An epitaxial growth method for ultrawide bandgap lithium gallium oxide epitaxial films

Abstract

This application discloses an epitaxial growth method for ultrawide bandgap lithium gallium oxide (LiGa5O8) epitaxial films, relating to the field of semiconductor process technology. The method involves introducing an oxygen precursor into the reaction chamber of an MOCVD equipment at a first temperature within a first temperature range and a first pressure within a first pressure range, performing a surface pretreatment on the substrate material placed in the reaction chamber for a predetermined duration. The temperature of the reaction chamber is then adjusted to a second temperature within a second temperature range while maintaining the first pressure. Based on a predetermined molar flow rate ratio, lithium, gallium, and oxygen precursors are simultaneously introduced into the reaction chamber for chemical vapor deposition, growing a p-type lithium gallium oxide (LiGa5O8) epitaxial film on the substrate material surface. This application can grow ultrawide bandgap lithium gallium oxide (LiGa5O8) epitaxial films with stable quality and good electrical conductivity on a predetermined substrate material surface.

Description

Technical Field

[0001] This application relates to the field of semiconductor process technology, and more specifically, to an epitaxial growth method for ultrawide bandgap lithium gallium oxide epitaxial films. Background Technology

[0002] Ultra-wide bandgap oxide semiconductor materials combine conductivity and optical transparency, making them widely used as key materials in optoelectronic devices. Gallium oxide, such as Ga2O3, is a typical example. With the research on ultra-wide bandgap gallium oxide semiconductor materials, a novel p-type ultra-wide bandgap oxide semiconductor material, lithium gallium octoxide (LiGa5O8) (referred to as lithium gallium oxide), has emerged. As a stable p-type ultra-wide bandgap oxide epitaxial growth material, LiGa5O8 has been preliminarily epitaxially grown by researchers using the Mist Chemical Vapor Deposition (MistCVD) process. However, since MistCVD involves atomizing a metal precursor and then transporting it to the reaction chamber using a carrier gas, where it reacts with oxygen on the substrate surface to generate the desired epitaxial material, this process typically requires the metal precursor to be dissolved in an acidic solution. This can easily lead to acid corrosion of the reaction chamber equipment. Furthermore, the atomized metal precursor's input into the reaction chamber makes precise control of its quantity difficult. Additionally, the atomized metal precursor is prone to condensation and liquefaction during transport to the reaction chamber, significantly impacting the quality of LiGa5O8 epitaxial growth. Therefore, an improved epitaxial growth method for LiGa5O8 is urgently needed to address these technical problems. Summary of the Invention

[0003] In view of this, this application proposes an epitaxial growth method for ultrawide bandgap lithium gallium oxide epitaxial films to obtain high-quality p-type lithium gallium oxide (LiGa5O8) epitaxial films based on metal-organic chemical vapor deposition (MOCVD).

[0004] This application proposes a method for epitaxial growth of ultrawide bandgap lithium gallium oxide epitaxial films, comprising the following steps:

[0005] When the reaction chamber of the MOCVD equipment is at a first temperature in a first temperature range and a first pressure in a first pressure range, an oxygen precursor is introduced into the reaction chamber to perform a surface pretreatment on the substrate material placed in the reaction chamber for a predetermined duration.

[0006] The temperature of the reaction chamber is adjusted to a second temperature within the second temperature range and the first pressure is maintained. Based on a predetermined molar flow rate ratio, lithium precursor, gallium precursor and oxygen precursor are simultaneously introduced into the reaction chamber for chemical vapor deposition to grow a P-type lithium gallium oxide (LiGa5O8) epitaxial film on the substrate material surface.

[0007] In some embodiments, the substrate material includes any one of sapphire, lithium gallium oxide, silicon, silicon carbide, gallium oxide, zinc oxide, lithium tantalate, and lithium niobate.

[0008] In some embodiments, the lithium precursor includes any one of lithium 2,2,6,6-tetramethyl-3,5-heptadecyl, lithium alkoxy, lithium alkyl, and lithium amino; the gallium precursor includes any one of alkyl gallium and gallium alkoxy; and the oxygen precursor includes any one of oxygen, ozone, and nitrous oxide.

[0009] In some embodiments, the first temperature range includes 400-800°C, and the second temperature range includes 800-1200°C.

[0010] In some embodiments, the second temperature range includes 800-1000°C.

[0011] In some implementations, the first pressure range includes 20-100 mbar.

[0012] In some implementations, the first pressure range includes 20-50 mbar.

[0013] In some embodiments, the molar flow ratio of the lithium precursor to the gallium precursor is in the range of 1:5 to 3:5.

[0014] In some embodiments, the molar flow ratio of the lithium precursor to the oxygen precursor is in the range of 1:100 to 1:6000, or the molar flow ratio of the gallium precursor to the oxygen precursor is in the range of 1:100 to 1:4000.

[0015] In some implementations, the predetermined duration includes 5-60 minutes.

[0016] This application can achieve at least the following beneficial effects:

[0017] The epitaxial growth method for ultrawide bandgap lithium gallium oxide (LiGa5O8) epitaxial films disclosed in this application utilizes a metal-organic chemical vapor deposition (MOCVD) process. Under predetermined temperature and pressure parameters, lithium, gallium, and oxygen precursors are simultaneously introduced into the reaction chamber at a predetermined molar flow rate ratio to perform chemical vapor deposition, thereby growing a LiGa5O8 epitaxial film on the substrate surface. Experiments show that under the above process parameters, a stable, high-conductivity, ultrawide bandgap p-type LiGa5O8 epitaxial film can be grown on the predetermined substrate surface. Attached Figure Description

[0018] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments of this application will be briefly described below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as limiting the scope of this application.

[0019] Figure 1 This is a schematic flowchart of the epitaxial growth method for ultrawide bandgap lithium gallium oxide epitaxial films of this application;

[0020] Figure 2 A schematic diagram of the structure of an exemplary MOCVD equipment reaction chamber is shown.

[0021] Figure 3 This is a schematic flowchart of the epitaxial growth method of ultrawide bandgap lithium gallium oxide epitaxial film according to the first embodiment of this application;

[0022] Figure 4 This is a schematic flowchart of the epitaxial growth method of ultrawide bandgap lithium gallium oxide epitaxial film according to the second embodiment of this application;

[0023] Figure 5 This is a schematic flowchart of the epitaxial growth method of ultrawide bandgap lithium gallium oxide epitaxial film according to the third embodiment of this application;

[0024] Figure 6 This is an image obtained by scanning electron microscopy (SEM) observation of the grown lithium gallium oxide (LiGa5O8) epitaxial film;

[0025] Figure 7 This is the X-ray diffraction (XRD) result spectrum of the grown lithium gallium oxide (LiGa5O8) epitaxial film. Detailed Implementation

[0026] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. However, it should be understood that the described embodiments are merely some exemplary embodiments of this application, and not all embodiments. Therefore, the following detailed description of the embodiments of this application is not intended to limit the scope of the claimed application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0027] It should be noted that the terms "first," "second," etc., in the specification and claims of this application are only used to distinguish and describe similar objects, and are not used to describe a specific order or sequence, nor should they be construed as indicating or implying relative importance.

[0028] As mentioned earlier, for the novel p-type ultrawide bandgap oxide semiconductor material lithium gallium oxide (LiGa5O8), the industry has initially achieved epitaxial growth of LiGa5O8 using the mist chemical vapor deposition (mistCVD) process. However, since the mistCVD process involves atomizing the metal precursor and then transporting it to the reaction chamber with a carrier gas, where it reacts with oxygen on the substrate surface to generate the required epitaxial material, this process generally requires the metal precursor to be dissolved in an acidic solution. This can easily lead to acid corrosion of the reaction chamber equipment. Furthermore, the method of feeding the metal precursor into the reaction chamber after atomization makes it difficult to precisely control the amount of metal precursor used. Additionally, the atomized metal precursor is prone to condensation and liquefaction during transport to the reaction chamber, significantly affecting the quality of the LiGa5O8 epitaxial growth.

[0029] Metal-organic chemical vapor deposition (MOCVD) is a chemical vapor deposition method based on the thermal decomposition chemical reaction of metal-organic precursors and reactive gases in a reaction chamber to grow single-crystal or polycrystalline thin films. MOCVD has been applied to the epitaxial growth of wide-bandgap gallium oxide semiconductor materials, such as gallium oxide (Ga₂O₃), but its application to the epitaxial growth of novel p-type ultrawide-bandgap oxide semiconductor materials, such as lithium gallium oxide (LiGa₅O₈), has not yet been found. Therefore, this application proposes an epitaxial growth method for ultrawide-bandgap lithium gallium oxide epitaxial films to obtain high-quality p-type lithium gallium oxide (LiGa₅O₈) epitaxial films based on MOCVD.

[0030] Figure 1 This is a schematic flowchart of the epitaxial growth method for the ultra-wide bandgap lithium gallium oxide epitaxial film of this application. Figure 1 As shown, the epitaxial growth method of the ultrawide bandgap lithium gallium oxide epitaxial film of this application includes the following steps:

[0031] Step S1: When the reaction chamber of the MOCVD equipment is at a first temperature in a first temperature range and a first pressure in a first pressure range, oxygen precursor is introduced into the reaction chamber to perform surface pretreatment on the substrate material placed in the reaction chamber for a predetermined duration.

[0032] Step S2: Adjust the temperature of the reaction chamber to a second temperature within the second temperature range and maintain the first pressure. Simultaneously input lithium precursor, gallium precursor and oxygen precursor into the reaction chamber based on a predetermined molar flow rate ratio for chemical vapor deposition to grow a lithium gallium oxide (LiGa5O8) epitaxial film on the substrate material surface.

[0033] In this embodiment, an MOCVD device is used to grow a lithium gallium oxide (LiGa5O8) epitaxial film. Figure 2A schematic diagram of the structure of an exemplary MOCVD apparatus reaction chamber 100 is shown. (As shown...) Figure 2 As shown, the MOCVD equipment reaction chamber 100 includes three precursor delivery channels: a lithium precursor delivery channel 101, a gallium precursor delivery channel 102, and an oxygen precursor delivery channel 103. The lithium precursor delivery channel 101, gallium precursor delivery channel 102, and oxygen precursor delivery channel 103 are controlled by flow controllers (MFCs) 107, 108, and 109, respectively, to regulate the molar flow rates of the lithium, gallium, and oxygen precursors entering the reaction chamber. It also includes a rotatable substrate tray 104 for placing substrate material 105, and an exhaust gas outlet channel 106 for discharging waste gas from the chemical vapor deposition process. In addition, the MOCVD equipment reaction chamber 100 includes a supporting temperature control system and a pressure control system. Figure 2 (Not shown in the image), used to control the reaction chamber 100 at a predetermined operating temperature and pressure.

[0034] First, the reaction chamber 100 of the MOCVD equipment is adjusted to a first temperature within a first temperature range and a first pressure within a first pressure range. Oxygen precursor is input into the reaction chamber 100 through the oxygen precursor delivery channel 103. The substrate material 105 placed on the substrate tray 104 of the reaction chamber 100 is subjected to surface pretreatment for a predetermined duration to remove impurities, contaminants and oxides from the surface of the substrate material 105.

[0035] Next, the temperature of the reaction chamber 100 is adjusted to a second temperature within the second temperature range, and the first pressure is maintained. Under the conditions of a predetermined high temperature and constant low pressure in the reaction chamber 100, lithium precursor, gallium precursor, and oxygen precursor are simultaneously input into the reaction chamber 100 through the lithium precursor delivery channel 101, gallium precursor delivery channel 102, and oxygen precursor delivery channel 103, and the flow controllers (MFCs) 107, 108, and 109 are controlled to perform chemical vapor deposition based on a predetermined molar flow ratio, thereby growing a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the substrate material 105 placed on the rotatable substrate tray 104. Simultaneously, the waste gas generated during the chemical vapor deposition process of the lithium gallium oxide (LiGa5O8) epitaxial film is discharged through the exhaust gas discharge channel 106.

[0036] In one embodiment, the substrate material includes any one of sapphire, lithium gallium oxide, silicon, silicon carbide, gallium oxide, zinc oxide, lithium tantalate, and lithium niobate. In one embodiment, the substrate material is preferably sapphire or lithium gallium oxide.

[0037] In one embodiment, the lithium precursor includes any one of lithium 2,2,6,6-tetramethyl-3,5-heptadecylene, lithium alkoxy (RO-Li, such as lithium methoxy, lithium ethoxy, lithium tert-butoxide), lithium alkyl (R-Li, such as lithium n-butyllithium, lithium methyl, lithium tert-butyllithium), and lithium amino (R1, R2-N-Li, such as lithium diisopropylamino).

[0038] In one embodiment, the gallium precursor includes any one of alkyl gallium (R1, R2, R3-Ga) and alkoxy gallium (R1, R2, R3-O-Ga).

[0039] In one embodiment, the oxygen precursor includes any one of oxygen, ozone, and nitrous oxide.

[0040] In one embodiment, the first temperature range includes 400-800°C, and the second temperature range includes 800-1200°C.

[0041] In one embodiment, preferably, the second temperature range includes 800-1000°C. When the reaction chamber 100 is within this temperature range, the lithium precursor, gallium precursor, and oxygen precursor can undergo a good thermal decomposition chemical reaction based on a predetermined molar flow ratio, resulting in higher single-crystal growth characteristics and density features of the lithium gallium oxide (LiGa5O8) epitaxial film grown on the substrate material 105, thus ensuring the growth quality of the lithium gallium oxide (LiGa5O8) epitaxial film. When the reaction chamber 100 is significantly lower than this second temperature range, it will affect the single-crystal characteristics of the lithium gallium oxide (LiGa5O8) epitaxial growth, resulting in the grown epitaxial material not being a single-crystal material.

[0042] In one embodiment, the first pressure range includes 20-100 mbar. In another embodiment, preferably, the first pressure range includes 20-50 mbar. In this embodiment, the chemical vapor deposition of lithium gallium oxide (LiGa5O8) epitaxial film requires maintaining a constant low pressure condition in the reaction chamber 100. Under this constant low pressure condition, a stable chemical reaction between the lithium precursor, gallium precursor, and oxygen precursor can be guaranteed. This is because when the reaction chamber 100 is in an excessively high pressure range, it will affect the mobility of the lithium precursor and gallium precursor on the crystal surface, thereby affecting the epitaxial growth quality of lithium gallium oxide (LiGa5O8).

[0043] In one embodiment, the molar flow ratio of the lithium precursor to the gallium precursor is in the range of 1:5 to 3:5.

[0044] In one embodiment, the molar flow ratio of the lithium precursor to the oxygen precursor is in the range of 1:100 to 1:6000, or the molar flow ratio of the gallium precursor to the oxygen precursor is in the range of 1:100 to 1:4000.

[0045] In one implementation, the predetermined duration includes 5-60 minutes.

[0046] The epitaxial growth method for lithium gallium oxide (LiGa5O8) films in this application utilizes a MOCVD (Metal-Organic Chemical Vapor Deposition) system. Under predetermined temperature and pressure parameters, lithium, gallium, and oxygen precursors are simultaneously introduced into the reaction chamber at a predetermined molar flow rate ratio to perform chemical vapor deposition, thereby growing a lithium gallium oxide (LiGa5O8) epitaxial film on the substrate surface. Experiments show that under the above process parameters, a stable P-type lithium gallium oxide (LiGa5O8) epitaxial film can be grown on the predetermined substrate surface. Conductivity and absorption spectroscopy tests of the P-type lithium gallium oxide (LiGa5O8) epitaxial film demonstrate its P-type conductivity characteristics, and the bandgap of this P-type lithium gallium oxide (LiGa5O8) epitaxial film can reach an ultra-wide bandgap parameter close to 5.4 eV.

[0047] The method of this application will be further described in detail below with reference to different specific embodiments.

[0048] Example 1

[0049] Figure 3 This is a schematic flowchart of the epitaxial growth method for an ultrawide bandgap lithium gallium oxide epitaxial film according to the first embodiment of this application. Figure 3 As shown, the epitaxial growth method of ultrawide bandgap lithium gallium oxide epitaxial film in this application includes the following steps:

[0050] Step S31: Select sapphire as the substrate material 105;

[0051] Step S32: Adjust the reaction chamber 100 of the MOCVD equipment to a low pressure of 20 mbar;

[0052] Step S33: Adjust the temperature of the reaction chamber 100 to 400°C, and input oxygen into the reaction chamber 100 through the oxygen precursor delivery channel 103 as an oxygen precursor to perform a 60-minute surface pretreatment on the sapphire substrate 105 placed in the reaction chamber 100.

[0053] Step S34: Adjust the temperature of the reaction chamber 100 to 800°C and maintain a constant pressure of 20 mbar;

[0054] Step S35: Select lithium alkoxy (e.g., lithium methoxy) as the lithium precursor and select alkyl gallium as the gallium precursor;

[0055] In step S36, the molar flow rate of lithium alkoxy is adjusted to 1.0E-4 sccm, the molar flow rate of alkyl gallium is 2.1E-4 sccm, and the molar flow rate of oxygen is 0.45 sccm, so that the molar flow rate ratio of lithium alkoxy, alkyl gallium, and oxygen is 1:2.1:4500. Lithium alkoxy, alkyl gallium, and oxygen are simultaneously introduced into the reaction chamber 100 for chemical vapor deposition to grow a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the sapphire substrate 105.

[0056] Example 2

[0057] Figure 4 This is a schematic flowchart of the epitaxial growth method for an ultrawide bandgap lithium gallium oxide epitaxial film according to the second embodiment of this application. Figure 4 As shown, the epitaxial growth method of ultrawide bandgap lithium gallium oxide epitaxial film in this application includes the following steps:

[0058] Step S41, select lithium gallium oxide as substrate material 105;

[0059] Step S42: Adjust the reaction chamber 100 of the MOCVD equipment to a low pressure of 30 mbar;

[0060] Step S43: Adjust the temperature of the reaction chamber 100 to 400°C, and input ozone into the reaction chamber 100 as an oxygen precursor through the oxygen precursor delivery channel 103 to perform a 50-minute surface pretreatment on the lithium gallium oxide substrate 105 placed in the reaction chamber 100.

[0061] Step S44: Adjust the temperature of the reaction chamber 100 to 900°C and maintain a constant pressure of 30 mbar;

[0062] Step S45: Select lithium 2,2,6,6-tetramethyl-3,5-heptadecyl as lithium precursor and gallium alkoxy as gallium precursor.

[0063] In step S46, the molar flow rate of lithium 2,2,6,6-tetramethyl-3,5-heptadecylene is adjusted to 1.5E-4 sccm, the molar flow rate of gallium alkoxy is adjusted to 2.5E-4 sccm, and the molar flow rate of ozone is adjusted to 0.75 sccm, so that the molar flow rate ratio of lithium 2,2,6,6-tetramethyl-3,5-heptadecylene, gallium alkoxy, and ozone is 3:5:15000. Lithium 2,2,6,6-tetramethyl-3,5-heptadecylene, gallium alkoxy, and ozone are simultaneously introduced into the reaction chamber 100 for chemical vapor deposition to grow a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the lithium gallate substrate 105.

[0064] Example 3

[0065] Figure 5 This is a schematic flowchart of the epitaxial growth method for an ultrawide bandgap lithium gallium oxide epitaxial film according to the third embodiment of this application. Figure 5 As shown, the epitaxial growth method of ultrawide bandgap lithium gallium oxide epitaxial film in this application includes the following steps:

[0066] Step S51: Select silicon carbide as the substrate material 105;

[0067] Step S52: Adjust the reaction chamber 100 of the MOCVD equipment to a low pressure of 50 mbar;

[0068] Step S53: Adjust the temperature of the reaction chamber 100 to 500°C, and input nitrous oxide as an oxygen precursor into the reaction chamber 100 through the oxygen precursor delivery channel 103 to perform a 30-minute surface pretreatment on the silicon carbide substrate 105 placed in the reaction chamber 100.

[0069] Step S54: Adjust the temperature of the reaction chamber 100 to 1000°C and maintain a constant pressure of 50 mbar;

[0070] Step S55: Select lithium amino acid as lithium precursor and select alkyl gallium as gallium precursor.

[0071] In step S56, the molar flow rate of lithium amide is adjusted to 8E-5 sccm, the molar flow rate of alkyl gallium is 2E-4 sccm, and the molar flow rate of nitrous oxide is 0.2 sccm, so that the molar flow rate ratio of lithium amide, alkyl gallium, and nitrous oxide is 1:2.5:2500. Lithium amide, alkyl gallium, and nitrous oxide are simultaneously introduced into the reaction chamber 100 for chemical vapor deposition to grow a lithium gallium oxide (LiGa5O8) epitaxial film on the surface of the silicon carbide substrate 105.

[0072] Conductivity and absorption spectroscopy tests were conducted on the lithium gallium oxide (LiGa5O8) epitaxial films grown by the epitaxial growth method of any of the above embodiments. Under the above process parameters, a stable P-type lithium gallium oxide (LiGa5O8) epitaxial film can be grown on the surface of a predetermined substrate material, demonstrating the P-type conductivity characteristics of the P-type lithium gallium oxide (LiGa5O8) epitaxial film. The bandgap of the P-type lithium gallium oxide (LiGa5O8) epitaxial film can reach an ultra-wide bandgap parameter of close to 5.4 eV.

[0073] Figure 6 These are images obtained by scanning electron microscopy (SEM) observation of the grown lithium gallium oxide (LiGa5O8) epitaxial film. Figure 6As shown, the lithium gallium oxide (LiGa5O8) epitaxial films grown in the above embodiments of this application were observed by scanning electron microscopy (SEM), demonstrating that the lithium gallium oxide (LiGa5O8) epitaxial films grown on sapphire substrates, lithium gallium oxide substrates, and silicon carbide substrates at reaction temperatures of 800℃, 900℃, and 1000℃ respectively have good surface flatness and high density characteristics.

[0074] Figure 7 This is the X-ray diffraction (XRD) pattern of the grown lithium gallium oxide (LiGa5O8) epitaxial film. Figure 7 As shown, XRD tests on lithium gallium oxide (LiGa5O8) epitaxial films grown by any embodiment of this application show diffraction peaks near 2θ diffraction angles of 18.86° and 38.26°, which correspond to the (111) and (222) crystal planes of lithium gallium oxide (LiGa5O8), respectively. This indicates that the lithium gallium oxide (LiGa5O8) epitaxial films grown by this method have high-quality single-crystal growth characteristics.

[0075] The foregoing description of exemplary embodiments of this application should be understood as not limiting, but illustrative, and the scope of protection of this application is not limited thereto. It should be understood that those skilled in the art can make modifications and variations to the embodiments of this application without departing from the spirit and scope of this application, and such modifications and variations should be within the scope of protection of this application.

Claims

1. A method for epitaxial growth of ultrawide bandgap lithium gallium oxide epitaxial films, characterized in that, Includes the following steps: When the reaction chamber of the MOCVD equipment is at a first temperature in a first temperature range and a first pressure in a first pressure range, an oxygen precursor is introduced into the reaction chamber to perform a surface pretreatment on the substrate material placed in the reaction chamber for a predetermined duration. The temperature of the reaction chamber is adjusted to a second temperature within the second temperature range, and the first pressure is maintained. A lithium precursor, a gallium precursor, and an oxygen precursor are simultaneously introduced into the reaction chamber based on a predetermined molar flow rate ratio for chemical vapor deposition to grow a p-type lithium gallium oxide (LiGa5O8) epitaxial film on the substrate material surface. The substrate material includes any one of sapphire, lithium gallium oxide, silicon, silicon carbide, gallium oxide, zinc oxide, lithium tantalate, and lithium niobate. The lithium precursor includes any one of 2,2,6,6-tetramethyl-3,5-heptadecyl lithium, alkoxy lithium, alkyl lithium, and amino lithium. The gallium precursor includes any one of alkyl gallium and alkoxy gallium, and the oxygen precursor includes any one of oxygen, ozone, and nitrous oxide. The first temperature range includes 400-800°C, the second temperature range includes 800-1200°C, the first pressure range includes 20-100 mbar, the molar flow ratio of the lithium precursor to the gallium precursor is in the range of 1:5 to 3:5, the molar flow ratio of the lithium precursor to the oxygen precursor is in the range of 1:100 to 1:6000, or the molar flow ratio of the gallium precursor to the oxygen precursor is in the range of 1:100 to 1:4000.

2. The epitaxial growth method for ultrawide bandgap lithium gallium oxide epitaxial films according to claim 1, characterized in that, The second temperature range includes 800-1000℃.

3. The epitaxial growth method for ultrawide bandgap lithium gallium oxide epitaxial films according to claim 1, characterized in that, The first pressure range includes 20-50 mbar.

4. The epitaxial growth method for ultrawide bandgap lithium gallium oxide epitaxial films according to claim 1, characterized in that, The scheduled duration includes 5-60 minutes.

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