Method and device for producing SiC solid material

Abstract

The aforementioned object is achieved according to a SiC production reactor (850), where the SiC production reactor (850) comprises at least: a process chamber (856) and a gas inlet unit (866), where the process chamber (856) is surrounded by at least a bottom wall portion, in particular a bottom plate (862) or a bottom plate wall portion, a side wall portion (864a) and a top wall portion (864b); a gas inlet unit (866) for feeding one or more feed media into the reaction space of the process chamber (856) to generate a source medium, in which the gas inlet unit (866) is coupled to at least one feed medium source (851), in which the Si and C feed medium source (851) is configured to provide at least Si and C, in particular SiCl3 (CH3), and in which the carrier gas feed medium source (853) provides a carrier gas, in particular H2, in which the gas inlet unit (866) is coupled to the at least one feed medium source (851). Or wherein the gas inlet unit (866) is coupled to at least two feed medium sources (851, 852), where the Si feed medium source (851) is configured to provide at least Si, and where the C feed medium source (852) provides at least C, in particular natural gas, methane, ethane, propane, butane and / or acetylene, and where the carrier gas medium source (853) is configured to provide a carrier gas, in particular H2, and where the gas inlet unit (866) is coupled to at least two feed medium sources (851, 852), where the Si feed medium source (851) is configured to provide at least Si, and where the C feed medium source (852) is configured to provide at least C, in particular natural gas, methane, ethane, propane, butane and / or acetylene. At least one SiC growth substrate surface (2204) is formed within the process chamber (856) by the wall surface portion (2270), a heating unit (2230) for non-electrically generating heat is provided, where the heating unit (2230) is configured to heat at least the SiC growth substrate surface (2204) to a temperature above 1300 DEG C.

Description

Background Art

[0001] Power electronics based on silicon carbide (SiC) wafers outperform those based on traditional silicon (Si) wafers, primarily because SiC has a wider bandgap, enabling it to operate at higher voltages, temperatures, and frequencies. As the global transition to electric vehicles (EVs) gains momentum, interest in high-performance power electronics based on silicon carbide is growing, but the price of SiC wafers remains much higher than that of Si wafers.

[0002] Currently, the main method for commercial production of SiC single crystals is physical vapor transport (PVT).

[0003] Currently, SiC source materials used in industry are produced by the commercial Acheson process and then further purified by powdering and acid leaching. The Acheson process is the only known method for producing SiC source materials on an industrial scale. Acid leaching is used to extract trace metals from SiC, but it can only penetrate to a depth of less than about 1 micron from the surface of the particles. Therefore, the particles need to be small enough so that this penetration layer accounts for a large enough proportion of the total volume of the particles. Therefore, the average particle size of the powdered SiC particles usually needs to reach 200 to 300 microns. At this average particle size, the purity of this material can only reach about 99.99% or 99.999% (referred to as 4N or 5N purity, respectively).

[0004] In some cases, SiC source materials are produced by using silicon powder (especially mixed with graphite powder and sintered). Powdered SiC materials increase the surface area and are easily contaminated when handled and exposed to air. The main contaminants are trace metals, nitrogen and oxygen.

[0005] Although these acid-leached or sintered SiC materials have only a moderate 4N or 5N purity, they are expensive and significantly increase the overall cost of SiC wafers. The moderate purity also leads to high wafer costs because impurities cause crystal defects, and defective crystals must be discarded instead of being cut into wafers. In other words, impurities in the source material result in low crystal yields.

[0006] Trace metals present in SiC source materials are believed to be the main cause of crystal defects in single-crystal SiC boules grown using the PVT method. Currently, the quality of single-crystal SiC boules is several orders of magnitude lower than that of other semiconductor crystals such as silicon or gallium arsenide (GaAs) in terms of crystal defects (such as dislocations). These crystal defects can cause unnecessary electrical shorts in SiC electrical devices (vertical devices in most cases) and reduce the yield of electrical devices. Therefore, better solutions must be found to prevent crystal defects caused by impurities in the source materials.

[0007] In addition, metal impurities in SiC wafers made from single-crystal SiC ingots can interact with subsequent implantation and doping techniques to create SiC electrical devices, which can cause device failure and reduce the yield of electrical devices.

[0008] In addition, impurity (especially nitrogen) concentrations or impurity bands will appear in the crystal rod, resulting in wafers at different heights in the same crystal rod having conductivity that may be outside the required range, or differences between one side of the wafer and the other. For semi-insulating SiC wafers for RF applications, extremely low conductivity is required, so trace metals and nitrogen at very low concentrations are allowed in the wafer. For conductive SiC wafers for power applications, a certain amount of conductivity is required. But by providing nitrogen to the PVT crucible during the entire growth time, this conductivity can be uniformly achieved throughout the SiC crystal rod.

[0009] The shape factor of the SiC source material is also important in PVT growth. Powder source materials provide a high initial surface area for sublimation and therefore have a high initial sublimation rate. A high sublimation rate may be uneconomical if all the sublimated SiC species cannot be incorporated into the crystal and becomes a polycrystalline deposit that parasitizes on other parts of the crucible. Worse, a high concentration of SiC species in front of the crystal growth face may cause gas phase nucleation and form amorphous or polycrystalline inclusions in the single crystal ingot. Over time, powder source materials tend to sinter together to form a single piece of material with a greatly reduced surface area, so the sublimation rate decreases. The spiking and tailing phenomena that occur during the sublimation of powder source materials can lead to a slower overall rate of crystal growth and increase the likelihood of defects in the crystal. Finally, the tap density of powder source materials is low, about 1.2g / cm 3 , which limits the mass of material that can be loaded into the crucible and therefore the size of the crystals that can be grown.

[0010] Document GB1128757 discloses a method for depositing a thin SiC coating. However, the teaching of GB1128757 does not involve a method for mass production of SiC as a PVT source material. Document US2007 / 0251455A1 discloses a CVD process for producing polycrystalline silicon. However, due to the different temperature profiles, source materials and chemical compositions produced during SiC deposition, document US2007 / 0251455A1 describes a significantly different subject matter.

[0011] DE1184738 (B) discloses a method for producing silicon carbide crystals in single-crystal and polycrystalline form by reacting silicon halide with carbon tetrachloride in a molar ratio of 1:1 on a heated graphite body in the presence of hydrogen. In this process, a mixture of 1 volume fraction of silicon chloroform, 1 volume fraction of carbon tetrachloride and hydrogen is first flowed through the graphite body at a flow rate of 400 to 600 liters / hour until a dense silicon carbide layer is formed on the graphite body, and then flows through the deposition body at a flow rate of 250 to 350 liters / hour at a temperature of 1300° C. to 2000° C., in particular 1500° C. to 1600° C.

[0012] The downside of this existing technology is that it does not meet today's demand for cheap production of high-purity SiC in a large-scale industrial process. SiC is used in many areas of technology, especially in power applications and / or electric vehicles, to improve efficiency. In order for products requiring SiC to reach the mass market, manufacturing costs must be reduced and / or quality improved. Summary of the invention

[0013] It is therefore an object of the present invention to provide a low-cost supply of silicon carbide (SiC). Additionally or alternatively, high purity SiC should be provided. Additionally or alternatively, SiC should be provided very quickly. Additionally or alternatively, SiC should be able to be produced very efficiently. Additionally or alternatively, single crystal SiC should be produced with advantageous properties.

[0014] The aforementioned objects are achieved by a SiC production reactor according to claim 1, in particular a SiC production reactor for producing PVT source materials. The SiC production reactor preferably comprises at least a process chamber and a gas inlet unit, wherein the process chamber is at least surrounded by a bottom wall portion (in particular a bottom plate or a bottom plate wall portion), a side wall portion and a top wall portion; the gas inlet unit is used to feed one or more feed media into the reaction space of the process chamber to generate a source medium, wherein the gas inlet unit is preferably coupled to at least one feed medium source. The at least one feed medium source is preferably a Si and C feed medium source, which is preferably configured to provide at least Si and C, in particular to provide SiCl3 (CH3), and wherein a carrier gas feed medium source is preferably provided, which is configured to provide a carrier gas, in particular to provide H2. Alternatively, the gas inlet unit is preferably coupled to at least two feed medium sources, wherein the at least two feed medium sources preferably include a Si feed medium source, which is preferably configured to provide at least Si, and wherein the C feed medium source is preferably configured to provide at least C, in particular to provide natural gas, methane, ethane, propane, butane and / or acetylene, and wherein a carrier gas medium source is preferably provided, which carrier gas medium source preferably provides a carrier gas, in particular to provide H2. The SiC production reactor further comprises a plurality of SiC growth substrates, in particular more than 3 or more than 4 or more than 6 or more than 8 or more than 16 or more than 32 or more than 64 or up to 128 or up to 256 SiC growth substrates, arranged in the process chamber for depositing SiC, wherein a first SiC growth substrate of the plurality of SiC growth substrates comprises at least a first growth face portion facing a first direction and a second growth face portion facing a second direction, wherein the second direction makes an angle of less than 20°, in particular less than 10° or less than 5° with a direction opposite to the first direction, wherein a second SiC growth substrate of the plurality of SiC growth substrates comprises at least a third growth face portion facing a third direction and a fourth growth face portion facing a fourth direction, wherein the third direction makes an angle of less than 20°, in particular less than 10° or less than 5° with the first direction, wherein a third SiC growth substrate of the plurality of SiC growth substrates comprises at least a fifth growth face portion facing a fifth direction and a sixth growth face portion facing a sixth direction, wherein the fifth direction makes an angle of less than 20°, in particular less than 10° or less than 5° with the third direction. The fourth growth surface portion preferably covers at least 50% of the first growth surface portion in the first direction, wherein a size of the fourth growth surface portion is at least 80% of a size of the first growth surface portion, in particular larger than 90% or 95% of a size of the first growth surface portion, and / or the sixth growth surface portion preferably covers at least 50% of the third growth surface portion in the fifth direction, wherein a size of the sixth growth surface portion is at least 80% of a size of the third growth surface portion, in particular larger than 90% or larger than 95% of a size of the third growth surface portion.

[0015] This solution is beneficial because a large surface is already present at the start of a production run, so SiC can be deposited quickly. In addition, since the multiple growth faces have a significant overlap, the heat radiation radiating from one growth face heats the overlapping growth faces. As a result, heat losses can be reduced, so that the entire production process can be completed with less energy.

[0016] The distance between the relative surfaces is preferably a determined distance, wherein the distance can save a lot of energy and can achieve mass production that is conducive to long growth rates, thereby producing thick deposition and wider spacing. Therefore, the preferred arrangement of the growth surface portions that are respectively opposite or overlapped between the plates is between 10cm and 50cm, in particular between 10cm and 40cm, preferably between 10cm and 30cm, or between 20cm and 50cm, preferably between 30cm and 50cm, and the deposition thickness of SIC is preferably no more than 1 / 3 of the spacing on each side. This means that at the end of the run, it is preferred that no more than 2 / 3 of the initial spacing is filled with SiC, and 1 / 3 is preferably left for gas supply. Other arrangements can also be used to optimize the gas flow and gas conversion rate during the process. Highly preferably, the deposition of SiC is less than 1 / 3 on each side to produce beneficial gas flux and gas turbulence.

[0017] Further preferred embodiments are the subject matter of the following description part and / or of the dependent claims.

[0018] According to a preferred embodiment of the present invention, at least the first SiC growth substrate covers the first heating unit from at least two sides, wherein the first heating unit and the first SiC growth substrate are configured to be non-destructively separable from each other. This embodiment is beneficial in that, because the heating unit does not have to be part of the SiC growth substrate, heating can be performed in a manner different from heating produced by conducting electrical energy through the SiC growth substrate. Electrical heating requires sufficient electrical infrastructure, which is very expensive and therefore increases the overall production costs. Therefore, due to the present invention, capital expenditures can be significantly reduced.

[0019] According to another preferred embodiment of the present invention, the first SiC growth substrate is formed by a hollow shell, wherein the heating unit is located inside the hollow shell. This embodiment is beneficial in that the heating unit radiates heat to multiple wall portions of the hollow shell, thereby heating the walls of the hollow shell, and thus heating the outer surface portions of the hollow shell and making them serve as SiC growth surfaces.

[0020] According to another preferred embodiment of the present invention, the first SiC growth substrate is formed by a foil or supported by a SiC growth foil. This embodiment is beneficial in that the SiC is deposited on the foil and thus increases the stability of the foil. Since the SiC is deposited on the foil, the SiC can be removed from the process chamber by removing the foil from the process chamber.

[0021] According to another preferred embodiment of the present invention, the foil is arranged around at least two surface portions of the hollow shell of the hollow shell, respectively, wherein the heating unit is located inside the hollow shell. This embodiment is beneficial in that: because on the one hand, the hollow shell protects the heating unit from the influence of SiC, on the other hand, the hollow shell can support the foil, thereby allowing SiC to be deposited on the foil in a predetermined manner. The heating unit is preferably arranged inside the hollow shell in a way that a defined temperature distribution is set or can be set. Due to the defined temperature distribution, the outer surface portion of the hollow shell is covered by the foil and heated. The remaining surface portion of the hollow shell is preferably heated less, in particular, the temperature is reduced by more than 5°C or the temperature is reduced by more than 10°C, or the temperature is reduced by more than 20°C or the temperature is reduced by more than 50°C. Compared with the part where the foil does not contact the hollow shell, the wall of the hollow shell can be thinner in the part where the foil must be placed. Thinner preferably means thinner by more than 1mm, highly preferably thinner by more than 3mm, most preferably thinner by more than 5mm or 9mm or 15mm.

[0022] According to another preferred embodiment of the present invention, the foil and / or the hollow shell are made of CFC (carbon fiber composite material) material, in particular the foil and / or the hollow shell contain more than 75% by mass of CFC material, or more than 90% by mass of CFC material, or more than 95% by mass of CFC material, or more than 99% by mass of CFC material, or up to 100% by mass of CFC material. The CFC material is preferably formed into a sheet, wherein the hollow shell and / or the foil is preferably formed of a plurality of sheets or a sheet-like structure. Alternatively, the foil and / or the hollow shell can be made of molybdenum or can include molybdenum.

[0023] Therefore, according to another preferred embodiment of the present invention, the hollow shell and / or the foil and / or the wall member or the SiC growth substrate comprises carbon fibers. The benefit of this embodiment is that the carbon fibers can be heated to a temperature above 1500°C or above 1800°C or between 1400°C and 2000°C. In addition, the carbon fibers are able to withstand high tensile loads. Carbon fibers have a number of advantages, including high stiffness, high tensile strength, high strength-to-weight ratio, high chemical resistance, high temperature resistance and low thermal expansion. The atomic structure of carbon fibers is similar to that of graphite, consisting of sheets of carbon atoms (graphene sheets) arranged in a regular hexagonal pattern, the difference being the staggered manner of these sheets. Graphite is a crystalline material in which the sheets are stacked parallel to each other in a regular manner. The intermolecular forces between the sheets are relatively weak van der Waals forces, which give graphite its soft and brittle properties.

[0024] According to another preferred embodiment of the present invention, the hollow shell and / or the foil and / or the wall member or the SiC growth substrate is formed from a carbon fiber composite material. This embodiment is beneficial because the fiber orientation of the carbon fiber composite material covers at least two directions, which also allows compensation of forces in multiple directions. An example of a preferred carbon fiber composite material is SIGRABOND Standard produced by SGL Carbon GmbH.

[0025] Hollow shells and / or foils and / or wall members or SiC growth substrates formed of carbon fiber composite materials are preferred embodiments of the present invention and preferably have a tensile strength of more than 50 MPa (see DIN IEC 60413 / 501) and / or a flexural strength of more than 50 MPa. This embodiment is advantageous in that high tensile loads caused by high temperature differences due to thick SiC shells can be compensated.

[0026] According to another preferred embodiment of the present invention, a heating unit for non-electric heat generation is provided, wherein the heating unit is configured to heat the SiC growth substrate to a temperature above 1300°C, and preferably between 1300°C and 2000°C or between 1300°C and 1800°C. The benefit of this embodiment is that, for example, gas, in particular natural gas, H2 and / or biogas and / or methane, can be burned to generate heat. The flame generated when burning the gas can be used to directly heat the wall member. Alternatively, the flame can be used to heat a heat transfer medium or to generate a heat transfer medium, which is directed to the wall member to heat the wall member. The heating unit based on the combustion of gas does not require transistors, transformers, etc., so the infrastructure costs are significantly reduced. In addition, the maintenance costs are low.

[0027] According to another preferred embodiment of the invention, the heating unit forms a fluid guiding device for guiding a fluid heated to a temperature above 1300° C. and preferably between 1300° C. and 2000° C. or between 1300° C. and 1800° C. to heat the wall member and thus the wall surface portion. This embodiment is advantageous in that the heat distribution can be adjusted in a very precise manner in case the fluid is heated and circulated through the heat conducting device, wherein the heat conducting device is preferably formed by at least one pipe, wherein the pipe preferably comprises graphite or CFC material or molybdenum.

[0028] According to another preferred embodiment of the present invention, the heating unit forms a flow guide device for guiding gas to at least one defined combustion space to burn the guided gas to heat the wall member and thus heat the wall surface portion. This embodiment is beneficial in that the wall member can be heated very quickly.

[0029] The above object is also achieved by a SiC production method according to claim 4, in particular a SiC production method for producing 3C-SiC. The method preferably comprises the following steps or at least the following steps: providing a SiC production reactor, wherein the SiC production reactor comprises a process chamber and a gas inlet unit, wherein the process chamber is at least surrounded by a bottom wall portion (in particular a bottom plate or a bottom plate wall portion), a side wall portion and a top wall portion; the gas inlet unit is used to feed one or more feed media into the reaction space of the process chamber to generate a source medium, wherein the gas inlet unit is preferably coupled to at least one feed medium source, wherein the Si and C feed medium sources are preferably configured to provide at least Si and C, in particular SiCI3 (CH3), and wherein the carrier gas feed medium source provides a carrier gas, in particular H2, or wherein the gas inlet unit is preferably coupled to at least two feed medium sources, wherein the Si feed medium source is preferably configured to provide at least Si, and wherein the C feed medium source provides at least C, in particular natural gas, methane, ethane, propane, butane and / or acetylene, wherein the carrier gas medium source is configured to provide a carrier gas, in particular H2.The SiC production reactor preferably further comprises a plurality of SiC growth substrates, in particular more than 3 or more than 4 or more than 6 or more than 8 or more than 16 or more than 32 or more than 64 or more than 128 or up to 256 SiC growth substrates, arranged inside the process chamber for depositing SiC, wherein a first SiC growth substrate of the plurality of SiC growth substrates comprises at least a first growth face portion facing a first direction and a second growth face facing a second direction, wherein the second direction makes an angle of less than 20°, in particular less than 10° or less than 5° with a direction opposite to the first direction, wherein a second SiC growth substrate of the plurality of SiC growth substrates comprises at least a third growth face portion facing a third direction, wherein the third direction makes an angle of less than 20°, in particular less than 10° or less than 5° with the first direction, and wherein the second SiC growth substrate comprises a fourth growth face portion facing a fourth direction, wherein a third SiC growth substrate of the plurality of SiC growth substrates comprises at least a first growth face portion facing a fifth direction a fifth growth face portion, wherein the fifth direction makes an angle of less than 20°, particularly less than 10° or less than 5° with the third direction, and wherein the third SiC growth substrate comprises a sixth growth face portion facing the sixth direction, wherein the fourth growth face portion covers at least 50% of the first growth face portion in the first direction, wherein a size of the fourth growth face portion is at least 80% of a size of the first growth face portion, particularly more than 90% or 95% of the first growth face portion, wherein the sixth growth face portion covers at least 50% of the third growth face portion in the fifth direction, wherein a size of the sixth growth face portion is at least 80% of a size of the third growth face portion, particularly more than 90% or 95% of the size of the third growth face portion, and heating a plurality of SiC growth substrates, feeding one or more feed media into the reaction space, and depositing SiC on the first growth face portion, the second growth face portion, the third growth face portion, the fourth growth face portion, the fifth growth face portion, and the sixth growth face portion.

[0030] The above object is also achieved by the SiC production reactor according to claim 5. The SiC production reactor preferably comprises at least a process chamber and a gas inlet unit, wherein the process chamber is at least surrounded by a bottom wall portion (especially a bottom plate or a bottom plate wall portion), a side wall portion and a top wall portion; the gas inlet unit is used to feed one or more feed media into the reaction space of the process chamber to generate a source medium. At least one feed medium source is preferably a Si and C feed medium source, which is preferably configured to provide at least Si and C, especially to provide SiCl3 (CH3), and wherein a carrier gas feed medium source is preferably provided, which is configured to provide a carrier gas, especially to provide H2. Alternatively, the gas inlet unit is preferably coupled to at least two feed medium sources, wherein the at least two feed medium sources preferably include a Si feed medium source, which is preferably configured to provide at least Si, and wherein the C feed medium source is preferably configured to provide at least C, especially to provide natural gas, methane, ethane, propane, butane and / or acetylene, and wherein a carrier gas medium source is preferably provided, which carrier gas medium source preferably provides a carrier gas, especially to provide H2. At least one SiC growth substrate surface is formed inside the process chamber by the wall surface portion. The SiC production reactor preferably also includes a heating unit for non-electrically generating heat, wherein the heating unit is configured to heat the SiC growth substrate surface to a temperature above 1300° C., preferably to a temperature between 1300° C. and 2000° C. or between 1300° C. and 1800° C.

[0031] This solution is beneficial because it significantly reduces infrastructure costs for electronic components such as transformers, transistors, etc. In addition, if the heating device generates heat non-electrically, maintenance costs are lower.

[0032] According to another preferred embodiment of the present invention, the heating unit is at least partially surrounded by a wall member forming a wall surface portion. This embodiment is beneficial in that the heating unit preferably transfers heat to the wall member by radiation. However, alternatively or additionally, the heating unit may contact the wall member to transfer heat to the wall member by heat conduction.

[0033] According to another preferred embodiment of the present invention, the wall surface portion is a part of a side wall portion and / or a top wall portion, or a part of a wall member surrounded by a side wall portion and a top wall portion. This embodiment is advantageous in that a plurality of wall portions, in particular wall portions facing in different directions, can be heated and used for the deposition of SiC. Thus, one or more heating units can be operated simultaneously to heat different surface portions.

[0034] According to another preferred embodiment of the invention, the heating unit forms a fluid guide device for guiding a fluid heated to a temperature above 1300° C. and preferably between 1300° C. and 2000° C. or between 1300° C. and 1800° C. to heat the wall member and thus the wall surface portion. This embodiment is advantageous in that the heat distribution can be precisely controlled. Furthermore, the heated fluid stores some heat and allows compensation for air flow interruptions.

[0035] According to another preferred embodiment of the present invention, the heating unit forms a fluid guide device for guiding the gas to at least one defined combustion space to burn the guided gas to heat the wall member and thus heat the wall surface portion. This embodiment is beneficial in that the temperature of the wall member can be increased quickly, in particular in less than 5 minutes, less than 2 minutes or less than 1 minute.

[0036] The above object is also achieved by a SiC production method according to claim 10, in particular a SiC production method for producing 3C-SiC. The SiC production method preferably comprises at least the following steps: providing a SiC production reactor, wherein the SiC production reactor comprises a process chamber and a gas inlet unit, wherein the process chamber is at least surrounded by a bottom wall portion (in particular a bottom plate or a bottom plate wall portion), a side wall portion and a top wall portion, and the gas inlet unit is used to feed one or more feed media into the reaction space of the process chamber to generate a source medium. The gas inlet unit is preferably coupled to at least one feed medium source, wherein the Si and C feed medium sources are preferably configured to provide at least Si and C, in particular to provide SiCl3 (CH3), and wherein the carrier gas feed medium source provides a carrier gas, in particular to provide H2, or wherein the gas inlet unit is preferably coupled to at least two feed medium sources, wherein the Si feed medium source is preferably configured to provide at least Si, and wherein the C feed medium source provides at least C, in particular to provide natural gas, methane, ethane, propane, butane and / or acetylene, and wherein the carrier gas medium source is configured to provide a carrier gas, in particular to provide H2. Preferably, at least one SiC growth substrate surface is formed inside the process chamber by the wall surface portion. The method further comprises the step of providing a heating unit for non-electrically generating heat. The method preferably further comprises the step of heating the at least one SiC growth substrate surface to a temperature above 1300° C. (preferably a temperature between 1300° C. and 2000° C. or between 1300° C. and 1800° C.) by means of the heating unit, the step of feeding one or more feed media into the reaction space, and the step of depositing SiC on the at least one SiC growth substrate surface.

[0037] According to another preferred embodiment of the present invention, the gas inlet unit is coupled to at least one feed medium source, wherein one of the feed medium sources is a Si and C feed medium source, wherein the Si and C feed medium source provides at least Si and C, in particular SiCl3 (CH3), and wherein the carrier gas feed medium source provides a carrier gas, in particular H2, or wherein the gas inlet unit is coupled to at least two feed medium sources, wherein one of the two feed medium sources is a Si feed medium source, wherein the Si feed medium source provides at least Si, in particular Si gas conforming to the general formula SiH4-yXy (X=[Cl,F,Br,J] and y=[0..4]), and the other of the two feed medium sources is a C feed medium source, wherein the C feed medium source provides at least C, in particular natural gas, methane, ethane, propane, butane and / or acetylene, and wherein the carrier gas medium source provides a carrier gas, in particular H2.

[0038] Alternatively, the first feed medium is a Si feed medium, in particular a Si gas conforming to the general formula SiH4-yXy (X = [Cl, F, Br, J] and y = [0..4]), wherein the gas inlet unit is preferably coupled to at least one feed medium source, wherein preferably the Si and C feed medium source provides at least Si and C, in particular SiCl3 (CH3), and wherein the carrier gas feed medium source provides a carrier gas, in particular H2, or wherein the gas inlet unit is preferably coupled to at least two feed medium sources, wherein the Si feed medium source preferably provides at least Si, in particular the Si feed medium source provides the first feed medium, wherein the first feed medium is a Si feed medium, in particular conforming to the general formula SiH4-yXy Si gas Xy (X = [Cl, F, Br, J] and y = [0..4]), wherein a C feed medium source provides at least C, in particular a C feed medium source that provides a second feed medium, wherein the second feed medium is a C feed medium, in particular natural gas, methane, ethane, propane, butane and / or acetylene, and wherein a carrier gas medium source provides a third feed medium, wherein the third feed medium is a carrier gas, in particular H2.

[0039] Natural gas is preferably defined as a gas having multiple components, wherein the largest component is methane, in particular more than 50 mass % is methane, preferably more than 70 mass % is methane, more preferably more than 90 mass % is methane, most preferably more than 95 mass % or more than 99 mass % is methane.

[0040] Therefore, the SiC production reactor or CVD SiC device is preferably also equipped with a feed gas unit or a medium supply unit for supplying feed gas to the gas inlet unit. The feed gas unit or the medium supply unit ensures that the feed gas is heated to a suitable temperature and mixed in a suitable proportion before being pumped into the CVD reactor or the SiC production reactor (especially the SiC PVT source material production reactor). The feed gas unit or the medium supply unit starts with a pipeline and a pump, which transports the feed gas from its respective source (especially a storage tank) to the vicinity of the CVD reactor or the SiC production reactor (especially the SiC PVT source material production reactor). In this article, the mass flow rate of each feed gas is preferably controlled by a separate mass flow meter, which is connected to the entire process control device so that the correct proportion of various feed gases can be achieved. Then, the separate feed gases are preferably mixed in a mixing unit (especially a mixing unit of a medium supply unit) and pumped into the CVD reactor or the SiC production reactor (especially the SiC PVT source material production reactor) through the gas inlet unit (especially through multiple gas inlets of the gas inlet unit). Preferably, the feed gas unit or the medium supply unit is capable of mixing three feed gases, including a Si-containing gas (e.g., STC and / or TCS), a C-containing gas (e.g., methane), and a carrier gas (e.g., H). In another preferred embodiment of the present invention, there is a feed gas containing both Si and C (e.g., MTCS), and the feed gas unit mixes two gases (i.e., MTCS and H) instead of three gases. It should be noted that STC, TCS, and MTCS are all liquid at room temperature. Therefore, a preheater may be required upstream of the gas inlet unit (especially upstream of the feed gas unit or the medium supply device) to first heat these feed liquids to make them feed gases so as to be mixed with other feed gases.

[0041] Preferably, the gases are mixed so that the atomic ratio between Si and C is 1:1. In some cases, it may be more preferable to mix the gases so that the atomic ratio between Si and C is different. Sometimes, it is desirable to keep the deposition surface at the higher end of the deposition temperature range of 1300°C to 2000°C, in particular 1300°C to 1600°C to achieve a faster deposition rate. However, in this case, there may be excess C deposition in the SiC. This can be adjusted by mixing the feed gas so that the Si:C ratio is higher than 1:1, preferably 1:1.1 or 1:1.2 or 1:1.3. On the contrary, it is sometimes desirable to keep the deposition surface at the lower end of the deposition temperature range to achieve slow stress-free deposition. In this case, there may be excess Si deposition in the SiC. This can be adjusted by mixing the feed gas so that the Si:C ratio is lower than 1:1, preferably 1:0.9 or 1:0.8 or 1:0.7.

[0042] Another important consideration for the feed gas mixture is the atomic ratio of H to Si and C. Excess H dilutes Si and C and reduces the deposition rate. Excess H also increases the amount of exhaust gas discharged from the CVD reactor or SiC production reactor (particularly the SiCPVT source material production reactor) and complicates the treatment and recovery of these exhaust gases. On the other hand, insufficient H slows down the chemical reaction chain that leads to SiC deposition. The molar ratio of H2 to Si is preferably in the range of 2:1 to 10:1, more preferably between 4:1 and 6:1.

[0043] According to another preferred embodiment of the present invention, a control unit for setting the supply of one or more feed media into the process chamber is provided, wherein the control unit is configured to set the feed medium supply amount between a minimum feed medium supply amount [mass] per minute and a maximum feed medium supply amount [mass] per minute, wherein the minimum feed medium supply amount [mass] per minute corresponds to a minimum Si deposition amount [mass] and a minimum C deposition amount [mass] at a defined mass growth rate, wherein the defined mass growth rate is greater than a mass growth rate of the SiC growth surface of 0.1 g per square centimeter per hour, wherein the maximum feed medium supply amount per minute is at most 30 mass % or at most 20 mass % or at most 10 mass % or at most 5 mass % or at most 3 mass % higher than the minimum feed medium supply amount. This embodiment is advantageous in that the supply of the feed medium can be controlled according to the desired SiC conditions.

[0044] According to another preferred embodiment of the present invention, the control unit is configured to control the heating of the SiC growth substrate to maintain the surface temperature of the SiC growth substrate or to set the surface temperature of the deposited SiC. This embodiment is beneficial in that the deposition of SiC can be maintained by setting the required temperature conditions.

[0045] According to another preferred embodiment of the present invention, the control unit is configured to control the heating of the SiC growth substrate and the amount of feed medium supplied for at least one hour, preferably at least two hours or four hours or six hours, so as to continuously deposit SiC at a defined surface growth rate and / or a defined radial growth rate. This embodiment is beneficial in that a large amount of SiC solid can be generated.

[0046] According to another preferred embodiment of the present invention, the control unit is a hardware device configured to control the heating unit, wherein a predefined modification of the heating unit can be caused within a first defined time span from the start of the production run. The benefit of this embodiment is that the hardware can adapt to the defined process without the need for additional sensors. The first time span is preferably one hour or more, or up to 60% of the duration of the production run, or up to 80% of the duration of the production run, or up to 90% of the duration of the production run, or up to 100% of the duration of the production run. The hardware device is preferably configured to modify the supply of the feed medium, wherein the supply of the feed medium is predefined within a second defined time span from the start of the production run, wherein the second time span is one hour or more, or up to 60% of the duration of the production run, or up to 80% of the duration of the production run, or up to 90% of the duration of the production run, or up to 100% of the duration of the production run.

[0047] According to another preferred embodiment of the present invention, at least one sensor is provided, wherein the sensor is coupled to a control unit to provide a sensor signal or sensor data to the control unit, wherein the control unit controls the heating unit and the amount of feed medium supplied according to the sensor signal or sensor data of the at least one sensor, wherein the at least one sensor is a temperature sensor for monitoring the surface temperature of at least one substrate. The at least one temperature sensor is preferably a camera (in particular an infrared camera), wherein preferably a plurality of temperature sensors are provided, wherein the number of temperature sensors corresponds to the number of SiC growth substrates, wherein at least one, in particular two or five, ten or twenty temperature sensors are provided for every ten SiC growth substrates, or wherein at least one, in particular two or five, ten or twenty temperature sensors are provided for every five SiC growth substrates, or wherein at least one, in particular two or five, ten or twenty temperature sensors are provided for every two SiC growth substrates, wherein the temperature sensor preferably outputs a temperature sensor signal or temperature sensor data representing the measured temperature (in particular the surface temperature). This embodiment is advantageous in that the conditions in the SiC production reactor can be adjusted immediately.

[0048] According to another preferred embodiment of the present invention, at least one substrate thickness measurement sensor is provided, wherein the substrate thickness measurement sensor is preferably an IR camera for determining the growth of the substrate thickness, wherein the substrate thickness measurement sensor preferably outputs a thickness measurement signal or thickness measurement data representing the measured substrate thickness or the measured change in the substrate thickness, and / or a resistance determination device for determining a change in resistance to determine the growth of the substrate thickness, wherein the substrate thickness measurement sensor preferably outputs a thickness measurement signal or thickness measurement data representing the measured substrate thickness or the measured change in the substrate thickness. This embodiment is advantageous in that parameters such as heating or feed medium supply can be modified (in particular increased) based on the measured data or values.

[0049] According to another preferred embodiment of the present invention, one or more valves are provided, wherein the one or more valves are configured to be actuated according to a measured temperature, in particular according to a temperature sensor signal or temperature sensor data, and / or wherein the one or more valves are configured to be actuated according to a measured substrate thickness, in particular according to a thickness measurement signal or thickness measurement data. One valve or multiple valves can be part of a gas inlet unit. The advantage of this embodiment is that the feed medium flow and / or the exhaust flow can be controlled. Therefore, according to another preferred embodiment of the present invention, the control unit is configured to increase the electrical energy of at least one SiC growth substrate over time, in particular to heat the surface of the deposited SiC to a temperature between 1300°C and 1800°C.

[0050] Therefore, the control unit is preferably configured to receive temperature sensor signals or temperature sensor data and / or thickness measurement signals or thickness measurement data, and to process temperature sensor signals or temperature sensor data and / or thickness measurement signals or thickness measurement data and / or to control one or more valves and / or energy supply units.

[0051] According to another preferred embodiment of the present invention, the control unit is configured to control the feed medium flow and the temperature of the surface on which SiC is deposited so as to deposit SiC at a set deposition rate (particularly a vertical deposition rate) for a deposition time of more than 2 hours, particularly more than or up to 3 hours, or more than or up to 5 hours, or more than or up to 8 hours, or preferably more than or up to 10 hours, or more preferably more than or up to 15 hours, or most preferably more than or up to 24 hours, or up to 72 hours, or up to 100 hours. The benefit of this embodiment is that a large amount of SiC can be grown.

[0052] According to another preferred embodiment of the present invention, the bottom plate includes at least one cooling element (in particular a bottom cooling element) for preventing the bottom plate from being heated to a temperature exceeding a defined temperature, and / or the side wall portion includes at least one cooling element (in particular a bell jar cooling element) for preventing the side wall portion from being heated to a temperature exceeding a defined temperature, and / or the top wall portion includes at least one cooling element (in particular a bell jar cooling element) for preventing the top wall portion from being heated to a temperature exceeding a defined temperature.

[0053] The benefit of this embodiment is that the present invention discloses a CVD SiC device for large-scale commercial production of ultrapure bulk CVD SiC. The central equipment in the CVD SiC device is a CVD unit or a CVD reactor or a SiC production reactor (especially a SiC PVT source material production reactor). The CVD reactor or the SiC production reactor (especially the SiC PVT source material production reactor) preferably includes a cooling element, which is especially a lower shell (or substrate) cooled by a double-walled fluid (especially water or oil) and an upper shell (or bell jar) cooled by a double-walled liquid. The inner wall of the bottom plate and especially the inner wall of the bell jar are preferably made of a material whose use temperature is compatible with the working temperature of the CVD reactor or the SiC production reactor (especially the SiCPVT source material production reactor). In particular, the inner wall of the bell jar can be made of stainless steel. Preferably, this inner wall is additionally or alternatively coated with a reflective coating (for example, preferably silver or preferably gold) to reflect back the radiant energy, minimize heat loss, and thus reduce electricity costs. The bell jar and / or the bottom plate are preferably made of high temperature resistant stainless steel. However, currently, high-temperature steels with added chromium, nickel, cerium or yttrium can only withstand temperatures up to 1300°C (in air). For example, steel EN 1.4742 (X10CrAlSi18) can withstand temperatures up to 1000°C. In another example, alloy steel EN 2.4816 (UNS N06600) can withstand temperatures of 1250°C and melts above 1370°C, but its tensile strength drops to less than 10% of the room temperature value above 1100°C. Therefore, these steels cannot withstand the high temperatures of more than 1300°C required to absorb SiC.

[0054] It would therefore be beneficial to provide a cooling element to reduce the temperature of the bell jar and / or base plate to a level that is acceptable when using high temperature stainless steel.

[0055] According to another preferred embodiment of the invention, the cooling element is an active cooling element.

[0056] According to another preferred embodiment of the invention, the bottom plate and / or the side wall portion and / or the top wall portion comprises a cooling fluid guiding unit for guiding the cooling fluid, wherein the cooling fluid guiding unit is configured to limit the heating of the bottom plate and / or the side wall portion and / or the top wall portion to a temperature below 1300° C. This embodiment is advantageous in that a metal bell jar (particularly a steel bell jar) can be provided. The steel bell jar is advantageous in that it can be produced in much larger sizes than a quartz bell jar.

[0057] According to another preferred embodiment of the present invention, a sensor unit for the bottom wall portion (particularly the bottom plate or the bottom plate wall portion) and / or the side wall portion and / or the top wall portion is provided to detect the temperature of the bottom plate and / or the side wall portion and / or the top wall portion and output a temperature signal or temperature data, and a fluid delivery unit for delivering the cooling fluid through the fluid guide unit is provided. This embodiment is advantageous in that continuous cooling can be performed without loss or contamination of the cooling liquid and / or the process chamber.

[0058] According to another preferred embodiment of the present invention, the fluid delivery unit is configured to operate according to the temperature signal or temperature data provided by the bottom plate and / or the side wall portion and / or the top wall portion sensor unit. This embodiment is beneficial in that: when the bell jar and / or the bottom plate are operated at a temperature below 1000°C, preferably below 800°C, more preferably below 400°C, respectively, or when the bell jar and / or the bottom plate are cooled to a temperature below 1000°C, preferably below 800°C, more preferably below 400°C, metal impurities can be avoided.

[0059] According to another preferred embodiment of the invention, the cooling fluid is oil or water, wherein the water preferably contains at least one additive, in particular a corrosion inhibitor and / or an antifouling agent (biocide). This embodiment is advantageous in that the cooling liquid can be modified to avoid defects or contamination of the SiC production reactor.

[0060] According to another preferred embodiment of the present invention, the cooling element is a passive cooling element. This embodiment is advantageous in that the passive cooling element does not require continuous monitoring.

[0061] According to another preferred embodiment of the present invention, the cooling element is at least partially formed by a polished steel surface of the bottom plate, the side wall portion and / or the top wall portion. According to another preferred embodiment of the present invention, the cooling element is a coating, wherein the coating is formed above the polished steel surface and the coating is configured to reflect heat. According to another preferred embodiment of the present invention, the coating is a metal coating or comprises a metal (especially silver or gold or chromium) or alloy (especially CuNi alloy) coating. According to another preferred embodiment of the present invention, the emissivity of the polished steel surface and / or the coating is lower than 0.3, especially lower than 0.1 or lower than 0.03. The benefit of this embodiment is that a large amount of thermal radiation can be reflected back to the SiC growth surface due to the polished surface and / or the coating.

[0062] Therefore, according to another preferred embodiment of the present invention, at least a portion of the bell jar surface and / or at least a portion of the base unit surface comprises a coating (in particular a reflective coating), wherein this portion of the bell jar surface and / or this portion of the base unit surface defines a reaction space, wherein the coating is a metal coating, in particular comprising or consisting of gold, silver, aluminum and / or platinum, and / or wherein the coating is configured to reflect at least 2% or at least 5% or at least 10% or at least 20% of the radiant energy radiated during a production run onto the coating.

[0063] According to another preferred embodiment of the present invention, the bottom plate includes at least one active cooling element and one passive cooling element for preventing the bottom plate from being heated to a temperature exceeding a defined temperature, and / or the side wall portion includes at least one active cooling element and one passive cooling element for preventing the side wall portion from being heated to a temperature exceeding a defined temperature, and / or the top wall portion includes at least one active cooling element and one passive cooling element for preventing the top wall portion from being heated to a temperature exceeding a defined temperature.

[0064] According to another preferred embodiment of the invention, the side wall portion and the top wall portion are formed by a bell jar, wherein the bell jar is preferably movable relative to the base plate. According to another preferred embodiment of the invention, more than 50% by mass of the side wall portion and / or more than 50% by mass of the top wall portion and / or more than 50% by mass of the base plate are made of metal, in particular steel. The benefit of this embodiment is that a large steel bell jar can be manufactured, thereby significantly increasing the process chamber volume and thus increasing the amount of potential SiC material. Therefore, a bell jar is preferably provided, wherein, according to another preferred embodiment of the invention, the bell jar comprises a contact area for forming an interface with the base unit, wherein the interface is sealed to prevent leakage of gaseous substances, wherein the bell jar comprises a bell jar cooling unit, wherein the bell jar cooling element forms at least one channel or groove or groove for accommodating or guiding a bell jar cooling liquid, wherein the bell jar cooling element is configured to cool at least one portion of the bell jar and preferably the entire bell jar to below a defined temperature to remove a defined amount of heat per minute respectively during a production run. The bell jar cooling element and / or the base plate cooling element are preferably controlled by a control unit. Additionally or alternatively, the bell jar cooling element and / or the base cooling element are coupled to each other to form one main cooling unit.

[0065] According to another preferred embodiment of the invention, the base unit comprises at least one base cooling element for cooling the base unit, wherein the base cooling element forms at least one channel or groove or recess for receiving or guiding a base cooling liquid.

[0066] According to another preferred embodiment of the present invention, the medium supply unit is configured to supply one or more feed media into the process chamber at a pressure greater than 1 bar, in particular a pressure greater than 1.2 bar, or preferably a pressure greater than 1.5 bar, or more preferably a pressure greater than 2 bar or 3 bar or 4 bar or 5 bar, or a pressure up to 10 bar, or a pressure up to 20 bar. Additionally or alternatively, according to another preferred embodiment of the present invention, the medium supply unit is configured to supply one or more feed media and carrier gas into the process chamber at a pressure greater than 1 bar, in particular a pressure greater than 1.2 bar or 1.5 bar or 2 bar or 3 bar or 4 bar or 5 bar. The benefit of this embodiment is that the material density in the process chamber is high, and a large amount of Si and C materials will reach the SiC growth surface, thereby promoting the growth of SiC.

[0067] According to another preferred embodiment of the present invention, the inlet unit includes a plurality of holes for establishing a turbulent gas flow inside the process chamber (particularly within a distance of less than 20 mm, less than 10 mm, or less than 2 mm from the surface of the SiC growth substrate or the surface of SiC deposited on the SiC growth substrate). Due to the growth (particularly continuous growth) of the silicon carbide deposition surface, the area where turbulence must be maintained will change. The benefit of this embodiment is that turbulence can increase the deposition rate, and more Si and C materials can reach the surface of the SiC growth substrate or the SiC growth surface.

[0068] According to another preferred embodiment of the present invention, the control unit is configured to control the medium supply unit to supply one or more feed media into the process chamber, wherein the one or more feed media include the following molar ratio: Si:C, wherein Si=1 and C=0.8 to 1.1, or wherein the one or more feed media include the following atomic ratio: Si:C, wherein Si=1 and C=0.8 to 1.1. The advantage of this embodiment is that the required material ratio can be controlled and set. Therefore, a control unit is provided for setting the feed medium supply for feeding a feed medium and a carrier gas into the process chamber, wherein the control unit is preferably configured to control the medium supply unit to feed a feed medium into the process chamber at a defined molar ratio and / or a defined atomic ratio, wherein a feed medium and a carrier gas include the following defined molar ratio: Si:H, wherein Si=1 and H=2 to 10, preferably 5 to 10, more preferably 5 to 7, or wherein a feed medium and a carrier gas include the following defined atomic ratio: Si:H, wherein Si=1 and H= 2 to 10, preferably 5 to 10, more preferably 5 to 7, or a control unit for setting a feed medium supply of multiple feed media to the process chamber, wherein the control unit is configured to control the medium supply unit to supply the multiple feed media to the process chamber in a defined molar ratio and / or a defined atomic ratio, wherein the multiple feed media include the following defined molar ratio: Si:C, wherein Si=1 and C=0.8 to 1.1, or wherein the multiple feed media include the following defined atomic ratio: Si:C, wherein Si=1 and C=0.8 to 1.1.

[0069] According to another preferred embodiment of the present invention, the Si and C feed medium sources are coupled to at least one Si and C feed medium orifice of the inlet unit, and the carrier gas feed medium source is coupled to at least one carrier gas orifice of the inlet unit, wherein the Si and C feed medium orifice and the carrier gas orifice are preferably different from each other, or the Si and C feed medium source and the carrier gas feed medium source are coupled to at least one common mixing and / or guiding element (in particular a pipeline), wherein at least one common mixing and / or guiding element is coupled to at least one orifice of the inlet unit.

[0070] According to another preferred embodiment of the present invention, a Si and C supply device is provided for supplying Si and C feed media from Si and C feed medium sources through at least one orifice of the gas inlet unit into the reaction space, and / or a carrier gas supply device is provided for supplying carrier gas feed media from a carrier gas feed medium source through at least one orifice of the inlet unit into the reaction space, and / or a feed medium supply device is provided for supplying a mixture of Si and C feed media and carrier gas feed media from a common mixing and / or guiding element through at least one orifice of the inlet unit into the reaction space.

[0071] Alternatively, according to another preferred embodiment of the present invention, the Si feed medium source is coupled to at least one Si feed medium source orifice of the inlet unit, and wherein the coupled C feed medium source provides at least one C feed medium source orifice of the inlet unit, and wherein the carrier gas medium source is coupled to at least one carrier gas feed medium source orifice of the inlet unit, wherein the Si feed medium source orifice and / or the C feed medium source orifice and / or the carrier gas feed medium source orifice are different from each other, or the Si feed medium source and the C feed medium source are coupled to at least one common mixing and / or guiding element (in particular a pipe), wherein at least one common mixing and / or guiding element is coupled to at least one orifice of the inlet unit, or the Si feed medium source is coupled to at least one C feed medium source orifice of the inlet unit. The mass source and the carrier gas feed medium source are coupled to at least one common mixing and / or guiding element (especially a pipeline), wherein at least one common mixing and / or guiding element is coupled to at least one orifice of the inlet unit, or the C feed medium source and the carrier gas feed medium source are coupled to at least one common mixing and / or guiding element (especially a pipeline), wherein at least one common mixing and / or guiding element is coupled to at least one orifice of the inlet unit, or the Si feed medium source and the C feed medium source and the carrier gas feed medium source are coupled to at least one common mixing and / or guiding element (especially a pipeline), wherein at least one common mixing and / or guiding element is coupled to at least one orifice of the inlet unit.

[0072] According to another preferred embodiment of the present invention, a Si supply device is provided for supplying Si feed medium from a Si feed medium source through at least one orifice of the inlet unit into the reaction space, and / or a C supply device is provided for supplying C feed medium from a C feed medium source through at least one orifice of the inlet unit into the reaction space, and / or a carrier gas supply device is provided for supplying carrier gas from a carrier gas feed medium source through at least one orifice of the inlet unit into the reaction space. The Si supply device and / or the C supply device and / or the carrier gas supply device are preferably pumps, in particular pressure pumps.

[0073] According to another preferred embodiment of the present invention, at least one outlet unit or exhaust outlet is provided as part of the bell jar and / or as part of the base unit for removing gas from the reaction space. This embodiment is advantageous in that used gas can be exhausted from the process chamber and the content of Si and C is less affected by the exhaust gas that is not exhausted. According to another preferred embodiment of the present invention, a pump device is coupled to the outlet unit for removing gas from the reaction space, wherein the pump device is preferably a vacuum pump.

[0074] According to another preferred embodiment of the present invention, the Si feed medium source is configured to provide a Si feed medium with a purity of at least 6N, particularly 7N or preferably 8N or more preferably 9N, the C feed medium source is configured to provide a C feed medium with a purity of at least 6N, particularly 7N or preferably 8N or more preferably 9N, or the Si and C feed medium sources are configured to provide Si and C feed medium with a purity of at least 6N, particularly 7N or preferably 8N or more preferably 9N, and the carrier gas feed medium source is configured to provide a carrier gas feed medium with a purity of at least 6N, particularly 7N or preferably 8N or more preferably 9N. Therefore, at least a first feed medium (particularly a first source gas) is introduced into the process chamber, the first feed medium comprising Si, wherein the purity of the first feed medium excludes at least 99.99999% (ppm wt) of the following substances: B, Al, P, Ti, V, Fe, Ni (particularly excluding one or preferably multiple or more preferably most or most preferably all of the following substances: B, Al, P, Ti, V, Fe, Ni), and at least a second feed medium (particularly a second source gas) is introduced into the process chamber, the second feed medium comprising C, wherein the purity of the second feed medium excludes at least 99.99999% (pp mwt) of the following substances: B, Al, P, Ti, V, Fe, Ni (particularly excluding one or preferably multiple or more preferably most or most preferably all of the following substances: B, Al, P, Ti, V, Fe, Ni), and a carrier gas is introduced, wherein the purity of the carrier gas excludes at least 99.99999% (ppm wt) of the following substances: B, Al, P, Ti, V, Fe, Ni (especially excluding one or preferably multiple or more preferably most or most preferably all of the following substances: B, Al, P, Ti, V, Fe, Ni), or introducing a feed medium (especially source gas) into the process chamber, the feed medium comprising Si and C, wherein the purity of the feed medium excludes at least 99.99999% (ppm wt) of the following substances: B, Al, P, Ti, V, Fe, Ni (especially excluding one or preferably multiple or more preferably most or most preferably all of the following substances: B, Al, P, Ti, V, Fe, Ni), and introducing a carrier gas, wherein the purity of the carrier gas excludes at least 99.99999% (ppm wt) of the following substances: B, Al, P, Ti, V, Fe, Ni (especially excluding one or preferably multiple or highly preferably most or most preferably all of the following: substances B, Al, P, Ti, V, Fe, Ni). Thus, the present invention discloses a CVD reactor for producing SiC source material having a purity of at least 8N or preferably 9N when initially manufactured and preferably provided in particulate or solid form to minimize subsequent surface contamination during handling and use.This ultrapure SiC source material (UPSiC) is made by a CVD reactor process, in which the feed gas used can be purified to an extremely high level using effective techniques such as distillation. SiC or PVT source material SiC (especially UPSiC) is usually first deposited in the form of long and thick rods, and then decomposed (especially cut or crushed) to form a shape or size suitable for use in a PVT crucible. The crushing equipment is preferably made of a material that will not contaminate the SiC, and an etching step can be further performed to remove fine particles and ensure surface purity. The benefit of this embodiment is that large and high-purity particles with favorable sublimation properties can be produced. If an etching step is used, only a few atomic layers (less than 1μm, while 10-50μm in Si etching) will be removed, especially under the action of HF / HNO3. This is beneficial because the bluish brown color after annealing can be removed due to etching. Additionally or alternatively, an acidic pickling acid (e.g. composed of HCl:HF:H2O2 and / or different acid mechanisms) can also be used to remove the oxide layer.

[0075] Chemical vapor deposition occurs when a deposition substrate or SiC growth substrate is heated to the deposition temperature range and a feed gas mixture is introduced into a CVD reactor or SiC production reactor (particularly a SiC PVT source material production reactor). When the feed gas mixture contacts the heated deposition substrate, the energy provided initiates a series of forward and reverse chemical reactions, with the net result being the deposition of solid SiC on the deposition substrate. In the case where the feed gas mixture includes STC and methane, the net reaction can be summarized as follows:

[0076] SiCl4+CH4=SiC+4HCl

[0077] It should be noted that not every Si-containing molecule and C-containing molecule will contact the deposition surface and undergo a deposition reaction. Therefore, it is preferred to pump the feed gas at a higher rate than the feed gas is deposited as SiC on the substrate. For example, if X moles of SiC are deposited per square centimeter of deposition surface per hour, it may be necessary to pump AX moles of Si and AX moles of C into the CVD reactor or SiC production reactor (particularly SiC PVT source material production reactor) per hour, respectively, where A is in the range of between 8 and 10. The lower A is, the higher the conversion efficiency from feed gas to deposited SiC. By optimizing the gas flow in the CVD reactor or SiC production reactor (particularly SiC PVT source material production reactor), the feed gas mixture is maximized in contact with the deposition surface, thereby improving efficiency.

[0078] According to another preferred embodiment of the present invention, the interface between the bell jar and the base unit comprises a seal, wherein the seal is configured to withstand a pressure of more than 1 bar, in particular more than 2 bar or more than 5 bar, more preferably between 1 and 20 bar. This embodiment is beneficial in that a high feed medium density can be generated in the process chamber, thereby providing a beneficial Si and C supply for the SiC growth substrate.

[0079] According to another preferred embodiment of the present invention, the bell jar (in particular the surface of the bell jar defining the reaction space) and / or the base unit (in particular the surface of the bottom plate defining the reaction space) are configured to withstand a chemical treatment (in particular caustic soda), in particular a chemical treatment of at least 30 seconds or at least 60 seconds or at least 5 minutes. This embodiment is advantageous in that the bell jar can be cleaned separately for reuse.

[0080] According to another preferred embodiment of the present invention, the SiC growth substrate is configured to accommodate a SiC solid having a mass greater than 1 kg, in particular greater than or up to 5 kg, or preferably greater than or up to 50 kg, or more preferably greater than or up to 200 kg, and most preferably greater than or up to 500 kg, and a thickness of at least 1 cm, in particular greater than or up to 2 cm, or preferably greater than or up to 5 cm, or preferably greater than or up to 10 cm, or more preferably greater than or up to 20 cm, or most preferably greater than or up to 50 cm. This embodiment is advantageous in that a large amount of SiC material or PVT source material can be produced.

[0081] According to another preferred embodiment of the present invention, the reaction space volume allows the simultaneous production of one or more SiC solids, wherein the mass of the SiC solid is greater than 1 kg, in particular greater than or up to 5 kg, or preferably greater than or up to 50 kg, or more preferably greater than or up to 200 kg, most preferably greater than or up to 500 kg, and the thickness of the SiC solid is at least 1 cm, in particular greater than or up to 2 cm, or preferably greater than or up to 5 cm, or preferably greater than or up to 10 cm, or more preferably greater than or up to 20 cm, or most preferably greater than or up to 50 cm, or wherein the mass of multiple or all SiC solids is greater than 1 kg, in particular greater than or up to 5 kg, or preferably greater than or up to 50 kg, or more preferably greater than or up to 200 kg, most preferably greater than or up to 500 kg, and the thickness of multiple or all SiC solids is at least 1 cm, in particular greater than or up to 2 cm, or preferably greater than or up to 5 cm, or preferably greater than or up to 10 cm, or more preferably greater than or up to 20 cm, or most preferably greater than or up to 50 cm. The advantage of this embodiment is that a large amount of SiC material or PVT source material can be produced.

[0082] During the deposition run, the feed gas mixture is preferably pumped continuously into the CVD reactor, the SiC production reactor, in particular the SiC PVT source material production reactor, and the exhaust gas preferably leaves the reactor continuously. Due to the deposition reaction, the composition of the exhaust gas is significantly different from the feed gas mixture. First, due to the net deposition reaction, a large amount of HCl is produced, which is present in the exhaust gas together with the unreacted feed gas. Secondly, side reactions occur, resulting in the formation of other Si-containing molecules. For example, if STC is contained in the feed gas mixture, some TCS will be formed as a side reaction in the CVD reactor or the SiC production reactor, in particular the SiCPVT source material production reactor, and will be discharged with the exhaust gas.

[0083] When producing SiC in small batches, and compared to deposited SiC, the molar ratio of Si-containing gas and C-containing gas used is large, and the molar ratio of H is also high, but it may not be convenient to recycle the exhaust gas. Therefore, in one embodiment of the present invention, the exhaust gas is first sent to a scrubber, where it is contacted with water to remove all Si-containing compounds and HCL. The exhaust gas is then sent to a flare, where it is burned with the help of natural gas. As a result, a small amount of harmless CO2 is emitted into the air. At the same time, the washing liquid is sent to a recycling company for further processing, utilization and disposal.

[0084] According to another preferred embodiment of the present invention, an exhaust gas outlet unit and an exhaust gas recovery unit for outputting exhaust gas are provided, wherein the exhaust gas recovery unit is connected to the exhaust gas outlet unit, wherein the exhaust gas recovery unit comprises at least a separator unit for separating the exhaust gas into a first fluid and a second fluid, wherein the first fluid is a liquid and the second fluid is a gas, wherein a first storage and / or conduction element for storing or conducting the first fluid is part of the separator unit or coupled to the separator unit, wherein a second storage and / or conduction element for storing or conducting the second fluid is part of the separator unit or coupled to the separator unit. The benefit of this embodiment is that the cost of source materials can be significantly reduced. The separator unit is preferably operated at a pressure above 5 bar and a temperature below -30°C. Therefore, the exhaust gas is preferably fed into the separator unit, which can be a cold distillation tower, wherein Si-containing compounds are condensed from the gas into liquid form and flow down the tower and out of the bottom, while the remaining H, HCl and methane gases flow up the tower and out of the top. The liquid is the first fluid and preferably mainly contains HCl and chlorosilanes and a small amount of H2 and C gas. The gas is the second fluid, preferably comprising mainly H2 and C gases and small amounts of HCl and chlorosilanes.

[0085] According to another preferred embodiment of the present invention, the exhaust gas recovery unit comprises another separator unit for separating the first fluid into at least two parts, wherein the two parts are a mixture of chlorosilanes and a mixture of HCl, H2 and at least one C-containing molecule, and preferably into at least three parts, wherein the three parts are a mixture of chlorosilanes, HCl and a mixture of H2 and at least one C-containing molecule, wherein the first storage and / or conduction element connects the separator unit to the other separator unit. The benefit of this embodiment is that HCl and H2 and at least one C-containing molecule can be directly fed into the process chamber of the SiC production reactor to produce SiC material and PVT source material, respectively. The additional separator unit is preferably configured to operate at a pressure above 5 bar and a temperature below -30°C and / or a temperature above 100°C.

[0086] According to a further preferred embodiment of the invention, the further separator unit is coupled to the storage and / or conducting element for the chlorosilane mixture, the storage and / or conducting element for HCl, and the storage and / or conducting element for H2 and C.

[0087] In the context of the present invention, "C" may be understood as "at least one C-containing molecule", and thus H2 and C storage and / or conduction elements may also be understood as H2 and at least one C-containing molecule storage and / or conduction elements.

[0088] According to another preferred embodiment of the present invention, the chlorosilane mixture storage and / or conducting element forms part of the chlorosilane mixture mass flux path for conducting the chlorosilane mixture into the process chamber. This embodiment is advantageous in that the chlorosilanes can be used as a mixture. Therefore, there is no need to further process the chlorosilane mixture to separate the individual chlorosilanes.

[0089] Thus, by the present invention, it is also possible to produce SiC source materials having at least 6N or preferably 7N or more preferably 8N on a large scale, wherein the feed gas provided is recycled from the exhaust of the first SiC source production reactor. This is achieved by measuring the atomic ratio of H to C in the mixture and providing the CVD reactor with the mixture in appropriate proportions of supplementary H hydrogen and C-containing gas, so that the total H to C molar ratio of hydrogen and carbon in the C-containing gas is within the desired range. Under the given conditions, any carbon is present in the form of methane in the CVD reaction and subsequent cold distillation. Any by-products derived from methane in the CVD reaction will have a higher boiling point and will be separated from the gas phase during the cold distillation process. Methane can be quantified by online or on-line measurement (PAT, process analytical technology), such as flame ionization detectors, any type of infrared spectroscopy (such as FTIR or NIR) or cavity ring-down spectroscopy (with the most sensitive detection limit), or any other online or on-line analytical method that can provide results with the required accuracy within seconds. The hydrogen content can be calculated based on the measured total mass flow of the gas mixture and the quantified methane concentration. Preferably, the loss is compensated to maintain the molar ratio of the original feed gas mixture. The benefit of this embodiment is that due to the recycling of the exhaust gas, the purity of the recovered Si, C and H2 is further improved, so that the purity of the produced SiC is better.

[0090] According to another preferred embodiment of the present invention, a Si mass flux measurement unit for measuring the Si content in the chlorosilane mixture is provided as part of a mass flux path before the process chamber (in particular before the mixing device), and preferably as another Si feed medium source for providing another Si feed medium. According to another preferred embodiment of the present invention, a storage and / or conduction element of the chlorosilane mixture forms part of the chlorosilane mixture mass flux path for conducting the chlorosilane mixture to another process chamber of another SiC production reactor. The advantage of this embodiment is that it can be very accurately controlled whether the feed medium from the feed source or the feed medium from the recovery unit is used. Additionally or alternatively, when the feed medium of the recovery unit is insufficient, the feed medium from the feed source can be added to the feed medium from the recovery unit.

[0091] According to another preferred embodiment of the present invention, the H2 and C storage and / or conduction element forms part of the H2 and C mass flux path for conducting H2 and at least one C-containing molecule into the process chamber. HCl may also be present. According to another preferred embodiment of the present invention, a C mass flux measurement unit for measuring the amount of C in a mixture of H2 and at least one C-containing molecule is provided, which is part of the H2 and C mass flux path before the process chamber (especially before the mixing device) and preferably as another C feed medium source for providing another C feed medium. According to another preferred embodiment of the present invention, the H2 and C storage and / or conduction element forms part of the H2 and C mass flux path for conducting H2 and at least one C-containing molecule into another process chamber of another SiC production reactor. According to another preferred embodiment of the present invention, a second storage and / or conduction element forms part of the H2 and C mass flux path for conducting a second fluid containing H2 and at least one C-containing molecule to the process chamber, wherein the second storage and / or conduction element is preferably fluidically coupled to the H2 and C storage and / or conduction element. According to another preferred embodiment of the present invention, the second storage and / or conducting element forms part of another H2 and C mass flux path for conducting the second fluid (including H2 and at least one C-containing molecule) into the process chamber. According to another preferred embodiment of the present invention, another C mass flux measurement unit for measuring the C amount of the second fluid is provided as part of another H2 and C mass flux path before the process chamber (in particular before the mixing device). This embodiment is beneficial in that, in addition to using chlorosilane, H2 and at least one C-containing molecule can also be recovered, thereby improving the overall efficiency.

[0092] According to a further preferred embodiment of the invention, the second storage and / or conducting element is coupled to a flare unit for combusting the second fluid.

[0093] According to another preferred embodiment of the present invention, a first compressor is provided for compressing the exhaust gas to a pressure above 5 bar, the first compressor being a part of the separator unit or being provided in the gas flow path between the gas outlet unit and the separator unit. According to another preferred embodiment of the present invention, another compressor for compressing the first fluid to a pressure above 5 bar is provided as a part of another separator unit or being provided in the gas flow path between the separator unit and the another separator unit.

[0094] The further separator unit preferably comprises a cryogenic distillation unit, wherein according to another preferred embodiment of the present invention, the cryogenic distillation unit is preferably configured to operate at a temperature between -180°C and -40°C.

[0095] The benefit of this embodiment is that TCS has a boiling point of 31.8°C, while STC has a boiling point of 57.7°C. With such low but very different boiling points, TCS and STC can be efficiently and economically separated from each other and from any heavy contaminants (such as trace metals) by conventional distillation methods and equipment. On the other hand, purifying methane from N requires more complex cryogenic distillation. Methane boils at -161.6°C, while N boils at -195.8°C. Therefore, the distillation column can be operated at a temperature somewhere in between, so that the methane is liquid and flows to the bottom of the column, while the nitrogen is gaseous and flows to the top of the column.

[0096] According to another preferred embodiment of the present invention, the control unit for controlling the fluid flow of one or more feed media is part of a SiC production reactor, wherein the plurality of feed media comprises a first medium, a second medium, a third medium and an additional Si feed medium and / or an additional C feed medium entering the process chamber via a gas inlet unit. The additional Si feed medium preferably consists of a mixture of chlorosilanes of at least 95 mass %, or at least 98 mass %, or at least 99 mass %, or at least 99.9 mass %, or at least 99.99 mass %, or at least 99.999 mass %. The additional C feed medium preferably comprises a mixture of at least one C-containing molecule, H2, HCl and chlorosilanes, wherein the additional C feed medium contains at least 3 mass% or preferably at least 5 mass% or very preferably at least 10 mass% of C of the at least one C-containing molecule, respectively, and wherein the additional C feed medium contains up to 10 mass% or preferably between 0.001 mass% and 10 mass%, very preferably between 1 mass% and 5 mass% HCl, and wherein the additional C feed medium contains more than 5 mass% or preferably more than 10 mass% or very preferably more than 25 mass% H2, and wherein the additional C feed medium contains more than 0.01 mass% and preferably more than 1 mass% and very preferably between 0.001 mass% and 10 mass% of the chlorosilane mixture.

[0097] According to another preferred embodiment of the present invention, a heating unit is arranged along the fluid flow direction between the other separator unit and the gas inlet unit for heating the chlorosilane mixture to convert the chlorosilane mixture from a liquid state to a gaseous state.

[0098] According to another preferred embodiment of the present invention, the surface of the deposition element (or the SiC growth substrate) is heated to a temperature range between 1450°C and 1700°C, in particular to a temperature range between 1500°C and 1600°C or to a temperature range between 1490°C and 1680°C.

[0099] The benefit of this embodiment is that it creates an environment in which very pure SiC can be deposited on the deposition element. Specifically, it has been recognized that the proportion of Si deposited on the deposition element increases at too low a temperature, and the proportion of C deposited on the deposition element increases at too high a temperature. However, within the above temperature range, SiC is purest.

[0100] According to another preferred embodiment of the present invention, the first source gas is introduced into the process chamber by a first supply device, and the second source gas is introduced into the process chamber by a second supply device, or the first source gas and the second source gas are mixed before being introduced into the process chamber and introduced into the process chamber by a supply device, wherein the source gases are mixed with a molar ratio of Si:C of Si=1 and C=0.8 to 1.1 and / or an atomic ratio of Si:C of Si=1 and C=0.8 to 1.1 and then introduced into the process chamber. This has a further advantage because it allows the Si:C=1:1 ratio in the SiC solid material to be adjusted very accurately by the molar ratio of the two gases.

[0101] This embodiment is beneficial in that a gas composition is generated in the process chamber in which very pure SiC is deposited at the deposition element.

[0102] According to another preferred embodiment of the present invention, the carrier gas includes H, wherein the source gas and the carrier gas introduced into the process chamber exist in the following manner: the molar ratio of Si:C:H is Si=1 and C=0.8 to 1.1 and H=2-10, in particular the molar ratio of Si:C:H is Si=1 and C=0.9 to 1 and H=3-5, and / or the atomic ratio of Si:C:H is Si=1 and C=0.8 to 1.1 and H=2-10, in particular the atomic ratio of Si:C:H is Si=1 and C=0.9 to 1 and H=3-5.

[0103] During the deposition process, the atomic ratio or molar ratio is preferably as follows: H2:SiCl4:CH4=5:1:1 or H2:SiCl4:CH4=6:1:1 or H2:SiCl4:CH4=7:1:1 or H2:SiCl4:CH4=8:1:1 or H2:SiCl4:CH4=9:1:1 or H2:SiCl4:CH4=10:1:1.

[0104] Therefore, the atomic or molar ratio between H2:SiCl4:CH4 during deposition is preferably between 5:1:1 and 10:1:1.

[0105] Preferably, the set atomic or molar ratio is kept constant during the deposition process, which preferably also applies to the case of a changing flow rate. It is particularly preferred that the total pressure or the pressure in the process chamber is also kept constant during the deposition process.

[0106] This embodiment is advantageous in that a gas composition is generated in the process chamber and a favorable gas transport is generated in the process chamber, so that very pure SiC is deposited very quickly at the deposition element.

[0107] According to another preferred embodiment of the present invention, the deposition rate is set in the range of 300 μm / h to 2500 μm / h, more specifically in the range of 350 μm / h to 1200 μm / h, more specifically in the range of 400 μm / h to 1000 μm / h, more specifically in the range of 420 μm / h to 800 μm / h.

[0108] The benefit of this embodiment is that the production convertibility of SiC material is more favorable.

[0109] According to another preferred embodiment of the present invention, the first source gas is SiCl4, SiHCl3 or SiCl4, and the second source gas is CH4 or C3H8, wherein the preferred first source gas is SiCl4 and the second source gas is CH4, or wherein the preferred first source gas is SiHCl3 and the second source gas is CH4, or wherein the preferred first source gas is SiCl4 and the second source gas is C3H8.

[0110] This embodiment is beneficial in that these source gases can provide optimal Si and C for deposition.

[0111] Preferably, the purity of the source gas or multiple source gases and / or carrier gas excludes at least 99.9999% (pp mwt) of impurities, in particular excludes 99.9999% (pp mwt) of impurities of the following substances: B, Al, P, Ti, V, Fe, Ni.

[0112] Therefore, preferably, the content of impurities (especially substances B, Al, P, Ti, V, Fe, Ni) in the expansion gas or components of the gas and / or carrier gas is less than 1 ppm wt, or the content of impurities (especially substances B, Al, P, Ti, V, Fe, Ni) in the expansion gas or components of the gas and / or carrier gas is less than 0.1 ppm wt, or the content of foreign substances (especially substances B, Al, P, Ti, V, Fe, Ni) in the expansion gas or components of the gas and / or carrier gas is less than 0.01 ppm wt.

[0113] Particularly preferably, less than 1 ppm wt of substance B is a component of an expansion gas or gas and / or a carrier gas. Particularly preferably, less than 1 ppm wt of substance Al is a component of an expansion gas or gas and / or a carrier gas. Particularly preferably, less than 1 ppm wt of substance P is a component of an expansion gas or gas and / or a carrier gas. Particularly preferably, less than 1 ppm wt of substance Ti is a component of a source gas or gas and / or a carrier gas. Particularly preferably, less than 1 ppm wt of substance V is a component of an expansion gas or gas and / or a carrier gas. Particularly preferably, less than 1 ppm wt of substance Fe is a component of an expansion gas or gas and / or a carrier gas. Particularly preferably, less than 1 ppm wt of substance Ni is a component of an expansion gas or gas and / or a carrier gas.

[0114] Particularly preferably, less than 0.1 ppm wt of substance B is a component of an expansion gas or gas and / or a carrier gas. Particularly preferably, less than 0.1 ppm wt of substance Al is a component of a source gas or gas and / or a carrier gas. Particularly preferably, less than 0.1 ppm wt of substance P is a component of an expansion gas or gas and / or a carrier gas. Particularly preferably, less than 0.1 ppm wt of substance Ti is a component of a source gas or gas and / or a carrier gas. Particularly preferably, less than 0.1 ppm wt of substance V is a component of an expansion gas or gas and / or a carrier gas. Particularly preferably, less than 0.1 ppm wt of substance Fe is a component of a source gas or gas and / or a carrier gas. Particularly preferably, less than 0.1 ppm wt of substance Ni is a component of a source gas or gas and / or a carrier gas.

[0115] It is particularly preferred that less than 0.01 ppm wt of substance B is a component of the source gas or gas and / or carrier gas. It is particularly preferred that less than 0.01 ppm wt of substance Al is a component of the source gas or gas and / or carrier gas. It is particularly preferred that less than 0.01 ppm wt of substance P is a component of the source gas or gas and / or carrier gas. It is particularly preferred that less than 0.01 ppm wt of substance Ti is a component of the source gas or gas and / or carrier gas. It is particularly preferred that less than 0.01 ppm wt of substance V is a component of the source gas or gas and / or carrier gas. It is particularly preferred that less than 0.01 ppm wt of substance Fe is a component of the source gas or gas and / or carrier gas. It is particularly preferred that less than 0.01 ppm wt of substance Ni is a component of the source gas or gas and / or carrier gas. It is also particularly preferred that less than 1 ppm wt of substance nitrogen (N) is a component of the source gas or gas and / or carrier gas.

[0116] According to another preferred embodiment of the present invention, a temperature measuring device (particularly a pyrometer) is used to measure the surface temperature of the deposition element. Preferably, the temperature measuring device outputs a temperature signal and / or temperature data. Particularly preferably, the control device modifies the electrical load of the separation element, in particular increases the electrical load of the separation element, according to the temperature signal and / or temperature data.

[0117] According to another preferred embodiment of the present invention, the temperature measuring device measures the temperature and outputs a temperature signal and / or temperature data at a time interval of less than 5 minutes, in particular less than 3 minutes or less than 2 minutes or less than 1 minute or less than 30 seconds. Preferably, a target temperature or a target temperature range is defined. Preferably, once the temperature signal and / or the temperature data indicate that the surface temperature is below a defined threshold temperature, the control device controls the increase of heat, wherein the threshold temperature is a temperature that is a defined value lower than the lower limit of the set temperature or the set temperature range. The defined value is preferably less than 10°C or less than 5°C or less than 3°C or less than 2°C or less than 1.5°C or less than 1°C.

[0118] The term "elements" may be used interchangeably with "substances" or "element" may be used interchangeably with "substance".

[0119] Further advantages, objects and features of the invention will be explained with reference to the following description of the drawings, in which the device according to the invention is shown by way of example. Parts or elements of the device according to the invention which correspond at least substantially in function in the drawings may be marked with the same reference numerals, so that these parts or elements do not have to be numbered or explained in all drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0120] Each or all of the figures described below are preferably regarded as structural drawings, that is, the dimensions, proportions, functional relationships and / or arrangements in one or more figures preferably completely correspond or preferably basically correspond to the dimensions, proportions, functional relationships and / or arrangements of the device according to the present invention, the product according to the present invention, or the method according to the present invention.

[0121] It shows:

[0122] Figure 1a An example of a CVD reactor is schematically shown, wherein heat is generated by conducting electrical energy through a SiC growth substrate to heat the SiC growth substrate in a resistive heating manner;

[0123] Figure 1b An example of the invention is schematically shown, wherein one side of a wall is heated by a flame and the other side of the wall is arranged in or forms a reaction space;

[0124] Figure 2a schematically shows a cross-sectional view of a CVD reactor according to the present invention;

[0125] Figure 2b schematically shows a cross-sectional view of another CVD reactor according to the present invention;

[0126] Figure 3 An example of another CVD reactor design according to the present invention is schematically shown;

[0127] Figure 4a schematically shows an example of a gas guiding device for guiding the gas to be combusted to one or more combustion outlets;

[0128] Figure 4b schematically shows a cross-sectional view of another CVD reactor according to the present invention;

[0129] Figure 4c Schematically shows Figure 4a A gas guide, wherein a flame burning a guide gas is schematically shown;

[0130] Figure 4d Schematically shows Figure 4b Another cross section of a CVD reactor;

[0131] Figure 5 Another type of heating device is schematically shown, in which the combusted gases are passed through a piping system to heat the SiC growth substrate;

[0132] Figure 6a Another heating device is schematically shown, in which a fluid guided in a pipe is heated, wherein another substance, in particular a gas, is burned to provide heat for heating the fluid in said pipe;

[0133] Figure 6b Schematically shows an example of a heat transfer device for transferring heat from the combustion gases to a fluid, in particular a gas and / or a liquid, within a conduit;

[0134] Figure 6c Schematically shows that a SiC growth substrate may have straight sections connected by one or more curved sections and may act as a guide for a fluid (particularly a gas and / or a liquid);

[0135] Figure 7a Schematically shows a hollow housing that can be used as a SiC growth substrate or can accommodate a SiC growth substrate;

[0136] Figure 7b Schematically shows Figure 7aExamples of support and / or load-bearing structures on hollow shells in;

[0137] Figure 7c Schematically illustrates a SiC growth substrate formed as a foil, wherein the foil is located on a hollow housing;

[0138] Figure 7d Schematically shows Figure 7a A side view of a hollow shell and a heating unit, wherein the heating unit may be covered by the hollow shell;

[0139] Figure 7e Schematically shows a cross-sectional view of SiC grown on a foil arranged on a hollow shell;

[0140] Figure 8a Another hollow housing is schematically shown;

[0141] Figure 8b Schematically shows a device with a carrying member, in particular a rod-like element or rod, which is located on top of a hollow housing for supporting at least one foil;

[0142] Figure 8c schematically shows a cross-sectional view of SiC grown on a foil arranged on a hollow shell;

[0143] Figure 9a Another example of a CVD reactor according to the present invention is schematically shown;

[0144] Figure 9b Schematically shows Figure 9a CVD, wherein the CVD reactor includes a cooling unit for cooling the housing;

[0145] Fig.9c Schematically shows a cross-sectional view of another CVD reactor, in which the growth surfaces of a plurality of SiC growth substrates are parallel to each other or at least significantly overlap each other;

[0146] Figure 9d Schematically showing a side view of a SiC growth substrate of a hollow shell, wherein one growth face faces a first direction and a second growth face faces a second direction;

[0147] Fig.9e Schematically shows a side view of a SiC growth substrate of a hollow shell, wherein one growth face faces a first direction and a second growth face faces a second direction, wherein the second direction makes a certain angle with the direction OD1;

[0148] Fig.10 Schematically shows an alternative CVD reactor design in which the individual SiC growth substrates are aligned with each other;

[0149] Fig.11a Another CVD reactor design is schematically shown in which each SiC growth substrate overlaps an adjacent SiC growth substrate;

[0150] Fig.11b Schematically illustrates another example of a SiC growth substrate design, in particular another example of a hollow shell SiC growth substrate design;

[0151] Fig.11c Schematic showing the overlap of enhancements in a circular reactor design;

[0152] Fig.12 The schematic diagram in the form of a perspective view shows Fig.10 Or the cross-sectional example of a CVD reactor of FIG. 11 . DETAILED DESCRIPTION

[0153] Figure 1a An example of a CVD reactor 850 is schematically shown. The CVD reactor 850 includes a process chamber 856, a gas inlet unit 866 (particularly a pipeline) for feeding gas into the process chamber 856, and a gas outlet unit 868 (particularly a pipeline) for removing residual gas from the process chamber 856. A SiC growth substrate 2200 is provided inside the process chamber 856, wherein the SiC growth substrate 2200 is coupled to a first end with a first electrode 206a and a second end with a second electrode 206b. Electrical energy is conducted from one electrode 206a to the other electrode 206b, thereby heating the SiC growth substrate 2200 through the SiC growth substrate 2200. PCT / EP2021 / 085513 describes in detail a CVD reactor similar to the CVD reactor 850, which is fully incorporated by reference into the subject matter of the present disclosure.

[0154] Figure 1bAn example of a SiC production reactor 850 according to the present invention is shown. The SiC production reactor 850 preferably comprises a process chamber 856, wherein the process chamber 856 is at least surrounded by a bottom wall portion, in particular a bottom plate 862 or a bottom plate wall portion, a side wall portion 864a and a top wall portion 864b, and a gas inlet unit 866 for feeding one or more feed media into the reaction space of the process chamber 856 to generate a source medium. The gas inlet unit 866 is preferably coupled to at least one feed medium source 851, wherein the Si and C feed medium source 851 is preferably configured to provide at least Si and C, in particular SiCl3 (CH3), and wherein the carrier gas feed medium source 853 provides a carrier gas, in particular H2, or wherein the gas inlet unit 866 is preferably coupled to at least two feed medium sources 851, 852, wherein the Si feed medium source 851 is preferably configured to provide at least Si, wherein the C feed medium source 852 provides at least C, in particular natural gas, methane, ethane, propane, butane and / or acetylene, and wherein the carrier gas medium source 853 is configured to provide a carrier gas, in particular H2. The reactor 850 preferably also includes at least one SiC growth substrate surface 2204, which is formed by a wall surface portion 2270 inside the process chamber 856, and a heating unit 2230 is provided for non-electrically generating heat, wherein the heating unit 2230 is configured to heat at least the SiC growth substrate surface 2204 to a temperature above 1300°C.

[0155] According to the present example, the heating unit 2230 comprises one or more combustion guide elements 2282 to cause a flame 2280, thereby heating the wall member 864a. It is also possible to cause one or more flames 2280 to directly heat one or more other wall portions, in particular the opposite wall portion and / or one or more adjacent wall portions and / or the top wall portion 864b and / or the bottom wall portion 862.

[0156] Figure 2a At least one flame 2280 is shown heating the wall member 2271 forming one side and SiC deposited on the other side, which can be understood as the SiC growth face of the wall member 2271. The dashed lines schematically indicate that one or more additional wall members can be heated by the flame 2280. Gas combustion is a reliable and inexpensive method of heating the wall member 2271.

[0157] according to Figure 2b A cooling element 2274 may be provided for cooling the SiC growth face 2202 to a temperature below the minimum deposition temperature. Thus, the growth of SiC may be limited to a limited surface portion 2271 of the first SiC growth face 2202. This prevents SiC from being deposited in the cooler portion 2272.

[0158] Figure 3 An example of a reactor design is schematically shown according to which thermal radiation 2284 from one growth face radiates to an overlapping growth face. Figure 3 It is also shown that the reactor 850 according to the present invention may contain more than four SiC growth substrates 2200a-d and preferably six or more than six SiC growth substrates 2200a-f.

[0159] Figure 4a An example of a SiC growth substrate 2200 having at least one growth face 2204 is shown, wherein a heat guide or gas guide 2282, in particular a conduit, is provided for heating the at least one growth face 2204 to a temperature above 1300° C. The gas guide 2282 preferably comprises at least one or more outlets 2283 for discharging the guided gas to burn the gas, thereby preferably causing at least one flame 2280.

[0160] Figure 4b It is shown that a plurality of SiC growth substrates 2200a-d according to the present invention can be arranged inside the CVD reactor 850. Each SiC growth substrate 2200a-d preferably forms at least one growth surface portion 2202, 2204, 2206 and 2208. In addition, each SiC growth substrate 2200a-d preferably surrounds a fluid guide channel for heating the respective SiC growth substrate 2200a-d. According to the described SiC growth substrates 2200a-d, since the available surface size is already large (compared to the resistive heating rod) at the beginning of the production run, a rapid SiC deposition will occur.

[0161] Figure 4c A SiC growth substrate 2200a is shown which is heated from the inside, in particular by combustion of a fluid provided through a fluid guide 2282.

[0162] Figure 4d It is schematically shown how a plurality of said SiC growth substrates 2200a-b are heated during a production run. Reference numeral 926 refers to a control unit for controlling one or more parameters of the production process, for example heating and / or gas flow into the process chamber and / or cooling and the like.

[0163] Figure 5A further preferred example of a SiC production reactor 850 according to the invention is shown. The production reactor preferably comprises at least one process chamber 856, a gas inlet unit 866 for feeding one or more feed media into the reaction space of the process chamber 856 for generating a source medium. The reactor 850 preferably also comprises at least one SiC growth substrate surface 2204, which is formed by a wall surface portion 2270 inside the process chamber 856, wherein the wall surface portion 2270 is preferably a wall portion of a SiC growth substrate 2200a. Furthermore, the reactor preferably comprises a heating unit 2230 for non-electrically generating heat, wherein the heating unit 2230 is configured for heating at least the SiC growth substrate surface 2204 to a temperature above 1300° C., wherein the heating unit 2230 preferably forms a fluid guide 2288 for guiding a fluid heated to a temperature above 1300° C. to heat the wall member 2271, in particular the SiC growth substrate, to heat the wall surface portion 2270, in particular the SiC growth substrate or the growth face of the deposited SiC. The fluid is preferably produced by burning an energy liquid (especially natural gas or H2 or biogas or methane etc.) respectively by heating.

[0164] The process chamber 856 is preferably surrounded by at least a bottom wall portion (in particular a bottom plate 862 or a bottom plate wall portion), a side wall portion 864a and a top wall portion 864b. The gas inlet unit 866 is preferably coupled to at least one feed medium source 851, wherein the Si and C feed medium source 851 is preferably configured to provide at least Si and C, in particular to provide SiCl3 (CH3), and wherein the carrier gas feed medium source 853 provides a carrier gas, in particular to provide H2. Alternatively, the gas inlet unit 866 can be preferably coupled to at least two feed medium sources 851, 852, wherein the Si feed medium source 851 is preferably configured to provide at least Si, and wherein the C feed medium source 852 is preferably configured to provide at least C, in particular to provide natural gas, methane, ethane, propane, butane and / or acetylene, and wherein the carrier gas medium source 853 is preferably configured to provide a carrier gas, in particular to provide H2,

[0165] Figure 6a and Figure 6b An alternative heating unit 2230 is schematically shown. Figure 6a and Figure 6b The heating unit 2230 burns a fluid (especially natural gas, methane, biogas or H2) to heat another fluid arranged inside the fluid guide 2288 (especially a pipe). Reference numeral 2298 indicates an outlet for discharging the combustion liquid from the combustion chamber 2286.

[0166] Small arrows 2292 represent low fluid temperatures inside fluid director 2288, and larger arrows 2294 represent elevated fluid temperatures. Figure 6b shows the surface increase (with Figure 6a Compared) heat exchanger 2296.

[0167] Figure 6c It is schematically shown that a heated fluid (especially a gas) passes through the SiC growth substrate 2200a, raising the temperature of the growth surface portion to above 1300°C.

[0168] Figure 7a A hollow shell 2240 is schematically shown, wherein the hollow shell 2240 is preferably made of graphite or CFC material, in particular a sheet of CFC material. The average wall thickness of the hollow shell 2240 is preferably less than 5 cm, particularly preferably less than 3 cm, very preferably less than 1 cm, and most preferably less than 0.5 cm.

[0169] Figure 7b The schematic diagram shows the Figure 7a The hollow shell 2240.

[0170] according to Figure 7c , SiC growth substrate 2200a (particularly thin and / or flexible SiC growth substrate 2200a) is arranged on at least a portion of the outer surface of hollow shell 2240. SiC growth substrate 2200a is preferably configured as a thin sheet of CFC material, wherein "thin" means a thickness of less than 3 cm, preferably less than 1 cm, more preferably less than 0.5 cm, and most preferably less than 0.25 cm (per sheet).

[0171] Figure 7d 2240 and schematically shows an example of a heating unit 2230. The heating unit 2230 may be a resistive heating unit 2230, in which electrical energy is conducted via a heat emitting element, in particular at least one resistor, via an electrode 2232, or a similar Figure 4a-4d , Figure 5 or Figure 6a-6c Any heating unit in the.

[0172] Figure 7e The situation during or after a production run is schematically shown, wherein a shell 2252 of SiC is deposited on a SiC growth substrate 2200 a , in particular a hollow shell 2240 or a foil 2250 .

[0173] Figure 8a Another example of a hollow housing 2240 is schematically shown.

[0174] Figure 8bSchematically shown is a SiC growth substrate, in particular a foil 2250, and a support member 2242 arranged on or above a hollow shell 2240. The SiC growth substrate 2200a, in particular a foil and / or one or more pieces of CFC material, is arranged on the SiC growth substrate fixture 2242 and preferably overlaps more than 50% of the outer surface of the hollow shell 2240, and preferably overlaps more than 75% of the outer surface of the hollow shell 2240, and most preferably overlaps more than 85% of the outer surface of the hollow shell 2240. The SiC growth substrate, in particular a foil, and the fixing member 2242 can be separated from the hollow shell 2240 without damaging or destroying the hollow shell 2240. Therefore, after a production run, the grown SiC can be easily removed using the SiC growth substrate (in particular a foil) fixing member 2242.

[0175] Figure 8c Schematically shows Figure 8b Side view of the arrangement.

[0176] Figure 9a Schematically shows an example of another SiC production reactor 850 according to the present invention, in particular for producing 3C-SiC material. The reactor 850 preferably comprises one or more, in particular more than 2 or more than 4 or more than 10 or up to 20 or up to 50 or up to 100 hollow shells 2240 (for example, as described with respect to Figure 7a-7e and / or Figure 8a-8c The hollow shell 2240 is preferably provided in a hollow shell 2240, wherein at least part of the hollow shell 2240 and preferably 50% or more than 50% of the hollow shell 2240 covers the heating unit 2230. The source gas or the source gas mixture can be fed into the reaction space through one or more gas inlet units 866, wherein at least one gas inlet unit 866 is preferably arranged between two hollow shells 2240. The gas fed into the reaction space is preferably further heated. Heat can be removed from the heated gas by a heat exchanger 2299 (particularly a heat exchanger located below the hollow shell 2240).

[0177] Figure 9b Another example of a SiC production reactor 850 according to the invention is also shown, in which a cooling guide 872 is provided, in particular in or on the wall, for actively removing heat from the wall. Thus, due to the cooling, the wall forming the process chamber 856 can be made of metal, in particular steel. Reference numeral 2212 denotes a cooling fluid inlet for supplying cooling fluid into the cooling fluid guide 872, and reference numeral 2214 denotes a cooling fluid outlet for discharging cooling fluid from the cooling fluid guide 872.

[0178] Fig.9cAnother example of a SiC reactor 850 of the present invention is schematically shown. The SiC reactor 850 is composed of a plurality of SiC growth substrates 2200a, 2200b, and 2200c. Growth surfaces 2202 and 2208 are opposite to each other. The same applies to growth surfaces 2206 and 2211. The benefit of this embodiment is that the heat radiation radiated from one of the growth surfaces 2202, 2208, 2206, and 2211 will heat the overlapping growth surfaces.

[0179] The fourth growth surface portion 2208 preferably covers at least 50% of the first growth surface portion 2202 in the first direction D1, wherein a size of the fourth growth surface portion 2208 is at least 80% of a size of the first growth surface portion 2208, in particular exceeding 90% or exceeding 95% of the size of the first growth surface portion 2208.

[0180] The sixth growth surface portion 2211 preferably covers at least 50% of the third growth surface portion 2206 in the fifth direction D5, wherein a size of the sixth growth surface portion 2211 is at least 80% of a size of the third growth surface portion 2206, and in particular exceeds 90% or exceeds 95% of a size of the third growth surface portion 2206.

[0181] Figure 9d An example of a SiC growth substrate 2200a schematically having a first growth face portion 2202 and a second growth face portion 2204. Direction D1 represents a normal to the first growth face portion 2202. Direction D2 represents a normal to the second growth face portion 2204. OD1 represents a direction opposite to D1. Figure 9d , D2 and OD1 are parallel to each other. Therefore, the second direction D2 forms an angle less than 20°, in particular less than 10° or less than 5° with the opposite direction OD1 of the first direction D1.

[0182] Fig.9e Another example of a SiC growth substrate 2200a having a first growth surface portion 2202 and a second growth surface portion 2204 is schematically shown. Direction D1 represents a normal to the first growth surface portion 2202. Direction D2 represents a normal to the second growth surface portion 2204. OD1 represents a direction opposite to D1. Fig.9e , D2 and OD1 are inclined to each other. According to the present invention, the angle between D2 and OD1 is preferably less than 20°, in particular less than 10° or less than 5°.

[0183] Fig.10An example of another SiC reactor 850 of the present invention is schematically shown. The SiC reactor 850 includes a plurality of SiC growth substrates 2200a-x. The SiC growth substrates 2200a-x are preferably formed in a plate shape and / or form a hollow shell 2240. The SiC growth substrates 2200a-x can be electrically heated, in particular, current is conducted through the SiC growth substrates 2200a-x. If at least some or all of the SiC growth substrates 2200a-x are hollow shells 2240, the hollow shells 2240 preferably cover a heating unit 2230 for heating the SiC growth substrates 2200a-x.

[0184] The first SiC growth substrate 2200a of the plurality of SiC growth substrates 2200a-x includes at least a first growth surface portion 2202 facing the first direction D1 and a second growth surface portion 2204 facing the second direction D2, wherein the second direction D2 forms an angle of less than 20°, particularly less than 10° or less than 5° with the opposite direction OD1 of the first direction D1. The second SiC growth substrate 2200b of the plurality of SiC growth substrates 2200a-x includes at least a third growth surface portion 2206 facing the third direction D3 and a fourth growth surface portion 2208 facing the fourth direction D4, wherein the third direction D3 forms an angle of less than 20°, particularly less than 10° or less than 5° with the first direction D1. The third SiC growth substrate 2200c of the plurality of SiC growth substrates 2200a-x includes at least a fifth growth surface portion 2210 facing the fifth direction D5 and a sixth growth surface portion 2211 facing the sixth direction D6, wherein the fifth direction D5 forms an angle with the third direction D3 of less than 20°, in particular less than 10° or less than 5°. The same applies to all the remaining SiC growth substrates 2200d-x, which will not be described below.

[0185] about Figure 7a-Figure 9e Features described may apply in a similar manner and vice versa.

[0186] Fig.11a Shows Fig.10 The reactor shown in the figure shows that the fourth growth surface portion 2208 covers at least 50% of the first growth surface portion 2202 in the first direction D1, wherein the size of the fourth growth surface portion 2208 is at least 80%, especially greater than 90% or 95% of the size of the first growth surface portion 2202, and wherein the sixth growth surface portion 2211 covers at least 50% of the third growth surface portion 2206 in the fifth direction D5, wherein the size of the sixth growth surface portion 2211 is at least 80%, especially greater than 90% or 95% of the size of the third growth surface portion 2206, etc. The benefit of this embodiment is that the radiant heat heats the relative growth surfaces, thereby significantly reducing radiation losses.

[0187] Fig.11b Schematically illustrated is a SiC growth substrate 2200a, which may be provided as a hollow shell, respectively a hollow shell 2240 for folding the SiC growth substrate 2200a, in particular a foil 2250. In particular, in the case of a circular reactor, the SiC growth substrate 2200a, respectively a hollow shell 2230 having a triangular or conical shape, may be advantageous for increasing the overlap between the overlapping growth surface portions.

[0188] Fig.11c The enhanced overlap of overlapping growth surface portions 2202 and 2208 and / or 2206 and 2211 is schematically illustrated.

[0189] Fig.12 The perspective view schematically shows Fig.10 and the reactor section of FIG. 11 .

[0190] Thus, the present invention relates to a SiC production reactor 850, which comprises at least a process chamber 856 and a gas inlet unit 866, wherein the process chamber (856) is surrounded by at least a bottom wall portion 862, in particular a bottom plate 862 wall portion, a side wall portion 864a and a top wall portion 864b;The gas inlet unit 866 is used to feed one or more feed media into the reaction space of the process chamber 856 to generate a source medium, wherein the gas inlet unit 866 is preferably coupled to at least one feed medium source 851, wherein the Si and C feed medium source 851 is preferably configured to provide at least Si and C, in particular to provide SiCl3 (CH3), and wherein the carrier gas feed medium source 853 is configured to provide a carrier gas, in particular to provide H2, or wherein the gas inlet unit 866 is preferably coupled to at least two feed medium sources 851, 852, wherein the Si feed medium source 851 is preferably configured to provide at least Si, and wherein the C feed medium source 852 is configured to provide at least C, in particular to provide natural gas, methane, ethane, propane, butane and / or acetylene, and wherein the carrier gas medium source 853 provides a carrier gas, in particular, provides H2, and a plurality of SiC growth substrates 2200a-x, in particular, more than 3 or more than 4 or more than 6 or more than 8 or more than 16 or more than 32 or more than 64 or up to 128 or up to 256 SiC growth substrates 2200a-x are arranged in the process chamber 856 for depositing SiC, wherein a first SiC growth substrate 2200a of the plurality of SiC growth substrates 2200a-x at least includes a first growth surface portion 2202 facing a first direction D1 and a second growth surface portion 2204 facing a second direction D2, wherein the second direction D2 is parallel to the first direction D1. The first and second SiC growth substrates 2200a-x form an angle less than 20°, particularly less than 10° or less than 5° with the opposite direction OD1 of the plurality of SiC growth substrates 2200a-x, wherein a second SiC growth substrate 2200b of the plurality of SiC growth substrates 2200a-x at least includes a third growth surface 2206 portion facing the third direction D3 and a fourth growth surface portion 2208 facing the fourth direction D4, wherein the third direction D3 forms an angle less than 20°, particularly less than 10° or less than 5° with the first direction D1, wherein a third SiC growth substrate 2200c of the plurality of SiC growth substrates 2200a-x at least includes a fifth growth surface portion 2210 facing the fifth direction D5 and a sixth growth surface portion 2211 facing the sixth direction D6, wherein the fifth direction D5 is oriented toward the first and second directions D5. The three directions D3 form an angle of less than 20°, in particular less than 10° or less than 5°, wherein the fourth growth surface portion 2208 covers at least 50% of the first growth surface portion 2202 in the first direction D1, wherein the size of the fourth growth surface portion 2208 is at least 80% of the size of the first growth surface portion 2208, in particular more than 90% or 95% of the size of the first growth surface portion 2208, wherein the sixth growth surface portion 2211 covers at least 50% of the third growth surface portion 2206 in the fifth direction D5, wherein the size of the sixth growth surface portion 2211 is at least 80% of the size of the third growth surface portion 2206, in particular more than 90% or 95% of the size of the third growth surface portion 2206.;

[0191] Therefore, the present invention relates to a SiC production reactor 850, wherein the SiC production reactor 850 comprises at least: a process chamber 856, wherein the process chamber 856 is surrounded by at least a bottom wall portion, in particular a bottom plate 862 or a bottom plate wall portion, a side wall portion 864a and a top wall portion 864b; a gas inlet unit 866 for feeding one or more feed media into the reaction space of the process chamber 856 to generate a source medium, wherein the gas inlet unit 866 is preferably coupled to at least one feed medium source 851, wherein the Si and C feed medium source 851 is preferably configured to provide at least Si and C, in particular to provide SiCl3 (CH3), and wherein the carrier gas feed medium source 853 is configured to provide a carrier gas, in particular to provide H2 , or wherein the gas inlet unit 866 is preferably coupled to at least two feed medium sources 851, 852, wherein the Si feed medium source 851 is preferably configured to provide at least Si, and wherein the C feed medium source 852 is configured to provide at least C, in particular to provide natural gas, methane, ethane, propane, butane and / or acetylene, and wherein the carrier gas medium source 853 is configured to provide a carrier gas, in particular to provide H2, at least one SiC growth substrate surface 2204 is formed inside the process chamber 856 through a wall surface portion 2270, and a heating unit 2230 for non-electrically generating heat is provided, wherein the heating unit 2230 is configured to heat at least the SiC growth substrate surface 2204 to a temperature above 1300°C.

[0192] List of Reference Numerals

[0193] 206a First electrode

[0194] 206b Second electrode

[0195] 850 SiC production reactor

[0196] 851Si and C feed source medium or Si feed source medium

[0197] 852 C Feed medium source

[0198] 853 Carrier gas feed medium source

[0199] 856 Process Room / Reaction Space

[0200] 862 Bottom wall

[0201] 864a Side wall section

[0202] 864b Top wall part

[0203] 866 Gas Inlet Unit

[0204] 868 Gas outlet unit

[0205] 872 Cooling Fluid Guide

[0206] 926 Control device or control unit

[0207] 2200a-x SiC growth substrate

[0208] 2200aFirst SiC growth substrate

[0209] 2200b Second SiC growth substrate

[0210] 2200c Third SiC Growth Substrate

[0211] 2202 First growth surface

[0212] 2204 Second growth surface

[0213] 2206 Third growth surface

[0214] 2208 Fourth growth surface

[0215] 2210 Fifth growth surface

[0216] 2211 Sixth growth surface

[0217] 2212 Cooling fluid inlet

[0218] 2214 Cooling fluid outlet

[0219] 2216 Angle between D1 and D3

[0220] 2218The angle between D3 and D5

[0221] 2220The angle between D2 and D4

[0222] 2222Angle between D4 and D6

[0223] 2230 Heating Unit

[0224] 2232 Electrode

[0225] 2234 Heating element

[0226] 2240 Hollow Shell

[0227] 2242 Foil fixing member, in particular foil support rod

[0228] 2250 Foil - Thin and / or Flexible Substrates

[0229] 2252SiC grown on SiC growth substrate

[0230] 2260 Bearing and / or supporting unit

[0231] 2270 Wall surface portion of wall member

[0232] 2270a Side wall section

[0233] 2270b Top wall part

[0234] 2271 Wall components

[0235] 2272 Cooler section of wall member

[0236] 2274 Cooling element

[0237] 2280 Flame

[0238] 2282 Energy / Combustion Fluids

[0239] 2283 Combustion gas outlet

[0240] 2284 Thermal Radiation

[0241] 2286 Combustion Chamber

[0242] 2288 Hot gas channel / combustion gas guide / fluid guide device

[0243] 2290 Deflector member

[0244] 2292 Cold Fluid

[0245] 2294 Thermal Fluid

[0246] 2296 Heat Exchanger

[0247] 2298 Exhaust pipe

[0248] 2299 Heat Exchanger

[0249] 2300 Covered surface area

[0250] D1 First direction

[0251] OD1 is opposite to the first direction

[0252] D2 Second direction

[0253] D3 third direction

[0254] D4 Fourth direction

[0255] D5 Fifth Direction

[0256] D6 Sixth Direction

Claims

1. SiC production reactor (850), At least A process chamber (856), wherein the process chamber (856) is surrounded by at least a bottom wall portion (862), a side wall portion (864a) and a top wall portion (864b), wherein the bottom wall portion (862) is in particular a bottom plate (862) wall portion, a gas inlet unit (866) for introducing one or more feed media into the reaction space of the process chamber (856) to generate a source medium, wherein the gas inlet unit (866) is coupled to at least one feed medium source (851), or The gas inlet unit (866) is coupled to at least two feed medium sources (851, 852), A plurality of SiC growth substrates (2200a-x) for depositing SiC, in particular more than 3 or more than 4 or more than 6 or more than 8 or more than 16 or more than 32 or more than 64 or up to 128 or up to 256 SiC growth substrates (2200a-x) arranged in the process chamber (856), wherein a first SiC growth substrate (2200a) of the plurality of SiC growth substrates (2200a-x) comprises at least a first growth surface portion (2202) facing a first direction (D1) and a second growth surface portion (2204) facing a second direction (D2), wherein the second direction (D2) forms an angle with a direction (OD1) opposite to the first direction (D1) of less than 20°, in particular less than 10° or less than 5°, wherein a second SiC growth substrate (2200b) of the plurality of SiC growth substrates (2200a-x) comprises at least a third growth surface portion (2206) facing a third direction (D3) and a fourth growth surface portion (2208) facing a fourth direction (D4), wherein the third direction (D3) forms an angle with the first direction (D1) of less than 20°, in particular less than 10° or less than 5°, wherein a third SiC growth substrate (2200c) of the plurality of SiC growth substrates (2200a-x) comprises at least a fifth growth surface portion (2210) facing a fifth direction (D5) and a sixth growth surface portion (2211) facing a sixth direction (D6), wherein the fifth direction (D5) forms an angle with the third direction (D3) of less than 20°, in particular less than 10° or less than 5°, in, The fourth growth surface portion (2208) covers at least 50% of the first growth surface portion (2202) in the first direction (D1), wherein the size of the fourth growth surface portion (2208) is at least 80% of the size of the first growth surface portion (2208), in particular, exceeds 90% or 95% of the size of the first growth surface portion (2208), The sixth growth surface portion (2211) covers at least 50% of the third growth surface portion (2206) in the fifth direction (D5), wherein the size of the sixth growth surface portion (2211) is at least 80% of the size of the third growth surface portion (2206), in particular, exceeds 90% or 95% of the size of the third growth surface portion (2206), wherein At least the first SiC growth substrate (2200a) covers the first heating unit (2230) from at least two sides, wherein the first heating unit (2230) and the first SiC growth substrate (2200a) are configured to be non-destructively separable from each other, wherein The first SiC growth substrate (2200a) is formed by a hollow shell (2240), wherein a heating unit (2230) is located inside the hollow shell (2240).

2. The SiC production reactor (850) according to claim 1, It is characterized in that The first SiC growth substrate (2200a) is formed of a foil (2250) or supported by a SiC growth foil (2250).

3. The SiC production reactor (850) according to claim 2, It is characterized in that The foil (2250) is arranged around at least two surface portions (2202, 2204) of the hollow shell (2240), wherein the heating unit (2230) is located inside the hollow shell (2240).

4. A method for producing SiC, in particular a method for producing 3C-SiC, At least the following steps are included: A SiC production reactor (850) is provided, wherein the SiC production reactor (850) comprises a process chamber (856), wherein the process chamber (856) is enclosed at least by a bottom wall portion, in particular a floor wall portion (862), a side wall portion (864a) and a top wall portion (864b), a gas inlet unit (866) for introducing one or more feed media into the reaction space of the process chamber (856) to generate a source medium, wherein the gas inlet unit (866) is coupled to at least one feed medium source (851), wherein the Si and C feed medium source (851) is configured to provide at least Si and C, in particular to provide SiCl3 (CH3), and wherein the carrier gas feed medium source (853) provides a carrier gas, in particular to provide H2, or The gas inlet unit (866) is coupled to at least two feed medium sources (851, 852), in, The Si feed medium source (851) is configured to provide at least Si, and wherein the C feed medium source (852) provides at least C, in particular natural gas, methane, ethane, propane, butane and / or acetylene, and wherein the carrier gas medium source (853) is configured to provide a carrier gas, in particular H2, - a plurality of SiC growth substrates (2200a-x) arranged in the process chamber (856) for depositing SiC, in particular more than 3 or more than 4 or more than 6 or more than 8 or more than 16 or more than 32 or more than 64 or up to 128 or up to 256 SiC growth substrates (2200a-x), wherein a first SiC growth substrate (2200a) of the plurality of SiC growth substrates (2200a-x) comprises at least a first growth surface portion (2202) facing a first direction (D1) and a second growth surface portion (2204) facing a second direction (D2), wherein the second direction (D2) forms an angle of less than 20°, in particular less than 10° or less than 5° with a direction opposite to the first direction (D1), wherein a second SiC growth substrate (2200b) of the plurality of SiC growth substrates (2200a-x) comprises at least a third growth surface (2206) portion facing a third direction (D3), wherein the third direction (D3) forms an angle with the first direction (D1) of less than 20°, in particular less than 10° or less than 5°, and wherein the second SiC growth substrate (2200b) comprises a fourth growth surface portion (2208) facing a fourth direction (D4), wherein a third SiC growth substrate (2200c) of the plurality of SiC growth substrates (2200a-x) comprises at least a fifth growth surface portion (2210) facing a fifth direction (D5), wherein the fifth direction (D5) forms an angle with the third direction of less than 20°, in particular less than 10° or less than 5°, and wherein the third SiC growth substrate (2200c) comprises a sixth growth surface portion (2211) facing a sixth direction (D6), wherein the fourth growth surface portion (2208) covers at least 50% of the first growth surface portion (2202) in the first direction (D1), wherein the size of the fourth growth surface portion (2208) is at least 80% of the size of the first growth surface portion (2208), in particular, exceeds 90% or 95% of the size of the first growth surface portion (2208), wherein the sixth growth surface portion (2211) covers at least 50% of the third growth surface portion (2206) in the fifth direction (D5), wherein the size of the sixth growth surface portion (2211) is at least 80% of the size of the third growth surface portion (2206), in particular, exceeds 90% or 95% of the size of the third growth surface portion (2206), and heating a plurality of SiC growth substrates (2200a-x), A feed medium from a feed medium source (851) or a plurality of feed media from a plurality of feed medium sources (851, 852) is fed into the reaction space (856), SiC is deposited on the first growth surface portion (2202), the second growth surface portion (2204), the third growth surface portion (2206), the fourth growth surface portion (2208), the fifth growth surface portion (2210), and the sixth growth surface portion (2211).

5. SiC production reactor (850), At least a process chamber (856), wherein the process chamber (856) is surrounded at least by a bottom wall portion, in particular a bottom plate (862) or a bottom plate wall portion, a side wall portion (864a) and a top wall portion (864b), a gas inlet unit (866) for introducing one or more feed media into the reaction space of the process chamber (856) to generate a source medium, wherein the gas inlet unit (866) is coupled to at least one feed medium source (851), or The gas inlet unit (866) is coupled to at least two feed medium sources (851, 852), at least one SiC growth substrate surface (2204), the at least one SiC growth substrate surface (2204) being formed within the process chamber (856) by a wall surface portion (2270), A heating unit (2230) for non-electrically generating heat is provided, wherein: The heating unit (2230) is configured to heat at least the SiC growth substrate surface (2204) to a temperature above 1300°C.

6. The SiC production reactor (850) according to claim 5, It is characterized in that The heating unit (2230) is at least partially surrounded by a wall member forming the wall surface portion.

7. The SiC production reactor (850) according to claim 5, It is characterized in that The wall surface portion (2270) is a portion of the side wall portion (2270a) and / or the top wall portion (2270b), or is a portion of a wall member (2271) surrounded by the side wall portion (2270a) and the top wall portion (2270b).

8. The SiC production reactor (850) according to claim 5 or 6, It is characterized in that The heating unit (2230) forms a fluid guide device (2288) for guiding the fluid heated to a temperature above 1300°C to heat the wall member (2271), thereby heating the wall surface portion (2270).

9. The SiC production reactor (850) according to claim 5 or 6, It is characterized in that The heating unit (2270) forms a fluid guide device (2288) to guide the gas to at least one defined combustion space (2283) for burning the guided gas to heat the wall member (2271) and thus heat the wall surface portion (2270).

10. A method for producing SiC, in particular a method for producing 3C-SiC, At least the following steps are included: A SiC production reactor (850) is provided, wherein the SiC production reactor (850) comprises a process chamber (856), wherein the process chamber (856) is enclosed at least by a bottom wall portion, in particular a floor wall portion (862), a side wall portion (864a) and a top wall portion (864b), a gas inlet unit (866) for introducing one or more feed media into the reaction space of the process chamber (856) to generate a source medium, wherein the gas inlet unit (866) is coupled to at least one feed medium source (851), in, The Si and C feed medium source (851) is configured to provide at least Si and C, in particular SiCl3 (CH3), and the carrier gas feed medium source (853) provides a carrier gas, in particular H2, or wherein the gas inlet unit (866) is coupled to at least two feed medium sources (851, 852), wherein the Si feed medium source (851) is configured to provide at least Si, and wherein the C feed medium source (852) provides at least C, in particular natural gas, methane, ethane, propane, butane and / or acetylene, and wherein the carrier gas medium source (853) is configured to provide a carrier gas, in particular H2, - at least one SiC growth substrate surface, at least one SiC growth substrate surface being formed by a wall surface portion within said process chamber, - providing a heating unit for non-electrically generating heat, as well as Using the heating unit (2230) to heat at least one SiC growth substrate surface (2230) to a temperature above 1300°C, A feed medium or feed media are introduced into the reaction space (856), SiC is deposited on at least one SiC growth substrate surface (2204).

Images