Wafer carrying device, wafer carrying method, wafer processing equipment and host computer

Abstract

The present invention provides a wafer carrying device, a wafer carrying method, a wafer processing equipment and a host computer. The wafer carrying device includes: a wafer carrying platform, a central distance measuring unit, an edge distance measuring unit, an adsorption device and a control unit. The central distance measuring unit is used to determine the position information of the central area of ​​the front side of the wafer carried by the wafer carrying platform, and the edge distance measuring unit is used to determine the position information of the edge area of ​​the back side of the wafer carried by the wafer carrying platform. The control unit controls the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central distance measuring result of the central distance measuring unit and the edge distance measuring result of the edge distance measuring unit to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer carrying platform in a flat posture, which is more conducive to the subsequent wafer process and improves the quality of the wafer process.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a wafer carrying device, a wafer carrying method, a wafer processing equipment, and a host computer. Background Art

[0002] In the semiconductor manufacturing process, thin film deposition on semiconductor wafers is an important step. In the process of thin film deposition, it is necessary to deposit layers of materials on the wafer to be processed. As various material layers and various semiconductor devices are stacked on the surface of the wafer, various stresses will be generated on the surface of the wafer, causing the wafer to warp.

[0003] Warping refers to the phenomenon that the wafer is deformed and not flat. There are usually two reasons for warping: First, during the deposition process, the surface deposition rate is not completely consistent at each point, resulting in uneven stress of the deposited material and warping. After warping, the deposition rate at each position is further affected, causing the warping to worsen. Second, after high-temperature deposition, due to the different thermal deformation coefficients of the upper and lower materials, the wafer will arch upward or sag downward after cooling. Warping will lead to a decrease in wafer yield, for example, the nitride-oxygen stacking layer will fall off, the wafer will break, the layout alignment performance will be unstable, the lithography accuracy will deteriorate, etc. In addition, warping will also cause difficulties in the operation of subsequent mask, packaging and other processes.

[0004] Generally, during the deposition process, the wafer is carried by a wafer carrier. The wafer carrier may be provided with a negative pressure hole, which is used to evacuate and form a negative pressure to adsorb the wafer. However, if the wafer is warped and the degree of warping is large, a sealed cavity cannot be formed between the back of the wafer and the wafer carrier, or the gap is too large to form sufficient adsorption force, and the wafer will not be adsorbed on the wafer carrier. Summary of the invention

[0005] In view of the above-mentioned shortcomings of the related art, the purpose of the present disclosure is to provide a wafer carrying device, a wafer carrying method, a wafer processing equipment, and a host computer to solve various problems in the related art.

[0006] A first aspect of the present disclosure provides a wafer carrying device, comprising:

[0007] A wafer carrying platform is arranged in the reaction chamber and is used to carry the wafer;

[0008] A central distance measuring unit, disposed above the central area of ​​the wafer carrying platform, for determining position information of the central area of ​​the front side of the wafer carried by the wafer carrying platform;

[0009] An edge distance measuring unit, disposed at the edge of the wafer carrying platform, for determining position information of the edge of the back side of the wafer carried by the wafer carrying platform;

[0010] The adsorption device comprises a central adsorption unit located in the central area of ​​the wafer carrying platform and an edge adsorption unit located at the edge of the wafer carrying platform; and

[0011] A control unit is associated with the central distance measuring unit, the edge distance measuring unit and the adsorption device, and is used to control the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central distance measuring result of the central distance measuring unit and the edge distance measuring result of the edge distance measuring unit, so as to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer supporting platform in a flat posture.

[0012] In certain examples of the first aspect, the central adsorption unit includes: at least one central groove provided in the central area of ​​the wafer carrier platform, a central air suction port provided in the at least one central groove, a central pipeline connected to the central air suction port, and a central drainage bypass connected to the central pipeline; the edge adsorption unit includes: at least one edge groove provided in the edge area of ​​the wafer carrier platform, an edge air suction port provided in the at least one edge groove, an edge pipeline connected to the edge air suction port, and an edge drainage bypass connected to the edge pipeline; wherein the central pipeline and the edge pipeline are commonly connected to a common gas source, and the central drainage bypass and the edge drainage bypass are commonly connected to a common air pump.

[0013] In certain examples of the first aspect, the central adsorption unit further includes a central balancing bypass, one end of which is connected to the central pipeline, and the other end of which is connected to a common air pump; the edge adsorption unit further includes an edge balancing bypass, one end of which is connected to the edge pipeline, and the other end of which is connected to a common air pump.

[0014] In certain examples of the first aspect, the central adsorption unit includes: at least one central groove provided in the central area of ​​the wafer carrier platform, a central air suction port provided in the at least one central groove, and a central air control component connected to the central air suction port; the edge adsorption unit includes: at least one edge groove provided in the edge area of ​​the wafer carrier platform, an edge air suction port provided in the at least one edge groove, and an edge air control component connected to the edge air suction port; the control unit is associated with the central air control component and the edge air control component.

[0015] In certain examples of the first aspect, the central air control component includes: a central pipeline, one end of which is connected to the central air intake port, and the other end of which is connected to the central air source; a central drainage bypass, one end of which is connected to the central pipeline, and the other end of which is connected to the central air pump; the edge air control component includes: an edge pipeline, one end of which is connected to the edge air intake port, and the other end of which is connected to the edge air source; an edge drainage bypass, one end of which is connected to the edge pipeline, and the other end of which is connected to the edge air pump.

[0016] In certain examples of the first aspect, the central air control component also includes a central balancing bypass, one end of which is connected to the central pipeline, and the other end of which is connected to the central air pump; the edge air control component also includes an edge balancing bypass, one end of which is connected to the edge pipeline, and the other end of which is connected to the edge air pump.

[0017] In some examples of the first aspect, the central groove is a circular groove, or an annular groove, or an arc groove, and the edge groove is an annular groove or an arc groove.

[0018] In certain examples of the first aspect, a central air pressure controller and a first central pneumatic valve are provided on the central pipeline, and a second central pneumatic valve with a throttle is provided on the central drainage bypass; an edge air pressure controller and a first edge pneumatic valve are provided on the edge pipeline, and a second edge pneumatic valve with a throttle is provided on the edge drainage bypass.

[0019] In some examples of the first aspect, a third central pneumatic valve is provided on the central balancing bypass, and a third edge pneumatic valve is provided on the edge balancing bypass.

[0020] In certain examples of the first aspect, in the wafer supporting platform, there is at least one central supporting surface corresponding to the at least one central groove and at least one edge supporting surface corresponding to the at least one edge groove, and the supporting height of the at least one central supporting surface is greater than or equal to the supporting height of the at least one edge supporting surface.

[0021] In certain examples of the first aspect, at least one central ranging unit is provided above the central area of ​​the wafer carrier; the central ranging unit determines the distance between the central area of ​​the front side of the wafer and the central ranging unit by sending and receiving ranging signals toward the wafer below; a plurality of edge ranging units are provided at the edge of the wafer carrier; the edge ranging unit determines the distance between the edge of the back side of the wafer and the edge ranging unit by sending and receiving ranging signals toward the wafer above.

[0022] A second aspect of the present disclosure provides a wafer carrying method, which is applied to the wafer carrying device as described above, and the wafer carrying method comprises the following steps:

[0023] placing a wafer on a wafer carrier in a reaction chamber;

[0024] Determine the position information of the central area of ​​the front side of the wafer by using a central distance measuring unit and determine the position information of the edge area of ​​the back side of the wafer by using an edge distance measuring unit to obtain the warpage change of the wafer; and

[0025] Based on the central distance measurement result of the central distance measurement unit and the edge distance measurement result of the edge distance measurement unit, the central adsorption unit and / or the edge adsorption unit in the adsorption device are controlled to adjust the adsorption pressure to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer supporting platform in a flat posture.

[0026] In some examples of the second aspect, based on the central distance measurement result of the central distance measurement unit and the edge distance measurement result of the edge distance measurement unit, controlling the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure includes: when the central distance measurement result obtained by the central distance measurement unit is less than the lower limit value of the central area standard range, controlling the central adsorption unit in the adsorption device to reduce the pressure and be lower than the pressure in the reaction chamber, so that the central area of ​​the wafer is subjected to downward pressure; when the central distance measurement result obtained by the central distance measurement unit is greater than the upper .... The attachment unit increases the pressure to be higher than the pressure in the reaction chamber, so that the central area of ​​the wafer is subjected to upward pressure; when the central distance measurement result obtained by the edge distance measurement unit is less than the lower limit value of the edge area standard range, the edge adsorption unit in the adsorption device is controlled to increase the pressure to be higher than the pressure in the reaction chamber, so that the edge area of ​​the wafer is subjected to upward pressure; when the central distance measurement result obtained by the edge distance measurement unit is greater than the upper limit value of the edge area standard range, the edge adsorption unit in the adsorption device is controlled to reduce the pressure to be lower than the pressure in the reaction chamber, so that the edge area of ​​the wafer is subjected to downward pressure.

[0027] A third aspect of the present disclosure provides a wafer processing device, comprising a reaction chamber and the wafer carrying device as described above.

[0028] A fourth aspect of the present disclosure provides a host computer, including: a processor; a memory storing an adsorption control program; wherein the adsorption control program executes the wafer carrying method as described above when the processor runs the adsorption control program.

[0029] As described above, the embodiments of the present disclosure provide a wafer carrying device, a wafer carrying method, a wafer processing equipment and a host computer. The wafer carrying device includes: a wafer carrying platform, a central ranging unit, an edge ranging unit, an adsorption device, and a control unit. The central ranging unit is used to determine the position information of the central area of ​​the front side of the wafer carried by the wafer carrying platform, and the edge ranging unit is used to determine the position information of the edge area of ​​the back side of the wafer carried by the wafer carrying platform. The control unit controls the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central ranging result of the central ranging unit and the edge ranging result of the edge ranging unit to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer carrying platform in a flat posture. Compared with the related art, the wafer carrying device and wafer processing equipment provided by the present invention can detect the position information of the detection points in the central area of ​​the wafer and the position information of the detection points in the edge area of ​​the wafer in real time, and control the central adsorption unit and / or the edge adsorption unit of the adsorption device to adjust the adsorption pressure, thereby adjusting the relative position of the central area and / or the edge area of ​​the wafer with the wafer carrying platform, and can adjust the carrying capacity of wafers with different degrees of warping, which is more conducive to the subsequent wafer process technology and improves the quality of the wafer process. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 Shown is a side view structural schematic diagram of a wafer processing device in one embodiment of the present invention.

[0031] Figure 2 Shown is a side view structural schematic diagram of a wafer carrier device disclosed in one embodiment.

[0032] Figures 3 to 6 Display as Figure 2 Schematic diagram of the structure of the wafer in different deformation embodiments.

[0033] Figure 7 Display as Figure 2 A schematic structural diagram of a wafer supporting device in one embodiment at a certain viewing angle.

[0034] Figure 8 Display as Figure 2 A schematic structural diagram of a wafer supporting device in another embodiment.

[0035] Fig. 9 Display as Figure 2 A schematic diagram of an adsorption device in one embodiment.

[0036] Fig.10 Display as Figure 2 A schematic diagram of an adsorption device in another embodiment.

[0037] Fig.11Shown is a schematic flow chart of a wafer carrying method disclosed in one embodiment.

[0038] Fig.12 Shown is a principle block diagram of the host computer in one embodiment of the present disclosure. DETAILED DESCRIPTION

[0039] The following is an explanation of the embodiments of the present disclosure by specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed by the present disclosure. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in the present disclosure can also be modified or changed in various ways according to different viewpoints and application modules without departing from the spirit of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0040] The following is a detailed description of the embodiments of the present disclosure with reference to the accompanying drawings so that those skilled in the art can easily implement the present disclosure. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0041] In the representations of the present disclosure, the reference terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" and the like mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials or characteristics represented may be combined in any one or a group of embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples represented in the present disclosure and the features of different embodiments or examples, unless they are mutually contradictory.

[0042] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the representation of the present disclosure, "a group" means two or more, unless otherwise clearly and specifically defined.

[0043] In order to clearly describe the present disclosure, components not related to the description are omitted, and the same reference numerals are given to the same or similar components throughout the specification.

[0044] Throughout the specification, when a device is said to be "connected" to another device, this includes not only the case of "direct connection" but also the case of "indirect connection" by placing other elements therebetween. In addition, when a device is said to "include" a certain component, unless otherwise stated, it does not exclude other components, but means that other components may be included.

[0045] Although the terms first, second, etc. are used to represent various elements in this article in some examples, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first interface and the second interface, etc. are represented. Moreover, as used in this article, the singular forms "one", "one" and "the" are intended to also include plural forms, unless there is an opposite indication in the context. It should be further understood that the terms "comprising" and "including" indicate that there are the described features, steps, operations, elements, modules, projects, kinds, and / or groups, but do not exclude the existence, occurrence or addition of one or a group of other features, steps, operations, elements, modules, projects, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". Only when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way, will there be an exception to this definition.

[0046] The technical terms used herein are only used to refer to specific embodiments and are not intended to limit the present disclosure. The singular form used herein also includes the plural form unless the sentence clearly indicates the contrary meaning. The meaning of "including" used in the specification is to specify specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0047] Although not defined differently, all terms, including technical and scientific terms used herein, have the same meaning as those generally understood by those skilled in the art to which the present disclosure belongs. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with relevant technical literature and the message of the present disclosure, and shall not be overly interpreted as ideal or very formal meanings unless defined.

[0048] In related technologies involving the deposition of semiconductor materials on wafers, as various material layers and various semiconductor devices are stacked on the surface of the wafer, various stresses are generated on the surface of the wafer, causing the wafer to warp. The warped wafer cannot be placed flat on the wafer carrier and cannot maintain a stable state with the wafer carrier, affecting the subsequent process of the wafer and its quality.

[0049] In view of this, a wafer carrying device, a wafer carrying method, a wafer processing equipment and a host computer are provided in the embodiments of the present disclosure, which can detect the warping changes of the wafer in real time, and adjust the adsorption pressure corresponding to the central area of ​​the wafer and / or the corresponding edge area of ​​the wafer according to the warping characteristics of the wafer, compensate for the deformation of the wafer, and ensure that the wafer is placed on the wafer carrying platform in a flat posture, which is more conducive to the subsequent wafer processing technology and improves the wafer quality.

[0050] The embodiments of the present disclosure provide a wafer processing device and a wafer carrying device used in the wafer processing device.

[0051] See also Figure 1 and Figure 2 ,in, Figure 1 The figure shows a schematic side view of a wafer processing apparatus in one embodiment of the present disclosure. Figure 2 Display as Figure 1 A schematic side view of a wafer carrier in one embodiment.

[0052] like Figure 1 As shown, the wafer processing equipment in this embodiment may include: a reaction chamber and a wafer carrying device, wherein the wafer carrying device includes a wafer carrying table, a central distance measuring unit, an edge distance measuring unit, an adsorption device, and a control unit.

[0053] The reaction chamber 10 is suitable for performing thin film deposition on a wafer. Taking conventional chemical vapor deposition (CVD) as an example, the chemical vapor deposition heats one or more gases (called precursors) to decompose them, generate reaction products, and deposit them on the surface of the wafer to form the desired thin film.

[0054] The reaction chamber 10 includes a sealed cavity with side walls, and a wafer carrying platform 11 is disposed in the central area of ​​the sealed cavity.

[0055] A top cover is provided on the upper part of the reaction chamber 10, and an air intake device is provided on the top cover, and the air intake device may include a nozzle or nozzle assembly 101 facing the wafer carrier 11, which is used to spray the raw material gas to the wafer carrier 11. The nozzle or nozzle assembly 101 is connected to a pipe 102 and a gas source 103 for conveying the raw material gas into the reaction chamber 10, and the supply amount of the raw material gas conveyed into the closed cavity of the reaction chamber 10 can be adjusted by setting a gas valve.

[0056] A material inlet and outlet port 104 may be provided on the side wall of the reaction chamber 10, and the material inlet and outlet port 104 may be used to transfer related workpieces, including but not limited to wafers, etc. Generally, a first slit door 105 is provided at the material inlet and outlet port 104, and the first slit door 105 may move in the up-down direction or the left-right direction relative to the material inlet and outlet port 104.

[0057] The wafer carrier 11 is disposed in the reaction chamber 10 for carrying the wafer 100 . In some embodiments, a thin film deposition process is performed on only one wafer at a time in the reaction chamber 10 , so the wafer carrier 11 is located at the center of the reaction chamber 10 .

[0058] In some embodiments, a heating device (not shown in the figure) may be provided below the wafer carrier 11 to heat the carried wafer 100 to achieve the desired temperature. In some embodiments, the sidewall surface and the top cover surface of the reaction chamber 10 may be coated with a high reflective film or polished to reflect the heat radiation heated by the heating device back to the surface of the wafer carrier 11 and the wafer 100 carried thereon.

[0059] In some embodiments, the wafer carrier 11 may be associated with a rotating device. The rotating device may include a selectable rotating member and a rotating power mechanism, the rotating member may be sealed with the wafer carrier 11 and the reaction chamber 10, and the selectable power mechanism may drive the rotating member and the associated wafer carrier 11 and the wafer 100 carried thereon to perform reciprocating rotation, so that the thin film deposited on the wafer 100 is more uniform.

[0060] At least one central distance measuring unit 13 is disposed above the central area of ​​the wafer carrying platform for determining position information of the central area of ​​the front side of the wafer 100 carried by the wafer carrying platform 11 .

[0061] The number of the central distance measuring units 13 may be one or more. Exemplarily, the number of the central distance measuring units 13 may be, for example, one, and this central distance measuring unit 13 is directly opposite to the center of the wafer carrier 11 (that is, directly opposite to the center of the wafer 100 carried by the wafer carrier 11), and can be used to determine the position information of the center of the front of the wafer 100 carried by the wafer carrier 11. Exemplarily, the number of the central distance measuring units 13 may be, for example, three, and these three central distance measuring units 13 are evenly arranged with a certain position point as the center and directly opposite to the central area of ​​the wafer carrier 11 (that is, directly opposite to the central area of ​​the wafer 100 carried by the wafer carrier 11), and can be used to determine the position information of the central area of ​​the front of the wafer 100 carried by the wafer carrier 11, wherein the position point corresponds to the center of the wafer carrier 11. Of course, the number and arrangement of the central distance measuring units 13 can still be changed in other ways.

[0062] The central distance measuring unit 13 is located directly above the wafer carrier 11. The central distance measuring unit 13 transmits a distance measuring signal in a vertical manner toward the wafer 100 carried by the wafer carrier 11 below. The transmitted distance measuring signal reaches the front of the wafer and is reflected back to the central distance measuring unit 13. The central distance measuring unit 13 determines the distance between the measuring point in the central area of ​​the front of the wafer and the central distance measuring unit 13 according to the received distance measuring signal. Exemplarily, the central distance measuring unit 13 can use a laser distance measuring sensor, an infrared sensor, or a Doppler distance measuring sensor.

[0063] By using the aforementioned central distance measuring unit 13, the distance between the central area of ​​the front side of the wafer 100 carried by the wafer carrier 11 and the central distance measuring unit 13 can be obtained, and the deformation amount of the central area of ​​the wafer 100 can be determined by comparing the detected distance with the preset standard value of the central area of ​​the wafer. Figure 3 As shown, when the central distance measurement result obtained by the central distance measurement unit 13 (i.e., the distance D1 between the central area of ​​the front side of the wafer 100 and the central distance measurement unit 13) is less than the lower limit of the central area standard range, it indicates that the central area of ​​the wafer is in an upward arch deformation. Figure 4 As shown, when the central distance measurement result obtained by the central distance measurement unit 13 (ie, the distance D2 between the central area of ​​the front side of the wafer 100 and the central distance measurement unit 13) is greater than the upper limit value of the central area standard range, it indicates that the central area of ​​the wafer is in a sinking deformation.

[0064] A plurality of edge distance measuring units 15 are provided at the edge region of the wafer carrying platform 11 for determining the position information of the edge region of the back side of the wafer carried by the wafer carrying platform.

[0065] The number of edge distance measuring units 15 may be multiple. Exemplarily, the number of edge distance measuring units 15 may be, for example, three, and these three edge distance measuring units 15 are evenly arranged at an angle of 120° in the edge area of ​​the wafer carrier 11 and directly opposite to the edge area of ​​the back side of the wafer 100 carried by the wafer carrier 11, and can be used to determine the position information of three measurement points (in the following description, the measurement points in the edge area may also be referred to as edge measurement points) in the edge area of ​​the back side of the wafer 100 carried by the wafer carrier 11. Exemplarily, the number of edge distance measuring units 15 may be, for example, four, and these four edge distance measuring units 15 are evenly arranged at an angle of 90° in the edge area of ​​the wafer carrier 11 and directly opposite to the edge area of ​​the back side of the wafer 100 carried by the wafer carrier 11, and can be used to determine the position information of four measurement points (in the following description, the measurement points in the edge area may also be referred to as edge measurement points) in the edge area of ​​the back side of the wafer 100 carried by the wafer carrier 11. Of course, the number and layout of the edge distance measuring units 15 may still be changed in other ways.

[0066] The edge distance measuring unit 15 is arranged at the edge area of ​​the wafer carrier 11. The edge distance measuring unit 15 transmits a distance measuring signal in a vertical manner toward the wafer 100 carried by the upper wafer carrier 11. The transmitted distance measuring signal reaches the back of the wafer and is reflected back to the edge distance measuring unit 15. The edge distance measuring unit 15 determines the distance between the measuring point of the edge area of ​​the back of the wafer and the edge distance measuring unit 15 according to the received distance measuring signal. Exemplarily, the edge distance measuring unit 15 can adopt a laser distance measuring sensor, an infrared sensor, or a Doppler distance measuring sensor.

[0067] By using the aforementioned edge distance measuring unit 15, the distance between the back edge area of ​​the wafer 100 carried by the wafer carrier 11 and the edge distance measuring unit 15 can be obtained, and the deformation amount of the edge area of ​​the wafer 100 can be determined by comparing the detected distance with the preset wafer edge area standard value. Figure 5 As shown, when the edge distance measurement result obtained by the edge distance measurement unit 15 (i.e., the distance L1 between the edge area of ​​the back side of the wafer 100 and the edge distance measurement unit 15) is less than the lower limit of the edge area standard range, it indicates that the edge area of ​​the wafer is in a downward folding deformation. Figure 6 As shown, when the edge distance measurement result obtained by the edge distance measurement unit 15 (ie, the distance L2 between the edge area on the back of the wafer 100 and the edge distance measurement unit 15) is greater than the upper limit of the edge area standard range, it indicates that the edge area of ​​the wafer is in an upward deformation.

[0068] The wafer carrying device also includes an adsorption device associated with the wafer carrying platform 11 .

[0069] In the present disclosure, the adsorption device may include a central adsorption unit 171 located in the central area of ​​the wafer carrying platform 11 and an edge adsorption unit 173 located at the edge of the wafer carrying platform 11 .

[0070] See also Figure 7 , displayed as Figure 2 A schematic structural diagram of a wafer supporting device in one embodiment at a certain viewing angle.

[0071] Combination Figure 2 and Figure 7 The central adsorption unit 171 includes at least one central groove 1711 disposed in the central area of ​​the wafer carrier 11 , and a central suction port 1712 is disposed in each central groove 1711 .

[0072] In such Figure 7In the illustrated embodiment, a central groove 1711 is provided in the central region of the wafer carrier 11. The central groove 1711 may be, for example, a circular groove formed in the central region of the wafer carrier 11. The circular groove and the wafer carrier 11 are arranged concentrically. The diameter and depth of the circular groove may be set differently according to factors such as the size of the wafer carrier 11, the size of the wafer 100 carried by the wafer carrier 11, and the process of the wafer 100. When the wafer 100 is placed on the wafer carrier 11, the circular groove and the wafer 100 may form a central chamber that can be sealed, and air is sucked through the central air inlet 1712, so that a gas pressure that can adsorb the wafer 100 is formed in the central chamber.

[0073] In addition, the shape of the central groove 1711 is not limited to a circular groove. For example, in some optional embodiments, the central groove can be implemented as an annular groove. The number of the annular grooves can be one or more. The one or more annular grooves are arranged concentrically with the wafer carrier 11 (such as Figure 8 In some optional embodiments, the central groove 1711 may be implemented as an arc groove, and the number of the arc groove may be one or more, and the one or more arc grooves are arranged concentrically with the wafer carrier 11. For example, the arc groove may be, for example, a 1 / 6 arc groove, a 1 / 4 arc groove, a 1 / 3 arc groove, a 1 / 2 arc groove, or an arc groove of other angles.

[0074] A plurality of central air intake ports 1712 are provided in the central groove 1711, and the plurality of central air intake ports 1712 can be arranged in the central groove 1711 in an evenly spaced manner. The central air intake port 1712 can be arranged in different ways. In some optional embodiments, the central air intake port 1712 can be implemented as being arranged at the bottom of the central groove 1711. In some optional embodiments, the central air intake port can be implemented to protrude from the central groove through an air intake duct and be lower than the bearing surface of the wafer carrier, and at the same time, when necessary, the central air intake port can adjust the distance between it and the central area of ​​the wafer carried by the wafer carrier through the air intake duct.

[0075] Similarly, the edge suction unit 173 includes at least one edge groove 1731 disposed at the edge region of the wafer supporting platform 11 , and an edge suction port 1732 is disposed in each edge groove 1731 .

[0076] In such Figure 7In the illustrated embodiment, an edge groove 1731 is provided at the edge of the wafer carrier 11. The edge groove 1731 may be, for example, an annular groove formed at the edge of the wafer carrier 11. The annular groove and the wafer carrier 11 are arranged concentrically. The width and depth of the annular groove may be set differently according to factors such as the size of the wafer carrier 11, the size of the wafer 100 carried by the wafer carrier 11, and the process of the wafer 100. When the wafer 100 is placed on the wafer carrier 11, the annular groove and the wafer 100 may form an edge chamber that can be sealed, and air is sucked through the edge suction port 1732, so that a gas pressure that can adsorb the wafer 100 is formed in the edge chamber.

[0077] In addition, the shape of the edge groove 1731 is not limited to an annular groove. For example, in some optional embodiments, the edge groove 1731 may be implemented as an arc groove, and the number of the arc grooves may be one or more. The one or more arc grooves are arranged concentrically with the wafer carrier 11. By way of example, the arc groove may be, for example, a 1 / 6 arc groove, a 1 / 4 arc groove, a 1 / 3 arc groove, a 1 / 2 arc groove, or an arc groove of other angles, etc.

[0078] A plurality of edge air intake ports 1732 are provided in the edge groove 1731, and the plurality of edge air intake ports 1732 can be arranged in the edge groove 1731 in an evenly spaced manner. The edge air intake ports 1732 can be arranged in different ways. In some optional embodiments, the edge air intake ports 1732 can be implemented as being arranged at the bottom of the edge groove 1731). In some optional embodiments, the edge air intake ports can be implemented as being protruded from the edge groove through an air intake duct and being lower than the carrying surface of the wafer carrier, and at the same time, when necessary, the edge air intake ports can be adjusted through the air intake duct to adjust the distance between the edge area of ​​the wafer carried by the wafer carrier.

[0079] It is worth noting that in the present disclosure, the wafer carrier has at least one central bearing surface corresponding to the at least one central groove and at least one edge bearing surface corresponding to the at least one edge groove, and the bearing height of the at least one central bearing surface is greater than or equal to the bearing height of the at least one edge bearing surface. Figure 2 or Figure 7 In the embodiment shown, the wafer carrier 11 has a central bearing surface 111 corresponding to the central groove 1711 and an edge bearing surface 113 corresponding to the edge groove 1731, wherein the bearing height of the central bearing surface 111 is greater than or equal to the bearing height of the edge bearing surface 113. In this way, the wafer 100 can be more firmly adsorbed and the position of the central area of ​​the wafer 100 and / or the position of the edge area of ​​the wafer 100 can be adjusted more easily.

[0080] See also Fig. 9 , displayed as Figure 2 A schematic diagram of an adsorption device in one embodiment.

[0081] The central adsorption unit also includes a central pipeline 1713 connected to the central air intake port 1712 and a central drainage bypass 1714 connected to the central pipeline 1713, and the edge adsorption unit also includes an edge pipeline 1733 connected to the edge air intake port 1732 and an edge drainage bypass 1734 connected to the edge pipeline 1733, wherein the central pipeline 1713 and the edge pipeline 1733 are connected to a common air source 178, and the central drainage bypass 1714 and the edge drainage bypass 1734 are connected to a common air pump 179.

[0082] The various components in the central adsorption unit are described in detail below.

[0083] In some embodiments, a central air pressure controller 17131 and a first central pneumatic valve 17132 are provided on the central pipeline 1713 .

[0084] The central gas pressure controller 17131 may be, for example, a universal pressure controller (UPC), which is used to control the pressure of the gas output from the common gas source 178 to maintain a constant pressure. For example, according to the requirements of the process technology, at least one pressure setting value is configured, and the central gas pressure controller 17131 monitors the pressure of the gas flowing in the central pipeline 1713 in real time, compares the pressure of the flowing gas with the pressure setting value, and controls the opening of the first central pneumatic valve 17132 according to the comparison result to ensure that the pressure of the flowing gas meets the pressure setting value.

[0085] In some embodiments, a central one-way valve 17133 may be further provided on the central pipeline 1713 to ensure that the gas is unidirectionally output from the common gas source 178 to the central groove of the reaction chamber 10 .

[0086] The central drainage bypass 1714 is connected to the central pipeline 1713, and a second central pneumatic valve 17141 with a throttle (Orifice) is provided on the central drainage bypass 1714. The second central pneumatic valve 17141 is connected to the common air pump 179 through an exhaust pipeline. The function of the central drainage bypass 1714 is to cooperate with the central pipeline 1713 to achieve pressure control when the central adsorption unit works normally.

[0087] The central adsorption unit further includes a central balancing bypass 1715 connected in parallel with the central drainage bypass 1714, one end of the central balancing bypass 1715 is connected to the central pipeline 1713, and the other end of the central balancing bypass 1715 is connected to the common air pump 179. In some embodiments, a third central pneumatic valve 17151 is provided on the central balancing bypass 1715, and the third central pneumatic valve 17151 is connected to the common air pump 179 through an exhaust pipeline. The function of the central balancing bypass 1715 is to perform a pressure balancing operation before the operation of the central adsorption unit, that is, the central balancing bypass 1715 is opened before the normal operation of the central adsorption unit, so that the pipeline pressure between the central air pressure controller 17131 and the central check valve 17133 in the central pipeline 1713 reaches a target value, and after completion, the central balancing bypass 1715 is closed.

[0088] The following is a detailed description of each component in the edge adsorption unit.

[0089] In some embodiments, an edge air pressure controller 17331 and a first edge pneumatic valve 17332 are provided on the edge pipeline 1733 .

[0090] The edge gas pressure controller 17331 may be, for example, a universal pressure controller (UPC), which is used to control the pressure of the gas output from the common gas source 178 to maintain a constant pressure. For example, according to the requirements of the process technology, at least one pressure setting value is configured, and the edge gas pressure controller 17331 monitors the pressure of the gas flowing in the edge pipeline 1733 in real time, compares the pressure of the flowing gas with the pressure setting value, and controls the opening of the first edge pneumatic valve 17332 according to the comparison result to ensure that the pressure of the flowing gas meets the pressure setting value.

[0091] In some embodiments, an edge one-way valve 17333 may be further provided on the edge pipeline 1733 to ensure that the gas is unidirectionally output from the common gas source 178 to the edge groove of the reaction chamber 10 .

[0092] The edge drainage bypass 1734 is connected to the edge pipeline 1733, and a second edge pneumatic valve 17341 with a throttle (Orifice) is provided on the edge drainage bypass 1734. The second edge pneumatic valve 17341 is connected to the common air pump 179 through an exhaust pipeline. The function of the edge drainage bypass 1734 is to cooperate with the edge pipeline 1733 to achieve pressure control when the edge adsorption unit works normally.

[0093] The edge adsorption unit further includes an edge balancing bypass 1735 connected in parallel with the edge drainage bypass 1734, one end of the edge balancing bypass 1735 is connected to the edge pipeline 1733, and the other end of the edge balancing bypass 1735 is connected to the common air pump 179. In some embodiments, a third edge pneumatic valve 17351 is provided on the edge balancing bypass 1735, and the third edge pneumatic valve 17351 is connected to the common air pump 179 through an exhaust pipeline. The function of the edge balancing bypass 1735 is to perform a pressure balancing operation before the edge adsorption unit is operated, that is, the edge balancing bypass 1735 is opened before the edge adsorption unit works normally, so that the pipeline pressure between the edge air pressure controller 17331 and the edge check valve 17333 in the edge pipeline 1733 reaches a target value, and after completion, the edge balancing bypass 1735 is closed.

[0094] See also Fig.10 , displayed as Figure 2 A schematic diagram of an adsorption device in another embodiment.

[0095] The central adsorption unit further includes a central air control component connected to the central air intake port 1712 .

[0096] In some embodiments, the central air control component may further include: a central pipeline 1713 and a central drainage bypass 1714 connected to the central pipeline 1713, wherein one end of the central pipeline 1713 is connected to the central air intake port 1712, and the other end of the central pipeline 1713 is connected to the central air source 1716, one end of the central drainage bypass 1714 is connected to the central pipeline 1713, and the other end of the central drainage bypass 1714 is connected to the central air pump 1717.

[0097] In some embodiments, a central air pressure controller 17131 and a first central pneumatic valve 17132 are provided on the central pipeline 1713 .

[0098] The central gas pressure controller 17131 may be, for example, a universal pressure controller (UPC), which is used to control the pressure of the gas output by the central gas source 1716 to maintain a constant pressure. For example, according to the requirements of the process technology, at least one pressure setting value is configured, and the central gas pressure controller 17131 monitors the pressure of the gas flowing in the central pipeline 1713 in real time, compares the pressure of the flowing gas with the pressure setting value, and controls the opening of the first central pneumatic valve 17132 according to the comparison result to ensure that the pressure of the flowing gas meets the pressure setting value.

[0099] In some embodiments, a central one-way valve 17133 may be further provided on the central pipeline 1713 to ensure that the gas is unidirectionally output from the central gas source 1716 to the central groove of the reaction chamber 10 .

[0100] The central drainage bypass 1714 is connected to the central pipeline 1713, and a second central pneumatic valve 17141 with a throttle (Orifice) is provided on the central drainage bypass 1714. The second central pneumatic valve 17141 is connected to the central air pump 1717 through an exhaust pipeline. The function of the central drainage bypass 1714 is to cooperate with the central pipeline 1713 to achieve pressure control when the central adsorption unit works normally.

[0101] The central adsorption unit further includes a central balancing bypass 1715 connected in parallel with the central drainage bypass 1714, one end of the central balancing bypass 1715 is connected to the central pipeline 1713, and the other end of the central balancing bypass 1715 is connected to the central air pump 1717. In some embodiments, a third central pneumatic valve 17151 is provided on the central balancing bypass 1715, and the third central pneumatic valve 17151 is connected to the central air pump 1717 through an exhaust pipeline. The function of the central balancing bypass 1715 is to perform a pressure balancing operation before the operation of the central adsorption unit, that is, the central balancing bypass 1715 is opened before the central adsorption unit works normally, so that the pipeline pressure between the central air pressure controller 17131 and the central check valve 17133 in the central pipeline 1713 reaches a target value, and after completion, the central balancing bypass 1715 is closed.

[0102] The edge suction unit further includes an edge air control component connected to the edge suction port 1732 .

[0103] In some embodiments, the edge gas control component may further include: an edge pipeline 1733 and an edge drainage bypass 1734 connected to the edge pipeline 1733, wherein one end of the edge pipeline 1733 is connected to the edge air inlet 1732, the other end of the edge pipeline 1733 is connected to the edge gas source 1736, one end of the edge drainage bypass 1734 is connected to the edge pipeline 1733, and the other end of the edge drainage bypass 1734 is connected to the edge air pump 1737.

[0104] In some embodiments, an edge air pressure controller 17331 and a first edge pneumatic valve 17332 are provided on the edge pipeline 1733 .

[0105] The edge gas pressure controller 17331 may be, for example, a universal pressure controller (UPC), which is used to control the pressure of the gas output by the edge gas source 1736 to maintain a constant pressure. For example, according to the requirements of the process technology, at least one pressure setting value is configured, and the edge gas pressure controller 17331 monitors the pressure of the gas flowing in the edge pipeline 1733 in real time, compares the pressure of the flowing gas with the pressure setting value, and controls the opening of the first edge pneumatic valve 17332 according to the comparison result to ensure that the pressure of the flowing gas meets the pressure setting value.

[0106] In some embodiments, an edge one-way valve 17333 may be further provided on the edge pipeline 1733 to ensure that the gas is output from the edge gas source 1736 to the edge groove of the reaction chamber 10 in a one-way manner.

[0107] The edge drainage bypass 1734 is connected to the edge pipeline 1733, and a second edge pneumatic valve 17341 with a throttle (Orifice) is provided on the edge drainage bypass 1734. The second edge pneumatic valve 17341 is connected to the edge air pump 1737 through the exhaust pipeline. The function of the edge drainage bypass 1734 is to cooperate with the edge pipeline 1733 to achieve pressure control when the edge adsorption unit works normally.

[0108] The edge adsorption unit further includes an edge balancing bypass 1735 connected in parallel with the edge drainage bypass 1734, one end of the edge balancing bypass 1735 is connected to the edge pipeline 1733, and the other end of the edge balancing bypass 1735 is connected to the edge air pump 1737. In some embodiments, a third edge pneumatic valve 17351 is provided on the edge balancing bypass 1735, and the third edge pneumatic valve 17351 is connected to the edge air pump 1737 through an exhaust pipeline. The function of the edge balancing bypass 1735 is to perform a pressure balancing operation before the edge adsorption unit is operated, that is, the edge balancing bypass 1735 is opened before the edge adsorption unit works normally, so that the pipeline pressure between the edge air pressure controller 17331 and the edge check valve 17333 in the edge pipeline 1733 reaches a target value, and after completion, the edge balancing bypass 1735 is closed.

[0109] Regardless of whether Fig. 9 The central adsorption unit and the edge adsorption unit shown in the figure still adopt the following method: Fig.10 The central adsorption unit and the edge adsorption unit shown can adjust the adsorption pressure of the central area of ​​the wafer through the central adsorption unit to compensate for the deformation of the wafer in the central area, and can adjust the adsorption pressure of the edge area of ​​the wafer through the edge adsorption unit to compensate for the deformation of the wafer in the edge area.

[0110] The wafer carrier device of the present disclosure further includes a control unit (such as Figures 2 to 6 The control unit 19 shown in the figure is associated with the central distance measuring unit, the edge distance measuring unit and the adsorption device, and is used to control the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central distance measuring result of the central distance measuring unit and the edge distance measuring result of the edge distance measuring unit, so as to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer supporting table in a flat posture.

[0111] In some embodiments, the control unit controls the central adsorption unit in the adsorption device to adjust the adsorption pressure at the central area of ​​the wafer based on the central distance measurement result of the central distance measurement unit to compensate for the deformation of the central area of ​​the wafer.

[0112] In some embodiments, the control unit controls the edge adsorption unit in the adsorption device to adjust the adsorption pressure at the edge area of ​​the wafer based on the edge distance measurement result of the edge distance measurement unit to compensate for the deformation of the edge area of ​​the wafer.

[0113] In some embodiments, the control unit controls the central adsorption unit in the adsorption device to adjust the adsorption pressure at the central area of ​​the wafer based on the central distance measurement result of the central distance measurement unit to compensate for the deformation of the central area of ​​the wafer. And, the control unit controls the edge adsorption unit in the adsorption device to adjust the adsorption pressure at the edge area of ​​the wafer based on the edge distance measurement result of the edge distance measurement unit to compensate for the deformation of the edge area of ​​the wafer.

[0114] Exemplarily, the control unit obtains the central distance measurement result of the central distance measurement unit. When the obtained central distance measurement result is less than the lower limit value of the standard range of the central area, it indicates that the central area of ​​the wafer is in an upward arch deformation, that is, the pressure in the central area of ​​the back side of the wafer is higher than the pressure in the reaction chamber. At this time, the control unit controls the central adsorption unit in the adsorption device to reduce the pressure and be lower than the pressure in the reaction chamber, so that the central area of ​​the wafer is subjected to downward pressure and tends to move downward to tend to a flat state, thereby compensating for the upward arch deformation of the wafer.

[0115] Exemplarily, the control unit obtains a central distance measurement result of a central distance measurement unit. When the obtained central distance measurement result is greater than the upper limit value of a standard range of the central area, it indicates that the central area of ​​the wafer is in a sinking deformation, that is, the pressure in the central area of ​​the back side of the wafer is lower than the pressure in the reaction chamber. At this time, the control unit controls the central adsorption unit in the adsorption device to increase the pressure to a level higher than the pressure in the reaction chamber, so that the central area of ​​the wafer is subjected to an upward pressure and tends to move upward to tend to a flat state, thereby compensating for the sinking deformation of the wafer.

[0116] Exemplarily, the control unit obtains an edge distance measurement result of an edge distance measurement unit. When the obtained edge distance measurement result is less than the lower limit value of the standard range of the edge area, it indicates that the central area of ​​the wafer is in a downward folding deformation, that is, the pressure at the edge area on the back side of the wafer is lower than the pressure in the reaction chamber. At this time, the control unit controls the edge adsorption unit in the adsorption device to increase the pressure to be higher than the pressure in the reaction chamber, so that the edge area of ​​the wafer is subjected to upward pressure and tends to move upward to tend to a flat state, thereby compensating for the downward folding deformation of the wafer.

[0117] Exemplarily, the control unit obtains an edge distance measurement result of an edge distance measurement unit. When the obtained edge distance measurement result is greater than the upper limit value of the standard range of the edge area, it indicates that the central area of ​​the wafer is in an upward deformation, that is, the pressure at the edge area on the back side of the wafer is higher than the pressure in the reaction chamber. At this time, the control unit controls the edge adsorption unit in the adsorption device to reduce the pressure and lower than the pressure in the reaction chamber, so that the edge area of ​​the wafer is subjected to downward pressure and tends to move downward to tend to a flat state, thereby compensating for the upward deformation of the wafer.

[0118] In some embodiments, the control unit may be, for example, a host computer, which is connected to the central distance measuring unit, the edge distance measuring unit, the central adsorption unit and the edge adsorption unit (such as Fig. 9 The common gas source 178, the common air pump 179, and various pneumatic valves shown, or as Fig.10 The central gas source 1716, central air pump 1717, edge gas source 1736, edge air pump 1737, and various pneumatic valves, etc. are shown).

[0119] The embodiments of the present disclosure provide a wafer processing device and a wafer carrier thereof, wherein the wafer carrier comprises: a wafer carrier table, a central distance measuring unit, an edge distance measuring unit, an adsorption device, and a control unit, wherein the central distance measuring unit is used to determine the position information of the central area of ​​the front side of the wafer carried by the wafer carrier table, and the edge distance measuring unit is used to determine the position information of the edge area of ​​the back side of the wafer carried by the wafer carrier table. The control unit controls the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central distance measuring result of the central distance measuring unit and the edge distance measuring result of the edge distance measuring unit, so as to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer carrier table in a flat posture. Compared with the related art, the wafer carrying device and wafer processing equipment provided by the present invention can detect the position information of the detection points in the central area of ​​the wafer and the position information of each detection point in the edge area of ​​the wafer in real time, and control the central adsorption unit and / or edge adsorption unit of the adsorption device to adjust the adsorption pressure, thereby adjusting the relative position of the central area and / or edge area of ​​the wafer with the wafer carrying platform, and can adjust the carrying capacity of wafers with different degrees of warping, which is more conducive to the subsequent wafer process technology and improves the quality of the wafer process.

[0120] The present application further discloses a wafer carrying method, which is applied to the wafer carrying device as described above, wherein the wafer carrying device at least includes a wafer carrying table, a central distance measuring unit, an edge distance measuring unit, an adsorption device, and a control unit.

[0121] See also Fig.11 , which is a schematic diagram of the process of the wafer carrying method disclosed in one embodiment.

[0122] like Fig.11 As shown, the wafer carrying method comprises the following steps:

[0123] Step S201, placing a wafer on a wafer carrying table in a reaction chamber.

[0124] In some embodiments, the wafer to be processed may be transferred into the reaction chamber by a robot and placed on a wafer carrier.

[0125] Step S203, using the central distance measuring unit to determine the position information of the central area of ​​the front side of the wafer and using the edge distance measuring unit to determine the position information of the edge area of ​​the back side of the wafer, so as to obtain the warpage change of the wafer.

[0126] The use of the central distance measuring unit to measure the distance of the central area of ​​the front side of the wafer and the use of the edge distance measuring unit to measure the distance of the edge area of ​​the back side of the wafer can be implemented at any stage of the wafer processing process. In some embodiments, before the wafer is subjected to thin film deposition processing, the central distance measuring unit is used to determine the position information of the central area of ​​the front side of the wafer and the edge distance measuring unit is used to determine the position information of the edge area of ​​the back side of the wafer. In some embodiments, during the thin film deposition process of the wafer, the central distance measuring unit is used to determine the position information of the central area of ​​the front side of the wafer and the edge distance measuring unit is used to determine the position information of the edge area of ​​the back side of the wafer.

[0127] Taking the central ranging unit as an example, the central ranging unit is located directly above the wafer carrier, and the central ranging unit transmits a ranging signal in a vertical manner toward the wafer carried by the wafer carrier below. The transmitted ranging signal reaches the front side of the wafer and is reflected back to the central ranging unit. The central ranging unit determines the distance between the measuring point in the central area of ​​the front side of the wafer and the central ranging unit based on the received ranging signal.

[0128] If the distance between the central area of ​​the front side of the wafer and the central distance measuring unit obtained by the central distance measuring unit is within the preset central area standard range, it indicates that the central area of ​​the wafer is within the allowable deformation range. If the distance between the central area of ​​the front side of the wafer and the central distance measuring unit obtained by the central distance measuring unit is less than the lower limit of the central area standard range, it indicates that the central area of ​​the wafer is in an upward arch deformation. If the distance between the central area of ​​the front side of the wafer and the central distance measuring unit obtained by the central distance measuring unit is greater than the upper limit of the central area standard range, it indicates that the central area of ​​the wafer is in a downward sinking deformation.

[0129] Taking the edge ranging unit as an example, the edge ranging unit is arranged at the edge of the wafer supporting platform, and the edge ranging unit transmits a ranging signal vertically toward the wafer carried by the wafer supporting platform above. The transmitted ranging signal reaches the back of the wafer and is reflected back to the edge ranging unit. The edge ranging unit determines the distance between the measuring point in the edge area of ​​the back of the wafer and the edge ranging unit based on the received ranging signal.

[0130] If the distance between the edge area of ​​the back side of the wafer obtained by the edge distance measuring unit and the edge distance measuring unit is within the preset edge area standard range, it indicates that the edge area of ​​the wafer is within the allowable deformation range. If the distance between the edge area of ​​the back side of the wafer obtained by the edge distance measuring unit and the edge distance measuring unit is less than the lower limit of the edge area standard range, it indicates that the edge area of ​​the wafer is in a downward folding deformation. If the distance between the edge area of ​​the back side of the wafer obtained by the edge distance measuring unit and the edge distance measuring unit is greater than the upper limit of the edge area standard range, it indicates that the edge area of ​​the wafer is in an upward warping deformation.

[0131] Step S205, using the control unit to control the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central distance measurement result of the central distance measurement unit and the edge distance measurement result of the edge distance measurement unit, so as to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer carrier in a flat posture.

[0132] In some embodiments, based on the central distance measurement result of the central distance measurement unit, the central adsorption unit in the adsorption device is controlled to adjust the adsorption pressure at the central area of ​​the wafer to compensate for the deformation of the central area of ​​the wafer.

[0133] In some embodiments, based on the edge distance measurement result of the edge distance measurement unit, the edge adsorption unit in the adsorption device is controlled to adjust the adsorption pressure at the edge area of ​​the wafer to compensate for the deformation of the edge area of ​​the wafer.

[0134] In some embodiments, based on the central distance measurement result of the central distance measurement unit, the central adsorption unit in the adsorption device is controlled to adjust the adsorption pressure at the central area of ​​the wafer to compensate for the deformation of the central area of ​​the wafer. And based on the edge distance measurement result of the edge distance measurement unit, the edge adsorption unit in the adsorption device is controlled to adjust the adsorption pressure at the edge area of ​​the wafer to compensate for the deformation of the edge area of ​​the wafer.

[0135] Exemplarily, the control unit obtains the central distance measurement result of the central distance measurement unit. When the obtained central distance measurement result is less than the lower limit value of the standard range of the central area, it indicates that the central area of ​​the wafer is in an upward arch deformation, that is, the pressure in the central area of ​​the back side of the wafer is higher than the pressure in the reaction chamber. At this time, the control unit controls the central adsorption unit in the adsorption device to reduce the pressure and be lower than the pressure in the reaction chamber, so that the central area of ​​the wafer is subjected to downward pressure and tends to move downward to tend to a flat state, thereby compensating for the upward arch deformation of the wafer.

[0136] Exemplarily, the control unit obtains a central distance measurement result of a central distance measurement unit. When the obtained central distance measurement result is greater than the upper limit value of a standard range of the central area, it indicates that the central area of ​​the wafer is in a sinking deformation, that is, the pressure in the central area of ​​the back side of the wafer is lower than the pressure in the reaction chamber. At this time, the control unit controls the central adsorption unit in the adsorption device to increase the pressure to a level higher than the pressure in the reaction chamber, so that the central area of ​​the wafer is subjected to an upward pressure and tends to move upward to tend to a flat state, thereby compensating for the sinking deformation of the wafer.

[0137] Exemplarily, the control unit obtains an edge distance measurement result of an edge distance measurement unit. When the obtained edge distance measurement result is less than the lower limit value of the standard range of the edge area, it indicates that the central area of ​​the wafer is in a downward folding deformation, that is, the pressure at the edge area on the back side of the wafer is lower than the pressure in the reaction chamber. At this time, the control unit controls the edge adsorption unit in the adsorption device to increase the pressure to be higher than the pressure in the reaction chamber, so that the edge area of ​​the wafer is subjected to upward pressure and tends to move upward to tend to a flat state, thereby compensating for the downward folding deformation of the wafer.

[0138] Exemplarily, the control unit obtains an edge distance measurement result of an edge distance measurement unit. When the obtained edge distance measurement result is greater than the upper limit value of the standard range of the edge area, it indicates that the central area of ​​the wafer is in an upward deformation, that is, the pressure at the edge area on the back side of the wafer is higher than the pressure in the reaction chamber. At this time, the control unit controls the edge adsorption unit in the adsorption device to reduce the pressure and lower than the pressure in the reaction chamber, so that the edge area of ​​the wafer is subjected to downward pressure and tends to move downward to tend to a flat state, thereby compensating for the upward deformation of the wafer.

[0139] The wafer carrying method provided by the embodiment of the present disclosure can use the central distance measuring unit to determine the position information of the central area of ​​the front side of the wafer carried by the wafer carrying table and use the edge distance measuring unit to determine the position information of the edge area of ​​the back side of the wafer carried by the wafer carrying table. In this way, it can be determined whether there is deformation in the central area and the edge area of ​​the wafer. Based on the distance measuring results, the central adsorption unit in the adsorption device is controlled to adjust the adsorption pressure at the central area of ​​the wafer to compensate for the deformation of the central area of ​​the wafer, and the edge adsorption unit in the adsorption device is controlled to adjust the adsorption pressure at the edge area of ​​the wafer to compensate for the deformation of the edge area of ​​the wafer, thereby ensuring that the wafer is placed on the wafer carrying table in a flat posture.

[0140] The present disclosure also provides a host computer, see Fig.12 , which is a principle block diagram of the host computer in one embodiment of the present disclosure.

[0141] like Fig.12 As shown, the host computer includes a processor 31 and a memory 33. The processor 31 and the memory 33 can communicate with each other through a bus 32. An adsorption control program can be stored in the memory 33. The processor 31 executes each step in the wafer carrying method by running the adsorption control program in the memory 33.

[0142] The bus 32 may be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. The bus may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, although only one thick line is used in the figure, it does not mean that there is only one bus or one type of bus.

[0143] In some embodiments, the processor 31 may be implemented as a central processing unit (CPU), a microprocessor unit (MCU), a system on chip (SoC), or a field programmable gate array (FPGA). The memory 33 may include a volatile memory for temporary storage of data when running a program, such as a random access memory (RAM). The memory 33 may also include a non-volatile memory (NVM) for data storage, such as a read-only memory (ROM), a flash memory, a hard disk drive (HDD), or a solid-state disk (SSD).

[0144] In actual applications, the host computer can be associated with the central distance measuring unit, the edge distance measuring unit in the wafer carrying device, and the central adsorption unit and the edge adsorption unit in the adsorption device, so as to realize the detection of the deformation of the central area and the edge area of ​​the wafer carried by the wafer carrying table, and based on the detection results, the adsorption pressure of the central area of ​​the wafer is adjusted by the central adsorption unit and / or the adsorption pressure of the edge area of ​​the wafer is adjusted by the edge adsorption unit to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer carrying table in a flat posture, which is more conducive to the subsequent wafer processing technology and improves the quality of the wafer process.

[0145] The above embodiments are merely illustrative of the principles and effects of the present disclosure, and are not intended to limit the present disclosure. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present disclosure shall still be covered by the protection scope of the present disclosure.

Claims

1. A wafer carrying device, characterized in that: include: A wafer carrying platform is arranged in the reaction chamber and is used to carry the wafer; A central distance measuring unit, disposed above the central area of ​​the wafer carrying platform, for determining position information of the central area of ​​the front side of the wafer carried by the wafer carrying platform; An edge distance measuring unit, provided at an edge area of ​​the wafer carrying platform, for determining position information of an edge area of ​​the back side of the wafer carried by the wafer carrying platform; The adsorption device comprises a central adsorption unit located in the central area of ​​the wafer carrying platform and an edge adsorption unit located in the edge area of ​​the wafer carrying platform; as well as A control unit, associated with the central distance measuring unit, the edge distance measuring unit and the adsorption device, for controlling the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central distance measuring result of the central distance measuring unit and the edge distance measuring result of the edge distance measuring unit, so as to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer carrying table in a flat posture; Wherein, the central adsorption unit includes: at least one central groove arranged in the central area of ​​the wafer carrier, a central air suction port arranged in the at least one central groove, a central pipeline connected to the central air suction port, and a central drainage bypass connected to the central pipeline; the edge adsorption unit includes: at least one edge groove arranged in the edge area of ​​the wafer carrier, an edge air suction port arranged in the at least one edge groove, an edge pipeline connected to the edge air suction port, and an edge drainage bypass connected to the edge pipeline; the central pipeline and the edge pipeline are connected to a common gas source, and the central drainage bypass and the edge drainage bypass are connected to a common air pump; or, The central adsorption unit includes: at least one central groove arranged in the central area of ​​the wafer carrier, a central air suction port arranged in the at least one central groove, and a central air control component connected to the central air suction port; the edge adsorption unit includes: at least one edge groove arranged in the edge area of ​​the wafer carrier, an edge air suction port arranged in the at least one edge groove, and an edge air control component connected to the edge air suction port; the control unit is associated with the central air control component and the edge air control component.

2. The wafer carrier device according to claim 1, characterized in that: In the case where the central adsorption unit and the edge adsorption unit are jointly connected to a common air pump, the central adsorption unit also includes a central balancing bypass, one end of which is connected to the central pipeline, and the other end of which is connected to the common air pump; the edge adsorption unit also includes an edge balancing bypass, one end of which is connected to the edge pipeline, and the other end of which is connected to the common air pump.

3. The wafer carrier device according to claim 1, characterized in that: The central air control component includes: a central pipeline, one end of which is connected to the central air intake port, and the other end of which is connected to the central air source; a central drainage bypass, one end of which is connected to the central pipeline, and the other end of which is connected to the central air pump; the edge air control component includes: an edge pipeline, one end of which is connected to the edge air intake port, and the other end of which is connected to the edge air source; an edge drainage bypass, one end of which is connected to the edge pipeline, and the other end of which is connected to the edge air pump.

4. The wafer carrier device according to claim 3, characterized in that: The central air control component also includes a central balancing bypass, one end of which is connected to the central pipeline, and the other end of which is connected to the central air pump; the edge air control component also includes an edge balancing bypass, one end of which is connected to the edge pipeline, and the other end of which is connected to the edge air pump.

5. The wafer carrier device according to claim 1, characterized in that: The central groove is a circular groove, or an annular groove, or an arc groove, and the edge groove is an annular groove or an arc groove.

6. The wafer carrier device according to claim 1 or 3, characterized in that: A central air pressure controller and a first central pneumatic valve are provided on the central pipeline, and a second central pneumatic valve with a throttle is provided on the central drainage bypass; an edge air pressure controller and a first edge pneumatic valve are provided on the edge pipeline, and a second edge pneumatic valve with a throttle is provided on the edge drainage bypass.

7. The wafer carrier device according to claim 2 or 4, characterized in that: A third central pneumatic valve is provided on the central balancing bypass, and a third edge pneumatic valve is provided on the edge balancing bypass.

8. The wafer carrier device according to claim 1, characterized in that: In the wafer supporting platform, there is at least one central supporting surface corresponding to the at least one central groove and at least one edge supporting surface corresponding to the at least one edge groove, and the supporting height of the at least one central supporting surface is greater than or equal to the supporting height of the at least one edge supporting surface.

9. The wafer carrying device according to claim 1, characterized in that: At least one central distance measuring unit is provided above the central area of ​​the wafer carrier; the central distance measuring unit determines the distance between the central area of ​​the front side of the wafer and the central distance measuring unit by sending and receiving distance measuring signals toward the wafer below; a plurality of edge distance measuring units are provided in the edge area of ​​the wafer carrier; the edge distance measuring units determine the distance between the edge area of ​​the back side of the wafer and the edge distance measuring units by sending and receiving distance measuring signals toward the wafer above.

10. A wafer carrying method, characterized in that: Applied to the wafer carrying device according to any one of claims 1 to 9, the wafer carrying method comprises the following steps: placing a wafer on a wafer carrier in a reaction chamber; Determine the position information of the central area of ​​the front side of the wafer by using a central distance measuring unit and determine the position information of the edge area of ​​the back side of the wafer by using an edge distance measuring unit to obtain the warpage change of the wafer; as well as A control unit is used to control the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central distance measurement result of the central distance measurement unit and the edge distance measurement result of the edge distance measurement unit to compensate for the deformation of the wafer and ensure that the wafer is placed on the wafer supporting platform in a flat posture.

11. The wafer carrying method according to claim 10, characterized in that: The control unit controls the central adsorption unit and / or the edge adsorption unit in the adsorption device to adjust the adsorption pressure based on the central distance measurement result of the central distance measurement unit and the edge distance measurement result of the edge distance measurement unit, including: When the central distance measurement result obtained by the central distance measurement unit is less than the lower limit value of the standard range of the central area, the central adsorption unit in the adsorption device is controlled to reduce the pressure to be lower than the pressure in the reaction chamber, so that the central area of ​​the wafer is subjected to downward pressure; When the central distance measurement result obtained by the central distance measurement unit is greater than the upper limit value of the standard range of the central area, the central adsorption unit in the adsorption device is controlled to increase the pressure to be higher than the pressure in the reaction chamber, so that the central area of ​​the wafer is subjected to upward pressure; When the central distance measurement result obtained by the edge distance measurement unit is less than the lower limit value of the standard range of the edge area, the edge adsorption unit in the adsorption device is controlled to increase the pressure to be higher than the pressure in the reaction chamber, so that the edge area of ​​the wafer is subjected to upward pressure; When the central distance measurement result obtained by the edge distance measurement unit is greater than the upper limit value of the standard range of the edge area, the edge adsorption unit in the adsorption device is controlled to reduce the pressure and be lower than the pressure in the reaction chamber, so that the edge area of ​​the wafer is subjected to downward pressure.

12. A wafer processing device, characterized in that: include: a reaction chamber; as well as The wafer carrier device according to any one of claims 1 to 9.

13. A host computer, characterized in that: include: processor; A memory storing an adsorption control program; Wherein, when the adsorption control program is executed by the processor, the wafer carrying method as described in claim 10 or 11 is executed.

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