Colored coating with bi-layer thin film interference filter

Abstract

The invention relates to a colored coating with a bilayer thin film interference filter. An electronic device may be configured to have a conductive structure, such as a conductive housing structure. A visible light reflective coating may be formed on the conductive structure. The coating may have an adhesive and transition layer, an opaque pigmented layer on the adhesive and transition layer, and a dual-layer thin film interference filter on the opaque pigmented layer. The two-layer thin film interference filter may include an upper diamond-like carbon (DLC) or CrSiCN layer and a lowermost SiCrCN layer. The coating may exhibit a dark blue or black color that has a relatively uniform visual response even when the underlying conductive structure has a three-dimensional shape.

Description

[0001] This application claims priority to U.S. Patent Application No. 18 / 523,605, filed on November 29, 2023, which claims the benefit of U.S. Provisional Patent Application No. 63 / 581,250, filed on September 7, 2023, both of which are hereby incorporated by reference in their entirety. Technical Field

[0002] The present disclosure relates generally to coatings for electronic device structures, and more particularly, to visible light reflective coatings for conductive electronic device structures. Background Art

[0003] Electronic devices, such as cell phones, computers, watches, and other devices, contain conductive structures, such as conductive housing structures, that are provided with a coating that reflects light of a specific wavelength so that the conductive component appears a desired visible color.

[0004] Providing a coating such as one having a desired color brightness can be challenging. Furthermore, if care is not taken, the coating may exhibit unsatisfactory optical performance under different operating environments and conductive structure geometries. Summary of the invention

[0005] An electronic device may include a conductive structure such as a conductive housing structure. A visible light reflective coating may be formed on the conductive structure. The coating may have an adhesion and transition layer, an opaque coloring layer on the adhesion and transition layer, and a double-layer thin-film interference filter on the opaque coloring layer. The double-layer thin-film interference filter may be an uppermost diamond-like carbon (DLC) or CrSiCN layer and a lowermost SiCrCN layer. The coating may present a dark blue or black color, which has a relatively uniform visual response even when the underlying conductive structure has a three-dimensional shape.

[0006] One aspect of the present disclosure provides a device. The device may include a conductive substrate. The device may include a coating having a color on the conductive substrate. The coating may include an adhesion and transition layer. The coating may include a double-layer thin-film interference filter on the adhesion and transition layer, wherein the double-layer thin-film interference filter includes a CrSiCN layer.

[0007] One aspect of the present disclosure provides an electronic device. The electronic device may include a conductive structure. The electronic device may include a coating on the conductive structure and having a color. The coating may include an adhesion and transition layer. The coating may include a thin film interference filter on the adhesion and transition layer, wherein the thin film interference filter has an uppermost layer including CrSiCN and has a lowermost layer including CrSiCN.

[0008] One aspect of the present disclosure provides an electronic device. The electronic device may include a conductive structure. The electronic device may include a coating on the conductive structure and having a color. The coating may include an adhesion and transition layer. The coating may include a thin film interference filter on the adhesion and transition layer, wherein the thin film interference filter has a first (uppermost) layer including diamond-like carbon (DLC) and has a second (lowermost) layer including CrSiCN. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a perspective view of an illustrative electronic device of the type that may be provided with conductive structures and a visible light reflective coating in accordance with some embodiments.

[0010] Figure 2 is a cross-sectional side view of an illustrative electronic device having conductive structures that may be provided with a visible light reflective coating according to some embodiments.

[0011] Figure 3 is an exploded cross-sectional side view of an illustrative conductive housing sidewall that may be provided with a visible light reflective coating according to some embodiments.

[0012] Figure 4 is a cross-sectional side view of an illustrative visible light reflective coating having a dual-layer interference film and an underlying opaque tinted layer according to some embodiments.

[0013] Figure 5 is a cross-sectional side view of an illustrative visible light reflective coating having a dual-layer interference film with two CrSiCN layers on an underlying opaque colored layer, according to some embodiments.

[0014] Figure 6 is a cross-sectional side view of an illustrative visible light reflective coating having a dual-layer interference film with an uppermost diamond-like carbon (DLC) layer and a lowermost CrSiCN layer on an underlying opaque colored layer, according to some embodiments. DETAILED DESCRIPTION

[0015] Electronic devices and other items may be provided with conductive structures. A coating may be formed on the conductive structure to reflect visible light of a specific wavelength so that the conductive structure presents a desired color. The visible light reflective coating may be deposited on a conductive substrate. The coating may include an adhesion and transition layer on the substrate, an opaque coloring layer on the adhesion and transition layer, and a double-layer thin-film interference filter on the opaque coloring layer. The lowermost layer of the double-layer thin-film interference filter may include CrSiCN. The uppermost layer of the double-layer thin-film interference filter may include diamond-like carbon (DLC) or CrSiCN. The coating may present a dark blue or black color, which presents a relatively uniform visual response even when the underlying conductive structure has a three-dimensional shape.

[0016] Figure 1 An illustrative electronic device of the type that may be provided with conductive structures and visible light reflective coatings is shown. Figure 1 The electronic device 10 may be a computing device (such as a laptop computer), a computer monitor containing an embedded computer, a tablet computer, a cellular telephone, a media player, or other handheld or portable electronic device, a smaller device (such as a wristwatch device (e.g., a watch with a wristband)), a hanging device, a headphone or earpiece device, a device embedded in glasses or other equipment worn on a user's head (e.g., a head-mounted device such as a virtual or augmented reality headset), or other wearable or miniature device, a television, a computer display that does not contain an embedded computer, a gaming device, a navigation device, an embedded system (such as a system in which electronic equipment with a display is installed in a kiosk or a car), a wireless base station, a home entertainment system, a wireless speaker device, a wireless access point, equipment that implements the functionality of two or more of these devices, or other electronic equipment. Figure 1 In the exemplary configuration of , device 10 is a portable device, such as a cellular phone or a tablet computer, having a generally rectangular horizontal profile. Other configurations may be used for device 10 if desired. Figure 1 The examples are for illustrative purposes only.

[0017] exist Figure 1In the example of , device 10 includes a display, such as display 14. Display 14 may be mounted in a housing, such as housing 12. Housing 12, which may sometimes be referred to as a shell or case, may be formed of plastic, glass, ceramic, fiber composite material, metal (e.g., stainless steel, aluminum, etc.), other suitable materials, or a combination of any two or more of these materials. Housing 12 may be formed using a one-piece configuration in which a portion or all of housing 12 is machined or molded into a single structure, or may be formed using multiple structures (e.g., an internal frame structure, one or more structures forming an outer housing surface, etc.). Housing 12 may have metal sidewalls or sidewalls formed of other materials. Examples of metal materials that can be used to form housing 12 include stainless steel, aluminum, silver, gold, titanium, metal alloys, or any other desired conductive material.

[0018] Display 14 may be formed at (e.g., mounted on) a front side (front face) of device 10. Housing 12 may have a rear housing wall on a rear side (rear face) of device 10, opposite the front face of device 10. Conductive housing sidewalls in housing 12 may surround a perimeter of device 10. The rear housing wall of housing 12 may be formed of a conductive material and / or a dielectric material.

[0019] The rear housing wall of housing 12 and / or display 14 may span the length of device 10 (eg, parallel to the Figure 1 The conductive sidewalls of housing 12 may extend across some or all of the height (e.g., parallel to the Z-axis) and width (e.g., parallel to the Y-axis) of device 10. The conductive sidewalls of housing 12 may extend across some or all of the height (e.g., parallel to the Z-axis) of device 10.

[0020] Display 14 may be a touch screen display that incorporates a layer of conductive capacitive touch sensor electrodes or other touch sensor components (e.g., resistive touch sensor components, acoustic touch sensor components, force-based touch sensor components, light-based touch sensor components, etc.) or may be a non-touch-sensitive display. Capacitive touch screen electrodes may be formed from an array of indium tin oxide pads or other transparent conductive structures.

[0021] Display 14 may include a display pixel array formed from liquid crystal display (LCD) components, an electrophoretic display pixel array, a plasma display pixel array, an organic light emitting diode (OLED) display pixel array, an electrowetting display pixel array, or display pixels based on other display technologies.

[0022] Display 14 may be protected using a display cover layer. The display cover layer may be formed of a transparent material such as glass, plastic, sapphire or other crystalline dielectric material, ceramic, or other light-transmitting material. For example, the display cover layer may extend across substantially the entire length and width of device 10.

[0023] Device 10 may include one or more buttons. The button may be formed of a conductive button member that is positioned within (e.g., protrudes through) an opening in housing 12 or an opening in display 14 (as examples). The button may be a rotation button, a slide button, a button that is actuated by pressing a movable button member, etc.

[0024] Figure 2 A cross-sectional side view of device 10 in an exemplary configuration in which display 14 has a display cover layer is shown in FIG. Figure 2 As shown, display 14 may have one or more display layers that form pixel array 18. During operation, pixel array 18 forms an image for a user in an active area of ​​display 14. Display 14 may also have inactive areas (e.g., areas along the borders of pixel array 18) that do not contain pixels and do not produce images. Figure 2 Display cover layer 16 overlaps pixel array 18 in the active area and overlaps electrical components in device 10 .

[0025] Display cover layer 16 may be formed of a transparent material such as glass, plastic, ceramic, or a crystalline material such as sapphire. As an example, illustrative configurations may sometimes be described herein in which a display cover layer and other transparent components in device 10 (e.g., a window for a camera or other light-based device formed in an opening in housing 12) are formed of a hard transparent crystalline material such as sapphire, sometimes referred to as corundum or crystalline aluminum oxide. Sapphire is a desirable material for the display cover layer and windows due to its hardness (9 on the Mohs scale of hardness). In general, however, these transparent components may be formed of any suitable material.

[0026] Display cover layer 16 of display 14 may be planar or curved, and may have a rectangular profile, a circular profile, or a profile of another shape. If desired, openings may be formed in the display cover layer. For example, openings may be formed in the display cover layer to accommodate buttons, speaker ports, or other components. Openings may be formed in housing 12 to form communication or data ports (e.g., audio jack ports, digital data ports, ports for subscriber identity module (SIM) cards, etc.), to form openings for buttons, or to form audio ports (e.g., openings for speakers and / or microphones).

[0027] If desired, device 10 may be coupled to a strap, such as strap 28 (e.g., if device 10 is a wristwatch device). Strap 28 may be used to hold device 10 on a user's wrist (as an example). Strap 28 may sometimes be referred to herein as wristband 28. Figure 2In the example of FIG. 1 , wristband 28 is connected to attachment structure 30 in housing 12 at an opposite side of device 10. Attachment structure 30 may include lugs, pins, springs, clamps, brackets, and / or other attachment mechanisms that configure housing 12 to receive wristband 28. Configurations that do not include a strap may also be used with device 10.

[0028] If desired, a light-based component, such as light-based component 24, can be mounted to align with opening 20 in housing 12. Opening 20 can be circular, can be rectangular, can have an oval shape, can have a triangular shape, can have other shapes with straight edges and / or curved edges, or can have other suitable shapes (profiles when viewed from above). Window member 26 can be mounted in window opening 20 of housing 12 such that window member 26 overlaps component 18. Gaskets, bezels, adhesives, screws, or other fastening mechanisms can be used to attach window member 26 to housing 12. Surface 22 of window member 26 can be flush with exterior surface 23 of housing 12, can be recessed below exterior surface 23, or can be as shown. Figure 3 Surface 23 is shown protruding from exterior surface 23 (eg, surface 22 may be located in a face that protrudes away from surface 23 in the -Z direction). In other words, window member 26 may be mounted to a protruding portion of housing 12. Surface 23 may, for example, form the back of housing 12.

[0029] The conductive structures in device 10 may be provided with a visible light reflective coating that reflects certain wavelengths of light so that the conductive structures exhibit a desired aesthetic appearance (e.g., a desired color, reflectivity, etc.). The conductive structures in device 10 may include, for example, conductive portions of housing 12 (e.g., conductive side walls of device 10, conductive back wall of device 10, protruding portions of housing 12 for mounting window member 26, etc.), attachment structure 30, conductive portions of wristband 28, conductive mesh, conductive component 32, and / or any other desired conductive structures on device 10. Conductive components 32 may include internal components (e.g., internal housing members, a conductive frame, a conductive base, a conductive support plate, a conductive bracket, a conductive clamp, a conductive spring, an input-output component or device, etc.), components located both inside and outside of device 10 (e.g., a conductive SIM card tray or SIM card port, a data port, a microphone port, a speaker port, a conductive button member for a ringer button, a power button, a volume button, or other buttons, etc.), or components mounted on the exterior of device 10 (e.g., a conductive portion of strap 28, such as a clasp for strap 28), and / or any other desired conductive structure on device 10.

[0030] Figure 3 is an exploded cross-sectional side view of a conductive sidewall of device 10 that may be provided with a visible light reflective coating. Figure 3As shown, housing 12 may include a peripheral conductive housing structure, such as a conductive sidewall 12W. Conductive sidewall 12W may extend around a lateral periphery of device 10, for example, in the XY plane (eg, conductive sidewall 12W may extend around a lateral periphery of device 10). Figure 2 extends about the periphery of display 14 and can serve as a conductive border for the display).

[0031] Conductive sidewalls 12W may include one or more ledges 34. Ledges 34 may be used to support a conductive and / or dielectric back wall of device 10 (e.g., at the back of device 10) and / or to support a conductive and / or dielectric back wall of device 10 (e.g., at the front of device 10). Figure 2 To provide a desired visible color to conductive sidewall 12W, a visible light reflective coating such as coating 36 may be deposited on conductive sidewall 12W (e.g., all of conductive sidewall 12W, portions of conductive sidewall 12W that are external to device 10, etc.). Other conductive structures in device 10 (e.g., Figure 2 The coating 36 is deposited on the conductive component 32, other conductive parts of the housing 12, etc.

[0032] In practice, due to variations in the underlying geometry of the conductive structure (e.g., due to limitations of the coating deposition equipment to deposit a uniform coating across the entire underlying geometry), the coating may have varying thicknesses over the surface area of ​​the coating. Figure 3 The coating 36 may present a first thickness T1 at the bottom and top edges of the conductive sidewall 12W (e.g., where the conductive sidewall 12W presents a curved three-dimensional shape), but may present a second thickness T2 along the center of the conductive sidewall 12W (e.g., where the conductive sidewall 12W presents a substantially flat shape). Thickness T2 may represent the maximum thickness of the coating 36 over the entire surface area of ​​the coating (e.g., 100% thickness). Thickness T1 may be less than thickness T2 (e.g., 30% to 70% of thickness T2). If not careful, thickness variations along the surface area of ​​the coating 36 may undesirably change the color of visible light reflected by the coating and, therefore, change the aesthetic appearance of the underlying conductive structure.

[0033] In order to configure the conductive structures in device 10 to exhibit a desired color on different conductive structure geometries, the conductive structures may be provided with a visible light reflective coating having a double-layer thin film interference filter. Figure 4 is a cross-sectional view of a visible light reflective coating having a double-layer thin film interference filter, which can be disposed on a conductive structure (e.g., Figure 1 and Figure 2 The portion of the housing 12, Figure 2 The conductive component 32, Figure 3 On the conductive side wall 12W, etc.

[0034] like Figure 4 As shown, a visible light reflective coating such as coating 36 may be disposed (e.g., deposited, laminated, formed, etc.) on a conductive substrate such as substrate 35. Substrate 35 may be a conductive structure in device 10, such as housing 12 ( Figure 1 and Figure 2 ) of the conductive part, the conductive component 32 ( Figure 2 ) or conductive sidewall 12W ( Figure 3 ). The substrate 35 may be thicker than the coating 36. The thickness of the substrate 35 may be 0.1 mm to 5 mm, greater than 0.3 mm, greater than 0.5 mm, between 5 mm and 20 mm, less than 5 mm, less than 2 mm, less than 1.5 mm, or less than 1 mm (as examples). The substrate 35 may include stainless steel, aluminum, titanium, or other metals or alloys. In other suitable arrangements, the substrate 35 may be an insulating substrate, such as a ceramic substrate, a glass substrate, or a substrate formed of other materials.

[0035] The coating 36 may include an adhesion and transition layer 40 on the substrate 35. The coating 36 may include an opaque colored layer, such as an opaque colored layer 42 on the adhesion and transition layer 40. The coating 36 may include a multilayer thin film interference filter, such as a thin film interference filter (TFIF) 38 on the opaque colored layer 42. If desired, an optional oleophobic coating or other film, coating or layer (e.g., a layer that does not substantially contribute to the color response of the coating) may be laminated on the thin film interference filter 38. The opaque colored layer 42 may, for example, have a first lateral surface that directly contacts the adhesion and transition layer 40, and may have a second lateral surface opposite the first lateral surface.

[0036] The thin-film interference filter 38 may, for example, have a third lateral surface directly contacting the second lateral surface, and may have a fourth lateral surface opposite to the third lateral surface (e.g., the fourth lateral surface may form the uppermost or outermost layer of the coating 36). In general, the thin-film interference filter 38 may include one, two, or more than two layers (films) stacked on the opaque colored layer 42. A specific implementation in which the thin-film interference filter 38 includes two layers (films) is described herein as an example.

[0037] The layers of coating 36 may be deposited on substrate 35 using any suitable deposition technique. Examples of techniques that may be used to deposit the layers in coating 36 include physical vapor deposition (e.g., evaporation and / or sputtering), cathodic arc deposition, chemical vapor deposition, ion plating, laser ablation, and the like. For example, coating 36 may be deposited on substrate 35 in a deposition system having a deposition apparatus (e.g., a cathode). Substrate 35 may be moved (e.g., rotated) within the deposition system as the deposition apparatus (e.g., cathode) deposits the layers of coating 36. If desired, substrate 35 may be dynamically moved / rotated during deposition relative to a speed and / or orientation associated with the deposition apparatus (e.g., cathode). This may help to provide coating 36 with as uniform a thickness as possible over the entire area of ​​the coating, even in situations where substrate 35 has a three-dimensional shape (e.g., to minimize Figure 3 The difference between the thickness T1 and T2).

[0038] The thin film interference filter 38 may be formed by a stack of two material layers, such as inorganic dielectric layers having different refractive index values. The thin film interference filter layers may have a higher refractive index value (sometimes referred to as a "high" refractive index value) and a lower refractive index value (sometimes referred to as a "low" refractive index value). If desired, the high refractive index layers may be interlaced with the low refractive index layers. The incident light may be transmitted through each of the layers in the thin film interference filter 38, while also being reflected from the interface between each of the layers, as well as at the interface between the thin film interference filter and the opaque colored layer 42 and at the interface between the thin film interference filter and the air. By controlling the thickness and refractive index (e.g., composition) of each layer in the thin film interference filter 38, light reflected at each interface can interfere destructively and / or constructively at a selected set of wavelengths so that reflected light from the thin film interference filter 38 is perceived by an observer at a desired color and brightness over a corresponding viewing angle range (incident angle, e.g., from 0 degrees to 60 degrees relative to the normal axis of the conductive structure), while exhibiting a relatively constant response across the entire lateral area of ​​the coating even when deposited on an underlying substrate 35 having a three-dimensional (e.g., curved) shape.

[0039] Unlike the layers of the thin-film interference filter 38, the opaque colored layer 42 is substantially opaque and does not transmit light incident on the coating 36. On the other hand, the opaque colored layer 42 can reflect incident light received through the thin-film interference filter 38 toward and back through the thin-film interference filter 38. The thickness and / or composition of the opaque colored layer 42 can contribute to the color response of the light when it leaves the coating 36, as observed by a user (e.g., in combination with the interference effects imparted to the transmitted and reflected light by the thin-film interference filter 38). The opaque colored layer 42 may also sometimes be referred to herein as a non-interference filter layer or an intrinsic colored layer.

[0040] Figure 5is a cross-sectional side view showing an exemplary composition for coating 36. Figure 5 As shown, adhesion and transition layers 40 may include a seed (adhesion) layer 46 on substrate 35 and one or more transition layers, such as transition layer 44, on seed layer 46. Seed layer 46 may couple substrate 35 to transition layer 44 (e.g., transition layer 44 may be interposed between seed layer 46 and opaque colored layer 42).

[0041] exist Figure 5 In the example of , the seed layer 46 is formed of chromium (Cr), and thus may sometimes be referred to herein as a Cr layer 46 or a Cr seed layer 46. The transition layer 44 may be formed of chromium silicon nitride (CrSiN), and thus may sometimes be referred to herein as a CrSiN layer 44. This is illustrative and not limiting. In general, the seed layer 46 and / or the transition layer 44 may include chromium nitride (CrN), chromium silicon (CrSi), titanium (Ti), chromium carbide (CrC), chromium silicon nitride (CrSiN), chromium silicon carbonitride (CrSiCN), chromium silicon carbide (CrSiC), chromium carbonitride (CrCN), chromium (Cr), combinations of these, other metals, metal alloys, and / or other materials.

[0042] Seed layer 46 may have a thickness 60. Thickness 60 may be, for example, 0.1 micron-1.0 micron, 0.1 micron-0.5 micron, 0.05 micron-0.75 micron, 0.2 micron-0.3 micron, 0.1 micron-10 micron, 0.1 micron-0.5 micron, 0.2 micron-0.5 micron, 0.3 micron-0.4 micron, or other thicknesses. Transition layer 44 may have a thickness 58. Thickness 58 may be, for example, 0.1 micron-1.0 micron, 0.1 micron-0.5 micron, 0.05 micron-0.75 micron, 0.3 micron-0.4 micron, 0.25 micron-0.45 micron, 0.05 micron-0.7 micron, 0.1 micron-5 micron, 0.2 micron-0.9 micron, or other thicknesses (e.g., greater than thickness 60).

[0043] exist Figure 5 In the example of FIG. 4 , the thin-film interference filter 38 is a double-layer interference filter having a first layer 48 and a second layer 50 on the first layer 48. The first layer 48 may be the lowermost (bottom) layer of the thin-film interference filter 38 laminated onto the opaque colored layer 42. The second layer 50 may be the uppermost (top) layer of the thin-film interference filter 38 laminated onto the first layer 48.

[0044] Layer 50 may include chromium, silicon, carbon, and nitrogen (e.g., chromium silicon carbonitride (CrSiCN)), and may also be sometimes referred to herein as CrSiCN layer 50 (or equivalently as SiCrCN layer 50). Layer 48 may also include chromium, silicon, carbon, and nitrogen (e.g., CrSiCN), and may also be sometimes referred to herein as CrSiCN layer 48 (or equivalently as SiCrCN layer 48). The relative amount of each element per unit volume of layer 50 may be different than the relative amount of each element per unit volume of layer 48. This may configure layers 50 and 48 to exhibit different refractive indices, thereby allowing optical reflections at the interface between layers 50 and 48 to contribute to the overall color response of thin film interference filter 38 and, therefore, coating 36. In another specific implementation, layer 50 may include silicon, carbon, and nitrogen (e.g., silicon carbonitride (SiCN)) (e.g., layer 50 may be a SiCN layer).

[0045] Layer 48 may have a thickness 54. Layer 50 may have a thickness 52. Thickness 52 and thickness 54, as well as the composition of layer 48 and layer 50, may be selected to impart a desired interference effect to thin film interference filter 38 on transmitted and reflected light, thereby configuring coating 36 to reflect visible light with a desired visible color response. Thickness 52 may be, for example, 60 nm-70 nm, 70 nm-80 nm, 50 nm-80 nm, 40 nm-90 nm, 20 nm-100 nm, greater than 60 nm, greater than 50 nm, greater than 40 nm, less than 70 nm, less than 80 nm, less than 100 nm, or other thicknesses (e.g., greater than thickness 60). Thickness 54 may be, for example, 30nm-40nm, 40nm-50nm, 50nm-70nm, 20nm-80nm, 10nm-100nm, 25nm-65nm, greater than 30nm, greater than 20nm, less than 60nm, less than 70nm, less than 80nm, less than 40nm, less than 50nm, less than 100nm, or other thickness (e.g., less than thickness 52).

[0046] The composition of layer 50 may be selected so that the atomic percentage of Cr atoms in layer 50 is 25%-30%, 20%-35%, 15%-40%, greater than 25%, greater than 20%, greater than 15%, less than 30%, less than 40%, or other values. The composition of layer 50 may be selected so that the atomic percentage of Si atoms in layer 50 is 40%-45%, 37%-46%, 25%-50%, 35%-52%, greater than 40%, greater than 30%, greater than 25%, less than 50%, less than 60%, or other values. The composition of layer 50 may be selected so that the atomic percentage of N atoms in layer 50 is 25%-30%, 20%-35%, 15%-40%, greater than 25%, greater than 20%, greater than 15%, less than 30%, less than 40%, or other values.

[0047] The composition of layer 48 may be selected so that the atomic percentage of Cr atoms in layer 48 is 30%-35%, 25%-40%, 20%-47%, greater than 30%, greater than 25%, greater than 15%, less than 38%, less than 44%, or other values ​​(e.g., greater than the atomic % of Cr atoms in layer 50). The composition of layer 48 may be selected so that the atomic percentage of Si atoms in layer 48 is 35%-40%, 31%-47%, 25%-50%, 35%-52%, greater than 30%, greater than 20%, greater than 25%, less than 40%, less than 50%, or other values ​​(e.g., less than the atomic % of Si atoms in layer 50). The composition of layer 48 may be selected so that the atomic percentage of N atoms in layer 48 is 25%-30%, 20%-35%, 15%-40%, greater than 25%, greater than 20%, greater than 15%, less than 30%, less than 40%, or other values.

[0048] The thickness and / or composition of the opaque colored layer 42 also contributes to the color response of the coating 36. The opaque colored layer 42 has a thickness 56. As an example, the opaque colored layer 42 may include CrSiN, and therefore may also be sometimes referred to herein as a CrSiN layer 42. This is merely exemplary, and in general, the opaque colored layer 42 may include other materials. The coating 36 may include a single opaque colored layer 42 (e.g., Figure 5 The thin film interference filter 38 may be provided with two or more opaque colored layers 42, which may be omitted, between the thin film interference filter 38 and the adhesion and transition layer 40, stacked on top of each other. The thickness 56 may be, for example, 300 nm-500 nm, 400 nm-500 nm, 500 nm-600 nm, 200 nm-700 nm, 100 nm-800 nm, greater than 300 nm, greater than 200 nm, greater than 100 nm, less than 600 nm, less than 800 nm, or other thicknesses (e.g., greater than the thickness of the thin film interference filter 38).

[0049] The composition of the opaque colored layer 42 may be selected so that the atomic percentage of Cr atoms in the layer 42 is 30%-35%, 25%-40%, 20%-47%, greater than 30%, greater than 25%, greater than 15%, less than 38%, less than 44%, or other values ​​(e.g., greater than the atomic % of Cr atoms in the layer 50). The composition of the layer 42 may be selected so that the atomic percentage of Si atoms in the layer 42 is 30%-35%, 25%-40%, 20%-47%, greater than 30%, greater than 25%, greater than 15%, less than 38%, less than 44%, or other values.

[0050] When configured in this manner, coating 36 can configure substrate 35 to exhibit a dark blue color that is relatively uniform even when the thickness of coating 36 varies due to the geometry of underlying substrate 35. For example, at a location along a lateral region of coating 36 where coating 36 exhibits a peak / maximum thickness, when viewed at an angle of zero degrees relative to a normal axis / surface of the lateral region of coating 36, Figure 5 The coating 36 may exhibit an L greater than 35, greater than 38, greater than 30, greater than 25, 35-45, 30-50, 35-50, less than 40, less than 45, less than 50. * Value (at L * a * b * color space) or other L * Value; -5-5, -2-5, -1-1, -3-8, -10-10, -1-0, greater than -1, greater than -2, greater than -5, less than 0, less than 1, less than 2, less than 5 * Value (at L * a * b * color space) or other * values; and b of -5-20, -3-16, -10-25, less than -5, less than 0, greater than -20, greater than -16, greater than -25, greater than -30 * Value (at L * a * b * color space) or other b * value.

[0051] If desired, layer 50 of thin film interference filter 38 may be replaced by a layer comprising diamond-like carbon, such as Figure 6 As shown in the example. Figure 6 As shown, thin film interference filter 38 may include a layer 70 including DLC, sometimes referred to herein as DLC layer 70 (eg, the uppermost layer of thin film interference filter 38 and coating 36 ). DLC layer 70 may be laminated on layer 48 .

[0052] DLC is an amorphous synthetic carbon material with a relatively large number of sp 3 Hybridized carbon atoms (e.g., sp 3 The hybridized carbon atoms are relative to other atoms in the layer (such as hydrogen atoms and / or sp 2 The ratio of hybrid (graphitic) carbon atoms) exceeds a threshold level), which imparts diamond-like properties to the material (e.g., diamond-like hardness, smoothness, etc.). DLC may also include one or more fillers (e.g., non-sp 3 Hybrid atoms), such as sp 2Hybridized carbon (eg, graphite-like carbon) and / or hydrogen. If desired, the DLC may be provided with nitrogen (N) atoms (eg, to help improve corrosion resistance) and / or one or more metal dopants (eg, to help improve electrical conductivity).

[0053] exist Figure 6 In a specific implementation, as an example, opaque layer 42 may include CrSiN (e.g., may be a CrSiN layer), or may include CrSiCN (e.g., may be a CrSiCN layer). Layer 70 may have a thickness 72. Generally, thickness 72 may be 10nm-100nm, thickness 54 may be 40nm-700nm, and thickness 56 may be 500nm-700nm, 400nm-800nm, 200nm-900nm, greater than 500nm, greater than 400nm, greater than 300nm, less than 700nm, less than 800nm, or other thicknesses (e.g., less than thickness 54).

[0054] As a more specific example, in a first implementation, thickness 72 is 55nm-65nm, 50nm-70nm, 40nm-80nm, 32nm-91nm, greater than 55nm, greater than 50nm, greater than 40nm, less than 70nm, less than 80nm, less than 100nm, or other thicknesses. In a first implementation, thickness 54 is substantially greater than thickness 72. For example, thickness 54 may be 400nm-500nm, 300nm-600nm, 410nm-465nm, greater than 400nm, greater than 200nm, greater than 100nm, less than 500nm, less than 600nm, less than 700nm, or other thicknesses greater than thickness 72.

[0055] In a second implementation, thickness 72 is 25 nm-30 nm, 20 nm-40 nm, 10 nm-50 nm, greater than 25 nm, greater than 20 nm, greater than 15 nm, less than 35 nm, less than 40 nm, less than 50 nm, or other thicknesses. In a second implementation, thickness 54 is substantially greater than thickness 72. For example, thickness 54 may be 300 nm-400 nm, 200 nm-500 nm, greater than 300 nm, greater than 100 nm, less than 400 nm, less than 600 nm, or other thicknesses greater than thickness 72.

[0056] In a third implementation, thickness 72 is 30 nm-35 nm, 25 nm-40 nm, 20 nm-50 nm, greater than 25 nm, greater than 30 nm, greater than 15 nm, less than 35 nm, less than 40 nm, less than 50 nm, or other thicknesses. In a third implementation, thickness 54 is similar to thickness 72. For example, thickness 54 may be 40 nm-45 nm, 35 nm-48 nm, 30 nm-50 nm, 20 nm-60 nm, greater than 40 nm, greater than 35 nm, greater than 30 nm, less than 45 nm, less than 50 nm, less than 60 nm, or other thicknesses.

[0057] In a fourth embodiment, the thickness 72 is 25nm-30nm, 20nm-40nm, 10nm-50nm, greater than 25nm, greater than 20nm, greater than 15nm, less than 35nm, less than 40nm, less than 50nm, or other thicknesses. In a fourth embodiment, the thickness 54 is 100nm-120nm, 80nm-140nm, 70nm-150nm, greater than 100nm, greater than 90nm, less than 120nm, less than 150nm, or other thicknesses (e.g., greater than the thickness 72).

[0058] In a fifth embodiment, the thickness 72 is 15nm-25nm, 10nm-30nm, 10nm-40nm, greater than 15nm, greater than 10nm, greater than 5nm, less than 25nm, less than 30nm, less than 50nm, or other thicknesses. In a fifth embodiment, the thickness 54 is 150nm-200nm, 170nm-196nm, 140nm-220nm, greater than 150nm, greater than 100nm, less than 200nm, less than 250nm, or other thicknesses (e.g., greater than the thickness 72).

[0059] In a sixth embodiment, the thickness 72 is 25nm-30nm, 20nm-40nm, 10nm-50nm, greater than 25nm, greater than 20nm, greater than 15nm, less than 35nm, less than 40nm, less than 50nm, or other thicknesses. In a sixth embodiment, the thickness 54 is 300nm-400nm, 200nm-500nm, greater than 300nm, greater than 100nm, less than 400nm, less than 600nm, or other thicknesses greater than the thickness 72 (e.g., greater than the thickness 72).

[0060] In a seventh embodiment, the thickness 72 is 70nm-75nm, 50nm-90nm, 60nm-80nm, greater than 70nm, greater than 60nm, greater than 50nm, less than 75nm, less than 80nm, less than 100nm, or other thicknesses. In a seventh embodiment, the thickness 54 is 50nm-70nm, 55nm-65nm, greater than 50nm, greater than 40nm, less than 75nm, less than 80nm, or other thicknesses.

[0061] In an eighth embodiment, the thickness 72 is 75nm-80nm, 70nm-85nm, 60nm-90nm, greater than 75nm, greater than 70nm, greater than 50nm, less than 85nm, less than 90nm, less than 100nm, or other thicknesses. In a seventh embodiment, the thickness 54 is 40nm-50nm, 30nm-60nm, greater than 40nm, greater than 30nm, less than 50nm, less than 60nm, or other thicknesses.

[0062] When configured in this manner (e.g., in any of the first to eighth or other embodiments), the coating 36 can configure the substrate 35 to appear as an attractive deep black color with a blue tint when the coating and substrate are viewed at different angles (e.g., as opposed to the yellow tint in embodiments where the TFIF is replaced with a single opaque coloring layer (such as an opaque DLC layer). The color response of the coating 36 and the substrate 35 is relatively uniform even when the thickness of the coating 36 varies due to the geometry of the underlying substrate 35. For example, at a location along a lateral region of the coating 36 where the coating 36 exhibits a peak / maximum thickness, when viewed at an angle of zero degrees relative to the normal axis / surface of the lateral region of the coating 36, Figure 6 The coating 36 may exhibit an L greater than 44, greater than 42, greater than 40, greater than 38, 35-45, 30-50, 35-50, less than 50, less than 55, less than 60. * Value (at L * a * b * color space) or other L * Value; -5-5, -2-5, -1-1, -3-8, -10-10, -1-0, greater than -1, greater than -2, greater than -5, less than 0, less than 1, less than 2, less than 5 * Value (at L * a * b * color space) or other * values; and b between -1 and -3, between -1 and -15, less than 0, less than -1, greater than -20, greater than -25 * Value (at L* a * b * color space) or other b * value.

[0063] Figure 5 and Figure 6 The examples are merely exemplary. Additional elements may be included in one or more of the layers of coating 36. The layers may be arranged in other orders. The layers may have different thicknesses or compositions. The coating may have other color distributions and angle responses. The layers described herein may also sometimes be referred to as films.

[0064] Device 10 may collect and / or use personally identifiable information. As is well known, use of personally identifiable information should be subject to privacy policies and practices that are generally recognized to meet or exceed industry or government requirements for maintaining user privacy. Specifically, personally identifiable information data should be managed and processed to minimize the risk of unintentional or unauthorized access or use, and the nature of authorized use should be clearly stated to the user.

[0065] According to one embodiment, a device is provided, comprising a conductive substrate and a colored coating on the conductive substrate, the coating comprising an adhesion and transition layer and a double-layer thin-film interference filter on the adhesion and transition layer, the double-layer thin-film interference filter comprising a CrSiCN layer.

[0066] According to another embodiment, the CrSiCN layer is the lowermost layer of the double-layer thin-film interference filter.

[0067] According to another embodiment, the double-layer thin-film interference filter comprises an additional CrSiCN layer on the CrSiCN layer.

[0068] According to another embodiment, the coating comprises an opaque CrSiN layer between the adhesion and transition layer and the CrSiCN layer.

[0069] According to another embodiment, the adhesion and transition layer includes a Cr seed layer on the substrate and a CrSiN transition layer between the Cr seed layer and the opaque CrSiN layer.

[0070] According to another embodiment, the additional CrSiCN layer is thicker than the CrSiCN layer.

[0071] According to another embodiment, the thickness of the additional CrSiCN layer is greater than 60 nm and the thickness of the CrSiCN layer is less than 50 nm.

[0072] According to another embodiment, the atomic percentage of Cr atoms in the additional CrSiCN layer is less than 30%, the atomic percentage of Si atoms in the additional CrSiCN layer is greater than 30%, and the atomic percentage of C atoms in the additional CrSiCN layer is less than 30%.

[0073] According to another embodiment, the atomic percentage of Cr atoms in the CrSiCN layer is greater than 25%, the atomic percentage of Si atoms in the CrSiCN layer is less than 40%, and the atomic percentage of C atoms in the additional CrSiCN layer is greater than 20%.

[0074] According to another embodiment, the double-layer thin-film interference filter includes a diamond-like carbon (DLC) layer on the CrSiCN layer.

[0075] According to another embodiment, the CrSiCN layer is thicker than the DLC layer.

[0076] According to another embodiment, the thickness of the CrSiCN layer is greater than 200 nm and the thickness of the DLC layer is less than 100 nm.

[0077] According to another embodiment, the device includes an opaque layer between the adhesion and transition layer and the CrSiCN layer, the opaque layer including carbon, silicon and nitrogen.

[0078] According to another embodiment, at the location of maximum thickness and at a viewing angle of zero degrees relative to the normal axis of the coating, the coating has an L greater than 30. * value, a between -10 and 10 * Values ​​and b between -20 and 0 * value.

[0079] According to one embodiment, an electronic device is provided, comprising a conductive structure and a colored coating on the conductive structure, the coating comprising an adhesion and transition layer and a thin film interference filter on the adhesion and transition layer, the thin film interference filter having an uppermost layer comprising CrSiCN and having a lowermost layer comprising CrSiCN.

[0080] According to another embodiment, the uppermost layer directly contacts the lowermost layer of the thin-film interference filter.

[0081] According to another embodiment, the electronic device comprises the coating, the coating comprising an opaque layer between the thin-film interference filter and the adhesion and transition layer, the opaque layer comprising CrSiN.

[0082] According to one embodiment, an electronic device is provided, comprising a conductive structure and a colored coating on the conductive structure, the coating comprising an adhesion and transition layer and a thin film interference filter on the adhesion and transition layer, the thin film interference filter having a first layer comprising diamond-like carbon (DLC) and having a second layer comprising CrSiCN.

[0083] According to another embodiment, the second layer is interposed between the first layer and the adhesion and transition layer.

[0084] According to another embodiment, the electronic device comprises the coating, the coating comprising an opaque layer between the thin-film interference filter and the adhesion and transition layer, the opaque layer comprising CrSiCN.

[0085] The foregoing is merely illustrative and various modifications may be made to the embodiments described. The foregoing embodiments may be implemented independently or in any combination.

Claims

1. A device, comprising: Conductive substrate; as well as A coating layer, the coating layer being on the conductive substrate and having a color, the coating layer comprising: Adhesion and transition layers, and A double-layer thin-film interference filter is disposed on the adhesion and transition layer, wherein the double-layer thin-film interference filter comprises a CrSiCN layer. 2 . The device according to claim 1 , wherein the CrSiCN layer is the lowermost layer of the double-layer thin-film interference filter. 3 . The device according to claim 2 , wherein the double-layer thin-film interference filter further comprises an additional CrSiCN layer on the CrSiCN layer.

4. The device of claim 3, wherein the coating further comprises an opaque CrSiN layer between the adhesion and transition layer and the CrSiCN layer. 5 . The device of claim 4 , wherein the adhesion and transition layer comprises a Cr seed layer on the substrate and a CrSiN transition layer between the Cr seed layer and the opaque CrSiN layer. The device of claim 3 , wherein the additional CrSiCN layer is thicker than the CrSiCN layer.

7. The device of claim 6, wherein the thickness of the additional CrSiCN layer is greater than 60 nm and the thickness of the CrSiCN layer is less than 50 nm.

8. The device of claim 3, wherein the atomic percentage of Cr atoms in the additional CrSiCN layer is less than 30%, the atomic percentage of Si atoms in the additional CrSiCN layer is greater than 30%, and the atomic percentage of C atoms in the additional CrSiCN layer is less than 30%.

9. The device of claim 8, wherein the atomic percentage of Cr atoms in the CrSiCN layer is greater than 25%, the atomic percentage of Si atoms in the CrSiCN layer is less than 40%, and the atomic percentage of C atoms in the additional CrSiCN layer is greater than 20%.

10. The device according to claim 2, wherein the double-layer thin-film interference filter further comprises a diamond-like carbon (DLC) layer on the CrSiCN layer. The device of claim 10 , wherein the CrSiCN layer is thicker than the DLC layer.

12. The device of claim 11, wherein the thickness of the CrSiCN layer is greater than 200 nm, and the thickness of the DLC layer is less than 100 nm.

13. The device of claim 10, further comprising an opaque layer between the adhesion and transition layer and the CrSiCN layer, the opaque layer comprising carbon, silicon, and nitrogen.

14. The device of claim 1, wherein the coating has an L greater than 30 at a location of maximum thickness and at a viewing angle of zero degrees relative to a normal axis of the coating. * value, a between -10 and 10 * Values ​​and b between -20 and 0 * value.

15. An electronic device, comprising: Conductive structure; as well as A coating layer, the coating layer being on the conductive structure and having a color, the coating layer comprising: Adhesion and transition layers, and A thin film interference filter is located on the adhesion and transition layer, wherein the thin film interference filter has an uppermost layer comprising CrSiCN and has a lowermost layer comprising CrSiCN.

16. The electronic device of claim 15, wherein the uppermost layer of the thin-film interference filter directly contacts the lowermost layer.

17. The electronic device of claim 15, wherein the coating further comprises: An opaque layer is disposed between the thin film interference filter and the adhesion and transition layer, the opaque layer comprising CrSiN.

18. An electronic device, comprising: Conductive structure; as well as A coating layer, the coating layer being on the conductive structure and having a color, the coating layer comprising: Adhesion and transition layers, and A thin-film interference filter is located on the adhesion and transition layer, wherein the thin-film interference filter has a first layer comprising diamond-like carbon DLC and has a second layer comprising CrSiCN.

19. The electronic device of claim 18, wherein the second layer is interposed between the first layer and the adhesion and transition layer.

20. The electronic device of claim 18, wherein the coating further comprises: An opaque layer is disposed between the thin film interference filter and the adhesion and transition layer, wherein the opaque layer comprises CrSiCN.

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