A semiconductor laser having a waveguide layer that suppresses thermal degradation

Abstract

The present invention discloses a semiconductor laser with a waveguide layer that suppresses thermal degradation, which sequentially includes a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper cladding layer from bottom to top. The lower waveguide layer is a lower oscillation threshold waveguide layer, and the lower oscillation threshold waveguide layer is any one or any combination of InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, and GaN / AlN superlattice, with a thickness of 5 to 1000 nm. The present invention reduces the scattering loss of the waveguide sidewall and the absorption loss of the quantum well of the laser, reduces the internal optical absorption loss of the laser, suppresses the thermal degradation caused by non-radiative recombination, reduces the threshold current of the laser, and improves the slope efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor optoelectronic devices, and particularly to a semiconductor laser having a waveguide layer for suppressing thermal degradation. Background Art

[0002] Lasers are widely used in the fields of laser display, laser television, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage, etc. There are many types of lasers and various classification methods. The main types include solid-state, gas, liquid, semiconductor, and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small volume, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization.

[0003] There are significant differences between lasers and nitride semiconductor light-emitting diodes. 1) Laser is generated by stimulated emission of carriers, with a relatively small spectral full width at half maximum, high brightness, and the output power of a single laser can be in the watt level, while nitride semiconductor light-emitting diodes are spontaneous emission, and the output power of a single light-emitting diode is in the milliwatt level. 2) The operating current density of lasers reaches KA / cm 2 , which is more than two orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more severe Auger recombination, stronger polarization effects, and more serious electron-hole mismatch, leading to a more serious efficiency droop effect. 3) Light-emitting diodes have spontaneous transition radiation, which is incoherent light that transitions from a high energy level to a low energy level without external influence, while lasers are stimulated transition radiation, and the induced photon energy should be equal to the energy difference between the electron transitions, generating completely identical coherent light of photons and induced photons. 4) The principles are different: light-emitting diodes generate radiative recombination luminescence when electrons and holes transition to the active layer or p-n junction under the action of an external voltage, while lasers require lasing conditions to be met before lasing. It is necessary to satisfy the carrier population inversion distribution in the active region, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, satisfies the threshold condition so that the gain is greater than the loss, and finally outputs laser light.

[0004] Nitride semiconductor lasers have the following problems: The impurity absorption loss of the optical waveguide of the laser is high, which causes an increase in internal optical loss, resulting in a decrease in the slope efficiency of the laser and an increase in the threshold current; the electrons and holes in the quantum well are severely asymmetric and mismatched, with electron leakage and carrier delocalization, and it is more difficult for holes to transport in the quantum well. The carrier injection is uneven and the gain is uneven, which broadens the gain spectrum of the laser and decreases the peak gain, leading to an increase in the threshold current of the laser; there are non-radiative recombination losses and free carrier absorption in the active region of violet lasers, generating a large amount of heat. If the laser has low thermal conductivity, poor heat dissipation, and poor temperature characteristics, it will exacerbate the thermal mismatch between semiconductor epitaxial layers, resulting in problems such as an increase in the threshold current, a decrease in the output optical power and slope efficiency. Summary of the Invention

[0005] The present invention provides a semiconductor laser with a waveguide layer that suppresses thermal degradation, which can improve the electron drift rate of the lower waveguide layer and the active layer, enhance the carrier filling efficiency of the stimulated emission energy band, reduce the scattering loss of the waveguide sidewall and the quantum well absorption loss of the laser, reduce the internal optical absorption loss of the laser, suppress the thermal degradation caused by non-radiative recombination, reduce the threshold current of the laser, and improve the slope efficiency.

[0006] A semiconductor laser with a waveguide layer that suppresses thermal degradation provided by the present invention includes, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper cladding layer. The lower waveguide layer is a lower oscillation threshold waveguide layer, and the lower oscillation threshold waveguide layer is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, and GaN / AlN superlattice, with a thickness of 5 - 1000 nm.

[0007] Preferably, the downward angle of the peak position of the saturated electron drift rate of the lower oscillation threshold waveguide layer in the direction of the lower cladding layer is α, the upward angle of the valley position of the absorption coefficient of the lower oscillation threshold waveguide layer in the direction of the lower cladding layer is β, the upward angle of the valley position of the polar optical phonon energy of the lower oscillation threshold waveguide layer in the direction of the lower cladding layer is γ, and the upward angle of the valley position of the transverse sound velocity of the lower oscillation threshold waveguide layer in the direction of the lower cladding layer is θ, where: 40° ≤ γ ≤ θ ≤ α ≤ β ≤ 90°.

[0008] Preferably, the upward angle of the valley position of the saturated electron drift rate of the lower oscillation threshold waveguide layer in the direction of the active layer is δ, the downward angle of the peak position of the absorption coefficient of the lower oscillation threshold waveguide layer in the direction of the active layer is σ, the downward angle of the peak position of the polar optical phonon energy of the lower oscillation threshold waveguide layer in the direction of the active layer is φ, and the downward angle of the peak position of the transverse sound velocity of the lower oscillation threshold waveguide layer in the direction of the active layer is ψ, where: 45° ≤ ψ ≤ φ ≤ δ ≤ σ ≤ 90°.

[0009] Preferably, the descending angle of the peak position of the saturated electron drift rate of the waveguide layer under the low oscillation threshold in the direction of the lower cladding layer, the ascending angle of the valley positions of the absorption coefficient, polar optical phonon energy, and transverse sound velocity of the waveguide layer under the low oscillation threshold in the direction of the lower cladding layer, the ascending angle of the valley position of the saturated electron drift rate of the waveguide layer under the low oscillation threshold in the direction of the active layer, and the descending angle of the peak positions of the absorption coefficient, polar optical phonon energy, and transverse sound velocity of the waveguide layer under the low oscillation threshold in the direction of the active layer have the following relationship: 40°≤γ≤ψ≤θ≤φ≤α≤δ≤β≤σ≤90°.

[0010] Preferably, the saturated electron drift rate distribution of the waveguide layer under the low oscillation threshold has a function y = e x / cosx curve distribution in the third quadrant.

[0011] Preferably, the polar optical phonon energy distribution of the waveguide layer under the low oscillation threshold has a function y = x / e x curve distribution; the absorption coefficient distribution of the waveguide layer under the low oscillation threshold has a function y = e x / x 2 curve distribution; the transverse sound velocity distribution of the waveguide layer under the low oscillation threshold has a function y = x / e x curve distribution.

[0012] Preferably, the upper waveguide layer is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, with a thickness of 5 - 1000 nm.

[0013] Preferably, the well layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 to 150 angstroms, and the barrier layer of the active layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 to 200 angstroms.

[0014] Preferably, the lower cladding layer, the electron blocking layer, and the upper cladding layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0015] Preferably, the substrate includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, sapphire / SiN x / SiO2 composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2, and LiGaO2 composite substrate.

[0016] Compared with the prior art, a semiconductor laser with a waveguide layer that suppresses thermal degradation provided by an embodiment of the present invention has the following beneficial effects: The present invention designs the change angles and distributions of the saturated electron drift rate and the absorption coefficient, improves the electron drift rates of the lower waveguide layer and the active layer, improves the carrier filling efficiency of the stimulated emission energy band, reduces the scattering loss of the waveguide sidewall and the quantum well absorption loss of the laser, reduces the internal optical absorption loss of the laser, suppresses the thermal degradation caused by non-radiative recombination, reduces the threshold current of the laser and improves the slope efficiency; At the same time, the present invention designs the change angles and distributions of the polar optical phonon energy and the transverse sound velocity, regulates the phonon transport and transmission of the laser, reduces the joule heat loss and the carrier absorption loss, reduces the junction temperature and the rising amplitude of the junction temperature of the laser, improves the thermal degradation, and further reduces the threshold current and improves the photoelectric conversion efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 FIG. is a schematic structural diagram of a semiconductor laser with a waveguide layer that suppresses thermal degradation according to an embodiment of the present invention;

[0018] Figure 2 FIG. is a SIMS secondary ion mass spectrometry diagram of the structure of a semiconductor laser with a waveguide layer that suppresses thermal degradation according to an embodiment of the present invention;

[0019] Figure 3 FIG. is a SIMS secondary ion mass spectrometry diagram of the structure of a semiconductor laser with a waveguide layer that suppresses thermal degradation according to an embodiment of the present invention;

[0020] Figure 4 FIG. is a TEM lens electron microscopy diagram of a semiconductor laser with a waveguide layer that suppresses thermal degradation according to an embodiment of the present invention;

[0021] Figure 5 FIG. is a TEM lens electron microscopy diagram (partial enlarged view) of a semiconductor laser with a waveguide layer that suppresses thermal degradation according to an embodiment of the present invention;

[0022] Figure 6 FIG. is a TEM lens electron microscopy diagram (partial enlarged view) of a semiconductor laser with a waveguide layer that suppresses thermal degradation according to an embodiment of the present invention;

[0023] Reference numerals: 100: substrate; 101: lower cladding layer; 102: lower waveguide layer; 103: active layer; 104: upper waveguide layer, 105: electron blocking layer, 106: upper cladding layer. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0024] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention.

[0025] To solve the above problems, the following specific embodiments will be used to introduce and explain in detail a semiconductor laser with a waveguide layer that suppresses thermal degradation provided by the embodiments of the present application.

[0026] Referring to Figures 1-6 , a semiconductor laser with a waveguide layer that suppresses thermal degradation provided by the present invention includes, from bottom to top, a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, an electron blocking layer 105, and an upper cladding layer 106. The lower waveguide layer 102 is a low oscillation threshold waveguide layer 102, and the low oscillation threshold waveguide layer 102 is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, with a thickness of 5 - 1000 nm.

[0027] In the present invention, as Figures 2-3 shown, the downward angle of the peak position of the saturated electron drift rate of the low oscillation threshold waveguide layer 102 in the direction of the lower cladding layer 101 is α, the upward angle of the valley position of the absorption coefficient of the low oscillation threshold waveguide layer 102 in the direction of the lower cladding layer 101 is β, the upward angle of the valley position of the polar optical phonon energy of the low oscillation threshold waveguide layer 102 in the direction of the lower cladding layer 101 is γ, and the upward angle of the valley position of the transverse sound velocity of the low oscillation threshold waveguide layer 102 in the direction of the lower cladding layer 101 is θ, where: 40° ≤ γ ≤ θ ≤ α ≤ β ≤ ≤ 90°.

[0028] In the present invention, the upward angle of the valley position of the saturated electron drift rate of the low oscillation threshold waveguide layer 102 in the direction of the active layer 103 is δ, the downward angle of the peak position of the absorption coefficient of the low oscillation threshold waveguide layer 102 in the direction of the active layer 103 is σ, the downward angle of the peak position of the polar optical phonon energy of the low oscillation threshold waveguide layer 102 in the direction of the active layer 103 is φ, and the downward angle of the peak position of the transverse sound velocity of the low oscillation threshold waveguide layer 102 in the direction of the active layer 103 is ψ, where: 45° ≤ ψ ≤ φ ≤ δ ≤ σ ≤ 90°.

[0029] In the present invention, the downward angle of the peak position of the saturated electron drift rate of the waveguide layer 102 under the low oscillation threshold in the direction of the cladding layer 101, the upward angle of the valley position of the absorption coefficient, the polar optical phonon energy, and the transverse sound velocity of the waveguide layer 102 under the low oscillation threshold in the direction of the cladding layer 101, the upward angle of the valley position of the saturated electron drift rate of the waveguide layer 102 in the direction of the active layer 103, and the downward angle of the peak position of the absorption coefficient, the polar optical phonon energy, and the transverse sound velocity of the waveguide layer 102 under the low oscillation threshold in the direction of the active layer 103 have the following relationship: 40° ≤ γ ≤ ψ ≤ θ ≤ φ ≤ α ≤ δ ≤ β ≤ σ ≤ 90°.

[0030] In the present invention, the saturated electron drift rate distribution of the waveguide layer 102 under the low oscillation threshold has a function y = e x / cosx curve distribution in the third quadrant. The polar optical phonon energy distribution of the waveguide layer 102 under the low oscillation threshold has a function y = x / e x curve distribution; the absorption coefficient distribution of the waveguide layer 102 under the low oscillation threshold has a function y = e x / x 2 curve distribution; the transverse sound velocity distribution of the waveguide layer 102 under the low oscillation threshold has a function y = x / e x curve distribution.

[0031] In summary, as Figures 4-6 shown, the present invention designs the change angles and distributions of the saturated electron drift rate and the absorption coefficient, improves the electron drift rate of the lower waveguide layer 102 and the active layer 103, improves the carrier filling efficiency of the stimulated radiation energy band, reduces the scattering loss of the laser waveguide sidewall and the quantum well absorption loss, reduces the internal optical absorption loss of the laser, suppresses the thermal decay caused by non-radiative recombination, reduces the threshold current of the laser and improves the slope efficiency; at the same time, the present invention designs the change angles and distributions of the polar optical phonon energy and the transverse sound velocity, regulates the phonon transport and transmission of the laser, reduces the joule heat loss and the carrier absorption loss, reduces the junction temperature of the laser and the rising amplitude of the junction temperature, improves the thermal decay, and further reduces the threshold current and improves the photoelectric conversion efficiency. As shown in the following table:

[0032]

[0033]

[0034] In the present invention, the upper waveguide layer 104 is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, with a thickness of 5 - 1000 nm.

[0035] In the present invention, the well layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 - 150 angstroms, and the barrier layer of the active layer 103 is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 - 200 angstroms.

[0036] In the present invention, the lower cladding layer 101, the electron blocking layer 105, and the upper cladding layer 106 are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

[0037] In the present invention, the substrate 100 includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , sapphire / SiO2 / SiN x composite substrate, sapphire / SiN x / SiO2 composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate

[0038] The above are only the preferred embodiments of the present invention. It should be noted that for those of ordinary skill in the art, without departing from the technical principle of the present invention, several improvements and deformations can be made, and these improvements and deformations should also be regarded as the protection scope of the present invention.

Claims

1. A semiconductor laser with a waveguide layer that suppresses thermal degradation, which sequentially includes a substrate (100), a lower cladding layer (101), a lower waveguide layer (102), an active layer (103), an upper waveguide layer (104), an electron blocking layer (105), and an upper cladding layer (106) from bottom to top. It is characterized in that, The lower waveguide layer (102) is a lower waveguide layer with a low oscillation threshold. The lower waveguide layer with a low oscillation threshold is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, and has a thickness of 5 - 1000 nm; The downward angle of the peak position of the saturated electron drift rate of the lower waveguide layer with a low oscillation threshold (102) in the direction of the lower cladding layer (101) is α. The upward angle of the valley position of the absorption coefficient of the lower waveguide layer with a low oscillation threshold (102) in the direction of the lower cladding layer (101) is β. The upward angle of the valley position of the polar optical phonon energy of the lower waveguide layer with a low oscillation threshold (102) in the direction of the lower cladding layer (101) is γ. The upward angle of the valley position of the transverse sound velocity of the lower waveguide layer with a low oscillation threshold (102) in the direction of the lower cladding layer (101) is θ, where: 40° ≤ γ ≤ θ ≤ α ≤ β ≤ 90°; The upward angle of the valley position of the saturated electron drift rate of the lower waveguide layer with a low oscillation threshold (102) in the direction of the active layer (103) is δ. The downward angle of the peak position of the absorption coefficient of the lower waveguide layer with a low oscillation threshold (102) in the direction of the active layer (103) is σ. The downward angle of the peak position of the polar optical phonon energy of the lower waveguide layer with a low oscillation threshold (102) in the direction of the active layer (103) is φ. The downward angle of the peak position of the transverse sound velocity of the lower waveguide layer with a low oscillation threshold (102) in the direction of the active layer (103) is ψ, where: 45° ≤ ψ ≤ φ ≤ δ ≤ σ ≤ 90°; The downward angle of the peak position of the saturated electron drift rate of the lower waveguide layer with a low oscillation threshold (102) in the direction of the lower cladding layer (101), the upward angles of the valley positions of the absorption coefficient, polar optical phonon energy, and transverse sound velocity of the lower waveguide layer with a low oscillation threshold (102) in the direction of the lower cladding layer (101), the upward angle of the valley position of the saturated electron drift rate of the lower waveguide layer with a low oscillation threshold (102) in the direction of the active layer (103), and the downward angles of the peak positions of the absorption coefficient, polar optical phonon energy, and transverse sound velocity of the lower waveguide layer with a low oscillation threshold (102) in the direction of the active layer (103) have the following relationship: 40° ≤ γ ≤ ψ ≤ θ ≤ φ ≤ α ≤ δ ≤ β ≤ σ ≤ 90°.

2. A semiconductor laser having a waveguide layer that suppresses thermal degradation according to claim 1, characterized in that, The saturated electron drift rate distribution of the waveguide layer (102) under the low oscillation threshold has a function y = e x / cosx third quadrant curve distribution.

3. A semiconductor laser having a waveguide layer that suppresses thermal degradation according to claim 1, characterized in that The polarization optical phonon energy distribution of the waveguide layer (102) under the low oscillation threshold has a function y = x / e x curve distribution; the absorption coefficient distribution of the waveguide layer (102) under the low oscillation threshold has a function y = e x / x 2 curve distribution; the transverse sound velocity distribution of the waveguide layer (102) under the low oscillation threshold has a function y = x / e x curve distribution.

4. A semiconductor laser having a waveguide layer that suppresses thermal degradation according to claim 1, characterized in that, The upper waveguide layer (104) is any one or any combination of InGaN, GaN, InN, AlInGaN, AlInN, AlN, InGaN / GaN superlattice, InGaN / AlGaN superlattice, InGaN / AlInGaN superlattice, InGaN / AlInN superlattice, GaN / AlGaN superlattice, GaN / AlInGaN superlattice, GaN / AlN superlattice, with a thickness of 5 - 1000 nm.

5. A semiconductor laser having a waveguide layer that suppresses thermal degradation according to claim 1, characterized in that The well layer of the active layer (103) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 - 150 angstroms, and the barrier layer of the active layer (103) is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond, with a thickness of 10 - 200 angstroms.

6. A semiconductor laser having a waveguide layer that suppresses thermal degradation according to claim 1, characterized in that, The lower cladding layer (101), the electron blocking layer (105), and the upper cladding layer (106) are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, diamond.

7. A semiconductor laser having a waveguide layer that suppresses thermal degradation according to claim 1, characterized in that, The substrate (100) includes any one of sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x composite substrate, sapphire / SiO2 / SiN x composite substrate, sapphire / SiN x / SiO2 composite substrate, magnesium aluminate spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate

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