Sensing device

Abstract

The invention provides a sensing device. The sensing device comprises a substrate; the circuit layer is arranged on the substrate, and the circuit layer comprises a switch element; the reflecting element is arranged on the circuit layer, the reflecting element comprises a first reflecting part and a second reflecting part which are separated from each other, the first reflecting part is electrically connected with the switch element, and the second reflecting part receives a voltage; the reflecting element is arranged on the substrate, the sensing element is arranged on the reflecting element, a gap is formed between the sensing element and the reflecting element, and the sensing element comprises a first absorption part, a second absorption part and a sensing part arranged on the first absorption part and the second absorption part; wherein in the normal direction of the sensing device, the first absorption part and the second reflection part are not overlapped, and the second absorption part and the first reflection part are not overlapped.

Description

Technical Field

[0001] The present disclosure relates to a sensing device, and more particularly to a sensing device having a reflective element. Background Art

[0002] The sensing device has the advantages of detection without contact with the object, high sensitivity, and high noise resistance. It can be applied to object distance sensing, temperature detection, human body detection, etc., and has high application value.

[0003] Generally, the bottom of the sensing layer in the sensing device can be designed to be suspended to reduce the impact of heat conduction on the sensing signal. However, the sensing layer will generate an electrostatic field attraction with the wiring below the suspended structure, causing the sensing layer to tilt, which in turn leads to heat dissipation, thereby affecting the sensing signal and sensing effect.

[0004] Therefore, there is an urgent need to provide a sensing device in order to improve the existing defects. Summary of the invention

[0005] The present disclosure provides a sensing device, characterized in that it comprises: a substrate; a circuit layer disposed on the substrate, the circuit layer comprising a switch element; a reflective element disposed on the circuit layer, the reflective element comprising a first reflective portion and a second reflective portion separated from each other, wherein the first reflective portion is electrically connected to the switch element, and the second reflective portion receives a voltage; and a sensing element disposed on the reflective element, and the sensing element and the reflective element are separated by a gap, wherein the sensing element comprises a first absorbing portion, a second absorbing portion, and a sensing portion disposed on the first absorbing portion and the second absorbing portion; wherein, in the normal direction of the sensing device, the first absorbing portion and the second reflecting portion do not overlap, and the second absorbing portion and the first reflecting portion do not overlap. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1 is a schematic diagram of an equivalent circuit of a sensing device according to an embodiment of the present disclosure;

[0007] Figure 2A is a schematic top view of a portion of a sensing device according to an embodiment of the present disclosure;

[0008] Figure 2B yes Figure 2A A schematic cross-sectional view of the line segment A-A';

[0009] Figure 3A is a schematic top view of a portion of a sensing device according to an embodiment of the present disclosure;

[0010] Figure 3B yes Figure 3A Schematic diagram of the cross section of line segment BB'.

[0011] In the above drawings, the meanings of the reference numerals are as follows:

[0012] 1 substrate;

[0013] 2 circuit layer;

[0014] 21 buffer layer;

[0015] 22 active layer;

[0016] 23 a first insulating layer;

[0017] 24 first metal layer;

[0018] 241 gate;

[0019] 25 second insulating layer;

[0020] 26 second metal layer;

[0021] 261 source;

[0022] 262 draw pole;

[0023] 27 third insulating layer;

[0024] 3 reflective element;

[0025] 3A first reflecting portion;

[0026] 3B second reflecting part;

[0027] 4 supporting elements;

[0028] 4A first support portion;

[0029] 4A-1, 4B-1 turning sections;

[0030] 4A-2, 4B-2 straight line segments;

[0031] 4B second supporting portion;

[0032] 41 support layer;

[0033] 42 third metal layer;

[0034] 51 absorption layer;

[0035] 51A first absorbing portion;

[0036] 51B second absorption part;

[0037] 52 fourth metal layer;

[0038] 53 first passivation layer;

[0039] 54 sensing unit;

[0040] 55 second passivation layer;

[0041] DL data line;

[0042] SL Scan Line;

[0043] Dr1, Dr2 drivers;

[0044] E Electronic components;

[0045] G Gap;

[0046] S, S1, S3 sensing unit;

[0047] S2 another sensing unit;

[0048] S11, S31 sensing elements;

[0049] S12 switch element;

[0050] S21 another sensing element;

[0051] TH through hole;

[0052] W1, W2 wires;

[0053] Z normal direction. DETAILED DESCRIPTION

[0054] The following is an explanation of the implementation of the present disclosure through specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways for different viewpoints and applications without departing from the spirit of the present invention.

[0055] It should be noted that, in this document, unless otherwise specified, "having an element" is not limited to having a single element, but may have one or more elements. Furthermore, the ordinal numbers used in the specification and claims, such as "first" and "second", to modify the elements of the claims, do not themselves imply or represent any previous ordinal numbers of the claimed elements, nor do they represent the order of one claimed element and another claimed element, or the order of the manufacturing method. The use of these ordinals is only used to make a claimed element with a certain name clearly distinguishable from another claimed element with the same name.

[0056] Certain words are used throughout the specification and the claims that follow to refer to specific components. It will be understood by those skilled in the art that electronic equipment manufacturers may refer to the same components by different names. It is not intended herein to distinguish between components that have the same function but different names. In the following specification and claims, words such as "include", "contain", "have" are open-ended words, and therefore should be interpreted as "contain but not limited to..." Therefore, when the terms "include", "contain" and / or "have" are used in the description of the present disclosure, they specify the presence of corresponding features, regions, steps, operations and / or components, but do not exclude the presence of one or more corresponding features, regions, steps, operations and / or components.

[0057] In the text, the terms "about", "approximately", "substantially", and "roughly" generally mean within 10%, within 5%, within 3%, within 2%, within 1%, or within 0.5% of a given value or range. The numbers given here are approximate numbers, that is, in the absence of specific instructions for "about", "approximately", "substantially", and "roughly", the meanings of "about", "approximately", "substantially", and "roughly" can still be implied. In addition, the terms "range from a first value to a second value" and "range between a first value and a second value" mean that the range includes the first value, the second value, and other values ​​therebetween.

[0058] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which this disclosure belongs. It is understood that these terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with the background or context of the relevant technology and the present disclosure, and should not be interpreted in an idealized or overly formal manner unless specifically defined herein.

[0059] In addition, relative terms such as "below" or "bottom" and "above" or "top" may be used in the embodiments to describe the relative relationship of one element of the diagram to another element. It is understood that if the device of the diagram is turned upside down, the element described on the "below" side will become the element on the "above" side. When a corresponding component (such as a film layer or area) is referred to as "on another component", it can be directly on the other component, or there can be other components between the two. On the other hand, when a component is referred to as "directly on another component", there is no component between the two. In addition, when a component is referred to as "on another component", the two have an up-and-down relationship in the top-view direction, and this component can be above or below the other component, and this up-and-down relationship depends on the orientation of the device.

[0060] In the present disclosure, any two values ​​or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0061] It should be noted that the technical solutions provided in the following different embodiments can be replaced, combined or mixed with each other to form another embodiment without violating the spirit of the present disclosure.

[0062] Figure 1 Schematic diagram of an equivalent circuit of a sensing device according to some embodiments of the present disclosure.

[0063] In some embodiments of the present disclosure, Figure 1 As shown, the sensing device may include: a substrate 1; a plurality of sensing units S disposed on the substrate 1; and drivers Dr1 and Dr2 disposed on the substrate 1, wherein the drivers Dr1 and Dr2 are electrically connected to each sensing unit S, respectively.

[0064] More specifically, if Figure 1 As shown, each sensing unit S may include: a sensing element S11 for sensing light within a wavelength range; and a switch element S12 electrically connected to the sensing element S11. Drivers Dr1 and Dr2 may be electrically connected to the switch element S12 in each sensing unit S through a scan line SL and a data line DL, respectively, to transmit or receive signals, thereby achieving the purpose of sensing. For example, the driver Dr1 may transmit a control signal through the scan line SL to control the sensing unit S; or, the driver Dr2 may receive a sensing signal generated by the sensing unit S through the data line DL. Therefore, in some embodiments of the present disclosure, the substrate 1 and the elements thereon may be formed as a sensing array substrate.

[0065] In some embodiments of the present disclosure, Figure 1 As shown, the sensing device may further include an electronic component E, which is electrically connected to the drivers Dr1 and Dr2 respectively. More specifically, the electronic component E may be electrically connected to the driver Dr1 through a wire W1, and electrically connected to the driver Dr2 through a wire W2, and may be used, for example, to control or process a signal transmitted to the driver Dr1 or receive a signal from the driver Dr2. In one embodiment of the present disclosure, the electronic component E may be an integrated circuit (IC), but the present disclosure is not limited thereto. In addition, although Figure 1One driver Dr1 and one driver Dr2 are taken as examples. However, in other embodiments of the present disclosure, the sensing device may include multiple drivers Dr1 and / or multiple drivers Dr2, which may be electrically connected to the electronic element E through multiple wires W1 and / or wires W2, respectively.

[0066] Figure 2A FIG. 4 is a schematic top view of a portion of a sensing device according to an embodiment of the present disclosure. Figure 2B for Figure 2A A schematic cross-sectional view of the line segment A-A'. For the convenience of explanation, Figure 2A Some components (such as sensing components) are omitted.

[0067] In one embodiment of the present disclosure, Figure 2A and Figure 2B As shown, the sensing device may include: a substrate 1; a circuit layer 2, which is arranged on the substrate 1, wherein the circuit layer 2 includes a switch element S12; a reflective element 3, which is arranged on the circuit layer 2, and the reflective element 3 includes a first reflective portion 3A and a second reflective portion 3B separated from each other, wherein the first reflective portion 3A is electrically connected to the switch element S12, and the second reflective portion 3B receives a voltage; and a sensing element S11, which is arranged on the reflective element 3, and the sensing element S11 is separated from the reflective element 3 by a gap G, wherein the sensing element S11 includes a first absorption portion 51A, a second absorption portion 51B and a sensing portion 54 arranged on the first absorption portion 51A and the second absorption portion 51B; wherein, in the normal direction Z of the sensing device, the first absorption portion 51A and the second reflection portion 3B do not overlap, and the second absorption portion 51B and the first reflection portion 3A do not overlap. The present disclosure can reduce electrostatic attraction between the absorption part and the reflection part, improve heat dissipation, and thus enhance sensing efficiency by staggering the first absorption part 51A and the second reflection part 3B, and staggering the second absorption part 51B and the first reflection part 3A.

[0068] In one embodiment of the present disclosure, Figure 2A and Figure 2BAs shown, the circuit layer 2 may include: a buffer layer 21, which is disposed on the substrate 1; an active layer 22, which is disposed on the buffer layer 21; a first insulating layer 23, which is disposed on the active layer 22; a first metal layer 24, which is disposed on the first insulating layer 23, and the first metal layer 24 includes a gate 241 and a scan line SL, wherein the gate 241 is electrically connected to the scan line SL; a second insulating layer 25, which is disposed on the first metal layer 24; a second metal layer 26, which is disposed on the second insulating layer 25, and the second metal layer 26 includes a source 261, a drain 262 and a data line DL, wherein the source 261 is electrically connected to the data line DL; and a third insulating layer 27, which is disposed on the second metal layer 26. The active layer 22, the first insulating layer 23, the gate 241, the second insulating layer 25, the source 261 and the drain 262 form a switch element S12.

[0069] In one embodiment of the present disclosure, Figure 2A and Figure 2B As shown, the reflective element 3 is disposed on the third insulating layer 27, wherein the first reflective portion 3A of the reflective element 3 can be electrically connected to the drain 262 through the through hole TH of the third insulating layer 27. The second reflective portion 3B of the reflective element 3 can be electrically connected to an external power source (not shown) to provide a voltage to the sensing device. In one embodiment of the present disclosure, the voltage can be a common voltage. In addition, in some embodiments of the present disclosure, the reflective element 3 can be used to reflect light to the sensing element S11 (e.g., the absorption layer 51), which can improve the utilization rate of light and improve the sensing effect.

[0070] In one embodiment of the present disclosure, Figure 2A and Figure 2B As shown, the sensing device may include: a support layer 41, which is disposed on the reflective element 3; and a third metal layer 42, which is disposed on the support layer 41, wherein the support layer 41 and the third metal layer 42 may form a support element 4 for supporting the sensing element S11 above. Therefore, the sensing device may further include a support element 4, which is disposed between the reflective element 3 and the sensing element S11, and the support element 4 includes a first support portion 4A and a second support portion 4B separated from each other, wherein the first support portion 4A connects the first absorption portion 51A of the sensing element S11 and the first reflection portion 3A of the reflection element 3, and the second support portion 4B connects the second absorption portion 51B of the sensing element S11 and the second reflection portion 3B of the reflection element 3. In more detail, the first support portion 4A is electrically connected to the first absorption portion 51A and the first reflection portion 3A, respectively, and the second support portion 4B is electrically connected to the second absorption portion 51B and the second reflection portion 3B, respectively. In some embodiments of the present disclosure, such as Figure 2BAs shown, the support layer 41 can allow a gap G to exist between the sensing element S11 and the reflective element 3. The gap G can be formed by respectively setting a sacrificial layer on the reflective element 3 and the support element 4 and then removing the sacrificial layer. The gap G can be used to prevent heat conduction from affecting the sensing signal.

[0071] In some embodiments of the present disclosure, Figure 2B As shown, the sensing device may further include: an absorption layer 51, disposed on the support layer 41, the absorption layer 51 includes a first absorption part 51A and a second absorption part 51B; a fourth metal layer 52, disposed on the absorption layer 51; a first passivation layer 53, disposed on the absorption layer 51 and the fourth metal layer 52; a sensing part 54, disposed on the first passivation layer 53; a second passivation layer 55, disposed on the sensing part 54, wherein the absorption layer 51, the fourth metal layer 52, the first passivation layer 53, the sensing part 54 and the second passivation layer 55 form a sensing element S11. In the present disclosure, heat can be generated by absorbing light of a specified wavelength range by the absorption layer 51, and the heat is transferred to the sensing part 54 through the fourth metal layer 52 and the first passivation layer 53. The sensing part 54 changes resistance with the change of heat to form an electrical signal, so that the sensing element S11 can achieve the purpose of sensing light of a specified wavelength range. In some embodiments of the present disclosure, the specified wavelength range may be between 8μm and 14μm, but the present disclosure is not limited thereto.

[0072] In some embodiments of the present disclosure, the substrate 1 may be a hard substrate or a soft substrate. The material of the substrate 1 may include quartz, glass, wafer, sapphire, resin, epoxy resin, polycarbonate (PC), polyimide (PI), polypropylene (PP), polyethyleneterephthalate (PET), polymethylmethacrylate (PMMA), other plastic materials or combinations thereof, but the present disclosure is not limited thereto. In some embodiments of the present disclosure, the materials of the buffer layer 21, the first insulating layer 23, the second insulating layer 25 and the third insulating layer 27 may be the same or different, wherein the materials of the buffer layer 21, the first insulating layer 23, the second insulating layer 25 and the third insulating layer 27 may each include silicon nitride, silicon oxide, silicon oxynitride, silicon carbonitride or a combination thereof, but the present disclosure is not limited thereto. In some embodiments of the present disclosure, the material of the active layer 22 may include amorphous silicon, polycrystalline silicon (e.g., low temperature polycrystalline silicon (LTPS)), or an oxide semiconductor (e.g., indium gallium zinc oxide (IGZO)), but the present disclosure is not limited thereto. In some embodiments of the present disclosure, the materials of the first metal layer 24, the second metal layer 26, and the reflective element 3 may be the same or different, wherein the materials of the first metal layer 24, the second metal layer 26, and the reflective element 3 may each include gold, silver, copper, palladium, platinum (Pt), ruthenium (Ru), aluminum, cobalt, nickel, titanium, molybdenum (Mo), manganese, zinc, alloys thereof, or combinations thereof, but the present disclosure is not limited thereto.

[0073] In some embodiments of the present disclosure, the material of the support layer 41 may include titanium nitride (TiN), titanium aluminide (TiAl), titanium aluminium nitride (TiAlN), titanium aluminum oxide (TiAlO), titanium silicon aluminum (TiSiAl), titanium tungsten (TiW), titanium tungsten nitride (TiWN), aluminum nitride (AlNx), or a combination thereof, but the present disclosure is not limited thereto. In some embodiments of the present disclosure, the materials of the third metal layer 42 and the fourth metal layer 52 may be the same or different, wherein the materials of the third metal layer 42 and the fourth metal layer 52 may each include molybdenum (Mo), molybdenum nitride (MoN), molybdenum tungsten (MoW), tungsten (W), or a combination thereof, but the present disclosure is not limited thereto. In some embodiments of the present disclosure, the material of the absorption layer 51 may include titanium, titanium nitride (TiN), platinum, gold, nickel, niobium (Nb), alloys thereof, or combinations thereof, but the present disclosure is not limited thereto. In some embodiments of the present disclosure, the materials of the first passivation layer 53 and the second passivation layer 55 may be the same or different, wherein the materials of the first passivation layer 53 and the second passivation layer 55 may each include silicon oxide, silicon oxynitride, silicon nitride, aluminum oxide, resin, polymer, photoresist, or combinations thereof, but the present disclosure is not limited thereto. In some embodiments of the present disclosure, the material of the sensing portion 54 may include amorphous silicon, vanadium oxide (VOx), yttrium barium copper oxide (YBaCuO), silicon germanium oxide (GeSiO), silicon-germanium (SiGe), lanthanum strontium manganese oxide (BiLaSrMnO), or combinations thereof, but the present disclosure is not limited thereto. In some embodiments of the present disclosure, the sensing portion 54 includes a thermistor, but the present disclosure is not limited thereto.

[0074] In some embodiments of the present disclosure, Figure 2A and Figure 2B As shown, in the normal direction Z of the sensing device, the first reflective portion 3A and the second reflective portion 3B do not overlap, and the first supporting portion 4A and the second supporting portion 4B overlap. Figure 2AAs shown, when viewed in the normal direction Z of the sensing device, the first support portion 4A may include a plurality of turning segments 4A-1 and a plurality of straight segments 4A-2 connected to both ends of the turning segments 4A-1. Similarly, the second support portion 4B may also include a plurality of turning segments 4B-1 and a plurality of straight segments 4B-2 connected to both ends of the turning segments 4B-1. The turning segments may be U-shaped, but the present disclosure is not limited thereto. When the first support portion 4A and the second support portion 4B have the above-mentioned design, the heat dissipation phenomenon can be improved, thereby enhancing the sensing effect.

[0075] In some embodiments of the present disclosure, Figure 2B As shown, in the normal direction Z of the sensing device, the first absorption portion 51A overlaps with the switch element S12, and the second absorption portion 51B does not overlap with the switch element S12. More specifically, the first absorption portion 51A may overlap with the switch element S12 electrically connected thereto, while the second absorption portion 51B does not overlap with the switch element S12, but the present disclosure is not limited thereto. In some embodiments of the present disclosure, although not shown in the figure, in the normal direction Z of the sensing device, the first absorption portion 51A and the second absorption portion 51B may overlap with the switch element S12, respectively, but the present disclosure is not limited thereto.

[0076] Figure 3A FIG. 1 is a schematic top view of a portion of a sensing device in some embodiments of the present disclosure. Figure 3B for Figure 3A A schematic cross-sectional view of the line segment B-B'. Figure 3A The sensing device and Figure 2A Similar, except for the following differences. In addition, for ease of explanation, Figure 3A and Figure 3B Some components are omitted (e.g. Figure 3A The sensing element is omitted. Figure 3A and Figure 3B Some switching elements are omitted).

[0077] In some embodiments of the present disclosure, Figure 3A and Figure 3B As shown, the support element 4 may be arranged corresponding to a plurality of sensing units S. In more detail, the sensing device may include a plurality of sensing units S, which are arranged adjacent to each other. For example, the sensing device may include: a sensing unit S1; and another sensing unit S2, which is arranged adjacent to the sensing unit S1. Among them, the sensing unit S1 may include a sensing element S11; and a switch element S12, which is electrically connected to the sensing element S11. Similarly, another sensing unit S2 may include another sensing element S21, which is arranged adjacent to the sensing element S11; and another switch element (not shown in the figure), which is electrically connected to the other sensing element S21. In some embodiments of the present disclosure, as Figure 3BAs shown, in the normal direction Z of the sensing device, the first support portion 4A can overlap with the sensing element S11 and another sensing element S21. Similarly, when the sensing device includes other sensing units (such as the sensing unit S3), the second support portion 4B can overlap with the sensing elements S11 and S31 respectively in the normal direction Z of the sensing device. When the support element 4 has the above-mentioned design, the heat dissipation phenomenon can be improved, thereby enhancing the sensing effect.

[0078] In some embodiments of the present disclosure, Figure 3A and Figure 3B As shown, in the normal direction Z of the sensing device, the sensing element S11 and the switch element S12 electrically connected thereto do not overlap. In other words, in some embodiments of the present disclosure, Figure 3B As shown, in the normal direction Z of the sensing device, the first absorption portion 51A and the switch element S12 electrically connected thereto do not overlap.

[0079] The above specific embodiments are to be construed as merely illustrative, and not limitative of the remainder of the disclosure in any way whatsoever.

Claims

1. A sensing device, characterized in that: Include: a substrate; A circuit layer is disposed on the substrate, and the circuit layer includes a switch element; a reflective element disposed on the circuit layer, the reflective element comprising a first reflective portion and a second reflective portion separated from each other, wherein the first reflective portion is electrically connected to the switch element, and the second reflective portion receives a voltage; and a sensing element disposed on the reflective element, and the sensing element and the reflective element are separated by a gap, wherein the sensing element comprises a first absorbing portion, a second absorbing portion, and a sensing portion disposed on the first absorbing portion and the second absorbing portion; Wherein, in the normal direction of the sensing device, the first absorption portion and the second reflection portion do not overlap, and the second absorption portion and the first reflection portion do not overlap.

2. The sensing device according to claim 1, characterized in that It further includes a supporting element disposed between the reflecting element and the sensing element, the supporting element including a first supporting portion and a second supporting portion separated from each other, wherein the first supporting portion connects the first absorbing portion and the first reflecting portion, and the second supporting portion connects the second absorbing portion and the second reflecting portion.

3. The sensing device according to claim 2, characterized in that: The first supporting portion includes a plurality of turning segments and a plurality of straight line segments connected to two ends of the turning segments.

4. The sensing device according to claim 3, characterized in that: The turning sections are U-shaped.

5. The sensing device according to claim 2, characterized in that: It further comprises another sensing element disposed adjacent to the sensing element, wherein in the normal direction of the sensing device, the first supporting portion overlaps with the another sensing element.

6. The sensing device according to claim 1, characterized in that The circuit layer further includes a scan line and a data line, and the switch element further includes a gate, a source and a drain, wherein the gate is electrically connected to the scan line, the source is electrically connected to the data line, and the drain is electrically connected to the first reflective portion.

7. The sensing device according to claim 1, characterized in that This voltage is the common voltage.

8. The sensing device according to claim 1, characterized in that The sensing portion includes a thermistor.

9. The sensing device according to claim 1, characterized in that: In the normal direction of the sensing device, the first absorption portion overlaps the switch element.

10. The sensing device according to claim 1, characterized in that: In the normal direction of the sensing device, the first absorbing portion and the switching element do not overlap.

Images