Magnetic element, preparation method thereof and electronic equipment

Abstract

The invention belongs to the technical field of magnetic materials, and discloses a magnetic element, a preparation method thereof and electronic equipment. The magnetic element comprises a substrate, a first electrode layer, a regulation and control dielectric layer and a second electrode layer, the regulation and control dielectric layer is located between the first electrode layer and the second electrode layer, the first electrode layer is single-crystal lanthanum strontium manganate, the regulation and control dielectric layer is single-crystal gadolinium-doped cerium dioxide, and the magnetic element has a first magnetic parameter; when a first electric field is applied between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic parameter different from the first magnetic parameter; after the first electric field is removed, the magnetic element has a first magnetic parameter. Through the synergistic effect of the first electrode layer and the regulation and control dielectric layer, magnetic regulation and control of the magnetic element based on an electric field are realized, the magnetic regulation and control have reversibility, and a foundation can be laid for realization of a highly integrated modern memory. The magnetic element also has the beneficial effects of simple structure and easy realization.

Description

Technical Field

[0001] The present invention relates to the technical field of magnetic materials, and in particular to a magnetic element and a preparation method thereof, and electronic equipment. Background Art

[0002] Magnetic materials are the basis of spin storage. Magnetic control is the key technology to realize the transition between signals "0" and "1" in spin storage and logic operators. The most direct way to control the magnetic order is the magnetic field, but the magnetic field depends on the Helmholtz coil, which often requires a large space and current density, and cannot meet the requirements of highly integrated modern memory. In addition to the magnetic field, the electric field is the best way to control the magnetic properties of materials. It can reversibly and non-volatilely control the magnetic structure at very low energy consumption. At the same time, it has a fast response speed and is compatible with traditional semiconductor processes, which can meet the design of small-sized and highly integrated devices.

[0003] Electric fields can regulate the magnetic anisotropy, magnetization, Curie temperature, coercivity, etc. of materials without the assistance of magnetic fields. It is a competitive technology for realizing multi-state storage at extremely low energy consumption. Combining with STT-MRAM, SOT-MRAM or their designs can be one of the trends in shaping the future memory landscape. It will be very meaningful to design efficient devices that can be applied to spin storage based on electric field regulation of magnetism.

[0004] Lanthanum Strontium Manganate La 1-x Sr x MnO3 is a giant magnetoresistance rare earth manganese oxide, which is the product of LaMnO3 doped with divalent element strontium at the A position. Its Curie temperature is about 360K, with a spin polarization rate of more than 95%. Its crystal structure belongs to the perovskite type, which can match the ferroelectric oxide with perovskite structure to prepare highly directional ferroelectric thin film heterojunction and giant magnetoresistance film. When x is between 0 and 0.5, lanthanum strontium manganate is a single-phase orthorhombic perovskite structure. Summary of the invention

[0005] The purpose of the present invention is to provide a magnetic element and a preparation method thereof, and an electronic device, aiming to provide a magnetic element that realizes magnetic regulation based on an electric field.

[0006] To achieve the above object, a first aspect of the present invention provides a magnetic element, the magnetic element comprising:

[0007] substrate;

[0008] The first electrode layer is made of single crystal lanthanum strontium manganate;

[0009] The second electrode layer is made of conductive silicone;

[0010] A regulating medium layer, located between the first electrode layer and the second electrode layer, and made of single-crystalline gadolinium-doped cerium dioxide;

[0011] Wherein, the magnetic element has a first magnetic parameter; when a first electric field is applied between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic parameter different from the first magnetic parameter;

[0012] After the first electric field is removed, the magnetic element has the first magnetic parameter.

[0013] According to some embodiments of the present invention, when the first electric field is applied between the first electrode layer and the second electrode layer, the saturation magnetization of the magnetic element under the first external magnetic field is reduced from the first in-plane saturation magnetization to the second in-plane saturation magnetization, the coercive force of the magnetic element under the first external magnetic field is reduced from the first in-plane coercive force to the second in-plane coercive force, and the difference between the first in-plane saturation magnetization and the second in-plane saturation magnetization is proportional to the intensity of the first electric field;

[0014] Wherein, the magnetic field direction of the first external magnetic field is parallel to the plane of the first electrode layer.

[0015] According to some embodiments of the present invention, when the first electric field is applied between the first electrode layer and the second electrode layer, the saturation magnetization of the magnetic element under the second external magnetic field is reduced from the first out-of-plane saturation magnetization to the second out-of-plane saturation magnetization, the coercive force of the magnetic element under the second external magnetic field is reduced from the second out-of-plane coercive force to the second out-of-plane coercive force, and the difference between the first out-of-plane saturation magnetization and the second out-of-plane saturation magnetization is proportional to the intensity of the first electric field;

[0016] Wherein, the magnetic field direction of the first external magnetic field is perpendicular to the plane of the first electrode layer.

[0017] According to some embodiments of the present invention, when the first electric field is applied between the first electrode layer and the second electrode layer, the magnetic element has a hysteresis loop with lower rectangularity under an external magnetic field perpendicular to or parallel to the plane of the first electrode layer; the greater the intensity of the first electric field, the lower the rectangularity of the hysteresis loop.

[0018] According to some embodiments of the present invention, the substrate is a perovskite material.

[0019] According to some embodiments of the present invention, the substrate is made of strontium titanate or lanthanum strontium aluminum tantalum.

[0020] According to some embodiments of the present invention, the thickness of the regulating medium layer is 30 to 100 nm;

[0021] The thickness of the first electrode layer is 100-300 nm.

[0022] According to some embodiments of the present invention, the first electrode layer is La 1-x S x MnO3, wherein x is 0.1 to 0.5.

[0023] To achieve the above object, the second aspect of the present invention provides a method for preparing the above magnetic element, the method comprising the following steps:

[0024] Step S100: depositing a first electrode layer and a regulating medium layer in sequence on the surface of the substrate;

[0025] Step S200: Leading out a first electrode from the first electrode layer;

[0026] Step S300: attaching conductive silicone to the surface of the regulating medium layer to form a second electrode layer;

[0027] Step S400: extracting a second electrode from the second electrode layer.

[0028] According to some embodiments of the present invention, the deposition method is pulsed laser deposition.

[0029] According to some embodiments of the present invention, the step of extracting the first electrode from the first electrode layer includes:

[0030] A conductive silver paste is coated on the surface of the exposed electrode layer in the first electrode layer, and the first enameled wire is fixed to the exposed electrode layer by the conductive silver paste.

[0031] According to some embodiments of the present invention, the step of extracting the second electrode from the second electrode layer includes:

[0032] Conductive silver paste is coated on the surface of the second electrode layer, and the second enameled wire is fixed to the second electrode layer by the conductive silver paste.

[0033] To achieve the above objective, a third aspect of the present invention provides an electronic device, the electronic device comprising the magnetic element; the magnetic element is the aforementioned magnetic element, or a magnetic element manufactured by the aforementioned manufacturing method.

[0034] Therefore, compared with the prior art, the present invention has the following beneficial effects:

[0035] The magnetic element provided by the present invention includes a substrate, a first electrode layer, a control medium layer and a second electrode layer, wherein the control medium layer is located between the first electrode layer and the second electrode layer, the material of the first electrode layer is single crystal lanthanum strontium manganate, the material of the control medium layer is single crystal gadolinium-doped cerium dioxide, and the magnetic element has a first magnetic parameter; when a first electric field is applied between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic parameter different from the first magnetic parameter; after the first electric field is removed, the magnetic element has the first magnetic parameter. The present invention realizes the magnetic control of the magnetic element based on the electric field through the synergistic effect of the first electrode layer and the control medium layer, and the magnetic control is reversible, which can lay the foundation for the realization of highly integrated modern memory. The magnetic element also has the beneficial effects of simple structure and easy implementation. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0037] Figure 1 is a schematic structural diagram of a magnetic element according to an embodiment of the present invention;

[0038] Figure 2 is a hysteresis loop of the magnetic element of an embodiment of the present invention under an external magnetic field parallel to the plane of the first electrode layer;

[0039] Figure 3 is a hysteresis loop of the magnetic element of an embodiment of the present invention under an external magnetic field perpendicular to the plane of the first electrode layer;

[0040] Figure 4 is a schematic flow chart of a method for preparing a magnetic element according to an embodiment of the present invention;

[0041] Figure 5 A schematic diagram of the structure of a magnetic element in a preparation process according to an embodiment of the present invention;

[0042] Figure 6 is an XRD diffraction pattern of the magnetic element after step S100 of an embodiment of the present invention;

[0043] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0044] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0045] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0046] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of the features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel solutions. Taking "A and / or B" as an example, it includes solution A, solution B, or solutions that satisfy both A and B. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0047] Magnetic materials are the basis of spin storage. Magnetic control is the key technology to realize the transition between signals "0" and "1" in spin storage and logic operators. The most direct way to control magnetic order is the magnetic field, but the magnetic field depends on the Helmholtz coil, which often requires a large space and current density and cannot meet the requirements of highly integrated modern memory. In addition to the magnetic field, the electric field is the best way to control the magnetism of materials. It can reversibly and non-volatilely control the magnetic structure at very low energy consumption. At the same time, it has a fast response speed and is compatible with traditional semiconductor processes, which can meet the design of small-sized and highly integrated devices.

[0048] Electric fields can regulate the magnetic anisotropy, magnetization, Curie temperature, coercivity, etc. of materials without the assistance of magnetic fields. It is a competitive technology for realizing multi-state storage at extremely low energy consumption. Combining with STT-MRAM, SOT-MRAM or their designs can be one of the trends in shaping the future memory landscape. It will be very meaningful to design efficient devices that can be applied to spin storage based on electric field regulation of magnetism.

[0049] An embodiment of the present invention provides a magnetic element, which can regulate magnetism based on an electric field.

[0050] Specifically, Figure 1 As shown, the magnetic element of the embodiment of the present invention includes a substrate and a first electrode layer, a control medium layer and a second electrode layer deposited on the substrate. The control medium layer is located between the first electrode layer and the second electrode layer. The magnetic element has a first magnetic parameter; when a first electric field is applied between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic parameter different from the first magnetic parameter; after the first electric field is removed, the magnetic element returns to having the first magnetic parameter.

[0051] It should be understood that the intensity of the first electric field should be higher than a predetermined intensity.

[0052] The first electrode layer of the embodiment of the present invention is single crystal lanthanum strontium manganate, which is a magnetic material and an electrode material at the same time. The thickness of the first electrode layer is 100 nm.

[0053] The thickness of the first electrode layer is not limited to 100 nm, and can be any value between 30 nm and 100 nm.

[0054] The chemical formula of the lanthanum strontium manganate in the embodiment of the present invention is: La 1-x Sr x MnO3 is a giant magnetoresistive rare earth manganese oxide, which is the product of A-site doping of lanthanum manganate LaMnO3 with divalent element strontium. It has a Curie temperature of about 360K, a spin polarization rate of more than 95%, and a perovskite crystal structure. It can match the ferroelectric oxide of the perovskite structure to prepare a highly directional ferroelectric thin film heterojunction and a giant magnetoresistive film. In the chemical formula of lanthanum strontium manganate in the embodiment of the present invention, x is 0.33.

[0055] It should be noted that x is not limited to 0.33, and can be any value between 0 and 0.5.

[0056] The control medium layer of the embodiment of the present invention is single crystal gadolinium-doped cerium dioxide with a thickness of 300 nm.

[0057] The thickness of the control medium layer in the embodiment of the present invention is not limited to 300 nm, and can be any value between 100 nm and 300 nm, which is not specifically limited here.

[0058] Among them, cerium dioxide belongs to the cubic fluorite structure and is a typical wide-bandgap oxide semiconductor. Its lattice parameters match those of Si and is often regarded by researchers as a potential replacement for Si semiconductors. Undoped cerium dioxide has a certain concentration of oxygen vacancies, but does not show macroscopic ferromagnetism. However, it can show ferromagnetism through doping. For example, cerium dioxide nanoparticles doped with cobalt ions show obvious room-temperature ferromagnetism, and their saturation magnetization first increases and then decreases with the increase of cobalt ion doping concentration; after doping a small amount of nickel particles into cerium oxide nanoparticles, cerium oxide nanoparticles also have obvious room-temperature ferromagnetism; doping iron particles into cerium oxide nanoparticles will cause nano-cerium dioxide samples to show obvious room-temperature ferromagnetism.

[0059] The doping amount of gadolinium in the embodiment of the present invention is 20%.

[0060] It should be noted that the doping amount of gadolinium in the control medium layer is not limited to 20%, and may also be other doping amounts, which are not specifically limited here.

[0061] In the embodiment of the present invention, the magnetic element obtained by sequentially depositing lanthanum strontium manganate and gadolinium-doped cerium dioxide on a substrate is ferromagnetic under the action of an external magnetic field perpendicular to or parallel to the plane of the first electrode layer, and is magnetically controllable under the action of an electric field.

[0062] Under the action of an external magnetic field parallel to the plane of the first electrode layer, the magnetic element of the embodiment of the present invention has a first in-plane magnetization and a first in-plane coercive force; when a first electric field is applied between the first electrode layer and the second electrode layer, the saturation magnetization of the magnetic element decreases from the first in-plane saturation magnetization to the second in-plane saturation magnetization, and the coercive force of the magnetic element decreases from the first in-plane coercive force to the second in-plane coercive force. At the same time, the greater the electric field strength of the first electric field, the greater the difference between the first in-plane saturation magnetization and the second in-plane saturation magnetization.

[0063] Under the action of an external magnetic field perpendicular to the first electrode layer, the magnetic element of the embodiment of the present invention has a first out-of-plane magnetization and a first out-of-plane coercive force; and when a first electric field is applied between the first electrode layer and the second electrode layer, the saturation magnetization of the magnetic element decreases from the first out-of-plane saturation magnetization to the second out-of-plane saturation magnetization, and the coercive force of the magnetic element decreases from the first out-of-plane coercive force to the second out-of-plane coercive force. At the same time, the greater the electric field strength of the first electric field, the greater the difference between the first out-of-plane saturation magnetization and the second out-of-plane saturation magnetization.

[0064] Under the action of an external magnetic field perpendicular or parallel to the first electrode layer, the magnetic element of an embodiment of the present invention has a first magnetization curve; when a first electric field is applied between the first electrode layer and the second base layer, the magnetization curve of the magnetic element is converted from the first hysteresis loop to a second hysteresis loop different from the first hysteresis loop; and the second hysteresis loop has a lower rectangularity than the first hysteresis loop.

[0065] In order to verify the magnetic control effect based on the electric field of the magnetic element of the embodiment of the present invention, the following test is performed:

[0066] (1) applying a first external magnetic field parallel to the plane of the first electrode layer to the magnetic element, and measuring the hysteresis loop of the magnetic element in the first external magnetic field; applying a second external magnetic field perpendicular to the plane of the first electrode layer to the magnetic element, and measuring the hysteresis loop of the magnetic element in the second external magnetic field;

[0067] (2) applying an electric field of 21 V between the first electrode layer and the second electrode layer, applying a first external magnetic field parallel to the plane of the first electrode layer to the magnetic element, and measuring the hysteresis loop of the magnetic element when the electric field and the first external magnetic field are applied; applying a second external magnetic field perpendicular to the plane of the first electrode layer to the magnetic element, and measuring the hysteresis loop of the magnetic element when the electric field and the second external magnetic field are applied;

[0068] (3) applying an electric field of 30 V between the first electrode layer and the second electrode layer, applying a first external magnetic field parallel to the plane of the first electrode layer to the magnetic element, and measuring the hysteresis loop of the magnetic element when the electric field and the first external magnetic field are applied; applying a second external magnetic field perpendicular to the plane of the first electrode layer to the magnetic element, and measuring the hysteresis loop of the magnetic element when the electric field and the second external magnetic field are applied;

[0069] (4) applying an electric field of 35 V between the first electrode layer and the second electrode layer, applying a first external magnetic field parallel to the plane of the first electrode layer to the magnetic element, and measuring the hysteresis loop of the magnetic element when the electric field and the first external magnetic field are applied; applying a second external magnetic field perpendicular to the plane of the first electrode layer to the magnetic element, and measuring the hysteresis loop of the magnetic element when the electric field and the second external magnetic field are applied;

[0070] (5) The electric field is removed, and a first external magnetic field parallel to the plane of the first electrode layer is applied to the magnetic element, and the hysteresis loop of the magnetic element is measured when the electric field is removed and the first external magnetic field is applied; a second external magnetic field perpendicular to the plane of the first electrode layer is applied to the magnetic element, and the hysteresis loop of the magnetic element is measured when the electric field is removed and the second external magnetic field is applied.

[0071] in accordance with Figure 2When a first external magnetic field parallel to the plane of the first electrode layer is applied to the magnetic element, the hysteresis loop of the magnetic element changes with the intensity of the applied electric field. When electric fields of 21V, 30V, and 35V are applied, the hysteresis loop tends to a lower rectangularity; and the greater the intensity of the electric field, the lower its rectangularity, the lower the saturation magnetization, and the lower the coercive force, indicating that the magnetic element of the present invention can achieve in-plane magnetic regulation through an electric field. At the same time, when the electric field is withdrawn, the hysteresis loop of the magnetic element basically coincides with the hysteresis loop of the magnetic element before the electric field is applied, indicating that the in-plane magnetic regulation achieved by the electric field of the magnetic element of the embodiment of the present invention is reversible.

[0072] in accordance with Figure 3 When a second external magnetic field perpendicular to the plane of the first electrode layer is applied to the magnetic element, the hysteresis loop of the magnetic element changes with the intensity of the applied electric field. When an electric field of 21V, 30V, and 35V is applied, the hysteresis loop tends to a lower rectangularity; and the greater the intensity of the electric field, the lower its rectangularity, the lower the saturation magnetization, and the lower the coercive force, indicating that the magnetic element of the present invention can achieve in-plane magnetic regulation through an electric field. At the same time, when the electric field is withdrawn, the hysteresis loop of the magnetic element basically coincides with the hysteresis loop of the magnetic element before the electric field is applied, indicating that the out-of-plane magnetic regulation achieved by the electric field of the magnetic element of the embodiment of the present invention is reversible.

[0073] Therefore, the magnetic element of the embodiment of the present invention realizes the magnetic control of the magnetic element based on the electric field through the synergistic effect of the first electrode layer and the control medium layer, and the magnetic control is reversible, and the magnetic field can be an in-plane or out-of-plane magnetic field, which can lay the foundation for the realization of highly integrated modern memory. The magnetic element has the beneficial effects of simple structure and easy realization.

[0074] The substrate of the magnetic element in the embodiment of the present invention is made of a perovskite material, which is strontium titanate.

[0075] It should be noted that the substrate may also be made of other perovskite materials, such as lanthanum strontium aluminum tantalum, and is not limited to strontium titanate.

[0076] In another embodiment of the magnetic element of the present invention, the thickness of the regulating medium layer is reduced from 300nm to 100nm. Similarly, an electric field is applied between the first electrode layer and the second electrode layer in the magnetic element to test the change of its hysteresis loop. It is found through measurement that under a lower electric field, the in-plane and out-of-plane hysteresis loops of the magnetic element have obvious changes, and the hysteresis loop also has a lower rectangularity, a lower saturation magnetization intensity and a lower coercive force.

[0077] The embodiment of the present invention also provides a method for preparing a magnetic element. The magnetic element is the magnetic element mentioned above.

[0078] like Figure 4-5 As shown, the method for preparing a magnetic element according to an embodiment of the present invention comprises the following steps:

[0079] Step S100: depositing a first electrode layer and a regulating medium layer in sequence on the surface of the substrate;

[0080] Specifically, it includes:

[0081] (1) Substrate cleaning

[0082] A strontium titanate STO (001) substrate with a size of 5 mm × 5 mm × 0.5 mm was cleaned with alcohol, acetone, and alcohol ultrasonic cleaning for 5 min in sequence, and nitrogen was used to blow dry the residual liquid on the surface of the substrate.

[0083] It should be noted that the size is not limited to 5 mm×5 mm×0.5 mm, and the cleaning time is not limited to 5 minutes. There is no specific limitation.

[0084] (2) The cleaned substrate is pasted on a hot plate of a pulsed laser deposition system with a conductive silver paste, heated at 120° C. for 5 min for drying, and then the hot plate is placed in the pulsed laser deposition system;

[0085] (3) Use mechanical pump and molecular pump to evacuate in sequence. When the vacuum degree is lower than 8×10 -4 Turn on the heating module at pa, set the temperature to 800°C, and the heating rate to 20°C / min;

[0086] (4) After the temperature is heated to 800°C, close the molecular pump valve, open the mechanical pump valve, open the oxygen valve, and adjust the oxygen pressure to 30Pa;

[0087] (5) Adjust the optical path, turn on the target rotation, turn on the laser, and pre-sputter the LSMO target at a frequency of 5 Hz for 5 min. The laser power is 1.4 W / cm 2 ;

[0088] (6) Open the baffle and start growing LSMO film, laser frequency 2 Hz, growth time 70 min;

[0089] It should be noted that the growth time is related to the required LSMO thickness and is not specifically limited.

[0090] (7) The temperature was lowered to 700 °C, the oxygen pressure was adjusted to 10 Pa, the baffle was closed, the gadolinium-doped ceria GCO target was replaced, and the GCO target was pre-sputtered at a frequency of 5 Hz for 5 min with a laser power of 1.4 W / cm2;

[0091] (8) Open the baffle and start growing the GCO film, the laser frequency is 3 Hz, and the growth time is 100 min;

[0092] It should be noted that the growth time is related to the required thickness of the GCO thin film and is not specifically limited.

[0093] (9) After the growth is completed, the oxygen pressure is maintained and in-situ annealing is performed for 10 min. After the growth is completed, the temperature is lowered to 500 °C at a rate of 10 °C / min, and then naturally cooled.

[0094] The thickness of the single crystal magnetic oxide film grown under the above conditions is 100 nm, and the thickness of the control dielectric layer is 300 nm.

[0095] The XRD diffraction pattern of the magnetic element obtained in this step is as follows Figure 4 As shown. Figure 4 The magnetic element only includes lanthanum strontium manganate LSMO, gadolinium-doped cerium dioxide GCO, and strontium titanate STO.

[0096] Step S200: Leading out a first electrode from the first electrode layer;

[0097] Specifically, the method includes: using sandpaper to polish the GCO film to expose part of the LSMO film; removing dust particles on the surface of the exposed LSMO film, and then applying conductive silver paste on the surface of the exposed LSMO film; using sandpaper to polish both ends of the first enameled wire, and using conductive silver paste to fix one end of the enameled wire to the LSMO surface. The first enameled wire can be used as a first electrode lead-out

[0098] Step S300: attaching conductive silicone to the surface of the regulating medium layer to form a second electrode layer;

[0099] Specifically, the conductive silicone film is cut into the size of the regulating dielectric layer; the cut conductive silicone film is attached to the surface of the GCO film, while ensuring that the conductive silicone film does not contact the conductive silver paste.

[0100] Step S400: extracting a second electrode from the second electrode layer.

[0101] Conductive silver paste is applied on the surface of the conductive silicone film; both ends of the second enameled wire are polished with sandpaper, and one end of the second enameled wire is fixed to the surface of the GCO film with conductive silver paste.

[0102] The second enameled wire can be led out as a first electrode.

[0103] The magnetic element of the embodiment of the present invention can be electrically connected to the positive and negative electrodes of the power supply KE6517B through the first enameled wire and the second enameled wire, and a DC power supply is applied to the first electrode layer and the second electrode layer to impart an electric field of a certain strength.

[0104] The magnetic element prepared by the preparation method of the embodiment of the present invention has different hysteresis loops, magnetic saturation intensity, and coercive force in the magnetic field when an electric field is applied to the first electrode layer and the second electrode layer, that is, different magnetic properties. Therefore, the magnetic element of the embodiment of the present invention realizes magnetic regulation based on the electric field.

[0105] An embodiment of the present invention further provides an electronic device, which includes the magnetic element mentioned above or the magnetic element manufactured by the above manufacturing method.

[0106] The magnetic element has the technical features of the aforementioned magnetic element, so they will not be described in detail.

[0107] The above description is only an exemplary embodiment of the present invention, and does not limit the patent scope of the present invention. All equivalent structural changes made by using the contents of the present invention specification and drawings under the technical concept of the present invention, or directly / indirectly applied in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. A magnetic element, characterized in that: include: substrate; The first electrode layer is made of single crystal lanthanum strontium manganate; The second electrode layer is made of conductive silicone; A regulating medium layer, located between the first electrode layer and the second electrode layer, and made of single-crystalline gadolinium-doped cerium dioxide; Wherein, the magnetic element has a first magnetic parameter; when a first electric field is applied between the first electrode layer and the second electrode layer, the magnetic element has a second magnetic parameter different from the first magnetic parameter; After the first electric field is removed, the magnetic element has the first magnetic parameter.

2. The magnetic element according to claim 1, characterized in that: When the first electric field is applied between the first electrode layer and the second electrode layer, the saturation magnetization of the magnetic element under the first external magnetic field decreases from the first in-plane saturation magnetization to the second in-plane saturation magnetization, the coercive force of the magnetic element under the first external magnetic field decreases from the first in-plane coercive force to the second in-plane coercive force, and the difference between the first in-plane saturation magnetization and the second in-plane saturation magnetization is proportional to the intensity of the first electric field; Wherein, the magnetic field direction of the first external magnetic field is parallel to the plane of the first electrode layer.

3. The magnetic element according to claim 1, characterized in that: When the first electric field is applied between the first electrode layer and the second electrode layer, the saturation magnetization of the magnetic element under the second external magnetic field decreases from the first out-of-plane saturation magnetization to the second out-of-plane saturation magnetization, the coercive force of the magnetic element under the second external magnetic field decreases from the second out-of-plane coercive force to the second out-of-plane coercive force, and the difference between the first out-of-plane saturation magnetization and the second out-of-plane saturation magnetization is proportional to the intensity of the first electric field; Wherein, the magnetic field direction of the first external magnetic field is perpendicular to the plane of the first electrode layer.

4. The magnetic element according to claim 1, characterized in that: When the first electric field is applied between the first electrode layer and the second electrode layer, the magnetic element has a hysteresis loop with lower rectangularity under an external magnetic field perpendicular to or parallel to the plane of the first electrode layer; the greater the intensity of the first electric field, the lower the rectangularity of the hysteresis loop.

5. The magnetic element according to any one of claims 1 to 4, characterized in that: The substrate is a perovskite material; preferably, the substrate is made of strontium titanate or lanthanum strontium aluminum tantalum.

6. The magnetic element according to any one of claims 1 to 4, characterized in that: The thickness of the regulating medium layer is 30 to 100 nm; The thickness of the first electrode layer is 100-300 nm.

7. The magnetic element according to any one of claims 1 to 4, characterized in that: The first electrode layer is La 1- x S x MnO3, wherein x is 0.1 to 0.

5.

8. The method for preparing a magnetic element according to any one of claims 1 to 7, characterized in that: The following steps are involved: Depositing a first electrode layer and a regulating medium layer in sequence on the surface of the substrate; Leading out a first electrode from the first electrode layer; Attaching conductive silicone to the surface of the regulating medium layer to form a second electrode layer; A second electrode is led out from the second electrode layer.

9. The preparation method according to claim 8, characterized in that: The deposition method is pulsed laser deposition; And / or, the step of extracting the first electrode from the first electrode layer comprises: Coating a conductive silver paste on the surface of the exposed electrode layer in the first electrode layer, and fixing the first enameled wire to the exposed electrode layer by the conductive silver paste; And / or, the step of extracting the second electrode from the second electrode layer comprises: Conductive silver paste is coated on the surface of the second electrode layer, and the second enameled wire is fixed to the second electrode layer by the conductive silver paste.

10. An electronic device, characterized in that: comprising the magnetic element; The magnetic element is the magnetic element described in any one of claims 1 to 7, or a magnetic element prepared by the preparation method described in claim 8 or 9.

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