Processing method, processing device, manufacturing system, apparatus, medium, and program

Abstract

The embodiment of the present disclosure provides a processing method, a processing device, a manufacturing system, equipment, a medium and a program. The processing method comprises the following steps: obtaining configuration information of a plurality of transmission nodes, wherein the plurality of transmission nodes are configured between a position where a wafer is located and a target position, the wafer has different height differences between the wafer and the target position when the wafer is located at different transmission nodes; in response to the obtained processing instruction, the wafer is controlled to move according to a transmission path corresponding to the plurality of transmission nodes according to the configuration information, so as to change the distance between the wafer and the target position; wherein when the wafer passes through any transmission node in the plurality of transmission nodes, the transmission rate of the wafer reaches a minimum; when it is monitored that the wafer reaches the target position, a processing control signal corresponding to the processing instruction is generated to process the wafer. By using the above technical solution, the stability of the wafer during movement can be improved, and the processing quality of the wafer is improved.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing technology, and in particular to a processing method, processing apparatus, manufacturing system, equipment, medium, and program. Background Technology

[0002] In the semiconductor manufacturing process, after the wafer is transferred to the process chamber, it needs to be placed on the work platform in the process chamber to perform corresponding processing (such as vapor deposition).

[0003] Currently, wafers are placed on a work platform using a lifting assembly. However, during the process of placing the wafer on the work platform, relative movement occurs between the wafer and the lifting assembly, causing the wafer's position on the lifting assembly to shift. This results in a shift in the wafer's position on the work platform, thereby reducing the wafer's processing quality.

[0004] Against this backdrop, how to provide technical solutions to improve the stability of wafer movement has become a technical problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0005] In view of this, the present disclosure provides a processing method, processing apparatus, manufacturing system, equipment, medium, and program that can improve the stability of the wafer during the wafer movement process, thereby improving the wafer processing quality.

[0006] This disclosure provides a processing method, including:

[0007] The configuration information of multiple transmission nodes is obtained, wherein the multiple transmission nodes are configured between the wafer location and the target location, and the wafer is located at different transmission nodes, and the wafer and the target location have different height differences.

[0008] In response to the acquired processing instructions, and based on the configuration information, the wafer is controlled to move along a transmission path corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position; wherein, when the wafer passes through any of the plurality of transmission nodes, the transmission rate of the wafer reaches a minimum.

[0009] When the wafer is detected to have reached the target position, a processing control signal corresponding to the processing command is generated to process the wafer.

[0010] Optionally, responding to the acquired processing instructions and controlling the wafer to move along a transmission path corresponding to the plurality of transmission nodes according to the configuration information, so as to change the distance between the wafer and the target position, includes:

[0011] In response to the acquired processing instructions, and based on the configuration information, the wafer is controlled to move between multiple transmission nodes according to the transmission path until the distance between the wafer and the target position is the target distance; wherein, when the wafer moves to a transmission node, it stops for a preset stop time before continuing to move to the next transmission node, and the preset stop time of the wafer at each transmission node is different.

[0012] Optionally, responding to the acquired processing instructions and controlling the wafer to move between the plurality of transmission nodes according to the transmission path based on the configuration information includes:

[0013] In response to the acquired processing instructions, and based on the configuration information, the wafer is controlled to move along the transmission path to any one of the multiple transmission nodes;

[0014] When it is determined that the wafer has reached any one of the plurality of transmission nodes, a first control signal is generated to stop driving the wafer's movement.

[0015] When the stopping time of the wafer reaches the preset stopping time corresponding to the transmission node, a second control signal is generated to drive the wafer to move to the next transmission node along the transmission path until the distance between the wafer and the target position is the target distance.

[0016] Optionally, the preset stop time of the wafer at a transmission node is negatively correlated with the distance between the transmission node and the target location.

[0017] Optionally, the height difference between the wafer location and the first transmission node among the plurality of transmission nodes, the height difference between any two adjacent transmission nodes among the plurality of transmission nodes, and the height difference between the last transmission node among the plurality of transmission nodes and the target location are the same.

[0018] Optionally, the processing instructions include: a preheating instruction;

[0019] The processing method further includes:

[0020] During the process of controlling the wafer to move along the transmission path corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position, a heating control signal is generated in response to the preheating command in the processing command. The heating control signal is used to control the heating of the surface of the wafer close to the target position.

[0021] Optionally, the processing instructions include: a pressure application instruction;

[0022] The processing method further includes:

[0023] In the process of controlling the wafer to move along the transmission path corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position, a pressurization control signal is generated in response to the pressurization command in the processing command to control the pressurization of the chamber where the wafer is located.

[0024] This disclosure also provides a processing apparatus, including:

[0025] A configuration unit is adapted to configure configuration information for multiple transmission nodes, wherein the multiple transmission nodes are configured between the wafer location and the target location, and the wafer is located at different transmission nodes, and the wafer and the target location have different height differences.

[0026] The processing unit is adapted to respond to the acquired processing instructions and, according to the configuration information, control the wafer to move along a transmission path corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position; wherein the transmission rate of the wafer reaches a minimum when the wafer passes through any of the plurality of transmission nodes; and, when the wafer is detected to have reached the target position, generate a processing control signal corresponding to the processing instructions to process the wafer.

[0027] Optionally, the processing instructions include: a preheating instruction;

[0028] The processing unit is also adapted to generate a heating control signal in response to a preheating command in the processing command;

[0029] The processing apparatus further includes a preheating unit, which is adapted to heat the surface of the wafer near the target position in response to the heating control signal during the process in which the processing unit controls the wafer to move along a transmission path corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position.

[0030] Optionally, the processing instructions include: a pressure application instruction;

[0031] The processing unit is also adapted to generate a pressure control signal in response to a pressure command in the processing command;

[0032] The processing apparatus further includes a pressurizing unit, which is adapted to pressurize the chamber where the wafer is located in response to a pressurizing command in the processing command during the process in which the processing unit controls the wafer to move along a transmission path corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position.

[0033] Accordingly, this disclosure also provides a manufacturing system, including:

[0034] The processing apparatus as described in any of the foregoing embodiments;

[0035] A processing device for processing wafers connected to the processing apparatus.

[0036] This disclosure also provides a data processing device, including a memory and a processor, wherein the memory is adapted to store one or more computer instructions, and the processor executes the processing method described in any of the foregoing embodiments when running the computer instructions.

[0037] This disclosure also provides a computer-readable storage medium storing computer instructions, which, when executed, perform the processing method described in any of the foregoing embodiments.

[0038] This disclosure also provides a computer program product, including computer instructions, which, when executed by a processor, implement the processing method described in any of the foregoing embodiments.

[0039] The processing method provided in this disclosure involves multiple transmission nodes configured between the wafer's current location and the target location. The wafer has different height differences with respect to different transmission nodes. In response to a received processing command, the wafer can be controlled to move along a transmission path corresponding to each transmission node, thereby changing the distance between the wafer and the target location. During wafer transmission, by minimizing the wafer's transmission rate when it passes through any of the multiple transmission nodes, a step-by-step transmission method can be used to place the wafer at the target location. This reduces wafer offset caused by the air cushion effect, thus improving the stability of the wafer's movement. When the wafer reaches the target location, a processing control signal can be generated to execute the processing steps. Since the wafer has not shifted, the processing quality of the wafer can be improved. Attached Figure Description

[0040] To more clearly illustrate the technical solutions of the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments of this disclosure or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 A flowchart of a processing method according to an embodiment of the present disclosure is shown;

[0042] Figures 2 to 4 A schematic diagram illustrating the principle of a wafer transfer process according to an embodiment of this disclosure is shown;

[0043] Figure 5 A schematic diagram of a processing apparatus according to an embodiment of the present disclosure is shown. Detailed Implementation

[0044] As described in the background section, when a wafer is placed on a work platform, its position on the work platform will shift because:

[0045] When the lifting assembly receives the wafer, it uses a single descent process to directly place the wafer onto the work platform. However, the contact area between the lifting assembly and the wafer contains gas. During the descent of the wafer by the lifting assembly, an air cushion effect (i.e., the upward force experienced by an object suspended or moving above a low-pressure gas layer) is generated between the wafer and the lifting assembly. This causes the wafer's position on the lifting assembly to shift, and consequently, its position on the work platform will also shift. As a result, during the deposition process, the thickness of the dielectric layer deposited at different locations on the wafer surface will vary.

[0046] To address the aforementioned technical problems, this disclosure provides a processing method. By configuring multiple transmission nodes between the wafer's current location and a target location, and causing the wafer to move along transmission paths corresponding to these nodes, the transmission rate of the wafer is minimized when it passes through any of the transmission nodes during the process of changing the distance between the wafer and the target location. This step-by-step, progressive transmission method places the wafer at the target location, reducing wafer misalignment caused by the air cushion effect and thus improving the stability of the wafer's movement. When the wafer reaches the target location, a processing control signal is generated to execute the processing steps. Since the wafer has not shifted, the processing quality of the wafer is improved.

[0047] To enable those skilled in the art to better understand the inventive concept, working principle and advantages of the embodiments of this disclosure, the processing schemes in the embodiments of this disclosure are described in detail below.

[0048] See Figures 1 to 4 ,in, Figure 1 This is a flowchart of a processing method according to an embodiment of the present disclosure. Figures 2 to 4 This is a schematic diagram illustrating the principle of a wafer transfer process in an embodiment of this disclosure.

[0049] In some embodiments of this disclosure, see Figures 1 to 4 Specifically, the wafer can be transferred to the target location by following these steps:

[0050] S11, obtain configuration information of multiple transmission nodes.

[0051] Specifically, the transmission path and distance for a wafer differ depending on the specific process being performed. Therefore, multiple transmission nodes can be configured based on the current process being performed on the wafer.

[0052] In some examples, the configuration information may include the number of transmission nodes, the distance between adjacent transmission nodes, the path between adjacent transmission nodes, and the location of each transmission node.

[0053] In some examples, multiple transmission nodes and their configuration information can be configured based on the distance and path to be transmitted from the wafer.

[0054] In some optional examples, multiple transmission nodes and their configuration information can be configured through at least one of manual or machine configuration methods.

[0055] In some examples, to improve the accuracy and continuity of the performed transmission steps, such as Figures 2 to 4 As shown, the characteristics of multiple transmission nodes can be further configured.

[0056] For example, multiple transmission nodes ( Figures 2 to 4 (Not shown) can be configured between location A of wafer 10 and target location B, so that wafer 10 can be correctly transferred to target location B.

[0057] In some embodiments of this disclosure, target location B may refer to the location of the plane of the work platform 30 (e.g., heater).

[0058] In some examples, location A of wafer 10 can be the first transmission node, and destination location B can be the last transmission node.

[0059] For example, when wafer 10 is at different transmission nodes, there are different height differences between wafer 10 and target location B; as wafer 10 moves between multiple transmission nodes, wafer 10 gets closer and closer to target location B.

[0060] For example, such as Figure 2 As shown, when the lifting assembly 20 receives the wafer 10, the height difference between the wafer 10 and the target position B is h1; Figure 3 As shown, when wafer 10 is located between the initial position and the first transmission node, other transmission nodes, or adjacent transmission nodes, and between the last transmission node and the target position, the height difference between wafer 10 and the target position B decreases, for example, the height difference is h2; when wafer 10 is located in another position again, the height difference between wafer 10 and the target position B will decrease again, until... Figure 4 As shown, the height difference between wafer 10 and target position B is 0.

[0061] With the above configuration method, on the one hand, the location range of the wafer can be located according to the transmission node where the wafer is located; on the other hand, by configuring the configuration information of multiple transmission nodes, the wafer can be transmitted according to the set transmission path that matches multiple transmission nodes.

[0062] S12, in response to the acquired processing instructions, according to the configuration information, the wafer is controlled to move along the transmission path corresponding to the plurality of transmission nodes, so as to change the distance between the wafer and the target position.

[0063] Specifically, when a wafer processing step needs to be performed, based on the processing instructions obtained, the wafer can be driven to move along the transmission paths corresponding to multiple transmission nodes in sequence according to the configuration information, so that the wafer can be placed at the target location.

[0064] As an example, when the lifting assembly 20 receives the wafer 10, it can drive the wafer 10 to move along the transmission path corresponding to multiple transmission nodes in response to processing instructions and configuration information, thereby reducing the distance between the wafer 10 and the target position B.

[0065] For example, such as Figure 3 As shown, the initial height difference between wafer 10 and target position B is h1; when the lifting assembly 20 moves wafer 10 along the through-holes opened on the working platform 30, as it passes through each transmission node, as... Figure 3 As shown, the height difference between wafer 10 and target location B decreases, for example, the height difference is h2, that is, the distance between wafer 10 and target location B decreases; when the wafer is transmitted along each transmission node again, the distance between wafer 10 and target location B gradually decreases until it is as shown. Figure 4 As shown, the height difference between wafer 10 and target position B is 0, that is, wafer 10 is placed at target position B and the distance between them is 0.

[0066] Understandably, in some other examples, the lifting assembly 20 and the work platform 30 can move together simultaneously to reduce transmission time.

[0067] In some examples, the wafer's transmission rate reaches a minimum when it passes through any of the multiple transmission nodes. In a further alternative implementation, when the wafer reaches any transmission node, it can stop moving for a certain period of time before continuing to move to the next transmission node until the wafer reaches the target position.

[0068] S13, when the wafer is detected to have reached the target position, a processing control signal corresponding to the processing command is generated to process the wafer.

[0069] Specifically, by using steps S11 and S12, processing instructions can be output, and the wafer can be driven to move along the transmission path corresponding to multiple transmission nodes according to the configuration information. Since the wafer transmission process takes a certain amount of time, the position of the wafer can be monitored. When it is determined that the wafer has reached the target position, a processing control signal corresponding to the processing instructions is generated, thereby enabling the wafer to undergo processing (e.g., vapor deposition).

[0070] By employing the processing method provided in the above embodiments, the wafer is placed at the target position using a step-by-step transmission method, which can reduce the wafer offset problem caused by the air cushion effect. This improves the stability of the wafer movement process. Furthermore, when the wafer reaches the target position, a processing control signal for executing the processing steps can be generated. Since the wafer has not shifted, the processing quality of the wafer can be improved.

[0071] To enable those skilled in the art to better understand and implement the embodiments of this disclosure, the concepts, schemes, principles, and advantages of the embodiments of this disclosure are described in detail below with reference to the accompanying drawings and through specific application examples.

[0072] In actual transmission, the inventors further discovered that the reason for the wafer offset is that there is a lot of gas between the wafer and the lifting assembly. During the continuous movement of the wafer, the gas does not easily escape, and the air cushion effect between the wafer and the lifting assembly always exists, which leads to a large offset between the wafer and the lifting assembly.

[0073] In this situation, to reduce the impact of the cushion effect on the wafer, the distance between the wafer and the target location can be changed as follows:

[0074] In response to the acquired processing instructions, and based on the configuration information, the wafer is controlled to move between multiple transmission nodes along the transmission path until the distance between the wafer and the target position is the target distance. When the wafer moves to a transmission node, it stops for a preset stop time before continuing to move to the next transmission node.

[0075] In other words, when controlling the wafer to move along the transmission path corresponding to multiple transmission nodes, the distance between the wafer and the target position becomes smaller and smaller, and the wafer approaches the target position. During the transmission of the wafer, when the wafer moves to any of the transmission nodes, the wafer stops moving (i.e., the transmission rate is zero), thereby reducing the air cushion effect between the wafer and the lifting component.

[0076] When the wafer stops at one of the transmission nodes for a preset stop time, the wafer is driven to move along the transmission path again until the wafer is transmitted to the target location.

[0077] In some examples, the preset stop time for the wafer varies at each transmission node.

[0078] In this embodiment of the disclosure, the closer to the target location (e.g., the location of the heater), the better the preheating effect of the wafer, and the air cushion effect between the wafer and the lifting assembly still exists.

[0079] Based on this, in some examples, the preset stop time of the wafer at a transmission node is negatively correlated with the distance between the transmission node and the target position. That is, the closer the wafer is to the target position, the longer the preset stop time of the wafer at the transmission node. In this way, by increasing the wafer's preheating time, the processing quality is improved; and by increasing the preset stop time of the wafer at the transmission node, more gas can be expelled, thereby further reducing the air cushion effect between the wafer and the lifting assembly, and improving the stability of the wafer during transmission. As an optional example, if the example of this disclosure has 6 transmission nodes n1 to n6, and the distance between any of these 6 transmission nodes n1 to n6 and the target position is different, and the distance between the 6 transmission nodes and the target position decreases; accordingly, the preset stop time of the 6 transmission nodes can increase. For example, when a wafer reaches transmission node n1, the preset stop time can be 3 seconds; when a wafer reaches transmission node n2, the preset stop time can be 4 seconds; when a wafer reaches transmission node n3, the preset stop time can be 5 seconds; when a wafer reaches transmission node n4, the preset stop time can be 6 seconds; when a wafer reaches transmission node n5, the preset stop time can be 7 seconds; and when a wafer reaches transmission node n6, the preset stop time can be 8 seconds.

[0080] In a specific example disclosed herein, the wafer transfer process can be controlled by determining whether the wafer has reached a transfer node and when a preset stop occurs at the transfer node.

[0081] Specifically, in response to the acquired processing instructions, and based on the configuration information, the wafer is controlled to move towards any one of the multiple transmission nodes; when it is determined that the wafer has reached any one of the multiple transmission nodes, a first control signal is generated to stop driving the wafer to move; when it is determined that the stopping time of the wafer has reached the preset stopping time corresponding to the current transmission node, a second control signal is generated to drive the wafer to move towards the next transmission node along the transmission path, until the distance between the wafer and the target position is the target distance.

[0082] In short, when transmitting the wafer according to the transmission path, once the wafer reaches the transmission node, the wafer movement is stopped. When the wafer stops at the transmission node for a preset duration, the wafer movement is resumed until the wafer is transmitted to the target location.

[0083] In some embodiments of this disclosure, when driving the wafer to move along the transmission path, the wafer moves the same distance within the selected movement range.

[0084] In some examples, the motion interval may include: the interval between the initial position of the wafer and the first transport node, the interval between any two adjacent transport nodes, and the interval between the last transport node and the target position.

[0085] That is, the height difference between the wafer location and the first transmission node among multiple transmission nodes, the height difference between any two adjacent transmission nodes among multiple transmission nodes, and the height difference between the last transmission node among multiple transmission nodes and the target location are the same. By making the height differences of the above three the same, the distance the wafer moves can be used to determine whether the wafer is on a transmission node. The determination method is simple.

[0086] In some examples, the distance traveled in any given motion zone can be 50 mil (1 mil is 2.54 e). -5 m).

[0087] It is understandable that when driving the wafer to move along the transmission path, the wafer's movement distance may vary within the selected movement range, or there may be movement ranges with different movement distances.

[0088] In some embodiments of this disclosure, when transmitting a wafer along a transmission path, the location of the wafer can be monitored, and different control logic can be executed on the wafer based on the monitoring results.

[0089] For example, if it is determined that the wafer has not reached the target position, the wafer transfer process continues.

[0090] For example, when it is determined that the wafer has reached the target position, a processing control signal is generated to perform the processing steps on the wafer.

[0091] In some processing steps, wafers are typically preheated when placed on the work platform to improve processing quality. For example, in deposition processes, preheating the wafer can improve the adhesion of the deposited film and reduce defects.

[0092] In some embodiments of this disclosure, the processing instructions may include a preheating instruction. Accordingly, during the process of controlling the wafer to move along a transmission path corresponding to multiple transmission nodes to change the distance between the wafer and the target position, a heating control signal is generated in response to the preheating instruction in the processing instructions. This heating control signal is used to control the heating of the surface of the wafer near the target position.

[0093] By heating the surface of the wafer near the target location, the temperature difference between the wafer and the work platform can be reduced, preventing wafer fragmentation due to large temperature differences; and the processing quality can be improved.

[0094] In some embodiments of this disclosure, the processing instructions may include a pressurization instruction. Accordingly, during the process of controlling the wafer to move along a transmission path corresponding to multiple transmission nodes to change the distance between the wafer and the target position, a pressurization control signal is generated in response to the pressurization instruction in the processing instructions to control the pressurization of the chamber where the wafer is located.

[0095] By pressurizing the chamber containing the wafer, the density of the gas inside the chamber can be increased, thereby enhancing the thermal conductivity of the gas and improving the preheating effect of the wafer.

[0096] It is understood that the above description provides multiple embodiment solutions, and the optional methods described in each embodiment solution can be combined and cross-referenced with each other without conflict, thereby extending to a variety of possible embodiment solutions, all of which can be considered as the embodiment solutions disclosed in this disclosure.

[0097] This disclosure also provides a processing apparatus corresponding to the processing method described in any of the above embodiments, which will be described below through specific examples. It should be noted that the content of the processing apparatus described below can be referred to in correspondence with the content of the processing method described above.

[0098] Reference Figure 5 The schematic diagram shown is of a processing apparatus according to an embodiment of this disclosure. In some embodiments of this disclosure, such as... Figure 5 As shown, the processing apparatus 100 may include:

[0099] Configuration unit 110 is adapted to configure configuration information of multiple transmission nodes, wherein the multiple transmission nodes are configured between the wafer location and the target location, and the wafer is located at different transmission nodes, and the wafer and the target location have different height differences.

[0100] The processing unit 120, in response to the acquired processing instruction, controls the wafer to move along a transmission path corresponding to the plurality of transmission nodes according to the configuration information, so as to change the distance between the wafer and the target position; wherein, when the wafer passes through any of the plurality of transmission nodes, the transmission rate of the wafer reaches a minimum; and, when the wafer is detected to have reached the target position, generates a processing control signal corresponding to the processing instruction to process the wafer.

[0101] Using the aforementioned processing apparatus 100, multiple transmission nodes are configured between the wafer's current location and the target location via the configuration unit 110. The processing unit 120 enables the wafer to move along transmission paths corresponding to these nodes. During the process of changing the distance between the wafer and the target location, the wafer's transmission rate is minimized when it passes through any of the multiple transmission nodes. This allows for a step-by-step, progressive transmission method to place the wafer at the target location, reducing wafer misalignment caused by the air cushion effect and thus improving the stability of the wafer's movement. When the wafer reaches the target location, a processing control signal is generated to execute the processing steps. Since the wafer has not shifted, the processing quality of the wafer is improved.

[0102] In some embodiments of this disclosure, the transmission path and transmission distance corresponding to the wafer are different when different processes are performed. Therefore, multiple transmission nodes corresponding to the current process being performed on the wafer can be configured.

[0103] In some examples, the configuration unit can configure multiple transmission nodes and their configuration information based on the distance and path to be transmitted from the wafer.

[0104] In some examples, the configuration information may include the number of transmission nodes, the distance between adjacent transmission nodes, the path between adjacent transmission nodes, and the location of each transmission node.

[0105] In some examples, to improve the accuracy and continuity of the performed transmission steps, such as Figures 2 to 4 As shown, the characteristics of multiple transmission nodes can be further configured.

[0106] For example, through the configuration unit, multiple transmission nodes can be configured between the location A of wafer 10 and the target location B, so that wafer 10 can be correctly transmitted to the target location B.

[0107] For example, through the configuration unit, location A of wafer 10 can be used as the first transmission node, and target location B can be used as the last transmission node.

[0108] For example, through the configuration unit, the wafer 10 can be positioned at different transmission nodes, so that the wafer 10 and the target position B have different height differences, that is, the wafer 10 gets closer and closer to the target position B.

[0109] With the above configuration method, on the one hand, the location range of the wafer can be located according to the transmission node where the wafer is located; on the other hand, by configuring the configuration information of multiple transmission nodes, the wafer can be transmitted according to the set transmission path that matches multiple transmission nodes.

[0110] In some examples disclosed herein, when a wafer processing step needs to be performed, the processing unit can sequentially drive the wafer to move along the transmission paths corresponding to multiple transmission nodes according to the obtained processing instructions and configuration information, thereby placing the wafer at the target location.

[0111] For example, combining Figures 2 to 5 When the lifting assembly 20 receives the wafer 10, it can drive the wafer 10 to move along the transmission path corresponding to multiple transmission nodes in response to processing instructions and configuration information, thereby reducing the distance between the wafer 10 and the target position B.

[0112] As an example, such as Figure 3 As shown, the initial height difference between wafer 10 and target position B is h1; when the lifting assembly 20 moves wafer 10 along the through-holes opened on the working platform 30, as it passes through each transmission node, as... Figure 3 As shown, the height difference between wafer 10 and target location B decreases, for example, the height difference is h2, that is, the distance between wafer 10 and target location B decreases; when the wafer is transmitted along each transmission node again, the distance between wafer 10 and target location B gradually decreases until it is as shown. Figure 4 As shown, the height difference between wafer 10 and target position B is 0, that is, wafer 10 is placed at target position B and the distance between them is 0.

[0113] In some examples, the processing unit may include a processor, and Figures 2 to 4 The diagram shows a work platform capable of processing wafers and a lifting device for lifting wafers.

[0114] In some examples, the wafer's transmission rate reaches a minimum when it passes through any of the multiple transmission nodes. In a further alternative implementation, when the wafer reaches any transmission node, it can stop moving for a certain period of time before continuing to move to the next transmission node until the wafer reaches the target position.

[0115] In some embodiments of this disclosure, when the wafer is driven to move along the transmission path corresponding to multiple transmission nodes, the transmission process of the wafer takes a certain amount of time. Therefore, the processing unit can monitor the position of the wafer and, when it determines that the wafer has reached the target position, generate a processing control signal corresponding to the processing instruction, thereby enabling the wafer to undergo processing (e.g., vapor deposition).

[0116] In actual transmission, the inventors further discovered that the reason for the wafer offset is that there is a lot of gas between the wafer and the lifting assembly. During the continuous movement of the wafer, the gas does not easily escape, and the air cushion effect between the wafer and the lifting assembly always exists, which leads to a large offset between the wafer and the lifting assembly.

[0117] In this case, to reduce the impact of the cushion effect on the wafer, the processing unit can change the distance between the wafer and the target location in the following way:

[0118] In response to the acquired processing instructions, and based on the configuration information, the wafer is controlled to move between multiple transmission nodes along the transmission path until the distance between the wafer and the target position is the target distance. When the wafer moves to a transmission node, it stops for a preset stop time before continuing to move to the next transmission node.

[0119] That is, when controlling the wafer to move along the transmission path corresponding to multiple transmission nodes, the distance between the wafer and the target position becomes smaller and smaller, and the wafer approaches the target position. During the transmission of the wafer, when the wafer moves to any of the transmission nodes, the processing unit can output a control signal to stop the transmission of the wafer (i.e., the transmission rate is zero), thereby reducing the air cushion effect between the wafer and the lifting component.

[0120] When the wafer stops at one of the transmission nodes for a preset stop time, the processing unit drives the wafer to move along the transmission path again until the wafer is transmitted to the target location.

[0121] In some examples, the preset stop time for the wafer varies at each transmission node.

[0122] In this embodiment of the disclosure, the closer to the target location (e.g., the location of the heater), the better the preheating effect of the wafer, and the air cushion effect between the wafer and the lifting assembly still exists.

[0123] Based on this, in some examples, the preset stop time of the wafer at a transmission node is negatively correlated with the distance between the transmission node and the target position. That is, the closer the wafer is to the target position, the longer the preset stop time of the wafer at the transmission node. This improves processing quality by increasing the wafer's preheating time; and by increasing the preset stop time of the wafer at the transmission node, more gas can be expelled, further reducing the air cushion effect between the wafer and the lifting assembly, thereby improving the stability of the wafer during transmission.

[0124] In a specific example disclosed herein, the wafer transfer process can be controlled by determining whether the wafer has reached a transfer node and when a preset stop occurs at the transfer node.

[0125] Specifically, in response to the acquired processing instructions, the processing unit can control the wafer to move towards any one of the multiple transmission nodes according to the configuration information; when the processing unit determines that the wafer has reached any one of the multiple transmission nodes, it generates a first control signal to stop driving the wafer to move; when the processing unit determines that the stopping time of the wafer has reached the preset stopping time corresponding to the current transmission node, it generates a second control signal to drive the wafer to move towards the next transmission node along the transmission path, until the distance between the wafer and the target position is the target distance.

[0126] In short, when the wafer is being transported along the transmission path, the processing unit stops driving the wafer to move when it determines that the wafer has reached the transmission node. When the wafer stops at the transmission node for a preset stop time, the processing unit drives the wafer to move again until the wafer is transported to the target location.

[0127] In some embodiments of this disclosure, when driving the wafer to move along the transmission path, the wafer moves the same distance within the selected movement range.

[0128] In some examples, the motion interval may include: the interval between the initial position of the wafer and the first transport node, the interval between any two adjacent transport nodes, and the interval between the last transport node and the target position.

[0129] That is, the height difference between the wafer location and the first transmission node among multiple transmission nodes, the height difference between any two adjacent transmission nodes among multiple transmission nodes, and the height difference between the last transmission node among multiple transmission nodes and the target location are the same. By making the height differences of the above three the same, the distance the wafer moves can be used to determine whether the wafer is on a transmission node. The implementation method is simple.

[0130] It is understandable that when driving the wafer to move along the transmission path, the wafer's movement distance may be different or there may be movement intervals with different movement distances within the selected movement range.

[0131] In some embodiments of this disclosure, when the wafer is being transmitted along the transmission path, the processing unit can monitor the location of the wafer and execute different control logic on the wafer based on the monitoring results.

[0132] For example, if it is determined that the wafer has not reached the target position, the wafer transfer process continues.

[0133] For example, when it is determined that the wafer has reached the target position, a processing control signal is generated to perform the processing steps on the wafer.

[0134] In some processing steps, wafers are typically preheated when placed on the work platform to improve processing quality. For example, in deposition processes, preheating the wafer can improve the adhesion of the deposited film and reduce defects.

[0135] In some embodiments of this disclosure, the processing instructions may include a preheating instruction, and the processing unit is further adapted to generate a heating control signal in response to the preheating instruction in the processing instructions.

[0136] Accordingly, the preheating unit is adapted to heat the surface of the wafer near the target position in response to the heating control signal during the process in which the processing unit controls the wafer to move along a transmission path corresponding to multiple transmission nodes to change the distance between the wafer and the target position.

[0137] By heating the surface of the wafer near the target location, the temperature difference between the wafer and the work platform can be reduced, preventing wafer fragmentation due to large temperature differences; and the processing quality can be improved.

[0138] In some embodiments of this disclosure, the processing instruction may include a pressurization instruction, and the processing unit is further adapted to generate a pressurization control signal in response to the pressurization instruction in the processing instruction.

[0139] Accordingly, the processing apparatus also includes a pressurizing unit, which is adapted to pressurize the chamber where the wafer is located in response to a pressurizing command in the processing instructions during the process in which the processing unit controls the wafer to move along a transmission path corresponding to multiple transmission nodes to change the distance between the wafer and the target position.

[0140] By pressurizing the chamber containing the wafer, the density of the gas inside the chamber can be increased, thereby enhancing the thermal conductivity of the gas and improving the preheating effect of the wafer.

[0141] In some examples, the above-described processing apparatus can be applied to a wafer manufacturing system, with the manufacturing system controlling the wafer processing procedure.

[0142] This disclosure also provides a manufacturing system, which in some examples may include a processing apparatus of any of the foregoing embodiments, and a processing device for processing wafers connected to the processing apparatus.

[0143] The structure and working principle of the processing device can be found in the aforementioned example, and will not be elaborated further here.

[0144] This disclosure also provides a data processing device, which may include a memory and a processor. The memory and the processor can communicate with each other via a communication bus. The memory stores computer instructions that can be executed on the processor. When the processor executes the computer instructions, it can perform the processing method described in any of the above embodiments. For details, please refer to the above-mentioned related content, which will not be repeated here.

[0145] In specific implementations, the processor may include a central processing unit, a field-programmable gate array, etc.

[0146] The memory may include random access memory (RAM), read-only memory (ROM), non-volatile memory (NVM), etc.

[0147] In practice, computer instructions may include any suitable type of code implemented using any appropriate high-level, low-level, object-oriented, visual, compiled, and / or interpreted programming language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, etc.

[0148] In some examples, the data processing device may further include a display interface and a display connected via the display interface. The display interface can communicate with the memory and the processor via a communication bus. The display can display the results obtained by the processor executing the processing methods provided in the embodiments of this disclosure, such as the position of the wafer on the transport path.

[0149] In some examples, the data processing device may also include a data output interface that can communicate with the memory and processor via a communication bus to output various data during the wafer fabrication process.

[0150] This disclosure also provides a computer-readable storage medium storing computer instructions thereon, which, when executed, can perform the processing method described in any of the above embodiments of this disclosure. For details, please refer to the above-mentioned related content, which will not be repeated here.

[0151] The computer-readable storage medium may include any suitable type of memory cell, memory device, memory article, memory medium, storage device, storage article, storage medium and / or storage cell. Examples include memory, removable or non-removable media, erasable or non-erasable media, writable or rewritable media, digital or analog media, hard disk, floppy disk, optical disc read-only memory (CDROM), recordable optical disc (CD-R), rewritable optical disc (CD-RW), optical disc, magnetic media, magneto-optical media, removable memory cards or disks, various types of digital universal optical discs (DVDs), magnetic tape, cassette tape, etc.

[0152] Furthermore, computer instructions may include any suitable type of code implemented using any appropriate high-level, low-level, object-oriented, visual, compiled, and / or interpreted programming language, such as source code, compiled code, interpreted code, executable code, static code, dynamic code, encrypted code, etc.

[0153] The present invention also provides a computer program product, which may include computer instructions. When the computer instructions are executed by a processor, they implement the processing method described in any of the above embodiments of the present invention. For details, please refer to the above-mentioned related content, which will not be repeated here.

[0154] While the above disclosure is provided, the present invention is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A method of processing, characterized by, The method comprises: obtaining configuration information of a plurality of transfer nodes, wherein the plurality of transfer nodes are configured between a position of a wafer and a target position, and the wafer has different height differences with the target position when the wafer is at different transfer nodes; in response to the obtained processing instruction, controlling the wafer to move according to a transfer path corresponding to the plurality of transfer nodes to change the distance between the wafer and the target position; wherein the transfer rate of the wafer reaches a minimum when the wafer passes through any transfer node of the plurality of transfer nodes; when it is monitored that the wafer reaches the target position, a processing control signal corresponding to the processing instruction is generated to process the wafer.

2. The method of claim 1, wherein, The method comprises: in response to the obtained processing instruction, controlling the wafer to move according to the transfer path between the plurality of transfer nodes according to the configuration information until the distance between the wafer and the target position is a target distance; wherein the wafer stops for a preset stop duration before moving to the next transfer node when it moves to a transfer node, and the preset stop duration of the wafer at each transfer node is different.

3. The method of claim 2, wherein, The method comprises: in response to the obtained processing instruction, controlling the wafer to move according to the transfer path to any transfer node of the plurality of transfer nodes according to the configuration information; generating a first control signal for stopping driving the wafer to move when it is determined that the wafer reaches any transfer node of the plurality of transfer nodes; generating a second control signal for driving the wafer to move according to the transfer path to the next transfer node when it is determined that the stop duration of the wafer reaches the preset stop duration corresponding to the transfer node, until the distance between the wafer and the target position is a target distance.

4. The method of claim 2, wherein The preset stop duration of the wafer at a transfer node is negatively correlated with the distance between the transfer node and the target position.

5. The method of processing according to any one of claims 1-4, wherein, The height difference between the position of the wafer and the first transfer node of the plurality of transfer nodes, the height difference between any two adjacent transfer nodes of the plurality of transfer nodes, and the height difference between the last transfer node of the plurality of transfer nodes and the target position are the same.

6. The method of claim 1, wherein The processing instruction comprises a preheating instruction. The method further comprises: in response to the preheating instruction in the processing instruction, generating a heating control signal for controlling the surface of the wafer close to the target position to be heated during the process of controlling the wafer to move according to the transfer path corresponding to the plurality of transfer nodes to change the distance between the wafer and the target position.

7. The method of claim 1, wherein The processing instruction comprises a pressurizing instruction. The processing method further comprises: In the process of controlling the wafer to move along the transmission paths corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position, in response to the pressurization instruction in the processing instruction, a pressurization control signal for controlling pressurization of a chamber in which the wafer is located is generated.

8. A processing device, characterized by Comprise: The configuration unit is adapted to configure configuration information of a plurality of transmission nodes, wherein the plurality of transmission nodes are configured between a location where a wafer is located and a target position, and the wafer has different height differences with the target position when the wafer is located in different transmission nodes; The processing unit is adapted to, in response to the obtained processing instruction, control the wafer to move along transmission paths corresponding to the plurality of transmission nodes according to the configuration information, so as to change the distance between the wafer and the target position; wherein when the wafer passes through any transmission node of the plurality of transmission nodes, the transmission rate of the wafer reaches a minimum; and when it is monitored that the wafer reaches the target position, a processing control signal corresponding to the processing instruction is generated to process the wafer.

9. The process apparatus of claim 8, wherein, The processing instruction comprises a preheating instruction; The processing unit is further adapted to generate a heating control signal in response to the preheating instruction in the processing instruction; The processing device further comprises a preheating unit, and the preheating unit is adapted to, in the process of the processing unit controlling the wafer to move along the transmission paths corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position, heat a surface of the wafer close to the target position in response to the heating control signal.

10. The process apparatus of claim 8, wherein, The processing instruction comprises a pressurization instruction; The processing unit is further adapted to generate a pressurization control signal in response to the pressurization instruction in the processing instruction; The processing device further comprises a pressurization unit, and the pressurization unit is adapted to, in the process of the processing unit controlling the wafer to move along the transmission paths corresponding to the plurality of transmission nodes to change the distance between the wafer and the target position, pressurize a chamber in which the wafer is located in response to the pressurization instruction in the processing instruction.

11. A manufacturing system, characterized by, Comprise: The processing device according to any one of claims 8 to 10; A processing apparatus for processing a wafer connected to the processing device.

12. A data processing device, characterized by Comprise a memory and a processor, wherein the memory is adapted to store one or more computer instructions, and the processor executes the computer instructions to perform the processing method according to any one of claims 1 to 7.

13. A computer-readable storage medium, characterized in that, A computer instruction is stored, and the computer instruction is executed to perform the processing method according to any one of claims 1 to 7.

14. A computer program product, characterised in that, A computer instruction is stored, and the computer instruction is executed to perform the processing method according to any one of claims 1 to 7.

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