Semiconductor device

Abstract

This semiconductor device is provided with: a semiconductor element having a semiconductor layer and a first electrode disposed on one side in the thickness direction of the semiconductor layer; a first conductive member bonded to the first electrode; a first conductive member bonded to the semiconductor element from the other side in the thickness direction; and a sealing resin having a first resin surface facing the one side in the thickness direction and a second resin surface facing the other side, the sealing resin covering at least a portion of each of the first conductive member and the second conductive member and the semiconductor element. The first electrode includes a first metal layer containing a metal having a higher thermal conductivity than the solder.

Description

Technical Field

[0001] The present disclosure relates to a semiconductor device. Background Art

[0002] Patent document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in the document includes a conductor, a semiconductor element, a conductive component, and a sealing resin. The semiconductor element is mounted on the conductor. The semiconductor element has an electrode. The conductive component is joined to the electrode via solder. The sealing resin covers at least a portion of each of the conductor, the semiconductor element, and the conductive component.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2021-158180 Summary of the invention

[0006] Problems to be solved by the invention

[0007] When a semiconductor device is operating, the semiconductor element repeatedly generates heat. Part of the heat generated in the semiconductor layer of the semiconductor element is dissipated through the solder and the conductive component. If the amount of heat transferred per unit time (heat flux) from the semiconductor layer of the semiconductor element to the solder is insufficient, the temperature of the semiconductor element rises transiently. Due to this temperature rise, the proper operation of the semiconductor element may be impaired.

[0008] One object of the present disclosure is to provide a semiconductor device that is improved compared to the conventional semiconductor device. In particular, in view of the above situation, one object of the present disclosure is to provide a semiconductor device that can operate a semiconductor element more appropriately.

[0009] Solutions to Solve Problems

[0010] A semiconductor device provided by one embodiment of the present disclosure includes: a semiconductor element having a semiconductor layer and a first electrode disposed on a first side in a thickness direction of the semiconductor layer; a first conductive component bonded to the first electrode; a second conductive component bonded to the semiconductor element from a second side in the thickness direction; and a sealing resin having a first resin surface facing the first side in the thickness direction and a second resin surface facing the second side, and covering at least a portion of each of the first conductive component and the second conductive component and the semiconductor element. The first electrode includes a first metal layer containing a metal having a higher thermal conductivity than solder.

[0011] Effects of the Invention

[0012] According to the above configuration, it is possible to provide a semiconductor device capable of operating a semiconductor element more appropriately.

[0013] Other features and advantages of the present disclosure will become more apparent from the following detailed description made with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a perspective view showing a semiconductor device according to the first embodiment of the present disclosure.

[0015] Figure 2 It is a perspective view showing a main part of a semiconductor device according to a first embodiment of the present disclosure.

[0016] Figure 3 It is a plan view showing the semiconductor device according to the first embodiment of the present disclosure.

[0017] Figure 4 It is a plan view showing a main part of the semiconductor device according to the first embodiment of the present disclosure.

[0018] Figure 5 It is a bottom view showing the semiconductor device according to the first embodiment of the present disclosure.

[0019] Figure 6 It is a bottom view showing a main part of the semiconductor device according to the first embodiment of the present disclosure.

[0020] Figure 7 It is a side view showing the semiconductor device according to the first embodiment of the present disclosure.

[0021] Figure 8 It is along Figure 4 A cross-sectional view taken along line VIII-VIII.

[0022] Fig. 9 It is along Figure 4 A cross-sectional view taken along line IX-IX.

[0023] Fig.10 It is a cross-sectional view schematically showing a main part of a first embodiment of a joint structure included in a semiconductor device of the present disclosure.

[0024] Fig.11 It is a cross-sectional view schematically showing a main part of an example of a junction structure included in the semiconductor device according to the first embodiment of the present disclosure.

[0025] Fig.12 It is a cross-sectional view schematically showing a main part of another example of the junction structure included in the semiconductor device according to the first embodiment of the present disclosure.

[0026] Fig.13 It is a cross-sectional view schematically showing a main part of another example of the junction structure included in the semiconductor device according to the first embodiment of the present disclosure.

[0027] Fig.14 It is a cross-sectional view schematically showing a main part of another example of the junction structure included in the semiconductor device according to the first embodiment of the present disclosure.

[0028] Fig.15 It is a cross-sectional view showing a first modified example of the semiconductor device according to the first embodiment of the present disclosure.

[0029] Fig.16 It is a perspective view showing a semiconductor device according to a second embodiment of the present disclosure.

[0030] Fig.17 It is a perspective view showing a main part of a semiconductor device according to a second embodiment of the present disclosure.

[0031] Fig.18 It is a plan view showing a semiconductor device according to a second embodiment of the present disclosure.

[0032] Fig.19 It is a plan view showing a main part of a semiconductor device according to a second embodiment of the present disclosure.

[0033] Fig. 20 It is a bottom view showing a semiconductor device according to a second embodiment of the present disclosure.

[0034] Fig.21 It is a bottom view showing a main part of a semiconductor device according to a second embodiment of the present disclosure.

[0035] Fig. 22 It is along Fig.21 A cross-sectional view of line XXII-XXII.

[0036] Fig.23 It is along Fig.21 A cross-sectional view along line XXIII-XXIII.

[0037] Fig.24 It is a cross-sectional view showing a first modified example of the semiconductor device according to the second embodiment of the present disclosure.

[0038] Fig.25 It is a cross-sectional view showing a second modified example of the semiconductor device according to the second embodiment of the present disclosure. DETAILED DESCRIPTION

[0039] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0040] The terms “first”, “second”, and “third” in the present disclosure are used merely for identification, and are not intended to place an order on these objects.

[0041] In the present disclosure, unless otherwise specified, “something A is formed on something B” and “something A is formed on something B” include “a situation where something A is directly formed on something B” and “a situation where something A is formed on something B while there is something else between something A and something B”. Similarly, unless otherwise specified, “something A is configured on something B” and “something A is configured on something B” include “a situation where something A is directly configured on something B” and “a situation where something A is configured on something B while there is something else between something A and something B”. Similarly, unless otherwise specified, “something A is located on something B” includes “a situation where something A is in contact with something B and something A is located on something B” and “a situation where something A is located on something B while there is something else between something A and something B”. In addition, unless otherwise specified, “something A overlaps something B when viewed in a certain direction” includes “something A overlaps with everything B” and “something A overlaps with a portion of something B”. In addition, in the present disclosure, “something A faces direction B (a first side or a second side opposite to the first side)” is not limited to the case where the angle of the surface A relative to the direction B is 90°, and also includes the case where the surface A is inclined relative to the direction B.

[0042] Figures 1 to 10 : shows a semiconductor device according to the first embodiment of the present disclosure. The semiconductor device A1 of the present embodiment includes a semiconductor element 1, a first conductive component 2, a second conductive component 3, a third conductive component 4, a first bonding layer 7, a second bonding layer 8, and a sealing resin 9. The use of the semiconductor device A1 is not limited in any way, and it can be used, for example, in electronic devices such as DC-DC converters that have a power conversion circuit.

[0043] Figure 1 It is a perspective view showing the semiconductor device A1. Figure 2 It is a perspective view showing the main parts of the semiconductor device A1. Figure 3 It is a top view showing the semiconductor device A1. Figure 4 It is a plan view showing the main parts of the semiconductor device A1. Figure 5 It is a bottom view showing the semiconductor device A1. Figure 6 It is a bottom view showing the main parts of the semiconductor device A1. Figure 7 It is a side view showing the semiconductor device A1. Figure 8 It is along Figure 4 A cross-sectional view taken along line VIII-VIII. Fig. 9 It is along Figure 4A cross-sectional view taken along line IX-IX. Fig.10 It is a cross-sectional view schematically showing a main part of an example of a joint structure included in the semiconductor device A1.

[0044] In these figures, the thickness direction of the present disclosure is defined as thickness direction z. The first side of the thickness direction z is referred to as the z1 side, and the second side of the z direction opposite to the first side is referred to as the z2 side. In addition, a direction orthogonal to the thickness direction z is defined as a first direction x. The first side of the first direction x is referred to as the x1 side, and the second side opposite to the x1 side is referred to as the x2 side. In addition, a direction orthogonal to the thickness direction z and the first direction x is defined as a second direction y. The first side of the second direction y is referred to as the y1 side, and the second side opposite to the y1 side is referred to as the y2 side.

[0045] The semiconductor element 1 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, the semiconductor element 1 may also be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of the semiconductor device A1, the semiconductor element 1 is an n-channel MOSFET with a vertical structure. Figure 2 , Figure 4 as well as Figure 8 to Figure 10 As shown, the semiconductor element 1 includes a semiconductor layer 10 , a first electrode 11 , a second electrode 12 and a third electrode 13 .

[0046] Fig.10 The bonding structure B1 included in the semiconductor device A1 is schematically shown. The bonding structure B1 has a structure in which a semiconductor element 1, a first conductive component 2, a second conductive component 3, a first bonding layer 7, and a second bonding layer 8 are bonded to each other. In this figure, for ease of understanding, the first conductive component 2 and the second conductive component 3 are shown in a form exposed from the semiconductor element 1 in a plane including the first direction x and the second direction y. In addition, the fifth conductive component 6 and the first bonding layer 7 are shown in a cross-sectional trapezoidal shape that bonds the semiconductor element 1 to the first conductive component 2 or the second conductive component 3.

[0047] The semiconductor layer 10 is a layer containing a semiconductor. The composition of the semiconductor includes, for example, Si (silicon), SiC (silicon carbide), etc. In addition, unlike the present embodiment, when the semiconductor element 1 is a switching element of a horizontal structure, the semiconductor layer 10 includes, for example, GaN (gallium nitride).

[0048] like Fig.10As shown, the first electrode 11 is arranged on the z1 side in the thickness direction z of the semiconductor layer 10. A current corresponding to the power converted by the semiconductor element 1 flows through the first electrode 11. That is, the first electrode 11 corresponds to the source electrode of the semiconductor element 1.

[0049] like Fig.10 As shown, the second electrode 12 is arranged on the z2 side in the thickness direction z of the semiconductor layer 10. A current corresponding to the power before conversion by the semiconductor element 1 flows through the second electrode 12. That is, the second electrode 12 corresponds to the drain electrode of the semiconductor element 1.

[0050] like Figure 2 As shown, the third electrode 13 is arranged on the same z1 side as the first electrode 11 in the thickness direction z. A gate voltage for driving the semiconductor element 1 is applied to the third electrode 13. That is, the third electrode 13 is equivalent to the gate electrode of the semiconductor element 1. When viewed in the thickness direction z, the area of ​​the third electrode 13 is smaller than that of the first electrode 11.

[0051] like Fig.10 As shown, the first electrode 11 includes a first metal layer 111, a second metal layer 112, a first intermediate metal layer 113 and a first barrier layer 114. The first metal layer 111 contains a metal with a higher thermal conductivity than the solder. Preferably, the first metal layer 111 is mainly composed of a metal with a higher thermal conductivity than the solder. The first metal layer 111, for example, contains Ag (silver) or Cu (copper). In the following description, the case where the first metal layer 111 is mainly composed of Ag (silver) is used as an example. As a specific example of the first metal layer 111 with Ag (silver) as the main component, for example, an Ag (silver) sintered layer, an Ag (silver) paste layer, an Ag (silver) layer formed by a film forming technology such as sputtering, and an Ag (silver) plated layer can be cited. In the example shown in the figure, the first metal layer 111 constitutes the surface layer of the first electrode 11.

[0052] The second metal layer 112 is interposed between the semiconductor layer 10 and the first metal layer 111. The second metal layer 112 is, for example, a layer containing Al (aluminum).

[0053] The thickness t111 of the first metal layer 111 and the thickness t112 of the second metal layer 112 are not limited in any way. In this embodiment, the thickness t111 is thicker than the thickness t112. The thickness t111 is, for example, 5 μm to 40 μm. The thickness t112 is, for example, 2 μm to 8 μm.

[0054] The first intermediate metal layer 113 is disposed between the first metal layer 111 and the second metal layer 112. The first intermediate metal layer 113 includes, for example, Ti (titanium), Ni (nickel), etc. The thickness of the first intermediate metal layer 113 is, for example, not less than 0.1 μm and not more than 0.6 μm. The first intermediate metal layer 113 is, for example, a layer for preventing the second metal layer 112 from being damaged when the first metal layer 111 is formed on the second metal layer 112.

[0055] The first barrier layer 114 is interposed between the second metal layer 112 and the semiconductor layer 10. The first barrier layer 114 includes, for example, TiN (titanium nitride). The thickness of the first barrier layer 114 is, for example, greater than or equal to 0.01 μm and less than or equal to 0.1 μm. The first barrier layer 114 is, for example, a layer for preventing the semiconductor layer 10 from being damaged when the second metal layer 112 is formed on the semiconductor layer 10.

[0056] The second electrode 12 of this embodiment includes a fourth metal layer 122 and a second barrier layer 124. The fourth metal layer 122 is, for example, a layer containing Al (aluminum). In this embodiment, the fourth metal layer 122 constitutes the surface layer of the second electrode 12. The thickness of the fourth metal layer 122 is not limited in any way and can be the same as or different from the thickness t112 of the second metal layer 112.

[0057] The second barrier layer 124 is interposed between the fourth metal layer 122 and the semiconductor layer 10. The second barrier layer 124 includes, for example, TiN (titanium nitride). The thickness of the second barrier layer 124 is, for example, not less than 0.01 μm and not more than 0.1 μm. The second barrier layer 124 is, for example, a layer for preventing the semiconductor layer 10 from being damaged when the fourth metal layer 122 is formed on the semiconductor layer 10.

[0058] The first conductive member 2 includes a portion disposed on the z1 side in the thickness direction z with respect to the semiconductor element 1. The first conductive member 2 includes a conductive material such as metal, for example, Cu (copper).

[0059] like Figures 1 to 10 As shown, the first conductive component 2 has a first main surface 201 and a second main surface 202. The first main surface 201 is a surface facing the z1 side of the thickness direction z. The second main surface 202 is a surface facing the z2 side of the thickness direction z. The semiconductor element 1 is conductively bonded to the second main surface 202. Figure 8 and Fig. 9 As shown, in this example, the first main surface 201 is covered with a sealing resin 9 .

[0060] like Figures 1 to 9 As shown, the first conductive component 2 has a first island portion 211 , a plurality of first terminal portions 212 , and a recessed portion 221 .

[0061] The first island portion 211 is a portion that is conductively bonded to the semiconductor element 1. The first island portion 211 includes a portion of the first main surface 201 and a portion of the second main surface 202. The shape and size of the first island portion 211 are not limited in any way, but in the example shown in the figure, the first island portion 211 has a shape that overlaps the entire first electrode 11 when viewed in the thickness direction z, and also has a shape that exposes the third electrode 13.

[0062] The plurality of first terminal portions 212 are connected to the first island portion 211 on the y2 side of the second direction y. The plurality of first terminal portions 212 extend along the second direction y when viewed in the thickness direction z, and are arranged at intervals in the first direction x. There is no limitation on the number of the plurality of first terminal portions 212, and it can be three as shown in the example shown in the figure, or it can be two, or it can be four or more. In addition, it can also be a structure with only one first terminal portion 212. Figure 1 , Figure 2 as well as Figure 8 As shown, the first terminal portion 212 includes a portion connected to the first island portion 211 and covered by the sealing resin 9, a portion protruding from the sealing resin 9 to the y2 side of the second direction y, a portion folded back to the z2 side of the thickness direction z, and a portion located on the z2 side of the thickness direction z. The plurality of first terminal portions 212 are used as terminals when mounting the semiconductor device A1.

[0063] The recessed portion 221 is a portion recessed from the first main surface 201 toward the z2 side in the thickness direction z. The recessed portion 221 overlaps with the first island portion 211 when viewed in the thickness direction z.

[0064] like Fig.10 As shown, in this example, the first conductive component 2 includes a first substrate 21 and a first plating layer 22. The first substrate 21 is a portion constituting the main body of the first conductive component 2, and includes, for example, Cu (copper). The first plating layer 22 is formed at an appropriate position of the first substrate 21, and includes, for example, Ag (silver). In this example, the first plating layer 22 is provided at least at a portion bonded to the semiconductor element 1 via the first bonding layer 7.

[0065] The first bonding layer 7 conducts and bonds the first electrode 11 of the semiconductor element 1 to the second main surface 202 of the first conductive component 2. In this example, the first bonding layer 7 conducts and bonds the first metal layer 111 to the first plated layer 22. The specific structure of the first bonding layer 7 is not limited in any way, and it is composed of, for example, a conductive bonding material such as solder or Ag (silver) plating. The thickness t7 of the first bonding layer 7 is not limited in any way, and in this embodiment, it is thinner than the thickness t111 of the first metal layer 111. The thickness t7 is, for example, not less than 4 μm and not more than 30 μm.

[0066] The second conductive member 3 is disposed on the z2 side in the thickness direction z with respect to the semiconductor element 1. The second conductive member 3 is made of a conductive material such as metal, for example, Cu (copper).

[0067] like Figures 1 to 10 As shown, the second conductive component 3 has a third main surface 301 and a fourth main surface 302. The third main surface 301 is a surface facing the z1 side of the thickness direction z. The fourth main surface 302 is a surface facing the z2 side of the thickness direction z. The semiconductor element 1 is mounted on the third main surface 301. Figure 5 and Figure 6 As shown, the fourth main surface 302 is exposed from the sealing resin 9 .

[0068] like Figures 1 to 9 As shown, the second conductive component 3 has a second island portion 311 , a second terminal portion 312 , a thin-walled extension portion 321 and a through hole 322 .

[0069] The second island portion 311 is a portion where the entire or a portion of the semiconductor element 1 is mounted. The second island portion 311 includes a portion of the third main surface 301 and a portion of the fourth main surface 302. The shape and size of the second island portion 311 are not limited in any way, and in the example shown in the figure, it is substantially rectangular when viewed in the thickness direction z.

[0070] The second terminal portion 312 is a portion connected to the second island portion 311 on the y1 side in the second direction y. The second terminal portion 312 includes a portion of the third main surface 301 and a portion of the fourth main surface 302. The second terminal portion 312 can be used as a terminal when mounting the semiconductor device A1.

[0071] The thin-walled extension portion 321 is a portion including the third main surface 301 and excluding the fourth main surface 302. The thickness of the thin-walled extension portion 321 in the thickness direction z is thinner than the thickness of the second island portion 311 in the thickness direction z. The thin-walled extension portion 321 extends from the second island portion 311. In the example shown in the figure, the thin-walled extension portion 321 extends from the second island portion 311 to the x1 side and the x2 side in the first direction x and to the y2 side in the second direction y.

[0072] The through hole 322 penetrates the second conductive component 3 in the thickness direction z. In the present embodiment, a portion of the sealing resin 9 is filled in the through hole 322. In addition, the size of the cross section of the through hole 322 perpendicular to the thickness direction z is larger on the z2 side than on the z1 side in the thickness direction z. This can, for example, have an effect of preventing the second conductive component 3 from falling off from the sealing resin 9.

[0073] like Fig.10As shown, in this example, the second conductive component 3 includes a second substrate 31 and a second plating layer 32. The second substrate 31 is a portion constituting the main body of the second conductive component 3, and includes, for example, Cu (copper). The second plating layer 32 is formed at an appropriate portion of the second substrate 31, and includes, for example, Ag (silver). In this example, the second plating layer 32 is provided at least at a portion bonded to the semiconductor element 1 via the second bonding layer 8.

[0074] The second bonding layer 8 conducts and bonds the second electrode 12 of the semiconductor element 1 to the third main surface 301 of the second conductive component 3. In this example, the second bonding layer 8 conducts and bonds the fourth metal layer 122 to the second plated layer 32. There is no limitation on the specific structure of the second bonding layer 8, and it is composed of a conductive bonding material such as solder or Ag (silver) plating. In addition, unlike the present embodiment, when the semiconductor element 1 does not have the second electrode 12 on the z2 side in the thickness direction z, the second bonding layer 8 may also be a structure that only bonds the semiconductor element 1 to the second conductive component 3 without conducting them to each other.

[0075] The third conductive member 4 includes a portion disposed on the z1 side in the thickness direction z with respect to the semiconductor element 1. The third conductive member 4 includes a conductive material such as metal, for example, Cu (copper).

[0076] like Figure 2 to Figure 7 As shown, the third conductive component 4 has a pad portion 411 and a third terminal portion 412 .

[0077] The pad portion 411 is a portion that is conductively bonded to the third electrode 13 of the semiconductor element 1. The shape and size of the pad portion 411 are not limited in any way, but in the example shown in the figure, the pad portion 411 has a shape that overlaps a portion of the third electrode 13 when viewed in the thickness direction z. The pad portion 411 is conductively bonded to the third electrode 13 by solder or the like (not shown).

[0078] The third terminal portion 412 is connected to the pad portion 411 on the y2 side of the second direction y. The third terminal portion 412 extends along the second direction y when viewed in the thickness direction z. Figure 1 , Figure 2 as well as Figure 7 As shown, the third terminal portion 412 has a portion connected to the pad portion 411 and covered by the sealing resin 9, a portion protruding from the sealing resin 9 to the y2 side of the second direction y, a portion folded back to the z2 side of the thickness direction z, and a portion located on the z2 side of the thickness direction z. When viewed in the first direction x, the third terminal portion 412 has a shape and size that substantially overlaps with the first terminal portion 212. The third terminal portion 412 is used as a terminal when mounting the semiconductor device A1.

[0079] The sealing resin 9 covers a portion of each of the first conductive component 2, the second conductive component 3, and the third conductive component 4, as well as the semiconductor element 1. The sealing resin 9 has electrical insulation properties. The sealing resin 9 includes, for example, a black epoxy resin containing a filler. The shape of the sealing resin 9 is not limited in any way. Figures 1 to 9 As shown, the sealing resin 9 of the present embodiment has a first resin surface 91 , a second resin surface 92 , a third resin surface 93 , a fourth resin surface 94 , a fifth resin surface 95 , and a sixth resin surface 96 .

[0080] The first resin surface 91 is a surface facing the z1 side of the thickness direction z. The second resin surface 92 is a surface facing the z2 side of the thickness direction z. The fourth main surface 302 of the second conductive component 3 is exposed from the second resin surface 92. In the example shown in the figure, the first resin surface 91 and the second resin surface 92 are flat surfaces, but are not limited to this, and may be, for example, curved surfaces, bent surfaces, etc. In the example shown in the figure, the second resin surface 92 and the fourth main surface 302 are coplanar with each other.

[0081] The third resin surface 93 is a surface facing the x1 side of the first direction x. The fourth resin surface 94 is a surface facing the x2 side of the first direction x. In the illustrated example, the third resin surface 93 and the fourth resin surface 94 are slightly curved surfaces, but are not limited thereto, and may be, for example, curved surfaces, flat surfaces, etc.

[0082] The fifth resin surface 95 is a surface facing the y1 side of the second direction y. The sixth resin surface 96 is a surface facing the y2 side of the second direction y. In the illustrated example, the fifth resin surface 95 and the sixth resin surface 96 are slightly curved surfaces, but are not limited thereto, and may be, for example, curved surfaces, flat surfaces, etc. In the present embodiment, the plurality of first terminal portions 212 and the third terminal portion 412 protrude from the sixth resin surface 96.

[0083] Next, the operation of the semiconductor device A1 will be described.

[0084] According to this embodiment, Fig.10 As shown, the first electrode 11 includes a first metal layer 111. The first metal layer 111 contains a metal having a higher thermal conductivity than the solder. Therefore, if the semiconductor layer 10 of the semiconductor element 1 repeatedly generates heat when the semiconductor device A1 is in operation, the heat is quickly transferred from the semiconductor layer 10 through the first metal layer 111, thereby increasing the heat flux of the heat dissipated from the semiconductor layer 10. Therefore, it is possible to suppress the excessive transient rise in the temperature of the semiconductor layer 10, thereby enabling the semiconductor element 1 to operate more appropriately. In particular, when the semiconductor element 1 is a switching element of a vertical structure, when the semiconductor device A1 is in operation, the heat generated at the portion of the semiconductor layer 10 located on the z1 side in the thickness direction z becomes significant. As a countermeasure to suppress the temperature rise caused by such a tendency of heat generation, it is reasonable to have the first metal layer 111.

[0085] The first metal layer 111 includes Ag (silver), which can further increase the heat flux of heat dissipation from the semiconductor layer 10. Preferably, the first metal layer 111 is mainly composed of Ag (silver) to increase the heat flux. The structure of the first metal layer 111, for example, a sintered layer of Ag (silver), is suitable for processing the shape and thickness of the first metal layer 111 into a desired state.

[0086] The thickness t111 of the first metal layer 111 is thicker than the thickness t112 of the second metal layer 112. Thus, the heat from the semiconductor layer 10 can be more quickly transferred to the first metal layer 111 via the second metal layer 112. In addition, the thickness t7 of the first bonding layer 7 is thinner than the thickness t111 of the first metal layer 111. Thus, the heat transferred to the first metal layer 111 can be more efficiently transferred to the first conductive component 2, which is preferable for promoting heat dissipation from the semiconductor layer 10.

[0087] Figure 11 to Figure 25 The modified examples and other embodiments of the present invention are shown. It should be noted that in these figures, the same or similar elements as those in the above-mentioned embodiments are marked with the same reference numerals as those in the above-mentioned embodiments. In addition, the structures of each part in each modified example and each embodiment can be appropriately combined with each other within the range that no technical contradiction occurs.

[0088] Figure 11 to Figure 14 Another example of the bonding structure included in the semiconductor device A1 is schematically shown. Various bonding structures including the above-mentioned bonding structure B1 and bonding structures B2 to B5 described below can be appropriately used for various semiconductor devices including the semiconductor device A1 and the semiconductor devices described below.

[0089] Fig.11 The bonding structure B2 shown is mainly different from the bonding structure B1 described above in that the structure of the second electrode 12 is different. The second electrode 12 of this example includes a third metal layer 121, a fourth metal layer 122, a second intermediate metal layer 123 and a second barrier layer 124. The third metal layer 121 contains a metal having a higher thermal conductivity than the solder. Preferably, the third metal layer 121 is mainly composed of a metal having a higher thermal conductivity than the solder. The third metal layer 121, for example, contains Ag (silver) or Cu (copper). In the following description, the case where the third metal layer 121 is mainly composed of Ag (silver) is described as an example. As a specific example of the third metal layer 121 with Ag (silver) as the main component, for example, an Ag (silver) sintered layer, an Ag (silver) paste layer, an Ag (silver) layer formed by a film forming technique such as sputtering, and an Ag (silver) plated layer can be cited. In the example shown in the figure, the third metal layer 121 constitutes the surface layer of the second electrode 12.

[0090] The fourth metal layer 122 is interposed between the semiconductor layer 10 and the third metal layer 121. The fourth metal layer 122 is, for example, a layer containing Al (aluminum).

[0091] The thickness t121 of the third metal layer 121 and the thickness t122 ​​of the fourth metal layer 122 are not limited in any way. In this embodiment, the thickness t121 is thicker than the thickness t122. The thickness t121 is, for example, 5 μm to 10 μm. The thickness t122 ​​is, for example, 2 μm to 8 μm.

[0092] The second intermediate metal layer 123 is disposed between the third metal layer 121 and the fourth metal layer 122. The second intermediate metal layer 123 includes, for example, Ti (titanium), Ni (nickel), etc. The thickness of the second intermediate metal layer 123 is, for example, not less than 0.1 μm and not more than 0.6 μm. The second intermediate metal layer 123 is, for example, a layer for preventing the fourth metal layer 122 from being damaged when the third metal layer 121 is formed on the fourth metal layer 122.

[0093] The second barrier layer 124 is interposed between the fourth metal layer 122 and the semiconductor layer 10. The second barrier layer 124 includes, for example, TiN (titanium nitride). The thickness of the second barrier layer 124 is, for example, not less than 0.01 μm and not more than 0.1 μm. The second barrier layer 124 is, for example, a layer for preventing the semiconductor layer 10 from being damaged when the fourth metal layer 122 is formed on the semiconductor layer 10.

[0094] The second bonding layer 8 has a structure similar to the second bonding layer 8 of the bonding structure B1 described above. The thickness t8 of the second bonding layer 8 is not limited in any way, and in this embodiment, is thinner than the thickness t121 of the third metal layer 121. The thickness t8 is, for example, 5 μm to 30 μm.

[0095] According to this example, the heat flux of heat dissipated from the semiconductor element 1 can also be increased, so that the semiconductor element 1 can be operated more appropriately. In addition, according to this example, the second electrode 12 includes the third metal layer 121. The third metal layer 121 contains a metal with a higher thermal conductivity than the solder. Therefore, if the semiconductor layer 10 of the semiconductor element 1 repeatedly generates heat during the operation of the semiconductor device A1, the heat is quickly transferred from the semiconductor layer 10 through the third metal layer 121, so that the heat flux of heat dissipated from the semiconductor layer 10 can be increased. Therefore, the temperature of the semiconductor layer 10 can be further suppressed from transiently rising excessively.

[0096] The third metal layer 121 includes Ag (silver), which can further increase the heat flux of heat dissipation from the semiconductor layer 10. Preferably, the third metal layer 121 is mainly composed of Ag (silver) to increase the heat flux. The structure of the third metal layer 121, for example, a sintered layer of Ag (silver), is suitable for processing the shape and thickness of the third metal layer 121 into a desired state.

[0097] The thickness t121 of the third metal layer 121 is thicker than the thickness t122 ​​of the fourth metal layer 122. Thus, the heat from the semiconductor layer 10 can be transferred to the third metal layer 121 more quickly via the fourth metal layer 122. In addition, the thickness t8 of the second bonding layer 8 is thinner than the thickness t121 of the third metal layer 121. Thus, the heat transferred to the third metal layer 121 can be transferred to the second conductive component 3 more efficiently, which is preferable for promoting heat dissipation from the semiconductor layer 10.

[0098] Fig.12 The bonding structure B3 shown is different from the bonding structure B2 described above mainly in that the structure of the first electrode 11 is different. The first electrode 11 of this example includes a first metal layer 111 and a first barrier layer 114, and the first metal layer 111 is formed on the first barrier layer 114. In this example, the thickness t111 is also thicker than the thickness t7. In the case of the structure of this example, the thickness t111 is, for example, greater than 5 μm and less than 40 μm.

[0099] According to this example, the heat flux of heat dissipation from the semiconductor element 1 can also be increased, so that the semiconductor element 1 can be operated more appropriately. In addition, according to this example, the heat from the semiconductor layer 10 can be directly transferred through the first metal layer 111. Thus, the effect of further increasing the heat flux of heat dissipation can be expected. In addition, by making the thickness t111 thicker, the heat capacity of the first metal layer 111 can be increased, thereby more reliably suppressing the transient temperature rise of the semiconductor layer 10.

[0100] Fig.13 The bonding structure B4 shown is different from the bonding structure B3 described above mainly in that the structure of the second electrode 12 is different. The second electrode 12 of this example includes a third metal layer 121 and a second barrier layer 124, and the third metal layer 121 is formed on the second barrier layer 124. In this example, the thickness t121 is also thicker than the thickness t8. In the case of the structure of this example, the thickness t121 is, for example, greater than 5 μm and less than 40 μm.

[0101] According to this example, the heat flux of heat dissipation from the semiconductor element 1 can also be increased, so that the semiconductor element 1 can be operated more appropriately. In addition, according to this example, the heat from the semiconductor layer 10 can be directly transferred through the third metal layer 121. Thus, the effect of further increasing the heat flux of heat dissipation can be expected. In addition, by making the thickness t121 thicker, the heat capacity of the third metal layer 121 can be increased, thereby more reliably suppressing the transient temperature rise of the semiconductor layer 10.

[0102] Fig.14The bonding structure B5 shown is different from the bonding structures B1 to B4 described above mainly in that it does not include the first bonding layer 7 and the second bonding layer 8. In this example, the first metal layer 111 of the first electrode 11 is directly bonded to the first plating layer 22 of the first conductive component 2. This structure can be exemplified by the following structure, that is, when the first metal layer 111 and the first plating layer 22 are both composed of the same metal as the main component, such as Ag (silver), the structure is bonded by solid phase diffusion bonding. Alternatively, when the first metal layer 111 is composed of an Ag (silver) sintered layer, the sintering paste for forming the first metal layer 111 can be placed on the first intermediate metal layer 113, and then the first conductive component 2 can be placed on the sintering paste, and then the sintering paste is sintered to form the first metal layer 111, thereby forming the first metal layer 111 and achieving bonding between the first electrode 11 and the first conductive component 2.

[0103] In addition, in this example, the third metal layer 121 of the second electrode 12 is directly bonded to the second plated layer 32 of the second conductive component 3. This structure can be exemplified by the following structure, that is, when the third metal layer 121 and the second plated layer 32 are both composed of the same metal such as Ag (silver) as the main component, the structure is bonded by solid phase diffusion bonding. Alternatively, when the third metal layer 121 is composed of an Ag (silver) sintered layer, a sintering paste for forming the third metal layer 121 can be placed on the second conductive component 3, and then the second intermediate metal layer 123 can be placed on the sintering paste, and then the sintering paste is sintered to form the third metal layer 121, and the bonding of the second electrode 12 and the second conductive component 3 is achieved.

[0104] According to this example, the heat flux of heat dissipation from the semiconductor element 1 can also be increased, so that the semiconductor element 1 can be operated more appropriately. In addition, according to this example, heat can be directly transferred from the first metal layer 111 to the first conductive component 2 without passing through the first bonding layer 7. As a result, the transient temperature rise in the semiconductor layer 10 can be further suppressed, and stable heat dissipation over a longer period of time can be promoted. In addition, heat can be directly transferred from the third metal layer 121 to the second conductive component 3 without passing through the second bonding layer 8. As a result, the transient temperature rise in the semiconductor layer 10 can be further suppressed, and stable heat dissipation over a longer period of time can be promoted.

[0105] Fig.15 A first modification of the semiconductor device A1 is shown. The semiconductor device A11 of this modification mainly differs from the semiconductor device A1 described above in the structures of the first conductive member 2 and the sealing resin 9 .

[0106] The first principal surface 201 of the first conductive member 2 of this modification is exposed from the first resin surface 91 of the sealing resin 9. The above-mentioned recessed portion 221 is not formed in the first conductive member 2. In addition, the first principal surface 201 and the first resin surface 91 are coplanar with each other.

[0107] According to this example, the heat flux from the semiconductor element 1 can be increased, so that the semiconductor element 1 can operate more appropriately. In addition, according to this example, heat can be more effectively dissipated from the first main surface 201 of the first conductive member 2 to the outside of the semiconductor device A11.

[0108] Figure 16 to Figure 23 A semiconductor device according to a second embodiment of the present invention is shown. A semiconductor device A2 of this embodiment includes a semiconductor element 1 , a first conductive member 2 , a second conductive member 3 , a third conductive member 4 , a fourth conductive member 5 , a fifth conductive member 6 , and a sealing resin 9 .

[0109] The first conductive component 2 includes a first island portion 211 and a connecting portion 213. The first island portion 211 includes a portion of each of the first main surface 201 and the second main surface 202, and is conductively bonded to the first electrode 11 of the semiconductor element 1. The connecting portion 213 is a portion located on the y2 side in the second direction y relative to the first island portion 211. The connecting portion 213 includes a portion extending from the first island portion 211 to the y2 side in the second direction y and a portion further extending to the z2 side in the thickness direction z.

[0110] The first principal surface 201 of the first conductive member 2 is exposed from the first resin surface 91 of the sealing resin 9. In the example shown in the figure, the first principal surface 201 and the first resin surface 91 are flush with each other.

[0111] The fourth conductive component 5 is arranged on the z2 side in the thickness direction z relative to the first conductive component 2. The fourth conductive component 5 includes a conductive material such as metal, for example, Cu (copper). In addition, a plating layer (not shown) may be provided at an appropriate position of the fourth conductive component 5. The fourth conductive component 5 is conductively bonded to the connection portion 213 of the semiconductor element 1 through a conductive bonding material 59 such as solder.

[0112] like Fig.16 , Fig.17 , Figure 19 to Figure 22 As shown, the fourth conductive component 5 has a seventh main surface 501 and an eighth main surface 502. The seventh main surface 501 is a surface facing the z1 side of the thickness direction z. The eighth main surface 502 is a surface facing the z2 side of the thickness direction z. The connecting portion 213 of the first conductive component 2 is conductively bonded to the seventh main surface 501 through the conductive bonding material 59. The seventh main surface 501 is covered with the sealing resin 9. The eighth main surface 502 is exposed from the second resin surface 92 of the sealing resin 9. In this example, the eighth main surface 502 and the second resin surface 92 are coplanar with each other.

[0113] The fourth conductive member 5 includes a pad portion 511 , a plurality of fourth terminal portions 512 , and a thin-walled extension portion 521 .

[0114] The pad portion 511 is a portion that is conductively bonded to the first conductive component 2. The pad portion 511 includes a portion of the seventh main surface 501 and a portion of the eighth main surface 502. The shape and size of the pad portion 511 are not limited in any way, but in the example shown in the figure, it is a long rectangular shape with the first direction x as the longitudinal direction when viewed in the thickness direction z.

[0115] The plurality of fourth terminal portions 512 are connected to the pad portion 511 on the y2 side of the second direction y. The plurality of fourth terminal portions 512 extend along the second direction y when viewed in the thickness direction z, and are arranged at intervals in the first direction x. There is no limitation on the number of the plurality of fourth terminal portions 512, and it can be three as shown in the example shown in the figure, or it can be two, or it can be four or more. In addition, it can also be a structure with only one fourth terminal portion 512. Fig. 22 As shown, the fourth terminal portion 512 is exposed from the second resin surface 92 and the sixth resin surface 96 of the sealing resin 9. The front end surface of the fourth terminal portion 512 is coplanar with the sixth resin surface 96. The plurality of fourth terminal portions 512 are used as terminals when mounting the semiconductor device A2.

[0116] The thin-walled extension portion 521 is a portion including the seventh main surface 501 and excluding the eighth main surface 502. The thickness of the thin-walled extension portion 521 in the thickness direction z is thinner than the thickness of the pad portion 511 in the thickness direction z. The thin-walled extension portion 521 extends from the pad portion 511. In the example shown in the figure, the thin-walled extension portion 521 extends from the pad portion 511 to the x1 side and the x2 side in the first direction x and to the y1 side in the second direction y.

[0117] like Figure 16-17 , Figure 19 to Figure 23 As shown, the second conductive component 3 of the present embodiment includes a second island portion 311 , a plurality of second terminal portions 312 , a thin-walled extension portion 321 , and a thick-walled extension portion 323 .

[0118] The second island portion 311 is a portion where the entire or a part of the semiconductor element 1 is mounted, and has a structure similar to the second island portion 311 of the semiconductor device A1.

[0119] The plurality of second terminals 312 are connected to the second island 311 on the y1 side in the second direction y. The second terminal 312 includes a portion of the third main surface 301 and a portion of the fourth main surface 302. The second terminal 312 can be used as a terminal when mounting the semiconductor device A1.

[0120] The plurality of second terminal portions 312 are connected to the second island portion 311 on the y1 side of the second direction y. The plurality of second terminal portions 312 extend along the second direction y when viewed in the thickness direction z, and are arranged at intervals in the first direction x. There is no limitation on the number of the plurality of second terminal portions 312, and it can be four as shown in the example shown in the figure, or it can be two, three, or more than five. In addition, it can also be a structure with only one second terminal portion 312. Fig. 22 As shown, the second terminal portion 312 is exposed from the second resin surface 92 and the fifth resin surface 95 of the sealing resin 9. The front end surface of the second terminal portion 312 is coplanar with the fifth resin surface 95. The plurality of second terminal portions 312 are used as terminals when mounting the semiconductor device A2.

[0121] The thick-walled extension portion 323 protrudes from the second island portion 311 in the first direction x. The thick-walled extension portion 323 includes a portion of the third main surface 301 and a portion of the fourth main surface 302. In the example shown in the figure, the second conductive component 3 has two thick-walled extension portions 323. The two thick-walled extension portions 323 protrude from the second island portion 311 to both sides of the first direction x. The two thick-walled extension portions 323 are exposed from the second resin surface 92, the third resin surface 93, and the fourth resin surface 94 of the sealing resin 9. The front end surfaces of the two thick-walled extension portions 323 are coplanar with the third resin surface 93 and the fourth resin surface 94.

[0122] The third conductive component 4 is arranged on the y2 side of the second direction y relative to the second conductive component 3, and is arranged on the x1 side of the first direction x relative to the fourth conductive component 5. The third conductive component 4 includes a conductive material such as metal, for example, Cu (copper). In addition, a plating layer (not shown) may be provided at an appropriate position of the third conductive component 4. A fifth conductive component 6 is connected to the third conductive component 4.

[0123] like Fig.16 , Fig.17 , Figure 19 to Figure 21 As shown, the third conductive component 4 has a fifth main surface 401 and a sixth main surface 402. The fifth main surface 401 is a surface facing the z1 side of the thickness direction z. The sixth main surface 402 is a surface facing the z2 side of the thickness direction z. The fifth conductive component 6 is connected to the fifth main surface 401. The fifth main surface 401 is covered with a sealing resin 9. The sixth main surface 402 is exposed from the second resin surface 92 of the sealing resin 9. In this example, the sixth main surface 402 and the second resin surface 92 are coplanar with each other.

[0124] The third conductive member 4 includes a pad portion 411 , a third terminal portion 412 , and a thin-walled extension portion 421 .

[0125] The pad portion 411 is a portion connected to the fifth conductive component 6. The pad portion 411 includes a portion of the fifth main surface 401 and a portion of the sixth main surface 402. The shape and size of the pad portion 411 are not limited in any way. In the example shown in the figure, the pad portion 411 is rectangular when viewed in the thickness direction z. In addition, the size of the pad portion 411 in the first direction x is smaller than the size of the pad portion 511 in the first direction x.

[0126] The third terminal portion 412 is connected to the pad portion 411 on the y2 side of the second direction y. The third terminal portion 412 extends along the second direction y when viewed in the thickness direction z. There is no limitation on the number of the third terminal portions 412, and it can be one as in the example shown in the figure, or it can be more than two. The third terminal portion 412 is exposed from the second resin surface 92 and the sixth resin surface 96 of the sealing resin 9. The front end surface of the third terminal portion 412 is coplanar with the sixth resin surface 96. The plurality of third terminal portions 412 are used as terminals when mounting the semiconductor device A2.

[0127] The thin-walled extension portion 421 is a portion including the fifth main surface 401 and excluding the sixth main surface 402. The thickness of the thin-walled extension portion 421 in the thickness direction z is thinner than the thickness of the pad portion 411 in the thickness direction z. The thin-walled extension portion 421 extends from the pad portion 411. In the example shown in the figure, the thin-walled extension portion 421 extends from the pad portion 411 to the x1 side and the x2 side in the first direction x and to the y1 side in the second direction y.

[0128] The fifth conductive component 6 is connected to the third electrode 13 of the semiconductor element 1 and the pad portion 411 of the third conductive component 4. The fifth conductive component 6 is a metal wire mainly composed of a metal such as Au (gold), Cu (copper), Al (aluminum), etc. Alternatively, the fifth conductive component 6 may be formed by a wide strip-shaped metal component or a lead component instead of the metal wire.

[0129] According to the present embodiment, the heat flux of heat dissipation from the semiconductor element 1 can also be increased, so that the semiconductor element 1 can be operated more appropriately. In addition, by using the first conductive member 2 and the fourth conductive member 5 as separate bodies, for example, it is easier to realize a structure in which the thickness of the first conductive member 2 in the thickness direction z is thicker than the thickness of the fourth conductive member 5 in the thickness direction z. By making the thickness of the first conductive member 2 thicker, heat dissipation from the semiconductor element 1 (semiconductor layer 10) can be further promoted.

[0130] Fig.24 A first modification of the semiconductor device A2 is shown. A semiconductor device A21 of this modification mainly differs from the semiconductor device A2 described above in the structure of the first conductive component 2 .

[0131] In this example, the first island portion 211 of the first conductive member 2 protrudes toward the z1 side in the thickness direction z from the first resin surface 91 of the sealing resin 9. The first main surface 201 is located closer to the z1 side in the thickness direction z than the first resin surface 91.

[0132] According to this example, the heat flux of heat dissipation from the semiconductor element 1 can also be increased, so that the semiconductor element 1 can be operated more appropriately. In addition, when the semiconductor device A21 is mounted on a heat sink (not shown) or the like, the first main surface 201 is located on the z1 side of the thickness direction z from the first resin surface 91, which has the advantage of being easy to press the first main surface 201 against the heat sink. As a result, heat dissipation from the semiconductor device A21 can be further promoted.

[0133] Fig.25 A second modification of the semiconductor device A2 is shown. The semiconductor device A22 of this modification is mainly different from the above-described example in the structure of the first conductive component 2.

[0134] In this example, the first conductive component 2 has a plurality of protrusions 223. The plurality of protrusions 223 protrude from the first main surface 201 to the z1 side in the thickness direction z. There is no limitation on the shape and arrangement of the plurality of protrusions 223 when viewed in the thickness direction z. For example, the plurality of protrusions 223 may be arranged in a matrix when viewed in the thickness direction z. Alternatively, the protrusions 223 may be in the shape of a fin extending along the first direction x or the second direction y. There is no limitation on the positional relationship between the first main surface 201 and the first resin surface 91 in this example. For example, the first main surface 201 is located closer to the z1 side in the thickness direction z than the first resin surface 91.

[0135] According to this example, the heat flux of heat dissipated from the semiconductor element 1 can be increased, so that the semiconductor element 1 can be operated more appropriately. In addition, since the first conductive component 2 has a plurality of protrusions 223, the area of ​​heat dissipated from the first conductive component 2 can be increased. Thus, heat dissipation from the semiconductor device A22 can be further promoted.

[0136] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific structure of each part of the semiconductor device according to the present disclosure can be freely changed in various designs.

[0137] The present disclosure includes the embodiments described in the following supplementary notes.

[0138] Note 1.

[0139] A semiconductor device comprising:

[0140] A semiconductor element comprising a semiconductor layer and a first electrode disposed on a first side in a thickness direction of the semiconductor layer;

[0141] A first conductive component connected to the first electrode;

[0142] a second conductive member joined to the semiconductor element from a second side in the thickness direction; and

[0143] a sealing resin having a first resin surface facing the first side in the thickness direction and a second resin surface facing the second side, and covering at least a portion of each of the first conductive component and the second conductive component and the semiconductor element,

[0144] The first electrode includes a first metal layer including a metal having a higher thermal conductivity than solder.

[0145] Note 2.

[0146] The semiconductor device according to Supplementary Note 1, wherein:

[0147] The first metal layer includes Ag or Cu.

[0148] Note 3.

[0149] The semiconductor device according to Supplement 1 or 2, wherein:

[0150] The second conductive member is exposed from the second resin surface.

[0151] Note 4.

[0152] A semiconductor device according to any one of Supplementary Notes 1 to 3, wherein:

[0153] The first conductive member is exposed from the first resin surface.

[0154] Note 5.

[0155] The semiconductor device according to Supplementary Note 4, wherein:

[0156] The first conductive member includes a protrusion protruding toward the first side in the thickness direction.

[0157] Note 6.

[0158] A semiconductor device according to any one of Supplementary Notes 1 to 5, wherein:

[0159] The first electrode includes a second metal layer between the semiconductor layer and the first metal layer.

[0160] Note 7.

[0161] The semiconductor device according to Supplementary Note 6, wherein:

[0162] The second metal layer includes Al.

[0163] Note 8.

[0164] The semiconductor device according to Supplementary Note 6 or 7, wherein:

[0165] The thickness of the first metal layer is thicker than the thickness of the second metal layer.

[0166] Note 9.

[0167] A semiconductor device according to any one of Supplementary Notes 1 to 8, wherein:

[0168] A first bonding layer bonding the first electrode and the first conductive member is further provided.

[0169] Note 10.

[0170] The semiconductor device according to Supplementary Note 9, wherein:

[0171] The thickness of the first metal layer is thicker than the thickness of the first bonding layer.

[0172] Note 11.

[0173] A semiconductor device according to any one of Supplementary Notes 1 to 8, wherein:

[0174] The first metal layer is in direct contact with the first conductive component.

[0175] Note 12.

[0176] The semiconductor device according to any one of Supplementary Notes 1 to 11, wherein:

[0177] The semiconductor element has a second electrode disposed on the second side in the thickness direction of the semiconductor layer.

[0178] The second electrode includes a third metal layer including a metal having a higher thermal conductivity than solder.

[0179] Note 13.

[0180] The semiconductor device according to Supplementary Note 12, wherein:

[0181] The third metal layer includes Ag or Cu.

[0182] Note 14.

[0183] The semiconductor device according to Supplementary Note 12 or 13, wherein:

[0184] further comprising a second bonding layer bonding the second electrode to the second conductive member,

[0185] The third metal layer is thicker than the second bonding layer.

[0186] Note 15.

[0187] A semiconductor device according to any one of Supplementary Notes 1 to 14, wherein:

[0188] further comprising a third conductive component conductively connected to the third electrode,

[0189] The semiconductor element includes a third electrode disposed on the first side in the thickness direction of the semiconductor layer.

[0190] Note 16.

[0191] A semiconductor device according to any one of Supplementary Notes 1 to 15, wherein:

[0192] The first conductive member includes a first terminal portion including a portion located on the second side in the thickness direction relative to the semiconductor element.

[0193] Note 17.

[0194] The semiconductor device according to Supplementary Note 15, wherein:

[0195] further comprising a fourth conductive component conductively connected to the first conductive component,

[0196] The fourth conductive member has a portion located on the second side in the thickness direction relative to the semiconductor element.

[0197] Explanation of symbols

[0198] A1, A11, A2, A21, A22—semiconductor device, B1, B2, B3, B4, B5—joining structure, 1—semiconductor element, 2—first conductive component, 3—second conductive component, 4—third conductive component, 5—fourth conductive component, 6—fifth conductive component, 7—first joining layer, 8—second joining layer, 9—sealing resin, 10—semiconductor layer, 11—first electrode, 12—second electrode, 13—third electrode, 21—first substrate, 22—first plating layer, 31—second substrate, 32—second plating layer, 59—conductive joining material, 91—first resin surface, 92—second resin surface, 93—third resin surface, 94—fourth resin surface, 95—fifth resin surface, 96—sixth resin surface, 111—first metal layer, 112—second metal layer, 113—first intermediate metal layer, 114—first barrier layer, 121—third metal layer metal layer, 122—fourth metal layer, 123—second intermediate metal layer, 124—second barrier layer, 201—first main surface, 202—second main surface, 211—first island portion, 212—first terminal portion, 213—connecting portion, 221—recessed portion, 223—convex portion, 301—third main surface, 302—fourth main surface, 311—second island portion, 312—second terminal portion, 321—thin-wall extension portion, 322—through hole, 3 23—thick-walled extension portion, 401—fifth main surface, 402—sixth main surface, 411—soldering pad portion, 412—third terminal portion, 421—thin-walled extension portion, 501—seventh main surface, 502—eighth main surface, 511—soldering pad portion, 512—fourth terminal portion, 521—thin-walled extension portion, t111, t112, t121, t122, t7, t8—thickness, x—first direction, y—second direction, z—thickness direction.

Claims

1. A semiconductor device, characterized in that: have: A semiconductor element comprising a semiconductor layer and a first electrode disposed on a first side in a thickness direction of the semiconductor layer; A first conductive component connected to the first electrode; a second conductive component joined to the semiconductor element from a second side in the thickness direction; as well as a sealing resin having a first resin surface facing the first side in the thickness direction and a second resin surface facing the second side, and covering at least a portion of each of the first conductive component and the second conductive component and the semiconductor element, The first electrode includes a first metal layer including a metal having a higher thermal conductivity than solder.

2. The semiconductor device according to claim 1, wherein: The first metal layer includes Ag or Cu.

3. The semiconductor device according to claim 1 or 2, characterized in that: The second conductive member is exposed from the second resin surface.

4. The semiconductor device according to any one of claims 1 to 3, characterized in that The first conductive member is exposed from the first resin surface.

5. The semiconductor device according to claim 4, wherein: The first conductive member includes a protrusion protruding toward the first side in the thickness direction.

6. The semiconductor device according to any one of claims 1 to 5, characterized in that The first electrode includes a second metal layer between the semiconductor layer and the first metal layer.

7. The semiconductor device according to claim 6, wherein: The second metal layer includes Al.

8. The semiconductor device according to claim 6 or 7, characterized in that: The thickness of the first metal layer is thicker than the thickness of the second metal layer.

9. The semiconductor device according to any one of claims 1 to 8, characterized in that A first bonding layer bonding the first electrode and the first conductive member is further provided.

10. The semiconductor device according to claim 9, wherein: The thickness of the first metal layer is thicker than the thickness of the first bonding layer.

11. The semiconductor device according to any one of claims 1 to 8, characterized in that The first metal layer is in direct contact with the first conductive component.

12. The semiconductor device according to any one of claims 1 to 11, characterized in that The semiconductor element has a second electrode disposed on the second side in the thickness direction of the semiconductor layer. The second electrode includes a third metal layer including a metal having a higher thermal conductivity than solder.

13. The semiconductor device according to claim 12, wherein: The third metal layer includes Ag or Cu.

14. The semiconductor device according to claim 12 or 13, characterized in that: further comprising a second bonding layer bonding the second electrode to the second conductive member, The third metal layer is thicker than the second bonding layer.

15. The semiconductor device according to any one of claims 1 to 14, characterized in that further comprising a third conductive component conductively connected to the third electrode, The semiconductor element includes a third electrode disposed on the first side in the thickness direction of the semiconductor layer.

16. The semiconductor device according to any one of claims 1 to 15, characterized in that The first conductive member includes a first terminal portion including a portion located on the second side in the thickness direction relative to the semiconductor element.

17. The semiconductor device according to claim 15, wherein: further comprising a fourth conductive component conductively connected to the first conductive component, The fourth conductive member has a portion located on the second side in the thickness direction relative to the semiconductor element.

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