Semiconductor cleaning anti-splash shield and semiconductor cleaning equipment

Abstract

The invention relates to a semiconductor cleaning anti-splash shield and semiconductor cleaning equipment, and the semiconductor cleaning anti-splash shield is used for preventing liquid drops thrown out by a rotating wafer (101) in the tangential direction from being splashed and comprises a shield body (1) which comprises a side wall (11), and the side wall (11) is annular and coaxially surrounds the wafer (101); the anti-splash assembly (2) is arranged in the cover body (1), the anti-splash assembly (2) comprises a first annular plate (21), a second annular plate (22) and an anti-splash component (20), the first annular plate (21) and the second annular plate (22) are both connected to the side wall (11) and are arranged at intervals from top to bottom in the height direction, and the anti-splash component (20) is connected between the first annular plate (21) and the second annular plate (22); the anti-splash component (20) and the side wall (11) are arranged at intervals in the radial direction of the cover body (1) to form an annular containing cavity (4), and the anti-splash component (20) is provided with a channel for liquid drops to enter the containing cavity (4).

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor cleaning, and particularly to a semiconductor cleaning anti-splash shield and a semiconductor cleaning device. Background Art

[0002] In the semiconductor industry, there are specialized cleaning processes, which are interspersed between some other processing processes, such as electroplating edge cleaning, photoresist edge cleaning, etc. In order to prevent the splashing of cleaning liquid, it is very necessary to set corresponding anti-splash shields. The shields are arranged around the wafer, and most of the liquid droplets hit the middle of the shield and then drip along the side wall of the shield.

[0003] In the edge cleaning process steps known to the inventor, a rotating cleaning device is used to clean and dry the wafer. In the cleaning chamber, the wafer is clamped by a fixture and rotated at a high speed. Deionized water nozzles spray deionized water onto the rotating wafer for cleaning. The edge cleaning nozzles will spray an edge cleaning agent on the edge of the wafer for the edge cleaning process. The edge cleaning agent is generally a mixture of sulfuric acid, hydrogen peroxide and deionized water, and has strong oxidizing properties. After the edge cleaning process is completed, the wafer will be cleaned again. After stopping the spraying of deionized water, the fixture will rotate at a higher speed, and under the action of centrifugal force, the deionized water attached to the wafer is thrown out onto the anti-splash shield. However, during the spin-drying and edge cleaning processes, it is inevitable that some liquid droplets will hit the inner wall of the shield and then splash back onto the wafer surface. The liquid droplets splashing back onto the wafer surface will cause oxidation, damage or contamination to the wafer, affecting subsequent processes.

[0004] It can be seen that although the traditional shield can block the splashing of liquid droplets, it cannot prevent the liquid droplets from splashing back onto the wafer surface after hitting the shield wall during this process, nor can it better avoid the dripping of the liquid droplets remaining on the shield. Summary of the Invention

[0005] Embodiments of the present disclosure provide a semiconductor cleaning anti-splash shield and a semiconductor cleaning device, which can prevent the thrown liquid droplets from returning to the wafer.

[0006] According to one aspect of the present disclosure, a semiconductor cleaning anti-splash shield is proposed, which is used to prevent the liquid droplets tangentially thrown out by a rotating wafer from splashing back, and includes:

[0007] A shield body, including a side wall, the side wall is annular and coaxially surrounds the wafer; and

[0008] An anti-splash component, arranged inside the shield body. The anti-splash component includes a first circular ring plate, a second circular ring plate and an anti-splash part. The first circular ring plate and the second circular ring plate are both connected to the side wall and are arranged at intervals in the height direction from top to bottom. The anti-splash part is connected between the first circular ring plate and the second circular ring plate. The anti-splash part and the side wall are arranged at intervals in the radial direction of the shield body to form an annular accommodation cavity. The anti-splash part has a channel for the liquid droplets to enter the accommodation cavity.

[0009] In some embodiments, the semiconductor cleaning anti-splash shield further includes:

[0010] A plurality of drain holes are arranged at intervals along the circumferential direction of the shield body. The drain holes are provided between the side wall and the anti-splash component, and are configured to guide the droplets entering the accommodation cavity to the outside of the shield.

[0011] In some embodiments, the drain holes are provided on the second annular plate, and at least a part of the upper surface of the second annular plate slopes downward from the end far away from the side wall towards the end close to the side wall.

[0012] In some embodiments, a drain groove is provided between the side wall and the anti-splash component. The drain groove is lower than the second annular plate in the height direction, and the drain holes are provided at the bottom of the drain groove.

[0013] In some embodiments, the anti-splash component includes a plurality of guide vanes. The guide vanes are arc-shaped and are connected between the first annular plate and the second annular plate. The plurality of guide vanes are arranged at equal intervals along the circumferential direction of the shield body. A guide inlet is formed between the first ends of two adjacent guide vanes far away from the side wall, and the guide inlet is configured to face the moving direction of the droplets thrown out by the wafer.

[0014] In some embodiments, the orientation of the guide inlet is parallel to the moving direction of the droplets thrown out by the wafer; and / or

[0015] The radian of the guide vane and the distance between adjacent guide vanes are configured such that the droplets thrown out by the wafer only hit the concave surface of the guide vane.

[0016] In some embodiments, the surface roughness of the guide vane is less than a preset roughness, and / or the thickness of the first end of the guide vane is less than a preset thickness.

[0017] In some embodiments, both the number and the radian of the guide vanes are inversely proportional to the droplet viscosity; and / or the number of the guide vanes is directly proportional to the moving speed of the droplets thrown out by the wafer.

[0018] In some embodiments,

[0019] When the droplet viscosity is greater than the preset viscosity, the orientation of the guide inlet is parallel to the moving direction of the droplets thrown out by the wafer; and / or

[0020] When the droplet viscosity is not greater than the preset viscosity, the orientation of the guide inlet forms a preset angle with the moving direction of the droplets thrown out by the wafer.

[0021] In some embodiments, the anti-splash component further includes a liquid blocking net, and the liquid blocking net is connected between the first annular plate and the second annular plate.

[0022] In some embodiments, the liquid blocking net is arranged radially inside the plurality of guide vanes; and / or the liquid blocking net is arranged between two adjacent guide vanes.

[0023] In some embodiments, the backsplash prevention assembly is detachably connected to the cover.

[0024] In some embodiments, a plurality of anti-backsplash assemblies are provided, each anti-backsplash assemblies has a different number and / or curvature of guide vanes, and the semiconductor cleaning anti-backsplash shield can selectively be installed with an anti-backsplash assembly adapted to the droplets.

[0025] In some embodiments, the anti-splash component includes a liquid retaining net connected between the first annular plate and the second annular plate, and a radial distance between the liquid retaining net and the central axis gradually decreases upward and downward from the horizontal plane where the wafer is located.

[0026] In some embodiments, the mesh density of the liquid retaining mesh is inversely proportional to the viscosity of the liquid droplets.

[0027] In some embodiments, the liquid retaining mesh is woven from silk threads or is a porous material.

[0028] In some embodiments, the wafer is spaced equidistant from the first annular plate and the second annular plate along a height direction.

[0029] In some embodiments, an air extraction hole is provided on the side wall, and the air extraction hole is arranged between the first circular ring plate and the second circular ring plate along the height direction. The air extraction hole is configured to form a negative pressure in the accommodating chamber.

[0030] In some embodiments, the air extraction holes are inclined upward from the inner side of the side wall to the outer side of the side wall; and / or a plurality of air extraction holes are evenly arranged along the circumferential direction.

[0031] According to another aspect of the present disclosure, a semiconductor cleaning device is provided, comprising the semiconductor cleaning anti-backsplash shield of the above embodiment.

[0032] Based on the above technical scheme, the semiconductor cleaning anti-splash shield of the embodiment of the present invention can reduce the size of the anti-splash shield by arranging an anti-splash component on the inner wall of the shield body, so that droplets enter the receiving chamber through the channel of the anti-splash component, thereby eliminating the splash kinetic energy of the droplets and preventing the droplets from splashing and contaminating the wafer surface; by collecting the droplets in the receiving chamber, it is possible to prevent the droplets remaining in the shield from dripping by draining or storing liquid, so that the droplets from dripping and contaminating the wafer during the movement of the anti-splash shield; by preventing the ejected droplets from returning to the wafer, it is possible to prevent the droplets from causing oxidative damage to the wafer, thereby improving the product yield, and at the same time reducing the impact of abnormal conditions of the inspection equipment on the production line, improving production capacity, and compressing the chamber size, so that the related equipment chambers can be developed towards a higher degree of integration. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] The accompanying drawings described herein are used to provide a further understanding of the present disclosure and form a part of this application. The schematic embodiments and descriptions thereof of the present disclosure are used to explain the present disclosure and do not constitute an improper limitation of the present disclosure. In the drawings:

[0034] Figure 1 It is a schematic structural diagram of some embodiments of the semiconductor cleaning anti-splash shield of the present disclosure.

[0035] Figure 2 It is a top view of some embodiments of the semiconductor cleaning anti-splash shield of the present disclosure.

[0036] Figure 3 It is a schematic structural diagram of some other embodiments of the semiconductor cleaning anti-splash shield of the present disclosure.

[0037] Figure 4 It is a schematic diagram of the movement of droplets thrown tangentially from the wafer in some embodiments of the semiconductor cleaning anti-splash shield of the present disclosure.

[0038] Figure 5 is Figure 4 a partial enlarged schematic diagram of.

[0039] Figure 6 It is a schematic structural diagram of some embodiments of the anti-splash component of the semiconductor cleaning anti-splash shield of the present disclosure.

[0040] Figure 7 It is a schematic perspective view of the whole in some embodiments of the semiconductor cleaning anti-splash shield of the present disclosure.

[0041] Figure 8 It is a schematic structural diagram of still some other embodiments of the semiconductor cleaning anti-splash shield of the present disclosure.

[0042] Explanation of reference numerals

[0043] 1. Cover body; 2. Anti-splash component; 3. Drain hole; 4. Accommodation cavity; 5. Air extraction hole; 11. Side wall; 20. Anti-splash part; 21. First ring plate; 22. Second ring plate; 201. Flow guiding piece; 211. Flow guiding inlet; 202. Liquid blocking net; 30. Drainage groove; 101. Wafer. Detailed implementation manners

[0044] The following details the present disclosure. In the following paragraphs, different aspects of the embodiments are more specifically defined. Each aspect so defined can be combined with any other one or more aspects, unless clearly stated that they cannot be combined. In particular, any feature considered to be preferred or advantageous can be combined with any other one or more features considered to be preferred or advantageous.

[0045] The terms "first", "second", etc. that appear in this disclosure are only for convenience of description to distinguish different components with the same name, and do not indicate a sequence or primary-secondary relationship.

[0046] In the description of this disclosure, it should be understood that the orientation or positional relationship indicated by terms such as "upper", "lower", "inner", or "outer" is defined based on the cover body or the height direction, etc., and is only for the convenience of describing this disclosure, rather than indicating or implying that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation on the protection scope of this disclosure.

[0047] The inventors found during the research process that as the process technology becomes more and more advanced, the integration of corresponding equipment becomes higher and higher, the chamber layout becomes more and more compact, and cobalt metal will be used as a key interconnect metal. The chemical properties of cobalt metal are more active than those of copper and will be oxidized by dilute sulfuric acid at room temperature. Therefore, it is very necessary to protect the electroplated layer during the electroplating cobalt process. After the edge cleaning process, the shield will be moved away so that the robot can take out the wafer for the next process. During the movement of the shield, there are situations such as shaking. If there are still large droplets on the shield, the droplets on the shield may drip onto the surface of the wafer, causing contamination and affecting the subsequent process. Taking cobalt as an example, if there is water on the wafer, it will react with cobalt at high temperature during the subsequent annealing process to generate cobalt oxide, which will have a greater impact on the wafer.

[0048] The solution to the above problems in the related art is to enlarge the chamber for edge cleaning and increase the diameter of the shield, so as to avoid the back-splash of the edge cleaning droplets onto the wafer surface after hitting the inner surface of the shield. This method does not directly solve the problem of back-splash, but increases the physical size to reduce the kinetic energy of the droplets after back-splash so that they cannot splash back onto the wafer surface. However, when the kinetic energy is too large, the influence of gravity on the kinetic energy of the droplets is limited in a limited space, and the problem cannot be directly solved; moreover, the limitation of physical size cannot completely solve the back-splash of the droplets, but only reduces the number of back-splashes, and also physically limits the reduction of the chamber size of the machine tool, which is not conducive to the development of technology; at the same time, the related art also cannot better avoid the dripping of the droplets remaining on the shield.

[0049] To solve at least one of the above problems, first, this disclosure provides a semiconductor cleaning anti-back-splash shield for preventing the back-splash of droplets tangentially thrown out by a rotating wafer 101. The semiconductor cleaning anti-back-splash shield of this disclosure can be applied to electroplating chambers, electroplating edge cleaning chambers, or other wafer cleaning processes in the semiconductor processing field. Some of the following embodiments of this disclosure are described by taking the edge cleaning chamber as an example.

[0050] As Figures 1 to 8 shown, the semiconductor cleaning anti-back-splash shield includes:

[0051] The cover 1 comprises a side wall 11, which is annular and coaxially surrounds the wafer 101; and

[0052] The anti-splash component 2 is arranged in the cover body 1, and the anti-splash component 2 includes a first circular plate 21, a second circular plate 22 and an anti-splash component 20. The first circular plate 21 and the second circular plate 22 are both connected to the side wall 11 and are spaced from top to bottom in the height direction. The anti-splash component 20 is connected between the first circular plate 21 and the second circular plate 22. The anti-splash component 20 and the side wall 11 are spaced in the radial direction of the cover body 1 to form an annular accommodating chamber 4. The anti-splash component 20 has a channel for droplets to enter the accommodating chamber 4.

[0053] Specifically, the droplets tangentially thrown out by the rotating wafer 101 enter the accommodating chamber 4 through the channel of the anti-splashback component 20, and the kinetic energy of the droplets is reduced during the movement. Specifically, the anti-splashback component 20 is annular, surrounds the wafer 101 and can eliminate the splashback kinetic energy of the thrown droplets. Optionally, the anti-splashback component 20 can eliminate the splashback kinetic energy of the droplets by changing the movement direction of the droplets and utilizing friction, or can eliminate the splashback kinetic energy of the droplets by utilizing liquid surface tension or capillary action.

[0054] Specifically, the lower surface of the second annular plate 22 and the first annular plate 21 are perpendicular to the rotation axis of the wafer 101. Optionally, the upper surface of the second annular plate 22 can be perpendicular to the rotation axis of the wafer 101, or can be tilted downward from the end away from the side wall 11 toward the end close to the side wall 11, so that the droplets entering the channel and falling onto the second annular plate 22 are further directed to the accommodating chamber 4, thereby achieving liquid drainage or liquid storage. Optionally, the channel can be formed by the gaps between adjacent guide plates, or by the internal gaps of the liquid retaining net, etc.

[0055] Specifically, the anti-splashback component 2 can compress the size of the edge-washing chamber to the maximum extent, thereby saving the size of the entire machine, reducing the cost of related materials, and reducing the floor space of the entire machine. Specifically, the setting of the accommodating chamber 4 can keep the environment of the entire edge-washing chamber dry, reduce the oxidation of related metals, thereby reducing the oxidation damage of the entire wafer and improving the yield of the product. Specifically, if droplets fall on the surface of the wafer during the production process, it is necessary to retest in time to find the cause. By setting the anti-splashback component 20 and the accommodating chamber 4, the time for retesting can be reduced during daily testing of the machine, which can increase the normal working time of the machine and improve production capacity.

[0056] In this embodiment, by providing an anti-splash component on the inner side wall of the cover, the size of the anti-splash shield can be reduced, allowing droplets to enter the accommodation cavity through the channels of the anti-splash component, thereby eliminating the anti-splash kinetic energy of the droplets and preventing the droplets from splashing back onto the wafer surface. By collecting the droplets in the accommodation cavity, dripping of the droplets remaining on the shield can be avoided through drainage or liquid storage, etc., so that the anti-splash shield does not contaminate the wafer with dripping droplets during movement. By preventing the splashed droplets from returning to the wafer, oxidation damage to the wafer caused by the droplets can be prevented, the product yield can be improved, the impact of abnormal states of inspection equipment on the production line can be reduced, the production capacity can be increased, and the relevant equipment chambers can be developed towards higher integration levels.

[0057] In some embodiments, as Figures 1 to 8 shown, the semiconductor cleaning anti-splash shield further includes:

[0058] A plurality of drain holes 3 are arranged at intervals along the circumferential direction of the cover body 1. The drain holes 3 are provided between the side wall 11 and the anti-splash component 20, and the drain holes 3 are configured to guide the droplets entering the accommodation cavity 4 to the outside of the cover body 1.

[0059] Specifically, the plurality of drain holes 3 are evenly arranged at intervals along the circumferential direction of the cover body 1. Specifically, the droplets can flow to the outside or the bottom of the side wall 11 through the plurality of drain holes 3. Optionally, the drain holes 3 can be provided on the second circular ring plate 22 or on the inner side wall of the cover body 1. For example, when the side wall of the cover body is L-shaped, the drain holes 3 are provided on the horizontal part or the circular ring plate perpendicular to the central axis of the L-shaped side wall.

[0060] In this embodiment, the droplets entering the accommodation cavity can be guided to the outside of the cover through the plurality of drain holes, which can prevent the remaining droplets from dripping during the movement of the anti-splash shield, thereby avoiding the contamination of the wafer by the dripping droplets; it can keep the environment of the entire processing chamber dry, reduce the oxidation of related metals, thereby reducing the oxidation damage of the entire wafer and improving the product yield.

[0061] In some embodiments, as Figures 1 to 7 shown, the drain holes 3 are provided on the second circular ring plate 22, and at least part of the upper surface of the second circular ring plate 22 slopes downward from the end far from the side wall 11 towards the end close to the side wall 11.

[0062] In this embodiment, by the at least part of the upper surface of the second circular ring plate sloping downward from the end far from the side wall towards the end close to the side wall, it is convenient for the droplets entering the channel and falling onto the second circular ring plate to flow to the drain holes under the action of gravity, thereby improving the drainage smoothness and keeping the environment of the processing chamber dry.

[0063] In some embodiments, as Figure 3As shown, a liquid discharge groove 30 is provided between the side wall 11 and the anti-splash member 20. The liquid discharge groove 30 is lower than the second annular plate 22 in the height direction, and the liquid discharge holes 3 are provided at the bottom of the liquid discharge groove 30. Specifically, the liquid discharge groove 30 is annular, and the liquid discharge groove 30 can be a liquid leakage groove or the like.

[0064] In this embodiment, by providing the liquid discharge groove and arranging the liquid discharge holes at the bottom of the liquid discharge groove, it is possible to collect the liquid droplets in the liquid state or the condensed gaseous state that enter the accommodation cavity and discharge the liquid droplets drained by the anti-splash member, thereby improving the smoothness of liquid discharge and keeping the environment of the processing chamber dry.

[0065] In some embodiments, as Figures 1 to 7 shown, the anti-splash member 20 includes a plurality of guide vanes 201. The guide vanes 201 are arc-shaped and are connected between the first annular plate 21 and the second annular plate 22. The plurality of guide vanes 201 are arranged at equal intervals along the circumference of the cover body 1. A guide inlet 211 is formed between the first ends of two adjacent guide vanes 201 that are away from the side wall 11, and the guide inlet 211 is configured to face the moving direction of the liquid droplets thrown out by the wafer 101.

[0066] Specifically, the gap between adjacent guide vanes 201 forms a channel. The guide vanes 201 can be blade-edge concave-shaped baffles or the like, and the opening direction of the guide vanes 201 is opposite to the rotation direction of the wafer 101. Specifically, after the liquid droplets hit the guide vanes 201, they are completely drained along the concave part of the guide vanes 201 into the accommodation cavity 4. During the drainage process, the kinetic energy and volume of the liquid droplets decrease, and they do not have the kinetic energy condition for re-splashing. Specifically, during the drainage process, the large liquid droplets fall under the action of gravity and can be transferred through the liquid discharge holes 3 or the like, and the vaporized small liquid droplets can be transferred through the air extraction holes 5 or the like.

[0067] Specifically, the arc-shaped guide vanes 201 are used to adapt to the flow direction of the liquid thrown out by the wafer 101 in the tangential direction, and the guide inlet 211 faces the moving direction of the liquid droplets, which can eliminate the frontal impact of the liquid droplets on the guide vanes 201 and prevent the liquid droplets from being further dispersed into small liquid droplets and splashing back onto the wafer 101 during the impact process.

[0068] In this embodiment, by uniformly arranging the guide vanes, it is possible to drain the liquid droplets thrown out by the wafer, and during the drainage process, the kinetic energy and volume of the liquid droplets decrease, eliminating the anti-splashing kinetic energy of the liquid droplets, and being able to better prevent the anti-splashing of the liquid droplets and protect the surface of the wafer.

[0069] In some embodiments, the orientation of the guide inlet 211 is parallel to the moving direction of the liquid droplets thrown out by the wafer 101.

[0070] In this embodiment, since the orientation of the diversion inlet is parallel to the movement direction of the droplets ejected from the wafer, the tangential velocity of the ejected droplets can be utilized to divert the droplets to the accommodation cavity through the concave surface of the diversion vane. During the diversion process, the anti-splashing kinetic energy of the droplets can be eliminated, facilitating the discharge of the droplets after diversion and helping to keep the environment of the processing chamber dry.

[0071] In some embodiments, as Figure 4 and Figure 5 shown, the radian of the diversion vane 201 and the spacing between adjacent diversion vanes 201 are configured such that the droplets ejected from the wafer 101 only impact on the concave surface of the diversion vane 201.

[0072] Specifically, the concavity between the diversion vanes 201 can completely cover the side wall 11 between the diversion vanes 201 on the projection plane, thereby preventing the droplets from colliding with the side wall 11 or the convex surface of the diversion vane 201, enabling the droplets to fully impact on the concave surface of the diversion vane 201 and be completely diverted.

[0073] Specifically, in terms of the anti-sputtering angle, the above setting method of the diversion vane 201 can completely isolate the path for the droplets to return to the surface of the wafer 101, achieving the purpose of trapping the droplets at the rear end of the diversion vane 201 or in the accommodation cavity 4.

[0074] In this embodiment, through the setting method of the diversion vane, the droplets ejected from the wafer only impact on the concave surface of the diversion vane, enabling complete diversion of the droplets. After diversion, the droplets are trapped at the rear end of the diversion vane or in the accommodation cavity, which helps to keep the environment of the processing chamber dry.

[0075] In some embodiments, the surface roughness of the diversion vane 201 is less than a preset roughness, and / or the thickness of the first end of the diversion vane 201 is less than a preset thickness.

[0076] In this embodiment, by reducing the surface roughness of the diversion vane and / or reducing the thickness of the first end of the diversion vane, the droplets can be completely diverted, improving the dryness of the processing chamber.

[0077] Optionally, the diversion vane 201 can be selected as a thin-type diversion vane to achieve complete diversion of the droplets.

[0078] In some embodiments, both the number and the radian of the diversion vanes 201 are inversely proportional to the viscosity of the liquid droplets.

[0079] Specifically, the lower the liquid viscosity and the smaller the droplet size, the denser the arrangement of the diversion vanes 201 and the larger the radian of the diversion vanes 201; the higher the liquid viscosity and the larger the droplet size, the sparser the arrangement of the diversion vanes 201 and the smaller the radian of the diversion vanes 201.

[0080] In this embodiment, since both the number and the radian of the flow guiding pieces are inversely proportional to the viscosity of the droplets, the number and the radian of the flow guiding pieces can be adaptively adjusted according to droplets with different viscosities, so as to specifically improve the flow guiding effect and the universality of the semiconductor cleaning anti-splash shield.

[0081] In some embodiments,

[0082] when the viscosity of the droplets is greater than the preset viscosity, the orientation of the flow guiding inlet 211 is parallel to the moving direction of the droplets thrown out by the wafer 101; and / or

[0083] when the viscosity of the droplets is not greater than the preset viscosity, the orientation of the flow guiding inlet 211 forms a preset angle with the moving direction of the droplets thrown out by the wafer 101.

[0084] Specifically, the lower the liquid viscosity and the smaller the droplet size, the opening angle of the flow guiding piece 201 is parallel to the circumferential tangent direction of the wafer 101 to achieve complete flow guiding; the higher the liquid viscosity and the larger the droplet size, the opening angle of the flow guiding piece 201 has an angle with the circumferential tangent direction of the wafer 101 to achieve complete flow guiding.

[0085] In this embodiment, by adaptively adjusting the orientation of the flow guiding inlet according to droplets with different viscosities, the flow guiding effect can be specifically improved.

[0086] In some embodiments, the number of the flow guiding pieces 201 is proportional to the moving speed of the droplets thrown out by the wafer 101. Specifically, the faster the rotation speed of the wafer 101, the denser the number of the flow guiding pieces 201; the slower the rotation speed of the wafer 101, the sparser the number of the flow guiding pieces 201. Specifically, the moving linear velocity of the droplets is equal to the angular velocity of the wafer 101 multiplied by the radius of the wafer 101. Optionally, the rotation speed of the wafer 101 can be 400 r / min or 1000 r / min, etc.

[0087] In this embodiment, by adjusting the density of the flow guiding pieces according to the rotation speed of the wafer, the flow guiding effect on droplets with different speeds can be improved, and the universality of the semiconductor cleaning anti-splash shield can be improved.

[0088] In some embodiments, the anti-splash component 20 further includes a liquid blocking net 202, and the liquid blocking net 202 is connected between the first circular ring plate 21 and the second circular ring plate 22.

[0089] Specifically, the internal gap of the liquid blocking net 202 also forms a channel. Optionally, the liquid blocking net 202 can be arranged radially inside a plurality of flow guiding pieces 201, or can be arranged radially between a plurality of flow guiding pieces 201 and the side wall 11. Optionally, the liquid blocking net 202 can be infiltrated before use to form a water film, and the kinetic energy of the droplets can be further dissipated by using the surface tension of the water film surface.

[0090] In this embodiment, the combination of the flow guide vane and the liquid blocking net can achieve double liquid blocking, further reduce the size of the anti-splash shield, eliminate the anti-splash kinetic energy of the liquid droplets, and avoid the anti-splash pollution of the wafer surface by the liquid droplets.

[0091] In some embodiments, the liquid blocking net 202 is arranged radially inside the plurality of flow guide vanes 201; and / or the liquid blocking net 202 is arranged between two adjacent flow guide vanes 201.

[0092] Specifically, arranging the liquid blocking net 202 between the arc-shaped flow guide vane 201 and the wafer 101, or arranging the liquid blocking net 202 between two adjacent flow guide vanes 201, can further guide the dispersed liquid droplets into the accommodation cavity 4 by the flow guide vane 201 when the liquid droplets cannot be avoided from being dispersed into dispersed liquid droplets after hitting the liquid blocking net 202.

[0093] The combined arrangement of this embodiment is mainly used in the case of a long cleaning time and a large amount of cleaning liquid. A water film will be formed on the flow guide vane. At this time, changing the original arc of the flow guide vane cannot avoid the anti-splash of the liquid droplets to the wafer surface after hitting the water film surface. However, adding a layer of mesh material arrangement can prevent the liquid droplets splashing back to the wafer surface after hitting the water film.

[0094] Optionally, when the liquid blocking net 202 is arranged radially inside the plurality of flow guide vanes 201, the radial distance between the liquid blocking net 202 and the central axis can gradually decrease both upward and downward from the horizontal plane where the wafer 101 is located, so as to further lengthen the movement path of the liquid droplets on the horizontal plane where the wafer 101 is located in a limited chamber. Optionally, when the liquid blocking net 202 is arranged between two adjacent flow guide vanes 201, the arc of the liquid blocking net 202 can be the same as that of the flow guide vane 201, and the liquid blocking net 202 can be attached to the concave surface of the flow guide vane 201. Optionally, the liquid blocking net 202 can be woven by silk threads or can be a porous material, etc.

[0095] In some embodiments, the anti-splash component 2 is detachably connected to the cover body 1.

[0096] Optionally, an upper connecting edge can be provided at the top of the side wall 11 of the cover body 1, and the first circular ring plate 21 of the anti-splash component 2 is detachably fixed to the upper connecting edge, which can facilitate the installation of the anti-splash component. Optionally, the side wall 11 of the cover body 1 is provided with an upper connecting edge and a lower connecting edge, and the upper connecting edge, the side wall 11 and the lower connecting edge form an annular groove, and the anti-splash component 2 is detachably fixed to the annular groove. For example, both the upper connecting edge and the lower connecting edge are perpendicular to the rotation axis.

[0097] In this embodiment, the anti-splash component is detachably connected to the cover body, which can make the anti-splash component an independent part and cooperate with the cover body, and can improve the disassembly, installation or modification convenience of the semiconductor cleaning anti-splash shield.

[0098] In some embodiments, there are multiple anti-splash components 2, and the number and / or radian of the flow guiding fins 201 of each anti-splash component 2 are different. The semiconductor cleaning anti-splash shield can selectively install the anti-splash component 2 adapted to the droplets. Optionally, for different rotation speeds and different droplet viscosities of the wafer 101, etc., anti-splash components 2 with a plurality of flow guiding fins 201 having different numbers and radians can be set to adapt to them. For example, for the wafer 101 with a rotation speed of 400 r / min or 1000 r / min, two anti-splash components 2 can be set.

[0099] By setting multiple anti-splash components 2 in this embodiment, the pertinence and universality of the semiconductor cleaning anti-splash shield to different types of droplets can be improved.

[0100] In some embodiments, as Figure 8 shown, the anti-splash part 20 includes a liquid blocking net 202, and the liquid blocking net 202 is connected between the first circular ring plate 21 and the second circular ring plate 22. The radial distance between the liquid blocking net 202 and the central axis gradually decreases both upward and downward from the horizontal plane where the wafer 101 is located.

[0101] Specifically, the internal gap of the liquid blocking net 202 forms a channel. Specifically, in the horizontal plane where the wafer 101 is located, the radial distance between the liquid blocking net 202 and the central axis is the first distance. In the horizontal plane where the first circular ring plate 21 is located, the radial distance between the liquid blocking net 202 and the central axis is the second distance. In the horizontal plane where the second circular ring plate 22 is located, the radial distance between the liquid blocking net 202 and the central axis is the third distance. The first distance is greater than the second distance and the first distance is greater than the third distance. Optionally, in the longitudinal section, the side shape of the liquid blocking net 202 can be an arc line concave towards the wafer 101, or can be multiple straight lines, or can be a combination of straight lines and arcs, etc.

[0102] Specifically, when the edge cleaning liquid leaves the surface of the wafer 101 due to centrifugal force, the main direction of the droplets is the tangential direction of the wafer 101. However, in three-dimensional space, the velocity direction diverges from the center outwards. The outermost end of the concave liquid blocking net 202 corresponds to the edge cleaning process position of the wafer 101, and the kinetic energy of the droplets is the largest. The inner concave design gradient corresponds to different droplet velocity magnitudes and directions in space. In a limited edge cleaning chamber, the movement path of the droplets is further lengthened. The droplets are affected by air resistance during flight and their kinetic energy decreases. When hitting the net, the velocity decreases, which can reduce the possibility of the droplets being further dispersed into small droplets. Even if there are some splashed-back droplets, due to the farther distance from the surface of the wafer 101, the probability of splashing back to the surface of the wafer 101 is lower.

[0103] Optionally, the liquid blocking net 202 can be further combined with the air extraction holes 5 in the following embodiments to break the liquid surface tension and make the droplets flow down by gravity.

[0104] In some embodiments, the grid density of the liquid blocking net 202 is inversely proportional to the viscosity of the liquid droplets.

[0105] Specifically, the greater the viscosity of the liquid droplets, the smaller the grid density; the smaller the viscosity of the liquid droplets, the denser the grid density. By arranging different numbers of grids corresponding to liquid droplets with different viscosities in this embodiment, it is possible to ensure that the liquid droplets just completely adhere to the grids without being further dispersed into small liquid droplets to generate corrosive acid mists, etc.

[0106] In some embodiments, the liquid blocking net 202 is woven from silk threads or the liquid blocking net 202 is a porous material. Optionally, the silk threads include corrosion-resistant wire bodies or corrosion-resistant fine metal wires, etc.

[0107] In some embodiments, the distance between the wafer 101 and the first annular plate 21 and the second annular plate 22 in the height direction is equal. By setting the wafer at the center of the two annular plates in the height direction in this embodiment, the anti-splash component can fully play its role in the entire height direction.

[0108] In some embodiments, as Figures 1 to 8 shown, the side wall 11 is provided with air extraction holes 5. The air extraction holes 5 are arranged between the first annular plate 21 and the second annular plate 22 in the height direction, and the air extraction holes 5 are configured to form a negative pressure in the accommodation chamber 4.

[0109] Specifically, the air extraction holes 5 are arranged between the first annular plate 21 and the second annular plate 22 to form a negative pressure in the accommodation chamber 4, making it easier for the liquid droplets to enter the accommodation chamber 4. Specifically, after the liquid droplets reach the accommodation chamber 4 through the channel of the anti-splash component 20, their kinetic energy decreases. Under the influence of the negative pressure of the air extraction holes 5 exhausting air, the kinetic energy condition for the liquid droplets to splash back can be eliminated.

[0110] By providing air extraction holes on the side wall in this embodiment, while keeping the flow field in the chamber uniform, the atomized liquid droplets can be evacuated, which can not only prevent the atomized liquid droplets from migrating to the surface of the wafer 101, but also keep the chamber dry.

[0111] In some embodiments, as Figures 1 to 8 shown, the air extraction holes 5 are inclined upward from the inner side of the side wall 11 to the outer side of the side wall 11. The air extraction holes in this embodiment are inclined, which can not only facilitate the evacuation of the atomized liquid droplets, but also make the large liquid droplets sucked into the air extraction holes fall under the action of gravity, avoiding the air extraction holes being blocked by the liquid film due to the suction of large liquid droplets.

[0112] In some embodiments, as Figures 1 to 8 shown, a plurality of air extraction holes 5 are uniformly arranged along the circumferential direction. This embodiment makes the gas flow field in the accommodation chamber and the entire semiconductor cleaning equipment uniform.

[0113] In some specific embodiments, as Figures 1 to 8As shown in the figure, the semiconductor cleaning anti-sputtering shield includes: a shield body 1, an anti-sputtering component 2, a plurality of liquid discharge holes 3, a receiving cavity 4, and an air extraction hole 5. The shield body 1 includes a side wall 11. The side wall 11 is annular and coaxially surrounds the wafer 101. The plurality of liquid discharge holes 3 are evenly spaced along the circumferential direction of the shield body 1. The liquid discharge holes 3 are provided between the side wall 11 and the anti-sputtering component 20. The liquid discharge holes 3 are configured to guide the liquid droplets entering the receiving cavity 4 to the outside of the shield body 1. A liquid discharge groove 30 is provided between the side wall 11 and the anti-sputtering component 20. The liquid discharge holes 3 are provided at the bottom of the liquid discharge groove 30. An air extraction hole 5 is provided on the side wall 11. The air extraction hole 5 slopes upward from the inner side to the outer side of the side wall 11. A plurality of air extraction holes 5 are evenly arranged along the circumferential direction.

[0114] The anti-sputtering component 2 is arranged inside the shield body 1. The anti-sputtering component 2 includes a first circular ring plate 21, a second circular ring plate 22, and an anti-sputtering component 20. The first circular ring plate 21 and the second circular ring plate 22 are both connected to the side wall 11 and are spaced apart from top to bottom in the height direction. The anti-sputtering component 20 includes a plurality of guide vanes 201. The guide vanes 201 are arc-shaped and are connected between the first circular ring plate 21 and the second circular ring plate 22. The plurality of guide vanes 201 are equidistantly arranged along the circumferential direction of the shield body 1. A guide inlet 211 is formed between the first ends of two adjacent guide vanes 201 away from the side wall 11. The guide inlet 211 is configured to face the movement direction of the liquid droplets thrown out by the wafer 101. The radian of the guide vane 201 and the distance between adjacent guide vanes 201 are configured such that the liquid droplets thrown out by the wafer 101 only hit the concave surface of the guide vane 201. The anti-sputtering component 20 and the side wall 11 are spaced apart in the radial direction of the shield body 1 to form an annular receiving cavity 4. A channel for the liquid droplets to enter the receiving cavity 4 is provided between two adjacent guide vanes 201. At least a part of the upper surface of the second circular ring plate 22 slopes downward from the end far from the side wall 11 to the end close to the side wall 11. The liquid discharge groove 30 is lower than the second circular ring plate 22 in the height direction. The air extraction hole 5 is provided between the first circular ring plate 21 and the second circular ring plate 22 in the height direction.

[0115] Specifically, after the liquid droplets hit the guide vane 201, they are completely guided along the concave part of the guide vane 201 into the receiving cavity 4. During the guiding process, the kinetic energy of the liquid droplets decreases and the volume decreases. Under the influence of the air extraction hole 5, the liquid droplets do not have the kinetic energy condition for re-sputtering. In terms of the anti-sputtering angle, the arrangement of the guide vane 201 completely isolates the path that can return to the surface of the wafer 101, so as to trap the liquid droplets in the space between the first end of the guide vane 201 and the side wall 11 of the shield. The large liquid droplets fall under the action of gravity and are discharged through the liquid discharge holes 3. The small liquid droplets are drawn away under the action of the air extraction hole 5.

[0116] Specifically, the anti-splash component 20 can completely solve the problem of liquid droplet anti-splash and maintain a clean cleaning environment. A drain groove 30 is arranged between the anti-splash component 20 and the side wall 11, and drain holes 3 are arranged at the bottom of the drain groove 30 to discharge most of the liquid droplets diverted by the deflector 201, making the liquid flow field in the entire chamber uniform and keeping it dry. The air extraction hole 5 sucks away the acid mist generated during the edge cleaning process, further reducing the corrosion of the surface of the wafer 101, thereby reducing the impact on the flatness of the surface of the wafer 101.

[0117] In this embodiment, the deflector arranged reasonably can solve the problem that the liquid droplets for cleaning the wafer splash back to the surface of the wafer after centrifugal movement, and can also solve the problem that the liquid droplets fall along the side wall to the surface of the wafer during the movement of the shield, avoiding oxidation damage and contamination of the wafer, improving the product yield. At the same time, it can preferably reduce the influence during the normal inspection of the equipment state, enabling the relevant equipment chamber to develop towards a higher integration degree.

[0118] This embodiment can completely divert and extract the liquid droplets after edge cleaning; can compress the size of the edge cleaning chamber to the maximum extent, thereby saving the size of the overall machine tool, reducing the cost of related materials, and reducing the floor area of the whole machine; can keep the environment in the entire chamber in a relatively dry state, reducing the oxidation of related metals, thereby reducing the oxidation damage of the whole wafer and improving the product yield; and can reduce the retest time during the normal machine testing of the machine tool, improve the normal working time of the machine tool, and increase the production capacity.

[0119] Optionally, the angle and spacing of the deflector 201 are adjustable. Optionally, the number, spacing, arrangement mode, etc. of the deflectors 201 can all be adjusted according to the process. Optionally, the anti-splash assembly 2 can also be directly independent as a part and used in cooperation with the cover body.

[0120] Secondly, the present disclosure also provides a semiconductor cleaning device, including the semiconductor cleaning anti-splash shield of the above embodiment.

[0121] The above has introduced in detail a semiconductor cleaning anti-splash shield and a semiconductor cleaning device provided by the present disclosure. Specific embodiments are used herein to elaborate on the principle and implementation manner of the present disclosure. The description of the above embodiments is only used to help understand the method and its core idea of the present disclosure. It should be noted that for those of ordinary skill in the art in this technical field, without departing from the principle of the present disclosure, several improvements and modifications can be made to the present disclosure, and these improvements and modifications also fall within the protection scope of the claims of the present disclosure.

Claims

1. A semiconductor cleaning anti-splash shield, characterized in that, For preventing the back-splash of droplets tangentially thrown out by a rotating wafer (101) and comprising: A cover body (1), including a side wall (11), the side wall (11) being annular and coaxially surrounding the wafer (101); and An anti-back-splash assembly (2), arranged inside the cover body (1), the anti-back-splash assembly (2) including a first circular ring plate (21), a second circular ring plate (22) and an anti-back-splash component (20), the first circular ring plate (21) and the second circular ring plate (22) being both connected to the side wall (11) and arranged at intervals in the height direction from top to bottom, the anti-back-splash component (20) being connected between the first circular ring plate (21) and the second circular ring plate (22), the anti-back-splash component (20) and the side wall (11) being arranged at intervals in the radial direction of the cover body (1) to form an annular receiving cavity (4), and the anti-back-splash component (20) having a channel for droplets to enter the receiving cavity (4).

2. The semiconductor cleaning anti-splash shield according to claim 1, characterized in that, Further comprising: A plurality of drain holes (3), arranged at intervals along the circumference of the cover body (1), the drain holes (3) being arranged between the side wall (11) and the anti-back-splash component (20), and the drain holes (3) being configured to guide the droplets entering the receiving cavity (4) to the outside of the cover body (1).

3. The semiconductor cleaning anti-splash shield according to claim 2, wherein The drain holes (3) are arranged on the second circular ring plate (22), and at least a part of the upper surface of the second circular ring plate (22) slopes downward from the end far from the side wall (11) towards the end close to the side wall (11).

4. The semiconductor cleaning anti-splash shield according to claim 2, characterized in that, A drain groove (30) is arranged between the side wall (11) and the anti-back-splash component (20), the drain groove (30) being lower than the second circular ring plate (22) in the height direction, and the drain holes (3) being arranged at the bottom of the drain groove (30).

5. The semiconductor cleaning anti-splash shield according to claim 1, characterized in that, The anti-back-splash component (20) includes a plurality of guide vanes (201), the guide vanes (201) being arc-shaped and connected between the first circular ring plate (21) and the second circular ring plate (22), the plurality of guide vanes (201) being arranged at equal intervals along the circumference of the cover body (1), and a guide inlet (211) being formed between the first ends of two adjacent guide vanes (201) far from the side wall (11), and the guide inlet (211) being configured to face the movement direction of the droplets thrown out by the wafer (101).

6. The semiconductor cleaning anti-back-splash shield according to claim 5, characterized in that The orientation of the guide inlet (211) is parallel to the movement direction of the droplets thrown out by the wafer (101); and / or The radian of the guide vane (201) and the spacing between adjacent guide vanes (201) are configured such that the droplets thrown out by the wafer (101) only hit the concave surface of the guide vane (201).

7. The semiconductor cleaning anti-splash shield according to claim 5, wherein, The surface roughness of the guide vane (201) is less than a preset roughness, and / or the thickness of the first end of the guide vane (201) is less than a preset thickness.

8. The semiconductor cleaning anti-back-splash shield according to claim 5, characterized in that The number and radian of the guide vanes (201) are both inversely proportional to the viscosity of the droplets; and / or The number of the flow guiding vanes (201) is proportional to the moving speed of the droplets thrown out by the wafer (101).

9. The semiconductor cleaning anti-splash shield according to claim 5, wherein when the viscosity of the droplets is greater than a preset viscosity, the orientation of the flow guiding inlet (211) is parallel to the moving direction of the droplets thrown out by the wafer (101); and / or when the viscosity of the droplets is not greater than the preset viscosity, the orientation of the flow guiding inlet (211) forms a preset included angle with the moving direction of the droplets thrown out by the wafer (101).

10. The semiconductor cleaning anti-splash shield according to claim 5, wherein, The anti-splash component (20) further includes a liquid blocking net (202), and the liquid blocking net (202) is connected between the first circular ring plate (21) and the second circular ring plate (22).

11. The semiconductor cleaning anti-splash shield according to claim 10, wherein the liquid blocking net (202) is arranged along the radial direction inside the plurality of flow guiding vanes (201); and / or the liquid blocking net (202) is arranged between two adjacent flow guiding vanes (201).

12. The semiconductor cleaning anti-splash shield according to claim 5, wherein, The anti-splash assembly (2) is detachably connected to the cover body (1).

13. The semiconductor cleaning anti-splash shield according to claim 12, characterized in that, A plurality of anti-splash assemblies (2) are provided, and the number and / or radian of the flow guiding vanes (201) of each anti-splash assembly (2) are different, and the semiconductor cleaning anti-splash shield can selectively install the anti-splash assembly (2) adapted to the droplets.

14. The semiconductor cleaning anti-splash shield according to claim 1, wherein The anti-splash component (20) includes a liquid blocking net (202), the liquid blocking net (202) is connected between the first circular ring plate (21) and the second circular ring plate (22), and the radial distance between the liquid blocking net (202) and the central axis gradually decreases both upward and downward from the horizontal plane where the wafer (101) is located.

15. The semiconductor cleaning anti-splash shield according to claim 14, wherein The mesh density of the liquid blocking net (202) is inversely proportional to the viscosity of the droplets.

16. The semiconductor cleaning anti-splash shield according to claim 14, wherein, The liquid blocking net (202) is woven by silk threads or the liquid blocking net (202) is a porous material.

17. The semiconductor cleaning anti-splash shield according to any one of claims 1 to 16, characterized in that, The wafer (101) has an equal distance from the first circular ring plate (21) and the second circular ring plate (22) in the height direction.

18. The semiconductor cleaning anti-splash shield according to any one of claims 1 to 16, characterized in that, An air extraction hole (5) is provided on the side wall (11), the air extraction hole (5) is arranged along the height direction between the first circular ring plate (21) and the second circular ring plate (22), and the air extraction hole (5) is configured to form a negative pressure in the accommodation cavity (4).

19. The semiconductor cleaning anti-splash shield according to claim 18, wherein, The air extraction hole (5) inclines upward from the inner side of the side wall (11) to the outer side of the side wall (11); and / or a plurality of air extraction holes (5) are uniformly arranged along the circumferential direction.

20. A semiconductor cleaning device, characterized in that, Including the semiconductor cleaning anti-splash shield according to any one of claims 1 to 19.

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