Pre-cleaning device of sputter coating machine

Abstract

The pre-cleaning device comprises a cavity, one end of the top of a wafer taking hand lifting mechanism is connected with a wafer lifting tray assembly, firstly, a wafer is carried to a base through the wafer taking hand lifting mechanism, the wafer taking hand lifting mechanism is lowered till the movement of a wafer tray lifting mechanism is not affected, meanwhile, the wafer tray lifting mechanism is lowered, and the wafer tray lifting mechanism is lifted to the base through the wafer taking hand lifting mechanism. The wafer tray lifting mechanism is also a lifting mechanism and can enable the borne wafer to do any lifting motion, the wafer tray lifting mechanism is matched with the wafer lifting tray assembly, the movement stroke of the wafer can be greatly increased so as to be suitable for cleaning of various wafers, an upper radio frequency assembly is arranged above the cavity, a lower radio frequency assembly is arranged on the lower portion of the upper radio frequency assembly, and the wafer tray lifting mechanism is arranged in the cavity. The lower radio frequency emitting surface of the lower radio frequency assembly is the upper surface of the base, inert gas in the cavity is converted into ions through the upper radio frequency assembly and the lower radio frequency assembly, and impurities and compounds on the surface of the wafer are cleaned through ion bombardment of the wafer so as to achieve the pre-cleaning effect.

Description

Technical Field

[0001] The present invention relates to the field of film coating technology, and more specifically, to a pre-cleaning device for a sputtering coating machine. Background Art

[0002] Sputtering coating technology uses ions to bombard the surface of the target material. The phenomenon of atoms of the target material being knocked out is called sputtering. The atoms generated by sputtering are deposited on the surface of the substrate to form a film, which is called sputtering coating. In order to obtain high-quality thin films, a certain amount of working gas is filled in the magnetron sputtering device. By applying voltage to the two corresponding electrode plates, sufficient energy can be obtained under the electric field generated by the electrode plates, thereby colliding with the gas molecules between the electrode plates, ionizing, and generating ions. The ions collide with the target material under the action of the electric and magnetic fields, and the atoms of the target material are sputtered and deposited on the substrate to form a film. Accurately control the reaction gas pressure, the distance between the target material and the substrate, the sputtering power and other parameters to accurately control the deposition rate to obtain high-quality thin film materials.

[0003] The sputtering coating process requires heating and cooling of the wafer, during which some impurities and compounds will adhere to the surface of the wafer. Therefore, a cleaning device is needed to clean the surface of the wafer to achieve a higher degree of cleanliness.

[0004] Comparative document 1, CN107305858B, published on 20201110, discloses a pin mechanism and a pre-cleaning chamber. When the base is raised or lowered, each pin can penetrate the base until its top is higher or lower than the upper surface of the base, so that it can cooperate with the robot to realize the chip picking and placing operation.

[0005] That is, the insulating pad, mounting frame and mounting flange are fixedly connected to the bottom of the cavity and are immovable. The base moves only by relying on the lifting axis, and the movement trajectory can only be from the base to the ejector pin. After being supported by the ejector pin, the movement trajectory can no longer be changed, which has great limitations. Summary of the invention

[0006] In view of this, in order to solve the above problems, the present invention proposes a pre-cleaning device for a sputtering coating machine, wherein the wafer lifting tray assembly 51 is capable of moving up and down. First, the wafer is transported to the base 41 through the wafer hand lifting mechanism 5, and the wafer hand lifting mechanism 5 is lowered to a level that does not affect the movement of the wafer tray lifting mechanism 4. At the same time, the wafer tray lifting mechanism 4 is also a lifting mechanism that can perform any lifting and lowering movements on the carried wafer. In combination with the wafer lifting tray assembly 51, the movement range of the wafer can be greatly increased to suit the cleaning of a variety of wafers.

[0007] A pre-cleaning device for a sputtering coating machine comprises a chamber 1, wherein a bottom plate 11 is provided at the bottom of the chamber 1, and the characteristics are as follows: a first through hole 14 is provided on the bottom plate 11, and a wafer tray lifting mechanism 4 is connected to a base 41 through the first through hole 14; a second through hole 15 is also provided on the bottom plate 11, and a wafer picking and lifting mechanism 5 is connected through the second through hole 15; a wafer lifting tray assembly 51 is connected to a top end of the wafer picking and lifting mechanism 5; a plurality of wafer ejector pins 52 are provided on the wafer lifting tray assembly 51, and the wafer lifting tray assembly 51 is located at the lower part of the base 41 and the plurality of wafer ejector pins 52 pass through the body of the base 41; when the plurality of wafer ejector pins 52 move upward and protrude from the upper surface of the base 41, the top ends of the plurality of wafer ejector pins 52 contact with the lower surface of the incoming wafer, and are used to lift the incoming wafer so that it is separated from the external conveying device; when the plurality of wafer ejector pins 52 move downward and fall to the base When the wafer is below the upper surface of 41, the wafer is dropped onto the base 41, and the base 41 receives the wafer; the wafer lifting tray assembly 51 is capable of moving up and down, firstly the wafer is transported to the base 41 by the wafer hand lifting mechanism 5, and the wafer hand lifting mechanism 5 is lowered to the point where it does not affect the movement of the wafer tray lifting mechanism 4, at the same time, the wafer tray lifting mechanism 4 is also a lifting mechanism, which can make the carried wafer perform any lifting movement, and cooperate with the wafer lifting tray assembly 51, which can greatly increase the movement stroke of the wafer to be suitable for cleaning of various wafers, an upper RF assembly 6 is provided above the cavity 1, a lower RF assembly 9 is provided at the lower part of the upper RF assembly 6, the lower RF emission surface of the lower RF assembly 9 is the upper surface of the base 41, the inert gas in the cavity 1 is converted into ions by the upper RF assembly 6 and the lower RF assembly 9, and then the impurities and compounds on the surface of the wafer are cleaned by ion bombardment of the wafer to achieve a pre-cleaning effect.

[0008] Furthermore, a lower RF generating device 7 is provided on one side below the bottom plate 11 , and the generating device 7 is electrically connected to the lower RF component 9 to provide electrical energy for the lower RF component 9 .

[0009] Furthermore, the cavity 1 is a hollow cavity 1 surrounded by a shell, a wafer delivery port 12 is provided on one side of the cavity 1, and a connection port 13 is provided on the other side for connecting a molecular pump 8 to evacuate the cavity 1 through the molecular pump 8.

[0010] Furthermore, a transfer flange 81 is provided between the molecular pump 8 and the connecting port 13 , and an environmental capacitance diaphragm vacuum gauge 82 is provided on the transfer flange 81 for detecting the vacuum degree in the cavity 1 .

[0011] Furthermore, a plurality of circles of grooves are provided on the top of the cavity 1, and the plurality of circles of grooves include a first groove 16, a second groove 17, and a third groove 18 from the inner circle to the outer circle, wherein the first groove 16 is used to connect the anti-sticking shield 2, the second groove 17 is used to connect the quartz cover 3, and the third groove 18 is used to connect the upper RF component 6.

[0012] Furthermore, the anti-fouling shield 2 is placed in the cavity 1, and the anti-fouling shield 2 is a hollow annular structure. The anti-fouling shield 2 includes an upper edge 21 and a lower edge 22. The upper edge 21 is bent outward and connected to the first groove 16 through a sealing ring, and the lower edge 22 of the anti-fouling shield 2 is bent toward the base 41. The lower edge 22 of the anti-fouling shield 2 is located on the upper part of the base 41, and the wafer is located in the hollow structure of the anti-fouling shield 2. The anti-fouling shield 2 is used to block impurities from falling on the wafer after cleaning.

[0013] Furthermore, the quartz cover 3 is placed in the upper RF component 6, the bottom edge of the quartz cover 3 is connected to the second groove 17, and a sealing ring is provided at the connection between the bottom edge of the quartz cover 3 and the second groove 17. The quartz cover 3 cooperates with the lower RF component 9 so that the inert gas it transports is ionized, thereby cleaning the wafer.

[0014] Furthermore, the wafer tray lifting mechanism 4 includes a cylinder 44, a spindle sleeve 45, a RF spindle 46, a bellows 48 and a base 41. The top of the spindle sleeve 45 is extended outwardly with a connecting plate 451, which is connected to the first through hole 14 through the connecting plate 451. The bottom of the spindle sleeve 45 is provided with a cylinder 44, and the spindle sleeve 45 is provided with a RF spindle 46. The bellows 48 is sleeved outside the RF spindle 46, and the base 41 is provided on the top of the RF spindle 46. The bottom of the bellows 48 is fixedly connected to the connecting plate 451, and the top of the bellows 48 is fixedly connected to the bottom of the base 41. The bellows 48 is used to achieve sealing in the cavity 1.

[0015] Furthermore, an insulator 42 is sleeved on the outer edge of the base 41 , and a base protective cover 43 is provided at the connection between the insulator 42 and the RF main shaft 46 .

[0016] Furthermore, a travel switch 47 is provided on the RF spindle 46 , which is used to control the lifting and lowering of the cylinder 44 .

[0017] Furthermore, the RF main shaft 46 is a hollow structure, which is used to transmit the connection line between the lower RF generating device 7 and the lower RF component 9 to achieve sealing.

[0018] Furthermore, the upper RF component 6 includes an RF cover 61, and the bottom edge of the RF cover 61 is snap-fitted to the third groove 18. The RF cover 61 protects the process from being affected by the magnetic field generated by the adjacent PVD chamber, thereby improving the uniformity of the process. A sealing ring and a conductive mesh are provided at the snap-fitting position, and the conductive mesh is used to obtain equipotential.

[0019] Furthermore, a copper coil 62 is provided on the inner wall of the RF cover 61 near the lower ring for supplying low-frequency power. By increasing the power of the copper coil 62 , the density of the plasma in the RF cover 61 increases.

[0020] Furthermore, the outer wall of the RF cover 61 is provided with a side contact block 63 and an upper contact block 64 for detecting whether the RF cover 61 is installed on the cavity 1 .

[0021] The working principle of the present invention is: by creating a plasma on the wafer and providing an electric field to attract ions to the wafer, the collision of ions with the wafer surface has enough energy to remove the material on the surface. Only argon is used in this process. Argon is an inert gas, so this is a non-reactive cleaning process. The process removes material on the entire wafer, not just at the bottom of the through-holes and contacts. The process wafer is coated with an oxide, and the oxide dielectric can prevent DC transmission. The high frequency of the RF power propagates on the dielectric surface to generate plasma. Electrons and ions are quickly transferred between the wafer and the plasma. A DC bias is established to balance the flow of electrons and ions. The ions are sufficiently accelerated by the DC bias to sputter and clean the wafer surface. In the pre-clean system, the plasma power must be increased to increase the etch rate. The increase in power also increases the DC bias. The DC bias and etch rate are determined solely by the plasma power. This dependency occurs because the pre-clean only has a capacitively coupled plasma. High bias and high etch rates can lead to device damage in the form of threshold voltage shift and low gate breakdown voltage. The RF system provides RF power to the pre-clean chamber. The high voltage excites the gas present in the chamber to strike the plasma. The positively charged ions are attracted to the negatively charged pedestal. These ions are on the wafer on the pedestal and etch the wafer surface vertically. RF matching adjusts the chamber impedance to match the RF cable impedance by adjusting the capacitive reactance and inductive reactance in the circuit. When the total capacitance and inductance values ​​in the circuit are equal, they cancel each other out to produce a resonant circuit that matches the ideal impedance. In the RF matching chamber circuit, the chamber, output capacitor, tuning capacitor, and output inductor are connected to form a parallel resonant circuit.

[0022] The operation of RF matching in this process is as follows:

[0023] 1. The robot transfers a wafer into the chamber, and the wafer tray lifting mechanism places the wafer on the base.

[0024] 2. The RF matching control board in preset mode sets the load capacitance and tuning capacitor to 3V.

[0025] 3. Argon process gas is introduced into the chamber.

[0026] 4. The RF generator is turned on, the load capacitor motor and the tuning capacitor motor start to move, and high voltage and high current hit the argon plasma in the chamber. When the plasma exists, the chamber shows capacitance and resistance in the circuit. In order to maintain the plasma and keep the high voltage in the chamber, the circuit should remain in a resonant state.

[0027] 5. The RF matching control board turns to automatic mode, and the circuit board starts to adjust the load capacitors and adjust the capacitor positions to minimize the RF reflected power. The load capacitors adjust the coupling between the input connector and the circuit, and the tuning capacitors adjust the capacitance in the circuit.

[0028] 6. When the RF matching keeps the input impedance at 50Ω and the circuit remains resonant, the plasma is maintained in the chamber for the etching process. When the impedance is not matched and the RF reflected power is greater than the system constant, the RF power transmission will be limited to protect the RF generator. If the RF reflected power remains at this level, the RF power will be turned off and the process will stop.

[0029] The beneficial effects of the present invention include: comprising a cavity 1, a bottom plate 11 is provided at the bottom of the cavity 1, a first through hole 14 is provided on the bottom plate 11, a wafer tray lifting mechanism 4 is connected to a base 41 through the first through hole 14, a second through hole 15 is further provided on the bottom plate 11, a wafer hand lifting mechanism 5 is connected through the second through hole 15, a wafer lifting tray assembly 51 is connected to the top end of the wafer hand lifting mechanism 5, a plurality of wafer ejector pins 52 are provided on the wafer lifting tray assembly 51, the wafer lifting tray assembly 51 is located at the lower part of the base 41 and the plurality of wafer ejector pins 52 pass through the body of the base 41, when the plurality of wafer ejector pins 52 move upward and protrude from the upper surface of the base 41, the top ends of the plurality of wafer ejector pins 52 contact with the lower surface of the incoming wafer, and are used to lift the incoming wafer so that it is separated from the external conveying device, when the plurality of wafer ejector pins 52 move downward and fall to the upper surface of the base 41 When the wafer is in the following position, the wafer is dropped onto the base 41, and the base 41 receives the wafer; the wafer lifting tray assembly 51 is capable of moving up and down, firstly the wafer is transported to the base 41 by the wafer hand lifting mechanism 5, and the wafer hand lifting mechanism 5 is lowered to a level that does not affect the movement of the wafer tray lifting mechanism 4, at the same time, the wafer tray lifting mechanism 4 is also a lifting mechanism, which can make the carried wafer perform any lifting movement, and cooperate with the wafer lifting tray assembly 51, which can greatly increase the movement stroke of the wafer to be suitable for cleaning of various wafers, an upper RF assembly 6 is provided above the chamber 1, a lower RF assembly 9 is provided at the lower part of the upper RF assembly 6, and the lower RF emitting surface of the lower RF assembly 9 is the upper surface of the base 41, the inert gas in the chamber 1 is converted into ions by the upper RF assembly 6 and the lower RF assembly 9, and then the impurities and compounds on the surface of the wafer are cleaned by ion bombardment of the wafer to achieve a pre-cleaning effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 This is an overall structural diagram of the pre-cleaning device of the sputtering coating machine of the present invention.

[0031] Figure 2 This is a structural diagram of the bottom plate of the pre-cleaning device of the sputtering coating machine of the present invention.

[0032] Figure 3 It is a partial structural diagram of the pre-cleaning device of the sputtering coating machine of the present invention.

[0033] Figure 4 This is a structural diagram of the anti-fouling shield of the pre-cleaning device of the sputtering coating machine of the present invention.

[0034] Figure 5 This is a structural diagram of the wafer lifting tray assembly of the pre-cleaning device of the sputtering coating machine of the present invention.

[0035] Figure 6This is a partial exploded view of the wafer tray lifting mechanism of the pre-cleaning device of the sputtering coating machine of the present invention.

[0036] Figure 7 This is a cavity structure diagram of the pre-cleaning device of the sputtering coating machine of the present invention.

[0037] Figure 8 This is a structural diagram of the radio frequency cover of the pre-cleaning device of the sputtering coating machine of the present invention.

[0038] Fig. 9 It is a partial cross-sectional view of the pre-cleaning device of the sputtering coating machine of the present invention.

[0039] Main component symbols

[0040] Cavity 1, bottom plate 11, wafer conveying port 12, connecting port 13, first through hole 14, second through hole 15, first groove 16, second groove 17, third groove 18, anti-scratch shield 2, upper edge 21, lower edge 22, quartz cover 3, wafer tray lifting mechanism 4, base 41, insulator 42, base protective cover 43, cylinder 44, spindle sleeve 45, connecting plate 451, RF spindle 46, travel switch 47, bellows 48, wafer hand lifting mechanism 5, wafer lifting tray assembly 51, wafer ejector pin 52, upper RF assembly 6, RF cover 61, copper coil 62, side contact block 63, upper contact block 64, lower RF generating device 7, molecular pump 8, adapter flange 81, environmental capacitance diaphragm vacuum gauge 82, lower RF assembly 9.

[0041] The following specific implementation manner will further illustrate the present invention in conjunction with the above-mentioned drawings. DETAILED DESCRIPTION

[0042] like Figure 1 As shown, it is the overall structure diagram of the pre-cleaning device of the sputtering coating machine of the present invention; Figure 2 As shown, it is a bottom plate structure diagram of the pre-cleaning device of the sputtering coating machine of the present invention; Figure 3 As shown, it is a partial structural diagram of the pre-cleaning device of the sputtering coating machine of the present invention; Figure 4 As shown in FIG. 1 , it is a diagram of the protective structure of the pre-cleaning device of the sputtering coating machine of the present invention; Figure 5 As shown, it is a structural diagram of a wafer lifting tray assembly of a pre-cleaning device of a sputtering coating machine of the present invention; Figure 6 As shown, it is a partial exploded view of the wafer tray lifting mechanism of the pre-cleaning device of the sputtering coating machine of the present invention; Figure 7 As shown, it is a cavity structure diagram of the pre-cleaning device of the sputtering coating machine of the present invention; Figure 8 As shown, it is a structural diagram of the radio frequency cover of the pre-cleaning device of the sputtering coating machine of the present invention; Fig. 9The figure shows a partial cross-sectional view of the pre-cleaning device of the sputtering coating machine of the present invention. Example

[0043] A pre-cleaning device for a sputtering coating machine comprises a chamber 1, wherein a bottom plate 11 is provided at the bottom of the chamber 1, and the characteristics are as follows: a first through hole 14 is provided on the bottom plate 11, and a wafer tray lifting mechanism 4 is connected to a base 41 through the first through hole 14; a second through hole 15 is also provided on the bottom plate 11, and a wafer picking and lifting mechanism 5 is connected through the second through hole 15; a wafer lifting tray assembly 51 is connected to a top end of the wafer picking and lifting mechanism 5; a plurality of wafer ejector pins 52 are provided on the wafer lifting tray assembly 51, and the wafer lifting tray assembly 51 is located at the lower part of the base 41 and the plurality of wafer ejector pins 52 pass through the body of the base 41; when the plurality of wafer ejector pins 52 move upward and protrude from the upper surface of the base 41, the top ends of the plurality of wafer ejector pins 52 contact with the lower surface of the incoming wafer, and are used to lift the incoming wafer so that it is separated from the external conveying device; when the plurality of wafer ejector pins 52 move downward and fall to the base When the wafer is below the upper surface of 41, the wafer is dropped onto the base 41, and the base 41 receives the wafer; the wafer lifting tray assembly 51 is capable of moving up and down, firstly the wafer is transported to the base 41 by the wafer hand lifting mechanism 5, and the wafer hand lifting mechanism 5 is lowered to the point where it does not affect the movement of the wafer tray lifting mechanism 4, at the same time, the wafer tray lifting mechanism 4 is also a lifting mechanism, which can make the carried wafer perform any lifting movement, and cooperate with the wafer lifting tray assembly 51, which can greatly increase the movement stroke of the wafer to be suitable for cleaning of various wafers, an upper RF assembly 6 is provided above the cavity 1, a lower RF assembly 9 is provided at the lower part of the upper RF assembly 6, the lower RF emission surface of the lower RF assembly 9 is the upper surface of the base 41, the inert gas in the cavity 1 is converted into ions by the upper RF assembly 6 and the lower RF assembly 9, and then the impurities and compounds on the surface of the wafer are cleaned by ion bombardment of the wafer to achieve a pre-cleaning effect.

[0044] A lower radio frequency generating device 7 is disposed on one side below the bottom plate 11 . The generating device 7 is electrically connected to the lower radio frequency component 9 to provide electrical energy to the lower radio frequency component 9 .

[0045] The cavity 1 is a hollow cavity 1 surrounded by a shell. A wafer delivery port 12 is provided on one side of the cavity 1 , and a connection port 13 is provided on the other side for connecting a molecular pump 8 to evacuate the cavity 1 through the molecular pump 8 .

[0046] A transfer flange 81 is provided between the molecular pump 8 and the connection port 13 , and an environmental capacitance diaphragm vacuum gauge 82 is provided on the transfer flange 81 for detecting the vacuum degree in the cavity 1 .

[0047] The top of the cavity 1 is provided with multiple circles of grooves, which include a first groove 16, a second groove 17, and a third groove 18 from the inner circle to the outer circle. The first groove 16 is used to connect the anti-smear shield 2, the second groove 17 is used to connect the quartz cover 3, and the third groove 18 is used to connect the upper RF component 6.

[0048] The anti-fouling shield 2 is placed in the cavity 1. The anti-fouling shield 2 is a hollow annular structure. The anti-fouling shield 2 includes an upper edge 21 and a lower edge 22. The upper edge 21 is bent outward and connected to the first groove 16 through a sealing ring. The lower edge 22 of the anti-fouling shield 2 is bent toward the base 41. The lower edge 22 of the anti-fouling shield 2 is located on the upper part of the base 41. The wafer is located in the hollow structure of the anti-fouling shield 2, and the anti-fouling shield 2 is used to block impurities from falling on the wafer after cleaning.

[0049] The quartz cover 3 is placed in the upper RF component 6, the bottom edge of the quartz cover 3 is connected to the second groove 17, and a sealing ring is provided at the connection between the bottom edge of the quartz cover 3 and the second groove 17. The quartz cover 3 cooperates with the lower RF component 9 so that the inert gas it transports is ionized, thereby cleaning the wafer.

[0050] The wafer tray lifting mechanism 4 includes a cylinder 44, a spindle sleeve 45, a radio frequency spindle 46, a bellows 48 and a base 41. The top of the spindle sleeve 45 is extended outwardly with a connecting plate 451, which is connected to the first through hole 14 through the connecting plate 451. The bottom of the spindle sleeve 45 is provided with a cylinder 44, and the spindle sleeve 45 is provided with a radio frequency spindle 46. The bellows 48 is sleeved outside the radio frequency spindle 46, and the base 41 is provided on the top of the radio frequency spindle 46. The bottom of the bellows 48 is fixedly connected to the connecting plate 451, and the top of the bellows 48 is fixedly connected to the bottom of the base 41. The bellows 48 is used to achieve sealing in the cavity 1.

[0051] An insulator 42 is sleeved on the outer edge of the base 41 , and a base protective cover 43 is provided at the connection between the insulator 42 and the RF main shaft 46 .

[0052] The RF spindle 46 is also provided with a travel switch 47 for controlling the lifting of the cylinder 44 .

[0053] The RF main shaft 46 is a hollow structure, which is used to transmit the connection line between the lower RF generating device 7 and the lower RF component 9 to achieve sealing.

[0054] The upper RF component 6 includes an RF cover 61, the bottom edge of which is snap-fitted to the third groove 18. The RF cover 61 protects the process from being affected by the magnetic field generated by the adjacent PVD chamber, thereby improving the uniformity of the process. A sealing ring and a conductive mesh are provided at the snap-fitting position, and the conductive mesh is used to obtain an equipotential.

[0055] A copper coil 62 is provided on the inner wall of the RF cover 61 near the lower ring for supplying low-frequency power. By increasing the power of the copper coil 62 , the density of the plasma in the RF cover 61 increases.

[0056] The outer wall of the RF cover 61 is provided with a side contact block 63 and an upper contact block 64 for detecting whether the RF cover 61 is installed on the cavity 1.

[0057] The beneficial effects of the present invention include: comprising a cavity 1, a bottom plate 11 is provided at the bottom of the cavity 1, a first through hole 14 is provided on the bottom plate 11, a wafer tray lifting mechanism 4 is connected to a base 41 through the first through hole 14, a second through hole 15 is further provided on the bottom plate 11, a wafer hand lifting mechanism 5 is connected through the second through hole 15, a wafer lifting tray assembly 51 is connected to the top end of the wafer hand lifting mechanism 5, a plurality of wafer ejector pins 52 are provided on the wafer lifting tray assembly 51, the wafer lifting tray assembly 51 is located at the lower part of the base 41 and the plurality of wafer ejector pins 52 pass through the body of the base 41, when the plurality of wafer ejector pins 52 move upward and protrude from the upper surface of the base 41, the top ends of the plurality of wafer ejector pins 52 contact with the lower surface of the incoming wafer, and are used to lift the incoming wafer so that it is separated from the external conveying device, when the plurality of wafer ejector pins 52 move downward and fall to the upper surface of the base 41 When the wafer is in the following position, the wafer is dropped onto the base 41, and the base 41 receives the wafer; the wafer lifting tray assembly 51 is capable of moving up and down, firstly the wafer is transported to the base 41 by the wafer hand lifting mechanism 5, and the wafer hand lifting mechanism 5 is lowered to a level that does not affect the movement of the wafer tray lifting mechanism 4, at the same time, the wafer tray lifting mechanism 4 is also a lifting mechanism, which can make the carried wafer perform any lifting movement, and cooperate with the wafer lifting tray assembly 51, which can greatly increase the movement stroke of the wafer to be suitable for cleaning of various wafers, an upper RF assembly 6 is provided above the chamber 1, a lower RF assembly 9 is provided at the lower part of the upper RF assembly 6, and the lower RF emitting surface of the lower RF assembly 9 is the upper surface of the base 41, the inert gas in the chamber 1 is converted into ions by the upper RF assembly 6 and the lower RF assembly 9, and then the impurities and compounds on the surface of the wafer are cleaned by ion bombardment of the wafer to achieve a pre-cleaning effect.

[0058] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A pre-cleaning device for a sputtering coating machine, comprising a chamber (1), wherein a bottom plate (11) is provided at the bottom of the chamber (1), and characterized in that: The bottom plate (11) is provided with a first through hole (14), and the wafer tray lifting mechanism (4) is connected to the base (41) through the first through hole (14). The bottom plate (11) is also provided with a second through hole (15), and the wafer hand lifting mechanism (5) is connected through the second through hole (15). The top end of the wafer hand lifting mechanism (5) is connected to a wafer lifting tray assembly (51), and the wafer lifting tray assembly (51) is provided with a plurality of wafer ejector pins (52). The wafer lifting tray assembly (51) is located at the lower part of the base (41) and the plurality of wafer ejector pins (52) pass through the body of the base (41). When the plurality of wafer ejector pins (52) move upward and protrude from the upper surface of the base (41), the plurality of wafer ejector pins (52) The top of the wafer ejector pins (52) contacts the lower surface of the incoming wafer and is used to lift the incoming wafer so that it is separated from the external conveying device. When the plurality of wafer ejector pins (52) move downward and fall to a position below the upper surface of the base (41), the wafer is dropped onto the base (41), and the base (41) receives the wafer. An upper radio frequency component (6) is provided above the cavity (1), and a lower radio frequency component (9) is provided below the upper radio frequency component (6). The lower radio frequency emission surface of the lower radio frequency component (9) is the upper surface of the base (41). The inert gas in the cavity (1) is converted into ions by the upper radio frequency component (6) and the lower radio frequency component (9), and then the impurities and compounds on the surface of the wafer are cleaned by ion bombardment of the wafer to achieve a pre-cleaning effect.

2. The pre-cleaning device for a sputtering coating machine as claimed in claim 1, characterized in that: A lower radio frequency generating device (7) is provided on one side below the bottom plate (11); the generating device (7) is electrically connected to the lower radio frequency component (9) to provide electrical energy for the lower radio frequency component (9).

3. The pre-cleaning device for a sputtering coating machine as claimed in claim 1, characterized in that: The cavity (1) is a hollow cavity (1) surrounded by an outer shell, one side of the cavity (1) is provided with a wafer conveying port (12), and the other side is provided with a connecting port (13) for connecting a molecular pump (8) to evacuate the cavity (1) through the molecular pump (8).

4. The pre-cleaning device for a sputtering coating machine as claimed in claim 3, characterized in that: A transfer flange (81) is provided between the molecular pump (8) and the connection port (13), and an environmental capacitance diaphragm vacuum gauge (82) is provided on the transfer flange (81) for detecting the vacuum degree in the cavity (1).

5. The pre-cleaning device for a sputtering coating machine as claimed in claim 1, characterized in that: The top of the cavity (1) is provided with a plurality of circles of grooves, the plurality of circles of grooves including, from the inner circle to the outer circle, a first groove (16), a second groove (17), and a third groove (18), the first groove (16) being used to connect to the anti-fog shield (2), the second groove (17) being used to connect to the quartz cover (3), and the third groove (18) being used to connect to the upper radio frequency component (6).

6. The pre-cleaning device for a sputtering coating machine as claimed in claim 5, characterized in that: The anti-fog shield (2) is placed in the cavity (1), the anti-fog shield (2) is a hollow annular structure, the anti-fog shield (2) comprises an upper edge (21) and a lower edge (22), the upper edge (21) is bent outward and connected to the first groove (16) through a sealing ring, the lower edge (22) of the anti-fog shield (2) is bent toward the base (41), the lower edge (22) of the anti-fog shield (2) is located on the upper part of the base (41), the wafer is located in the hollow structure of the anti-fog shield (2), and the anti-fog shield (2) prevents impurities from falling onto the wafer after cleaning.

7. The pre-cleaning device for a sputtering coating machine as claimed in claim 5, characterized in that: The quartz cover (3) is placed in the upper radio frequency component (6), the bottom edge of the quartz cover (3) is connected to the second groove (17), a sealing ring is provided at the connection between the bottom edge of the quartz cover (3) and the second groove (17), and the quartz cover (3) cooperates with the lower radio frequency component (9) so that the inert gas transported by it is ionized, thereby cleaning the wafer.

8. The pre-cleaning device for a sputtering coating machine as claimed in claim 1, characterized in that: The wafer tray lifting mechanism (4) comprises a cylinder (44), a spindle sleeve (45), a radio frequency spindle (46), a bellows (48) and a base (41); a connecting plate (451) is provided on the top of the spindle sleeve (45) and extends outward, and is connected to the first through hole (14) via the connecting plate (451); a cylinder (44) is provided at the bottom of the spindle sleeve (45); a radio frequency spindle (46) is provided inside the spindle sleeve (45); the bellows (48) is sleeved outside the radio frequency spindle (46); the base (41) is provided at the top of the radio frequency spindle (46); the bottom of the bellows (48) is fixedly connected to the connecting plate (451); the top of the bellows (48) is fixedly connected to the bottom of the base (41); and the bellows (48) is used to seal the cavity (1).

9. The pre-cleaning device for a sputtering coating machine as claimed in claim 1, characterized in that: An insulator (42) is sleeved on the outer edge of the base (41), and a base protective cover (43) is provided at the connection between the insulator (42) and the radio frequency main shaft (46).

10. The pre-cleaning device for a sputtering coating machine according to claim 1, characterized in that: The upper radio frequency component (6) comprises a radio frequency cover (61), the bottom edge of the radio frequency cover (61) being snap-fitted to the third groove (18), and a sealing ring and a conductive mesh strip are provided at the snap-fitting position.

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