Electrolysis-laser composite flexible machining method for array microstructure

Through the electrolysis-laser composite flexible processing method, the combination of a porous mask and a line belt laser source is used to solve the problem of insufficient processing efficiency and accuracy of array fine structures in the prior art, and efficient and low-cost multi-shaped fine structure processing is achieved.

CN119634949AActive Publication Date: 2025-03-18HENAN POLYTECHNIC UNIV
View PDF 8 Cites 0 Cited by

Patent Information

Application Number
CN202510006603.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-01-03
Publication Date
2025-03-18
Estimated Expiration
2045-01-03

AI Technical Summary

Technical Problem

The prior art is difficult to efficiently and at low cost to process large batches of array fine structures in multiple shapes, and the processing efficiency and accuracy are insufficient.

Method used

The electrolytic-laser composite flexible processing method is adopted to achieve efficient processing of the array fine structure through the cooperation of the porous mask and the line belt laser source. This method uses the complex action of electrolytic dissolution effect and laser thermal radiation effect to quickly form array fine structures.

Benefits of technology

It realizes efficient and low-cost processing of array fine structures, improves processing efficiency and accuracy, and is suitable for large-scale and multi-shaped fine structure processing.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119634949A_ABST
    Figure CN119634949A_ABST
Patent Text Reader

Abstract

The invention discloses an electrolysis-laser composite flexible machining method for an array fine structure, and relates to the field of electrolysis-laser composite flexible machining for the array fine structure. The method integrates a mask processing technology and a laser shaping technology for innovation. A conductive layer is arranged on the wall surface of the array through hole of the porous mask plate, and line band laser penetrates through the array through hole to realize laser spot shaping. And the conductive layer and the shaping laser spots act on the same area for electrolysis-laser combined machining. By means of mutual matching movement adjustment of the porous mask plate and the line belt laser source, different laser spot shapes and array structures can be conveniently switched, array micro-pore structures or array micro-pit structures can be machined, and array micro-groove structures can be machined in the mode that the porous mask plate and the line belt laser source are synchronously fed. The invention provides a low-cost and high-efficiency flexible processing technical method which is easy to implement and high in practicability.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The invention patent relates to the field of electrolysis-laser composite processing of microstructures, and specifically to a method for electrolysis-laser composite flexible processing of array microstructures. Background Art

[0002] Array microstructures such as holes, pits, grooves, and seams are widely used in aerospace, medical equipment, electronic equipment and other fields. Mechanical drilling and milling, laser processing, electric spark processing, electrolytic processing and their composite / combined processing are the main methods for processing array microstructures. Among them, electrolytic processing has the advantages of no mechanical force, a wide range of suitable materials, high efficiency, and no recast layer on the processing surface. It is particularly suitable for the processing of array microstructures with low stiffness, fine scale, and high requirements for surface damage, such as film cooling holes on aviation blades. However, single electrolytic processing has the disadvantages of low precision and low material removal rate. Based on this, scientific and technological workers have developed laser-electrolytic composite processing methods with different working forms to utilize the photothermal effect of laser to improve processing efficiency and the localization of material removal.

[0003] The Chinese patent authorization announcement number CN104014880B discloses a laser-electrolysis composite processing device and method for micro-holes without a recast layer. The laser processing technology is first used to quickly form a prefabricated hole, and then the electrolysis method is used to remove the small amount of recast layer and processing allowance remaining on the hole wall. This method can improve the surface quality of the processed hole to a certain extent, but the efficiency is still not high. The Chinese patent authorization announcement number CN114713970A discloses a liquid-conducting laser electrolysis composite processing device and method. This method combines the respective advantages of water-conducting laser processing and electrolytic processing, and the hole-making efficiency and processing accuracy can be improved to a certain extent. However, for the processing of a large number of micro-structures with variable shapes, this method still has the problem of insufficient adaptability.

[0004] The European patent authorization announcement number EP2043812B1 discloses a method for manufacturing ultra-thin surfaces by combining electrochemical and laser micromachining processes. First, the material thickness is quickly processed to 10-20μm by electrolytic processing, and then the material thickness is finely processed to 1-5μm by ultrashort pulse laser beam. This method improves the dimensional accuracy control and makes up for the shortcomings of the slow processing speed of a single ultrashort pulse laser to a certain extent, but the overall efficiency is not high. The patent with the US patent authorization announcement number US011992889B2 discloses a method for preparing a cross-size micro-nano structure array. The method uses multi-beam laser interference to assist electrochemical dissolution or electrochemical deposition, and controls the physical fields such as temperature field and electric field in a specific area of ​​the material surface by using the interference light field, thereby controlling the electrochemical dissolution or electrochemical deposition rate of the workpiece material in the area. Although this method is suitable for large-area array microstructure processing, it cannot flexibly adjust the array microstructure with variable shapes, and still cannot meet the processing of large-area arrays with variable shapes and complex structures.

[0005] Nevertheless, the existing processing methods are still difficult to meet the requirements of high-efficiency, high-quality, convenient and low-cost processing of large-scale, variable-shaped array microstructures. To this end, the present invention proposes a method for electrolysis-laser composite flexible processing of array microstructures. Summary of the invention

[0006] In view of the problems existing in the prior art, the present invention provides a method for electrolysis-laser composite flexible processing of array microstructures, so as to achieve high-efficiency, high-quality, convenient and low-cost processing of large-scale and variable-shaped array microstructures.

[0007] To achieve the above object, the present invention provides the following technical solution: a method for electrolysis-laser composite flexible processing of array microstructures, the method comprising:

[0008] S1: fix the workpiece in an electrolyte tank and immerse the surface to be processed completely under the liquid surface of the electrolyte, place a porous mask having a conductive layer, a reflective layer and a plurality of array through holes above the surface to be processed and immerse the porous mask completely in the electrolyte, and place a line laser source directly above the porous mask, wherein the plurality of array through holes have different shapes, sizes and arrangements;

[0009] S2: moving the multi-hole mask plate so that the selected row of array through holes is placed directly above the starting processing position of the surface to be processed, and adjusting the position of the line laser source so that it is located directly above the selected row of array through holes;

[0010] S3: electrically connecting the positive electrode and the negative electrode of the electrolytic power source to the workpiece and the conductive layer of the selected row of array through holes, respectively, and adjusting the machining gap between the porous mask and the surface to be machined to a set value;

[0011] S4: while starting the line-strip laser source and the electrolytic power supply, adjust the position of the line-strip laser source so that the symmetric center line of the line-strip laser spot generated by it coincides with the symmetric center line of the selected row of array through holes. At this time, the material in the area of ​​the surface to be processed that is directly opposite to the selected row of array through holes is dissolved and removed under the combined effect of the anode dissolution effect and the thermal radiation effect of the through-hole laser passing through the array through holes, thereby forming a row of array microstructures;

[0012] S5: When the array microstructure meets the processing requirements, turn off the electrolysis power supply and the line laser source.

[0013] Further, the microstructure is a micropore structure or a micropit structure;

[0014] S5 specifically includes: during the material dissolution and removal process, the line laser source, the porous mask and the workpiece are relatively stationary, and when the array of micro-hole structures or the array of micro-pit structures meet the processing requirements, the electrolysis power supply and the line laser source are turned off;

[0015] After completing steps S1-S5, continue to perform the following steps to achieve the processing of a multi-row array of micro-hole structures or a multi-row array of micro-pit structures:

[0016] S6a: adjusting the position of the line laser source to be directly above another row of array through holes, and adjusting the negative electrode of the electrolytic power supply to be electrically connected to the conductive layer of the row of array through holes;

[0017] S7a: Repeat steps S4-S6a until all the array micro-hole structures or array micro-pit structures to be processed on the surfaces of all workpieces are processed.

[0018] Further, the microstructure is a microgroove structure;

[0019] S5 specifically includes: during the material dissolution and removal process, the line-strip laser source and the porous mask plate are fed synchronously in the proposed processing feed direction at a set speed, and the symmetric center line of the line-strip laser spot is always coincident with the symmetric center line of the selected row of array through holes during the whole process, and when the row of array fine groove structures meets the processing requirements, the electrolysis power supply and the line-strip laser source are turned off;

[0020] After completing steps S1-S5, continue to perform the following steps to achieve the processing of a multi-row array micro-groove structure:

[0021] S6b: synchronously moving the line laser source and the multi-hole mask plate so that the selected row of array through holes is placed directly above another processing position of the surface to be processed;

[0022] S7b: Repeat steps S4-S6b until all the array micro-groove structures to be processed on the surfaces of all workpieces are processed.

[0023] Furthermore, the porous mask is made of electrically insulating polymer material.

[0024] Furthermore, the conductive layer is attached to the wall surface of the array through holes.

[0025] Furthermore, the reflective layer is attached to the upper surface of the porous mask.

[0026] Furthermore, the processing gap between the porous mask plate and the surface to be processed is 0.1-0.5 mm.

[0027] Furthermore, the maximum width of the array through holes is smaller than the width of the linear strip-shaped laser spot.

[0028] Furthermore, the line-strip laser source is a green laser source.

[0029] The working principle of the electrolysis-laser composite flexible processing array microstructure method described in the present invention is briefly described as follows:

[0030] The line-strip laser source is precisely adjusted, and the line-strip laser is irradiated on the porous mask. The symmetric center line of the line-strip laser spot generated by it coincides with the symmetric center line of the selected row of array through holes. The through-hole laser that passes through the array through holes irradiates the surface of the workpiece, and the shape and size of the laser spot formed replicate the shape and size of the array through holes. The area covered by the laser spot is the processing area, which will produce a laser thermal irradiation effect; the laser that does not pass through the array through holes irradiates the reflective layer on the upper surface of the porous mask to produce diffuse reflection. The porous mask is immersed in the electrolyte, and the electrolyte protects the mask from damage by taking away the residual heat of the diffusely reflected laser.

[0031] The conductive layer located on the wall of the through-hole array of the porous mask is connected to the negative electrode of the electrolytic power supply, and the workpiece is connected to the positive electrode of the electrolytic power supply. From the relationship between current density and electric field strength and the distribution law of electric field strength, it can be seen that the area of ​​the workpiece to be processed facing the conductive layer is a high current density area. At the same time, due to the phenomenon of cutting off the current density in the passivating electrolyte (such as NaNO3), the effective anodic dissolution effect only occurs in the high current density area facing the conductive layer on the wall of the through-hole array. The shape and size of the anodic dissolution area on the workpiece to be processed replicate the shape and size of the array through-hole.

[0032] The thermal irradiation area formed by the through-hole laser passing through the array through-holes overlaps with the electrolytic anodic dissolution area formed by the conductive layer on the wall of the through-hole array of the porous mask. The thermal irradiation of the laser reduces the electrochemical activation energy of the material on the surface of the workpiece, enhances the electric field distribution, and increases the electrolytic reaction rate. At the same time, the electrolyte cools the laser irradiation area to prevent overburning and reduce the reflectivity of the workpiece surface. The material in the area is dissolved and removed under the combined effect of the anodic dissolution effect and the thermal irradiation effect of the through-hole laser passing through the array through-holes, thereby forming an array micropore structure or an array micropit structure.

[0033] The movable porous mask plate can place the symmetrical center line of different rows of array through holes just above the starting processing position of the surface to be processed, and the position of the line laser source can also be adjusted to just above different rows of array through holes. Through the coordinated movement and adjustment of the porous mask plate and the line laser source, different laser spot shapes and array structures can be easily switched, and the array micro-groove structure can also be processed by synchronous feeding of the porous mask plate and the line laser source, thereby meeting the processing needs of array micro-structures of different requirements and scenarios.

[0034] Compared with the prior art methods, the processing method of the present invention has the following outstanding advantages.

[0035] 1. It can realize flexible and fast manufacturing of array microstructures. The method of the present invention adopts a porous mask plate and a line-strip laser, and pre-sets the shape to be processed on the porous mask plate. By adjusting the line-strip laser source above different rows of array holes, different laser spot shapes and array structures can be conveniently switched. In addition, a porous array hole structure that is more in line with the product structure can be obtained by quickly replacing the porous mask plate, thereby obtaining a richer workpiece processing shape and array structure. This method is generally applicable to various array microstructures. The scheme is flexible and expansible, and can process different workpieces as the production plan changes. It has strong flexible processing capabilities and is convenient for multi-structure and continuous production.

[0036] 2. It can realize low-cost and high-efficiency processing of array microstructures. The electrolysis-laser composite flexible processing method of the present invention adopts a porous mask plate and a line laser, and can simultaneously perform electrolysis-laser composite processing on a row of array microstructures in parallel. Its speed will increase by dozens of times or even higher than that of the existing single-point processing method. This method enables processing to have flexible manufacturing capabilities, shortens processing preparation time, and reduces preparation workload. Its processing cost is lower and processing efficiency is higher.

[0037] 3. Easy to implement and highly practical. The method of the present invention integrates mask processing technology and laser shaping technology for innovation. Mask processing technology and laser shaping technology have been applied in production, and on this basis, it is easy to implement the device described in the method of the present invention. The method fully considers the feasibility of electrolytic processing, laser processing, and the protection of the porous mask plate, etc. The production and processing technology has good stability, simple operation, and high product quality. In short, the present invention provides a processing method that is easy to implement and highly practical. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 Schematic diagram of a device for electrolysis-laser composite flexible processing of array microstructures.

[0039] Figure 2 Schematic diagram of the principle of array micro-pit structure processing.

[0040] Figure 3 Schematic diagram of the principle of array micro-groove structure processing.

[0041] Figure 4 Schematic diagram of the multi-row array micro-hole structure processing device in Example (I).

[0042] Figure 5 Schematic diagram of processing a workpiece with a multi-row array of micro-hole structures in Example (I).

[0043] Figure 6 Schematic diagram of the array micro-groove structure processing device in Example (II).

[0044] Figure 7 Schematic diagram of processing a workpiece with an array of micro-groove structures in Example (II).

[0045] Name of the label in the figure:

[0046] 1. Electrolyte tank; 2. Electrolyte; 3. Workpiece; 4. Surface to be processed; 5. Multi-hole mask; 5-1. Array through holes; 5-2. Reflective layer; 5-3. Conductive layer; 6. Symmetrical center line; 7. Line-strip laser spot; 7-1. Through-hole laser; 7-2. Diffuse reflection laser; 8. Line-strip laser source; 9. Electrolytic power supply; 10. Processing gap; 11. Micro-pit structure; 12. Micro-hole structure; 13. Micro-groove structure; 14. Processing feed direction. DETAILED DESCRIPTION

[0047] The following will be combined with the accompanying drawings in the implementation of the present invention to clearly and completely describe the implementation methods of the technical solutions in the present invention, and list examples. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present invention. In addition, the technical features involved in the different implementation methods of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0048] To avoid ambiguity in the description, the Y-axis direction in the accompanying drawings is now defined as the width direction, the X-axis direction is the length direction, and the Z-axis direction is the height direction; further, along the Y-axis extension direction, the Y-axis starting point direction is the right side, and the Y-axis end point direction is the left side.

[0049] Specific implementation method (I): The microstructure is a micropore structure 12 or a micropit structure 11. The processing method of the multi-row array micropore structure or the multi-row array micropit structure is as follows;

[0050] Combination Figure 1 As shown in the schematic diagram, the workpiece 3 is fixed in the electrolyte tank 1 and its processing surface 4 is completely immersed in the liquid surface of the electrolyte 2; a porous mask plate 5 provided with a conductive layer 5-3, a reflective layer 5-2 and a plurality of rows of array through holes 5-1 is placed above the processing surface 4 and the porous mask plate 5 is completely immersed in the electrolyte 2, and a line-strip laser source 8 is placed directly above the porous mask plate 5. The shapes, sizes and arrangements of the plurality of rows of array through holes 5-1 are different. The height of the line-strip laser is adjusted to focus the laser on the processing surface 4 of the workpiece 3.

[0051] Move the porous mask plate 5 back and forth and left and right in the horizontal plane so that a selected row of array through holes 5-1 is placed directly above the starting processing position of the surface 4 to be processed, and adjust the position of the line laser source 8 so that it is located directly above the row of array through holes 5-1.

[0052] The positive and negative electrodes of the electrolytic power supply 9 are electrically connected to the workpiece 3 and the wall conductive layer 5-3 of the selected row of array through holes 5-1, respectively. The processing gap 10 between the porous mask plate 5 and the surface to be processed 4 should be determined and adjusted according to the processing material, electrolytic voltage, electrolyte 2 characteristics, etc. It should be noted that the porous mask plate 5 is insulated except for the conductive layer 5-3 on the hole wall, and only the conductive layer 5-3 on the wall of the selected array through holes 5-1 is energized. In addition, the porous mask plate 5 should be close to 1-2mm below the liquid level of the electrolyte 2, so as not to affect the diffusion of the diffusely reflected laser 7-2 generated by the reflective layer 5-2 and the cooling of the porous mask plate 5 by the electrolyte 2, and also avoid the laser attenuation caused by the excessive thickness of the electrolyte above the porous mask plate 5. Similarly, in order to avoid the attenuation of the laser in the electrolyte 2, the laser source uses green light.

[0053] The line-strip laser source 8 is started at low power, and the position of the line-strip laser source 8 is precisely adjusted so that the symmetric center line 6 of the line-strip laser spot 7 generated by the line-strip laser source 8 coincides with the symmetric center line 6 of the selected row of array through holes 5-1. The method of the present invention requires that the maximum width of the array through hole 5-1 is smaller than the width of the line-strip laser spot 7, and ensures that the line-strip laser spot 7 can cover a row of array through holes 5-1 at a time. In implementation, the width of the line-strip laser spot 7 can be adjusted by the beam shaping system according to the size of the processed array through hole 5-1, so as to ensure that the maximum width of the array through hole 5-1 is smaller than the width of the line-strip laser spot 7.

[0054] The laser power is increased and the electrolytic power source 9 is started at the same time. At this time, the material in the area of ​​the selected row of array through holes 5-1 on the workpiece 3 to be processed surface 4 is dissolved and removed under the combined effect of the anodic dissolution effect and the thermal radiation effect of the through-hole laser 7-1 passing through the array through holes 5-1, thereby forming a row of array micro-hole structures or array micro-pit structures. When the row of array micro-hole structures or array micro-pit structures meet the processing requirements, the electrolytic power source 9 and the line laser source 8 are turned off.

[0055] The position of the line-strip laser source 8 is adjusted to be just above another row of array through holes 5-1, and the negative electrode of the electrolytic power source 9 is also connected to the wall conductive layer 5-3 of the row of array through holes 5-1. The line-strip laser source 8 is started again at low power, so that the symmetric center line 6 of the line-strip laser spot 7 coincides with the symmetric center line 6 of the row of array through holes 5-1, and the beam shaping system is adjusted to ensure that the maximum width of the array through hole 5-1 is smaller than the width of the line-strip laser spot 7. The laser power is increased and the electrolytic power source 9 is started at the same time to process the array micro-hole structure or array micro-pit structure of the row, and this step is repeated until all the array micro-hole structures or array micro-pit structures to be processed on the surface of the workpiece 3 are processed. During the processing, the porous mask plate 5, the line-strip laser source 8 and the workpiece 3 are relatively stationary, and the array micro-hole structure or array micro-pit structure on the surface of the workpiece 3 replicates the shape and size of the array through holes 5-1 of the porous mask plate 5. In addition, the position of the porous mask plate 5 can be adjusted according to the processing size requirements. The start and stop of the line-strip laser source 8 and the electrolytic power source 9 and the position adjustment of the porous mask plate 5 and the line-strip laser source 8 during the entire processing process can be controlled by a computer system.

[0056] Specific implementation method (II): The microstructure is a microgroove structure 13. The processing method of the multi-row array microgroove structure is as follows;

[0057] The processing method of the array micro-groove structure differs from the processing method of the array micro-hole structure or the array micro-pit structure only in the coordinated feeding of the porous mask plate 5 and the line-strip laser source 8. The following only describes the coordinated feeding of the porous mask plate 5 and the line-strip laser source 8.

[0058] The material in the area of ​​the workpiece 3 to be processed surface 4 corresponding to the selected row of array through holes 5-1 is dissolved and removed under the combined effect of the anodic dissolution effect and the thermal irradiation effect of the through-hole laser 7-1 passing through the array through holes 5-1. During the material dissolution and removal process, the line-belt laser source 8 and the porous mask plate 5 are fed and processed in the proposed processing feed direction 14 at a set speed. During the whole process, the symmetric center line 6 of the line-belt laser spot 7 always coincides with the symmetric center line 6 of the selected row of array through holes 5-1. When the array micro-groove structure meets the processing requirements, the electrolysis power supply 9 and the line-belt laser source 8 are turned off.

[0059] The line-strip laser source 8 and the porous mask plate 5 are synchronously moved to place a selected row of array through holes 5-1 directly above another processing position of the surface 4 to be processed, and the line-strip laser source 8 and the electrolytic power source 9 are started. During the material dissolution and removal process, the line-strip laser source 8 and the porous mask plate 5 are synchronously fed in the intended processing feed direction 14 at a set speed. During the whole process, the symmetric center line 6 of the line-strip laser spot 7 always coincides with the symmetric center line 6 of the row of array through holes 5-1. When the row of array fine groove structures meets the processing requirements, the electrolytic power source 9 and the line-strip laser source 8 are turned off; this step is repeated until all the array micro-groove structures to be processed on the surfaces of all workpieces 3 are processed.

[0060] The following is an explanation of the specific implementation case:

[0061] Embodiment (I): Processing of multi-row array micro-hole structure;

[0062] The following is combined with Figure 1 , 2 , 4, 5, further explanation of the processing of the array micro-hole structure by the processing method of the present invention:

[0063] S1: Take GH4169 with a size of 50mm×50mm×5mm as the workpiece 3 and fix it in the electrolyte tank 1, with its surface 4 to be processed facing upward; take a porous mask plate 5 with a size of 20mm×20mm, whose array through holes 5-1 have a maximum width of 1mm and a shape as shown in FIG. Figure 4 As shown in the middle porous mask plate 5, it is placed above the surface 4 to be processed; a green laser is selected, the length of the linear laser spot 7 is set to 20 mm and the width is 1.5 mm, and the linear laser source 8 is placed directly above the porous mask plate 5. The linear laser source 8 is 200 mm away from the surface of the workpiece 3, and its focus is on the surface 4 to be processed of the workpiece 3;

[0064] S2: In Figure 4The porous mask plate 5 is adjusted in the XY plane shown so that the array through holes 5-1 of the selected row are placed 3 mm above the right edge of the surface 4 to be processed, and the position of the line laser source 8 is adjusted so that it is located above the row of array through holes 5-1;

[0065] S3: The positive electrode and the negative electrode of the electrolytic power supply 9 are electrically connected to the workpiece 3 and the selected row of array through holes 5-1 hole wall conductive layer 5-3, respectively, the processing gap 10 between the porous mask plate 5 and the surface to be processed 4 is adjusted to 0.3mm, and a 15% concentration NaNO3 solution is added to the electrolyte tank 1 as the electrolyte 2, and the height of the added liquid level is 2mm higher than the reflective layer 5-2 of the porous mask plate 5;

[0066] S4: Start the line-strip laser source 8 at a low power of 8W, precisely adjust the position of the line-strip laser source 8 in the XY plane so that the symmetric center line 6 of the line-strip laser spot 7 generated by it coincides with the symmetric center line 6 of the selected row of array through holes 5-1, adjust the beam shaping system to ensure that the maximum width of the row of array through holes 5-1 is smaller than the width of the line-strip laser spot 7, increase the power of the line-strip laser source 8 to a normal value of 200W, and simultaneously turn on the electrolysis power supply 9 and set the voltage to 35V. At this time, the material in the area on the processing surface 4 corresponding to the row of array through holes 5-1 is dissolved and removed under the combined effect of the anode dissolution effect and the thermal radiation effect of the through-hole laser 7-1 passing through the array through holes 5-1, thereby forming a row of array micro-pore structures;

[0067] S5: During the material dissolution and removal process, the line laser source 8, the porous mask 5 and the workpiece 3 are relatively stationary. When the array of micropore structures meets the processing requirements, the electrolytic power source 9 and the line laser source 8 are turned off;

[0068] S6a: Figure 4 As shown, the porous mask plate 5 remains stationary, and the line laser source 8 moves along the processing feed direction 14 to just above another row of array through holes 5-1;

[0069] S7a: Repeat steps S4-S6a until all the array micro-pore structures to be processed on the workpiece 3 to be processed surface 4 are processed. The shape and size of the workpiece 3 after processing are copied to the shape and size of the array through holes 5-1 of the porous mask plate 5. The array micro-pore structure is as follows: Figure 5 shown.

[0070] Embodiment (II): Processing of multi-row array micro-groove structures;

[0071] The following is combined with Figure 1 , 3 , 6, 7, further explanation of the processing of array micro groove structure by using the processing method of the present invention:

[0072] S1: Take GH4169 with a size of 50mm×50mm×5mm as the workpiece 3 and fix it in the electrolyte tank 1, with its surface 4 to be processed facing upward; put a porous mask plate 5 with a size of 20mm×5mm, whose array through holes 5-1 have a maximum width of 1mm and a shape as shown in FIG. Figure 6 As shown, it is placed above the surface 4 to be processed; a green laser is selected, the length of the linear laser spot 7 is set to 20 mm and the width is 1.5 mm, the linear laser source 8 is placed just above the porous mask 5, the linear laser source 8 is 200 mm away from the surface of the workpiece 3, and its focus is on the surface 4 to be processed of the workpiece 3;

[0073] S2: In Figure 6 The porous mask plate 5 is adjusted in the XY plane shown so that a selected row of array through holes 5-1 is placed 3 mm above the right edge of the surface 4 to be processed, and the position of the line laser source 8 is adjusted so that it is located above the row of array through holes 5-1;

[0074] S3: The positive electrode and the negative electrode of the electrolytic power supply 9 are electrically connected to the workpiece 3 and the selected row of array through holes 5-1 hole wall conductive layer 5-3, respectively, the processing gap 10 between the porous mask plate 5 and the surface to be processed 4 is adjusted to 0.3mm, and a 15% concentration NaNO3 solution is added to the electrolyte tank 1 as the electrolyte 2, and the height of the added liquid level is 2mm higher than the reflective layer 5-2 of the porous mask plate 5;

[0075] S4: Start the line-strip laser source 8 at a low power of 8W, precisely adjust the position of the line-strip laser source 8 in the XY plane so that the symmetric center line 6 of the line-strip laser spot 7 generated by it coincides with the symmetric center line 6 of the selected row of array through holes 5-1, adjust the beam shaping system to ensure that the maximum width of the row of array through holes 5-1 is smaller than the width of the line-strip laser spot 7, increase the power of the line-strip laser source 8 to a normal value of 200W, and simultaneously turn on the electrolytic power supply 9 and set the voltage to 35V. At this time, the material in the area on the surface 4 to be processed that is opposite to the row of array through holes 5-1 is dissolved and removed under the combined effect of the anode dissolution effect and the thermal radiation effect of the through-hole laser 7-1 passing through the array through holes 5-1, thereby forming a row of array micro-groove structures;

[0076] S5: During the material dissolution and removal process, the porous mask 5 and the line laser source 8 are locked with each other and moved along the line laser source 8 at a speed of 20 mm / min. Figure 6 The processing feed direction 14 shown in the figure feeds to a position 3mm from the left, and then returns to the starting point along the same path at a speed of 20mm / min. At this time, the processing depth is about 0.5mm. During the movement, the symmetric center line 6 of the linear laser spot 7 always coincides with the symmetric center line 6 of the row of array through holes 5-1; according to the above processing method, the scanning process is repeated for one round trip, and the processing depth is about 0.5mm, and the processing is as follows Figure 7The array micro-groove structure pattern shown in the figure, when the array micro-groove structure reaches the processing requirements, the electrolysis power supply 9 and the line laser source 8 are turned off;

[0077] S6b: synchronously moving the line laser source 8 and the multi-hole mask plate 5, so that the selected row of array through holes 5-1 is placed just above another processing position of the surface 4 to be processed;

[0078] S7b: Repeat steps S4-S6b until all the array micro-groove structures to be processed on the surfaces of all workpieces 3 are processed.

[0079] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0080] The above-described embodiments only express several implementation methods under specific parameters of the present invention, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, without departing from the concept of the present invention, several modifications and improvements can be made, or larger or smaller processing dimensions can be adopted, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

Claims

1. A method for electrolysis-laser composite flexible processing of array microstructures, characterized in that: The method comprises: S1: fix the workpiece (3) in an electrolyte tank (1) and completely immerse the surface to be processed (4) thereof under the liquid surface of the electrolyte (2); place a porous mask plate (5) provided with a conductive layer (5-3), a reflective layer (5-2) and a plurality of arrayed through holes (5-1) above the surface to be processed (4) and completely immerse the porous mask plate (5) in the electrolyte (2); place a line laser source (8) directly above the porous mask plate (5); the plurality of arrayed through holes (5-1) have different shapes, sizes and arrangements; S2: moving the porous mask plate (5) so that a selected row of array through holes (5-1) is placed directly above the starting processing position of the surface to be processed (4), and adjusting the position of the line laser source (8) so that it is located directly above the selected row of array through holes (5-1); S3: The positive electrode and the negative electrode of the electrolytic power source (9) are electrically connected to the workpiece (3) and the conductive layer (5-3) of the selected row of array through holes (5-1), and the processing gap (10) between the porous mask plate (5) and the surface to be processed (4) is adjusted to a set value; S4: while starting the line-strip laser source (8) and the electrolytic power source (9), the position of the line-strip laser source (8) is adjusted so that the symmetric center line (6) of the line-strip laser spot (7) generated by the line-strip laser source (8) coincides with the symmetric center line (6) of the selected row of array through holes (5-1). At this time, the material in the area of ​​the surface to be processed (4) corresponding to the selected row of array through holes (5-1) is dissolved and removed under the combined effect of the anodic dissolution effect and the thermal radiation effect of the through-hole laser (7-1) passing through the array through holes (5-1), thereby forming a row of array microstructures; S5: When the array microstructure meets the processing requirements, the electrolytic power source (9) and the line laser source (8) are turned off.

2. The method for electrolysis-laser composite flexible processing of array microstructures according to claim 1, characterized in that: The microstructure is a micropore structure (12) or a micropit structure (11); The S5 specifically includes: during the material dissolution and removal process, the line laser source (8), the porous mask (5) and the workpiece (3) are relatively stationary, and when the array of micro-hole structures or the array of micro-pit structures meet the processing requirements, the electrolytic power source (9) and the line laser source (8) are turned off; After completing steps S1-S5, continue to perform the following steps to achieve the processing of a multi-row array of micro-hole structures or a multi-row array of micro-pit structures: The method further comprises: S6a: adjusting the position of the line laser source (8) to be directly above another row of selected array through holes (5-1), and at the same time adjusting the negative electrode of the electrolytic power source (9) to be electrically connected to the conductive layer (5-3) of the row of array through holes (5-1); S7a: Repeat steps S4-S6a until all the array micro-hole structures or array micro-pit structures to be processed on the surfaces of all the workpieces (3) are processed.

3. The method for electrolysis-laser composite flexible processing of array microstructures according to claim 1, characterized in that: The microstructure is a microgroove structure (13); The S5 is specifically as follows: during the material dissolution and removal process, the line-strip laser source (8) and the porous mask plate (5) are fed synchronously in a set processing feed direction (14) at a set speed, and during the whole process, the symmetric center line (6) of the line-strip laser spot (7) and the symmetric center line (6) of the selected row of array through holes (5-1) are always coincident, and when the row of array fine groove structures meets the processing requirements, the electrolysis power supply (9) and the line-strip laser source (8) are turned off; After completing steps S1-S5, continue to perform the following steps to achieve the processing of a multi-row array micro-groove structure: S6b: synchronously moving the line laser source (8) and the multi-hole mask (5) so that a selected row of array through holes (5-1) is placed directly above another processing position of the surface to be processed (4); S7b: Repeat steps S4-S6b until all the array micro-groove structures to be processed on the surfaces of all the workpieces (3) are processed.

4. The method for electrolysis-laser composite flexible processing of array microstructures according to claim 1, characterized in that: The porous mask plate (5) is made of electrically insulating polymer material.

5. The method for electrolysis-laser composite flexible processing of array microstructures according to claim 1, characterized in that: The conductive layer (5-3) is attached to the wall surface of the array through hole (5-1).

6. The method for electrolysis-laser composite flexible processing of array microstructures according to claim 1, characterized in that: The reflective layer (5-2) is attached to the upper surface of the porous mask plate (5).

7. The method for electrolysis-laser composite flexible processing of array microstructures according to claim 1, characterized in that: The processing gap (10) between the porous mask plate (5) and the surface to be processed (4) is 0.1 to 0.5 mm.

8. The method for electrolysis-laser composite flexible processing of array microstructures according to claim 1, characterized in that: The maximum width of the array through holes (5-1) is smaller than the width of the linear band laser spot (7).

9. The method for electrolysis-laser composite flexible processing of array microstructures according to claim 1, characterized in that: The line-strip laser source (8) is a green laser source.

Citation Information

Patent Citations

  • Laser-electrolytic composite machining device and method for micro-holes without recast layer

    CN104014880B

  • Waveguide laser electrolysis combined machining device and method

    CN114713970A

  • Combined electrochemical and laser micromachining process for creating ultra-thin surfaces

    EP2043812B1

  • Method and device for realizing photoelectrochemical micro-etch processing of masked electrode

    CN101817108A

  • Holographic laser micro electrochemical machining method and device thereof

    CN103817389A