A red light LED chip assembly and a manufacturing method thereof

Abstract

The application relates to a red light LED chip assembly and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a red light epitaxial wafer, wherein the red light epitaxial wafer comprises a P-type semiconductor layer, a light-emitting layer and an N-type semiconductor layer which are stacked in sequence; forming a metal layer on the N-type semiconductor layer; performing annealing treatment on the red light epitaxial wafer with the metal layer, so as to form a modified layer on one side of the N-type semiconductor layer close to the metal layer; and removing the metal layer and exposing the modified layer, wherein the modified layer is used for forming an ohmic contact with a transparent conductive material. The LED chip assembly manufacturing method can effectively improve the light-emitting efficiency of the LED chip assembly.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of LED chip, and particularly to a red light LED chip assembly and a manufacturing method thereof. BACKGROUND

[0002] High-brightness AlGaInP light-emitting diodes are widely used, which are electronic components that generate photons through the radiative recombination of conduction band electrons and valence band holes in semiconductor materials, and directly convert electrical energy into light energy. Compared with traditional light sources, they have the advantages of high efficiency, energy saving, environmental protection and long service life, and play an important role in energy saving and emission reduction and green development, and are recognized as a new generation of green lighting light source in the twenty-first century. The development and application of semiconductors are also making this concept gradually deepen, so improving the brightness of LEDs is an inevitable choice in the current semiconductor market.

[0003] At present, AlGaInP red light vertical Micro LED adopts metal electrode, and the metal electrode is not transparent to light, which will shield the light emission of the AlGaInP red light vertical Micro LED, so that the light emission of the AlGaInP red light vertical Micro LED presents a double-peak distribution with a concave middle. When this AlGaInP red light vertical Micro LED is applied to display, it will affect the visual effect. SUMMARY

[0004] In view of the deficiencies of the prior art, the purpose of the present application is to provide an LED chip assembly and a manufacturing method thereof, which aims to solve the problem of light shielding of the metal electrode of the red light vertical Micro LED.

[0005] In a first aspect, the present application provides a manufacturing method of a red light LED chip assembly, comprising:

[0006] providing a red light epitaxial wafer, the red light epitaxial wafer comprising a P-type semiconductor layer, a light-emitting layer and an N-type semiconductor layer stacked in sequence; forming a metal layer on the N-type semiconductor layer; annealing the red light epitaxial wafer with the metal layer to form a modified layer on the side of the N-type semiconductor layer close to the metal layer; removing the metal layer and exposing the modified layer, the modified layer being used to form an ohmic contact with a transparent conductive material.

[0007] In the embodiments of the present application, when manufacturing the red light LED chip assembly, a metal layer is formed on the N-type semiconductor layer, and then annealing treatment is performed to form a modified layer on the side of the N-type semiconductor layer close to the metal layer. The modified layer can form a good ohmic contact with the transparent conductive material, so that the transparent conductive material can be used instead of the traditional metal electrode, thereby improving the light emission efficiency of the LED chip assembly.

[0008] As an optional implementation, the metal layer comprises one or more of Au, Al, Ag, Cu, Ni, Zn, Be, and Ge.

[0009] As an optional implementation, the modified layer is formed after replacing the metal elements in the N-type semiconductor layer with the metal elements in the metal layer.

[0010] As an optional implementation, the annealing treatment on the red light epitaxy with the metal layer comprises: placing the red light epitaxy with the metal layer in an environment with a temperature of 300-500°C for 20-60s.

[0011] As an optional implementation, the transparent conductive material comprises one of ITO, IGO, and IZO.

[0012] As an optional implementation, the method further comprises: bonding the P-type semiconductor layer side of the red light epitaxy to a CMOS substrate, wherein the CMOS substrate comprises a plurality of first contacts and at least one second contact; after the bonding, the P-type semiconductor layer and the CMOS substrate are connected through a metal bonding layer; patterning the metal bonding layer, the P-type semiconductor layer, the light emitting layer, the N-type semiconductor layer, and the modified layer to form a plurality of independent semi-finished LED units on the CMOS substrate, wherein the metal bonding layer between each semi-finished LED unit and the CMOS substrate is connected to one first contact; forming an insulating layer on the sidewalls of the plurality of independent semi-finished LED units; covering the transparent conductive material on the plurality of independent semi-finished LED units, wherein the transparent conductive material is connected to the second contact and the modified layer.

[0013] In the embodiments of the present application, the P-type semiconductor layer side of the red light epitaxy is bonded to a CMOS substrate, then a modified layer that can form a good ohmic contact with the transparent conductive material is formed on the N-type semiconductor layer, and the red light epitaxy is patterned to form independent semi-finished LED units at the positions of each corresponding first contact of the CMOS substrate, and finally the modified layer of the semi-finished LED unit and the second contact of the CMOS substrate are connected through the transparent conductive material. When the first contact and the second contact of the CMOS substrate are powered, the semi-finished LED unit can form a current loop. Since the modified layer of each semi-finished LED unit is covered with the transparent conductive material, the light emitted by the semi-finished LED unit can be emitted without obstruction from the N-type semiconductor side. Compared with the metal electrode used in the traditional LED unit, the LED assembly of the present application can improve the light emission efficiency.

[0014] As an optional implementation, the method further comprises: covering the transparent conductive material on the modification layer to form a transparent electrode; and forming a metal electrode on the P-type semiconductor layer.

[0015] In the embodiments of the present application, the transparent conductive material is covered on the modification layer to replace the traditional metal electrode, so that the metal electrode can be avoided to shield the light emission of the LED component.

[0016] In the embodiments of the present application, the transparent conductive material is covered on the modification layer to replace the traditional metal electrode, so that the metal electrode can be avoided to shield the light emission of the LED component.

[0017] In the embodiments of the present application, the transparent conductive material is covered on the modification layer to replace the traditional metal electrode, so that the metal electrode can be avoided to shield the light emission of the LED component.

[0018] In the embodiments of the present application, the transparent conductive material is covered on the modification layer to replace the traditional metal electrode, so that the metal electrode can be avoided to shield the light emission of the LED component.

[0019] In the embodiments of the present application, the transparent conductive material is covered on the modification layer to replace the traditional metal electrode, so that the metal electrode can be avoided to shield the light emission of the LED component.

[0020] In a fourth aspect, based on the same idea, the application provides another red LED chip assembly, which comprises: a CMOS substrate, the CMOS substrate comprising a plurality of first contacts and at least one second contact; a plurality of LED units arranged on the CMOS substrate, each LED unit comprising, in sequence, a metal bonding layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and a modification layer; wherein the modification layer is formed by forming a metal layer on the N-type semiconductor layer and then annealing, and the modification layer is used to form an ohmic contact with a transparent conductive material, and the metal bonding layer of each LED unit is connected with one of the first contacts; the sidewalls of the plurality of LED units are provided with an insulating layer; and a transparent conductive layer, which is used to form an electrical connection between the second contact and the modification layer of each LED unit.

[0021] In the embodiment of the application, the transparent semiconductor material connects the modification layer of the semi-finished LED unit and the second contact of the CMOS substrate. When the first contact and the second contact of the CMOS substrate are powered, the semi-finished LED unit can form a current loop. Since the modification layer of each semi-finished LED unit is covered with a transparent conductive material, the light emitted by the semi-finished LED unit can be emitted without obstruction from the N-type semiconductor side. Compared with the metal electrode used in the conventional LED unit, the LED assembly of the present application can improve the light emission efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0022] Figure 1 A schematic diagram of the light emission of a conventional vertical red LED;

[0023] Figure 2 A schematic diagram of the light emission distribution of a conventional vertical red LED;

[0024] Figure 3 A schematic diagram of the process of the manufacturing method of the LED chip assembly provided in the embodiment of the application;

[0025] Figure 4 A schematic diagram of the red epitaxial structure provided in the embodiment of the application;

[0026] Figure 5 A schematic diagram of the red epitaxial structure provided in the embodiment of the application and having the metal layer;

[0027] Figure 6 A schematic diagram of the red epitaxial structure provided in the embodiment of the application and after annealing and removal of the metal layer;

[0028] Figures 7-11 A schematic diagram of the process of the manufacturing method of the LED chip assembly provided in the embodiment of the application;

[0029] Figures 12-13Another LED chip assembly manufacturing method process schematic diagram provided by the embodiment of the present application.

[0030] Figure 10 - P-type semiconductor layer; 20 - light emitting layer; 30 - N-type semiconductor layer; 40 - metal layer; 50 - modified layer; 60 - transparent electrode; 70 - metal electrode; 80 - metal bonding layer; 81 - first sub-metal bonding layer; 82 - second sub-metal bonding layer; 90 - CMOS substrate; 100 - first contact; 110 - second contact; 120 - insulating layer; 130 - transparent conductive layer. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0032] The present disclosure provides many different embodiments or examples for implementing different structures of the present application. In order to simplify the disclosure of the present application, the components and settings of specific examples in the present application are described. Of course, they are only examples, and the purpose is not to limit the present application. In addition, the present application can repeatedly refer to numbers and / or letters in different examples, and such repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present application provides examples of various specific processes and materials, but those skilled in the art can realize the application of other processes and / or the use of other materials.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. In general, the nomenclature used herein is understood in at least part by the context of the application. For example, the term "one or more" as used herein can be used in the singular or plural to describe any component, structure or characteristic, depending at least in part on the context of the application. Similarly, terms such as "a", "an", or "the" can also be understood, at least in part, depending on the context of the application, to convey a singular usage or to convey a plural usage. In addition, the term "based on" can be understood as not necessarily intending to convey a set of exclusive factors, but can instead allow for additional factors not necessarily explicitly described, depending at least in part on the context of the application.

[0034] It should be readily understood that the terms "on", "over", and "on top of" in the present application should be interpreted in the broadest relative terms consistent with the context. That is, "on" means not only "directly on" but also "on" with intervening parts or layers therebetween, and "over" or "on top of" means not only "over" or "on top of" in the sense of that term, but also "over" or "on top of" in the sense of that term without intervening parts or layers therebetween.

[0035] In addition, for the sake of description, spatially relative terms - such as "beneath", "below", "lower", "above", "upper" and the like - can be used herein for describing the relative location of one element or component to another element(s) or component(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The devices can be otherwise oriented (rotated 90° or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

[0036] The term "layer" as used in the present application refers to a portion of material that includes a region having a thickness. A layer can extend over an entire underlying or overlying structure, or can have an extent less than the underlying or overlying structure. Further, a layer can be a region of a homogenous or inhomogenous continuous structure having a thickness less than the thickness of the continuous structure. For example, a layer can be between the top surface and the bottom surface of a continuous structure or between any pair of horizontal planes therebetween. A layer can extend horizontally, vertically, and / or along a tapered surface. A substrate can be a layer, can include one or more layers therein, and / or can have one or more layers thereon, above, and / or below. A layer can include multiple layers. For example, a semiconductor layer can include one or more doped or undoped semiconductor layers, and can have the same or different materials.

[0037] Reference is made to Figure 1 and Figure 2 , Figure 1 is a schematic diagram of the light emission of a conventional vertical red LED; Figure 2 is a schematic diagram of the light emission distribution of a conventional vertical red LED. In a conventional vertical red LED, a P electrode and an N electrode are provided on a P-type semiconductor and an N-type semiconductor, respectively, both of which are metal materials. However, the electrodes of metal materials have a shielding effect on light. Therefore, the light emission of the conventional vertical red LED is shielded by the electrodes as shown in Figure 1 , and the light emission distribution is as shown in Figure 2 , the middle part shielded by the metal electrodes is darker, so that the light emission distribution is non-uniform.

[0038] Based on this, the present application hopes to provide a solution to solve the above technical problems, and the detailed content will be described in the subsequent embodiments.

[0039] Reference Figure 3 A flow chart of an LED chip assembly manufacturing method provided by the embodiments of the present application is shown in the figure. The method comprises:

[0040] 101: Provide a red light epitaxial layer, which comprises a P-type semiconductor layer 10, a light emitting layer 20 and an N-type semiconductor layer 30 stacked in sequence.

[0041] In the embodiments of the present application, the above-mentioned red light epitaxial layer can be as shown in the figure, comprising a P-type semiconductor layer 10, a light emitting layer 20 and an N-type semiconductor layer 30 stacked in sequence. Figure 4

[0042] Specifically, the N-type semiconductor layer 30 or the P-type semiconductor layer 10 can include AlInP, GaInP, AlGaInP and other III-V compound semiconductor materials; the light emitting layer 20 can be a multiple quantum well structure (Multiple Quantum Well, MQW), wherein the quantum well or quantum barrier can include AlGaInP; the multiple quantum well structure can include one or two or three or four or five or six or six or seven or eight quantum wells (or at least one quantum hole).

[0043] 102: Form a metal layer 40 on the N-type semiconductor layer 30.

[0044] In the embodiments of the present application, the metal layer 40 formed on the N-type semiconductor layer 30 can be formed on the N-type semiconductor layer 30 by evaporation, sputtering or deposition. The metal layer 40 includes one or more of Au, Al, Ag, Cu, Ni, Zn, Be, Ge.

[0045] For example, the metal layer 40 can use Au / Ge alloy, Au / Ge / Ni alloy or Au / Ge / Ni / Au alloy, and the reinforcing layer can use sub-layer sequence of Ag, Sn, Ni, or Ag, Sn, Pt, or Ag, Al, Ni, or Al, Ni, Pt, or Ag, Ni, or Sn, Pt, or Ag, Al, Pt, Ni, or Au, Al, Pt, Ti, etc.

[0046] 103: Annealing treatment is performed on the red light epitaxial layer with the metal layer 40 to form a modified layer 50 on the side of the N-type semiconductor layer 30 close to the metal layer 40.

[0047] ​In this embodiment of the application, the annealing process refers to a metal heat treatment process in which the red epitaxial layer having the metal layer 40 is slowly heated to a certain temperature, held for a sufficient time, and then cooled at an appropriate rate.

[0048] In this embodiment of the application, the red epitaxial layer having the metal layer 40 is as follows: Figure 5 As shown; specifically, the annealing process for the red epitaxial layer having the metal layer 40 includes: placing the red epitaxial layer having the metal layer 40 in a heating device, slowly raising the temperature to 300-500°C, and maintaining it within this temperature range for 20-60 seconds; then cooling it at a suitable rate. During the annealing process, the metal elements in the metal layer 40 replace the metal elements in the N-type semiconductor layer 30, and then the modified layer 50 is formed at the original interface between the metal layer 40 and the N-type semiconductor layer 30. That is, the modified layer 50 is a semiconductor layer formed after the metal elements in the metal layer 40 replace the metal elements in the N-type semiconductor layer 30. For example, when the N-type semiconductor layer is AlGaInP and the metal layer is an Au / Ge / Ni alloy, the modified layer is AlGeInP formed by replacing the Ga elements in AlGaInP with the Ge elements in the Au / Ge / Ni alloy.

[0049] 104: Remove the metal layer 40 and expose the modified layer 50, which can form an ohmic contact with the transparent conductive material.

[0050] In this embodiment, the modified layer 50 can form an ohmic contact with a transparent conductive material. Therefore, after the modified layer 50 is formed at the original interface between the metal layer 40 and the N-type semiconductor layer 30, the remaining metal layer 40 is removed to expose the modified layer 50. The specific structure can be found in [reference needed]. Figure 6 .

[0051] In this embodiment of the application, when fabricating a red LED chip assembly, a metal layer 40 is formed on an N-type semiconductor layer 30, and then annealed to form a modified layer 50 on the side of the N-type semiconductor layer 30 close to the metal layer 40. The modified layer 50 can form a good ohmic contact with a transparent conductive material, so a transparent conductive material can be used to replace the traditional metal electrode, thereby improving the light extraction efficiency of the LED chip assembly.

[0052] refer to Figures 7-9As an optional embodiment, the LED chip assembly manufacturing method further comprises: bonding the P-type semiconductor layer 10 side of the red light epitaxial layer to a CMOS substrate 90, wherein the CMOS substrate 90 comprises a plurality of first contacts 100 and at least one second contact 110; after the bonding, the P-type semiconductor layer 10 and the CMOS substrate 90 are connected through a metal bonding layer 80; patterning the metal bonding layer 80, the P-type semiconductor layer 10, the light-emitting layer 20, the N-type semiconductor layer 30, and the modification layer 50 to form a plurality of independent semi-finished LED units on the CMOS substrate 90, wherein the metal bonding layer 80 between each of the semi-finished LED units and the CMOS substrate 90 is connected to one of the first contacts 100; forming an insulating layer 120 on the sidewalls of the plurality of independent semi-finished LED units; and covering the transparent conductive material 130 on the plurality of independent semi-finished LED units, wherein the transparent conductive material 130 is connected to the second contact 110 and the modification layer 50.

[0053] As shown in FIG. 1, a CMOS substrate 90 is provided, wherein the CMOS substrate 90 comprises a plurality of first contacts 100 and at least one second contact 110. A first sub-metal bonding layer 81 is formed on the P-type semiconductor layer 10 of the red light epitaxial layer, and a second sub-metal bonding layer 82 is formed on the CMOS substrate 90. Figure 7 As shown in FIG. 2, the red light epitaxial layer is bonded to the CMOS substrate 90, and the first sub-metal bonding layer 81 and the second sub-metal bonding layer 82 are fused to form a metal bonding layer 80.

[0054] Figure 8 As shown in FIG. 3, the metal bonding layer 80, the P-type semiconductor layer 10, the light-emitting layer 20, the N-type semiconductor layer 30, and the modification layer 50 are patterned to form a plurality of independent semi-finished LED units on the CMOS substrate 90, wherein the metal bonding layer 80 between each of the semi-finished LED units and the CMOS substrate 90 is connected to one of the first contacts 100.

[0055] As shown in FIG. 4, an insulating layer 120 is formed on the sidewalls of the plurality of independent semi-finished LED units. Figure 9 As shown in FIG. 5, the transparent conductive material 130 is covered on the plurality of independent semi-finished LED units, wherein the transparent conductive material 130 is connected to the second contact 110 and the modification layer 50. The transparent conductive material 130 comprises one of ITO, IGO, and IZO.

[0056] Figure 10 As shown in FIG. 5, the transparent conductive material 130 is covered on the plurality of independent semi-finished LED units, wherein the transparent conductive material 130 is connected to the second contact 110 and the modification layer 50. The transparent conductive material 130 comprises one of ITO, IGO, and IZO.

[0057] As shown in FIG. 5, the transparent conductive material 130 is covered on the plurality of independent semi-finished LED units, wherein the transparent conductive material 130 is connected to the second contact 110 and the modification layer 50. The transparent conductive material 130 comprises one of ITO, IGO, and IZO. Figure 11 As shown in FIG. 5, the transparent conductive material 130 is covered on the plurality of independent semi-finished LED units, wherein the transparent conductive material 130 is connected to the second contact 110 and the modification layer 50. The transparent conductive material 130 comprises one of ITO, IGO, and IZO.​​

[0058] It can be understood that, as Figure 4 The red light epitaxy is provided to be bonded to the CMOS substrate 90, and then the steps 101-103 are performed to form the modification layer 50 on the N-type semiconductor layer 30; and then the steps as Figures 9-11 are performed. Details are not described herein.

[0059] In the embodiment, the P-type semiconductor layer 10 of the red light epitaxy is bonded to the CMOS substrate 90, and then the modification layer 50 capable of forming an ohmic contact with the transparent conductive material is formed on the N-type semiconductor layer 30, and the red light epitaxy is patterned to form an independent semi-finished LED unit at each corresponding first contact 100 of the CMOS substrate 90, and finally the modification layer 50 of the semi-finished LED unit and the second contact 110 of the CMOS substrate 90 are connected through the transparent semiconductor material. When the first contact 100 and the second contact 110 of the CMOS substrate 90 are powered, the semi-finished LED unit can form a current loop. Since the modification layer 50 of each semi-finished LED unit is covered by the transparent conductive material, the light emitted by the semi-finished LED unit can be emitted without being blocked by the N-type semiconductor side. Compared with the metal electrode used in the conventional LED unit, the LED assembly can improve the light emission efficiency.

[0060] Referring to Figures 12-13 , as an optional embodiment, the LED chip assembly manufacturing method can further include: covering the transparent conductive material on the modification layer 50 to form a transparent electrode 60; and forming a metal electrode 70 on the P-type semiconductor layer 10. The transparent conductive material includes one of ITO, IGO, and IZO.

[0061] In the embodiment, the transparent conductive material is covered on the modification layer 50 to replace the conventional metal electrode, so that the metal electrode can be avoided to block the light emission of the LED assembly.

[0062] Referring to Figure 6 , the application further provides a red light LED chip assembly, including: a red light epitaxy including a P-type semiconductor layer 10, a light emitting layer 20, an N-type semiconductor layer 30, and a modification layer 50 stacked in sequence; wherein the modification layer 50 is formed by forming a metal layer 40 on the N-type semiconductor layer 30 and then annealing, and the modification layer 50 can form an ohmic contact with the transparent conductive material.

[0063] In the embodiments of the present application, the modification layer 50 is formed on the N-type semiconductor layer 30, which can form a good ohmic contact with the transparent conductive material, so that the transparent conductive material can be used to replace the traditional metal electrode, thereby improving the light emission efficiency of the LED chip assembly.

[0064] Reference Figure 11 Based on the same idea, the present application provides another red LED chip assembly, which comprises a CMOS substrate 90, the CMOS substrate 90 comprising a plurality of first contacts 100 and at least one second contact 110; a plurality of LED units arranged on the CMOS substrate 90, the LED units comprising a metal bonding layer 80, a P-type semiconductor layer 10, a light emitting layer 20, an N-type semiconductor layer 30 and a modification layer 50 stacked in sequence; wherein the modification layer 50 is formed by forming a metal layer 40 on the N-type semiconductor layer 30 and annealing, and the modification layer 50 can form an ohmic contact with a transparent conductive material, the metal bonding layer 80 of each LED unit is connected with one first contact 100; the sidewall of the plurality of LED units is provided with an insulating layer 120; and a transparent conductive layer 130 is arranged for forming an electrical connection between the second contact 110 and the modification layer 50 of each LED unit.

[0065] In the embodiments of the present application, the transparent semiconductor material connects the modification layer 50 of the semi-finished LED unit and the second contact 110 of the CMOS substrate 90. When the first contact 100 and the second contact 110 of the CMOS substrate 90 are energized, the semi-finished LED unit can form a current loop. Since the modification layer 50 of each semi-finished LED unit is covered with a transparent conductive layer 130 formed of the transparent conductive material, the light emitted by the semi-finished LED unit can be emitted without being blocked by the N-type semiconductor side. Compared with the traditional LED unit using a metal electrode, the LED assembly of the present application can improve its light emission efficiency.

[0066] Reference Figure 13 Based on the same idea, the present application provides another red LED chip assembly, which comprises a CMOS substrate 90, the CMOS substrate 90 comprising a plurality of first contacts 100 and at least one second contact 110; a plurality of LED units arranged on the CMOS substrate 90, the LED units comprising a metal bonding layer 80, a P-type semiconductor layer 10, a light emitting layer 20, an N-type semiconductor layer 30 and a modification layer 50 stacked in sequence; wherein the modification layer 50 is formed by forming a metal layer 40 on the N-type semiconductor layer 30 and annealing, and the modification layer 50 can form an ohmic contact with a transparent conductive material, the metal bonding layer 80 of each LED unit is connected with one first contact 100; the sidewall of the plurality of LED units is provided with an insulating layer 120; and a transparent conductive layer 130 is arranged for forming an electrical connection between the second contact 110 and the modification layer 50 of each LED unit.

[0067] In the embodiment of the present application, by forming a modification layer on the side of the red light epitaxial N-type semiconductor layer 30 and covering the transparent conductive material on the modification layer to replace the traditional metal electrode, the shielding of the metal electrode to the light emission of the LED component can be avoided.

[0068] It should be understood that the application is not limited to the above examples, and can be improved or changed by those skilled in the art according to the above description, and all these improvements and changes shall belong to the protection scope of the appended claims of the present application.

Claims

1. A method for fabricating a red LED chip assembly, the method comprising: The method comprises: ​ providing a red light epitaxial layer, the red light epitaxial layer comprising a P-type semiconductor layer, a light emitting layer and an N-type semiconductor layer stacked in sequence; forming a metal layer on the N-type semiconductor layer; annealing the red light epitaxial layer with the metal layer to form a modified layer on a side of the N-type semiconductor layer close to the metal layer; removing the metal layer and exposing the modified layer, the modified layer being used to form an ohmic contact with a transparent conductive material.

2. The red LED chip assembly fabrication method according to claim 1, wherein, The metal layer comprises one or more of Au, Al, Ag, Cu, Ni, Zn, Be and Ge.

3. The red LED chip assembly fabrication method according to claim 1, wherein, The modified layer is a semiconductor layer formed after metal elements in the metal layer replace metal elements in the N-type semiconductor layer.

4. The red LED chip assembly fabrication method according to claim 1, wherein, The annealing of the red light epitaxial layer with the metal layer comprises: placing the red light epitaxial layer with the metal layer in an environment with a temperature of 300-500°C for 20-60s.

5. The red LED chip assembly fabrication method according to claim 1, wherein, The transparent conductive material comprises one of ITO, IGO and IZO.

6. The red LED chip assembly fabrication method according to any one of claims 1-5, wherein, The method further comprises: bonding a side of the P-type semiconductor layer of the red light epitaxial layer to a CMOS substrate, the CMOS substrate comprising a plurality of first contacts and at least one second contact; after the bonding, the P-type semiconductor layer and the CMOS substrate are connected by a metal bonding layer; patterning the metal bonding layer, the P-type semiconductor layer, the light emitting layer, the N-type semiconductor layer and the modified layer to form a plurality of independent semi-finished LED units on the CMOS substrate, the metal bonding layer between each of the semi-finished LED units and the CMOS substrate being connected to one of the first contacts; forming an insulating layer on sidewalls of the plurality of independent semi-finished LED units; covering the transparent conductive material on the plurality of independent semi-finished LED units, the transparent conductive material being connected to the second contact and the modified layer.

7. The red LED chip assembly fabrication method according to any one of claims 1-5, wherein, The method further comprises: covering the transparent conductive material on the modified layer to form a transparent electrode; forming a metal electrode on the P-type semiconductor layer.

8. A red LED chip assembly, characterized by The method comprises: a red light epitaxial layer comprising a P-type semiconductor layer, a light emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; wherein the modified layer is formed by forming a metal layer on the N-type semiconductor layer and annealing, and the modified layer is used to form an ohmic contact with a transparent conductive material.

9. A red LED chip assembly, characterized by The method comprises: a P-type semiconductor layer, a light emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; wherein the modified layer is formed by forming a metal layer on the N-type semiconductor layer and annealing, and the modified layer is used to form an ohmic contact with a transparent conductive material; a transparent electrode formed by the transparent conductive material, covering the modified layer; a metal electrode connected to the P-type semiconductor layer.

10. A red LED chip assembly, characterized by The method comprises: a CMOS substrate, the CMOS substrate comprising a plurality of first contacts and at least one second contact; a plurality of LED units disposed on the CMOS substrate, the LED units comprising a metal bonding layer, a P-type semiconductor layer, a light emitting layer, an N-type semiconductor layer and a modified layer stacked in sequence; The modification layer is formed by forming a metal layer on the N-type semiconductor layer and annealing, and is used to form an ohmic contact with a transparent conductive material. The metal bonding layer of each LED unit is connected to one of the first contacts. The sidewalls of the plurality of LED units are provided with an insulating layer. A transparent conductive layer is used to form an electrical connection between the second contacts and the modification layer of each LED unit.

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