Image sensor, camera module, electronic equipment and method for manufacturing packaging structure of image sensor

Abstract

The invention provides an image sensor, which comprises a sensor chip and a packaging structure, and the packaging structure comprises a first transparent substrate; the packaging assembly is used for packaging a sensor chip, and the packaging assembly is arranged on one side, facing a photosensitive area of the sensor chip, of the first transparent substrate; the orthographic projection of the packaging assembly on the first transparent substrate is not overlapped with the orthographic projection of the photosensitive area of the sensor chip on the first transparent substrate; the light adjusting assembly is used for adjusting the intensity of light entering a light sensing area of a sensor chip, the light adjusting assembly is arranged on one side of the first transparent substrate, and the orthographic projection of the light adjusting assembly on the first transparent substrate covers the orthographic projection of the light sensing area of the sensor chip on the first transparent substrate.

Description

Image sensor, camera module, electronic device, and method for manufacturing image sensor packaging structure Technical Field

[0001] The present disclosure relates to the technical field of camera components, and in particular to an image sensor, a camera module, an electronic device, and a method for manufacturing a packaging structure of an image sensor. Background Art

[0002] With the development of technology, cameras are used in more and more scenarios in modern society, such as mobile phone cameras, autonomous driving cameras, industrial control cameras, security cameras, etc.

[0003] The camera compact module (CCM) is a crucial component for image capture and the most important part of a camera. The image sensor is the core component of a camera module, converting optical signals into electrical signals and then converting them into digital signals through a readout circuit. The complementary metal oxide semiconductor image sensor (CMOS image sensor, abbreviated as CIS) is a commonly used image sensor in camera modules.

[0004] Summary of the Invention

[0005] According to a first aspect of the present disclosure, an image sensor is provided, comprising a sensor chip and a packaging structure, the packaging structure comprising: a first transparent substrate; a packaging component for packaging the sensor chip, the packaging component being arranged on a side of the first transparent substrate facing a photosensitive area of ​​the sensor chip, and the orthographic projection of the packaging component on the first transparent substrate does not overlap with the orthographic projection of the photosensitive area of ​​the sensor chip on the first transparent substrate; and a dimming component for adjusting the intensity of light incident on the photosensitive area of ​​the sensor chip, the dimming component being arranged on one side of the first transparent substrate, and the orthographic projection of the dimming component on the first transparent substrate covering the orthographic projection of the photosensitive area of ​​the sensor chip on the first transparent substrate.

[0006] In some embodiments, the dimming component and the packaging component are arranged on the same side of the first transparent substrate. The dimming component includes a first transparent conductive layer, which is arranged on a surface of the first transparent substrate facing the photosensitive area of ​​the sensor chip.

[0007] In some embodiments, the packaging component includes: a carrier layer, which is arranged on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip; a rewiring layer, which is arranged on the surface of the carrier layer facing away from the first transparent substrate; a solder mask, at least a portion of which is arranged on the surface of the carrier layer facing away from the first transparent substrate, the orthographic projection of the solder mask on the first transparent substrate surrounds the orthographic projection of the photosensitive area on the first transparent substrate, and in the direction perpendicular to the first transparent substrate, the thickness of the portion of the solder mask arranged on the surface of the carrier layer facing away from the first transparent substrate is greater than the thickness of the rewiring layer; a solder mask surface, which is arranged on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip and covers at least a portion of the rewiring layer, and the solder mask surface includes a plurality of first through holes.

[0008] In some embodiments, the dimming component also includes a second conductive layer insulated from the first conductive layer, the second conductive layer is arranged on the side of the first conductive layer facing away from the first transparent substrate, the supporting layer includes a first supporting portion and a second supporting portion, the first supporting portion is arranged on the surface of the first transparent conductive layer facing away from the first transparent substrate, the second supporting portion is arranged on the surface of the second transparent conductive layer facing away from the first transparent substrate, the surface of the first supporting portion facing away from the first transparent substrate and the surface of the second supporting portion facing away from the first transparent substrate are flush, the second supporting portion includes at least one second through hole, the rewiring layer is arranged on the surface of the first supporting portion and the second supporting portion facing away from the first transparent substrate, the orthographic projection of the at least one second through hole on the first transparent substrate is located inside the orthographic projection of the rewiring layer on the first transparent substrate.

[0009] In some embodiments, the package assembly further includes an electrical connection portion, which is disposed in the second through hole and electrically connects the second transparent conductive layer and the rewiring layer.

[0010] In some embodiments, the material of the electrical connection portion is the same as that of the rewiring layer.

[0011] In some embodiments, the solder mask surface includes a first mask portion and a second mask portion, the first mask portion is arranged on the surface of the first transparent conductive layer facing away from the first transparent substrate, and the second mask portion is arranged on the surface of the supporting layer or the rewiring layer facing away from the first transparent substrate, the surface of the first mask portion facing away from the first transparent substrate and the surface of the second mask portion facing away from the first transparent substrate are flush, the first mask portion includes at least one third through hole, and the orthographic projection of the at least one third through hole on the first transparent substrate is located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate.

[0012] In some embodiments, the dimming component is arranged on a side of the first transparent substrate facing away from the packaging component.

[0013] In some embodiments, the dimming component includes a first transparent conductive layer, which is arranged on a surface of the first transparent substrate facing away from the light-sensing region of the sensor chip.

[0014] In some embodiments, the dimming component further includes a second transparent substrate, which is bonded and fixed to the first transparent substrate by optically transparent adhesive, and the first transparent conductive layer is arranged on a surface of the second transparent substrate facing away from the first transparent substrate.

[0015] In some embodiments, the dimming component further includes: an electrochromic layer, which is arranged on the surface of the first transparent conductive layer facing away from the first transparent substrate; an ion conductive layer, which is arranged on the surface of the electrochromic layer facing away from the first transparent substrate; an ion storage layer, which is arranged on the surface of the ion conductive layer facing away from the first transparent substrate; and a second transparent conductive layer, which is arranged on the surface of the ion storage layer facing away from the first transparent substrate, wherein the orthographic projections of the electrochromic layer, the ion conductive layer, the ion storage layer and the second transparent conductive layer on the first transparent substrate are located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate.

[0016] In some embodiments, the dimming component includes a liquid crystal layer, and the liquid crystal layer is sandwiched between the third transparent substrate and the fourth transparent substrate.

[0017] In some embodiments, the dimming component also includes: a third transparent conductive layer, which is arranged on the surface of the third transparent substrate facing the liquid crystal layer; a first orientation layer, which is arranged on the surface of the third transparent conductive layer facing the liquid crystal layer; a first polarizer, which is arranged on the surface of the third transparent substrate facing away from the liquid crystal layer; a fourth transparent conductive layer, which is arranged on the surface of the fourth transparent substrate facing the liquid crystal layer; a second orientation layer, which is arranged on the surface of the fourth transparent conductive layer facing the liquid crystal layer; a second polarizer, which is arranged on the surface of the fourth transparent substrate facing away from the liquid crystal layer; and the surface of the first polarizer facing away from the third transparent substrate and the surface of the first transparent substrate facing away from the packaging component are bonded and fixed by optically transparent adhesive.

[0018] In some embodiments, the third transparent substrate and the fourth transparent substrate are thin glass substrates.

[0019] In some embodiments, the third transparent substrate and the fourth transparent substrate are flexible substrates.

[0020] In some embodiments, the dimming component further includes: a first nanograting array, which is arranged on the surface of the third transparent substrate facing the liquid crystal layer, the first nanograting array including a plurality of nanowires extending along a first direction; and a second nanograting array, which is arranged on the surface of the fourth transparent substrate facing the liquid crystal layer, the second nanograting array including a plurality of nanowires extending along a second direction, wherein the first direction is perpendicular to the second direction.

[0021] In some embodiments, the dimming component further includes: a fifth transparent conductive layer, which is arranged on the surface of the third transparent substrate facing the liquid crystal layer and fills the gaps between the multiple nanowires of the first nanograting array; a third orientation layer, which is arranged on the surface of the fifth transparent conductive layer facing the liquid crystal layer; a sixth transparent conductive layer, which is arranged on the surface of the fourth transparent substrate facing the liquid crystal layer and fills the gaps between the multiple nanowires of the second nanograting array; and a fourth orientation layer, which is arranged on the surface of the sixth transparent conductive layer facing the liquid crystal layer.

[0022] In some embodiments, the third transparent substrate is bonded and fixed to the first transparent substrate by optically transparent adhesive.

[0023] In some embodiments, the third transparent substrate and the first transparent substrate are the same transparent substrate.

[0024] In some embodiments, the liquid crystal layer uses twisted nematic liquid crystal.

[0025] In some embodiments, the image sensor is a CMOS image sensor.

[0026] According to a second aspect of the present disclosure, a camera module is provided, comprising the above-mentioned image sensor and a lens module located on the light incident side of the image sensor.

[0027] According to a third aspect of the present disclosure, an electronic device is provided, comprising the above-mentioned camera module.

[0028] According to a fourth aspect of the present disclosure, a method for manufacturing the packaging structure of the aforementioned image sensor is provided. The method comprises: providing a first transparent substrate; preparing a dimming component on one side of the first transparent substrate, wherein the orthographic projection of the dimming component on the first transparent substrate overlaps the orthographic projection of the photosensitive area of ​​the sensor chip of the image sensor on the first transparent substrate; and preparing a packaging component on one side of the first transparent substrate, wherein the orthographic projection of the packaging component on the first transparent substrate does not overlap with the orthographic projection of the photosensitive area of ​​the sensor chip of the image sensor on the first transparent substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly describe the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0030] FIG1 shows an exploded view of a camera module in the related art;

[0031] FIG2 shows an aperture diagram under different states;

[0032] FIG3 shows a simplified diagram of the imaging optical path of the camera module;

[0033] FIG4 shows a cross-sectional view of the basic structure of a conventional image sensor;

[0034] FIG5 shows a top view of a conventional image sensor packaging structure;

[0035] FIG6 shows a cross-sectional view of a conventional image sensor package structure taken along line AA in FIG5 ;

[0036] FIG7 shows a top view of a packaging structure of an image sensor according to an embodiment of the present disclosure;

[0037] FIG8 shows a cross-sectional view of an image sensor according to an embodiment of the present disclosure, wherein the cross-sectional view of the package structure is taken along line BB in FIG7 ;

[0038] FIG9 shows a cross-sectional view of a packaging structure of an image sensor according to an embodiment of the present disclosure;

[0039] FIG10 shows a cross-sectional view of a packaging structure of an image sensor according to an embodiment of the present disclosure;

[0040] FIG11 shows the transmittance spectrum of the package structure shown in FIG8 in the visible light range;

[0041] FIG12 shows the transmittance spectrum of the package structure shown in FIG8 in the visible light range;

[0042] FIG13 shows a cross-sectional view of a packaging structure of an image sensor according to an embodiment of the present disclosure;

[0043] FIG14 shows a cross-sectional view of a packaging structure of an image sensor according to an embodiment of the present disclosure;

[0044] FIG. 15 shows a cross-sectional view of a packaging structure of an image sensor according to an embodiment of the present disclosure.

[0045] The shapes and thicknesses of the film layers in the drawings do not reflect the actual proportions of the film layers, and are only intended to illustrate the present disclosure. DETAILED DESCRIPTION

[0046] With the increasing popularity of cameras, their application scenarios are expanding, including mobile phone photography, drone videography, and security monitoring. While users appreciate the speed and convenience of cameras in these applications, they are also plagued by some inconveniences. For example, imaging is difficult in bright lighting, backlit shots result in dark faces, and front-lit shots result in overexposure and excessive brightness. While adjusting the aperture and focal length can address some of these issues, this also introduces new drawbacks, such as high cost, long focusing times, and unsuitability for high-speed imaging.

[0047] The camera module is a crucial component for image capture and the most important part of a camera. Figure 1 shows an exploded view of a camera module in related art. As shown in Figure 1, the camera module primarily includes a cover 40, a lens module 20, a voice coil motor (VCM) 30, a bracket 50, an infrared filter 60, an image sensor 10, and a printed circuit board (PCB) 70.

[0048] The main components of the lens module 20 are the lens group and the filter device (aperture). The aperture is a device used to control the amount of light that passes through the lens and enters the photosensitive surface of the image sensor. The aperture is usually set in the lens module. The amount of light entering is proportional to the square of the effective light-transmitting hole diameter D of the lens and inversely proportional to the focal length f of the lens. The ratio of D to f is called the relative clear aperture. The reciprocal of the relative clear aperture is called the aperture number, also known as the F number, F = f / D. The smaller the aperture number, the larger the clear aperture, and the more light enters in the same unit time. Figure 2 shows the aperture diagram under different states.

[0049] The voice coil motor 30 controls the current to drive the spring / shrapnel movement, adjusting the position of each lens in the lens module along the X, Y, and Z axes to achieve the sharpest focus. Simply put, the voice coil motor adjusts the focal length.

[0050] The image sensor 10 is the core component of the camera module. It converts the optical signal into an electrical signal and converts it into a digital signal through the readout circuit. The complementary metal oxide semiconductor image sensor (CMOS image sensor, abbreviated as CIS) is an image sensor commonly used in camera modules. Figure 3 shows a simplified diagram of the imaging optical path of the camera module. As shown in Figure 3, the imaging optical path is roughly as follows: the light enters from the lens module, the aperture adjusts the amount of light entering, the lens group adjusts the focal length, passes through the packaging substrate of the image sensor, and is incident on the sensor chip. The sensor chip is located at the focal plane of the optical path. The correlation can be expressed by the following formula:

[0051] Here, ΔL represents depth of field, f represents focal length (image distance), F represents aperture value, L represents shooting distance, and δ represents the diameter of the circle of confusion. In camera modules, the diameter of the circle of confusion is generally fixed, so to achieve clear imaging, the aperture value and focal length need to be adjusted to appropriate values.

[0052] The camera modules described above include an aperture and adjustable focus. Some low-cost camera modules, however, use a fixed focus or no aperture, and are unable to capture images in scenes with varying lighting conditions.

[0053] In the related art, in order to achieve clear imaging, a separate dimming component is usually provided in the camera module (for example, arranged on the light incident side of the lens group, the light exit side of the lens group, or between adjacent lenses in the lens group). This structure will significantly increase the overall thickness of the camera module, which is not conducive to the thinness and lightness of the device. The present disclosure proposes a packaging structure for an image sensor, which integrates the dimming component into the packaging structure of the image sensor, thereby greatly reducing the thickness of the camera module. Without increasing more costs, the image sensor disclosed in the present disclosure can effectively adjust the brightness of the incident light, so that it can quickly image in a high-brightness range. Since there is no need to change the aperture size, there is no need to readjust the focal length, which greatly shortens the imaging time.

[0054] Figure 4 shows a cross-sectional view of the basic structure of a conventional image sensor. Image sensor 10 typically includes a sensor chip 11, an optical film layer 13 located on the light-entering side of sensor chip 11, and a packaging structure 12. The optical film layer 13 typically includes a color filter and a microlens structure. The direction of incident light is indicated by the arrow in Figure 4. Figure 5 shows a top view of the packaging structure of a conventional image sensor. Figure 6 shows a cross-sectional view of the packaging structure of a conventional image sensor taken along line AA in Figure 5. As shown in Figures 5 and 6, the packaging structure 12 of a conventional image sensor includes: a first transparent substrate 100, a carrier layer (Cavity) 111, a redistribution layer (Redistribution Layer) 112, a solder mask (Barrier Solder Mask) 113, and a solder mask face (Solder Mask Face) 114. The carrier layer 111 is used to accommodate the optical film layer, and the redistribution layer 112 is typically a conductive layer primarily made of Cu. The solder mask 113 forms a barrier surrounding the photosensitive area 01 to prevent the colloid used in the packaging process from entering the photosensitive area 01. The sensor chip's pads are typically distributed in a dotted pattern. After soldering the sensor chip's pads to the package structure, some gaps remain between the sensor chip and the package. To enhance the bond strength between the sensor chip and the package and prevent particulate contaminants from entering the photosensitive area, a viscous colloid, such as an epoxy resin, can be used to fill the gaps. Solder mask surface 114 protects the rewiring layer and reserves locations (i.e., first through-holes 131) where solder material (e.g., Sn balls) will be subsequently applied.

[0055] For the packaging structure of the conventional image sensor shown in Figures 5 and 6, the following steps can be used to produce it: 1. Producing a carrier layer: Using spin coating, exposure and development and other processes to prepare the carrier layer to form a cavity for subsequently accommodating the optical film layer of the image sensor. The material of the carrier layer can be resin, and the thickness is generally 30μm; 2. Producing a rewiring layer: Using electroplating, exposure and development, etching and other processes to produce the rewiring layer. The material of the rewiring layer is mainly Cu, and the thickness is generally 3-4μm; 3. Producing a solder mask: Using spin coating, exposure and development and other processes to prepare the solder mask, forming a retaining wall around the photosensitive area of ​​the image sensor to prevent the colloid used in the packaging process from entering the photosensitive area. The material of the solder mask can be resin, and the thickness is generally 10μm; 4. Producing a solder mask surface: Using spin coating, exposure and development and other processes to prepare the solder mask surface, used to protect the rewiring layer and reserve the position where the welding material is required later. The material of the solder mask surface can be resin, and the thickness is generally 15μm. The aperture of the first through hole can be 100μm.

[0056] According to a first aspect of the present disclosure, an image sensor is provided. FIG7 shows a top view of the packaging structure of an image sensor according to an embodiment of the present disclosure. FIG8 shows a cross-sectional view of the image sensor according to an embodiment of the present disclosure, wherein the cross-sectional view of the packaging structure is taken along line BB in FIG7 . FIG9-13 respectively show cross-sectional views of the packaging structure of the image sensor according to an embodiment of the present disclosure. 7-13 , the packaging structure 12 of the image sensor 10 provided by the embodiment of the present disclosure may include: a first transparent substrate 100; a packaging component 110 for packaging the sensor chip, the packaging component being arranged on a side of the first transparent substrate 100 facing the photosensitive area 01 of the sensor chip 11, and the orthographic projection of the packaging component 110 on the first transparent substrate 100 does not overlap with the orthographic projection of the photosensitive area 01 of the sensor chip on the first transparent substrate 100; and a dimming component 120 for adjusting the intensity of light incident on the photosensitive area 01 of the sensor chip, the dimming component 120 being arranged on one side of the first transparent substrate 100, and the orthographic projection of the dimming component 120 on the first transparent substrate 100 covering the orthographic projection of the photosensitive area 01 of the sensor chip 11 on the first transparent substrate 100.

[0057] 7-13 , the packaging component 110 may include: a carrier layer 111, which is arranged on a side of the first transparent substrate 100 facing the photosensitive area of ​​the sensor chip; a rewiring layer 112, which is arranged on a surface of the carrier layer 111 facing away from the first transparent substrate 100; a solder mask 113, at least a portion of which is arranged on a surface of the carrier layer 111 facing away from the first transparent substrate 100, the orthographic projection of the solder mask 113 on the first transparent substrate 100 surrounds the orthographic projection of the photosensitive area 01 on the first transparent substrate 100, and in a direction perpendicular to the first transparent substrate 100, the thickness of the portion of the solder mask 113 arranged on the surface of the carrier layer 111 facing away from the first transparent substrate 100 is greater than the thickness of the rewiring layer 112; a solder mask surface 114, which is arranged on a side of the first transparent substrate 100 facing the photosensitive area of ​​the sensor chip and covers at least a portion of the rewiring layer 112, the solder mask surface 114 including a plurality of first through holes 131. The plurality of first through holes on the solder mask surface expose the redistribution layer, and Sn ball solders may be subsequently applied to the plurality of first through holes to fan out the circuit of the sensor chip to the PCB.

[0058] In some embodiments, as shown in Figures 7-13, a portion of the solder mask 113 can be arranged on the surface of the carrier layer 111 facing away from the first transparent substrate 100, and another portion can be arranged on the surface of the redistribution layer 112 facing away from the first transparent substrate 100. In other embodiments, the solder mask can be arranged entirely on the surface of the carrier layer facing away from the first transparent substrate, as long as the thickness of the solder mask is greater than the thickness of the redistribution layer. Because the thickness of the solder mask is greater than the thickness of the redistribution layer, the solder mask can effectively prevent the colloid used in the subsequent packaging process from entering the photosensitive area.

[0059] In some embodiments, the dimming component can be an electrochromic functional layer. As shown in Figures 8-10, the dimming component 120 may include: a first transparent conductive layer (First Transparent Conductive Layer) 121, which is arranged on one side of the first transparent substrate 100; an electrochromic layer (Electrochromic Layer) 122, which is arranged on the surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100; an ion conductive layer (Ions Conductor Layer) 123, which is arranged on the surface of the electrochromic layer 122 facing away from the first transparent substrate 100; an ion storage layer (Ions Storage Layer) 124, which is arranged on the surface of the ion conductive layer 123 facing away from the first transparent substrate 100; and a second transparent conductive layer (Second Transparent Conductive Layer) 125, which is arranged on the surface of the ion storage layer 124 facing away from the first transparent substrate 100. The orthographic projections of the electrochromic layer 122 , the ion conductive layer 123 , the ion storage layer 124 and the second transparent conductive layer 125 on the first transparent substrate 100 are located inside the orthographic projection of the first transparent conductive layer 121 on the first transparent substrate 100 .

[0060] The disclosed embodiment utilizes an electrochromic dimming component to adjust the light transmittance without adjusting the aperture F value, thereby achieving clear imaging without adjusting the focal length through a voice coil motor. For high-end cameras with an aperture and variable focus, in application scenarios where the incident light intensity changes rapidly, such as drones flying against the light, the camera aperture and focal length do not need to be changed, and the transmittance can be quickly adjusted through the electrochromic functional layer to achieve fast and clear imaging. For low-cost cameras without an aperture, which cannot form images normally in environments that are too bright or too dark, the disclosed embodiment adjusts the light transmittance through the electrochromic functional layer, so that the camera without an aperture can better balance the imaging of the brightest and darkest areas, and obtain a wider dynamic range.

[0061] In some embodiments, as shown in FIG8 , the dimming component (electrochromic functional layer) 120 and the packaging component 110 are arranged on the same side of the first transparent substrate 100. The first transparent conductive layer 121 is arranged on the surface of the first transparent substrate 100 facing the photosensitive region of the sensor chip, the electrochromic layer 122 is arranged on the surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100, and the ion conductive layer 123 is arranged on the surface of the electrochromic layer 122 facing away from the first transparent substrate 100. The ion storage layer 124 is arranged on the surface of the ion conductive layer 123 facing away from the first transparent substrate 100, and the second transparent conductive layer 125 is arranged on the surface of the ion storage layer 124 facing away from the first transparent substrate 100.

[0062] The electrochromic functional layer is directly integrated with the packaging component on the same transparent substrate, without the need for an additional carrier substrate, reducing the overall thickness of the image sensor by at least 200μm.

[0063] In some embodiments, as shown in Figure 8, the carrying layer 111 includes a first carrying portion 111a and a second carrying portion 111b, the first carrying portion 111a is arranged on the surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100, and the second carrying portion 111b is arranged on the surface of the second transparent conductive layer 125 facing away from the first transparent substrate 100, the surface of the first carrying portion 111a facing away from the first transparent substrate 100 and the surface of the second carrying portion 111b facing away from the first transparent substrate 100 are flush, the second carrying portion 111b includes at least one second through hole 132, the rewiring layer 112 is arranged on the surface of the first carrying portion 111a and the second carrying portion 111b facing away from the first transparent substrate 100, and the orthographic projection of the at least one second through hole 132 on the first transparent substrate 100 is located inside the orthographic projection of the rewiring layer 112 on the first transparent substrate 100.

[0064] In some embodiments, as shown in FIG8 , the package assembly 110 further includes an electrical connection portion 115, which is disposed in the second through-hole 132 and electrically connects the second transparent conductive layer 125 to the rewiring layer 112. The second transparent conductive layer of the electrochromic functional layer and the rewiring layer of the package assembly are connected together via the electrical connection portion. Therefore, the leads for applying electrical signals to the electrochromic functional layer can share a film layer with the rewiring layer, thereby simplifying circuit wiring and simplifying the process of the entire package structure, achieving a high yield and low cost.

[0065] In some embodiments, the material of the electrical connection portion can be the same as that of the rewiring layer. The electrical connection portion and the rewiring layer can be formed together through the same process, thereby simplifying the manufacturing process.

[0066] In some embodiments, as shown in FIG8 , the solder mask surface 114 includes a first mask portion 114 a and a second mask portion 114 b. The first mask portion 114 a is disposed on a surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100, and the second mask portion 114 b is disposed on a surface of the carrier layer 111 or the rewiring layer 112 facing away from the first transparent substrate 100. The surface of the first mask portion 114 a facing away from the first transparent substrate 100 and the surface of the second mask portion 114 b facing away from the first transparent substrate 100 are flush. The first mask portion 114 a includes at least one third through hole 133. The orthographic projection of the at least one third through hole 133 on the first transparent substrate 100 is located within the orthographic projection of the first transparent conductive layer 121 on the first transparent substrate 100. The third through hole 133 exposes a portion of the first transparent conductive layer 121. A conductive material can be disposed in the third through hole to apply an electrical signal to the first transparent conductive layer.

[0067] For the packaging structure shown in Figure 8, the following steps can be used to make it: 1. Make the first transparent conductive layer: Use magnetron sputtering, slit coating and other processes to make a transparent conductive layer on one surface of the first transparent substrate. The material of the transparent conductive layer can be inorganic materials such as ITO, IZO, FTO, and the thickness can be 40-100nm, for example, 52nm. 2. Make the electrochromic layer: Use magnetron sputtering, electrochemical deposition, vapor deposition and other processes to make an inorganic electrochromic layer on the first transparent conductive layer. The material of the inorganic electrochromic layer can be NiO, V2O5, WO3, MoO3, etc. The thickness of the inorganic electrochromic layer can be 100-1200nm, for example, 200-800nm; or use slit coating, micro-concave coating or spin coating and other processes to make an organic electrochromic layer on the first transparent conductive layer. The material of the organic electrochromic layer can be PEDOT (poly 3,4-ethylenedioxythiophene), polyaniline and its various modified derivatives, etc. The thickness of the organic film layer can generally be 2 00-400nm, for example, 300nm; 3. Making an ion conductive layer: using a magnetron sputtering process to make an ion conductive layer on the electrochromic layer, the material of the ion conductive layer can be LiTaO3, LiPON, Ta2O5, LiNbO3, etc., and the thickness of the ion conductive layer is generally 50-800nm, 4. Making an ion storage layer: using a magnetron sputtering process to make an ion storage layer on the ion conductive layer, the material of the ion storage layer can be TiO2, V2O5, NiO, etc., and the thickness of the ion storage layer can generally be 100-800nm, for example, 150-500nm; 5. Making a second transparent conductive layer: using A second transparent conductive layer is made on the ion storage layer by processes such as magnetron sputtering and slit coating. The material of the second transparent conductive layer can be inorganic materials such as ITO, IZO, FTO, and the thickness can be 40-100nm, for example, 52nm; 6. Making a bearing layer: Using spin coating, exposure and development and other processes to prepare the bearing layer, forming a cavity for the subsequent optical film layer of the image sensor. The material of the bearing layer can be resin, and the thickness is generally 30μm; 7. Making a rewiring layer: Using electroplating, exposure and development, etching and other processes to make a rewiring layer, which is used to lead out the pads of the image sensor chip and the circuit of the electrochromic functional layer, and rewiring The material of the line layer is mainly Cu, and the thickness is generally 3-4μm; 8. Making a solder mask: Using spin coating, exposure and development and other processes to prepare a solder mask, forming a retaining wall around the photosensitive area of ​​the image sensor to prevent the colloid used in the packaging process from entering the photosensitive area. The material of the solder mask can be resin, and the thickness is generally 10μm; 4. Making a solder mask surface: Using spin coating, exposure and development and other processes to make a solder mask surface, it is used to protect the rewiring layer and reserve the position where the welding material will be needed later. The material of the solder mask surface can be resin, and the thickness is generally 15μm. The aperture of the first through hole can be 100μm.

[0068] In some embodiments, as shown in FIG. 9 and FIG. 10 , the dimming component (electrochromic functional layer) 120 is disposed on a side of the first transparent substrate 100 facing away from the encapsulation component 110 .

[0069] In some embodiments, as shown in Figure 9, the first transparent conductive layer 121 is arranged on the surface of the first transparent substrate 100 facing away from the photosensitive area of ​​the sensor chip, the electrochromic layer 122 is arranged on the surface of the first transparent conductive layer 121 facing away from the first transparent substrate 100, the ion conductive layer 123 is arranged on the surface of the electrochromic layer 122 facing away from the first transparent substrate 100, the ion storage layer 124 is arranged on the surface of the ion conductive layer 123 facing away from the first transparent substrate 100, and the second transparent conductive layer 125 is arranged on the surface of the ion storage layer 124 facing away from the first transparent substrate 100.

[0070] For the packaging structure shown in Figure 9, the dimming component (electrochromic functional layer) can be first made on the first transparent substrate, and then the first transparent substrate can be turned over to make the packaging component. The specific preparation process of the electrochromic functional layer and the packaging component will not be repeated here. The electrochromic functional layer is directly integrated with the packaging component on the same transparent substrate, without the need for an additional carrier substrate, effectively reducing the thickness of the packaging structure. At the same time, since the first transparent conductive layer and the second transparent conductive layer of the electrochromic functional layer are not covered by the film layer of the packaging component, there is no need to set a through hole to expose the first transparent conductive layer and the second transparent conductive layer. The electrochromic functional layer can be directly controlled, reducing the preparation process.

[0071] In some embodiments, as shown in FIG10 , the dimming component (electrochromic functional layer) 120 may further include a second transparent substrate 200 , which is bonded and fixed to the first transparent substrate 100 by an optically transparent adhesive 02. As shown in FIG10 , the first transparent conductive layer 121 is arranged on the surface of the second transparent substrate 200 facing away from the first transparent substrate 100 , the electrochromic layer 122 is arranged on the surface of the first transparent conductive layer 121 facing away from the second transparent substrate 200 , the ion conductive layer 123 is arranged on the surface of the electrochromic layer 122 facing away from the second transparent substrate 200 , the ion storage layer 124 is arranged on the surface of the ion conductive layer 123 facing away from the second transparent substrate 200 , and the second transparent conductive layer 125 is arranged on the surface of the ion storage layer 124 facing away from the second transparent substrate 200 .

[0072] For the packaging structure shown in Figure 10, the packaging component and the dimming component (electrochromic functional layer) can be made on the first transparent substrate and the second transparent substrate respectively, and then the first transparent substrate and the second transparent substrate can be bonded together. The specific bonding process can adopt the following method: use slit coating, spin coating, spray coating, micro-concave coating and other processes to make a layer of optically transparent glue on the back of any transparent substrate, and then bond the other transparent substrate to the optically transparent glue, and then anneal or UV irradiation to cure. Since the packaging component and the dimming component are made separately, the preparation processes of the two do not affect each other. At the same time, since the first transparent conductive layer and the second transparent conductive layer of the electrochromic functional layer are not covered by the film layer of the packaging component, there is no need to set a through hole to expose the first transparent conductive layer and the second transparent conductive layer. The electrochromic functional layer can be directly controlled, reducing the preparation process.

[0073] Figures 11 and 12 show the transmittance spectra of the package structure shown in Figure 8 within the visible light range. Within a drive voltage range of -0.6V to 1V, the transmittance of the sample in Figure 11 can be adjusted from 20% to 66%, and the transmittance of the sample in Figure 12 can be adjusted from 14% to 52%.

[0074] In some embodiments, as shown in FIG. 13 to FIG. 15 , the dimming component 120 may include a liquid crystal layer 500 , which is sandwiched between the third transparent substrate 300 and the fourth transparent substrate 400 .

[0075] In some embodiments, as shown in Figure 13, the dimming component 120 further includes: a third transparent conductive layer 301, which is arranged on the surface of the third transparent substrate 300 facing the liquid crystal layer 500; a first orientation layer 302, which is arranged on the surface of the third transparent conductive layer 301 facing the liquid crystal layer 500; a first polarizer 303, which is arranged on the surface of the third transparent substrate 300 facing away from the liquid crystal layer 500; a fourth transparent conductive layer 401, which is arranged on the surface of the fourth transparent substrate 400 facing the liquid crystal layer 500; a second orientation layer 402, which is arranged on the surface of the fourth transparent conductive layer 401 facing the liquid crystal layer 500; a second polarizer 403, which is arranged on the surface of the fourth transparent substrate 400 facing away from the liquid crystal layer 500; and the surface of the first polarizer 303 facing away from the third transparent substrate 300 and the surface of the first transparent substrate 100 facing away from the packaging component 110 are bonded and fixed by optically transparent adhesive 02.

[0076] The packaging structure shown in FIG13 can be manufactured by the following steps: 1. Forming a third transparent conductive layer and a fourth transparent conductive layer on one surface of a third transparent substrate and a fourth transparent substrate, respectively. The material of the transparent conductive layer can be ITO, and the thickness can be 10-100 nm, for example, 52 nm; 2. Forming a first orientation layer and a second orientation layer on the surface of the third transparent conductive layer and the fourth transparent conductive layer, respectively, and aligning them respectively. The thickness of the first orientation layer and the second orientation layer can be 10-200 nm, for example, 80 nm; 3. Forming a liquid crystal box. The thickness of the liquid crystal box is generally 3 μm, and the thickness range is based on The liquid crystal properties can be adjusted, and the thickness can be 1-25μm; 4. Attach a first polarizer and a second polarizer to the surfaces of the third transparent substrate and the fourth transparent substrate facing away from the liquid crystal layer, respectively. The thickness of the polarizer ranges from 50-200μm, for example, 70-80μm; 5. Make a packaging component, and the specific production steps are not repeated here; 6. Bond the dimming component and the packaging component, and use slit coating, spin coating, spray coating, micro-concave coating and other processes to make a layer of optically transparent adhesive on the back of the first transparent substrate or the third transparent substrate, and then bond another transparent substrate to the optically transparent adhesive, and then anneal or UV cure.

[0077] By using the liquid crystal layer as the dimming functional layer, the transmittance can be adjusted in real time, and the transmittance adjustment range is wider.

[0078] In some embodiments, the third transparent substrate and the fourth transparent substrate are thin glass substrates. The thickness of the thin glass may range from 0.1 mm to 1.1 mm. Preferably, thin glass with a thickness of 0.25 mm may be selected.

[0079] In some embodiments, the third transparent substrate and the fourth transparent substrate are flexible substrates, and the material of the flexible substrates may be, for example, PET, CPI, PA, etc. The thickness of the flexible substrate may be thinner than that of the glass substrate, thereby further reducing the overall thickness of the device.

[0080] In some embodiments, the first polarizer and the second polarizer may be rigid polarizers, so that the third transparent substrate and the fourth transparent substrate may be omitted, thereby further reducing the overall thickness of the device.

[0081] In some embodiments, as shown in FIG14 , the dimming component further comprises: a first nanograting array 304 disposed on the surface of the third transparent substrate 300 facing the liquid crystal layer 500, the first nanograting array comprising a plurality of nanowires extending in a first direction; and a second nanograting array 404 disposed on the surface of the fourth transparent substrate 400 facing the liquid crystal layer 500, the second nanograting array 404 comprising a plurality of nanowires extending in a second direction, wherein the first direction is perpendicular to the second direction. In this embodiment, the first nanograting array and the second nanograting array act as polarizers, and the principle is as follows: TE waves parallel to the wire grid drive electrons in the metal wire to oscillate along the length of the metal wire, where the electrons collide with atoms in the metal lattice, causing the TE waves to attenuate and radiate; TM waves driven perpendicular to the wire grid limit the space for electrons in the metal wire to move, reducing attenuation and radiation, allowing the TM waves to pass through the metal wire with little change. Two wire-grid polarizers are fabricated orthogonally, with the central liquid crystal layer using twisted nematic liquid crystals. The pitch is set so that the two substrates are rotated 90 degrees. Light passes through the first nano-grating array for polarization screening, and after optical rotation by the liquid crystal layer, it is emitted through the second nano-grating array. This allows the light transmittance to be adjusted by adjusting the deflection angle of the liquid crystal layer.

[0082] In some embodiments, as shown in FIG14 , the dimming component may further include: a fifth transparent conductive layer 305, which is arranged on the surface of the third transparent substrate 300 facing the liquid crystal layer 500 and fills the gaps between the multiple nanowires of the first nanograting array 304; a third orientation layer 306, which is arranged on the surface of the fifth transparent conductive layer 305 facing the liquid crystal layer 500; a sixth transparent conductive layer 405, which is arranged on the surface of the fourth transparent substrate 400 facing the liquid crystal layer 500 and fills the gaps between the multiple nanowires of the second nanograting array 404; and a fourth orientation layer 406, which is arranged on the surface of the sixth transparent conductive layer 405 facing the liquid crystal layer 500.

[0083] In the embodiment shown in FIG. 14 , the third transparent substrate 300 and the first transparent substrate 100 are bonded and fixed together by optically transparent adhesive.

[0084] The packaging structure shown in FIG14 can be manufactured using the following steps: 1. Fabricate a first nanograting array and a second nanograting array on a third transparent substrate and a fourth transparent substrate, respectively: Use spin coating, slit coating, or other processes to apply a nanoimprint layer of a material such as a polymeric organic silicon compound, and then use a nanoimprint soft film to imprint the nanograting on the surface of the material; the grating dimensions are: line width of 10nm-1000nm, wire grid pitch of 20-2000nm, and wire grid height of 10-1000nm. The specific parameters can be adjusted according to the minimum and maximum wavelengths of the required polarization and the required transmittance; 2. Fabricate a transparent conductive layer and an alignment layer on the third and fourth substrates, respectively, and align them; 3. Fabricate a liquid crystal cell; 4. Fabricate a packaging component on the first transparent substrate. The specific steps are the same as above and will not be repeated here; 5. Bond the dimming component to the packaging component.

[0085] In some embodiments, as shown in FIG15 , the third transparent substrate and the first transparent substrate are the same transparent substrate, that is, the dimming component and the packaging component share one substrate, which can reduce the thickness of one substrate and further reduce the overall thickness of the device.

[0086] The packaging structure shown in FIG15 can be manufactured using the following steps: 1. A packaging component is formed on a first transparent substrate. The specific steps are the same as above and will not be repeated here. 2. A nanoimprint layer is formed on the surface of the first transparent substrate facing away from the packaging component to form a first nanograting array, and a fifth transparent conductive layer and a third alignment layer are formed and oriented. 3. A nanoimprint layer is formed on a fourth transparent substrate to form a second nanograting array, and a sixth transparent conductive layer and a fourth alignment layer are formed and oriented. 4. A liquid crystal box is formed.

[0087] In the embodiment of using a liquid crystal layer for dimming, the liquid crystal layer may be twisted nematic liquid crystal.

[0088] In an embodiment of the present disclosure, the image sensor may be a CMOS image sensor.

[0089] According to a second aspect of the present disclosure, a camera module is provided, comprising the image sensor provided by any of the aforementioned embodiments, and a lens module located on the light incident side of the image sensor.

[0090] According to a third aspect of the present disclosure, an electronic device is provided, comprising the aforementioned camera module.

[0091] According to a fourth aspect of the present disclosure, a method for manufacturing a packaging structure for an image sensor provided by any of the aforementioned embodiments is provided. The method comprises: providing a first transparent substrate; preparing a dimming component on one side of the first transparent substrate, wherein the orthographic projection of the dimming component on the first transparent substrate overlaps the orthographic projection of the photosensitive area of ​​the sensor chip of the image sensor on the first transparent substrate; and preparing a packaging component on one side of the first transparent substrate, wherein the orthographic projection of the packaging component on the first transparent substrate does not overlap with the orthographic projection of the photosensitive area of ​​the sensor chip of the image sensor on the first transparent substrate.

[0092] In some embodiments, preparing a packaging component on one side of the first transparent substrate includes: preparing a carrier layer on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip; preparing a rewiring layer on the surface of the carrier layer facing away from the first transparent substrate; preparing a solder mask, wherein the solder mask is at least partially arranged on the surface of the carrier layer facing away from the first transparent substrate, the orthographic projection of the solder mask on the first transparent substrate surrounds the orthographic projection of the photosensitive area on the first transparent substrate, and in the direction perpendicular to the first transparent substrate, the thickness of the portion of the solder mask arranged on the surface of the carrier layer facing away from the first transparent substrate is greater than the thickness of the rewiring layer; preparing a solder mask surface on the side of the first transparent substrate facing the photosensitive area of ​​the sensor chip, the solder mask surface covering at least a portion of the rewiring layer, and the solder mask surface including a plurality of first through holes.

[0093] In some embodiments, preparing a dimming component on one side of the first transparent substrate includes: preparing a first transparent conductive layer on one side of the first transparent substrate; preparing an electrochromic layer on the surface of the first transparent conductive layer facing away from the first transparent substrate; preparing an ion conductive layer on the surface of the electrochromic layer facing away from the first transparent substrate; preparing an ion storage layer on the surface of the ion conductive layer facing away from the first transparent substrate; and preparing a second transparent conductive layer on the surface of the ion storage layer facing away from the first transparent substrate, wherein the orthographic projections of the electrochromic layer, the ion conductive layer, the ion storage layer, and the second transparent conductive layer on the first transparent substrate are located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate.

[0094] In some embodiments, preparing a dimming component on one side of the first transparent substrate includes: preparing a liquid crystal layer on one side of the first transparent substrate, wherein the liquid crystal layer is sandwiched between a third transparent substrate and a fourth transparent substrate.

[0095] In the accompanying drawings, the thickness of certain areas and layers may be exaggerated for clarity. The same reference numerals in the figures represent the same or similar structures, and thus their detailed descriptions will be omitted. The described features, structures or characteristics may be combined in one or more embodiments in any suitable manner. In the following description, many specific details are provided so as to provide a full understanding of the embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure can be practiced without one or more of the specific details, or other methods, components, materials, etc. can be adopted. In other cases, well-known structures, materials or operations are not shown or described in detail to avoid obscuring the main technical ideas of the present disclosure.

[0096] Spatial relative terms such as "row", "column", "up", "down", "left", "right", etc. may be used herein to describe the relationship between an element or feature and another element or feature as illustrated in the figure for ease of description. It will be understood that these spatial relative terms are intended to cover different orientations of the device in use or operation in addition to the orientation depicted in the figure. For example, if the device in the figure is flipped, the element described as "below other elements or features" or "below other elements or features" or "below other elements or features" will be oriented as "above other elements or features", and the element described as "to the left of other elements" will be oriented as "to the right of other elements". Therefore, the exemplary term "below..." can cover both the orientations of "above..." and "below...", and the exemplary term "to the left of..." can cover both the orientations of "to the left of..." and "to the right of...". The device can be oriented in other ways (rotated 90 degrees or in other orientations) and the spatial relative descriptors used in this article are interpreted accordingly. In addition, it will also be understood that when a layer is referred to as "between two layers", it can be the only layer between the two layers, or there can be one or more intermediate layers.

[0097] In the description of this specification, the description with reference to the terms "one embodiment", "another embodiment" and the like means that the specific features, structures, materials or characteristics described in conjunction with the embodiment are included in at least one embodiment of the present disclosure. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in a suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine the different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are mutually contradictory. In addition, it should be noted that in this specification, although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts in this document, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another region, layer or part.

[0098] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. An image sensor, comprising a sensor chip and a packaging structure, wherein the packaging structure include: a first transparent substrate; A packaging component, used for packaging the sensor chip, the packaging component is arranged on a side of the first transparent substrate facing the photosensitive area of ​​the sensor chip, and the orthographic projection of the packaging component on the first transparent substrate does not overlap with the orthographic projection of the photosensitive area of ​​the sensor chip on the first transparent substrate; as well as A dimming component is used to adjust the intensity of light incident on a photosensitive area of ​​a sensor chip. The dimming component is arranged on one side of the first transparent substrate, and the orthographic projection of the dimming component on the first transparent substrate covers the orthographic projection of the photosensitive area of ​​the sensor chip on the first transparent substrate.

2. The image sensor according to claim 1, wherein the dimming component and the packaging component are arranged on the same side of the first transparent substrate, the dimming component includes a first transparent conductive layer, and the first transparent conductive layer is arranged on a surface of the first transparent substrate facing a photosensitive area of ​​the sensor chip.

3. The image sensor according to claim 1, wherein the packaging component include: A carrier layer, which is arranged on a side of the first transparent substrate facing the photosensitive area of ​​the sensor chip; a rewiring layer arranged on a surface of the carrier layer facing away from the first transparent substrate; a solder resist mask, at least a portion of which is arranged on a surface of the carrier layer away from the first transparent substrate, an orthographic projection of the solder resist mask on the first transparent substrate surrounds an orthographic projection of the photosensitive region on the first transparent substrate, and in a direction perpendicular to the first transparent substrate, a thickness of a portion of the solder resist mask arranged on the surface of the carrier layer away from the first transparent substrate is greater than a thickness of the rewiring layer; A solder mask surface is arranged on a side of the first transparent substrate facing the photosensitive area of ​​the sensor chip and covers at least a portion of the rewiring layer, wherein the solder mask surface includes a plurality of first through holes.

4. The image sensor according to claim 3, wherein the dimming component further comprises a second conductive layer insulated from the first conductive layer, the second conductive layer being arranged on a side of the first conductive layer facing away from the first transparent substrate, the bearing layer comprising a first bearing portion and a second bearing portion, the first bearing portion being arranged on a surface of the first transparent conductive layer facing away from the first transparent substrate, the second bearing portion being arranged on a surface of the second transparent conductive layer facing away from the first transparent substrate, the surface of the first bearing portion facing away from the first transparent substrate and the surface of the second bearing portion facing away from the first transparent substrate being flush, the second bearing portion comprising at least one second through hole, the rewiring layer being arranged on surfaces of the first bearing portion and the second bearing portion facing away from the first transparent substrate, the orthographic projection of the at least one second through hole on the first transparent substrate being located inside the orthographic projection of the rewiring layer on the first transparent substrate. 5 . The image sensor according to claim 4 , wherein the package assembly further comprises an electrical connection portion which is arranged in the second through hole and electrically connects the second transparent conductive layer and the rewiring layer. The image sensor according to claim 5 , wherein a material of the electrical connection portion is the same as a material of the rewiring layer.

7. The image sensor according to claim 3, wherein the solder mask surface includes a first mask portion and a second mask portion, the first mask portion is arranged on the surface of the first transparent conductive layer facing away from the first transparent substrate, the second mask portion is arranged on the surface of the supporting layer or the rewiring layer facing away from the first transparent substrate, the surface of the first mask portion facing away from the first transparent substrate and the surface of the second mask portion facing away from the first transparent substrate are flush, the first mask portion includes at least one third through hole, and the orthographic projection of the at least one third through hole on the first transparent substrate is located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate. 8 . The image sensor according to claim 1 , wherein the dimming component is arranged on a side of the first transparent substrate facing away from the packaging component. 9 . The image sensor according to claim 8 , wherein the dimming component comprises a first transparent conductive layer, and the first transparent conductive layer is arranged on a surface of the first transparent substrate facing away from the light-sensing region of the sensor chip.

10. The image sensor according to claim 8, wherein the dimming component further comprises a second transparent substrate, the second transparent substrate is bonded and fixed to the first transparent substrate by optically transparent adhesive, and the first transparent conductive layer is arranged on a surface of the second transparent substrate facing away from the first transparent substrate.

11. The image sensor according to any one of claims 2-3 and 9-10, wherein the dimming component further comprises: include: an electrochromic layer disposed on a surface of the first transparent conductive layer facing away from the first transparent substrate; an ion conductive layer disposed on a surface of the electrochromic layer facing away from the first transparent substrate; an ion storage layer disposed on a surface of the ion conductive layer facing away from the first transparent substrate; a second transparent conductive layer disposed on a surface of the ion storage layer facing away from the first transparent substrate, The orthographic projections of the electrochromic layer, the ion conductive layer, the ion storage layer and the second transparent conductive layer on the first transparent substrate are located inside the orthographic projection of the first transparent conductive layer on the first transparent substrate. 12 . The image sensor according to claim 1 , wherein the dimming component comprises a liquid crystal layer, and the liquid crystal layer is sandwiched between the third transparent substrate and the fourth transparent substrate.

13. The image sensor according to claim 12, wherein the dimming component further comprises: include: a third transparent conductive layer disposed on a surface of the third transparent substrate facing the liquid crystal layer; A first alignment layer is arranged on a surface of the third transparent conductive layer facing the liquid crystal layer; A first polarizer is arranged on a surface of the third transparent substrate facing away from the liquid crystal layer; a fourth transparent conductive layer, arranged on a surface of the fourth transparent substrate facing the liquid crystal layer; a second alignment layer disposed on a surface of the fourth transparent conductive layer facing the liquid crystal layer; A second polarizer is arranged on a surface of the fourth transparent substrate facing away from the liquid crystal layer; In addition, a surface of the first polarizer facing away from the third transparent substrate and a surface of the first transparent substrate facing away from the packaging component are bonded and fixed by optically transparent adhesive. 14 . The image sensor according to claim 12 , wherein the third transparent substrate and the fourth transparent substrate are thin glass substrates. 15 . The image sensor according to claim 12 , wherein the third transparent substrate and the fourth transparent substrate are flexible substrates.

16. The image sensor according to claim 12, wherein the dimming component further comprises: include: A first nano-grating array is arranged on a surface of the third transparent substrate facing the liquid crystal layer, wherein the first nano-grating array comprises a plurality of nano-wires extending along a first direction; as well as a second nano-grating array arranged on a surface of the fourth transparent substrate facing the liquid crystal layer, wherein the second nano-grating array comprises a plurality of nano-wires extending along a second direction, The first direction is perpendicular to the second direction.

17. The image sensor according to claim 16, wherein the dimming component further comprises: include: a fifth transparent conductive layer, which is arranged on a surface of the third transparent substrate facing the liquid crystal layer and fills gaps between the plurality of nanowires of the first nanograting array; a third alignment layer arranged on a surface of the fifth transparent conductive layer facing the liquid crystal layer, a sixth transparent conductive layer, which is arranged on a surface of the fourth transparent substrate facing the liquid crystal layer and fills gaps between the plurality of nanowires of the second nanograting array; A fourth alignment layer is arranged on a surface of the sixth transparent conductive layer facing the liquid crystal layer. 18 . The image sensor according to claim 16 , wherein the third transparent substrate is fixed to the first transparent substrate by bonding with an optically transparent adhesive. 19 . The image sensor according to claim 16 , wherein the third transparent substrate and the first transparent substrate are the same transparent substrate.

20. The image sensor according to any one of claims 12 to 19, wherein the liquid crystal layer uses twisted nematic liquid crystal.

21. The image sensor according to any one of claims 1 to 20, wherein the image sensor is a CMOS image sensor.

22. A camera module, comprising an image sensor according to any one of claims 1 to 21, and a lens module located on the light incident side of the image sensor.

23. An electronic device comprising the camera module according to claim 22.

24. A method for manufacturing a packaging structure of an image sensor according to any one of claims 1 to 23, in, The method comprises: providing a first transparent substrate; A dimming component is prepared on one side of the first transparent substrate, wherein the orthographic projection of the dimming component on the first transparent substrate covers the orthographic projection of the photosensitive area of ​​the sensor chip of the image sensor on the first transparent substrate and A packaging component is prepared on one side of the first transparent substrate, and the orthographic projection of the packaging component on the first transparent substrate does not overlap with the orthographic projection of the photosensitive area of ​​the sensor chip of the image sensor on the first transparent substrate.

Images