Temperature control device and temperature control method for exhaust pipe

Abstract

The invention relates to the technical field of semiconductors, in particular to a temperature control device and a temperature control method for an exhaust pipe, and solves the problem that the exhaust pipe is blocked due to the fact that the temperature of the exhaust pipe is too low when semiconductor equipment is subjected to a process. The temperature control device of the exhaust pipe comprises a heating assembly, a temperature detection assembly, a cooling assembly and a control assembly. The temperature detection assembly is used for detecting the temperature of the exhaust pipe, the heating assembly heats the exhaust pipe, the cooling assembly cools the exhaust pipe, and the control assembly controls the heating assembly and the cooling assembly to work or not work. According to the temperature control device of the exhaust pipe, the control assembly is used for controlling the heating assembly and the cooling assembly to work or not work in time so as to reasonably regulate and control the temperature of the exhaust pipe, the temperature of the exhaust pipe can be kept within a proper temperature range, and therefore the situation that the temperature of the exhaust pipe is too low and consequently the exhaust pipe is blocked is avoided; and the heating assembly is damaged due to over-high temperature of the exhaust pipe.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a temperature control device and a temperature control method for an exhaust pipe. Background Art

[0002] Semiconductor materials (such as wafers, etc.) usually need to go through production processes such as etching, coating, and testing. Among them, the more mature etching, coating and other processes mostly use plasma etching (Inductively Coupled Plasma, ICP or Capavitively Coupled Plasma, CCP) and plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD). During the deposition and etching process, chemical reactions will occur to produce some excess reactants. During the process, excess reaction gases and reaction by-products enter the exhaust pipe from the chamber of the semiconductor equipment and are discharged from the semiconductor equipment through the exhaust pipe. If the temperature of the exhaust pipe is too low, the excess reaction gases and reaction by-products will adhere to the inner wall of the exhaust pipe in large quantities and gradually cause the exhaust pipe to be blocked. Once the exhaust pipe is blocked, it will affect the pressure control of the chamber of the semiconductor equipment, making the process unstable, affecting the process performance of deposition or etching, and easily causing the reaction gas and reaction by-products to flow back into the chamber of the semiconductor equipment, thereby affecting the cleanliness of the wafer surface. More seriously, if the process causes shutdown, the wafer will be scrapped, resulting in economic losses.

[0003] Therefore, during the process, the temperature of the exhaust pipe is usually kept above a certain temperature to avoid clogging of the exhaust pipe due to excessively low temperature of the exhaust pipe. Summary of the invention

[0004] In view of this, the embodiments of the present disclosure provide a temperature control device and a temperature control method for an exhaust pipe, which solve the problem that the exhaust pipe is blocked due to the excessively low temperature of the exhaust pipe when the semiconductor equipment is undergoing a process.

[0005] In a first aspect, an embodiment of the present disclosure provides a temperature control device for an exhaust pipe, which is applied to a semiconductor device, wherein the semiconductor device at least comprises a reaction chamber and an exhaust pipe, wherein exhaust gas is generated after a reaction occurs inside the reaction chamber, the exhaust pipe is connected to the bottom of the reaction chamber and can discharge the exhaust gas, and the temperature control device for the exhaust pipe is configured to control the temperature of the exhaust pipe; wherein the temperature control device for the exhaust pipe comprises: a heating component, which can be mounted on the exhaust pipe and is configured to heat the exhaust pipe; a temperature detection component, which is connected to the exhaust pipe and is configured to detect the temperature of the exhaust pipe; a cooling component, which is connected to the heating component and is configured to cool the exhaust pipe; and a control component, which is respectively communicated with the heating component, the temperature detection component and the cooling component and is configured to control the operation of the heating component and the cooling component.

[0006] In some embodiments, the control component controls the heating component to operate when the temperature detected by the temperature detection component is lower than the first target temperature, and controls the heating component not to operate when the temperature detected by the temperature detection component is higher than the second target temperature; the control component controls the cooling component to operate when the temperature detected by the temperature detection component is higher than the third target temperature; wherein the first target temperature, the second target temperature and the third target temperature increase sequentially.

[0007] In some embodiments, when the reaction chamber in the semiconductor device performs a first process, the control component instructs the heating component to work and receives the real-time temperature emitted by the temperature detection component in real time; when the reaction chamber in the semiconductor device performs a second process, the control component instructs the heating component not to work, receives the real-time temperature emitted by the temperature detection component in real time, and instructs the cooling component not to work or to work; wherein the second process is located after the first process, the first process includes at least one of a deposition process and an etching process on the surface of the wafer, and the second process includes a plasma cleaning process for the reaction chamber and / or the exhaust pipe.

[0008] In some embodiments, when the reaction chamber in the semiconductor device performs the second process, the control component is configured to receive a first signal emitted by the temperature detection component and issue a first instruction to the cooling component, wherein the first signal is used to indicate that the temperature of the exhaust pipe is less than a first preset temperature, and the first instruction is used to indicate that the cooling component is not working; or, receive a second signal emitted by the temperature detection component and issue a second instruction to the cooling component, wherein the second signal is used to indicate that the temperature of the exhaust pipe is equal to or greater than the first preset temperature, and the second instruction is used to indicate that the cooling component is turned on.

[0009] In some embodiments, the heating assembly includes: a heating sleeve, which is sleeved on the exhaust pipe and extends along the extension direction of the exhaust pipe; wherein the heating sleeve has a plurality of accommodating spaces, the plurality of accommodating spaces are arranged in sequence along the circumferential direction of the heating sleeve, and the accommodating spaces extend along the extension direction of the heating sleeve; the heating sleeve has a temperature tolerance of between 300°C and 400°C, and preferably, the heating sleeve has a temperature tolerance of 350°C; a plurality of heating rods, which are respectively arranged in the plurality of accommodating spaces, the heating rods extend along the extension direction of the heating sleeve, and the heating rods are electrically connected to a power supply.

[0010] In some embodiments, the cooling component includes: a cooling pipe, which is sleeved on the heating component and has a medium input port and a medium output port; a cooling medium supply component, which is arranged outside the reaction chamber and is respectively connected to the medium input port and the medium output port, and is configured to provide a cooling medium, and the cooling medium can enter the cooling pipe from the medium input port and flow out of the cooling pipe from the medium output port to take away part of the heat of the heating component and the exhaust pipe.

[0011] In some embodiments, the cooling component further includes: at least two cooling medium delivery pipelines, one of the cooling medium delivery pipelines is configured to connect the medium input port with the cooling medium supply component, and the other of the cooling medium delivery pipelines is configured to connect the medium output port with the cooling medium supply component; wherein the cooling medium delivery pipeline can be sealed and connected to the reaction chamber.

[0012] In some embodiments, the cooling medium is in a gaseous state or a liquid state.

[0013] In a second aspect, an embodiment of the present disclosure provides a temperature control method for an exhaust pipe, which is applied to a semiconductor device, wherein the semiconductor device comprises at least a reaction chamber and an exhaust pipe, wherein exhaust gas is generated after a reaction occurs inside the reaction chamber, and the exhaust pipe is connected to the bottom of the reaction chamber and can discharge the exhaust gas, wherein the temperature control method for the exhaust pipe is applied to the temperature control device for the exhaust pipe described in the first aspect, wherein the temperature control device for the exhaust pipe is configured to control the temperature of the exhaust pipe; the temperature control method for the exhaust pipe comprises: when a temperature detected by a temperature detection component of the temperature control device of the exhaust pipe is lower than a first target temperature, a control component of the temperature control device of the exhaust pipe controls a heating component of the temperature control device of the exhaust pipe to operate, and when the temperature detected by the temperature detection component is lower than a first target temperature, a heating component of the temperature control device of the exhaust pipe is controlled to operate. When the temperature detected by the temperature detection component is greater than the second target temperature, the heating component is controlled not to work; when the temperature detected by the temperature detection component is greater than the third target temperature, the control component controls the cooling component of the temperature control device of the exhaust pipe to work; wherein the first target temperature, the second target temperature and the third target temperature increase sequentially; or, the target process performed inside the reaction chamber is detected, and the target process is the first process or the second process; when it is the first process, the heating component is instructed to work, and the real-time temperature emitted by the temperature detection component is received in real time; when it is the second process, the heating component is instructed not to work, and the real-time temperature emitted by the temperature detection component is received in real time, and the cooling component of the temperature control device of the exhaust pipe is instructed not to work or to work.

[0014] In some embodiments, when it is the second process, the temperature control method of the exhaust pipe also includes: receiving a first signal emitted by the temperature detection component, and issuing a first instruction to the cooling component, wherein the first signal is used to indicate that the temperature of the exhaust pipe is less than a first preset temperature, and the first instruction is used to indicate that the cooling component is not working; or, receiving a second signal emitted by the temperature detection component, and issuing a second instruction to the cooling component, wherein the second signal is used to indicate that the temperature of the exhaust pipe is equal to or greater than the first preset temperature, and the second instruction is used to indicate that the cooling component is turned on.

[0015] In some embodiments, after the second instruction is issued to the cooling component, it also includes: issuing a third instruction to the cooling component, the third instruction is used to instruct the cooling component to gradually increase the flow rate of the cooling medium provided; receiving the real-time temperature issued by the temperature detection component in real time; after the flow rate of the cooling medium reaches a first flow rate, judging whether the real-time temperature is greater than a second preset temperature, and the second preset temperature is greater than the first preset temperature; when the real-time temperature is greater than the second preset temperature, issuing a fourth instruction to the cooling component, wherein the fourth instruction is used to instruct the cooling component to gradually increase the flow rate of the cooling medium.

[0016] In some embodiments, the temperature control method of the exhaust pipe also includes: after the flow rate of the cooling medium reaches a second flow rate, determining whether the real-time temperature is less than or equal to a third preset temperature, and the third preset temperature is greater than the second preset temperature; when the real-time temperature is less than or equal to the third preset temperature, issuing a fifth instruction to the cooling component, wherein the fifth instruction is used to indicate that the flow rate of the cooling medium provided by the cooling component remains unchanged.

[0017] In some embodiments, the first preset temperature is 150°C; and / or the first flow rate range is 1L / min-20L / min; and / or the second preset temperature range is 200°C to 300°C; and / or the second flow rate range is 15L / min-30L / min; and / or the third preset temperature is 350°C.

[0018] In some embodiments, the first flow rate includes 10 L / min, 13 L / min or 15 L / min; and / or, the second preset temperature includes 200°C, 230°C or 250°C; and / or, the second flow rate includes 20 L / min, 23 L / min or 25 L / min.

[0019] The temperature control device of the exhaust pipe provided in the embodiment of the present disclosure includes a heating component, a temperature detection component, a cooling component and a control component. The temperature detection component is used to detect the temperature of the exhaust pipe, the heating component heats the exhaust pipe, the cooling component cools the exhaust pipe, and the control component controls the heating component and the cooling component to work or not work. The temperature control device of the exhaust pipe uses the control component to control the heating component and the cooling component to work or not work in time, so as to reasonably regulate the temperature of the exhaust pipe, so that the temperature of the exhaust pipe is maintained within a suitable temperature range, thereby avoiding the exhaust pipe being blocked due to the exhaust pipe being too low, and the heating component being damaged due to the exhaust pipe being too high. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 Shown is a schematic structural diagram of a semiconductor device provided in one embodiment of the present disclosure.

[0021] Figure 2 Shown is a side view of a heating assembly and an exhaust pipe provided in one embodiment of the present disclosure.

[0022] Figure 3 Shown Figure 2 Front view of the heating assembly and exhaust pipe shown.

[0023] Figure 4 Shown is a schematic structural diagram of a reaction chamber, a heating assembly, a cooling assembly and an exhaust pipe provided in one embodiment of the present disclosure.

[0024] Figure 5 Shown is a side view of a heating assembly, a cooling duct, and an exhaust pipe provided in accordance with an embodiment of the present disclosure.

[0025] Figure 6 Shown is a flow chart of a temperature control method for an exhaust pipe provided in an embodiment of the present disclosure.

[0026] Figure 7 Shown is a flow chart of a temperature control method for an exhaust pipe provided in another embodiment of the present disclosure.

[0027] Figure 8 Shown is a flow chart of a temperature control method for an exhaust pipe provided in another embodiment of the present disclosure.

[0028] Fig. 9 Shown is a flow chart of a temperature control method for an exhaust pipe provided in another embodiment of the present disclosure.

[0029] Fig.10 The figure is a schematic diagram showing the relationship between the flow rate of the cooling medium and the real-time temperature of the exhaust pipe in the temperature control method of the exhaust pipe provided in one embodiment of the present disclosure.

[0030] Fig.11 Shown is a flow chart of a temperature control method for an exhaust pipe provided in another embodiment of the present disclosure.

[0031] Reference numerals:

[0032] 1. Semiconductor equipment; 10. Temperature control device for exhaust pipe; 100. Heating component; 110. Heating sleeve; 1101. Accommodation space; 120. Heating rod; 200. Temperature detection component; 300. Cooling component; 310. Cooling pipeline; 3101. Medium input port; 3102. Medium output port; 320. Cooling medium supply component; 330. Cooling medium delivery pipeline; 400. Control component; 20. Reaction chamber; 30. Exhaust pipe. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0034] Figure 1 FIG. 1 is a schematic diagram of the structure of a semiconductor device provided by an embodiment of the present disclosure. Figure 1As shown, the temperature control device 10 of the exhaust pipe is applied to a semiconductor device 1, and the semiconductor device 1 at least includes a reaction chamber 20 and an exhaust pipe 30. After the reaction occurs inside the reaction chamber 20, exhaust gas is generated. The exhaust pipe 30 is connected to the bottom of the reaction chamber 20 and can discharge the exhaust gas. The temperature control device 10 of the exhaust pipe is configured to control the temperature of the exhaust pipe 30. The temperature control device 10 of the exhaust pipe includes a heating component 100, a temperature detection component 200, a cooling component 300 and a control component 400. The heating component 100 can be mounted on the exhaust pipe 30 and is configured to heat the exhaust pipe 30. The temperature detection component 200 is connected to the exhaust pipe 30 and is configured to detect the temperature of the exhaust pipe 30. The cooling component 300 is connected to the heating component 100 and is configured to cool the exhaust pipe 30. The control component 400 is respectively connected to the heating component 100, the temperature detection component 200 and the cooling component 300 for communication, and is configured to control the heating component 100 and the cooling component 300 to work.

[0035] The temperature control device 10 of the exhaust pipe provided in the embodiment of the present disclosure includes a heating component 100, a temperature detection component 200, a cooling component 300 and a control component 400. The temperature detection component 200 is used to detect the temperature of the exhaust pipe 30, the heating component 100 heats the exhaust pipe 30, the cooling component 300 cools the exhaust pipe 30, and the control component 400 controls the heating component 100 and the cooling component 300 to work or not work. The temperature control device 10 of the exhaust pipe uses the control component 400 to control the heating component 100 and the cooling component 300 to work or not work in time, so as to reasonably regulate the temperature of the exhaust pipe 30, so that the temperature of the exhaust pipe 30 is maintained within a suitable temperature range, thereby avoiding the exhaust pipe 30 being blocked due to the temperature being too low, and the heating component 100 being damaged due to the temperature being too high.

[0036] Illustratively, the heating assembly 100 may include a heating rod, a heating wire, a heating tube, etc.

[0037] For example, the cross-section of the exhaust pipe 30 may be in the shape of a circular ring, a rectangular ring, or other polygonal rings, etc. For example, the cross-section of the heating assembly 100 may be in the shape of a circular ring, a rectangular ring, or other polygonal rings, etc.

[0038] Exemplarily, the cooling assembly 300 may be disposed on a side of the heating assembly 100 away from the exhaust pipe 30, or may be disposed between the heating assembly 100 and the exhaust pipe 30. Exemplarily, the cooling assembly 300 may be disposed around the heating assembly 100 along the surrounding direction of the heating assembly 100, or may extend along the extension direction of the heating assembly 100, or may be disposed around the heating assembly 100 along the surrounding direction of the heating assembly 100 and extend along the extension direction of the heating assembly 100. Figure 1The cooling assembly 300 is shown to be disposed on a side of the heating assembly 100 away from the exhaust pipe 30 .

[0039] Regarding when to start or stop the heating component 100 and the cooling component 300, this embodiment specifically provides two solutions, one of which is to control according to the temperature of the exhaust pipe 30, and the other is to control according to the process.

[0040] In some embodiments, when the control is performed according to the temperature of the exhaust pipe 30, the control component 400 directly starts or stops the heating component 100 or the cooling component 300 according to the temperature of the exhaust pipe 30. Specifically, when the temperature detected by the temperature detection component 200 is lower than the first target temperature, the control component 400 controls the heating component 100 to work, and when the temperature detected by the temperature detection component 200 is higher than the second target temperature, the control component 400 controls the heating component 100 not to work. When the temperature detected by the temperature detection component 200 is higher than the third target temperature, the control component 400 controls the cooling component 300 to work.

[0041] The first target temperature may be between 20°C and 100°C, such as 50°C, 60°C, etc., and may be set as required. This embodiment does not fix a specific value.

[0042] When the temperature detection component 200 detects that the temperature of the exhaust pipe 30 is lower than the first target temperature, the control component 400 starts the heating component 100 to heat the exhaust pipe 30 so that the temperature of the exhaust pipe 30 is always maintained above the first target temperature.

[0043] The second target temperature may be between 100° C. and 150° C., such as 100° C., 120° C., etc., and may be set as required. This embodiment does not fix a specific value.

[0044] When the temperature detection component 200 detects that the temperature of the exhaust pipe 30 is greater than the second target temperature, the control component 400 stops the heating component 100 from working.

[0045] The third target temperature may be above 150° C., such as 150° C., 250° C., 300° C., etc., and may be set as required. This embodiment does not fix a specific value.

[0046] When the temperature detection component 200 detects that the temperature of the exhaust pipe 30 is greater than the third target temperature, the control component 400 controls the cooling component 300 to work; when the temperature detection component 200 detects that the temperature of the exhaust pipe 30 is less than the third target temperature, the control component 400 controls the cooling component 300 not to work.

[0047] Among them, the first target temperature, the second target temperature, and the third target temperature increase in sequence.

[0048] In some embodiments, when regulation is performed according to the process, specifically, when the reaction chamber 20 in the semiconductor device 1 performs the first process, the control component 400 instructs the heating component 100 to work and receives the real-time temperature emitted by the temperature detection component 200 in real time.

[0049] When the reaction chamber 20 in the semiconductor device 1 performs the second process, the control component 400 instructs the heating component 100 not to work, receives the real-time temperature sent by the temperature detection component 200 in real time, and instructs the cooling component 300 not to work or to work. The second process is located after the first process, the first process includes at least one of a deposition process and an etching process on the surface of the wafer, and the second process includes a plasma cleaning process for the reaction chamber 20, or the exhaust pipe 30, or the reaction chamber 20 and the exhaust pipe 30.

[0050] Exemplarily, when the reaction chamber 20 in the semiconductor device 1 performs the first process, the heating assembly 100 heats the temperature of the exhaust pipe 30 to a preset temperature. Exemplarily, the preset temperature can be set according to actual production needs. Exemplarily, the preset temperature can be 150° C., 160° C., etc.

[0051] In some embodiments, when the reaction chamber 20 in the semiconductor device 1 performs the second process, the control component 400 is configured to receive a first signal emitted by the temperature detection component 200 and to send a first instruction to the cooling component 300, wherein the first signal is used to indicate that the temperature of the exhaust pipe 300 is less than the first preset temperature, and the first instruction is used to indicate that the cooling component 300 is not working; or, the control component 400 is configured to receive a second signal emitted by the temperature detection component 200 and to send a second instruction to the cooling component 300, wherein the second signal is used to indicate that the temperature of the exhaust pipe 300 is equal to or greater than the first preset temperature, and the second instruction is used to indicate that the cooling component 300 is turned on.

[0052] The above arrangement realizes that when the reaction chamber 20 in the semiconductor device 1 performs the second process and the temperature of the exhaust pipe 300 is lower than the first preset temperature, the control component 400 instructs the cooling component 300 not to work, so as to save costs.

[0053] In addition, the above arrangement also realizes that when the reaction chamber 20 in the semiconductor device 1 executes the second process, when the temperature of the exhaust pipe 300 is equal to or greater than the first preset temperature, the control component 400 promptly instructs the cooling component 300 to turn on, so that the cooling component 300 can cool the exhaust pipe 300 in time, thereby avoiding the exhaust pipe temperature being too high and causing damage to the heating component.

[0054] Exemplarily, the first preset temperature can be set according to actual production needs.

[0055] In some embodiments, Figure 2 and Figure 3 As shown, the heating assembly 100 includes a heating sleeve 110 and a plurality of heating rods 120. The heating sleeve 110 is sleeved on the exhaust pipe 30 and extends along the extension direction of the exhaust pipe 30. The heating sleeve 110 has a plurality of accommodating spaces 1101, and the plurality of accommodating spaces 1101 are arranged in sequence along the circumferential direction of the heating sleeve 110, and the accommodating spaces 1101 extend along the extension direction of the heating sleeve 110. The tolerable temperature of the heating sleeve 110 is between 300°C and 400°C, and preferably, the tolerable temperature of the heating sleeve is 350°C. Specifically, the tolerable temperature of the heating sleeve 110 of ordinary materials is the above temperature. For a heating sleeve 110 with a higher tolerable temperature, including a heating sleeve 110 with a temperature of 400°C, 450°C or above 500°C, the higher the tolerable temperature of the heating sleeve 110, the higher the material cost of the heating sleeve 110, and therefore, the increase in the tolerable temperature of the heating sleeve 110 will lead to a substantial increase in the cost of the heating sleeve 110, and therefore, the heating sleeve 110 with a higher tolerable temperature is not within the scope of this embodiment. This embodiment is a technical solution proposed for the temperature tolerance of the heating jacket 110 in this embodiment.

[0056] The plurality of heating rods 120 are respectively disposed in the plurality of accommodating spaces 1101, the heating rods 120 extend along the extending direction of the heating sleeve 110, and the heating rods 120 are electrically connected to a power source. The heating assembly 100 has a simple structure, good heating uniformity, and is easy to assemble and disassemble.

[0057] Exemplarily, the shape of the cross section of the heating jacket 110 is the same as or different from the shape of the cross section of the exhaust pipe 30. Exemplarily, the plurality of accommodating spaces 1101 are uniformly or unevenly arranged in sequence along the circumferential direction of the heating jacket 110. When the shape of the cross section of the heating jacket 110 is the same as the shape of the cross section of the exhaust pipe 30, and the plurality of accommodating spaces 1101 are uniformly arranged in sequence along the circumferential direction of the heating jacket 110, the heating uniformity of the exhaust pipe 30 by the heating assembly 100 can be further improved.

[0058] Exemplarily, the heating sleeve 110 is detachably connected to the exhaust pipe 30 , so as to improve the installation stability of the heating assembly 100 and facilitate maintenance and replacement of the heating assembly 100 and the exhaust pipe 30 .

[0059] In some embodiments, Figure 4 and Figure 5As shown, the cooling assembly 300 includes a cooling pipe 310 and a cooling medium supply assembly 320. The cooling pipe 310 is sleeved on the heating assembly 100 and has a medium input port 3101 and a medium output port 3102. The cooling medium supply assembly 320 is arranged outside the reaction chamber 20 and is respectively connected to the medium input port 3101 and the medium output port 3102. The cooling medium supply assembly 320 is configured to provide a cooling medium, and the cooling medium can enter the cooling pipe 310 from the medium input port 3101 and flow out of the cooling pipe 310 from the medium output port 3102 to take away part of the heat of the heating assembly 100 and the exhaust pipe 30. The cooling assembly 300 has a simple structure, good cooling uniformity, and is easy to disassemble and assemble.

[0060] For example, the cross-section of the cooling pipe 310 may be in the shape of a circular ring, a rectangular ring, or other polygonal rings, etc. For example, the cross-sections of the cooling pipe 310, the heating assembly 100, and the exhaust pipe 30 may be the same or different in shape. When the cross-sections of the cooling pipe 310, the heating assembly 100, and the exhaust pipe 30 are in the same shape, the cooling uniformity of the cooling assembly 300 can be further improved.

[0061] Exemplarily, the cooling pipe 310 is detachably connected to the heating assembly 100 , so as to improve the installation stability of the cooling pipe 310 and facilitate maintenance and replacement of the cooling pipe 310 .

[0062] In some embodiments, Figure 4 As shown, the cooling assembly 300 further includes at least two cooling medium delivery pipelines 330, one cooling medium delivery pipeline 330 is configured to connect the medium input port 3101 with the cooling medium supply assembly 320, and the other cooling medium delivery pipeline 330 is configured to connect the medium output port 3102 with the cooling medium supply assembly 320. The cooling medium delivery pipeline 330 can be sealed and connected to the reaction chamber 20.

[0063] The communication method between the cooling pipe 310 and the cooling medium supply assembly 320 is simple and reliable.

[0064] In some embodiments, the cooling medium is in a gaseous state or a liquid state. For example, when the cooling medium is in a gaseous state, the cooling medium may be air, nitrogen, etc. For example, when the cooling medium is in a liquid state, the cooling medium may be water, liquid nitrogen, etc.

[0065] In the embodiments of the present disclosure, if not clearly defined, the connection may be in the form of detachable connection by means of bolts and nuts, screws, buckles, magnets, etc. In some connections, if there is no special requirement for detachable matching, non-detachable connection may be achieved by means of welding, bonding, etc.

[0066] The embodiment of the present disclosure provides a temperature control method for an exhaust pipe, which is applied to a semiconductor device 1. The semiconductor device 1 at least includes a reaction chamber 20 and an exhaust pipe 30. After a reaction occurs inside the reaction chamber 20, exhaust gas is generated. The exhaust pipe 30 is connected to the bottom of the reaction chamber 20 and can discharge the exhaust gas. The temperature control method for the exhaust pipe is applied to the temperature control device 10 for the exhaust pipe mentioned in the above embodiment. The temperature control device 10 for the exhaust pipe is configured to control the temperature of the exhaust pipe 30.

[0067] like Figure 6 As shown, when adjusting and controlling according to the process, the temperature control method of the exhaust pipe includes the following steps.

[0068] Step 600 : Detecting a target process performed inside the reaction chamber 20 , where the target process is the first process or the second process.

[0069] The target process is a specific process performed by the semiconductor device 1 on the product inside the reaction chamber 20 .

[0070] For plasma etching or PECVD equipment, there are generally two processes, one is a reaction process and the other is a cleaning process, and the cleaning process is generally performed after the reaction process. Specifically, for plasma etching equipment, it includes a process of etching the wafer in the plasma etching equipment, and also includes a process of cleaning the plasma etching equipment after the wafer is etched. Similarly, for PECVD equipment, it includes a process of coating the wafer in the PECVD equipment, and also includes a process of cleaning the PECVD equipment after coating.

[0071] The first process includes at least one of a deposition process and an etching process on the wafer surface, and the second process includes a cleaning process for the reaction chamber 20, or the exhaust pipe 30, or the reaction chamber 20 and the exhaust pipe 30. The second process is generally performed after the first process.

[0072] When the semiconductor device 1 performs the first process, unconsumed reactants and reaction byproducts containing carbon, fluorine, or carbon and fluorine enter the exhaust pipe 30 from the reaction chamber 20. If the temperature of the exhaust pipe 30 is too low, the reactants and reaction byproducts may excessively adhere to the inner wall of the exhaust pipe 30, or the organic layer may be deposited and accumulated on the inner wall of the exhaust pipe 30, thereby gradually clogging the exhaust pipe 30. Once the exhaust pipe 30 is clogged, the pressure control of the reaction chamber 20 of the semiconductor device 1 may be affected, and the reaction gas and reaction byproducts may easily flow back to the reaction chamber 20 of the semiconductor device 1, thereby affecting the cleanliness of the wafer surface.

[0073] When the semiconductor device 1 performs the second process, when the reactants containing fluorine and oxygen react with the deposits on the inner wall of the reaction chamber 20 and the inner wall of the exhaust pipe 30 to be removed, a lot of heat is often generated, causing the exhaust pipe 30 to heat up sharply, so that the temperature of the exhaust pipe 30 exceeds the tolerance temperature of the heating sleeve 110 of the heating component 100, resulting in damage to the heating component 100. Therefore, when the semiconductor device 1 performs the second process, the exhaust pipe 30 and the heating component 100 need to be cooled to prevent the temperature of the heating sleeve 110 from exceeding the tolerance temperature of the heating sleeve 110 and being damaged.

[0074] The execution subject of the temperature control device 10 of the exhaust pipe is the control component 400, which can be a server, a processor, a computer, a mobile phone, a tablet, etc., and is generally often bundled with the upper computer of the device for coordinated control. The server can be an independent physical server, or a server cluster or distributed system composed of multiple physical servers, or a cloud server that provides basic cloud computing services such as cloud services, cloud databases, cloud computing, cloud functions, cloud storage, network services, cloud communications, middleware services, domain name services, security services, and big data and artificial intelligence platforms. The processor can be a central processing unit (CPU).

[0075] The control component 400 may be disposed outside the reaction chamber 20 and is respectively connected to the heating component 100 , the temperature detection component 200 and the cooling component 300 in communication.

[0076] Step 6010: When it is the first process, instruct the heating component 100 of the temperature control device 10 of the exhaust pipe to work, and receive the real-time temperature emitted by the temperature detection component 200 of the temperature control device 10 of the exhaust pipe in real time.

[0077] Step 6010 can be specifically executed as follows: determine whether the target process is the first process. If the target process is the first process, instruct the heating component 100 of the temperature control device 10 of the exhaust pipe to work, and receive the real-time temperature emitted by the temperature detection component 200 of the temperature control device 10 of the exhaust pipe in real time; if the target process is not the first process, continue to execute step 6020.

[0078] Step 6020: When it is the second process, the heating component 100 is indicated not to work, and the real-time temperature emitted by the temperature detection component 200 is received in real time, and the cooling component 300 of the temperature control device 10 of the exhaust pipe is indicated not to work or to work.

[0079] Step 6020 can be specifically performed as follows: determining whether the target process is the second process, if the target process is the second process, indicating that the heating component 100 is not working, and receiving the real-time temperature sent by the temperature detection component 200 in real time, and indicating that the cooling component 300 is not working or working. If the target process is not the second process, indicating that both the heating component 100 and the cooling component 300 are not working.

[0080] When the reaction chamber 20 in the semiconductor device 1 performs the first process, the exhaust pipe 30 is heated by the heating component 100, thereby preventing the exhaust pipe 30 from being blocked due to the excessively low temperature of the exhaust pipe 30 when the reaction chamber 20 performs the first process. When the reaction chamber 20 performs the second process, the exhaust pipe 30 is cooled by the cooling component 300, thereby preventing the heating component 100 from being damaged due to the excessively high temperature of the exhaust pipe 30.

[0081] In some embodiments, Figure 7 As shown, when it is the second process, the temperature control method of the exhaust pipe also includes the following steps.

[0082] Step 6021: Receive a first signal from the temperature detection component 200 and send a first instruction to the cooling component 300.

[0083] Specifically, the first signal is used to indicate that the temperature of the exhaust pipe 30 is less than a first preset temperature. The first instruction is used to instruct the cooling assembly 300 not to work.

[0084] Step 6022: Receive a second signal from the temperature detection component 200 and send a second instruction to the cooling component 300.

[0085] Specifically, the second signal is used to indicate that the temperature of the exhaust pipe 30 is equal to or greater than the first preset temperature, and the second instruction is used to instruct the cooling assembly 300 to turn on.

[0086] The above steps realize that when the reaction chamber 20 performs the second process, when the temperature of the exhaust pipe 300 is lower than the first preset temperature, the control component 400 instructs the cooling component 300 not to work, and when the temperature of the exhaust pipe 30 is equal to or higher than the first preset temperature, the control component 400 instructs the cooling component 300 to work, so as to save costs.

[0087] In some embodiments, Figure 8 As shown, after issuing the second instruction to the cooling assembly 300, the temperature control method of the exhaust pipe further includes the following steps.

[0088] Step 6023: Issue a third instruction to the cooling component 300.

[0089] Specifically, the third instruction is used to instruct the cooling assembly 300 to gradually increase the flow rate of the provided cooling medium.

[0090] Step 6024: Receive the real-time temperature sent by the temperature detection component 200 in real time.

[0091] Step 6025: After the flow rate of the cooling medium reaches the first flow rate, determine whether the real-time temperature is greater than the second preset temperature.

[0092] Specifically, the second preset temperature is greater than the first preset temperature.

[0093] Step 6026: When the real-time temperature is greater than the second preset temperature, a fourth instruction is issued to the cooling assembly 300.

[0094] Specifically, the fourth instruction is used to instruct the cooling assembly 300 to gradually increase the flow rate of the cooling medium.

[0095] Step 6027: When the real-time temperature is less than or equal to the second preset temperature, a sixth instruction is issued to the cooling assembly 300.

[0096] Specifically, the sixth instruction is used to instruct the cooling assembly 300 to keep the flow rate of the cooling medium unchanged.

[0097] In some embodiments, Fig. 9 As shown, the temperature control method of the exhaust pipe also includes the following steps.

[0098] Step 6028: After the flow rate of the cooling medium reaches the second flow rate, determine whether the real-time temperature is less than or equal to the third preset temperature.

[0099] Specifically, the third preset temperature is greater than the second preset temperature.

[0100] Step 6029: When the real-time temperature is less than or equal to the third preset temperature, a fifth instruction is issued to the cooling assembly 300.

[0101] Specifically, the fifth instruction is used to instruct the cooling assembly 300 to keep the flow rate of the cooling medium unchanged.

[0102] Step 6030: When the real-time temperature is greater than the third preset temperature, a seventh instruction is issued to the cooling component 300.

[0103] Specifically, the seventh instruction is used to instruct the cooling assembly 300 to gradually increase the flow rate of the cooling medium.

[0104] Exemplarily, the first preset temperature can be set according to actual production needs. Exemplarily, the range of the first flow rate can be set according to actual production needs. Exemplarily, the range of the second preset temperature can be set according to actual production needs. Exemplarily, the range of the second flow rate can be set according to actual production needs. Exemplarily, the third preset temperature can be set according to actual production needs.

[0105] Fig.10 The figure is a schematic diagram showing the relationship between the flow rate of the cooling medium and the real-time temperature of the exhaust pipe in the temperature control method of the exhaust pipe provided in one embodiment of the present disclosure. Fig.10 The figure shows the relationship between the flow rate of the cooling medium and the real-time temperature of the exhaust pipe. Fig.10 It includes two curves, namely the flow change line and the temperature change line. The straight line is the flow change line, and the curved line is the temperature change line.

[0106] In some embodiments, the first preset temperature is 150°C.

[0107] In some embodiments, the first flow rate ranges from 1 L / min to 20 L / min.

[0108] In some embodiments, the first flow rate comprises 10 L / min, 13 L / min, or 15 L / min.

[0109] Exemplarily, the first flow rate may also include any value within the range of 1 L / min-20 L / min.

[0110] In some embodiments, the second preset temperature ranges from 200°C to 300°C.

[0111] In some embodiments, the second preset temperature includes 200°C, 230°C or 250°C.

[0112] Exemplarily, the second preset temperature may also include any value within the range of 200°C to 300°C.

[0113] In some embodiments, the second flow rate ranges from 15 L / min to 30 L / min.

[0114] In some embodiments, the second flow rate comprises 20 L / min, 23 L / min, or 25 L / min.

[0115] Exemplarily, the second flow rate may also include any value within the range of 15 L / min-30 L / min.

[0116] In some embodiments, the third preset temperature is 350°C.

[0117] The above specific numbers are only applicable to a specific solution of this embodiment, not a unified solution applicable to all technical solutions. For different semiconductor devices 1, the corresponding numbers will vary. This embodiment protects the implementation of the above technical solution itself, not the specific solution represented by the above numbers.

[0118] According to the actual production process, the size of the cooling pipe 310 and the tolerance temperature of the heating component 100, set appropriate ranges or values ​​of the first preset temperature, first flow rate, second preset temperature, second flow rate and third preset temperature to ensure that the control component 400 can promptly instruct the cooling component 300 to turn on, and promptly instruct the cooling component 300 to adjust the flow rate of the cooling medium to ensure that the maximum temperature of the exhaust pipe 30 does not exceed the tolerance temperature of the heating component 100, thereby avoiding damage to the heating component 100 due to excessive temperature of the exhaust pipe 30.

[0119] like Fig.11 As shown, when the temperature of the exhaust pipe 30 is regulated, the temperature control method of the exhaust pipe includes the following steps.

[0120] Step 1100: When the temperature detected by the temperature detection component 200 is lower than the first target temperature, the heating component 100 is controlled to operate.

[0121] Step 1100 can be specifically executed as follows: determine whether the temperature detected by the temperature detection component 200 is less than the first target temperature; if the temperature detected by the temperature detection component 200 is less than the first target temperature, control the heating component 100 to work and the cooling component 300 not to work.

[0122] Step 1110: When the temperature detected by the temperature detection component 200 is greater than the second target temperature, the heating component 100 and the cooling component 300 are controlled not to work.

[0123] Step 1110 can be specifically executed as follows: determine whether the temperature detected by the temperature detection component 200 is greater than the second target temperature. If the temperature detected by the temperature detection component 200 is greater than the second target temperature, control the heating component 100 not to work; if the temperature detected by the temperature detection component 200 is less than or equal to the second target temperature, control the heating component 100 to work and the cooling component 300 not to work.

[0124] Specifically, the second target temperature is greater than the first target temperature.

[0125] Step 1120: When the temperature detected by the temperature detection component 200 is greater than the third target temperature, control the cooling component 300 to operate.

[0126] Step 1120 can be specifically executed as follows: determine whether the temperature detected by the temperature detection component 200 is greater than the third target temperature. If the temperature detected by the temperature detection component 200 is greater than the third target temperature, control the cooling component 300 to work; if the temperature detected by the temperature detection component 200 is less than or equal to the third target temperature, control the cooling component 300 not to work.

[0127] Specifically, the third target temperature is greater than the second target temperature.

[0128] The phrases "one embodiment", "an embodiment", etc. mentioned in the specification indicate that the embodiment described may include a specific feature, structure or characteristic, but not every embodiment may include the specific feature, structure or characteristic. In addition, such phrases do not necessarily refer to the same embodiment. In addition, when a specific feature, structure or characteristic is described in conjunction with an embodiment, it is within the knowledge of those skilled in the art to implement such feature, structure or characteristic in conjunction with other embodiments, whether explicitly or not explicitly described.

[0129] It should be understood that “on,” “above,” and “over” in this disclosure should be interpreted in the broadest manner, so that “on” not only means “directly on something,” but also includes the meaning of “on something” with intervening features or layers therebetween, and “above” or “over” not only includes the meaning of “above” or “over,” but also may include the meaning of “above” or “over something” with no intervening features or layers therebetween (i.e., directly on something).

[0130] Additionally, spatially relative terms, such as "below," "below," "beneath," "above," "above," etc., may be used herein for ease of description to describe the relationship of one component or feature to other components or features as shown in the figures. The spatially relative terms are intended to encompass different orientations of the component in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0131] It should be noted that, in this article, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "comprises a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element.

[0132] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent substitutions, etc. made within the spirit and principles of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A temperature control device for an exhaust pipe, applied to a semiconductor device, wherein the semiconductor device at least comprises a reaction chamber and an exhaust pipe, wherein waste gas is generated after a reaction occurs inside the reaction chamber, and the exhaust pipe is connected to the bottom of the reaction chamber and can discharge the waste gas, wherein: The temperature control device of the exhaust pipe is configured to control the temperature of the exhaust pipe; Wherein, the temperature control device of the exhaust pipe comprises: A heating assembly, which can be mounted on the exhaust pipe and is configured to heat the exhaust pipe; a temperature detection component connected to the exhaust pipe and configured to detect the temperature of the exhaust pipe; a cooling assembly connected to the heating assembly and configured to cool the exhaust pipe; The control component is respectively connected to the heating component, the temperature detection component and the cooling component for communication, and is configured to control the operation of the heating component and the cooling component.

2. The temperature control device for the exhaust pipe according to claim 1, characterized in that: The control component controls the heating component to operate when the temperature detected by the temperature detection component is lower than the first target temperature, and controls the heating component not to operate when the temperature detected by the temperature detection component is higher than the second target temperature; The control component controls the cooling component to operate when the temperature detected by the temperature detection component is greater than a third target temperature; Among them, the first target temperature, the second target temperature and the third target temperature increase in sequence.

3. The temperature control device for the exhaust pipe according to claim 1, characterized in that: When the reaction chamber in the semiconductor device performs a first process, the control component instructs the heating component to work, and receives the real-time temperature sent by the temperature detection component in real time; When the reaction chamber in the semiconductor device performs a second process, the control component instructs the heating component not to work, receives the real-time temperature sent by the temperature detection component in real time, and instructs the cooling component not to work or to work; The second process is located after the first process, the first process includes at least one of a deposition process and an etching process on the surface of the wafer, and the second process includes a plasma cleaning process for the reaction chamber and / or the exhaust pipe.

4. The temperature control device for the exhaust pipe according to claim 3, characterized in that: When the reaction chamber in the semiconductor device performs the second process, the control component is configured to receive a first signal emitted by the temperature detection component and issue a first instruction to the cooling component, wherein the first signal is used to indicate that the temperature of the exhaust pipe is less than a first preset temperature, and the first instruction is used to instruct the cooling component not to work; or, receive a second signal emitted by the temperature detection component and issue a second instruction to the cooling component, wherein the second signal is used to indicate that the temperature of the exhaust pipe is equal to or greater than the first preset temperature, and the second instruction is used to instruct the cooling component to turn on.

5. The temperature control device for an exhaust pipe according to any one of claims 1 to 4, characterized in that: The heating assembly comprises: A heating jacket, which is sleeved on the exhaust pipe and extends along the extension direction of the exhaust pipe; wherein the heating jacket has a plurality of accommodating spaces, the plurality of accommodating spaces are arranged in sequence along the circumferential direction of the heating jacket, and the accommodating spaces extend along the extension direction of the heating jacket; the heating jacket has a temperature tolerance of between 300°C and 400°C, and preferably, the heating jacket has a temperature tolerance of 350°C; A plurality of heating rods are respectively arranged in the plurality of accommodating spaces, the heating rods extend along the extending direction of the heating sleeve, and the heating rods are electrically connected to a power source.

6. The temperature control device for an exhaust pipe according to any one of claims 1 to 4, characterized in that: The cooling assembly comprises: A cooling pipeline, which is sleeved on the heating component and has a medium input port and a medium output port; A cooling medium supply assembly is arranged outside the reaction chamber and is respectively connected to the medium input port and the medium output port, and is configured to provide a cooling medium. The cooling medium can enter the cooling pipe from the medium input port and flow out of the cooling pipe from the medium output port to take away part of the heat of the heating assembly and the exhaust pipe.

7. The temperature control device for the exhaust pipe according to claim 6, characterized in that: The cooling assembly also includes: at least two cooling medium delivery pipelines, one of the cooling medium delivery pipelines is configured to connect the medium input port with the cooling medium supply assembly, and the other of the cooling medium delivery pipelines is configured to connect the medium output port with the cooling medium supply assembly; Wherein, the cooling medium delivery pipeline can be sealed and connected to the reaction chamber.

8. The temperature control device for the exhaust pipe according to claim 7, characterized in that: The cooling medium may be in a gaseous state or a liquid state.

9. A temperature control method for an exhaust pipe, applied to a semiconductor device, wherein the semiconductor device at least comprises a reaction chamber and an exhaust pipe, wherein waste gas is generated after a reaction occurs inside the reaction chamber, and the exhaust pipe is connected to the bottom of the reaction chamber and can discharge the waste gas, wherein: The exhaust pipe temperature control method is applied to the exhaust pipe temperature control device according to any one of claims 1 to 8, wherein the exhaust pipe temperature control device is configured to control the temperature of the exhaust pipe; The temperature control method of the exhaust pipe comprises: The control component of the temperature control device of the exhaust pipe controls the heating component of the temperature control device of the exhaust pipe to operate when the temperature detected by the temperature detection component of the temperature control device of the exhaust pipe is lower than the first target temperature, and controls the heating component not to operate when the temperature detected by the temperature detection component is higher than the second target temperature; The control component controls the cooling component of the temperature control device of the exhaust pipe to operate when the temperature detected by the temperature detection component is greater than the third target temperature; Wherein, the first target temperature, the second target temperature and the third target temperature increase in sequence; or, detecting a target process performed inside the reaction chamber, wherein the target process is a first process or a second process; When the first process is in progress, instructing the heating component to work, and receiving the real-time temperature sent by the temperature detection component in real time; When it is the second process, the heating component is indicated to be not working, the real-time temperature emitted by the temperature detection component is received in real time, and the cooling component of the temperature control device of the exhaust pipe is indicated to be not working or working.

10. The exhaust pipe temperature control method according to claim 9, characterized in that: When the second process is used, the temperature control method of the exhaust pipe further includes: receiving a first signal sent by the temperature detection component, and sending a first instruction to the cooling component, wherein the first signal is used to indicate that the temperature of the exhaust pipe is less than a first preset temperature, and the first instruction is used to instruct the cooling component not to work; or, A second signal is received from the temperature detection component, and a second instruction is sent to the cooling component, wherein the second signal is used to indicate that the temperature of the exhaust pipe is equal to or greater than the first preset temperature, and the second instruction is used to instruct the cooling component to turn on.

11. The temperature control method of the exhaust pipe according to claim 10, characterized in that: After issuing the second instruction to the cooling component, the method further includes: issuing a third instruction to the cooling component, wherein the third instruction is used to instruct the cooling component to gradually increase the flow rate of the provided cooling medium; Receiving the real-time temperature sent by the temperature detection component in real time; After the flow rate of the cooling medium reaches the first flow rate, determining whether the real-time temperature is greater than a second preset temperature, the second preset temperature being greater than the first preset temperature; In a case where the real-time temperature is greater than the second preset temperature, a fourth instruction is issued to the cooling component, wherein the fourth instruction is used to instruct the cooling component to gradually increase the flow rate of the cooling medium.

12. The temperature control method of the exhaust pipe according to claim 11, characterized in that: Also includes: After the flow rate of the cooling medium reaches the second flow rate, determining whether the real-time temperature is less than or equal to a third preset temperature, and the third preset temperature is greater than the second preset temperature; When the real-time temperature is less than or equal to the third preset temperature, a fifth instruction is issued to the cooling component, wherein the fifth instruction is used to instruct the flow rate of the cooling medium provided by the cooling component to remain unchanged.

13. The temperature control method of the exhaust pipe according to claim 12, characterized in that: The first preset temperature is 150°C; And / or, the first flow rate ranges from 1 L / min to 20 L / min; And / or, the second preset temperature ranges from 200° C. to 300° C.; And / or, the second flow rate ranges from 15 L / min to 30 L / min; And / or, the third preset temperature is 350°C.

14. The exhaust pipe temperature control method according to claim 13, characterized in that: The first flow rate includes 10 L / min, 13 L / min or 15 L / min; And / or, the second preset temperature includes 200°C, 230°C or 250°C; And / or, the second flow rate includes 20 L / min, 23 L / min or 25 L / min.

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