Cobalt oxide target material, method for manufacturing the same, and use thereof

Abstract

The present disclosure provides a cobalt oxide target material and a preparation method and application thereof, and belongs to the technical field of target materials. The preparation method of the cobalt oxide target material comprises the following steps: sequentially performing vacuumizing, heat treatment and hot pressing treatment on a mold containing cobalt oxide powder to obtain a cobalt oxide target blank; wherein the temperature of the heat treatment is 950-1050 DEG C, and the time is 2-4 h; the temperature of the hot pressing treatment is 950-1050 DEG C, the pressure is 30-50 MPa, and the time is 0.5-2 h; and the cobalt oxide target blank is machined to obtain the cobalt oxide target material. Through the heat treatment and the hot pressing treatment and by adopting specific treatment parameters, the cobalt oxide target material with single phase, high relative density, low resistivity and stable properties is obtained, and the requirements of the target material for magnetron sputtering can be met.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of target materials, in particular to a cobalt oxide target material and a preparation method and application thereof. BACKGROUND

[0002] Cobalt oxide has two oxide phases: CoO and Co3O4, wherein CoO has two different stable structure space groups of rock salt (Fm3m) and wurtzite (P63mc), and rock salt CoO is more stable than wurtzite CoO. Rock salt CoO and Co3O4 are both called direct transition p-type semiconductors, and they are paramagnetic around room temperature.

[0003] The band gap of rock salt and wurtzite CoO is about 2.6 eV and 1.6 eV, respectively, and the band gap of Co3O4 (normal spinel structure) is 1.4-1.8 eV. Materials with a large band gap have a narrow range of light absorption, but can withstand higher voltage and temperature, on the contrary, materials with a small band gap have a wide range of light absorption, but are easy to leak and be broken down. Therefore, in terms of application, rock salt (Fm3m) CoO material will be the preferred material. It has been reported that CoO undergoes an insulator-to-metal transition (referred to as MIT) under high pressure, accompanied by a magnetic collapse. Under high pressure, the anti-ferromagnetic phase of rock salt CoO collapses, and the band gap closes because the three-dimensional electron delocalization of Co is caused by external pressure. The MIT of CoO has been understood as a Mott insulator, like other transition metal oxides (such as NiO, MnO and FeO). The Co / CoO bilayer has a specific exchange bias magnetism. The CoO layer with anti-ferromagnetic properties plays a key role in the exchange bias of the magnetic layer / CoO system, which can be used for the application of memory devices.

[0004] CoO thin films are usually deposited on memory devices by sputtering deposition method, therefore, it is required that the CoO thin film is a single phase; however, CoO powder is easily oxidized to Co3O4 powder in air, resulting in impure phase of CoO thin film, thereby causing the performance of CoO thin film to decrease. Therefore, it is crucial to provide a cobalt oxide raw material that can be used for memory devices and has stable properties. SUMMARY

[0005] The present disclosure aims to overcome the shortcomings of the prior art and provide a cobalt oxide target material and a preparation method and application thereof.

[0006] To achieve the above-mentioned purpose, the technical solution adopted by the present disclosure is as follows: in a first aspect, a preparation method of a cobalt oxide target material is provided, comprising the following steps:

[0007] vacuumizing, heat treating and hot-pressing the mold containing cobalt oxide powder to obtain a cobalt oxide target blank; wherein the temperature of the heat treating is 950-1050 DEG C, and the time is 2-4h; the temperature of the hot-pressing is 950-1050 DEG C, the pressure is 30-50MPa, and the time is 0.5-2h;

[0008] machining the cobalt oxide target blank to obtain a cobalt oxide target material.

[0009] In some embodiments, the step of heat treating comprises: heating at a rate of 5-10 DEG C / min to 950-1050 DEG C, and holding for 2-4h.

[0010] In some embodiments, the step of hot-pressing comprises: increasing the pressure to 30-50MPa at a rate of 0.1-0.6MPa / min, and holding for 0.5-2h at 950-1050 DEG C.

[0011] In some embodiments, the vacuuming is to a vacuum degree less than or equal to 10 -1 Pa.

[0012] In some embodiments, the average particle size of the cobalt oxide powder is less than or equal to 10μm.

[0013] In some embodiments, the purity of the cobalt oxide is greater than or equal to 99.99%.

[0014] In some embodiments, the mold is a graphite mold.

[0015] In some embodiments, the machining comprises grinding, wire cutting and surface treatment.

[0016] In a second aspect, a cobalt oxide target material is provided, which is prepared by the preparation method.

[0017] In a third aspect, an application of the cobalt oxide target material is provided, which is used for magnetron sputtering coating.

[0018] Compared with the prior art, the present disclosure has the following beneficial effects: the present disclosure obtains a cobalt oxide target material with single phase, high relative density, low resistivity and stable properties by heat treating and hot-pressing and using specific processing parameters, and can meet the requirements of magnetron sputtering on target materials. BRIEF DESCRIPTION OF DRAWINGS

[0019] Figure 1 Appearance of the zirconium oxide target material obtained in Example 1;

[0020] Figure 2 XRD pattern of the zirconium oxide target material obtained in Example 1;

[0021] Figure 3 Appearance of the zirconia target obtained in Comparative Example 1;

[0022] Figure 4 XRD pattern of the zirconia target obtained in Comparative Example 1;

[0023] Figure 5 Appearance of the zirconia target obtained in Comparative Example 2;

[0024] Figure 6 Cross-sectional view of the zirconia target obtained in Comparative Example 3;

[0025] Figure 7 SEM view of the cross-section of the zirconia target obtained in Comparative Example 3. DETAILED DESCRIPTION

[0026] For the purposes of this disclosure, a more complete description of the disclosure will be presented. However, the disclosure can be implemented in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and fully convey the scope of the disclosure to those skilled in the art.

[0027] As used herein the terms "a," "an," and "the" include singular and plural referents.

[0028] "Made from" is synonymous with "comprising." The terms "comprising," "including," "having" or "with" as used herein are synonymous with "comprising" and are used inclusively, in an open-ended fashion. That is, a composition, step, method, article, or apparatus that comprises, includes, has, or with a thing also comprises, includes, has, or with other things not expressly mentioned.

[0029] The transitional phrase "consisting of" excludes any element, step, or ingredient not specified. If used in the claims, this phrase shall not be construed to mean that the noted steps or components are the only ones required to implement the disclosure. The term "consisting of" shall not be construed to mean that the noted steps or components are the only ones required to implement the disclosure.

[0030] When amount, concentration or other value or parameter are represented with range, preferred range or the range that a series of upper preferred value and lower preferred value limit are expressed, this should be understood as specifically disclosing all ranges formed by any pairing of any range upper limit or preferred value and any range lower limit or preferred value, and no matter whether this scope is disclosed separately.For example, when disclosing scope " 1-5 ", described scope should be interpreted as including scope " 1-4 ", " 1-3 ", " 1-2 ", " 1-2 and 4-5 ", " 1-3 and 5 " etc.When numerical range is described in this article, unless otherwise stated, otherwise this scope is intended to include its end value and all integers and fractions within this range.

[0031] In these examples, parts and percentages are by mass unless otherwise indicated.

[0032] "Parts by mass" refers to the basic unit of measurement used to express the mass ratio of multiple components. One part can represent any unit of mass, such as 1g or 2.689g. If we say that the mass of component A is a parts and the mass of component B is b parts, this means the ratio of the mass of component A to the mass of component B is a:b. Alternatively, we could say that the mass of component A is aK and the mass of component B is bK (K is an arbitrary number representing a multiplication factor). It's important to note that, unlike parts by mass, the sum of the mass of all components is not limited to 100 parts.

[0033] "And / or" is used to indicate that one or both of the stated situations may occur, for example, A and / or B includes (A and B) and (A or B).

[0034] In order to solve the problem that cobalt oxide raw materials used for sputtering coating in the prior art are easily oxidized, the first aspect of the present disclosure provides a method for preparing a cobalt oxide target, comprising the following steps:

[0035] The mold filled with cobalt oxide powder is sequentially subjected to vacuuming, heat treatment and hot pressing to obtain a cobalt oxide target blank; wherein the heat treatment temperature is 950-1050°C and the time is 2-4 hours; the hot pressing temperature is 950-1050°C, the pressure is 30-50 MPa, and the time is 0.5-2 hours;

[0036] The cobalt oxide target blank is machined to obtain a cobalt oxide target material.

[0037] For example, in different embodiments, the temperature of the heat treatment may be, but is not limited to, 950°C, 960°C, 970°C, 980°C, 990°C, 1000°C, 1010°C, 1020°C, 1030°C, 1040°C, or 1050°C.

[0038] As in different embodiments, the heat treatment time can be, but is not limited to, 2h, 2.5h, 3h, 3.5h, 4h.

[0039] As in different embodiments, the hot-pressing temperature can be, but is not limited to, 950℃, 960℃, 970℃, 980℃, 990℃, 1000℃, 1010℃, 1020℃, 1030℃, 1040℃, 1050℃.

[0040] As in different embodiments, the hot-pressing pressure can be, but is not limited to, 30MPa, 32MPa, 34MPa, 36MPa, 38MPa, 40MPa, 42MPa, 44MPa, 46MPa, 48MPa, 50MPa.

[0041] As in different embodiments, the hot-pressing time can be, but is not limited to, 0.5h, 1h, 1.5h, 2h.

[0042] The present disclosure obtains a cobalt oxide target material with single phase, high relative density, low resistivity and stable properties through heat treatment and hot-pressing treatment and by using specific treatment parameters. If the heat treatment or hot-pressing treatment temperature is too low, it will result in the presence of impurity cobalt trioxide in the cobalt oxide target material and will result in the decrease of the relative density and the increase of the resistivity of the cobalt oxide target material. If the heat treatment or hot-pressing treatment temperature is too high, it will result in the easy dissociation of Co and O in the cobalt oxide target material. Metal Co is a magnetic material. For a target material of a magnetic material, most of the magnetic lines pass through the interior of the ferromagnetic material, which reduces the surface magnetic field of the target material, and a very high voltage is required to ignite the target surface. Therefore, if the target material contains elemental Co, it will affect the stability of the subsequent sputtering and plating of the cobalt oxide target material. If the heat treatment or hot-pressing treatment time is too long, the cobalt oxide crystals in the cobalt oxide target material will be too large and unevenly distributed, which is not conducive to sputtering and plating. If the heat treatment or hot-pressing treatment time is too short, it will result in the presence of impurity cobalt trioxide in the cobalt oxide target material, which is not conducive to sputtering and plating. If the hot-pressing pressure is too low or too high, it will result in the increase of the brittleness of the cobalt oxide target material, which is prone to fragmentation in the subsequent machining process.

[0043] In order to further improve the density of cobalt oxide, the heat treatment temperature is the same as the hot-pressing temperature.

[0044] In some embodiments, the heat treatment step comprises: heating at a rate of 5-10℃ / min to 950-1050℃, and holding for 2-4h.

[0045] As in different embodiments, the heat treatment heating rate can be 5℃ / min, 6℃ / min, 7℃ / min, 8℃ / min, 9℃ / min, 10℃ / min.

[0046] The heating rate of the heat treatment needs to be controlled within a proper range. If the heating rate is too low, the production efficiency is reduced, and impurity cobalt is generated in the cobalt oxide. If the heating rate is too high, the sintering inside the cobalt oxide is uneven, and the yield of the aluminum oxide target is reduced.

[0047] In some embodiments, the hot-pressing treatment comprises: increasing the pressure to 30-50 MPa at a rate of 0.1-0.6 MPa / min, and maintaining the pressure at 950-1050℃ for 0.5-2 h.

[0048] The pressure increasing rate of the heat treatment needs to be controlled within a proper range. If the pressure increasing rate is too low, the production efficiency is reduced, and impurity cobalt is generated in the cobalt oxide. If the pressure increasing rate is too high, the cobalt oxide may have defects such as cracking and holes, and the density of the cobalt oxide target is reduced.

[0049] In some embodiments, the vacuum degree is less than or equal to 10 -1 Pa, for example, but not limited to, 0.2 Pa, 0.4 Pa, 0.6 Pa, 0.8 Pa, 1 Pa.

[0050] In some embodiments, the average particle size of the cobalt oxide powder is less than or equal to 10 μm, for example, but not limited to, 0.1 μm, 0.5 μm, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 5 μm, 7 μm, 9 μm, 10 μm.

[0051] In some embodiments, the purity of the cobalt oxide is greater than or equal to 99.99%, for example, but not limited to, 99.99%, 99.992%, 99.994%, 99.996%, or 99.998%.

[0052] In some embodiments, the mold is a graphite mold.

[0053] In some embodiments, the machining comprises grinding, wire cutting, and surface treatment.

[0054] In a second aspect, a cobalt oxide target is provided, which is prepared by the preparation method.

[0055] The cobalt oxide target provided by the application has a single phase, high density, high purity, high chemical stability, low resistivity, and can meet the high performance requirements as a magnetron sputtering coating material.

[0056] In a third aspect, the application of the cobalt oxide target is provided, and the cobalt oxide target is used for magnetron sputtering coating.

[0057] In order to further illustrate the present application, the cobalt oxide and the preparation method thereof provided by the present application are described in detail below with reference to the accompanying drawings and examples, but they should not be understood as limiting the scope of protection of the present application.

[0058] Example 1

[0059] The present example provides a preparation method of a cobalt oxide target material, comprising the following steps:

[0060] S1: cobalt oxide powder with a purity of 99.995% and an average particle size of 8 μm is loaded into a graphite mold paved with graphite paper;

[0061] S2: the graphite mold loaded with the cobalt oxide powder in step S1 is placed into a vacuum hot pressing furnace, vacuumized to a vacuum degree of 0.8 Pa; then heated to 950 ℃ at a rate of 10 ℃ / min, and kept for 2 h; then pressurized to 40 MPa at a rate of 0.3 MPa / min, and kept for 1 h at a temperature of 950 ℃ and a pressure of 40 MPa; after the keeping and pressurizing, the pressure is released and the furnace is cooled to room temperature, to obtain a cobalt oxide target blank;

[0062] S3: the cobalt oxide target blank obtained in step S2 is subjected to grinding, wire cutting and surface treatment, to obtain a cobalt oxide target material.

[0063] Example 2

[0064] The present example provides a preparation method of a cobalt oxide target material, comprising the following steps:

[0065] S1: cobalt oxide powder with a purity of 99.995% and an average particle size of 8 μm is loaded into a graphite mold paved with graphite paper;

[0066] S2: the graphite mold loaded with the cobalt oxide powder in step S1 is placed into a vacuum hot pressing furnace, vacuumized to a vacuum degree of 0.8 Pa; then heated to 950 ℃ at a rate of 10 ℃ / min, and kept for 2 h; then pressurized to 40 MPa at a rate of 0.3 MPa / min, and kept for 1 h at a temperature of 950 ℃ and a pressure of 40 MPa; after the keeping and pressurizing, the pressure is released and the furnace is cooled to room temperature, to obtain a cobalt oxide target blank;

[0067] S3: the cobalt oxide target blank obtained in step S2 is subjected to grinding, wire cutting and surface treatment, to obtain a cobalt oxide target material.

[0068] Example 3

[0069] The present example provides a preparation method of a cobalt oxide target material, comprising the following steps:

[0070] S1: Cobalt oxide powder with a purity of 99.995% and an average particle size of 8 μm was loaded into a graphite mold lined with graphite paper;

[0071] S2: The graphite mold loaded with cobalt oxide powder in step S1 was placed into a vacuum hot pressing furnace, vacuumed to a vacuum degree of 0.8 Pa, then heated to 1000 ℃ at a rate of 8 ℃ / min, and kept at 1000 ℃ for 3 h; then pressurized to 50 MPa at a rate of 0.6 MPa / min, kept at 1000 ℃ and 50 MPa for 0.5 h, after the end of the keeping, the pressure was released and the furnace was cooled to room temperature, to obtain a cobalt oxide target blank;

[0072] S3: The cobalt oxide target blank obtained in step S2 was subjected to grinding, wire cutting and surface treatment, to obtain a cobalt oxide target material.

[0073] Comparative Example 1

[0074] This comparative example provides a method for preparing a cobalt oxide target material, which is different from Example 1 only in that step S2 is different, wherein step S2 of this comparative example is as follows: the graphite mold loaded with cobalt oxide powder in step S1 was placed into a vacuum hot pressing furnace, vacuumed to a vacuum degree of 0.8 Pa, then heated to 950 ℃ at a rate of 10 ℃ / min, and then pressurized to 40 MPa at a rate of 0.3 MPa / min, kept at 900 ℃ and 40 MPa for 3 h, after the end of the keeping, the pressure was released and the furnace was cooled to room temperature, to obtain a cobalt oxide target blank; the remaining steps and parameters are the same as those of Example 1.

[0075] Comparative Example 2

[0076] This comparative example provides a method for preparing a cobalt oxide target material, which is different from Example 1 only in that the keeping time in step S2 is 5 h; the remaining steps and parameters are the same as those of Example 1.

[0077] Comparative Example 3

[0078] This comparative example provides a method for preparing a cobalt oxide target material, which is different from Example 1 only in that the temperature of the heat treatment and the hot pressing treatment in step S2 are both 1100 ℃; the remaining steps and parameters are the same as those of Example 1.

[0079] Comparative Example 4

[0080] This comparative example provides a method for preparing a cobalt oxide target material, which is different from Example 1 only in that the temperature of the heat treatment and the hot pressing treatment in step S2 are both 900 ℃; the remaining steps and parameters are the same as those of Example 1.

[0081] Comparative Example 5

[0082] The comparative example provides a preparation method of a cobalt oxide target material, which is only different from example 1 in that step S2 is different. In the comparative example, step S2 is as follows: the graphite mold loaded with the cobalt oxide powder in step S1 is placed into a vacuum hot pressing furnace, vacuumized to a vacuum degree of 0.8 Pa; then heated to 900 ℃ at a rate of 10 ℃ / min, and kept for 2 h; then heated to 950 ℃ at a rate of 10 ℃ / min, and at the same time, pressurized to 40 MPa at a rate of 0.3 MPa / min, kept for 1 h at a temperature of 950 ℃ and a pressure of 40 MPa, after the end of the keeping, depressurized and furnace-cooled to room temperature to obtain a cobalt oxide target blank; and the rest of the steps and parameters are the same as those in example 1.

[0083] Comparative example 6

[0084] The comparative example provides a preparation method of a cobalt oxide target material, which is only different from example 1 in that step S2 is different. In the comparative example, step S2 is as follows: the graphite mold loaded with the cobalt oxide powder in step S1 is placed into a vacuum hot pressing furnace, vacuumized to a vacuum degree of 0.8 Pa; then heated to 950 ℃ at a rate of 10 ℃ / min, and kept for 2 h; then heated to 1100 ℃ at a rate of 10 ℃ / min, and at the same time, pressurized to 40 MPa at a rate of 0.3 MPa / min, kept for 1 h at a temperature of 1100 ℃ and a pressure of 40 MPa, after the end of the keeping, depressurized and furnace-cooled to room temperature to obtain a cobalt oxide target blank; and the rest of the steps and parameters are the same as those in example 1.

[0085] Comparative example 7

[0086] The comparative example provides a preparation method of a cobalt oxide target material, which is only different from example 1 in that the pressure in the hot pressing treatment in step S2 is 25 MPa; and the rest of the steps and parameters are the same as those in example 1.

[0087] Comparative example 8

[0088] The comparative example provides a preparation method of a cobalt oxide target material, which is only different from example 1 in that the pressure in the hot pressing treatment in step S2 is 55 MPa; and the rest of the steps and parameters are the same as those in example 1.

[0089] Comparative example 9

[0090] The comparative example provides a preparation method of a cobalt oxide target material, which is only different from example 1 in that the pressurizing rate in the hot pressing treatment in step S2 is 0.05 MPa / min; and the rest of the steps and parameters are the same as those in example 1.

[0091] Comparative example 10

[0092] The comparative example provides a preparation method of a cobalt oxide target, which is only different from example 1 in that the heating rate of the heat treatment in step S2 is 3 ℃ / min; and the other steps and parameters are the same as those of example 1.

[0093] Comparative example 11

[0094] The comparative example provides a preparation method of a cobalt oxide target, which is only different from example 1 in that the heating rate of the heat treatment in step S2 is 3 ℃ / min; and the other steps and parameters are the same as those of example 1.

[0095] Comparative example 12

[0096] The comparative example provides a preparation method of a cobalt oxide target, which is only different from example 1 in that the heating rate of the heat treatment in step S2 is 3 ℃ / min; and the other steps and parameters are the same as those of example 1.

[0097] The following tests are performed on the cobalt oxide targets of examples 1-3 and comparative examples 1-12, and the specific test methods are as follows:

[0098] (1) Relative density: tested according to the Archimedes drainage method;

[0099] (2) Phase: tested by an X-ray diffractometer;

[0100] (3) Microstructure: the cross section of the cobalt oxide target is tested by a scanning electron microscope; (4) Resistivity: tested by a four-probe resistance tester;

[0101] (5) Appearance: the surface of the target is observed by visual observation.

[0102] The test results are shown in Table 1 and Figures 1-7 .

[0103] Table 1

[0104]

[0105]

[0106] As can be seen from Table 1, the relative density of the cobalt oxide target obtained by the present disclosure is 98.6-99.5%, the phase is single, and the resistivity is lower than 200 Ω / cm.

[0107] Figure 1 The figure is the appearance of the zirconium oxide target obtained in example 1; Figure 2 The figure is the XRD pattern of the zirconium oxide target obtained in example 1; as can be seen from Figure 1 and Figure 2 , the cobalt oxide target obtained by the present disclosure is black, and the surface is free of spots, and only CoO phase exists.

[0108] Figure 3 This is the appearance of the zirconia target obtained in Comparative Example 1; Figure 3 The XRD pattern of the zirconium oxide target obtained in Comparative Example 1 is shown in FIG. Figure 3 and Figure 4 It can be seen that the zirconium oxide target obtained in Comparative Example 1 is black and has many light gray spots on the surface. The light gray spots are scraped off the target and tested with an X-ray diffractometer, which shows that they are Co3O4, indicating that the cobalt oxide target obtained in the comparative example contains more Co3O4 impurities.

[0109] Figure 5 This is the appearance of the zirconium oxide target obtained in Comparative Example 2; Figure 5 It can be seen that the zirconium oxide target obtained in Comparative Example 2 is black, and has light gray spot edges on the surface. The light gray spot edges are scraped off from the target and tested with an X-ray diffractometer, which shows that it is Co elemental, indicating that the cobalt oxide target obtained in the comparative example contains more elemental Co impurities.

[0110] Figure 6 The cross-sectional view of the zirconia target obtained in Comparative Example 3 is shown in FIG. Figure 6 It can be seen that the crystal structure of the cobalt oxide obtained in Comparative Example 3 is unevenly distributed. The cross section of the zirconium oxide target obtained in Comparative Example 3 was observed using a scanning electron microscope. The results are as follows Figure 7 As shown, it was found that unevenly distributed metal spots existed inside the cobalt oxide obtained in Comparative Example 3.

[0111] Finally, it should be noted that the above embodiments are used to illustrate the technical solutions of the present disclosure rather than to limit the scope of protection of the present disclosure. Although the present disclosure has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present disclosure may be modified or replaced by equivalents without departing from the essence and scope of the technical solutions of the present disclosure.

Claims

1. A method for preparing a cobalt oxide target, characterized in that: The following steps are involved: S1: placing cobalt oxide powder having a purity greater than or equal to 99.99% and an average particle size less than or equal to 10 μm into a mold; S2: placing the mold filled with cobalt oxide powder in step S1 into a vacuum hot pressing furnace and evacuating the mold; then heating the mold to 950-1050°C at a rate of 5-10°C / min and holding the temperature for 2-4 hours; then increasing the pressure to 30-50 MPa at a rate of 0.1-0.6 MPa / min, holding the temperature at 950-1050°C and the pressure at 30-50 MPa for 0.5-2 hours. After the holding period, releasing the pressure and cooling the mold to room temperature, thereby obtaining a cobalt oxide target blank; S3: Machining the cobalt oxide target blank obtained in step S2 to obtain a cobalt oxide target material.

2. The method for preparing a cobalt oxide target according to claim 1, wherein: The vacuum is evacuated to a vacuum degree of less than or equal to 10 -1 Pa.

3. The method for preparing a cobalt oxide target according to claim 1, wherein: The mold is a graphite mold.

4. The method for preparing a cobalt oxide target according to claim 1, wherein: The machining includes grinding, wire cutting and surface treatment.

5. A cobalt oxide target, characterized in that: The cobalt oxide target is prepared by the preparation method according to any one of claims 1 to 4.

6. A use of the cobalt oxide target material as claimed in claim 5, characterized in that: The cobalt oxide target is used for magnetron sputtering coating.

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