Power semiconductor device and method for manufacturing a power semiconductor device

Abstract

A power semiconductor device (100) has: a heat sink-integrated power module (20) that integrates a power module and a heat sink; a holding portion that has a box shape with a plurality of opening portions (41) formed in one face that connects an inlet and an outlet; and a structure support portion (50) that is provided inside the holding portion, receives a load in a direction from the one face toward the inside of the holding portion, and supports the one face. With a plurality of the heat sink-integrated power modules (20), a plurality of heat sink fins are inserted from the opening portions (41) to the inside of the holding portion, and an outer peripheral edge portion (1bp) of a heat sink base (1b) is supported on an adjacent region (413) adjacent to the opening portion (41) on the one face in a face-in direction of the heat sink base (1b). The structure support portion (50) is arranged at a position corresponding to each other between the heat sink bases (1b) of the adjacent heat sink-integrated power modules (20) in a width direction of the holding portion.

Description

TECHNICAL FIELD

[0001] The present application relates to a power semiconductor device equipped with a heat sink and a power module and a manufacturing method thereof. BACKGROUND

[0002] In Patent Literature 1, a heat dissipation device is described in which a plurality of module-type cooling devices having heat dissipation plates in which heat generating elements are arranged are inserted into an opening portion of a housing and are held by the housing.

[0003] Patent Literature 1: Japanese Patent No. 6448732 SUMMARY

[0004] However, in a case where a plurality of power modules and a plurality of heat sinks are fixed to one housing in the configuration of the heat dissipation device described in Patent Literature 1 above, the housing can be deflected due to the weight of the power modules and the heat sinks. In a case where the housing is deflected, a gap can be generated between the heat sinks and the housing, the air volume between the heat dissipation fins in the heat sinks can decrease, and the heat dissipation performance of the heat sinks can decrease. Also, in a case where the housing is deflected, the heat sinks can not be properly fixed to the housing. In a case where the heat sinks are not properly fixed to the housing, sufficient vibration resistance of the product cannot be obtained.

[0005] The present application has been made in view of the above circumstances, and has an object to obtain a power semiconductor device capable of suppressing deflection of a holding portion in which a plurality of power modules and heat sinks are installed.

[0006] To solve the above problem and achieve the object, the power semiconductor device according to the present application includes: a heat sink-integrated power module in which a power module and a heat sink are integrated, a plurality of heat dissipation fins of the heat sink are provided to a heat sink base, and heat generated in the power module is dissipated; a holding portion having a box shape, a flow inlet of air and a flow outlet of air of the holding portion are provided opposite to each other, a plurality of opening portions are formed in one face that connects the flow inlet and the flow outlet, and a support portion is provided inside the holding portion, receives a load in a direction from the one face toward the inside of the holding portion, and supports the one face. In the plurality of heat sink-integrated power modules, the plurality of heat dissipation fins are inserted into the inside of the holding portion from the opening portions, and in a face direction of the heat sink base, an outer peripheral portion of the heat sink base is supported on an adjacent region adjacent to the opening portions on the one face. The support portion is configured to be provided at positions corresponding to each other between the heat sink bases of the adjacent heat sink-integrated power modules in a width direction of the holding portion.

[0007] EFFECT OF THE INVENTION

[0008] According to the power semiconductor device related to the present application, it is possible to obtain an effect of suppressing flexure of a holding portion in which a plurality of power modules and a heat sink are installed. BRIEF DESCRIPTION OF DRAWINGS

[0009] Figure 1 is a plan view showing the structure of the power semiconductor device related to Embodiment 1.

[0010] Figure 2 is a first cross-sectional view showing the structure of the power semiconductor device related to Embodiment 1, and is a cross-sectional view along the line II-II of Figure 1 .

[0011] Figure 3 is a second cross-sectional view showing the structure of the power semiconductor device related to Embodiment 1, and is a cross-sectional view along the line III-III of Figure 1 .

[0012] Figure 4 is a cross-sectional view of the heat sink-integrated power module related to Embodiment 1.

[0013] Figure 5 is a cross-sectional view of the heat sink-integrated power module of the first modification of the heat sink related to Embodiment 1, in which the heat sink of the first modification is installed.

[0014] Figure 6 is a cross-sectional view of the heat sink-integrated power module of the second modification of the heat sink related to Embodiment 1, in which the heat sink of the second modification is installed.

[0015] Figure 7 is a cross-sectional view of the heat sink-integrated power module of the third modification related to Embodiment 1.

[0016] Figure 8 is a plan view showing the outer frame of the power semiconductor device related to Embodiment 1.

[0017] Figure 9 is a cross-sectional view showing the outer frame of the power semiconductor device related to Embodiment 1, and is a cross-sectional view along the line IX-IX of Figure 8 .

[0018] Figure 10 is a plan view showing the housing of the power semiconductor device related to Embodiment 1.

[0019] Figure 11 is a first plan view schematically showing one example of the flow of the manufacturing method of the power semiconductor device related to Embodiment 1.

[0020] Figure 12 is a first cross-sectional view schematically showing one example of the flow of the manufacturing method of the power semiconductor device related to Embodiment 1.

[0021] Figure 13 FIG. 2 is a second plan view schematically showing one example of a flow of the manufacturing method of the power semiconductor device according to Embodiment 1.

[0022] Figure 14 FIG. 3 is a second cross-sectional view schematically showing one example of a flow of the manufacturing method of the power semiconductor device according to Embodiment 1.

[0023] Figure 15 FIG. 4 is a third cross-sectional view schematically showing one example of a flow of the manufacturing method of the power semiconductor device according to Embodiment 1.

[0024] Figure 16 FIG. 5 is a third plan view schematically showing one example of a flow of the manufacturing method of the power semiconductor device according to Embodiment 1.

[0025] Figure 17 FIG. 6 is a fourth plan view schematically showing one example of a flow of the manufacturing method of the power semiconductor device according to Embodiment 1.

[0026] Figure 18 FIG. 7 is a fifth plan view schematically showing one example of a flow of the manufacturing method of the power semiconductor device according to Embodiment 1.

[0027] Figure 19 FIG. 8 is a flowchart showing a flow of the manufacturing method of the power semiconductor device according to Embodiment 1.

[0028] Figure 20 FIG. 9 is a first schematic view for explaining an example of a relationship in size between an opening portion of a housing of the power semiconductor device according to Embodiment 1 and a heat sink base of a heat sink-integrated power module.

[0029] Figure 21 FIG. 10 is a second schematic view for explaining an example of a relationship in size between an opening portion of a housing of the power semiconductor device according to Embodiment 1 and a heat sink base of a heat sink-integrated power module.

[0030] Figure 22 FIG. 11 is a third schematic view for explaining an example of a relationship in size between an opening portion of a housing of the power semiconductor device according to Embodiment 1 and a heat sink base of a heat sink-integrated power module.

[0031] Figure 23 FIG. 12 is a first cross-sectional view showing a manufacturing method of a power semiconductor device according to Comparative Example 1.

[0032] Figure 24FIG. 2 is a second cross-sectional view showing a manufacturing method of the power semiconductor device according to Embodiment 1.

[0033] Figure 25 FIG. 4 is a schematic view for explaining a flow of air inside a holding portion of the power semiconductor device according to Embodiment 1.

[0034] Figure 26 FIG. 5 is a schematic view for explaining a flow of air inside a holding portion of the power semiconductor device according to Comparative Example 1.

[0035] Figure 27 FIG. 7 is a first cross-sectional view showing an example of a fixing method of a structure support portion of the power semiconductor device according to Embodiment 1 to an outer frame.

[0036] Figure 28 FIG. 8 is a second cross-sectional view showing an example of a fixing method of a structure support portion of the power semiconductor device according to Embodiment 1 to an outer frame.

[0037] Figure 29 FIG. 9 is a third cross-sectional view showing an example of a fixing method of a structure support portion of the power semiconductor device according to Embodiment 1 to an outer frame.

[0038] Figure 30 FIG. 10 is a fourth cross-sectional view showing an example of a fixing method of a structure support portion of the power semiconductor device according to Embodiment 1 to an outer frame.

[0039] Figure 31 FIG. 12 is a first cross-sectional view showing an example of a fixing method of a structure support portion of the power semiconductor device according to Embodiment 1 to a housing.

[0040] Figure 32 FIG. 13 is a second cross-sectional view showing an example of a fixing method of a structure support portion of the power semiconductor device according to Embodiment 1 to a housing.

[0041] Figure 33 FIG. 15 is a flowchart showing a flow of another manufacturing method of the power semiconductor device according to Embodiment 1.

[0042] Figure 34 FIG. 17 is a first cross-sectional view showing a structure of the power semiconductor device according to Embodiment 1 in a case where a structure support portion with an elastic function is applied to the power semiconductor device.

[0043] Figure 35 FIG. 18 is a second cross-sectional view showing a structure of the power semiconductor device according to Embodiment 1 in a case where a structure support portion with an elastic function is applied to the power semiconductor device.

[0044] Figure 36is a first cross-sectional view for explaining a positional relationship between a structure support portion of a power semiconductor device, a heat sink base of a heat sink-integrated power module, and a case relating to Embodiment 1.

[0045] Figure 37 is a second cross-sectional view for explaining a relationship between a structure support portion of a power semiconductor device, a heat sink base of a heat sink-integrated power module, and a case relating to Embodiment 1.

[0046] Figure 38 is a third cross-sectional view for explaining a relationship between a structure support portion of a power semiconductor device, a heat sink base of a heat sink-integrated power module, and a case relating to Embodiment 1.

[0047] Figure 39 is a first plan view for explaining a shape and arrangement of a structure support portion of a power semiconductor device relating to Embodiment 1.

[0048] Figure 40 is a second plan view for explaining a shape and arrangement of a structure support portion of a power semiconductor device relating to Embodiment 1.

[0049] Figure 41 is a third plan view for explaining a shape and arrangement of a structure support portion of a power semiconductor device relating to Embodiment 1.

[0050] Figure 42 is a fourth plan view for explaining a shape and arrangement of a structure support portion of a power semiconductor device relating to Embodiment 1.

[0051] Figure 43 is a cross-sectional view showing a structure of a power semiconductor device relating to Embodiment 2.

[0052] Figure 44 is a cross-sectional view showing a structure of a power semiconductor device relating to Embodiment 2.

[0053] Figure 45 is a cross-sectional view showing a structure of a heat sink-integrated power module relating to Embodiment 3.

[0054] Figure 46 is a cross-sectional view showing a structure of a power semiconductor device relating to Embodiment 3. DETAILED DESCRIPTION

[0055] Hereinafter, a power semiconductor device and a manufacturing method of a power semiconductor device relating to an embodiment will be described in detail based on the drawings.

[0056] Embodiment 1

[0057] Figure 1is a plan view showing the structure of the power semiconductor device 100 to which Embodiment 1 is applied. Figure 2 is a first cross-sectional view showing the structure of the power semiconductor device 100 to which Embodiment 1 is applied, and is a cross-sectional view along the II-II line of Figure 1 . Figure 3 is a second cross-sectional view showing the structure of the power semiconductor device 100 to which Embodiment 1 is applied, and is a cross-sectional view along the III-III line of Figure 1 . In addition, with regard to the cross-sectional views, a part of the hatching is omitted for the convenience of observation.

[0058] In Embodiment 1, the left-right direction in Figures 1 to 3 is set as the left-right direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. The left-right direction corresponds to the X direction in Figures 1 to 3 , and corresponds to the width direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. In addition, the depth direction of the paper in Figure 2 and Figure 3 is set as the depth direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. The depth direction corresponds to the Y direction in Figure 1 , and corresponds to the depth direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. In addition, the depth direction can also be referred to as the advancing direction of the air current 200 from the air supply system not shown which is supplied to the power semiconductor device 100, that is, the air supply direction or the air inflow direction of the power semiconductor device 100. In addition, the depth direction can also be referred to as the advancing direction of the air current 200 inside the holding part 60. In addition, the up-down direction in Figures 1 to 3 and Figure 2 is set as the up-down direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. The up-down direction corresponds to the Z direction in Figure 3 , and corresponds to the height direction of the power semiconductor device 100 and the structural part of the power semiconductor device 100. Figure 1 Figures 1 to 3 In addition, the proximal side of the depth direction of the paper of and

[0059] and the lower side of Figure 2 are set as the front side of the power semiconductor device 100 and the heat sink-integrated power module 20. The distal side of the depth direction of the paper of Figure 3 and Figure 1 and the upper side of Figure 2 are set as the back side of the power semiconductor device 100 and the heat sink-integrated power module 20. Figure 3 Figure 1 ​The upper side is set as the rear side of the power semiconductor device 100 and the integrated power module 20 with heat sink. In addition, the expressions "left and right", "up and down", "front" and "back" are for convenience and do not mean the actual "left and right", "up and down", "front" and "back", and these directions can also be reversed.

[0060] In the power semiconductor device 100, multiple integrated heat sink power modules 20 are mounted on the holding portion 60. The power semiconductor device 100 includes a structural support portion 50, a holding portion 60, and multiple integrated heat sink power modules 20. Figure 1 In this example, as an embodiment 1, a power semiconductor device 100 is shown that is equipped with six power modules 20 integrated with heat sinks, arranged in two columns and three rows.

[0061] The holding part 60 houses and holds a portion of a plurality of integrated heat sink power modules 20 within the power semiconductor device 100. That is, the plurality of integrated heat sink power modules 20 are held by the holding part 60 with a portion of them housed within it. The holding part 60 is composed of a housing 40 and an outer frame 30.

[0062] At once Figure 1 In the power semiconductor device 100 shown, heat sink integrated power modules 20a, 20b, 20c, 20d, 20e, and 20f, which are integrated heat sink power modules 20, are mounted on the holding portion 60. Furthermore, the number of integrated heat sink power modules 20 mounted in the power semiconductor device 100 is not limited to six. For example, in the left-right direction, two or more integrated heat sink power modules 20 may be mounted on the holding portion 60. In this manner, the effects of the power semiconductor device 100 described later are also achieved.

[0063] Inside the holding section 60, the airflow 200 supplied from the air supply system flows from the front side to the rear side. Alternatively, the airflow 200 can flow from the rear side to the front side.

[0064] The integrated heat sink power module 20 is a power semiconductor module mounted on the power semiconductor device 100, and is a resin-molded power module. Figure 4 This is a cross-sectional view of the heat sink integrated power module 20 according to Embodiment 1. The heat sink integrated power module 20 according to Embodiment 1 includes a heat sink 1, a fin base 2, an insulating sheet 3, wiring wires 4, a semiconductor element 5, solder 6, a metal conductor 7, a control terminal 8, an encapsulating resin 9, and a main terminal 10.

[0065] In addition, the heat sink 1 has a heat sink base 1b and a plurality of heat sink fins 1a. In addition, the power module 11 according to Embodiment 1 is configured of an insulating sheet 3, a wiring conductor 4, a semiconductor element 5, a solder 6, a metal conductor 7, a control terminal 8, a sealing resin 9, and a main terminal 10. Thus, the heat sink-integrated power module 20 according to Embodiment 1 is configured by joining the heat sink 1 and the power module 11 via the fin base 2. That is, the heat sink-integrated power module 20 is configured by integrating the power module 11 and the heat sink 1, the plurality of heat sink fins 1a of which are provided to the heat sink base 1b, and dissipating heat generated by the power module 11.

[0066] The heat sink-integrated power module 20 has the heat sink 1 connected to the lower surface side of the power module 11, and achieves an improvement in heat dissipation of heat generated in the semiconductor element 5 of the power module 11. That is, the heat sink-integrated power module 20 achieves an improvement in heat dissipation of heat generated in the power module 11 by dissipating heat generated at the semiconductor element 5 of the power module 11 from the heat sink 1. Also, the heat sink-integrated power module 20 is a heat sink grease-free power module that does not use heat conductive grease between the power module 11 and the heat sink 1. Thus, the heat sink-integrated power module 20 further improves heat dissipation characteristics of heat generated in the power module 11 compared to a case where heat conductive grease is used between the power module 11 and the heat sink 1, and has higher heat dissipation performance.

[0067] The heat sink 1 is a rivet-processed heat sink that integrates the heat sink fins 1a and the heat sink base 1b by "rivet processing".

[0068] The heat sink fins 1a are thin plate-shaped heat dissipation members having a rectangular shape. The heat sink fins 1a are configured of a metal material having relatively high thermal conductivity in a manner that enables heat dissipation of heat generated at the semiconductor element 5 of the power module 11. In one example, the heat sink fins 1a are configured of a metal material such as aluminum and aluminum alloy that is difficult to corrode. By using a rolled material of the metal material such as aluminum described above for the heat sink fins 1a, it is possible to achieve both processability of the heat sink fins 1a and heat dissipation properties of heat generated at the semiconductor element 5.

[0069] The plurality of heat sink fins 1a are each fixed to the heat sink base 1b by being inserted into a not-shown fin insertion groove formed in one face side of the heat sink base 1b and being riveted. The heat sink fins 1a are arranged in a manner that the heat sink base 1b is sandwiched by the fin base 2.

[0070] The heat sink base 1b is a flat plate-shaped member having a rectangular shape in the in-plane direction thereof, and is a member that fixes the plurality of heat sink fins 1a to become a base of the heat sink 1. The heat sink base 1b is composed of a metal material having relatively high thermal conductivity in a manner that enables efficient heat conduction of heat generated at the semiconductor element 5 of the power module 11 to the heat sink fins 1a. In one example, the heat sink base 1b is composed of a metal material such as aluminum and aluminum alloy that is difficult to corrode. The heat sink base 1b is manufactured by a machining method such as cutting, die casting, forging, and extrusion.

[0071] The fin base 2 is a flat plate-shaped member having a rectangular shape smaller than that of the heat sink base 1b, and is a connecting member that connects the power module 11 and the heat sink 1. The fin base 2 is composed of a metal material having relatively high thermal conductivity in a manner that enables efficient heat conduction of heat generated at the semiconductor element 5 of the power module 11 from the power module 11 to the heat sink 1. In one example, the fin base 2 is composed of a metal material such as aluminum and aluminum alloy that is difficult to corrode. The fin base 2 is manufactured by a machining method such as cutting, die casting, forging, and extrusion.

[0072] Further, the material of each of the heat sink fins 1a, the heat sink base 1b, and the fin base 2 is not limited to the above-described aluminum-based material, and can be another material. That is, the combination of the materials among the heat sink fins 1a, the heat sink base 1b, and the fin base 2 can be a combination of materials different from the above-described combination. For example, from the viewpoint of heat dissipation capacity, by providing the heat sink fins 1a as plate members having a larger thermal conductivity than aluminum-based materials, the heat dissipation capacity of the heat sink fins 1a is further improved compared to the case where the heat sink fins 1a are plate members composed of aluminum-based materials.

[0073] In the case of the heat sink 1 being a rivet-processed heat sink in which the heat sink fins 1a and the heat sink base 1b are integrated by rivet processing, there is no machining limitation of the aspect ratio as in the case of manufacturing the heat sink by die casting and extrusion processing, and thus the heat sink fins 1a can be freely designed, and the heat dissipation capacity of the heat sink 1 can be improved. However, the heat sink 1 is not limited to a rivet-processed heat sink, and a heat sink manufactured by another machining method can be used.

[0074] Figure 5 is a cross-sectional view of a heat sink-integrated power module of a first modification of the heat sink 12 according to the first embodiment. In Figure 5 , the same reference numerals are attached to the same structures as Figure 4 . In the case of the heat sink 12 of the first modification, the heat sink fins 1a and the heat sink base 1b are integrally manufactured by extrusion processing.

[0075] Figure 6 is a sectional view of a second modification of the heat sink-integrated power module of Embodiment 1 in which the heat sink 13 of the second modification is mounted. In Figure 6 , the same reference numerals are assigned to the same structures as those of Figure 4 . In the case of the heat sink 13 of the second modification, the heat sink fins 1a and the heat sink base 1b are integrally produced by die casting.

[0076] In addition, in the heat sink-integrated power module 20, a heat sink produced by cutting or forging can also be used.

[0077] Figure 7 is a sectional view of a third modification of the heat sink-integrated power module of Embodiment 1. In the case of the heat sink-integrated power module of the third modification, the power module 11 and the heat sink 1 are connected by a joining material 15 such as solder or an adhesive 16.

[0078] In the configuration shown in Figures 5 to 7 , the effect of the heat sink grease-free power module capable of achieving high heat dissipation performance as described above is also obtained.

[0079] The insulating sheet 3 insulates the structure portion to be encapsulated by the encapsulating resin 9 from the heat sink base 1b and causes the heat generated by the semiconductor element 5 to be dissipated to the heat sink base 1b. The insulating sheet 3 has a heat dissipation property greater than or equal to that of the encapsulating resin 9.

[0080] The wiring conductor 4 electrically connects the semiconductor elements 5 to each other and also electrically connects the semiconductor elements 5 to the main terminal 10.

[0081] The semiconductor element 5 is a semiconductor element for power control. One example of the semiconductor element 5 is a rectifier diode, a power transistor, a thyristor, or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor element 5 exemplifies an element formed of silicon (Si) or an element formed of a wide band gap semiconductor having a larger band gap than silicon. One example of the wide band gap semiconductor is silicon carbide (SiC), a gallium nitride-based material, or diamond. The semiconductor element 5 using the wide band gap semiconductor can be miniaturized because the semiconductor element 5 has a high allowable current density and a low power loss.

[0082] The solder 6 is a joining material that joins the semiconductor element 5 to the metal conductor 7. Furthermore, the joining material that joins the semiconductor element 5 to the metal conductor 7 is not limited to the solder 6.

[0083] The metal conductor 7 is a substrate on which the semiconductor element 5 is mounted and causes the heat generated by the semiconductor element 5 to be dissipated to the insulating sheet 3.

[0084] The control terminals 8 and the main terminals 10 are connected to the semiconductor elements 5, and supply electric power to the semiconductor elements 5 or transmit signals between the semiconductor elements 5 and external devices.

[0085] The packaging resin 9 forms a frame of the power module 11. The packaging resin 9 is formed of a thermosetting resin such as an epoxy resin, and insulates the components arranged inside. The packaging resin 9 is, for example, transfer molded. However, the molding method of the packaging resin 9 is not limited to transfer molding.

[0086] Next, a manufacturing method of the heat sink-integrated power module 20 configured as described above will be described.

[0087] First, the semiconductor elements 5 are die-bonded to the metal conductors 7 using the solder 6. Next, the semiconductor elements 5 are wire-bonded and electrically connected to other semiconductor elements 5 by the wiring leads 4. In addition, some of the semiconductor elements 5 are wire-bonded and electrically connected to the control terminals 8 or the main terminals 10 by the wiring leads 4. Next, the insulating sheet 3 is temporarily attached to one face of the fin base 2.

[0088] Then, the fin base 2 to which the insulating sheet 3 is temporarily attached on one face, the metal conductors 7 on which the die-bonding of the semiconductor elements 5 and the wire-bonding of the wiring leads 4 are completed as described above, the control terminals 8, and the main terminals 10 are integrated by using the packaging resin 9, thereby manufacturing an assembly in which the power module 11 and the fin base 2 are assembled.

[0089] Further, the fin base protrusion 2u provided on the other face side of the fin base 2 and the heat sink base protrusion 1bu provided on one face of the heat sink base 1b are fitted and fixed by press working, thereby integrating the assembly and the heat sink base 1b. Thus, the heat sink-integrated power module 20 shown in FIG. 1 is formed. Figure 1

[0090] In the manufacturing method of the heat sink-integrated power module 20 described above, the fin base 2 and the heat sink base 1b are integrated by press working, and thus, there is a possibility that damage to the semiconductor elements 5, cracking of the semiconductor elements 5, changes in characteristics of the semiconductor elements 5, cracking of the packaging resin 9, a decrease in withstand voltage of the insulating sheet 3, and peeling between the components of the heat sink-integrated power module 20, and the like occur. Therefore, it is preferable that the press load when the assembly and the heat sink base 1b are integrated be as low a load as possible.

[0091] Figure 8 is a plan view showing the outer frame 30 of the power semiconductor device 100 according to Embodiment 1. Figure 9 is a sectional view showing the outer frame 30 of the power semiconductor device 100 according to Embodiment 1, and is a sectional view taken along the line​Figure 8 cross-sectional view of the IX-IX line in FIG. 1.

[0092] The outer frame 30 supports the case 40 in which the heat sink-integrated power module 20 is installed, and also forms a wind path of the air flow 200 delivered from the air supply system. The outer frame 30 has a box shape of a rectangular parallelepiped shape, which is formed so that two side surface portions 32 stand vertically upward from both end portions in the left-right direction of a bottom surface portion 31 of the outer frame 30, and the upper side, the front side, and the back side are open. That is, the outer frame 30 has a cross-sectional shape of a U shape in cross section in the left-right direction, as shown in FIGS. 1, 2, and 3, and has a configuration in which the faces other than the upper surface side, the front side, and the back side of the case 40 are closed. Further, the outer frame 30 does not need to be a shape in which the faces other than the upper surface side, the front side, and the back side must be closed, and can be formed with an opening portion as needed. Figure 2 Figure 3 Figure 9 As shown in FIGS. 1, 2, and 3, the outer frame 30 has a cross-sectional shape of a U shape in cross section in the left-right direction, and has a configuration in which the faces other than the upper surface side, the front side, and the back side of the case 40 are closed. Further, the outer frame 30 does not need to be a shape in which the faces other than the upper surface side, the front side, and the back side must be closed, and can be formed with an opening portion as needed.

[0093] Further, the "U shape" is not only a shape without a corner, but also includes a shape with a corner, as shown in FIGS. 1, 2, and 3. That is, the "U shape" includes a shape in which a curved portion is continuously constituted by a curved line, and a shape in which a curved portion is constituted by a bent portion. Figure 2 Figure 3 Figure 9 As shown in FIGS. 1, 2, and 3, the outer frame 30 has a cross-sectional shape of a U shape in cross section in the left-right direction, and has a configuration in which the faces other than the upper surface side, the front side, and the back side of the case 40 are closed. Further, the outer frame 30 does not need to be a shape in which the faces other than the upper surface side, the front side, and the back side must be closed, and can be formed with an opening portion as needed.

[0094] In the outer frame 30, the internal space surrounded by the bottom surface portion 31 and the two side surface portions 32 constitutes a wind path of the wind delivered from the air supply system. The open front side of the outer frame 30 is provided as an inflow port of the wind delivered from the air supply system. Further, the open back side of the outer frame 30 is provided as an outflow port of the wind flowing in the internal space of the outer frame 30 from the inflow port. The inflow port of the wind in the outer frame 30 can also be referred to as the inflow port of the wind in the holding portion 60. The outflow port of the wind in the outer frame 30 can also be referred to as the outflow port of the wind in the holding portion 60.

[0095] The outer frame 30 supports the dead weights of the case 40, the heat sink-integrated power module 20, and each component connected to the heat sink-integrated power module 20, and thus is constituted of a material having rigidity capable of supporting the above-described structural portions. Further, from the viewpoint of the product weight of the power semiconductor device 100, the outer frame 30 is preferably as thin and light as possible within a range having rigidity capable of supporting the above-described structural portions. For example, a plated steel sheet can simultaneously achieve rigidity capable of supporting the above-described structural portions, thinning, and lightening, and is a preferable material used as the outer frame 30. Further, the outer frame 30 can also use a material other than a plated steel sheet.

[0096] The case 40 is a mounting plate of the heat sink-integrated power module 20 in which the heat sink-integrated power module 20 is installed and mounted. The case 40 is​​​​Figure 2 and Figure 3 is placed on the 2 side surface portions 32 of the outer frame 30. The in-plane direction of the housing 40, the in-plane direction of the bottom surface portion 31 of the outer frame 30, and the in-plane direction of the heat sink base 1b of the heat sink-integrated power module 20 are set to be parallel.

[0097] Figure 10 is a plan view showing the housing 40 of the power semiconductor device 100 according to Embodiment 1. As shown in Figure 10 , the housing 40 has a plate shape and is formed with a plurality of opening portions 41 into which a part of the heat sink-integrated power module 20 is inserted. The housing 40 is formed with a plurality of opening portions 41 corresponding to the size of the heat sink fins 1a in accordance with the number of heat sink-integrated power modules 20 to be mounted. In the housing 40 shown in Figure 10 , 6 opening portions 41 are formed in order to mount 6 heat sink-integrated power modules 20.

[0098] The opening portion 41 has a rectangular shape in the in-plane direction of the housing 40. In addition, the shape of the opening portion 41 is not limited to a rectangular shape, but can be formed to match the shape of the heat sink-integrated power module 20. The opening portion 41 has a size in the in-plane direction of the housing 40 into which the heat sink fins 1a of the heat sink-integrated power module 20 can be inserted as a whole, and has a size into which the outer peripheral portion 1bp of the heat sink base 1b cannot be inserted. That is, the opening portion 41 has a size and a shape in the in-plane direction of the housing 40 into which the heat sink fins 1a of the heat sink-integrated power module 20 can be inserted as a whole, but into which the heat sink base 1b cannot be inserted. The relationship between the size of the opening portion 41, the heat sink-integrated power module 20, the heat sink base 1b, and the heat sink fins 1a will be described later.

[0099] The housing 40 supports the weight of the heat sink-integrated power module 20 and each component connected to the heat sink-integrated power module 20, and thus is made of a material having rigidity capable of supporting the above-described structural portions. In addition, from the viewpoint of the product weight of the power semiconductor device 100, the housing 40 is preferably as thin and light as possible within a range having rigidity capable of supporting the above-described structural portions. For example, a plated steel sheet can simultaneously achieve rigidity capable of supporting the above-described structural portions, thinning, and lightening, and is a preferable material used as the housing 40. In addition, a material other than the plated steel sheet can also be used for the housing 40.

[0100] As shown in Figure 2As shown, the heat dissipation fins 1a of the heat sink 1 of the heat sink integrated power module 20 are inserted from the outside of the holding portion 60 into the plurality of opening portions 41. In the case of the housing 40, in a state in which the heat dissipation fins 1a are housed inside the holding portion 60, the outer peripheral edge portion 1bp of the heat sink base 1b is placed on the adjacent region 413 adjacent to the opening portion 41. Also, the housing 40 is supported by the end portions of the two side surface portions 32, which are the free ends of the U-shaped outer frame 30, to constitute one face of the holding portion 60.

[0101] Thus, the housing 40 holds the heat sink integrated power module 20 by holding the heat sink base 1b in the adjacent region 413. That is, in the case of the plurality of heat sink integrated power modules 20, the plurality of heat dissipation fins 1a are inserted from the opening portions 41 into the inside of the holding portion 60, and the outer peripheral edge portion 1bp of the heat sink base 1b is supported on the adjacent region 413 adjacent to the opening portion 41 at the housing 40 constituting one face of the holding portion 60 in the facewise direction of the heat sink base 1b.

[0102] Therefore, the holding portion 60 constituted by the outer frame 30 and the housing 40 having the above-described structure has a box shape, and the inlet of the flow of air and the outlet of the flow of air are disposed opposite each other, and the plurality of opening portions 41 are formed in the housing 40 constituting one face connecting the inlet and the outlet.

[0103] The structure support portion 50 is disposed inside the holding portion 60, receives a load in a direction from the housing 40 constituting one face of the holding portion 60 toward the inside of the holding portion 60, and supports the housing 40 and the heat sink integrated power module 20 mounted on the housing 40. The structure support portion 50 is disposed at a position corresponding to the heat sink base 1b of the adjacent heat sink integrated power module 20 in the width direction of the holding portion 60. The width direction of the holding portion 60 is a direction orthogonal to a direction from the inlet of the holding portion 60 toward the outlet of the holding portion 60, and is the left-right direction. The direction from the inlet of the holding portion 60 toward the outlet of the holding portion 60 corresponds to the Y direction. The structure support portion 50 continuously extends in the direction from the inlet toward the outlet in a region from the inlet of the holding portion 60 to the outlet of the holding portion 60. The structure support portion 50 is fixed to the outer frame 30, and the upper surface thereof is in contact with the housing 40. The cross section of the structure support portion 50 perpendicular to the length direction is a rectangular rod shape. Furthermore, the shape of the structure support portion 50 is not limited as long as the function thereof can be exerted.

[0104] Next, a manufacturing method of the power semiconductor device 100 constituted as described above will be described. Figures 11 to 18 is a diagram schematically showing one example of a flow of a manufacturing method of the power semiconductor device 100 according to Embodiment 1. Figure 19is a flowchart showing the flow of the manufacturing method of the power semiconductor device 100 according to Embodiment 1.

[0105] First, in step S110, the structure support portion 50 is attached and fixed to the outer frame 30. Figure 11 is a first plan view schematically showing one example of the flow of the manufacturing method of the power semiconductor device 100 according to Embodiment 1. Figure 12 is a first cross-sectional view schematically showing one example of the flow of the manufacturing method of the power semiconductor device 100 according to Embodiment 1. Figure 12 is a cross-sectional view along the XII-XII line in Figure 11 .

[0106] Specifically, as shown in Figure 11 and Figure 12 , the structure support portion 50 is attached and fixed to the inner surface 31a of the bottom surface portion 31 of the outer frame 30. The structure support portion 50 is attached to the central portion in the left-right direction of the inner surface 31a of the bottom surface portion 31 in a state where the cross section perpendicular to the length direction is perpendicular to the inner surface 31a of the bottom surface portion 31 of the outer frame 30, and the length direction is parallel to the two side surface portions 32 of the outer frame 30. The fixing method of the structure support portion 50 with respect to the outer frame 30 is exemplified by screw fastening. In addition, the fixing method of the structure support portion 50 with respect to the outer frame 30 is not limited to screw fastening. For example, the structure support portion 50 can be fixed to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by welding.

[0107] Next, in step S120, the housing 40 is fixed to the outer frame 30 by screw fastening using the housing fixing screw 71. Figure 13 is a second plan view schematically showing one example of the flow of the manufacturing method of the power semiconductor device 100 according to Embodiment 1. Figure 14 is a second cross-sectional view schematically showing one example of the flow of the manufacturing method of the power semiconductor device 100 according to Embodiment 1. Figure 15 is a third cross-sectional view schematically showing one example of the flow of the manufacturing method of the power semiconductor device 100 according to Embodiment 1. Figure 16 is a third plan view schematically showing one example of the flow of the manufacturing method of the power semiconductor device 100 according to Embodiment 1. Figure 17 is a fourth plan view schematically showing one example of the flow of the manufacturing method of the power semiconductor device 100 according to Embodiment 1. Figure 14 is a cross-sectional view along the XIIII-XIIII line in Figure 13 . Figure 15 is a cross-sectional view along the XV-XV line in Figure 13 . is a cross-sectional view along the XV-XV line in Figure 13 .

[0108] Specifically, as shown in Figures 13 to 15 the case 40 is placed on the outer frame 30. At this time, the left-right direction end portion region 415 of the case 40 is placed on the side surface portion 32 of the outer frame 30. Also, the left-right direction central region 414 of the case 40 is placed on the structure support portion 50. In the case 40, the region between the short side 411 of the opening portion in the left-right direction and the long side 416 of the case is set as the end portion region 415. Also, in the case 40, the region corresponding to the position between the short sides 411 of the adjacent opening portions in the left-right direction is set as the central region 414.

[0109] Then, as shown in Figure 16 the case 40 is fixed to the outer frame 30 in the end portion region 415 by screw fastening from above the end portion region 415 of the case 40 at both ends in the left-right direction by the case fixing screw 71. Then, as shown in Figure 17 the case 40 is fixed to the structure support portion 50 in the central region 414 by screw fastening from above the central region 414 of the case 40 at the central portion in the left-right direction by the case fixing screw 71.

[0110] In the outer frame 30, a screw hole not shown is formed in advance at the position where the case fixing screw 71 is screwed in. The position in the outer frame 30 where the case fixing screw 71 is screwed in is the position of the upper surface of the two side surface portions 32 of the outer frame 30. Also, in the case 40, a screw hole not shown or a through hole not shown is formed in advance at the position where the case fixing screw 71 is screwed in. The position in the case 40 where the case fixing screw 71 is screwed in is the position in the end portion region 415 corresponding to the screw hole of the outer frame 30. Also, in the structure support portion 50, a screw hole not shown is formed in advance at the position where the case fixing screw 71 is screwed in. The position in the structure support portion 50 where the case fixing screw 71 is screwed in is the position in the upper surface of the structure support portion 50 fixed to the outer frame 30 corresponding to the screw hole or the through hole of the case 40.

[0111] The case 40 is fixed to the outer frame 30 in the end portion region 415 by screw fastening, and the case 40 is fixed to the structure support portion 50 in the central region 414 by screw fastening, so the case 40 is more firmly fixed with respect to the other structure portions in the holding portion 60, and the vibration resistance of the holding portion 60 and the power semiconductor device 100 becomes better.

[0112] Next, in step S130, the integrated heat sink power module 20 is mounted on the housing 40. Specifically, the heat dissipation fins 1a of the integrated heat sink power module 20 are inserted from above the opening 41 of the housing 40, and the integrated heat sink power module 20 is mounted on the housing 40.

[0113] Here, as Figure 2 As shown, the integrated heat sink power module 20 has the heat sink fins 1a housed inside the holding portion 60, and the outer peripheral portion 1bp of the heat sink base 1b is placed in the adjacent region 413 adjacent to the opening 41. Thus, by supporting the heat sink base 1b at the adjacent region 413 of the housing 40, the integrated heat sink power module 20 is held by the housing 40. Furthermore, the integrated heat sink power module 20 is mounted on the housing 40 such that the center of the opening 41 of the housing 40 and the center of the heat sink base 1b are positioned at the same location in the in-plane direction of the housing 40. Additionally, the integrated heat sink power module 20 is mounted on the housing 40 such that the depth direction of the plurality of heat sink fins 1a in the heat sink 1 is parallel to the short side 411 of the opening, and the direction in which the plurality of heat sink fins 1a are arranged in the heat sink 1, i.e., the arrangement direction of the heat sink fins 1a, is parallel to the long side 412 of the opening.

[0114] Next, in step S140, the integrated heat sink power module 20 is fixed to the housing 40 by screws. Figure 18 The fifth top view is an example of a process of manufacturing a power semiconductor device 100 according to Embodiment 1.

[0115] Specifically, such as Figure 18 As shown, the power module is secured to the housing 40 by screws 72 from above the four corners of the heat sink base 1b in the in-plane direction of the integrated heat sink power module 20. Thus, the heat sink base 1b is fixed to the housing 40 by screws at the corners of the integrated heat sink power module 20.

[0116] In the housing 40, at the positions where the power module fixing screws 72 are screwed in, screw holes not shown are formed in advance. The positions in the housing 40 where the power module fixing screws 72 are screwed in are the positions on the opening portion 41 side in the end portion region 415 and the positions on the opening portion 41 side in the central region 414. In the heat sink base 1b, at the positions where the power module fixing screws 72 are screwed in, screw holes not shown or through holes not shown are formed in advance. The positions in the heat sink base 1b where the power module fixing screws 72 are screwed in are the positions corresponding to the screw holes of the end portion region 415 and the central region 414 of the housing 40. Thus, as shown in FIG. 1, the heat sink-integrated power module 20 to which Embodiment 1 relates is produced. Figure 18

[0117] Next, the relationship between the size of the opening portion 41 formed in the housing 40 and the heat sink base 1b of the heat sink-integrated power module 20 will be described. Figure 20 is a first diagram for describing an example of the relationship between the size of the opening portion 41 of the housing 40 of the power semiconductor device 100 and the heat sink base 1b of the heat sink-integrated power module 20 to which Embodiment 1 relates. In Figure 20 , in the plan view of the housing 40, the position of the heat sink base 1b of the heat sink-integrated power module 20 mounted on the housing 40 is shown by a broken line.

[0118] In the case of the power semiconductor device 100, in order to be able to fix the heat sink-integrated power module 20 to the housing 40 by screwing the heat sink base 1b to the housing 40, as shown in Figure 20 , in the in-plane direction of the housing 40, the following conditions shown by Equations (1) to (4) are satisfied. The opening portion in the following Equations (1) to (4) is the opening portion 41 of the housing 40.

[0119] the length of the first short side 411a of the opening portion < the length of the first short side 1bs1 of the heat sink base

[0120] (1)

[0121] the length of the second short side 411b of the opening portion < the length of the second short side 1bs2 of the heat sink base

[0122] (2)

[0123] the length of the first long side 412a of the opening portion < the length of the first long side 1bl1 of the heat sink base

[0124] (3)

[0125] the length of the second long side 412b of the opening portion < the length of the second long side 1bl2 of the heat sink base

[0126] ​(4)

[0127] By satisfying the conditions shown in the above formulae (1) to (4), it is possible to screw-fasten the heat sink base 1b to the case 40 by the power module fixing screw 72 in the four regions between the corners of the heat sink base 1b in the in-plane direction of the heat sink base 1b and the corners of the opening portion 41, as shown in Figure 20

[0128] Figure 21 is a second diagram for explaining an example of the relationship between the size of the opening portion 41 of the case 40 of the power semiconductor device 100 and the heat sink base 1b of the heat sink-integrated power module 20 according to Embodiment 1. In Figure 21 , the position of the heat sink base 1b of the heat sink-integrated power module 20 mounted on the case 40 is shown by a broken line in the plan view of the case 40. In the case of the power semiconductor device 100, when the conditions shown in the following formulae (5) and (6) are satisfied in the in-plane direction of the case 40, it is also possible to fix the heat sink-integrated power module 20 to the case 40 by screw-fastening the heat sink base 1b to the case 40.

[0129] the length of the first long side 412a of the opening portion < the length of the first long side 1bl1 of the heat sink base ··· (5)

[0130] the length of the second long side 412b of the opening portion < the length of the second long side 1bl2 of the heat sink base ··· (6)

[0131] By satisfying the conditions shown in the above formulae (5) and (6), it is possible to screw-fasten the heat sink base 1b to the case 40 by the power module fixing screw 72 in the peripheral regions of the four corners of the heat sink base 1b in the in-plane direction of the heat sink base 1b. In this case, as shown in Figure 21 , it is possible to screw-fasten the power module fixing screw 72 in the two regions between the first short side 411a of the opening portion and the first short side 1bs1 of the heat sink base and the two regions between the second short side 411b of the opening portion and the second short side 1bs2 of the heat sink base in the peripheral regions of the four corners of the heat sink base 1b.

[0132] Figure 22 is a third diagram for explaining an example of the relationship between the size of the opening portion 41 of the case 40 of the power semiconductor device 100 and the heat sink base 1b of the heat sink-integrated power module 20 according to Embodiment 1. In Figure 22 ​In the plan view of the housing 40, the position of the heat sink base 1b of the heat sink-integrated power module 20 mounted on the housing 40 is shown by a broken line. In the case of the power semiconductor device 100, when the conditions shown in the following equations (7) and (8) are satisfied in the in-plane direction of the housing 40, the heat sink-integrated power module 20 can be fixed to the housing 40 by screwing the heat sink base 1b to the housing 40.

[0133] Length of the first short side 411a of the opening portion < Length of the first short side 1bs1 of the heat sink base ··· (7)

[0134] Length of the first long side 412a of the opening portion < Length of the first long side 1bl1 of the heat sink base ··· (8)

[0135] By satisfying the conditions shown in the above equations (7) and (8), the heat sink base 1b can be screwed to the housing 40 by the power module fixing screw 72 in the peripheral regions of the three corners of the heat sink base 1b in the in-plane direction of the heat sink base 1b. In this case, as shown in Figure 22 the power module fixing screw 72 can be screwed in the two regions between the corners of the heat sink base 1b in the peripheral regions of the three corners of the heat sink base 1b and the corners of the opening portion 41 and the one region between the second short side 411b of the opening portion and the second short side 1bs2 of the heat sink base.

[0136] In the case of the power semiconductor device 100, if it is considered that there is a possibility that a manufacturing warpage occurs in the heat sink base 1b of the heat sink-integrated power module 20 and the housing 40 and that the load of the plurality of components connected at the heat sink-integrated power module 20 is received by the housing, the vibration resistance of the power semiconductor device 100 is improved in the order of the screwing structure examples shown in Figure 22 Figure 21 Figure 20 the screwing structure examples shown in

[0137] The heat sink fins 1a of the heat sink-integrated power module 20 are inserted into the inside of the housing 40, and therefore, in the depth direction, that is, the wind inflow direction, the condition shown in the following equation (9) is satisfied.

[0138] Length of the heat sink fins 1a in the depth direction < Length of the short side 411 of the opening portion ··· (9)

[0139] ​​Further, the heat dissipation fins 1a of the heat sink integrated power module 20 are inserted into the inside of the case 40, and therefore, in the left-right direction, that is, the width direction of the power semiconductor device 100, the condition shown in the following expression (10) is satisfied.

[0140] Distance from the heat dissipation fin 1a of the left end portion to the heat dissipation fin 1a of the right end portion < Length of the long side 412 of the opening portion... (10)

[0141] Next, the effects of the configuration of the power semiconductor device 100 described above will be described. Figure 23 is a first cross-sectional view showing a manufacturing method of a power semiconductor device of a comparative example to which Embodiment 1 pertains. Figure 24 is a second cross-sectional view showing a manufacturing method of a power semiconductor device of a comparative example to which Embodiment 1 pertains. In Figure 23 and Figure 24 Cross sections at positions where the power module fixing screws 72 are screw-fastened are shown in Figure 23 and Figure 24 The same structures as those of the power semiconductor device 100 to which Embodiment 1 pertains are denoted by the same reference numerals.

[0142] In the case of the power semiconductor device of the comparative example, screw-fastening of the power module fixing screws 72 is performed in the direction indicated by the arrow in Figure 23 In this case, if the screw-fastening of the power module fixing screws 72 is performed at the central region 414 of the case 40, the load of the screw-fastening of the power module fixing screws 72 is applied to the case 40 via the heat sink base 1b. Therefore, when the load applied by the screw-fastening of the power module fixing screws 72 is applied in the case where the holding portion 60 is not provided with the configuration support portion 50, the case 40 sometimes flexes as shown in Figure 24

[0143] Further, even in the case where the heat sink integrated power module 20 can be fixed to the case 40 in the state where the case 40 is flexed, in the case of a product in which other components are mounted to the heat sink integrated power module 20, the vibration resistance is deteriorated, and it is possible that the screw-fastening portions of the case fixing screws 71 and the power module fixing screws 72 and the structures around the screw-fastening portions and the structures around the screw-fastening portions are broken due to the repeated fatigue caused by the vibration applied to the power semiconductor device of the comparative example. ​

[0144] To solve the above problems, it is necessary to increase the rigidity of the case 40, specifically, to make the thickness of the case 40 thicker. In the case where the thickness of the case 40 is made thicker, the weight of the power semiconductor device increases, which hinders the weight reduction of the power semiconductor device.

[0145] On the other hand, in the case of the power semiconductor device 100 according to Embodiment 1, in the region of the holding portion 60 corresponding to the central region 414 of the case 40, the structure support portion 50 is provided. That is, in the case of the power semiconductor device 100, the structure support portion 50 is attached to and fixed to the inner surface 31a of the bottom surface portion 31 of the outer frame 30. Thus, in the case of the power semiconductor device 100, the load at the time when the heat sink-integrated power module 20 is fixed to the case 40 by screw fastening by the power module fixing screw 72 at the central region 414 of the case 40 can be received by the structure support portion 50. Also, in the case of a product in which the heat sink-integrated power module 20 is completed by attaching other components thereto, the load at the time when vibration is applied to the power semiconductor device 100 can be received by the structure support portion 50. Therefore, the productivity of the power semiconductor device 100 is increased, and a power semiconductor device having high vibration resistance can be realized.

[0146] Next, the effect on the heat dissipation performance of the power semiconductor device 100 described above will be described. Figure 25 is a schematic view of the flow of air inside the holding portion 60 of the power semiconductor device 100 according to Embodiment 1. Figure 26 is a schematic view of the flow of air inside the holding portion 60 of the power semiconductor device according to the comparative example. In Figure 25 and Figure 26 , the state observed by looking through a portion of the power semiconductor device is shown. In the case of the power semiconductor device according to the comparative example, as with the power semiconductor device 100, the air current 200 delivered to the power semiconductor device from the air supply system flows inside the holding portion 60 around the heat dissipation fins 1a of the heat sink 1, thereby promoting the dissipation of heat generated at the semiconductor elements 5 of the power module 11 at the heat dissipation fins 1a.

[0147] However, in the case of the power semiconductor device according to the comparative example, since the structure support portion 50 is not provided in the region corresponding to the central region 414 of the case 40, as shown in Figure 26As shown, the first airflow vector 211, which does not contribute to heat dissipation at the heat dissipation fins 1a, is generated in the region corresponding to the central region 414 of the housing 40. Also, by generating the first airflow vector 211, the airflow in the interior of the holding portion 60 is disturbed, and the second airflow vector 212, which does not contribute to heat dissipation at the heat dissipation fins 1a, is generated in the region in the interior of the holding portion 60 corresponding to the central region 414 of the housing 40 and the region in the interior of the holding portion 60 corresponding to the end region 415 of the housing 40. In this case, the flow rate of the airflow flowing between the adjacent heat dissipation fins 1a decreases, the thermal conductivity of the air from the heat dissipation fins 1a to the surroundings of the heat dissipation fins 1a decreases, and the heat dissipation performance of the heat sink 1 decreases.

[0148] On the other hand, in the case of the power semiconductor device 100 in which the structure support portion 50 is provided in the region corresponding to the central region 414 of the housing 40, as shown, the first airflow vector 211 and the second airflow vector 212, which do not contribute to heat dissipation at the heat dissipation fins 1a, are not generated. Therefore, in the case of the power semiconductor device 100, the rectified airflow 200 flows between the adjacent heat dissipation fins 1a, and thus the heat dissipation performance of the heat dissipation fins 1a as designed can be obtained. Figure 25

[0149] In the case of the power semiconductor device 100 described above, by using the plurality of heat sink-integrated power modules 20 having high heat dissipation performance, a power semiconductor device having a large power capacity can be produced at a high productivity as compared with a power semiconductor device having a configuration in which a plurality of power modules are fixed to one heat sink using a thermally conductive grease and a power semiconductor device having a configuration in which a monolithic heat sink and one power module are fixed using a thermally conductive grease. Also, in the case of the power semiconductor device 100, in the case of replacing the heat sink-integrated power modules 20, since the thermally conductive grease is not used, the processes such as removal and repositioning of the thermally conductive grease are not required, and the heat sink-integrated power modules 20 can be replaced only by detaching the screws, and thus the productivity and the maintainability are good.

[0150] Next, the method of fixing the structure support portion 50 to the outer frame 30 will be described. Figure 27 FIG. 1 is a first cross-sectional view showing an example of the method of fixing the structure support portion 50 of the power semiconductor device 100 according to Embodiment 1 to the outer frame 30. Figure 28 FIG. 2 is a second cross-sectional view showing an example of the method of fixing the structure support portion 50 of the power semiconductor device 100 according to Embodiment 1 to the outer frame 30.

[0151] In the case of the power semiconductor device 100 according to Embodiment 1, the structure support portion 50 is fixed to the outer frame 30 by the method shown in FIG. 1. Figure 27 ​In the illustrated example, the construction support 50 is fixed to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by the welding portion 73. In Figure 28 In the illustrated example, the construction support 50 is fixed to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by the construction support fixing screw 74. In addition, the method of fixing the construction support 50 to the outer frame 30 is not limited to the above-described example, and any method can be applied as long as the construction support 50 can be fixed to the outer frame 30, such as fixing the construction support 50 to the outer frame 30 by an adhesive.

[0152] In the illustrated example, the construction support 50 is fixed to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by the construction support fixing screw 74. In Figure 28 In the illustrated example, a cross section at a portion where the construction support fixing screw 74 is fastened by a screw is shown. In Figure 28 In the illustrated example, in the construction support 50, the screw fastening region 50a is provided in a region of a portion in the length direction of the construction support 50. The screw fastening region 50a is a region for fixing the construction support 50 to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by the construction support fixing screw 74.

[0153] The screw fastening region 50a can be provided at any position in the length direction of the construction support 50 as long as the construction support 50 can be fixed to the outer frame 30 by the construction support fixing screw 74. In addition, the screw fastening region 50a can be provided in any number as long as the construction support 50 can be fixed to the outer frame 30 by the construction support fixing screw 74. The screw fastening region 50a can be provided at, for example, one portion of the central portion in the length direction of the construction support 50, and can be provided at, for example, two portions at both end sides in the length direction of the construction support 50.

[0154] The height of the screw fastening region 50a can be any height as long as the construction support 50 can be fixed to the outer frame 30 by the construction support fixing screw 74. In Figure 28 In the illustrated example, the height of the screw fastening region 50a is set to a height of 1 / 2 of the height of a region other than the screw fastening region 50a at the construction support 50. In addition, the height of the screw fastening region 50a can be set to the same height as the height of the region other than the screw fastening region 50a at the construction support 50. In this case, the central region 414 of the housing 40 is not provided in a region corresponding to the upper portion of the screw fastening region 50a.

[0155] Figure 29 FIG. 3 is a third cross-sectional view illustrating an example of a method of fixing the construction support 50 of the power semiconductor device 100 according to Embodiment 1 to the outer frame 30. Figure 30is a fourth cross-sectional view showing an example of a method of fixing the structure support portion 50 of the power semiconductor device 100 according to Embodiment 1 to the outer frame 30. Figure 29 is a view corresponding to Figure 27 is a view corresponding to Figure 30 is a view corresponding to Figure 28 is a view corresponding to

[0156] If the dimensional fluctuation at the time of manufacturing each component constituting the holding portion 60 and the assembly tolerance are taken into consideration, as shown in Figure 29 and Figure 30 , it is possible that the central region 414 of the case 40 does not contact the upper surface of the structure support portion 50, and a gap 80 is generated between the central region 414 of the case 40 and the upper surface of the structure support portion 50. In this case, when the power module fixing screw 72 is used to fix the heat sink-integrated power module 20 to the case 40, the case 40 is deformed by the screw fastening of the power module fixing screw 72, and thus the central region 414 of the case 40 contacts the upper surface of the structure support portion 50. Further, by the central region 414 of the case 40 contacting the upper surface of the structure support portion 50, the load at the time of fixing the heat sink-integrated power module 20 to the case 40 can be received by the structure support portion 50.

[0157] Therefore, as shown in Figure 29 , even in the case where the gap 80 is generated between the central region 414 of the case 40 and the upper surface of the structure support portion 50, the deformation of the case 40 at the time of screw fastening of the power module fixing screw 72 can be reduced by providing the structure support portion 50 to the holding portion 60. Thus, the power semiconductor device 100 can suppress the deflection of the case 40 at the time of screw fastening of the power module fixing screw 72, and can reduce the generation rate of defects at the time of fixing the heat sink-integrated power module 20 to the case 40, and the productivity is improved. Further, with respect to the vibration resistance of a product completed by mounting other components to the heat sink-integrated power module 20, the deformation of the case 40 at the time of applying a vibration to the power semiconductor device 100 can be suppressed, or the deformation of the case 40 can be controlled. Therefore, the vibration resistance of the product is improved.

[0158] As described above, the power semiconductor device 100 can obtain the same effect as in the case where no gap 80 is generated between the central region 414 of the case 40 and the upper surface of the structure support portion 50, even in the case where the case 40 does not contact the structure support portion 50, that is, in the case where the gap 80 is generated between the central region 414 of the case 40 and the upper surface of the structure support portion 50.

[0159] In the above, the configuration of the power semiconductor device 100 in which the configuration support portion 50 is fixed to the housing 40, and the housing 40 is fixed to the outer frame 30 was explained, but the same effects as the above can be obtained even in a case in which the configuration support portion 50 is fixed to the housing 40. Figure 31 is a first cross-sectional view showing an example of a method of fixing the configuration support portion 50 of the power semiconductor device 100 according to Embodiment 1 to the housing 40. Figure 32 is a second cross-sectional view showing an example of a method of fixing the configuration support portion 50 of the power semiconductor device 100 according to Embodiment 1 to the housing 40.

[0160] In Figure 31 In the example shown in FIG. 8, the upper surface of the configuration support portion 50 is fixed to the central region 414 of the housing 40 by the welding portion 75, and the lower surface is in contact with the inner surface 31a of the bottom surface portion 31 of the outer frame 30. In Figure 32 In the example shown in FIG. 9, the upper surface of the configuration support portion 50 is fixed to the central region 414 of the housing 40 by the configuration support portion fixing screw 76, and the lower surface is in contact with the inner surface 31a of the bottom surface portion 31 of the outer frame 30. Further, the method of fixing the configuration support portion 50 to the housing 40 is not limited to the examples described above, and any method can be applied as long as the configuration support portion 50 can be fixed to the housing 40, such as fixing the configuration support portion 50 to the housing 40 by an adhesive.

[0161] Figure 33 is a flowchart showing a flow of another manufacturing method of the power semiconductor device 100 according to Embodiment 1. Here, the manufacturing method of the power semiconductor device 100 in a case in which the configuration support portion 50 is fixed to the housing 40 is explained.

[0162] First, in step S210, the configuration support portion 50 is installed and fixed to the housing 40. The configuration support portion 50 is fixed to the housing 40 by the welding portion 75 or the configuration support portion fixing screw 76 as described above.

[0163] Next, in step S220, the housing 40 is fixed to the outer frame 30 in a screw-fastened manner using the housing fixing screw 71 as in the case of step S120.

[0164] Next, in step S230, the heat sink-integrated power module 20 is mounted to the housing 40 as in the case of step S130.

[0165] Next, in step S240, the heat sink-integrated power module 20 is fixed to the housing 40 in a screw-fastened manner as in the case of step S140.

[0166] Figure 34 is a first cross-sectional view showing the configuration of the power semiconductor device 100 in the case where the construction support portion 77 with an elastic function is applied to the power semiconductor device 100 related to Embodiment 1. Figure 35 is a second cross-sectional view showing the configuration of the power semiconductor device 100 in the case where the construction support portion 77 with an elastic function is applied to the power semiconductor device 100 related to Embodiment 1. In order to fix the case 40 and the construction support portion 50 in a state where the case 40 and the construction support portion 50 are reliably in contact with each other, as shown in Figure 34 and Figure 35 , the construction support portion 77 with an elastic function can also be used.

[0167] The construction support portion 77 with an elastic function is a construction support portion having elasticity. Therefore, even in the case where, in order to fix the case 40 and the construction support portion 50, fluctuations in the dimensions at the time of manufacturing of each component constituting the holding portion 60 or assembly tolerances are generated by using the construction support portion 77 with an elastic function, the fluctuations in the dimensions at the time of manufacturing of each component and the assembly tolerances are absorbed due to the elasticity of the construction support portion 77 with an elastic function. Thus, the power semiconductor device 100 can fix the case 40 and the construction support portion 50 in a state where the case 40 and the construction support portion 50 are reliably in contact with each other. The power semiconductor device 100 can further stably improve the vibration resistance by using the construction support portion 77 with an elastic function.

[0168] In the example shown in Figure 34 and Figure 35 , in the case of the construction support portion 77 with an elastic function, the construction support portion is divided into two divided portions, i.e., a first divided construction support portion 77al and a second divided construction support portion 77a2, and has a configuration in which a coil spring 77b is interposed between the first divided construction support portion 77al and the second divided construction support portion 77a2. The first divided construction support portion 77al is disposed on the central region 414 side of the case 40 in the height direction. The second divided construction support portion 77a2 is disposed on the bottom surface portion 31 side of the frame 30 in the height direction.

[0169] Further, in the example shown in Figure 34 , in the case of the construction support portion 77 with an elastic function, the second divided construction support portion 77a2 disposed on the bottom surface portion 31 side of the frame 30 in the height direction is fixed to the inner surface 31a of the bottom surface portion 31 of the frame 30 by a welding portion 73. On the other hand, in the example shown in Figure 35 , in the case of the construction support portion 77 with an elastic function, the second divided construction support portion 77a2 disposed on the bottom surface portion 31 side of the frame 30 in the height direction is fixed to the inner surface 31a of the bottom surface portion 31 of the frame 30 by a construction support portion fixing screw 74.

[0170] In Figure 35 In the example shown, a cross section at a portion where the constitution support fixing screw 74 is screw-fastened is shown. In Figure 35 In the example shown, the screw-fastening region 77c is provided at a region of a portion in the length direction of the 2nd divided constitution support 77a2. The length direction of the 2nd divided constitution support 77a2 can also be referred to as the length direction of the constitution support 77 with elastic function. The screw-fastening region 77c is a region for fixing the 2nd divided constitution support 77a2 to the inner surface 31a of the bottom surface portion 31 of the outer frame 30 by the constitution support fixing screw 74. Above the screw-fastening region 77c in the height direction, the coil spring 77b and the 1st divided constitution support 77a1 are not disposed.

[0171] As for the screw-fastening region 77c, as long as the 2nd divided constitution support 77a2 can be fixed to the outer frame 30 by the constitution support fixing screw 74, it can be provided at any position in the length direction of the 2nd divided constitution support 77a2. Also, as long as the 2nd divided constitution support 77a2 can be fixed to the outer frame 30 by the constitution support fixing screw 74, the screw-fastening region 77c can be provided in any number. The screw-fastening region 77c can be provided at, for example, one portion in the center of the length direction of the 2nd divided constitution support 77a2, or can be provided at, for example, two portions at both ends in the length direction of the 2nd divided constitution support 77a2.

[0172] As for the height of the screw-fastening region 77c, as long as the 2nd divided constitution support 77a2 can be fixed to the outer frame 30 by the constitution support fixing screw 74, it can be set to any height. In Figure 35 In the example shown, the height of the screw-fastening region 77c is set to a height of 1 / 3 of the height of the region other than the screw-fastening region 77c at the 2nd divided constitution support 77a2. Also, the height of the screw-fastening region 77c can be set to the same height as the height of the region other than the screw-fastening region 77c at the 2nd divided constitution support 77a2.

[0173] Further, the constitution of the constitution support 77 with elastic function is not limited to the example described above. For example, as for the power semiconductor device 100, even in the case of having a structure in which a sponge with elastic function is interposed between at least one of the inner surface 31a of the bottom surface portion 31 of the outer frame 30 and the constitution support 50 and the central region 414 of the housing 40 and the constitution support 50, the same effects as described above can be obtained.

[0174] Next, the positional relationship between the structural support 50, the radiator base 1b of the integrated power module 20, and the housing 40 will be explained. Figure 36 This is a first cross-sectional view illustrating the positional relationship between the structural support 50 of the power semiconductor device 100 according to Embodiment 1, the heat sink base 1b of the integrated power module 20, and the housing 40.

[0175] If we focus on the screw fastening part of the power semiconductor device 100, then as Figure 36 As shown, the width of the preferred structure support 50, i.e., the width 50L of the structure support 50, is greater than the gap 81 between the heat sink bases 1b of adjacent heat sink integrated power modules 20 in the left-right direction. The width 50L of the structure support 50 is set to a size that allows for screw fastening of the power module fixing screws 72 in the central region 414 of the housing 40.

[0176] Furthermore, the heat sink base 1b of the adjacent integrated heat sink power module 20 in the left-right direction is mounted on the housing 40. In this state, the heat sink base 1b and the housing 40 are fixed in the end region 415 of the housing 40 by power module fixing screws 72. In addition, the power module fixing screws 72 are tightened from above the central region 414 of the housing 40, thereby fixing the heat sink base 1b, the housing 40, and the structural support 50 by power module fixing screws 72.

[0177] Thus, a power semiconductor device 100 with higher vibration resistance is obtained, in which the integrated heat sink power module 20 is firmly fixed to the holding part 60. That is, by setting the above-described structure, the cross-sectional area of ​​the air passage along the XZ plane inside the holding part 60 is reduced, the airflow velocity between adjacent heat sink fins 1a is increased, the thermal conductivity of the air from between the heat sink fins 1a to the air around the heat sink fins 1a is increased, and the heat dissipation performance of the heat sink 1 becomes optimal.

[0178] Figure 37 This is a second cross-sectional view illustrating the relationship between the structural support 50 of the power semiconductor device 100 according to Embodiment 1, the heat sink base 1b of the integrated power module 20, and the housing 40. Figure 38 This is a third cross-sectional view illustrating the relationship between the structural support 50 of the power semiconductor device 100 according to Embodiment 1, the heat sink base 1b of the integrated power module 20, and the housing 40.

[0179] exist Figure 37 In the configuration shown, the width dimension 50L of the support portion is greater than the dimension of the gap 81 between the heat sink bases 1b of adjacent integrated heat sink power modules 20 in the left-right direction.Figure 38 In the illustrated configuration, the configuration support portion width dimension 50L is smaller than the dimension of the gap 81 between the heat sink bases 1b of the heat sink-integrated power modules 20 adjacent in the left-right direction. The dimension of the gap 81 is set to a dimension that enables screw fastening of the case fixing screws 71 in the central region 414 of the case 40.

[0180] In Figure 37 The illustrated configuration and Figure 38 In the illustrated configuration, the case 40 and the configuration support portion 50 are fixed by the case fixing screws 71. In Figure 37 The illustrated configuration and Figure 38 In the illustrated configuration, a configuration of the power semiconductor device 100 that ensures the fixing strength of the holding portion 60 and has high vibration resistance is obtained. Further, the vibration resistance of the power semiconductor device 100 is improved by Figure 36 The illustrated configuration Figure 37 The illustrated configuration Figure 38 The order of the illustrated configuration becomes good.

[0181] In addition, in Figure 36 In the illustrated configuration, the number of screws used can be reduced compared to Figure 37 The illustrated configuration and Figure 38 Compared to the illustrated configuration, the number of screws used can be reduced, the productivity of the power semiconductor device 100 is improved, and the manufacturing cost of the power semiconductor device 100 can be reduced.

[0182] Next, the shape and arrangement of the configuration support portion 50 will be described. Figure 39 is a first plan view that describes the shape and arrangement of the configuration support portion 50 of the power semiconductor device 100 according to Embodiment 1. In Figure 39 In Figure 39 In the illustrated configuration, in terms of the configuration support portion 50, in the in-plane direction of the bottom surface portion 31 of the outer frame 30 and the in-plane direction of the case 40, the length direction of the configuration support portion 50 is set to be parallel to the depth direction of the power semiconductor device 100, that is, the advancing direction of the air current 200 in the interior of the holding portion 60. In addition, the configuration support portion 50 continuously extends from the end portion 33 on the front surface side of the outer frame 30 to the end portion 34 on the back surface side of the outer frame 30. That is, the configuration support portion 50 continuously extends in the direction from the air inflow port toward the air outflow port in the region of the holding portion 60 from the air inflow port to the air outflow port. Further, the shape and arrangement of the configuration support portion 50 are not limited to Figure 39 The illustrated configuration.

[0183] Figure 40is a second plan view for describing the shape and arrangement of the structure support portion 50 of the power semiconductor device 100 according to Embodiment 1. In Figure 40 , the structure of a part of the power semiconductor device 100 is omitted. In Figure 40 , the structure of a part of the power semiconductor device 100 is omitted. In the structure illustrated in FIG. 8, the structure support portion 50 is partially arranged in the region of the upwind side of the traveling direction of the air current 200 flowing inside the holding portion 60, including the adjacent corners of the respective heat sink bases lb of the two heat sink-integrated power modules 20 adjacent in the left-right direction. In addition, the structure support portion 50 is partially arranged in the region of the downwind side of the traveling direction of the air current 200 flowing inside the holding portion 60, including the adjacent corners of the respective heat sink bases lb of the two heat sink-integrated power modules 20 adjacent in the left-right direction. That is, the structure support portion 50 is discontinuously arranged in the direction from the air inflow port to the air outflow port in the region of the holding portion 60.

[0184] Figure 41 is a third plan view for describing the shape and arrangement of the structure support portion 50 of the power semiconductor device 100 according to Embodiment 1. In Figure 41 , the structure of a part of the power semiconductor device 100 is omitted. In Figure 41 , the structure of a part of the power semiconductor device 100 is omitted. In the structure illustrated in FIG. 8, the structure support portion 50 is partially arranged in the region of the upwind side of the traveling direction of the air current 200 flowing inside the holding portion 60, including the adjacent corners of the respective heat sink bases lb of the two heat sink-integrated power modules 20 adjacent in the left-right direction. In addition, the structure support portion 50 is partially arranged in the region of the downwind side of the traveling direction of the air current 200 flowing inside the holding portion 60, including the adjacent corners of the respective heat sink bases lb of the two heat sink-integrated power modules 20 adjacent in the left-right direction. That is, the structure support portion 50 is discontinuously arranged in the direction from the air inflow port to the air outflow port in the region of the holding portion 60.

[0185] Figure 42is a fourth plan view that describes the shape and arrangement of the structure support section 50 of the power semiconductor device 100 according to Embodiment 1. In Figure 42 , the structure of a part of the power semiconductor device 100 is omitted. In Figure 42 , the structure of a part of the power semiconductor device 100 is omitted. In

[0186] By Figures 39 to 42 , the structure of a part of the power semiconductor device 100 is omitted. In Figure 39 , the structure of a part of the power semiconductor device 100 is omitted. In Figure 40 , the structure of a part of the power semiconductor device 100 is omitted. In Figure 41 , the structure of a part of the power semiconductor device 100 is omitted. In Figure 42 , the structure of a part of the power semiconductor device 100 is omitted. In

[0187] As described above, in the power semiconductor device 100 according to Embodiment 1, the structure support section 50 is arranged at the bottom surface section 31 of the outer frame 30 of the holding section 60 in a manner to bear the load of the plurality of heat sink integrated power modules 20 and the case 40 that mounts the plurality of heat sink integrated power modules 20. Therefore, in the power semiconductor device 100, the flexure of the case 40 that occurs when the plurality of heat sink integrated power modules 20 are fixed to the case 40 can be suppressed. Thus, in the power semiconductor device 100, the heat dissipation of the heat sink 1 that is caused by the gap that occurs between the heat sink 1 and the case 40 in the case 40 flexes can be suppressed or prevented, and the heat dissipation and the vibration resistance of the heat generated in the power module 11 are improved.

[0188] Further, the structure support section 50 is arranged at the bottom surface section 31 of the outer frame 30 in a region that corresponds to the central region 414 of the case 40. Thus, the structure support section 50 can equally bear the load of the two heat sink integrated power modules 20 that are adjacent in the left-right direction, and the flexure of the case 40 that occurs when the plurality of heat sink integrated power modules 20 are fixed to the case 40 can be further suppressed.

[0189] In addition, in the power semiconductor device 100, by disposing the structure support portion 50 on the windward side inside the holding portion 60, a wind path can be formed by the structure support portion 50 to rectify the airflow 200 flowing into the inside of the holding portion 60, and the rectified wind can flow into the heat sink 1, and thus the heat dissipation of the heat generated in the power module 11 is improved.

[0190] Further, according to the structure of the power semiconductor device 100, the plurality of heat sink integrated power modules 20 having high heat dissipation performance can be applied to a high-capacity power system using a plurality of power modules in a state of having high heat dissipation and high vibration resistance.

[0191] Therefore, according to the power semiconductor device 100 according to Embodiment 1, an effect of being able to suppress the deflection of the case in which a plurality of power modules and heat sinks are mounted is obtained.

[0192] Embodiment 2

[0193] Figure 43 is a cross-sectional view showing the structure of the power semiconductor device 101 according to Embodiment 2. The power semiconductor device 101 according to Embodiment 2 differs from the power semiconductor device 100 according to Embodiment 1 in that a structure support portion 51 is provided instead of the structure support portion 50. The structure support portion 51 has a through-hole 51a that penetrates the structure support portion 51 in the depth direction. That is, the structure support portion 51 has the through-hole 51a that penetrates the structure support portion 51 in the direction from the inflow port to the outflow port of the holding portion 60. In the power semiconductor device 101, the surface area of the structure support portion 51 is increased by the structure support portion 51 having the through-hole 51a, and thus the heat dissipation performance of the structure support portion 51 with respect to the heat generated at the semiconductor element 5 of the power module 11 is improved.

[0194] Figure 44 is a cross-sectional view showing the structure of the power semiconductor device 102 according to Embodiment 2. The power semiconductor device 102 according to Embodiment 2 differs from the power semiconductor device 100 according to Embodiment 1 in that a structure support portion 52 is provided instead of the structure support portion 50. The structure support portion 52 has a concave-convex 52a on the surface thereof in addition to the structure of the structure support portion 51. In the power semiconductor device 102, the surface area of the structure support portion 52 is increased by the structure support portion 52 having the concave-convex 52a, and thus the heat dissipation performance of the structure support portion 52 with respect to the heat generated at the semiconductor element 5 of the power module 11 is improved.

[0195] Embodiment 3

[0196] Figure 45 is a cross-sectional view showing the structure of the heat sink integrated power module 21 according to Embodiment 3.Figure 46 is a sectional view showing the structure of the power semiconductor device 103 according to Embodiment 3.

[0197] As for the above-described power semiconductor device 100, since the heat sink-integrated power module 20 in which one heat sink 1 is provided for one power module 11 is used, the operability at the time of assembling the power semiconductor device 100, the detachability of components at the time of maintenance are improved. On the other hand, as for the power semiconductor device 100, since one heat sink 1 is monolithically formed for one power module 11, the number of screws for fixing the heat sink-integrated power module 20 to the case 40 increases compared to the case where a plurality of power modules are mounted for one heat sink, and there is a possibility that the productivity decreases.

[0198] Therefore, as shown in Figure 45 , as for the heat sink-integrated power module 21 according to Embodiment 3, a convex portion 22 is provided at the end portion of the heat sink base 1b in the in-plane direction of the heat sink base 1b.

[0199] As shown in Figure 45 , as for the first heat sink-integrated power module 21a which is the heat sink-integrated power module 21, at the end portion of the heat sink base 1b in the in-plane direction of the heat sink base 1b, a first convex portion 22a which is the convex portion 22 is provided. The first convex portion 22a is provided at the end portion of the heat sink base 1b on the side of the other heat sink-integrated power module 21 adjacent in the left-right direction. In addition, the first convex portion 22a is provided at the upper portion at the end portion of the heat sink base 1b.

[0200] As shown in Figure 45 , as for the second heat sink-integrated power module 21b which is the heat sink-integrated power module 21, at the end portion of the heat sink base 1b in the in-plane direction of the heat sink base 1b, a second convex portion 22b which is the convex portion 22 is provided. The second convex portion 22b is provided at the end portion of the heat sink base 1b on the side of the other heat sink-integrated power module 21 adjacent in the left-right direction. In addition, the second convex portion 22b is provided at the lower portion at the end portion of the heat sink base 1b.

[0201] As shown in Figure 46As shown, the first heat sink-integrated power module 21a and the second heat sink-integrated power module 21b are mounted to the case 40 in a manner that the first protruding portion 22a of the first heat sink-integrated power module 21a and the second protruding portion 22b of the second heat sink-integrated power module 21b are overlapped. Further, the first protruding portion 22a and the second protruding portion 22b after being overlapped, the central region 414 of the case 40, and the structure support portion 50 are screw-fastened by the power module fixing screw 72, thereby fixing the first protruding portion 22a, the second protruding portion 22b, and the structure support portion 50. That is, the first protruding portion 22a, the second protruding portion 22b, the central region 414 of the case 40, and the structure support portion 50 are screw-fastened in a state of being overlapped.

[0202] As for the power semiconductor device 103, by adopting such a configuration, the number of screws for fixing the heat sink-integrated power module 21 to the case 40 can be reduced, and the productivity is improved.

[0203] Further, by fixing the first protruding portion 22a, the second protruding portion 22b, and the structure support portion 50 by one power module fixing screw 72, the region for fixing the first heat sink-integrated power module 21a, the second heat sink-integrated power module 21b, and the structure support portion 50 in the central region 414 of the case 40 can be narrowed in the left-right direction. Therefore, the number of the heat dissipation fins 1a provided in the heat sink base 1b can be increased. Thus, as for the power semiconductor device 103, the heat dissipation performance realized by the heat sink 1 for the heat generated at the semiconductor element 5 of the power module 11 is improved.

[0204] The configuration shown in the above embodiments represents one example, and can be combined with other known technologies, and the embodiments can be combined with each other, and a part of the configuration can be omitted or changed without departing from the gist.

[0205] Explanation of Reference Signs

[0206] 1 heat sink, 1a heat sink fin, 1b heat sink base, 1bu heat sink base uneven portion, 1bp outer peripheral portion, 1bs1 first short side of heat sink base, 1bs2 second short side of heat sink base, 1bl1 first long side of heat sink base, 1bl2 second long side of heat sink base, 2 fin base, 2u fin base uneven portion, 3 insulating sheet, 4 wiring conductor, 5 semiconductor element, 6 solder, 7 metal conductor, 8 control terminal, 9 encapsulation resin, 10 main terminal, 11 power module, 12 heat sink of first modification example, 13 heat sink of second modification example, 15 bonding material, 16 adhesive, 20, 21 heat sink-integrated power module, 22a first convex portion, 22b second convex portion, 30 outer frame, 31 bottom surface portion, 31a inner surface, 32 side surface portion, 33 end portion on front surface side, 34 end portion on back surface side, 40 housing, 41 opening portion, 50, 51, 52 structure support portion, 50a, 77c screw fastening region, 50L structure support portion width dimension, 51a through-hole, 52a uneven portion, 60 holding portion, 71 housing fixing screw, 72 power module fixing screw, 73, 75 welding portion, 74, 76 structure support portion fixing screw, 77 structure support portion with elastic function, 77a1 first divided structure support portion, 77a2 second divided structure support portion, 77b coil spring, 80, 81 gap, 100, 101, 102, 103 power semiconductor device, 200 air flow, 211 first air flow vector, 212 second air flow vector, 411 short side of opening portion, 411a first short side of opening portion, 411b second short side of opening portion, 412 long side of opening portion, 412a first long side of opening portion, 412b second long side of opening portion, 413 adjacent region, 414 central region, 415 end portion region, 416 long side of housing.

Claims

1. A power semiconductor device, characterized by, Having: A heat sink integrated power module that integrates a power module and a heat sink, a plurality of heat sink fins of the heat sink being provided to a heat sink base, and heat generated in the power module being radiated; A holding portion having a box shape, an air inflow port and an air outflow port of the holding portion being provided opposite to each other, a plurality of opening portions being formed in one face that connects the air inflow port and the air outflow port; And A structure support portion being provided inside the holding portion, receiving a load in a direction from the one face toward the inside of the holding portion, and supporting the one face, In the plurality of heat sink integrated power modules, the plurality of heat sink fins are inserted into the inside of the holding portion from the opening portions, and in a face direction of the heat sink base, an outer peripheral portion of the heat sink base is supported on an adjacent region adjacent to the opening portions on the one face, The structure support portion is arranged at positions corresponding to the heat sink bases of the adjacent heat sink integrated power modules in the width direction of the holding portion in a state of extending in a direction from the air inflow port toward the air outflow port in a region from the air inflow port to the air outflow port, the width direction of the holding portion being a direction orthogonal to the direction from the air inflow port toward the air outflow port, The holding portion has: An outer frame having a U shape constituted by a bottom surface portion and two side surface portions erected from a pair of opposite end portions of the bottom surface portion; and A plate-shaped case constituting the one face supported by end portions of the two side surface portions that are free ends of the U shape, The adjacent region of the case and the outer peripheral portion of the heat sink base are fastened by screws.

2. The power semiconductor device according to claim 1, wherein The structure support portion is fixed to the outer frame and is in contact with the case.

3. The power semiconductor device according to claim 1, wherein The structure support portion is fixed to the case and is in contact with the outer frame.

4. The power semiconductor device according to claim 3, wherein A width of the structure support portion in a direction orthogonal to the direction from the air inflow port toward the air outflow port is larger than a gap between the heat sink bases of the adjacent heat sink integrated power modules in the width direction of the holding portion.

5. The power semiconductor device according to claim 3, wherein There are a first heat sink integrated power module and a second heat sink integrated power module that are the adjacent heat sink integrated power modules in the width direction of the holding portion, The first heat sink integrated power module has a first convex portion at an end portion of the heat sink base on the side of the second heat sink integrated power module, The second heat sink integrated power module has a second convex portion at an end portion of the heat sink base on the side of the first heat sink integrated power module, The first convex portion, the second convex portion, the case, and the structure support portion are fastened by screws in a state of being overlapped.

6. The power semiconductor device according to any one of claims 1 to 5, wherein The configuration support portion continuously extends in the region from the flow inlet to the flow outlet in the direction from the flow inlet toward the flow outlet.

7. The power semiconductor device according to any one of claims 1 to 5, wherein The configuration support portion is discontinuously arranged in the region from the flow inlet to the flow outlet in the direction from the flow inlet toward the flow outlet.

8. The power semiconductor device according to any one of claims 1 to 5, wherein The configuration support portion has elasticity.

9. The power semiconductor device according to any one of claims 1 to 5, wherein The configuration support portion has a through-hole that penetrates the configuration support portion in the direction from the flow inlet toward the flow outlet.

10. The power semiconductor device according to any one of claims 1 to 5, wherein The configuration support portion has a concave-convex on a surface.

11. A method of manufacturing a power semiconductor device, characterized by, The process includes: fixing a configuration support portion to an outer frame having a U shape composed of a bottom surface portion and two side surface portions erected from opposite ends of the bottom surface portion; placing a housing of a plate shape in which a plurality of opening portions are formed on end portions of two side surface portions of the U shape; inserting a plurality of heat dissipation fins of a heat dissipation integrally formed power module in which a power module and a heat dissipation device that dissipates heat generated in the power module by providing a plurality of heat dissipation fins to a heat dissipation base are integrated from a plurality of opening portions to the inside of the outer frame, and placing an outer peripheral edge portion of the heat dissipation base in an in-plane direction of the heat dissipation base on an adjacent region adjacent to the opening portion in the housing; screw-fastening the housing and the outer frame; and screw-fastening the outer peripheral edge portion of the heat dissipation base and the adjacent region of the housing, the configuration support portion is arranged at a position corresponding to the heat dissipation base of the heat dissipation integrally formed power module adjacent thereto in a width direction of the U shape. The process includes:

12. A method of manufacturing a power semiconductor device, characterized by, fixing a configuration support portion to a housing of a plate shape in which a plurality of opening portions are formed; placing the housing on end portions of two side surface portions of the U shape of an outer frame having a U shape composed of a bottom surface portion and two side surface portions erected from opposite ends of the bottom surface portion; inserting a plurality of heat dissipation fins of a heat dissipation integrally formed power module in which a power module and a heat dissipation device that dissipates heat generated in the power module by providing a plurality of heat dissipation fins to a heat dissipation base from a plurality of opening portions to the inside of the outer frame, and placing an outer peripheral edge portion of the heat dissipation base in an in-plane direction of the heat dissipation base on an adjacent region adjacent to the opening portion in the housing; screw-fastening the housing and the outer frame; and screw-fastening the outer peripheral edge portion of the heat dissipation base and the adjacent region of the housing, the configuration support portion is arranged at a position corresponding to the heat dissipation base of the heat dissipation integrally formed power module adjacent thereto in a width direction of the U shape. ​ ​

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