Intake system, process apparatus for semiconductor devices and process method

Abstract

The application discloses an air inlet system, a process equipment of a semiconductor device and a process method. The air inlet system comprises a first air mixing part, a second air mixing part and a controller. The first air mixing part is configured to introduce deposition gas or protective gas to the center of a wafer below a reaction cavity. The second air mixing part surrounds the first air mixing part and is configured to introduce protective gas or etching gas to the edge of the wafer. The controller is configured to control the first air mixing part to introduce deposition gas and the second air mixing part to introduce protective gas so that the protective gas is introduced circumferentially around the deposition gas, thereby limiting the deposition of the deposition gas to the center of the wafer to form a film. In response to the completion of the film deposition, the controller keeps the wafer position unchanged, controls the first air mixing part to introduce protective gas and the second air mixing part to introduce etching gas so that the etching gas is introduced circumferentially around the protective gas, thereby limiting the etching of the film to the edge of the wafer in situ. The application can avoid the common path pollution problem caused by the falling of the edge mask of the wafer during the wafer transfer process.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, and in particular to an air inlet system, a semiconductor device process equipment, a semiconductor device process method, and a computer readable storage medium. BACKGROUND

[0002] In the existing amorphous carbon mask technology, the hardness of the generated amorphous carbon mask is large. In the case of depositing a certain thickness of carbon mask, the film on the edge will fall off or the adhesion with the next layer of film will be affected due to the curved surface characteristics of the wafer edge and the hardness characteristics of the amorphous carbon mask.

[0003] There are two solutions to this problem at present. The first is to cover a positioning ceramic ring around the wafer during deposition to isolate a certain plasma field, thereby isolating the film deposition on the edge region. This method has certain disadvantages, that is, the volume space requirement of the deposition chamber is too large, and the ceramic ring needs to be positioned with the heating disc, which requires complex processing of the heating disc. The second is to first deposit the film in the deposition chamber, and then transfer the deposited wafer to the etching machine for etching the edge of the wafer. The disadvantage of this method is that two machines are needed to complete the above process, and if the film on the edge of the wafer has fallen off, it will cause contamination of the common path during the transfer process.

[0004] In order to solve the above problems existing in the prior art, there is an urgent need in the art for an improved air inlet technology that can realize in-situ deposition and edge etching of amorphous carbon mask, avoid the common path contamination problem caused by the carbon mask falling off on the edge of the wafer during the transfer process of etching, and also save process time. SUMMARY

[0005] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0006] In order to overcome the above-mentioned defects existing in the prior art, the present application provides an air inlet system, a semiconductor device process equipment, a semiconductor device process method, and a computer readable storage medium, which can realize in-situ deposition and edge etching of amorphous carbon mask, avoid the common path contamination problem caused by the carbon mask falling off on the edge of the wafer during the transfer process of etching, and also save process time.

[0007] Specifically, according to the first aspect of the present application, the above-mentioned gas inlet system comprises: a first gas mixing part located at the center of the reaction cavity, for introducing deposition gas or protective gas to the center of the wafer below the reaction cavity; a second gas mixing part surrounding the first gas mixing part, for introducing protective gas or etching gas to the edge of the wafer; and a controller configured to: control the first gas mixing part to introduce the deposition gas, and the second gas mixing part to introduce the protective gas, so that the protective gas is introduced circumferentially around the deposition gas, for limiting the deposition of the deposition gas to deposit a thin film in the center of the wafer; and in response to the completion of the deposition of the thin film, keep the wafer position unchanged, control the first gas mixing part to introduce the protective gas, and the second gas mixing part to introduce the etching gas, so that the etching gas is introduced circumferentially around the protective gas, for limiting the etching of the etching gas to etch a thin film at the edge of the wafer in situ.

[0008] Further, in some embodiments of the present application, the gas inlet system further comprises: a uniform gas baffle comprising a first baffle area and a second baffle area, wherein the first baffle area is located below the first gas mixing part, the second baffle area is located below the second gas mixing part, and is spaced apart from the first baffle area by a preset distance, wherein the preset distance is positively correlated with the etching range of the edge of the wafer.

[0009] Further, in some embodiments of the present application, the second gas mixing part is a combination of a plurality of gas channels, respectively comprising a first gas channel with a two-to-one circumferential direction, a second gas channel with a two-to-four circumferential direction, and a third gas channel with a four-to-eight circumferential direction, wherein the first gas channel communicates with the second gas channel via two output ports, the second gas channel communicates with the third gas channel via four output ports, and the third gas channel communicates with the second baffle area via eight output ports.

[0010] Further, in some embodiments of the present application, the gas inlet system further comprises: a shower plate comprising a first shower area and a second shower area, wherein the first shower area is located below the first baffle area, the second shower area is located below the second baffle area, and is spaced apart from the first shower area by the preset distance.

[0011] Further, the process equipment for semiconductor devices according to the second aspect of the present application is provided, which comprises a reaction cavity for placing a wafer inside to perform a process, and the gas inlet system according to the first aspect of the present application is arranged above the reaction cavity to make the protective gas and the deposition gas enter together in a circumferential manner, so as to limit the deposition of the deposition gas on the center of the wafer, and after the deposition film is completed, the wafer is kept in place, and the etching gas is made to enter together in a circumferential manner around the protective gas, so as to limit the etching of the etching gas on the edge of the wafer in situ.

[0012] Further, in some embodiments of the present application, the process equipment further comprises a liftable and adjustable heating disc arranged in the reaction cavity, which is used to adjust the distance between the heating disc and the gas inlet system to a first process distance when the deposition film process is performed in the reaction cavity, and adjust the distance between the heating disc and the gas inlet system to a second process distance when the edge etching process is performed in the reaction cavity, wherein the second process distance is smaller than the first process distance.

[0013] Further, the process method for semiconductor devices according to the third aspect of the present application is provided, which comprises the following steps: sending a wafer into the heating disc in the reaction cavity of the process equipment for semiconductor devices according to the second aspect of the present application; making the deposition gas enter through the first gas mixing part of the gas inlet system, and the protective gas enter through the second gas mixing part, so as to make the protective gas and the deposition gas enter together in a circumferential manner, so as to limit the deposition of the deposition gas on the center of the wafer; and in response to the completion of the deposition film, keeping the wafer in place, making the protective gas enter through the first gas mixing part, and the etching gas enter through the second gas mixing part, so as to make the etching gas enter together in a circumferential manner around the protective gas, so as to limit the etching of the etching gas on the edge of the wafer in situ.

[0014] Further, in some embodiments of the present application, the reaction cavity comprises a liftable and adjustable heating disc, and the step of making the deposition gas enter through the first gas mixing part of the gas inlet system, and the protective gas enter through the second gas mixing part, so as to make the protective gas and the deposition gas enter together in a circumferential manner, comprises the following steps: adjusting the distance between the heating disc and the gas inlet system to a first process distance; adjusting the radio frequency power source in the reaction cavity to a first high frequency power; and making the deposition gas and the protective gas around the deposition gas enter through the first gas mixing part and the second gas mixing part at the same time, so as to make the deposition gas deposit a film on the center of the wafer.

[0015] Furthermore, in some embodiments of the present invention, the step of introducing the protective gas through the first mixing section and the etching gas through the second mixing section includes: adjusting the distance between the heating plate and the air intake system to a second process spacing, wherein the second process spacing is smaller than the first process spacing; adjusting the radio frequency power supply in the reaction chamber to a second low-frequency power; and simultaneously introducing the protective gas and the etching gas surrounding the protective gas circumferentially through the first mixing section and the second mixing section, so that the etching gas can etch a thin film at the edge of the wafer in situ.

[0016] Furthermore, according to a fourth aspect of the present invention, a computer-readable storage medium is provided having computer instructions stored thereon. When the computer instructions are executed by a processor, a process method for implementing the semiconductor device described above according to the third aspect of the present invention is implemented. Attached Figure Description

[0017] The above-described features and advantages of the present invention will be better understood after reading the following detailed description of embodiments of the present disclosure in conjunction with the accompanying drawings. In the drawings, components are not necessarily drawn to scale, and components having similar related characteristics or features may have the same or similar reference numerals.

[0018] Figure 1 A schematic diagram of a process apparatus for a semiconductor device according to some embodiments of the present invention is shown;

[0019] Figure 2 A cross-sectional structural schematic diagram of an intake system provided according to some embodiments of the present invention is shown;

[0020] Figure 3 for Figure 2 A partial cross-sectional structural diagram of the intake system is shown.

[0021] Figure 4 A top view of an intake system provided according to some embodiments of the present invention is shown;

[0022] Figure 5 A flowchart illustrating a process method for a semiconductor device according to some embodiments of the present invention is shown;

[0023] Figure 6A A flowchart of a thin film deposition process method provided according to some embodiments of the present invention is shown;

[0024] Figure 6B for Figure 6A The diagram shows the airflow path on the wafer surface during the thin film deposition process.

[0025] Figure 7AA flow chart of a process method of edge etching is shown according to some embodiments of the present application; and

[0026] Figure 7B For Figure 7A A schematic diagram of airflow path of wafer surface in the process flow of edge etching is shown.

[0027] Reference signs:

[0028] 100 Process equipment of semiconductor device;

[0029] 110 Reaction cavity;

[0030] 120 Heating disc;

[0031] 121 Radio frequency electrode;

[0032] 130 Exhaust port;

[0033] 200 Intake system;

[0034] 210 First gas mixing part;

[0035] 220 Second gas mixing part;

[0036] 221 First gas channel;

[0037] 222 Second gas channel;

[0038] 223 Third gas channel;

[0039] 230 Gas uniformizing baffle;

[0040] 231 First baffle area;

[0041] 232 Second baffle area;

[0042] 240 Spray plate;

[0043] 241 First spray area;

[0044] 242 Second spray area;

[0045] 310 Gas uniformizing hole;

[0046] 320 Spray hole;

[0047] 330 Interval;

[0048] 410, 420, 430 Outlet;

[0049] 440 Intake port;

[0050] S510-S530 Steps;

[0051] S521-S523 Steps;

[0052] S531-S533 steps;

[0053] 600 wafer;

[0054] 610 central region; and

[0055] 620 edge region. DETAILED DESCRIPTION

[0056] The following detailed description is presented to enable any person skilled in the art to make and use the application. Various modifications to the embodiments described herein will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments without departing from the scope of the application. Thus, the present application is not intended to be limited to the embodiments described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein. In the description of the application, the following terms are defined as follows:

[0057] In the description of the present application, it is necessary to point out that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connection" should be understood in a broad sense, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through intermediate medium, can be internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0058] In addition, "upper", "lower", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. The relative terms are only used for the convenience of description, and do not mean that the device described should be manufactured or operated in a specific orientation, so it should not be understood as a limitation on the present application.

[0059] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be called the second component, region, layer and / or part without departing from some embodiments of the present application.

[0060] As mentioned above, in the wafer edge area, due to the curved surface characteristics of the wafer edge and the hardness characteristics of the amorphous carbon mask, in the case of depositing a certain thickness of carbon mask, the film on the edge will fall off or the adhesion with the next layer of film will be affected. There are two ways to solve this problem, the first is to cover a ceramic ring around the wafer during deposition to isolate the plasma field and thus isolate the film deposition in the edge area. This method has certain disadvantages, that is, the volume space requirement of the deposition chamber is too large, and the ceramic ring needs to be positioned with the heating plate, which requires complex processing of the heating plate. The second is to first deposit the film in the deposition chamber, and then transfer the deposited wafer to the etching machine for etching the wafer edge. The disadvantage of this method is that it needs to complete the above process through two machines, and if the film on the edge of the wafer has fallen off, it will cause contamination of the common path during the transfer process.

[0061] In order to solve the above problems in the prior art, the present application provides an air inlet system, a semiconductor device processing equipment, a semiconductor device processing method, and a computer readable storage medium, which can realize the deposition and edge etching process of the amorphous carbon mask in situ, avoid the problem of common path contamination caused by the falling off of the carbon mask on the edge of the wafer during the transfer process of etching, and save process time.

[0062] In some non-limiting embodiments, the above-mentioned air inlet system provided by the first aspect of the present application can be configured in the above-mentioned semiconductor device processing equipment provided by the second aspect of the present application and used to implement the above-mentioned semiconductor device processing method provided by the third aspect of the present application.

[0063] Specifically, in some non-limiting embodiments, the above-mentioned computer readable storage medium provided by the fourth aspect of the present application has computer instructions stored thereon. When the computer instructions are executed by a processor, they can be used to implement the above-mentioned semiconductor device processing method provided by the third aspect of the present application.

[0064] The working principle of the above-mentioned air inlet system will be described below in combination with some embodiments of semiconductor device processing equipment and semiconductor device processing methods. Those skilled in the art can understand that these embodiments of semiconductor device processing equipment and semiconductor device processing methods are only some non-limiting embodiments provided by the present application, which are intended to clearly demonstrate the main idea of the present application and provide some specific solutions for the public to implement, rather than to limit all working modes or all functions of the air inlet system. Similarly, the air inlet system is also only a non-limiting embodiment provided by the present application, which does not limit other configuration objects in the semiconductor device processing equipment and the implementation subject of each step in the semiconductor device processing method.

[0065] Referring to Figure 1 , Figure 1 A schematic diagram of a semiconductor processing apparatus is shown according to some embodiments of the present application.

[0066] As Figure 1 shown, in some embodiments of the present application, the semiconductor processing apparatus 100 can include a reaction chamber 110, inside which a heating plate 120 can be included, on which a wafer can be placed for processing. Above the reaction chamber 110, a gas inlet system 200 can be provided, for introducing various gases required for processing. Specifically, the gas inlet system 200 can introduce a protective gas circumferentially around a deposition gas, for limiting the deposition of the deposition gas in the center of the wafer. Furthermore, after the deposition of the film is completed, the wafer can be kept in place in the reaction chamber 110, and then an etching gas can be introduced circumferentially around the protective gas via the gas inlet system 200, for etching the film at the edge of the wafer in place. In embodiments of the present application, by means of the gas inlet system 200 in the reaction chamber 110, the process flow of depositing a film and edge etching can be realized in place in the reaction chamber 110, which is originally only used for deposition.

[0067] Further, in some optional embodiments, the semiconductor processing apparatus 100 can be specifically used for performing plasma enhanced chemical vapor deposition (PECVD), and by means of PECVD, an amorphous carbon mask can be deposited. In this regard, in the present embodiment, by means of the gas inlet system 200 in the reaction chamber 110, the process flow of depositing an amorphous carbon mask and edge etching can also be realized in place in the reaction chamber 110, which is originally only used for deposition.

[0068] Specifically, as Figure 1 shown, the heating plate 120 in the reaction chamber 110 and the gas inlet system 200 can be provided with a radio frequency electrode 121, which can be connected to an external radio frequency power source, for providing the radio frequency energy required for the deposition process and etching process of the amorphous carbon mask. On the sidewall of the reaction chamber 110, an exhaust port 130 can also be included, which can be connected to an external exhaust system, for exhausting the remaining reaction gas in the reaction chamber 110 after a specific process flow is completed, to clean the chamber.

[0069] Further, as Figure 1As shown, in some embodiments, the heating plate 120 is height-adjustable. When a thin film deposition process is performed in the reaction chamber 110, the distance between the heating plate 120 and the air intake system 200 can be adjusted to a first process spacing. When an edge etching process is performed in the reaction chamber 110, the distance between the heating plate 120 and the air intake system 200 can be adjusted to a second process spacing, wherein the second process spacing can be smaller than the first process spacing. Since the etching rate is faster, a smaller process spacing can reduce the etching time and enhance the etching effect on the edges. Therefore, in this embodiment, the second process spacing in the edge etching process is preferably smaller than the first process spacing in the thin film deposition process.

[0070] Next, please refer to Figure 2 , Figure 2 A cross-sectional structural schematic diagram of an intake system provided according to some embodiments of the present invention is shown.

[0071] like Figure 2 As shown, in some embodiments of the present invention, the intake system 200 may include a first mixing section 210, a second mixing section 220, and a controller (not shown in the drawings). Figure 1 It is understood that the first gas mixing section 210 can be located at the center above the reaction chamber 110, and is used to introduce deposition gas or protective gas to the wafer center below the reaction chamber 110. The second gas mixing section 220 can surround the first gas mixing section 210, and is used to introduce protective gas or etching gas circumferentially to the wafer edge. Therefore, the first gas mixing section 210 can include independently stored deposition gas and protective gas, and the second gas mixing section 220 can include independently stored etching gas and protective gas.

[0072] Since deposition and etching processes can be performed separately within the reaction chamber 110 of this invention, the first mixing section 210 and the second mixing section 220 can simultaneously introduce a deposition process gas group during the deposition process. The deposition process gas group can include a deposition gas and a protective gas. Optionally, the deposition gas can include propylene (C3H6), acetylene (C2H2), etc. The protective gas can include inert gases that are difficult to dissociate, such as nitrogen (N2). Furthermore, the deposition process gas group can also include a carrier gas for transporting the deposition gas, such as argon (Ar) or helium (He).

[0073] During the etching process, the first gas mixing section 210 and the second gas mixing section 220 can jointly introduce the etching process gas group, which can include etching gas and protective gas. Optionally, the etching gas can include oxygen (O2), hydrogen (H2), carbon dioxide (CO2), etc.

[0074] The controller can be configured to: control the first gas mixing portion 210 to input the deposition gas, and the second gas mixing portion 220 to input the protection gas, so that the protection gas is jointly inputted circumferentially around the deposition gas for limiting the deposition gas to deposit the thin film at the center of the wafer; and in response to completing the deposition of the thin film, keep the wafer position unchanged, control the first gas mixing portion 210 to input the protection gas, and the second gas mixing portion 220 to input the etching gas, so that the etching gas is jointly inputted circumferentially around the protection gas for etching the thin film at the edge of the wafer in situ.

[0075] Continuing as shown in Figure 2 , in some embodiments, the gas inlet system 200 can further include a gas uniformization baffle 230. The gas uniformization baffle 230 can include a first baffle area 231 and a second baffle area 232. The first baffle area 231 can be located below the first gas mixing portion 210, and the second baffle area 232 can be located below the second gas mixing portion 220.

[0076] Specifically, please understand together Figure 3 , Figure 3 For Figure 2 as shown in the partial cross-sectional structure schematic diagram of the gas inlet system. As shown in Figure 3 , the gas uniformization baffle 230 is distributed with a plurality of fine gas uniformization holes 310 for reducing the flow rate of the gas in the deposition process gas group or the etching process gas group delivered via the first gas mixing portion 210 and the second gas mixing portion 220, and facilitating the final uniform output of the gas in the deposition process gas group or the etching process gas group.

[0077] Further, as shown in Figure 2 and 3As shown, preferably, there is a preset distance interval 330 between the first baffle region 231 and the second baffle region 232. Since both the deposition and etching processes involve the simultaneous introduction of two different gases into the first mixing section 210 and the second mixing section 220 of the gas intake system 200, each gas has a different processing effect. Specifically, in the deposition process, the first mixing section 210 can introduce deposition gas into the central region of the reaction chamber 110 for thin film deposition, while the second mixing section 220 can introduce protective gas into the circumferential region of the reaction chamber 110 to limit the distribution range of the deposition gas and reduce thin film deposition on the wafer. In the etching process, the second mixing section 220 can introduce etching gas into the circumferential region of the reaction chamber 110 to etch the thin film at the wafer edge, while the first mixing section 210 can introduce protective gas into the central region of the reaction chamber 110 to limit the distribution range of the etching gas and prevent the thin film at the wafer center from being etched away. Therefore, regardless of which process flow is described above, the two gases introduced at the same time need to be mixed after entering the reaction chamber 110, rather than being mixed above the baffle of the traditional machine. If they are mixed before entering the gas equalization baffle 230, the effects of the two gases will be directly weakened, especially the effect of the protective gas on the range limitation of the other gas, or even eliminated.

[0078] Furthermore, in some embodiments, the preset distance L of the interval 330 between the first baffle region 231 and the second baffle region 232 can preferably be positively correlated with the edge etching range of the wafer. The position of the interval 330 can be set at the edge and can be adjusted according to the actual position, mainly depending on the edge removal range required by the process, but it can be located at the edge overall.

[0079] Continue as Figure 2 and Figure 3 As shown, in some embodiments, the air intake system 200 may further include a spray plate 240. The spray plate 240 may include a first spray area 241 and a second spray area 242, respectively corresponding to the first baffle area 231 and the second baffle area 232 located above it, and a spacing 330 of the same preset distance may also be provided between the second spray area 242 and the first spray area 241. Figure 3 As shown, the spray plate 240 can be distributed with multiple spray holes 320 whose diameter gradually increases from top to bottom, increasing the gas flow rate and enabling it to be sprayed downwards quickly. In this embodiment, the two gases that enter through the first mixing section 210 and the second mixing section 220 respectively can be isolated from each other in the interval 330 area between the gas equalization baffle 230 and the spray plate 240, thereby forming different flow fields after entering the reaction chamber 110.

[0080] Please refer to Figure 4 , Figure 4A top view structural schematic diagram of the gas inlet system according to some embodiments of the present application is shown.

[0081] As shown in the drawings, Figure 4 In some embodiments of the present application, the second gas mixing part 220 can be a combination of multiple gas channels. The second gas mixing part 220 can include a first gas channel 221 with a one-to-two circumferential direction, a second gas channel 222 with a two-to-four circumferential direction, and a third gas channel 223 with a four-to-eight circumferential direction. The first gas channel 221 communicates with the second gas channel 222 via two output ports 410, the second gas channel 222 can communicate with the third gas channel 223 via four output ports 420, and the third gas channel 223 can communicate with the second baffle area 232 below via eight output ports 430.

[0082] Preferably, the gas channel circumference of the second gas channel 222 can be greater than that of the first gas channel 221, and the gas channel circumference of the third gas channel 223 can be greater than that of the second gas channel 222, for uniform circumferential diffusion of the gas layer by layer, so that the gas in the second gas mixing part 220 achieves uniform circumferential distribution. If such a channel is not provided, the problem of uneven circumferential gas distribution will occur.

[0083] Specifically, as shown in the drawings, Figure 4 After the protective gas in the deposition process or the etching gas in the etching process enters the second gas mixing part 220 from the gas inlet port 440, it diffuses circumferentially along the first gas channel 221, and then is divided into two parts via the two output ports 410 at both ends of the first gas channel 221, and enters the second gas channel 222. Then, the gas continues to diffuse circumferentially along the second gas channel 222, and is divided into four parts via the four output ports 420 evenly distributed in the second gas channel 222, and enters the third gas channel 223. Then, the gas diffuses circumferentially along the third gas channel 223 and is divided into eight parts via the eight output ports 430 evenly distributed in the third gas channel 223, and enters the second baffle area 232.

[0084] Those skilled in the art can understand that the above-mentioned second gas mixing part 220 includes a combination of three circumferential gas channels, which is only one non-limiting embodiment provided by the present application, which is intended to clearly show the main concept of the present application and provide a specific scheme for the public to implement, rather than to limit the protection scope of the present application. In other embodiments, the number of circumferential gas channels in the second gas mixing part 220 can be increased or decreased according to the space inside the reaction chamber and the demand for uniform gas distribution.

[0085] So far, the main structure of the above-mentioned zoned independent gas inlet system 200 and the process equipment 100 of the semiconductor device including the above-mentioned zoned independent gas inlet system 200 have been introduced. Next, the working principle of the gas inlet system 200 configured in the process equipment 100 of the semiconductor device will be further described in combination with the process method of the semiconductor device.

[0086] Referring to Figure 5 , Figure 5 A flow chart of a process method of a semiconductor device is shown according to some embodiments of the present application.

[0087] As Figure 5 shown, in some embodiments of the present application, the process method of a semiconductor device can include the following steps. First, step S510 can be performed: a wafer is sent into a heating plate in a reaction cavity in a process equipment of a semiconductor device to prepare for process treatment.

[0088] Subsequently, step S520 can be performed: a deposition gas is introduced through a first gas mixing part in a gas inlet system, and a protective gas is introduced through a second gas mixing part, so that the protective gas is introduced together with the deposition gas circumferentially to limit the deposition of the deposition gas in the center of the wafer to deposit a thin film.

[0089] Specifically, it can be understood in combination with Figure 6A and 6B , Figure 6A A flow chart of a process method of thin film deposition is shown according to some embodiments of the present application, Figure 6B for Figure 6A the schematic diagram of the gas flow path of the wafer surface in the process flow of thin film deposition is shown.

[0090] As Figure 6A shown, in some embodiments of the present application, when the process flow of thin film deposition is performed in the reaction cavity 110, step S520 can be implemented as steps S521-S523.

[0091] In some optional embodiments, the process environment in the reaction cavity 110 can be adjusted first. First, step S521 can be performed: the distance between the heating plate and the gas inlet system is adjusted to a first process distance. Specifically, the height of the heating plate 120 in the reaction cavity 110 can be adjusted to adjust the distance between the heating plate 120 and the shower plate 240 to the first process distance. Preferably, the first process distance can range from 5 to 20 mm.

[0092] Then, step S522 can be performed: the radio frequency power source in the reaction cavity is adjusted to a first high frequency power. Since the radio frequency electrodes 121 can be provided in the heating plate 120 and the shower plate 240, by connecting an external radio frequency power source, the radio frequency energy required for the deposition process and the etching process of the amorphous carbon mask can be provided. Optionally, the first high frequency power can range from 500 to 6000 W. The high frequency power source can be used to generate plasma, so that the particles in the plasma can collide more times, so as to obtain high density particles, which is beneficial to deposit a dense thin film.

[0093] In addition, the temperature range in the reaction cavity 110 can be adjusted to 200-700°C, which is suitable for the deposition process. The pressure in the reaction cavity 110 can be adjusted to 1-20 torr.

[0094] Alternatively, since steps S521 and S522 both belong to the preparation steps before the thin film deposition process, the two steps can be interchanged.

[0095] Finally, step S523 can be performed: the deposition gas and the protective gas circumferentially surrounding the deposition gas are simultaneously introduced via the first gas mixing part and the second gas mixing part, so as to deposit the thin film in the center of the wafer.

[0096] Specifically, in combination with Figure 6B It is commonly understood that the controller can control the first gas mixing part 210 to introduce the deposition gas, such as C3H6, C2H2, and its carrier gas Ar, He, and control the second gas mixing part 220 to simultaneously introduce the inert gas with difficult dissociation as the protective gas, such as N2. Since the deposition gas has diffusivity, the inert gas circumferentially surrounds the deposition gas and is simultaneously introduced with the deposition gas, which can limit the diffusion range of the deposition gas, so that the deposition gas is distributed in the central region 610 of the wafer 600, while the inert gas covers the edge region 620 of the wafer 600, thereby reducing the distribution of the deposition gas to the edge of the wafer, and ultimately reducing the edge deposition of the wafer 600 to a certain extent.

[0097] Further, the flow rates of the two gases introduced by the first gas mixing part 210 and the second gas mixing part 220 can also be set according to the process result requirements. In some preferred embodiments, during the deposition process, the ratio of the inert gas and the deposition gas can be less than or equal to 1:1, and if the ratio is greater than this, it will affect the deposition in the central region 610 of the wafer 600.

[0098] Please continue to Figure 5 After completing the above deposition process flow, the wafer 600 is not transferred out, but is kept in place in the heating disc, and edge etching is performed thereon. First, step S530 can be performed: in response to completing the deposition of the thin film, the wafer position is kept unchanged, the protective gas is introduced via the first gas mixing part, and the etching gas is introduced via the second gas mixing part, so that the etching gas circumferentially surrounds the protective gas and is introduced together, for limiting the edge etching of the thin film on the wafer in place.

[0099] Specifically, in combination with Figure 7A and 7B It is commonly understood that Figure 7A a flowchart of the edge etching process method provided according to some embodiments of the present application is shown, Figure 7B for Figure 7AThe diagram shows the airflow path on the wafer surface during the edge etching process.

[0100] like Figure 7A As shown, in some embodiments of the present invention, when performing thin film deposition in the reaction chamber 110, step S530 can be specified as steps S531 to S533.

[0101] In some optional embodiments, the process environment within the reaction chamber 110 can be adjusted first. First, step S531 can be performed: adjusting the distance between the heating plate and the air intake system to a second process spacing. Specifically, the height of the heating plate 120 within the reaction chamber 110 can be adjusted to raise or lower the distance between the heating plate 120 and the spray plate 240 to a second process spacing, wherein the second process spacing is preferably smaller than the first process spacing. Since the etching rate is relatively fast, a smaller process spacing can reduce etching time and enhance the etching effect on the edges; therefore, the second process spacing range is preferably 3–10 mm.

[0102] Then, step S532 can be performed: adjusting the radio frequency power supply in the reaction chamber to the second low-frequency power. Optionally, the second low-frequency power range can be 100–1000 W. The low-frequency power supply can be used to apply a bias voltage, making it easier to give particles in the plasma higher velocity and kinetic energy, thus giving the particles stronger bombardment capabilities and improving the etching effect. Those skilled in the art will understand that the high frequency and low frequency in the first high-frequency power and the second low-frequency power in this invention are two relative concepts, not absolute high frequency and low frequency.

[0103] In addition, the temperature range within the reaction chamber 110 can be adjusted to 200–700°C, suitable for the deposition process. The pressure within the reaction chamber 110 can also be adjusted to 1–20 torr.

[0104] Optionally, since steps S531 and S532 are both preparatory steps before the edge etching process, the two steps can be interchanged.

[0105] Finally, step S533 can be performed: a protective gas and an etching gas surrounding the protective gas are simultaneously introduced through the first mixing section and the second mixing section, so that the etching gas can etch a thin film at the edge of the wafer in situ.

[0106] Specifically, combined Figure 7BIt is understood that the controller can control the first mixing section 210 to pass in the inert gas with difficult dissociation as the protective gas, such as N2, and control the second mixing section 220 to pass in the etching gas, such as O2, H2, CO2. Since the etching gas has diffusivity, the etching gas is circumferentially surrounded by the inert gas, and the inert gas is passed in together with the etching gas, so as to limit the diffusion range of the etching gas, so that the etching gas is distributed in the edge region 620 of the wafer 600, while the central region 610 of the wafer 600 is covered with the inert gas, thereby reducing the distribution of the etching gas to the center of the wafer, and finally completing the edge etching of the wafer 600, and avoiding the thin film in the central region 610 from being etched by mistake.

[0107] Further, the flow rates of the two gases passed in by the first mixing section 210 and the second mixing section 220 can also be set according to the process result requirements. In some preferred embodiments, during the etching process, the ratio of the inert gas and the etching gas can be greater than or equal to 1:1, and if less than this ratio, the central deposition area of the wafer 600 will be etched.

[0108] In the present embodiment, since the above step S520 only protects the edge region 620 of the wafer 600 with the inert gas, but the edge region 620 can still deposit a certain thin film, therefore, the step S530 of etching the thin film of the edge is still needed to be performed, and the etching gas can be selected to be the gas that only has etching effect on the deposited thin film, so as to avoid affecting the final product.

[0109] In addition, in the subsequent effect verification process, the result simulation diagram of the wafer surface during the thin film deposition process when the deposition gas C3H6 is flowed into the first mixing section 210 and the inert gas Ar is flowed into the second mixing section 220, it can also be obtained that at the position of 1mm on the wafer, the mass fraction of the inert gas Ar is distributed higher in the edge region of the wafer, and the mass fraction of C3H6 is distributed higher in the central region of the wafer, so as to meet the expectation. Further, through the stress cloud map, the velocity cloud map, the velocity vector diagram at the position of 1mm on the wafer, and the velocity trace diagram of the wafer cross section, it can be confirmed that during the thin film deposition process, the gas flow distribution in the reaction chamber is relatively uniform, which meets the conventional distribution of the PECVD reaction chamber.

[0110] In other optional embodiments, in the process of the subsequent effect verification, the simulation diagram of the wafer surface in the edge etching process when the inert gas N2 flows into the first mixing chamber 210 and the etching gas O2 flows into the second mixing chamber 220, the mass fraction of the etching gas O2 is higher in the edge area of the wafer, and the mass fraction of the inert gas N2 is higher in the center area of the wafer at the 1mm position on the wafer, so it is in line with the expectation. Further, through the stress cloud map, the velocity cloud map, the velocity vector diagram, and the velocity trace diagram of the wafer section at the 1mm position on the wafer, it can be confirmed that the airflow distribution in the reaction cavity in the edge etching process is also more uniform, which meets the conventional distribution of the PECVD reaction cavity.

[0111] Further, the above-mentioned gas inlet system 200, the semiconductor device processing equipment 100 and the semiconductor device processing method provided by the present application can also be applied to other thin film processes requiring edge etching in addition to amorphous carbon masks, only the types, flow rates and process conditions of the etching gas and other process parameters need to be adjusted.

[0112] Although the above-described methods are illustrated and described as a series of acts, it will be appreciated and understood by those skilled in the art that the methods are not limited by the order of acts, as some acts can, in accordance with one or more embodiments, occur simultaneously or in different order than shown and described herein, or can occur with other acts not shown or described herein.

[0113] Those skilled in the art will further appreciate that steps of the methods or algorithms described herein can be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. A software module can reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. An exemplary storage medium is coupled to the processor such that the processor can read information from, and write information to, the storage medium. In the alternative, the storage medium can be integral to the processor. The processor and the storage medium can reside in an ASIC. The ASIC can reside in a user terminal. In the alternative, the processor and the storage medium can reside as discrete components in a user terminal.

[0114] In one or more exemplary embodiments, the functions described can be implemented in hardware, software, firmware, or any combination thereof. If implemented in software as a computer program product, the functions can be stored on or transmitted over as one or more instructions or code on a computer-readable medium. Computer-readable media includes both computer storage media and communication media including any medium that facilitates transfer of a computer program from one place to another. A storage media can be any available media that can be accessed by a computer. By way of example, and not limitation, such computer-readable media can comprise RAM, ROM, EEPROM, CD-ROM or other optical disk storage, magnetic disk storage or other magnetic storage devices, or any other medium that can be used to carry or store desired program code in the form of instructions or data structures and that can be accessed by a computer. Also, any connection is properly termed a computer-readable medium. For example, if the software is transmitted from a website, server, or other remote source using a coaxial cable, fiber optic cable, twisted pair, digital subscriber line (DSL), or wireless technologies such as infrared, radio, and microwave, then the coaxial cable, fiber optic cable, twisted pair, DSL, or wireless technologies such as infrared, radio, and microwave are included in the definition of medium. Disk and disc, as used herein, includes compact disc (CD), laser disc, optical disc, digital versatile disc (DVD), floppy disk and blu-ray disc where disks usually reproduce data magnetically, while discs reproduce data optically with lasers. Combinations of the above should also be included within the scope of computer-readable media.

[0115] In summary, the present application provides an air intake system, a process equipment of a semiconductor device, a process method of a semiconductor device, and a computer readable storage medium, which can realize deposition and edge etching process of amorphous carbon mask in situ, avoid common path pollution caused by carbon mask falling off from the edge of wafer during the process of transferring wafer in etching, and save process time.

[0116] The foregoing description of the present disclosure has been directed to enable any person skilled in the art to make or use the disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An intake system, characterized in that, include: The first gas mixing section is located at the center above the reaction chamber and is used to introduce deposition gas or protective gas to the wafer center below the reaction chamber. The second gas mixing section surrounds the first gas mixing section and is used to circumferentially introduce protective gas or etching gas into the edge of the wafer. A gas mixing baffle includes a first baffle area and a second baffle area, wherein the first baffle area is located below the first gas mixing section, and the second baffle area is located below the second gas mixing section, and is spaced apart from the first baffle area by a preset distance, wherein the preset distance is positively correlated with the edge etching range of the wafer; and The controller is configured to: control the first gas mixing section to introduce the deposition gas and the second gas mixing section to introduce the protective gas, such that the protective gas is circumferentially introduced around the deposition gas to restrict the deposition gas from depositing a thin film at the center of the wafer; and in response to completing the deposition of the thin film, while keeping the wafer position unchanged, control the first gas mixing section to introduce the protective gas and the second gas mixing section to introduce the etching gas, such that the etching gas is circumferentially introduced around the protective gas to restrict the etching gas from etching a thin film at the edge of the wafer in situ.

2. The intake system as described in claim 1, characterized in that, The second mixing section is a combination of multiple air passages, including a first air passage divided into two circumferential directions, a second air passage divided into two circumferential directions, and a third air passage divided into four circumferential directions. The first air passage is connected to the second air passage through two output ports, the second air passage is connected to the third air passage through four output ports, and the third air passage is connected to the second baffle area through eight output ports.

3. The intake system as described in claim 1, characterized in that, Also includes: The spray plate includes a first spray area and a second spray area, wherein the first spray area is located below the first baffle area, the second spray area is located below the second baffle area, and there is a predetermined distance between them.

4. A semiconductor device manufacturing process apparatus, characterized in that, include: The reaction chamber contains the wafer for processing. as well as The air intake system as described in any one of claims 1 to 3 is disposed above the reaction chamber so that a protective gas is circumferentially introduced around the deposition gas to restrict the deposition gas from depositing a thin film at the center of the wafer, and after the deposition film is completed, the wafer position is kept unchanged, and an etching gas is circumferentially introduced around the protective gas to restrict the etching gas from etching a thin film at the edge of the wafer in situ.

5. The process equipment as described in claim 4, characterized in that, Also includes: An adjustable heating plate is disposed in the reaction chamber. When a thin film deposition process is performed in the reaction chamber, the distance between the heating plate and the air intake system is adjusted to a first process spacing. When an edge etching process is performed in the reaction chamber, the distance between the heating plate and the air intake system is adjusted to a second process spacing, wherein the second process spacing is smaller than the first process spacing.

6. A process method for a semiconductor device, characterized in that, Includes the following steps: The wafer is fed onto a heating plate within the reaction chamber of the semiconductor device processing equipment as described in any one of claims 4 to 5; Deposition gas is introduced through a first mixing section of the intake system, and a protective gas is introduced through a second mixing section, so that the protective gas is circumferentially introduced around the deposition gas to confine the deposition gas to deposit a thin film at the center of the wafer; and In response to the completion of the deposited thin film, while keeping the wafer position unchanged, the protective gas is introduced through the first gas mixing section and the etching gas is introduced through the second gas mixing section, so that the etching gas is introduced circumferentially around the protective gas, thereby restricting the etching gas from etching the thin film at the edge of the wafer in situ.

7. The process method as described in claim 6, characterized in that, The reaction chamber includes a height-adjustable heating plate. The step of introducing deposition gas through a first mixing section and a protective gas through a second mixing section of the air intake system, so that the protective gas is introduced circumferentially around the deposition gas, includes: Adjust the distance between the heating plate and the air intake system to the first process spacing; Adjust the radio frequency power supply within the reaction cavity to a first high-frequency power; and The deposition gas and a protective gas surrounding the deposition gas are simultaneously introduced through the first gas mixing section and the second gas mixing section, so that the deposition gas deposits a thin film at the center of the wafer.

8. The process method as described in claim 7, characterized in that, The step of introducing the protective gas through the first gas mixing section and the etching gas through the second gas mixing section includes: The distance between the heating plate and the air intake system is adjusted to a second process spacing, wherein the second process spacing is smaller than the first process spacing; Adjust the radio frequency power supply in the reaction cavity to a second low-frequency power; and The protective gas and the etching gas surrounding the protective gas are simultaneously introduced through the first gas mixing section and the second gas mixing section, so that the etching gas can etch a thin film at the edge of the wafer in situ.

9. A computer-readable storage medium storing computer instructions thereon, characterized in that, When the computer instructions are executed by the processor, the process method of the semiconductor device as described in any one of claims 6 to 8 is implemented.

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