Electrical device and method for constructing an electrical device

Abstract

The invention relates to an electrical device having at least one circuit carrier which comprises a carrier substrate made of an electrically insulating material. In this case, an electrical conductor structure having structural regions is formed on at least one outer surface of the circuit carrier, which structural regions are electrically insulated from one another by a first insulating structure formed from an insulating material supporting the substrate. A dam-like second insulating structure is then arranged at least partially on the first insulating structure, which second insulating structure surrounds at least one electrically insulating structural region and / or at least one component of at least two adjacent electrically insulating structural regions of the conductor structure by means of a respectively closed dam profile. In this case, the extended second insulating structure protrudes beyond the surface of the at least one or more surrounded structural regions on the side of the outer surface of the circuit carrier.

Description

Technical Field

[0001] The invention relates to an electrical device and a method for constructing an electrical device according to the preambles of the independent claims. Background Art

[0002] In electrical equipment, there is a risk of fire in the event of a fault. In particular, a fire can occur if sparks are formed due to a short circuit or voltage breakdown in the electrical equipment.

[0003] Due to a possible fire, there is a risk not only of complete destruction of the electrical installation, but also of direct harm to the environment, for example buildings, vehicles or even human life.

[0004] In order to avoid this fire risk, also known as NoTi (No Thermal Incident), the relevant standards, such as ISO 26262, DIN EN 60664-1 (January 2008), DIN EN 606 64-5 (May 2008), EN 50124-1, EN 60112, must be taken into account when developing electrical devices. Electronic devices are usually tested for their NoTi robustness by the electronics developers and are classified into so-called NoTi classes. In addition to these standards, internal guidelines are usually created, for example with regard to the use of own design elements for assembly and connection technology.

[0005] Usually, sufficient NoTi robustness is provided on the outer layer of the circuit carrier by the distance between the different potentials, so that no electrical breakdown can be formed by conductive particles or closed water films. However, in high-voltage applications, large distances are already required, which are difficult or impossible to achieve due to economic reasons and in view of the compact structure. The distance can still be shortened by applying specific insulating coatings in a covering manner on the corresponding dangerous areas with high potential. However, such coatings extend in an undefined manner in the lateral direction, so that no clearly delimited edge areas are formed. In addition, it must be taken into account that adjacent areas are not accidentally contaminated by the coating material. Another possibility is to completely encapsulate the electrical device in a viscous insulating protective material (direct encapsulation). For this purpose, different molding materials are suitable, for example, which cover the electrical device over a large area by corresponding known molding processes. Also known is the possibility of a "dam and fill process", in which the insulating material is usually first applied in a distributed manner on the circuit carrier in the form of a dam around the edge side. The wall formed in this process serves as a filling form for the further potting compound, which covers the entire electronic circuit at least in the area up to the applied wall.

[0006] In principle, however, such a flat covering could have the potential to create a harmful microclimate beneath the packaging material, as a result of which the electronic circuits could be damaged, for example, by corrosion processes. Summary of the invention

[0007] The object of the present invention is to provide a high NoTi robustness of an electrical device, in particular in high-voltage applications.

[0008] This object is achieved by an electrical device and a method for constructing the electrical device having the characterizing features of the independent claims.

[0009] It is assumed that the electrical device has at least one circuit carrier, which includes a carrier substrate composed of an electrically insulating material. Here, an electrical conductor structure with structural regions is formed on at least one outer surface of the circuit carrier, and these structural regions are electrically insulated from each other by a first insulating structure made of the insulating material of the carrier substrate. A dam-shaped second insulating structure is then at least partially arranged on the first insulating structure, and the second insulating structure uses a respectively closed dam to wrap around at least one electrically insulating structural region of the conductor structure and / or at least one component of at least two adjacent electrically insulating structural regions. Here, the second insulating structure thus extended protrudes above the surface of at least one or more wrapped and surrounded structural regions on the side of the outer surface of the circuit carrier. Therefore, the second insulating structure forms a mechanical protector wall for the structural region surrounded in a closed and wrapped manner. The conductive dielectric film reaching the outer surface of the circuit carrier is separated by the protruding second insulating structure at the corresponding relevant position, and thus prevents the formation of a planar continuous dielectric film. It is advantageously achieved by the mandatory separation thus obtained that a short circuit is prohibited in the simplest way between the structural regions of the conductor structure that guide two different potentials, which is otherwise triggered by bridging different potential surfaces through dielectric films spread on the surface. Due to the dam-shaped embodiment, very large amounts of medium can also be prevented from flowing further here by means of the basin-shaped medium receiving portion and / or by means of the wall-shaped barrier, depending on the protruding structure height. Since there is no large-area coverage of the structure area that is otherwise provided due to the second insulating structure, no harmful microclimate will occur locally. The separated or retained dielectric film can completely escape again in another way, for example by an evaporation process, during the exchange with the atmosphere, without causing damage to the electronic circuits of the electrical device. The potential surface on the first insulating structure for arranging the second insulating structure is generated in particular as a negative surface exposed on the outer surface of the circuit carrier for arranging the conductor structure, the negative surface being formed by the insulating material of the first insulating structure.

[0010] Therefore, the dam-shaped embodiment of the second insulating structure includes a linear direction of the second insulating structure along a curved track defined on the first insulating structure. In this regard, the common direct packaging or dimming and filling (Dim & Fill) is simplified to a linear packaging of the circuit carrier and is carried out in a specific application between potential surfaces with a risk of breakdown. In the structural area surrounded in a closed and wrapped manner, the second insulating structure extends along a curved track adapted to the edge direction of a structural area. In a component surrounded in a closed and wrapped manner with at least two structural areas, the curved track is adapted to the envelope curve surrounding the structural area. In this regard, the structural area in the component has a surface of the first insulating structure exposed to the outer surface of the circuit carrier, and the second insulating structure is not arranged there. The second insulating structure is also effective relative to the conductive particles, which can now only be arranged on one side of the second insulating structure on the circuit carrier. Therefore, its bridging possibility on the now separated structural area is prohibited, so that there is no short circuit here either.

[0011] The electrical device according to the invention can be advantageously developed and improved by the measures listed in the dependent claims.

[0012] In a particularly advantageous embodiment of the electrical device, at least one structural region surrounded in a closed manner or at least one component of at least two structural regions surrounded in a closed manner is configured as a high-voltage region of the electrical device, preferably a high-voltage region of >400V, in particular a high-voltage region of >600V, for example a high-voltage region of >800V. High voltages just have the risk of voltage breakdown between the surfaces of the conducting potential, which risk is eliminated for the spark discharge gap to be formed by overcoming the additional protruding insulation barrier of the second insulating structure form. In this regard, electrical devices in the high-voltage region, such as power modules, inverters, etc., can be advantageously implemented in a NoTi-safe manner.

[0013] An advantageous embodiment of the electrical device is implemented such that the second insulating structure protrudes from the surface by 1-10 mm, preferably 1.5-6 mm, at least in the region of at least one structural region surrounded in a closed manner and / or at least one component of at least two structural regions surrounded in a closed manner. By extending the creepage distance for possible voltage breakdown as the dam height increases, the insulation requirements for preventing voltage breakdown and / or short circuits can be reliably met in a wide potential region to be separated despite the presence of high potentials.

[0014] If, for example, the second insulating structure is realized by an application method, then it can also be embodied in multiple layers in the height and / or width direction.

[0015] A further advantage results from the fact that embodiments of the electrical device can be realized in which the minimum distance between at least one structural region enclosed in a closed manner and / or at least one component enclosed in a closed manner of at least two structural regions and the nearest adjacent structural region is <=7 mm, preferably <=5 mm, in particular <=3.5 mm. Minimization can be particularly successful with increasing dam height and / or dam width of the insulating material of the first and / or second insulating structure and / or increasing dielectric strength. Electrical devices in the high power and / or high voltage region can be implemented very compactly in this way.

[0016] In addition, very favorable conditions are provided for the following embodiments of the electrical device, in which the second insulating structure extends to at least one structural area surrounded in a closed manner and / or at least one or all structural areas of at least one component surrounded in a closed manner of at least two structural areas and / or at least one, in particular all nearest adjacent structural areas of at least one structural area of ​​the structural areas surrounded in a closed manner. Therefore, advantageously, the surface of the first insulating structure exposed between the structural areas to be separated on the outer surface of the circuit carrier can be flexibly partially or completely covered by the arranged second insulating structure. In this way, as the dam width increases until the maximum structural area is reached, the insulating effect of the second insulating structure is fully amplified or maximized. Further advantageously, at least the structural area surrounded in a closed manner can be exposed using its entire surface. Therefore, especially in the case of contact pads, the heat dissipation capacity and / or contactability can be kept very high, for example.

[0017] In an optional embodiment of the electrical device, the second insulating structure covers the edge area of ​​at least one or all of the structural areas surrounded in a closed and wrapped manner and / or at least one or all of the structural areas closest to it in a planar manner. Here, the covering width of the edge contour of the corresponding structural area is preferably up to at least 1 mm, more preferably up to 2 mm. Therefore, there is flexibility to further improve the insulation effect when necessary while maintaining a compact structural mode of the electrical device.

[0018] Additional advantages are provided in the following embodiment of the electrical device, in which the carrier substrate is aligned flat on the side facing the conductor structure, and the nearest adjacent structure areas are arranged on the carrier substrate side in a manner spaced apart from each other by means of grooves extending to the carrier substrate side. Here, the second insulating structure then extends on the corresponding section in the corresponding groove, which is adjacent to at least one structure area of ​​the structure area surrounded in a closed and wrapped manner. Advantageously, different, especially flat substrate types or circuit carriers can be used without influencing and / or changing their known manufacturing processes, the circuit carriers are especially DBC (direct bonded copper), AMB (active metal brazing), IMS (insulated metal substrate), LTCC (low temperature co-fired ceramic), HTCC (high temperature co-fired ceramic) circuit carriers or printed circuit boards of the FR4 type, for example. Overall, the creepage path is advantageously further extended here, because the dam height of the second insulating structure is also additionally increased by the groove depth.

[0019] The following alternative embodiments of the circuit carrier are also conceivable, in which the outer conductor structure is also embedded in the carrier substrate at least partially or until it is aligned with the carrier substrate with its outermost structure surface. In these cases, the groove is partially to completely filled with the insulating material of the first insulating structure.

[0020] In general, an advantageous alternative embodiment of the electrical device is that in the region of at least one structure region which is closest to the edge section of the circuit carrier, the second insulating structure opens into two edge section points which are spaced apart from one another. In these cases, the edge region locally has a first insulating structure which spaces the at least one structure region which is closest to the edge of the circuit carrier. Advantageously, the design of the first insulating structure is sufficient, for example in terms of value, to meet the required insulation specifications.

[0021] The following embodiment of the electrical device is preferred, in which at least one of the structure areas surrounded in a closed, wrapped manner extends to a distance of less than 7 mm, preferably less than 5 mm, in particular less than 3 mm from the edge section of the circuit carrier. In this case, the corresponding subsection of the second insulating structure extends to this edge section of the circuit carrier and / or protrudes from this edge section. The protrusion can be configured here in particular with a protrusion size of up to 10 mm, for example up to 5 mm. Preferably, the second insulating structure at least partially covers the end face of the circuit carrier following the mentioned edge section. This results in the great advantage that the outer surface of the circuit carrier can be used to the maximum extent for the wiring function, thereby saving costs and structural space.

[0022] Generally, if in the already described embodiments of the electrical device, the second insulating structure is a cured injection molded structure or a cured distribution structure, some advantages are produced in these embodiments. The injection molded structure is constructed as a die (Abformung) of a mold. Injectable molding compounds are particularly suitable as materials. The distribution structure is constructed in the form of a single-layer or multi-layer distribution strip (Dispensraupe). In particular, dispensable insulating polymer materials can be used here. In particular, epoxy materials are suitable as injectable or dispensable insulating materials. Advantageously, the second insulating structure can be constructed in a method known in addition. In addition, circuit carriers with different insulations so far do not require any special adaptation or complex redesign to be realized using a simple second insulating structure.

[0023] An embodiment of the electrical device is preferred such that the second insulating structure has a plurality of closed surrounding structural regions and / or a closed surrounding assembly of at least two structural regions, in particular adjacent to each other in the structural composite. In a top view, the second insulating structure resembles an irregular honeycomb structure, wherein the individual honeycombs are, for example, larger or smaller, respectively surround only one or more structural regions in a closed surrounding manner, have similar or completely different contour runs, are formed identically or differently in their dam heights and / or widths, are adjacent to each other or spaced apart from each other, etc. Thus, depending on the application, the second insulating structure can very flexibly follow the desired run pattern.

[0024] An advantageous embodiment of the electrical device is that the second insulating structures respectively surround at least one structural region or components of at least two structural regions and at least one further structural region or further components of at least two structural regions in a mutually nested manner. In particular, the individual high-voltage connections can be electrically insulated very effectively and safely in this manner.

[0025] In general, there is optionally an embodiment of the electrical device in which the conductor structure is connected to at least one electrical component. The electrical component in turn has a contact region, which includes a plurality of connection contacts with a fine pitch. Here, the conductor structure and the connection contacts of the electrical component are then at least partially, in particular completely, covered by an insulating material in the contact region. For this purpose, preferably, an insulating material forming a second insulating structure can be used. In particular, advantageous combination possibilities with planar coverage are shown only in regions where very fine conductive structures can be electrically insulated from one another.

[0026] The invention further relates to a method for constructing an electrical device, in particular according to at least one of the above-described embodiments, the method comprising the following method steps:

[0027] a) providing at least one circuit carrier comprising a carrier substrate made of an electrically insulating material, wherein electrical conductor structures are formed on at least one outer surface of the circuit carrier, the electrical conductor structures having structure regions electrically insulated from one another by first insulating structures formed from the insulating material of the carrier substrate,

[0028] b) A dam-shaped second insulating structure is at least partially arranged on the first insulating structure, wherein at least one electrically insulating structural area of ​​the conductor structure and / or at least one component of at least two adjacent electrically insulating structural areas are surrounded by a respectively closed dam path, so that on the side of the outer surface of the circuit carrier, the second insulating structure protrudes respectively beyond the surface of at least one or more surrounded structural areas.

[0029] In an advantageous embodiment of the method, the insulating structure is configured as a dispensing strip to which at least a single layer is applied by means of a dispensing process or as a stamp of an injection mold by means of an injection molding process, in particular transfer molding or direct injection molding. In the case of dispensing, the dispensing strip is formed by corresponding movement and metering of the dispensing device. In the case of injection molding, the circuit carrier is arranged in a closed mold, wherein the mold has a shaped part complementary to the second insulating structure. The shaped part is closed by the mold being located on the outer surface of the circuit carrier to form a hollow space, which is filled by injecting molten injection molding material. Demolding of the mold can be achieved by solidification of the injection molding material.

[0030] It is generally advantageous if the second insulating structure can be formed before the conductor structure is electrically contacted with the at least one electrical component.

[0031] The same advantages as those already listed for the device according to the invention may be mentioned for the method according to the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Further advantages, features and details of the invention are apparent from the following description of preferred exemplary embodiments and with reference to the accompanying drawings.

[0033] Figure 1 An exemplary embodiment of an electrical device is shown in a perspective view, the electrical device comprising structural regions which are electrically insulated from one another by a first insulating structure and a second insulating structure arranged on the first insulating structure,

[0034] Figure 2 Shows Figure 1 A cross-sectional view schematically shows a cross section of a structure region and a first insulating structure and a second insulating structure in an exemplary cutting plane of the electrical device.

[0035] In the figures, components with the same function are respectively denoted by the same reference numerals. DETAILED DESCRIPTION

[0036] Figure 1 An exemplary embodiment of an electrical device 100 is shown in a slightly perspective illustration. For simplification, the electrical structural element 90 is hidden, so that in principle only the circuit carrier 10 included by the electrical device 100 in an unassembled state is shown. Here, the circuit carrier 10 comprises a carrier substrate 11 formed by an electrically insulating material 12. In the present embodiment, the carrier substrate 11 has flat substrate surfaces 11a, 11b on both sides. A conductor structure 15 is arranged at least on the substrate surfaces 11a, 11b, preferably on both sides of the carrier substrate 11, and the conductor structure forms the circuit of the electrical device 100 in combination with the electrical structural element 90. The conductor structure 15 comprises different structure areas 16 separated from each other, which are electrically insulated from each other by the insulating material 12 of the carrier substrate 11. Therefore, at least one substrate surface 11a, 11b on which the structure area 16 is arranged represents a first insulating structure 11.1 for electrically insulating the structure area.

[0037] Depending on the type of circuit carrier 10 used, the insulating material 12 of the carrier substrate 11 is formed, for example, from ceramic, polymer material or other materials. Suitable circuit carriers 10 are, for example, DBC (direct bonded copper), AMB (active metal brazing), IMS (insulated metal substrate), LTCC (low temperature co-fired ceramic), HTCC (high temperature co-fired ceramic) circuit carriers or printed circuit boards, for example of the FR4 type. Depending on the type of circuit carrier 10, further electrical conductor structures 15 can also be arranged in the inner layer, which are electrically connected to each other, for example by through-holes, by means of conductor structures 15 or structure areas 16 formed on the outer surface of the circuit carrier 10 according to the circuit diagram.

[0038] In the top view of the outer surface of the circuit carrier 10, the parts of the substrate surfaces 11a, 11b which are not covered by the structured region 16 can be seen (this can also be seen in FIG. Figure 11 ), which portion thus represents the surface of the first insulating structure 11.1 that is exposed relative to the outer surface of the circuit carrier 10. The shape of the exposed surface of the first insulating structure 11.1 is produced complementary to the edge direction of the structure region 16. A second insulating structure 11.2 formed of an electrically insulating material 13 is constructed on a part of this exposed surface of the first insulating structure 11.1. The second insulating structure 11.2 here follows the shape of the exposed surface of the first insulating structure 11.1. The second insulating structure 11.2 here has, for example, a path section 11.2a, by which the individual structure regions 16, 16.a1 that are already electrically insulated from the first insulating structure 11.1 are closedly surrounded. In the present embodiment, the individual structure regions 16, 16.a1 that are thus closedly surrounded are adjacent to the edge section 10.a of the circuit carrier 10, so that the path section 11.2a also extends along this edge section 10.a. However, it is also possible to surround individual structure regions 16 in a closed manner in the same way, which only adjoin other structure regions 16 on all sides, i.e. not adjoin the edge section of the circuit carrier 10. Alternatively or additionally, a component of at least two directly adjacent structure regions 16 is surrounded in a closed manner by the corresponding run sections 11.2b, 11.2c of the second insulating structure 11.2. In the present embodiment, the first component is designed as a closed structure assembly B of two adjacent structure regions 16.b1, 16.b2. Here, the corresponding run section 11.2b of the second insulating structure 11.2 also extends along the edge section 10.b of the circuit carrier 10. In contrast, a further structural composite C (comprising three adjacent structural regions 16, 16.c1, 16.c2, 16.c3) which is constructed in a closed manner on the circuit carrier 10 shows a path section 11.2c of the second insulating structure 11.2, wherein the further structural region 16 is at least also arranged between the structural composite C and the edge section of the circuit carrier 10. A closed and wrapped structural composite can also be formed which comprises more than three adjacent structural regions 16. Therefore, in the embodiment, the structural composite D is mentioned by way of example. Further particularities are also shown here. Therefore, a further path section 11.2e can be constructed in an internally offset manner within the path section 11.2d of the second insulating structure 11.2 of such composite D, which further path section itself in turn surrounds at least one structural region 16, 16e in a closed and wrapped manner. This therefore corresponds to the nesting of such path sections 11.2d, 11.2e. More than two inwardly offset nestings can be formed. Additionally, such nesting can be implemented, such as Figure 1 As shown, at least two course sections 11.2e are provided which are offset inwardly relative to the course section 11.2d, but which are themselves arranged side by side, ie no longer nested within one another.

[0039] Additionally, Figure 1 A circuit region is shown, which comprises at least one structure region 16, 16.f1 or a structure composite F consisting of a plurality of adjacent structure regions 16, 16.f1, 16.fx, which, however, is surrounded only by a run section 11.2f of the second insulating structure 11.2 which is open on one side toward the edge section 10.f. In the region of the edge section 10.f, only a partial surface of the exposed first insulating structure 11.1 is constructed to extend complementary to the nearest adjacent structure region 16, 16.fx. The run section 11.2f of the second insulating structure 11.2 ends here at two edge section points f1, f2, which enclose the edge section 10.f between them.

[0040] In this embodiment, the aforementioned possibilities of the course sections 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f of the second insulating structure 11.2 are implemented so as to intersect each other. This means that at least two adjacent course sections 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f share or have the same subsection. In this way, a continuous honeycomb structure is produced, which may have different sizes and shapes of the individual honeycombs, which represent the structural composite B, C, D, F or the individually surrounded structural area 16 surrounded by the closed or open-on-one-side course sections 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f of the second insulating structure 11.2. Depending on the application, different such honeycomb structures are conceivable. Therefore, the run section 11.2g of the second insulating structure 11.2 shows at least one representative honeycomb, which is separated from the otherwise mentioned continuous honeycomb structure. Of course, in other embodiments, additional further individual honeycombs or further connected honeycomb structures can be constructed separately from each other. It is also conceivable to construct discontinuous honeycombs specifically for the corresponding application.

[0041] Figure 2 The schematic diagram shows Figure 1A cross-sectional view of the electrical device 100 proposed in the cutting plane AA. In addition to the structural area 16, a cross-section of the second insulating structure 11.2 in the area of ​​its respectively cut running sections 11.2a, 11.2b is also shown. A groove 18 is constructed between two adjacent structural areas 16, which extends to the substrate surfaces 11a, 11b. The second insulating structure 11.2 extends in the groove 18, wherein different representation possibilities are shown by way of example. Therefore, the structural width m of the second insulating structure 11.2 can be selected to be smaller than the groove width M, so that the second insulating structure 11.2 (as shown on the left side of the represented structural area 16.b2) has a distance, in particular in the form of an air gap, from the enclosed structural area 16. On the right side of the represented structural area 16.a1 is shown a possible implementation, wherein the second insulating structure 11.2 extends to the edge of the respectively enclosed structural area 16. It is generally conceivable that the second insulating structure 11 . 2 extends only on one side surface of the second insulating structure 11 . 2 to the structure region 16 enclosed there, whereas on the opposite side surface the second insulating structure 11 . 2 is spaced apart from the structure region 16 enclosed on this side surface.

[0042] In principle, the second insulating structure 11.2 protrudes from the first insulating structure 11.1 or the substrate surface 11a, 11b by a height dimension H. In this case, the height dimension H is always selected such that the second insulating structure 11.2 protrudes beyond the outer surface of the enclosed structure region 16 by a protrusion dimension h. Due to the protrusion dimension h, the second insulating structure 11.2 is implemented in the form of a protective dam, which partially encloses the circuit carrier 10 in a defined linearly guided manner according to the corresponding course sections 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f. A further embodiment option is shown on the left side of the represented structure region 16.a1, in which the second insulating structure 11.2 covers the respectively enclosed structure regions 16.a1, 16.b2 in a planar manner on both sides in the edge region of the structure region with a covering dimension x. Therefore, the second insulating structure 11.2 has a width dimension m' above the outer surface of the surrounded structure area 16.a1, 16.b2, which is increased relative to the trench width M. Alternatively, the covering can also be implemented only on one side of the second insulating structure 11.2. Figure 2 Unlike the illustration in FIG. 1 , the height dimension H or the protrusion dimension h and the trench width M or the corresponding width dimension m, m′ of the second insulating structure 11 . 2 may differ depending on the section course 11 . 2 a , 11 . 2 b , 11 . 2 c , 11 . 2 d , 11 . 2 e , 11 . 2 f .

[0043] The structured region 16 arranged on the left side is spaced apart from the edge of the circuit carrier 10, so that the protruding area of ​​the carrier substrate 11 is used there to ensure the insulation requirements. In contrast, the structured region 16 arranged on the right side extends to the edge of the circuit carrier 10, so that the maximum area of ​​the structured region 16 can be used here. The insulation requirements are ensured here, so that the second insulating structure 11.2 covers the corner area of ​​the circuit carrier 10 in both corner directions on the edge section. In addition to covering the edge area of ​​the surrounded structured region 16 on the side of the outer surface of the structured region, the end side of the structured region is also completely covered, and in addition, the end side of the carrier substrate 11 is at least partially covered. The covering dimension x' can be adapted in a specific manner to the application.

[0044] Not shown in the cross-sectional view is the alternative possibility of arranging the second insulating structure 11.2 in the edge region of the circuit carrier 10 on the first insulating structure 11.1 and extending to the edge of the circuit carrier 10 and / or the enclosed structure region 16. This is shown in Figure 1 It is optionally possible to implement a second insulating structure 11 . 2 laterally on the end face of the carrier substrate 11 in this case as well, at least partially covering the carrier substrate.

[0045] In principle, the second insulating structure 11.2 can be formed on the first insulating structure 11.1 by means of a dispensing device 200 from a dispensable material. Here, the dispensing device 200 follows the determined path sections 11.2a, 11.2b, 11.2c, 11.2d, 11.2e, 11.2f of the second insulating structure 11.2 when forming at least a single-layer dispensing strip. In order to achieve a large total height and total width of the second insulating structure 11.2, the dispensing strip can also be produced by a plurality of applied layers of the dispensable material. An alternative manufacturing possibility for producing the second insulating structure 11.2 is provided by means of an injection molding process. For this purpose, a circuit carrier 10 that is not equipped or has been partially or completely equipped with an electrical structural element 90 is placed in an injection mold 300, wherein the injection mold 300 has a shape complementary to the determined second insulating structure 11.2 as an enclosed cavity. The second insulating structure 11 . 2 is obtained by injecting an injectable material into the mold 300 until the cavity is completely filled with the material, after solidification of the material through the impression of the cavity.

[0046] Preferably, the electrical device 100 is an electronic module for high-voltage applications, wherein at least the high-voltage region on the circuit carrier is additionally surrounded by the second insulation structure 11 . 2 .

Claims

1. An electrical device (100) comprising at least one circuit carrier (10), the circuit carrier comprising a carrier substrate (11) made of an electrically insulating material (12), wherein: An electrical conductor structure (15) having structured areas (16) is formed on at least one outer surface of the circuit carrier (10), wherein the structured areas are electrically insulated from each other by a first insulating structure (11.1) formed by the insulating material (12) of the carrier substrate (11), characterized in that a dam-shaped second insulating structure (11.2) is at least partially arranged on the first insulating structure (11.1), the second insulating structure surrounds at least one electrically insulating structure area (16, 16.a1) of the conductor structure (15) and / or at least one component of at least two adjacent electrically insulating structure areas (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) with a respectively closed dam course, and in this case protrudes on the side of the outer surface of the circuit carrier (10) respectively beyond the surface of at least one or more surrounded structure areas (16).

2. The electrical device (100) according to claim 1, characterized in that: At least one structural area (16, 16.a1) surrounded in a closed manner or at least one component of at least two structural areas (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) surrounded in a closed manner is constructed as a high-voltage area of ​​the electrical device (100), preferably a high-voltage area >400V, in particular a high-voltage area >600V, for example a high-voltage area >800V.

3. The electrical device (100) according to claim 1 or 2, characterized in that: The second insulating structure (11.2) protrudes from the surface by 1-10 mm, preferably by 1.5-6 mm, at least in the area of ​​at least one structural area (16, 16.a1) surrounded in a closed manner and / or at least one component of at least two structural areas (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) surrounded in a closed manner.

4. The electrical device (100) according to any one of the preceding claims, characterized in that The minimum distance between at least one structural area (16, 16.a1) enclosed in a closed manner and / or at least one component of at least two structural areas (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) enclosed in a closed manner and the nearest adjacent structural area (16) is <=7mm, preferably <=5mm, in particular <=3.5mm.

5. The electrical device (100) according to any one of the preceding claims, characterized in that The second insulating structure (11.2) extends to at least one structural region (16, 16.a1) surrounded in a closed manner and / or at least one or all structural regions (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) of at least one component of at least two structural regions surrounded in a closed manner and / or at least one, in particular all, nearest adjacent structural regions (16) of at least one of the structural regions (16) surrounded in a closed manner.

6. The electrical device (100) according to any one of the preceding claims, characterized in that The second insulating structure (11.2) covers in a planar manner at least one or all of the structural regions (16) surrounded in a closed manner and / or the edge regions of at least one or all of the structural regions (16) closest thereto, in particular with a coverage width of up to at least 1 mm, more preferably up to 2 mm, of the edge contour of the corresponding structural region.

7. The electrical device (100) according to any one of the preceding claims, characterized in that The carrier substrate (11) is aligned flat on the side facing the conductor structure (15), and the nearest adjacent structural areas (16) are arranged to be spaced apart from each other by grooves (18) extending to the substrate surface (11a, 11b), wherein the second insulating structure (11.2) extends on the corresponding sections in the corresponding grooves (18), and the grooves are adjacent to at least one of the structural areas (16) surrounded in a closed manner.

8. The electrical device (100) according to any one of the preceding claims, characterized in that In the region of at least one structure region (16) which is closest to the edge (10f) of the circuit carrier, the second insulating structure (11.2) opens into two edge section points (f1, f2) which are spaced apart from one another.

9. The electrical device (100) according to any one of the preceding claims, characterized in that At least one of the structural areas (16) surrounded in a closed manner extends to a distance of less than 7 mm, preferably less than 5 mm, in particular less than 3 mm from an edge section of the circuit carrier (10), wherein a corresponding sub-section of the second insulating structure (11.2) extends to the edge section of the circuit carrier (10) and / or protrudes from the edge section, in particular with a protrusion dimension of up to 10 mm, for example up to 5 mm.

10. The electrical device (100) according to any one of the preceding claims, characterized in that The second insulating structure (11.2) has a plurality of closed, surrounded structural regions (16) adjacent to one another, in particular in a structural composite (B, C, D, F) and / or a closed, surrounded assembly of at least two structural regions (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3).

11. The electrical device (100) according to any one of the preceding claims, characterized in that The second insulating structures (11.2) respectively surround at least one structural region (16) or components of at least two structural regions (16) and at least one further structural region (16) or further components of at least two structural regions (16) in a nested manner.

12. A method for constructing an electrical device (100), in particular according to any one of the preceding claims, comprising the following method steps: a) providing at least one circuit carrier (10), said circuit carrier comprising a carrier substrate (11) made of an electrically insulating material (12), wherein: An electrical conductor structure (15) is formed on at least one outer surface of the circuit carrier (10), the electrical conductor structure having structure regions (16) which are electrically insulated from one another by a first insulating structure (11.1) formed from the insulating material (12) of the carrier substrate (11), b) a dam-shaped second insulating structure (11.2) is at least partially arranged on the first insulating structure (11.1), wherein at least one electrically insulating structural region (16, 16.a1) of the conductor structure (15) and / or at least one component of at least two adjacent electrically insulating structural regions (16, 16.b1, 16.b2, 16.c1, 16.c2, 16.c3) is surrounded by a respectively closed dam path, so that the second insulating structure (11.2) protrudes beyond the surface of at least one or more surrounded structural regions (16) on the side of the outer surface of the circuit carrier (10).

13. The method according to any one of the preceding claims, characterized in that The second insulating structure (11.2) is formed by means of a dispensing process as a dispensing strip applied at least in a single layer, or by means of an injection molding process, in particular transfer molding or direct injection molding, as a stamp of an injection mold (300).

14. The method according to any one of the preceding claims, characterized in that The second insulating structure (11.2) is formed before the conductor structure (15) is electrically contacted with at least one electrical component (90).

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