to rapid exhaust of the gas from the gas channel, improves the process efficiency, avoids generation of particulate matters due to residual reaction gas in the gas channel, ensures reliable physical isolation between different gas distribution channels, prevents the reaction gas from being mixed in advance to generate particulate matters before entering the reaction cavity, ensures uniform diffusion of the reaction gas to the substrate surface in the reaction cavity, ensures the uniformity of the substrate process, and improves the product yield.

[0063] It should be noted that in the embodiments of the present application, the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the embodiments, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second", "third" are only for the purpose of description, and cannot be understood as indicating or implying relative importance.

[0064] In this application, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting", "fixing" and the like should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integral; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0065] The content of the present application has been described in detail through the above preferred embodiments, but it should be recognized that the above description should not be considered as a limitation of the present application. After reading the above content, various modifications and alternatives of the present application will be apparent to those skilled in the art. Therefore, the protection scope of the present application should be defined by the appended claims.

Claims

1. A gas distribution device disposed within the reaction chamber of a semiconductor processing apparatus, characterized in that, The gas distribution device includes: A gas distribution plate has a first gas distribution channel and a second gas distribution channel that are isolated from each other. The first gas distribution channel includes a first inlet diffusion area, a plurality of first airflow channels, and a first outlet diffusion area. Each first airflow channel includes an inlet end and an outlet end. The inlet end of the plurality of first airflow channels is connected to the first inlet diffusion area, and the outlet end of the plurality of first airflow channels is connected to the first outlet diffusion area. The plurality of first airflow channels are parallel to each other. The second gas distribution channel includes a second inlet diffusion area, a plurality of second airflow channels, and a second outlet diffusion area. Each second airflow channel includes an inlet end and an outlet end. The inlet end of the plurality of second airflow channels is connected to the second inlet diffusion area, and the outlet end of the plurality of second airflow channels is connected to the second outlet diffusion area. The plurality of second airflow channels are parallel to each other. An air intake module includes at least one first air intake channel and at least one second air intake channel, wherein the first air intake channel is connected to the first inlet diffusion region and the second air intake channel is connected to the second inlet diffusion region, and the air intake module is used to deliver the reaction gas into the gas distribution plate. A gas extraction module includes at least one first gas extraction channel and at least one second gas extraction channel, wherein the first gas extraction channel is connected to the first outlet diffusion area and the second gas extraction channel is connected to the second outlet diffusion area, and the gas extraction module is used to discharge the reaction gas in the gas distribution plate. A gas spraying assembly, which is connected to the first gas distribution channel and the second gas distribution channel, is used to deliver the reaction gas into the reaction chamber.

2. The gas distribution device as described in claim 1, characterized in that, The ventilation volume of each of the first airflow channels is the same, and the ventilation volume of each of the second airflow channels is the same.

3. The gas distribution device as described in claim 2, characterized in that, The gas distribution plate includes a cover plate, a first gas diffuser plate, and a second gas diffuser plate arranged in layers; The upper surface of the first gas diffuser plate is provided with a plurality of first grooves, and a first arc groove and a second arc groove located around the first groove. The first arc groove is connected to one end of the first groove, and the second arc groove is connected to the other end of the first groove. The first groove and the lower surface of the cover plate form the first airflow channel. The first arc groove and the lower surface of the cover plate form the first inlet diffusion area. The second arc groove and the lower surface of the cover plate form the first outlet diffusion area. The upper surface of the second gas diffuser plate is provided with a plurality of second grooves, as well as a third arc-shaped groove and a fourth arc-shaped groove located around the second groove. The second groove and the lower surface of the first gas diffuser plate form the second airflow channel. The third arc-shaped groove and the lower surface of the first gas diffuser plate form the second inlet diffusion area. The fourth arc-shaped groove and the lower surface of the first gas diffuser plate form the second outlet diffusion area.

4. The gas distribution device as described in claim 3, characterized in that, The first arc-shaped groove and the second arc-shaped groove are interconnected to form a complete ring; the third arc-shaped groove and the fourth arc-shaped groove are interconnected to form a complete ring.

5. The gas distribution device as described in claim 4, characterized in that, The depth of the first groove is less than the thickness of the first gas diffuser plate, and the depth of the second groove is less than the thickness of the second gas diffuser plate.

6. The gas distribution device as described in claim 4, characterized in that, The first groove has a rectangular or V-shaped cross-section, and the second groove has a rectangular or V-shaped cross-section.

7. The gas distribution device as described in claim 3, characterized in that, The gas spray assembly includes multiple first gas spray channels and multiple second gas spray channels; One end of the first gas spray channel is connected to the first airflow channel, and the other end is located on the lower surface of the second gas diffuser plate; One end of the second gas spray channel is connected to the second airflow channel, and the other end is located on the lower surface of the second gas diffuser plate.

8. The gas distribution device as described in claim 3, characterized in that, The gas distribution plate includes a first sealing component and a second sealing component. The first sealing component is located between the lower surface of the cover plate and the upper surface of the first gas diffuser plate, and the second sealing component is located between the lower surface of the first gas diffuser plate and the upper surface of the second gas diffuser plate.

9. The gas distribution device as described in claim 2, characterized in that, The gas distribution plate includes a plurality of spaced-apart block-shaped grids, the upper surface of which is covered with a top cover, and the lower surface of which is in contact with the gas spray assembly; the gap between adjacent block-shaped grids forms a first airflow channel in the first gas distribution channel; the lower surface of the block-shaped grids has a third groove, which forms a second airflow channel in the second gas distribution channel; The gas distribution plate further includes a first gas separator plate and a second gas separator plate, which are respectively disposed at both ends of the block-shaped grid. A first inlet diffusion area is formed between the upper surface of the first gas separator plate and the top cover, and the gap between the first inlet diffusion area and the block-shaped grid is connected. A second inlet diffusion area is formed between the lower surface of the first gas separator plate and the gas spray assembly, and the second inlet diffusion area is connected to the third groove. A first outlet diffusion area is formed between the upper surface of the second gas separator plate and the top cover, and the gap between the first outlet diffusion area and the block-shaped grid is connected. A second outlet diffusion area is formed between the lower surface of the second gas separator plate and the gas spray assembly, and the second outlet diffusion area is connected to the third groove.

10. The gas distribution device as claimed in claim 9, characterized in that, The air intake module includes at least one concentric air intake port, each concentrically arranged with an inner air intake pipe and an outer air intake pipe. The inner air intake pipe is connected to the first gas partition plate, and the internal space of the inner air intake pipe forms the first air intake channel. A second air intake channel is formed between the inner air intake pipe and the outer air intake pipe. The air extraction module includes at least one concentric air extraction port, each concentrically arranged with an inner air extraction pipe and an outer air extraction pipe. The inner air extraction pipe is connected to the second gas partition plate, and the internal space of the inner air extraction pipe forms the first air extraction channel. A second air extraction channel is formed between the inner air extraction pipe and the outer air extraction pipe.

11. The gas distribution device as claimed in claim 9, characterized in that, The gas spraying assembly includes a porous material plate with multiple micropores that are connected to the first airflow channel and the second airflow channel.

12. A semiconductor processing apparatus, characterized in that, Include: reaction chamber; The gas distribution device as described in any one of claims 1-11, wherein the gas distribution device is disposed at the top of the reaction chamber; A base, which is disposed within the reaction chamber, is used to support the substrate.

13. The semiconductor processing apparatus as claimed in claim 12, characterized in that, The first air intake channel is connected to an external first gas source, and the second air intake channel is connected to an external second gas source.

14. The semiconductor processing apparatus as claimed in claim 12, characterized in that, The first and second air extraction channels are connected to an external air extraction device.

15. The semiconductor processing apparatus as claimed in claim 12, characterized in that, The semiconductor processing equipment is a deposition equipment or an etching equipment.

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