High-pressure substrate processing apparatus

Abstract

The present invention provides a high-pressure substrate processing apparatus, comprising: an inner chamber formed to accommodate a substrate to be processed; an outer chamber provided with a hollow case and a partition plate disposed so as to partition the case into a high-temperature region in which the inner chamber is accommodated and a low-temperature region in which the temperature is lower than the high-temperature region; a gas supply module that supplies a reaction gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure, and supplies a shielding gas to a space between the outer chamber and the inner chamber at a second pressure set with respect to the first pressure; an exhaust module which is configured so as to communicate with the inner chamber, is provided with an exhaust pipe passing through the low-temperature region, and discharges a mixed gas containing the reaction gas and a by-product generated by the treatment; and a collection module configured so as to be disposed in the low-temperature region in a state of communicating with the exhaust pipe, and configured so as to collect the by-product in the mixed gas.

Description

Technical Field

[0001] The invention relates to a processing device for processing a substrate in a high-pressure environment. Background Art

[0002] Generally, in the process of manufacturing semiconductor devices, various processes are performed on the semiconductor substrate. Examples of such processes include oxidation, nitridation, silicidation, ion implantation, and deposition processes. There is also a hydrogen or deuterium heat treatment process for improving the interface characteristics of the semiconductor device.

[0003] The gas used for the process is supplied into the chamber and acts on the semiconductor substrate. During such action, the semiconductor substrate releases byproducts such as particles.

[0004] During the exhaust phase of the process, the by-products are discharged mixed with the gases used in the process. The by-products are gaseous in the hot environment but solidify during and after leaving the process equipment.

[0005] Solidified by-products accumulate on the inner walls of exhaust pipes, exhaust valves, other scrubbers or vacuum pumps. These will block the flow paths in pipelines and various devices and cause problems. The scope of the problem may be a considerable section along the movement path of gases and by-products.

[0006] In response to this problem, devices for capturing byproducts, such as cold traps, are being used. Cold traps capture byproducts by cooling the exhaust gas, and the cooling performance determines the byproduct capture efficiency. Traditionally, cold traps are installed right in front of the scrubber to solve the problem of the flow path between the scrubber and the vacuum pump being blocked. Summary of the invention

[0007] Technical issues

[0008] An object of the present invention is to provide a high-voltage substrate processing apparatus capable of removing by-products from a chamber to prevent adverse effects caused by the by-products from extending outside the chamber.

[0009] Another object of the present invention is to provide a high-pressure substrate processing apparatus that does not require a high-level high-pressure design even if a by-product capture module is used for high-pressure processing of a substrate.

[0010] Solutions to the problem

[0011] In order to achieve the above-mentioned problem, a high-pressure substrate processing device according to one aspect of the present invention may include: an inner chamber formed to accommodate a substrate to be processed; an outer chamber having a hollow shell and a partition, wherein the partition is configured to separate the shell into a high-temperature zone accommodating the inner chamber and a low-temperature zone having a temperature lower than the high-temperature zone; a gas supply module, which supplies a reaction gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure, and supplies a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure; an exhaust module, which is configured to be connected to the inner chamber and has an exhaust pipe passing through the low-temperature zone, for discharging a mixed gas containing the reaction gas and by-products generated according to the processing; and a capture module, which is configured to be arranged in the low-temperature zone in a state of being connected to the exhaust pipe, so as to capture the by-products in the mixed gas.

[0012] Here, the exhaust module may further include a gas discharger formed to be disposed on the exhaust pipe in a manner to be located outside the outer chamber and to adjust the mixed gas to be discharged to the outside through the capture module, and the capture module may be located in front of the gas discharger.

[0013] Here, a cooling water supply module including a cooling water supply pipe may be further included, and the collection module may be configured such that the mixed gas is cooled by cooling water flowing along the cooling water supply pipe to convert the by-product into powder.

[0014] Here, the capture module may include: a pair of exhaust pipe connection parts detachably connected to the exhaust pipe; and a pair of cooling water supply pipe connection parts detachably connected to the cooling water supply pipe.

[0015] Here, the pair of exhaust pipe connection portions may be arranged along an extending direction of the exhaust pipe, and the pair of cooling water supply pipe connection portions may be arranged along a crossing direction crossing the extending direction.

[0016] Here, the cooling water supply module may supply cooling water to one of the housing and the partition plate to cool the low temperature area.

[0017] Here, it can also include: a sensing module, which has a temperature sensor for measuring the temperature of the exhaust pipe; and a control module, which is connected to the temperature sensor and the cooling water supply module, and the control module adjusts the temperature of the cooling water according to the temperature of the exhaust pipe obtained from the temperature sensor.

[0018] Here, the cooling water supply module may further include a cooler configured to cool the cooling water, and the control module may operate the cooler to reduce the temperature of the cooling water.

[0019] Here, it can also include: a sensing module, which has a pressure sensor at the rear end of the capture module to measure the pressure of the exhaust pipe; and a control module, which is connected to the pressure sensor, and the control module can output the replacement period of the capture module according to the pressure of the exhaust pipe obtained from the pressure sensor.

[0020] According to another aspect of the present invention, a high-pressure substrate processing device may include: an inner chamber formed to accommodate a substrate to be processed; an outer chamber having a hollow shell for accommodating the inner chamber; a gas supply module configured to supply a reaction gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure, and to supply a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure; an exhaust module configured to have an exhaust pipe connected to the inner chamber, and to discharge a mixed gas including the reaction gas and by-products generated according to the processing to the outside of the outer chamber; and a capture module configured to be arranged in the outer chamber in a state connected to the exhaust pipe, the outside of the outer chamber is exposed to the second pressure through the protective gas, and the inside of the outer chamber is exposed to the first pressure through the reaction gas, so that the by-products in the mixed gas are captured.

[0021] Here, the difference between the first pressure and the second pressure may be 2 ATM or less.

[0022] Here, the exhaust module may further include a gas discharger formed to be disposed at the exhaust pipe for adjusting the discharge of the mixed gas, and the capture module may be located in front of the gas discharger.

[0023] Here, a heating module may be further included, which is formed to heat the reaction gas to process the substrate, and the outer chamber may also include a partition, which separates the shell into a high temperature zone accommodating the inner cavity and the heating module and a low temperature zone with a temperature lower than the high temperature zone, and the low temperature zone is filled with cold air.

[0024] Here, a cooling water supply module may also be included, and the capture module may be constructed so that the mixed gas is cooled by cooling water supplied by the cooling water supply module, so that the by-product becomes powder, and the low-temperature zone generates the cold air by cooling water supplied by the cooling water supply module to one of the shell and the partition.

[0025] Effects of the Invention

[0026] According to the high-pressure substrate processing apparatus of the present invention constructed as described above, when the gas in the inner chamber is discharged while supplying the gas of the first pressure or the second pressure to the inner chamber for accommodating the substrate and the outer chamber surrounding the inner chamber, since the capture module is installed in the exhaust pipe of the outer chamber for operation, the problems caused by the by-products will not extend outside the outer chamber.

[0027] Since the capture module is connected to the inner chamber and its interior is exposed to the first pressure and its exterior is exposed to the second pressure set in a predetermined relationship with the first pressure, even if the substrate is subjected to high pressure processing, a high-level high-pressure design of the capture module is not required.

[0028] Since the capture module is disposed in the low temperature region different from the high temperature region in the outer chamber, the capture module can more effectively cool the gas exhausted from the inner chamber, thereby more effectively capturing the by-products. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a conceptual diagram of a high voltage substrate processing apparatus 100 according to an embodiment of the present invention.

[0030] Figure 2 It is shown Figure 1 A partial cross-sectional view of the specific relationship between the chambers 110, 120 and the capture module 150.

[0031] Figure 3 It is shown Figure 1 A conceptual diagram of the connection relationship between the capture module 150, the cooling water supply module 170 and the sensing module 180.

[0032] Figure 4 It shows Figure 1 A block diagram of a control structure of a high-voltage substrate processing apparatus 100 is shown.

[0033] Figure 5 It is shown Figure 1 A perspective view of the structure of the capture module 150. DETAILED DESCRIPTION

[0034] Hereinafter, a high voltage substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In this specification, even in different embodiments, the same or similar components are marked with the same or similar reference numerals, and the first description is substituted for the description thereof.

[0035] Figure 1 is a conceptual diagram of a high voltage substrate processing apparatus 100 according to an embodiment of the present invention.

[0036] Reference Figure 1The high-pressure substrate processing apparatus 100 may include an inner chamber 110 , an outer chamber 120 , a gas supply module 130 , an exhaust module 140 and a capture module 150 .

[0037] The inner chamber 110 forms a reaction space for accommodating an object to be processed. The inner chamber 110 can be made of non-metallic materials, such as quartz, to reduce contamination in a high-temperature and high-pressure working environment. Although simplified in the figure, a door for opening the reaction space is provided at the lower end of the inner chamber 110. When the door is lowered, the reaction space is opened, and the object can be put into the inner chamber 110 in a state of being mounted in a holder (omitted from the figure). The object can be, for example, a semiconductor substrate. In this case, the holder can be a wafer boat capable of stacking multiple layers of the semiconductor substrate.

[0038] The outer chamber 120 is configured to surround the entire inner chamber 110. Unlike the inner chamber 110, the outer chamber 120 can be made of a metal material because it is not subject to contamination problems. The outer chamber 120 has a hollow housing 121 having an inner space for accommodating the inner chamber 110. The housing 121 is also provided with a door at the lower portion, and can be opened together with the door when the door of the inner chamber 110 is opened.

[0039] The gas supply module 130 is a structure for supplying gas to the inner chamber 110 and the outer chamber 120. The gas supply module 130 has a gas supplier 131 as a gas source. The gas supplier 131 can selectively supply, for example, hydrogen / deuterium, fluorine, ammonia, chlorine, nitrogen, etc. as a reaction gas to the inner chamber 110. The gas supplier 131 can supply, for example, nitrogen, which is an inert gas, as a protective gas to the outer chamber 120. These reaction gases and protective gases are supplied to the inner chamber 110 or the outer chamber 120 through a reaction gas pipeline 133 or a protective gas pipeline 135, respectively. The protective gas supplied to the outer chamber 120 specifically fills the space between the outer chamber 120 and the inner chamber 110.

[0040] The reaction gas and the shielding gas can be supplied at a high pressure higher than the atmospheric pressure to form a high pressure of, for example, several atmospheres to tens of atmospheres. When the pressure of the reaction gas is a first pressure and the pressure of the shielding gas is a second pressure, these can be maintained in a set relationship (range). For example, the second pressure can be set to be slightly higher than the first pressure. The pressure difference can be, for example, less than 2ATM. The pressure difference provides the advantage that the reaction gas will not leak from the inner chamber 110.

[0041] The exhaust module 140 is a structure for discharging the reaction gas and the protective gas. First, in order to discharge the reaction gas from the inner chamber 110, an exhaust pipe 141 is connected to the inner chamber 110. The exhaust pipe 141 can be connected to the upper part of the inner chamber 110 and extend outside the outer chamber 120. A gas discharger 143 can be provided in the exhaust pipe 141. The gas discharger 143 can be an exhaust valve for adjusting the discharge of the reaction gas. By operating the gas discharger 143, the first pressure can be maintained or adjusted to a low level. The by-products generated when the substrate is processed will be mixed in the reaction gas. Since the reaction gas and the by-products are mixed, they can be collectively referred to as a mixed gas.

[0042] In order to discharge the protective gas from the outer chamber 120, similarly, an exhaust pipe 145 communicating with the outer chamber 120 and a gas discharger 147 installed at the exhaust pipe may be provided. Since these exhaust pipes 141 and 145 are connected, the reaction gas is diluted in the protective gas and its concentration is reduced.

[0043] The capture module 150 is a structure for capturing the byproducts from the mixed gas flowing along the exhaust pipe 141. The capture module 150 is disposed in the outer chamber 120 in communication with the exhaust pipe 141. The capture module 150 is located in front of the gas discharger 143 on the exhaust pipe 141 along the exhaust direction.

[0044] According to the structure, since the capture module 150 is located in the outer chamber 120, the byproducts are captured in the outer chamber 120. As a result, the byproducts do not pass through the outer chamber 120 to adversely affect the next part of the capture module 150 in the exhaust pipe 141, the gas discharger 143, and other related devices such as scrubbers.

[0045] The gas discharger 143 is a structure for discharging the reaction gas from the inner chamber 110 to adjust, mainly reduce, the first pressure. The adjustment of the first pressure is accompanied by the adjustment of the second pressure having a set relationship therewith. Since the by-products are not mixed in the protective gas, the operation of the gas discharger 147 for adjusting the second pressure will not be adversely affected by the by-products. Therefore, the gas discharger 143 for adjusting the first pressure must operate normally in a state where it is not adversely affected by the by-products. For this reason, the capture module 150 is located in front of the gas discharger 143. The normal operation of the gas discharger 143 under the influence of the capture module 150 is of great significance not only for the adjustment of the first pressure, but also for the adjustment of the second pressure related to the first pressure.

[0046] Since the capture module 150 is connected to the internal chamber 110 through the exhaust pipe 141, the interior thereof is exposed to the first pressure. The exterior of the capture module 150 is exposed to the second pressure through the protective gas. Since the second pressure maintains a set relationship with the first pressure, the pressure difference between the two is not large. Even if the first pressure reaches tens of atmospheric pressures, since the capture module 150 is exposed to the pressure difference instead of the first pressure, it is not necessary to have a high-pressure design corresponding to tens of atmospheric pressures.

[0047] Figure 2 It is shown Figure 1 A partial cross-sectional view of the specific relationship between chambers 110 and 120 and capture module 150.

[0048] Reference Figure 2 , the housing 121 of the outer chamber 120 may include a body portion 121a and a cover portion 121b. If the body portion 121a has a substantially cylindrical shape, the cover portion 121b may have a shape corresponding to the open top of the body portion 121a. The cover portion 121b may have a substantially dome shape.

[0049] The space defined by the shell 121, that is, the internal space, may be divided into two regions by the partition 125. The partition 125 may be provided on the lower side of the cover 121b while being supported by the main body 121a. The partition 125 may define a high temperature zone 123 together with the main body 121a, and define a low temperature zone 127 together with the cover 121b. The high temperature zone 123 and the low temperature zone 127 are connected through a connecting hole (not shown) formed in the partition 125, and may have the same pressure (the second pressure) therebetween.

[0050] In addition to the inner chamber 110, a heating module 160 is also provided in the high temperature zone 123. The heating module 160 may include a heater 161 and an insulating block 165. The heater 161 may have a shape surrounding the inner chamber 110. The protective gas in the high temperature zone 123 and the reaction gas in the inner chamber 110 may be heated by the heat generated by the heater 161. Due to the operation of the heater 161, the temperature of the reaction gas may reach hundreds to one thousand degrees Celsius. The insulating block 165 has the heater 161 built in and prevents the heat from the heater 161 from being transferred to the main body 121a side.

[0051] Corresponding to the heater 161, a heat insulating layer 125a may be provided at the lower portion of the partition 125. The heat insulating layer 125a may be disposed above the heating module 160 to face the heater 161. The heat insulating layer 125a is used to prevent heat generated from the heater 161 from being transferred to the low temperature area 127.

[0052] A cooling layer 125b may be provided on the upper portion of the partition 125. The cooling layer 125b may have a space for accommodating a cooling medium such as cooling water. Corresponding to the cooling layer 125b, a space for accommodating cooling water may also be provided on the cover 121b. The cover 121b may accommodate a larger amount of cooling water than the partition 125.

[0053] The cooling water contained in the cover 121b and / or the cooling layer 125b fills the low temperature zone 127 with cold air. Thus, the temperature of the low temperature zone 127 can be kept much lower than the temperature of the high temperature zone 125, for example, less than one tenth of the temperature of the high temperature zone 123.

[0054] The capture module 150 may be installed in the exhaust pipe 141 passing through the low temperature zone 127 while being located in the low temperature zone 127. The capture module 150 and the gas of the reaction gas staying in the exhaust pipe 141 and the capture module 150 are affected by the cold air.

[0055] According to the above structure, the mixed gas flows from the high temperature zone 123 to the low temperature zone 127 and passes through the capture module 150. Thus, the mixed gas can pass through the capture module 150 at a temperature much cooler than the high temperature when the substrate is processed. The low temperature zone 127 is used to improve the cooling performance of the capture module 150 by preliminary or preemptive cooling of the mixed gas. As a result, the cooling load on the capture module 150 is reduced or the cooling efficiency of the capture module 150 is improved. The capture efficiency of the capture module 150 can also be improved.

[0056] Below, refer to Figure 3 The connection relationship between the capture module 150 and peripheral components will be described. Figure 3 It is shown Figure 1 A conceptual diagram of the connection relationship between the capture module 150, the cooling water supply module 170 and the sensing module 180.

[0057] Reference Figure 3 As described above, the capture module 150 is connected to the exhaust pipe 141. The capture module 150 is also connected to the cooling water supply pipe 171 of the cooling water supply module 170.

[0058] The cooling water supply module 170 supplies cooling water to the structures other than the collection module 150 through the cooling water supply pipe 171 and other supply pipes (not shown). Figure 2 ) is also supplied with cooling water by the cooling water supply module 170.

[0059] The cooling water flowing in the cooling water supply pipe 171 cools the mixed gas flowing in the capture module 150. The byproduct exists in the form of gas under high temperature environment and solidifies into powder after cooling. The powder accumulates in the capture module 150 and does not escape from the outer chamber 120.

[0060] In order to effectively operate the capture module 150 and determine the replacement time, a sensing module 180 for acquiring information related to the capture module 150 may be introduced. As the sensing module 180, a temperature sensor 181 and a pressure sensor 185 may be used.

[0061] The temperature sensor 181 is used to measure the temperature of the exhaust pipe 141. Since the temperature sensor 181 is located at the upstream side of the capture module 150, it can measure the temperature of the mixed gas flowing into the exhaust pipe 141.

[0062] The pressure sensor 185 is used to measure the pressure of the exhaust pipe 141. Since the pressure sensor 185 is located downstream of the capture module 150, it is possible to measure the pressure (the change thereof) generated by the presence of the exhaust pipe 141 where the powder is accumulated.

[0063] Reference Figure 4 It is explained that control is performed according to the information obtained from the sensing module 180. Figure 4 It shows Figure 1 A block diagram of a control structure of a high-voltage substrate processing apparatus 100 is shown.

[0064] Reference Figure 4 The cooling water supply module 170 may further include a cooler 175. The cooler 175 is used to reduce the temperature of the cooling water supplied through the cooling water supply pipe 171 and the like.

[0065] In addition to the cooling water supply module 170, the processing device 100 may further include a control module 190 and a storage module 195. The control module 190 is connected to the sensing module 180 and the cooling water supply module 170. The control module 190 is a structure for controlling the replacement period of the cooling water supply module 170 or the output capture module 150 based on the sensing result of the sensing module 180. The storage module 195 is a structure for storing data, programs, etc. that the control module 190 can refer to for control.

[0066] The control module 190 receives the temperature of the front end of the exhaust pipe 141 from the temperature sensor 181 connected thereto. The temperature of the front end of the exhaust pipe 141 may be several hundred to one thousand degrees Celsius corresponding to the temperature of the interior chamber 110. The control module 190 may adjust the temperature of the cooling water according to the temperature of the exhaust pipe 141 and the temperature of the low temperature zone 127. When the temperature of the exhaust pipe 141 is high, a method of further reducing the temperature of the cooling water. The control module 190 may operate the cooler 175 to further reduce the temperature of the cooling water. The degree of operation of the cooler 175 may be determined by the control module 190 with reference to the storage module 195.

[0067] The control module 190 also receives the pressure at the rear end of the exhaust pipe 141 from the pressure sensor 185. The pressure of the exhaust pipe 141 may be different depending on the state of the capture module 150. When the capture module 150 is used for a long time, the pressure of the exhaust pipe 141 changes compared to when the capture module 150 is used for a short time. This is because as the powder accumulates in the capture module 150, the flow path in the capture module 150 becomes narrower. Based on the pressure change, the control module 190 can calculate the replacement period of the capture module 150. If the capture module 150 needs to be replaced, the control module 190 can issue an alarm through a buzzer or a display or transmit it to the management computer. The specific degree (time point) of the replacement time can be determined by the control module 190 with reference to the storage module 195.

[0068] Below, refer to Figure 5 The specific structure of the above-mentioned collection module 150 will be described. Figure 5 It is shown Figure 1 A perspective view of the structure of the capture module 150.

[0069] Reference Figure 5 The capture module 150 includes: a main body 151, a pair of exhaust pipe connecting parts 152, 153, a cooling water coil 155, a pair of cooling water supply pipe connecting parts 156, 157, and filters 158, 159.

[0070] The body 151 is a hollow body having an inner space. The body 151 may have, for example, a hexahedral shape. The body 151 may be made of a metal material.

[0071] A pair of exhaust pipe connection parts 152, 153 are connected to both sides of the main body 151. Specifically, the pair of exhaust pipe connection parts can be arranged to form a row along the flow direction F of the mixed gas (the extension direction of the exhaust pipe 141). One of them, the inlet exhaust pipe connection part 152, can be connected to the right side of the main body 151, and the other, the outlet exhaust pipe connection part 153, can be connected to the left side of the main body 151. The pair of exhaust pipe connection parts are detachably connected to the exhaust pipe 141. The pair of exhaust pipe connection parts also connect the mixed gas to the internal space of the main body 151.

[0072] The cooling water coil 155 is a structure disposed in the inner space of the body 151 to cool the mixed gas. The cooling water coil 155 is wound in a coil form, thereby maximizing the time that the cooling water stays in the body 151.

[0073] The pair of cooling water supply pipe connection parts 156 and 157 are structures installed at both ends of the cooling water coil 155. The cooling water supply pipe connection parts 156 and 157 allow the cooling water coil 155 to be detachably connected to the cooling water supply pipe 171 (see Figure 2 If one of the cooling water supply pipe connection parts 156 and 157 is used to receive the cooling water from the cooling water supply pipe 171, the other is used to return the cooling water that has passed through the cooling water coil 155 to the cooling water supply pipe 171. The cooling water supply pipe connection parts 156 and 157 can be arranged along the intersecting direction I intersecting the extending direction F.

[0074] The filters 158 and 159 filter the byproducts or the powder from the inner space of the body 151. One of the filters 158 and 159 may be disposed between the inlet exhaust pipe connection 152 and the cooling water coil 155, and the other may be disposed between the cooling water coil 155 and the outlet exhaust pipe connection 153.

[0075] According to the structure, the byproducts in the mixed gas are solidified to become the powder by the cooling effect of the cooling water flowing in the cooling water coil 155. The powders are accumulated in the inner space of the main body 151. Even if there are some floating powders, they are not discharged outside the main body 151 through the filters 158 and 159. Since the byproducts are controlled, the problem of the flow path being blocked due to the byproducts does not occur on the gas flow path behind the capture module 150.

[0076] Since the powder is accumulated, the life of the capture module 150 itself is not permanent. Figure 4As described above, the manager needs to measure the pressure of the exhaust pipe 141 to understand the life of the capture module 150 and replace it. When replacing the capture module 150, the manager only needs to separate the exhaust pipe connection parts 152, 153 and the cooling water supply pipe connection parts 156, 157, a total of four connection parts. In this way, the exhaust pipe 141 or the cooling water supply pipe 171 can be kept in the original state, and only the capture module 150 can be replaced with a new product.

[0077] The high voltage substrate processing apparatus as described above is not limited to the structure and operation mode of the above-mentioned embodiments. The above-mentioned embodiments can be configured so that various modifications can be made by selectively combining all or part of each embodiment.

[0078] Industrial Applicability

[0079] The present invention has industrial applicability in the field of high-voltage substrate processing device manufacturing.

Claims

1. A high voltage substrate processing device, wherein: include: an inner chamber formed to accommodate a substrate to be processed; The outer chamber comprises a hollow shell and a partition plate, wherein the partition plate is configured to separate the shell into a high temperature zone accommodating the inner chamber and a low temperature zone having a temperature lower than the high temperature zone; a gas supply module for supplying a reaction gas for processing the substrate to the inner chamber at a first pressure higher than the atmospheric pressure, and supplying a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure; an exhaust module, which is configured to communicate with the inner chamber and has an exhaust pipe passing through the low temperature zone, and is used to discharge a mixed gas containing the reaction gas and by-products generated according to the process; and The capture module is configured to be disposed in the low temperature zone in a state of being communicated with the exhaust pipe to capture the by-product in the mixed gas.

2. The high voltage substrate processing apparatus according to claim 1, wherein: The exhaust module further includes a gas discharger, which is formed to be disposed on the exhaust pipe in a manner of being located outside the outer chamber, and adjusts the mixed gas to be discharged to the outside through the capture module. The capture module is located in front of the gas discharger.

3. The high voltage substrate processing apparatus according to claim 1, wherein: Also includes a cooling water supply module having a cooling water supply pipe, The collection module is configured so that the mixed gas is cooled by the cooling water flowing along the cooling water supply pipe, thereby converting the by-product into powder.

4. The high voltage substrate processing apparatus according to claim 3, wherein: The capture module comprises: a pair of exhaust pipe connecting parts, detachably connected to the exhaust pipe; and A pair of cooling water supply pipe connection parts are detachably connected to the cooling water supply pipe.

5. The high voltage substrate processing apparatus according to claim 4, wherein: The pair of exhaust pipe connecting parts are arranged along the extending direction of the exhaust pipe, The pair of cooling water supply pipe connection portions are arranged along a crossing direction that crosses the extending direction.

6. The high voltage substrate processing apparatus according to claim 3, wherein: The cooling water supply module supplies cooling water to one of the housing and the partition plate in order to cool the low temperature area.

7. The high voltage substrate processing apparatus according to claim 3, wherein: include: a sensing module having a temperature sensor for measuring the temperature of the exhaust pipe; as well as A control module is connected to the temperature sensor and the cooling water supply module. The control module adjusts the temperature of the cooling water according to the temperature of the exhaust pipe obtained from the temperature sensor.

8. The high voltage substrate processing apparatus according to claim 7, wherein: The cooling water supply module further includes a cooler configured to cool the cooling water. The control module is used to operate the cooler to reduce the temperature of the cooling water.

9. The high voltage substrate processing apparatus according to claim 1, wherein: Also includes: a sensing module having a pressure sensor for measuring the pressure of the exhaust pipe at the rear end of the capture module; as well as A control module connected to the pressure sensor, The control module outputs a replacement period of the trap module according to the pressure of the exhaust pipe obtained from the pressure sensor.

10. A high voltage substrate processing device, wherein: include: an inner chamber formed to accommodate a substrate to be processed; An outer chamber having a hollow shell for accommodating the inner chamber; a gas supply module configured to supply a reaction gas for processing the substrate to the inner chamber at a first pressure higher than atmospheric pressure, and to supply a protective gas to a space between the outer chamber and the inner chamber at a second pressure set relative to the first pressure; an exhaust module, configured to include an exhaust pipe communicating with the inner chamber and to discharge a mixed gas including the reaction gas and a by-product generated according to the process to the outside of the outer chamber; as well as The capture module is arranged in the outer chamber in a state of being connected to the exhaust pipe, and is exposed to the second pressure by the protective gas on the outside and the first pressure by the reaction gas on the inside to capture the byproducts in the mixed gas.

11. The high voltage substrate processing apparatus according to claim 10, wherein: The difference between the first pressure and the second pressure is less than 2 ATM.

12. The high voltage substrate processing apparatus according to claim 10, wherein: The exhaust module further includes a gas discharger, which is formed to be arranged in the exhaust pipe and is used to adjust the discharge of the mixed gas. The capture module is located in front of the gas discharger.

13. The high voltage substrate processing apparatus according to claim 10, wherein: Also included is a heating module formed to heat the reaction gas to process the substrate, The outer chamber further comprises a partition plate, which divides the shell into a high temperature zone accommodating the inner chamber and the heating module and a low temperature zone with a temperature lower than the high temperature zone. The low temperature zone is filled with cold air.

14. The high voltage substrate processing apparatus according to claim 13, wherein: Also includes a cooling water supply module, The capture module is configured such that the mixed gas is cooled by the cooling water supplied from the cooling water supply module, so that the by-product is turned into powder. The low temperature zone generates the cold air by the cooling water supplied to one of the housing and the partition plate by the cooling water supply module.

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