Method, device and computer equipment for testing band gap of semiconductor heterostructure

Abstract

The application relates to a band gap testing method and device of a semiconductor heterostructure, computer equipment, a storage medium and a computer program product. The method comprises the following steps: scanning a first semiconductor material sample by using a visible spectrophotometer with a preset wavelength range to obtain a corresponding diffuse reflection spectrum of the first semiconductor material sample; scanning the semiconductor heterostructure by using the visible spectrophotometer with the preset wavelength range to obtain a corresponding diffuse reflection spectrum of the semiconductor heterostructure; determining band gap information of the first semiconductor material sample according to the corresponding diffuse reflection spectrum of the first semiconductor material sample, and determining band gap information of the semiconductor heterostructure according to the corresponding diffuse reflection spectrum of the semiconductor heterostructure; and obtaining a band gap testing result of the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure. The method can improve the band gap testing accuracy of a two-dimensional material heterojunction.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a band gap testing method and device of semiconductor heterostructure, computer equipment, storage medium and computer program product. BACKGROUND

[0002] Two-dimensional material heterojunction is a structure formed by stacking two or more different two-dimensional materials through weak van der Waals force, and these two-dimensional materials can be common layered compounds, compounds or semiconductor alloys. Due to its unique physical and chemical properties, two-dimensional material heterojunction has great application potential in the fields of optoelectronic devices, high-sensitivity infrared detectors, energy conversion and storage, sensors, etc. Common methods for testing two-dimensional material heterojunction include photoluminescence spectrum (PL), scanning tunneling microscope (STM), and ultraviolet photoelectron spectroscopy (UPS). However, since two-dimensional materials are unstable in air, the test results obtained when actually testing two-dimensional material heterojunctions may not be accurate enough.

[0003] Therefore, the conventional technology has the problem of not being accurate enough in testing the band gap of two-dimensional material heterojunction. SUMMARY

[0004] Therefore, it is necessary to provide a band gap testing method and device of semiconductor heterostructure, computer equipment, computer readable storage medium and computer program product, which can improve the accuracy of testing the band gap of two-dimensional material heterojunction.

[0005] A band gap testing method of semiconductor heterostructure, the method comprising:

[0006] scanning the first semiconductor material sample with a visible spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample comprises, in sequence, a transparent double-sided tape, a first semiconductor material, and an aluminum oxide backplate;

[0007] scanning the semiconductor heterostructure with a visible spectrophotometer in a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure comprises, in sequence, a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape, and an aluminum oxide backplate; the second semiconductor material is different from the first semiconductor material;

[0008] determining the band gap information of the first semiconductor material sample according to the diffuse reflection spectrum corresponding to the first semiconductor material sample, and determining the band gap information of the semiconductor heterostructure according to the diffuse reflection spectrum corresponding to the semiconductor heterostructure;

[0009] According to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure, a band gap test result of the semiconductor heterostructure is obtained.

[0010] In one of the embodiments, the first semiconductor material is indium selenide; the second semiconductor material is germanium arsenide; and the semiconductor heterostructure is a semiconductor structure formed based on indium selenide and germanium arsenide.

[0011] In one of the embodiments, the method further comprises: taking an aluminum oxide backboard as a substrate, and performing baseline scanning on the aluminum oxide backboard by using a reflection mode of a visible spectrophotometer with a preset wavelength range.

[0012] In one of the embodiments, the light transmittance of the transparent double-sided tape meets a preset light transmittance requirement; and the transparent double-sided tape contains one or more of polymethyl acrylate, polyurethane glue, silicone rubber, chloroprene rubber, and polyvinyl acetate glue.

[0013] In one of the embodiments, the preparation method of the first semiconductor material sample comprises:

[0014] The first semiconductor material is adhered by using a Scotch tape to form a first structure; the first structure comprises the first semiconductor material and the Scotch tape in sequence;

[0015] The first structure is attached to a side of the transparent double-sided tape without a diaphragm, and the first structure and the transparent double-sided tape are compacted by applying an external force, and then the Scotch tape is removed to form a second structure; the second structure comprises the diaphragm of the transparent double-sided tape, the transparent double-sided tape, and the first semiconductor material in sequence;

[0016] The second structure is attached to the aluminum oxide backboard, and the diaphragm of the second structure is removed to form the first semiconductor material sample.

[0017] In one of the embodiments, the preparation method of the semiconductor heterostructure comprises:

[0018] The transparent double-sided tape with the first semiconductor material attached thereto in the first semiconductor material sample is removed from the aluminum oxide backboard;

[0019] The transparent double-sided tape with the diaphragm is placed on the aluminum oxide backboard, and the diaphragm is removed to form a fourth structure; the fourth structure comprises the transparent double-sided tape and the aluminum oxide backboard in sequence;

[0020] The second semiconductor material is adhered by using a Scotch tape to form a fifth structure; the fifth structure comprises the second semiconductor material and the Scotch tape in sequence;

[0021] Place the fifth structure on the transparent double-sided tape of the fourth structure, and press the fifth structure and the fourth structure by applying an external force, and then remove the Scotch tape to form a sixth structure; the sixth structure comprises the second semiconductor material, the transparent double-sided tape and the aluminum oxide back plate in sequence;

[0022] Place the transparent double-sided tape with the first semiconductor material on the sixth structure to form a semiconductor heterostructure.

[0023] A band gap testing device of a semiconductor heterostructure, the device comprising:

[0024] A first measuring module is configured to scan a first semiconductor material sample by using a visible spectrophotometer with a preset wavelength range, and obtain a corresponding diffuse reflection spectrum of the first semiconductor material sample; the first semiconductor material sample comprises the transparent double-sided tape, the first semiconductor material and the aluminum oxide back plate in sequence;

[0025] A second measuring module is configured to scan the semiconductor heterostructure by using the visible spectrophotometer with the preset wavelength range, and obtain a corresponding diffuse reflection spectrum of the semiconductor heterostructure; the semiconductor heterostructure comprises the transparent double-sided tape, the first semiconductor material, the second semiconductor material, the transparent double-sided tape and the aluminum oxide back plate in sequence; the second semiconductor material is different from the first semiconductor material;

[0026] A determining module is configured to determine band gap information of the first semiconductor material sample according to the corresponding diffuse reflection spectrum of the first semiconductor material sample, and determine band gap information of the semiconductor heterostructure according to the corresponding diffuse reflection spectrum of the semiconductor heterostructure;

[0027] An obtaining module is configured to obtain a band gap testing result of the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

[0028] A computer device comprises a memory and a processor, the memory stores a computer program, and the processor implements the steps of the above method when executing the computer program.

[0029] A computer readable storage medium stores a computer program, and the computer program is executed by a processor to implement the steps of the above method.

[0030] A computer program product comprises a computer program, and the computer program is executed by a processor to implement the steps of the above method.

[0031] The aforementioned method, apparatus, computer equipment, storage medium, and computer program product for testing the bandgap of semiconductor heterostructures scan a first semiconductor material sample using a visible light spectrophotometer with a preset wavelength range to obtain the diffuse reflectance spectrum corresponding to the first semiconductor material sample. The first semiconductor material sample sequentially comprises a transparent double-sided adhesive tape, a first semiconductor material, and an alumina backplate. The semiconductor heterostructure is scanned using a visible light spectrophotometer with a preset wavelength range to obtain the diffuse reflectance spectrum corresponding to the semiconductor heterostructure. The semiconductor heterostructure sequentially comprises a transparent double-sided adhesive tape, a first semiconductor material, a second semiconductor material, a transparent double-sided adhesive tape, and an alumina backplate. The second semiconductor material is a different semiconductor material from the first semiconductor material. Based on the first semiconductor... The bandgap information of the first semiconductor material sample is determined by the diffuse reflectance spectrum corresponding to the bulk material sample, and the bandgap information of the semiconductor heterostructure is determined by the diffuse reflectance spectrum corresponding to the semiconductor heterostructure. Based on the bandgap information of the first semiconductor material sample and the semiconductor heterostructure, the bandgap test results for the semiconductor heterostructure are obtained. In this way, the diffuse reflectance spectra of the first semiconductor material sample and the semiconductor heterostructure can be accurately obtained, and based on these spectra, it can be accurately determined whether the bandgap of the first semiconductor material changes after forming a semiconductor heterostructure with the second semiconductor material, thus improving the accuracy of bandgap testing for two-dimensional material heterojunctions. Attached Figure Description

[0032] Figure 1 This is an application environment diagram of a bandgap testing method for a semiconductor heterostructure in one embodiment;

[0033] Figure 2 This is a flowchart illustrating a method for testing the bandgap of a semiconductor heterostructure in one embodiment.

[0034] Figure 3 This is a schematic diagram of a semiconductor heterostructure and a first semiconductor material sample in one embodiment;

[0035] Figure 4 This is a schematic diagram of a test structure for an adhesive tape in one embodiment;

[0036] Figure 5 This is a schematic diagram illustrating the preparation process of an indium selenide sample in one embodiment;

[0037] Figure 6 This is a schematic diagram of the fabrication process of a semiconductor heterostructure in one embodiment;

[0038] Figure 7 This is a schematic diagram of an indium selenide sample prepared using 0.05 mm transparent double-sided tape in one embodiment;

[0039] Figure 8 a schematic diagram of a first semiconductor material sample and a seventh structure in one embodiment;

[0040] Figure 9 a schematic diagram of an indium selenide sample prepared using 0.1 mm transparent double-sided tape in one embodiment;

[0041] Figure 10 a schematic diagram of a first semiconductor material sample and a seventh structure in one embodiment;

[0042] Figure 11 a schematic diagram of an indium selenide sample prepared using 0.2 mm transparent double-sided tape in one embodiment;

[0043] Figure 12 a schematic diagram of a third semiconductor material sample and a seventh structure in one embodiment;

[0044] Figure 13 a block diagram of a bandgap testing apparatus for a semiconductor heterostructure in one embodiment;

[0045] Figure 14 an internal structure diagram of a computer device in one embodiment.

[0046] Wherein, each reference sign and its meaning are as follows:

[0047] 102, computer device; 301, first semiconductor material sample; 302, semiconductor heterostructure; 501, first structure; 502, second structure; 601, fourth structure; 602, fifth structure; 603, sixth structure; 701, seventh structure; 1101, third semiconductor material sample. DETAILED DESCRIPTION

[0048] In order to make the purpose, technical scheme and advantages of the present application more clear, the present application is further described in detail below in combination with the drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application, and are not used to limit the present application.

[0049] It should be noted that the terms "first", "second", and the like in the description and claims of the present disclosure and the foregoing drawings are used to distinguish between similar objects, and are not necessarily used to describe a particular sequential or chronological order. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present disclosure described herein can be implemented in an order other than that illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Rather, they are merely examples of devices and methods consistent with some aspects of the present disclosure.

[0050] The band gap testing method of the semiconductor heterostructure provided by the embodiments of the present application can be applied to the computer device as shown in Figure 1 .

[0051] In an exemplary embodiment, as shown in Figure 2 , a band gap testing method of a semiconductor heterostructure is provided, which is applied to the computer device 102 as an example in Figure 1 , including the following steps:

[0052] Step S202, using a visible spectrophotometer with a preset wavelength range to scan the first semiconductor material sample to obtain the corresponding diffuse reflection spectrum of the first semiconductor material sample; the first semiconductor material sample includes transparent double-sided tape, first semiconductor material and aluminum oxide back plate in turn.

[0053] Among them, the visible spectrophotometer with a preset wavelength range can be an ultraviolet-visible-near infrared spectrophotometer or an ultraviolet-visible spectrophotometer.

[0054] Among them, the transparent double-sided tape does not affect the band gap testing of the first semiconductor material and the second semiconductor material, and the thickness of the transparent double-sided tape can be 0.05 mm, 0.1 mm or 0.2 mm.

[0055] Among them, the first semiconductor material can be a two-dimensional material, a quantum dot material or other types of semiconductor material.

[0056] Among them, the aluminum oxide back plate is used as a base plate.

[0057] Optionally, the first semiconductor material sample is scanned by using a visible spectrophotometer with a preset wavelength range, so that the computer device obtains the corresponding diffuse reflection spectrum of the first semiconductor material sample.

[0058] S204, a visible light spectrophotometer with a preset wavelength range is used to scan the semiconductor heterostructure to obtain a diffuse reflection spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure sequentially includes a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape, and an aluminum oxide back plate; the second semiconductor material is different from the first semiconductor material.

[0059] The first semiconductor material and the second semiconductor material can be two-dimensional materials, quantum dot materials, or other types of semiconductor materials, but in the embodiments of the present application, the first semiconductor material and the second semiconductor material are different semiconductor materials.

[0060] The first semiconductor material sample can refer to 301 in the specification, and the semiconductor heterostructure can refer to 302 in the specification. Figure 3 Figure 3 The first semiconductor material sample can refer to 301 in the specification, and the semiconductor heterostructure can refer to 302 in the specification.

[0061] Optionally, the visible light spectrophotometer with a preset wavelength range is used to scan the semiconductor heterostructure, so that the computer device obtains the diffuse reflection spectrum corresponding to the semiconductor heterostructure.

[0062] S206, according to the diffuse reflection spectrum corresponding to the first semiconductor material sample, the band gap information of the first semiconductor material sample is determined, and according to the diffuse reflection spectrum corresponding to the semiconductor heterostructure, the band gap information of the semiconductor heterostructure is determined.

[0063] The band gap information of the first semiconductor material sample can refer to the energy difference between the conduction band and the valence band in the energy band structure of the first semiconductor material sample.

[0064] The band gap information of the semiconductor heterostructure can refer to the energy difference between the conduction band and the valence band in the energy band structure of the semiconductor heterostructure.

[0065] In a specific implementation, the computer device determines the band gap of the first semiconductor material sample according to the diffuse reflection spectrum corresponding to the first semiconductor material sample, and determines the band gap of the semiconductor heterostructure according to the diffuse reflection spectrum corresponding to the semiconductor heterostructure.

[0066] S208, according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure, a band gap test result for the semiconductor heterostructure is obtained.

[0067] The band gap test result can be used to represent whether the band gap of the first semiconductor material is changed after the first semiconductor material and the second semiconductor material form a heterostructure.

[0068] ​In the specific implementation, the computer device obtains the band gap test result of the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

[0069] In the band gap test method of the semiconductor heterostructure, the first semiconductor material sample is scanned by using the visible spectrophotometer with the preset wavelength range to obtain the corresponding diffuse reflection spectrum of the first semiconductor material sample; the first semiconductor material sample sequentially includes the transparent double-sided adhesive tape, the first semiconductor material, and the aluminum oxide back plate; the semiconductor heterostructure is scanned by using the visible spectrophotometer with the preset wavelength range to obtain the corresponding diffuse reflection spectrum of the semiconductor heterostructure; the semiconductor heterostructure sequentially includes the transparent double-sided adhesive tape, the first semiconductor material, the second semiconductor material, the transparent double-sided adhesive tape, and the aluminum oxide back plate; the second semiconductor material is different from the first semiconductor material; the band gap information of the first semiconductor material sample is determined according to the corresponding diffuse reflection spectrum of the first semiconductor material sample, and the band gap information of the semiconductor heterostructure is determined according to the corresponding diffuse reflection spectrum of the semiconductor heterostructure; and the band gap test result of the semiconductor heterostructure is obtained according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure; in this way, the diffuse reflection spectrum of the first semiconductor material sample and the diffuse reflection spectrum of the semiconductor heterostructure can be accurately obtained, and it can be determined whether the band gap of the first semiconductor material changes after the first semiconductor material forms the semiconductor heterostructure with the second semiconductor material based on the diffuse reflection spectrum of the first semiconductor material sample and the diffuse reflection spectrum of the semiconductor heterostructure, thereby improving the band gap test accuracy of the two-dimensional material heterojunction.

[0070] The novel structure provided in the application can calculate the band gap of the two-dimensional material heterojunction by testing the ultraviolet-visible-near infrared diffuse reflection spectrum, which is helpful for material performance evaluation, material design and optimization, new material discovery and application exploration.

[0071] In an exemplary embodiment, the first semiconductor material is indium selenide, the second semiconductor material is germanium arsenide, and the semiconductor heterostructure is a semiconductor structure formed based on indium selenide and germanium arsenide.

[0072] The indium selenide InSe and the germanium arsenide GeAs both belong to two-dimensional layered semiconductor materials, and therefore, the semiconductor heterostructure in the embodiment is a heterojunction formed based on two two-dimensional layered semiconductor materials, and the heterojunction can refer to the semiconductor heterostructure 302 shown in FIG. 3. Figure 3

[0073] In the embodiment, by testing the band gap of the indium selenide and the band gap of the semiconductor heterostructure formed based on the indium selenide and the germanium arsenide, it can be determined that the band gap of the indium selenide changes after the semiconductor heterojunction is formed. ​

[0074] In one exemplary embodiment, the method further includes: using an alumina backplate as a substrate, and performing a baseline scan on the alumina backplate using the reflection mode of a visible light spectrophotometer within a preset wavelength range.

[0075] The alumina backing plate is a single piece and does not require extrusion.

[0076] In diffuse reflectance spectroscopy testing, a pure white backplate that does not absorb light and can reflect light completely is ideal. A white backplate minimizes light absorption, allowing more reflected light to originate from the sample, thus more accurately reflecting the sample's diffuse reflectance characteristics. Because BaSO4 has strong light reflection, powdered BaSO4 is often extruded to create backplates. However, compared to alumina backplates, alumina backplates are a single piece, eliminating the need for extrusion and making them more convenient. However, alumina backplates do not reflect light as strongly as BaSO4 backplates. Therefore, before testing, the alumina backplate needs to be scanned as a baseline. By scanning the substrate as a baseline, the light absorption and reflection characteristics of the alumina backplate itself can be obtained. Then, when testing the sample, the sample is placed on the alumina backplate, and the result is subtracted from the baseline value (the instrument saves the baseline scan and automatically subtracts it after each test). This corrects for errors caused by alumina backplate absorption to some extent, resulting in a result closer to the sample's true diffuse reflectance spectrum.

[0077] In one exemplary embodiment, the light transmittance of the transparent double-sided tape meets the preset light transmittance requirements; the transparent double-sided tape contains one or more of polymethyl methacrylate, polyurethane adhesive, silicone rubber, neoprene rubber, and polyvinyl acetate adhesive.

[0078] In the semiconductor heterostructures of various embodiments of this application, the two layers of transparent double-sided tape can be transparent double-sided tapes with different properties.

[0079] Figure 3 The adhesive tape A in the semiconductor heterostructure 302 shown contains one or more common adhesive components such as polymethyl methacrylate, polyurethane adhesive, silicone rubber, neoprene rubber, and polyvinyl acetate adhesive, while requiring high light transmittance. When the semiconductor band gap is Eg (eV), the transmittance of tape A to a wavelength of 1240 / Eg (nm) should preferably be greater than 80%. After multiple experiments, it was found that commercially available tapes are suitable for band gap testing of most semiconductor materials. The test results can be found in [reference needed]. Figure 4 .

[0080] Figure 3 The tape B in the semiconductor heterostructure 302 shown contains one or more of common adhesive components such as polymethyl methacrylate, polyurethane adhesive, silicone rubber, neoprene rubber, and polyvinyl acetate adhesive. Preferably, the color is white or highly transparent.

[0081] In this embodiment, the semiconductor material is covered by the transparent double-sided tape, which isolates the air and improves the stability of the semiconductor material, which is helpful for the research of unstable materials in the air, such as two-dimensional materials and quantum dot materials.

[0082] In an exemplary embodiment, the preparation method of the first semiconductor material sample comprises: adhering the first semiconductor material by using Scotch tape to form a first structure; the first structure comprises the first semiconductor material and the Scotch tape in sequence; attaching the first structure to one side of the transparent double-sided tape without a separator, and removing the Scotch tape after compacting the first structure and the transparent double-sided tape by applying an external force to form a second structure; the second structure comprises the separator of the transparent double-sided tape, the transparent double-sided tape and the first semiconductor material in sequence; attaching the second structure to an aluminum oxide back plate, and removing the separator of the second structure to form the first semiconductor material sample.

[0083] The following takes indium selenide InSe as the first semiconductor material as an example, and the preparation process of the first semiconductor material sample is described in detail in this embodiment:

[0084] Step 1: adhere an appropriate amount of InSe bulk to a piece of Scotch tape, fold repeatedly to obtain a first structure 501 as shown in Figure 5 , which comprises InSe and Scotch tape in sequence;

[0085] Step 2: attach the first structure 501 to one side of the transparent double-sided tape without a separator, and tear off the Scotch tape after compacting by applying an external force to obtain a second structure 502 as shown in Figure 5 , which comprises the separator, the transparent double-sided tape and InSe in sequence;

[0086] Step 3: attach the second structure 502 to an aluminum oxide back plate, and tear off the separator to obtain a first semiconductor material sample 301 as shown in Figure 5 , which comprises the transparent double-sided tape, InSe and the aluminum oxide back plate in sequence.

[0087] The preparation method of the semiconductor material sample in this embodiment can prepare a semiconductor material sample that meets the standard, so as to facilitate accurate testing of the band gap of the semiconductor material sample.

[0088] In an exemplary embodiment, a method for preparing a semiconductor heterostructure includes: removing a transparent double-sided adhesive tape containing the first semiconductor material from an alumina backplate in a first semiconductor material sample; placing a transparent double-sided adhesive tape with a diaphragm on the alumina backplate and removing the diaphragm to form a fourth structure; the fourth structure sequentially includes the transparent double-sided adhesive tape and the alumina backplate; adhering a second semiconductor material to Scotch tape to form a fifth structure; the fifth structure sequentially includes the second semiconductor material and the Scotch tape; placing the fifth structure on the transparent double-sided adhesive tape of the fourth structure, and pressing the fifth structure and the fourth structure together by applying external force before removing the Scotch tape to form a sixth structure; the sixth structure sequentially includes the second semiconductor material, the transparent double-sided adhesive tape, and the alumina backplate; and placing a transparent double-sided adhesive tape containing the first semiconductor material on the sixth structure to form a semiconductor heterostructure.

[0089] The following section uses indium selenide (InSe) as the first semiconductor material and germanium arsenide (GeAs) as the second semiconductor material to illustrate the fabrication process of semiconductor heterostructures in detail:

[0090] Step 1: [The following text appears to be a separate, unrelated section:] ... Figure 6 The transparent double-sided tape with InSe adhering to it in the first semiconductor material sample 301 shown (which includes transparent double-sided tape, InSe and an alumina backplate in sequence) is peeled off from the alumina backplate;

[0091] Step 2: Attach a piece of transparent double-sided tape with a diaphragm to the alumina backing, then peel off the diaphragm to form a... Figure 6 The fourth structure 601 shown includes, in sequence, a transparent double-sided adhesive tape and an aluminum oxide backing plate;

[0092] Step 3: Use a piece of Scotch tape to adhere an appropriate amount of GeAs block, forming a shape like... Figure 6 The fifth structure 602 shown includes, in sequence, a GeAs block and Scotch tape;

[0093] Step 4: [The following text appears to be a separate, unrelated section:] ... Figure 6 The fifth structure 602 shown is placed as follows Figure 6 The fourth structure 601 is shown on a transparent double-sided adhesive tape. After applying external force to press the fifth structure 602 and the fourth structure 601 together, the Scotch tape is removed, forming a structure as shown. Figure 6 The sixth structure 603 shown includes GeAs, transparent double-sided tape, and an aluminum oxide backing plate in sequence;

[0094] Step 6: Attach the InSe side of the transparent double-sided tape (with InSe adhering to it) that was peeled off the alumina backing plate in Step 1 to the sixth structure 603, forming a shape as shown. Figure 6The semiconductor heterostructure 302 shown includes, in sequence, a transparent double-sided tape, InSe, GeAs, another transparent double-sided tape, and an aluminum oxide backplate.

[0095] The semiconductor heterostructure fabrication method of this embodiment can produce a standard-compliant semiconductor heterostructure, which is beneficial for accurately testing the band gap of the semiconductor heterostructure.

[0096] It should be noted that before implementing the technical solutions of each embodiment of this application, multiple tests are required to verify the feasibility of the technical solutions and the reliability of the bandgap test structure obtained by implementing the technical solutions of this application. The following provides test schemes for three embodiments to verify whether covering the semiconductor material surface with 0.05 mm transparent double-sided tape affects the bandgap test of the semiconductor material sheet, whether covering the semiconductor material surface with 0.1 mm transparent double-sided tape affects the bandgap test of the semiconductor material sheet, and whether covering the semiconductor material surface with 0.2 mm transparent double-sided tape affects the bandgap test of the semiconductor material sheet.

[0097] The first embodiment is used to verify whether covering the surface of a semiconductor material with 0.05 mm transparent double-sided tape 1 affects the testing of the band gap of the semiconductor material sheet. Taking InSe semiconductor material as an example, the specific steps include:

[0098] Step 1: Using an alumina backing plate as a substrate, perform baseline scanning (reflectance mode) using a UV-Vis-NIR spectrophotometer.

[0099] Step 2: Use a piece of Scotch tape to adhere an appropriate amount of InSe block, fold it repeatedly to form a shape like... Figure 7 The first structure 501 shown;

[0100] Step 3: [The following text appears to be a separate, unrelated section:] ...as Figure 7 The first structure 501 shown is attached to a transparent double-sided tape 1 with a thickness of 0.05 mm and a diaphragm on the other side. After being pressed firmly with external force, the Scotch tape is peeled off, resulting in the following... Figure 7 The second structure 502 shown;

[0101] Step 4: [The following text appears to be a separate, unrelated section:] ... Figure 7 The second structure 502 shown is attached to the alumina backing plate in step 1. After removing the diaphragm, the following is obtained: Figure 7 The first semiconductor material sample 301 shown is tested for diffuse reflectance curve;

[0102] Step 4: [The following text appears to be a separate, unrelated section:] ... Figure 7 The transparent double-sided adhesive tape 1 with InSe adhering to it in the first semiconductor material sample 301 shown is peeled off from the alumina backing, flipped over, and stuck to the alumina backing to form a shape as shown.Figure 7 The seventh structure 701 is shown, and the diffuse reflection curve of the seventh structure 701 is tested;

[0103] Step 5: Compare the diffuse reflection curves measured in the first semiconductor material sample 301 and the seventh structure 701, as shown in Figure 7 Figure 8 As shown, the band gap of InSe is calculated using the Tauc formula and compared, and the following conclusions are obtained:

[0104] Conclusion one: The diffuse reflection spectrum of the transparent double-sided tape 1 is basically greater than 95% in the range of 400-1400 nm, indicating that its absorption is very weak, and thus it can be guessed that its influence on the absorption of semiconductors in this wavelength range is very small;

[0105] Conclusion two: Comparing the diffuse reflection curves measured in the first semiconductor material sample 301 and the seventh structure 701, it can be seen that the difference is very small, the wavelength position of the absorption edge is consistent, and the calculated band gap is basically the same (InSe@ tape 1: 2.348 eV; tape 1@InSe: 2.352 eV), which is consistent with the literature, which indicates that covering the InSe nanosheet surface with transparent tape 1 does not affect the testing of the band gap of InSe sheet. Figure 7

[0106] The second embodiment is used to verify whether covering the surface of a semiconductor material with a 0.1 mm transparent double-sided tape 2 will affect the testing of the band gap of the semiconductor material sheet. Taking semiconductor material InSe as an example, the steps specifically include:

[0107] Step 1: Use an aluminum oxide back plate as a substrate, and perform baseline scanning (reflection mode) using a UV-visible-near infrared spectrophotometer;

[0108] Step 2: Use a piece of Scotch tape to adhere an appropriate amount of InSe block, repeatedly fold it, and form a first structure 501 as shown in Figure 9

[0109] Step 3: Attach the first structure 501 as shown in Figure 9 to a piece of transparent double-sided tape 2 with a thickness of 0.1 mm and a diaphragm on the other side, and after external compaction, tear off the Scotch tape to obtain a second structure 502 as shown in Figure 9

[0110] Step 3: Attach the second structure 502 as shown in Figure 9 to the aluminum oxide back plate of step 1, tear off the diaphragm, and obtain a first semiconductor material sample 301 as shown in Figure 9 , and test the diffuse reflection curve of the first semiconductor material sample 301;

[0111] ​​​​Step 4: Peel the transparent double-sided adhesive tape 2 with InSe adhered to the first semiconductor material sample 301 from the alumina backing, flip it over, and stick it onto the alumina backing to form a shape as shown in the image. Figure 9 The seventh structure 701 shown is tested for diffuse reflection curves;

[0112] Step 5: Compare the diffuse reflection curves measured for the first semiconductor material sample 301 and the seventh structure 701, such as... Figure 10 As shown, by comparing the diffuse reflectance spectra measured above, calculating the band gap of InSe using the Tauc formula, and making comparisons, the following conclusions are drawn:

[0113] Conclusion 3: The diffuse reflectance spectrum of transparent double-sided tape 2 is generally greater than 95% in the range of 410 ~ 1400 nm, indicating that its absorption is very weak. Therefore, it can be inferred that its influence on the absorption of semiconductors in this wavelength range is very small.

[0114] Conclusion 4: Comparison Figure 9 The diffuse reflectance spectra of the first semiconductor material sample 301 and the seventh structure 701 show very little difference, with the absorption edges basically overlapping, and the calculated band gaps are basically the same (InSe@tape 1: 2.305 eV; tape 1@InSe: 2.337 eV), consistent with the literature. This indicates that covering the InSe nanosheet surface with transparent tape 2 has basically no impact on the measurement of the band gap of the InSe sheet.

[0115] The third embodiment is used to verify whether covering the surface of a semiconductor material with 0.2 mm of transparent double-sided tape affects the testing of the band gap of the semiconductor material sheet. Taking the semiconductor material Sb2Se3 as an example, the specific steps include:

[0116] Step 1: Using an alumina backing plate as a substrate, perform baseline scanning (reflectance mode) using a UV-Vis-NIR spectrophotometer.

[0117] Step 2. Using a piece of transparent double-sided tape 3 with a thickness of 0.2 mm and a diaphragm on the other side, adhere Sb2Se3 powder to form a... Figure 11 The second structure 502 shown;

[0118] Step 3: [The following text appears to be a separate, unrelated section:] ...as Figure 11 The second structure 502 shown is attached to the alumina backing plate. The diaphragm of the transparent double-sided tape 3 is peeled off, forming a structure as shown. Figure 11 The diffuse reflectance curve of the third semiconductor material sample 1101 shown is tested.

[0119] Step 4: [The following text appears to be a separate, unrelated section:] ... Figure 11The transparent double-sided tape 3 with Sb2Se3 powder adhered in the third semiconductor material sample 1101 was torn off from the alumina backing, turned over and pasted on the backing to form a seventh structure 701, and the diffuse reflectance curve of the seventh structure 701 was tested;

[0120] Step 5: Comparison Figure 11 The diffuse reflectance spectra of the third semiconductor material sample and the seventh structure in the above-mentioned steps are shown in FIG. 6. Figure 12 As shown in FIG. 6, the band gap of the Sb2Se3 powder was calculated using the Tauc formula and compared, and the following conclusions were obtained:

[0121] Conclusion five: The diffuse reflectance spectrum of the transparent double-sided tape 3 is basically greater than 95% in the range of 411-1400 nm, indicating that the absorption is very weak, and it can be guessed that the influence of the transparent double-sided tape 3 on the absorption of the semiconductor in this wavelength range is very small.

[0122] Conclusion six: Comparing the diffuse reflectance spectra of the third semiconductor material sample 1101 and the seventh structure 701, it can be seen that the difference is very small, the absorption edge is basically coincident, and the calculated band gap is basically the same (Sb2Se3@tape 1: 1.079 eV; tape 1@Sb2Se3: 1.088 eV), which is consistent with the literature, indicating that the transparent tape 3 covering the surface of Sb2Se3 does not affect the test of the band gap of the Sb2Se3 powder.

[0123] It should be understood that, although each step in the flowchart involved in each of the above-described embodiments is shown in sequence according to the direction of the arrow, these steps are not necessarily executed in sequence according to the direction of the arrow. Unless otherwise explicitly stated herein, the execution of these steps is not strictly limited in sequence, and these steps can be executed in other sequences. Moreover, at least part of the steps in the flowchart involved in each of the above-described embodiments can include multiple steps or stages, which are not necessarily executed at the same time, but can be executed at different times, and the execution sequence of these steps or stages is not necessarily sequential, but can be executed in rotation or alternation with at least part of other steps or stages or steps or stages in other steps.

[0124] Based on the same inventive concept, the present embodiment also provides a semiconductor heterostructure band gap testing device for implementing the above-mentioned semiconductor heterostructure band gap testing method. The problem-solving implementation scheme provided by the device is similar to the implementation scheme described in the above method, and therefore the specific limitations in one or more semiconductor heterostructure band gap testing device embodiments provided below can refer to the limitations of the semiconductor heterostructure band gap testing method described above, which will not be described here again.

[0125] In one embodiment, as Figure 13As shown, a band gap testing device of a semiconductor heterostructure is provided, comprising:

[0126] The first measuring module 1302 is configured to scan the first semiconductor material sample by using a visible spectrophotometer with a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample comprises, in sequence, a transparent double-sided tape, a first semiconductor material, and an aluminum oxide back plate.

[0127] The second measuring module 1304 is configured to scan the semiconductor heterostructure by using a visible spectrophotometer with a preset wavelength range to obtain a diffuse reflection spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure comprises, in sequence, a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape, and an aluminum oxide back plate; the second semiconductor material is different from the first semiconductor material.

[0128] The determining module 1306 is configured to determine band gap information of the first semiconductor material sample according to the diffuse reflection spectrum corresponding to the first semiconductor material sample, and determine band gap information of the semiconductor heterostructure according to the diffuse reflection spectrum corresponding to the semiconductor heterostructure.

[0129] The obtaining module 1308 is configured to obtain a band gap testing result of the semiconductor heterostructure according to the band gap information of the first semiconductor material sample and the band gap information of the semiconductor heterostructure.

[0130] In one of the embodiments, the first semiconductor material is indium selenide; the second semiconductor material is germanium arsenide; and the semiconductor heterostructure is a semiconductor structure formed based on indium selenide and germanium arsenide.

[0131] In one of the embodiments, the device further comprises a scanning module configured to use the aluminum oxide back plate as a substrate, and perform baseline scanning on the aluminum oxide back plate by using a reflection mode of a visible spectrophotometer with a preset wavelength range.

[0132] In one of the embodiments, the transparent double-sided tape has a light transmittance satisfying a preset light transmittance requirement; and the transparent double-sided tape contains one or more of polymethyl methacrylate, polyurethane glue, silicone rubber, chloroprene rubber, and polyvinyl acetate glue.

[0133] In one of the embodiments, the device further comprises a semiconductor material sample preparation module for adhering the first semiconductor material with Scotch tape to form a first structure; the first structure comprises the first semiconductor material and the Scotch tape in sequence; attaching the first structure to a side of the transparent double-sided tape without the separator, and removing the Scotch tape after compacting the first structure with the transparent double-sided tape by applying an external force to form a second structure; the second structure comprises the separator of the transparent double-sided tape, the transparent double-sided tape and the first semiconductor material in sequence; attaching the second structure to the alumina backplate, and removing the separator of the second structure to form the first semiconductor material sample.

[0134] In one of the embodiments, the device further comprises a heterostructure preparation module for removing the transparent double-sided tape with the first semiconductor material from the alumina backplate in the first semiconductor material sample; placing the transparent double-sided tape with the separator on the alumina backplate, and removing the separator to form a fourth structure; the fourth structure comprises the transparent double-sided tape and the alumina backplate in sequence; adhering the second semiconductor material with Scotch tape to form a fifth structure; the fifth structure comprises the second semiconductor material and the Scotch tape in sequence; placing the fifth structure on the transparent double-sided tape of the fourth structure, and removing the Scotch tape after compacting the fifth structure with the fourth structure by applying an external force to form a sixth structure; the sixth structure comprises the second semiconductor material, the transparent double-sided tape and the alumina backplate in sequence; placing the transparent double-sided tape with the first semiconductor material on the sixth structure to form a semiconductor heterostructure.

[0135] The above semiconductor heterostructure band gap testing device can be implemented by software, hardware or a combination thereof. The above modules can be embedded in or independent of the processor in the computer device in hardware form, or stored in the memory in the computer device in software form, so as to be called and executed by the processor.

[0136] In one of the embodiments, a computer device is provided, which can be a server, and the internal structure diagram thereof can be as shown in Figure 14The computer device shown in the figure includes a processor, a memory and a network interface connected through a system bus. The processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system, a computer program and a database. The internal memory provides an environment for running the operating system and the computer program in the non-volatile storage medium. The database of the computer device is configured to store the band gap test data of the semiconductor heterostructure. The network interface of the computer device is configured to communicate with an external terminal through a network connection. The computer program is executed by the processor to implement a band gap test method of a semiconductor heterostructure.

[0137] Those skilled in the art can understand that, Figure 14 The structure shown in the figure is only a block diagram of part of the structure related to the scheme of the present application, and does not constitute a limitation on the computer device to which the scheme of the present application is applied. The specific computer device can include more or fewer components than those shown in the figure, or combine certain components, or have a different component arrangement.

[0138] In one embodiment, a computer device is provided, including a memory and a processor, the memory storing a computer program, the computer program being executed by the processor to cause the processor to perform the steps of the band gap test method of a semiconductor heterostructure. The steps of the band gap test method of a semiconductor heterostructure can be the steps in the band gap test method of a semiconductor heterostructure of each of the above embodiments.

[0139] In one embodiment, a computer readable storage medium is provided, storing a computer program, the computer program being executed by the processor to cause the processor to perform the steps of the band gap test method of a semiconductor heterostructure. The steps of the band gap test method of a semiconductor heterostructure can be the steps in the band gap test method of a semiconductor heterostructure of each of the above embodiments.

[0140] In one embodiment, a computer program product is provided, including a computer program, the computer program being executed by the processor to cause the processor to perform the steps of the band gap test method of a semiconductor heterostructure. The steps of the band gap test method of a semiconductor heterostructure can be the steps in the band gap test method of a semiconductor heterostructure of each of the above embodiments.

[0141] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data for analysis, stored data, displayed data, etc.) involved in the present application are all information and data authorized by the user or authorized by all parties.

[0142] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program. The computer program can be stored in a non-volatile computer readable storage medium, and when the computer program is executed, the processes of the above-mentioned embodiments of the methods can be included. Any reference to memory, database or other medium used in the embodiments provided in the present application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical storage, high-density embedded non-volatile memory, resistive memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. As an illustration but not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The database involved in the embodiments provided in the present application can include at least one of a relational database and a non-relational database. The non-relational database can include a distributed database based on a block chain, etc., without being limited thereto. The processor involved in the embodiments provided in the present application can be a general-purpose processor, a central processing unit, a graphics processing unit, a digital signal processor, a programmable logic device, a data processing logic device based on quantum computing, etc., without being limited thereto.

[0143] Any combination of the technical features of the above embodiments can be made. In order to make the description simple, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combination of the technical features does not exist, it should be considered as the scope of the present application.

[0144] The above embodiments only express several implementation manners of the present application, and the description is more specific and detailed, but it should not be understood as a limitation on the scope of the patent of the present application. It should be pointed out that for ordinary skilled in the art, without departing from the concept of the present application, a number of modifications and improvements can be made, which are within the scope of protection of the present application. Therefore, the protection scope of the present application should be subject to the appended claims.

Claims

1. A method for measuring the bandgap of a semiconductor heterostructure, characterized in that, The method includes: A visible light spectrophotometer with a preset wavelength range is used to scan the first semiconductor material sample to obtain the diffuse reflectance spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample sequentially includes a transparent double-sided adhesive tape, the first semiconductor material, and an alumina backing plate; the light transmittance of the transparent double-sided adhesive tape meets the preset light transmittance requirements; the transparent double-sided adhesive tape contains one or more of polymethyl methacrylate, polyurethane adhesive, silicone rubber, neoprene rubber, and polyvinyl acetate adhesive; Using the alumina backplate as a substrate, a baseline scan of the alumina backplate is performed using the reflection mode of the visible light spectrophotometer within the preset wavelength range. The semiconductor heterostructure is scanned using a visible light spectrophotometer within the preset wavelength range to obtain the diffuse reflectance spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure sequentially comprises transparent double-sided tape, a first semiconductor material, a second semiconductor material, transparent double-sided tape, and an alumina backplate; the second semiconductor material is a different semiconductor material from the first semiconductor material; Based on the diffuse reflectance spectrum corresponding to the first semiconductor material sample, the band gap information of the first semiconductor material sample is determined; and based on the diffuse reflectance spectrum corresponding to the semiconductor heterostructure, the band gap information of the semiconductor heterostructure is determined. Based on the bandgap information of the first semiconductor material sample and the bandgap information of the semiconductor heterostructure, the bandgap test results for the semiconductor heterostructure are obtained.

2. The method according to claim 1, characterized in that, The first semiconductor material is indium selenide; the second semiconductor material is germanium arsenide; and the semiconductor heterostructure is a semiconductor structure formed based on the indium selenide and the germanium arsenide.

3. The method according to any one of claims 1 to 2, characterized in that, The method further includes: The first semiconductor material is adhered to Scotch tape to form a first structure; the first structure sequentially comprises the first semiconductor material and the Scotch tape. The first structure is attached to the side of the transparent double-sided tape without the diaphragm, and the first structure and the transparent double-sided tape are pressed together by applying external force, and then the Scotch tape is removed to form the second structure; the second structure includes the diaphragm of the transparent double-sided tape, the transparent double-sided tape, and the first semiconductor material in sequence; The second structure is attached to the alumina backing plate, and the diaphragm of the second structure is removed to form the first semiconductor material sample.

4. The method according to claim 3, characterized in that, The method further includes: Remove the transparent double-sided adhesive tape containing the first semiconductor material from the alumina backing plate in the first semiconductor material sample; A transparent double-sided tape with the diaphragm is placed on the alumina backing plate, and the diaphragm is removed to form a fourth structure; the fourth structure includes the transparent double-sided tape and the alumina backing plate in sequence. The second semiconductor material is adhered using Scotch tape to form a fifth structure; the fifth structure sequentially comprises the second semiconductor material and the Scotch tape. The fifth structure is placed on the transparent double-sided tape of the fourth structure, and the fifth structure and the fourth structure are pressed together by applying external force. Then the Scotch tape is removed to form the sixth structure. The sixth structure includes the second semiconductor material, the transparent double-sided tape and the alumina backplate in sequence. The transparent double-sided tape with the first semiconductor material attached is placed on the sixth structure to form the semiconductor heterostructure.

5. A bandgap testing device for semiconductor heterostructures, characterized in that, The apparatus for performing a bandgap testing method for a semiconductor heterostructure as described in any one of claims 1 to 4, the apparatus comprising: The first measurement module is used to scan the first semiconductor material sample using a visible light spectrophotometer with a preset wavelength range to obtain the diffuse reflectance spectrum corresponding to the first semiconductor material sample; the first semiconductor material sample sequentially includes a transparent double-sided adhesive tape, the first semiconductor material, and an alumina backing plate; the light transmittance of the transparent double-sided adhesive tape meets the preset light transmittance requirements; the transparent double-sided adhesive tape contains one or more of polymethyl methacrylate, polyurethane adhesive, silicone rubber, neoprene rubber, and polyvinyl acetate adhesive; The scanning module is used to perform baseline scanning on the alumina backplate as a substrate using the reflection mode of the visible light spectrophotometer within the preset wavelength range. The second measurement module is used to scan the semiconductor heterostructure using a visible light spectrophotometer within the preset wavelength range to obtain the diffuse reflectance spectrum corresponding to the semiconductor heterostructure; the semiconductor heterostructure sequentially includes a transparent double-sided tape, a first semiconductor material, a second semiconductor material, a transparent double-sided tape, and an alumina backplate; the second semiconductor material is a different semiconductor material from the first semiconductor material; The determining module is used to determine the band gap information of the first semiconductor material sample based on the diffuse reflectance spectrum corresponding to the first semiconductor material sample, and to determine the band gap information of the semiconductor heterostructure based on the diffuse reflectance spectrum corresponding to the semiconductor heterostructure. The acquisition module is used to obtain the bandgap test results for the semiconductor heterostructure based on the bandgap information of the first semiconductor material sample and the bandgap information of the semiconductor heterostructure.

6. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 4.

7. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 4.

8. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 4.

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