Chip bonding film and semiconductor device

Abstract

The invention provides a chip bonding film and a semiconductor device. The chip bonding film according to the present invention contains a thermosetting resin as an organic component, has a storage modulus of 200 MPa or more at 150 DEG C after being thermally cured, and has a storage modulus of 200 MPa or more at 150 DEG C after being coated and bonded to a silver-plated copper lead frame and exposed in an environment having a temperature of 85 DEG C and a relative humidity of 60% RH for 168 hours. And the shear adhesive strength at 260 DEG C with respect to the silver-plated copper lead frame is 3 MPa or more.

Description

Technical Field

[0001] The present invention relates to a die-bonding film and a semiconductor device. Background Art

[0002] Conventionally, it is known to use a die bonding film for covering and bonding (die bonding) a semiconductor chip (bare die) to a lead frame as an adherend (for example, Patent Document 1 listed below).

[0003] That is, it is known that the semiconductor chip is cover-bonded (die-bonded) to the lead frame in a state where the die-bonding film is sandwiched therebetween.

[0004] The lead frame generally includes a metal substrate, a plurality of chip mounting regions (die pads) formed on one surface of the metal substrate, and a plurality of lead terminals formed on the one surface of the metal substrate so as to surround the plurality of chip mounting regions, respectively.

[0005] Furthermore, in the lead frame configured as described above, the semiconductor chip is covered and bonded to the chip mounting region (die pad) via the die bonding film.

[0006] In the lead frame constructed as described above, a copper alloy substrate or the like is used as the aforementioned metal substrate, the aforementioned chip mounting area (chip pad) is formed by silver plating or the like on a specified area on one surface of the aforementioned metal substrate, and the aforementioned lead terminal is formed of an aluminum alloy or the like.

[0007] It should be noted that, hereinafter, a structure in which each of the plurality of semiconductor chips is covered and bonded to the plurality of chip mounting regions via the die-bonding film is referred to as a semiconductor device.

[0008] In the semiconductor device, after the electrode portions arranged on the surfaces of the plurality of semiconductor chips are electrically connected to the lead terminals of the lead frame by bonding wires, a molding process is performed so as to completely embed the plurality of semiconductor chips with a molding resin.

[0009] Then, the semiconductor device after the molding process is placed on an electronic circuit board such as a motherboard with a metal material such as tin interposed therebetween, and then subjected to a reflow process for soldering to be performed via the metal material.

[0010] Thus, the semiconductor device after the molding process is mounted on the electronic circuit board such as the motherboard by soldering via the metal material.

[0011] The aforementioned bonding wire is generally formed by processing a gold alloy into a thin wire (hereinafter also referred to as a gold alloy thin wire).

[0012] Furthermore, when a gold alloy thin wire is used as the bonding wire, the electrode portion arranged on the surface of the semiconductor chip is generally made of aluminum which easily forms an intermetallic compound with gold contained in the gold alloy.

[0013] Furthermore, in order to more fully form the intermetallic compound between gold and aluminum, the connection between the gold alloy thin wire as the bonding wire and the electrode portion of the semiconductor chip is performed by ultrasonic bonding after heating the lead frame at 150 to 200°C.

[0014] The above-mentioned reflow process is usually performed using a reflow furnace. Specifically, the above-mentioned reflow process is performed while the semiconductor device after the molding process passes through the inside of the reflow furnace.

[0015] Furthermore, in order to achieve sufficient solder bonding and to fully melt the metal material such as tin, the reflow process is performed under the condition that the maximum temperature inside the reflow furnace becomes 260°C.

[0016] Prior art literature

[0017] Patent Literature

[0018] Patent Document 1: Japanese Patent Application Publication No. 2011-23607 Summary of the invention

[0019] Problem that the invention aims to solve

[0020] However, as described above, when the bonding wire is connected to the electrode portion of the semiconductor chip by ultrasonic bonding, the semiconductor chip may be violently vibrated by the irradiated ultrasonic wave, resulting in poor connection between the bonding wire and the electrode portion of the semiconductor chip.

[0021] Furthermore, in recent years, there has been a growing demand for miniaturization and thinning of the semiconductor chip.

[0022] Furthermore, as the planar size of the semiconductor chip is reduced in accordance with the desire for miniaturization, or as the thickness of the semiconductor chip is reduced in accordance with the desire for thinning, the influence of vibration on the semiconductor chip caused by the ultrasonic wave irradiated during ultrasonic bonding becomes greater.

[0023] Furthermore, after the above-mentioned reflow process, the die-bonding film may float up from the chip mounting region of the lead frame.

[0024] That is, the bonding state of the die-bonding film to the lead frame may not be sufficiently maintained.

[0025] Moreover, the above-mentioned problem of being unable to fully maintain the adhesion state of the chip bonding film relative to the lead frame will occur particularly significantly when the semiconductor device before the reflow process is exposed to a high temperature and high humidity environment for a long time, for example, when it is exposed to an environment with a temperature of 85°C and a relative humidity of 60% RH for about 168 hours.

[0026] Therefore, it is expected to suppress poor connection of the bonding wire to the electrode portion of the semiconductor chip and to sufficiently maintain the adhesion of the die bonding film to the lead frame even after the reflow process, but it is difficult to say that these have been fully studied.

[0027] Therefore, the subject of the present invention is to provide a chip bonding film that can both suppress poor connection of the bonding lead relative to the electrode portion of the semiconductor chip and fully maintain the bonding state relative to the lead frame after the reflow process, and to provide a semiconductor device having the chip bonding film.

[0028] Solutions for solving problems

[0029] As a result of intensive research, the inventors of the present invention have discovered that, in a chip bonding film containing a thermosetting resin as an organic component, by making the storage modulus at a relatively high temperature after thermal curing to be above a specified value, and further, by making the shear adhesion at a high temperature relative to the adherend to be above a specified value after being exposed to a high temperature and high humidity environment in a state of being covered and bonded to a silver-plated copper lead frame, the above-mentioned two problems can be solved at the same time, and thus the present invention was conceived.

[0030] That is, the die-bonding film according to the present invention is a die-bonding film containing a thermosetting resin as an organic component.

[0031] After thermal curing, the storage modulus at 150°C is above 200 MPa.

[0032] The die bonding film was exposed to an environment of a temperature of 85° C. and a relative humidity of 60% RH for 168 hours while being bonded to a silver-plated copper lead frame, and the shear bonding strength to the silver-plated copper lead frame at 260° C. was 3 MPa or more.

[0033] The semiconductor device according to the present invention comprises:

[0034] A lead frame having at least one chip mounting area for mounting a semiconductor chip;

[0035] at least one die bonding film, which covers and bonds to at least one of the chip mounting regions; and

[0036] at least one semiconductor chip covered and bonded to at least one of the die-bonding films,

[0037] The aforementioned die bonding film is the die bonding film described above,

[0038] The lead frame is a silver-plated copper lead frame. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a perspective view showing the structure of the die-bonding film according to one embodiment of the present invention.

[0040] Figure 2 This is a cross-sectional view for explaining a usage example of the die-bonding film according to one embodiment of the present invention.

[0041] Figure 3 It is a cross-sectional view showing the structure of a dicing die-bonding film including the die-bonding film according to one embodiment of the present invention.

[0042] Figure 4A This is a cross-sectional view schematically showing a half-cut process in one method of manufacturing a semiconductor integrated circuit.

[0043] Figure 4B This is a cross-sectional view schematically showing a half-cut process in one method of manufacturing a semiconductor integrated circuit.

[0044] Figure 4C This is a cross-sectional view schematically showing a backside grinding process in one method of manufacturing a semiconductor integrated circuit.

[0045] Figure 4D This is a cross-sectional view schematically showing a backside grinding process in one method of manufacturing a semiconductor integrated circuit.

[0046] Figure 5A It is a cross-sectional view schematically showing a fixing process in a method for manufacturing a semiconductor integrated circuit.

[0047] Figure 5B It is a cross-sectional view schematically showing a fixing process in a method for manufacturing a semiconductor integrated circuit.

[0048] Fig. 6A This is a cross-sectional view schematically showing a state of a low-temperature extension step in a method for manufacturing a semiconductor integrated circuit.

[0049] Figure 6B This is a cross-sectional view schematically showing a state of a low-temperature extension step in a method for manufacturing a semiconductor integrated circuit.

[0050] Figure 6C This is a cross-sectional view schematically showing a state of a low-temperature extension step in a method for manufacturing a semiconductor integrated circuit.

[0051] Fig. 7A This is a cross-sectional view schematically showing a state of an extension step at room temperature in one method of manufacturing a semiconductor integrated circuit.

[0052] Figure 7B This is a cross-sectional view schematically showing a state of an extension step at room temperature in one method of manufacturing a semiconductor integrated circuit.

[0053] Figure 8 This is a cross-sectional view schematically showing a state of a cutout maintaining step in a method for manufacturing a semiconductor integrated circuit.

[0054] Fig. 9 This is a cross-sectional view schematically showing a pickup process in a method for manufacturing a semiconductor integrated circuit.

[0055] Fig.10 It is a cross-sectional view schematically showing a state of a fixing step in another method of manufacturing a semiconductor integrated circuit.

[0056] Fig.11 This is a cross-sectional view schematically showing a dicing step in another method of manufacturing a semiconductor integrated circuit.

[0057] Fig.12 This is a cross-sectional view schematically showing a pickup step in another method of manufacturing a semiconductor integrated circuit.

[0058] Fig.13 It is a cross-sectional view schematically showing a state where a semiconductor chip (bare die) is bonded to an adherend via a die-bonding film.

[0059] Fig.14 It is a cross-sectional view showing the structure of a semiconductor device according to one embodiment of the present invention.

[0060] Description of Reference Numerals

[0061] 1: base material layer, 2: adhesive layer, 10: die bonding film, 20: semiconductor chip, 30: adherend, 40: dicing tape, 50: dicing die bonding film, 100: semiconductor device, 110: lead frame, 120: mold resin, 130: bonding wire,

[0062] 110a: chip mounting area, 110b: metal substrate, 110c: lead terminal,

[0063] A: adherend, G: back grinding tape, H: holding tool, J: suction tool, P: pin member, R: dicing ring, T: wafer processing tape, U: lift member, W: semiconductor wafer, DB: dicing plate, TA: work table. DETAILED DESCRIPTION

[0064] Hereinafter, one embodiment of the present invention will be described.

[0065] [Die-bonding film]

[0066] like Figure 1 As shown, the die-bonding film 10 according to the present embodiment is in a sheet shape and contains a thermosetting resin as an organic component.

[0067] Furthermore, the die-bonding film 10 according to the present embodiment has a storage elastic modulus of 200 MPa or more at 150° C. after thermal curing.

[0068] Furthermore, when the chip bonding film 10 described in this embodiment is covered and bonded to a silver-plated copper frame lead, after being exposed to an environment of a temperature of 85°C and a relative humidity of 60% RH for 168 hours, the shear adhesion strength relative to the aforementioned silver-plated copper lead frame at 260°C is greater than 3 MPa.

[0069] It should be noted that, in this specification, the aforementioned silver-plated copper lead frame refers to a lead frame having a metal substrate and a plurality of chip mounting areas (chip pads) formed on a surface of the metal substrate, the aforementioned metal substrate is made of copper, and the aforementioned plurality of chip mounting areas are formed by silver plating.

[0070] The die-bonding film 10 according to the present embodiment is generally in the form of a long tape, and is stored in a state of being wound into a roll, that is, in a state of being a roll.

[0071] like Figure 2 As shown, the die-bonding film 10 according to the present embodiment is used for cover-bonding (die-bonding) a semiconductor chip (bare die) 20 to an adherend 30 such as a lead frame.

[0072] Specifically, the die-bonding film 10 according to the present embodiment is used in a state where one surface 10A is bonded to the semiconductor chip 20 and the other surface 10B is bonded to the adherend 30 .

[0073] The lead frame is preferably the silver-plated copper lead frame.

[0074] That is, the die-bonding film 10 is preferably used to cover and bond the semiconductor chip 20 to the aforementioned silver-plated copper lead frame.

[0075] It should be noted that on the exposed surface of the semiconductor chip (bare die) 20, specifically on the opposite side of the coated bonding surface that is coated and bonded to the chip bonding film 10, there is at least one electrode portion (not shown), and the aforementioned electrode portion is connected to one end side of a bonding lead such as a gold alloy fine wire.

[0076] Specifically, the electrode portion is ultrasonically bonded to one end of a bonding wire such as a gold alloy thin wire at any temperature within a range of 150 to 200°C.

[0077] In addition, when the semiconductor chip 20 is covered and bonded to the chip mounting area (chip pad) of the lead frame by means of the chip bonding film 10, as described in the above-mentioned background technology, ultrasonic bonding with one end side of the bonding lead is performed by heating the lead frame at any temperature in the range of 150 to 200°C.

[0078] As described above, the die-bonding film 10 according to the present embodiment shows a high value of 200 MPa or more in storage modulus at 150° C. after thermal curing.

[0079] That is, the die-bonding film 10 according to the present embodiment shows sufficient hardness at a temperature of 150° C. after thermal curing.

[0080] When one end of a bonding wire such as a gold alloy thin wire is connected to an electrode portion of the semiconductor chip 20 by ultrasonic bonding as described above, the ultrasonic bonding is performed at any temperature within the range of 150 to 200°C.

[0081] The die-bonding film 10 according to the present embodiment exhibits sufficient hardness at a temperature of 150° C., and therefore can sufficiently suppress the semiconductor chip 20 from vibrating violently due to ultrasonic waves irradiated during ultrasonic bonding.

[0082] Therefore, the die-bonding film 10 according to the present embodiment can suppress the occurrence of poor connection of the bonding wire with respect to the electrode portion of the semiconductor chip 20 .

[0083] Furthermore, by reducing the thickness of the semiconductor chip 20 in response to a desire for thinning, even if the mechanical strength of the semiconductor chip 20 is reduced, it is possible to suppress damage such as cracking of the thinned semiconductor chip 20 caused by ultrasonic waves irradiated during ultrasonic bonding.

[0084] Furthermore, as described above, the chip bonding film 10 described in this embodiment, when covered and bonded to a silver-plated copper lead frame, is exposed to an environment of a temperature of 85°C and a relative humidity of 60% RH for 168 hours, and has a shear adhesion strength of 3 MPa or more relative to the aforementioned silver-plated copper lead frame at 260°C.

[0085] That is, the chip bonding film 10 described in this embodiment can show sufficient shear adhesion to the aforementioned silver-plated copper lead frame even when it is subjected to a reflow treatment at a temperature of 260°C after being exposed to a high temperature and high humidity environment for a long time in a state of being covered and bonded to the aforementioned silver-plated copper lead frame.

[0086] Therefore, the die-bonding film 10 according to the present embodiment can sufficiently maintain the adhesion state with respect to the lead frame even after the reflow process.

[0087] The storage elastic modulus of the die-bonding film 10 at 150° C. after thermal curing can be obtained as follows.

[0088] In detail, a chip bonding film with a length of 40 mm (measurement length), a width of 10 mm and a thickness of 200 μm is used as a test piece. Then, after heating at a temperature of 150°C for 1 hour, it is further heated at a temperature of 175°C for 1 hour to implement a heat curing treatment. In addition, using a solid viscoelasticity measuring device (for example, model RSAIII, manufactured by Rheometric Scientific), the storage modulus (tensile storage modulus) of the above-mentioned test piece is measured in a temperature range of 0°C to 280°C under the conditions of a frequency of 10 Hz, a strain of 0.1%, a heating rate of 10°C / min, and a distance between chucks of 22.5 mm.

[0089] The above measurement is performed by stretching the test piece in the longitudinal direction. The storage modulus at 150°C can be obtained by reading the value at 150°C.

[0090] The storage elastic modulus at 150° C. is preferably 250 MPa or more, more preferably 300 MPa or more, and even more preferably 400 MPa or more.

[0091] By setting the lower limit of the storage elastic modulus at 150° C. to the above value, it is possible to more fully suppress the semiconductor chip 20 from vibrating violently due to ultrasonic waves irradiated during ultrasonic bonding. This can further suppress poor connection of the bonding wire to the electrode portion of the semiconductor chip 20 .

[0092] In addition, the storage modulus at 150°C may be 2000 MPa or less, 1500 MPa or less, or 1000 MPa or less. By setting the upper limit of the storage modulus at 150°C to the above-mentioned value, the die bonding film 10 can be prevented from becoming too hard at the temperature of 150°C. Thus, even if the thickness of the semiconductor chip 20 is reduced and the mechanical strength of the semiconductor chip 20 is reduced in accordance with the desire for thinning, it is possible to further prevent the thinned semiconductor chip 20 from being broken or damaged due to the ultrasonic waves irradiated during ultrasonic bonding.

[0093] The storage modulus at 150°C can be appropriately adjusted by, for example, changing the epoxy equivalent of the epoxy resin, the hydroxy equivalent of the phenolic resin, or the content of the filler (silica filler, etc.) in the die bonding film 10. For example, the storage modulus at 150°C can be further increased by further reducing the epoxy equivalent of the epoxy resin, further reducing the hydroxy equivalent of the phenolic resin, or increasing the content of the filler.

[0094] The shear adhesion to a silver-plated copper lead frame at 260° C. can be measured by the following procedure.

[0095] (1) A die bonding film having a planar size of 5 mm×5 mm was applied to a chip mounting region (formed by silver plating) on ​​a copper lead frame to obtain a laminate. The die bonding of the die bonding film was performed using a die bonder (manufactured by FASFORD TECHNOLOGY, trade name “die bonder DB830plus+”) at a temperature of 130° C., a load of 0.2 MPa, and a bonding time of 2 seconds.

[0096] (2) The laminated body was heated at 150° C. for 1 hour, and then further heated at 175° C. for 1 hour, thereby thermally curing the die-bonding film.

[0097] (3) The laminated body after thermally curing the die-bonding film was exposed to an environment of a temperature of 85° C. and a relative humidity of 60% RH for 168 hours to obtain a test body for shear adhesive strength measurement.

[0098] (4) Using a shear tester (manufactured by Dage, trade name "Dage 4000"), the shear adhesion strength of the test body relative to the silver-plated copper lead frame was measured under the following conditions: a measuring speed (bare die shear speed) of 500 μm / s, a measuring pitch (bare die shear height) of 50 μm, and a platform temperature of 260°C.

[0099] The shear adhesive strength of the laminate before exposure to an environment of a temperature of 85° C. and a relative humidity of 60% RH, that is, the laminate after undergoing the above (2) can be measured according to the above (4).

[0100] The shear adhesive strength with respect to the silver-plated copper lead frame at 260° C. is preferably 4 MPa or more, more preferably 5 MPa or more.

[0101] By setting the lower limit of the shear adhesion strength relative to the silver-plated copper lead frame at 260°C to the above-mentioned value, the chip bonding film 10 can exhibit more sufficient shear adhesion strength relative to the silver-plated copper lead frame even when it is subjected to a reflow soldering process at a temperature of 260°C after being exposed to a high temperature and high humidity environment for a long time in a state of being covered and bonded to the aforementioned silver-plated copper lead frame.

[0102] Thereby, the die-bonding film 10 can maintain a more sufficient adhesion state with respect to the lead frame even after the reflow process.

[0103] In addition, the upper limit of the shear adhesive strength with respect to the silver-plated copper lead frame at 260° C. is generally 30 MPa.

[0104] The shear adhesion can be adjusted by, for example, changing the monomer units of the acrylic polymer (described later) that may be included in the die bonding film 10. For example, by making the acrylic polymer include a monomer unit that has a stronger interaction with the functional groups present on the lead frame surface in the molecule, the shear adhesion can be further increased.

[0105] The die-bonding film 10 according to the present embodiment preferably has a melt viscosity at 120° C. of 100 Pa·s or more.

[0106] As described above, by setting the melt viscosity at 120° C. to a high value, the die-bonding film 10 can suppress excessive increase in fluidity even at a high temperature of 120° C., and as a result, can have excellent shape retainability.

[0107] That is, the die-bonding film 10 can sufficiently maintain the film shape even at a high temperature of 120° C.

[0108] Here, as described above, the die-bonding film 10 is used in a state where one surface 10A is covered and bonded to the semiconductor chip 20 , and the other surface 10B is covered and bonded to the adherend 30 .

[0109] Furthermore, the covering and bonding of the other surface 10B to the adherend 30 is usually performed in a high temperature environment of 100 to 130°C.

[0110] As described above, the die bond film 10 according to this embodiment can exhibit the above-mentioned characteristics even at a high temperature of 120° C., and therefore can sufficiently maintain the film shape even in a high temperature environment (100 to 130° C.) such as when the other surface 10B is bonded to the adherend 30 .

[0111] That is, the die-bonding film 10 can be bonded to the adherend 30 with the other surface 10B being bonded to the one surface 10A being bonded to the semiconductor chip 20 while the film shape is sufficiently maintained.

[0112] Therefore, in the case where the adherend 30 is a lead frame as described above, when one end side of a bonding lead such as a gold alloy fine wire is ultrasonically bonded to an electrode portion of the semiconductor chip 20, it is possible to suppress the installation position of the semiconductor chip 20 in the chip mounting area (chip pad) of the lead frame from changing due to the irradiated ultrasonic wave, that is, to suppress the occurrence of chip displacement.

[0113] The melt viscosity at 120°C is more preferably 200 Pa·s or more, further preferably 1000 Pa·s or more, and further preferably 2000 Pa·s or more.

[0114] By setting the lower limit of the melt viscosity at 120° C. to the above-mentioned value, the die-bonding film 10 can further maintain the film shape.

[0115] Thus, the die-bonding film 10 can further suppress the variation in the mounting position of the semiconductor chip 20 in the chip mounting region (die pad) of the lead frame, that is, suppress the occurrence of chip displacement.

[0116] The melt viscosity at 120° C. may be 10,000 Pa·s or less, 8,000 Pa·s or less, or 6,000 Pa·s or less.

[0117] Here, when the adherend 30 is a silver-plated copper lead frame, the chip mounting region is formed by silver plating in a form protruding from the surface of the metal substrate composed of copper, and thus, irregularities may be formed on the surface of the metal substrate. By setting the upper limit of the melt viscosity at 120° C. to the above value, the die bonding film 10 can easily follow the irregularities formed on the surface of the metal substrate provided on the silver-plated copper lead frame.

[0118] The melt viscosity can be further increased by, for example, increasing the filler content in the die-bonding film 10 or increasing the molecular weight of the thermoplastic resin. On the other hand, the melt viscosity can be further reduced by reducing the filler content in the die-bonding film 10 or reducing the molecular weight of the thermoplastic resin.

[0119] The melt viscosity at 120° C. can be measured by a parallel plate method using a rheometer (“HAAKEMARS III” manufactured by Themo Fisher Scientific). Specifically, the melt viscosity can be measured by the following procedure.

[0120] (1) A test piece was sandwiched between a heating hot plate and a parallel plate (8 mm in diameter) arranged parallel to the hot plate. It should be noted that a test piece was used in which a 300 μm thick die bonding film was punched into a circular shape using an 8 mm diameter punch. In addition, the spacing between the plates was set to 250 μm.

[0121] (2) The melt viscosity at 120° C. is measured for the test piece under the conditions of a heating rate of 10° C. / min, a frequency of 1 Hz, a strain of 10%, and a temperature range of 75 to 150° C. Specifically, the melt viscosity at 120° C. can be determined by reading the value at 120° C.

[0122] As described above, the die-bonding film 10 according to the present embodiment contains a thermosetting resin as an organic component. That is, the die-bonding film 10 according to the present embodiment contains a thermosetting resin, and thus has a property of being thermally cured.

[0123] In the chip bonding film 10 described in the present embodiment, the proportion of the aforementioned thermosetting resin in the total mass of the aforementioned organic component is preferably 20 mass % or more, more preferably 30 mass % or more, further preferably 40 mass % or more, further preferably 50 mass % or more, further preferably 60 mass % or more, and further preferably 60 mass % or more.

[0124] The ratio of the thermosetting resin to the total mass of the organic component is preferably 95% by mass or less, more preferably 90% by mass or less, and even more preferably 85% by mass or less.

[0125] Examples of the thermosetting resin include epoxy resins, phenolic resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting polyimide resins.

[0126] Among these, the aforementioned thermosetting resin is preferably at least one of the aforementioned epoxy resin and the aforementioned phenolic resin. The aforementioned thermosetting resin more preferably includes both the aforementioned epoxy resin and the aforementioned phenolic resin. That is, in the die bonding film 10 described in this embodiment, the aforementioned thermosetting resin more preferably includes the aforementioned epoxy resin and the aforementioned phenolic resin.

[0127] Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, hydrogenated bisphenol A epoxy resin, bisphenol AF epoxy resin, biphenyl epoxy resin, naphthalene epoxy resin, fluorene epoxy resin, phenol novolac epoxy resin, o-cresol epoxy resin, trihydroxyphenylmethane epoxy resin, tetraphenol ethane epoxy resin, hydantoin epoxy resin, triglycidyl isocyanurate epoxy resin, and glycidylamine epoxy resin.

[0128] The epoxy resin preferably has an epoxy equivalent of 230 g / eq or less, more preferably 200 g / eq or less, further preferably 180 g / eq or less, and further preferably 170 g / eq or less.

[0129] By setting the upper limit of the epoxy equivalent to the above value, the epoxy resin has a large number of epoxy groups in its structure. As a result, the die bonding film 10 exhibits a high crosslinking density after thermal curing. As a result, it is possible to more fully suppress the semiconductor chip 20 from vibrating violently due to the ultrasonic waves irradiated during ultrasonic bonding.

[0130] The epoxy resin may have an epoxy equivalent of 100 g / eq or more, 120 g / eq or more, or 150 g / eq or more.

[0131] The epoxy equivalent of the epoxy resin can be determined in accordance with JIS K 7236:2009.

[0132] Examples of the phenolic resin include novolac phenolic resins, resol phenolic resins, and polyoxystyrenes such as polyparaoxystyrene. When the phenolic resin is used in combination with the epoxy resin, the phenolic resin also functions as a curing agent for the epoxy resin.

[0133] The phenol resin preferably has a hydroxyl equivalent of 170 g / eq or less, more preferably 150 g / eq or less, and further preferably 130 g / eq or less.

[0134] By setting the upper limit of the hydroxyl equivalent to the above value, the phenolic resin has a large number of hydroxyl groups in its structure. As a result, the die bonding film 10 exhibits a high crosslinking density after thermal curing. As a result, it is possible to more fully suppress the semiconductor chip 20 from vibrating violently due to the ultrasonic waves irradiated during ultrasonic bonding.

[0135] The phenol resin may have a hydroxyl equivalent of 80 g / eq or more, 90 g / eq or more, or 100 g / eq or more.

[0136] The hydroxyl equivalent of the phenol resin can be determined in accordance with JIS K 0070:1992.

[0137] When the epoxy resin and the phenol resin are used in combination, the mass ratio of the epoxy resin is preferably 40 parts by mass or more, more preferably 50 parts by mass or more, and even more preferably 60 parts by mass or more, relative to 100 parts by mass of the total of the epoxy resin and the phenol resin.

[0138] The mass ratio of the epoxy resin may be 90 parts by mass or less, 80 parts by mass or less, or 70 parts by mass or less.

[0139] The die bonding film 10 described in this embodiment may contain a heat-curing catalyst (curing accelerator) from the viewpoint of fully carrying out the curing reaction of the thermosetting resin or increasing the curing reaction speed. Examples of the heat-curing catalyst include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds.

[0140] The die-bonding film 10 according to the present embodiment may contain an acrylic polymer as the organic component.

[0141] The acrylic polymer has the property of having less ionic impurities and high heat resistance. Therefore, by including the acrylic polymer in the die-bonding film 10 , the die-bonding film 10 can have sufficient connection reliability with respect to an adherend such as the semiconductor chip 20 or the lead frame.

[0142] The acrylic polymer is classified as a thermoplastic resin and functions as a binder.

[0143] The acrylic polymer is preferably a polymer containing, as monomer units, the largest amount of monomer units derived from a (meth)acrylic acid ester in terms of mass ratio.

[0144] As (meth)acrylate, a linear alkyl (meth)acrylate, a cycloalkyl (meth)acrylate, an aryl (meth)acrylate, etc. are mentioned, for example.

[0145] The acrylic polymer may contain monomer units derived from other components copolymerizable with (meth)acrylate. Examples of the other components include monomers containing carboxyl groups, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile, and other monomers containing various functional groups (including multifunctional monomers).

[0146] In the die-bonding film 10 according to the present embodiment, the acrylic polymer is preferably a copolymer of acrylic acid (AA), acrylonitrile (AN), butyl acrylate (BA), and ethyl acrylate (EA).

[0147] The acrylic polymers may be used alone or in combination of two or more.

[0148] In the die-bonding film 10 according to the present embodiment, the ratio of the acrylic polymer to the total mass of the organic component is preferably 15 mass % or more and 55 mass % or less.

[0149] When the ratio of the acrylic polymer is within the above numerical range, it is easy to adjust the melt viscosity value at 120° C. and the storage modulus at 150° C. of the die-bonding film.

[0150] The ratio of the acrylic polymer to the total mass of the organic component may be 20% by mass or more, or 25% by mass or more.

[0151] The ratio of the acrylic polymer to the total mass of the organic component may be 50% by mass or less, 45% by mass or less, 40% by mass or less, or 35% by mass or less.

[0152] The acrylic polymer preferably has an acid value of 0.1 mgKOH / g or more.

[0153] The acrylic polymer more preferably has an acid value of 1.0 mgKOH / g or more, and further preferably has an acid value of 5.0 mgKOH / g or more.

[0154] The acrylic polymer may have an acid value of 35 mgKOH / g or less, an acid value of 25 mgKOH / g or less, or an acid value of 15 mgKOH / g or less.

[0155] The acid value of the acrylic polymer can be measured as follows.

[0156] (1) Accurately weigh about 10 g of an acrylic acid-based polymer into a 100 mL conical flask.

[0157] (2) Toluene was added to a 100 mL conical flask to dissolve or suspend the acrylic acid polymer, thereby obtaining a liquid containing the acrylic acid polymer.

[0158] (3) After adding 5 drops of phenolphthalein indicator to the liquid containing the acrylic polymer, titration is performed with a 0.1 mol / L alcoholic potassium hydroxide solution (an ethanol solution in which potassium hydroxide is dissolved at a concentration of 0.1 mol / L) to determine the titration amount A.

[0159] (4) A blank solution, that is, toluene in which the acrylic acid-based polymer is not dissolved or suspended, is also titrated using a 0.1 mol / L alcoholic potassium hydroxide solution to determine a titration amount B.

[0160] (5) The acid value was calculated using the following calculation formula.

[0161] Calculation formula: Acid value = ((AB) × F × 0.1 × 56.1) / (W × N) × 100

[0162] It should be noted that A, B, F, W and N are as follows.

[0163] A: Amount of 0.1 mol / L alcoholic potassium hydroxide solution required for titration of the liquid containing acrylic acid polymer (mL)

[0164] B: The amount of 0.1 mol / L alcoholic potassium hydroxide solution required for the titration of the blank solution (mL)

[0165] F: Factor of 0.1 mol / L alcoholic potassium hydroxide solution

[0166] W: The mass of the acrylic polymer measured accurately (g)

[0167] N: Solid content (%)

[0168] The acrylic polymer preferably has a mass average molecular weight Mw of 1.4 million or less, and has a functional group that can react with at least one of the epoxy resin and the phenol resin.

[0169] The mass average molecular weight Mw of the acrylic polymer is preferably 1.3 million or less, and more preferably 1.2 million or less.

[0170] The mass average molecular weight Mw of the acrylic polymer is preferably 20,000 or more, more preferably 40,000 or more, and even more preferably 100,000 or more.

[0171] The mass average molecular weight Mw of the acrylic polymer can be measured by GPC under the following conditions.

[0172] ·Measurement device: Made by Waster Co., Ltd., model "Alliance GPC 2000"

[0173] Column: Two TSKgel GMH6-HT (manufactured by Tosoh Corporation) were connected in series, and two TSKgel GMH-HTL were further connected in series on the downstream side.

[0174] Column size: TSKgel GMH6-HT and TSKgel GMH-HTL are both 7.5mm inner diameter x 300mm length

[0175] Column temperature: 140°C

[0176] Flow rate: 1.0mL / min

[0177] ·Eluent: o-dichlorobenzene

[0178] Sample preparation concentration: 0.10 mass% (dissolved in o-dichlorobenzene)

[0179] Sample injection volume: 40μL

[0180] Detector: RI (differential refractometer)

[0181] Standard sample: polystyrene

[0182] As the functional group of the acrylic polymer, a carboxyl group can be mentioned, for example.

[0183] The carboxyl group is a functional group that can react with the glycidyl group (epoxy group) of the epoxy resin, and is also a functional group that can react with the hydroxyl group of the phenol resin.

[0184] That is, the carboxyl group is a functional group that can react with the epoxy resin and the phenol resin.

[0185] In addition, in this specification, the functional group which can react with at least one of the said epoxy resin and the said phenol resin refers to the said carboxyl group or glycidyl group, etc.

[0186] The die-bonding film 10 according to the present embodiment may contain a thermoplastic resin other than the above-mentioned acrylic polymer.

[0187] Examples of thermoplastic resins other than the aforementioned acrylic polymers include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymers, ethylene-acrylic acid copolymers, ethylene-acrylate copolymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as polyamide 6 or polyamide 6,6, phenoxy resins, acrylic polymers, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluororesins.

[0188] The above-mentioned thermoplastic resins may be used alone or in combination of two or more.

[0189] The resin composition preferably contains 3 parts by mass or more and 80 parts by mass or less of the acrylic polymer based on 100 parts by mass of the total of the thermosetting resin and the thermoplastic resin.

[0190] The resin composition may contain 5 parts by mass or more, 10 parts by mass or more, or 20 parts by mass or more of the acrylic polymer based on 100 parts by mass of the total of the thermosetting resin and the thermoplastic resin.

[0191] The resin composition may contain 70 parts by mass or less, 60 parts by mass or less, or 50 parts by mass or less of the acrylic polymer based on 100 parts by mass of the total of the thermosetting resin and the thermoplastic resin.

[0192] The die-bonding film 10 according to the present embodiment may contain an inorganic filler as an inorganic component.

[0193] Examples of the inorganic filler include fillers including aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, and silicon dioxide such as crystalline silicon dioxide or amorphous silicon dioxide.

[0194] Examples of the material of the inorganic filler include single metals such as aluminum, gold, silver, and nickel, or alloys thereof.

[0195] The aforementioned inorganic filler may be aluminum borate whisker, amorphous carbon black, graphite, or the like.

[0196] Among the various fillers mentioned above, a silica filler composed of silicon dioxide is preferably used. The silica filler may be a filler whose surface is treated with a silane coupling agent such as epoxy silane.

[0197] The inorganic filler may be in various shapes such as spherical, needle-like, and flake-like. Among these various shapes, a spherical shape is preferred.

[0198] The above-mentioned inorganic fillers may be used alone or in combination of two or more.

[0199] In the die-bonding film 10 , the ratio of the inorganic filler to the total mass of the organic component and the inorganic component is preferably 30% by mass or more and 60% by mass or less.

[0200] By setting the ratio of the inorganic filler to be within the above numerical range, the storage modulus of the die-bonding film 10 at 150° C. can be easily adjusted.

[0201] The ratio of the inorganic filler to the total mass of the organic component and the inorganic component is more preferably 35% by mass or more, and even more preferably 40% by mass or more.

[0202] The ratio of the inorganic filler to the total mass of the organic component and the inorganic component is more preferably 55% by mass or less, and even more preferably 50% by mass or less.

[0203] The average particle size of the inorganic filler is preferably 0.005 μm (5 nm) or more and 10 μm (10000 nm) or less, and more preferably 0.005 μm (5 nm) or more and 1 μm (1000 nm) or less.

[0204] When the average particle size of the inorganic filler is 0.005 μm or more, the wettability and adhesiveness with respect to an adherend such as a semiconductor wafer or a semiconductor chip can be further improved.

[0205] Furthermore, by setting the average particle size of the inorganic filler to 10 μm or less, the properties of the contained filler can be more fully exhibited, and the heat resistance of the die-bonding film 10 can be further exhibited.

[0206] The average particle size of the inorganic filler can be measured by dynamic light scattering (DLS).

[0207] Specifically, the inorganic filler is dispersed in methyl ethyl ketone (MEK) so that the solid content concentration becomes 1 mass % or less to prepare a sample for particle size measurement, and the average particle size of the inorganic filler in the sample for particle size measurement is measured using a dynamic light scattering photometer (model "ZEN3600": manufactured by Sysmex Corporation).

[0208] In addition, the sample for particle size measurement may be treated with an ultrasonic homogenizer for 2 minutes before measurement.

[0209] The die-bonding film 10 according to the present embodiment preferably has a glass transition temperature Tg of 140° C. or higher after thermal curing.

[0210] By setting the glass transition temperature Tg after thermal curing to 140° C. or higher, the connection reliability of the die-bonding film 10 to the adherend 30 such as a lead frame can be improved.

[0211] The glass transition temperature Tg of the die-bonding film 10 after thermal curing is more preferably 150° C. or higher, and further preferably 160° C. or higher.

[0212] In addition, the glass transition temperature Tg of the die-bonding film 10 after thermal curing may be 210° C. or lower, 200° C. or lower, or 190° C. or lower.

[0213] The glass transition temperature Tg of the die-bonding film 10 after thermal curing can be determined using a solid viscoelasticity measuring apparatus (for example, model RSAIII, manufactured by Rheometric Scientific).

[0214] It should be noted that the measurement using the solid viscoelasticity measuring device can be implemented in the same manner as the measurement of the storage modulus described above. In addition, the temperature equivalent to the peak temperature of the loss tangent tanδ (loss modulus / storage modulus) obtained in the above measurement is obtained as the glass transition temperature Tg. As described above, since the solid viscoelasticity measuring device is used for measurement after the thermal curing treatment, the value of the glass transition temperature Tg obtained becomes the glass transition temperature Tg after thermal curing.

[0215] The glass transition temperature Tg can be further increased by, for example, further increasing the crosslinking density of the thermosetting resin after curing in the die bonding film 10. For example, the glass transition temperature Tg can be further increased by increasing the proportion of glycidyl groups in the epoxy resin or increasing the proportion of hydroxyl groups in the phenolic resin.

[0216] The thickness of the die-bonding film 10 is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The thickness may be 3 μm or more and 150 μm or less, or 5 μm or more and 100 μm or less.

[0217] The thickness of the die-bonding film 10 can be determined by, for example, measuring the thickness at five points selected at random using a micrometer (manufactured by PEACOCK, Model R-205) and calculating the arithmetic average of the thicknesses.

[0218] As described above, the chip bonding film 10 can be obtained by the following operations: a resin composition containing various components is dissolved or suspended in an organic solvent (e.g., methyl ethyl ketone (MEK)) to obtain an adhesive composition, the adhesive composition is applied to the surface of a resin film etc. using an applicator etc., and the applied adhesive composition is dried to thereby obtain the chip bonding film 10.

[0219] The resin film is preferably a release film (release liner) at least one side of which is subjected to a release treatment. When the release film is used as the resin film, the adhesive composition is preferably applied to the release treated surface.

[0220] [Dicing Die Bonding Film]

[0221] The dicing die-bonding film 50 according to this embodiment is as follows. Figure 3 As shown, the dicing tape 40 is provided, wherein the adhesive layer 2 is laminated on the base material layer 1 , and the die-bonding film 10 is laminated on the adhesive layer 2 with a part of the adhesive layer 2 exposed.

[0222] In the dicing die-bonding film 50 according to the present embodiment, the die-bonding film 10 according to the present embodiment is used as the die-bonding film 10 .

[0223] In dicing the die-bonding film 50 , a semiconductor wafer is attached to the die-bonding film 10 .

[0224] When the semiconductor wafer is cut using the dicing die-bonding film 50, the die-bonding film 10 is also cut together with the semiconductor wafer. Figure 2 As shown in FIG. 1 , the die-bonding film 10 is cut into pieces corresponding to the sizes of the plurality of singulated semiconductor chips. Thus, singulated semiconductor chips with the die-bonding film 10 can be obtained.

[0225] The base layer 1 supports the adhesive layer 2. The base layer 1 is produced using a metal foil, a fiber sheet, a rubber sheet, a resin film, or the like.

[0226] The base material layer 1 is preferably made of a resin film. The base material layer 1 may have a single layer structure or a laminated structure.

[0227] The fiber sheet is made of, for example, paper, woven fabric, or nonwoven fabric.

[0228] Examples of the material of the resin film include polyolefins such as polyethylene, polypropylene, and ethylene-propylene copolymers; copolymers of ethylene such as ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester random copolymers, and ethylene-(meth)acrylic acid ester alternating copolymers; polyesters such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyacrylates; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide; polyamides such as aliphatic polyamides and wholly aromatic polyamides (aromatic polyamides); polyetheretherketone; polyimide; polyetherimide; polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymer); cellulose or cellulose derivatives; silicone-containing polymers; fluorine-containing polymers, etc.

[0229] These may be used alone or in combination of two or more.

[0230] When the base material layer 1 is made of a resin film, the base material layer 1 may be obtained by non-stretching molding or by stretching molding, and is preferably obtained by stretching molding.

[0231] From the viewpoint of improving the adhesion with the pressure-sensitive adhesive layer 2 , the surface of the base material layer 1 on which the pressure-sensitive adhesive layer 2 is to be laminated (hereinafter also simply referred to as the surface) may be subjected to a surface treatment.

[0232] As the surface treatment, chromic acid treatment, oxidation treatment by chemical methods such as ozone exposure, flame exposure, high voltage electric shock exposure, ionizing radiation treatment, or physical methods, etc. can be used.

[0233] In addition, as the surface treatment, coating treatment can be performed using a coating agent such as an anchor coating agent, a primer, or an adhesive.

[0234] In order to improve the releasability, the surface of the substrate layer 1 on which the pressure-sensitive adhesive layer 2 is not laminated (hereinafter also referred to as the back side) may be coated with a release agent (release agent) such as silicone resin or fluororesin.

[0235] The thickness of the base layer 1 is preferably 55 μm to 195 μm, more preferably 55 μm to 190 μm, further preferably 55 μm to 170 μm, and most preferably 60 μm to 160 μm. By setting the thickness of the base layer 1 to the above range, the dicing tape 40 can be efficiently manufactured.

[0236] In addition, the die-bonding film 10 of the dicing die-bonding film 50 can be diced efficiently.

[0237] The thickness of the base material layer 1 can be determined by, for example, measuring the thickness at five points selected at random using a micrometer (manufactured by PEACOCK, Model No. R-205) and calculating the arithmetic average of these thicknesses.

[0238] In the dicing die-bonding film 50 according to the present embodiment, the adhesive layer 2 has adhesiveness and can hold the die-bonding film 10 by bonding the die-bonding film 10. The adhesive layer 2 exhibits the above-mentioned adhesiveness because it contains an adhesive.

[0239] Examples of the adhesive include an adhesive whose adhesive force can be reduced by an external action during use of the dicing die-bonding film 50 (hereinafter referred to as an adhesive reducing type adhesive).

[0240] When an adhesive of an adhesion-reducing type is used as an adhesive, a state in which the adhesive layer 2 exhibits a high adhesive force (hereinafter referred to as a high adhesive state) and a state in which the adhesive layer 2 exhibits a low adhesive force (hereinafter referred to as a low adhesive state) can be distinguished during the use of the dicing die bonding film 50. For example, when a semiconductor wafer attached to the die bonding film 10 of the dicing die bonding film 50 is cut, the high adhesive state is used to suppress the plurality of semiconductor chips singulated by cutting the semiconductor wafer from floating or peeling off from the adhesive layer 2.

[0241] On the other hand, after the semiconductor wafer is cut, the low adhesion state is used to facilitate picking up the plurality of individual semiconductor chips from the adhesive layer 2 .

[0242] Examples of the adhesion-reducing adhesive include adhesives that can be cured by irradiation with active energy rays (hereinafter referred to as active energy ray-curing adhesives) during use of the dicing die-bonding film 50. That is, the adhesion-reducing adhesive contains a curing component that is cured by irradiation with active energy rays.

[0243] Examples of the active energy ray-curable adhesive include adhesives that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X rays. Among these, adhesives that are cured by ultraviolet irradiation (ultraviolet curable adhesives) are preferably used.

[0244] Examples of the active energy ray-curable adhesive include an additive-type active energy ray-curable adhesive comprising a base polymer as a main component and an active energy ray-polymerizable monomer component or oligomer component having a functional group such as an active energy ray-polymerizable carbon-carbon double bond.

[0245] As the base polymer, an acrylic polymer is preferably used.

[0246] It should be noted that the base polymer undergoes a polymerization reaction by irradiation with active energy rays, and the molecules are cross-linked with each other, thereby reducing the adhesive force of the pressure-sensitive adhesive layer 2 .

[0247] Examples of the acrylic polymer include polymers containing monomer units derived from (meth)acrylates, such as linear alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates.

[0248] As the aforementioned monomer unit derived from (meth)acrylate, for example, 2-hydroxyethyl acrylate (HEA), ethyl acrylate (EA), butyl acrylate (BA), 2-ethylhexyl acrylate (2EHA), isononyl acrylate (iNA), lauryl acrylate (LA), 4-acryloylmorpholine (AMCO), 2-isocyanatoethyl=methacrylate (MOI) and the like are preferably used.

[0249] The (meth)acrylic acid ester-derived monomer unit may be used alone or in combination of two or more.

[0250] In the acrylic polymer, as the monomer unit derived from the (meth)acrylate, it is preferred that the monomer unit include each of 2-ethylhexyl acrylate (2EHA), 2-hydroxyethyl acrylate (HEA), and 2-isocyanatoethyl=methacrylate (MOI).

[0251] The acrylic polymer may further include, as the (meth)acrylic acid ester-derived monomer units, monomer units of lauryl acrylate (LA) or isononyl acrylate (iNA) in addition to the monomer units of 2EHA, HEA and MOI.

[0252] The pressure-sensitive adhesive layer 2 may contain an external crosslinking agent. The external crosslinking agent is not particularly limited as long as it can react with the base polymer (eg, acrylic polymer) to form a crosslinked structure.

[0253] Examples of such an external crosslinking agent include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

[0254] Examples of the active energy ray-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate.

[0255] Examples of the active energy ray polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, or polybutadiene. The content ratio of the active energy ray polymerizable monomer component or active energy ray polymerizable oligomer component in the active energy ray curable adhesive is selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

[0256] The active energy ray-curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include azo compounds, α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketones, acylphosphine oxides, and acylphosphonates.

[0257] Examples of the azo compound include azobisisobutyronitrile (AIBN).

[0258] When the pressure-sensitive adhesive layer 2 contains an external cross-linking agent, the pressure-sensitive adhesive layer 2 preferably contains 0.1% by mass or more and 3% by mass or less of the external cross-linking agent.

[0259] When the pressure-sensitive adhesive layer 2 contains a photopolymerization initiator, the pressure-sensitive adhesive layer 2 preferably contains 0.1% by mass or more and 10% by mass or less of the photopolymerization initiator.

[0260] The adhesive layer 2 may contain, in addition to the above-mentioned components, a cross-linking accelerator, a thickener, an antioxidant, a colorant such as a pigment or a dye, and the like.

[0261] The thickness of the adhesive layer 2 is preferably 1 μm or more and 50 μm or less, more preferably 2 μm or more and 45 μm or less, and further preferably 5 μm or more and 40 μm or less.

[0262] The thickness of the pressure-sensitive adhesive layer 2 can be determined by, for example, measuring the thickness at five randomly selected points using a micrometer (manufactured by PEACOCK, Model R-205) and calculating the arithmetic average of these thicknesses.

[0263] As described above, the adhesive layer 2 can be obtained by applying an adhesive composition containing various components onto the surface of a resin film or the like using an applicator or the like, and then drying the applied adhesive composition.

[0264] The peeling force between the chip bonding film 10 and the adhesive layer 2 of the dicing tape 40 is preferably 0.10 [N / 20mm] or more, more preferably greater than 0.10 [N / 20mm], and further preferably 0.15 [N / 20mm] or more. By making the peeling force larger, the phenomenon of the semiconductor chip with the chip bonding film flying away from the adhesive layer (chip scattering) can be further suppressed in the cutting process, for example, described in detail later. The peeling force is preferably 0.35 [N / 20mm] or less, and more preferably 0.30 [N / 20mm] or less. By making the peeling force smaller, the semiconductor chip with the chip bonding film can be picked up more reliably in the picking process, for example, described in detail later.

[0265] It should be noted that when the adhesive layer 2 includes the above-mentioned active energy ray-curable adhesive, the above-mentioned peeling force refers to: after sufficient irradiation with active energy rays (for example, at 300 mJ / cm 2 The peeling force between the adhesive layer 2 and the die-bonding film 10 (irradiated with ultraviolet rays of an intensity of 10).

[0266] The peeling force is measured by performing a T-type peeling test at 23° C. and a peeling speed of 300 mm / min. The peeling angle during the test is 90 degrees.

[0267] It should be noted that the above description is about an adhesive whose adhesive force can be reduced by external action during use of the dicing die bonding film 50 (adhesion reducing adhesive), but the invention is not limited to this adhesive. The adhesive may be a pressure sensitive adhesive that is not cured by irradiation with active energy rays.

[0268] Moreover, attachment of the die-bonding film 10 to the adhesive layer 2 can be performed by laminating the adhesive layer 2 and the die-bonding film 10 produced as described above.

[0269] Note that, after laminating the die-bonding film 10 with the resin film bonded on one side and the pressure-sensitive adhesive layer 2 , the resin film may be peeled off from one side of the die-bonding film 10 .

[0270] The dicing die-bonding film 50 according to the present embodiment can be used as, for example, an auxiliary tool for manufacturing a semiconductor integrated circuit. Hereinafter, a specific example of the use of the dicing die-bonding film 50 will be described.

[0271] Hereinafter, an example in which a dicing die-bonding film 50 including a single base material layer 1 is used will be described.

[0272] The method for manufacturing a semiconductor integrated circuit includes the following steps, for example: a half-cutting step of forming a groove on a semiconductor wafer in order to process the semiconductor wafer into a chip (bare die) by cutting; a back grinding step of grinding the semiconductor wafer after the half-cutting step to reduce the thickness; a fixing step of attaching one side (for example, the side opposite to the circuit side) of the semiconductor wafer after the back grinding step to a die bonding film 10 and fixing the semiconductor wafer to a dicing tape 40; an extending step of widening the interval between semiconductor chips; a cut maintaining step of maintaining the interval between semiconductor chips; a picking up step of peeling the die bonding film 10 and the adhesive layer 2 to take out the semiconductor chip (bare die) in a state where the die bonding film 10 is attached; and a die bonding step of bonding the semiconductor chip (bare die) in a state where the die bonding film 10 is attached to an adherend. When performing these steps, the dicing tape (dicing die bonding film) of the present embodiment is used as a manufacturing auxiliary tool.

[0273] In the half-cut process, Figure 4A and Figure 4B As shown in FIG. 1 , a half-cutting process is performed to cut a semiconductor integrated circuit into small pieces (bare chips). Specifically, a wafer processing tape T is attached to the surface of the semiconductor wafer W opposite to the circuit surface, and a dicing ring R is attached to the wafer processing tape T (see FIG. 1 ). Figure 4A ). A dividing groove is formed with the wafer processing tape T attached (see Figure 4B ). In the back grinding process, such as Figure 4C and Figure 4D As shown in FIG. 1 , the semiconductor wafer is ground to reduce its thickness. Specifically, a back grinding tape G is attached to the surface where the grooves are formed, and on the other hand, a wafer processing tape T attached in advance is peeled off (see FIG. 1 ). Figure 4C ). With the back grinding tape G attached, the semiconductor wafer W is ground until a predetermined thickness is reached (see Figure 4D ).

[0274] In the fixing process, Figure 5A to Figure 5B As shown in FIG. 1 , after the dicing ring R is attached to the adhesive layer 2 of the dicing tape 40, the semiconductor wafer W (see FIG. 1 ) which has been half-cut is attached to the exposed surface of the die-bonding film 10. Figure 5A ). Thereafter, the back grinding tape G is peeled off from the semiconductor wafer W (see Figure 5B ).

[0275] In the extension process, Figure 6A to Figure 6C As shown in FIG. 1 , the dicing ring R is fixed to the holding tool H of the stretching device. The dicing die bonding film 50 is lifted from the lower side using the lifting member U provided in the stretching device, thereby stretching the dicing die bonding film 50 so as to expand in the surface direction (see FIG. 1 ). Figure 6B ). Thus, the semiconductor wafer W that has been half-cut is cut under a specific temperature condition. The temperature condition is, for example, -20°C to 5°C, preferably -15°C to 0°C, and more preferably -10°C to -5°C. The extended state is released by lowering the lifting member U (refer to Figure 6C ).

[0276] Furthermore, in the stretching process, Figure 7A to Figure 7B As shown, under a higher temperature condition (eg, room temperature (23±2° C.)), the dicing tape 40 is stretched to expand the area. Thus, the diced adjacent semiconductor chips are torn apart in the plane direction of the film surface, and the interval is further widened.

[0277] In the incision maintenance process, Figure 8 As shown, hot air (eg, 100° C. to 130° C., indicated by dotted arrows) is applied to the dicing tape 40 to heat-shrink the dicing tape 40, and then the dicing tape 40 is cooled and solidified to maintain the distance (cut) between adjacent semiconductor chips being cut.

[0278] In the picking process, Fig. 9 As shown, the semiconductor chip with the die-bonding film 10 attached thereto is peeled off from the adhesive layer 2 of the dicing tape 40. Specifically, the pin member P is raised to lift up the semiconductor chip to be picked up through the dicing tape 40. The lifted semiconductor chip is held by the suction tool J.

[0279] In the die bonding step, the semiconductor chip with the die bonding film 10 attached thereto is bonded to an adherend.

[0280] The method for manufacturing a semiconductor integrated circuit may include, for example, the following steps: a fixing step, in which a semiconductor wafer is adhered to a chip bonding film 10 of a cutting chip bonding film 50, and the semiconductor wafer is fixed to the cutting chip bonding film 50; a cutting step, in which the semiconductor wafer fixed to the cutting chip bonding film 50 is cut to obtain a plurality of semiconductor chips (bare chips); a picking step, in which the chip bonding film 10 and the adhesive layer 2 are peeled off to take out the semiconductor chip (bare chip) in a state where the chip bonding film 10 is adhered thereto; and a chip bonding step, in which the semiconductor chip (bare chip) in a state where the chip bonding film 10 is adhered thereto is bonded to an adherend.

[0281] When performing each of these steps, the dicing die-bonding film 50 according to the present embodiment is also used as a manufacturing auxiliary tool.

[0282] In the fixing process, Fig.10 As shown in FIG. 1 , the semiconductor wafer W is fixed to the dicing die-bonding film 50 placed on the table TA of the dicing apparatus.

[0283] More specifically, after the dicing die-bonding film 50 is placed on the stage TA so that the base material layer 1 contacts the stage TA, the semiconductor wafer W is attached to the die-bonding film 10 of the dicing die-bonding film 50 .

[0284] During the cutting process, Fig.11 As shown, the semiconductor wafer W is cut into a plurality of semiconductor chips (bare dies) 20 having a predetermined size using a cutting board DB of a cutting device.

[0285] More specifically, the semiconductor wafer W is cut into a grid pattern using a cutting board DB so as to obtain a plurality of semiconductor chips (bare dies) 20 having substantially the same size in a plan view.

[0286] Note that, after the dicing step is performed and before the pickup step is performed, a cleaning step of cleaning the semiconductor chip (bare die) 20 side using a cleaning liquid such as water may be performed.

[0287] In the picking process, Fig.12 As shown in the figure, the semiconductor chip (bare die) 20 to which the die bonding film 10 is attached is peeled off from the adhesive layer 2 of the dicing die bonding film 50. Specifically, the pin member P is raised to lift the semiconductor chip (bare die) 20 to be picked up through the dicing die bonding film 50. The lifted semiconductor chip (bare die) 20 is held by the suction tool J.

[0288] When the adhesive layer 2 contains an active energy ray-curing adhesive, it is preferably irradiated with active energy rays such as radiation. The intensity of the active energy rays to be irradiated is appropriately selected depending on the type of the active energy ray-curing adhesive.

[0289] Thereby, since the affinity between the pressure-sensitive adhesive layer 2 and the die-bonding film 10 can be made low, it is easy to recover the semiconductor chip (bare die) 20 in a state where the die-bonding film 10 is attached.

[0290] The pickup step is performed using, for example, a die bonder.

[0291] It should be noted that in Fig.12 In the figure, the member indicated by symbol U is a lifting member of the die bonder, the member indicated by symbol R is a dicing ring, and the member indicated by symbol H is a holding tool of the die bonder.

[0292] In the chip bonding process, Fig.13 As shown, the semiconductor chip (bare die) 20 to which the die-bonding film 10 is attached is bonded to the adherend A using the suction jig J.

[0293] Specifically, the die bonding step is performed by pressing the semiconductor chip (bare die) 20 from above with a suction jig J after the die bonding film 10 is brought into contact with the adherend A.

[0294] It should be noted that when the semiconductor chip (bare die) 20 is mounted on the adherend via the die bonding film 10, the planar dimensions of the die bonding film 10 and the planar dimensions of the semiconductor chip (bare die) 20 are substantially the same when viewed from above (see FIG. Fig.13 ).

[0295] The die bonding step is also performed using, for example, a die bonder.

[0296] [Semiconductor devices]

[0297] like Fig.14 As shown, the semiconductor device 100 described in this embodiment comprises: a lead frame 110, which has at least one chip mounting area 110a for mounting a semiconductor chip 20; at least one chip bonding film 10, which is covered and bonded to at least one chip mounting area 110a; and at least one semiconductor chip 20, which is covered and bonded to a single side of at least one chip bonding film 10.

[0298] In the semiconductor device 100 described in the present embodiment, as described above, the die bonding film 10 contains a thermosetting resin as an organic component. In addition, the storage modulus of the die bonding film 10 at 150° C. after thermal curing is 200 MPa or more. Furthermore, when the die bonding film 10 is covered and bonded to a silver-plated copper lead frame, and exposed to an environment of a temperature of 85° C. and a relative humidity of 60% RH for 168 hours, the shear adhesion strength with respect to the aforementioned silver-plated copper lead frame at 260° C. is 3 MPa or more.

[0299] In the semiconductor device 100 described in this embodiment, Fig.14 As shown, the lead frame 110 includes a metal substrate 110 b , and at least one chip mounting region 110 a is arranged on one surface of the metal substrate 110 b .

[0300] In the semiconductor device 100 according to the present embodiment, the lead frame 110 includes at least one lead terminal 110 c formed on one surface of the metal substrate 110 b so as to surround at least one chip mounting region 110 a .

[0301] Furthermore, in the semiconductor device 100 according to the present embodiment, at least one semiconductor chip 20 and the lead terminal 110 c are connected via the bonding wire 130 .

[0302] In the semiconductor device 100 according to the present embodiment, the semiconductor chip 20 arranged in the chip mounting region 110 a of the lead frame 110 is entirely embedded in the mold resin 120 .

[0303] Matters disclosed in this specification include the following matters.

[0304] (1) A die-bonding film comprising a thermosetting resin as an organic component,

[0305] After thermal curing, the storage modulus at 150°C is above 200 MPa.

[0306] The die bonding film was exposed to an environment of a temperature of 85° C. and a relative humidity of 60% RH for 168 hours while being bonded to a silver-plated copper lead frame, and the shear bonding strength to the silver-plated copper lead frame at 260° C. was 3 MPa or more.

[0307] According to the die-bonding film having the above configuration, it is possible to achieve both the ability to suppress poor connection of the bonding wire to the electrode portion of the semiconductor chip and the ability to sufficiently maintain the bonding state to the lead frame even after the reflow process.

[0308] (2) The die-bonding film according to (1) above, wherein the melt viscosity at 120° C. is 100 Pa·s or more.

[0309] (3) The die-bonding film according to (1) or (2) above, further comprising an acrylic polymer as the organic component,

[0310] The ratio of the acrylic polymer to the total mass of the organic component is 15 mass % or more and 55 mass % or less.

[0311] (4) The die-bonding film according to the above (3), wherein the acrylic polymer has an acid value of 0.1 mgKOH / g or more.

[0312] (5) The die-bonding film according to any one of (1) to (4) above, further comprising an inorganic filler as an inorganic component,

[0313] The ratio of the inorganic filler to the total mass of the organic component and the inorganic component is 30 mass % or more and 60 mass % or less.

[0314] (6) The die-bonding film according to any one of (1) to (5) above, comprising an epoxy resin and a phenol resin as the thermosetting resin,

[0315] The epoxy resin has an epoxy equivalent of 170 g / eq or less,

[0316] The phenol resin has a hydroxyl equivalent of 170 g / eq or less.

[0317] (7) The die-bonding film according to any one of (1) to (6) above, wherein the glass transition temperature Tg after thermal curing is 140° C. or higher.

[0318] (8) The die-bonding film according to any one of (1) to (7) above, which is used for covering and bonding a semiconductor chip to a silver-plated copper lead frame.

[0319] (9) A semiconductor device comprising:

[0320] A lead frame having at least one chip mounting area for mounting a semiconductor chip;

[0321] at least one die bonding film, which covers and bonds to at least one of the chip mounting regions; and

[0322] at least one semiconductor chip covered and bonded to at least one of the die-bonding films,

[0323] The die-bonding film is the die-bonding film according to any one of (1) to (7) above,

[0324] The lead frame is a silver-plated copper lead frame.

[0325] It should be noted that the chip bonding film and semiconductor device of the present invention are not limited to the aforementioned embodiments. In addition, the chip bonding film and semiconductor device of the present invention are not limited by the aforementioned effects. The chip bonding film and semiconductor device of the present invention can be variously modified within the scope of the present invention.

[0326] Example

[0327] Next, the present invention will be described in more detail with reference to the following examples. The following examples are used to describe the present invention in more detail, but are not intended to limit the scope of the present invention.

[0328] The details of each component shown in Table 1 used to obtain the die-bonding film are as follows.

[0329] Organic Ingredients

[0330] <Acrylic polymer>

[0331] ·First acrylic polymer

[0332] Nagase ChemteX Co., Ltd., trade name "SG-708-6" (mass average molecular weight 700,000, acid value 9 mgKOH / g)

[0333] ·Second acrylic polymer

[0334] Trade name "1HM-2045" manufactured by Dacheng Fine Chemicals Co., Ltd. (mass average molecular weight 130,000, acid value 1.8 mgKOH / g)

[0335] ·The third acrylic polymer

[0336] NAGASE CHEMTEX Co., Ltd., trade name "SG-70L" (mass average molecular weight 900,000, acid value 5 mgKOH / g)

[0337] ·The fourth acrylic polymer

[0338] Trade name "SG-N50" manufactured by NAGASECHEMTEX (mass average molecular weight 400,000, acid value 35 mgKOH / g)

[0339] ·Fifth acrylic polymer

[0340] Negami Industries, trade name "AC-019" (mass average molecular weight: 1.1 million, acid value: 0 mgKOH / g)

[0341] <Epoxy resin>

[0342] ·First Epoxy Resin

[0343] Trade name "EPPN-501HY" manufactured by Nippon Kayaku Co., Ltd. (multifunctional epoxy resin, epoxy equivalent 163 to 175 g / eq)

[0344] Second epoxy resin

[0345] Trade name "JER (registered trademark) 828" manufactured by Mitsubishi Chemical Corporation (epoxy equivalent: 184 to 194 g / eq)

[0346] ·Third epoxy resin

[0347] Trade name "JER (registered trademark) YL980" manufactured by Mitsubishi Chemical Corporation (epoxy equivalent: 180 to 190 g / eq)

[0348] ·Fourth Epoxy Resin

[0349] Product name: "EPICLON (registered trademark) N-665-EXP-S" manufactured by DIC Corporation (cresol novolac type epoxy resin, epoxy equivalent of 200 to 210 g / eq)

[0350] Fifth epoxy resin

[0351] Product name: "EPICLON (registered trademark) HP-7200L" manufactured by DIC Corporation (epoxy equivalent: 230 to 260 g / eq)

[0352] <Phenolic resin>

[0353] ·The first phenolic resin

[0354] "LVR-8210DL" manufactured by Gun-Ei Chemical Industry Co., Ltd. (novolak type phenolic resin, hydroxyl equivalent 104 g / eq)

[0355] · Second phenolic resin

[0356] Arakawa Chemical Co., Ltd., trade name "P-180" (hydroxyl equivalent: 105 g / eq)

[0357] ·The third phenolic resin

[0358] Trade name "MEH-8005" manufactured by Meiwa Chemicals Co., Ltd. (hydroxyl equivalent: 135 g / eq)

[0359] ·The fourth phenolic resin

[0360] Trade name "MEHC-7800H" manufactured by Meiwa Chemicals Co., Ltd. (hydroxyl equivalent: 180 g / eq)

[0361] ·Fifth phenolic resin

[0362] Trade name "MEHC-7851SS" manufactured by Meiwa Chemicals Co., Ltd. (hydroxyl equivalent: 218 g / eq)

[0363] Inorganic ingredients

[0364] <Inorganic filler>

[0365] ·First inorganic filler

[0366] ADMATECHS trade name "SE-2050MCV" (spherical silica filler, average particle size 0.5 μm)

[0367] Second inorganic filler

[0368] ADMATECHS trade name "SO-25R" (silica filler, average particle size 0.5 μm)

[0369] [Example 1]

[0370] (Die Bonding Film)

[0371] The organic component (the first acrylic polymer, the first epoxy resin, and the first phenolic resin) and the inorganic component (the first inorganic filler) were suspended or dissolved in methyl ethyl ketone according to the blending ratio shown in Table 1 to obtain a first adhesive composition.

[0372] The first adhesive composition was filtered using a 400-mesh (38 μm mesh) twill-textured SUS (stainless steel) sieve to obtain a second adhesive composition. Thereafter, the second adhesive composition was applied to a silicone release-treated surface of a PET separator (50 μm thick) having a silicone release-treated surface using an applicator to a thickness of 20 μm to form a coating film. The coating film was subjected to a desolventizing treatment at 120° C. for 2 minutes.

[0373] Thus, a die-bonding film having a thickness (average thickness) of 20 μm was produced on the PET separator, and the die-bonding film with a PET separator described in Example 1 was obtained.

[0374] (Dicing Die Bonding Film)

[0375] <Synthesis of Acrylic Polymer for Adhesive Layer>

[0376] In a reaction vessel equipped with a condenser, a nitrogen inlet pipe, a thermometer and a stirring device, a mixture containing 98 mol parts of 2-ethylhexyl acrylate (2EHA), 20 mol parts of 2-hydroxyethyl acrylate (HEA), benzoyl peroxide as a polymerization initiator and toluene as a polymerization solvent was stirred at 60° C. for 10 hours under a nitrogen atmosphere (polymerization reaction).

[0377] In this mixture, the content of benzoyl peroxide was 0.4 parts by mass based on 100 parts by mass of the monomer component, and the content of toluene was 80 parts by mass based on 100 parts by mass of the monomer component.

[0378] Through the above-mentioned polymerization reaction, a first polymer solution containing a first acrylic polymer is obtained.

[0379] Next, 16 parts by mole of 2-methacryloyloxyethyl isocyanate (MOI) was added to the first polymer solution, and then the mixture was stirred at 50° C. for 60 hours in an air atmosphere (addition reaction).

[0380] Thereby, the second polymer solution containing the second acrylic polymer having a methacryloyl group in a side chain is obtained.

[0381] <Preparation of Adhesive Composition>

[0382] To the second polymer solution, 0.05 parts by mass of a crosslinking agent (trade name "CORONATE L", a polyisocyanate compound, manufactured by Tosoh Corporation) and 2 parts by mass of a first photopolymerization initiator (trade name "Irgacure 127", manufactured by BASF Corporation) were added and mixed to obtain a pressure-sensitive adhesive composition based on 100 parts by mass of the second acrylic polymer.

[0383] <Production of cutting tape>

[0384] The adhesive composition was applied to the silicone release treated surface of a PET separator (50 μm thick) using an applicator and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 30 μm.

[0385] Thereafter, a film made of ethylene-vinyl acetate copolymer (EVA) (trade name "ODZ5", thickness 80 μm, manufactured by Okura Industries) was attached to the pressure-sensitive adhesive layer at room temperature as a substrate layer.

[0386] The dicing tape described in Example 1 was obtained by the above operation.

[0387] <Production of Dicing Die Bonding Film>

[0388] First, the die-bonding film with a PET separator described in Example 1 was punched into a circular shape with a diameter of 330 mm.

[0389] Next, the PET separator was removed from the dicing tape described in Example 1 to expose one surface of the adhesive layer, and the exposed surface of the die-bonding film with the PET separator was overlapped with the exposed surface of the adhesive layer at room temperature (23±2° C.).

[0390] Then, a laminate was obtained by laminating using a roll laminator, and the laminate was punched into a circular shape having a diameter of 370 mm, thereby obtaining the dicing die-bonding film described in Example 1.

[0391] That is, the dicing die-bonding film described in Example 1 is constituted by laminating a film made of ethylene-vinyl acetate copolymer (EVA), an adhesive layer, a die-bonding film, and a PET separator in this order.

[0392] The lamination was performed using a roll laminator at a lamination speed of 10 mm / sec, a temperature of 23±2° C., and a pressure of 0.15 MPa.

[0393] [Examples 2 to 6]

[0394] (Die Bonding Film)

[0395] Except having changed the compounding amount of the organic component and the inorganic component as shown in Table 1, it carried out similarly to Example 1, and obtained the die-bonding film with PET separator as described in each Example.

[0396] (Dicing Die Bonding Film)

[0397] The dicing die-bonding film described in each Example was obtained in the same manner as in Example 1 except that the die-bonding film with a PET separator described in each Example was used.

[0398] [Comparative Examples 1 to 7]

[0399] (Die Bonding Film)

[0400] Except having changed the compounding amount of the organic component and the inorganic component as shown in Table 1, it carried out similarly to Example 1, and obtained the die-bonding film with PET separator as each comparative example.

[0401] (Dicing Die Bonding Film)

[0402] The dicing die-bonding film described in each comparative example was obtained in the same manner as in Example 1 except that the die-bonding film with a PET separator described in each comparative example was used.

[0403] [Table 1]

[0404]

[0405] Note: The proportion of the total amount of organic and inorganic components

[0406] (Storage modulus at 150°C)

[0407] The storage modulus at 150° C. was measured for the die-bonding film described in each example.

[0408] The storage modulus at 150° C. was measured according to the procedure described in the first embodiment.

[0409] (Shear adhesion at 260°C)

[0410] The shear adhesive strength of the die-bonding film according to each example at 260° C. with respect to a silver-plated copper lead frame was measured.

[0411] The shear adhesive strength at 260° C. was measured according to the procedure described in the first embodiment.

[0412] In addition, the shear adhesive strength at 260° C. was measured for the laminated bodies of each example in which the die bonding film was bonded to the chip mounting region (formed by silver plating) on ​​the copper lead frame before exposure to an environment of a temperature of 85° C. and a relative humidity of 60% RH for 168 hours. The results are also shown in Table 2.

[0413] As can be understood from Table 2, the die-bonding films according to the respective Examples showed a high value of 3 MPa or more in shear adhesive strength at 260° C. even after moisture absorption.

[0414] (Melt viscosity at 120°C)

[0415] The melt viscosity at 120° C. was measured for the die-bonding film described in each example.

[0416] The melt viscosity at 120° C. was measured according to the procedure described in the first embodiment.

[0417] (Glass transition temperature of die-bonding film)

[0418] The glass transition temperature of the die-bonding film described in each example was measured.

[0419] The glass transition temperature was measured according to the procedure described in the first embodiment. The results are shown in Table 2.

[0420] (Peel force)

[0421] The peeling force of the dicing die-bonding film of each example with respect to the dicing tape (adhesive layer) was measured by a T-type peel test. The adhesive layer was fully irradiated with active energy rays (ultraviolet rays), and then the peeling force was measured.

[0422] The peeling force was measured using a tensile tester (manufactured by Shimadzu Corporation, trade name "AGS-J") at a measurement temperature of 23°C and a tensile speed of 300 mm / min. The results are shown in Table 2.

[0423] [Table 2]

[0424]

[0425] <Adhesion status (reliability) to substrate (lead frame or organic substrate)>

[0426] For the cut chip bonding film described in each example, the bonding state relative to the lead frame is evaluated. As the lead frame, a silver-plated copper lead frame is used. It should be noted that in the copper lead frame, the silver-plated area constitutes the chip mounting area (chip pad). The evaluation of the bonding state relative to the lead frame is implemented according to the following steps.

[0427] (1) A silicon bare wafer having a thickness of 50 μm was attached to the dicing die-bonding film described in each example under the conditions of a temperature of 70° C. and a pressure of 0.1 MPa.

[0428] (2) Using a dicing device (manufactured by DISCO, trade name "DFD6361"), the silicon bare wafer and the die-bonding film of each example were diced into a size of 2 mm x 2 mm in planar dimensions to obtain a plurality of semiconductor chips with die-bonding films.

[0429] (3) Using a die bonding apparatus (manufactured by FASFORD TECHNOLOGY, trade name "die bonder 830plus+"), the semiconductor chip with the die bonding film described in each example was coated and bonded to the chip mounting area (die pad) of the aforementioned copper lead frame under the conditions of a temperature of 130°C, a load of 0.2 MPa, and a bonding time of 2 seconds.

[0430] This was repeated 10 times, and the semiconductor chip with the die-bonding film described in each example was cover-bonded to each of the 10 chip mounting regions (die pads) in the copper lead frame, thereby obtaining the lead frame with the semiconductor chip described in each example.

[0431] (4) Using a molding resin (thermosetting resin), all the semiconductor chips in the lead frame with semiconductor chips described in each example are embedded to obtain the lead frame with semiconductor chips. The embedded lead frame with semiconductor chips is then heated at a temperature of 175°C for 5 hours to obtain a test body for evaluating the bonding state described in each example.

[0432] (5) After treating the test specimens for bonding state evaluation described in each of the above examples using moisture absorption reflow conditions (based on JEDEC Level 2 / IR at 260deg.C), an ultrasonic imaging device (trade name "Hybrid SAT" manufactured by Hitachi-Power-Solutions) was used to evaluate the degree of peeling of the chip bonding film from the chip mounting area (chip pad) in the above copper lead frame, that is, the bonding state relative to the lead frame.

[0433] The bonding state with respect to the lead frame was evaluated based on the following criteria.

[0434] Good: No peeling of the die-bonding film was observed in any of the 10 chip mounting regions (die pads).

[0435] Good: No peeling of the die-bonding film was observed in 8 or 9 chip mounting regions (die pads). That is, peeling of the die-bonding film was observed in 1 or 2 chip mounting regions (die pads).

[0436] Acceptable: No peeling of the die-bonding film was observed in 5 or more and 7 or less chip mounting regions (die pads). In other words, peeling of the die-bonding film was observed in 3 or more and 5 or less chip mounting regions (die pads).

[0437] Failure: No peeling of the die-bonding film was observed in 4 or less chip mounting regions (die pads). That is, peeling of the die-bonding film was observed in 6 or more chip mounting regions (die pads).

[0438] Table 2 shows the evaluation results of the bonding state with respect to the lead frame.

[0439] In addition, the bonding state of the die-bonding film described in each example was evaluated in the same manner as above for a substrate in which the surface of the circuit substrate was subjected to a solder resist treatment with an epoxy resin (hereinafter referred to as an organic substrate).

[0440] <Connectivity for Bonding Wires>

[0441] A semiconductor chip having an electrode portion on one side (hereinafter referred to as a semiconductor chip with an electrode portion) is used instead of a silicon bare wafer. In addition, steps (1) to (3) described in the above "Bonding state relative to the lead frame" are repeated 10 times, and 10 chip mounting areas (chip pads) in the silver lead frame are respectively covered with the semiconductor chips with chip bonding films and electrode portions described in each example, thereby obtaining a lead frame to which the semiconductor chip with an electrode portion described in each example is attached.

[0442] Then, after each of the plurality of lead terminals of the lead frame is connected to each of the electrode portions of the ten semiconductor chips with electrodes using bonding wires, the connection states of the bonding wires with respect to the electrode portions of the ten semiconductor chips with electrodes are examined.

[0443] In addition, the connection by the bonding wire was performed by ultrasonic bonding after heating the lead frame at a temperature of 180°C.

[0444] Furthermore, the lead terminals are formed of an aluminum alloy, and the bonding wires are obtained by processing a gold alloy into thin wires (gold alloy thin wires).

[0445] In the lead frame to which the semiconductor chips with electrode portions described in each embodiment are attached, poor connection of the bonding leads with respect to the electrode portions of all 10 semiconductor chips with electrode portions is not confirmed. However, in the lead frame to which the semiconductor chips with electrode portions described in each comparison example are attached, poor connection of the bonding leads with respect to the electrode portions of all 10 semiconductor chips with electrode portions is confirmed.

[0446] From this result, it is considered that when the die bonding film having a storage elastic modulus of 200 MPa or more at 150° C. is used, poor connection of the bonding wire to the electrode portion of the semiconductor chip with the electrode portion can be sufficiently suppressed.

Claims

1. A die-bonding film comprising a thermosetting resin as an organic component, After thermal curing, the storage modulus at 150°C is above 200 MPa. The die bonding film, when bonded to a silver-plated copper lead frame, was exposed to an environment of a temperature of 85° C. and a relative humidity of 60% RH for 168 hours, had a shear adhesive strength of 3 MPa or more to the silver-plated copper lead frame at 260° C. 2 . The die-bonding film according to claim 1 , which has a melt viscosity at 120° C. of 100 Pa·s or more.

3. The die-bonding film according to claim 1 or 2, further comprising an acrylic polymer as the organic component, The ratio of the acrylic polymer to the total mass of the organic component is 15 mass % or more and 55 mass % or less.

4. The die-bonding film according to claim 3, wherein The acrylic polymer has an acid value of 0.1 mgKOH / g or more.

5. The die-bonding film according to claim 1 or 2, further comprising an inorganic filler as an inorganic component, The ratio of the inorganic filler to the total mass of the organic component and the inorganic component is 30 mass % or more and 60 mass % or less.

6. The die-bonding film according to claim 1 or 2, comprising an epoxy resin and a phenol resin as the thermosetting resin, The epoxy resin has an epoxy equivalent of less than 170 g / eq, The phenolic resin has a hydroxyl equivalent of 170 g / eq or less. 7 . The die-bonding film according to claim 1 , which has a glass transition temperature Tg of 140° C. or higher after thermal curing. 8 . The die-bonding film according to claim 1 , which is used for covering and bonding a semiconductor chip to a silver-plated copper lead frame.

9. A semiconductor device comprising: A lead frame having at least one chip mounting area for mounting a semiconductor chip; at least one die bonding film covering and bonding at least one of the chip mounting regions; and at least one semiconductor chip covered and bonded to at least one of the die-bonding films, wherein the die-bonding film is the die-bonding film according to claim 1 or 2, The lead frame is a silver-plated copper lead frame.

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