Isolation valve

Abstract

In some examples, isolation valves are provided to isolate gas and plasma in semiconductor fabrication. An example isolation valve includes a valve body, a valve actuator, and a poppet including a polytetrafluoroethylene (PTFE) material movable in the valve body by the valve actuator to hold the PTFE material in sealing engagement with an opposing surface without the intervention of an O-ring.

Description

Priority claim

[0001] This application claims priority to U.S. Provisional Patent Application Serial No. 63 / 388,079, filed on July 11, 2022, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The subject matter disclosed herein relates generally to isolation valves used in semiconductor manufacturing and, in some examples, to components for isolation valves. Background Art

[0003] Semiconductor substrate processing systems are used to process semiconductor substrates using techniques including etching, physical vapor deposition (PVD), atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), pulsed deposited layer (PDL), plasma enhanced pulsed deposited layer (PEPDL), and resist removal. One type of semiconductor substrate processing equipment is a plasma processing equipment including a vacuum processing chamber, which includes an upper electrode and a lower electrode. During a substrate processing cycle, radio frequency (RF) power is applied between these electrodes to excite a processing gas into a plasma to process a semiconductor substrate in the chamber.

[0004] Vacuum processing chambers are typically supplied by a process gas supply line. The process gas supply line may contain one or more isolation valves that operate to isolate the process gas from the clean gas as needed. Conventional isolation valves contain O-ring sealing configurations. High temperatures, aggressive dynamic response requirements, and harsh chemical environments can make valve applications particularly challenging in semiconductor processing. Isolation valves with conventional O-ring sealing configurations fail quickly and frequently.

[0005] The prior art presented herein is generally intended to present the context of the present disclosure. It should be noted that the information described in this section is intended to provide those skilled in the art with some background to the subject matter disclosed below and should not be considered as recognized prior art. Specifically, the work of the presently designated inventors within the scope described in this background section and aspects of the specification that could not be determined as prior art at the time the application was filed are neither explicitly nor implicitly admitted to be prior art against the present disclosure. Summary of the invention

[0006] Methods and systems for isolating gases, such as process and cleaning gases in semiconductor manufacturing, are presented herein. Some examples include isolation valves and assemblies of isolation valves for use in semiconductor manufacturing.

[0007] In some examples, an isolation valve includes: a valve body; a valve actuator; and a poppet comprising polytetrafluoroethylene (PTFE) material, the poppet being movable within the valve body by the valve actuator to retain the PTFE material in sealing engagement with an opposing surface without the intervention of an O-ring.

[0008] In some examples, the poppet is composed entirely of the PTFE material or is a unitary structure constructed entirely of the PTFE material.

[0009] In some examples, the poppet does not have an o-ring seating channel.

[0010] In some examples, the poppet includes a recess or a step.

[0011] Some examples also include a poppet valve assembly including a poppet valve housing and a segment defined by the poppet head.

[0012] In some examples, the poppet is formed separately from the poppet valve housing.

[0013] In some examples, the poppet valve assembly is a unitary structure having the segment defined by the poppet head integrally formed with the poppet valve housing.

[0014] In some examples, the poppet includes a recess or step configured to mate with a mating structure inside the poppet valve housing.

[0015] In some examples, an O-ring-free poppet for an isolation valve is provided, the isolation valve comprising a valve body and a valve actuator, the O-ring-free poppet comprising: a (PTFE) material section defining a sealing surface, the sealing surface having no O-ring placement channel, the poppet being movable in the valve body by the valve actuator to maintain the sealing surface defined by the PTFE material in sealing engagement with an opposing surface when the isolation valve is closed without the intervention of an O-ring.

[0016] In some examples, the o-ringless poppet includes a recess or a step.

[0017] In some examples, the O-ring-less poppet is a unitary structure composed entirely of or constructed entirely of the PTFE material.

[0018] In some examples, the isolation valve includes a poppet valve assembly including a poppet valve housing and the o-ring-less poppet.

[0019] In some examples, the o-ringless poppet is formed separately from the poppet valve housing.

[0020] In some examples, the poppet valve assembly is a unitary structure having the o-ring-less poppet integrally formed with the poppet valve housing.

[0021] In some examples, the o-ringless poppet includes a recess or step configured to mate with a mating structure inside the poppet valve housing.

[0022] In some examples, the isolation valve includes a valve body and a valve actuator, and the poppet valve assembly includes: a poppet valve housing; and a poppet head, the poppet head including a (PTFE) material section defining a sealing surface, the sealing surface not having an O-ring placement channel, the poppet head being movable in the valve body by the valve actuator to maintain the sealing surface defined by the PTFE material in sealing engagement with an opposing surface when the isolation valve is closed without the intervention of an O-ring.

[0023] In some examples, the poppet includes a recess or a step.

[0024] In some examples, the recess or step is configured to mate with a mating structure inside the poppet valve housing.

[0025] In some examples, the poppet is a unitary structure composed entirely of or constructed entirely of the PTFE material.

[0026] In some examples, the poppet is formed separately from the poppet valve housing.

[0027] In some examples, the poppet valve assembly is a unitary structure having the poppet head integrally formed with the poppet valve housing. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] The various views in the drawings depict merely exemplary embodiments of the present disclosure and should not be considered limiting of its scope.

[0029] According to some exemplary embodiments, Figure 1 A processing chamber, such as a deposition chamber, for fabricating a substrate is shown.

[0030] According to an exemplary embodiment, Figure 2 Schematic cross-section showing an isolation valve.

[0031] According to an exemplary embodiment, Figures 3A-3C Included are isometric and side views of an example poppet.

[0032] Figure 4 A block diagram is shown of an example of a machine on which one or more exemplary methods may be implemented or by which one or more exemplary embodiments may be controlled. DETAILED DESCRIPTION

[0033] Methods and systems for isolating gases (e.g., process and cleaning gases in semiconductor manufacturing) are presented herein. Exemplary gases and plasmas may include nitrogen trifluoride gas (NF3), hydrogen chloride gas (HCl), hydrogen fluoride gas (HF), fluorine-containing plasmas, and oxygen-containing plasmas. Some examples include isolation valves and components of isolation valves used in semiconductor manufacturing. In the following description, for the purpose of explanation, many specific details are presented to provide a thorough understanding of the exemplary embodiments. However, it is apparent to those skilled in the art that the present subject matter can be implemented without these specific details.

[0034] As used herein, the terms "wafer" and "substrate" are used interchangeably. Wafer or substrate refers to the supporting material on which or within which the components of a semiconductor device are fabricated or attached. A substrate (e.g., Figure 1 The substrate 106 in the embodiment may include, for example, a wafer (e.g., having a diameter of 100 mm, 150 mm, 200 mm, 300 mm, 450 mm, or more) composed of an elemental semiconductor material (e.g., silicon (Si) or germanium (Ge)) or a compound semiconductor material (e.g., silicon germanium (SiGe) or gallium arsenide (GaAs)). In addition, other substrates include, for example, dielectric materials such as quartz or sapphire (to which the semiconductor material may be applied). Exemplary substrates include blanket substrates and patterned substrates. A blanket substrate is a substrate that includes a low surface (or flat) top surface. A patterned substrate is a substrate that includes a high surface (or structured) top surface. The structured top surface of the substrate may include different high surface area structures, such as 3D NAND memory holes or other structures.

[0035] refer to Figure 1 To provide a general description of a process chamber using the disclosed method. According to one embodiment, Figure 1 A processing chamber 100 (e.g., an etching or deposition chamber) for manufacturing a substrate is shown. In some examples, the processing chamber 100 may also be referred to as a vacuum chamber. One of the methods for obtaining a radio frequency (RF) gas discharge in a processing chamber is to excite an electric field between two electrodes. When an oscillating voltage is applied between these electrodes, the discharge obtained is called a CCP discharge.

[0036] A plasma 102 may be generated within a processing region 130 of the processing chamber 100 using one or more processing gases to obtain various chemically reactive byproducts generated by the dissociation of various molecules caused by electron-neutron collisions. The chemical aspects of etching involve neutral gas molecules and their dissociated byproducts reacting with molecules of the surface to be etched and producing volatile molecules, which may be pumped away. When the plasma is generated, positive ions are accelerated from the plasma through the space charge sheath separating the plasma from the chamber walls and impact the substrate surface with sufficient energy to remove material from the substrate surface. The process of using energetic and chemically reactive ions to selectively and anisotropically remove material from the substrate surface is called reactive ion etching (RIE). In some examples, the processing chamber 100 may be used in conjunction with a PECVD or PEALD deposition process.

[0037] Controller 116 manages the operation of processing chamber 100, for example, during treatment, cleaning and sweep cycles, and by controlling various components in processing chamber 100, such as RF generator 118, gas source 122, and gas pump 120. Gas source 122 may include a cleaning gas source and a sweep gas source. Other gas sources are possible. In one embodiment, fluorocarbon gases (e.g., CF4 and C4F8) are used in dielectric etching processes due to their anisotropic and selective etching capabilities, but the principles described herein can be applied to other plasma-generating gases. Fluorocarbon gases readily dissociate into chemically reactive byproducts, including smaller molecules and atomic radicals. These chemically reactive byproducts can etch away dielectric materials.

[0038] The processing chamber 100 shows a processing chamber having an upper (or top) electrode 104 and a lower (or bottom) electrode 108. Exemplary processes in which the isolation valves of the present disclosure may be used include thermal ALD processes, which may or may not include an in-situ plasma. Other exemplary processes may include techniques such as etching, physical vapor deposition (PVD), atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), pulsed deposited layer (PDL), plasma enhanced pulsed deposited layer (PEPDL), and photoresist removal. The upper electrode 104 may be grounded or coupled to an RF generator (not shown), and the lower electrode 108 is coupled to the RF generator 118 through a matching network 114. The RF generator 118 provides an RF signal between the upper electrode 104 and the lower electrode 108 to generate RF power at one or more (e.g., two or three) different RF frequencies. Depending on the desired configuration of the processing chamber 100 for a particular operation, at least one of the multiple RF frequencies may be turned on or off. In Figure 1In the illustrated embodiment, the RF generator 118 is configured to provide at least three different frequencies, such as 400 kHz, 2 MHz, 27 MHz, and 60 MHz, although other frequencies are possible.

[0039] The processing chamber 100 includes a gas showerhead on the upper electrode 104, which inputs a processing gas provided by a gas source 122 into the processing chamber 100, and a perforated confinement ring 112 that allows the gas to be pumped out of the processing chamber 100 by a gas pump 120. In some exemplary embodiments, the gas pump 120 is a turbomolecular pump, but other types of gas pumps may be used.

[0040] When the substrate 106 is present in the processing chamber 100 , the silicon focus ring 110 is located beside the substrate 106 so as to have a uniform RF field at the bottom surface of the plasma 102 to perform uniform etching (or deposition) on the surface of the substrate 106 . Figure 1 The embodiment of the present invention shows a three-pole reactor configuration in which the upper electrode 104 is surrounded by a ground electrode 124 (e.g., a symmetrical RF ground electrode). Insulator 126 is a dielectric that isolates the ground electrode 124 from the upper electrode 104. Other implementations of the processing chamber 100, including ICP-based implementations, are possible without changing the scope of the disclosed embodiments.

[0041] Each frequency generated by RF generator 118 may be selected for a specific purpose during the substrate manufacturing process. Figure 1 In the example of FIG. 1 , when RF power is provided at 400kHz, 2MHz, 27MHz, and 60MHz, the 400kHz or 2MHz RF power provides ion energy control, and the 27MHz and 60MHz powers provide control over plasma density and dissociation mode of chemicals. This configuration can turn each RF power on or off to enable certain processes that use ultra-low ion energy on a substrate, and certain processes where the ion energy must be low (e.g., below 700 or 200eV) (e.g., for soft etching of low-k materials).

[0042] In another embodiment, 60 MHz RF power is used on the upper electrode 104 to achieve ultra-low energy and very high density. This configuration allows for chamber cleaning with a high density plasma while minimizing sputtering on the electrostatic chuck (ESC) surface when the substrate 106 is not in the process chamber 100. When the substrate 106 is not present, the ESC surface is exposed and any ion energy on the surface should be avoided, which is why the bottom 2 MHz and 27 MHz power supplies may be turned off during cleaning.

[0043] In an exemplary embodiment, the processing chamber 100 further includes a sensor 128, which can be placed between the matching network 114 of the RF generator 118 and the lower electrode 108. The sensor 128 can include a voltage-current (or VI) sensor configured to generate a plurality of signals (e.g., sensed data) representing at least one signal characteristic of the RF signal generated by the RF generator 118 at corresponding multiple time points. For example, the VI sensor can generate a plurality of signals representing one or more of the following signal characteristics of the RF signal: voltage, current, phase, transmission power, and impedance. In some examples, the plurality of signals generated by the sensor 128 at corresponding multiple time points can be stored (e.g., stored in the controller 116 or the on-chip memory of the sensor 128), and can be retrieved (e.g., retrieved by the controller 116) for subsequent processing. In other aspects, the plurality of signals generated by the sensor 128 at corresponding multiple time points can be automatically transmitted to the controller 116 when they are generated.

[0044] In some examples, the gas source 122 is connected to one or more gas pipeline supply arrangements upstream of a gas showerhead disposed on the upper electrode 104. The gas pipeline supply arrangement may include one or more inlet manifolds ( Figure 1 200). The gas sources 122 may include a process gas source, a cleaning gas source, and a purge gas source, each of which is controlled by one or more isolation valves 200. In some examples, a gas line supply arrangement is connected to the gas sources 122 and is used for cleaning and purging cycles of the process chamber 100 between or after substrate processing cycles. Other gas source and isolation valve, gas manifold, and gas control component arrangements are possible.

[0045] In some applications, a clean gas isolation valve 200 is used to isolate downstream process gases in a mixed gas injector block from upstream clean gases in a manifold. Application requirements may include the ability to operate at high temperatures (e.g., 200° C.), tolerance to chlorine-containing deposition chemicals, tolerance to radical fluorine plasma / gases (e.g., clean gases), the ability to operate dynamically (e.g., as opposed to a single-use static seal), and to allow frequent use (e.g., 1 to 2 times a day in a production environment). The combination of these requirements (especially high temperature capability, dynamic properties, and chemical tolerance) can make valve applications particularly challenging. Conventional isolation valves use O-ring seals that engage opposing sealing surfaces (e.g., process gas injector blocks). The O-ring seal moves in a linear motion to open and close the isolation valve and dynamically seal the opposing surfaces. This traditional solution is prevalent in valve applications, but often fails, sometimes only lasting one or two operating cycles.

[0046] Current technology is susceptible to several failure mechanisms, such as O-ring temperature degradation. When the O-ring polymer crosslinks relax, the filler material may be released, causing the mechanical properties of the O-ring to change adversely. O-ring plasma degradation (both chemical and physical) can occur, even the best performing O-rings designed for plasma applications, and can be etched to a material loss of up to 0.2-1%, depending on the conditions. In some instances, the isolation valve will be stuck closed. Here, the O-ring is stuck between the bonding materials after being exposed to temperatures and chemicals that cause separation forces that are too high for the valve actuator to overcome. In addition, when stuck, the isolation valve poppet (or closure) may be disengaged from the valve actuator, causing further damage to the valve mounting features and actuator. In other problems, the isolation valve body may overheat due to plasma recombination (exothermic heat) on the valve surface. In some instances, the isolation valve may be heated beyond the theoretical maximum operating temperature, causing degradation of the O-ring and other isolation valve components. O-ring material cost is high and the high purity sealing ceramic surfaces used in conventional isolation valves can be expensive. Indirect problems caused by conventional O-ring degradation can include lack of cleanliness and contamination downstream of processed wafers. Chemical reactions, undesirable byproducts and material loss on the O-rings can enter the process gas stream and cause defects on the processed wafers.

[0047] The present example disclosed herein avoids the use of O-rings. Figure 2 , the isolation valve 200 includes a valve body 202, which is schematically shown in dashed outline. The valve body includes an inlet, generally shown at 204, and an outlet, generally shown at 206. Other configurations of the inlet and outlet are possible. The isolation valve 200 includes a poppet 208 and a poppet valve housing 210. The poppet valve housing 210 supports the poppet 208 inside the valve body 202. The poppet valve housing 210 and the poppet 208 together define a poppet valve assembly 211. The poppet valve assembly 211 can reciprocate axially within the valve body 202 (in the direction of arrow A) to open and close the inlet 204 and / or outlet 206 of the isolation valve 200. In some examples, the poppet valve housing 210 and the poppet 208 can be moved by Figure 1 The valve body 200 is moved by a valve actuator (not shown) controlled by the controller 116. In some examples, the valve actuator is configured to apply a spring force sufficient to seal the poppet 208 when the poppet 208 is held against the opposing surface 212 in the closed position of the isolation valve 200. In some examples, when the actuator (e.g., including a spring) is in a free state, the poppet 208 protrudes a short distance in the range of 1.0-1.5 mm from the valve body 202, and when the spring is compressed, the short distance provides sufficient clamping force to seal the poppet against the opposing surface 212 when in use.

[0048] In some examples, the poppet valve assembly 211 is or includes a unitary structure having the poppet head 208 integrally formed with the poppet valve housing 210 .

[0049] In some examples, to close the isolation valve 200, the poppet 208 can be moved to seal the opposing surface 212 to block the passage of gas. The opposing surface 212 can be defined by an external component 213 that fits the isolation valve 200 (e.g., as shown in the figure), or disposed inside the valve body 202. Other configurations are possible. The poppet 208 seals the opposing surface 212 without an O-ring seal. When the poppet 208 moves away from the opposing surface 212, the isolation valve 200 is opened. When the poppet 208 moves in the other direction and engages with the opposing surface 212, the isolation valve 200 is closed.

[0050] When isolation valve 200 is opened, gas may enter isolation valve 200 via inlet 204 as indicated by arrow B and exit valve 200 via outlet 206 as indicated by arrow C. Exemplary gas flow within valve body 202 is shown by arrows labeled D. As shown, gas may pass through inlet 204 and then through gap 214 between poppet 208 and opposing surface 212. In some examples, a tortuous or curved passage 216 is provided in poppet valve housing 210 to facilitate unrestricted flow of gas within valve body 202 and attempt to prevent overheating of isolation valve 200.

[0051] In some examples, the poppet 208 comprises a polytetrafluoroethylene (PTFE) material. In some examples, the poppet 208 is entirely comprised of or formed from a solid block of PTFE material. In some examples, only a portion or subsection of the poppet 208 comprises a PTFE material. In some examples, only a sealing surface 218 of the poppet disposed opposite the opposing surface 212 is defined by or comprises a PTFE material. In some examples, the sealing surface 218 is defined by a portion or subsection of the poppet 208, such as Figure 3C 312 in FIG. Other configurations of the poppet 208 and multiple portions or subsections of the poppet 308 are possible. The PTFE material is used as a sealing material for the poppet 208 of the isolation valve 200 and can fully engage with the opposing surface without the need for an O-ring to seal the inlet 204 and close the valve 200.

[0052] The use of a poppet 208 comprising PTFE as a sealing material can solve many of the failure mechanisms discussed above. First, the use of O-rings and their attendant complications can be avoided. The poppet 208 comprising PTFE is strongly resistant to temperature degradation. The PTFE material does not contain cross-linked or filled materials and is generally safe for operation up to 260°C. Further, the PTFE material contains only carbon-fluorine (CF) bonds and is completely inert to free radical fluorine and halogenide-containing chemicals such as HCl and chlorine trifluoride (ClF3). In experiments, it was found that some examples of the poppet 208 comprising PTFE showed a weight loss of less than 0.01% after long-term exposure (72 hours) to free radical fluorine at 200°C. Even if the conventional isolation valve sticking problem is not completely solved, it is still reduced. PTFE has excellent low friction characteristics and requires almost zero force to separate from the opposing surface when opening. Low friction reduces applied stress and solves the valve poppet separation problem caused by it. Further, PTFE is thermally insulating and has a low (almost zero) recombination rate with fluorine plasma. The above properties help reduce the problem of valve overheating. PTFE material is much cheaper than ceramic alternatives and can significantly reduce the construction and assembly costs of the valve. Wafer processing cleanliness is significantly improved because the PTFE material is very pure and because it does not react with gases and other plasma chemicals, there is little, if any, material degradation that causes wafer contamination downstream of the isolation valve 200.

[0053] Exemplary isolation valves of the present disclosure have been tested in use and observed to effectively isolate gases without the use of O-rings and for hundreds of operating cycles and / or for multiple operating cycles without defects. Exemplary periods of substantially defect-free use range between about 6-8 months, or if used under ideal operating conditions, range between about 10-12 months. In some examples, the above periods may include about 200-700 open / close cycles, compared to some conventional isolation valves that fail in about 1-2 cycles.

[0054] According to an exemplary embodiment, Figures 3A-3C A perspective side view of different configurations including a poppet. Figure 3A , the poppet 308 may include a cylindrical (disc-shaped) body structure, such as shown in the figure. Figure 3B , the poppet 308 may include a frustoconical or tapered body configuration, such as shown. Referring again to Figure 3CIn some examples, the poppet 308 may include a recess or step 310 configured to mate with a mating structure inside the poppet housing 210. Other interengageable poppet configurations and support arrangements are possible. For example, the poppet 208 or poppet 308 may be secured to the poppet housing 210 using one or more axial screws, or otherwise secured to the poppet housing 210 (e.g., by an adhesive). One or more axial screws 314 may be disposed within the interface between the poppet 208 / 308 and the poppet housing 210 (e.g., at an off-center axial position as shown) to prevent relative rotational movement between the poppet 208 / 308 and the poppet housing 210. In some examples, the one or more axial screws engage a threaded insert (not shown) in the PTFE material. In some examples, PTFE material is used to make the isolation valve 200 "self-sealing", which means that it not only seals the opposing surface 212 to close the inlet 204 when the valve is closed, but also seals the surface of the actuator head 208 / 308 adjacent to one or more axial screws 314 to prevent gas from passing through the interface between the actuator head 208 / 308 and the actuator valve housing 210.

[0055] In some examples, the poppet 208 / 308 can be retrofitted into an existing isolation valve 200 in the field. In some examples, a lay pattern and a low surface roughness are provided on the sealing surface 312 of the poppet 208 / 308. Some examples may include a high polish on the sealing surface 312 of the poppet 208 / 308. Some examples include a surface roughness of about 8-16 microinches Ra (0.2-0.4 micrometers). In some examples, the sealing surface 312 and / or the lay pattern on the sealing surface extend over the entire surface of the top of the poppet 208 / 308 (in the view), or only a portion thereof. In some examples, the top of the poppet 208 / 308 (in the view) and / or the sealing surface 312 do not have an O-ring placement channel (or groove).

[0056] In some examples, the poppet 208 / 308, and / or the poppet housing 210, and / or the poppet assembly 211 are cylindrical and have a circular cross-section. In some examples, the cylindrical poppet 208 / 308 includes a circular sealing surface that is sized to adequately seal with the opposing surface 212. For example, in some examples, the poppet 208 / 308, and / or the poppet housing 210, and / or the poppet assembly 211 are not cylindrical and may include an elliptical or square cross-section. In some examples, the cylindrical poppet 208 / 308 includes a non-circular sealing surface that is sized to adequately seal with the opposing surface 212. In some examples, the opposing surface 212 may be circular or non-circular. As described above, in some examples, the poppet assembly 211 is a single structure or includes a single structure having the poppet 208 integrally formed with the poppet housing 210. In some examples including a poppet 208 / 308 formed entirely or in part of a PTFE material, the poppet valve assembly is or includes a multi-component structure in which the PTFE material is replaceable. In some examples, the multi-component structure mitigates the effects of any dimensional creep of the PTFE material by having less PTFE material as a component.

[0057] Some examples include the following elements:

[0058] Example 1 includes an isolation valve comprising: a valve body; a valve actuator; and a poppet comprising polytetrafluoroethylene (PTFE) material, the poppet being movable in the valve body by the valve actuator to maintain the PTFE material in sealing engagement with an opposing surface without the intervention of an O-ring.

[0059] Example 2 includes the features of Example 1, wherein the poppet is a unitary structure consisting entirely of or constructed entirely of the PTFE material.

[0060] Example 3 includes the features of any of Examples 1-2, wherein the poppet does not have an O-ring seating channel.

[0061] Example 4 includes the features of any of Examples 1-3, wherein the poppet includes a recess or a step.

[0062] Example 5 includes the features of any of Examples 1-4, further comprising a poppet valve assembly comprising a poppet valve housing and a segment defined by the poppet head.

[0063] Example 6 includes the features of any of Examples 1-5, wherein the poppet is formed separately from the poppet valve housing.

[0064] Example 7 includes the features of any of Examples 1-6, wherein the poppet valve assembly is a unitary structure having the segment defined by the poppet head integrally formed with the poppet valve housing.

[0065] Example 8 includes the features of any of Examples 1-7, wherein the poppet includes a recess or step configured to mate with a mating structure inside the poppet valve housing.

[0066] Example 9 includes an O-ring-free poppet for an isolation valve, the isolation valve comprising a valve body and a valve actuator, the O-ring-free poppet comprising: a (PTFE) material section defining a sealing surface, the sealing surface not having an O-ring placement channel, the O-ring-free poppet being movable in the valve body by the valve actuator to maintain the sealing surface defined by the PTFE material in sealing engagement with an opposing surface when the isolation valve is closed without the intervention of an O-ring.

[0067] Example 10 includes the features of Example 9, wherein the o-ringless poppet comprises a recess or a step.

[0068] Example 11 includes the features of any of Examples 9-10, wherein the O-ring-less poppet is a unitary structure consisting entirely of or constructed entirely of the PTFE material.

[0069] Example 12 includes the features of any of Examples 9-11, wherein the isolation valve includes a poppet valve assembly including a poppet valve housing and the O-ring-less poppet.

[0070] Example 13 includes the features of any of Examples 9-12, wherein the O-ringless poppet is formed separately from the poppet valve housing.

[0071] Example 14 includes the features of any of Examples 9-13, wherein the poppet valve assembly is a unitary structure having the O-ring-less poppet integrally formed with the poppet valve housing.

[0072] Example 15 includes the features of any of Examples 90-14, wherein the O-ringless poppet includes a recess or step configured to mate with a mating structure inside the poppet valve housing.

[0073] Example 16 includes a poppet valve assembly for an isolation valve, wherein the isolation valve includes a valve body and a valve actuator, the poppet valve assembly including: a poppet valve housing; and a poppet head, the poppet head including a (PTFE) material section defining a sealing surface, the sealing surface not having an O-ring placement channel, the poppet head being movable in the valve body by the valve actuator to maintain the sealing surface defined by the PTFE material in sealing engagement with a relative surface when the isolation valve is closed without the intervention of an O-ring.

[0074] Example 17 includes the features of Example 16, wherein the poppet comprises a recess or a step.

[0075] Example 18 includes the features of any of Examples 15-16, wherein the recess or step is configured to mate with a mating structure inside the poppet valve housing.

[0076] Example 19 includes the features of any of Examples 16-18, wherein the poppet is a unitary structure consisting entirely of or constructed entirely of the PTFE material.

[0077] Example 20 includes the features of any of Examples 16-19, wherein the poppet is formed separately from the poppet valve housing.

[0078] Example 21 includes the features of any of Examples 16-20, wherein the poppet valve assembly is a unitary structure having the poppet head integrally formed with the poppet valve housing.

[0079] Example 22 includes a method for operating an isolation valve, the method comprising: installing the isolation valve in a gas supply line of a processing chamber without the intervention of an O-ring of a poppet, the isolation valve comprising: a valve body; a valve actuator; and a poppet comprising polytetrafluoroethylene (PTFE) material, the poppet being movable in the valve body by the valve actuator to maintain the PTFE material in sealing engagement with a relative surface without the intervention of an O-ring; supplying gas through the isolation valve; and processing a substrate in the processing chamber.

[0080] Figure 4 is a block diagram showing a machine 400 (e.g. Figure 1116), on which one or more of the exemplary processing embodiments described herein may be implemented or controlled, or by which one or more of the exemplary processing embodiments described herein may be implemented or controlled. In alternative embodiments, machine 400 may operate as a standalone device or may be connected (e.g., networked) to other machines. In a networked deployment, machine 400 may operate as a server machine, a client machine, or both in a server-client network environment. In one example, machine 400 may be used as a peer machine in a peer-to-peer (P2P) network (or other distributed network) environment. In addition, although only a single machine 400 is shown, the term "machine" should also be considered to include any collection of machines (controllers) that individually or jointly execute one or more sets of instructions to perform any one or more of the methods described herein, such as via cloud computing, software as a service (SaaS), or other computer cluster configurations.

[0081] The examples described herein may include logic, several components or mechanisms, or may be operated by logic, several components or mechanisms. A circuit system is a collection of circuits implemented in a tangible entity including hardware (e.g., simple circuits, gates, logic). The circuit system membership may be flexible over time and with the variability of the basic hardware. The circuit system includes components that can perform specified operations individually or in combination when used. In one example, the hardware of the circuit system can be designed in a fixed and immutable manner to perform specific operations (e.g., hard wiring). In another example, the hardware of the circuit system may include variable connection physical components (e.g., execution units, transistors, simple circuits), which include computer-readable media that are modified by physical means (e.g., magnetically and electrically through the movable setting of constant mass particles) to encode instructions for specific operations. When connecting physical components, the basic electrical properties of the hardware components are changed (e.g., from insulators to conductors, and vice versa). Instructions enable embedded hardware (e.g., execution units or loading mechanisms) to generate components of the circuit system in hardware via variable connections to perform parts of specific operations when performing operations. Thus, when the device operates, the computer-readable medium is communicatively coupled to other components of the circuit system. In some examples, any of the physical components can be used in more than one component in more than one circuit system. For example, in operation, an execution unit can be used in a first circuit of a first circuit system at one point in time, and reused by a second circuit of the first circuit system, or by a third circuit of the second circuit system at a different time.

[0082] The machine 400 (e.g., a computer system) may include a hardware processor 402 (e.g., a central processing unit (CPU), a hardware processor core, or any combination thereof), a graphics processing unit (GPU) 403, a main memory 404, and a static memory 406, some or all of which may communicate with each other via an interconnect 408 (e.g., a bus). The machine 400 may also include a display device 410, an alphanumeric input device 412 (e.g., a keyboard), and a user interface (UI) navigation device 414 (e.g., a mouse). In one example, the display device 410, the alphanumeric input device 412, and the UI navigation device 414 may be a touch screen display. The machine 400 may additionally include a mass storage device (e.g., a drive unit) 416, a signal generating device 418 (e.g., a speaker), a network interface device 420, and one or more sensors 421, such as a global positioning system (GPS) sensor, a compass, an accelerometer, or another sensor. The machine 400 may include an output controller 428 (e.g., serial (e.g., Universal Serial Bus (USB)), parallel, or other wired or wireless (e.g., infrared (IR), near field communication (NFC))) connection) to communicate with or control one or more peripheral devices (e.g., printer, card reader).

[0083] In an exemplary embodiment, the hardware processor 402 may perform the functionality of the controller 116 discussed herein.

[0084] The mass storage device 416 may include a machine-readable medium 422 on which one or more sets of data structures or instructions 424 (e.g., software) may be stored that implement or are used by any one or more of the techniques or functions described herein. The instructions 424 may also reside, in whole or in part, within the main memory 404, within the static memory 406, within the hardware processor 402, or within the GPU 403 during execution thereof by the machine 400. In one example, one or any combination of the hardware processor 402, the GPU 403, the main memory 404, the static memory 406, or the mass storage device 416 may constitute a machine-readable medium.

[0085] Although machine-readable medium 422 is shown as a single medium, the term "machine-readable medium" may include a single medium or multiple media (eg, a centralized or distributed database and / or associated caches and servers) configured to store one or more instructions 424.

[0086] The term "machine-readable medium" may include any medium capable of storing, encoding, or carrying instructions 424 for execution by the machine 400 and causing the machine 400 to perform any one or more of the techniques of the present disclosure; or any medium capable of storing, encoding, or carrying data structures used by or related to such instructions 424. Non-limiting examples of machine-readable media may include solid-state memory and optical and magnetic media. In one example, a mass machine-readable medium includes a machine-readable medium 422 having a plurality of particles having a constant mass (e.g., rest mass). Therefore, a mass machine-readable medium is not a transient propagating signal. Specific examples of a mass machine-readable medium may include non-volatile memory, such as semiconductor memory devices (e.g., electronically programmable read-only memory (EPROM), electronically erasable programmable read-only memory (EEPROM)) and flash memory devices; magnetic disks, such as internal hard disks and removable disks; magneto-optical disks; and CD-ROM and DVD-ROM disks.

[0087] The instructions 424 may be further transmitted or received over the communication network 426 through the network interface device 420 using a transmission medium.

[0088] The implementation of the aforementioned technology can be completed via any number of specifications, configurations or exemplary deployments of hardware and software. It should be understood that the functional units or capabilities described in this specification may be referred to or labeled as components or modules to more specifically emphasize their implementation independence. Such components can be embodied in any number of software or hardware forms. For example, a component or module can be implemented as a hardware circuit, which includes a customized very large integrated (VLSI) circuit or gate array, a ready-made semiconductor, transistor or other discrete component such as a logic chip. The component or module can also be implemented in a programmable hardware device, such as a field programmable gate array, a programmable array logic, a programmable logic device, etc. The component or module can also be implemented in software and executed by various types of processors. The identified component or module of the executable code may, for example, include one or more physical or logical blocks of computer instructions, which may, for example, be organized as an object, a program or a function. However, the executable files of the identified components or modules do not need to be physically placed together, but may include different instructions stored in different locations, which, when logically connected together, include components or modules and achieve the described purpose of the components or modules.

[0089] In fact, the components or modules of executable code can be single instructions or multiple instructions, and can even be distributed on several different code segments, in different programs, and across several memory devices or processing systems. Specifically, some aspects of the program (such as code rewriting and code analysis) may occur on a processing system (for example, a computer embedded in a sensor or manipulator) different from the processing system that deploys the code (for example, a computer in a data center). Similarly, operational data can be identified and depicted in the components or modules herein, and can be embodied in any suitable form and can be organized in any suitable type of data structure. Operational data can be collected as a single data group, or can be distributed in different locations including different storage devices, and can exist at least partially only as an electronic signal on a system or network. The components or modules can be passive or active, including agents that can be operated to perform the desired function.

[0090] Throughout this specification, plural instances may implement components, operations, or structures described as single instances. Although the individual operations of one or more methods are depicted and described as individual operations, one or more of the individual operations may be performed simultaneously, and it is not necessary to perform these operations in the order shown. The structures and functions presented as individual components in the exemplary configuration may be implemented with combined structures or components. Similarly, the structures and functions presented as single components may be implemented with individual components. These and other variations, modifications, additions, and improvements fall within the scope of the subject matter herein.

[0091] The embodiments described herein are described in sufficient detail to enable those skilled in the art to implement the disclosed teachings. Other embodiments may be used and derived therefrom, so that structural and logical substitutions and changes may be made without departing from the scope of this disclosure. Therefore, this specific embodiment should not be considered restrictive, and the scope of the various embodiments is defined only by the appended claims and the full scope of equivalents to which these claims are entitled.

[0092] The claims may not list every feature disclosed herein, as embodiments may feature a subset of the features described. In addition, embodiments may include fewer features than those disclosed in a particular example. Therefore, the following claims are incorporated into the Detailed Description, where the claims stand on their own as separate embodiments.

[0093] When used in this article, the term "or" can be interpreted in an inclusive or exclusive sense. In addition, plural instances can be provided for the resources, operations or structures described herein as single instances. In addition, the boundaries between various resources, operations, modules, tools and data storage are arbitrary to some extent, and specific operations are shown in the context of a specific description configuration. Other allocations of functions are envisioned and may fall within the scope of various embodiments of the present disclosure. In general, the structure and function presented as a separate resource in an exemplary configuration may be implemented with a combined structure or resource. Similarly, the structure and function presented as a single resource can be implemented with a separate resource. These and other changes, modifications, additions and improvements fall within the scope of the embodiments of the present disclosure, as presented in the appended claims. Therefore, the specification and the accompanying drawings are considered to be illustrative rather than restrictive.

Claims

1. An isolation valve, comprising: Valve body; Valve actuator; as well as A poppet comprising a polytetrafluoroethylene (PTFE) material is movable within the valve body by the valve actuator to retain the PTFE material in sealing engagement with an opposing surface without the intervention of an O-ring.

2. The isolation valve of claim 1, wherein the poppet is a unitary structure consisting entirely of or constructed entirely of the PTFE material.

3. The isolation valve of claim 2, wherein the poppet is free of an O-ring seating passage.

4. The isolation valve of claim 1, wherein the poppet includes a recess or a step.

5. The isolation valve of claim 1 further comprising a poppet valve assembly including a poppet valve housing and a segment defined by the poppet head.

6. The isolation valve of claim 5, wherein the poppet is formed separately from the poppet valve housing.

7. The isolation valve of claim 5 wherein the poppet valve assembly is a unitary structure having the segments defined by the poppet head integrally formed with the poppet valve housing.

8. The isolation valve of claim 5, wherein the poppet includes a recess or step configured to mate with a mating structure inside the poppet valve housing.

9. An O-ring-less poppet for an isolation valve, the isolation valve comprising a valve body and a valve actuator, the O-ring-less poppet comprising: A (PTFE) material section defines a sealing surface, the sealing surface having no O-ring seating channel, the poppet being movable in the valve body by the valve actuator to maintain the sealing surface defined by the PTFE material in sealing engagement with an opposing surface when the isolation valve is closed without the intervention of an O-ring.

10. The o-ringless poppet of claim 9, wherein the o-ringless poppet comprises a recess or a step.

11. The O-ringless poppet of claim 9, wherein the O-ringless poppet is a unitary structure consisting entirely of or constructed entirely of the PTFE material.

12. The o-ringless poppet of claim 9, wherein the isolation valve comprises a poppet valve assembly including a poppet valve housing and the o-ringless poppet.

13. The o-ringless poppet of claim 12, wherein the o-ringless poppet is formed separately from the poppet valve housing.

14. The o-ringless poppet of claim 12, wherein the poppet valve assembly is a unitary structure having the o-ringless poppet integrally formed with the poppet valve housing.

15. The o-ringless poppet of claim 12, wherein the o-ringless poppet includes a recess or step configured to mate with a mating structure inside the poppet valve housing.

16. A poppet valve assembly for an isolation valve, the isolation valve comprising a valve body and a valve actuator, the poppet valve assembly comprising: Poppet valve housing; as well as A poppet including a (PTFE) material section defining a sealing surface, the sealing surface having no O-ring seating channel, the poppet being movable in the valve body by the valve actuator to maintain the sealing surface defined by the PTFE material in sealing engagement with an opposing surface when the isolation valve is closed without the intervention of an O-ring.

17. The poppet valve assembly of claim 16, wherein the poppet includes a recess or a step.

18. The poppet valve assembly of claim 17, wherein the recess or step is configured to mate with a mating structure inside the poppet valve housing.

19. The poppet valve assembly of claim 16, wherein the poppet is a unitary structure consisting entirely of or constructed entirely of the PTFE material.

20. The poppet valve assembly of claim 16, wherein the poppet head is formed separately from the poppet valve housing.

21. The poppet valve assembly of claim 16, wherein the poppet valve assembly is a unitary structure having the poppet head integrally formed with the poppet valve housing.

22. A method of operating an isolation valve, the method comprising: The isolation valve is installed in the gas supply line of the process chamber without the intervention of the poppet O-ring, and the isolation valve comprises: Valve body; Valve actuator; as well as a poppet comprising a polytetrafluoroethylene (PTFE) material, the poppet being movable within the valve body by the valve actuator to retain the PTFE material in sealing engagement with an opposing surface without the intervention of an O-ring; supplying gas via said isolation valve; as well as A substrate is processed in the processing chamber.

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