Method of manufacturing semiconductor device, corresponding component and semiconductor device
By using preformed electrical coupling members in semiconductor devices, the semiconductor die is electrically coupled to the leads in the lead frame, which solves the major problem of the transmission current of the high-power part, and realizes efficient electrical coupling and simplified manufacturing process.
Patent Information
- Application Number
- CN202411187688.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2024-08-21
- Filing Date
- 2024-08-28
- Publication Date
- 2025-02-28
AI Technical Summary
When manufacturing semiconductor devices, the prior art is difficult to effectively solve the major problem of high-power part transmission current, and the clip separation and disposal are difficult, and ultrasonic wedge bonding technology may damage the pads.
An electrical coupling member is provided by preforming technology for electrically coupling the semiconductor die to the leads in the lead frame, using an electrically insulated preformed compound and a conductive pad, and electrically coupled by attaching a conductive tape to the pad.
High-efficiency electrical coupling in small semiconductor devices is achieved, avoiding clamp separation difficulties and damage to the pads by ultrasonic wedge bonding, and simplifying the device manufacturing process.
Smart Images

Figure CN119542159A_ABST
Abstract
Description
[0001] Priority claim
[0002] This application claims the benefit of priority from Italian Patent Application No. 102023000017700, filed on August 29, 2023, the contents of which are incorporated herein by reference in their entirety to the maximum extent permitted by law. Technical Field
[0003] The present description relates to fabricating semiconductor devices.
[0004] The solutions described herein may be applied to integrated circuit (IC) power semiconductor devices, such as, for example, power quad flat no-lead (QFN) packages used in automotive products. Background Art
[0005] In power semiconductor devices, the current transferred from the high power portion of the device to the output pad can be large.
[0006] Use clips or straps instead of wires for current delivery.
[0007] Clips are currently stamped from flat stock and are provided with centering features, such as pins, that facilitate centering the clip and hold it in place during handling.
[0008] In low power QFN packages and / or if several channels are desired in the final package, more pads are needed and the dimensions of the centering features on the lead frame and clip may become relatively small.
[0009] Furthermore, due to the tighter and elongated shape of the clip, detachment and disposal of the clip may become difficult.
[0010] Another approach is based on using conductive straps to provide electrical coupling between the power section of an integrated circuit (IC) semiconductor device and an external pad.
[0011] These tapes are bonded via ultrasonic wedge bonding techniques, and this bonding method may severely damage the (relatively small) external pads and / or die bond pads provided on the semiconductor die.
[0012] There is a need in the art to address the problems discussed above. Summary of the invention
[0013] One or more embodiments are directed to methods.
[0014] One or more embodiments are directed to corresponding components. An electrical coupling member used in manufacturing a (power) semiconductor device and suitable for being provided by a supplier to a manufacturer of the semiconductor device may be an example of such a component.
[0015] One or more embodiments relate to a semiconductor device including such a component.
[0016] In a solution as described herein, electrical coupling means are provided to electrically couple an integrated circuit semiconductor die to one or more (power) leads.
[0017] In a solution as described herein, the electrical coupling member may be formed via a pre-molding technique.
[0018] The solution as described herein contemplates providing a lead frame, mounting a die thereon, applying electrical coupling members to provide the desired electrical coupling between the die and the leads in the lead frame. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] One or more embodiments will now be described by way of example with reference to the accompanying drawings, in which:
[0020] Figure 1 is a plan view illustrating the structure of a power semiconductor device;
[0021] Figure 2 illustrates the processing steps of a plurality of coupling components according to an embodiment of the present description;
[0022] Figure 3A and Figure 3B illustrates steps in a process of manufacturing a coupling member as described herein;
[0023] Figure 4 and Figure 5 are plan views and cross-sectional views (along the Figure 4 line VV);
[0024] Figure 6 and Figure 7 are plan views and cross-sectional views (along the lines of FIG. 1 and FIG. 2 ) illustrating a coupling member as described herein mounted on a power semiconductor device. Figure 6 line VII-VII);
[0025] Figure 8 illustrates possible steps in the manufacturing process of multiple semiconductor devices; and
[0026] Figures 9 to 14 is a plan view illustrating an embodiment of the present description ( Fig. 9 , Fig.11 and Fig.13 ) and cross-sectional views ( Fig.10 , Fig.12 and Fig.14 ),in Fig.10 It is along Fig. 9 A cross-sectional view of line XX, Fig.12 It is along Fig.11A cross-sectional view taken along line XII-XII of Fig.14 It is along Fig.13 Cross-sectional view along line XIV-XIV. DETAILED DESCRIPTION
[0027] Corresponding numerals and symbols in the different figures generally refer to corresponding parts unless otherwise indicated.
[0028] The figures are drawn to clearly illustrate the relevant aspects of the embodiments and are not necessarily drawn to scale.
[0029] The edges of a feature depicted in the figures do not necessarily indicate the end of the extent of that feature.
[0030] In the following description, one or more specific details will be illustrated to provide a deeper understanding of the examples of the embodiments of the present description. These embodiments can be obtained without one or more specific details, or using other methods, components, materials, etc. In other cases, well-known structures, materials, or operations are not illustrated or described in detail so as not to obscure certain aspects of the embodiments.
[0031] References to "an embodiment" or "one embodiment" in the framework of this description are intended to indicate that a particular configuration, structure, or characteristic associated with the embodiment is included in at least one embodiment. Therefore, phrases such as "in an embodiment" or "in one embodiment" that may appear in one or more points of this description do not necessarily refer to the same embodiment.
[0032] Furthermore, particular conformations, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
[0033] The headings / references used herein are provided for convenience only and do not limit the scope of protection or the scope of the embodiments.
[0034] For simplicity and ease of explanation, throughout the description, unless the context indicates otherwise, the same reference symbols are used in the various figures to indicate the same parts or elements, and the corresponding description will not be repeated for each figure.
[0035] Figure 1 The structure of an integrated circuit (IC) power semiconductor device 10 is shown. The semiconductor device 10 includes a low power part (shown in FIG. Figure 1 left-hand side) and the high-power section (shown in Figure 1On the right-hand side of the lead frame 12, the low-power part includes, for example, a controller die or chip 14A attached to a first die pad 12A in the lead frame 12, and the high-power part includes, for example, one or more power dies or chips 14B attached to one or more die pads 12A in the lead frame 12.
[0036] An array of leads 12B is arranged around a die pad 12A on which a low-power die 14A and a high-power die 14B are mounted.
[0037] As shown herein by way of example, a semiconductor device such as device 10 includes, in addition to a substrate (lead frame) 12 on which one or more semiconductor chips or dies 14A, 14B are arranged (as used herein, the terms chip and die are considered synonymous), conductive structures (wires, straps, clips) 16, 28 that couple the semiconductor dies 14A, 14B to leads (external pads) 12B in the substrate; and an insulating encapsulation (e.g., epoxy, in a protective plastic body) molded over the thus formed assembly to complete the device 10. Figure 4 , Figure 7 , Fig. 9 and Fig.11 2 and designated by reference numeral 22).
[0038] The name "leadframe" (or "lead frame") is currently used (see, e.g., the USPTO's USPC Comprehensive Glossary) to indicate the metal frame that provides support for an integrated circuit chip or die, and the electrical leads used to interconnect the integrated circuit in the die or chip to other electrical components or contacts.
[0039] Essentially, the leadframe 12 includes an array of conductive structures (or leads) 12B that extend inwardly from a profile position in the direction of a semiconductor chip or die (such as, for example, 14A or 14B) to form an array of conductive structures from a die pad 12A configured to attach at least one semiconductor chip or die thereto. This can be achieved via conventional means, such as a die attach adhesive (e.g., a die attach film (DAF)).
[0040] In some cases, the leadframe may be of a preformed type, ie, a leadframe that includes an engraved metal (eg, copper) structure formed by etching a metal sheet and includes empty spaces filled with a resin "preformed" on the engraved metal structure.
[0041] The current delivered from the high power portion of the device to the output pad 12B may be large. Figure 1As shown on the right hand side of FIG. , the clip 28 is thus used to replace the wire. The wire 16 can still be used to provide electrical coupling to the low power portion of the device (eg, the controller die), such as Figure 1 shown on the left hand side.
[0042] That is, Figure 1 As shown in , a conductive structure is provided, which includes a low power part ( Figure 1 1 and 12B) are coupled to wire bonding patterns 16 of selected ones of leads 12B. These wire bonding patterns are coupled to die (bonding) pads (not visible in the figure for reasons of scale) provided at the front or top surface of the chip.
[0043] In contrast, the clamp 28 is used to connect the high power part ( Figure 1 The right-hand side of the power semiconductor device 10 is coupled to a selected one of the leads 12B that serves as a (power) output pad of the device 10. The use of a clip instead of a wire is due to the fact that the current transferred from the high power portion of the power semiconductor device to the output pad can be large.
[0044] According to conventional methods, for example, Figure 1 The clip 28 shown in FIG. 1 is formed by stamping a flat metal (eg, copper) material.
[0045] The clip is usually provided with a centering feature that facilitates installation and keeps the clip 28 in place during handling. For example, pins can be provided at the terminal portion of the clip via stamping, which pins will be coupled to corresponding leads 12B provided with recessed portions at corresponding locations.
[0046] Due to the relatively small dimensions of current semiconductor devices, it is becoming increasingly difficult to provide centering features such as pins via conventional stamping tools. In certain devices, when more than two power channels are desired, pins cannot be provided.
[0047] According to another conventional approach, a ribbon, ie, a conductive (eg, metallic material such as copper or a copper alloy) strip configuration, is used to provide the desired (power) electrical coupling between the power semiconductor die 14B and the power leads 12B.
[0048] The terminal portions of the tape may be bonded to the underlying die bond pads 18 or leads 12B via ultrasonic wedge bonding techniques to form the desired electrical coupling and hold the tape in place during processing of the device.
[0049] Ultrasonic wedge bonding is essentially based on the application of ultrasound and (mechanical) pressure to form an electrical connection between the terminal portion of the tape and the underlying surface.
[0050] While wedge bonding has advantages in some respects, it can have adverse effects on the device structure due to the mechanical stress applied during bond formation.
[0051] Mechanical stresses applied during the wedge bonding step may adversely affect both leadframe 12 and semiconductor die 14B, possibly causing deformation of leadframe 12 and / or cratering of semiconductor die 14B at its die bond pad 18. Such adverse effects may result in failure and rejection of the device being processed.
[0052] In a solution as described herein, electrical coupling means are provided to electrically couple a semiconductor die to one or more (power) leads.
[0053] In a solution as described herein, the electrical coupling member may be provided via a pre-molding technique.
[0054] The solution as described herein contemplates providing a lead frame, mounting a die thereon, applying electrical coupling members to form electrical connections between the die and the leads in the lead frame.
[0055] Electrical coupling members as described herein may be formed via pre-forming techniques, similar to the process of providing a pre-formed lead frame.
[0056] As known to those skilled in the art, during the manufacturing process of preformed lead frames, multiple individual lead frames may be arranged in a lead frame reel (ie, a common substrate) to facilitate simultaneous processing thereof.
[0057] In a similar manner, one can provide Figure 2 The coupling reel 1000 shown in FIG. 1 is used to process a plurality of coupling members 100 simultaneously, and the coupling reel 1000 includes a plurality of individual coupling members 100 .
[0058] Figure 3A and Figure 3B is an enlarged view of a portion of the coupling reel 1000 indicated by arrow III, illustrating a process step for manufacturing the coupling member 100 according to an embodiment of the present description.
[0059] like Figure 3A As shown in FIG. 1 , a portion of the coupling reel 1000 includes an outer frame of an electrically insulating preform compound 20 .
[0060] The elongated body 101 of the electrically insulating preform compound 20 is supported by an outer frame and divides the area contained in the outer frame into two empty areas 103 .
[0061] The body 101 is provided with an electrically metallic (eg copper) pad 102 at a first surface of the body 101 of the electrically insulating compound 20 which is exposed, ie not covered by the preform compound 20 .
[0062] As mentioned, conventional preforming techniques can be used to form Figure 3A 1000; a metal (e.g., copper) sheet may be processed via a first (photo) etching step to form an engraved structure comprising empty spaces filled with a resin "preformed" on the engraved metal structure. A second (photo) etching step may be performed to etch away additional metal material, thereby forming additional features (such as empty areas 103) in the engraved structure.
[0063] Figure 3B The process steps of attaching the conductive ribbon 108 to the body 101 of the coupling member 100 are illustrated.
[0064] As illustrated in the figure, two tapes 108 may be attached to each metal pad 102 exposed at the first surface of the body 101 of the coupling member 100. The tapes 108 may be attached, for example, via conventional (ultrasonic) wedge bonding techniques.
[0065] In more detail, the first ribbon 108 may be wedge-bonded at its (proximal) terminal portion to the metal pad 102 exposed at the first surface of the body 101. The second ribbon 108 may be wedge-bonded to the terminal end of the first ribbon 108 previously welded to the metal pad 102 (wedge on wedge), such as Figure 3B The distal terminal portion of the ribbon 108 is configured to contact the die bond pads 18 and leads 12B of the (IC) semiconductor die 14B.
[0066] In the exemplary case, two tapes 108 are attached to each of the four metal pads 102 to provide four (high current) electrical couplings between semiconductor die 14B and leads 12B, as described below.
[0067] For simplicity and ease of explanation, the following description will consider the case of a coupling member 100 having four high current electrical couplings. This is by way of example only, as the device design may suggest a different number or arrangement of couplings.
[0068] Along Figure 3B Cutting along the cutting line indicated by reference CL in FIG. 1 (for example, with a saw or a blade) will result in the following: Figure 4 and Figure 5 The separate coupling member 100 shown in Figure 5 It is along Figure 4 sectional view along line VV).
[0069] like Figure 5As shown in , the metal pad 102 may be uncovered by the electrically insulating (pre)mold compound at a first surface of the body 101 and covered by the (pre)mold compound 20 at a second surface (opposite to the first surface) of the body 101 of the coupling member 100 .
[0070] In other words, the coupling member 100 as described herein includes (at least) one conductive pad 102 having first and second conductive strips 108 protruding therefrom, the first and second conductive strips 108 having proximal ends located at the conductive pad 102 and distal ends distal from the conductive pad 102 .
[0071] Distal ends of the first and second conductive ribbons 108 are configured to be electrically coupled to a semiconductor die (such as semiconductor die 14B) and (at least one) conductive lead 12B disposed at a die mounting location 12A of the lead frame 12 , respectively.
[0072] The electrical coupling member 100 may include an electrical insulator 101 at a side of which the conductive pads 102 are exposed. Proximal ends of the first and second conductive strips 108 are arranged at the side of the electrical insulator 101 where the conductive pads 102 are exposed.
[0073] Figure 6 and Figure 7 (in Figure 7 It is along Figure 6 ) illustrates a coupling member 100 applied to a lead frame 12 on which a (power) semiconductor die 14B is mounted to provide a desired electrical coupling between the semiconductor die 14B and the leads 12B.
[0074] As shown, the size and dimensions of coupling structure 100 and its components, as well as the location of metal pads 102 (and thus the location of tape 108 ), may be selected to match the location of, and distance between, die bond pads 18 and leads 12B.
[0075] The distal terminal portions of the tape 108 are attached to the die bond pads 18 and the leads 12B by providing solder SM thereon.
[0076] like Figure 6 As shown in , two ribbons 108 having one of their ends soldered to metal pads 102 exposed at a first surface of a body 101 of a coupling member 100 provide electrical coupling between die bond pads 18 provided on the top / front surface of a (power) semiconductor die 14B and the (power) leads 12B.
[0077] It can be appreciated that handling, centering and keeping the coupling member 100 in place as described herein is much easier than using separate clips. In addition, the coupling member 100 can be provided with centering features (such as pins, not shown in the figure for simplicity) to facilitate positioning of the coupling member 100.
[0078] In summary, the manufacturing process as described herein includes: arranging a semiconductor die 14B at a die mounting location (i.e., a die pad) 12A of a substrate (e.g., a lead frame) 12, wherein the substrate 12 includes an array of conductive leads 12B arranged laterally at the die mounting location 12A; electrically coupling the semiconductor die 14B arranged at the die mounting location 12A of the substrate 12 with one (or more) conductive leads 12B in the array of conductive leads 12B via an electrical coupling member 100 applied to the semiconductor die 14B.
[0079] The electrical coupling member 100 includes one (or more) conductive pads 102 having first and second conductive strips 108 protruding therefrom. The first and second conductive strips 108 have proximal ends located at the conductive pads 102 and distal ends distal to the conductive pads 102.
[0080] Therefore, distal ends of the first and second conductive ribbons 108 are electrically coupled to the semiconductor die 14B and the conductive lead 12B arranged at the die mounting location 12A of the substrate 12 , respectively, to provide electrical coupling therebetween.
[0081] For example, Figure 6 As shown in , further processing of (integrated circuit) semiconductor devices may involve molding an electrically insulating compound to provide a protective package for the device. For example, Figure 7 The package is illustrated in FIG. 2 and is referenced therein by reference numeral 22 .
[0082] As mentioned, processing multiple coupling members 100 simultaneously may involve providing a coupling reel including a plurality of such coupling members 100 .
[0083] Figure 8 One possible processing step is illustrated in which a plurality of coupling members 100 are simultaneously mounted on a corresponding plurality of lead frames 12 having respective semiconductor dies disposed thereon.
[0084] As shown, a coupling reel 1000 including a plurality of coupling members 100 may be mounted on a leadframe reel 1200 ; each coupling reel 1000 portion (including an individual coupling member 100 ) may mate with a corresponding leadframe reel 1200 portion (including an individual leadframe 12 ).
[0085] This processing step may be facilitated by providing the reels 1000, 1200 with centering features such as pins and corresponding recessed portions (not visible for simplicity).
[0086] After the coupling reel 1000 is applied to the lead frame reel 1200, the desired electrical coupling can be provided to each portion of the reel by electrically coupling the distal ends of the tapes 108 of the individual coupling members 100 contained in the coupling reel 1000 to the die bonding pads 18 and leads 12B of the corresponding individual lead frames 12 contained in the lead frame reel 1200, similar to what was discussed in the case where the individual coupling members 100 are mounted on the individual lead frames 12.
[0087] The reels 1000, 1200 may be further processed to process multiple devices simultaneously and ultimately separated to obtain multiple individual, processed devices.
[0088] Figures 9 to 14 Other possible embodiments of the present description are illustrated.
[0089] Fig. 9 and Fig.10 (in Fig.10 It is along Fig. 9 ) illustrates an embodiment in which coupling member 100 is mounted such that metal pad 102 (and tape 108 attached thereto) faces semiconductor die 14B mounted on lead frame 12 .
[0090] The tape 108 may be attached to the die bond pads 18 and leads 12B as previously described, ie, by providing solder SM, such as solder paste or glue.
[0091] like Fig.10 As shown in FIG. , an insulating protective package 22 may be provided for device 10 by molding an insulating molding compound, such as, for example, epoxy, over the assembly.
[0092] Fig.11 and Fig.12 (in Fig.12 It is along Fig.11 ) illustrates an embodiment of the present description in which the coupling member 100 has metal pads 102 not covered by the preform compound 20 on both the first and second surfaces of the body 101 of the coupling member 100.
[0093] Such a coupling member 100 may be applied to a semiconductor die 14B, wherein the first surface of the body 101 faces the semiconductor die 14B, such as Fig.11 as shown in .
[0094] like Fig.12As shown in , electrically insulating package 22 may be provided in such a manner that metal pads 102 are exposed at the top / front surface of device 10 .
[0095] That is, the electrical coupling member may be formed in such a manner that the electrical insulator 101 exposes the conductive pad 102 at the other side of the electrical insulator 101 opposite to the side at which the proximal ends of the first and second conductive strips 108 are arranged.
[0096] The insulating package 22 molded onto the semiconductor die 14B and the electrical coupling member 100 may leave the conductive pads 102 exposed at the other side of the electrical insulator 101 uncovered.
[0097] Fig.13 and Fig.14 (in Fig.14 It is along Fig.13 ) illustrates an embodiment in which two power paths are short-circuited (“shorted”).
[0098] Such a short circuit may be obtained by providing a third strap 108 electrically coupling two adjacent metal pads 102 .
[0099] exist Fig.13 and Fig.14 In the example shown in , the terminal ends of the first ribbon 108 are wedge bonded on two adjacent metal pads 102, thereby providing a short circuit between them. Additional ribbons 108 are soldered (wedge-on-wedge bonding) to provide electrical coupling in a similar manner as previously described.
[0100] The claims are an integral part of the technical teaching provided for the exemplary embodiments.
[0101] Without prejudice to the underlying principles, the details and embodiments may vary, even significantly, with respect to what is described merely as an example, without departing from the scope of protection, which is determined by the appended claims.
Claims
1. A method comprising: placing a semiconductor die at a die mounting location of a substrate, the substrate comprising an array of conductive leads arranged transversely of the die mounting location; electrically coupling the semiconductor die disposed at the die mounting location of the substrate with at least one conductive lead of the array of conductive leads via an electrical coupling member applied to the semiconductor die; wherein the electrical coupling member comprises at least one conductive pad having a first conductive strip and a second conductive strip protruding therefrom, the first conductive strip and the second conductive strip having a proximal end located at the conductive pad and a distal end away from the conductive pad; and The electrical coupling includes electrically coupling distal ends of the first conductive tape and the second conductive tape to the semiconductor die and the at least one conductive lead arranged at the die mounting position of the substrate, respectively, to provide electrical coupling therebetween.
2. The method according to claim 1: in, The electrical coupling member includes a plurality of conductive pads, each conductive pad having respective first and second conductive strips protruding therefrom; as well as Wherein, the electrical coupling includes coupling distal ends of the respective first and second conductive strips to the semiconductor die arranged at the die mounting location of the substrate and to respective conductive leads in the array to provide electrical coupling therebetween. 3 . The method of claim 2 , further comprising electrically coupling adjacent ones of the plurality of conductive pads via a third conductive strip.
4. The method according to claim 1: in, The electrical coupling member includes an electrical insulator, with the at least one conductive pad exposed at a side of the electrical insulator; and Wherein, the proximal ends of the first and second conductive strips are arranged at the side of the electrical insulator.
5. The method of claim 4, further comprising molding an insulating package onto the semiconductor die disposed at the die mounting location of the substrate and onto the electrical coupling member applied to the semiconductor die.
6. The method according to claim 5: in, The electrical insulator has the at least one conductive pad exposed at another side of the electrical insulator opposite to the side where the proximal ends of the first and second conductive strips are arranged; as well as The molding includes molding the insulating package onto the semiconductor die arranged at the die mounting position of the substrate and onto the electrical coupling member applied to the semiconductor die, wherein the insulating package leaves the at least one conductive pad exposed at the other side of the electrical insulator uncovered.
7. A method comprising: providing a first reel carrying a first array of semiconductor dies arranged at respective die mounting locations of a substrate and respective conductive leads arranged transversely of the die mounting locations; providing a second reel, the second reel carrying a second array of electrical coupling members, the second array configured to electrically couple the semiconductor die to corresponding conductive leads in the first reel; wherein each electrical coupling member comprises at least one conductive pad having a first conductive strip and a second conductive strip protruding therefrom, the first conductive strip and the second conductive strip having a proximal end located at the conductive pad and a distal end away from the conductive pad; placing the first reel and the second reel in a face-to-face relationship, wherein the electrical coupling members in the second array are applied to corresponding semiconductor dies in the first array; and Distal ends of the first and second conductive strips of the electrical coupling member of the second reel are electrically coupled to the semiconductor die arranged at the die mounting position of the substrate and the conductive leads of the first reel, respectively, to provide electrical coupling therebetween. 8 . The method of claim 7 , further comprising electrically coupling adjacent ones of the plurality of conductive pads via a third conductive strip.
9. The method according to claim 7: in, Each electrical coupling member comprises an electrical insulator, with the at least one conductive pad exposed at a side of the electrical insulator; and Wherein, the proximal ends of the first and second conductive strips are arranged at the side of the electrical insulator.
10. The method of claim 9, further comprising molding an insulating package onto the semiconductor die disposed at the die mounting location of the substrate and onto the electrical coupling member applied to the semiconductor die.
11. The method according to claim 10: in, The electrical insulator has the at least one conductive pad exposed at another side of the electrical insulator opposite to the side where the proximal ends of the first and second conductive strips are arranged; as well as The molding includes molding the insulating package onto the semiconductor die arranged at the die mounting position of the substrate and onto the electrical coupling member applied to the semiconductor die, wherein the insulating package leaves the at least one conductive pad exposed at the other side of the electrical insulator uncovered.
12. An electrical coupling member configured to electrically couple a semiconductor die arranged at a die mounting location of a substrate with at least one conductive lead arranged laterally of the die mounting location, the electrical coupling member comprising: at least one conductive pad; a first conductive strip and a second conductive strip protruding from the at least one conductive pad, the first conductive strip and the second conductive strip having a proximal end located at the conductive pad and a distal end distal from the conductive pad; as well as The distal ends of the first conductive tape and the second conductive tape are configured to be electrically coupled to the semiconductor die and the at least one conductive lead arranged at the die mounting position of the substrate, respectively, to provide electrical coupling therebetween.
13. The electrical coupling member of claim 12, comprising an array of a plurality of conductive pads and conductive leads, each conductive pad having respective first and second conductive strips protruding therefrom, wherein: Distal ends of the respective first and second conductive strips are configured to be coupled to the semiconductor die disposed at the die mounting location of the substrate and to respective conductive leads in the array to provide electrical coupling therebetween.
14. The electrical coupling member of claim 13, comprising a third conductive strip configured to electrically couple adjacent conductive pads of the plurality of conductive pads.
15. The electrical coupling member according to claim 14, wherein: The electrical coupling member includes an electrical insulator, exposing the at least one conductive pad at a side of the electrical insulator, wherein proximal ends of the first and second conductive strips are disposed at the side of the electrical insulator.
16. A semiconductor device comprising: a substrate having at least one conductive lead disposed laterally of the die mounting location; A semiconductor die is arranged at a die mounting position of the substrate; as well as an electrical coupling member including at least one conductive pad having a first conductive strip and a second conductive strip protruding therefrom, the first conductive strip and the second conductive strip having a proximal end located at the conductive pad and a distal end distal from the conductive pad; Wherein, distal ends of the first conductive tape and the second conductive tape are electrically coupled to the semiconductor die and the at least one conductive lead arranged at the die mounting position of the substrate, respectively, to provide electrical coupling therebetween.
17. The semiconductor device according to claim 16, wherein: The electrical coupling member includes an electrical insulator, exposing the at least one conductive pad at a side of the electrical insulator, and wherein proximal ends of the first and second conductive strips are disposed at the side of the electrical insulator.
18. The semiconductor device of claim 17, comprising an insulating package molded onto the semiconductor die disposed at the die mounting location of the substrate and molded onto the electrical coupling member applied to the semiconductor die.
19. The semiconductor device according to claim 18, wherein: the electrical insulator having the at least one conductive pad exposed at another side of the electrical insulator opposite to the side on which the proximal ends of the first and second conductive strips are arranged, and The insulating encapsulation leaves the at least one conductive pad exposed at the other side of the electrical insulator uncovered.
20. The semiconductor device according to claim 16, wherein: The substrate is a preformed lead frame.