Method for non-destructively transferring two-dimensional material to flexible substrate

Abstract

The invention discloses a method for losslessly transferring a two-dimensional material to a flexible substrate. The method comprises the following steps: step 1, growing a two-dimensional TMDCs material on a rigid SiO2 / Si substrate; 2, forming a uniform water film on a to-be-transferred surface of the flexible substrate, and attaching the uniform water film to the two-dimensional TMDCs material on the rigid SiO2 / Si substrate; and 3, synchronously separating the flexible substrate carrying the water film and the two-dimensional TMDCs material from the rigid SiO2 / Si substrate along the direction vertical to the surface, and drying. The transfer method is not only suitable for different types of flexible substrates, but also can be used for transferring various types of two-dimensional materials, the operation is simple and convenient, the efficiency is high, the speed is high, and the transferred material has the characteristics of high crystal quality, complete structure, clean surface and the like; and further development of physical property research of the flexible two-dimensional material and subsequent preparation of a flexible electronic device based on the two-dimensional material are facilitated.

Description

Technical Field

[0001] The invention belongs to the field of two-dimensional semiconductor materials and relates to a method for losslessly transferring two-dimensional materials to a flexible substrate. Background Art

[0002] Flexible sensors are one of the basic building blocks of a new generation of strategic and forward-looking flexible information devices. High-quality flexible electronic materials are the core of high-performance flexible sensors. Two-dimensional transition metal dichalcogenides (TMDCs) have flexibility, adjustable band gaps, and high mobility. They have become the research focus in the field of flexible electronic devices and have brought new hope for the development of flexible electronics. However, flexible electronic devices usually require large areas and high-quality materials, and the complicated processes of manufacturing and integration limit the practical application of two-dimensional TMDCs.

[0003] For flexible electronic devices, the most challenging technical barrier is the direct preparation of two-dimensional TMDCs materials on flexible substrates. The synthesis of two-dimensional TMDCs materials by chemical vapor deposition (CVD) requires a relatively high temperature. The use of molten salts has effectively reduced the temperature for the preparation of two-dimensional TMDCs materials to 550-850°C, but it still cannot meet the requirements for the direct growth of two-dimensional TMDCs materials on flexible substrates. Currently, SiO2 / Si is the most commonly used substrate for the preparation of two-dimensional TMDCs materials by CVD. How to transfer these two-dimensional TMDCs materials losslessly to a suitable target flexible substrate has become the key to further conducting physical property research on flexible two-dimensional materials and the subsequent preparation of flexible electronic devices based on two-dimensional materials. At present, the existing dry and wet transfer technologies for two-dimensional TMDCs materials will cause the two-dimensional TMDCs materials to be contaminated and damaged to varying degrees during the transfer process, increasing the defects of the two-dimensional TMDCs materials, which will greatly affect the performance of the device. CN104960286A discloses a controllable two-dimensional material flexible transfer method, which can accurately transfer the two-dimensional material to the target position of the target substrate without destroying the original structure and performance of the target substrate, but the use of organic solvents during the operation may cause the two-dimensional material to be contaminated or damaged to a certain extent. CN109133174A discloses a two-dimensional material transfer method and two-dimensional material and its application, the two-dimensional material obtained by the method has good integrity, and the reagents used are environmentally friendly and pollution-free, but the method requires heating and pressurization during the transfer process, and is not suitable for flexible substrates. Therefore, the art is in urgent need of an environmentally friendly and pollution-free two-dimensional material transfer method that can transfer nanoscale two-dimensional materials from a growth substrate to a flexible substrate intactly and losslessly, providing important support for further research on the physical properties of flexible two-dimensional materials and subsequent preparation of flexible electronic devices based on two-dimensional materials. Summary of the invention

[0004] In view of various problems existing in traditional transfer methods, the purpose of the present invention is to provide a method for non-destructive transfer of two-dimensional materials to flexible substrates, which effectively avoids the pollution and damage problems in traditional transfer methods. This method can not only achieve high-quality transfer, but also ensure that the original properties of the material are not damaged, providing an ideal technical means for further research on the physical properties of flexible two-dimensional materials and the subsequent preparation of flexible electronic devices based on two-dimensional materials.

[0005] In order to achieve the above object, the technical solution adopted by the present invention includes:

[0006] A method for losslessly transferring a two-dimensional material to a flexible substrate comprises the following steps:

[0007] Step 1: growing two-dimensional TMDCs materials on a rigid SiO2 / Si substrate;

[0008] Step 2: A uniform water film is formed on the surface of the flexible substrate to be transferred, which is bonded to the two-dimensional TMDCs material on the rigid SiO2 / Si substrate;

[0009] Step 3: Separate the flexible substrate carrying the water film and the two-dimensional TMDCs material from the rigid SiO2 / Si substrate synchronously along a direction perpendicular to the surface, and dry them.

[0010] Optionally, the water film is formed by spraying, the aperture of the nozzle is 0.5-0.8 mm, the flow rate is 0.1-0.5 L / min, and the nozzle is kept at a distance of 10-20 cm from the surface of the flexible substrate during spraying.

[0011] Optionally, the water film is formed by spraying, the aperture of the nozzle is 0.5 mm, the flow rate is 0.1 L / min, and the distance between the nozzle and the surface of the flexible substrate is maintained at 15 cm during spraying.

[0012] Optionally, the water droplet diameter of the water film is 10 to 40 μm.

[0013] Optionally, plasma treatment is performed before forming a water film on the surface to be transferred of the flexible substrate; the plasma treatment conditions include a power of 20 to 100 W, a time of 30 to 300 seconds, a gas type of air or oxygen, and a gas pressure of 10 to 1000 Pa.

[0014] Optionally, the plasma treatment conditions include power of 40 W, time of 60 seconds, gas type of oxygen, and gas pressure of 100 Pa.

[0015] Optionally, the drying temperature is 15-30° C. and the drying time is 3-5 minutes.

[0016] Optionally, the drying temperature is 25° C. and the drying time is 4 minutes.

[0017] Optionally, the area of ​​the transfer surface of the flexible substrate is larger than the area of ​​the growth surface of the SiO2 / Si substrate; the preparation material of the flexible substrate is selected from at least one of polydimethylsiloxane, polyimide, polyethylene terephthalate, polyethylene, polyethylene naphthalate, metal foil, polymethyl methacrylate and polycarbonate.

[0018] Optionally, the oxide layer thickness of the rigid SiO2 / Si substrate is 285 nm; the two-dimensional TMDCs material is prepared by depositing on the SiO2 / Si substrate by chemical vapor deposition.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] 1. This method of non-destructive transfer of two-dimensional materials has excellent universality and is suitable for transferring two-dimensional materials to different types of flexible substrates. Whether it is a polymer film, metal foil or other types of flexible substrates, this method can effectively transfer the two-dimensional material to the target substrate intact without causing contamination or damage to the material, making it possible to directly prepare high-performance flexible devices on different types of flexible substrates, greatly expanding the application of two-dimensional materials in the field of flexible devices.

[0021] 2. The present invention chooses to spray a layer of water film on the surface of the flexible substrate, and adhere the flexible substrate film with the water film to the surface of the two-dimensional material sample. When the two-dimensional material is separated from the growth substrate, the water film can form a buffer layer between the flexible substrate and the two-dimensional material sample, reducing the direct contact and excessive adhesion between the flexible substrate and the sample. While maintaining the integrity of the sample, the two-dimensional material can be peeled off from the growth substrate more smoothly, preventing material tearing or cracking caused by excessive adhesion. In addition, during the bonding process, the water film can evenly distribute pressure between the flexible substrate and the two-dimensional material sample to avoid local mechanical stress concentration. This helps to protect the sample from uneven stress and further reduce the risk of cracks or deformation.

[0022] 3. The present invention uses deionized water as an intermediary, which not only avoids the pollution problem caused by using PMMA, organic solvents, glue or adhesives as transfer carriers in traditional transfer methods, but also forms an ultra-clean interface, maintains the high surface quality of the material, and ensures that the electronic properties of the two-dimensional material in subsequent applications are not affected. The entire transfer process is gentle and does not involve high temperature or chemical treatment, ensuring that the original structure and physical and chemical properties of the two-dimensional material are not destroyed, which is suitable for further research on the intrinsic properties of the material. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] The accompanying drawings are used to provide a further understanding of the present disclosure and constitute a part of the specification. Together with the following specific embodiments, they are used to explain the present disclosure but do not constitute a limitation of the present disclosure. In the accompanying drawings:

[0024] Figure 1 Schematic diagram of the transfer process of two-dimensional materials;

[0025] Figure 2 Optical image of MoS2 before transfer in Example 1;

[0026] Figure 3 Optical image of MoS2 after PDMS transfer in Example 1;

[0027] Figure 4 Optical image of MoS2 before transfer in Example 2;

[0028] Figure 5 Optical image of MoS2 after PI transfer in Example 2;

[0029] Figure 6 Optical image of MoS2 before transfer in Example 3;

[0030] Figure 7 Optical image of MoS2 after transfer with PET in Example 3;

[0031] Figure 8 Optical image of MoS2 before transfer in Example 4;

[0032] Fig. 9 Optical image of MoS2 after PE transfer in Example 4;

[0033] Fig.10 Optical image of MoS2 before transfer in Comparative Example 1;

[0034] Fig.11 Optical image of MoS2 after transfer with PDMS in Comparative Example 1;

[0035] Fig.12 Optical image of MoS2 before transfer in Comparative Example 2;

[0036] Fig.13 Optical image of MoS2 after transfer with PDMS in Comparative Example 2;

[0037] The present invention is described in detail below with reference to the accompanying drawings and specific implementation methods. DETAILED DESCRIPTION

[0038] The present invention will be further described below in conjunction with the accompanying drawings and specific implementation cases. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms also fall within the scope limited by the appended claims of the application.

[0039] The present invention discloses a non-destructive transfer method of two-dimensional TMDCs based on a flexible substrate, comprising the following steps. Step 1: growing a two-dimensional TMDCs material on a rigid SiO2 / Si substrate; Step 2: forming a uniform water film on the surface to be transferred of the flexible substrate, and fitting the two-dimensional TMDCs material on the rigid SiO2 / Si substrate; Step 3: separating the flexible substrate carrying the water film and the two-dimensional TMDCs material from the rigid SiO2 / Si substrate synchronously along the direction perpendicular to the surface, and drying, so that the two-dimensional TMDCs can be non-destructively transferred to the flexible substrate. The transfer and separation method of the present invention uses deionized water as an intermediary, which not only avoids the pollution problem caused by using chemical substances such as PMMA, organic solvents, glue or adhesive as transfer carriers in the traditional transfer method, but also can form an ultra-clean interface, maintain the high surface quality of the material, and ensure that the electronic properties of the two-dimensional material in subsequent applications are not affected. The entire transfer process is gentle and does not involve high temperature or chemical treatment, ensuring that the original structure and physical and chemical properties of the two-dimensional material are not damaged. In the present invention, synchronous separation along the direction perpendicular to the surface refers to synchronous separation of the flexible substrate and the rigid substrate along the direction perpendicular to the substrate surface. In view of the presence of a layer of water film between the two, the adhesion between them is small, thereby ensuring that the flexible substrate can be easily separated. Protective films are usually attached to both sides of the flexible substrate film. During the transfer process, only one side of the protective film is peeled off, and the other side is retained to maintain the support strength of the material; alternatively, a layer of harder material is attached to the surface of the flexible substrate to enhance its rigidity. During separation, the center of the film can be clamped by tools such as tweezers and lifted in a vertical direction. The thickness of the oxide layer of the rigid SiO2 / Si substrate is 285nm, which means that the material grown by CVD uses a silicon wafer with a thickness of 285 nanometers as a substrate. Specifically, the present invention grows two-dimensional TMDCs on a SiO2 / Si substrate by CVD, and then cuts the flexible substrate film into a size slightly larger than the two-dimensional TMDCs sample to be transferred, and plasma treats it. Deionized water is evenly sprayed on the surface of the treated flexible substrate film to form a thin and uniform water film, and the flexible substrate film with a water film is attached to the target two-dimensional TMDCs sample, and then the film is quickly lifted vertically to achieve non-destructive transfer of two-dimensional TMDCs from the original substrate to the flexible substrate. The water film plays an isolating and buffering role during the transfer process, effectively reducing the direct adhesion between the flexible substrate and the sample or substrate. This transfer method is not only applicable to different types of flexible substrates, but can also transfer multiple types of two-dimensional materials. It is easy to operate, efficient, and fast. The transferred materials have high crystal quality, complete structure, and clean surface, which is conducive to further research on the physical properties of flexible two-dimensional materials and the subsequent preparation of flexible electronic devices based on two-dimensional materials.

[0040] In the present disclosure, the water film is formed by spraying, the aperture of the nozzle is 0.5-0.8 mm, the flow rate is 0.1-0.5 L / min, and the nozzle is kept at a distance of 10-20 cm from the surface of the flexible substrate during spraying. Preferably, the water film is formed by spraying, the aperture of the nozzle is 0.5 mm, the flow rate is 0.1 L / min, and the nozzle is kept at a distance of 15 cm from the surface of the flexible substrate during spraying.

[0041] In the present disclosure, the water droplet diameter of the water film is 10 to 40 μm.

[0042] In the present disclosure, plasma treatment is also performed before forming a water film on the surface to be transferred of the flexible substrate; the plasma treatment conditions include a power of 20 to 100 W, a time of 30 to 300 seconds, a gas type of air or oxygen, and a gas pressure of 10 to 1000 Pa. Preferably, the plasma treatment conditions include a power of 40 W, a time of 60 seconds, a gas type of oxygen, and a gas pressure of 100 Pa.

[0043] In the present disclosure, the drying temperature is 15-30°C, and the drying time is 3-5 minutes. Preferably, the drying temperature is 25°C, and the drying time is 4 minutes.

[0044] In the present disclosure, the area of ​​the transfer surface of the flexible substrate is larger than the area of ​​the growth surface of the SiO2 / Si substrate; the preparation material of the flexible substrate is selected from at least one of polydimethylsiloxane (PDMS), polyimide (PI), polyethylene terephthalate (PET), polyethylene (PE), polyethylene naphthalate (PEN), metal foil, polymethyl methacrylate (PMMA) and polycarbonate (PC).

[0045] In the present disclosure, the oxide layer thickness of the rigid SiO2 / Si substrate is 285 nm; the two-dimensional TMDCs material is prepared by depositing on the SiO2 / Si substrate by chemical vapor deposition.

[0046] The technical scheme of the present invention is described in detail below in conjunction with specific examples and comparative examples. Unless otherwise specified, the raw materials used are commercially available and the methods used are conventional experimental methods in the art.

[0047] Embodiment 1:

[0048] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD.

[0049] (2) Cut the 300 μm thick PDMS film into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that at least 0.5 mm of margin is reserved on each side. Use a plasma treatment device to treat the PDMS film, and the treatment conditions are power 40 W, time 60 seconds, gas type oxygen, and gas pressure 100 Pa.

[0050] (3) Deionized water was evenly sprayed on the treated flexible substrate film surface using a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to form a uniform thin water film. During spraying, the nozzle was kept 15 cm away from the PDMS film surface.

[0051] (4) The PDMS film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PDMS film is lifted vertically and dried at 25°C for 4 minutes to transfer the two-dimensional material MoS2 to the PDMS film without loss.

[0052] Figure 3 and Figure 2 By comparison, it can be clearly seen that MoS2 remains intact without cracks and wrinkles after being transferred to the PDMS substrate, and has high surface cleanliness, which proves the high applicability of the transfer method on the PDMS substrate and is conducive to the subsequent preparation of high-performance flexible electronic devices based on the PDMS substrate.

[0053] Embodiment 2:

[0054] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD.

[0055] (2) Cut the PI film with a thickness of 75 μm into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that at least 0.5 mm of margin is reserved on each side. Use a plasma treatment device to treat the PI film, and the treatment conditions are power 40 W, time 60 seconds, gas type oxygen, and gas pressure 100 Pa.

[0056] (3) Deionized water was evenly sprayed on the surface of the treated flexible substrate film using a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to form a uniform thin water film. During spraying, the nozzle was kept 15 cm away from the surface of the PI film.

[0057] (4) The PI film with water film is adhered to the surface of the two-dimensional TMDCs sample, and then the PI film is lifted vertically and dried at 25°C for 4 minutes to transfer the two-dimensional material MoS2 to the PI film without loss.

[0058] Figure 5 and Figure 4 By comparison, it can be clearly seen that the MoS2 transferred to the PI substrate has the characteristics of complete structure and clean surface. This shows that the transfer method is also applicable to the PI substrate, which can effectively maintain the integrity and cleanliness of the material and ensure that the quality of the two-dimensional material is not affected during the transfer process. This result also shows the great potential of this transfer technology in the preparation of high-quality, PI-based flexible electronic devices.

[0059] Embodiment three:

[0060] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD.

[0061] (2) Cut a 200 μm thick PET film into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that at least 0.5 mm of margin is reserved on each side. Use a plasma treatment device to treat the PET film, and the treatment conditions are power 40 W, time 60 seconds, gas type oxygen, and gas pressure 100 Pa.

[0062] (3) Deionized water was evenly sprayed on the surface of the treated flexible substrate film using a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to form a uniform thin water film. During the spraying, the nozzle was kept at a distance of 15 cm from the surface of the PET film.

[0063] (4) The PET film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PET film is lifted vertically and dried at 25 °C for 4 min. The two-dimensional material MoS2 can be transferred to the PET film without loss.

[0064] Figure 6 and Figure 7 By comparison, it can be clearly seen that the MoS2 after being transferred to the PET substrate maintains structural integrity and surface cleanliness. This shows that the transfer method is also applicable to PET substrates. However, as a flexible substrate, PET may have tiny surface unevenness. When MoS2 is attached, the tiny surface bumps may cause slight wrinkles in the two-dimensional material.

[0065] Embodiment 4:

[0066] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD.

[0067] (2) Cut a 30 μm thick PE film into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that at least 0.5 mm of margin is reserved on each side. Use a plasma treatment device to treat the PE film, and the treatment conditions are power 40 W, time 60 seconds, gas type oxygen, and gas pressure 100 Pa.

[0068] (3) Deionized water was evenly sprayed on the surface of the treated flexible substrate film using a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to form a uniform thin water film. During the spraying, the nozzle was kept at a distance of 15 cm from the surface of the PE film.

[0069] (4) The PE film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PE film is lifted vertically and dried at 25°C for 4 minutes to transfer the two-dimensional material MoS2 to the PE film without loss.

[0070] Fig. 9 and Figure 8 By comparison, it can be clearly observed that the MoS2 transferred to the PE substrate exhibits structural integrity and surface cleanliness. This shows that the transfer method is also applicable to PE substrates, and the water film plays a buffering role during the transfer process, avoiding the appearance of material cracks. However, since the PE film used is relatively thin, the support force for MoS2 is insufficient, resulting in wrinkles on the surface of the material.

[0071] Comparative Example 1:

[0072] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD.

[0073] (2) Cut a 300 μm thick PDMS film into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that at least 0.5 mm of margin is reserved on each side.

[0074] (3) The PDMS film is adhered to the surface of the two-dimensional TMDCs sample, and then the PDMS film is lifted vertically to transfer the two-dimensional material MoS2 to the PDMS film.

[0075] Fig.11 The effect of direct transfer of MoS2 onto PDMS using PMMA without the aid of a water film was demonstrated. Fig.11 and Fig.10 By comparison, it can be seen that obvious cracks appeared on the surface of MoS2 after transfer, and even large areas of damage occurred, and the integrity of the material was seriously damaged. This is because the ultra-thin layered structure of the two-dimensional material is extremely fragile, and even a slight uneven external force can cause it to break. During the transfer process, the adhesion and tearing between PDMS and MoS2 will cause local stress concentration, which may induce the formation of cracks and wrinkles in certain areas of the material. In addition, Fig.11 and Figure 3 By comparison, the water film-assisted transfer method reduces direct contact and excessive adhesion between PDMS and MoS2, avoiding tearing, cracking or wrinkling of the material. In addition, during the bonding process, the water film helps to evenly distribute the pressure and prevent the concentration of local mechanical stress, so that the transferred two-dimensional material can maintain its structural integrity.

[0076] Comparative Example 2:

[0077] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD.

[0078] (2) Cut a 300 μm thick PDMS film into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that at least 0.5 mm of margin is reserved on each side.

[0079] (3) Deionized water was evenly sprayed on the treated flexible substrate film surface using a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to form a uniform thin water film. During spraying, the nozzle was kept 15 cm away from the PDMS film surface.

[0080] (4) The PDMS film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PDMS film is lifted vertically and dried at 25 °C for 4 min to transfer the two-dimensional material MoS2 to the PDMS film.

[0081] Fig.13 The effect of transferring MoS2 onto PDMS by directly spraying deionized water onto the surface of PMMA without plasma treatment was demonstrated. Fig.13 and Fig.12 By comparison, it can be seen that the MoS2 after transfer has serious agglomeration, and some even have wrinkles, which damages the material and makes in-situ transfer impossible. The reason is that the surface of PDMS that has not been treated with plasma is hydrophobic, which makes it difficult for deionized water to spread on it, forming larger droplets. In this case, the material will have gaps or incomplete coverage during the transfer process. At the same time, the material in the droplets tends to agglomerate, and wrinkles may appear during the drying process of the droplets, which ultimately results in an unsatisfactory transfer effect.

[0082] In summary, the method for lossless transfer of two-dimensional materials to flexible substrates provided by the present invention effectively reduces the problems of cracks, breakage, and unclean surface on the surface of the two-dimensional material after transfer. Through the method of the present invention, not only can efficient and rapid transfer be achieved, but also it can be ensured that the two-dimensional material after transfer maintains its original high crystalline quality, complete structure and clean surface state. Since the integrity of the material is well preserved during the transfer process, the method of the present invention provides a reliable and efficient solution for the transfer of two-dimensional materials to flexible substrates. Combined with these advantages, this method provides a solid foundation and broad application prospects for further research on the physical properties of flexible two-dimensional materials and the subsequent preparation of flexible electronic devices based on two-dimensional materials.

[0083] The above are only specific embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for losslessly transferring a two-dimensional material to a flexible substrate, characterized in that: The following steps are involved: Step 1: growing two-dimensional TMDCs materials on a rigid SiO2 / Si substrate; Step 2: A uniform water film is formed on the surface of the flexible substrate to be transferred, which is bonded to the two-dimensional TMDCs material on the rigid SiO2 / Si substrate; Step 3: Separate the flexible substrate carrying the water film and the two-dimensional TMDCs material from the rigid SiO2 / Si substrate synchronously along a direction perpendicular to the surface, and dry them.

2. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 1, characterized in that: The water film is formed by spraying, the aperture of the nozzle is 0.5-0.8 mm, the flow rate is 0.1-0.5 L / min, and the distance between the nozzle and the surface of the flexible substrate is maintained at 10-20 cm during spraying.

3. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 1 or 2, characterized in that: The water film is formed by spraying, the aperture of the nozzle is 0.5 mm, the flow rate is 0.1 L / min, and the distance between the nozzle and the surface of the flexible substrate is maintained at 15 cm during spraying.

4. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 1 or 2, characterized in that: The water droplet diameter of the water film is 10-40 μm.

5. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 1 or 2, characterized in that: Plasma treatment is also performed before a water film is formed on the surface of the flexible substrate to be transferred; The plasma treatment conditions include power of 20 to 100 W, time of 30 to 300 seconds, gas type of air or oxygen, and gas pressure of 10 to 1000 Pa.

6. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 5, characterized in that: The plasma treatment conditions include power of 40W, time of 60 seconds, gas type of oxygen, and gas pressure of 100Pa.

7. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 1 or 2, characterized in that: The drying temperature is 15-30° C., and the drying time is 3-5 minutes.

8. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 7, characterized in that: The drying temperature is 25°C and the drying time is 4 minutes.

9. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 1 or 2, characterized in that: The area of ​​the to-be-transferred surface of the flexible substrate is larger than the area of ​​the growth surface of the SiO2 / Si substrate; The flexible substrate is prepared from at least one material selected from polydimethylsiloxane, polyimide, polyethylene terephthalate, polyethylene, polyethylene naphthalate, metal foil, polymethyl methacrylate and polycarbonate.

10. The method for losslessly transferring a two-dimensional material to a flexible substrate according to claim 1 or 2, characterized in that: The thickness of the oxide layer of the rigid SiO2 / Si substrate is 285nm; The two-dimensional TMDCs material is prepared by depositing on a SiO2 / Si substrate through a chemical vapor deposition method.

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