Manufacturing method of light-emitting element and electronic device using light-emitting element

Abstract

The invention provides a light-emitting element, a manufacturing method thereof and an electronic device using the light-emitting element. The manufacturing method of the light-emitting element comprises the following steps. A light emitting diode is provided. Applying an energy beam on the buffer layer of the light emitting diode to form a surface rough layer on the light emitting diode; the surface rough layer comprises a plurality of protruding microstructures, and the protruding microstructures are separated from one another. And the height of the plurality of convex microstructures is in a range of 10 nanometers to 100 nanometers. And the width of the plurality of convex microstructures is in a range of 10 nanometers to 1000 nanometers. The distance between every two adjacent protruding microstructures ranges from 10 nanometers to 1000 nanometers. The light-emitting element manufactured by the manufacturing method of the light-emitting element disclosed by the embodiment of the invention can improve the light extraction efficiency, can have a better light emitting effect, and can be electrically connected with a driving circuit to form an electronic device.

Description

[0001] The present invention is a divisional application of the invention patent application with application number 201911099698.6 filed on November 12, 2019 and invention name “Method for manufacturing light-emitting element and electronic device using light-emitting element”. Technical Field

[0002] The present disclosure relates to a method for manufacturing a semiconductor element, and more particularly to a method for manufacturing a light-emitting element and an electronic device using the light-emitting element. Background Art

[0003] In recent years, light-emitting elements with light-emitting diodes or electronic devices using light-emitting elements have gradually become a trend in display or lighting. Light-emitting diodes usually use lasers to decompose the undoped gallium nitride layer into a gallium layer and a nitrogen layer, thereby separating the light-emitting diode from the sapphire substrate, wherein the gallium layer is likely to remain on the surface of the light-emitting diode, thereby affecting the effective light extraction efficiency and light type of the light-emitting diode. In order to remove the gallium layer on the surface of the light-emitting diode, hydrogen chloride is currently used to remove it by pickling. However, the pickling step not only damages the substrate or the solder / bump material of the light-emitting diode, thereby resulting in a decrease in the yield or limited material use, but also causes environmental pollution and is not in line with the trend of green production. Therefore, how to effectively remove the gallium layer on the surface of the light-emitting diode, thereby improving the light extraction efficiency of the light-emitting diode, has become one of the problems that need to be solved urgently. Summary of the invention

[0004] The present disclosure provides a method for manufacturing a light-emitting element and an electronic device using the light-emitting element, which can improve light extraction efficiency and have a better light extraction effect.

[0005] According to an embodiment of the present disclosure, a method for manufacturing a light-emitting element includes the following steps. A light-emitting diode is provided. An energy beam is applied to a buffer layer of the light-emitting diode to form a surface roughness layer on the light-emitting diode. The surface roughness layer includes a plurality of protruding microstructures, and the plurality of protruding microstructures are separated from each other. The height of the plurality of protruding microstructures is in the range of 10 nanometers to 100 nanometers. The width of the plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers. The spacing between two adjacent plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers.

[0006] According to another embodiment of the present disclosure, a light emitting element includes a light emitting diode and a surface roughness layer. The surface roughness layer is formed on the light emitting diode. The surface roughness layer includes a plurality of protruding microstructures, and the plurality of protruding microstructures are separated from each other. The height of the plurality of protruding microstructures is in the range of 10 nanometers to 100 nanometers. The width of the plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers. The spacing between two adjacent plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers.

[0007] According to another embodiment of the present disclosure, an electronic device includes a light-emitting element and a driving circuit electrically connected to the light-emitting element. The light-emitting element includes a light-emitting diode and a surface roughness layer. The surface roughness layer is formed on the light-emitting diode. The surface roughness layer includes a plurality of protruding microstructures, and the plurality of protruding microstructures are separated from each other. The height of the plurality of protruding microstructures is in the range of 10 nanometers to 100 nanometers. The width of the plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers. The spacing between two adjacent plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers.

[0008] In summary, in the embodiments disclosed herein, an energy beam is applied to process the surface of a light-emitting diode, wherein the power density of the energy beam is greater than 0 mJ / cm2 and less than or equal to 2000 mJ / cm2, thereby improving the light extraction efficiency of the light-emitting element and the electronic device using the light-emitting element, and achieving a better light extraction effect.

[0009] In order to make the above features and advantages of the present disclosure more obvious and understandable, embodiments are given below with reference to the accompanying drawings for detailed description as follows. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] The accompanying drawings are included to provide a further understanding of the present invention and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the present invention and together with the description serve to explain the principles of the present invention.

[0011] Figures 1A to 1E A cross-sectional schematic diagram of a method for manufacturing a light-emitting element according to an embodiment of the present disclosure;

[0012] FIG. 2A to FIG. 2C is a cross-sectional schematic diagram of various light-emitting elements of various embodiments disclosed herein;

[0013] FIG. 3A to FIG. 3B It is a cross-sectional schematic diagram of partial steps of a method for manufacturing a light-emitting element according to another embodiment of the present disclosure.

[0014] Description of Figure Numbers

[0015] 10: first substrate;

[0016] 20: second substrate;

[0017] 100: light emitting diode;

[0018] 100a, 100b, 100c, 100d, 100e: light emitting elements;

[0019] 110: epitaxial structure layer;

[0020] 112: first type semiconductor layer;

[0021] 114: light-emitting layer;

[0022] 116: second type semiconductor layer;

[0023] 120: buffer layer;

[0024] 120a, 120e: surface roughness layer;

[0025] 122a, 122b, 122c, 122d: microstructure;

[0026] 130: first type electrode;

[0027] 140: second type electrode;

[0028] H: height;

[0029] L1, L2, L2': energy beam;

[0030] P: spacing;

[0031] S: surface;

[0032] T1: first thickness;

[0033] T2: second thickness;

[0034] W: width. DETAILED DESCRIPTION

[0035] A structure (or layer, component, substrate) described in the present disclosure is located on another structure (or layer, component, substrate), which may mean that the two structures are adjacent and directly connected, or may mean that the two structures are adjacent but not directly connected, and the indirect connection means that there is at least one intermediate structure (or intermediate layer, intermediate component, intermediate substrate, intermediate interval) between the two structures, the lower surface of one structure is adjacent to or directly connected to the upper surface of the intermediate structure, and the upper surface of the other structure is adjacent to or directly connected to the lower surface of the intermediate structure, and the intermediate structure can be composed of a single-layer or multi-layer physical structure or a non-physical structure, without limitation. In the present disclosure, when a certain structure is arranged "on" another structure, it may mean that the certain structure is "directly" on the other structure, or that the certain structure is "indirectly" on the other structure, that is, at least one structure is sandwiched between the certain structure and the other structure.

[0036] The electrical connection or coupling described in the present disclosure may refer to direct connection or indirect connection. In the case of direct connection, the endpoints of the components on the two circuits are directly connected or connected to each other by a conductor segment, and in the case of indirect connection, there is a combination of a switch, a diode, a capacitor, an inductor or other non-conductor segment and at least one conductive segment or resistor, or a combination of at least two of the above and at least one conductive segment or resistor between the endpoints of the components on the two circuits.

[0037] In the present disclosure, the thickness, length and width can be measured by optical microscope, and the thickness can be measured by cross-sectional image in electron microscope, but it is not limited to this. In addition, any two values ​​or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0038] In the following embodiments, the same or similar elements will use the same or similar reference numerals, and their redundant description will be omitted. In addition, the features in different embodiments can be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other, and simple equivalent changes and modifications made in accordance with this specification or claims are still within the scope of this disclosure. In addition, the terms "first", "second", etc. mentioned in this specification or claims are only used to name discrete elements or distinguish different embodiments or scopes, and are not used to limit the upper or lower limit of the number of elements, nor are they used to limit the manufacturing order or setting order of the elements.

[0039] In the present disclosure, the light-emitting element may be a light-emitting diode packaging unit, an array substrate having light-emitting diodes, or a display panel having light-emitting diodes. There is no limit to the size of the light-emitting diode, and the light-emitting diode may include spectrum conversion materials such as fluorescence, phosphor, pigment or quantum dot, but is not limited to this. In the present disclosure, the electronic device may be a display device, a light source device, a backlight device, a sensing device, an antenna device or a splicing device including a light-emitting element, but is not limited to this. The electronic device may be a bendable or flexible electronic device. It should be noted that the electronic device may be any arrangement or combination of the foregoing, but is not limited to this. Furthermore, the electronic device can be applied to any electronic product or electronic device, such as but not limited to televisions, tablet computers, laptop computers, mobile phones, cameras, wearable devices, electronic entertainment devices, communication antennas, etc., but is not limited to this.

[0040] Reference will now be made in detail to exemplary embodiments of the present disclosure, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0041] Figures 1A to 1E FIG. 1 is a cross-sectional view of a method for manufacturing a light emitting element according to an embodiment of the present disclosure. In the method for manufacturing a light emitting element according to the present embodiment, first, please refer to Figure 1A , a light emitting diode 100 is provided, wherein the step of providing the light emitting diode 100 includes providing a first substrate 10 on which the light emitting diode 100 is formed. Here, the light emitting diode 100 is formed on the first substrate 10, wherein the first substrate 10 is, for example, a sapphire substrate, but is not limited thereto. In other embodiments, depending on the growth temperature of the light emitting diode or the temperature resistance of the substrate, the material of the first substrate 10 may include, for example, quartz, silicon, glass, plastic, resin or other materials suitable as a substrate, which are not limited here. In detail, the light emitting diode 100 includes an epitaxial structure layer 110, a buffer layer 120, a first type electrode 130 and a second type electrode 140. The epitaxial structure layer 110 includes a first type semiconductor layer 112, a light emitting layer 114, and a second type semiconductor layer 116, wherein the light emitting layer 114 is located between the first type semiconductor layer 112 and the second type semiconductor layer 116, and the buffer layer 120 is located between the first substrate 10 and the first type semiconductor layer 112. That is, the light emitting diode 100 directly contacts the first substrate 10 with the buffer layer 120. The first-type electrode 130 and the second-type electrode 140 are located on the same side of the light emitting diode 100, and the first-type electrode 130 is electrically connected to the first-type semiconductor layer 112, and the second-type electrode 140 is electrically connected to the second-type semiconductor layer 116. In other words, the light emitting diode 100 of this embodiment is embodied as a flip chip light emitting diode, and can be a small-sized micro light emitting diode (Micro LED) or milli-type light emitting diode (Mini LED).

[0042] Furthermore, the first-type semiconductor layer 112 of the present embodiment may be, for example, an N-type semiconductor layer, and the second-type semiconductor layer 116 may be, for example, a P-type semiconductor layer, and the light-emitting layer 114 may be, for example, a multi-quantum well (MQW) layer, but is not limited thereto. The buffer layer 120 may include an undoped gallium nitride (GaN) layer, which may be used as a stress compensation adjustment between the first substrate 10 during the epitaxial process, and may reduce the dislocation density of the overall epitaxial structure 110 to improve the epitaxial quality. In another embodiment, the material of the buffer layer 120 may also include aluminum (Al). The first-type electrode 130 may be, for example, an N-type electrode, and the second-type electrode 140 may be, for example, a P-type electrode, but is not limited thereto. In another embodiment, the first-type electrode 130 may be, for example, a P-type electrode, and the second-type electrode 140 may be, for example, an N-type electrode.

[0043] It should be noted that, in this embodiment, each light-emitting diode 100 has a buffer layer 120. However, in other embodiments not shown, one buffer layer 120 may correspond to a plurality of light-emitting diodes 100. In other words, the buffer layer 120 may be a patterned structure or a whole layer of unpatterned structure, which is not limited here. In other embodiments, a multi-layer buffer layer structure may be located between the light-emitting diode 100 and the first substrate 10, and each buffer layer may be made of the same material or different materials.

[0044] Next, please refer to Figure 1A , a second substrate 20 is provided opposite to the first substrate 10, so that the light emitting diode 100 is located between the first substrate 10 and the second substrate 20. Here, the second substrate 20 may function as a temporary substrate, a transfer substrate or a final substrate, wherein the material of the second substrate 20 may include glass, silicon, plastic or resin, and the second substrate 20 as the final substrate may include a thin film transistor (TFT) or other driving elements, which is not limited here.

[0045] Next, please also refer to Figure 1B and Figure 1C, an energy beam L1 (which can be regarded as a first energy beam) is applied to separate the light-emitting diode 100 from the first substrate 10. When the energy beam L1 is applied to the first substrate 10 or the interface between the first substrate 10 and the light-emitting diode 100, the energy beam L1 will destroy the bonding force between the light-emitting diode 100 and the first substrate 10 to separate the light-emitting diode 100 from the first substrate 10 and expose the buffer layer 120 of the light-emitting diode 100. Furthermore, the separated light-emitting diode 100 can be transferred and set on the second substrate 20, and the first type electrode 130 and the second type electrode 140 are in contact with the second substrate 20. A plurality of electrode pads can be set on the second substrate 20, which are electrically connected to the first type electrode 130 and the second type electrode 140 respectively. There can be an electrical connection medium or a medium that helps to strengthen the electrical connection between the electrode pad and the first type electrode 130 or the second type electrode 140, such as anisotropic conductive glue (ACF), conductive glue, conductive metal layer or resin. There may also be no electrical connection medium between the electrode pad and the first type electrode 130 or the second type electrode 140, and the electrode pad and the first type electrode 130 or the second type electrode 140 are electrically connected in a eutectic manner. At this time, the outermost surface of the light-emitting diode 100 is the buffer layer 120, and after the energy beam L1 is applied, the residue of the buffer layer 120 (including gallium) is formed on the upper surface of the buffer layer 120. That is, the material of the buffer layer 120 includes gallium. Here, the energy beam L1 is, for example, a laser beam, but is not limited thereto. The wavelength and intensity of the laser beam can be adjusted as required without limitation.

[0046] Afterwards, please refer to Figure 1D , applying an energy beam L2 (which can be regarded as a second energy beam) to process the surface S of the light emitting diode 100, wherein the power density of the energy beam L2 is, for example, greater than 0 mJ / cm2. 2 ) and less than or equal to 2000 mJ / cm2 2 ). In this embodiment, the power density of the energy beam L2 is greater than 20 mJ / cm2 and less than or equal to 2000 mJ / cm2. In one embodiment, the source of the energy beam L2 is the same as the source of the energy beam L1, wherein the energy beam L2 and the energy beam L1 are laser beams respectively. In another embodiment, the source of the energy beam L2 may be different from the source of the energy beam L1.

[0047] Here, the lower limit of the power density depends on the material and thickness of the light emitting diode 100. In general, a laser power meter can be used to measure a continuous wave (CW) or repetitive pulse light source, and the sensor used is usually a thermopile or a photodiode. The optical resonant cavity is the main factor affecting the laser output mode. The longitudinal mode directly affects the monochromaticity of the laser light (the half-width of the characteristic peak of the spectral line), the coherence length of the laser, and the relationship between the output power and time; the transverse mode affects the size of the divergence angle, the size of the spot, and the maximum value of the output power (i.e., the energy distribution). The power density can be converted by the spot, frequency / wavelength, and energy size.

[0048] Finally, please also refer to Figure 1D and Figure 1E , applying an energy beam L2 to process the surface S of the light-emitting diode 100, in addition to removing the residue (including gallium) of the buffer layer 120, a plurality of microstructures 122 can also be formed. In detail, the energy beam L2 is applied to the buffer layer 120 to form a surface roughness layer 120a on the light-emitting diode 100. Here, the surface roughness layer 120a includes a plurality of raised microstructures (i.e., microstructures 122), and the raised microstructures can be separated from each other, or partially connected to each other and partially separated from each other. That is, the microstructure 122 is a bump. In cross-section, the shape of the raised microstructure is, for example, a trapezoid, a triangle, a semicircle, a semi-ellipse, or an irregular shape, but is not limited thereto. Furthermore, the height H of the microstructure 122 in the Z-axis direction is, for example, in the range of 10 nanometers to 100 nanometers, but is not limited thereto. The width W of the microstructure 122 is, for example, in the range of 10 nanometers to 1000 nanometers in the X-axis direction or the Y-axis direction, but is not limited thereto. In one embodiment, the height H is, for example, the maximum height in the Z-axis direction, and the width W is, for example, the maximum width in the X-axis or the Y-axis direction. In another embodiment, the width W may be, for example, the width of the bottom of the microstructure or the width between the bottoms of two microstructures. The spacing P between two adjacent and separated microstructures 122 is, for example, in the range of 10 nanometers to 1000 nanometers in the X-axis direction or the Y-axis direction, but is not limited thereto.

[0049] In this embodiment, the surface roughness of the surface rough layer 120a is observed and measured by a focused ion beam (FIB) microscope with a magnification of 5000 to 50000 times. The result observed under this condition is that the roughness of the surface rough layer 120a is 10 nanometers to 100 nanometers, wherein the roughness is the height difference (Z-axis direction) between the highest point and the lowest point within a unit length of the surface of the surface rough layer 120a. In addition to using the above-mentioned focused ion microscope, in other embodiments, a scanning electron microscope (SEM) with a magnification of 5000 to 50000 times, or a transmission electron microscope (TEM) with a magnification of 5000 to 50000 times, or an atomic force microscope (AFM) with a measurement scale of 10 micrometers (micrometer) to 100 micrometers (micrometer) can also be used to measure the roughness of the surface rough layer 120a.

[0050] In short, the purpose of applying the energy beam L2 is to remove the residue (including gallium) of the buffer layer 120 and form a microstructure 122 on the surface S of the light-emitting diode 100. That is, the present embodiment removes the derivatives or residues (including gallium) of the buffer layer 120 by laser processing, and simultaneously forms a nanoscale microstructure 122 on the surface of the buffer layer 120, thereby improving the light extraction efficiency of the light-emitting diode 100. In other words, the present embodiment adopts a physical method of laser to remove the derivatives or residues (including gallium) on the surface of the light-emitting diode 100, which is different from the chemical pickling method of the prior art, is more environmentally friendly and in line with the trend of green production. So far, the production of the light-emitting element 100a has been completed. The light-emitting element 100a is arranged on the second substrate 20 in two dimensions (XY plane) and is electrically connected to the driving element or driving circuit on the second substrate 20 to form a light-emitting diode array substrate or a light-emitting diode light-emitting panel. The light-emitting diode array substrate or the light-emitting diode light-emitting panel can be electrically connected to the driving circuit board or IC of the system, and combined with other functional elements and a carrying mechanism to form an electronic device.

[0051] Since the refractive index of the material of the buffer layer 120 (including gallium nitride) (for example, about 2.4) is very different from the refractive index of other dielectric materials (for example, air is about 1), the light extraction efficiency of the light-emitting diode 100 is not good. Generally speaking, in order to improve the light extraction efficiency, a micron-scale structure can also be generated on the surface of gallium nitride through a patterned sapphire substrate to enhance the light extraction efficiency. However, compared with the size of a micro-light-emitting diode, the micron-scale structure is still relatively large and not suitable. In this embodiment, when the derivatives or residues (including gallium) on the buffer layer 120 are removed physically, a nano-scale microstructure 122 can be formed on the surface of the buffer layer 120 at the same time to be suitable for the light-emitting element 100a with a micro size, thereby improving the light extraction efficiency of the light-emitting element 100a.

[0052] In another embodiment, the light emitting diode 100 may also be provided Figure 1C The light emitting diode 100 formed on the second substrate 20 is formed in the embodiment of the present invention. Therefore, the light emitting diode 100 is treated with the energy beam L2 having a power density greater than 20 mJ / cm2 and less than or equal to 2000 mJ / cm2 to remove the residues (including gallium) of the buffer layer 120 and form a microstructure 122 on the surface S of the light emitting diode 100, which still falls within the scope of protection of the present disclosure.

[0053] In addition, it should be noted that in the above-mentioned embodiment, the microstructure 122a of the light emitting element 100a is embodied as a trapezoid in cross-section, but the present invention is not limited thereto. Figure 2A In the embodiment, the microstructure 122b of the light emitting element 100b may also be rectangular; or, in cross-sectional view, Figure 2B In the embodiment, the microstructure 122c of the light emitting element 100c may also be a triangle; or, in cross-sectional view, Figure 2C Of course, in other embodiments not shown, the microstructure of the light emitting element may also be concave, or, viewed from a cross-section, the shape of the microstructure may also be other appropriate shapes or irregular shapes, as long as the light extraction efficiency of the light emitting element can be increased, they all fall within the scope of protection of the present disclosure.

[0054] FIG. 3A to FIG. 3B FIG. 1 is a cross-sectional schematic diagram of a partial step of a method for manufacturing a light-emitting element according to another embodiment of the present disclosure. Figure 1C After the step of applying the energy beam L1 to separate the light emitting diode 100 from the first substrate 10 of the growth substrate, please also refer to Figure 3A and Figure 3B, an energy beam L2' is applied to process the surface S of the light emitting diode 100 to remove at least a portion of the surface S. Here, the power density of the energy beam L2' is greater than 0 mJ / cm2 and less than or equal to 20 mJ / cm2.

[0055] In detail, the area of ​​the buffer layer 120 of the present embodiment is greater than or equal to the area of ​​the surface roughness layer 120e. Furthermore, the buffer layer 120 of the present embodiment has a first thickness T1, and the surface roughness layer 120e has a second thickness T2, and the second thickness T2 is less than the first thickness T1. In other words, the purpose of applying the energy beam L2' in the present embodiment is to thin the residue (including gallium) of the buffer layer 120 to form the surface roughness layer 120e, wherein the ratio of the residue depends on the power density. In short, the present embodiment achieves different residue ratios by matching lower power density to achieve the requirements of light-emitting ratio.

[0056] In this embodiment, the surface roughness of the surface rough layer 120e is observed and measured by a focused ion microscope (FIB) with a magnification of 5000 to 50000 times. The result observed under this condition is that the roughness of the surface rough layer 120e is 1 nanometer to 50 nanometers. In addition to using the above-mentioned focused ion microscope, in other embodiments, a scanning electron microscope (SEM) with a magnification of 5000 to 50000 times, or a transmission electron microscope (TEM) with a magnification of 5000 to 50000 times, or an atomic force microscope (AFM) with a measurement scale of 10 microns to 100 microns can also be used to measure the roughness of the surface rough layer 120e. So far, the production of the light-emitting element 100e has been completed. The light-emitting element 100e is arranged on the second substrate 20 in two dimensions (XY plane) and is electrically connected to the driving element or driving circuit on the second substrate 20 to form a light-emitting diode array substrate or a light-emitting diode light-emitting panel. The LED array substrate or the LED light-emitting panel can be electrically connected to a driving circuit such as a driving circuit board or an IC of the system, and combined with other functional elements and a supporting mechanism to form an electronic device.

[0057] It is worth mentioning that, in another embodiment, providing the light emitting diode 100 may also be providing Figure 1C The light emitting diode 100 has been formed on the second substrate 20. Therefore, the light emitting diode 100 here only needs to be processed by the energy beam L2' with a power density greater than 0 mJ / cm2 and less than or equal to 20 mJ / cm2 to treat the surface S of the light emitting diode 100, so that the residue (including gallium) of the buffer layer 120 can be thinned to form a surface roughness layer 120e.

[0058] In summary, in the embodiments disclosed herein, an energy beam is applied to process the surface of a light-emitting diode, wherein the power density of the energy beam is greater than 0 mJ / cm2 and less than or equal to 2000 mJ / cm2, thereby improving the light extraction efficiency of the light-emitting element and providing a better light extraction effect. In one embodiment, the power density of the energy beam is greater than 20 mJ / cm2 and less than or equal to 2000 mJ / cm2, which can remove the residue of the buffer layer (including gallium) and form a microstructure on the surface of the light-emitting diode, thereby improving the light extraction efficiency of the light-emitting element. In another embodiment, the power density of the energy beam is greater than 0 mJ / cm2 and less than or equal to 20 mJ / cm2, which makes the residue of the buffer layer (including gallium) thinner to achieve the luminous efficiency requirement of the light-emitting element.

[0059] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A method for manufacturing a light-emitting element, characterized in that: include: Providing light emitting diodes; as well as Applying an energy beam to the buffer layer of the light-emitting diode to form a surface roughness layer on the light-emitting diode, wherein the surface roughness layer includes a plurality of protruding microstructures, and the plurality of protruding microstructures are separated from each other; Wherein, the height of the plurality of protruding microstructures is in the range of 10 nanometers to 100 nanometers, the width of the plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers, and the spacing between two adjacent plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers.

2. The method for manufacturing a light emitting element according to claim 1, characterized in that: The power density of the energy beam is greater than 0 mJ / cm2 and less than or equal to 2000 mJ / cm2.

3. The method for manufacturing a light emitting element according to claim 1, characterized in that: In cross-section, the shapes of the plurality of protruding microstructures include trapezoidal, triangular, semicircular, semi-elliptical or irregular shapes.

4. The method for manufacturing a light emitting element according to claim 1, characterized in that: The material of the buffer layer includes gallium nitride or aluminum.

5. A light emitting element, characterized in that: include: Light Emitting Diodes; as well as A surface roughness layer is formed on the light-emitting diode, wherein the surface roughness layer comprises a plurality of protruding microstructures, and the plurality of protruding microstructures are separated from each other; Wherein, the height of the plurality of protruding microstructures is in the range of 10 nanometers to 100 nanometers, the width of the plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers, and the spacing between two adjacent plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers.

6. The light emitting element according to claim 5, characterized in that In cross-section, the shapes of the plurality of protruding microstructures include trapezoidal, triangular, semicircular, semi-elliptical or irregular shapes.

7. The light emitting element according to claim 5, characterized in that The light emitting diode includes an epitaxial structure layer, a first-type electrode and a second-type electrode. The epitaxial structure layer includes a first-type semiconductor layer, a light emitting layer and a second-type semiconductor layer. The first-type electrode is electrically connected to the first-type semiconductor layer, and the second-type electrode is electrically connected to the second-type semiconductor layer.

8. The light emitting element according to claim 7, characterized in that The first-type electrode and the second-type electrode are located on the same side of the light-emitting diode.

9. The light emitting element according to claim 5, characterized in that The roughness of the surface roughness layer is in the range of 10 nanometers to 100 nanometers.

10. An electronic device, characterized in that: The electronic device comprises: A light-emitting element, the light-emitting element comprising: light emitting diodes; and A surface roughness layer is formed on the light-emitting diode, wherein the surface roughness layer comprises a plurality of protruding microstructures, and the plurality of protruding microstructures are separated from each other; wherein the height of the plurality of protruding microstructures is in the range of 10 nanometers to 100 nanometers, the width of the plurality of protruding microstructures is in the range of 10 nanometers to 1000 nanometers, and the spacing between two adjacent protruding microstructures is in the range of 10 nanometers to 1000 nanometers; and The driving circuit is electrically connected to the light emitting element.

11. The electronic device according to claim 10, characterized in that: Also includes: A substrate, the light emitting element is arranged on the substrate and is electrically connected to the driving circuit.

12. The electronic device according to claim 11, characterized in that: The substrate includes a plurality of electrode pads electrically connected to the first-type electrodes and the second-type electrodes of the light-emitting element respectively.

13. The electronic device according to claim 12, characterized in that: Also includes: The electrical connection medium is disposed between one of the plurality of electrode pads and the first-type electrode, and between another one of the plurality of electrode pads and the second-type electrode.

14. The electronic device according to claim 13, characterized in that: The electrical connection medium includes anisotropic conductive adhesive.

Images