Semiconductor device
By designing specific electrode and semiconductor component structures in semiconductor devices, combining insulating members and compound members, the challenges of semiconductor devices in the prior art in terms of current control and leakage current suppression are solved, and higher performance characteristics and lower leakage current are achieved.
Patent Information
- Application Number
- CN202410199811.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-08-10
- Filing Date
- 2024-02-23
- Publication Date
- 2025-02-25
AI Technical Summary
Existing semiconductor devices have challenges in improving the characteristics of semiconductor devices such as transistors, and are particularly difficult to effectively solve in controlling current and suppressing leakage current.
A semiconductor device is designed, which includes a specific electrode and semiconductor member structure, and by providing an insulating member and a compound member, the current path is controlled and leakage current is suppressed. Specifically, the device includes first, second and third electrodes, first and second semiconductor members, and first and second insulating members. The specific structure and composition of these members are used to achieve effective control of current.
Through this structural design, the characteristics of the semiconductor device can be significantly improved, including stable operation, high threshold value and low shutdown resistance, while effectively suppressing leakage current and improving overall performance.
Smart Images
Figure CN119521713A_ABST
Abstract
Description
[0001] This application is based on Japanese Patent Application No. 2023-131140 (filing date August 10, 2023), and claims priority from the aforementioned application, the entire contents of which are incorporated herein by reference. Technical Field
[0002] Embodiments of the present invention relate to a semiconductor device. Background Art
[0003] For example, it is desired to improve the characteristics of semiconductor devices such as transistors. Summary of the invention
[0004] An embodiment of the present invention provides a semiconductor device having improved characteristics.
[0005] According to an embodiment of the present invention, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor component, a second semiconductor component, a first insulating component, and a second insulating component. The first electrode extends along a first direction. The second electrode extends along the first direction. The second direction from the first electrode to the second electrode intersects the first direction. The third electrode extends along the first direction. The position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction. The third electrode includes a first electrode portion. The first semiconductor component contains Al x1 Ga 1－x1 N(0≤x1<1). The first semiconductor component includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region and a sixth partial region. The direction from the first partial region to the first electrode is along a third direction, and the third direction intersects with a plane including the first direction and the second direction. The direction from the second partial region to the second electrode is along the third direction. The direction from the third partial region to the first electrode portion is along the third direction. The position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction. The position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction. The direction from the third partial region to the sixth partial region is along the first direction. The second semiconductor component contains Al x2 Ga 1－x2N(0<x2≤1, x1<x2). The second semiconductor component includes a first semiconductor portion, a second semiconductor portion, and a third semiconductor portion. The direction from the fourth partial region to the first semiconductor portion is along the third direction. The direction from the fifth partial region to the second semiconductor portion is along the third direction. The direction from the sixth partial region to the third semiconductor portion is along the third direction. The first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction. The direction from the first electrode portion to the third semiconductor portion is along the first direction. The first insulating component includes a first insulating portion. The first insulating portion is provided between the third partial region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion. The second insulating component includes a first insulating region. The first insulating region is located between the third electrode and the third semiconductor portion in the first direction.
[0006] According to the semiconductor device having the above structure, it is possible to provide a semiconductor device having improved characteristics. BRIEF DESCRIPTION OF THE DRAWINGS
[0007] Figure 1 This is a schematic plan view illustrating the semiconductor device according to the first embodiment.
[0008] Figure 2 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.
[0009] Figure 3 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.
[0010] Figure 4 This is a schematic plan view illustrating the semiconductor device according to the first embodiment.
[0011] Figure 5 This is a schematic plan view illustrating the semiconductor device according to the first embodiment.
[0012] Figure 6 This is a schematic plan view illustrating the semiconductor device according to the first embodiment.
[0013] Figure 7 This is a schematic plan view illustrating a semiconductor device according to a second embodiment.
[0014] Figure 8 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.
[0015] Fig. 9 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.
[0016] Fig.10 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.
[0017] Fig.11 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.
[0018] Fig.12 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.
[0019] Fig.13 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.
[0020] Fig.14 This is a schematic plan view illustrating a semiconductor device according to a second embodiment.
[0021] Fig.15 This is a schematic plan view illustrating a semiconductor device according to a second embodiment.
[0022] Fig.16 1 is a schematic top view of a semiconductor device according to an exemplary embodiment.
[0023] Fig.17 1 is a schematic top view of a semiconductor device according to an exemplary embodiment.
[0024] Reference numerals
[0025] 10, 20: 1st semiconductor component, 2nd semiconductor component; 10B: nitride component; 10S: substrate; 10i: high resistance region; 21-26: 1st-6th semiconductor parts; 21f: 1st side; 22f: 2nd side; 31: 1st compound component; 41-43: 1st-3rd insulating components; 41a: 1st insulating part; 42a-42d: 1st-4th insulating regions; 51-53: 1st-3rd electrodes; 51C: 1st electrode connecting part; 51P-53P: 1st-3rd electrode pads ; 53C: third electrode connection portion; 53T: groove; 53X: connecting conductive portion; 53a~53c: first to third electrode portions; 110~112, 120, 121, 130, 131: semiconductor device; D1~D3: first to third directions; L1, L2: first and second widths; L53b, L53c: second and third electrode portion lengths; PL1: first plane; R1~R3: first to third regions; d1: first distance; r1~r11: first to 11th partial regions; z53: depth DETAILED DESCRIPTION
[0026] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0027] The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as in reality. Even when the same part is shown, the mutual size and ratio may be shown differently depending on the different drawings.
[0028] In the present specification and each drawing, the same elements as those already described with reference to the previous drawings are denoted by the same reference numerals, and detailed description thereof will be omitted as appropriate.
[0029] (First embodiment)
[0030] Figure 1 This is a schematic plan view illustrating the semiconductor device according to the first embodiment.
[0031] Figure 2 and Figure 3 This is a schematic cross-sectional view illustrating the semiconductor device according to the first embodiment.
[0032] Figure 4 This is a schematic plan view illustrating the semiconductor device according to the first embodiment.
[0033] Figure 2 for Figure 1 A1-A2 line cross-sectional view. Figure 3 for Figure 1 B1-B2 line cross-sectional view.
[0034] like Figures 1 to 3 As shown, the semiconductor device 110 according to the embodiment includes a first electrode 51 , a second electrode 52 , a third electrode 53 , a first semiconductor component 10 , a second semiconductor component 20 , a first insulating member 41 , and a second insulating member 42 .
[0035] The first electrode 51, the second electrode 52, and the third electrode 53 extend along the first direction D1. The first direction D1 is set as the Y-axis direction. A direction perpendicular to the Y-axis direction is set as the X-axis direction. A direction perpendicular to the Y-axis direction and the X-axis direction is set as the Z-axis direction. For each of these electrodes, the length in the Y-axis direction is longer than the length in the X-axis direction, and longer than the length in the Z-axis direction.
[0036] The second direction D2 from the first electrode 51 to the second electrode 52 intersects with the first direction D1. The second direction D2 is, for example, the X-axis direction.
[0037] The position of the third electrode 53 in the second direction D2 is between the position of the first electrode 51 in the second direction D2 and the position of the second electrode 52 in the second direction D2. The third electrode 53 includes a first electrode portion 53a. The first electrode portion 53a extends along the first direction D1.
[0038] The first semiconductor member 10 contains Al x1 Ga 1－x1 N (0≤x1<1). The composition ratio x1 may be, for example, not less than 0 and less than 0.13. The first semiconductor member 10 may be GaN or AlGaN.
[0039] The first semiconductor component 10 includes a first partial region r1, a second partial region r2, a third partial region r3, a fourth partial region r4, a fifth partial region r5, and a sixth partial region r6. The direction from the first partial region r1 to the first electrode 51 is along a third direction D3. The third direction D3 intersects a plane including the first direction D1 and the second direction D2. The third direction D3 is, for example, the Z-axis direction.
[0040] The direction from the second partial region r2 to the second electrode 52 is along the third direction D3. The direction from the third partial region r3 to the first electrode portion 53a is along the third direction D3. The position of the fourth partial region r4 in the second direction D2 is between the position of the first partial region r1 in the second direction D2 and the position of the third partial region r3 in the second direction D2. The position of the fifth partial region r5 in the second direction D2 is between the position of the third partial region r3 in the second direction D2 and the position of the second partial region r2 in the second direction D2. The direction from the third partial region r3 to the sixth partial region r6 is along the first direction D1 (see Figure 3 ).
[0041] The second semiconductor member 20 contains Al x2 Ga 1－x2 N(0<x2≤1, x1<x2). The composition ratio x2 may be, for example, 0.13 or more and 0.4 or less. The second semiconductor member 20 includes, for example, AlGaN.
[0042] like Figure 2 As shown, the second semiconductor member 20 includes a first semiconductor portion 21 and a second semiconductor portion 22. The direction from the fourth partial region r4 to the first semiconductor portion 21 is along the third direction D3. The direction from the fifth partial region r5 to the second semiconductor portion 22 is along the third direction D3.
[0043] like Figure 3 As shown, the second semiconductor component 20 further includes a third semiconductor portion 23. The direction from the sixth partial region r6 to the third semiconductor portion 23 is along the third direction D3. Figure 2 As shown in FIG. 1 , the first electrode portion 53a is located between the first semiconductor portion 21 and the second semiconductor portion 22 in the second direction D2. Figure 3 As shown, the direction from the first electrode portion 53 a to the third semiconductor portion 23 is along the first direction D1 .
[0044] The first insulating member 41 includes a first insulating portion 41a. Figure 2 and Figure 3 As shown, the first insulating portion 41 a is provided between the third partial region r3 and the first electrode portion 53 a , between the first semiconductor portion 21 and the first electrode portion 53 a , and between the first electrode portion 53 a and the second semiconductor portion 22 .
[0045] like Figure 3 As shown, the second insulating member 42 includes a first insulating region 42a. The first insulating region 42a is located between the third electrode 53 and the third semiconductor portion 23 in the first direction D1.
[0046] In the semiconductor device 110, the current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be a potential based on the potential of the first electrode 51. The first electrode 51 functions as a source electrode, for example. The second electrode 52 functions as a drain electrode, for example. The third electrode 53 functions as a gate electrode, for example. The semiconductor device 110 is, for example, a transistor.
[0047] The first semiconductor component 10 includes a portion facing the second semiconductor component 20. A carrier region is formed in this portion. The carrier region is, for example, a two-dimensional electron gas. The semiconductor device 110 is, for example, a HEMT (High Electron Mobility Transistor).
[0048] For example, the distance between the first electrode 51 and the third electrode 53 is shorter than the distance between the third electrode 53 and the second electrode 52. Stable operation is easily obtained.
[0049] In the semiconductor device 110, the first electrode portion 53a of the third electrode 53 is provided between the first semiconductor portion 21 and the second semiconductor portion 22. The first electrode portion 53a is provided, for example, in a groove 53T (or recess) provided in the semiconductor component. Thus, a high threshold value can be easily obtained. For example, a normally-off operation can be obtained. In the semiconductor device 110, the first electrode portion 53a can be provided between the fourth partial region r4 and the fifth partial region r5.
[0050] As described above, in the embodiment, the first insulating region 42a is provided between the third electrode 53 and the third semiconductor portion 23. This can suppress leakage current.
[0051] For example, consider the first reference example in which the first insulating region 42a is not provided. In the first reference example, current easily flows between the first semiconductor portion 21 and the second semiconductor portion 22 via the third semiconductor portion 23. Leakage current is generated. As a result, it is difficult to make the off resistance sufficiently low.
[0052] In contrast, in the embodiment, by providing the first insulating region 42a, leakage current can be suppressed. Accordingly, for example, a normally-off operation with sufficiently low off resistance can be obtained. For example, by making the third electrode 53 not overlap the third semiconductor portion 23 in the Z-axis direction, leakage current can be suppressed. Accordingly, a normally-off operation with sufficiently low off resistance can be obtained. According to the embodiment, a semiconductor device with improved characteristics can be provided.
[0053] For example Figure 1 As shown, the semiconductor device 110 may include a first region R1, a second region R2, and a third region R3. The first region R1 is disposed between the second region R2 and the third region R3 in the first direction D1. The first region R1 is an active region. The second region R2 is one of the plurality of terminal regions. The third region R3 is another of the plurality of terminal regions.
[0054] The first partial region r1, the second partial region r2, the third partial region r3, the fourth partial region r4 and the fifth partial region r5 are included in the first region R1. The sixth partial region r6 is included in the second region R2. The crystallinity of the first region R1 is higher than the crystallinity of the second region R2. Alternatively, the first region R1 contains crystals and the second region R2 does not contain crystals. For example, the crystallinity of the semiconductor component is degraded by injecting Ar plasma into the semiconductor component, thereby forming the second region R2. The first region R1 is a region into which ions are not injected. The concentration of the first element in the second region R2 is higher than the concentration of the first element in the first region R1. The first element includes at least one selected from the group consisting of Ar, P and N.
[0055] For example, consider the second reference example in which the end of the third electrode 53 is provided in the second region R2. In this case, a portion of the second region R2 is covered by the third electrode 53. The portion covered by the third electrode 53 is not ion-implanted and maintains high crystallinity. This portion has high conductivity and becomes a leakage current path.
[0056] For example, the second region R2 includes a portion not covered by the third electrode 53 . When ions are implanted into this portion, the crystallinity may be restored by a subsequent heat treatment. In this case, a leakage current path also exists.
[0057] like Figure 3As shown, in the embodiment, the end of the third electrode 53 is in the first region R1. The portion covered by the third electrode 53 is not provided in the second region R2 as the terminal region. For example, in the first direction D1, the end of the third electrode 53 is retreated from the end of the trench 53T. Accordingly, a portion where the second semiconductor component 20 is not provided is formed in the second region R2 as the terminal region. When ions are implanted in this portion, a region with high crystallinity is not formed in the second region R2 as the terminal region. No carrier region is formed in the second region R2. The first insulating region 42a is provided in the portion where the third electrode 53 is retreated. The current path is reliably cut off.
[0058] For example, Figure 3 As shown, the second region R2 includes a high resistance region 10i. The high resistance region 10i is a region into which Ar plasma is implanted. The sixth partial region r6 and the third semiconductor portion 23 are included in the high resistance region 10i. The crystallinity in these regions included in the high resistance region 10i is lower than the crystallinity in the region (first region R1) not included in the high resistance region 10i.
[0059] For example, the crystallinity of the first semiconductor portion 21 is higher than the crystallinity of the third semiconductor portion 23. Alternatively, the first semiconductor portion 21 contains crystals, and the third semiconductor portion 23 does not contain crystals.
[0060] For example, the crystallinity of the fourth partial region r4 is higher than that of the sixth partial region r6. Alternatively, the fourth partial region r4 contains crystals, and the sixth partial region r6 does not contain crystals. For example, the crystallinity of the fifth partial region r5 is higher than that of the sixth partial region r6. Alternatively, the fifth partial region r5 contains crystals, and the sixth partial region r6 does not contain crystals.
[0061] like Figure 3 As shown, the first semiconductor component 10 may further include a seventh partial region r7. The third partial region r3 is disposed between the seventh partial region r7 and the sixth partial region r6 in the first direction D1. The second semiconductor component 20 may further include a fourth semiconductor portion 24. The first electrode portion 53a is located between the fourth semiconductor portion 24 and the third semiconductor portion 23 in the first direction D1. The second insulating component 42 may further include a second insulating region 42b. The second insulating region 42b is located between the fourth semiconductor portion 24 and the third electrode 53 in the first direction D1.
[0062] The third region R3 is, for example, a region into which Ar plasma is implanted. The seventh partial region r7 and the fourth semiconductor portion 24 are included in the third region R3. The crystallinity of the seventh partial region r7 and the fourth semiconductor portion 24 included in the third region R3 is lower than that of the portion included in the first region R1.
[0063] For example, Figure 3 As shown, the third region R3 includes a high resistance region 10i. The high resistance region 10i is a region into which Ar plasma is implanted. The seventh partial region r7 and the fourth semiconductor portion 24 are included in the high resistance region 10i. The crystallinity in these regions included in the high resistance region 10i is lower than the crystallinity in the region (first region R1) not included in the high resistance region 10i.
[0064] For example, the crystallinity of the first semiconductor portion 21 is higher than the crystallinity of the fourth semiconductor portion 24. Alternatively, the first semiconductor portion 21 contains crystals, and the fourth semiconductor portion 24 does not contain crystals.
[0065] The crystallinity of the fourth partial region r4 is higher than that of the seventh partial region r7. Alternatively, the fourth partial region r4 contains crystals, and the seventh partial region r7 does not contain crystals. The crystallinity of the fifth partial region r5 is higher than that of the seventh partial region r7. Alternatively, the fifth partial region r5 contains crystals, and the seventh partial region r7 does not contain crystals.
[0066] In this way, the crystallinity of the first region R1 is higher than that of the third region R3. Alternatively, the first region R1 contains crystals, and the third region R3 does not contain crystals.
[0067] like Figure 1 As shown in FIG. 1 , the third electrode 53 does not overlap with the second region R2 in the third direction D3, and does not overlap with the third region R3 in the third direction D3. In this example, the second electrode 52 does not overlap with the second region R2 in the third direction D3, and does not overlap with the third region R3 in the third direction D3. For example, the first electrode 51 does not overlap with the second region R2 in the third direction D3, and does not overlap with the third region R3 in the third direction D3.
[0068] like Figure 2 and Figure 3 As shown, the semiconductor device 110 may further include a first compound component 31. The first compound component 31 contains Al z1 Ga 1－z1 N(0<z1≤1, x2<z1). The composition ratio z1 may be, for example, 0.7 or more and 1 or less. The first compound member 31 includes, for example, AlN or AlGaN.
[0069] At least a portion of the first compound component 31 is disposed between the third partial region r3 and the first insulating portion 41a, between the first semiconductor portion 21 and the first insulating portion 41a, and between the first insulating portion 41a and the second semiconductor portion 22. By providing the first compound component 31, for example, high mobility can be easily obtained. The resistance of the semiconductor device 110 can be reduced. In the first reference example in which the first insulating region 42a is not provided, when the first compound component 31 is provided, current leakage tends to increase. By providing the first insulating region 42a, current leakage can be effectively reduced even when the first compound component 31 is provided. High mobility and small leakage current can be easily obtained.
[0070] like Figure 2 As shown, the semiconductor device 110 may further include a third insulating member 43. The first semiconductor portion 21 is disposed between the fourth partial region r4 and a portion of the third insulating member 43. The second semiconductor portion 22 is disposed between the fifth partial region r5 and a portion of the third insulating member 43. The third semiconductor portion 23 is disposed between the sixth partial region r6 and a portion of the third insulating member 43. The fourth semiconductor portion 24 is disposed between the seventh partial region r7 and a portion of the third insulating member 43. The third insulating member 43 is disposed between the second semiconductor component 20 and the first insulating member 41. The third insulating member 43, for example, contains at least one selected from the group consisting of silicon, oxygen, and nitrogen. The third insulating member 43 functions, for example, as a protective film for the second semiconductor component 20. Current collapse is suppressed.
[0071] For example, the first insulating member 41 and the second insulating member 42 may contain silicon and oxygen. For example, the first insulating member 41 and the second insulating member 42 may contain at least one selected from the group consisting of silicon and aluminum and at least one selected from the group consisting of oxygen and nitrogen.
[0072] like Figure 2 As shown, the first semiconductor portion 21 includes a first side surface 21f facing the first electrode portion 53a. The second semiconductor portion 22 includes a second side surface 22f facing the first electrode portion 53a. The first side surface 21f and the second side surface 22f correspond to the side surfaces of the trench 53T.
[0073] like Figure 1 and Figure 2As shown, the third electrode 53 may include a second electrode portion 53b. The first electrode portion 53a is located between the third partial region r3 and the second electrode portion 53b. The length of the second electrode portion 53b along the second direction D2 (second electrode portion length L53b) may be longer than the first distance d1 between the first side surface 21f and the second side surface 22f along the second direction D2. In the third direction D3, a portion of the first insulating member 41 may be disposed between a portion of the second semiconductor member 20 and the second electrode portion 53b.
[0074] like Figure 4 As shown, the planar shapes of the first insulating region 42a and the second insulating region 42b may be planar shapes along the trench 53T. The first width L1 of the first insulating region 42a along the second direction D2 may be substantially the same as the first distance d1. The second width L2 of the second insulating region 42b along the second direction D2 may be substantially the same as the first distance d1. The first width L1 is shorter than the second electrode portion length L53b. The second width L2 is shorter than the second electrode portion length L53b.
[0075] The depth z53 of the groove 53T (see Figure 2 ) For example, it can be greater than 100nm and less than 400nm. The depth z53 of the groove 53T corresponds to the distance along the third direction D3 between the interface between the third partial region r3 and the first compound component 31 and the interface between the second semiconductor component 20 and the third insulating component 43. When the depth z53 of the groove 53T is greater than 100nm, current leakage can be effectively suppressed. It is easy to obtain a high threshold voltage. When the depth z53 of the groove 53T is less than 400nm, it is easy to reduce the on-resistance of the semiconductor device 110.
[0076] The distance between the third partial region r3 and the first electrode portion 53a along the third direction D3 is preferably, for example, greater than 20 nm and less than 150 nm. A highly stable operation can be obtained. By making the distance greater than 20 nm, for example, an operation with a stable threshold voltage can be easily obtained. By making the distance less than 150 nm, for example, a low on-resistance can be easily obtained.
[0077] like Figure 2 As shown, in this example, the semiconductor device 110 includes a substrate 10S and a nitride component 10B. The nitride component 10B is provided between the substrate 10S and the first semiconductor component 10. The substrate 10S may be, for example, a silicon substrate. The nitride component 10B may contain, for example, Al, Ga, and nitrogen. The nitride component 10B is, for example, a buffer layer.
[0078] Figure 5 This is a schematic plan view illustrating the semiconductor device according to the first embodiment.
[0079] like Figure 5 As shown, in the semiconductor device 111, the shapes of the first insulating region 42a and the second insulating region 42b are different from those in the semiconductor device 110. The structure of the semiconductor device 111 other than this may be the same as that of the semiconductor device 110. The plane shapes of the first insulating region 42a and the second insulating region 42b may be, for example, trapezoidal. Their plane shapes may also be, for example, rectangular.
[0080] If targeted Figure 2 As described above, the first semiconductor portion 21 includes the first side surface 21f facing the first electrode portion 53a. The second semiconductor portion 22 includes the second side surface 22f facing the first electrode portion 53a. Figure 2 and Figure 5 As shown, the distance between the first side surface 21f and the second side surface 22f along the second direction D2 is a first distance d1.
[0081] like Figure 5 As shown, in the semiconductor device 111, the first distance d1 is narrower than the first width L1 of at least a portion of the first insulating region 42a along the second direction D2. The first distance d1 is narrower than the second width L2 of at least a portion of the second insulating region 42b along the second direction D2. With the wide first width L1 and second width L2, the current path is more reliably cut off.
[0082] It is preferred that the first width L1 and the second width L2 are each 1.5 times or more and 10 times or less of the first distance d1.
[0083] Figure 6 This is a schematic plan view illustrating the semiconductor device according to the first embodiment.
[0084] like Figure 6 As shown in FIG. 1 , a plurality of third electrodes 53 are provided in the semiconductor device 112. The structure of the semiconductor device 112 other than this may be the same as that of the semiconductor device 110.
[0085] like Figure 6 As shown in FIG. 1 , a plurality of first insulating regions 42a are provided corresponding to the plurality of third electrodes 53. A direction from one of the plurality of third electrodes 53 to one of the plurality of first insulating regions 42a is along the first direction D1. A direction from another of the plurality of third electrodes 53 to another of the plurality of first insulating regions 42a is along the first direction D1. In a first plane PL1 including the first direction D1 and the second direction D2, one of the plurality of first insulating regions 42a is continuous with another of the plurality of first insulating regions 42a.
[0086] For example, in the second region R2 , the current path between the first electrode 51 and the second electrode 52 is more reliably cut off.
[0087] (Second embodiment)
[0088] Figure 7 This is a schematic plan view illustrating a semiconductor device according to a second embodiment.
[0089] Figure 8 to Figure 13 This is a schematic cross-sectional view illustrating a semiconductor device according to a second embodiment.
[0090] Figure 8 for Figure 7 A1-A2 line cross-sectional view. Fig. 9 for Figure 7 A3-A4 line section view. Fig.10 for Figure 7 A5-A6 line section view. Fig.11 for Figure 7 B1-B2 line cross-sectional view. Fig.12 for Figure 7 B3-B4 line cross-sectional view. Fig.13 for Figure 7 B5-B6 line cross-sectional view.
[0091] like Figure 7 to Figure 12 As shown, the semiconductor device 120 according to the embodiment includes a first electrode 51 , a second electrode 52 , a third electrode 53 , a first semiconductor component 10 , a second semiconductor component 20 , a first insulating member 41 , and a second insulating member 42 .
[0092] The first electrode 51, the second electrode 52, and the third electrode 53 extend along the first direction D1. The second direction D2 from the first electrode 51 to the second electrode 52 intersects the first direction D1. The position of the third electrode 53 in the second direction D2 is between the position of the first electrode 51 in the second direction D2 and the position of the second electrode 52 in the second direction D2. The third electrode 53 includes a first electrode portion 53a.
[0093] The first semiconductor member 10 contains Al x1 Ga 1－x1 N(0≤x1<1) The first semiconductor component 10 includes a first partial region r1, a second partial region r2, a third partial region r3, a fourth partial region r4, a fifth partial region r5, a sixth partial region r6, and a seventh partial region r7.
[0094] like Figure 8As shown, the direction from the first partial region r1 to the first electrode 51 is along the third direction D3, and the third direction D3 intersects the plane including the first direction D1 and the second direction D2. The direction from the second partial region r2 to the second electrode 52 is along the third direction D3. The direction from the third partial region r3 to the first electrode portion 53a is along the third direction D3.
[0095] like Figure 8 As shown, the position of the fourth partial region r4 in the second direction D2 is set between the position of the first partial region r1 in the second direction D2 and the position of the third partial region r3 in the second direction D2. The position of the fifth partial region r5 in the second direction D2 is set between the position of the third partial region r3 in the second direction D2 and the position of the second partial region r2 in the second direction D2.
[0096] like Fig.11 As shown in FIG. 1 , the direction from the third partial region r3 to the sixth partial region r6 is along the first direction D1. Fig. 9 As shown, the direction from the seventh partial region r7 to the sixth partial region r6 is along the second direction D2.
[0097] The second semiconductor member 20 contains Al x2 Ga 1－x2 N(0<x2≤1, x1<x2) The second semiconductor member 20 includes a first semiconductor portion 21 , a second semiconductor portion 22 , and a third semiconductor portion 23 .
[0098] like Figure 8 As shown in FIG. 1 , the direction from the fourth partial region r4 to the first semiconductor portion 21 is along the third direction D3. The direction from the fifth partial region r5 to the second semiconductor portion 22 is along the third direction D3. Fig. 9 As shown in FIG. 1 , the direction from the seventh partial region r7 to the third semiconductor portion 23 is along the third direction D3. Figure 8 As shown, the first electrode portion 53 a is provided between the first semiconductor portion 21 and the second semiconductor portion 22 in the second direction D2 .
[0099] The crystallinity of the first semiconductor portion 21 is higher than that of the third semiconductor portion 23. Alternatively, the first semiconductor portion 21 contains crystals, and the third semiconductor portion 23 does not contain crystals. Fig. 9 As shown, the seventh partial region r7 and the third semiconductor portion 23 are included in the high resistance region 10i. The seventh partial region r7 and the third semiconductor portion 23 are included in the second region R2 (see Figure 7 )middle.
[0100] like Figure 8 and Fig.11As shown, the first insulating member 41 includes a first insulating portion 41 a . The first insulating portion 41 a is provided between the third partial region r3 and the first electrode portion 53 a , between the first semiconductor portion 21 and the first electrode portion 53 a , and between the first electrode portion 53 a and the second semiconductor portion 22 .
[0101] like Figure 7 and Fig. 9 As shown, the second insulating member 42 includes a first insulating region 42a. The first insulating region 42a is provided between the third semiconductor portion 23 and the third electrode 53 in the second direction D2.
[0102] In the semiconductor device 120, the current path is blocked by the first insulating region 42a, so that leakage current is suppressed and a semiconductor device having improved characteristics can be provided.
[0103] like Fig. 9 As shown, the first semiconductor component 10 may further include an eighth partial region r8. The sixth partial region r6 is disposed between the seventh partial region r7 and the eighth partial region r8 in the second direction D2. The second semiconductor component 20 may further include a fourth semiconductor portion 24. The direction from the eighth partial region r8 to the fourth semiconductor portion 24 is along the third direction D3.
[0104] At least a portion of the eighth partial region r8 and the fourth semiconductor portion 24 are included in the high resistance region 10i. At least a portion of the eighth partial region r8 and the fourth semiconductor portion 24 are included in the second region R2.
[0105] For example, the crystallinity of the second semiconductor portion 22 is higher than the crystallinity of the fourth semiconductor portion 24. Alternatively, the second semiconductor portion 22 contains crystals, and the fourth semiconductor portion 24 does not contain crystals.
[0106] like Fig. 9 As shown, the second insulating member 42 further includes a second insulating region 42b. The second insulating region 42b is provided between the third electrode 53 and the fourth semiconductor portion 24 in the second direction D2. The second insulating region 42b more reliably cuts off the current path, thereby suppressing leakage current.
[0107] like Fig.10 As shown, the first semiconductor component 10 may further include a ninth partial region r9. Fig.11 As shown, the third partial region r3 is provided between the ninth partial region r9 and the sixth partial region r6 in the first direction D1.
[0108] like Fig.10As shown, the first semiconductor component 10 may further include a tenth partial region r10. The direction from the tenth partial region r10 to the ninth partial region r9 is along the second direction D2. The second semiconductor component 20 may further include a fifth semiconductor portion 25. The direction from the tenth partial region r10 to the fifth semiconductor portion 25 is along the third direction D3.
[0109] The second insulating member 42 may include a third insulating region 42c. The third insulating region 42c is provided between the fifth semiconductor portion 25 and the third electrode 53 in the second direction D2. The third insulating region 42c can more reliably cut off the current path and suppress leakage current.
[0110] like Fig.10 As shown, the first semiconductor component 10 may further include an 11th partial region r11. In the second direction D2, the 9th partial region r9 is between the 10th partial region r10 and the 11th partial region r11. The second semiconductor component 20 may further include a 6th semiconductor portion 26. The direction from the 11th partial region r11 to the 6th semiconductor portion 26 is along the third direction D3.
[0111] The second insulating member 42 may include a fourth insulating region 42d. The fourth insulating region 42d is provided between the third electrode 53 and the sixth semiconductor portion 26 in the second direction D2. The fourth insulating region 42d can more reliably cut off the current path and suppress leakage current.
[0112] At least a portion of the tenth partial region r10 and the fifth semiconductor portion 25 are included in the high resistance region 10i. At least a portion of the tenth partial region r10 and the fifth semiconductor portion 25 are included in the third region R3.
[0113] At least a portion of the 11th partial region r11 and the sixth semiconductor portion 26 are included in the high resistance region 10i. At least a portion of the 11th partial region r11 and the sixth semiconductor portion 26 are included in the third region R3.
[0114] For example, the crystallinity of the first semiconductor portion 21 is higher than that of the fifth semiconductor portion 25. Alternatively, the first semiconductor portion 21 contains crystals, and the fifth semiconductor portion 25 does not contain crystals. The crystallinity of the second semiconductor portion 22 is higher than that of the sixth semiconductor portion 26. Alternatively, the second semiconductor portion 22 contains crystals, and the sixth semiconductor portion 26 does not contain crystals.
[0115] For example, the crystallinity of the 9th partial region r9 is higher than that of the 10th partial region r10. Alternatively, the 9th partial region r9 contains crystals, and the 10th partial region r10 does not contain crystals. For example, the crystallinity of the 9th partial region r9 is higher than that of the 11th partial region r11. Alternatively, the 9th partial region r9 contains crystals, and the 11th partial region r11 does not contain crystals.
[0116] like Figure 8 As shown, the semiconductor device 120 may include a first compound component 31. The first compound component 31 contains Al z1 Ga 1－z1 N(0<z1≤1, x2<z1). At least a portion of the first compound member 31 is provided between the third partial region r3 and the first insulating portion 41a, between the first semiconductor portion 21 and the first insulating portion 41a, and between the first insulating portion 41a and the second semiconductor portion 22. By providing the first compound member 31, for example, high mobility can be easily obtained. The resistance of the semiconductor device 120 can be reduced.
[0117] Fig.14 This is a schematic plan view illustrating a semiconductor device according to a second embodiment.
[0118] like Fig.14 As shown in FIG. 1 , in the semiconductor device 121 of the embodiment, the third electrode 53 includes a third electrode portion 53 c. The structure of the semiconductor device 121 other than this may be the same as that of the semiconductor device 120 .
[0119] like Fig.14 As shown in FIG. 5 , the third electrode 53 includes a second electrode portion 53b and a third electrode portion 53c. Figure 8 As shown, the first electrode portion 53a is provided between the third partial region r3 and the second electrode portion 53b in the third direction D3.
[0120] like Fig.14 As shown, the position of the first insulating region 42a in the first direction D1 is between the position of the first electrode portion 53a in the first direction D1 and the position of the third electrode portion 53c in the first direction D1. Fig.14 As shown, the length of the third electrode portion 53c in the second direction D2 is set to the third electrode portion length L53c. The length of the second electrode portion 53b in the second direction D2 is set to the second electrode portion length L53b. The third electrode portion length L53c is longer than the second electrode portion length L53b. By providing such a third electrode portion 53c, the connection between the third electrode 53 and the wiring becomes easy.
[0121] Fig.15 This is a schematic plan view illustrating a semiconductor device according to a second embodiment.
[0122] like Fig.15 As shown in FIG. 1 , a plurality of third electrodes 53 are provided in the semiconductor device 122 of the embodiment. The structure of the semiconductor device 122 other than this may be the same as that of the semiconductor device 120 .
[0123] like Fig.15 As shown in the figure, in this example, the second insulating region 42b is continuously provided between one electrode among the plurality of third electrodes 53 and another electrode among the plurality of third electrodes 53. The first insulating region 42a and the second insulating region 42b are interchangeable. In the embodiment, any of the first insulating region 42a and the second insulating region 42b may be continuously provided between one electrode among the plurality of third electrodes 53 and another electrode among the plurality of third electrodes 53.
[0124] like Fig.15 As shown, the semiconductor device 122 may further include a connecting conductive portion 53X. The connecting conductive portion 53X extends along the second direction D2. The position of the first insulating region 42a in the first direction D1 is between the position of the first electrode portion 53a in the first direction D1 and the position of the connecting conductive portion 53X in the first direction D1. For example, a plurality of third electrodes 53 are provided. The connecting conductive portion 53X electrically connects one electrode of the plurality of third electrodes 53 to another electrode of the plurality of third electrodes 53.
[0125] Fig.16 1 is a schematic top view of a semiconductor device according to an exemplary embodiment.
[0126] like Fig.16 As shown, the semiconductor device 130 of the embodiment includes a first electrode pad 51P, a second electrode pad 52P, and a third electrode pad 53P. The other structures of the semiconductor device 130 may be the same as those of the semiconductor devices of the first and second embodiments and their modifications.
[0127] The semiconductor device 130 includes a plurality of first electrodes 51, a plurality of second electrodes 52, and a plurality of third electrodes 53. The first electrode pad 51P is electrically connected to the plurality of first electrodes 51. The second electrode pad 52P is electrically connected to the plurality of second electrodes 52. The third electrode pad 53P is electrically connected to the plurality of third electrodes 53.
[0128] For example, the first electrode pad 51P and the third electrode pad 53P are provided in the third region R3 , and the second electrode pad 52P is provided in the second region R2 .
[0129] Fig.17 1 is a schematic top view of a semiconductor device according to an exemplary embodiment.
[0130] like Fig.17 As shown in FIG. 1 , the semiconductor device 131 of the embodiment includes a first electrode connecting portion 51C and a third electrode connecting portion 53C. The structure of the semiconductor device 131 other than this may be the same as that of the semiconductor device 130 .
[0131] The first electrode connection portion 51C and the third electrode connection portion 53C extend along the second direction D2. The first electrode connection portion 51C electrically connects the plurality of first electrodes 51. The third electrode connection portion 53C electrically connects the plurality of third electrodes 53. At least the first insulating region 42a is also provided in the semiconductor device 130 and the semiconductor device 131. Leakage current can be suppressed. A semiconductor device with improved characteristics can be provided.
[0132] In an embodiment, information related to the length and thickness can be obtained by electron microscope observation, etc. Information related to the material composition can be obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy dispersive X-ray spectroscopy), etc.
[0133] The implementation method may include the following technical solutions.
[0134] (Technical Solution 1)
[0135] A semiconductor device comprising:
[0136] a first electrode extending along a first direction;
[0137] a second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction;
[0138] a third electrode extending along the first direction, wherein the position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction, and the third electrode includes a first electrode portion;
[0139] The first semiconductor member contains Al x1 Ga 1－x1N(0≤x1<1), the first semiconductor component includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region and a sixth partial region, the direction from the first partial region to the first electrode is along a third direction, the third direction intersecting a plane including the first direction and the second direction, the direction from the second partial region to the second electrode is along the third direction, the direction from the third partial region to the first electrode portion is along the third direction, the position of the fourth partial region in the second direction is between the position of the first partial region in the second direction and the position of the third partial region in the second direction, the position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and the position of the second partial region in the second direction, and the direction from the third partial region to the sixth partial region is along the first direction;
[0140] The second semiconductor member contains Al x2 Ga 1－x2 N(0<x2≤1, x1<x2), the second semiconductor component includes a first semiconductor portion, a second semiconductor portion and a third semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the third direction, the direction from the fifth partial region to the second semiconductor portion is along the third direction, the direction from the sixth partial region to the third semiconductor portion is along the third direction, the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction, and the direction from the first electrode portion to the third semiconductor portion is along the first direction;
[0141] a first insulating member including a first insulating portion, the first insulating portion being provided between the third partial region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion; and
[0142] The second insulating member includes a first insulating region located between the third electrode and the third semiconductor portion in the first direction.
[0143] (Technical Solution 2)
[0144] The semiconductor device according to claim 1, wherein:
[0145] The crystallinity of the first semiconductor portion is higher than the crystallinity of the third semiconductor portion, or,
[0146] The first semiconductor portion contains crystals, and the third semiconductor portion does not contain crystals.
[0147] (Technical Solution 3)
[0148] The semiconductor device according to claim 1 or 2, wherein:
[0149] The crystallinity of the fourth partial region is higher than the crystallinity of the sixth partial region, or,
[0150] The fourth partial region contains crystals, and the sixth partial region does not contain crystals.
[0151] (Technical Solution 4)
[0152] The semiconductor device according to any one of claims 1 to 3, wherein:
[0153] The first semiconductor portion includes a first side surface facing the first electrode portion,
[0154] The second semiconductor portion includes a second side surface facing the first electrode portion,
[0155] A first distance between the first side surface and the second side surface along the second direction is narrower than a first width of at least a portion of the first insulating region along the second direction.
[0156] (Technical Solution 5)
[0157] The semiconductor device according to claim 1, wherein:
[0158] The first semiconductor component further includes a seventh partial region,
[0159] The third partial region is located between the seventh partial region and the sixth partial region in the first direction,
[0160] The second semiconductor component further includes a fourth semiconductor portion,
[0161] The first electrode portion is located between the fourth semiconductor portion and the third semiconductor portion in the first direction,
[0162] The second insulating member further includes a second insulating region,
[0163] The second insulating region is located between the fourth semiconductor portion and the third electrode in the first direction.
[0164] (Technical Solution 6)
[0165] The semiconductor device according to technical solution 5, wherein:
[0166] The crystallinity of the first semiconductor portion is higher than the crystallinity of the fourth semiconductor portion, or
[0167] The first semiconductor portion contains crystals, and the fourth semiconductor portion does not contain crystals.
[0168] (Technical Solution 7)
[0169] The semiconductor device according to claim 5 or 6, wherein:
[0170] The crystallinity of the fourth partial region is higher than the crystallinity of the seventh partial region, or
[0171] The fourth partial region contains crystals, and the seventh partial region does not contain crystals.
[0172] (Technical Solution 8)
[0173] The semiconductor device according to any one of technical solutions 5 to 7, wherein:
[0174] The first semiconductor component includes a first region, a second region, and a third region.
[0175] The first region is disposed between the second region and the third region in the first direction,
[0176] The first partial region, the second partial region, the third partial region, the fourth partial region, and the fifth partial region are included in the first region,
[0177] The sixth partial area is included in the second area,
[0178] The seventh partial area is included in the third area,
[0179] The crystallinity of the first region is higher than that of the second region and higher than that of the third region, or the first region contains crystals and the second region and the third region do not contain crystals.
[0180] (Technical Solution 9)
[0181] The semiconductor device according to technical solution 8, wherein:
[0182] The third electrode does not overlap with the second region in the third direction, and does not overlap with the third region in the third direction.
[0183] (Technical Solution 10)
[0184] The semiconductor device according to technical solution 8 or 9, wherein:
[0185] The second electrode does not overlap with the second region in the third direction, and does not overlap with the third region in the third direction.
[0186] (Technical Solution 11)
[0187] The semiconductor device according to any one of technical solutions 5 to 10, wherein:
[0188] The first semiconductor portion includes a first side surface facing the first electrode portion,
[0189] The second semiconductor portion includes a second side surface facing the first electrode portion,
[0190] A first distance between the first side surface and the second side surface along the second direction is narrower than a second width of at least a portion of the second insulating region along the second direction.
[0191] (Technical Solution 12)
[0192] The semiconductor device according to any one of technical solutions 1 to 11, wherein:
[0193] A plurality of the third electrodes are provided,
[0194] A plurality of the first insulating regions are provided,
[0195] A direction from one of the plurality of third electrodes to one of the plurality of first insulating regions is along the first direction,
[0196] A direction from another electrode among the plurality of third electrodes to another insulating region among the plurality of first insulating regions is along the first direction,
[0197] In a first plane including the first direction and the second direction, the one insulating region among the plurality of first insulating regions is continuous with the other insulating region among the plurality of first insulating regions.
[0198] (Technical Solution 13)
[0199] The semiconductor device according to any one of technical solutions 1 to 12, wherein:
[0200] further comprising a third electrode connecting portion,
[0201] A plurality of the third electrodes are provided,
[0202] The third electrode connecting portion electrically connects the plurality of third electrodes to each other.
[0203] (Technical Solution 14)
[0204] The semiconductor device according to any one of technical solutions 1 to 13, wherein:
[0205] The invention further comprises a first compound member, wherein the first compound member contains Al z1 Ga 1－z1 N(0<z1≤1,x2<z1),
[0206] At least a portion of the first compound member is provided between the third partial region and the first insulating portion, between the first semiconductor portion and the first insulating portion, and between the first insulating portion and the second semiconductor portion.
[0207] (Technical Solution 15)
[0208] A semiconductor device comprising:
[0209] a first electrode extending along a first direction;
[0210] a second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction;
[0211] a third electrode extending along the first direction, wherein the position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction, and the third electrode includes a first electrode portion;
[0212] The first semiconductor member contains Al x1 Ga 1－x1 N(0≤x1<1), the first semiconductor component includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region and a seventh partial region, a direction from the first partial region to the first electrode is along a third direction, the third direction intersecting a plane including the first direction and the second direction, a direction from the second partial region to the second electrode is along the third direction, a direction from the third partial region to the first electrode portion is along the third direction, a position of the fourth partial region in the second direction is between a position of the first partial region in the second direction and a position of the third partial region in the second direction, a position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and a position of the second partial region in the second direction, a direction from the third partial region to the sixth partial region is along the first direction, and a direction from the seventh partial region to the sixth partial region is along the second direction;
[0213] The second semiconductor member contains Alx2 Ga 1－x2 N(0<x2≤1, x1<x2), the second semiconductor component includes a first semiconductor portion, a second semiconductor portion and a third semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the third direction, the direction from the fifth partial region to the second semiconductor portion is along the third direction, and the direction from the seventh partial region to the third semiconductor portion is along the third direction, the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction, the crystallinity of the first semiconductor portion is higher than the crystallinity of the third semiconductor portion, or the first semiconductor portion contains crystals and the third semiconductor portion does not contain crystals;
[0214] a first insulating member including a first insulating portion, the first insulating portion being provided between the third partial region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion; and
[0215] The second insulating member includes a first insulating region located between the third semiconductor portion and the third electrode in the second direction.
[0216] (Technical Solution 16)
[0217] The semiconductor device according to technical solution 15, wherein:
[0218] The first semiconductor component further includes an eighth partial region,
[0219] The sixth partial region is located between the seventh partial region and the eighth partial region in the second direction,
[0220] The second semiconductor component further includes a fourth semiconductor portion,
[0221] The direction from the eighth partial region to the fourth semiconductor portion is along the third direction,
[0222] The crystallinity of the second semiconductor portion is higher than that of the fourth semiconductor portion, or the second semiconductor portion contains crystals and the fourth semiconductor portion does not contain crystals,
[0223] The second insulating member further includes a second insulating region,
[0224] The second insulating region is provided between the third electrode and the fourth semiconductor portion in the second direction.
[0225] (Technical Solution 17)
[0226] A semiconductor device according to technical solution 15 or 16, wherein:
[0227] The third electrode further includes a second electrode portion and a third electrode portion,
[0228] The first electrode portion is located between the third partial region and the second electrode portion in the third direction,
[0229] The position of the first insulating region in the first direction is between the position of the first electrode portion in the first direction and the position of the third electrode portion in the first direction.
[0230] A third electrode portion length of the third electrode portion in the second direction is longer than a second electrode portion length of the second electrode portion in the second direction.
[0231] (Technical Solution 18)
[0232] A semiconductor device according to technical solution 16, wherein:
[0233] A plurality of the third electrodes are provided,
[0234] Any one of the first insulating region and the second insulating region is continuously provided between one electrode among the plurality of third electrodes and another electrode among the plurality of third electrodes.
[0235] (Technical Solution 19)
[0236] The semiconductor device according to technical solution 15, wherein:
[0237] further comprising a connecting conductive portion extending along the second direction,
[0238] The position of the first insulating region in the first direction is between the position of the first electrode portion in the first direction and the position of the connecting conductive portion in the first direction.
[0239] A plurality of the third electrodes are provided,
[0240] The connecting conductive portion electrically connects one electrode among the plurality of third electrodes to another electrode among the plurality of third electrodes.
[0241] (Technical Solution 20)
[0242] A semiconductor device according to technical solution 15 or 16, wherein:
[0243] The invention further comprises a first compound member, wherein the first compound member contains Al z1 Ga1－z1 N(0<z1≤1,x2<z1),
[0244] At least a portion of the first compound member is provided between the third partial region and the first insulating portion, between the first semiconductor portion and the first insulating portion, and between the first insulating portion and the second semiconductor portion.
[0245] According to the embodiment, a semiconductor device having improved characteristics can be provided.
[0246] The embodiments of the present invention are described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, as long as a person skilled in the art can select from the known range to implement the present invention in the same manner and obtain the same effect, the specific structure of each element such as a semiconductor component, an electrode, and an insulating component included in the semiconductor device is included in the scope of the present invention.
[0247] Furthermore, any combination of two or more elements in each specific example within a technically possible range is also included in the scope of the present invention as long as the gist of the present invention is included.
[0248] Furthermore, all semiconductor devices that can be implemented by a person skilled in the art making appropriate design changes based on the semiconductor devices described above as embodiments of the present invention also belong to the scope of the present invention as long as they include the gist of the present invention.
[0249] Furthermore, it should be understood that within the scope of the present invention, those skilled in the art may conceive of various changes and modifications, which also fall within the scope of the present invention.
[0250] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and changes can be made without departing from the scope of the invention. These embodiments and their variations are included in the scope or spirit of the invention, and are included in the invention described in the claims and the scope of their equivalents.
Claims
1. A semiconductor device comprising: a first electrode extending along a first direction; a second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction; a third electrode extending along the first direction, wherein the position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction, and the third electrode includes a first electrode portion; The first semiconductor member contains Al x1 Ga 1－x1 N, wherein 0≤x1<1, the first semiconductor component includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region and a sixth partial region, a direction from the first partial region to the first electrode is along a third direction, the third direction intersecting a plane including the first direction and the second direction, a direction from the second partial region to the second electrode is along the third direction, a direction from the third partial region to the first electrode portion is along the third direction, a position of the fourth partial region in the second direction is between a position of the first partial region in the second direction and a position of the third partial region in the second direction, a position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and a position of the second partial region in the second direction, and a direction from the third partial region to the sixth partial region is along the first direction; The second semiconductor member contains Al x2 Ga 1－x2 N, wherein 0<x2≤1, x1<x2, the second semiconductor component comprises a first semiconductor portion, a second semiconductor portion and a third semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the third direction, the direction from the fifth partial region to the second semiconductor portion is along the third direction, the direction from the sixth partial region to the third semiconductor portion is along the third direction, the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction, and the direction from the first electrode portion to the third semiconductor portion is along the first direction; a first insulating member, comprising a first insulating portion, the first insulating portion being disposed between the third partial region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion; as well as The second insulating member includes a first insulating region located between the third electrode and the third semiconductor portion in the first direction.
2. The semiconductor device according to claim 1, wherein The crystallinity of the first semiconductor portion is higher than the crystallinity of the third semiconductor portion, or The first semiconductor portion contains crystals, and the third semiconductor portion does not contain crystals.
3. The semiconductor device according to claim 1, wherein The crystallinity of the fourth partial region is higher than the crystallinity of the sixth partial region, or The fourth partial region contains crystals, and the sixth partial region does not contain crystals.
4. The semiconductor device according to claim 1, wherein The first semiconductor portion includes a first side surface facing the first electrode portion, The second semiconductor portion includes a second side surface facing the first electrode portion, A first distance between the first side surface and the second side surface along the second direction is narrower than a first width of at least a portion of the first insulating region along the second direction.
5. The semiconductor device according to claim 1, wherein The first semiconductor component further includes a seventh partial region, The third partial region is located between the seventh partial region and the sixth partial region in the first direction, The second semiconductor component further includes a fourth semiconductor portion, The first electrode portion is located between the fourth semiconductor portion and the third semiconductor portion in the first direction, The second insulating member further includes a second insulating region, The second insulating region is located between the fourth semiconductor portion and the third electrode in the first direction.
6. The semiconductor device according to claim 5, wherein: The crystallinity of the first semiconductor portion is higher than the crystallinity of the fourth semiconductor portion, or The first semiconductor portion contains crystals, and the fourth semiconductor portion does not contain crystals.
7. The semiconductor device according to claim 5, wherein: The first semiconductor portion includes a first side surface facing the first electrode portion, The second semiconductor portion includes a second side surface facing the first electrode portion, A first distance between the first side surface and the second side surface along the second direction is narrower than a second width of at least a portion of the second insulating region along the second direction.
8. The semiconductor device according to claim 1, wherein A plurality of the third electrodes are provided, A plurality of the first insulating regions are provided, A direction from one of the plurality of third electrodes to one of the plurality of first insulating regions is along the first direction, A direction from another electrode among the plurality of third electrodes to another insulating region among the plurality of first insulating regions is along the first direction, In a first plane including the first direction and the second direction, the one insulating region among the plurality of first insulating regions is continuous with the other insulating region among the plurality of first insulating regions.
9. The semiconductor device according to claim 1, wherein: The invention further comprises a first compound member, wherein the first compound member contains Al z1 Ga 1－z1 N, where 0<z1≤1, x2<z1, At least a portion of the first compound member is provided between the third partial region and the first insulating portion, between the first semiconductor portion and the first insulating portion, and between the first insulating portion and the second semiconductor portion.
10. A semiconductor device comprising: a first electrode extending along a first direction; a second electrode extending along the first direction, wherein a second direction from the first electrode to the second electrode intersects the first direction; a third electrode extending along the first direction, wherein the position of the third electrode in the second direction is between the position of the first electrode in the second direction and the position of the second electrode in the second direction, and the third electrode includes a first electrode portion; The first semiconductor member contains Al x1 Ga 1－x1 N, wherein 0≤x1<1, the first semiconductor component includes a first partial region, a second partial region, a third partial region, a fourth partial region, a fifth partial region, a sixth partial region and a seventh partial region, a direction from the first partial region to the first electrode is along a third direction, the third direction intersecting a plane including the first direction and the second direction, a direction from the second partial region to the second electrode is along the third direction, a direction from the third partial region to the first electrode portion is along the third direction, a position of the fourth partial region in the second direction is between a position of the first partial region in the second direction and a position of the third partial region in the second direction, a position of the fifth partial region in the second direction is between the position of the third partial region in the second direction and a position of the second partial region in the second direction, a direction from the third partial region to the sixth partial region is along the first direction, and a direction from the seventh partial region to the sixth partial region is along the second direction; The second semiconductor member contains Al x2 Ga 1－x2 N, wherein 0<x2≤1, x1<x2, the second semiconductor component comprises a first semiconductor portion, a second semiconductor portion and a third semiconductor portion, the direction from the fourth partial region to the first semiconductor portion is along the third direction, the direction from the fifth partial region to the second semiconductor portion is along the third direction, the direction from the seventh partial region to the third semiconductor portion is along the third direction, the first electrode portion is located between the first semiconductor portion and the second semiconductor portion in the second direction, the crystallinity of the first semiconductor portion is higher than the crystallinity of the third semiconductor portion, or the first semiconductor portion contains crystals and the third semiconductor portion does not contain crystals; a first insulating member, comprising a first insulating portion, the first insulating portion being disposed between the third partial region and the first electrode portion, between the first semiconductor portion and the first electrode portion, and between the first electrode portion and the second semiconductor portion; as well as The second insulating member includes a first insulating region located between the third semiconductor portion and the third electrode in the second direction.