Process chambers and semiconductor processing equipment

Abstract

The present application provides a kind of process chamber, comprising: cavity, the isolation component and radio frequency coil of being arranged in cavity, radio frequency coil is used to stimulate the gas of generation cavity to generate plasma, the two ends of radio frequency coil include lead-out section and lead-in section, lead-out section and lead-in section are through cavity and stretch to outside cavity;First sealing component, be connected to lead-out section and lead-in section and cavity, for sealing the position of lead-out section and lead-in section through cavity;Second sealing component, be connected to lead-out section and lead-in section, for sealing the junction between first sealing and lead-out section and lead-in section.It is not only sealed to the position of lead-out section and lead-in section through cavity by the first sealing component, also sealed the junction between first sealing and lead-out section and lead-in section by the second sealing component, double sealing, improve the sealing at radio frequency coil.The present application also provides a kind of semiconductor process equipment.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more specifically, to a process chamber and semiconductor process equipment. Background Technology

[0002] Ion beam etching (IBE) is a dry etching technique with excellent anisotropic etching characteristics. Its main features include the ability to individually control ion energy and density, and the mechanical adjustment of the etching angle. The main process of IBE involves ionizing gas into plasma in a chamber under a pressure of less than 1 mTorr. This plasma is then accelerated by a grid to become a uniformly collimated ion beam with a certain energy, which bombards the substrate surface for etching. Under high vacuum conditions, the uniform, parallel ion beam drawn from the grid can etch all materials, including various metals and dielectrics.

[0003] To achieve the functionality of an IBE machine, its RF coil needs to excite plasma more efficiently. The ceramic cylinder inside the chamber used for the RF isolation coil and process gas needs to have a thinner wall. However, a thinner ceramic cylinder has reduced strength and cannot withstand a large internal and external pressure difference. Therefore, it cannot be installed in the same way as a conventional etching machine, such as being placed in an atmospheric environment on the outside and a vacuum environment on the inside. So the coil must be placed close to the ceramic cylinder in the chamber and in a vacuum environment. The following are the usage conditions that the coil needs to meet: (1) When working in a high vacuum environment (<1mTorr), the RF coil and the chamber need to be properly sealed; (2) The area around the RF coil needs to be kept clean to prevent impurities and process gases from causing arcing when the RF coil is energized, which would damage the chamber and components; (3) The RF coil is hollow and coolant flows inside for cooling. The chamber is closed and in a vacuum environment, so it is impossible to use an external heat dissipation device for cooling. When the machine is turned on, the temperature is as high as 100-200℃. The inability to dissipate heat well and the accumulation of heat will cause damage to the chamber and its components. At the same time, the water cooling heat dissipation inside the chamber also needs to consider its sealing and safety; (4) Ensure that the RF coil is insulated from other components around the chamber to prevent the RF coil from short-circuiting when a high power current is applied, which could cause safety problems.

[0004] To address the aforementioned requirements, current IBE (In-Earth Beam) machines on the market employ some conventional coil design solutions, where the coil is sealed in a vacuum environment and water-cooled and energized. Regarding coil sealing, existing solutions typically use rubber sealing rings or compression fittings to seal the coil's shaft end. However, these methods are insufficient because they only seal the surface of the coil's shaft end. Since RF coils are made of copper, the large pressure difference at the seal point can cause deformation. Sealing rings and compression fittings are ineffective at sealing gaps created by the deformation of the circular, straight tube RF coil shaft end, leading to air and liquid leaks. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber and semiconductor process equipment that can solve the technical problem of insufficient sealing capability at the radio frequency coil in the high vacuum environment of the process chamber.

[0006] To achieve the objectives of this invention, a process chamber is provided, comprising: a cavity; an isolation assembly disposed within the cavity, the isolation assembly dividing the cavity into a non-communicating generating cavity and a vacuum cavity, the vacuum cavity being located outside the generating cavity; a radio frequency coil disposed within the vacuum cavity, the radio frequency coil being used to excite gas in the generating cavity to generate plasma, the two ends of the radio frequency coil including an exit section and an entry section, the exit section and the entry section penetrating the cavity and extending outside the cavity; a first sealing assembly connected to the exit section and the entry section and the cavity, for sealing the positions where the exit section and the entry section penetrate the cavity; and a second sealing assembly connected to the exit section and the entry section, for sealing the connection between the first sealing member and the exit section and the entry section.

[0007] Furthermore, the first sealing assembly includes a first sealing element, two second sealing elements, and two insulating elements; the first sealing element is sealed to the cavity and has two mounting holes for the lead-out section and the lead-in section to pass through; the two second sealing elements are respectively sleeved on the lead-out section and the lead-in section, and respectively sealingly engage with the lead-out section and the lead-in section; the two second sealing elements are respectively inserted into the two mounting holes, and an insulating element is provided between the outer wall surface of each second sealing element and the inner wall surface of the inserted mounting hole, the second sealing element and the inserted insulating element are sealingly engaged, and the insulating element and the inserted mounting hole are sealingly engaged.

[0008] Furthermore, the first and second sealing elements are made of metal. The first sealing element is disposed outside the cavity, and the connection surface between the first sealing element and the cavity is provided with a first serrated contact surface, while the connection surface between the cavity and the first sealing element is provided with a second serrated contact surface. The first sealing assembly also includes a first metal gasket, whose opposite sides respectively contact the first serrated contact surface and the second serrated contact surface.

[0009] Furthermore, the second sealing assembly includes: two third seals, respectively fitted onto the portions of the lead-out section and the lead-in section located within the vacuum chamber, wherein the third seals are in a sealing fit with the lead-out section and the third seals are in a sealing fit with the lead-in section; wherein the second seal fitted onto the lead-out section is in a sealing connection with the third seals, and the second seal fitted onto the lead-out section is in a sealing connection with the third seals.

[0010] Furthermore, each second seal includes a second tube body and a second flange connected together. The second tube body is provided with a through hole that seals with the lead-out section or the lead-in section, and the second flange is provided at one end of the second tube body facing the third seal. Each third seal includes a third tube body and a third flange connected together. The third tube body is provided with a through hole that seals with the lead-out section or the lead-in section, and the third flange is provided at one end of the third tube body facing the second seal. The second flange and the third flange are sealed together by fasteners.

[0011] Furthermore, the second and third seals are made of metal. Each second seal has a third serrated contact surface on its end face facing the sealingly connected third seal, and each third seal has a fourth serrated contact surface on its end face facing the sealingly connected second seal. The second sealing assembly also includes two second metal gaskets. One of the second metal gaskets has its two opposite sides in contact with the third serrated contact surface and the fourth serrated contact surface of the second seal sleeved on the lead-out section, respectively. The other second metal gasket has its two opposite sides in contact with the third serrated contact surface and the fourth serrated contact surface of the second seal sleeved on the lead-in section, respectively.

[0012] Furthermore, the axial length of the insulating element is greater than the axial length of the first sealing element, and the axial length of the second sealing element is greater than the axial length of the insulating element.

[0013] Furthermore, the lead-in section, lead-out section, and radio frequency coil are hollow metal tubular structures.

[0014] Furthermore, it also includes: a reaction chamber, which is connected to the generating chamber, through which gas is introduced to generate plasma which enters the generating chamber, and the reaction chamber is used to perform process treatment in a plasma atmosphere.

[0015] Furthermore, it also includes: at least one vacuum pumping component, which is located outside the cavity and is used to evacuate the vacuum cavity; and a measuring component, which is used to measure the vacuum level of the vacuum cavity.

[0016] The present invention also provides a semiconductor process apparatus, including the process chamber described above.

[0017] The present invention has the following beneficial effects:

[0018] This application not only uses a first sealing assembly to seal the positions where the lead-out section and the lead-in section penetrate the cavity, but also uses a second sealing assembly to seal the connection between the first sealing element and the lead-out section and the lead-in section. This double sealing means that even if a gap is created at the seal of the first sealing assembly due to the deformation of the RF coil, the second sealing assembly can still provide a good seal at the connection between the first sealing assembly and the lead-out section and the lead-in section of the RF coil, thus improving the sealing performance at the RF coil. Therefore, the process chamber sealing performance of this invention is more reliable and safer.

[0019] Other objects and features of the present invention will become clear from reading the specification, claims and drawings of this application. Attached Figure Description

[0020] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments taken in conjunction with the following drawings, in which:

[0021] Figure 1 This is a structural schematic diagram of the process chamber according to an embodiment of the present invention.

[0022] Figure 2 This is a partial structural schematic diagram of the process chamber according to an embodiment of the present invention.

[0023] Figure 3 This is an exploded view of a portion of the structure of the process chamber according to an embodiment of the present invention.

[0024] Figure 4 yes Figure 3 A sectional view.

[0025] Explanation of key component symbols:

[0026] 10. Semiconductor process equipment;

[0027] 100. Cavity; 110. Top cover; 120. First body; 130. Second body;

[0028] 200. Isolation component; 210. Insulating component; 220. Insulating cylinder;

[0029] 300. Radio frequency coil; 310. Lead-out section; 320. Lead-in section;

[0030] 400, First sealing assembly; 410, First seal; 420, Second seal; 421, Second tube body; 422, Second flange; 430, Insulating component; 440, Fastener;

[0031] 500. Second sealing assembly; 510. Third seal; 511. Third tube body; 512. Third flange;

[0032] 610. First metal washer; 620. Second metal washer; 630. Third sealing ring;

[0033] 710. Vacuum pumping assembly; 720. Measuring assembly;

[0034] 810. Nozzle; 820. Diffuser;

[0035] 910. Grid mesh; 911. Grid mesh fastener; 920. Connecting post; 930. Coil fastener; 940. Shielding cover. Detailed Implementation

[0036] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0037] In related technologies, to achieve a seal between the RF coil and the chamber, a sealing ring is typically placed at the connection point where the coil passes through the chamber. In other words, the sealing ring is fitted onto the RF coil, and there is an interference fit between the sealing ring and the connection hole on the chamber (where the coil is located). The inventors of this invention discovered through research that the large internal and external pressure difference at the sealing point of the RF coil easily causes deformation. The sealing ring is not effective in sealing gaps created by the deformation at the RF coil shaft end, resulting in insufficient sealing capability at the RF coil in high vacuum environments.

[0038] To address the problems of the aforementioned related technologies, this invention proposes a process chamber. Figure 1 This is a structural schematic diagram of the process chamber according to an embodiment of the present invention. Figure 2 This is a partial structural schematic diagram of the process chamber according to an embodiment of the present invention. See also... Figure 1 and Figure 2 The process chamber includes a cavity 100, an isolation component 200, an RF coil 300, a first sealing component 400, and a second sealing component 500.

[0039] An isolation assembly 200 is disposed within the cavity 100. The isolation assembly 200 is used to divide the cavity 100 into a non-communicating reaction cavity and a vacuum cavity.

[0040] It should be noted that the process gas is introduced into the generating chamber, and the vacuum chamber is located outside the generating chamber to house the radio frequency coil 300. The radio frequency coil 300 is arranged around the generating chamber to excite the process gas in the generating chamber to generate plasma after being energized.

[0041] The radio frequency coil 300 is disposed in the vacuum cavity. The radio frequency coil 300 is used to excite the gas in the generating cavity to generate plasma. The two ends of the radio frequency coil 300 include an exit section 310 and an inlet section 320, which pass through the cavity 100 and extend to the outside of the cavity 100.

[0042] The first sealing assembly 400 is connected to the lead-out section 310, the lead-in section 320, and the cavity 100. The first sealing assembly 400 is used to seal the positions where the lead-out section 310 and the lead-in section 320 penetrate the cavity 100.

[0043] The second sealing assembly 500 is connected to the lead-out section 310 and the lead-in section 320. The second sealing assembly 500 is used to seal the connection between the first seal and the lead-out section 310 and the lead-in section 320.

[0044] Compared to related technologies that only seal the connection between the RF coil and the cavity, this embodiment not only uses the first sealing component 400 to seal the positions where the lead-out section 310 and the lead-in section 320 penetrate the cavity 100, but also creatively designs a second sealing component 500. Furthermore, considering that there is also a connection between the first sealing component 400 and the RF coil, and since the sealing at this point will affect the vacuum level of the vacuum chamber, this embodiment uses the second sealing component 500 to seal the connection between the first sealing component and the lead-out section 310 and the lead-in section 320, improving the sealing performance of the connection between the first sealing component 400 and the RF coil 300, and further improving the sealing performance of the vacuum chamber of the cavity 100 in a vacuum environment. By utilizing the dual sealing of the first sealing component 400 and the second sealing component 500, even if a gap is generated at the sealing point of the first sealing component 400 due to the deformation of the RF coil, the second sealing component 500 can also effectively seal the connection between the first sealing component 400 and the lead-out section 310 and lead-in section 320 of the RF coil 300, thereby improving the sealing performance of the cavity 100 at the RF coil 300. The process chamber sealing performance of this embodiment is more reliable and safer.

[0045] In some embodiments, the process chamber further includes a reaction chamber, a grid 910 located between the generating chamber and the reaction chamber, a connecting post 920 vertically disposed in the vacuum chamber, and a coil fixing member 930 for fixing the RF coil 300 in the vacuum chamber. The reaction chamber is located below the generating chamber and is connected to it. Plasma generated by gas entering the generating chamber enters the reaction chamber through the grid 910. A workpiece to be processed is placed inside the reaction chamber, which is used to perform corresponding processing on the workpiece in a plasma atmosphere. The grid 910 separates the generating chamber and the reaction chamber, and is fixed to the connecting post 920 by the grid fixing member 911. One end of the connecting post 920 is connected to the grid fixing member 911, and the coil fixing member 930 is disposed on the connecting post 920 to fix the RF coil 300 in the vacuum chamber. It is understood that the vacuum chamber may be provided with multiple coil fixing members 930 and connecting posts 920 to improve the stability of the RF coil 300.

[0046] Specifically, the grid fixing component 911 can be a ring-shaped stainless steel structure.

[0047] In some embodiments, the isolation assembly 200 includes an insulating member 210 and an insulating cylinder 220 disposed within the cavity 100. The insulating cylinder 220 is connected to the grid fixing member 911, and a third sealing ring 630 is provided at the connection between the insulating member 210 and the insulating cylinder 220. A third sealing ring 630 is also provided at the sealing point between the insulating cylinder 220 and the grid fixing member 911 to improve the sealing between the generating cavity and the vacuum cavity, prevent gas from the generating cavity from flowing into the vacuum cavity, and thus prevent gas from diffusing around the radio frequency coil 300.

[0048] Specifically, the insulating component 210 can be made of ceramic to improve insulation performance. The insulating cylinder 220 can also be made of ceramic to improve insulation performance.

[0049] The generating chamber is equipped with a nozzle 810 to introduce gas into the chamber. A third sealing ring 630 is provided at the connection between the nozzle 810 and the chamber body 100 to improve sealing. To allow the gas to approach the energized radio frequency coil 300 and better excite the gas to generate plasma, a diffuser 820 can be provided in the generating chamber. The diffuser 820 is arranged horizontally to diffuse the gas in all directions. The plasma is accelerated by the grid 910 and emitted onto the workpiece in the reaction chamber to perform etching or other processes. Since the process generates many byproducts and impurities, a shield 940 can be installed below the grid fixing member 911 to reduce impurities entering the vicinity of the radio frequency coil 300 and prevent arcing in the radio frequency coil 300.

[0050] Specifically, the diffuser 820 can be made of ceramic.

[0051] This embodiment not only uses the first sealing component 400 to seal the positions where the lead-out section 310 and the lead-in section 320 penetrate the cavity 100, but also uses the second sealing component 500 to seal the connection between the first sealing element and the lead-out section 310 and the lead-in section 320. This double sealing improves the sealing performance at the radio frequency coil 300.

[0052] Figure 3 This is an exploded view of a portion of the structure of the process chamber according to an embodiment of the present invention. Figure 4 yes Figure 3 A sectional view. See also Figure 2 , Figure 3 and Figure 4 The first sealing assembly 400 includes a first seal 410, two second seals 420 and two insulators 430.

[0053] The first seal 410 is sealed to the cavity 100, and the first seal 410 is provided with two mounting holes for the lead-out section 310 and the lead-in section 320 to pass through.

[0054] Two second seals 420 are respectively fitted over the lead-out section 310 and the lead-in section 320, and are respectively sealed to each other. For example, a sealing ring is provided between the inner wall surface of the second seal 420 and the outer surface of the lead-out section 310, and a sealing ring is provided between the inner wall surface of the second seal 420 and the outer surface of the lead-in section 320. Thus, the second seal 420 is sealed to the lead-out section 310 through the sealing ring, and the second seal 420 is sealed to the lead-in section 320 through the sealing ring. The sealing ring can be made of rubber or other materials capable of achieving a seal.

[0055] Two second seals 420 are respectively inserted into two mounting holes. An insulating element 430 is provided between the outer wall of each second seal 420 and the inner wall of the mounting hole through which it is inserted. The second seal 420 and the insulating element 430 are sealed together, and the insulating element 430 is sealed together with the mounting hole through which it is inserted.

[0056] It should be noted that the first sealing element 410, the two second sealing elements 420 and the two insulating elements 430 can be used as vacuum electrodes to transmit various electrical power, electrical signals, motion, fluid, light beams, etc. from the atmospheric end to the vacuum cavity through the cavity 100.

[0057] In some embodiments, the first seal 410 and the second seal 420 are made of metal. Specifically, the first seal 410 is made of stainless steel, the second seal 420 is made of stainless steel, and the insulator 430 is made of ceramic. Ceramic-metal encapsulation technology can be used to hermetically connect the metal first seal 410 and the second seal 420 with the ceramic insulator 430.

[0058] The metal material of the first sealing element 410 and the second sealing element 420 achieves a metal seal at the sealing connection. Compared with the rubber seal in the related technology, the metal seal in this embodiment has two outstanding advantages: 1) the outgassing is much less than that of rubber, and the metal seal is more reliable than the rubber seal used in the related technology; 2) the system and device sealed with the metal seal can be baked out at high temperature, thus improving the sealing performance compared with the rubber seal in the related technology and meeting the requirements of ultra-high vacuum.

[0059] The first sealing element 410 is disposed outside the cavity. The connecting surface between the first sealing element 410 and the cavity has a first serrated contact surface, and the connecting surface between the cavity 100 and the first sealing element 410 has a second serrated contact surface. The first sealing assembly 400 also includes a first metal washer 610. The two opposite sides of the first metal washer 610 contact the first serrated contact surface and the second serrated contact surface, respectively. The metal seal between the first sealing element 410 and the cavity 100 is achieved by pressing the first metal washer 610 through the serrated contact surfaces, which improves the sealing performance compared to rubber seals and ferrule seals.

[0060] In some embodiments, the first metal washer 610 is made of copper. For example, the first metal washer 610 can be a copper gasket.

[0061] The second sealing assembly 500 includes two third seals 510. The two third seals 510 are respectively fitted onto the portions of the lead-out section 310 and the lead-in section 320 located within the vacuum chamber. The third seals 510 are in a sealing fit with the lead-out section 310, and the third seals 510 are in a sealing fit with the lead-in section 320.

[0062] The second sealing element 420 and the third sealing element 510, which are fitted onto the lead-out section 310, are connected in a sealing manner to seal the connection between the lead-out section 310 and the cavity 100.

[0063] The second seal 420 and the third seal 510, which are fitted onto the inlet section 320, are connected in a sealing manner to seal the connection between the inlet section 320 and the cavity 100.

[0064] Each second seal 420 includes a second tube body 421 and a second flange 422 connected to each other. The second tube body 421 is provided with a through hole that seals with the lead-out section 310 or the lead-in section 320, and the second flange 422 is provided at one end of the second tube body 421 facing the third seal 510. Each third seal 510 includes a third tube body 511 and a third flange 512 connected to each other. The third tube body 511 is provided with a through hole that seals with the lead-out section 310 or the lead-in section 320, and the third flange 512 is provided at one end of the third tube body 511 facing the second seal 420. The second flange 422 and the third flange 512 are sealed together by a fastener 440.

[0065] In some embodiments, the fastener 440 may be a screw. That is, the second flange 422 and the third flange 512 are connected by a screw in a sealing manner. It is understood that the fastener 440 is also immediately applicable to other structures or connection methods that can achieve a fixed connection, and specific examples are not given here.

[0066] The second sealing assembly 500 also includes two second metal gaskets 620. The second seal 420 and the third seal 510 are made of metal. Each second seal 420 has a third serrated contact surface on its end face facing the sealingly connected third seal 510, and each third seal 510 has a fourth serrated contact surface on its end face facing the sealingly connected second seal 420. The two opposite sides of one of the second metal gaskets 620 contact the third serrated contact surface of the second seal 420 and the fourth serrated contact surface of the third seal 510, respectively, so that the second metal gasket 620 is compressed by the serrated contact surfaces of the second seal 420 and the third seal 510 to achieve a tight metal seal on the lead-out section 310. Compared to rubber seals in related technologies, the metal seal in this embodiment has two outstanding advantages: 1) it releases far less gas than rubber; 2) the systems and devices sealed with it can be baked out at high temperatures, thus improving the sealing performance compared to rubber seals and meeting the requirements of ultra-high vacuum.

[0067] The two opposite sides of the second metal gasket 620 contact the third serrated contact surface of the second seal 420 sleeved on the inlet section 320 and the fourth serrated contact surface of the inlet section 320, respectively, so that the second metal gasket 620 is squeezed by the serrated contact surfaces of the second seal 420 and the third seal 510 to achieve a tight metal seal in the inlet section 320, thereby improving the sealing performance.

[0068] In some embodiments, the second metal washer 620 may be made of copper. The second metal washer 620 may be a copper gasket.

[0069] In some embodiments, the second metal washer 620 is welded to the lead-out section 310. The second metal washer 620 is welded to the lead-in section 320.

[0070] The axial length of the insulating element 430 is greater than the axial length of the first sealing element 410, and the axial length of the second sealing element 420 is greater than the axial length of the insulating element 430.

[0071] In some embodiments, the inlet section 320 can be used to introduce cooling medium, and the outlet section 310 can be used to discharge cooling medium. Of course, the outlet section 310 can also be used to introduce cooling medium, and the inlet section 320 can also be used to discharge cooling medium.

[0072] The inlet section 320, the outlet section 310, and the radio frequency coil 300 are hollow metal tubular structures to facilitate the flow and introduction / exit of the cooling medium.

[0073] Specifically, the RF coil 300 is integrally formed. The lead-out section 310 and the lead-in section 320 can be straight tubes, respectively penetrating the cavity 100 and extending outside the cavity 100. The portions extending outside the cavity 100 can be directly or indirectly connected to a cooling source via cooling pipes. The cooling source provides a cooling medium, such as a cooling liquid or gas. The cooling medium provided by the cooling source can circulate within the RF coil 300 through the lead-out section 310 and the lead-in section 320 to cool the cavity 100, improving its operational safety.

[0074] The radio frequency coil 300 also includes a bent section located between the lead-out section 310 and the lead-in section 320, which is wound around the generating cavity to excite the gas in the generating cavity to generate plasma.

[0075] The semiconductor process equipment 10 includes the process chamber of the above embodiment.

[0076] In some embodiments, the cavity 100 includes an upper cover 110, a first body 120, and a second body 130 arranged sequentially in a vertical direction. The first body 120 and the upper cover 110 are sealed together to form a generating cavity and a vacuum cavity, and a third sealing ring 630 is provided at the connection between the first body 120 and the upper cover 110 to improve the sealing performance of the connection. The first body 120 and the second body 130 are sealed together to form a reaction cavity, and a third sealing ring 630 is provided at the connection between the first body 120 and the second body 130 to improve the sealing performance of the connection.

[0077] It should be noted that the workpiece is placed inside the reaction chamber. The workpiece is used to undergo the corresponding processing within the reaction chamber.

[0078] The process chamber also includes at least one vacuum pumping assembly 710 and a measuring assembly 720. The vacuum pumping assembly 710 is located outside the chamber 100. The vacuum pumping assembly 710 is used to evacuate the vacuum chamber to remove byproducts and gases from the chamber 100. The measuring assembly 720 is used to measure the vacuum level of the vacuum chamber.

[0079] The following is a detailed explanation, and it is not intended to impose any restrictions on what can be understood.

[0080] Before executing the corresponding process in the process chamber, the reaction chamber and vacuum chamber are first evacuated. Once the vacuum levels in both chambers reach preset values, the evacuation process in the vacuum chamber stops. To maintain a high overall vacuum, the reaction chamber is continuously evacuated. During process execution, when plasma is introduced into the reaction chamber and the process is performed, impurities and external gases may enter the vacuum chamber through the gap between the shield 940 and the inner wall of the chamber 100, causing a decrease in the vacuum level. Therefore, the vacuum chamber is evacuated to remove impurities and byproducts such as gases.

[0081] To prevent byproducts from flowing back into the vacuum chamber (as airflow tends to move from low to high vacuum), when the vacuum level in the vacuum chamber is lower than that in the reaction chamber, the evacuation process in the vacuum chamber is stopped. Meanwhile, the molecular pump in the reaction chamber increases its power to evacuate the vacuum, ensuring that the vacuum level in the reaction chamber is higher than that in the vacuum chamber. A vacuum gauge continuously monitors the vacuum level in the surrounding vacuum chambers, and the above steps are repeated in a closed loop to prevent byproducts from flowing into and depositing in the vacuum chamber, thus improving the cleanliness of the vacuum chamber and preventing arcing in the RF coil 300.

[0082] In the description of this invention, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, features defined as "first" and "second" may explicitly or implicitly include one or more of the stated features. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0083] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for communication; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0084] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "illustrative embodiment," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with an embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0085] It is understood that the above embodiments are merely exemplary implementations used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A process chamber, characterized in that, include: cavity; An isolation component is disposed within the cavity, the isolation component being used to divide the cavity into a non-communicating generating cavity and a vacuum cavity, the vacuum cavity being located outside the generating cavity; A radio frequency coil is disposed in the vacuum cavity. The radio frequency coil is used to excite the gas in the generating cavity to generate plasma. The two ends of the radio frequency coil include an outgoing section and an incoming section. The outgoing section and the incoming section pass through the cavity and extend to the outside of the cavity. A first sealing assembly is connected to the lead-out section, the inlet section, and the cavity, and is used to seal the positions where the lead-out section and the inlet section penetrate the cavity; A second sealing assembly, connected to the lead-out section and the inlet section, is used to seal the connection between the first sealing assembly and the lead-out section and the inlet section, thereby providing a double seal at the connection between the RF coil and the cavity; The first sealing assembly includes a second tube body and a second flange connected to each other. The second tube body is provided with a through hole that seals with the lead-out section or the lead-in section. The second flange is provided at one end of the second tube body facing the second sealing assembly. The second sealing assembly includes a third tube body and a third flange connected to each other. The third tube body is provided with a through hole that seals with the lead-out section or the lead-in section. The third flange is provided at one end of the third tube body facing the first sealing assembly, and the second flange is sealed to the third flange.

2. The process chamber according to claim 1, characterized in that, The first sealing assembly includes a first seal, two second seals, and two insulating elements; The first sealing element is sealed to the cavity, and the first sealing element is provided with two mounting holes for the lead-out section and the lead-in section to pass through; The two second seals are respectively fitted outside the lead-out section and the lead-in section, and respectively sealingly engage with the lead-out section and the lead-in section; Two second seals are respectively inserted into the two mounting holes. An insulating element is provided between the outer wall of each second seal and the inner wall of the mounting hole through which it is inserted. The second seal and the insulating element are sealed together, and the insulating element is sealed together with the mounting hole through which it is inserted.

3. The process chamber according to claim 2, characterized in that, The first seal and the second seal are made of metal. The first seal is disposed outside the cavity. The connection surface between the first seal and the cavity is provided with a first serrated contact surface. The connection surface between the cavity and the first seal is provided with a second serrated contact surface. The first sealing assembly also includes a first metal gasket, the two opposite sides of which are in contact with the first serrated contact surface and the second serrated contact surface, respectively.

4. The process chamber according to claim 2, characterized in that, The second sealing assembly includes: Two third seals are respectively fitted onto the portions of the lead-out section and the lead-in section located within the vacuum chamber. The third seals are in a sealing fit with the lead-out section and with the lead-in section. The second sealing element sleeved on the lead-out section is sealed to the third sealing element, and the second sealing element sleeved on the lead-in section is sealed to the third sealing element.

5. The process chamber according to claim 4, characterized in that, Each of the second seals includes a connected second tube body and a second flange, the second flange being disposed at one end of the second tube body facing the third seal; Each of the third seals includes a third tube body and a third flange connected together, the third flange being disposed at one end of the third tube body facing the second seal; The second flange and the third flange are sealed together by fasteners.

6. The process chamber according to claim 4, characterized in that, The second seal and the third seal are made of metal. Each second seal has a third serrated contact surface on its end face facing the third seal to which it is sealed, and each third seal has a fourth serrated contact surface on its end face facing the second seal to which it is sealed. The second sealing assembly further includes two second metal gaskets, one of which has two opposing sides that contact the third serrated contact surface and the fourth serrated contact surface of the second seal sleeved on the lead-out section, respectively. The two opposite sides of the other second metal gasket are in contact with the third serrated contact surface of the second seal sleeved on the inlet section and the fourth serrated contact surface of the inlet section, respectively.

7. The process chamber according to claim 2, characterized in that, The axial length of the insulating element is greater than the axial length of the first sealing element, and the axial length of the second sealing element is greater than the axial length of the insulating element.

8. The process chamber according to claim 2, characterized in that, The inlet section, the outlet section, and the radio frequency coil are hollow metal tubular structures.

9. The process chamber according to claim 1, characterized in that, Also includes: The reaction chamber is connected to the generating chamber. The plasma generated by the gas introduced into the generating chamber enters the reaction chamber, and the reaction chamber is used to perform process treatment in the atmosphere of the plasma.

10. The process chamber according to claim 1, characterized in that, Also includes: At least one vacuum pumping component is disposed outside the cavity and is used to perform vacuum pumping on the vacuum cavity; A measuring component for measuring the vacuum level of the vacuum chamber.

11. A semiconductor process apparatus, characterized in that, Includes the process chamber as described in any one of claims 1 to 10.

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