Treatment method of MOCVD (Metal Organic Chemical Vapor Deposition) reaction chamber

Abstract

The invention provides a processing method of an MOCVD (Metal Organic Chemical Vapor Deposition) reaction chamber, and relates to the technical field of semiconductors. The method comprises the following steps: sequentially carrying out airflow type adsorption treatment, pure oxidation treatment, gas replacement treatment and atmosphere recovery treatment on an MOCVD reaction chamber, wherein the treatment processes are carried out in a state that the MOCVD reaction chamber is not opened. Compared with an existing cavity opening maintenance mode, the MOCVD reaction cavity cannot be exposed in the atmospheric environment, and then the situation that the MOCVD reaction cavity is polluted by impurities such as water and oxygen in the atmospheric environment can be avoided; and new impurities are not introduced in the airflow type adsorption treatment, pure oxidation treatment and gas replacement treatment processes, so that the atmosphere recovery treatment time can be greatly shortened. In general, according to the technical scheme, the MOCVD reaction chamber is treated on the basis of the mode that the chamber is not opened, the maintenance workload of the MOCVD reaction chamber can be reduced, and the production capacity is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a method for processing an MOCVD reaction chamber. Background Art

[0002] When using MOCVD (Metal-organic Chemical Vapor Deposition) equipment to grow GaN-based LED epitaxial layers, as the growth cycle increases, the Mg content in the MOCVD reaction chamber will gradually increase, thereby affecting the lattice quality of the grown LED epitaxial layer, and further affecting the electrical performance of the LED chip; and as the growth cycle increases, the impurities in the MOCVD reaction chamber will gradually increase, resulting in the presence of more particles on the surface of the subsequently grown LED epitaxial layer, thereby affecting the surface yield of the LED epitaxial layer.

[0003] To solve the above technical problems, the MOCVD reaction chamber is usually treated by opening the chamber for maintenance. For example, the impurities inside the MOCVD reaction chamber are cleaned by opening the chamber, and the metal organic matter adsorbed on the inner wall of the MOCVD reaction chamber, the gas pipeline on the upper cover of the MOCVD reaction chamber, and the internal sprayer is consumed by oxygen by breaking the vacuum and exposing it to the atmosphere.

[0004] However, when the MOCVD reaction chamber is opened for maintenance, breaking the vacuum and exposing it to the atmosphere will destroy the growth environment of the LED epitaxial layer in the MOCVD reaction chamber, resulting in abnormal photoelectric performance of the output LED epitaxial layer. At this time, it takes a long time, about 15 hours to 20 hours, to restore the growth environment of the LED epitaxial layer in the MOCVD reaction chamber. Such operations increase the maintenance workload of the MOCVD reaction chamber and seriously affect production capacity. Summary of the invention

[0005] In view of the above problems, the present application provides a method for treating a MOCVD reaction chamber to reduce the maintenance workload of the MOCVD reaction chamber and improve production capacity. The specific solution is as follows:

[0006] The first aspect of the present application provides a method for processing an MOCVD reaction chamber, the method comprising:

[0007] performing an airflow adsorption treatment on the MOCVD reaction chamber;

[0008] Performing pure oxidation treatment on the MOCVD reaction chamber;

[0009] Performing a gas replacement treatment on the MOCVD reaction chamber;

[0010] The MOCVD reaction chamber is subjected to atmosphere recovery treatment.

[0011] Preferably, in the above-mentioned method for treating the MOCVD reaction chamber, the MOCVD reaction chamber is subjected to airflow adsorption treatment, comprising:

[0012] The boundary protection airflow of the MOCVD reaction chamber is closed, the flow rate of the edge airflow and the flow rate of the main airflow of the MOCVD reaction chamber are increased, the rotation speed of the carrier in the MOCVD reaction chamber is increased, and the pressure of the MOCVD reaction chamber is reduced, so as to perform airflow adsorption treatment on the MOCVD reaction chamber.

[0013] Preferably, in the above-mentioned MOCVD reaction chamber treatment method, when the MOCVD reaction chamber is subjected to airflow adsorption treatment,

[0014] The flow rate of the edge airflow ranges from 80slm to 100slm;

[0015] The flow rate of the main airflow ranges from 500slm to 800slm;

[0016] The speed range of the carrier is 1000r / min-1200r / min;

[0017] The pressure range of the MOCVD reaction chamber is 20 torr-200 torr.

[0018] Preferably, in the above-mentioned method for treating the MOCVD reaction chamber, the pure oxidation treatment of the MOCVD reaction chamber comprises:

[0019] The MOCVD reaction chamber is subjected to pure oxidation treatment using pure oxidation gas, wherein the pure oxidation gas includes one or more mixed gases of oxygen, ozone, nitric oxide, and nitrogen dioxide.

[0020] Preferably, in the above-mentioned MOCVD reaction chamber treatment method, when the MOCVD reaction chamber is subjected to pure oxidation treatment,

[0021] The flow rate of the pure oxidizing gas is in the range of 200slm-500slm;

[0022] The time range of the pure oxidation treatment for the MOCVD reaction chamber is 0.5 hours to 2 hours.

[0023] Preferably, in the above-mentioned processing method of the MOCVD reaction chamber, the purity of the pure oxidizing gas is greater than 99.99%.

[0024] Preferably, in the above-mentioned method for treating the MOCVD reaction chamber, the gas replacement treatment of the MOCVD reaction chamber comprises:

[0025] The pure oxidizing gas remaining in the MOCVD reaction chamber is replaced with a target gas by a cyclic pumping and pressing method. The target gas includes one of H2 and N2 or a mixture of the two.

[0026] Preferably, in the above-mentioned MOCVD reaction chamber treatment method, when the MOCVD reaction chamber is subjected to gas replacement treatment by a cyclic pumping and pressing method,

[0027] The pumping pressure range is 20torr-50torr;

[0028] The stamping pressure range is 200torr-500torr;

[0029] The number of cycles ranged from 5 to 30 times.

[0030] Preferably, in the above-mentioned method for treating the MOCVD reaction chamber, the atmosphere recovery treatment of the MOCVD reaction chamber comprises:

[0031] Metal organic matter is introduced into the MOCVD reaction chamber for atmosphere recovery treatment.

[0032] Preferably, in the above-mentioned MOCVD reaction chamber treatment method, the step of introducing metal organic matter into the MOCVD reaction chamber for atmosphere recovery treatment comprises:

[0033] The metal organic compound corresponding to Al, the metal organic compound corresponding to Mg, the metal organic compound corresponding to Ga and the metal organic compound corresponding to In are sequentially introduced into the MOCVD reaction chamber for atmosphere recovery treatment.

[0034] Through the above technical solution, the present application provides a method for treating an MOCVD reaction chamber, and sequentially performs airflow adsorption treatment, pure oxidation treatment, gas replacement treatment and atmosphere recovery treatment on the MOCVD reaction chamber, and these treatment processes are performed without opening the MOCVD reaction chamber. Compared with the existing open-chamber maintenance method, the MOCVD reaction chamber will not be exposed to the atmospheric environment, thereby avoiding the situation where impurities such as water and oxygen in the atmospheric environment contaminate the MOCVD reaction chamber; and because no new impurities are introduced during the airflow adsorption treatment, pure oxidation treatment and gas replacement treatment, the time for atmosphere recovery treatment can be greatly reduced. In general, the technical solution of the present application treats the MOCVD reaction chamber based on a non-open-chamber method, which can reduce the maintenance workload of the MOCVD reaction chamber and improve production capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] The above and other features, advantages and aspects of the embodiments of the present disclosure will become more apparent with reference to the following detailed description in conjunction with the accompanying drawings. Throughout the accompanying drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and the originals and elements are not necessarily drawn to scale.

[0036] Figure 1 A schematic flow chart of a method for treating a MOCVD reaction chamber provided in an embodiment of the present invention;

[0037] Figure 2 A schematic flow chart of another method for treating a MOCVD reaction chamber provided in an embodiment of the present invention;

[0038] Figure 3 A schematic flow chart of another method for processing a MOCVD reaction chamber provided in an embodiment of the present invention;

[0039] Figure 4 A schematic flow chart of another method for treating a MOCVD reaction chamber provided in an embodiment of the present invention;

[0040] Figure 5 A schematic flow chart of another method for treating a MOCVD reaction chamber provided in an embodiment of the present invention;

[0041] Figure 6 It is a schematic diagram of data comparison between the embodiment scheme of the present application and the prior art scheme. DETAILED DESCRIPTION

[0042] The embodiments of the present application are described below in conjunction with the drawings in the embodiments of the present application. The terms used in the implementation mode of the present application are only used to explain the specific embodiments of the present application, and are not intended to limit the present application. It is known to those skilled in the art that with the development of technology and the emergence of new scenarios, the technical solutions provided in the embodiments of the present application are also applicable to similar technical problems.

[0043] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0044] It should be noted that the directional words appearing in the present invention are based on the relative position relationship shown in the drawings and cannot be used as an absolute limitation to the present application.

[0045] refer to Figure 1 , Figure 1 A schematic flow chart of a method for treating a MOCVD reaction chamber provided in an embodiment of the present invention. The method for treating a MOCVD reaction chamber provided in an embodiment of the present invention comprises:

[0046] S101: performing airflow adsorption treatment on the MOCVD reaction chamber.

[0047] S102: performing pure oxidation treatment on the MOCVD reaction chamber.

[0048] S103: performing gas replacement treatment on the MOCVD reaction chamber.

[0049] S104: performing atmosphere recovery treatment on the MOCVD reaction chamber.

[0050] Specifically, in the embodiment of the present invention, the MOCVD reaction chamber is subjected to gas flow adsorption treatment, pure oxidation treatment, gas replacement treatment and atmosphere recovery treatment in sequence, and these treatment processes are all carried out in a state where the MOCVD reaction chamber is not opened. The gas flow adsorption treatment is mainly used to adsorb impurities and particulate matter in the MOCVD reaction chamber out of the MOCVD reaction chamber to achieve the purpose of cleaning impurities and particulate matter in the MOCVD reaction chamber; the pure oxidation treatment is mainly used to consume the rich Mg environment in the MOCVD reaction chamber, and then the gas replacement treatment and atmosphere recovery treatment are carried out in sequence to achieve the growth environment for growing LED epitaxial layers.

[0051] Compared with the existing open-chamber maintenance method, the MOCVD reaction chamber will not be exposed to the atmospheric environment, thereby preventing impurities such as water and oxygen in the atmospheric environment from contaminating the MOCVD reaction chamber; since no new impurities are introduced during the gas flow adsorption treatment, pure oxidation treatment and gas replacement treatment, the time for atmosphere recovery treatment can be greatly shortened, reducing the maintenance workload of the MOCVD reaction chamber.

[0052] The MOCVD reaction chamber treatment method provided by the technical solution of the present application can extend the maintenance cycle of the MOCVD reaction chamber, reduce the maintenance frequency of the MOCVD reaction chamber, and at the same time efficiently restore the MOCVD reaction chamber to a growth environment suitable for mass production, thereby improving production capacity.

[0053] In an optional embodiment of the present invention, reference Figure 2 , Figure 2 A schematic flow chart of another method for treating a MOCVD reaction chamber provided in an embodiment of the present invention. In an embodiment of the present invention, one possible implementation of step S101 "performing an airflow adsorption treatment on the MOCVD reaction chamber" is:

[0054] S1011: closing the boundary protection airflow of the MOCVD reaction chamber, increasing the flow rate of the edge airflow and the flow rate of the main airflow of the MOCVD reaction chamber, increasing the rotation speed of the carrier in the MOCVD reaction chamber, and reducing the pressure of the MOCVD reaction chamber, and performing airflow adsorption treatment on the MOCVD reaction chamber.

[0055] Specifically, in the embodiment of the present invention, the edge gas flow includes but is not limited to H2 and N2, and the main gas flow includes but is not limited to H2 and N2.

[0056] When the MOCVD reaction chamber is subjected to airflow adsorption treatment, the flow rate of the edge airflow ranges from 80slm to 100slm, the flow rate of the main airflow ranges from 500slm to 800slm, the speed range of the carrier ranges from 1000r / min to 1200r / min, and the pressure range of the MOCVD reaction chamber ranges from 20torr to 200torr.

[0057] In this implementation, it is necessary to close the boundary protection airflow (heater purge and liner purge), increase the flow rate of the edge airflow (edge ​​gurge) and the flow rate of the main airflow (main hydride), increase the rotation speed of the carrier in the MOCVD reaction chamber, and reduce the pressure of the MOCVD reaction chamber to achieve a cleaning effect of strong adsorption without boundary airflow, that is, a "tornado"-like airflow can be formed inside the MOCVD reaction chamber, which has a strong adsorption capacity, thereby achieving the purpose of efficient cleaning of impurities and particulate matter in the MOCVD reaction chamber.

[0058] In an optional embodiment of the present invention, reference Figure 3 , Figure 3 A schematic flow chart of another method for treating a MOCVD reaction chamber provided in an embodiment of the present invention. In an embodiment of the present invention, a possible implementation method of step S102 "performing pure oxidation treatment on the MOCVD reaction chamber" is:

[0059] S1021: using pure oxidation gas to perform pure oxidation treatment on the MOCVD reaction chamber.

[0060] Specifically, in the embodiment of the present invention, the pure oxidizing gas includes one or more mixed gases of other pure oxidizing gases such as oxygen, ozone, nitric oxide, and nitrogen dioxide. The purity of the pure oxidizing gas is greater than 99.99%. When the MOCVD reaction chamber is subjected to pure oxidation treatment, the flow rate of the pure oxidizing gas ranges from 200slm to 500slm; and the time range for the pure oxidation treatment of the MOCVD reaction chamber is from 0.5 hours to 2 hours.

[0061] In this implementation, the pure oxidizing gas is used for venting, instead of the conventional venting operation exposed to the atmosphere, which has the following two advantages:

[0062] Advantage 1: It avoids the risk of water vapor and other impurities in the atmospheric environment contaminating the MOCVD reaction chamber, which increases the difficulty of re-operation and affects the performance of subsequent mass-produced epitaxial wafers. And it does not introduce new impurities.

[0063] Advantage 2: Pure oxidizing gas, combined with a high temperature environment, has a higher oxidation efficiency than the atmospheric environment. It can quickly consume the excess Mg environment inside the MOCVD reaction chamber, forming Mg oxides to exclude the MOCVD reaction chamber, greatly reducing the time of pure oxidation treatment and reducing the maintenance workload of the MOCVD reaction chamber.

[0064] In an optional embodiment of the present invention, reference Figure 4 , Figure 4 A schematic flow chart of another method for treating a MOCVD reaction chamber provided in an embodiment of the present invention. In an embodiment of the present invention, a possible implementation method of step S103 "performing a gas replacement treatment on the MOCVD reaction chamber" is:

[0065] S1031: using a cyclic pumping and pressing method to replace the pure oxidizing gas remaining in the MOCVD reaction chamber with the target gas.

[0066] Specifically, in the embodiment of the present invention, the target gas includes but is not limited to one of H2 and N2 or a mixture of the two. When the MOCVD reaction chamber is subjected to gas replacement treatment by a cyclic pumping and stamping method, the pumping and stamping pressure ranges from 20 torr to 50 torr; the stamping pressure ranges from 200 torr to 500 torr; and the number of cycles ranges from 5 to 30 times.

[0067] In this implementation, a cyclic pumping and pressing method is used for gas replacement treatment, which has the following advantages:

[0068] The target gas can completely replace the pure oxidizing gas in the MOCVD reaction chamber through multiple cycles of pumping and pressing. However, the traditional method of exposing the gas to the atmospheric environment contains water vapor, which can easily adhere to the inner wall of the MOCVD reaction chamber or the inner wall of the pipeline, making it impossible to clean it quickly.

[0069] In an optional embodiment of the present invention, reference Figure 5 , Figure 5 A schematic flow chart of another method for treating a MOCVD reaction chamber provided in an embodiment of the present invention. In an embodiment of the present invention, a possible implementation method of step S104 "performing atmosphere recovery treatment on the MOCVD reaction chamber" is:

[0070] S1041: introducing metal organic matter into the MOCVD reaction chamber for atmosphere recovery treatment.

[0071] Specifically, in the embodiment of the present invention, the metal organic compound corresponding to Al, the metal organic compound corresponding to Mg, the metal organic compound corresponding to Ga, and the metal organic compound corresponding to In are sequentially introduced into the MOCVD reaction chamber for atmosphere recovery treatment. In other words, the metal organic compounds corresponding to Al, Mg, Ga, and In can be introduced into the MOCVD reaction chamber in the order of high temperature environment, and the specific operation is: the metal organic compound introduced first is the metal organic compound of Al, and the metal organic compounds introduced secondly are the metal organic compounds of Mg, Ga, and In in order.

[0072] Since no new impurities are introduced into the MOCVD reaction chamber during the above operation, the subsequent atmosphere recovery treatment time can be greatly reduced from the original maintenance and recovery coating program time of 15 hours to 20 hours to 1 hour to 1.5 hours this time.

[0073] The following is a further explanation of the technical solution of the present application and the technical effects that can be achieved by the technical solution of the present application by way of comparison. Figure 6 , Figure 6 It is a schematic diagram of data comparison between the embodiment scheme of the present application and the prior art scheme.

[0074] Embodiment scheme of this application:

[0075] Step 1: Set the pressure of the MOCVD reaction chamber to 50 torr, the speed of the carrier to 1200 r / min, the temperature to 600°C, turn off the boundary protection gas flow, and simultaneously set the flow rates of the edge gas flows of N2 and H2 to 50 slm and 50 slm respectively, and the flow rates of the main gas flows of N2 and H2 to 200 slm and 400 slm respectively. The treatment time lasts for 1 hour, and airflow adsorption treatment is performed.

[0076] Step 2: Increase the pressure of the MOCVD reaction chamber to 500torr, reduce the speed of the carrier to 200r / min, increase the temperature to 1000℃, turn off all N2 and H2 gas flows, and introduce 400slm of pure oxidizing gas at the same time, perform high-temperature oxidation treatment for 2 hours, and carry out pure oxidation treatment.

[0077] Step 3: Turn on the N2 / H2 boundary protection gas flow, keep the temperature unchanged, increase the speed of the carrier to 800r / min, and perform cyclic pumping and pressing treatments with a pumping and pressing pressure of 20torr and a pressing pressure of 500torr. The number of cycles is 15, and the single pumping and pressing time is 2min, and gas replacement treatment is performed.

[0078] Step 4: Raise the temperature of the MOCVD reaction chamber to 1200°C, first introduce TMAl (trimethylaluminum) with a flow rate of 400sccm of Al metal organic matter for 10 minutes; then introduce Cp2Mg (dicyclopentadienyl magnesium) with a flow rate of 5000sccm for 60 minutes; then turn off TMAL, reduce the flow rate of Cp2Mg to 100sccm, and introduce TMGa (trimethylgallium) with a flow rate of 400sccm and TMIn (trimethylindium) with a flow rate of 2000sccm for 20 minutes to perform atmosphere recovery treatment. Finally, turn off all MO sources, cool to room temperature, and the pretreatment is completed.

[0079] Existing technical solutions:

[0080] Step 1: Run the MOCVD reaction chamber for 1 hour without baking to remove the residual MO source in the MOCVD reaction chamber to prevent the residual MO source from reacting with air and catching fire when the chamber is opened for maintenance.

[0081] Step 2: Open the MOCVD reaction chamber and perform maintenance and cleaning, which takes about 3.5 hours.

[0082] Step 3: Close the MOCVD reaction chamber and perform the Mg Coating process, also known as re-coating, to restore the growth environment of the MOCVD reaction chamber, which takes about 20 hours.

[0083] based on Figure 6 It can be seen from the comparison structure shown that the total processing time of the MOCVD reaction chamber using the embodiment of the present application is 5 hours, and the total processing time of the MOCVD reaction chamber using the prior art solution is 24.5 hours. It can be seen that the technical solution of the present application processes the MOCVD reaction chamber based on the non-opening method, which can reduce the maintenance workload of the MOCVD reaction chamber and improve production capacity.

[0084] The above is a detailed introduction to a method for processing an MOCVD reaction chamber provided by the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as limiting the present invention.

[0085] It should be noted that each embodiment in this specification is described in a progressive manner, and each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part description.

[0086] It should also be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device that includes a series of elements is inherent to the elements, or also includes elements inherent to these processes, methods, articles or devices. In the absence of further restrictions, the elements defined by the sentence "including a..." do not exclude the presence of other identical elements in the process, method, article or device that includes the elements.

[0087] The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A method for processing a MOCVD reaction chamber, characterized in that: The processing method of the MOCVD reaction chamber includes: performing an airflow adsorption treatment on the MOCVD reaction chamber; Performing pure oxidation treatment on the MOCVD reaction chamber; Performing a gas replacement treatment on the MOCVD reaction chamber; The MOCVD reaction chamber is subjected to atmosphere recovery treatment.

2. The method for processing an MOCVD reaction chamber according to claim 1, characterized in that: The step of performing airflow adsorption treatment on the MOCVD reaction chamber comprises: The boundary protection airflow of the MOCVD reaction chamber is closed, the flow rate of the edge airflow and the flow rate of the main airflow of the MOCVD reaction chamber are increased, the rotation speed of the carrier in the MOCVD reaction chamber is increased, and the pressure of the MOCVD reaction chamber is reduced, so as to perform airflow adsorption treatment on the MOCVD reaction chamber.

3. The method for processing an MOCVD reaction chamber according to claim 2, characterized in that: When the MOCVD reaction chamber is subjected to airflow adsorption treatment, The flow rate of the edge airflow ranges from 80slm to 100slm; The flow rate of the main airflow ranges from 500slm to 800slm; The speed range of the carrier is 1000r / min-1200r / min; The pressure range of the MOCVD reaction chamber is 20 torr-200 torr.

4. The method for processing an MOCVD reaction chamber according to claim 1, characterized in that: The pure oxidation treatment of the MOCVD reaction chamber comprises: The MOCVD reaction chamber is subjected to pure oxidation treatment using pure oxidation gas, wherein the pure oxidation gas includes one or more mixed gases of oxygen, ozone, nitric oxide, and nitrogen dioxide.

5. The method for processing an MOCVD reaction chamber according to claim 4, characterized in that: When the MOCVD reaction chamber is subjected to pure oxidation treatment, The flow rate of the pure oxidizing gas is in the range of 200slm-500slm; The time range of the pure oxidation treatment for the MOCVD reaction chamber is 0.5 hours to 2 hours.

6. The method for processing an MOCVD reaction chamber according to claim 4, characterized in that: The purity of the pure oxidizing gas is greater than 99.99%.

7. The method for processing an MOCVD reaction chamber according to claim 4, characterized in that: The gas replacement process for the MOCVD reaction chamber comprises: The pure oxidizing gas remaining in the MOCVD reaction chamber is replaced with a target gas by a cyclic pumping and pressing method. The target gas includes one of H2 and N2 or a mixture of the two.

8. The method for processing an MOCVD reaction chamber according to claim 7, characterized in that: When the MOCVD reaction chamber is subjected to gas replacement treatment by a cyclic pumping and pressing method, The pumping pressure range is 20torr-50torr; The stamping pressure range is 200torr-500torr; The number of cycles ranged from 5 to 30 times.

9. The method for processing an MOCVD reaction chamber according to claim 1, characterized in that: The step of performing atmosphere recovery treatment on the MOCVD reaction chamber comprises: Metal organic matter is introduced into the MOCVD reaction chamber for atmosphere recovery treatment.

10. The method for processing an MOCVD reaction chamber according to claim 9, characterized in that: The step of introducing metal organic matter into the MOCVD reaction chamber for atmosphere recovery treatment comprises: The metal organic compound corresponding to Al, the metal organic compound corresponding to Mg, the metal organic compound corresponding to Ga and the metal organic compound corresponding to In are sequentially introduced into the MOCVD reaction chamber for atmosphere recovery treatment.

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