Display panel and display device

Abstract

The invention discloses a display panel and a display device. The display panel comprises an active layer, a first gate insulating layer, a first gate and a second gate insulating layer. The first gate insulating layer covers the active layer; the first gate is arranged on one side, away from the active layer, of the first gate insulating layer; the second gate insulating layer is arranged on the side, away from the active layer, of the first gate insulating layer and covers the first gate, and the second gate insulating layer contains hydrogen elements; wherein the first gate insulating layer comprises a first sub-part located between the active layer and the first gate and a second sub-part connected to the first sub-part, and the thickness of the first sub-part is larger than that of the second sub-part; according to the display panel, hydrogen in the second gate insulating layer can be more easily diffused into the active layer through the second sub-part, the hydrogen supplementing capacity of the display panel on the active layer is improved, and the stability and the display effect of the display panel are improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] The thin film transistors in the display panel need to undergo hydrogenation treatment during production. Taking the array structure display panel using low-temperature polycrystalline silicon (LTPS) thin film transistors as an example, the polycrystalline silicon thin film transistors undergo hydrogenation treatment during production, which improves the electron mobility of the polycrystalline silicon thin film transistors, repairs defects, and makes the polycrystalline silicon thin film transistors have higher carrier mobility.

[0003] Currently, in a display panel, Gate1 and Gate2 are arranged above the active layer, and GI2 between Gate1 and Gate2 is generally made of silicon nitride. The hydrogen in GI2 is often replenished to the active layer below through a baking process. However, the current display panel has insufficient ability to replenish hydrogen to the active layer, and the thin-film transistors in the display panel are prone to problems such as excessive subthreshold swing and low mobility, which seriously affects the electrical properties of the thin-film transistors, and further affects the stability and display effect of the display panel. Summary of the invention

[0004] The embodiments of the present application provide a display panel and a display device, which can improve the hydrogen replenishment capability of the active layer in the display panel, thereby improving the stability and display effect of the display panel.

[0005] An embodiment of the present application provides a display panel, comprising:

[0006] Active layer;

[0007] a first gate insulating layer, covering the active layer;

[0008] A first gate, disposed on a side of the first gate insulating layer away from the active layer;

[0009] A second gate insulating layer, disposed on a side of the first gate insulating layer away from the active layer and covering the first gate, wherein the second gate insulating layer contains hydrogen elements;

[0010] The first gate insulating layer includes a first sub-portion located between the active layer and the first gate and a second sub-portion connected to the first sub-portion, and the thickness of the first sub-portion is greater than the thickness of the second sub-portion.

[0011] In an embodiment of the present application, an orthographic projection of the first gate on the second gate insulating layer and an orthographic projection of the second sub-portion on the second gate insulating layer are arranged not to overlap.

[0012] In one embodiment of the present application, the active layer includes a channel portion and a first doped portion and a second doped portion connected to opposite sides of the channel portion, the first gate is located on a side of the first gate insulating layer away from the channel portion, and the first sub-portion is located between the first gate and the channel portion.

[0013] In one embodiment of the present application, the orthographic projection of the second sub-portion on the second gate insulating layer overlaps with the orthographic projection of the first doped portion on the second gate insulating layer and the orthographic projection of the second doped portion on the second gate insulating layer, and the orthographic projection of the second sub-portion on the second gate insulating layer does not overlap with the orthographic projection of the channel portion on the second gate insulating layer.

[0014] In one embodiment of the present application, the thickness of the first sub-portion close to one end of the second sub-portion gradually decreases to form a first inclined surface, the second gate insulating layer covers the first inclined surface, and a first acute angle is formed between the first inclined surface and the active layer;

[0015] The first gate has a second inclined surface on the same side close to the first inclined surface, and a second included angle of an acute angle is formed between the second inclined surface and the active layer;

[0016] The difference between the first angle and the second angle is less than or equal to 20°.

[0017] In one embodiment of the present application, a difference between a thickness of the first sub-portion and a thickness of the second sub-portion is less than or equal to 80 nm.

[0018] In one embodiment of the present application, the thickness of the second sub-portion is greater than or equal to 50 nm and less than 130 nm.

[0019] In one embodiment of the present application, the display panel also includes a second gate arranged on a side of the second gate insulating layer away from the first gate, the second gate insulating layer includes a third sub-portion arranged between the first gate and the second gate and a fourth sub-portion connected to the third sub-portion, and the thickness of the third sub-portion is less than or equal to the thickness of the fourth sub-portion.

[0020] In one embodiment of the present application, the third sub-portion is located on a side of the first sub-portion away from the active layer, the fourth sub-portion is located on a side of the second sub-portion away from the active layer, and the thickness of the third sub-portion is less than the thickness of the fourth sub-portion.

[0021] In an embodiment of the present application, a surface of the third sub-portion away from the active layer is flush with a surface of the fourth sub-portion away from the active layer.

[0022] In one embodiment of the present application, the thickness of the third sub-portion is greater than or equal to 50 nm and less than 130 nm.

[0023] In an embodiment of the present application, the display panel further includes a driving circuit, the driving circuit includes a storage capacitor, and the storage capacitor includes the first gate and the second gate that are arranged opposite to each other.

[0024] In one embodiment of the present application, the display panel further comprises an interlayer dielectric layer disposed on a side of the second gate insulating layer away from the first gate insulating layer, the interlayer dielectric layer comprising at least one first sublayer and at least one second sublayer stacked;

[0025] The material of the first sub-layer includes at least one of silicon nitride and silicon oxynitride, the material of the second sub-layer includes silicon oxide, and the first sub-layer is in contact with the second gate insulating layer in the interlayer dielectric layer.

[0026] In an embodiment of the present application, a thickness of the first sub-layer in contact with the second gate insulating layer is greater than a thickness of the second sub-layer.

[0027] In one embodiment of the present application, the interlayer dielectric layer includes a plurality of the first sub-layers, and the thickness of the first sub-layer in contact with the second gate insulating layer is greater than the thickness of the other first sub-layers and the thickness of the second sub-layer.

[0028] In an embodiment of the present application, the material of the active layer includes low-temperature polysilicon, and the material of the second gate insulating layer includes at least one of silicon nitride and silicon oxynitride.

[0029] According to the above-mentioned purpose of the present application, an embodiment of the present application further provides a display device, which includes the display panel.

[0030] Beneficial effects of the present application: The present application differentiates the thickness of the first gate insulating layer so that the thickness of the first sub-portion located between the first gate and the active layer is greater than the thickness of the second sub-portion not corresponding to the first gate. On the basis of ensuring the insulation between the first gate and the active layer, hydrogen in the second gate insulating layer is more easily diffused into the active layer through the second sub-portion, thereby improving the hydrogen replenishment capacity of the active layer in the display panel and improving the stability and display effect of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0032] Figure 1A schematic diagram of a first structure of a display panel provided in an embodiment of the present application;

[0033] Figure 2 A second structural schematic diagram of a display panel provided in an embodiment of the present application;

[0034] Figure 3 A third structural schematic diagram of a display panel provided in an embodiment of the present application;

[0035] Figure 4 A fourth structural schematic diagram of a display panel provided in an embodiment of the present application;

[0036] Figure 5 A fifth structural schematic diagram of the display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0037] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0038] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the various specific processes and material examples provided by the present application, but those of ordinary skill in the art can appreciate the application of other processes and / or the use of other materials.

[0039] The present application embodiment provides a display panel. Figure 1 The display panel includes an active layer 10 , a first gate insulating layer 20 , a first gate 30 and a second gate insulating layer 40 .

[0040] Among them, the first gate insulating layer 20 covers the active layer 10; the first gate 30 is arranged on the side of the first gate insulating layer 20 away from the active layer 10; the second gate insulating layer 40 is arranged on the side of the first gate insulating layer 20 away from the active layer 10 and covers the first gate 30, and the second gate insulating layer 40 contains hydrogen elements.

[0041] Furthermore, the first gate insulating layer 20 includes a first sub-portion 21 located between the active layer 10 and the first gate 30 and a second sub-portion 22 connected to the first sub-portion 21 , and the thickness of the first sub-portion 21 is greater than that of the second sub-portion 22 .

[0042] During the implementation and application process, the embodiment of the present application differentiates the thickness of the first gate insulating layer 20 so that the thickness of the first sub-portion 21 located between the first gate 30 and the active layer 10 is greater than the thickness of the second sub-portion 22 not corresponding to the first gate 30. On the basis of ensuring the insulation between the first gate 30 and the active layer 10, the hydrogen in the second gate insulating layer 40 is more easily diffused into the active layer 10 through the second sub-portion 22, thereby improving the hydrogen replenishment capacity of the active layer 10 in the display panel and improving the stability and display effect of the display panel.

[0043] For details, please refer to Figure 1 In some embodiments of the present application, the display panel includes a buffer layer 71 , and the active layer 10 is disposed on the buffer layer 71 .

[0044] In some embodiments, the buffer layer 71 may include a stacked silicon nitride layer and a silicon oxide layer.

[0045] The first gate insulating layer 20 is disposed on the buffer layer 71 and covers the active layer 10 ; the first gate 30 is disposed on a side of the first gate insulating layer 20 away from the active layer 10 , and the second gate insulating layer 40 is disposed on a side of the first gate insulating layer 20 away from the active layer 10 and covers the first gate 30 .

[0046] In some embodiments, the material of the first gate insulating layer 20 may include silicon oxide, the material of the second gate insulating layer 40 may include at least one of silicon nitride and silicon oxynitride, or the material of the second gate insulating layer 40 may include other materials that can be used to replenish hydrogen, which is not limited here.

[0047] In some embodiments, the display panel also includes a second gate 50 arranged on a side of the second gate insulating layer 40 away from the first gate insulating layer 20, an interlayer dielectric layer 60 arranged on the second gate insulating layer 40 and covering the second gate 50, and a source 72 and a drain 73 arranged on the interlayer dielectric layer 60, the source 72 passes through the interlayer dielectric layer 60, the second gate insulating layer 40 and the first gate insulating layer 20 to be connected to the first doped portion 12, and the drain 73 passes through the interlayer dielectric layer 60, the second gate insulating layer 40 and the first gate insulating layer 20 to be connected to the second doped portion 13.

[0048] It can be understood that the active layer 10, the first gate 30, the second gate 50, the source 72 and the drain 73 can constitute a thin film transistor in the display panel, and the display panel includes a driving circuit, and the driving circuit includes the thin film transistor, and the thin film transistor can control the on and off of the signal in the driving circuit.

[0049] In some embodiments, the active layer 10 includes a channel portion 11 and a first doped portion 12 and a second doped portion 13 connected to opposite sides of the channel portion 11; the first gate 30 is located on a side of the first gate insulating layer 20 away from the channel portion 11; and the first gate 30 and the channel portion 11 are aligned along the thickness direction of the display panel.

[0050] In an embodiment of the present application, the first gate insulating layer 20 includes a first sub-portion 21 located between the first gate 30 and the active layer 10 and a second sub-portion 22 connected to the first sub-portion 21; further, the first sub-portion 21 is located between the first gate 30 and the channel portion 11, and the second sub-portion 22 covers an area outside the channel portion 11.

[0051] It can be understood that in the diagram provided in the embodiment of the present application, there is a vertical dotted line in the first gate insulating layer 20, and the dotted line is used to indicate the boundary line between the first sub-portion 21 and the second sub-portion 22 in the first gate insulating layer 20 in the corresponding embodiment. The dotted line is used to describe the structure of the first gate insulating layer 20 in the corresponding embodiment, and the dotted line does not exist in the product of the display panel.

[0052] In some embodiments, the orthographic projection of the first gate 30 on the second gate insulating layer 40 does not overlap with the orthographic projection of the second sub-portion 22 on the second gate insulating layer 40, and the orthographic projection of the first gate 30 on the second gate insulating layer 40 is located within the coverage range of the orthographic projection of the first sub-portion 21 on the second gate insulating layer 40.

[0053] Among them, the thickness of the first sub-portion 21 is greater than the thickness of the second sub-portion 22, that is, the embodiment of the present application can reduce the thickness of the second sub-portion 22, thereby reducing the distance between the second gate insulating layer 40 and the active layer 10, and then in the process of manufacturing the display panel, the hydrogen in the second gate insulating layer 40 can be more easily diffused into the active layer 10 during the baking process, thereby effectively improving the hydrogen replenishment capacity of the active layer 10 in the display panel.

[0054] It should be noted that, in the manufacturing process of the display panel, after the first gate 30 is formed, the first gate 30 can be used as a mask to etch the first gate insulating layer 20 outside the coverage of the first gate 30, so as to reduce the thickness of the first gate insulating layer 20 outside the coverage of the first gate 30, thereby forming the first sub-portion 21 and the second sub-portion 22 with different thicknesses. The second gate insulating layer 40 is dry-etched by CF4 and O2.

[0055] In some embodiments, the material of the active layer 10 may include low-temperature polysilicon, and the first doping portion 12 and the second doping portion 13 may be conductive portions formed by B-doping the low-temperature polysilicon material. Furthermore, the embodiments of the present application improve the hydrogen replenishment ability of the active layer 10, so that the dangling bonds in the a-Si in the active layer 10 can be combined with hydrogen to form stable Si-H bonds, which can effectively reduce the subthreshold swing of the thin film transistor, improve the mobility of the thin film transistor, and enhance the performance of the thin film transistor.

[0056] In some embodiments, the orthographic projection of the second sub-portion 22 on the second gate insulating layer 40 overlaps with the orthographic projection of the first doped portion 12 on the second gate insulating layer 40 and the orthographic projection of the second doped portion 13 on the second gate insulating layer 40, and the orthographic projection of the second sub-portion 22 on the second gate insulating layer 40 does not overlap with the orthographic projection of the channel portion 11 on the second gate insulating layer 40; the embodiment of the present application can reduce the thickness of the second sub-portion 22 and keep the thickness of the first sub-portion 21 unchanged by differentially setting the thickness of the first gate insulating layer 20, and on the basis of ensuring the insulation between the active layer 10 and the first gate 30, the hydrogen replenishment capacity of the active layer 10 in the display panel can be improved.

[0057] It should be noted that, since the second sub-section 22 is located above the first doping section 12 and the second doping section 13, the embodiment of the present application can also reduce the dose during the doping process of B in the first doping section 12 and the second doping section 13 in the active layer 10 and the energy required for the doping process, such as reducing the dopant dose and energy during ion bombardment.

[0058] In some embodiments, the thickness of the second sub-portion 22 is greater than or equal to 50 nm and less than 130 nm. For example, the thickness of the second sub-portion 22 may be 50 nm, 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 110 nm or 120 nm. The thickness of the first sub-portion 21 may be greater than or equal to 130 nm.

[0059] Furthermore, in some embodiments, the difference between the thickness of the first sub-portion 21 and the thickness of the second sub-portion 22 is less than or equal to 80 nm, so as to avoid a large step difference on the film surface of the first gate insulating layer 20 due to the differentiated setting of the thickness of the first gate insulating layer 20, thereby reducing the probability of subsequent film layers breaking due to the large step difference and improving the yield rate of the display panel.

[0060] In some embodiments, the thickness of the first sub-portion 21 at one end close to the second sub-portion 22 gradually decreases to form a first inclined surface 210, the second gate insulating layer 40 covers the first inclined surface 210, and a first acute angle a is formed between the first inclined surface 210 and the active layer 10; the first gate 30 has a second inclined surface 301 on the same side close to the first inclined surface 210, and a second acute angle b is formed between the second inclined surface 301 and the active layer 10; the difference between the first angle a and the second angle b is less than or equal to 20°; in the embodiment of the present application, the difference between the first angle a and the second angle b is limited, so as to avoid large fluctuations and changes in morphology of the second gate insulating layer 40 when covering the first inclined surface 210 and the second inclined surface 301, thereby improving the coverage uniformity and yield rate of the second gate insulating layer 40, and reducing the probability of the second gate insulating layer 40 and the interlayer dielectric layer 60 climbing and breaking due to excessive inclined surface slope.

[0061] In some embodiments, the first angle a is greater than the second angle b.

[0062] In some embodiments, the second gate insulating layer 40 includes a third sub-portion 41 disposed between the first gate 30 and the second gate 50 and a fourth sub-portion 42 connected to the third sub-portion 41, and the thickness of the third sub-portion 41 is less than or equal to the thickness of the fourth sub-portion 42; for example Figure 1In the illustrated embodiment, the thickness of the third sub-portion 41 may be equal to the thickness of the fourth sub-portion 42 .

[0063] It can be understood that in the diagram provided in the embodiment of the present application, there is a vertical dotted line in the second gate insulating layer 40, and the dotted line is used to indicate the boundary line between the third sub-portion 41 and the fourth sub-portion 42 in the second gate insulating layer 40 in the corresponding embodiment. The dotted line is used to describe the structure of the second gate insulating layer 40 in the corresponding embodiment, and the dotted line does not exist in the product of the display panel.

[0064] It should be noted that, since the thickness of the second sub-portion 22 in the first gate insulating layer 20 is reduced in the embodiment of the present application, the hydrogen replenishment capacity of the active layer 10 in the display panel can be enhanced, and thus in the embodiment of the present application, the thickness of the second gate insulating layer 40 can be reduced on the basis of ensuring the required hydrogen replenishment capacity, that is, the thickness of the third sub-portion 41 and the fourth sub-portion 42 can be reduced; since the second gate insulating layer 40 is located above the first doping portion 12 and the second doping portion 13, therefore, the embodiment of the present application can also reduce the dose of B in the first doping portion 12 and the second doping portion 13 in the active layer 10 and the energy required for the doping process, such as reducing the dopant dose and energy during ion bombardment.

[0065] In some embodiments, the driving circuit in the display panel also includes a storage capacitor, and the storage capacitor includes the first gate 30 and the second gate 50 arranged relatively to each other, that is, the first gate 30 and the second gate 50 are arranged relatively to each other along the thickness direction of the display panel, and can also serve as a storage capacitor. In the embodiment of the present application, the thickness of the second gate insulating layer 40 can be reduced, that is, the thickness of the third sub-portion 41 can be reduced, thereby reducing the distance between the first gate 30 and the second gate 50, effectively increasing the capacitance of the storage capacitor, and improving the performance of the driving circuit and the display effect of the display panel.

[0066] In some embodiments, the thickness of the second gate insulating layer 40 is greater than or equal to 50nm and less than 130nm. For example, the thickness of the second gate insulating layer 40 may be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm or 120nm; that is, the thickness of the third sub-section 41 and the thickness of the fourth sub-section 42 may both be greater than or equal to 50nm and less than 130nm; it has been verified that when the thickness of the second gate insulating layer 40 is reduced, the capacitance of the storage capacitor can be increased by 2.6 times. For example, when the thickness of the second gate insulating layer 40 is 50nm, the capacitance of the storage capacitor can be increased by 2.6 times.

[0067] As mentioned above, the embodiment of the present application differentiates the thickness of the first gate insulating layer 20 so that the thickness of the first sub-portion 21 between the first gate 30 and the active layer 10 is greater than the thickness of the second sub-portion 22 not corresponding to the first gate 30. On the basis of ensuring the insulation between the first gate 30 and the active layer 10, the hydrogen in the second gate insulating layer 40 is more easily diffused into the active layer 10 through the second sub-portion 22, thereby improving the hydrogen replenishment capacity of the active layer 10 in the display panel, without increasing the thickness of the second gate insulating layer 40 between the first gate 30 and the second gate 50, and reducing the thickness of the second gate insulating layer 40 to a certain extent, which can effectively increase the capacitance of the storage capacitor in the display panel; that is, the embodiment of the present application can effectively increase the capacitance of the storage capacitor on the basis of ensuring the hydrogen replenishment capacity of the active layer 10 in the display panel.

[0068] In other embodiments of the present application, please refer to Figure 2 , this embodiment and Figure 1 The difference between the illustrated embodiment is that the thickness of the second gate insulating layer 40 is also differently set in this embodiment.

[0069] Specifically, the thickness of the third sub-portion 41 is less than the thickness of the fourth sub-portion 42; that is, the embodiment of the present application increases the capacitance of the storage capacitor by reducing the thickness of the third sub-portion 41, while the thickness of the third sub-portion 41 remains unchanged or increases, so as to further increase the hydrogen replenishment capacity of the active layer 10 in the display panel.

[0070] In some embodiments, the thickness of the third sub-portion 41 is greater than or equal to 50nm and less than 130nm. For example, the thickness of the third sub-portion 41 may be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm or 120nm; the thickness of the fourth sub-portion 42 may be greater than or equal to 130nm.

[0071] In some embodiments, the orthographic projection of the first gate 30 on the first gate insulating layer 20 is not overlapped with the orthographic projection of the fourth sub-portion 42 on the first gate insulating layer 20, and the orthographic projection of the second gate 50 on the first gate insulating layer 20 is not overlapped with the orthographic projection of the fourth sub-portion 42 on the first gate insulating layer 20.

[0072] In some embodiments, the third sub-portion 41 is located on a side of the first sub-portion 21 away from the active layer 10, the fourth sub-portion 42 is located on a side of the second sub-portion 22 away from the active layer 10, and a side of the third sub-portion 41 away from the active layer 10 is flush with a side of the fourth sub-portion 42 away from the active layer 10; since the thickness of the second sub-portion 22 and the thickness of the third sub-portion 41 are reduced in the embodiment of the present application, and thus in the first gate insulation layer 20 and the second gate insulation layer 40, the thickness of the first sub-portion 21 and the thickness of the fourth sub-portion 42 are larger, and the thickness of the second sub-portion 22 and the thickness of the third sub-portion 41 are smaller, therefore, the embodiment of the present application can make the side of the second gate insulation layer 40 away from the first gate insulation layer 20 a plane, so as to improve the flatness of the surface of the second gate insulation layer 40 and the yield rate of subsequent film layers.

[0073] It is understandable that there may be a slight step difference on the side of the second gate insulating layer 40 away from the first gate insulating layer 20. In the embodiment of the present application, the side of the second gate insulating layer 40 away from the first gate insulating layer 20 with a step difference less than or equal to 20 nm can be regarded as a plane.

[0074] In the embodiment of the present application, the thickness of the first gate insulating layer 20 is differentiated so that the thickness of the first sub-portion 21 between the first gate 30 and the active layer 10 is greater than the thickness of the second sub-portion 22 not corresponding to the first gate 30. On the basis of ensuring the insulation between the first gate 30 and the active layer 10, hydrogen in the second gate insulating layer 40 is more easily diffused into the active layer 10 through the second sub-portion 22, thereby improving the hydrogen replenishment capacity of the active layer 10 in the display panel; in addition, the present application The embodiment also differentiates the thickness of the second gate insulating layer 40, reduces the thickness of the third sub-portion 41 located between the first gate 30 and the second gate 50, and the thickness of the fourth sub-portion 42 located above the second sub-portion 22 can remain unchanged or increase, thereby further enhancing the hydrogen replenishment capability of the active layer 10 in the display panel and increasing the capacitance of the storage capacitor in the display panel; that is, the embodiment of the present application can effectively increase the capacitance of the storage capacitor on the basis of enhancing the hydrogen replenishment capability of the active layer 10 in the display panel.

[0075] In other embodiments of the present application, please refer to Figure 3 In this embodiment, the interlayer dielectric layer 60 is disposed on a side of the second gate insulating layer 40 away from the first gate insulating layer 20 , and covers the second gate 50 .

[0076] In some embodiments, the interlayer dielectric layer 60 includes at least one first sublayer 61 and at least one second sublayer 62 stacked in layers; and Figure 3 In the illustrated embodiment, the number of the first sub-layer 61 and the number of the second sub-layer 62 are both 1 for description.

[0077] Among them, the material of the first sub-layer 61 includes at least one of silicon nitride and silicon oxynitride, the material of the second sub-layer 62 includes silicon oxide, and the first sub-layer 61 is in contact with the second gate insulating layer 40 in the interlayer dielectric layer 60; it can be understood that silicon nitride and silicon oxynitride can replenish hydrogen for the active layer 10 located therebelow when the display panel is subjected to a baking process. Therefore, in the embodiment of the present application, the film layer in contact with the second gate insulating layer 40 is set to be the first sub-layer 61 of silicon nitride and / or silicon oxynitride, which can further enhance the hydrogen replenishment capability of the active layer 10 in the display panel.

[0078] In some embodiments, the thickness of the first sublayer 61 in contact with the second gate insulating layer 40 is greater than the thickness of the second sublayer 62; that is, the embodiment of the present application can increase the thickness of the first sublayer 61 in contact with the second gate insulating layer 40, thereby increasing the thickness of the silicon nitride layer stacked above the active layer 10, thereby further enhancing the hydrogen replenishment capacity of the active layer 10 in the display panel, effectively reducing the subthreshold swing of the thin film transistor, and improving the mobility of the thin film transistor, thereby enhancing the performance of the thin film transistor.

[0079] In the embodiment of the present application, the thickness of the first gate insulating layer 20 is differentiated, so that the thickness of the first sub-portion 21 located between the first gate 30 and the active layer 10 is greater than the thickness of the second sub-portion 22 not corresponding to the first gate 30. On the basis of ensuring the insulation between the first gate 30 and the active layer 10, the hydrogen in the second gate insulating layer 40 is more easily diffused into the active layer 10 through the second sub-portion 22, thereby improving the hydrogen replenishment capacity of the active layer 10 in the display panel; in addition, the embodiment of the present application also differentiates the thickness of the first sub-portion 21 located between the first gate 30 and the active layer 10, so that the hydrogen in the second gate insulating layer 40 is more easily diffused into the active layer 10 through the second sub-portion 22, while ensuring the insulation between the first gate 30 and the active layer 10. The distribution of the layers is designed so that the film layer in contact with the second gate insulating layer 40 is set to the first sub-layer 61 of silicon nitride and / or silicon nitride oxide, thereby enhancing the hydrogen replenishment capacity of the active layer 10 in the display panel, and the thickness of the silicon nitride layer stacked above the active layer 10 can be increased by increasing the thickness of the first sub-layer 61 in contact with the second gate insulating layer 40, thereby further enhancing the hydrogen replenishment capacity of the active layer 10 in the display panel, which can effectively reduce the subthreshold swing of the thin film transistor, improve the mobility of the thin film transistor, and enhance the performance of the thin film transistor.

[0080] In other embodiments of the present application, please refer to Figure 4 , this embodiment and Figure 3 The difference between the illustrated embodiments is that the interlayer dielectric layer 60 includes a plurality of first sublayers 61 and a plurality of second sublayers 62 that are stacked and alternately arranged, and this embodiment is described by taking the interlayer dielectric layer 60 including two first sublayers 61 and two second sublayers 62 that are stacked and alternately arranged as an example.

[0081] Among them, the thickness of the first sublayer 61 in contact with the second gate insulating layer 40 is greater than the thickness of the other first sublayers 61 and the thickness of the second sublayer 62; that is, the embodiment of the present application can increase the thickness of the first sublayer 61 in contact with the second gate insulating layer 40, thereby increasing the thickness of the silicon nitride layer stacked above the active layer 10, further enhancing the hydrogen replenishment capacity of the active layer 10 in the display panel, effectively reducing the subthreshold swing of the thin film transistor, and improving the mobility of the thin film transistor, thereby enhancing the performance of the thin film transistor.

[0082] In the embodiment of the present application, the thickness of the first gate insulating layer 20 is differentiated, so that the thickness of the first sub-portion 21 located between the first gate 30 and the active layer 10 is greater than the thickness of the second sub-portion 22 not corresponding to the first gate 30. On the basis of ensuring the insulation between the first gate 30 and the active layer 10, the hydrogen in the second gate insulating layer 40 is more easily diffused into the active layer 10 through the second sub-portion 22, thereby improving the hydrogen replenishment capacity of the active layer 10 in the display panel; in addition, the embodiment of the present application also differentiates the thickness of the first sub-portion 21 located between the first gate 30 and the active layer 10, so that the hydrogen in the second gate insulating layer 40 is more easily diffused into the active layer 10 through the second sub-portion 22, while ensuring the insulation between the first gate 30 and the active layer 10. The distribution of the layers is designed so that the film layer in contact with the second gate insulating layer 40 is set to the first sub-layer 61 of silicon nitride and / or silicon nitride oxide, thereby enhancing the hydrogen replenishment capacity of the active layer 10 in the display panel, and the thickness of the silicon nitride layer stacked above the active layer 10 can be increased by increasing the thickness of the first sub-layer 61 in contact with the second gate insulating layer 40, thereby further enhancing the hydrogen replenishment capacity of the active layer 10 in the display panel, which can effectively reduce the subthreshold swing of the thin film transistor, improve the mobility of the thin film transistor, and enhance the performance of the thin film transistor.

[0083] In other embodiments of this application, please refer to Figure 5 The display panel may further include a substrate 74 , and the substrate 74 is disposed on a side of the buffer layer 71 away from the active layer 10 .

[0084] In some embodiments, the substrate 74 may be a flexible substrate, for example, the material of the substrate 74 may include polyimide; or the substrate 74 may be a rigid substrate, for example, the substrate 74 may be a glass substrate.

[0085] In some embodiments, the display panel may be a liquid crystal display panel, and the display panel further includes a pixel electrode, a common electrode, a liquid crystal layer, a color filter substrate and other structures arranged on a side of the interlayer dielectric layer 60 away from the second gate insulating layer 40 .

[0086] In some embodiments, the display panel may be an organic light emitting diode display panel, and the display panel may further include an anode, an organic light emitting layer, a cathode, an encapsulation layer, a touch layer and other structures arranged on the side of the interlayer dielectric layer 60 away from the second gate insulating layer 40 .

[0087] In addition, an embodiment of the present application further provides a display device, which includes the display panel described in the above embodiment.

[0088] In some embodiments, the display device may include a liquid crystal display device or an organic light emitting diode display device.

[0089] It can be understood that, since the display device includes the display panel as described in the above embodiment, the display device has the same beneficial effects as the display panel described in the above embodiment, which will not be described in detail herein.

[0090] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0091] The above is a detailed introduction to a display panel and a display device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A display panel, characterized in that: include: Active layer; a first gate insulating layer, covering the active layer; A first gate, disposed on a side of the first gate insulating layer away from the active layer; A second gate insulating layer, disposed on a side of the first gate insulating layer away from the active layer and covering the first gate, wherein the second gate insulating layer contains hydrogen elements; A second gate is disposed on a side of the second gate insulating layer away from the first gate; Among them, the first gate insulating layer includes a first sub-portion located between the active layer and the first gate and a second sub-portion connected to the first sub-portion, the thickness of the first sub-portion is greater than the thickness of the second sub-portion, and the second gate insulating layer includes a third sub-portion arranged between the first gate and the second gate and a fourth sub-portion connected to the third sub-portion, the thickness of the third sub-portion is less than or equal to the thickness of the fourth sub-portion.

2. The display panel according to claim 1, characterized in that: An orthographic projection of the first gate on the second gate insulating layer and an orthographic projection of the second sub-portion on the second gate insulating layer are arranged not to overlap.

3. The display panel according to claim 1, characterized in that: The active layer includes a channel portion and a first doped portion and a second doped portion connected to opposite sides of the channel portion. The first gate is located on a side of the first gate insulating layer away from the channel portion. The first sub-portion is located between the first gate and the channel portion.

4. The display panel according to claim 3, characterized in that: The orthographic projection of the second sub-portion on the second gate insulating layer partially overlaps with the orthographic projection of the first doped portion on the second gate insulating layer and the orthographic projection of the second doped portion on the second gate insulating layer, and the orthographic projection of the second sub-portion on the second gate insulating layer does not overlap with the orthographic projection of the channel portion on the second gate insulating layer.

5. The display panel according to claim 1, characterized in that: The thickness of the first sub-portion close to one end of the second sub-portion gradually decreases to form a first inclined surface, the second gate insulating layer covers the first inclined surface, and a first acute angle is formed between the first inclined surface and the plane where the active layer is located; The first gate has a second inclined surface on the same side close to the first inclined surface, and a second included angle of an acute angle is formed between the second inclined surface and the plane where the active layer is located; The difference between the first angle and the second angle is less than or equal to 20°.

6. The display panel according to claim 5, characterized in that: The first angle is greater than the second angle.

7. The display panel according to claim 1, characterized in that: The material of the active layer includes low temperature polysilicon, and the material of the second gate insulating layer includes at least one of silicon nitride and silicon nitride oxide.

8. The display panel according to claim 1, characterized in that: A difference between a thickness of the first sub-portion and a thickness of the second sub-portion is less than or equal to 80 nm.

9. The display panel according to claim 1, characterized in that: The thickness of the second sub-portion is greater than or equal to 50 nm and less than 130 nm.

10. The display panel according to any one of claims 1 to 9, characterized in that: The third sub-portion is located on a side of the first sub-portion away from the active layer, the fourth sub-portion is located on a side of the second sub-portion away from the active layer, and a thickness of the third sub-portion is smaller than a thickness of the fourth sub-portion.

11. The display panel according to claim 10, characterized in that: A surface of the third sub-portion away from the active layer is flush with a surface of the fourth sub-portion away from the active layer.

12. The display panel according to claim 10, characterized in that: The thickness of the third sub-portion is greater than or equal to 50 nm and less than 130 nm, and the thickness of the fourth sub-portion is greater than or equal to 130 nm.

13. The display panel according to claim 10, characterized in that: The display panel further includes a driving circuit, the driving circuit includes a storage capacitor, and the storage capacitor includes the first gate and the second gate that are arranged opposite to each other.

14. The display panel according to any one of claims 1 to 9, characterized in that: The display panel further comprises an interlayer dielectric layer disposed on a side of the second gate insulating layer away from the first gate insulating layer, the interlayer dielectric layer comprising at least one first sublayer and at least one second sublayer stacked; The material of the first sub-layer includes at least one of silicon nitride and silicon oxynitride, the material of the second sub-layer includes silicon oxide, and the first sub-layer is in contact with the second gate insulating layer in the interlayer dielectric layer.

15. The display panel according to claim 14, characterized in that: The thickness of the first sublayer in contact with the second gate insulating layer is greater than the thickness of the second sublayer.

16. The display panel according to claim 14, characterized in that: The interlayer dielectric layer includes a plurality of first sub-layers, and the thickness of the first sub-layer in contact with the second gate insulating layer is greater than the thickness of the other first sub-layers and the thickness of the second sub-layer.

17. A display device, characterized in that: The display device comprises the display panel according to any one of claims 1 to 16.

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