Laser protection device and protection method of photoelectric detection system

Abstract

The embodiment of the invention relates to the technical field of photoelectric detection, in particular to a laser protection device and protection method of a photoelectric detection system, the protection device comprises a phase change laser protection device and a temperature control device, the phase change laser protection device is arranged near a primary image plane of the photoelectric detection system; the phase change temperature of the phase change laser protection layer of the phase change laser protection device is slightly higher than the highest achievable temperature of a photoelectric detection system, so that the phase change laser protection layer is always below the phase change temperature and always keeps a high-transmittance state when no strong laser irradiation exists, the temperature rise required by phase change during strong laser irradiation is small, the laser initial protection threshold value is reduced, and the protection effect is improved. The protection efficiency on the strong laser is ensured; the temperature control device is used for controlling the temperature of the phase change laser protection device, and the temperature control point of the phase change laser protection device is kept below the phase change temperature by controlling the current of the temperature control coil. According to the protection device, the photoelectric detection system can well meet the use requirement under the intense laser threat environment.

Description

Technical Field

[0001] The embodiments of the present application relate to the field of photoelectric detection technology, and in particular to a laser protection device and protection method for a photoelectric detection system. Background Art

[0002] The photoelectric detection system is an important sensing system in human production and life. It usually adopts a passive detection method and has many advantages such as high detection and tracking accuracy, concealed detection process, and strong anti-interference ability. It can play an important role in the modern complex electromagnetic environment.

[0003] The photoelectric detection system uses detectors in different wavelength ranges to respond to the radiation information of various targets. Its working bands include visible light, near infrared, short-wave infrared, medium-wave infrared, long-wave infrared, dual-band infrared, two-color infrared, etc. Among them, visible light imaging is mainly through the reflection of light, and its imaging is related to the wavelength of the light source and the reflectivity of the object. The visual effect of visible light imaging is better, and it can accurately reflect the color attributes and spatial position of the target. Infrared thermal imaging mainly distinguishes between targets and backgrounds by the difference in infrared radiation intensity caused by the temperature difference between objects. Infrared thermal imaging has good environmental adaptability and can be used at night and in foggy weather. Both visible light detection and infrared detection are important means of obtaining information. The photoelectric detection system combines the two and complements each other, allowing it to work all day long, thereby obtaining more target information.

[0004] However, strong lasers can cause photoelectric detection systems to fail temporarily or permanently, which is the main threat that photoelectric detection systems will face in future complex confrontation environments. Therefore, how to effectively protect photoelectric detection systems from strong lasers is an urgent problem to be solved. Summary of the invention

[0005] In view of this, the embodiments of the present application propose a laser protection device and protection method for a photoelectric detection system, which can achieve effective protection of the photoelectric detection system, effectively reduce the laser protection threshold, and increase the strong laser attenuation factor, which can well meet the use requirements of the photoelectric detection system in a strong laser threat environment.

[0006] In the first aspect, an embodiment of the present application proposes a laser protection device for a photoelectric detection system, comprising: a phase change laser protection device and a temperature control device, wherein the phase change laser protection device is arranged near the primary image plane of the photoelectric detection system but not on the primary image plane; the phase change laser protection device is composed of a flat glass substrate, a transition layer, a phase change laser protection layer, an anti-reflection / anti-reflection layer, and a temperature control coil, and the phase change laser protection device is connected to the temperature control device through the temperature control coil; the phase change temperature of the phase change laser protection layer of the phase change laser protection device is slightly higher than the highest temperature that the photoelectric detection system can reach, so that it is always below the phase change temperature when there is no strong laser irradiation, and always maintains a high transmittance state. The temperature rise required for phase change during strong laser irradiation is small, thereby reducing the laser starting protection threshold and ensuring the protection effectiveness against strong lasers; the temperature control device is used to perform temperature control on the phase change laser protection device, and the temperature control point of the phase change laser protection device is kept below the phase change temperature by controlling the current of the temperature control coil; wherein the temperature control point is determined based on the laser starting protection threshold.

[0007] Optionally, the flat glass substrate is made of a medium wave transparent material, and the selected medium wave transparent material is determined based on the manufacturing process requirements of the transition layer and the manufacturing process requirements of the phase change laser protection layer.

[0008] Optionally, the transition layer is used to achieve the transition from the flat glass substrate to the phase change laser protection layer, to solve the lattice mismatch problem between the flat glass substrate and the phase change laser protection layer, to grow a phase change laser protection layer with high laser protection performance, and to solve the affinity problem between the phase change laser protection layer and the flat glass substrate, to improve the firmness of the phase change laser protection layer.

[0009] Optionally, the transition layer and the anti-reflection / anti-reflection layer are both multi-layer film structures. Based on the refractive index values ​​of the phase change laser protection layer before and after the phase change, the flat glass substrate, transition layer, phase change laser protection layer and anti-reflection / anti-reflection layer are jointly designed, and the materials and film thicknesses are selected in accordance with the multi-layer film design method to achieve high transmittance of the phase change laser protection layer in the working band of the photoelectric detection system before the phase change, and high reflectivity of the phase change laser protection layer in the working band of the photoelectric detection system after the phase change.

[0010] Optionally, the phase-change laser shielding layer is made of a phase-change material, and the phase-change material includes vanadium dioxide.

[0011] Optionally, when the temperature is lower than the phase change temperature, the phase change laser protection layer is in a semiconductor state and has high transmittance to the working band of the photoelectric detection system. When the temperature is higher than the phase change temperature, the phase change laser protection layer is in a metallic state and has high reflectivity to the working band of the photoelectric detection system. The phase change temperature of the phase change laser protection layer is slightly higher than the highest temperature that the photoelectric detection system can reach to prevent it from undergoing phase change at high temperatures.

[0012] Optionally, the temperature control coil is used to heat the phase change laser protection device, and the phase change laser protection device is kept at a constant temperature by controlling the heating amount. A temperature sensor is arranged on the temperature control coil to measure the temperature of the phase change laser protection device.

[0013] Optionally, the temperature control device is used to provide a heating current to the temperature control coil, receive a temperature signal from a temperature sensor of the temperature control coil to form feedback control, and automatically adjust the heating current to keep the phase change laser protection device at a constant temperature.

[0014] The embodiment of the present application proposes a laser protection device for a photoelectric detection system, in which a phase change laser protection device is arranged near the primary image plane of the photoelectric detection system, but not on the primary image plane. The laser power density near the primary image plane is high. By reasonably designing the phase change laser protection device and its temperature control temperature, when a strong laser irradiates the photoelectric detection system, the laser power density near the primary image plane can be higher than the laser starting protection threshold, thereby realizing protection against strong lasers. In the optical design of the photoelectric detection system, the phase change laser protection device can be considered as a flat glass to ensure that the imaging performance of the photoelectric detection system is not affected. The phase change laser protection device is composed of a flat glass substrate, a transition layer, a phase change laser protection layer, an anti-reflection / anti-reflection layer, and a temperature control coil. The phase change laser protection device is connected to the temperature control device through the temperature control coil. The phase change temperature of the phase change laser protection layer of the phase change laser protection device is slightly higher than the highest temperature that the photoelectric detection system can reach, which makes it always below the phase change temperature when there is no strong laser irradiation, and always maintains a high transmittance state. The temperature rise required for phase change during strong laser irradiation is small, which effectively reduces the laser starting protection threshold and ensures the protection efficiency against strong lasers. The temperature control device can control the temperature of the phase change laser protection device, so that the temperature control point of the phase change laser protection device is kept below the phase change temperature. The protection device realizes effective protection of the photoelectric detection system, reduces the laser protection threshold, and increases the strong laser attenuation factor, which well meets the use requirements of the photoelectric detection system in a strong laser threat environment.

[0015] In the second aspect, an embodiment of the present application proposes a laser protection method for a photoelectric detection system, which is implemented based on a laser protection device for a photoelectric detection system as described above, and includes the following steps: setting a phase change laser protection device near but not on the primary image plane of the photoelectric detection system, and connecting a temperature control device to the phase change laser protection device through the temperature control coil of the phase change laser protection device; setting the phase change temperature of the phase change laser protection layer of the phase change laser protection device to be slightly higher than the highest achievable temperature of the photoelectric detection system, so that it is always below the phase change temperature when there is no strong laser irradiation, and always maintains a high transmittance state. The temperature rise required for phase change during strong laser irradiation is small, thereby reducing the laser starting protection threshold and ensuring the protection effectiveness against strong lasers; controlling the temperature of the phase change laser protection device by means of a temperature control device, and keeping the temperature control point of the phase change laser protection device below the phase change temperature by controlling the current of the temperature control coil; wherein the temperature control point is determined based on the laser starting protection threshold.

[0016] In a third aspect, an embodiment of the present application proposes a computer-readable storage medium storing a computer program, which, when executed by a processor, can implement a laser protection method for a photoelectric detection system as described in the second aspect above.

[0017] It can be understood that the beneficial effects of the second to third aspects mentioned above can be found in the relevant description of the first aspect mentioned above, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the related technologies, the drawings required for use in the embodiments of the present application or the related technical descriptions will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 is a structural diagram of a laser protection device of a photoelectric detection system provided by an embodiment of the present application;

[0020] Figure 2 is a structural diagram of a phase change laser protection device provided by an embodiment of the present application;

[0021] Figure 3 This is a flow chart of a laser protection method for a photoelectric detection system provided by another embodiment of the present application. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below in conjunction with the accompanying drawings. In the various embodiments of the present application, many technical details are proposed in order to make the reader better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed in the present application can also be implemented. The division of the following embodiments is only for the convenience of description, and the specific implementation mode of the present application should not constitute any limitation. The various embodiments can be combined with each other and referenced to each other under the premise of no contradiction.

[0023] An embodiment of the present application proposes a laser protection device for a photoelectric detection system. The implementation details of the laser protection device for a photoelectric detection system proposed in this embodiment are described in detail below. The following content is only the implementation details provided for the convenience of understanding and is not necessary for the implementation of this solution.

[0024] The specific structure of the laser protection device of the photoelectric detection system proposed in this embodiment is as follows: Figure 1 As shown, it includes a phase change laser protection device 7 and a temperature control device 8. The photoelectric detection system consists of a protective light window 1, a scanning reflector 2, an imaging objective lens group 3, a folding reflector 4, an imaging eyepiece group 5 and an infrared cooling focal plane detector 6. The phase change laser protection device 7 is arranged near the primary image plane of the photoelectric detection system, but not on the primary image plane.

[0025] The photoelectric detection system adopts a commonly used secondary imaging configuration to reduce the lens size and achieve the matching of the optical system F number with the infrared cooled focal plane detection 6, thereby achieving 100% cold aperture efficiency.

[0026] The phase-change laser protection device 7 is placed near the primary image plane of the photoelectric detection system, but not on the primary image plane. Near the primary image plane, the laser power density is relatively high. By reasonably designing the phase-change laser protection device 7 and its temperature control temperature, when a strong laser irradiates the photoelectric detection system, the laser power density near the primary image plane can be higher than the laser starting protection threshold, thereby achieving protection against strong lasers.

[0027] When designing the optical system of the photoelectric detection, the phase-change laser protection device 7 needs to be considered as a flat glass. By taking the phase-change laser protection device 7 into consideration during the optical design, it can be ensured that the imaging performance of the photoelectric detection system is not affected.

[0028] The specific structure of the phase change laser protection device 7 can be as follows: Figure 2 As shown, the phase change laser protection device 7 is composed of a flat glass substrate 71, a transition layer 72, a phase change laser protection layer 73, an anti-reflection / anti-reflection layer 74, and a temperature control coil 75. The phase change laser protection device 7 is connected to the temperature control device 8 via the temperature control coil 75.

[0029] The phase change temperature of the phase change laser protection layer 73 of the phase change laser protection device 7 is slightly higher than the highest temperature that the photoelectric detection system can reach, so that it is always below the phase change temperature when there is no strong laser irradiation, and always maintains a high transmittance state. The temperature rise required for phase change during strong laser irradiation is relatively small, thereby reducing the laser starting protection threshold and ensuring the protection effectiveness against strong lasers.

[0030] The preparation process of the phase change laser protection device 7 is to plate a transition layer 72, a phase change laser protection layer 73 and an anti-reflection / anti-reflection layer 74 on a flat glass substrate 71 at one time to form the basic structure of the phase change laser protection device 7, and then superimpose a temperature control coil 75 on the phase change laser protection device 7, and leave a connection interface on the temperature control coil 75 to connect it to the temperature control device 8 to realize the transmission of temperature control signals and temperature control currents.

[0031] The temperature control device 8 is used to control the temperature of the phase change laser protection device 7, and keeps the temperature control point of the phase change laser protection device 7 below the phase change temperature by controlling the current of the temperature control coil 75. The temperature control point is determined based on the laser start protection threshold.

[0032] In one example, the flat glass substrate 71 is made of a medium wave transparent material, and the selected medium wave transparent material is determined based on the manufacturing process requirements of the transition layer 72 and the phase change laser shielding layer 73, such as quartz glass or silicate glass.

[0033] In one example, the transition layer 72 is used to achieve the transition from the flat glass substrate 71 to the phase change laser shielding layer 73, solve the lattice mismatch problem between the flat glass substrate 71 and the phase change laser shielding layer 73, and is conducive to the growth of the phase change laser shielding layer 73 with high laser protection performance. The transition layer 72 can also solve the affinity problem between the phase change laser shielding layer 73 and the flat glass substrate 71, thereby improving the film firmness of the phase change laser shielding layer 73.

[0034] In one example, the transition layer 72 and the anti-reflection / anti-reflection layer 74 are both multi-layer film structures. When preparing the phase change laser protection device 7, it is necessary to jointly design, select materials and select film thickness for the flat glass substrate 71, the transition layer 72, the phase change laser protection layer 73 and the anti-reflection / anti-reflection layer 74 based on the refractive index value of the phase change laser protection layer 73 before and after the phase change according to the multi-layer film design method. This can achieve high transmittance of the phase change laser protection layer 73 in the working band of the photoelectric detection system before the phase change, and high reflectivity of the phase change laser protection layer 73 in the working band of the photoelectric detection system after the phase change.

[0035] In one example, the phase-change laser shielding layer 73 is made of a phase-change material, and the phase-change material may be vanadium dioxide.

[0036] In one example, when the temperature is lower than the phase change temperature, the phase change laser shielding layer 73 is in a semiconductor state and has high transmittance to the working band of the photoelectric detection system. When the temperature is higher than the phase change temperature, the phase change laser shielding layer 73 is in a metal state and has high reflectivity and high absorption to the working band of the photoelectric detection system. The phase change temperature of the phase change laser shielding layer 73 is slightly higher than the highest temperature that the photoelectric detection system can reach to prevent it from undergoing a phase change at high temperature and blocking the passage of signal light.

[0037] In one example, the temperature control coil 75 is used to heat the phase change laser protection device 7, and the phase change laser protection device 7 is kept at a constant temperature by controlling the heating amount. A temperature sensor is arranged on the temperature control coil 75 to measure the temperature of the phase change laser protection device 7.

[0038] In one example, the temperature control device 8 is used to provide a heating current to the temperature control coil 75, receive a temperature signal from a temperature sensor of the temperature control coil 75 to form feedback control, and automatically adjust the heating current, thereby maintaining a constant temperature of the phase change laser protection device 7.

[0039] In this embodiment, the phase change laser protection device is arranged near the primary image plane of the photoelectric detection system, but not on the primary image plane. The laser power density near the primary image plane is high. By reasonably designing the phase change laser protection device and its temperature control temperature, when the strong laser irradiates the photoelectric detection system, the laser power density near the primary image plane can be higher than the laser starting protection threshold, thereby realizing protection against strong lasers. In the optical design of the photoelectric detection system, the phase change laser protection device can be considered as a flat glass to ensure that the imaging performance of the photoelectric detection system is not affected. The phase change laser protection device is composed of a flat glass substrate, a transition layer, a phase change laser protection layer, an anti-reflection / anti-reflection layer, and a temperature control coil. The phase change laser protection device is connected to the temperature control device through the temperature control coil. The phase change temperature of the phase change laser protection layer of the phase change laser protection device is slightly higher than the highest temperature that the photoelectric detection system can reach, which makes it always below the phase change temperature when there is no strong laser irradiation, and always maintains a high transmittance state. The temperature rise required for phase change during strong laser irradiation is small, which effectively reduces the laser starting protection threshold and ensures the protection efficiency against strong lasers. The temperature control device can control the temperature of the phase change laser protection device, so that the temperature control point of the phase change laser protection device is kept below the phase change temperature. The protection device realizes effective protection of the photoelectric detection system, reduces the laser protection threshold, increases the strong laser attenuation factor, and meets the use requirements of the photoelectric detection system in a strong laser threat environment.

[0040] It is worth mentioning that all modules involved in this embodiment are logic modules. In practical applications, a logic unit can be a physical unit, a part of a physical unit, or a combination of multiple physical units. In addition, in order to highlight the innovative part of this application, this embodiment does not introduce units that are not closely related to solving the technical problems proposed by this application, but this does not mean that there are no other units in this embodiment.

[0041] Another embodiment of the present application proposes a laser protection method for a photoelectric detection system. The implementation details of the laser protection method for a photoelectric detection system proposed in this embodiment are specifically described below. The following content is only for the convenience of understanding the implementation details provided, and is not necessary for implementing this example. Figure 3 : is a flow chart of a laser protection method for a photoelectric detection system proposed in this embodiment, which specifically includes:

[0042] S1, disposing a phase change laser protection device near a primary image plane of a photoelectric detection system but not on the primary image plane, and connecting a temperature control device to the phase change laser protection device through a temperature control coil of the phase change laser protection device.

[0043] In the specific implementation, the laser power density near the primary image plane is high. By reasonably designing the phase change laser protection device and its temperature control temperature, when the strong laser irradiates the photoelectric detection system, the laser power density near the primary image plane can be higher than the laser starting protection threshold, thereby achieving protection against the strong laser.

[0044] S2. The phase change temperature of the phase change laser protection layer of the phase change laser protection device is set to be slightly higher than the highest temperature that the photoelectric detection system can reach, so that it is always below the phase change temperature when there is no strong laser irradiation, and always maintains a high transmittance state. The temperature rise required for phase change during strong laser irradiation is relatively small, thereby reducing the laser starting protection threshold and ensuring the protection effectiveness against strong lasers.

[0045] In the specific implementation, through the exploration of the design and preparation process of the phase change laser protection layer, the phase change temperature of the phase change laser protection layer is slightly higher than the highest temperature that the photoelectric detection system can reach in the use environment. This can ensure that the temperature of the phase change laser protection device is always below the phase change temperature when there is no strong laser irradiation, and always maintain a high transmittance state. At the same time, it can also ensure that the temperature rise required for phase change is small when strong laser irradiation occurs, thereby significantly reducing the laser starting protection threshold and ensuring the protection efficiency against strong lasers.

[0046] S3, temperature control the phase change laser protection device through a temperature control device, and keep the temperature control point of the phase change laser protection device below the phase change temperature by controlling the current of the temperature control coil, wherein the temperature control point is determined based on the laser starting protection threshold.

[0047] In a specific implementation, the temperature control point is determined according to the required laser start protection threshold. The closer the temperature control point is to the phase change temperature, the less heat is required to achieve the phase change, and accordingly, the lower the laser start protection threshold is.

[0048] The step division of the above methods is only for clear description. When implemented, they can be combined into one step or some steps can be split and decomposed into multiple steps. As long as they include the same logical relationship, they are all within the scope of protection of this application; adding insignificant modifications to the algorithm or process or introducing insignificant designs without changing the core design of the algorithm and process are all within the scope of protection of this application.

[0049] It is not difficult to find that this embodiment is a method embodiment corresponding to the above embodiment, and this embodiment can be implemented in conjunction with the above embodiment. The technical details and technical effects mentioned in the above embodiment are still valid in this embodiment, and in order to reduce repetition, they are not repeated here. Accordingly, the technical details mentioned in this embodiment can also be applied in the above embodiment.

[0050] Another embodiment of the present application proposes a computer-readable storage medium, which stores a computer program therein. When the computer program is executed by a processor, it can implement a laser protection method for a photoelectric detection system as described in the above method embodiments.

[0051] That is, those skilled in the art can understand that all or part of the steps in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a program, and the program is stored in a storage medium, including a number of instructions to enable a device (which can be a single-chip microcomputer, chip, etc.) or a processor to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, ROM (Read-Only Memory), RAM (Random Access Memory), disk or optical disk and other media that can store program codes.

[0052] Those skilled in the art will appreciate that the above embodiments are specific embodiments for implementing the present application, and in actual applications, various changes may be made thereto in form and detail without departing from the spirit and scope of the present application.

Claims

1. A laser protection device for a photoelectric detection system, characterized in that: include: A phase-change laser protection device and a temperature control device, wherein the phase-change laser protection device is arranged near the primary image plane of the photoelectric detection system but not on the primary image plane; The phase-change laser protection device is composed of a flat glass substrate, a transition layer, a phase-change laser protection layer, an anti-reflection / anti-reflection layer, and a temperature control coil. The phase-change laser protection device is connected to the temperature control device through the temperature control coil. The phase change temperature of the phase change laser protection layer of the phase change laser protection device is slightly higher than the highest temperature that the photoelectric detection system can reach, so that it is always below the phase change temperature when there is no strong laser irradiation, and always maintains a high transmittance state. The temperature rise required for phase change during strong laser irradiation is small, which reduces the laser starting protection threshold and ensures the protection efficiency against strong lasers; The temperature control device is used to control the temperature of the phase change laser protection device, and the temperature control point of the phase change laser protection device is kept below the phase change temperature by controlling the current of the temperature control coil; wherein the temperature control point is determined based on the laser starting protection threshold.

2. The laser protection device of a photoelectric detection system according to claim 1, characterized in that: The flat glass substrate is made of a medium wave transparent material, and the selected medium wave transparent material is determined based on the manufacturing process requirements of the transition layer and the manufacturing process requirements of the phase change laser protection layer.

3. The laser protection device of a photoelectric detection system according to claim 2, characterized in that: The transition layer is used to achieve the transition from the flat glass substrate to the phase change laser protection layer, to solve the lattice mismatch problem between the flat glass substrate and the phase change laser protection layer, to grow a phase change laser protection layer with high laser protection performance, and to solve the affinity problem between the phase change laser protection layer and the flat glass substrate, so as to improve the firmness of the phase change laser protection layer.

4. The laser protection device of a photoelectric detection system according to claim 3, characterized in that: The transition layer and the anti-reflection / anti-reflection layer are both multi-layer film structures. Based on the refractive index value of the phase-change laser protection layer before and after the phase change, the flat glass substrate, transition layer, phase-change laser protection layer and anti-reflection / anti-reflection layer are jointly designed, and the materials and film thickness are selected in accordance with the multi-layer film design method to achieve high transmittance of the phase-change laser protection layer in the working band of the photoelectric detection system before the phase change, and high reflectivity of the phase-change laser protection layer in the working band of the photoelectric detection system after the phase change.

5. The laser protection device of a photoelectric detection system according to claim 1, characterized in that: The phase-change laser shielding layer is made of a phase-change material, and the phase-change material includes vanadium dioxide.

6. The laser protection device of a photoelectric detection system according to claim 5, characterized in that: When the temperature is lower than the phase change temperature, the phase change laser protection layer is in a semiconductor state and has high transmittance to the working band of the photoelectric detection system. When the temperature is higher than the phase change temperature, the phase change laser protection layer is in a metallic state and has high reflectivity to the working band of the photoelectric detection system. The phase change temperature of the phase change laser protection layer is slightly higher than the highest temperature that the photoelectric detection system can reach to prevent it from undergoing phase change at high temperatures.

7. The laser protection device of a photoelectric detection system according to claim 1, characterized in that: The temperature control coil is used to heat the phase change laser protection device, and the phase change laser protection device is kept at a constant temperature by controlling the heating amount. A temperature sensor is arranged on the temperature control coil to measure the temperature of the phase change laser protection device.

8. The laser protection device of a photoelectric detection system according to claim 7, characterized in that: The temperature control device is used to provide heating current to the temperature control coil, receive the temperature signal of the temperature sensor of the temperature control coil to form feedback control, and automatically adjust the heating current to keep the phase change laser protection device at a constant temperature.

9. A laser protection method for a photoelectric detection system, characterized in that: The laser protection device of a photoelectric detection system according to any one of claims 1 to 8 is implemented, and the method comprises: The phase-change laser protection device is arranged near the primary image plane of the photoelectric detection system but not on the primary image plane, and the temperature control device is connected to the phase-change laser protection device through the temperature control coil of the phase-change laser protection device; The phase change temperature of the phase change laser protection layer of the phase change laser protection device is set to be slightly higher than the highest temperature that the photoelectric detection system can reach, so that it is always below the phase change temperature when there is no strong laser irradiation, and always maintains a high transmittance state. The temperature rise required for phase change during strong laser irradiation is small, which reduces the laser starting protection threshold and ensures the protection efficiency against strong lasers; The temperature of the phase change laser protection device is controlled by a temperature control device, and the temperature control point of the phase change laser protection device is kept below the phase change temperature by controlling the current of the temperature control coil; wherein the temperature control point is determined based on the laser starting protection threshold.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the laser protection method for a photoelectric detection system according to claim 9 is implemented.

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