Adjusting member, substrate processing apparatus, and adjusting method

Abstract

The invention provides an adjusting member, a substrate processing apparatus, and an adjusting method. Provided is a means for easily adjusting the distance between two structural members. An adjustment member for adjusting the interval between two structural members, the adjustment member having an annular main body having a first center, the main body having: an inner peripheral surface having a plurality of inner peripheral recesses formed side-by-side in the circumferential direction, each of the plurality of inner peripheral recesses being configured from a curved line, and an outer peripheral surface having a plurality of outer peripheral recesses formed side-by-side in the circumferential direction, each of the plurality of inner peripheral recesses being configured from a curved line; an outer peripheral surface surrounding the inner peripheral surface from the outside; and a plurality of interval adjusting parts having a plurality of main body widths located between the outer peripheral surface corresponding to each of the plurality of inner peripheral recesses and each of the plurality of inner peripheral recesses, the plurality of main body widths having different widths from each other.

Description

Technical Field

[0001] The present disclosure relates to an adjustment member, a substrate processing apparatus, and an adjustment method. Background Art

[0002] For example, Patent Document 1 proposes the following solution: In a substrate processing device, a gap of a specified width is set between the side of a mounting table on which the substrate is mounted and the side of a ring member arranged around the mounting table, thereby reducing attachments (deposits) attached between the back side of the substrate and the mounting table.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-160843 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] The present disclosure provides a technology that can easily adjust the interval between two structural members.

[0008] Solutions for solving problems

[0009] According to a technical solution of the present disclosure, an adjustment member is provided, which adjusts the interval between two structural members, wherein the adjustment member has an annular main body, the main body has a first center, and the main body has: an inner peripheral surface, which has a plurality of inner peripheral recesses arranged in a circumferential direction, each of the plurality of inner peripheral recesses being composed of a curve; an outer peripheral surface, which surrounds the inner peripheral surface from the outside; and a plurality of interval adjustment portions, which have a plurality of main body widths located between the outer peripheral surface corresponding to each of the plurality of inner peripheral recesses and each of the plurality of inner peripheral recesses, and the plurality of main body widths have mutually different widths.

[0010] Effects of the Invention

[0011] According to one aspect, the interval adjustment between two structural members can be easily performed. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 FIG. 1 is a diagram showing an example of a plasma processing apparatus according to an embodiment.

[0013] Figure 2 This is a diagram for explaining the relationship between the height of the shield ring and attached matter according to one embodiment.

[0014] Figure 3 This is a diagram showing an example of the arrangement of the first adjustment member and the second adjustment member according to one embodiment.

[0015] Figure 4 This is a diagram showing an example of a longitudinal cross section of a first adjustment member and its surroundings according to one embodiment.

[0016] Figure 5 This is a diagram showing an example of a main body of a first adjustment member according to an embodiment.

[0017] Figure 6 This is a diagram showing an example of a main body of a first adjustment member according to an embodiment.

[0018] Figure 7 This is a diagram showing an example of the operation of the first adjustment member according to one embodiment.

[0019] Figure 8 This is a diagram showing an example of a second adjustment member according to an embodiment.

[0020] Fig. 9 It is a diagram showing the state of thermal expansion of the shield ring of the reference example.

[0021] Fig.10 It is a diagram showing a spacing adjustment structure according to the second embodiment.

[0022] Fig.11 This is a graph showing the distance between the bottom surface of the substrate and the top surface of the shield ring measured at each position in the longitudinal direction of the shield ring.

[0023] Fig.12 It is a diagram showing an example of a stepped labyrinth structure of a shield ring and an island shape of a positioning member.

[0024] Description of Reference Numerals

[0025] 10. Plasma processing device; 20. Processing container; 70. Substrate mounting table (mounting table); 71. Base material; 71a. Upper surface; 74. Electrostatic chuck; 75. First ring member; 76. Side shielding member; 79. Shielding ring; 100. First adjustment member; 101. Main body; 200. Second adjustment member. DETAILED DESCRIPTION

[0026] Hereinafter, the mode for implementing the present disclosure will be described with reference to the drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0027] In this specification, the directions of parallel, right angle, orthogonal, horizontal, vertical, up and down, left and right are allowed to deviate to a certain extent without damaging the effect of the embodiment. The shape of the corner is not limited to a right angle, and can also be arched with rounded corners. Parallel, right angle, orthogonal, horizontal, vertical, round, and consistent can include approximately parallel, approximately right angle, approximately orthogonal, approximately horizontal, approximately vertical, approximately round, and approximately consistent. Ring-shaped includes rectangular ring-shaped. Cylindrical includes rectangular cylindrical. Up and down corresponds to the up and down direction when the substrate processing device described later is set, and left and right are based on the up and down direction.

[0028] [Substrate processing equipment]

[0029] use Figure 1 The plasma processing apparatus 10 will be described. Figure 1 1 is a longitudinal sectional view showing an example of the plasma processing apparatus 10. The plasma processing apparatus 10 is an example of a substrate processing apparatus.

[0030] Figure 1 The plasma processing device 10 shown is an inductively coupled plasma (ICP) processing device that performs various substrate processing methods on a top-view rectangular substrate G (hereinafter referred to as "substrate") for a flat panel display (Flat Panel Display, hereinafter referred to as "FPD"). As the material of the substrate G, glass is mainly used, and transparent synthetic resins are sometimes used depending on the application. Here, the substrate processing includes film forming processing, etching processing, etc. using a CVD (Chemical Vapor Deposition) method. Examples of FPD include liquid crystal displays (LCD), electroluminescence (EL), plasma display panels (PDP), etc. The substrate G includes a supporting substrate in addition to a circuit patterned on its surface. In addition, the planar size of the FPD substrate has become larger with the passage of generations, and the planar size of the substrate G processed by the plasma processing apparatus 10 ranges from about 1500 mm×1800 mm in the 6th generation to about 3000 mm×3400 mm in the 10.5th generation, for example. In addition, the thickness of the substrate G is about 0.2 mm to several mm.

[0031] Figure 1The plasma processing apparatus 10 shown in the figure comprises: a processing container 20 having a rectangular box shape and accommodating a substrate G; a substrate mounting table (mounting table) 70, which is arranged in the processing container 20 and has a rectangular outer shape in a plan view for mounting the substrate G; and a control unit 90. In addition, the processing container 20 may also be a cylindrical box shape, an elliptical cylindrical box shape, etc. In this embodiment, the substrate mounting table 70 is also circular or elliptical, and the substrate G mounted on the substrate mounting table 70 is also circular.

[0032] The processing container 20 is divided into two spaces, upper and lower, by the metal window 30. The antenna room A as the upper space is formed by the upper chamber 13, and the processing chamber S as the lower space is formed by the lower chamber 17. In the processing container 20, a rectangular ring-shaped support frame 14 is provided at a position that becomes a boundary between the upper chamber 13 and the lower chamber 17 so as to protrude toward the inner side of the processing container 20, and the metal window 30 is mounted on the support frame 14.

[0033] The upper chamber 13 forming the antenna chamber A is formed by the side wall 11 and the top plate 12, and is formed entirely of metal such as aluminum or aluminum alloy.

[0034] The lower chamber 17 having the processing chamber S therein is formed of a side wall 15 and a bottom plate 16 , and is entirely made of metal such as aluminum or an aluminum alloy. The side wall 15 is grounded by a grounding wire 21 .

[0035] The support frame 14 is formed of conductive metal such as aluminum or aluminum alloy, and can also be called a metal frame.

[0036] A rectangular ring-shaped (annular) sealing groove 22 is formed at the upper end of the side wall 15 of the lower chamber 17. A sealing member 23 such as an O-ring is embedded in the sealing groove 22, and the abutting surface of the support frame 14 holds the sealing member 23, thereby forming a sealing structure between the lower chamber 17 and the support frame 14.

[0037] A delivery port 15a for delivering the substrate G to and from the lower chamber 17 is provided on the side wall 15 of the lower chamber 17, and the delivery port 15a is configured to be freely opened and closed by a gate valve 24. A conveying chamber (not shown) having a conveying mechanism built therein is adjacent to the lower chamber 17, and the gate valve 24 is controlled to be opened and closed, and the substrate G is delivered through the delivery port 15a by the conveying mechanism.

[0038] In addition, the side wall 15 of the processing container 20 that accommodates the substrate stage 70 in the lower chamber 17 is formed in a square tube shape. In other words, the processing container 20 is formed in a rectangular shape in horizontal cross section at least at the position of the lower chamber 17 that accommodates the substrate stage 70. In addition, when viewed from above, the substrate stage 70 is formed in a rectangular shape (see Figure 3). In other words, the horizontal cross section of the substrate stage 70 is formed into a rectangular shape. A plurality of exhaust ports 16a are provided on the bottom plate 16 of the lower chamber 17. A plurality of exhaust ports 16a are arranged on the bottom plate 16 of the processing container 20 so as to surround the substrate stage 70. In other words, the exhaust ports 16a are arranged at a position that is outside the substrate stage 70 and inside the side wall 15 of the processing container 20 (lower chamber 17) when viewed from above.

[0039] Each exhaust port 16a is connected to an exhaust device 300. In addition, a pressure gauge (not shown) is provided at an appropriate position of the lower chamber 17, and monitoring information of the pressure gauge is sent to the control unit 90.

[0040] The substrate mounting table 70 includes a base material 71 and an electrostatic chuck 74 stacked on an upper surface 71 a of the base material 71. In the present embodiment, a mounting surface on which the substrate G is mounted is provided on the upper surface of the electrostatic chuck 74.

[0041] The top view shape of the substrate 71 is rectangular, and has a plane size of the same degree as the substrate G placed on the substrate mounting table 70. The length of the long side of the substrate 71 can be set to about 1800 mm to 3400 mm, and the length of the short side can be set to about 1500 mm to 3000 mm. With respect to this plane size, the thickness of the substrate 71 can be, for example, about 50 mm to 100 mm. In addition, the mounting surface of the substrate mounting table 70 is slightly smaller than the substrate G, and as described later, the outer periphery of the substrate G slightly protrudes from the peripheral portion of the mounting surface.

[0042] A box-shaped susceptor 78 made of an insulating material and having a step portion inside is fixed to the bottom plate 16 of the lower chamber 17 , and the substrate mounting table 70 is mounted on the step portion of the susceptor 78 .

[0043] An electrostatic chuck 74 is formed on the upper surface 71a of the base material 71, on which the substrate G is directly placed. The electrostatic chuck 74 has a ceramic layer 74a (ceramic spray coating) and a conductive layer 74b (electrostatic adsorption electrode). The ceramic layer 74a is a dielectric coating formed by spraying ceramics such as aluminum oxide and yttrium oxide. The conductive layer 74b is embedded in the ceramic layer 74a and has an electrostatic adsorption function, and is formed of tungsten, molybdenum, etc.

[0044] The conductive layer 74b is connected to a DC power supply 85 via a power supply line 84. When a switch (not shown) provided on the power supply line 84 is turned on by the control unit 90, a DC voltage is applied to the conductive layer 74b from the DC power supply 85, thereby generating a Coulomb force. By this Coulomb force, the substrate G is electrostatically adsorbed to the upper surface of the electrostatic chuck 74 and is held in a state of being placed on the upper surface 71a of the base material 71.

[0045] A temperature control medium flow path 72a is provided on the base material 71 constituting the substrate mounting table 70, and is extended in a winding manner to cover the entire area of ​​the rectangular plane. A delivery pipe 72b for supplying the temperature control medium to the temperature control medium flow path 72a and a return pipe 72c for discharging the temperature control medium after flowing through the temperature control medium flow path 72a and increasing the temperature are connected at both ends of the temperature control medium flow path 72a. In addition, the temperature control medium flow path may be provided on a temperature control plate of another component separated from the base material 71.

[0046] The delivery flow path 87 and the return flow path 88 are connected to the delivery pipe 72b and the return pipe 72c respectively, and the delivery flow path 87 and the return flow path 88 are connected to the cooler 86. The cooler 86 has a main body for controlling the temperature and the ejection flow rate of the temperature control medium and a pump for pressurizing and conveying the temperature control medium (both are not shown). In addition, the temperature control medium can be a refrigerant, and the refrigerant is Galden (registered trademark), Fluorinert (registered trademark), etc. The temperature control method shown in the example is a method in which the temperature control medium is circulated in the substrate 71, but it can also be a method in which a heater is built into the substrate 71 and the temperature is controlled by the heater, or it can be a method in which the temperature control medium and the heater are used for temperature control. In addition, it is also possible to replace the heater and to perform temperature control accompanied by heating by circulating a high-temperature temperature control medium. Moreover, a water path and a heater can also be set on the temperature control plate of other components separated from the substrate 71. In addition, the heater as a resistor is formed by tungsten, molybdenum, or a compound of any of these metals and aluminum oxide, titanium, etc.

[0047] A temperature sensor such as a thermocouple (not shown) is provided on the substrate 71, and monitoring information of the temperature sensor is sent to the control unit 90 at any time. Then, based on the sent monitoring information, the control unit 90 performs temperature control of the substrate 71 and the substrate G. More specifically, the control unit 90 adjusts the temperature and flow rate of the temperature control medium supplied from the cooler 86 to the conveying flow path 87. Then, the temperature control of the substrate mounting table 70 is performed by circulating the temperature-controlled and flow-controlled temperature control medium in the temperature control medium flow path 72a. In addition, a temperature sensor such as a thermocouple may also be provided on the electrostatic chuck 74, for example.

[0048] The outer periphery of the electrostatic chuck 74 and the substrate 71 and the upper surface of the base 78 form a step portion, and an annular or cylindrical first ring member 75 surrounding the substrate 71 is arranged on the step portion. An annular or cylindrical side shield 76 extending from the bottom plate 16 to the height of the upper surface of the first ring member 75 is provided on the outer periphery of the base 78 and the outer periphery of the first ring member 75. The first ring member 75 and the side shield 76 are formed of an insulating material such as ceramic, resin, quartz, etc. The outer peripheral surface of the base 78 and the outer peripheral surface of the first ring member 75 are covered by the side shield 76. An annular shield ring 79 surrounding the electrostatic chuck 74 is placed on the first ring member 75. The shield ring 79 is an example of an annular second ring member placed on the first ring member 75. The second ring member surrounds the placement surface (upper surface 71a) of the substrate 71. The outer periphery of the shield ring 79 is placed on the upper surface of the side shield 76. The shield ring 79 is formed of ceramic such as alumina, quartz, or the like.

[0049] When the first ring member 75 and the shield ring 79 are provided on the step portion, the upper surface of the shield ring 79 is set to be lower than the upper surface of the electrostatic chuck 74 (the mounting surface of the substrate G).

[0050] A power supply member 80 is connected to the lower surface of the substrate 71. A power supply line 81 is connected to the lower end of the power supply member 80, and the power supply line 81 is connected to a high-frequency power supply 83 as a bias power supply via a matching device 82 for impedance matching. A high-frequency power of, for example, 3.2 MHz is applied to the substrate mounting table 70 from the high-frequency power supply 83. As a result, an RF bias is generated, and ions generated by the high-frequency power supply 56 as a source for plasma generation described below are attracted to the substrate G, and, for example, a film forming process can be performed on the substrate G. In this way, the substrate mounting table 70 forms a bias electrode that mounts the substrate G and generates an RF bias. At this time, the portion of the lower chamber 17 that becomes the ground potential functions as a counter electrode of the bias electrode, constituting a return circuit for the high-frequency power. In addition, the metal window 30 can also be configured as a part of the return circuit for the high-frequency power. The metal window 30 is formed by a plurality of split metal windows 31. The number of split metal windows 31 forming the metal window 30 can be set to a variety of numbers such as 12 and 24.

[0051] The divided metal window 31 has a conductor plate 32 and a shower plate 34. The divided metal window 31 also serves as a processing gas ejection portion for ejecting processing gas into the interior of the processing chamber S. Both the conductor plate 32 and the shower plate 34 are formed of a non-magnetic, conductive, and corrosion-resistant metal or a metal that has undergone a corrosion-resistant surface treatment, i.e., aluminum, aluminum alloy, stainless steel, etc. The corrosion-resistant surface treatment is, for example, anodizing treatment, ceramic spraying, etc. In addition, a plasma-resistant coating based on anodizing treatment or ceramic spraying can also be applied to the exposed surface 34a of the shower plate 34 facing the processing chamber S. The conductor plate 32 is grounded via a grounding wire (not shown), and the shower plate 34 is also grounded via the conductor plates 32 joined to each other.

[0052] Each divided metal window 31 constituting the metal window 30 is suspended from the ceiling 12 of the upper chamber 13 by a plurality of suspension members (not shown). A spacer (not shown) formed of an insulating member is provided above each divided metal window 31, and a high-frequency antenna (inductive coupling antenna) 51 is provided separately from the conductor plate 32 by the spacer. The high-frequency antenna 51 contributes to the generation of plasma, and is formed by winding an antenna wire formed of a metal with good conductivity such as copper into a ring or spiral shape. For example, multiple ring-shaped antenna wires may also be provided. The high-frequency antenna 51 is provided on the upper surface of the divided metal window 31, and is therefore suspended from the ceiling 12 by means of the divided metal window 31. The high-frequency antenna 51 is provided in the antenna chamber A of the upper chamber 13 at the top of the processing container 20.

[0053] A gas diffusion groove 33 is formed on the lower surface of the conductor plate 32, and a through hole 32b is provided to connect the gas diffusion groove 33 with the upper end surface 32a. A gas introduction pipe 52 is buried in the through hole 32b. A plurality of gas ejection holes 35 are provided in the shower plate 34 to connect the gas diffusion groove 33 of the conductor plate 32 and the processing chamber S. The shower plate 34 is fastened to the lower surface of the area outside the gas diffusion groove 33 of the conductor plate 32 by metal screws (not shown). In addition, the gas diffusion groove may also be provided on the upper surface of the shower plate 34. In addition, the gas diffusion groove 33 is not limited to a concave portion extending in a linear shape, but also includes a concave portion extending on the strip surface.

[0054] Each divided metal window 31 is electrically insulated from the support frame 14 and adjacent divided metal windows 31 by an insulating member 37. Here, the insulating member 37 is formed of a fluororesin such as PTFE (Polytetrafluoroethylene). The end surface 37a of the insulating member 37 facing the processing chamber S is flush with the exposed surface 34a of the shower plate 34 facing the processing chamber S, and an insulating cover member 38 is provided to cover the end surface 37a of the insulating member 37 and straddle the exposed surface 34a of the adjacent shower plate 34. The cover member 38 is formed of ceramics such as alumina.

[0055] The insulating member 37 is formed of a resin such as PTFE which has high insulating performance and is lightweight, but the plasma resistance of the resin is not high compared to ceramics such as alumina. In addition, it is difficult to apply a plasma-resistant coating based on anodizing or ceramic spraying to the surface of the resin. Therefore, in the plasma processing device 10, the end surface 37a of the insulating member 37 on the side of the processing chamber S is covered with a cover member 38 made of, for example, ceramic, so as to protect the insulating member 37 from the influence of plasma. Each insulating member 37 which insulates the support frame 14 from the split metal window 31 and the adjacent split metal windows 31 from each other is covered by the cover member 38.

[0056] A power supply member 53 extending upward from the upper chamber 13 is connected to the high frequency antenna 51 . A power supply line 54 is connected to the upper end of the power supply member 53 . The power supply line 54 is connected to a high frequency power source 56 via a matching device 55 for impedance matching.

[0057] By applying high frequency power of, for example, 13.56 MHz to the high frequency antenna 51 from the high frequency power supply 56, an induced electric field is formed in the lower chamber 17. The induced electric field converts the processing gas supplied from the shower plate 34 to the processing chamber S into plasma to generate inductively coupled plasma, and ions in the plasma are supplied to the substrate G.

[0058] The high frequency power source 56 is a source for generating plasma, and the high frequency power source 83 connected to the substrate mounting table 70 becomes a bias power source for attracting ions generated by the generation of plasma to the substrate G and giving kinetic energy. In this way, the ion source generates plasma by inductive coupling, and the bias power source as another power source is connected to the substrate mounting table 70 to control the ion energy. In this way, the generation of plasma and the control of ion energy are performed independently, which can improve the degree of freedom of the process.

[0059] The gas introduction pipes 52 of the divided metal windows 31 are gathered at one point in the antenna room A, and the gas introduction pipes 52 extending upwards are airtightly passed through the supply port 12a provided in the ceiling 12 of the upper chamber 13. The gas introduction pipes 52 are connected to a processing gas supply source 64 via an airtightly coupled gas supply pipe 61.

[0060] An on-off valve 62 and a flow controller 63 such as a mass flow controller are provided at a midway position of the gas supply pipe 61. The gas supply pipe 61, the on-off valve 62, the flow controller 63, and the process gas supply source 64 form a process gas supply unit 60. In addition, the gas supply pipe 61 is branched at a midway position, and the on-off valve and the flow controller, the process gas supply source corresponding to the type of the process gas, or the cleaning gas supply source are connected to each branch pipe (not shown).

[0061] During the plasma treatment, the process gas supplied from the process gas supply unit 60 is supplied to the gas diffusion grooves 33 of the conductor plate 32 of each partition metal window 31 via the gas supply pipe 61 and the gas introduction pipe 52. Then, the process gas is ejected from each gas diffusion groove 33 into the process chamber S via the gas ejection holes 35 of each shower plate 34.

[0062] In this way, the plasma processing apparatus 10 includes a first plasma generating unit that generates processing plasma to perform substrate processing (film forming processing, etching processing, etc.) on the substrate G. The first plasma generating unit includes at least a metal window 30 and a high-frequency antenna 51. A high-frequency power source 56 supplies high-frequency power to the high-frequency antenna 51, and a processing gas supply unit 60 supplies processing gas to the processing chamber S via the divided metal window 31 (processing gas ejection unit). The first plasma generating unit forms an induced electric field in the processing chamber S, and generates plasma of the processing gas supplied to the processing chamber S using the induced electric field.

[0063] The control unit 90 controls the operation of each component of the plasma processing device 10, such as the cooler 86, the high-frequency power supply 56, 83, the processing gas supply unit 60, and the exhaust device 300 based on the monitoring information sent from the pressure gauge. The control unit 90 has a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU performs a predetermined process according to the process (process recipe) stored in the storage area of ​​the RAM and ROM. The control information of the plasma processing device 10 for the process conditions is set in the process. The control information includes, for example, the gas flow rate, the pressure in the processing container 20, the temperature in the processing container 20, the temperature of the substrate 71, the processing time, etc.

[0064] The process and the program used by the control unit 90 may be stored in a hard disk, an optical disk, a magneto-optical disk, etc. In addition, the process and the like may be stored in a portable computer-readable storage medium such as a CD-ROM, a DVD, a memory card, etc. and set in the control unit 90 and read out. The control unit 90 also has a user interface such as a keyboard, a mouse, etc. for inputting commands, a display device such as a display for visually displaying the operating status of the plasma processing device 10, and an output device such as a printer.

[0065] [Adjustment components]

[0066] In the plasma processing apparatus 10 described above, the shield ring 79 is arranged so as to surround the mounting surface (e.g., the upper surface of the electrostatic chuck 74) of the substrate mounting table 70 on which the substrate G is mounted. Since the mounting surface is slightly smaller than the substrate G, the outer periphery of the substrate G protrudes from the periphery of the mounting surface and extends to the inner periphery of the shield ring 79.

[0067] Figure 2 This is a diagram for explaining the relationship between the height of the shield ring 79 and the attached matter according to one embodiment. Figure 2 1 is a longitudinal sectional view showing the periphery of the outer peripheral portion of the substrate G. The substrate G extends to the inner peripheral portion of the shield ring 79 outside the peripheral edge of the mounting surface.

[0068] At this time, if Figure 2 As shown in (a), the upper surface of the shielding ring 79 is formed at a position slightly lower than the mounting surface (the upper surface of the electrostatic chuck 74), so the outer periphery of the substrate G does not contact the shielding ring 79, and a gap is formed between the shielding ring 79.

[0069] The gap becomes Figure 2 When the number of substrates G processed in the processing container 20 increases, as shown in (a) of FIG. Figure 2 As shown in (b), the reaction products etc. enter from the intrusion path and adhere to the peripheral portion of the mounting surface. This causes the following problem: during substrate processing, the components around the outer periphery of the substrate G are ground due to thermal expansion, such as Figure 2 As shown in (b) of FIG. 7 , if the adhered reaction product is peeled off and flies onto the electrostatic chuck 74 , the adhesion between the substrate G and the mounting surface is impaired.

[0070] Therefore, it is also considered to intentionally set a gap of a specified width between the peripheral side of the substrate mounting table 70 directly below the mounting surface and the inner peripheral side of the shielding ring 79 to guide the reaction products into the gap and accommodate them in the gap, but the reaction products cannot be fully removed from the peripheral edge of the mounting surface.

[0071] Therefore, in this embodiment, if Figure 2 As shown in (c), the reaction product is suppressed from entering the periphery of the substrate G by reducing the gap H between the substrate G and the shield ring 79. The size of the appropriate gap between the substrate G and the shield ring 79 can be changed according to the situation, so it is preferably not fixed but can be easily changed. Figure 1 As shown, a first adjustment member 100 capable of adjusting the interval between the shield ring 79 and the first ring member 75 therebelow is provided on the inner side surface of the first ring member 75 .

[0072] Figure 31 is a diagram showing an example of the arrangement of the first adjustment member 100 according to one embodiment. The solid circle shows an example of the position where the first adjustment member 100 is arranged. The dotted circle shows an example of the position where the second adjustment member 200 is arranged.

[0073] The first adjustment member 100 is provided at the center of the side of the shield ring 79. Figure 3 In the embodiment, one first adjustment member 100 is disposed on each side, and a total of four are disposed, but the present invention is not limited thereto. For example, a plurality of first adjustment members 100 may be disposed on each side. A second adjustment member 200 is disposed at a corner of the substrate 71 (electrostatic chuck 74).

[0074] The first adjustment member 100 and the second adjustment member 200 are examples of adjustment members for reducing the gap between the substrate G and the shield ring 79. The arrangement of the adjustment members is not limited to Figure 3 In the case of using both the first adjustment member 100 and the second adjustment member 200 as in the example of , the first adjustment member 100 and the second adjustment member 200 may be uniformly arranged on either one of the first adjustment member 100 and the second adjustment member 200. The second adjustment member 200 has a simpler structure than the first adjustment member 100, but the first adjustment member 100 has a structure that is difficult to lose compared to the second adjustment member 200, so the first adjustment member 100 may be arranged only on the sides and corners. In addition, the simplicity of the structure may be emphasized, and the second adjustment member 200 may be arranged only on the sides and corners. Figures 4 to 6 The structure and operation of the first adjustment member 100 will be described. Figure 8 The structure of the second adjustment member 200 will be described.

[0075] [First adjustment member]

[0076] Figure 4 1 is a diagram showing an example of a longitudinal section of the first adjustment member 100 and its surroundings according to an embodiment. The first adjustment member 100 is an example of an adjustment member that adjusts the interval between two structural members. In this embodiment, the first adjustment member 100 adjusts the interval between the first ring member 75 and the shielding ring 79, which are examples of two structural members, by adjusting the height of the shielding ring 79. As a result, the gap H between the substrate G and the shielding ring 79 can be adjusted.

[0077] The substrate mounting table 70 includes a base material 71, an electrostatic chuck 74, a first ring member 75, a shield ring 79, a shaft member 102, and a first adjustment member 100. The shaft member 102 is disposed so as to straddle between the base material 71 and the first ring member 75.

[0078] The shaft member 102 is a connecting member connecting the base material 71 and the first ring member 75. The shaft member 102 has a threaded portion 102a, a cylindrical member 102b, and a cover portion 102c. The cylindrical member 102b is hollow and has: a bottom portion having a through hole; and an opening, which is located at the top end on the side opposite to the bottom. The threaded portion 102a penetrates the through hole of the bottom of the cylindrical member 102b from the inside of the cylindrical member 102b. The head of the threaded portion 102a has a larger diameter than the through hole, so the head of the threaded portion 102a cannot pass through the through hole. The first adjustment member 100 is annular with an opening in the center, and the bottom of the cylindrical member 102b of the shaft member 102 penetrates the opening of the first adjustment member 100. The outer diameter of the bottom of the cylindrical member 102b is smaller than the outer diameter of the main body excluding the bottom, and the inner diameter of the opening of the first adjustment member 100 is larger than the diameter of the bottom of the cylindrical member 102b. In the case where the inner diameter of the opening of the first adjustment member 100 is smaller than the diameter of the main body of the cylindrical member 102b, the first adjustment member 100 cannot pass the main body of the cylindrical member 102b. In other words, the main body of the cylindrical member 102b cannot pass through the opening of the first adjustment member 100. As a result, the first adjustment member 100 is prevented from falling off. On the other hand, considering the convenience of installing the first adjustment member 100, it is more convenient to make the inner diameter of the opening of the first adjustment member 100 larger than the diameter of the main body of the cylindrical member 102b. Even in this case, since the first adjustment member 100 abuts against the first ring member 75, the main body of the cylindrical member 102b cannot pass. That is, the main body of the cylindrical member 102b is configured as a combined structure including the first ring member 75 and cannot pass through the opening of the first adjustment member 100. Therefore, the size relationship between the diameter of the main body of the cylindrical member 102b and the inner diameter of the opening of the first adjustment member can be determined based on convenience.

[0079] The side of the inner circumference of the first ring member 75 has a step portion 75b and a recessed portion 75c connected to the step portion 75b. The bottom of the cylindrical member 102b abuts against the side of the substrate 71 opposite to the recessed portion 75c, and the threaded portion 102a is inserted into the hole portion provided on the side of the substrate 71 and screwed. Thus, the cylindrical member 102b is fixed to the substrate 71. However, the shaft member 102 is not limited to being fixed by a threaded structure.

[0080] The opening at the top of the cylindrical member 102b is closed by the cover 102c. The cover 102c and the cylindrical member 102b are sealed by a sealing member 102d such as an O-ring to prevent plasma, gas, etc. from entering the cylindrical member 102b. The cylindrical member 102b of the shaft member 102 is accommodated in a recessed portion 75c formed on the side of the first ring member 75.

[0081] At least a portion of the outer peripheral surface of the first adjustment member 100 protrudes from the upper surface 75a of the first ring member 75 and abuts against the lower surface of the shielding ring 79. The first adjustment member 100 is arranged in a space between the step portion 75b of the first ring member 75 and the side surface of the substrate 71 opposite to the step portion 75b, and is capable of rotating around the shaft member 102. At least a portion of the outer peripheral surface of the first adjustment member 100 protrudes from the upper surface 75a of the first ring member 75, and can be manually rotated by a person (operator, etc.) before configuring the shielding ring 79. However, the first adjustment member 100 can also be automatically rotated without relying on human hands. In this case, the rotation action can also be controlled by the control unit 90. By rotating the first adjustment member 100, the height of the outer peripheral surface of the first adjustment member 100 protruding from the upper surface 75a can be changed. As a result, the height of the shielding ring 79 can be changed, and the interval between the first ring member 75 and the shielding ring 79 can be changed. Thus, it is possible to adjust Figure 2 (c) shows a gap H between the substrate G and the shield ring 79.

[0082] Regardless of the installation state of the first adjustment member 100 (the positions of the plurality of interval adjustment portions described later), the upper surface of the shield ring 79 is located below the mounting surface (the upper surface of the electrostatic chuck 74). Figure 2 The gap H between the lower surface of the substrate G and the upper surface of the shield ring 79 shown in (c) is larger than 0.

[0083] The first adjustment member 100 is provided at the step portion 75b of the inner peripheral side surface of the first ring member 75. The position of the first adjustment member 100 is preferably located as close to the inner peripheral side of the shield ring 79 as possible. Since the height of the shield ring 79 is measured near the inner side surface of the shield ring 79, the height adjustment is easily performed by adjusting the height based on the first adjustment member 100 directly below the measurement position of the height of the shield ring 79. The side shield 76 can be raised and lowered by a lifting mechanism not shown in the figure, and the height of the outer peripheral side of the shield ring 79 can be changed by raising and lowering the side shield 76. Therefore, if the first adjustment member 100 is arranged at a position outside the center of the width of the first ring member 75 in the radial direction, the height adjustment of the first adjustment member 100 may become meaningless due to the height adjustment of the side shield 76. Therefore, the position of the first adjustment member 100 is preferably located at least inside the center of the width of the first ring member 75 in the radial direction. It is also conceivable to adjust the height of the inner peripheral side of the shield ring 79 by using the same member as the side shield 76 . However, in this case, the structure is expected to be complicated compared with the outer peripheral side, which is not very advantageous.

[0084] [Structure of the first adjustment member]

[0085] Reference Figure 5 and Figure 6The structure of the first adjustment member 100 will be described in detail. Figure 5 and Figure 6 This is a diagram showing an example of a main body of the first adjustment member 100 according to one embodiment.

[0086] The first adjustment member 100 has an annular main body 101 having a first center C. The main body 101 is an annular member having a petal-like shape at an inner peripheral surface 101 b and an outer peripheral surface 101 c . Figure 5 (a) indicates four petal-shaped members, i.e., an annular member having outward protrusions at four locations, Figure 5 (b) indicates a 6-petal shape, that is, an annular component having outward protrusions at 6 locations.

[0087] The main body 101 has an inner peripheral surface 101b and an outer peripheral surface 101c. The inner peripheral surface 101b has a plurality of inner peripheral concave portions arranged in a circumferential direction, and each of the plurality of inner peripheral concave portions is formed by a curve. The outer peripheral surface 101c surrounds the inner peripheral surface 101b from the outside. Figure 5 In the example of (a), the inner peripheral surface 101b has four inner peripheral recesses 101b1, 101b2, 101b3, and 101b4 arranged in the circumferential direction, and the four inner peripheral recesses 101b1 to 101b4 are respectively formed by curved lines. Figure 5 In the example of (b), the inner peripheral surface 101b has six inner peripheral recesses 101b1, 101b2, 101b3, 101b4, 101b5, and 101b6 arranged in the circumferential direction, and the six inner peripheral recesses 101b1 to 101b6 are respectively composed of curved lines.

[0088] The outer peripheral surface 101c has a plurality of outer peripheral protrusions arranged in the circumferential direction corresponding to the plurality of inner peripheral concave portions, and the plurality of outer peripheral protrusions are respectively formed by curved lines. Figure 5 In the example (a), the outer surface 101c has four outer circumferential protrusions 101c1, 101c2, 101c3, and 101c4 arranged in the circumferential direction, and the four outer circumferential protrusions 101c1 to 101c4 are respectively composed of curves. Moreover, the outer circumferential protrusion 101c1 corresponds to the inner circumferential concave portion 101b1, the outer circumferential protrusion 101c2 corresponds to the inner circumferential concave portion 101b2, the outer circumferential protrusion 101c3 corresponds to the inner circumferential concave portion 101b3, and the outer circumferential protrusion 101c4 corresponds to the inner circumferential concave portion 101b4. Figure 5 In the example (b), the outer peripheral surface 101c has six outer peripheral convex portions 101c1, 101c2, 101c3, 101c4, 101c5, and 101c6 arranged in the circumferential direction, and the six outer peripheral convex portions 101c1 to 101c6 are respectively composed of curved lines. Figure 5 In (b), it is also related to Figure 5Similarly, the outer peripheral protrusions 101c1 to 101c6 correspond to the inner peripheral recesses 101b1 to 101b6, respectively.

[0089] The main body 101 has a plurality of interval adjustment parts. The plurality of interval adjustment parts are parts of the main body 101. Figure 5 In the example (a), the main body 101 has four spacing adjustment parts 101A, 101B, 101C, and 101D. The four spacing adjustment parts 101A to 101D have a plurality of main body widths located between the four inner peripheral recesses 101b1 to 101b4 and the four outer peripheral protrusions 101c1 to 101c4 corresponding to these inner peripheral recesses 101b1 to 101b4, and the plurality of main body widths have mutually different widths. That is, the four spacing adjustment parts 101A to 101D respectively have mutually different main body widths. Figure 5 In the example of (a), in the spacing adjustment parts 101A to 101D, when the main body width of the spacing adjustment part 101A is expressed as "0 mm" based on the main body width of the spacing adjustment part 101A, the main body width of the spacing adjustment part 101B is 0.1 mm wider than the main body width of the spacing adjustment part 101A. The main body width of the spacing adjustment part 101C is 0.2 mm wider than the main body width of the spacing adjustment part 101A. The main body width of the spacing adjustment part 101D is 0.3 mm wider than the main body width of the spacing adjustment part 101A. Marks indicating the widths of the spacing adjustment parts 101A to 101D are marked, and the different main body widths of the spacing adjustment parts 101A to 101D can be distinguished by using the marks.

[0090] In this way, the first adjustment member 100 is annular and has multiple different widths depending on the orientation. The inner circumferential recess and the outer circumferential protrusion of each of the multiple interval adjustment parts are arc-shaped, and the main body width of each interval adjustment part is constant. Therefore, when the main body 101 is rotated around the center C, while the outer circumferential surface 101c protruding from the upper surface 75a of the first ring member 75 is within the range of the arc of the interval adjustment part, the height of the shielding ring 79 is adjusted to a certain height corresponding to the main body width of each interval adjustment part. However, the inner circumferential recess and the outer circumferential protrusion of each interval adjustment part are not limited to arc-shaped, and can also be a curve based on other functions such as a parabola.

[0091] The inner concave portion of the inner circumferential surface 101b and the outer convex portion of the outer circumferential surface 101c, which respectively form a plurality of body widths, are arcs having a common second center and different curvature radii. Figure 6 As shown in FIG. 1 , a virtual circle V is set inside the inner peripheral surface 101 b and shares the first center C with the main body 101 . In this case, the second center is set on the circumference of the virtual circle V.

[0092] exist Figure 6In the example of , the inner concave portion 101b1 and the outer convex portion 101c1 of the interval adjustment portion 101A are arcs having a common second center P1 and different curvature radii r1 and curvature radii r2. Reference symbol r1 represents the curvature radius from the second center P1 to the inner concave portion 101b1, and reference symbol r2 represents the curvature radius from the second center P1 to the outer convex portion 101c1. That is, the outward arc of the inner circumferential surface 101b of the annular main body 101 (inner circumferential concave portion 101b1) and the outward arc of the outer circumferential surface 101c (outer circumferential convex portion 101c1) are depicted as having a common center on the circumference of the imaginary circle V.

[0093] The inner concave portion 101b6 and the outer convex portion 101c6 of the interval adjustment portion 101F are arcs having a common second center P2 and different curvature radii r3 and curvature radii r4. Reference numeral r3 represents the curvature radius from the second center P2 to the inner concave portion 101b6, and reference numeral r4 represents the curvature radius from the second center P2 to the outer convex portion 101c6. Similarly, each inner concave portion and each outer convex portion in the interval adjustment portions 101B to 101E are also arcs having a common second center and different curvature radii. In this way, the multiple second centers associated with the multiple interval adjustment portions 101A to 101F are all set on the circumference of the same imaginary circle V.

[0094] Alternatively, the curvature radii of the circular arcs of the plurality of inner circumferential concave portions are the same as each other, and the curvature radii of the circular arcs of the plurality of outer circumferential convex portions are different from each other. Alternatively, the curvature radii of the circular arcs of the plurality of inner circumferential concave portions are different from each other, and the curvature radii of the circular arcs of the plurality of outer circumferential convex portions are the same as each other. Alternatively, the curvature radii of the circular arcs of the plurality of inner circumferential concave portions are different from each other, and the curvature radii of the circular arcs of the plurality of outer circumferential convex portions are also different from each other.

[0095] According to this structure, the inner peripheral surface 101b has concavities and convexities within the range to be adjusted. As a result, a mechanism for height adjustment and rotation suppression can be formed in the first adjustment member 100. Figure 7 , the operation of the first adjustment member 100 using the mechanism for adjusting the height of the first adjustment member 100 and suppressing the rotation thereof will be described.

[0096] Figure 7 (a) is a perspective view of the shaft member 102 and the main body 101 of the first adjustment member 100 as viewed from the upper surface 75a side of the first ring member 75. Figure 7 As shown in FIG. 1 (a), at least a portion of the outer peripheral surface of the main body 101 of the first adjustment member 100 protrudes from the upper surface 75a of the first ring member 75. Therefore, the main body 101 can be rotated manually.

[0097] Figure 7 (b) shows an example of the rotational motion of the main body 101. Figure 7 As shown in (b), the opening of the main body 101 is larger than the outer diameter of the bottom 102b2 of the shaft member 102 (cylindrical member 102b). Figure 7 As shown in (b-1), the upper part of the opening of the main body 101 is hooked on the bottom 102b2 of the cylindrical member 102b, and is suspended from the bottom 102b2 in a state where a gap is left at the lower part of the opening of the main body 101. In this state, the amount by which the shield ring 79 is pushed up, that is, the height of the inner circumference of the shield ring 79 is determined according to the main body width of the interval adjustment portion protruding from the upper surface 75a of the first ring member 75. In this way, the interval between the first ring member 75 and the shield ring 79 can be adjusted.

[0098] The first ring member 75 and the shielding ring 79 and other components expand and contract due to heat input from plasma during substrate processing. As a result, it is believed that friction is generated between the components and the main body 101 rotates. In this case, each spacing adjustment portion also has a certain length and a certain width of the main body in the rotation direction and is formed in an arc shape. Therefore, even if the main body 101 rotates and the spacing adjustment portion is slightly offset, it will not rotate to the adjacent spacing adjustment portion, and the height of the shielding ring 79 will not change.

[0099] The inner peripheral surface 101b is alternately formed with a plurality of inner peripheral recesses corresponding to the interval adjustment portions within the range to be adjusted (for example, see Figure 5 (b) inner circumferential recesses 101b1 to 101b6) and inner circumferential protrusions between the inner circumferential recesses. When the main body 101 rotates, when it rotates to the adjacent spacing adjustment portion, the main body 101 is slightly lifted up by the inner circumferential protrusions. In other words, the structure is such that as long as the main body 101 cannot be lifted up by the inner circumferential protrusions without exceeding the weight of the main body 101 and the load of the shielding ring 79 placed on the upper portion thereof, the main body 101 is prevented from accidentally rotating due to thermal expansion and the like and rotating to the adjacent spacing adjustment portion. For example, Figure 7 In the state where the interval adjustment part 101A of (b-1) protrudes from the upper surface 75a, even if the main body 101 is accidentally rotated, the interval adjustment part protruding from the upper surface 75a can be prevented from moving from the interval adjustment part 101A to the adjacent interval adjustment part. Therefore, the inner circumferential convex part between the inner circumferential concave parts of the inner circumferential surface 101b is preferably provided on the main body 101.

[0100] The outer peripheral convex portion of the outer peripheral surface 101c (for example, see Figure 5 The concave portion between the outer peripheral convex portions 101c1 to 101c6 of (b) has a function of making it easy to rotate the first adjustment member 100 by placing a finger on the concave portion. For example, if an operator places a finger on Figure 7The recess between the interval adjustment parts 101A and 101F of (b-1) is as follows Figure 7 As shown in (b-2), the main body 101 is rotated counterclockwise, then Figure 7 As shown in (b-3), the main body 101 is slightly lifted by the inner circumferential convex portion. If the main body 101 is further rotated, as shown in Figure 7 As shown in (b-4), the main body 101 is in a state where the inner circumferential recess of the interval adjustment part 101F is stably suspended around the axis of the bottom 102b2 of the cylindrical member 102b. Thus, in a state where the rotation in both directions is suppressed by the adjacent convex parts on both sides of the inner circumferential recess of the interval adjustment part 101F, the height of the inner circumferential side of the shielding ring 79 is determined by the main body width of the interval adjustment part 101F. Thus, the interval between the first ring member 75 and the shielding ring 79 can be readjusted. However, the recess of the outer circumferential surface 101c may also be absent. For example, the outer circumferential surface 101c may also be circular.

[0101] like Figure 5 As shown, with 0 mm as a reference, the main body widths of the plurality of spacing adjustment parts have widths such as 0.1 mm, 0.2 mm, 0.3 mm, etc., which can adjust the shield ring 79. Therefore, by rotating the petal-shaped ring member, i.e., the main body 101, it is possible to select the spacing adjustment part having the outer peripheral surface protruding from the upper surface 75a from the plurality of spacing adjustment parts. Thus, the height of the shield ring 79 can be finely adjusted in units of, for example, 0.1 mm.

[0102] like Figure 3 As shown, the first adjustment member 100 described above is configured in plurality. In order to adjust the gap between the substrate G and the shielding ring 79, the height adjusted by the four first adjustment members 100 arranged on each side of the shielding ring 79 may be the same or different in each first adjustment member 100. The height of the shielding ring 79 can be adjusted to a height close to that of the electrostatic chuck 74 (lower electrode) by each first adjustment member 100. In addition, the case where the shaft member 102 penetrating the first adjustment member is a connecting member connecting the substrate 71 and the first ring member 75 is described, but it is not limited to this. In addition to the connecting member, a shaft member may also be provided as a dedicated member for penetrating the first adjustment member.

[0103] [Second adjustment member]

[0104] Reference Figure 8 illustrate Figure 3 The structure of four second adjustment members 200 arranged at the corners is shown. Figure 8 FIG. 1 is a diagram showing an example of the second adjustment member 200 according to one embodiment.

[0105] like Figure 8As shown in (c), the second adjustment member 200 prepares a plurality of components 201a to 201e of different heights, and the height of the shielding ring 79 is adjusted by replacing the components 201a to 201e of different heights. When "0 mm" is expressed with the height of component 201a as a reference, the height of component 201b is 0.1 mm higher than the height of component 201a. The height of component 201c is 0.2 mm higher than the height of component 201a. The height of component 201d is 0.3 mm higher than the height of component 201a. The height of component 201e is 0.4 mm higher than the height of component 201a. Marks indicating the respective heights are marked on the upper surfaces of the components 201a to 201e, and the different heights of the components 201a to 201e can be distinguished based on the marks.

[0106] The second adjustment member 200 has a base 202 whose upper surface 202c is roughly V-shaped and cylindrical convex members 203a and 203b for positioning. Concave portions 202a and 202b are formed in the center of the sides extending from the center of the roughly V-shaped upper surface 202c to both sides, and the concave portions 202a and 202b have a diameter slightly larger than the diameter of the components 201a to 201e. The operator embeds any one of the components 201a to 201e in each concave portion 202a and 202b. Thus, one of the concave portions 202a and 202b is used for height adjustment on the short side of the shielding ring 79, and the other is used for height adjustment on the long side. The heights of the components 201a to 201e embedded in the concave portions 202a and 202b may also be different.

[0107] The convex members 203a and 203b are located outside the concave parts 202a and 202b. Two holes are formed on the lower surface of the shield ring 79 at positions opposite to the convex members 203a and 203b, and the convex members 203a and 203b are inserted into the holes to be positioned. That is, the convex members 203a and 203b are used for positioning to prevent the shield ring 79 from moving in the lateral direction.

[0108] [Adjustment method]

[0109] As described above, in the method for adjusting the height of the shield ring 79 using the first adjustment member 100, the first adjustment member 100 is rotated around the shaft member 102. Thus, the interval adjustment portion that contacts the shield ring 79 is selected from the plurality of interval adjustment portions. Thus, the outer peripheral surface of the selected interval adjustment portion contacts the lower surface of the shield ring 79. As a result, the interval between the first ring member 75 and the shield ring 79 can be adjusted.

[0110] Since the inner circumferential surface 101b of the first adjustment member 100 is wavy with a plurality of inner circumferential recesses, the inner circumferential recesses can be utilized to stably keep the main body 101 on the shaft of the shaft member 102. Thus, the outer circumferential surface of the selected interval adjustment portion in contact with the lower surface of the shield ring 79 can be stably maintained, and the interval between the first ring member 75 and the shield ring 79 can be accurately adjusted.

[0111] One of the times when the first adjustment member 100 is rotated to select the interval adjustment portion and adjust the height of the shield ring 79 is when the plasma processing apparatus 10 is assembled and installed in a factory or the like. Afterwards, when the processing container 20 is opened to the atmosphere for maintenance in the processing container 20, the first adjustment member 100 may be rotated and the height may be adjusted again. In addition, during maintenance, the height may be adjusted when the components of the first adjustment member 100 and the second adjustment member 200 are removed and cleaned, and then installed.

[0112] [other]

[0113] If the conductive member can be seen by the plasma generated in the processing container 20, a discharge phenomenon occurs toward the conductive member, and abnormal discharge may occur. Therefore, the first adjustment member 100 and the second adjustment member 200 are preferably insulating materials such as ceramics, resins, and quartz. However, when plasma is not used in the processing container 20, the first adjustment member 100 and the second adjustment member 200 may also be metals.

[0114] [Regarding the warping of the shield ring]

[0115] Fig. 9 2 is a diagram showing a mounting state of a shield ring 79' having a total length of more than 2000 mm according to a reference example. Fig. 9 (a)~ Fig. 9 In (c), the substrate G, the shielding ring 79, the first adjustment member 100, and the second adjustment member 200 are observed from the side, and the relative positional relationship is schematically shown. As shown in the reference example, the shielding ring 79' sometimes warps in the direction orthogonal to the surface direction of the upper surface and the lower surface (upward direction, downward direction) due to the internal stress of the firing process, machining, etc. during the manufacturing process. The warping of the shielding ring 79' has a tendency that the longer the total length of the shielding ring 79' in the long side direction is, the easier it is to warp or the warping becomes larger. For example, Fig. 9 The shield ring 79' shown in (a) has a convex shape in which the middle portion in the longitudinal direction is displaced upward relative to both end portions in the longitudinal direction. Fig. 9 The shield ring 79' shown in (b) has a concave shape in which both ends in the longitudinal direction are displaced upward with respect to the middle portion in the longitudinal direction. Fig. 9The shield ring 79' shown in (c) is wavy (sinusoidal) with a combination of concave and convex along the longitudinal direction. Thus, it is difficult to adjust the gap H between the upper surface of the shield ring 79' having various shapes of warping and the lower surface of the substrate G to a constant interval.

[0116] The substrate mounting table 70 for mounting a substrate G of the sixth generation or later having a plane size of about 1500 mm×1800 mm has a long side length of, for example, 2000 mm or more. If the shield ring 79' is also set to a continuous length in a manner consistent with the long side, the adjustment of the gap H may become difficult due to the occurrence of the above-mentioned warping. Therefore, in the second embodiment, the shield ring and the first ring member 475 arranged around the substrate G are used. Fig.10 The gap adjustment structure 400 shown can adjust the gap H to a substantially constant gap.

[0117] [Second embodiment]

[0118] Fig.10 It is a diagram showing a gap adjustment structure 400 according to the second embodiment. Fig.10 (a) is a top view of the interval adjustment structure 400. Fig.10 (b) is Fig.10 (a) is a cross-sectional view of the Xb-Xb line.

[0119] Fig.10 (c) is Fig.10 (a) is a cross-sectional view taken along the line Xc-Xc. The interval adjustment structure 400 includes, for example, a shield ring 479 and a shield ring 480 which are divided into two parts, and a positioning member 410 for positioning the longitudinal direction positions of the shield rings 479 and 480. In addition, the interval adjustment structure 400 includes: a first ring member 475 which supports the height direction of the positioning member 410; a side shield 476 which is arranged on the outer peripheral side of the first ring member 475; and a first adjustment member 100 and an axis member 102 which are arranged at a position across the positioning member 410.

[0120] The shielding ring 479 has a lower surface 479a extending along the long side direction of the shielding ring 479 and a recessed portion 479b provided near the lower surface 479a of the shielding ring 480. The shielding ring 480 has a lower surface 480a extending along the long side direction of the shielding ring 480 and a recessed portion 480b provided near the lower surface 480a of the shielding ring 479. Each recessed portion 479b, 480b is formed, for example, as a circular hole with a diameter of about φ5mm to φ15mm. In this example, the diameter of each recessed portion 479b, 480b is set to φ8mm. In addition, the shape of each recessed portion 479b, 480b is not limited to a circular hole, and may be, for example, an oblong hole or a rectangular hole.

[0121] The positioning member 410 has, for example, a rectangular flat plate-shaped base 410a and two protrusions 410b protruding from the upper surface of the base 410a. Each protrusion 410b is cylindrical and smaller than each recess 479b, 480b. In addition, the shape of each protrusion 410b is not limited to a cylindrical shape as long as it is consistent with the shape of each recess 479b, 480b, and can also be, for example, an elliptical column, a rectangular column, etc. In addition, the positioning member 410 can also be a structure having more than three protrusions 410b. The shielding rings 479, 480 can set the number and setting position of each recess 479b, 480b according to the number and setting position of the protrusions 410b.

[0122] The first ring member 475 has a retaining groove 475a on the upper surface for accommodating the positioning member 410. During assembly, the operator accommodates the positioning member 410 in the retaining groove 475a, and respectively arranges the shielding rings 479 and 480 in such a manner that the recessed portion 479b of the shielding ring 479 and the recessed portion 480b of the shielding ring 480 are mounted relative to the two protrusions 410b. Thus, the positioning member 410 can position the shielding rings 479 and 480 in an integral manner. However, if the positioning member 410 supports the height direction of the shielding rings 479 and 480, it is difficult to adjust the height of the shielding rings 479 and 480 using the first adjustment member 100. Therefore, the interval adjustment structure 400 is configured to have a gap so that the protruding end faces of each protrusion 410b of the positioning member 410 do not contact the bottom surfaces of the recessed portions 479b and 480b of the shielding rings 479 and 480. For example, it is preferable to adjust the depth of the retaining groove 475a in such a manner that the gap becomes greater than 0.1 mm.

[0123] The first adjustment member 100 and the shaft member 102 are provided as a pair with the positioning member 410 interposed therebetween. Thus, one of the first adjustment member 100 and the shaft member 102 is in contact with the shielding ring 479, and the other of the first adjustment member 100 and the shaft member 102 is in contact with the shielding ring 480. One of the first adjustment member 100 and the shaft member 102 can adjust the interval of the gap between the upper surface 479c of the shielding ring 479 and the lower surface of the substrate G at the adjacent position of the positioning member 410. Similarly, the other of the first adjustment member 100 and the shaft member 102 can adjust the interval of the gap between the upper surface 480c of the shielding ring 480 and the lower surface of the substrate G at the adjacent position of the positioning member 410.

[0124] Here, refer to Fig.11 The significance of dividing the shield ring placed on one side of the substrate mounting table 70 into two shield rings 479 and 480 will be described. Fig.11 : is a graph measuring the distance between the lower surface of the substrate G and the upper surface of the shield ring at each position in the long side direction of the shield ring. Fig.11(a) is the result obtained by preparing three shield rings each having a length of 2241 mm in the long side direction and measuring each of them. The solid line, dotted line, and two-dot chain line in the graph distinguish the individual measurement results. Fig.11 (b) is the result obtained by preparing two shielding rings with a length of 1537.5 mm in the long side direction and measuring them separately. The solid and dotted lines in the graph are used to distinguish the individual measurement results. Fig.11 The vertical axis is the distance between the lower surface of the substrate G and the upper surface of the shielding ring. Fig.11 The horizontal axis represents each position of the shield ring as a distance from a reference (one end).

[0125] like Fig.11 As shown in (a), among the shield rings with a length of 2241 mm in the long side direction, the gaps between the three shield rings and the lower surface of the substrate G are discrete in the range of -0.55 mm to -0.15 mm. That is, the shield ring with a length of 2241 mm has a large gap due to its long side direction. Fig. 9 The warping described in the above description causes a deviation in the distance from the lower surface of the substrate G.

[0126] In contrast, Fig.11 As shown in (b), in the shield ring with a length of 1537.5 mm in the long side direction, the gap between the two shield rings and the lower surface of the substrate G is within a range of about -0.25 mm to -0.20 mm, and the deviation is small (the gap between the lower surface of the substrate G is stable). That is, the shield ring with a length of 1537.5 mm is short in the long side direction, so the warping is suppressed and the gap between the shield ring and the lower surface of the substrate G does not deviate.

[0127] Therefore, for the shielding ring, if the length in the long side direction is set as short as possible, the spacing of the gap H between the shielding ring and the lower surface of the substrate G will not deviate. For example, each shielding ring placed on each side of the substrate mounting table 70 can be set to a length of 1537.5 mm or less by being divided at the middle position of each side of the substrate mounting table 70. Thus, each shielding ring 479, 480 can be well adjusted to have a spacing with the substrate G using the first adjustment member 100. In addition, as long as the shielding rings 479, 480 are both 1537.5 mm or less, the division position of the shielding rings 479, 480 can also be offset from the middle position of each side. In addition, the shielding ring arranged on one side of the substrate mounting table 70 can also be divided into three or more.

[0128] Furthermore, the retaining groove 475a of the first ring member 475 can also be configured to allow the positioning member 410 to slide in space. When a thermal expansion difference occurs in the substrate mounting table 70, the shielding rings 479, 480 or the first ring member 475 due to temperature adjustment or the like, the positioning member 410 can slide in the thermal expansion direction of the shielding rings 479, 480 and the first ring member 475. The thermal expansion direction is the long side direction of the shielding rings 479, 480. Thus, it is possible to prevent the adjacent shielding rings 479, 480 and the positioning member 410 from being damaged by load. For example, as the distance of the space for absorbing thermal expansion of the retaining groove 475a in this case, when the shielding rings 479, 480 are ceramics, the linear expansion coefficient is set to 7.2×10 -6 [mm / °C], when the length of the shield rings 479 and 480 is set to 1537.5 mm and the temperature rises to 243°C, it is about 2.7 mm. In short, the distance of the space of the holding groove 475a can be set to an appropriate value according to the material, length, target temperature, etc. of the shield rings 479 and 480.

[0129] In addition, in the plasma processing apparatus 10, when a conductive member (for example, the substrate 71 of the substrate mounting table 70) is exposed to the plasma during substrate processing, a discharge phenomenon occurs toward the conductive member, and abnormal discharge may occur. In order to prevent the exposure of the conductive member, it is effective to provide a stepped maze structure 481 at the boundary of the shield rings 479 and 480, and to form an island shape 410c on the upper surface of the positioning member 410 so that the substrate 71 cannot be seen from the gap between the overlapping parts of the shield rings 479 and 480 when viewed from the side.

[0130] Fig.12 4 is a diagram showing an example of the shield ring 479, the step-shaped labyrinth structure 481 of the shield ring 480, and the island shape 410c of the positioning member 410. Fig.12 (a) and Fig.12 As shown in (b), the shield ring 479 has a lower convex portion 479f as one side of the labyrinth structure 481, and has an upper notch portion (not shown). The shield ring 480 has an upper convex portion 480f as the other side of the labyrinth structure 481, and has a lower notch portion (not shown). In the state where the labyrinth structure 481 is formed, the upper convex portion 480f is arranged in the upper notch portion, and the lower convex portion 479f is arranged in the lower notch portion.

[0131] It is preferred that the height 410e of the island shape 410c is higher than the height 479e of the lower protrusion 479f of the shield ring 479 and the height 480e of the lower notch of the shield ring 480. In addition, the protrusion amount 479d of the lower protrusion 479f and the protrusion amount 480d of the upper protrusion 480f are preferably set to 5 mm or more, and the length 410d of the island shape 410c along the long side direction is preferably set to 15 mm or more. In the labyrinth structure 481, the lower protrusion 479f and the upper protrusion 480f overlap by more than 5 mm in the long side direction of the shield rings 479 and 480, and the island shape 410c overlaps by more than 5 mm at the adjacent positions on both sides.

[0132] Furthermore, the lower surfaces 479a and 480a of the shield rings 479 and 480 are provided with receiving portions 479g and 480g for receiving the island shape 410c, respectively (see Fig.12 (c) double dotted line). When the island shape 410c is stored in the storage parts 479g and 480g, the upper surface 410cT of the island shape 410c does not contact the top surfaces 479gT and 480gT of the storage parts 479g and 480g. Thus, even in the case of the labyrinth structure 481, the height of each of the shield rings 479 and 480 can be well adjusted by the first adjustment member 100.

[0133] In addition, the shape of the labyrinth structure 481 is not limited to the above-mentioned shape, and may be formed into a staircase shape with two or more layers, for example. Fig.12 As shown in (c), the island shape 410c is preferably provided adjacent to the base material 71 of the substrate mounting table 70. However, the island shape 410c may be provided at a position away from the base material 71. Furthermore, the island shape 410c may be provided across the base portion 410a of the positioning member 410 along the width direction (direction perpendicular to the long side direction) of the shield rings 479 and 480.

[0134] It should be understood that the adjustment components, substrate processing devices, and adjustment methods of the embodiments disclosed herein are illustrative and non-restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the attached claims and their gist. The matters described in the above-mentioned multiple embodiments can also adopt other structures within the scope of non-contradiction, and can also be combined within the scope of non-contradiction.

[0135] In the above embodiments, the case of application to an inductively coupled plasma device having a metal window is described, but the present invention is not limited thereto and may be applied to an inductively coupled plasma device having a dielectric window, or to a plasma device of another type such as a capacitively coupled plasma device or a microwave plasma device. In addition, the present invention is described for a rectangular substrate such as a glass substrate for manufacturing FPD, but the present invention is not limited thereto and may be applied to a case of placing a circular substrate such as a semiconductor wafer on a cylindrical mounting table, or to mounting tables and substrates of other shapes.

Claims

1. An adjustment member for adjusting the interval between two structural members, wherein: The adjustment member has an annular main body having a first center. The subject has: An inner peripheral surface having a plurality of inner peripheral recesses arranged in a circumferential direction, each of the plurality of inner peripheral recesses being formed by a curve; an outer peripheral surface surrounding the inner peripheral surface from the outside; and The plurality of interval adjustment portions have a plurality of body widths located between the outer peripheral surface corresponding to each of the plurality of inner peripheral recesses and each of the plurality of inner peripheral recesses, the plurality of body widths having mutually different widths.

2. The adjustment member according to claim 1, wherein: The outer peripheral surface has a plurality of outer peripheral convex portions arranged in a circumferential direction corresponding to each of the plurality of inner peripheral concave portions, and each of the plurality of outer peripheral convex portions is formed by a curved line.

3. The adjustment member according to claim 2, wherein: The inner peripheral concave portion and the outer peripheral convex portion forming each of the plurality of main body widths are arcs having a common second center and different radii of curvature.

4. The adjustment member according to claim 3, wherein: When a virtual circle sharing the first center with the main body is set inside the inner peripheral surface, the plurality of second centers are all set on the circumference of the virtual circle.

5. The adjustment member according to claim 3, wherein: The curvature radius of the circular arcs of the plurality of inner circumferential recesses is the same as that of the inner circumferential recesses. The curvature radii of the circular arcs of the plurality of outer peripheral convex portions are different from each other.

6. The adjustment member according to claim 3, wherein: The curvature radii of the circular arcs of the plurality of inner circumferential recesses are different from each other. The curvature radii of the circular arcs of the plurality of outer peripheral convex portions are the same as or different from each other.

7. The adjustment member according to any one of claims 1 to 6, wherein: The main body is a petal-shaped annular component.

8. A substrate processing device, comprising: a processing container that receives the substrate; as well as A mounting table is provided to mount the substrate inside the processing container, wherein: The mounting platform has: a base material having a mounting surface on which the substrate is mounted; A first ring member of an annular or cylindrical shape, which surrounds the substrate; an annular second ring member surrounding the mounting surface and disposed on the first ring member; a shaft member disposed between the base material and the first ring member; and an adjustment member, the shaft member penetrates through the adjustment member, at least a portion of the outer peripheral surface of the adjustment member protrudes from the upper surface of the first ring member and contacts the lower surface of the second ring member, The adjustment member has an annular main body having an opening through which the shaft member passes and having a first center. The subject has: An inner peripheral surface having a plurality of inner peripheral recesses arranged in a circumferential direction, each of the plurality of inner peripheral recesses being formed by a curve; an outer peripheral surface surrounding the inner peripheral surface from the outside; and The plurality of interval adjustment portions have a plurality of body widths located between the outer peripheral surface corresponding to each of the plurality of inner peripheral recesses and each of the plurality of inner peripheral recesses, the plurality of body widths having mutually different widths.

9. The substrate processing apparatus according to claim 8, wherein: Regardless of the positions of the plurality of interval adjusting portions of the adjustment member, the upper surface of the second ring member is located below the placement surface.

10. The substrate processing apparatus according to claim 8, wherein: The shaft member is a connecting member that connects the base material and the first ring member.

11. The substrate processing apparatus according to claim 8, wherein: The second ring member is divided into two or more parts on one side of the outer periphery of the mounting table. A positioning member is provided between the lower surface of each of the divided second ring members and the first ring member, A pair of the adjustment members is arranged with the positioning member interposed therebetween.

12. The substrate processing apparatus according to claim 11, wherein: The positioning member has two or more protrusions, A recessed portion is provided on the lower surface of each of the divided second ring members, and the second ring member can be positioned by inserting the protruding portion into the recessed portion.

13. The substrate processing apparatus according to claim 11, wherein: The length in the longitudinal direction of each of the divided second ring members is 1537.5 mm or less.

14. An adjustment method for adjusting the interval between two structural members constituting a substrate processing device, wherein: The substrate processing device comprises: a processing container that accommodates the substrate; and a mounting table for mounting the substrate inside the processing container, The mounting platform has: a base material having a mounting surface on which the substrate is mounted; A first ring member of an annular or cylindrical shape, which surrounds the substrate; an annular second ring member surrounding the mounting surface and mounted on the first ring member; a shaft member disposed between the base material and the first ring member; and an adjustment member, the shaft member penetrates through the adjustment member, at least a portion of the outer peripheral surface of the adjustment member protrudes from the upper surface of the first ring member and contacts the lower surface of the second ring member, The adjustment member has an annular main body having an opening through which the shaft member passes and having a first center. The subject has: An inner peripheral surface having a plurality of inner peripheral recesses arranged in a circumferential direction, each of the plurality of inner peripheral recesses being formed by a curve; an outer peripheral surface surrounding the inner peripheral surface from the outside; and a plurality of interval adjustment portions having a plurality of body widths located between the outer peripheral surface corresponding to each of the plurality of inner peripheral recesses and each of the plurality of inner peripheral recesses, the plurality of body widths having mutually different widths, By rotating the adjustment member around the shaft member, any one of the plurality of interval adjustment portions comes into contact with the lower surface of the second ring member, thereby adjusting the interval between the first ring member and the second ring member.

15. The adjustment method according to claim 14, wherein: Regardless of the positions of the plurality of interval adjusting portions of the adjustment member, the upper surface of the second ring member is located below the placement surface.

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