Colored photovoltaic filter film and preparation method thereof

Abstract

The invention relates to the field of filtering films, in particular to a color photovoltaic filtering film and a preparation method thereof.The color photovoltaic filtering film comprises a transparent substrate layer, a bottom electrode optical adjusting layer, a photovoltaic functional structure layer, a top electrode and a top electrode optical adjusting layer which are sequentially stacked from bottom to top; wherein the photovoltaic functional structure layer is formed by superposing four same periodic structure units, and each periodic structure unit comprises a metal thin film, a hole transmission thin film, a photosensitive thin film and an electron transmission thin film. The color photovoltaic filter film can realize selective transmission of light of different wave bands while generating power, and the method provides a new thought for development of color photovoltaic cells and filter films. The color photovoltaic filter film has wide application space in the fields of photovoltaic building integration, smart home, new energy automobiles, portable and wearable electronic equipment, aerospace and the like.

Description

Technical Field

[0001] The invention belongs to the technical field of filter films, and in particular relates to a color photovoltaic filter film and a preparation method thereof. Background Art

[0002] With the acceleration of global industrialization and population growth, the consumption of traditional fossil energy (such as coal, oil and natural gas) is increasing, leading to increasingly serious energy crises and environmental pollution problems. In order to solve these problems, people began to look for clean, renewable energy alternatives. As a clean and inexhaustible energy source, solar energy has huge development potential.

[0003] Photovoltaic technology is a technology that directly converts solar energy into electrical energy. It has developed rapidly in recent years. Photovoltaic cells are the core components of photovoltaic technology. Their conversion efficiency and cost directly affect the widespread application of photovoltaic technology. At present, the mainstream photovoltaic cells on the market mainly include monocrystalline silicon, polycrystalline silicon and amorphous silicon. However, these photovoltaic cells still have certain limitations in practical applications, such as low conversion efficiency and high cost.

[0004] Colored photovoltaic filter film is a new type of photovoltaic filter material. It can achieve selective absorption of the solar spectrum without reducing the conversion efficiency of photovoltaic cells. In addition, colored photovoltaic filter film also has good decorative properties. It can be designed with colors and patterns according to different needs to meet people's needs for beauty. The emergence of colored photovoltaic filter film has brought new developments in the application field of photovoltaic technology. In addition to the traditional photovoltaic power generation field, colored photovoltaic filter film can also be used in building integration, smart glass and other fields, bringing more convenience and comfort to people's lives. The research on colored photovoltaic filter film is of great significance to improving the conversion efficiency of photovoltaic cells, reducing costs and expanding the application field. Through the research on the materials, structure and preparation process of colored photovoltaic filter film, new ideas and methods can be provided for the development of photovoltaic technology and the sustainable development of the photovoltaic industry can be promoted.

[0005] With the continuous maturity of the new generation of photovoltaic technology and the deepening of the future information society, people's demand for photovoltaic products will no longer be limited to its functionality, and they will also pay more and more attention to the personalized design of products to meet their aesthetic needs. This provides a broad development space for color photovoltaic cells. It can not only meet personalized needs in the fields of portable electronic devices and wearable clothing, but also has the potential to form important applications in the fields of urban building beautification and smart home, such as curtain wall decoration of high-rise buildings, colored glass film for vehicles, etc. However, the structural design of color photovoltaic cells that can achieve wide color gamut and wide range of wavelength regulation is still a challenge, and the structure and color display mechanism that can achieve high-efficiency color photovoltaic devices need further development and exploration. Summary of the invention

[0006] In view of this, the present invention aims to provide a color photovoltaic filter film and a preparation method thereof, so as to solve the technical problem that existing color photovoltaic cells are difficult to achieve wide color gamut and large range wavelength control.

[0007] To achieve the above object, the technical solution created by the present invention is implemented as follows: A colored photovoltaic filter film comprises a transparent substrate layer, a bottom electrode optical adjustment layer, a photovoltaic functional structure layer, a top electrode and a top electrode optical adjustment layer stacked in sequence from bottom to top; wherein the photovoltaic functional structure layer is composed of four identical periodic structural units stacked together, and each periodic structural unit comprises a metal film, a hole transport film, a photosensitive film and an electron transport film.

[0008] Furthermore, the metal film is an Ag film, the hole transport film is a NiOx film, the photosensitive film is a perovskite film, and the electron transport film is a TPBi film.

[0009] Furthermore, the perovskite film is MAPbBr 3 film.

[0010] Furthermore, the thickness of the periodic structural unit is 53-205 nm.

[0011] Furthermore, the transparent substrate layer is glass, PET or PEN, and has a thickness of 0.3-1 mm.

[0012] Furthermore, the bottom electrode optical adjustment layer is TiO 2 Thin film, Ta 2 O 5 Thin film or WO 3 Thin film, thickness is 20-300nm.

[0013] Furthermore, the top electrode is a Ag thin film with a thickness of 10-30 nm.

[0014] Furthermore, the top electrode optical adjustment layer is LiF 2 Thin film, CaF 2 Thin film or AlF 3 Thin film, thickness is 20-300nm.

[0015] A method for preparing the above-mentioned colored photovoltaic filter film comprises the following steps: Step S1: preparing a bottom electrode optical adjustment layer on a transparent substrate; Step S2: preparing a photovoltaic functional structure layer on the bottom electrode optical adjustment layer; the photovoltaic functional structure layer is composed of four identical periodic structure units stacked together, and each periodic structure unit includes a metal film, a hole transport film, a photosensitive film and an electron transport film; Step S3: preparing a top electrode on the photovoltaic functional structure layer; Step S4: preparing a top electrode optical adjustment layer on the top electrode.

[0016] Furthermore, the specific process of step S1 includes: S101: clean a transparent substrate with a thickness of 0.3-1 mm and a strip mask plate and place them together in a vacuum coating device; S102: Evacuate the vacuum coating equipment. When the vacuum degree reaches 2×10 -3 -8×10 -4 Pa, 20-300nm thick TiO was thermally evaporated on a transparent substrate at an evaporation rate of 0.1-1nm / s. 2 、 2 O 5 or WO 3 forming a bottom electrode optical adjustment layer; The specific process of step S2 includes: S201: depositing 15 nm thick Ag on the bottom electrode optical adjustment layer at an evaporation rate of 0.1-1 nm / s to form a metal film, and depositing 10 nm thick NiOx on the metal film at an evaporation rate of 0.1-1 nm / s to form a hole transport film; S202: After the transparent substrate is cooled, the transparent substrate is taken out and placed on a spin coater bracket in the glove box; S203: evenly drop the perovskite solution on the surface of the hole transport film, adjust the speed of the spin coater to 1000-5000 r / min, and spin coat for 1 minute to obtain a photosensitive film with a thickness of 20-140 nm; S204: placing the transparent substrate with the photosensitive film formed thereon on a hot stage in a glove box, and heating the transparent substrate at 100° C. for 10 minutes; S205: After the transparent substrate is cooled, the transparent substrate is taken out from the vacuum coating device and placed in the vacuum coating device, and the vacuum coating device is evacuated. When the vacuum degree reaches 2×10 -3 -4×10 -4 Pa, TPBi with a thickness of 8-40 nm is thermally evaporated and deposited on the photosensitive film at an evaporation rate of 0.1-1 nm / s to form an electron transport film; Repeat steps S201 to S205 three times to obtain a photovoltaic functional structure layer; The specific process of step S3 includes: Thermally evaporating and depositing Ag with a thickness of 10-30 nm on the electron transport film at an evaporation rate of 0.1-1 nm / s to form a top electrode; The specific process of step S4 includes: Thermally evaporate 20-300nm thick LiF on the electron transport film at an evaporation rate of 0.1-1nm / s 2 , CaF 2 or AlF 3 A top electrode optical adjustment layer is formed.

[0017] Compared with the prior art, the invention can achieve the following beneficial effects: (1) The colored photovoltaic filter film provided by the present invention is a laminated structure, which has both photovoltaic and filtering functions, and achieves a colored filtering effect through the synergistic effect of the photovoltaic functional structure layer and the electrode; (2) The stacked photovoltaic cell realized by using four periodic structural units can obtain a higher open circuit voltage; (3) The transmittance of red, green, and blue light wavelengths can be adjusted by adjusting the refractive index and thickness of the multilayer film, thereby achieving effective filtering of light in specific wavelength bands; (4) The colored photovoltaic filter film provided by the present invention can be applied to photovoltaic building integration, smart filters, new energy vehicles, portable and wearable electronic devices, aerospace and other fields, and has a broad application space. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments and descriptions of the present invention are used to explain the present invention and do not constitute an improper limitation on the present invention. In the drawings: Figure 1 is a schematic structural diagram of a colored photovoltaic filter film according to an embodiment of the invention; Figure 2 is a schematic structural diagram of a periodic structural unit according to an embodiment of the present invention; Figure 3 Schematic diagram of transmission spectra corresponding to embodiments 1, 2 and 3 of the present invention; Figure 4 It is a schematic diagram of the color coordinate positions of the transmission spectrum corresponding to embodiments 1, 2, and 3 of the present invention.

[0019] Description of reference numerals: 1. Transparent substrate layer; 2. Bottom electrode optical adjustment layer; 3. Photovoltaic functional structure layer; 4. Top electrode; 5. Top electrode optical adjustment layer; 301. Metal film; 302. Hole transport film; 303. Photosensitive film; 304. Electron transport film. DETAILED DESCRIPTION

[0020] In order to make the purpose, technical solution and advantages of the invention more clear, the invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described here are only used to explain the invention and do not constitute a limitation of the invention.

[0021] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments may be combined with each other.

[0022] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. In addition, the terms "first", "second", etc. are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", etc. may explicitly or implicitly include one or more of the features. In the description of the present invention, unless otherwise specified, "multiple" means two or more.

[0023] In the description of the invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the invention can be understood according to specific circumstances.

[0024] The present invention will be described in detail below with reference to the drawings and in combination with embodiments.

[0025] like Figure 1 As shown, an embodiment of the invention provides a colored photovoltaic filter film, comprising a transparent substrate layer 1, a bottom electrode optical adjustment layer 2, a photovoltaic functional structure layer 3, a top electrode 4 and a top electrode optical adjustment layer 5 stacked in sequence from bottom to top.

[0026] The transparent substrate layer 1 is made of glass, PET or PEN, and has a thickness of 0.3-1 mm.

[0027] The bottom electrode optical adjustment layer 2 is TiO 2 Thin film, Ta 2 O5 Thin film or WO 3 Thin film, thickness is 20-300nm.

[0028] The photovoltaic functional structure layer 3 is composed of four identical periodic structural units stacked together, and the specific structure of the periodic structural unit is [metal film / hole transport film / photosensitive film / electron transport film], with a thickness of 53-205nm. Figure 2 As shown, the periodic structural unit is formed by stacking a metal film 301, a hole transport film 302, a photosensitive film 303 and an electron transport film 304 in sequence from bottom to top, wherein the metal film 301 is an Ag film, the hole transport film 302 is a NiOx film, and the photosensitive film 303 is a perovskite film (including but not limited to MAPbBr 3 film), the electron transport film 304 is a TPBi film.

[0029] The top electrode 4 is a Ag thin film with a thickness of 10-30 nm.

[0030] The top electrode optical adjustment layer 5 is LiF 2 Thin film, CaF 2 Thin film or AlF 3 Thin film, thickness is 20-300nm.

[0031] The present invention provides a method for preparing a colored photovoltaic filter film, comprising the following steps: Step S1: preparing a bottom electrode optical adjustment layer on a transparent substrate.

[0032] The specific process of step S1 includes: S101: Clean the transparent substrate with a thickness of 0.3-1 mm and the strip mask and put them into a vacuum coating device together.

[0033] S102: Evacuate the vacuum coating equipment. When the vacuum degree reaches 2×10 -3 -8×10 -4 Pa, 20-300nm thick TiO was thermally evaporated on a transparent substrate at an evaporation rate of 0.1-1nm / s. 2 、 2 O 5 or WO 3 A bottom electrode optical adjustment layer is formed.

[0034] Step S2: preparing a photovoltaic functional structure layer on the bottom electrode optical adjustment layer; the photovoltaic functional structure layer is composed of four identical periodic structure units stacked together, and each periodic structure unit includes a metal film, a hole transport film, a photosensitive film and an electron transport film.

[0035] The specific process of step S2 includes: S201: depositing 15 nm thick Ag on the bottom electrode optical adjustment layer at an evaporation rate of 0.1-1 nm / s to form a metal film, and depositing 10 nm thick NiOx on the metal film at an evaporation rate of 0.1-1 nm / s to form a hole transport film; S202: After the transparent substrate is cooled, the transparent substrate is taken out and placed on a spin coater bracket in the glove box; S203: evenly drop the perovskite solution on the surface of the hole transport film, adjust the speed of the spin coater to 1000-5000 r / min, and spin coat for 1 minute to obtain a photosensitive film with a thickness of 20-140 nm; S204: placing the transparent substrate with the photosensitive film formed thereon on a hot stage in a glove box, and heating the transparent substrate at 100° C. for 10 minutes; S205: After the transparent substrate is cooled, the transparent substrate is taken out from the vacuum coating device and placed in the vacuum coating device, and the vacuum coating device is evacuated. When the vacuum degree reaches 2×10 -3 -4×10 -4 Pa, TPBi with a thickness of 8-40 nm is thermally evaporated and deposited on the photosensitive film at an evaporation rate of 0.1-1 nm / s to form an electron transport film; Repeat step S201 to step S205 three times to obtain a photovoltaic functional structure layer.

[0036] Step S3: preparing a top electrode on the photovoltaic functional structure layer.

[0037] The specific process of step S2 includes: S201: depositing 15 nm thick Ag on the bottom electrode optical adjustment layer at an evaporation rate of 0.1-1 nm / s to form a metal film, and depositing 10 nm thick NiOx on the metal film at an evaporation rate of 0.1-1 nm / s to form a hole transport film; S202: After the transparent substrate is cooled, the transparent substrate is taken out and placed on a spin coater bracket in the glove box; S203: evenly drop the perovskite solution on the surface of the hole transport film, adjust the speed of the spin coater to 1000-5000 r / min, and spin coat for 1 minute to obtain a photosensitive film with a thickness of 20-140 nm; S204: placing the transparent substrate with the photosensitive film formed thereon on a hot stage in a glove box, and heating the transparent substrate at 100° C. for 10 minutes; S205: After the transparent substrate is cooled, the transparent substrate is taken out from the vacuum coating device and placed in the vacuum coating device, and the vacuum coating device is evacuated. When the vacuum degree reaches 2×10 -3 -4×10 -4Pa, TPBi with a thickness of 8-40 nm is thermally evaporated and deposited on the photosensitive film at an evaporation rate of 0.1-1 nm / s to form an electron transport film; Repeat step S201 to step S205 three times to obtain a photovoltaic functional structure layer.

[0038] Step S4: preparing a top electrode optical adjustment layer on the top electrode.

[0039] The specific process of step S4 includes: Thermally evaporate 20-300nm thick LiF on the electron transport film at an evaporation rate of 0.1-1nm / s 2 , CaF 2 or AlF 3 A top electrode optical adjustment layer is formed.

[0040] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0041] Comparative Example 1: 1) Place the cleaned 150nm thick ITO transparent electrode and 1mm thick glass substrate in the vacuum coating equipment and evacuate the vacuum coating equipment. When the vacuum degree reaches 2×10 -3 When Pa is reached, a 10 nm hole transport thin film NiOx is deposited by thermal evaporation at an evaporation rate of 0.1 nm / s.

[0042] 2) After the evaporation is completed and the transparent substrate is cooled, the transparent substrate is taken out of the vacuum coating equipment and transferred to the glove box, and placed on the spin coater bracket. The stirred perovskite solution is evenly dripped on the hole transport film NiOx, and the speed of the spin coater is adjusted to 3000r / min. After spin coating for 1 minute, a 102nm thick perovskite photosensitive film is obtained. The transparent substrate with the perovskite photosensitive film is placed on the hot stage in the glove box and heated at 100°C for 10 minutes.

[0043] The preparation method of the above perovskite solution is as follows: using dimethyl sulfoxide as solvent, MABr and PbBr 2 The molar ratio is 1:1 and the solution concentration is 40%.

[0044] 3) After the transparent substrate is cooled, take it out of the glove box and put it into the vacuum coating equipment. Evacuate the vacuum coating equipment. When the vacuum degree reaches 2×10 -3 When 2400 Å / s was used, a 30 nm thick electron transport film TPBi and a 100 nm thick metal Ag were evaporated in sequence.

[0045] Embodiment 1: 1) Place the cleaned 1mm thick glass substrate and the strip mask into the electron beam vacuum coating equipment and evacuate the vacuum coating equipment. When the vacuum degree reaches 2×10 -3 Pa, the evaporation rate is 0.1nm / s, and the 50nm thick bottom electrode optical adjustment layer TiO 2 , 15nm thick metal film Ag, 10nm thick hole transport film NiOx.

[0046] 2) After the evaporation is completed and the glass substrate is cooled, the glass substrate is taken out from the vacuum coating equipment and transferred to the spin coater bracket in the glove box. The stirred perovskite solution is evenly dripped on the glass substrate. The speed of the spin coater is adjusted to 3000r / min. After spin coating for 1 minute, a 102nm thick photosensitive film is obtained. The glass substrate with the photosensitive film is placed on the hot stage in the glove box and heated at 100°C for 10 minutes.

[0047] The preparation method of the above-mentioned perovskite photosensitive film solution is as follows: using dimethyl sulfoxide as solvent, MABr and PbBr 2 The molar ratio is 1:1 and the solution concentration is 40%.

[0048] 3) After the glass substrate has cooled down, take it out of the glove box and put it into the vacuum coating equipment. Evacuate the vacuum coating equipment. When the vacuum degree reaches 2×10 -3 At 1.5 Pa, a 30 nm electron transport thin film TPBi was deposited by thermal evaporation.

[0049] 4) Repeat the same process as above to prepare [15nm metal film Ag / 10nm hole transport film NiOx / 102nm MAPbBr 3 Photosensitive film / 30nm electron transport film TPBi] 3 times.

[0050] 5) Continue to evaporate 15nm thick top electrode Ag and 150nm thick top electrode optical adjustment layer LiF in the vacuum coating equipment.

[0051] Embodiment 2: 1) Place the cleaned 0.3 mm thick PEN substrate and the strip mask into the vacuum coating equipment and evacuate the vacuum coating equipment. When the vacuum degree reaches 1×10 -3 Pa, the 20nm thick bottom electrode optical adjustment layer Ta is evaporated in sequence at an evaporation rate of 0.5nm / s. 2 O 5 , 15nm thick metal film Ag, 10nm thick hole transport film NiOx.

[0052] 2) After the evaporation is completed and the PEN substrate is cooled, it is taken out and transferred to the spin coater bracket in the glove box. The stirred perovskite solution is evenly dropped on the PEN substrate. The speed of the spin coater is adjusted to 1000r / min. After spin coating for 1 minute, a 140nm thick photosensitive film is obtained. The PEN substrate with the photosensitive film is placed on the hot stage in the glove box and heated at 100°C for 10 minutes.

[0053] The preparation method of the above perovskite solution is as follows: using dimethyl sulfoxide as solvent, MABr and PbBr 2 The molar ratio is 1:1 and the solution concentration is 40%.

[0054] 3) After the PEN substrate is cooled, take it out of the glove box and put it into the vacuum coating equipment. Evacuate the vacuum coating equipment. When the vacuum degree reaches 1×10 -3 When TPBi is deposited at 40 nm thick, a 40 nm thick electron transport film is evaporated.

[0055] 4) Repeat the above process to prepare [15nm metal film Ag / 10nm hole transport film NiOx / 140nm MAPbBr 3 Photosensitive film / 40nm electron transport film TPBi] 3 times.

[0056] 5) Continue to evaporate 10nm thick top electrode Ag and 20nm thick top electrode optical adjustment layer CaF in the vacuum coating equipment 2 .

[0057] Embodiment 3: 1) Place the cleaned 0.5 mm thick PET substrate and the strip mask into the electron beam vacuum coating equipment and evacuate the vacuum coating equipment. When the vacuum degree reaches 8×10 -4 Pa, the 300nm thick bottom electrode optical adjustment layer WO was evaporated in sequence at an evaporation rate of 1nm / s. 3 , 15nm thick metal film Ag, 10nm thick hole transport film NiOx.

[0058] 2) After the evaporation is completed and the PET substrate is cooled, it is taken out of the vacuum coating equipment and transferred to the spin coater bracket in the glove box. The stirred perovskite solution is evenly dripped on the PET substrate. The speed of the spin coater is adjusted to 5000r / min. After spin coating for 1 minute, a 20nm thick photosensitive film is obtained. The PET substrate with the photosensitive film is placed on the hot stage in the glove box and heated at 100°C for 10 minutes.

[0059] The preparation method of the above perovskite solution is as follows: using dimethyl sulfoxide as solvent, MABr and PbBr 2 The molar ratio is 1:1 and the solution concentration is 40%.

[0060] 3) After the PET substrate is cooled, take it out of the glove box and put it into the vacuum coating equipment. Evacuate the vacuum coating equipment. When the vacuum degree reaches 8×10 -4 When TPBi is deposited at 8 nm thick, an electron transport film TPBi is evaporated.

[0061] 4) Repeat the above process to prepare [15nm metal film Ag / 10nm hole transport film NiOx / 20nm MAPbBr 3 Photosensitive film / 8nm electron transport film TPBi] 3 times.

[0062] 5) Continue to evaporate 30nm thick top electrode Ag and 300nm thick top electrode optical adjustment layer AlF in the vacuum coating equipment 3 .

[0063] Combination Figure 3 and Figure 4 By analyzing Examples 1, 2, 3 and Comparative Example 1, it can be concluded that: from Figure 3 and Figure 4 It can be seen that Examples 1, 2, and 3 can respectively achieve the transmission of light in the red, green, and blue light regions, and play an obvious filtering role for light in different bands. However, the photovoltaic device with a traditional structure (Comparative Example 1) is not light-transmissive and cannot achieve selective transmission of light. Figure 4 It can be seen that the colored photovoltaic filter film (points 2, 3, and 4) of the present invention can achieve selective transmission of the transmission spectrum in the red, green, and blue light regions (not limited to the above regions) by regulating the photovoltaic functional structure layer, indicating that the structure can play a good regulatory role in the transmission of light of different colors.

[0064] Table 1 Comparison of performance parameters of color photovoltaic filter films Open circuit voltage V Short circuit current density mA / cm 2 Fill Factor Energy conversion efficiency% Transmitted spectral color coordinates Comparative Example 1 0.60 8.55 0.65 3.33 - Example 1 2.01 5.37 0.58 6.26 （0.648,0.283） Example 2 2.14 3.51 0.61 4.58 （0.271,0.513） Example 3 1.96 4.58 0.55 4.94 （0.169,0.107） Table 1 shows the open circuit voltage, short circuit current density, fill factor, energy conversion efficiency and transmission spectrum color coordinates of Examples 1, 2, 3 and Comparative Example 1. As can be seen from Table 1, compared with Comparative Example 1, the photovoltaic performance of Examples 1, 2, and 3 is improved. This is mainly because the color photovoltaic filter film structure of the present invention is a laminated photovoltaic structure, so it has a superimposed open circuit voltage, but is limited by the transmission of part of the light and the different light absorption of each photosensitive layer, resulting in a significant decrease in the short circuit current density compared with Comparative Example 1. However, in any case, the overall device efficiency is still improved to a certain extent, which is also the advantage of the laminated photovoltaic device. However, compared with Comparative Example 1 which is not light-transmitting, the transmission spectrum color coordinates of Examples 1, 2, and 3 fall in the red, green, and blue light regions, respectively, indicating that the color photovoltaic filter film of the present invention has a good selective light transmission effect.

[0065] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the disclosure of the present invention can be performed in parallel, sequentially or in different orders, as long as the desired results of the technical solution disclosed in the present invention can be achieved, and this document does not limit this.

[0066] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A colored photovoltaic filter film, characterized in that: It includes a transparent substrate layer, a bottom electrode optical adjustment layer, a photovoltaic functional structure layer, a top electrode and a top electrode optical adjustment layer stacked in sequence from bottom to top; wherein the photovoltaic functional structure layer is composed of four identical periodic structural units stacked together, and each periodic structural unit includes a metal film, a hole transport film, a photosensitive film and an electron transport film.

2. The colored photovoltaic filter film according to claim 1, characterized in that: The metal film is an Ag film, the hole transport film is a NiOx film, the photosensitive film is a perovskite film, and the electron transport film is a TPBi film.

3. The colored photovoltaic filter film according to claim 2, characterized in that: The perovskite film is a MAPbBr3 film.

4. The colored photovoltaic filter film according to claim 3, characterized in that: The thickness of the periodic structural unit is 53-205 nm.

5. The colored photovoltaic filter film according to claim 1, characterized in that: The transparent substrate layer is glass, PET or PEN, and has a thickness of 0.3-1 mm.

6. The colored photovoltaic filter film according to claim 1, characterized in that: The bottom electrode optical adjustment layer is a TiO2 film, a Ta2O5 film or a WO3 film with a thickness of 20-300nm.

7. The colored photovoltaic filter film according to claim 1, characterized in that: The top electrode is a Ag thin film with a thickness of 10-30nm.

8. The colored photovoltaic filter film according to claim 1, characterized in that: The top electrode optical adjustment layer is a LiF2 film, a CaF2 film or an AlF3 film with a thickness of 20-300 nm.

9. A method for preparing a colored photovoltaic filter film, used for preparing the colored photovoltaic filter film according to any one of claims 1 to 8, characterized in that: The steps include: Step S1: preparing a bottom electrode optical adjustment layer on a transparent substrate; Step S2: preparing a photovoltaic functional structure layer on the bottom electrode optical adjustment layer; the photovoltaic functional structure layer is composed of four identical periodic structure units stacked together, and each periodic structure unit includes a metal film, a hole transport film, a photosensitive film and an electron transport film; Step S3: preparing a top electrode on the photovoltaic functional structure layer; Step S4: preparing a top electrode optical adjustment layer on the top electrode.

10. The method for preparing a colored photovoltaic filter film according to claim 9, characterized in that: The specific process of step S1 includes: S101: clean a transparent substrate with a thickness of 0.3-1 mm and a strip mask plate and place them together in a vacuum coating device; S102: Evacuate the vacuum coating equipment. When the vacuum degree reaches 2×10 -3 -8×10 -4 When the temperature is 2000 Pa, TiO2, Ta2O5 or WO3 with a thickness of 20-300 nm is thermally evaporated and deposited on a transparent substrate at an evaporation rate of 0.1-1 nm / s to form a bottom electrode optical adjustment layer; The specific process of step S2 includes: S201: depositing 15 nm thick Ag on the bottom electrode optical adjustment layer at an evaporation rate of 0.1-1 nm / s to form a metal film, and depositing 10 nm thick NiOx on the metal film at an evaporation rate of 0.1-1 nm / s to form a hole transport film; S202: After the transparent substrate is cooled, the transparent substrate is taken out and placed on a spin coater bracket in the glove box; S203: evenly drop the perovskite solution on the surface of the hole transport film, adjust the speed of the spin coater to 1000-5000 r / min, and spin coat for 1 minute to obtain a photosensitive film with a thickness of 20-140 nm; S204: placing the transparent substrate with the photosensitive film formed thereon on a hot stage in a glove box, and heating the transparent substrate at 100° C. for 10 minutes; S205: After the transparent substrate is cooled, the transparent substrate is taken out from the vacuum coating device and placed in the vacuum coating device, and the vacuum coating device is evacuated. When the vacuum degree reaches 2×10 -3 -4×10 -4 Pa, TPBi with a thickness of 8-40 nm is thermally evaporated and deposited on the photosensitive film at an evaporation rate of 0.1-1 nm / s to form an electron transport film; Repeat steps S201 to S205 three times to obtain a photovoltaic functional structure layer; The specific process of step S3 includes: Thermally evaporating and depositing Ag with a thickness of 10-30 nm on the electron transport film at an evaporation rate of 0.1-1 nm / s to form a top electrode; The specific process of step S4 includes: A 20-300 nm thick LiF2, CaF2 or AlF3 is thermally evaporated and deposited on the electron transport film at an evaporation rate of 0.1-1 nm / s to form a top electrode optical adjustment layer.

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