Strong microcavity anode structure of silicon-based organic light-emitting diode and preparation method
By preparing a strong microcavity anode structure on a CMOS substrate, using the metal reflective layer and transparent metal oxide conductive film on the side wall of the sub-pixel trench, the problem of uneven luminous luminous caused by the traditional anode structure is solved, and more efficient OLED light emission and a more uniform luminous effect are achieved.
Patent Information
- Application Number
- CN202411497734.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-25
- Publication Date
- 2025-03-04
AI Technical Summary
The traditional strong microcavity anode structure emits light through the through holes, resulting in uneven luminous luminance.
A first transparent insulating oxide layer is plated on a CMOS substrate, a sub-pixel groove forming an RGB sub-pixel is processed, an anode metal layer and a second transparent insulating oxide layer are deposited, an anode metal layer and a second transparent insulating oxide layer are etched to the same level as the metal anode, a transparent metal oxide conductive film is deposited and an anode metal pattern is etched, a PDL layer is deposited and a pixel opening, an undercut structure and a light emitting protection structure are etched.
OLED light is reflected through the metal reflective layer on the side wall of the subpixel trench to enhance the OLED light intensity; build an optical resonance strong microcavity with different insulating layer thicknesses of RGB subpixels to improve the efficiency of OLED devices; save subpixel space and improve the pixel opening rate; effectively shield the weaknesses of uneven luminous intensity in the edge area of the OLED device, and improve the luminous uniformity.
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Figure CN119562745A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of silicon-based OLEDs, and in particular to a strong microcavity anode structure of a silicon-based organic light-emitting diode and a preparation method thereof. Background Art
[0002] At present, silicon-based OLED (organic light-emitting diode) display technology has the characteristics of self-luminescence, high contrast, and high response speed, and is widely suitable for application in mobile display products. The traditional R / G / B sub-pixel anode with the same thickness can no longer meet the requirements of high brightness and high color gamut. In order to further improve the efficiency and light color of OLED devices, a device structure with strong microcavity resonance is generally adopted, that is, the anode thickness of R / G / B sub-pixels is different.
[0003] However, common strong microcavity anode structures usually emit light through through holes, which can easily lead to uneven luminous brightness. Summary of the invention
[0004] The present application provides a strong microcavity anode structure of a silicon-based organic light-emitting diode and a preparation method thereof, aiming to improve the above-mentioned problems.
[0005] In a first aspect, the present application provides a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode, comprising:
[0006] Plating a first transparent insulating oxide layer on the CMOS substrate;
[0007] Processing the first transparent insulating oxide layer to obtain sub-pixel grooves corresponding to the RGB sub-pixels respectively, wherein the etching depths of the sub-pixel grooves corresponding to sub-pixels of different colors are different;
[0008] Depositing an anode metal layer in the sub-pixel groove as a metal anode;
[0009] Depositing a second transparent insulating oxide layer on the metal anode;
[0010] Etching the second transparent insulating oxide layer to the same level as the metal anode;
[0011] Depositing a transparent metal oxide conductive film on the etched second transparent insulating oxide layer, and etching the transparent metal oxide conductive film using a photomask to form an anode metal pattern of the RGB sub-pixel;
[0012] Depositing a PDL layer on the CMOS substrate on which the anode metal patterns of the RGB sub-pixels are formed;
[0013] The PDL layer is etched to form a pixel opening, an undercut structure and a pixel light emitting protection structure corresponding to each sub-pixel in the RGB sub-pixels.
[0014] In a possible embodiment, the processing of the first transparent insulating oxide layer to obtain sub-pixel grooves corresponding to RGB sub-pixels respectively includes:
[0015] A half-tone mask is used and coating, exposure, development, etching and degumming are performed in sequence to obtain sub-pixel grooves corresponding to the RGB sub-pixels respectively.
[0016] In a possible embodiment, the depth of the sub-pixel groove corresponding to the R sub-pixel in the RGB sub-pixels is 2600A;
[0017] The depth of the sub-pixel groove corresponding to the G sub-pixel in the RGB sub-pixel is 1800A;
[0018] The depth of the sub-pixel groove corresponding to the B sub-pixel in the RGB sub-pixels is 1100A.
[0019] In a possible embodiment, the first transparent insulating oxide layer includes at least one of SiO 2 or SiN.
[0020] In a possible embodiment, the first transparent insulating oxide layer is SiO2, and the thickness of the first transparent insulating oxide layer is 2000ˉ10000Å.
[0021] In a possible embodiment, the thickness of the first transparent insulating oxide layer is 2000-5000 Å.
[0022] In a possible embodiment, depositing an anode metal layer in the sub-pixel trench as a metal anode includes:
[0023] A first metal, a second metal and a third metal are sequentially deposited in the sub-pixel trench to form an anode metal layer, and the anode metal layer serves as a metal anode.
[0024] In a possible embodiment, the first metal is Ti, and the deposition thickness of the first metal is 150A;
[0025] The second metal is Al, and the deposition thickness of the second metal is 800A;
[0026] The third metal is TiN, and the deposition thickness of the third metal is 50A.
[0027] In a possible embodiment, the second transparent insulating oxide layer is SiO2, and the thickness of the second transparent insulating oxide layer is 1500ˉ5000Å.
[0028] In a possible embodiment, etching the second transparent insulating oxide layer to the same level as the metal anode includes:
[0029] Spin coating a layer of photoresist on the second transparent insulating oxide layer;
[0030] The photoresist and the second transparent insulating oxide layer are etched to the surface of the metal anode outside the sub-pixel groove to obtain a sub-transparent insulating oxide layer at the same level as the metal anode exposed outside the sub-pixel groove.
[0031] In a possible embodiment, the thickness of the photoresist is less than 1 micron.
[0032] In a possible embodiment, depositing a PDL layer on the CMOS substrate on which the anode metal pattern of the RGB sub-pixels is formed includes:
[0033] A third transparent insulating oxide layer, a fourth transparent insulating oxide layer and a fifth transparent insulating oxide layer are sequentially deposited on the CMOS substrate on which the anode metal patterns of the RGB sub-pixels are formed to form a PDL layer.
[0034] In a possible embodiment, the thicknesses of the third transparent insulating oxide layer, the fourth transparent insulating oxide layer and the fifth transparent insulating oxide layer are 200 Å, 650 Å and 200 Å respectively.
[0035] In a possible embodiment, etching the PDL layer to form a pixel opening, an undercut structure, and a pixel light emitting protection structure corresponding to each sub-pixel in the RGB sub-pixels includes:
[0036] Etching the fifth transparent insulating oxide layer and the fourth transparent insulating oxide layer in a region corresponding to each sub-pixel until the third transparent insulating oxide layer is exposed to form a pixel opening;
[0037] Laterally etching the fourth transparent insulating oxide layer to form an undercut structure;
[0038] The third transparent insulating oxide layer is etched to form a pixel light-emitting protection structure, and the etched width of the third transparent insulating oxide layer is smaller than the etched width of the fifth transparent insulating oxide layer.
[0039] In a possible embodiment, the side engraving depth of the undercut structure is 0.05um-0.2um and / or the width of the third transparent insulating oxide layer exposed in the pixel opening is 0.05-0.2um.
[0040] In a second aspect, the present application further provides a strong microcavity anode structure of a silicon-based organic light-emitting diode, wherein the strong microcavity anode structure is prepared by the preparation method described in any one of the first aspects.
[0041] The present application provides a strong microcavity anode structure and preparation method of a silicon-based organic light-emitting diode. The present application comprises the steps of coating a first transparent insulating oxide layer on a CMOS substrate; processing the first transparent insulating oxide layer to obtain sub-pixel grooves corresponding to RGB sub-pixels respectively, wherein the etching depths of the sub-pixel grooves corresponding to sub-pixels of different colors are different; depositing an anode metal layer in the sub-pixel groove as a metal anode; depositing a second transparent insulating oxide layer on the metal anode; etching the second transparent insulating oxide layer to the same level as the metal anode; depositing a transparent metal oxide conductive film on the etched second transparent insulating oxide layer, and etching the transparent metal oxide conductive film using a photomask to form an anode metal pattern of the RGB sub-pixels; depositing a PDL layer on the CMOS substrate on which the anode metal pattern of the RGB sub-pixels is formed; etching the PDL layer to form a pixel opening, an undercut structure and a pixel light-emitting protection structure corresponding to each sub-pixel in the RGB sub-pixels. Therefore, the metal reflective layer on the side wall of the sub-pixel groove is used to reflect OLED light, so as to enhance the light output intensity of OLED. In addition, by etching the second transparent insulating oxide layer to the same level as the metal surface outside the groove, on the one hand, an optically resonant strong microcavity with different insulating layer thicknesses of RGB sub-pixels can be constructed, and on the other hand, the level is conducive to improving the OLED evaporation yield and reducing the risk of cathode fracture, thereby improving the efficiency of OLED devices. Secondly, by overlapping the metal surface outside the sub-pixel groove with a transparent conductive metal oxide film to form a conductive metal ring, sub-pixel space can be saved, which helps to improve the pixel aperture ratio. Finally, by forming an undercut structure and a pixel light-emitting protection structure, the weakness of uneven light-emitting intensity in the edge area of the OLED device can be effectively shielded, thereby improving the light-emitting uniformity of the device. BRIEF DESCRIPTION OF THE DRAWINGS
[0042] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0043] Figure 1 A flow chart of a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode provided in an embodiment of the present application;
[0044] Figure 2 for Figure 1 A schematic diagram of the structure after depositing the first transparent insulating oxide layer in the method for preparing the strong microcavity anode structure of the silicon-based organic light-emitting diode shown;
[0045] Figure 3 for Figure 1 A schematic diagram of the structure after a mask is formed on a first transparent insulating oxide layer in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode;
[0046] Figure 4 for Figure 1 A schematic diagram of the structure after forming a sub-pixel groove in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode;
[0047] Figure 5 for Figure 1 A schematic diagram of the structure after depositing an anode metal layer in a sub-pixel groove in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode;
[0048] Figure 6 for Figure 1 A schematic diagram of the structure after depositing a second transparent insulating oxide layer after depositing an anode metal layer in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode is shown;
[0049] Figure 7 for Figure 1 A schematic diagram of the structure after spin coating photoresist on the second transparent insulating oxide layer in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode is shown;
[0050] Figure 8 for Figure 1 A schematic diagram of the structure after etching the second transparent insulating oxide layer in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode is shown;
[0051] Fig. 9 for Figure 1 A schematic diagram of the structure after depositing a transparent metal oxide conductive film in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode is shown;
[0052] Fig.10 for Figure 1 A schematic diagram of the process of forming an anode metal pattern in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode is shown;
[0053] Fig.11 for Figure 1 A schematic diagram of the structure after depositing a PDL layer in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode is shown;
[0054] Fig.12 for Figure 1 A schematic diagram of the process of etching the PDL layer in a method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode is shown. DETAILED DESCRIPTION
[0055] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution of the present application will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present application.
[0056] Example
[0057] See also Figure 1 A method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode is shown, and the method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode comprises:
[0058] Step S201, coating a first transparent insulating oxide layer on a CMOS substrate.
[0059] It is understandable that a CMOS (Complementary Metal Oxide Semiconductor) substrate is pre-prepared with a CMOS driving circuit.
[0060] For example, Figure 2 As shown, a first transparent insulating oxide layer 120 is deposited on a CMOS substrate 110 (or a silicon-based chip).
[0061] Optionally, the first transparent insulating oxide layer 120 includes at least one of SiO 2 or SiN.
[0062] Of course, it can also be a combination layer of silicon nitride and silicon oxygen, which is not specifically limited here.
[0063] Optionally, the first transparent insulating oxide layer 120 is SiO2, and the thickness of the first transparent insulating oxide layer 120 is 2000ˉ10000Å.
[0064] Optionally, the thickness of the first transparent insulating oxide layer 120 is 2000-5000 Å.
[0065] Step S202: Process the first transparent insulating oxide layer to obtain sub-pixel grooves corresponding to the RGB sub-pixels respectively.
[0066] The etching depths of the sub-pixel grooves corresponding to sub-pixels of different colors are different.
[0067] That is, the etching depths of the sub-pixel grooves corresponding to the R sub-pixel, the G sub-pixel, and the B sub-pixel are different.
[0068] As an implementation mode, step S202 includes: using a half-tone mask and sequentially performing coating, exposure, development, etching and degumming to obtain sub-pixel grooves corresponding to the RGB sub-pixels respectively.
[0069] For example, Figure 3 As shown, a mask 130 is formed by coating, exposing, and developing the first transparent insulating oxide layer with photoresist.
[0070] For example, Figure 4 As shown, the mask 130 is used for etching to form a sub-pixel trench 121 corresponding to the R sub-pixel, a sub-pixel trench 123 corresponding to the G sub-pixel, and a sub-pixel trench 125 corresponding to the B sub-pixel, and finally the mask 130 is removed.
[0071] Optionally, the depth of the sub-pixel groove 121 is 2600A, the depth of the sub-pixel groove 123 is 1800A, and the depth of the sub-pixel groove 125 is 1100A.
[0072] Step S203 , depositing an anode metal layer in the sub-pixel trench as a metal anode.
[0073] As an implementation manner, step S203 includes: depositing a first metal, a second metal and a third metal in sequence in the sub-pixel trench to form an anode metal layer, and the anode metal layer serves as a metal anode.
[0074] Optionally, the first metal is Ti, and the deposition thickness of the first metal is 150A;
[0075] The second metal is Al, and the deposition thickness of the second metal is 800A;
[0076] The third metal is TiN, and the deposition thickness of the third metal is 50A.
[0077] Of course, in actual use, a single layer or multiple layers of metal such as Al / Ag can also be used as the anode conductive reflective film, and no specific limitation is made here.
[0078] For example, Figure 5 As shown, a first metal, a second metal and a third metal are sequentially deposited in the sub-pixel trench 121 , the sub-pixel trench 123 and the sub-pixel trench 125 to form an anode metal layer, and the anode metal layer serves as a metal anode 140 .
[0079] Step S204: depositing a second transparent insulating oxide layer on the metal anode.
[0080] Optionally, the second transparent insulating oxide layer 150 is SiO2, and the thickness of the second transparent insulating oxide layer 150 is 1500ˉ5000Å.
[0081] Optionally, the second transparent insulating oxide layer 150 has a thickness of 2000 Å.
[0082] It can be understood that by designing the thickness of the second transparent insulating oxide layer 150 to be 2000A, its thickness can not only match the thickness of the sub-pixel strong microcavity, but also enable the second transparent insulating oxide layer 150 in the sub-pixel to be at the same level as the metal anode exposed outside the sub-pixel groove when etching to the upper surface of the metal anode.
[0083] For example, Figure 6 As shown, after the anode metal layer (ie, the metal anode 140 ) is deposited, the second transparent insulating oxide layer 150 is deposited.
[0084] Step S205, etching the second transparent insulating oxide layer to the same level as the metal anode.
[0085] As an embodiment, step S205 includes: spin coating a layer of photoresist on the second transparent insulating oxide layer; etching the photoresist and the second transparent insulating oxide layer to the surface of the metal anode outside the sub-pixel groove to obtain a sub-transparent insulating oxide layer at the same level as the metal anode exposed outside the sub-pixel groove.
[0086] For example, Figure 7 As shown, in Figure 6 A layer of photoresist (PR glue) 160 is spin-coated on the basis of the thickness of less than 1um, preferably in the range of 3000A-8000A, and preferably 5000A in this example; Figure 8 As shown, in Figure 7 On the basis of the above, the PR glue and the second transparent insulating oxide layer 150 under the PR glue are etched together to the surface of the metal anode 140 outside the sub-pixel groove by etching.
[0087] Step S206 , depositing a transparent metal oxide conductive film on the etched second transparent insulating oxide layer, and etching the transparent metal oxide conductive film using a photomask to form anode metal patterns of the RGB sub-pixels.
[0088] Optionally, the transparent metal oxide conductive film is ITO (indium tin oxide).
[0089] Optionally, the transparent metal oxide conductive film has a thickness of 100 Å.
[0090] For example, Fig. 9 As shown, in Figure 8 The transparent metal oxide conductive film 170 is deposited on the basis of.
[0091] For example, Fig.10 As shown, in Fig. 9 On the basis of the photoresist, a photoresist is spin-coated and developed to form a mask, and the mask is used for etching to expose a portion of the first transparent insulating oxide layer 120.
[0092] It should be understood that the exposed portion of the first transparent insulating oxide layer 120 is the portion outside the sub-pixel groove. The first transparent insulating oxide layer 120 in the region corresponding to the RGB sub-pixel will not be exposed.
[0093] Step S207 , depositing a PDL layer on the CMOS substrate on which the anode metal patterns of the RGB sub-pixels are formed.
[0094] As an implementation manner, step S207 includes: sequentially depositing a third transparent insulating oxide layer, a fourth transparent insulating oxide layer and a fifth transparent insulating oxide layer on the CMOS substrate having the anode metal pattern of the RGB sub-pixels formed thereon to form a PDL layer.
[0095] Optionally, the third transparent insulating oxide layer and the fifth transparent insulating oxide layer are both SiO.
[0096] Optionally, the fourth transparent insulating oxide layer is SiN.
[0097] Optionally, the thicknesses of the third transparent insulating oxide layer, the fourth transparent insulating oxide layer and the fifth transparent insulating oxide layer are 200 Å, 650 Å and 200 Å respectively.
[0098] For example, Fig.11 As shown, in Fig.10 A third transparent insulating oxide layer 180 , a fourth transparent insulating oxide layer 190 and a fifth transparent insulating oxide layer 200 are deposited on the basis of the obtained structure to form a “sandwich” structure of the PDL layer.
[0099] Step S208 , etching the PDL layer to form a pixel opening, an undercut structure, and a pixel light-emitting protection structure corresponding to each sub-pixel in the RGB sub-pixels.
[0100] As an embodiment, step S208 includes: etching the fifth transparent insulating oxide layer and the fourth transparent insulating oxide layer in the corresponding area of each sub-pixel until the third transparent insulating oxide layer is exposed to form a pixel opening; laterally etching the fourth transparent insulating oxide layer to form an undercut structure; etching the third transparent insulating oxide layer to form a pixel light-emitting protection structure, and the etching width of the third transparent insulating oxide layer is smaller than the etching width of the fifth transparent insulating oxide layer.
[0101] Optionally, the side engraving depth of the undercut structure is 0.05um-0.2um and / or the width of the third transparent insulating oxide layer exposed in the pixel opening is 0.05-0.2um.
[0102] Optionally, the undercut structure has a side engraving depth of 0.1-0.12 um.
[0103] Optionally, the third transparent insulating oxide layer is exposed in the pixel opening to a width of 0.05-0.1 um.
[0104] For example, Fig.12 As shown, in Fig.11 On the basis of the above, photoresist coating, exposure and development are performed respectively, and then the required anode structure is made by etching, degumming and other means. Specifically, the PDL pixel is first etched to form a pixel opening 210, and the end point stops on the third transparent insulating oxide layer 180, and then the process is adjusted to perform lateral etching to form an undercut structure 220. The side engraving depth d1 of the undercut structure 220 is 0.05um-0.2um, preferably d1 is 0.1-0.12um, and the undercut structure 220 plays a role in cutting off the lateral current of the OLED to prevent color mixing; the fifth transparent insulating oxide layer 200 is etched to form a pixel light-emitting protection structure 230, and the distance d2 between the fifth transparent insulating oxide layer 200 and the third transparent insulating oxide layer 180 at the edge position is 0.05-0.2um, preferably, d2 is 0.05ˉ0.1um, which can shield the light emission of the edge OLED, so that the OLED device improves the problem of uneven light emission brightness.
[0105] It should be noted that, in this embodiment, all masks are formed of photoresist.
[0106] Based on the same inventive concept, this embodiment also provides a strong microcavity anode structure of a silicon-based organic light-emitting diode, and the strong microcavity anode structure is prepared by the preparation method described above.
[0107] In summary, the present application provides a strong microcavity anode structure and a preparation method for a silicon-based organic light-emitting diode. The present application comprises the steps of coating a first transparent insulating oxide layer on a CMOS substrate; processing the first transparent insulating oxide layer to obtain sub-pixel grooves corresponding to RGB sub-pixels respectively, wherein the etching depths of the sub-pixel grooves corresponding to sub-pixels of different colors are different; depositing an anode metal layer in the sub-pixel groove as a metal anode; depositing a second transparent insulating oxide layer on the metal anode; etching the second transparent insulating oxide layer to the same level as the metal anode; depositing a transparent metal oxide conductive film on the etched second transparent insulating oxide layer, and etching the transparent metal oxide conductive film using a mask to form an anode metal pattern of the RGB sub-pixels; depositing a PDL layer on the CMOS substrate on which the anode metal pattern of the RGB sub-pixels is formed; and etching the PDL layer to form a pixel opening, an undercut structure and a pixel light-emitting protection structure corresponding to each sub-pixel in the RGB sub-pixels. Therefore, the metal reflective layer on the side wall of the sub-pixel groove is used to reflect OLED light, so as to enhance the light output intensity of OLED. In addition, by etching the second transparent insulating oxide layer to the same level as the metal surface outside the groove, on the one hand, an optically resonant strong microcavity with different insulating layer thicknesses of RGB sub-pixels can be constructed, and on the other hand, the level is conducive to improving the OLED evaporation yield and reducing the risk of cathode fracture, thereby improving the efficiency of OLED devices. Secondly, by overlapping the metal surface outside the sub-pixel groove with a transparent conductive metal oxide film to form a conductive metal ring, sub-pixel space can be saved, which helps to improve the pixel aperture ratio. Finally, by forming an undercut structure and a pixel light-emitting protection structure, the weakness of uneven light-emitting intensity in the edge area of the OLED device can be effectively shielded, thereby improving the light-emitting uniformity of the device.
[0108] It should be understood that the term "and / or" in this article is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. A and B can be singular or plural. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship, but it may also indicate an "and / or" relationship. Please refer to the context for specific understanding.
[0109] In this application, "at least one" means one or more, and "more than one" means two or more. "At least one of the following" or similar expressions refers to any combination of these items, including any combination of single or plural items. For example, at least one of a, b, or c can be represented by: a, b, c, ab, ac, bc, or abc, where a, b, c can be single or multiple.
[0110] It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application.
[0111] Those of ordinary skill in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of this application.
[0112] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.
[0113] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application. It should be noted that similar numbers and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.
Claims
1. A method for preparing a strong microcavity anode structure of a silicon-based organic light-emitting diode, characterized in that: include: Plating a first transparent insulating oxide layer on the CMOS substrate; Processing the first transparent insulating oxide layer to obtain sub-pixel grooves corresponding to the RGB sub-pixels respectively, wherein the etching depths of the sub-pixel grooves corresponding to sub-pixels of different colors are different; Depositing an anode metal layer in the sub-pixel groove as a metal anode; Depositing a second transparent insulating oxide layer on the metal anode; Etching the second transparent insulating oxide layer to the same level as the metal anode; Depositing a transparent metal oxide conductive film on the etched second transparent insulating oxide layer, and etching the transparent metal oxide conductive film using a photomask to form an anode metal pattern of the RGB sub-pixel; Depositing a PDL layer on the CMOS substrate on which the anode metal patterns of the RGB sub-pixels are formed; The PDL layer is etched to form a pixel opening, an undercut structure and a pixel light emitting protection structure corresponding to each sub-pixel in the RGB sub-pixels.
2. The preparation method according to claim 1, characterized in that: The step of processing the first transparent insulating oxide layer to obtain sub-pixel grooves corresponding to the RGB sub-pixels respectively includes: A half-tone mask is used and coating, exposure, development, etching and degumming are performed in sequence to obtain sub-pixel grooves corresponding to the RGB sub-pixels respectively.
3. The preparation method according to claim 2, characterized in that: The depth of the sub-pixel groove corresponding to the R sub-pixel in the RGB sub-pixels is 2600A; The depth of the sub-pixel groove corresponding to the G sub-pixel in the RGB sub-pixel is 1800A; The depth of the sub-pixel groove corresponding to the B sub-pixel in the RGB sub-pixels is 1100A.
4. The preparation method according to claim 1, characterized in that: The first transparent insulating oxide layer includes at least one of SiO2 or SiN.
5. The preparation method according to claim 4, characterized in that: The first transparent insulating oxide layer is SiO2, and the thickness of the first transparent insulating oxide layer is 2000-10000 Å.
6. The preparation method according to claim 5, characterized in that: The thickness of the first transparent insulating oxide layer is 2000ˉ5000Å.
7. The preparation method according to claim 1, characterized in that: The step of depositing an anode metal layer in the sub-pixel groove as a metal anode comprises: A first metal, a second metal and a third metal are sequentially deposited in the sub-pixel trench to form an anode metal layer, and the anode metal layer serves as a metal anode.
8. The preparation method according to claim 7, characterized in that: The first metal is Ti, and the deposition thickness of the first metal is 150A; The second metal is Al, and the deposition thickness of the second metal is 800A; The third metal is TiN, and the deposition thickness of the third metal is 50A.
9. The preparation method according to claim 1, characterized in that: The second transparent insulating oxide layer is SiO2, and the thickness of the second transparent insulating oxide layer is 1500-5000 Å.
10. The preparation method according to claim 9, characterized in that: The etching of the second transparent insulating oxide layer to the same level as the metal anode comprises: Spin coating a layer of photoresist on the second transparent insulating oxide layer; The photoresist and the second transparent insulating oxide layer are etched to the surface of the metal anode outside the sub-pixel groove to obtain a sub-transparent insulating oxide layer at the same level as the metal anode exposed outside the sub-pixel groove.
11. The preparation method according to claim 10, characterized in that: The thickness of the photoresist is less than 1 micron.
12. The preparation method according to claim 1, characterized in that: The method of depositing a PDL layer on the CMOS substrate on which the anode metal pattern of the RGB sub-pixels is formed comprises: A third transparent insulating oxide layer, a fourth transparent insulating oxide layer and a fifth transparent insulating oxide layer are sequentially deposited on the CMOS substrate on which the anode metal patterns of the RGB sub-pixels are formed to form a PDL layer.
13. The preparation method according to claim 12, characterized in that: The thicknesses of the third transparent insulating oxide layer, the fourth transparent insulating oxide layer and the fifth transparent insulating oxide layer are 200 Å, 650 Å and 200 Å respectively.
14. The preparation method according to claim 12 or 13, characterized in that: The etching of the PDL layer to form a pixel opening, an undercut structure and a pixel light emitting protection structure corresponding to each sub-pixel in the RGB sub-pixel includes: Etching the fifth transparent insulating oxide layer and the fourth transparent insulating oxide layer in a region corresponding to each sub-pixel until the third transparent insulating oxide layer is exposed to form a pixel opening; Laterally etching the fourth transparent insulating oxide layer to form an undercut structure; The third transparent insulating oxide layer is etched to form a pixel light-emitting protection structure, and the etched width of the third transparent insulating oxide layer is smaller than the etched width of the fifth transparent insulating oxide layer.
15. The preparation method according to claim 14, characterized in that: The side engraving depth of the undercut structure is 0.05um-0.2um and / or the width of the third transparent insulating oxide layer exposed in the pixel opening is 0.05-0.2um.
16. A strong microcavity anode structure of a silicon-based organic light-emitting diode, characterized in that: Prepared by the preparation method according to any one of claims 1 to 15.