Gadolinium oxide single crystal film with ultra-wide bandgap and preparation method and application thereof
By optimizing pulsed laser deposition technology, high-quality gadolinium oxide single crystal thin films were prepared, which solved the problem of difficulty in preparing gadolinium oxide single crystal thin films in the prior art, and achieved widespread application in the field of semiconductor devices.
CN119571456BActive Publication Date: 2025-08-29SHANDONG UNIV
Patent Information
- Application Number
- CN202411782413.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-05
- Publication Date
- 2025-08-29
- Estimated Expiration
- 2044-12-05
AI Technical Summary
Technical Problem
The prior art is difficult to prepare high-quality gadolinium oxide single crystal thin films, which limits its application in the field of semiconductor devices.
Method used
Pulse laser deposition technology is used to optimize the process conditions of raw materials, single crystal substrates and PLD equipment to prepare high-quality gadolinium oxide single crystal thin film.
Benefits of technology
A Gd2O3 single crystal thin film with an optical band gap of 5.42 eV was prepared, with a high-quality single crystal structure, and is suitable for semiconductor power devices that are resistant to high voltage, high frequency and radiation.
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Abstract
The present invention relates to a gadolinium oxide single crystal film with an ultra-wide bandgap width, a preparation method thereof, and an application thereof. The Gd2O3 single crystal film is an epitaxial single crystal film with a cubic structure. The growth crystal plane is (222) and / or (444) of Gd2O3. The epitaxial relationship of the film growth is Gd2O3(111) / / GaN(0001) and #imgabs0#. Pulsed laser deposition adopts an industrial-grade excimer laser with a laser wavelength of 248nm, a laser burst length of 20ns, and a laser spot area of 0.05cm. 2 The reflectivity spectrum of the Gd2O3 film of the present invention in the visible light region shows that the reflectivity is less than 20% in the range of 230nm-700nm, and the optical band gap of the film is 5.30eV-5.55eV, making it an excellent candidate material for wide-bandgap oxide semiconductors.
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Citation Information
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