System and method for wafer wet process

Abstract

The invention relates to a system and a method for wafer wet process. The method comprises the following steps: placing a wafer in a process tank filled with a process solution; after the wafer is placed in the process tank, determining whether the wafer is in the process tank after a preset process time; and in response to a determination that the wafer is in the process tank after the preset process time, discharging the process solution from the process tank while the wafer is in the process tank.

Description

Technical Field

[0001] The present disclosure relates to systems and methods for wafer wet processing. Background Art

[0002] Semiconductor devices are formed on wafers using a manufacturing process that includes several wet processing operations such as etching operations and rinsing operations. The wet processing operation places the wafer in a tank filled with liquid. The liquid in the tank can react with other materials such as the film or etched or removed. The wet processing operation ends with a robotic arm taking the wafer out of the tank in a timely manner. Summary of the invention

[0003] According to some embodiments of the present disclosure, the method includes the following steps: placing a wafer in a process tank filled with a process solution; after placing the wafer in the process tank, determining whether the wafer is in the process tank after a preset process time; and in response to determining that the wafer is in the process tank after the preset process time, draining the process solution from the process tank while the wafer is in the process tank.

[0004] According to some embodiments of the present disclosure, the method includes the following steps: placing a wafer in a process tank of a wet process equipment, wherein the process tank is filled with a process solution; providing a trigger signal to a control module; and using the control module to perform a wafer rescue process after the control module receives the trigger signal, wherein the wafer rescue process includes the following steps: draining the process solution from the process tank.

[0005] According to some embodiments of the present disclosure, a system includes a wet process equipment and a control module. The wet process equipment includes a process tank, a discharge pipeline fluidly connected to the process tank, and a first pneumatic valve coupled to the discharge pipeline. The control module is located outside the wet process equipment. The control module includes a first air pipe interface fluidly connected to the first pneumatic valve. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] The various aspects of the present disclosure can be best understood when the following detailed description is read in conjunction with the accompanying drawings. It should be noted that, in accordance with standard practice in the industry, various features are not drawn to scale. In fact, the size of various features may be arbitrarily increased or reduced for clarity of discussion.

[0007] Figure 1 is a flow chart of a wet processing method according to some embodiments of the present disclosure;

[0008] Figure 2A and Figure 2B are cross-sectional views of various stages of manufacturing a semiconductor device according to some embodiments of the present disclosure;

[0009] FIG. 3A to FIG. 3C is a schematic cross-sectional view of a wet etching apparatus at various stages of a wet processing method according to some embodiments of the present disclosure;

[0010] Figure 4 A wafer rescue process for ending a wet etching process according to some embodiments of the present disclosure;

[0011] Figure 5A and Figure 5B are cross-sectional views of various stages of manufacturing a semiconductor device according to some embodiments of the present disclosure;

[0012] FIG. 6A to FIG. 6C is a schematic cross-sectional view of a rinsing apparatus at various stages of a wet processing method according to some embodiments of the present disclosure;

[0013] Figure 7 A wafer rescue process for ending a wet rinse process according to some embodiments of the present disclosure;

[0014] Figure 8 is a block diagram of a system for wafer wet processing according to some embodiments of the present disclosure;

[0015] Fig.9A is a block diagram of a system for wafer wet processing in an automatic mode according to some embodiments of the present disclosure;

[0016] Fig. 9B is a block diagram of a system for wafer wet processing in manual mode according to some embodiments of the present disclosure;

[0017] Fig. 9C is a block diagram of a system for wafer wet processing in emergency mode according to some embodiments of the present disclosure;

[0018] Fig. 10A is a diagram of a control module according to some embodiments of the present disclosure;

[0019] Fig. 10B for Fig.9A A top view of an air duct output panel of a control module;

[0020] Fig. 10C for Fig.9A A top view of a manual button panel of a control module;

[0021] Fig.11 is a flow chart of a method for automatically controlling a wet etching / rinsing device according to some embodiments of the present disclosure;

[0022] Fig.12 is a diagram illustrating various operations of a control module in a manual mode according to some embodiments of the present disclosure;

[0023] Fig.13 is a circuit diagram of an emergency mode according to some embodiments of the present disclosure.

[0024]

Explanation of symbols

[0025] 110:Semiconductor substrate

[0026] 110a: Active area

[0027] 120: Isolation Structure

[0028] 130: Gate dielectric layer

[0029] 130': Gate dielectric

[0030] 140: Gate electrode

[0031] 150:Hard Mask

[0032] 150': Gate spacer

[0033] 160: Etching stop layer

[0034] 170: Interlayer dielectric layer

[0035] 180: Contact

[0036] 190: Conductive characteristics

[0037] 192: First metal layer

[0038] 194: Second metal layer

[0039] 196: The third metal layer

[0040] 200:Wet etching equipment

[0041] 210, 310: process tank

[0042] 212: Inner groove

[0043] 214:External groove

[0044] 220, 320: Wafer holder

[0045] 230, 330: Supply nozzle

[0046] 240: Etching solution source

[0047] 250: Water

[0048] 260, 360, WAC: Controller

[0049] 270, 370: sink

[0050] 300: Flushing equipment

[0051] 340: Flushing solution source

[0052] 350: Air source

[0053] 400: System

[0054] 410: Central Server

[0055] 420: Monitoring device

[0056] 500: Control module

[0057] 500F:Front panel

[0058] 500R: Rear panel

[0059] 501: Power input jack

[0060] 502: Controller power switch

[0061] 503: Interlock interface

[0062] 504: Air pipe output panel

[0063] 504DV, 504GO, 504SV: Air pipe interface

[0064] 504GI: Gas inlet

[0065] 505: Communication interface

[0066] 506: Emergency mode trigger signal interface

[0067] 507: Microcontroller unit board

[0068] 508: Solenoid valve

[0069] 509: LCD touch screen

[0070] 510: Manual button panel

[0071] 510DB, 510SB: Manual operation button

[0072] 511:Buzzer

[0073] 512: Mode indicator

[0074] 513: Mode switch

[0075] 514: Alarm and program reset button

[0076] 515:Metal shell

[0077] 590: Control Logic

[0078] #1, #2, #3, #4, #5: Manual mode operation

[0079] A1: Alarm signal

[0080] AM, M: Method

[0081] AM1-AM18, S1, S2, S3, S312, S314, S322, S324: Step BS: Solution

[0082] CH1~CH4: Channel

[0083] CL: CPU Error Detection Pipeline

[0084] CS:Signal

[0085] ER: CPU error

[0086] ES: Etching solution

[0087] FS: Supporting element

[0088] GL1, GL2: Gas pipeline

[0089] GS1, GS2, PG: Gas

[0090] L21, L22, L31, L32, L33: pipeline

[0091] NS:Spray nozzle

[0092] PL: Power Rail

[0093] PR: Residue

[0094] RS: Rinse solution

[0095] TS1, TS2: trigger signal

[0096] V21, V31, V32, V33, WAV1, WAV2: Flow control device

[0097] V22, V23: Flow control device, valve

[0098] W: Wafer

[0099] WA: Wet Process Equipment

[0100] WS: Inactive solution DETAILED DESCRIPTION

[0101] The following disclosure provides many different embodiments or examples for implementing the different features of the provided subject matter. The specific examples of components and configurations described below are for the purpose of simplifying the disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description, forming a first feature above or on a second feature may include an embodiment in which the first feature and the second feature are formed in direct contact, and may also include an embodiment in which an additional feature may be formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. In addition, the disclosure may repeat reference numerals and / or letters in various examples. This repetition is for the purpose of simplicity and clarity, and does not itself indicate the relationship between the various embodiments and / or configurations discussed.

[0102] In addition, for ease of description, spatially relative terms such as "under...", "below", "lower", "above", "upper" and the like may be used herein to describe the relationship of one element or feature to another element or feature as illustrated in the figure. In addition to the orientation depicted in the figure, spatially relative terms are also intended to cover different orientations of the device in use or operation. The device can be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptors used herein can also be interpreted accordingly. As used herein, "approximately", "about", "approximately" or "substantially" should generally refer to within 20% of a given value or range, or within 10%, or within 5%. The numerical values ​​given herein are approximate, which means that in the absence of explicit provisions, the terms "approximately", "about", "approximately" or "substantially" can be inferred.

[0103] Figure 1 Flow chart of wet processing method M according to some embodiments of the present disclosure. Wet processing method M comprises the following steps: in step S1, a wafer etching / rinsing process is performed by immersing the wafer in a process tank containing a liquid; in step S2, it is determined whether the wafer is in the process tank after a preset process time; in step S3, when the wafer is in the process tank after the preset process time, a wafer rescue process is performed to end the wet etching / rinsing process; when the wafer is not in the process tank after the preset process time, the method returns to step S1. It should be understood that in Figure 1 Additional steps may be provided before, during, and after the steps shown in the method, and some of the steps described may be replaced or eliminated for additional embodiments of the method. The order of operations / processes may be interchangeable. Figure 2A and Figure 4 The exemplary embodiment shown in further discusses the wet processing method M for the wet etching process. Figure 5A and Figure 7 The exemplary embodiment shown in further discusses a wet processing method M for a wet rinse process.

[0104] Figure 2A and Figure 2B are cross-sectional views of various stages of manufacturing a semiconductor device according to some embodiments of the present disclosure. Figure 2A . A semiconductor substrate 110 is provided. An isolation structure 120 is formed above the semiconductor substrate 110 for defining an active region 110a. A gate dielectric layer 130 is formed above the semiconductor substrate 110. A gate stack including a gate electrode 140 and a hard mask 150 is formed above the gate dielectric layer 130. The semiconductor substrate 110 may include a suitable semiconductor material, such as silicon. The isolation structure 120 may include one or more suitable dielectric materials, such as silicon oxide, silicon nitride, silicon oxynitride, the like, or a combination thereof. The gate dielectric layer 130 may include a suitable dielectric material, such as silicon oxide, the like, or a combination thereof. The gate electrode 140 may include polysilicon. The hard mask 150 may include a suitable hard mask material, such as silicon nitride.

[0105] refer to Figure 2B The gate dielectric layer 130 (refer to Figure 2A ) is patterned into a gate dielectric 130'. The gate dielectric layer 130 is removed by a wet etching process (refer to Figure 2A ) is not covered by the hard mask 150, and the gate dielectric layer 130 (reference Figure 2A ) below the hard mask 150 remains and forms the gate dielectric 130'. When patterning the gate dielectric layer 130, a Figure 1 The wet processing method M described in .

[0106] refer to Figure 1 , Figure 2B and Figure 3A The method starts at step S1 , where a wet etching process is performed by immersing the wafer W in a process tank 210 containing a liquid (eg, etching solution ES). FIG. 3A to FIG. 3C FIG. 2 is a schematic cross-sectional view of a wet etching apparatus 200 at various stages of a wet processing method M according to some embodiments of the present disclosure. A wafer W includes Figure 2A and Figure 2B, one or more semiconductor substrates 110 in the process tank 210. For example, under the control of the controller 260, the etching solution ES is supplied from the etching solution source 240 to the process tank 210 via the flow control device V21 and the supply line L21. In order to remove the silicon oxide layer, the etching solution ES may be HF and a buffered oxide etchant (BOE). In some alternative embodiments, the etching solution ES may be an ammonia-peroxide mixture (APM) (e.g., a mixture of NH4OH, H2O2 and water), H3PO4, the like, or a combination thereof. If the wafer W is immersed for too long, the portion of the gate dielectric layer 130 below the hard mask 150 may be laterally etched, and an over-etching problem may occur in the gate dielectric 130', which may make the gate dielectric 130' susceptible to failure. In order to avoid the over-etching problem, a preset process time for immersing the wafer W in the process tank 210 may be pre-determined. The preset process time may be pre-determined according to the process requirements. For example, depending on the process requirements, for a wet etching process, the preset process time may be in the range of about 1 second to about 30 minutes. When the wafer process time unexpectedly exceeds the preset time, the preset process time may be modified by the tolerance time before the wafer rescue process. The preset process time may also be referred to as the etching duration of the wet etching process.

[0107] The method proceeds to step S2, and after placing the wafer W in the process tank 210, a determination is made as to whether the wafer W is in the process tank 210 at a time point after a preset process time. For example, a suitable sensor may be used to detect the presence of the wafer W in the process tank 210. If the determination determines that the wafer W is not in the process tank 210 at a time point after the preset process time, the method returns to step S1. If the determination determines that the wafer W is in the process tank 210 at a time point after the preset process time, a wafer rescue process is performed in step S3 to end the wet etching process, which can avoid the over-etching problem. In the presently disclosed embodiment of the wet etching process, the wafer rescue process in step S3 may include steps S312 and S314, such as Figure 4 Described in .

[0108] refer to Figure 4 and Figure 3B The method continues to step S312, in which the liquid (e.g. Figure 3A For example, under the control of the controller 260, the etching solution ES is discharged from the process tank 210 (eg, the inner tank 212 and / or the outer tank 214) via the flow control device V23 and the discharge line L23. Figure 3AThe duration of draining the etching solution ES from the process tank 210 may be in the range of about 10 seconds to about 300 seconds. For example, to drain BOE from the process tank 210, the duration may be in the range of about 10 seconds to about 30 seconds. For example, to drain APM from the process tank 210, the duration may be in the range of about 30 seconds to about 60 seconds. For example, to drain H3PO4 from the process tank 210, the duration may be in the range of about 120 seconds to about 300 seconds.

[0109] refer to Figure 4 and Figure 3C The method proceeds to step S314, in which an inactive solution WS is supplied to the process tank 210. The inactive solution WS is inactive to the wafer W. For example, the inactive solution WS may be deionized (DI) water. For example, the etching solution ES (see FIG. 1 ) is discharged from the process tank 210. Figure 3A ), under the control of the controller 260, the inactive solution WS is supplied from the water source 250 to the process tank 210 (e.g., the inner tank 212) via the flow control device V22 and the supply line L22. The duration for supplying the inactive solution WS to the process tank 210 may be in the range of about 40 seconds to about 120 seconds.

[0110] Through the wafer rescue process including steps S312 and S314 , the wafer W in the process tank 210 is separated from the etching solution ES, thereby solving the over-etching problem.

[0111] exist FIG. 3A to FIG. 3C , the wet etching apparatus 200 includes a process tank 210, a wafer holder 220, a supply nozzle 230, an etching solution source 240, a water source 250, a controller 260, a water tank 270, flow control devices V21 to V23, pipelines L21 to L23 and a supporting element FS.

[0112] The process tank 210 stores an etching solution ES. The process tank 210 includes an inner tank 212 and an outer tank 214. The etching solution ES overflowing from the inner tank 212 flows into the outer tank 214. The liquid level in the outer tank 214 is kept lower than the liquid level in the inner tank 212. The wafer holder 220 is disposed in the inner tank 212 for holding one or more wafers W. The process tank 210 may be fixed in a water tank 270 by a supporting element FS. The water tank 270 may contain a suitable solution BS for buffering the etching solution ES. For example, the solution BS may be DI water.

[0113] The supply nozzle 230 is disposed in the inner tank 212 and fluidly connected to the outer tank 214 through a suitable circulation line having a pump. By driving the pump, a circulation flow of a liquid (e.g., etching solution ES or deionized water) is formed, which flows from the outer tank 214 through the circulation line and the supply nozzle 230 into the inner tank 212. The arrow adjacent to the supply nozzle 230 indicates the flow direction of the etching solution ES from the supply nozzle 230.

[0114] The etching solution supply system includes an etching solution source 240, a supply line L21 coupled to the etching solution source 240, and a flow control device V21 coupled to the supply line L21. The etching solution source 240 includes a storage tank for storing the etching solution ES. The etching solution source 240 provides the etching solution ES to the process tank 210 (e.g., the inner tank 212 and / or the outer tank 214) via the flow control device V21 and the supply line L21.

[0115] The water supply system includes a water source 250, a supply line L22 coupled to the water source 250, and a flow control device V22 coupled to the supply line L22. The water source 250 includes a storage tank storing water such as deionized water (DI water). The water source 250 provides water to the inner tank 212 via the flow control device V22 and the supply line L22.

[0116] One or more drain lines L23 are fluidly coupled to the bottom of the inner tank 212 and / or the bottom of the outer tank 214. For example, the inner tank 212 and the outer tank 214 have drain holes at their bottoms, and the drain lines L23 are fluidly coupled to the drain holes. A flow control device V23 is coupled to the drain lines L23. Liquid (e.g., etching solution ES) can be drained from the inner tank 212 and / or the outer tank 214 via the flow control device V23 and the drain lines L23.

[0117] In the disclosed embodiment, the flow control devices V21 to V23 may be pneumatic valves. In some other embodiments, the flow control devices V21 to V23 may be shut-off valves, flow control valves, flow meters, the like, or a combination thereof. The controller 260 may control the flow control devices V21 to V23 for adjusting the flow rate of the pipelines L21 to L23. The controller 260 may include a computer-readable storage medium and a processor coupled to the computer-readable storage medium. The computer-readable storage medium stores a program for controlling the various steps of the wet processing method M performed in the wet etching device 200. The controller 260 controls the operation of the wet etching device 200 by using a processor that reads and executes the program stored in the storage medium. The program may be a program that has been stored in a computer-readable storage medium, or may be a program in a storage medium that has been installed to the controller 260.

[0118] Figure 5A and Figure 5Bare cross-sectional views of various stages of manufacturing a semiconductor device according to some embodiments of the present disclosure. Figure 5A . As mentioned above, an isolation structure 120 is formed over the semiconductor substrate 110 for defining the active region 110a. A gate dielectric 130' and a gate electrode 140 are formed over the active region 110a. A gate spacer 150' is formed on opposite sides of the stack of the gate dielectric 130' and the gate electrode 140. An etch stop layer 160 and an interlayer dielectric layer 170 may be deposited over the semiconductor substrate 110. A contact 180 is formed in the interlayer dielectric layer 170 over the gate electrode 140 and the source / drain regions of the active region 110a. A conductive feature 190 is formed over the contact 180. The conductive feature 190 may serve as a conductive feature (e.g., a wire) in a plurality of metallization layers of an interconnect structure.

[0119] The conductive feature 190 may include a first metal layer 192, a second metal layer 194, and a third metal layer 196. For example, the first metal layer 192 and the third metal layer 196 are titanium nitride (TiN) layers, and the second metal layer 194 is an aluminum copper (AlCu) layer. Forming the conductive feature 190 may include the following steps: depositing a first TiN film, an AlCu film; depositing a second TiN film in sequence; forming a mask over the film by a photolithography process; and patterning the film through the mask by an etching process. After forming the conductive feature 190, the mask is removed by a stripping process using a suitable stripper. After forming the conductive feature 190, a residue PR may remain on the top surface of the conductive feature 190 and the sidewalls of the conductive feature 190. The residue PR may come from the materials of the mask and the stripper.

[0120] refer to Figure 5B A wet rinse process is performed to remove the residue PR from the top surface of the conductive feature 190 and the sidewalls of the conductive feature 190. Figure 1 The semiconductor substrate 110 is rinsed using the wet processing method M described in the specification.

[0121] refer to Figure 1 , Figure 5B and Fig. 6A The method starts at step S1 , where a wet rinsing process is performed by immersing the wafer W in a process tank 310 containing a liquid (eg, a rinsing solution RS). FIG. 6A to FIG. 6C FIG. 3 is a schematic cross-sectional view of a rinsing apparatus 300 at various stages of a wet processing method according to some embodiments of the present disclosure. Figure 5A and Figure 5B For example, under the control of the controller 360, the rinse solution RS is supplied from the rinse solution source 340 to the process tank 310 via the flow control device V31 and the supply line L31. In some embodiments, the rinse solution RS may be DI water, the like, or a combination thereof.

[0122] The process tank 310 may be a quick dump rinse (QDR) tank, a final rinse (FR) tank, or a dryer (e.g., for Marangoni drying). In some embodiments, the wafer W may be processed by a plurality of wet rinse processes in sequence. For example, a QDR process, a FR process, and a Marangoni dry process are sequentially performed to rinse the wafer W. The QDR process is performed to first remove the residue PR. The FR process is performed after the QDR process to ensure that the residue PR is completely removed. The Marangoni dry process is performed after the FR process to dry the wafer W. In each of the QDR process, the FR process, and the Marangoni dry process, the wafer W is soaked in a rinse solution RS (e.g., DI water). If the wafer W is soaked for too long, the rinse solution RS (e.g., DI water) may consume or etch AlCu (e.g., the second metal layer 194), and an over-immersion problem may occur in AlCu (e.g., the second metal layer 194), which may make the resistivity of the metal line higher. In order to avoid the over-immersion problem, a preset process time may be determined in advance for each wet rinse process. The preset process time may be determined in advance according to the process requirements. For example, the preset process time may be in the range of about 1 second to about 60 minutes for the wet rinse process, depending on the process requirements. When the wafer process time unexpectedly exceeds the preset time, the preset process time may be modified by the tolerance time before the wafer rescue process. The preset process time may also be referred to as the rinse duration of the wet rinse process.

[0123] The method proceeds to step S2, and after placing the wafer W in the process tank 310, a determination is made as to whether the wafer W is in the process tank 310 at a time point after a preset process time. For example, a suitable sensor may be used to detect the presence of the wafer W in the process tank 310. If the determination determines that the wafer W is not in the process tank 310 at a time point after the preset process time, the method returns to step S1. If the determination determines that the wafer W is in the process tank 210 at a time point after the preset process time, a wafer rescue process is performed in step S3 to end the wet rinsing process, which can avoid the problem of over-immersion. In the presently disclosed embodiment of the wet etching process, the wafer rescue process in step S3 may include steps S322 and S324, such as Figure 7 Described in .

[0124] refer to Figure 7 and Figure 6B The method continues to step S322, in which the liquid (e.g. Fig. 6A For example, under the control of the controller 360, the rinse solution RS is discharged from the process tank 310 through the flow control device V33 and the supply line L33. Fig. 6A The duration for discharging the rinsing solution RS from the QDR tank may be in the range of about 5 seconds to about 30 seconds. For example, to discharge the rinsing solution RS from the QDR tank, the duration may be in the range of about 5 seconds to about 10 seconds. For example, to discharge the rinsing solution RS from the FR tank, the duration may be in the range of about 10 seconds to about 30 seconds. For example, to discharge the rinsing solution RS from the dryer tank, the duration may be in the range of about 5 seconds to about 10 seconds.

[0125] refer to Figure 7 and Figure 6C The method proceeds to step S324, in which the process tank 310 is cleaned. For example, after the rinse solution RS (refer to Fig. 6A ), under the control of the controller 360, the gas PG is supplied from the gas source 350 to the spray nozzle NS via the flow control device V32 and the supply line L32, and the spray nozzle NS may spray the gas PG toward the process tank 310, thereby cleaning the process tank 310. The duration for cleaning the process tank 310 may be greater than 100 seconds, such as about 300 seconds.

[0126] Through the wafer salvage process including steps S322 and S324 , the wafer W in the process tank 310 is separated from the rinse solution RS, thereby solving the over-immersion problem.

[0127] exist FIG. 6A to FIG. 6C In the figure, the rinsing apparatus 300 includes a process tank 310, a wafer holder 320, a supply nozzle 330, a rinsing solution source 340, a gas source 350, a controller 360, a water tank 370, flow control devices V31 to V33, pipelines L31 to L33, a spray nozzle NS and a supporting element FS.

[0128] The process tank 310 stores a rinse solution RS. The wafer holder 320 is disposed in the process tank 310 for holding one or more wafers W. The process tank 310 may be fixed in a water tank 370 by a supporting element FS. The water tank 370 may contain a suitable solution BS, such as DI water.

[0129] The supply nozzle 330 is disposed in the process tank 310 in fluid connection with the pump. By driving the pump, a circulation flow of liquid (eg, rinse solution RS) is formed, which flows into the process tank 310. The arrow adjacent to the supply nozzle 330 indicates the flow direction of the rinse solution RS from the supply nozzle 330.

[0130] The rinsing solution supply system includes a rinsing solution source 340, a spray nozzle NS, a supply line L31 coupled between the rinsing solution source 340 and the spray nozzle NS, and a flow control device V31 coupled to the supply line L31. The rinsing solution source 340 includes a storage tank storing a rinsing solution RS. The rinsing solution source 340 provides the rinsing solution RS to the spray nozzle NS via the flow control device V31 and the supply line L31, and the spray nozzle NS can distribute the rinsing solution RS toward the process tank 310.

[0131] The gas supply system includes a gas source 350, a supply line L32 coupled between the gas source 350 and the spray nozzle NS, and a flow control device V32 coupled to the supply line L32. The gas source 350 stores a suitable cleaning gas, such as clean dry air (CDA). For example, the gas source 350 can store nitrogen. Through the flow control device V32 and the supply line L32, the gas source 350 provides water to the spray nozzle NS, and the spray nozzle NS can distribute the cleaning gas toward the process tank 310.

[0132] One or more drain lines L33 are coupled to the bottom of the process tank 310. A flow control device V33 is coupled to the drain line L33. For example, the process tank 310 has a drain hole at its bottom, and the drain line L33 is fluidically coupled to the drain hole. Liquid (e.g., rinse solution RS) can be drained from the process tank 310 via the flow control device V33 and the drain line L33.

[0133] In the disclosed embodiment, the flow control devices V31 to V33 may be pneumatic valves. In some other embodiments, the flow control devices V31 to V33 may be shut-off valves, flow control valves, flow meters, the like, or a combination thereof. The controller 360 may control the flow control devices V31 to V33 for adjusting the flow rate of the pipelines L31 to L33. The controller 360 may include a computer-readable storage medium and a processor coupled to the computer-readable storage medium. The computer-readable storage medium stores a program for controlling each step of the wet processing method M performed in the flushing device 300. The controller 360 controls the operation of the flushing device 300 by using a processor that reads and executes a program stored in a storage medium. The program may be a program that has been stored in a computer-readable storage medium, or may be a program in a storage medium that has been installed to the controller 360.

[0134] Figure 8 FIG. 4 is a block diagram of a system 400 for wafer wet processing according to some embodiments of the present disclosure. The system 400 includes a wet processing apparatus WA, a central server 410, and a control module 500. The wet processing apparatus WA may include various flow control devices WAV1 and WAV2 and a controller WAC. In some embodiments, the wet processing apparatus WA may correspond to FIG. 3A to FIG. 3CThe wet etching device 200 in which the flow control devices WAV1 and WAV2 correspond to FIG. 3A to FIG. 3C The flow control devices V22 and V23 in the controller WAC correspond to FIG. 3A to FIG. 3C In some embodiments, the wet process equipment WA may correspond to FIG. 6A to FIG. 6C The flushing device 300 in which the flow control devices WAV1 and WAV2 correspond to FIG. 6A to FIG. 6C The flow control devices V32 and V33 in the controller WAC correspond to FIG. 6A to FIG. 6C The control module 500 can be in automatic mode (refer to Fig.9A ), manual mode (reference Fig. 9B ) and emergency mode (reference Fig. 9C )

[0135] Fig.9A 4 is a block diagram of a system for wafer wet processing in automatic mode according to some embodiments of the present disclosure. The controller WAC of the wet processing equipment WA may send a real-time signal to the central server 410 to indicate the status of the wet processing equipment WA. For example, the real-time signal is obtained from a sensor that detects the presence of the wafer W in the process tank. In some embodiments, when an adverse condition appears in the real-time signal, the controller WAC of the wet processing equipment WA may send an alarm message / signal A1 to the central server 410 to indicate the abnormal condition of the wet processing equipment WA. Then, the central server 410 may check whether the alarm signal A1 belongs to a designated alarm signal. If the alarm signal A1 belongs to a designated alarm signal, the central server 410 may send a trigger signal TS1 to the control module 500. In automatic mode, the control module 500 may receive a command (e.g., a trigger signal TS1) from the central server 410 and be triggered to terminate wafer loading and perform a wafer rescue procedure.

[0136] In order to terminate wafer loading, for some types of wet process equipment WA, the control module 500 may send a signal CS to the controller WAC of the wet process equipment WA to terminate receiving wafers, thereby terminating wafer loading. For some other types of wet process equipment WA, once the wet process equipment WA sends an alarm signal A1, the wet process equipment may terminate itself.

[0137] Through the wafer rescue procedure, the control module 500 can control the gas flow provided by the gas pipelines GL1 and GL2, thereby controlling the flow control devices WAV1 and WAV2 of the wet process equipment WA through the gas pipelines GL1 and GL2. In some embodiments of the wet etching process, through the wafer rescue procedure, the control module 500 can send gas GS1 through the gas pipeline GL1 to open the flow control device WAV1 (for example, Figure 3BThe flow control device V23 in the process pipe is used to discharge the liquid, such as Figure 3B Then, through the wafer rescue procedure, the control module 500 can send gas GS2 through the gas pipeline GL2 to open the flow control device WAV2 (for example Figure 3C The flow control device V22 in the process pipe is used to supply water to the process pipe, such as Figure 3C These steps of the wafer rescue procedure complete the wafer rescue process in the wet etching process. In some embodiments of the rinsing process, through the wafer rescue procedure, the control module 500 can send gas GS1 through the gas pipeline GL1 to open the flow control device WAV1 (for example Figure 6B The flow control device V33 in the process pipe is used to discharge the liquid, such as Figure 6B Then, through the wafer rescue procedure, the control module 500 can send gas GS2 through the gas pipeline GL2 to open the flow control device WAV2 (for example Figure 6C The flow control device V32 in the process is used to supply gas PG to clean the process pipe, such as Figure 6C These steps of the wafer salvage procedure complete the wafer salvage process in the rinse process.

[0138] Fig. 9B FIG. 5 is a block diagram of a system for wafer wet processing in manual mode according to some embodiments of the present disclosure. In manual mode, the control module 500 may receive commands from a user (e.g., via Fig. 10A In some embodiments, in the manual mode, the control module 500 may receive a command from the user to perform a wafer rescue procedure (e.g., by Fig. 10A The manual button panel 510 and / or the liquid crystal display (LCD) touch screen 509).

[0139] Fig. 9C 4 is a block diagram of a system for wafer wet processing in emergency mode according to some embodiments of the present disclosure. The system 400 may optionally include a monitoring device 420 electrically connected to the controller WAC of the wet processing equipment WA. When the monitoring device 420 detects a power failure in the wet processing equipment WA, the monitoring device 420 sends a trigger signal TS2 to the control module 500 to initiate the emergency mode and trigger the control module 500 to perform a wafer rescue procedure.

[0140] The control module 500 can control the gas flow provided by the gas pipelines GL1 and GL2 through the wafer rescue process, thereby controlling the flow control devices WAV1 and WAV2 of the wet process equipment WA through the gas pipelines GL1 and GL2. Fig.9A As mentioned in the above, in some embodiments of the wet etching process, through the wafer rescue procedure, the control module 500 can send gas GS1 through the gas pipeline GL1 to open the flow control device WAV1 (eg Figure 3B The flow control device V23 in the process pipe is used to discharge the liquid, such as Figure 3B Then, through the wafer rescue procedure, the control module 500 can send gas GS2 through the gas pipeline GL2 to open the flow control device WAV2 (for example Figure 3C The flow control device V22 in the process pipe is used to supply water to the process pipe, such as Figure 3C These steps complete the wafer salvage process in the wet etch process. Fig.9A As mentioned in the above, in some embodiments of the flushing process, through the wafer rescue procedure, the control module 500 may send gas GS1 through the gas line GL1 to open the flow control device WAV1 (eg Figure 6B The flow control device V33 in the process pipe is used to discharge the liquid, such as Figure 6B Then, through the wafer rescue procedure, the control module 500 can send gas GS2 through the gas pipeline GL2 to open the flow control device WAV2 (for example Figure 6C The flow control device V32 in the process is used to supply gas PG to clean the process pipe, such as Figure 6C These steps complete the wafer salvage process in the rinse process.

[0141] Fig. 10A is a diagram of a control module 500 according to some embodiments of the present disclosure. Fig. 10A A plan view of the control module 500 is illustrated, wherein the front view shows a front panel 500F of the control module 500 and the back view shows a rear panel 500R of the control module 500 .

[0142] At the front panel 500F, the control module 500 includes a power input jack 501, a controller power switch 502, an interlock interface 503, an air tube output panel 504, a communication interface 505, and an emergency mode trigger signal interface 506. At the rear panel 500R, the control module 500 includes a liquid crystal display (LCD) touch screen 509, a manual button panel 510, a buzzer 511, a mode indicator 512, a mode switch 513, and an alarm and program reset button 514. The control module 500 further includes a microcontroller unit (MCU) board 507, a set of solenoid valves 508, and a metal housing 515. In some embodiments, the control module 500 may further include a printed circuit board for providing electrical connections between various components of the control module 500.

[0143] The power input jack 501 is an electrical connector for supplying power to various loads of the control module 500, such as the MCU board 507, the solenoid valve 508, the air tube output panel 504, the LCD touch screen 509, the manual button panel 510, the buzzer 511, the mode indicator 512, the mode switch 513, and the alarm and program reset button 514. For example, the power input jack 501 is a power cord socket. The controller power switch 502 manages the power supply by establishing electrical connections from the power input jack 501 to various loads of the control module 500.

[0144] The solenoid valve 508 is an electromechanically operated valve. In some embodiments, the solenoid valve 508 is used to control the air flow from the air pipe output panel 504. For example, when the power is on or off, the solenoid valve 508 is used to cut off or allow the air pipe interface (e.g., Fig. 10B The metal housing 515 is used to accommodate various components of the control module 500, such as the MCU board 507 and the solenoid valve 508.

[0145] In some embodiments, the mode switch 513 is a physical switch for switching the mode of the control module 500. For example, the mode switch 513 can switch from the automatic mode to the manual mode; or from the manual mode to the automatic mode. The mode indicator 512 can display the current mode of the control module 500, such as the automatic mode, the manual mode, or the emergency mode.

[0146] The emergency mode trigger signal interface 506 may be an input interface electrically connected to a monitoring device 420 for monitoring the status of the wet process equipment WA. For example, the monitoring device 420 may be a programmable logic controller (PLC) relay sensor that detects the status of the power supply or CPU error, a time relay sensor that detects a heartbeat signal, or some device that detects other specified signals in the wet process equipment WA. For example, the monitoring device 420 may be electrically connected to a power rail, a CPU error monitoring line, or a heartbeat signal node of the wet process equipment WA. If an electrical or mechanical system failure occurs in the wet process equipment WA, the monitoring device 420 may detect a power failure in the wet process equipment WA or no heartbeat signal in the wet process equipment WA, and then the control module 500 will initiate the emergency mode upon receiving a trigger signal from the monitoring device 420 via the emergency mode trigger signal interface 506.

[0147] The MCU board 507 processes simple signals from various input interfaces and sends a signal to the solenoid valve 508 to control the airflow from the air duct output panel 504. For example, when the control module 500 is in automatic mode, the MCU board 507 may receive a trigger signal TS1 from the central server 410 via the communication interface 505 and send a signal to the solenoid valve 508 to control the airflow from the air duct output panel 504 according to the wafer rescue procedure. The communication interface 505 may be an RJ45 interface. For example, when the control module 500 is in manual mode, the MCU board 507 may process a simple signal from the manual button panel 510 and send a signal to the solenoid valve 508 to control the airflow from the air duct output panel 504 according to the user's command. For example, when the control module 500 is in emergency mode, the MCU board 507 can receive the trigger signal TS2 from the monitoring device 420 via the emergency mode trigger signal interface 506 and send a signal to the solenoid valve 508 to control the airflow from the air pipe output panel 504 according to the wafer rescue procedure.

[0148] The MCU board 507 may include a computer-readable storage medium and a processor coupled to the computer-readable storage medium. The computer-readable storage medium may store a wafer rescue program that controls various steps of a wet processing process performed in the wet etching apparatus 200 and / or the rinsing apparatus 300. For example, in some embodiments of the wet etching process, the wafer rescue program includes outputting an air flow from the air pipe interface 504DV during a duration for discharging the etching solution ES and outputting an air flow from the air pipe interface 504SV during a duration for supplying the inactive solution WS. In some embodiments of the wet etching process, the wafer rescue program includes outputting an air flow from the air pipe interface 504DV during a duration for discharging the rinsing solution RS and outputting an air flow from the air pipe interface 504GO during a duration for cleaning the process tank. The MCU board 507 controls the operation of the wet etching apparatus 200 and / or the rinsing apparatus 300 by using a processor that reads and executes the wafer rescue program stored in the storage medium. The wafer rescue program may be a wafer rescue program stored in a computer-readable storage medium, or may be a wafer rescue program installed in a storage medium of the MCU board 507 .

[0149] In some embodiments, the MCU board 507 may receive signals from the mode switch 513 and the emergency mode trigger signal interface 506 in advance, and thus, in the automatic mode (refer to Fig.9A ), manual mode (reference Fig. 9B ) and emergency mode (reference Fig. 9C ) to determine the operating mode. Then, the MCU board 507 can send a signal to the solenoid valve 508 to control the air flow from the air duct output panel 504 according to the determined operating mode.

[0150] In some embodiments, the MCU board 507 may also send a signal (eg, Fig.9A A signal CS is used to terminate loading of the wafer.

[0151] The LCD touch screen 509 is an input / output interface for displaying parameters, status and / or operation modes of the control module 500, and allows the user to set or modify the program (e.g., wafer rescue program) of the air pipe output interface of the control air pipe output panel 504 stored in the MCU board 507. For example, the user can set the program for one or more steps of draining the etching solution ES, supplying the inactive solution WS, draining the rinsing solution RS, and cleaning the process tank. In some examples, the user can set the duration of the steps of draining the etching solution ES, supplying the inactive solution WS, draining the rinsing solution RS, and cleaning the process tank.

[0152] When the MCU board 507 of the control module 500 receives the trigger signal TS1 / TS2, the buzzer 511 may sound an alarm and trigger the wafer rescue process. The alarm and program reset button 514 is configured to end the wafer rescue process, terminate the alarm of the buzzer 511 and / or terminate the sending of the alarm signal A1 to the central server 410.

[0153] The control module 500 has a self-diagnosis function for detecting pressure, power supply voltage or other parameters. These detection parameters of the control module 500 can be sent to the central server 410 (for example, via the communication interface 505) to ensure the status of the control module 500. In some embodiments, the control module 500 can send an alarm signal to the central server 410 to indicate an abnormal condition of the control module 500. The central server 410 can be a computer integrated manufacturing (CIM) system for monitoring and controlling semiconductor manufacturing processes between various equipment (such as multiple wet process equipment WA). The central server 410 can be called a factory server. The central server 410 can be a computer device or program that manages and provides resources, data, services or programs via a network.

[0154] Fig. 10B for Fig. 10A A top view of the air duct output panel 504 of the control module 500. Fig. 10B and Fig.9A . The air pipe output panel 504 includes a plurality of channels CH1 to CH4, wherein each of the channels CH1 to CH4 is used to control a wet process equipment WA. For example, each of the channels CH1 to CH4 includes an air pipe interface 504DV, an air pipe interface 504SV, and an air pipe interface 504GO. In some embodiments, the air pipe interface 504DV is used to control a flow control device for discharging liquid from a process tank. In some embodiments, the air pipe interface 504SV is used to control a flow control device for supplying liquid to the process tank. In some embodiments, the air pipe interface 504GO is used to control a flow control device for cleaning the process tank. In some embodiments, the air pipe interface 504DV, the air pipe interface 504SV, and the air pipe interface 504GO are outlets for outputting gas, and the air pipe output panel 504 includes a gas inlet 504GI for introducing gas into the air pipe interface 504DV, the air pipe interface 504SV, and the air pipe interface 504GO.

[0155] In some embodiments of the present disclosure, two or more of the pipe interfaces 504DV, 504SV, and 504GO of one of the channels CH1 to CH4 are respectively coupled to two or more flow control devices (e.g., flow control devices WAV1 and WAV2) of one wet etching apparatus WA via suitable gas pipelines (e.g., gas pipelines GL1 and GL2). Through this configuration, the flow rate of the liquid / gas passing through the two or more flow control devices (e.g., flow control devices WAV1 and WAV2) can be respectively controlled by two or more of the air pipe interfaces 504DV, 504SV, and 504GO of the one of the channels CH1 to CH4.

[0156] The wet process equipment WA corresponds to the wet etching equipment 200 and the flow control devices WAV1 and WAV2 correspond to FIG. 3A to FIG. 3C In some embodiments of the flow control devices V22 and V23, the air pipe interface 504DV and the air pipe interface 504SV are respectively connected to FIG. 3A to FIG. 3C The flow control devices V23 and V22 are coupled. In other words, FIG. 3A to FIG. 3C In the embodiment, the flow rate of the etching solution ES passing through the flow control device V23 can be controlled by the air pipe interface 504DV, and the flow rate of the inactive solution WS passing through the flow control device V22 can be controlled by the air pipe interface 504SV.

[0157] The wet process equipment WA corresponds to the flushing equipment 300 and the flow control devices WAV1 and WAV2 correspond to FIG. 6A to FIG. 6C In some embodiments of the flow control devices V32 and V33, the air pipe interface 504DV and the air pipe interface 504GO are respectively connected to FIG. 6A to FIG. 6C In other words, the flow control devices V33 and V32 in FIG. 6A to FIG. 6C In the embodiment, the flow rate of the rinse solution RS passing through the flow control device V33 can be controlled by the air pipe interface 504DV, and the flow rate of the cleaning gas passing through the flow control device V32 can be controlled by the air pipe interface 504GO.

[0158] Fig. 10C for Fig. 10A A top view of the manual button panel 510 of the control module 500. Fig. 10C and Fig.9A The manual button panel 510 includes a plurality of channels CH1 to CH4. Fig. 10BAs discussed in the above, each of the channels CH1 to CH4 is used to control one wet process equipment WA in manual mode. For example, each of the channels CH1 to CH4 includes a manual operation button 510DB and a manual operation button 510SB. The manual operation buttons 510DB and 510SB may also be referred to as a liquid discharge button and a water supply button, respectively. The manual operation buttons 510DB / 510SB are self-locking buttons that are switched using a backlight indicator (e.g., a light-emitting diode (LED)). When the button is pressed, the button is locked in the on state, and the backlight indicator is lit. When the button is pressed again, the button is released and returns to the off state, and the backlight indicator is not lit.

[0159] The button 510DB is used to control the output of the air pipe interface 504DV. If the button 510DB is pressed (e.g., in the open state), the air pipe interface 504DV outputs gas to open the flow control device (e.g., flow control device V23 or V33) for discharging liquid from the process tank. If the button 510DB is released (e.g., in the closed state), the air pipe interface 504DV does not output gas, and the flow control device (e.g., flow control device V23 or V33) for discharging liquid from the process tank is in the closed state.

[0160] The button 510SB is used to control the output of the air pipe interface 504SV. If the button 510SB is pressed, the air pipe interface 504SV outputs gas to open the flow control device (such as flow control or V22) for supplying liquid to the process tank. If the button 510SB is not pressed, the air pipe interface 504SV does not output gas, and the flow control device (such as flow control or V22) for supplying liquid to the process tank is in a closed state.

[0161] Fig.11 FIG. 1 is a flow chart of a method AM for automatically controlling a wet etching / rinsing device according to some embodiments of the present disclosure. Fig.11 and Fig.9A Method AM may comprise steps AM1 to AM18. It should be understood that Fig.11 Additional steps are provided before, during, and after the steps shown in, and some of the steps described may be replaced or eliminated for additional embodiments of methods AM. The order of operations / processes may be interchanged.

[0162] Method AM starts at step AM1, in which the mode switch 513 is changed to the automatic (automatic / auto) mode. Then, when the mode switch is changed to the automatic mode, the manual button panel 510 is avoided in step AM2. Then, method AM proceeds to step AM3, in which the control module 500 initializes the communication module with the central server 410, and then sends a request signal to the central server 410 in step AM4. If in step AM5, the control module 500 receives a response signal from the central server 410, the communication with the central server 410 is established, and in step AM6, the LCD touch screen 509 can display some connection information. If in step AM5, the control module 500 does not receive a response signal from the central server 410, the communication with the central server 410 is not established, and in step AM7, the LCD touch screen 509 can display some offline information. Next, the method AM proceeds to step AM8, the control module 500 delays a certain time (e.g., about 10 seconds to about 50 seconds), and then proceeds to step AM9, in which steps AM4 and AM5 are repeated. If steps AM4 and AM5 are repeated several times (e.g., 2 or 3 times), the method AM proceeds to steps AM10 and AM11, in which the buzzer 511 will alarm and the LCD touch screen 509 will display an error message. When the communication between the control module 500 and the central server 410 is successfully established, in step AM12, the control module 500 is considered to be in automatic mode. The dotted line between steps AM5 and AM represents the boundary between the initialization process and the recipe implementation.

[0163] When an adverse condition occurs in the instantaneous signal, the controller WAC of the wet process equipment WA may send an alarm signal A1 to the central server 410 to indicate the abnormal condition of the wet process equipment WA. Then, the central server 410 may check whether the alarm signal A1 belongs to a designated alarm signal. If the alarm signal A1 belongs to a designated alarm signal, the central server 410 may send a trigger signal TS1 to the control module 500.

[0164] If the control module 500 receives the trigger signal TS1 in step AM13, the method AM proceeds to steps AM14 to AM17. In step AM14, the control module 500 sends a response signal to the central server 410, for example. In step AM15, the control module 500 executes a wafer rescue procedure corresponding to Figure 1 In step AM16, the LCD touch screen 509 may display the pneumatic valve (e.g., the exhaust valve (e.g., FIG. 3A to FIG. 3C Valve V22 in) and supply valve (e.g. FIG. 3A to FIG. 3CThe control module 500 may send a report signal to the central server 410 to inform the central server 410 to initiate the wafer rescue procedure. The user may know the information from the central server 410, and then check the wet process equipment WA, repair the wet process equipment WA, restore the wet process or / and press the alarm and program reset button 514. If the control module 500 does not receive the trigger signal TS1 in step AM13, the method AM returns to step AM12.

[0165] Fig.12 FIG. 5 is a diagram illustrating various operations of the control module 500 in the manual mode according to some embodiments of the present disclosure. Fig.12 and Fig. 10C . In manual mode operation #1, the liquid discharge button 510DB is pressed, and the water supply button 510SB is released. In manual mode operation #2, the liquid discharge button 510DB is released, and the water supply button 510SB is released. In manual mode operation #3, the liquid discharge button 510DB is released, and the water supply button 510SB is pressed. In manual mode operation #4, the liquid discharge button 510DB is released, and the water supply button 510SB is released. In manual mode operation #5, the liquid discharge button 510DB is pressed, and the water supply button 510SB is pressed. The first two columns show the on / off status of the backlight indicators of these buttons, which can show the on / off status of the buttons.

[0166] The last two columns show the status of the pneumatic valves. For example, the last two columns show the status of the exhaust valve (e.g. FIG. 3A to FIG. 3C Valve V22 in) and supply valve (e.g. FIG. 3A to FIG. 3C Therefore, by manually pressing or releasing the liquid discharge buttons 510DB and 510SB, the discharge valve (e.g. FIG. 3A to FIG. 3C Valve V22 in) and supply valve (e.g. FIG. 3A to FIG. 3C Valve V23) in the middle can be used to rescue the wafer by manual control.

[0167] Fig.13is a circuit diagram of an emergency mode according to some embodiments of the present disclosure. The controller WAC of the wet process equipment WA may include a power rail PL and / or a CPU error monitoring pipeline CL. The monitoring device 420 may be electrically connected to the power rail PL and / or the CPU error monitoring pipeline CL for determining whether an error (e.g., a CPU error ER) exists. The monitoring device 420 may be connected to the interlock interface 503 of the control module 500. If an error (e.g., a CPU error ER) is detected by the monitoring device 420, the monitoring device 420 may be shut down, thereby generating a high resistance signal, which serves as a trigger signal TS2 (refer to Fig. 9C ). The control module 500 may receive the trigger signal TS2 and trigger the wafer rescue procedure. The control module 500 may include a suitable control logic 590 electrically connected to the monitoring device 420. The emergency procedure is used to monitor unexpected conditions of the tool. During normal operation, the control system of the tool controls the normally open monitoring device 420, and the control logic 590 inputs a low voltage. When the wet controller WAC of the wet process equipment WA is abnormal, the monitoring device 420 is released (for example, turned off), the control logic 590 inputs a high voltage, all channels execute the defined wafer rescue procedure, and at the same time, the buzzer alarms, and for automatic and / or manual modes, an alarm command will be sent to the central server 410.

[0168] Based on the above discussion, it can be seen that the present disclosure provides advantages. However, it should be understood that other embodiments may provide additional advantages, and not all advantages must be disclosed herein, and not all embodiments require specific advantages. One advantage is that the system defines wafer rescue processes designed in different ways for different chemicals, and it has been proven that these processes are the best way to deal with wafer over-immersion in wet bench tools. Another advantage is that the system is designed with multiple channels to control multiple pneumatic valves in wet bench tools, which allows users to customize wafer rescue process functions. Another advantage is that the system has a self-diagnostic function to avoid system failure. It will continuously monitor the status of the controller. The status includes but is not limited to air pressure, power supply voltage and MCU heartbeat signal. If the controller detects an abnormal state, the controller will send an error message to the factory server and the buzzer will alarm. Another advantage is that the system is programmable. The function of each linked pneumatic valve in the chemical tank module can be combined into different steps of different chemical scenarios. Each wafer rescue procedure is defined by the duration and sequence of these steps. The step sequence can also be set to a loop. Another advantage is that the system can receive commands from the factory server to trigger the wafer rescue process. In addition, the system can also send an alarm message to the factory server. Another advantage is that the damage to the film and structure on the wafer caused by over-immersion due to abnormalities of the wet bench tool is minimized. Another advantage is that the risk of manual handling by engineers is reduced, which can ensure personal safety.

[0169] According to some embodiments of the present disclosure, the method includes the following steps: placing a wafer in a process tank filled with a process solution; after placing the wafer in the process tank, determining whether the wafer is in the process tank after a preset process time; and in response to determining that the wafer is in the process tank after the preset process time, draining the process solution from the process tank while the wafer is in the process tank.

[0170] In some embodiments, the process solution is an etching solution.

[0171] In some embodiments, the method further includes supplying an inactive solution to the process tank while placing the wafer in the process tank after draining the process solution from the process tank.

[0172] In some embodiments, the process solution is a rinse solution.

[0173] In some embodiments, the method further includes cleaning the process bath by providing a gas into the process bath while the wafer is placed in the process bath after draining the process solution from the process bath.

[0174] In some embodiments, draining the process solution from the process tank includes removing the process solution from a drain line fluidly coupled to a bottom portion of the process tank.

[0175] In some embodiments, the process tank includes an inner tank and an outer tank, the inner tank is disposed in the outer tank, and discharging the process solution from the process tank includes discharging the process solution from the inner tank; and discharging the process solution from the outer tank.

[0176] According to some embodiments of the present disclosure, the method includes the following steps: placing a wafer in a process tank of a wet process equipment, wherein the process tank is filled with a process solution; providing a trigger signal to a control module; and using the control module to perform a wafer rescue process after the control module receives the trigger signal, wherein the wafer rescue process includes the following steps: draining the process solution from the process tank.

[0177] In some embodiments, the trigger signal is provided by a central server, wherein the central server receives an alarm signal from the wet process equipment.

[0178] In some embodiments, the trigger signal is provided by a monitoring device electrically coupled to the wet process tool.

[0179] In some embodiments, draining the process solution from the process tank includes opening, using the control module, a first pneumatic valve coupled to a drain line, wherein the drain line is fluidly connected to the process tank.

[0180] In some embodiments, the wafer salvage process further includes supplying an inactive solution to the process tank.

[0181] In some embodiments, supplying the inert solution to the process tank includes opening, using the control module, a second pneumatic valve coupled to a supply line fluidly connected to the process tank.

[0182] In some embodiments, the wafer salvage process further includes cleaning the process tank.

[0183] In some embodiments, cleaning the process tank includes using the control module to open a third pneumatic valve coupled to a gas line, the gas line being fluidly connected to a spray nozzle above the process tank.

[0184] According to some embodiments of the present disclosure, a system includes a wet process equipment and a control module. The wet process equipment includes a process tank, a discharge pipeline fluidly connected to the process tank, and a first pneumatic valve coupled to the discharge pipeline. The control module is located outside the wet process equipment. The control module includes a first air pipe interface fluidly connected to the first pneumatic valve.

[0185] In some embodiments, the wet process equipment further includes a supply line fluidly connected to the process tank and a second pneumatic valve coupled to the supply line, and the control module further includes a second air pipe interface fluidly connected to the second pneumatic valve.

[0186] In some embodiments, the wet process equipment further includes a gas pipeline and a third pneumatic valve, the gas pipeline fluid is connected to a spray nozzle above the process tank, the third pneumatic valve is coupled to the gas pipeline, and the control module further includes a third air pipe interface, the third air pipe interface fluid is connected to the third pneumatic valve.

[0187] In some embodiments, the process tank includes an inner tank and an outer tank, the inner tank is disposed in the outer tank, and the discharge line is fluidly connected to the inner tank and the outer tank.

[0188] In some embodiments, the system further includes a monitoring device electrically coupled to the wet process equipment and the control module.

[0189] The foregoing summarizes the features of several embodiments so that those skilled in the art can better understand the various aspects of the present disclosure. Those skilled in the art should understand that they can easily use the present disclosure as a basis for designing or modifying other processes and structures for achieving the same purposes and / or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and various changes, substitutions and modifications can be made herein without departing from the spirit and scope of the present disclosure.

Claims

1. A method for wafer wet processing, characterized in that: include: Placing a wafer in a process tank filled with a process solution; After placing the wafer in the process tank, determining whether the wafer is in the process tank after a preset process time; and In response to determining that the wafer is in the process tank after the predetermined process time, the process solution is discharged from the process tank while the wafer is in the process tank.

2. The method according to claim 1, characterized in that The process solution is an etching solution.

3. The method according to claim 2, characterized in that Further including: After draining the process solution from the process tank, an inactive solution is supplied to the process tank when the wafer is placed in the process tank.

4. The method according to claim 1, characterized in that The process solution is a flushing solution.

5. A method for wafer wet processing, characterized in that: include: Placing a wafer in a process tank of a wet process equipment, wherein the process tank is filled with a process solution; Providing a trigger signal to a control module; and After the control module receives the trigger signal, the control module is used to perform a wafer rescue process, wherein the wafer rescue process includes: The process solution is discharged from the process tank.

6. The method according to claim 5, characterized in that The trigger signal is provided by a central server, and the central server receives an alarm signal from the wet process equipment.

7. The method according to claim 5, characterized in that The trigger signal is provided by a monitoring device electrically coupled to the wet process equipment.

8. A system for wafer wet processing, characterized in that: include: A wet process apparatus comprising a process tank, a drain line fluidly connected to the process tank, and a first pneumatic valve coupled to the drain line; and A control module is located outside the wet process equipment, wherein the control module includes a first air pipe interface connected to the first pneumatic valve fluid.

9. The system according to claim 8, characterized in that The wet process equipment further includes a supply line fluidly connected to the process tank and a second pneumatic valve coupled to the supply line, and the control module further includes a second air pipe interface fluidly connected to the second pneumatic valve.

10. The system according to claim 8, characterized in that The wet process equipment further includes a gas pipeline and a third pneumatic valve, the gas pipeline fluid is connected to a spray nozzle above the process tank, the third pneumatic valve is coupled to the gas pipeline, and the control module further includes a third air pipe interface, the third air pipe interface fluid is connected to the third pneumatic valve.

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