IGBT device testing method and system

Abstract

The present invention proposes an IGBT device testing method and system, wherein a controller controls a path module to switch to a conducting state, and controls a power supply module to apply a current signal; a voltage measuring device detects a first voltage between a collector measuring terminal and an emitter measuring terminal of the IGBT device to be tested, and transmits the detected first voltage to the controller; when the controller detects that the first voltage has a sinusoidal oscillation, the controller controls the power supply module to stop applying the current signal. When the first voltage has a sinusoidal oscillation, the controller controls the power supply module to stop applying the current signal and turns off the applied signal, thereby forming a protective state for the device and effectively protecting the test device.

Description

Technical Field

[0001] The present invention relates to the field of chips, and in particular to an IGBT device testing method and system. Background Art

[0002] During the wafer production process, various tests are required to screen out unqualified products and improve the process. During the wafer measurement process, a test machine is required.

[0003] The current test machine for measuring devices can only stop testing the next parameter when the parameter is applied with a failure test. For a period of time, the electrical signal applied by the test machine will not be interrupted, but will continue to be applied, and the device being measured will continue to receive the signal. However, if some specific devices cannot continue to receive electrical signals, the failure test will not protect the device, and may even cause a burnout. Summary of the invention

[0004] The object of the present invention is to provide an IGBT device testing method and system to improve the above-mentioned problem.

[0005] In order to achieve the above purpose, the technical solution adopted by the embodiment of the present invention is as follows:

[0006] In a first aspect, an embodiment of the present invention provides an IGBT device testing system, the IGBT device testing system comprising a controller, a power module, a voltage measuring device and a path module, the controller being connected to the power module, the voltage measuring device and the path module respectively;

[0007] When performing a breakdown voltage test of the collector terminal and the emitter terminal, the positive end of the power module is connected to the collector signal input terminal of the IGBT device to be tested, and the negative end of the power module is connected to the emitter signal input terminal of the IGBT device to be tested; the first end of the path module is connected to the gate signal input terminal of the IGBT device to be tested, and the second end of the path module is connected to the emitter measurement terminal of the IGBT device to be tested; one end of the voltage measuring device is connected to the collector measurement terminal of the IGBT device to be tested, and the other end of the voltage measuring device is connected to the emitter measurement terminal of the IGBT device to be tested;

[0008] The controller is used to control the passage module to switch to a conducting state, and control the power supply module to apply a current signal;

[0009] The voltage measuring device is used to detect a first voltage between a collector measuring terminal and an emitter measuring terminal of the IGBT device to be tested, and transmit the detected first voltage to the controller;

[0010] The controller is used to control the power supply module to stop applying the current signal when it is detected that the first voltage has a sinusoidal oscillation.

[0011] In a second aspect, an embodiment of the present invention provides an IGBT device testing method, which is applied to the above-mentioned IGBT device testing system, and the method includes:

[0012] The controller controls the passage module to switch to a conducting state, and controls the power supply module to apply a current signal;

[0013] The voltage measuring device detects a first voltage between a collector measuring terminal and an emitter measuring terminal of the IGBT device to be tested, and transmits the detected first voltage to the controller;

[0014] When the controller detects that the first voltage has sinusoidal oscillation, the controller controls the power module to stop applying the current signal.

[0015] Compared with the prior art, the embodiment of the present invention provides an IGBT device testing method and system, in which the controller controls the path module to switch to the on state and controls the power supply module to apply a current signal; the voltage measuring device detects the first voltage between the collector measuring terminal and the emitter measuring terminal of the IGBT device to be tested, and transmits the detected first voltage to the controller; when the controller monitors that the first voltage has a sinusoidal oscillation, the controller controls the power supply module to stop applying the current signal. When the first voltage is monitored to have a sinusoidal oscillation, the power supply module is controlled to stop applying the current signal and turn off the applied signal, thereby forming a protective form for the device and effectively protecting the test device.

[0016] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 This is one of the structural schematic diagrams of the IGBT device testing system provided by an embodiment of the present invention.

[0019] Figure 2 The second structural schematic diagram of the IGBT device testing system provided by the embodiment of the present invention.

[0020] Figure 3 The third structural schematic diagram of the IGBT device testing system provided by the embodiment of the present invention.

[0021] Figure 4 The fourth structural schematic diagram of the IGBT device testing system provided in an embodiment of the present invention.

[0022] Figure 5 A schematic flow chart of an IGBT device testing method provided by an embodiment of the present invention.

[0023] In the figure: 11-controller; 12-power module; 13-voltage measuring device; 14-path module; 20-IGBT device to be tested; A1-first current measuring device; A2-second current measuring device; A3-third current measuring device; A4-fourth current measuring device. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0025] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0026] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. At the same time, in the description of the present invention, the terms "first", "second", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0027] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "comprise a ..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0028] In the description of the present invention, it should be noted that the terms "upper", "lower", "inside", "outside", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, or are directions or positional relationships in which the product of the invention is usually placed when in use. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present invention.

[0029] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0030] Some embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0031] The current device tester can only stop testing the next parameter when the parameter application fails. The electrical signal applied by the tester will not be interrupted for a period of time, but will continue to be applied, and the device being measured will continue to receive the signal. Since the IGBT device itself has a relatively weak ability to resist current and voltage signals, and the signal applied to the device is relatively critical or even exceeds the device's tolerance, if the signal is continuously applied to the device, the device will be broken down or burned out in serious cases.

[0032] In order to improve the above-mentioned problem, an embodiment of the present invention provides an IGBT device testing system, which monitors the circuit of the measurement signal while applying an electrical signal. If it is found that the measurement signal fluctuates or is abnormal, the applied electrical signal is linked to be shut down. In this way, the circuit of the applied electrical signal will be disconnected, thereby protecting the device.

[0033] Please refer to Figure 1 , Figure 1 The IGBT device testing system provided by the embodiment of the present invention comprises a controller 11, a power module 12, a voltage measuring device 13 and a path module 14, wherein the controller 11 is connected to the power module 12, the voltage measuring device 13 and the path module 14 respectively.

[0034] The controller 11 in the embodiment of the present invention can be a general-purpose processor, including a central processing unit (CPU), a network processor (NP), etc.; it can also be a digital signal processor (DSP), an application specific integrated circuit (ASIC), a field programmable gate array (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components.

[0035] When performing a breakdown voltage test on the collector terminal and the emitter terminal, the positive end of the power module 12 is connected to the collector signal input terminal CF of the IGBT device 20 to be tested, and the negative end of the power module 12 is connected to the emitter signal input terminal EF of the IGBT device 20 to be tested; the first end of the path module 14 is connected to the gate signal input terminal GF of the IGBT device 20 to be tested, and the second end of the path module 14 is connected to the emitter measurement terminal ES of the IGBT device 20 to be tested; one end of the voltage measuring device is connected to the collector measurement terminal CS of the IGBT device 20 to be tested, and the other end of the voltage measuring device is connected to the emitter measurement terminal ES of the IGBT device 20 to be tested.

[0036] The controller 11 is used to control the passage module 14 to switch to a conducting state, and control the power supply module 12 to apply a current signal.

[0037] When the path module 14 is switched to the on state, the gate signal input terminal GF and the emitter measurement terminal ES of the IGBT device 20 to be tested are short-circuited and grounded.

[0038] The gate signal measuring terminal GS in the figure is in a suspended state. It should be noted that when the breakdown voltage test of the collector terminal and the emitter terminal is performed, the IGBT device 20 to be tested is in a non-turned-on state.

[0039] The voltage measuring device 13 is used to detect a first voltage between the collector measuring terminal CS and the emitter measuring terminal ES of the IGBT device 20 to be tested, and transmit the detected first voltage to the controller 11 .

[0040] The controller 11 is used to control the power supply module 12 to stop applying the current signal when it detects that the first voltage has a sinusoidal oscillation.

[0041] When a sinusoidal oscillation of the first voltage is detected, the power supply module 12 is controlled to immediately stop applying the current signal and turn off the applied signal, thereby forming a protection state for the device and effectively protecting the test device.

[0042] In an optional implementation, the controller 11 is configured to subtract a first preset value from a valley value of the sine wave of the first voltage to obtain a breakdown voltage between the collector terminal and the emitter terminal.

[0043] Please refer to Figure 2 , Figure 2 The second structural diagram of the IGBT device testing system provided by the embodiment of the present invention. The IGBT device testing system further includes a first current measuring device A1 and a second current measuring device A2, and the first current measuring device A1 and the second current measuring device A2 are both connected to the controller 11.

[0044] When performing a device turn-on voltage test, the positive end of the power module 12 is connected to the collector signal input terminal CF of the IGBT device 20 to be tested, and the negative end of the power module 12 is connected to the emitter signal input terminal EF of the IGBT device 20 to be tested; the first end of the path module 14 is connected to the gate signal input terminal GF of the IGBT device 20 to be tested, and the second end of the path module 14 is connected to the collector signal input terminal CF of the IGBT device 20 to be tested; the first current measuring device A1 is arranged between the collector signal input terminal CF of the IGBT device 20 to be tested and the positive end of the power module 12, and the second current measuring device A2 is arranged between the emitter signal input terminal EF of the IGBT device 20 to be tested and the negative end of the power module 12; one end of the voltage measuring device is connected to the collector measurement terminal CS of the IGBT device 20 to be tested, and the other end of the voltage measuring device is connected to the emitter measurement terminal ES of the IGBT device 20 to be tested.

[0045] The controller 11 is used to control the passage module 14 to switch to a conducting state, and control the power supply module 12 to apply a current signal.

[0046] When the path module 14 is switched to the on state, the gate signal input terminal GF and the collector signal input terminal CF of the IGBT device 20 to be tested are short-circuited.

[0047] The first current measuring device A1 is used to detect the inflow current of the collector signal input terminal CF of the IGBT device 20 to be tested, and transmit the inflow current to the controller 11 .

[0048] The second current measuring device A2 is used to detect the outflow current of the emitter signal input terminal EF of the IGBT device 20 to be tested, and transmit the outflow current to the controller 11 .

[0049] The controller 11 is used to send a trigger signal to the voltage measuring device 13 when the inflow current is equal to the outflow current.

[0050] The voltage measuring device 13 is used to detect a second voltage between the collector measuring terminal CS and the emitter measuring terminal ES of the IGBT device 20 to be tested after receiving the trigger signal, and transmit the detected second voltage to the controller 11 .

[0051] The controller 11 is used to control the power supply module 12 to stop applying the current signal when it detects that the second voltage has a sinusoidal oscillation.

[0052] When the inflow current is equal to the outflow current, the voltage between the gate measurement terminal GS and the emitter measurement terminal ES of the IGBT device 20 to be tested is equal to the voltage between the collector measurement terminal CS and the emitter measurement terminal ES of the IGBT device 20 to be tested. The second voltage between the collector measurement terminal CS and the emitter measurement terminal ES of the IGBT device 20 to be tested is the turn-on voltage of the device. When the turn-on voltage presents a sine wave, the control power supply module 12 stops applying the current signal. At this time, the applied signal is turned off so that the collector C terminal and the emitter E terminal cannot form a loop, and the device is protected.

[0053] Optionally, the controller 11 is configured to use the second voltage whose stability time exceeds a preset time as the device start-up voltage when the second voltage remains stable.

[0054] Please refer to Figure 3 , Figure 3 The third structural diagram of the IGBT device testing system provided by the embodiment of the present invention is as follows: The IGBT device testing system further includes a third current measuring device A3 , and the third current measuring device A3 is connected to the controller 11 .

[0055] When performing leakage current test on the collector terminal and the emitter terminal, the positive end of the power module 12 is connected to the collector signal input terminal CF of the IGBT device 20 to be tested, and the negative end of the power module 12 is connected to the emitter signal input terminal EF of the IGBT device 20 to be tested; the first end of the path module 14 is connected to the gate signal input terminal GF of the IGBT device 20 to be tested, one end of the third current measuring device A3 is connected to the emitter measurement terminal ES of the IGBT device 20 to be tested, and the other end of the third current measuring device A3 is connected to the second end of the path module 14, and a grounding terminal is led out at the connection between the third current measuring device A3 and the path module 14.

[0056] The controller 11 is used to control the passage module 14 to switch to a conducting state, and control the power supply module 12 to apply a pulse voltage.

[0057] When the path module 14 is switched to the on state, the gate signal input terminal GF and the emitter measurement terminal ES of the IGBT device 20 to be tested are short-circuited.

[0058] The third current measuring device A3 is used to detect the outflow current of the emitter measuring terminal ES of the IGBT device 20 to be tested, and transmit the detected outflow current to the controller 11 .

[0059] The controller 11 is used to control the power supply module 12 to stop applying the pulse voltage when it detects that the outflow current transmitted by the third current measuring device A3 has sinusoidal oscillation or exceeds the current clamping upper limit.

[0060] By immediately stopping the application of the pulse voltage, the IGBT device 20 to be tested is protected.

[0061] Optionally, when the outflow current transmitted by the third current measuring device A3 oscillates in a sinusoidal wave, the controller 11 is used to subtract a second preset value from a valley value of the outflow current transmitted by the third current measuring device A3 as a leakage current safety value of the collector terminal and the emitter terminal.

[0062] Please refer to Figure 4 , Figure 4 The fourth structural diagram of the IGBT device testing system provided by the embodiment of the present invention is as follows: The IGBT device testing system further includes a fourth current measuring device A4 , which is connected to the controller 11 .

[0063] When performing a leakage current test on the gate terminal and the emitter terminal, the positive terminal of the power module 12 is connected to the gate signal input terminal GF of the IGBT device 20 to be tested, and the negative terminal of the power module 12 is connected to the emitter signal input terminal EF of the IGBT device 20 to be tested; the first end of the path module 14 is connected to the collector signal input terminal CF of the IGBT device 20 to be tested, one end of the fourth current measuring device A4 is connected to the emitter measurement terminal ES of the IGBT device 20 to be tested, and the other end of the fourth current measuring device A4 is connected to the second end of the path module 14, and a grounding terminal is led out at the connection between the fourth current measuring device A4 and the path module 14.

[0064] The controller 11 is used to control the passage module 14 to switch to a conducting state, and control the power supply module 12 to apply a pulse voltage.

[0065] When the path module 14 is switched to the on state, the collector signal input terminal CF and the emitter measurement terminal ES of the IGBT device 20 to be tested are short-circuited.

[0066] The fourth current measuring device A4 is used to detect the outflow current of the emitter measuring terminal ES of the IGBT device 20 to be tested, and transmit the detected outflow current to the controller 11 .

[0067] The controller 11 is used to control the power supply module 12 to stop applying the pulse voltage when it is detected that the outflow current transmitted by the fourth current measuring device A4 oscillates in a sinusoidal wave or exceeds the upper limit of the current clamping.

[0068] By immediately stopping the application of pulse voltage, it plays a protective role.

[0069] Optionally, when the outflow current transmitted by the fourth current measuring device A4 oscillates in a sinusoidal wave, the controller 11 is used to subtract a third preset value from a valley value of the outflow current transmitted by the fourth current measuring device A4 as a leakage current safety value of the gate terminal and the emitter terminal.

[0070] In an embodiment of the present invention, a clamping analysis is performed on a signal applied to an IGBT device to confirm that the measured signal is clamped, but at the same time, the signal applied to the IGBT device still causes damage to the IGBT device. At the same time, the signal applied to the IGBT device is continuously output, and the IGBT device may not be able to withstand the energy of the electrical signal, resulting in irreversible damage to the IGBT device. In other words, the fundamental way to protect the IGBT device is to turn off the applied signal. Therefore, the present invention turns off the applied electrical property when the clamping signal is reached, thereby protecting the IGBT device.

[0071] The embodiment of the present invention further provides an IGBT device testing method, which can be applied to but not limited to the above-mentioned IGBT device testing system. Figure 5 , the IGBT device testing method includes: S111, S112 and S113, which are specifically described as follows.

[0072] S111, the controller controls the path module to switch to the on state, and controls the power supply module to apply a current signal.

[0073] S112, the voltage measuring device detects a first voltage between a collector measuring terminal and an emitter measuring terminal of the IGBT device to be measured, and transmits the detected first voltage to the controller.

[0074] S113, when the controller detects that the first voltage has a sinusoidal oscillation, the controller controls the power supply module to stop applying the current signal.

[0075] Optionally, the IGBT device testing method further includes: S114, which is described in detail as follows.

[0076] S114, the controller subtracts a first preset value from a valley value of the sine wave of the first voltage as a breakdown voltage between the collector terminal and the emitter terminal.

[0077] It should be noted that the IGBT device testing method provided in this embodiment can perform the functions and uses shown in the above IGBT device testing system embodiment to achieve the corresponding technical effects. For the sake of brief description, for parts not mentioned in this embodiment, reference can be made to the corresponding contents in the above embodiments.

[0078] In summary, an IGBT device testing method and system provided by an embodiment of the present invention, the controller controls the passage module to switch to the on state, and controls the power supply module to apply a current signal; the voltage measuring device detects the first voltage between the collector measuring terminal and the emitter measuring terminal of the IGBT device to be tested, and transmits the detected first voltage to the controller; when the controller monitors that the first voltage has a sinusoidal oscillation, the controller controls the power supply module to stop applying the current signal. When the first voltage is monitored to have a sinusoidal oscillation, the power supply module is controlled to stop applying the current signal and turn off the applied signal, thereby forming a protective form for the device and effectively protecting the test device.

[0079] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

[0080] It will be apparent to those skilled in the art that the invention is not limited to the details of the exemplary embodiments described above and that the invention can be implemented in other specific forms without departing from the spirit or essential features of the invention. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of the invention is defined by the appended claims rather than the foregoing description, and it is intended that all variations falling within the meaning and scope of the equivalent elements of the claims be included in the invention. Any reference numeral in a claim should not be considered as limiting the claim to which it relates.

Claims

1. An IGBT device testing system, characterized in that: The IGBT device testing system comprises a controller, a power module, a voltage measuring device and a path module, wherein the controller is connected to the power module, the voltage measuring device and the path module respectively; When performing a breakdown voltage test of the collector terminal and the emitter terminal, the positive end of the power module is connected to the collector signal input terminal of the IGBT device to be tested, and the negative end of the power module is connected to the emitter signal input terminal of the IGBT device to be tested; the first end of the path module is connected to the gate signal input terminal of the IGBT device to be tested, and the second end of the path module is connected to the emitter measurement terminal of the IGBT device to be tested; one end of the voltage measuring device is connected to the collector measurement terminal of the IGBT device to be tested, and the other end of the voltage measuring device is connected to the emitter measurement terminal of the IGBT device to be tested; The controller is used to control the passage module to switch to a conducting state, and control the power supply module to apply a current signal; The voltage measuring device is used to detect a first voltage between a collector measuring terminal and an emitter measuring terminal of the IGBT device to be tested, and transmit the detected first voltage to the controller; The controller is used to control the power supply module to stop applying the current signal when it is detected that the first voltage has a sinusoidal oscillation.

2. The IGBT device testing system according to claim 1, characterized in that: The controller is used for subtracting a first preset value from a valley value of the sine wave of the first voltage to obtain a breakdown voltage between the collector terminal and the emitter terminal.

3. The IGBT device testing system according to claim 1, characterized in that: The IGBT device testing system further includes a first current measuring device and a second current measuring device, wherein the first current measuring device and the second current measuring device are both connected to the controller; When performing a device turn-on voltage test, the positive end of the power module is connected to the collector signal input end of the IGBT device to be tested, and the negative end of the power module is connected to the emitter signal input end of the IGBT device to be tested; the first end of the path module is connected to the gate signal input end of the IGBT device to be tested, and the second end of the path module is connected to the collector signal input end of the IGBT device to be tested; the first current measuring device is arranged between the collector signal input end of the IGBT device to be tested and the positive end of the power module, and the second current measuring device is arranged between the emitter signal input end of the IGBT device to be tested and the negative end of the power module; one end of the voltage measuring device is connected to the collector measurement end of the IGBT device to be tested, and the other end of the voltage measuring device is connected to the emitter measurement end of the IGBT device to be tested; The controller is used to control the passage module to switch to a conducting state, and control the power supply module to apply a current signal; The first current measuring device is used to detect the inflow current of the collector signal input terminal of the IGBT device to be tested, and transmit the inflow current to the controller; The second current measuring device is used to detect the outflow current of the emitter signal input terminal of the IGBT device to be tested, and transmit the outflow current to the controller; The controller is used for sending a trigger signal to the voltage measuring device when the inflow current is equal to the outflow current; The voltage measuring device is used to detect a second voltage between the collector measuring terminal and the emitter measuring terminal of the IGBT device to be tested after receiving the trigger signal, and transmit the detected second voltage to the controller; The controller is used to control the power supply module to stop applying the current signal when it is detected that the second voltage has a sinusoidal oscillation.

4. The IGBT device testing system according to claim 3, characterized in that: The controller is used for taking the second voltage whose stability time exceeds a preset time as the device start-up voltage when the second voltage remains stable.

5. The IGBT device testing system according to claim 1, characterized in that: The IGBT device testing system further includes a third current measuring device, wherein the third current measuring device is connected to the controller; When conducting leakage current test of the collector terminal and the emitter terminal, the positive terminal of the power module is connected to the collector signal input terminal of the IGBT device to be tested, and the negative terminal of the power module is connected to the emitter signal input terminal of the IGBT device to be tested; the first end of the path module is connected to the gate signal input terminal of the IGBT device to be tested, one end of the third current measuring device is connected to the emitter measuring terminal of the IGBT device to be tested, and the other end of the third current measuring device is connected to the second end of the path module, and a grounding terminal is led out at the connection between the third current measuring device and the path module; The controller is used to control the passage module to switch to a conducting state, and control the power supply module to apply a pulse voltage; The third current measuring device is used to detect the outflow current of the emitter measuring terminal of the IGBT device to be tested, and transmit the detected outflow current to the controller; The controller is used to control the power supply module to stop applying the pulse voltage when it is detected that the outflow current transmitted by the third current measuring device has sinusoidal oscillation or exceeds the current clamping upper limit.

6. The IGBT device testing system according to claim 5, characterized in that: When the outflow current transmitted by the third current measuring device oscillates in a sinusoidal wave, the controller is used to subtract a second preset value from a valley value of the outflow current transmitted by the third current measuring device as a leakage current safety value of the collector terminal and the emitter terminal.

7. The IGBT device testing system according to claim 1, characterized in that: The IGBT device testing system further includes a fourth current measuring device, wherein the fourth current measuring device is connected to the controller; When performing a leakage current test of the gate terminal and the emitter terminal, the positive terminal of the power module is connected to the gate signal input terminal of the IGBT device to be tested, and the negative terminal of the power module is connected to the emitter signal input terminal of the IGBT device to be tested; the first end of the path module is connected to the collector signal input terminal of the IGBT device to be tested, one end of the fourth current measuring device is connected to the emitter measuring terminal of the IGBT device to be tested, and the other end of the fourth current measuring device is connected to the second end of the path module, and a grounding terminal is led out at the connection between the fourth current measuring device and the path module; The controller is used to control the passage module to switch to a conducting state, and control the power supply module to apply a pulse voltage; The fourth current measuring device is used to detect the outflow current of the emitter measuring terminal of the IGBT device to be tested, and transmit the detected outflow current to the controller; The controller is used to control the power supply module to stop applying the pulse voltage when it is detected that the outflow current transmitted by the fourth current measuring device has sinusoidal oscillation or exceeds the current clamping upper limit.

8. The IGBT device testing system according to claim 7, characterized in that: When the outflow current transmitted by the fourth current measuring device oscillates in a sinusoidal wave, the controller is used to subtract a third preset value from the valley value of the outflow current transmitted by the fourth current measuring device as a leakage current safety value of the gate terminal and the emitter terminal.

9. An IGBT device testing method, characterized in that: The IGBT device testing system applied to any one of claims 1 to 4, the method comprising: The controller controls the passage module to switch to a conducting state, and controls the power supply module to apply a current signal; The voltage measuring device detects a first voltage between a collector measuring terminal and an emitter measuring terminal of the IGBT device to be tested, and transmits the detected first voltage to the controller; When the controller detects that the first voltage has sinusoidal oscillation, the controller controls the power module to stop applying the current signal.

10. The IGBT device testing method according to claim 9, characterized in that: The method further comprises: The controller subtracts a first preset value from a valley value of the sine wave of the first voltage to obtain a breakdown voltage between the collector terminal and the emitter terminal.

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