Perovskite passivation layer and preparation method thereof

Abstract

The invention provides a perovskite passivation layer and a preparation method thereof. According to the invention, a perovskite passivation layer is arranged on the surface of a perovskite absorption layer, and the material of the perovskite passivation layer contains an alkyl diamine compound and a phenylethyl ammonium compound; the phenethyl ammonium compound is selected from p-trifluoromethyl phenylethylamine hydrochloride and / or p-fluorophenethyl hydriodate. According to the perovskite solar cell and the preparation method thereof, the alkyl diamine compound and the phenylethyl ammonium compound are cooperated to form the passivation layer, the simultaneous effect of surface passivation and interface passivation can be exerted, the carrier recombination of the surface and the interface is reduced, the electron extraction capability is improved, and the energy conversion efficiency of the perovskite solar cell is further improved.

Description

Technical Field

[0001] The present invention relates to the field of perovskite solar cells, and in particular to a perovskite passivation layer and a preparation method thereof. Background Art

[0002] Recently, the power conversion efficiency of perovskite solar cells has increased from the initial 3.8% to the current 25.7%. The rapid increase in efficiency provides confidence for the commercial application of perovskite solar cells. The top interface between perovskite and the electron transport layer

[0003] (ETL) is usually made of C60 and its derivatives, which leads to interface recombination due to the influence of minority carriers near the interface and incompletely passivated trap states. 2+ ions lead to non-radiative recombination at the perovskite-charge transport layer interface, thus limiting the photovoltage and fill factor. Therefore, improving the quality of perovskite films, optimizing band matching, and reducing the incompatible Pb 2+ Defects are an effective way to improve their performance.

[0004] In recent years, various passivation methods have been used to passivate the perovskite surface and interface to improve the photovoltage and fill factor. However, relying on a single type of molecule may not be able to simultaneously address the surface and interface recombination processes, resulting in a loss of turn-on voltage and fill factor. Summary of the invention

[0005] In order to overcome the problem that the prior art cannot simultaneously solve the passivation perovskite surface and interface recombination process, resulting in the loss of opening voltage and fill factor, the present invention provides a perovskite passivation layer and a preparation method thereof. The present invention forms a passivation layer by synergizing an alkyl diamine compound and a phenethyl ammonium compound, which can play the role of surface passivation and interface passivation at the same time, reduce the carrier recombination on the surface and the interface, improve the electron extraction ability, and thus improve the energy conversion efficiency of the perovskite solar cell.

[0006] Specifically, the first aspect of the present invention provides a perovskite passivation layer, which is arranged on the surface of the perovskite absorption layer, and the material of the perovskite passivation layer contains alkyl diamine compounds and phenethyl ammonium compounds; the phenethyl ammonium compound is selected from trifluoromethyl phenethylamine hydrochloride and / or fluorophenethyl hydroiodide.

[0007] In one or more embodiments, the alkyl diamine compound is selected from one or more of ethylene diamine hydroiodide, propylene diamine hydroiodide and butyl diamine hydroiodide.

[0008] In one or more embodiments, the perovskite passivation layer has a thickness of 0.2-1 nm.

[0009] In one or more embodiments, the perovskite absorber layer has a thickness of 300-600 nm.

[0010] In one or more embodiments, the active material of the perovskite absorption layer contains an ABX3 compound, wherein A is a monovalent cation, for example, a mixture of one or more monovalent cations selected from cesium, rubidium, methylamine, and methylamidine; B is a divalent cation, for example, a mixture of one or more divalent cations selected from lead, copper, zinc, gallium, tin, and calcium; X is a monovalent anion, for example, a mixture of one or more monovalent anions selected from iodine, bromine, chlorine, fluorine, and thiocyanate; preferably, the active material of the perovskite absorption layer is selected from CsFAPbI3, MAPbI3, CsPbI3, and CsxFA 1-x Pb(IyBr 1-y )3 or more.

[0011] A second aspect of the present invention provides a method for preparing a perovskite passivation layer as described in any embodiment of the present invention, the method comprising the following steps:

[0012] S1. preparing a perovskite passivation precursor solution: mixing an alkyl diamine compound, a phenethyl ammonium compound and a solvent to obtain a perovskite passivation precursor solution;

[0013] S2. coating the perovskite passivation precursor solution on the surface of the perovskite absorption layer by a solution method, and annealing to obtain a perovskite passivation layer.

[0014] In one or more embodiments, the mass concentration of the alkyl diamine compound is 0.5-3 mg / mL.

[0015] In one or more embodiments, the mass concentration of the phenethylammonium compound is 0.5-3 mg / mL.

[0016] In one or more embodiments, the solvent is selected from one or more of isopropanol, ethanol, chloroform and phenetole.

[0017] In one or more embodiments, the solution process is a slot coating process and / or a knife coating process.

[0018] In one or more embodiments, the coating rate is 15-25 mm / s.

[0019] In one or more embodiments, the annealing process conditions are: annealing temperature is 80-120° C., and annealing time is 3-10 min.

[0020] A third aspect of the present invention provides a perovskite solar cell, which comprises a substrate, a transparent conductive electrode, a hole transport layer, a perovskite absorption layer, a perovskite passivation layer as described in any embodiment of the present invention, an electron transport layer and an electrode arranged in sequence from bottom to top.

[0021] In one or more embodiments, the material of the transparent conductive electrode is selected from ITO or FTO.

[0022] In one or more embodiments, the transparent conductive electrode has a thickness of 80 nm to 120 nm.

[0023] In one or more embodiments, the material of the hole transport layer is selected from one or more of nickel oxide, polytriarylamine, poly(3,4-ethylenedioxythiophene), and poly(styrene sulfonic acid).

[0024] In one or more embodiments, the hole transport layer has a thickness of 10 nm to 30 nm.

[0025] In one or more embodiments, the material of the perovskite absorber layer is selected from CsFAPbI3, MAPbI3, CsPbI3 and CsxFA 1-x Pb(IyBr 1-y )3 or more.

[0026] In one or more embodiments, the perovskite absorber layer has a thickness of 300 nm to 600 nm.

[0027] In one or more embodiments, the material of the electron transport layer is selected from one or more of C60, TiO2, ZnO, WO3, SnO2, Zn2SnO4, fullerene and derivatives thereof.

[0028] In one or more embodiments, the electron transport layer has a thickness of 10 nm to 30 nm.

[0029] In one or more embodiments, the material of the electrode is selected from one or more of copper, aluminum and silver.

[0030] In one or more embodiments, the electrode has a thickness of 90 nm to 400 nm.

[0031] A fourth aspect of the present invention provides the use of a perovskite passivation layer as described in any embodiment herein in stabilizing a perovskite structure or preparing a perovskite solar cell.

[0032] The fifth aspect of the present invention provides the use of alkyl diamine compounds and phenethyl ammonium compounds for simultaneously passivating the surface and interface of the perovskite absorption layer; preferably, the phenethyl ammonium compound is selected from p-trifluoromethylphenethylamine hydrochloride and / or p-fluorophenethyl hydroiodide.

[0033] The sixth aspect of the present invention provides the use of alkyl diamine compounds and phenethyl ammonium compounds in the preparation of perovskite solar cells; preferably, the phenethyl ammonium compound is selected from p-trifluoromethylphenethylamine hydrochloride and / or p-fluorophenethyl hydroiodide. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 This is a structural diagram of the inverted perovskite solar cell of the present invention.

[0035] Among them, 1 is conductive glass; 2 is hole transport layer; 3 is perovskite layer; 4 is passivation layer; 5 is electron transport layer; 6 is electrode. DETAILED DESCRIPTION

[0036] In order to enable those skilled in the art to understand the characteristics and effects of the present invention, the following is a general description and definition of the terms and expressions mentioned in this article. Unless otherwise specified, all technical and scientific terms used in this article are the common meanings understood by those skilled in the art for the present invention. In the event of a conflict, the definitions in this article shall prevail.

[0037] The theories or mechanisms described and disclosed herein, whether correct or incorrect, should not limit the scope of the present invention in any way, that is, the present invention can be implemented without being limited by any specific theory or mechanism.

[0038] Herein, “comprising”, “including”, “containing” and similar terms encompass the meanings of “consisting essentially of” and “consisting of”. For example, when “A comprises B and C” is disclosed herein, “A consists essentially of B and C” and “A consists of B and C” should be deemed to be disclosed herein.

[0039] In this article, all features such as values, quantities, contents and concentrations defined in the form of numerical ranges or percentage ranges are only for brevity and convenience. Accordingly, the description of numerical ranges or percentage ranges should be considered to have included and specifically disclosed all possible secondary ranges and individual values ​​within the range (including integers and fractions).

[0040] In this document, unless otherwise specified, percentage refers to mass percentage and ratio refers to mass ratio.

[0041] Herein, when describing embodiments or examples, it should be understood that they are not used to limit the present invention to these embodiments or examples. On the contrary, all substitutes, improvements and equivalents of the methods and materials described in the present invention can be included in the scope limited by the claims.

[0042] In this document, in order to make the description concise, not all possible combinations of various technical features in various embodiments or examples are described. Therefore, as long as there is no contradiction in the combination of these technical features, the various technical features in various embodiments or examples can be combined arbitrarily, and all possible combinations should be considered to be within the scope of this specification.

[0043] The purpose of the present invention is to provide a perovskite passivation layer and a preparation method thereof. The inventors of the present invention have found that the synergistic combination of alkyl diamine compounds and phenethyl ammonium compounds to form a passivation layer can simultaneously play the role of surface passivation and interface passivation, reduce the recombination of carriers on the surface and interface, and improve the ability to extract electrons.

[0044] In the present invention, the phenethylammonium compound is a hydrohalide salt of phenethylammonium substituted with halogen or halogenated C1-4 alkyl.

[0045] In some embodiments, the halogen can be one or more of F, Cl, Br, and I.

[0046] In some embodiments, the halogenated C1-4 alkyl group may be a C1-4 alkyl group substituted with 1 to 5 halogens such as F or Cl.

[0047] In some embodiments, the number of substituents on the benzene ring can be 1, 2, or 3.

[0048] In some embodiments, the hydrohalic acid can be hydrochloric acid, hydrobromic acid, or hydroiodic acid.

[0049] Selected from p-trifluoromethylphenylethylamine hydrochloride and / or p-fluorophenylethyl hydroiodide. Phenethylammonium compounds can effectively passivate defect sites, such as excess lead iodide and under-coordinated point defects, thereby significantly improving the film quality and device performance of the perovskite absorber.

[0050] In the present invention, the alkyl diamine compound is selected from one or more of ethylene diamine hydroiodide, propylene diamine hydroiodide and butyl diamine hydroiodide. The alkyl diamine compound molecules repel minority carriers and reduce contact induced interface recombination achieved by field effect passivation.

[0051] In the present invention, the thickness of the perovskite passivation layer may be 0.2-1 nm.

[0052] In the present invention, the active material of the perovskite absorption layer contains ABX3 compounds, wherein A is a monovalent cation, such as a mixture of one or several monovalent cations of cesium, rubidium, methylamine, and methylamidine; B is a divalent cation, such as a mixture of one or several divalent cations of lead, copper, zinc, gallium, tin, and calcium; and X is a monovalent anion, such as a mixture of one or several monovalent anions of iodine, bromine, chlorine, fluorine, and thiocyanate. In some preferred embodiments, the active material of the perovskite absorption layer is selected from CsFAPbI3, MAPbI3, CsPbI3, and Cs x FA 1-x Pb(IyBr 1-y )3 or more.

[0053] The perovskite passivation layer of the present invention can be obtained by coating a perovskite passivation precursor solution containing an alkyl diamine compound and a phenethyl ammonium compound on the surface of the perovskite absorption layer and annealing.

[0054] In some embodiments, the method for preparing the perovskite passivation layer of the present invention comprises the following steps:

[0055] S1. preparing a perovskite passivation precursor solution: mixing an alkyl diamine compound, a phenethyl ammonium compound and a solvent to obtain a perovskite passivation precursor solution;

[0056] S2. coating the perovskite passivation precursor solution on the surface of the perovskite absorption layer by a solution method, and annealing to obtain a perovskite passivation layer.

[0057] In some embodiments, the mass concentration of the alkyldiamine compound in the perovskite passivation precursor solution is 0.5-3 mg / mL.

[0058] In some embodiments, the mass concentration of the phenethylammonium compound in the perovskite passivation precursor solution is 0.5-3 mg / mL.

[0059] In step S1, the solvent can be selected from one or more of isopropanol, ethanol, chloroform and phenethyl ether.

[0060] In step S2, the solution method can be selected from a slit coating method and / or a blade coating method. In some embodiments, the solution method is a slit coating method. The coating thickness of the perovskite passivation precursor solution can be adjusted according to the target thickness of the perovskite passivation layer. The coating rate can be 15-25 mm / s.

[0061] In step S2, the annealing temperature may be 80-120°C, and the annealing time may be 3-10 minutes.

[0062] The present invention also provides a perovskite solar cell, which comprises, from bottom to top, a substrate, a transparent conductive electrode, a hole transport layer, a perovskite absorption layer, a perovskite passivation layer, an electron transport layer and an electrode.

[0063] The substrate material applicable to the present invention may be a conventional substrate material used in the art for preparing perovskite solar cells, such as a transparent glass substrate.

[0064] The material suitable for the transparent conductive electrode of the present invention can be selected from ITO or FTO. In the present invention, the preparation of the transparent conductive electrode is not particularly limited, and the conventional method for preparing the transparent conductive electrode in the art can be used, for example, a magnetron sputtering process is used to deposit it on the surface of the substrate. The process parameters can be adjusted according to the target thickness of the conductive oxide layer. In some embodiments, the thickness of the transparent conductive electrode is 80nm-120nm.

[0065] The material suitable for the hole transport layer of the present invention can be selected from one or more of nickel oxide, polytriarylamine, poly(3,4-ethylenedioxythiophene) and poly(styrene sulfonic acid). The preparation of the hole transport layer is not particularly limited, and the conventional method for preparing the hole transport layer in the art can be used, such as a process using magnetron sputtering. The process parameters can be adjusted according to the target thickness of the hole transport layer. In some embodiments, the thickness of the hole transport layer is 10nm-30nm.

[0066] The active material of the perovskite absorption layer suitable for the present invention contains ABX3 compound, A is a monovalent cation, for example, one or a mixture of monovalent cations selected from cesium, rubidium, methylamine, and methylamidine; B is a divalent cation, for example, one or a mixture of divalent cations selected from lead, copper, zinc, gallium, tin, and calcium; X is a monovalent anion, for example, one or a mixture of monovalent anions selected from iodine, bromine, chlorine, fluorine, and thiocyanate. In some embodiments, the material of the perovskite absorption layer is selected from CsFAPbI3, MAPbI3, CsPbI3, and CsxFA 1-x Pb(IyBr 1-y )3. The preparation of the perovskite absorbing layer is not particularly limited, and the conventional method for preparing the perovskite absorbing layer in the art can be used, including but not limited to one or more of spin coating, blade coating, evaporation, printing, spraying, spray pyrolysis, and slit coating. The process parameters can be adjusted according to the target thickness of the perovskite absorbing layer. In some embodiments, the thickness of the perovskite absorbing layer is 300-600nm.

[0067] Materials suitable for the electron transport layer of the present invention include, but are not limited to, one or more of C60, TiO2, ZnO, WO3, SnO2, Zn2SnO4, fullerene and its derivatives. The preparation of the electron transport layer is not particularly limited, and the conventional method for preparing the electron transport layer in the art can be adopted, including but not limited to one or more of spin coating, spray coating, spray pyrolysis, slit coating, and atomic layer deposition. The process parameters can be adjusted according to the target thickness of the electron transport layer. In some embodiments, the thickness of the electron transport layer is 10nm-30nm. In some embodiments, the electron transport layer includes a C60 layer and a SnO2 layer. Among them, the thickness of the C60 layer is 25-35nm; the thickness of the SnO2 layer is 10-20nm.

[0068] The material suitable for the electrode of the present invention can be selected from one or more of copper, aluminum and silver. In some embodiments, the thickness of the electrode is 90nm-400nm.

[0069] In some embodiments, the perovskite solar cell is a single-junction perovskite solar cell or a tandem perovskite solar cell. Tandem perovskite solar cells exemplarily include two-terminal tandem cells, three-terminal tandem cells, and four-terminal tandem cells.

[0070] Beneficial effects of the present invention:

[0071] Two passivation molecules work together for passivation. One halogenated phenylethylammonium molecule is used to passivate perovskite defect sites, such as excess lead iodide and under-coordinated point defects, thereby significantly improving the film quality and device performance of the perovskite absorber. The other alkyl diamine molecule is used for interface passivation, which repels minority carriers and reduces contact-induced interface recombination achieved through field effect passivation. The two molecules work together for passivation, with surface passivation and interface passivation acting simultaneously to reduce carrier recombination on the surface and interface and improve the ability to extract electrons.

[0072] The present invention will be described below in the form of specific examples. It should be understood that these examples are merely illustrative and are not intended to limit the scope of the present invention. The methods, reagents and materials used in the examples are, unless otherwise stated, conventional methods, reagents and materials in the art. The raw material compounds in the examples can all be purchased through commercial routes.

[0073] Example 1

[0074] 1. Prepare 100nm ITO transparent electrode by magnetron sputtering;

[0075] 2. Prepare 15nm NiOx hole transport layer by magnetron sputtering;

[0076] 3. Prepare 500nm perovskite layer by coating method: configure 1.7mol / L concentration of Cs0.22 FA 0.78 Pb(I 0.85 Br 0.15 )3, dissolved in DMF / NMP (v:v=17:3) solvent, coated at a coating rate of 20 mm / s, then blown with an air knife to remove excess solvent until it turns dark yellow. Then annealed at 120°C for 30 min;

[0077] 4. Prepare a 1 nm passivation layer by coating: prepare a mixed solution of 0.5 mg / mL p-trifluoromethylphenylethylamine hydrochloride and 0.5 mg / mL propylenediamine hydroiodide, dissolve it in an isopropanol / IPA solvent, coat it at a coating rate of 20 mm / s, and then anneal at 100°C for 5 min;

[0078] 5. Prepare the electron transport layer by vacuum evaporation: 13nm C60 / 15nm SnO2 / 50nm indium-doped tin oxide (IZO);

[0079] 6. Prepare 200nm silver electrode by vacuum evaporation method.

[0080] Example 2

[0081] The difference from Example 1 is that in step 4, a 0.5:0.5 mg / mL IPA solution of p-fluorophenethyl hydroiodide:propylenediamine hydroiodide is used for coating.

[0082] Example 3

[0083] The difference from Example 1 is that in step 4, a 0.5:0.5 mg / mL IPA solution of p-trifluoromethylphenethylamine hydrochloride:butylene diamine hydroiodide is used for coating.

[0084] Example 4

[0085] The difference from Example 1 is that in step 4, a 0.5:0.5 mg / mL IPA solution of p-fluorophenethyl hydroiodide:butylene diamine hydroiodide is used for coating.

[0086] Example 5

[0087] The difference from Example 1 is that in step 4, a 0.5:0.5 mg / mL IPA solution of p-trifluoromethylphenylethylamine hydrochloride:ethylenediamine hydroiodide is used for coating.

[0088] Example 6

[0089] The difference from Example 1 is that in step 4, a 3:3 mg / mL IPA solution of p-trifluoromethylphenylethylamine hydrochloride:ethylenediamine hydroiodide is used for coating.

[0090] Example 7

[0091] The difference from Example 1 is that in step 4, a 1.5:1.5 mg / mL IPA solution of p-trifluoromethylphenylethylamine hydrochloride:ethylenediamine hydroiodide is used for coating.

[0092] Comparative Example 1

[0093] The difference from Example 1 is that in step 4, 0.5 mg / mL IPA solution of p-trifluoromethylphenethylamine hydrochloride is used for coating.

[0094] Comparative Example 2

[0095] The difference from Example 1 is that in step 4, 0.5 mg / mL IPA solution of p-fluorophenethyl hydroiodide is used for coating.

[0096] Comparative Example 3

[0097] The difference from Example 1 is that in step 4, 0.5 mg / mL IPA solution of propylenediamine hydroiodide is used for coating.

[0098] Comparative Example 4

[0099] The difference from Example 1 is that in step 4, 0.5 mg / mL IPA solution of butanediamine hydroiodide is used for coating.

[0100] Comparative Example 5

[0101] The difference from Example 1 is that in step 4, a 5:5 mg / mL IPA solution of p-trifluoromethylphenylethylamine hydrochloride:ethylenediamine hydroiodide is used for coating.

[0102] Comparative Example 6

[0103] The difference from Example 1 is that in step 4, a 0.5:0.5 mg / mL IPA solution of 9-octadecene ammonium iodide (oleylamine iodide):ethylenediamine hydroiodide is used for coating.

[0104] Comparative Example 7

[0105] The difference from Example 1 is that in step 4, 0.5:0.5 mg / mL IPA solution of guanidine bromide:p-fluorophenethyl hydroiodide is used for coating.

[0106] Test Example 1

[0107] The perovskite solar cells prepared in the examples and comparative examples were subjected to photoelectric tests, the test light intensity was the AM1.5G standard light intensity, the test temperature was 25±1° C., and the results were shown in Table 1 below:

[0108]

[0109] Although the present invention has been disclosed as above in the form of a preferred embodiment, it is not intended to limit the present invention. Anyone familiar with this technology can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be based on the definition of the claims.

Claims

1. A perovskite passivation layer, characterized in that: The perovskite passivation layer is arranged on the surface of the perovskite absorption layer, and the material of the perovskite passivation layer contains alkyl diamine compounds and phenethyl ammonium compounds; the phenethyl ammonium compounds are selected from p-trifluoromethyl phenethylamine hydrochloride and / or p-fluorophenethyl hydroiodide.

2. The perovskite passivation layer according to claim 1, characterized in that: The alkyl diamine compound is selected from one or more of ethylenediamine hydroiodide, propylenediamine hydroiodide and butylenediamine hydroiodide.

3. The perovskite passivation layer according to claim 1, characterized in that: The thickness of the perovskite passivation layer is 0.2-1 nm; The thickness of the perovskite absorption layer is 300-600nm; The active material of the perovskite absorption layer contains ABX3 compounds, wherein A is a monovalent cation, for example, a mixture of one or several monovalent cations selected from cesium, rubidium, methylamine, and methylamidine; B is a divalent cation, for example, a mixture of one or several divalent cations selected from lead, copper, zinc, gallium, tin, and calcium; X is a monovalent anion, for example, a mixture of one or several monovalent anions selected from iodine, bromine, chlorine, fluorine, and thiocyanate; preferably, the active material of the perovskite absorption layer is selected from CsFAPbI3, MAPbI3, CsPbI3, and CsxFA 1-x Pb(IyBr 1-y )3 or more.

4. A method for preparing a perovskite passivation layer according to any one of claims 1 to 3, characterized in that: The method comprises the following steps: S1. preparing a perovskite passivation precursor solution: mixing an alkyl diamine compound, a phenethyl ammonium compound and a solvent to obtain a perovskite passivation precursor solution; S2. coating the perovskite passivation precursor solution on the surface of the perovskite absorption layer by a solution method, and annealing to obtain a perovskite passivation layer.

5. The method for preparing a perovskite passivation layer according to claim 4, characterized in that: The preparation method has one or more of the following characteristics: The mass concentration of the alkyl diamine compound is 0.5-3 mg / mL; The mass concentration of phenethylammonium compounds is 0.5-3 mg / mL; The solvent is selected from one or more of isopropanol, ethanol, chloroform and phenethyl ether; The solution method is a slit coating method and / or a blade coating method; The coating speed is 15-25 mm / s; The annealing process conditions are: annealing temperature is 80-120° C., and annealing time is 3-10 min.

6. A perovskite solar cell, characterized in that: The perovskite solar cell comprises a substrate, a transparent conductive electrode, a hole transport layer, a perovskite absorption layer, a perovskite passivation layer according to any one of claims 1 to 3, an electron transport layer and an electrode arranged in sequence from bottom to top.

7. The perovskite solar cell according to claim 5, characterized in that The material of the transparent conductive electrode is selected from ITO or FTO; and / or The thickness of the transparent conductive electrode is 80nm-120nm.

8. The perovskite solar cell according to claim 5, characterized in that The perovskite solar cell has one or more of the following features: The material of the hole transport layer is selected from one or more of nickel oxide, polytriarylamine, poly(3,4-ethylenedioxythiophene) and poly(styrene sulfonic acid); The thickness of the hole transport layer is 10nm-30nm; The material of the perovskite absorption layer is selected from CsFAPbI3, MAPbI3, CsPbI3 and CsxFA 1-x Pb(IyBr 1-y )3 or more; The thickness of the perovskite absorption layer is 300nm-600nm.

9. The perovskite solar cell according to claim 5, characterized in that: The perovskite solar cell has one or more of the following features: The material of the electron transport layer is selected from one or more of C60, TiO2, ZnO, WO3, SnO2, Zn2SnO4, fullerene and its derivatives; The thickness of the electron transport layer is 10nm-30nm; The material of the electrode is selected from one or more of copper, aluminum and silver; The thickness of the electrode is 90nm-400nm. 10.Select from the following applications: (1) Use of the perovskite passivation layer according to any one of claims 1 to 3 in stabilizing the perovskite structure or preparing a perovskite solar cell; (2) Application of alkyl diamine compounds and phenethyl ammonium compounds in the simultaneous passivation of the surface and interface of the perovskite absorber layer; (3) Application of alkyl diamine compounds and phenethyl ammonium compounds in the preparation of perovskite solar cells.

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