A schottky diode based on-chip topology state modulator

Abstract

The application discloses a kind of on-chip topological state modulators based on Schottky diode, including electromagnetic wave input area, metal film topological structure transmission area, control signal feed-in area, electromagnetic wave output area, the metal film topological structure transmission area is by several two different cells and is arranged according to hexagonal lattice array, and Schottky diode is installed at cell wall boundary, the distribution period of Schottky diode is same with cell lattice constant, and the on-off state of Schottky diode is controlled by the voltage of control signal feed-in area.The application utilizes metal film to construct honeycomb lattice topological structure, breaks space inversion symmetry in topological structure by using structure perturbation to open topological band gap, and by installing Schottky diode at wall boundary, high switch ratio topological boundary state single-mode transmission control can be realized by adjusting and controlling band gap dispersion mode distribution.

Description

Technical Field

[0001] This invention belongs to the field of electromagnetic functional devices, specifically relating to an on-chip topological modulator based on a Schottky diode. Background Technology

[0002] With the continuous development of communication technology, mobile communication frequencies are becoming increasingly higher, and on-chip integrated millimeter-wave-Asia-Pacific Hertz modulation technology has become one of the key technologies to meet the needs of next-generation wireless communication. Existing modulation methods mainly combine on-chip transmission lines with artificial electromagnetic active resonant unit structures, using the changes and layout of the resonant modes of the on-chip artificial microstructures to control transmission characteristics such as frequency, amplitude, phase, and polarization. For example, patents CN116360127A and CN105652475A employ a waveguide-packaged modulation chip approach, fabricating transmission lines and artificial microstructures on a substrate. High electron mobility transistors or diodes are used to switch the resonant modes of the artificial microstructures, thereby controlling the on / off state of the electromagnetic waves transmitted in the waveguide. Due to the excellent electromagnetic shielding characteristics of the metal cavity, high modulation efficiency and modulation rate can be achieved.

[0003] While the aforementioned method achieves on-chip transmission modulation of millimeter-wave-Asia-Pacific Hertz signals, limitations in the modulation principle prevent the achievement of a high switching ratio during mode switching due to the introduction of parasitic modes, thus restricting further improvements in modulation and communication rates. Therefore, a breakthrough in physical principles is urgently needed to develop more robust on-chip modulators.

[0004] Topological photonic crystals are emerging photonic structures based on solid-state physics and topological physics. Due to their robustness to local defects and immunity to corner transmission losses, they have attracted widespread attention in recent years. For example, patent CN116247405B, based on C3 symmetry metal thin-film units, constructs a topological transmission mode in the bandgap by splicing photonic crystal regions with different Chern numbers, providing a highly efficient electromagnetic waveguide based on topological valley boundary states. Although on-chip transmission waveguides based on topological structures have made significant progress, research on topological state-controlled modulators still remains lacking.

[0005] In summary, the existing millimeter-wave-Asia Pacific Hertz wave on-chip modulation technology has the following problems and shortcomings:

[0006] (1) Difficulty in designing the control unit: Millimeter-wave-Asia-Pacific Hertz has short wavelength and high frequency, requiring careful design of the composite active control structure. At the same time, the parasitic parameters introduced by artificial microstructures and transistors are difficult to control, making it difficult to achieve single-mode transmission control, thus affecting the control efficiency.

[0007] (2) Difficulty in power supply wiring: Although the boundary state of the topology can realize single-mode transmission of millimeter wave-Asia Pacific Hertz wave, due to the periodicity of the topology and the large number of units, the power supply wiring is difficult. Existing topology modulators generally use optical control, which makes it difficult to realize on-chip topology transmission control and thus difficult to achieve on-chip integration. Summary of the Invention

[0008] The purpose of this invention is to overcome the above-mentioned defects of the prior art and provide an on-chip topological modulator based on Schottky diodes.

[0009] The objective of this invention is achieved through the following technical solution:

[0010] An on-chip topological state modulator based on a Schottky diode includes an electromagnetic wave input region, a metal thin-film topological structure transmission region, a control signal feeding region, and an electromagnetic wave output region. The electromagnetic wave input / output region is composed of a microstrip line, one end of which is connected to the metal thin-film topological structure transmission region, and the other end is connected to the feed source / receiver via a probe. The metal thin-film topological structure transmission region is composed of several A and B unit cells arranged in a hexagonal lattice array. The A and B unit cells are 180° centrally rotationally symmetrical. The A unit cell region and the B unit cell region are connected in a vertical direction, and a Schottky diode is installed at the domain wall boundary of the A and B unit cells to control the electromagnetic transmission characteristics of the topological boundary state. The distribution period of the Schottky diode is the same as the lattice constant of the unit cell. The on / off state of the Schottky diode is controlled by the voltage of the control signal feeding region.

[0011] Furthermore, unit cell region A and unit cell region B are connected vertically, and the number of unit cell periods in the vertical direction is... ≥ 4.

[0012] Furthermore, the cathode of the Schottky diode is mounted on a topology at the domain wall junction of the unit cell, and grounded by connecting to the back metal plate through a metal via. The anode of the Schottky diode is mounted on a pad, and connected to the signal feed area through a first metal blind via, a middle metal layer, and a second metal blind via connected to the pad. A total of M Schottky diodes are present. ≥ 4.

[0013] Furthermore, each unit cell is composed of three thin metal Y-shaped branches and three thick metal Y-shaped branches that are interleaved and connected.

[0014] Furthermore, the metal film material of the transmission region of the metal film topology is Au, Ag, Cu or Al.

[0015] This invention uses a probe to input electromagnetic waves and a metal thin film to construct a honeycomb lattice topology. In the topology, structural perturbation is used to break the spatial inversion symmetry, thereby opening the topological bandgap. By flip-chip Schottky diodes at the domain wall junctions, the electromagnetic transmission characteristics of the topological boundary states can be controlled by regulating the distribution of the bandgap dispersion modes. Finally, the modulated electromagnetic waves are transmitted out through the probe structure.

[0016] Compared with the prior art, the present invention has the following beneficial effects:

[0017] (1) Single-mode transmission control: The present invention uses a metal thin film periodic structure to construct a topology chip. By controlling the distribution of bandgap dispersion modes in the band structure, the introduction of high-order parasitic modes is avoided, and on-chip electromagnetic wave single-mode transmission control with high switching ratio can be achieved.

[0018] (2) Strong field locality: The present invention utilizes the topological boundary state generated by the metal structure for transmission, which has good electric field locality and avoids energy leakage.

[0019] (3) High integration: The present invention uses a Schottky diode with fast response capability to millimeter wave-Asia-Pacific Hertz wave to control the on and off of the topology state, which can effectively improve the modulation rate; at the same time, it uses an electronic control method for regulation, which does not require a bulky laser source for excitation, resulting in higher integration.

[0020] (4) Easy to manufacture: This invention can be manufactured using multilayer printed circuit board technology and additive manufacturing technology. The technology is mature and the manufacturing cost is low. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the topological modulator described in an embodiment of the present invention;

[0022] Figure 2 This is a side view schematic diagram of the topological state modulator described in an embodiment of the present invention;

[0023] Figure 3 The diagram shows the band structure of the topological modulator described in this embodiment of the invention with and without applied voltage to the Schottky diode.

[0024] Figure 4 This is a transmission curve of the topological modulator described in an embodiment of the present invention under the condition of applied voltage and no applied voltage on the Schottky diode;

[0025] Figure 5 The diagram shows the electric field distribution of the topological modulator described in this embodiment of the invention under both voltage-applied and voltage-free conditions on a Schottky diode.

[0026] The markings in the diagram are: 1. Electromagnetic wave input area; 2. Metal thin film topology transmission area; 3. Control signal feed area; 4. Electromagnetic wave output area; 5. Schottky diode; 6. Metal via; 7. Second metal blind via; 8. First metal blind via; 9. Middle metal layer. Detailed Implementation

[0027] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments, but the scope of protection of the present invention is not limited thereto.

[0028] like Figure 1 As shown, the on-chip topological modulator based on a Schottky diode provided in this embodiment includes an electromagnetic wave input region 1, a metal thin-film topological structure transmission region 2, a control signal feed region 3, an electromagnetic wave output region 4, and a Schottky diode 5. The electromagnetic wave input region 1 and the electromagnetic wave output region 2 are composed of microstrip lines. One end of the microstrip line is connected to the metal thin-film topological structure transmission region 2, and the other end is connected to the feed source / receiver end through a probe. The metal thin-film topological structure transmission region is composed of a plurality of A and B unit cells arranged in a hexagonal lattice array, and the Schottky diode 5 is installed at the domain wall junction of the A and B unit cells. The distribution period of the Schottky diode 5 is the same as the lattice constant a of the unit cell. The on / off state of the Schottky diode 5 is controlled by the voltage of the control signal feed region 3.

[0029] The structure of the metal thin film topology transport region 2 is formed by growing Au on a RO3003 substrate with a dielectric constant of 3. Units A and B are arranged in a hexagonal lattice array, exhibiting 180° central rotational symmetry. Units A and B are connected vertically, with both types of units having a period number of 5 in the vertical direction. Each unit cell consists of three thin metal Y-shaped branches and three thick metal Y-shaped branches interleaved, with the width w2 of the thick metal Y-shaped branches being greater than the width w1 of the thin metal Y-shaped branches.

[0030] The cathode of the Schottky diode 5 at the junction of the domain walls of units A and B is mounted on the topology using a PCB multilayer drilling process, such as... Figure 2 As shown, the cathode of the Schottky diode 5 is connected to the back metal plate through the metal via 6 and grounded. The anode of the Schottky diode 5 is mounted on the pad and connected to the signal feed area 3 through the first metal blind via 8, the middle metal layer 9 and the second metal blind via 7 connected to the pad. The Schottky diode 5 is made of GaAs material. In this embodiment, there are a total of 8 Schottky diodes 5. The 8 Schottky diodes 5 are connected to the signal feed area 3 through the first metal blind via 8, the middle metal layer 9 and the second metal blind via 7 respectively.

[0031] In this embodiment, the unit cell lattice constants are a = 1.3 mm, w1 = 0.2, and w2 = 0.5 mm.

[0032] The working principle of this embodiment is as follows: Electromagnetic waves are input through a probe, and a honeycomb lattice topology is constructed using a metal thin film. Within this topology, structural perturbations (i.e., w1 ≠ w2) are used to break the spatial inversion symmetry, thereby opening the topological bandgap. By flip-chip inserting a Schottky diode 5 at the domain wall boundary, the electromagnetic transmission characteristics of the topological boundary states can be modulated by controlling the distribution of the bandgap dispersion modes. For example... Figure 3 The diagram shows the band structure dispersion of the topology modulator described in this embodiment under the on and off states of Schottky diode 5. When Schottky diode 5 is off, a single topology mode is supported in the 67GHz-73GHz range; when Schottky diode 5 is on, the bandgap narrows, supporting almost only single-frequency transmission. Since there are no higher-order or parasitic modes within this bandgap range, high modulation depth topology electromagnetic transmission characteristics can be controlled. Figure 4 As shown, the topological state modulator in this embodiment can achieve a high switching ratio of up to 50dB single-mode modulation in the 67GHz-73GHz range, with an insertion loss of -7dB. Furthermore, the topological state modulator also exhibits excellent topological boundary state electric field localization, such as... Figure 5 As shown, electromagnetic waves propagate only at the domain wall boundaries when no voltage excitation is applied, thus avoiding energy leakage.

[0033] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any modifications and substitutions based on the technical solutions and inventive concepts provided by the present invention should be covered within the scope of protection of the present invention.

Claims

1. A Schottky diode based on-chip topology state modulator, characterized by: The electromagnetic wave input area, the metal film topology structure transmission area, the control signal feed-in area and the electromagnetic wave output area are composed of microstrip lines, one end of the microstrip lines is connected to the metal film topology structure transmission area, and the other end is connected to the feed-in source / receiving end through a probe; the metal film topology structure transmission area is composed of a plurality of A and B primitive cells arranged in a hexagonal lattice array, the A and B primitive cells are 180° central rotationally symmetrical, the A primitive cell area and the B primitive cell area are connected in the vertical direction, and the number of primitive cell periods in the vertical direction is greater than or equal to 4, a Schottky diode is installed at the domain wall junction of the A and B primitive cells, and is used for regulating and controlling the electromagnetic transmission characteristics of the topological boundary state, the distribution period of the Schottky diode is the same as the primitive cell lattice constant, and the Schottky diode is controlled to be on or off by the voltage of the control signal feed-in area; the cathode of the Schottky diode is assembled on the topological structure at the domain wall junction, is connected to the back metal plate through a metal via hole and is grounded, the anode of the Schottky diode is assembled on a pad, is connected to the control signal feed-in area through a first metal blind hole, a middle metal layer and a second metal blind hole, and the number of the Schottky diodes is M, and M is greater than or equal to 4.

2. The Schottky diode based on-chip topology state modulator of claim 1, wherein: Each primitive cell is composed of three thin metal Y-shaped branches and three thick metal Y-shaped branches.

3. The Schottky diode based on-chip topology state modulator of claim 1, wherein: The metal film material of the metal film topology structure transmission area is Au, Ag, Cu or Al.

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