Normal-temperature dynamic aging device and method for radio frequency digital mixed signal microsystem

Abstract

The invention provides a normal-temperature dynamic aging device and method for a radio frequency digital mixed signal microsystem. The normal-temperature dynamic aging device comprises an aging control processor, a programmable clock generator and a microsystem aging test station, wherein the programmable clock generator and the microsystem aging test station are electrically connected with the aging control processor; the radio frequency digital mixed signal microsystems to be tested are connected to the microsystem aging test stations, the number of the microsystem aging test stations is one or more than one, and each microsystem aging test station can independently carry out aging test and temperature control on one radio frequency digital mixed signal microsystem to be tested. By reasonably designing systems and methods for temperature control, state monitoring, chip temperature detection and control and the like of a micro-system aging test station and an aging device, the requirement for high-consistency accurate temperature control among multiple chips in a micro-system is met, and the micro-system aging device does not need an incubator; the adopted aging method is easy for cascade expansion, can be suitable for aging of microsystems in different batch scales, and is convenient for automatic monitoring and manual inspection.

Description

Technical Field

[0001] The invention relates to the field of measurement and testing technology, and in particular to a room-temperature dynamic aging device and method for a radio frequency digital mixed signal microsystem. Background Art

[0002] Burn-in test is the difficulty and key point in the reliability screening test process of integrated circuits, especially for products such as RF digital mixed signal microsystems with complex functions, high power and a large number of interface IOs. The customized design of the burn-in device is the core design content of this type of microsystem screening test.

[0003] RF digital mixed signal microsystems usually have the characteristics of high power consumption, complex power supply, and complex interface IO; the maximum power consumption of a single microsystem can reach tens of watts, and it often has more than five power supply voltages, especially low-voltage and high-current requirements are very high. A single microsystem may require a 1.0V power supply of more than 10A, and this type of low-voltage power supply has higher voltage accuracy requirements, and even requires the voltage value to be within ±3%; conventional burn-in test equipment usually uses a temperature chamber to provide a high temperature environment. Considering the ambient operating temperature of up to 125°C, it is necessary to reduce the high-power or low-life components on the burn-in test equipment as much as possible. Therefore, external test equipment or modules are usually used to provide power supply and clock for the components on the burn-in test equipment; but conventional integrated circuit test equipment is difficult to provide complex power supply, especially it cannot support low-voltage and high-current batch power supply; on the other hand, this type of low-voltage and high-current power supply requires a very low power transmission impedance, which is not conducive to external cable power supply, and is more suitable for power supply by integrating power modules on the PCB board to reduce the length and line resistance of the power supply line.

[0004] Therefore, such complex microsystems usually need to integrate more complex power supplies, clocks and even auxiliary test units on the aging test equipment. Among them, more multi-component devices (such as power supplies) are not suitable for working at an ambient temperature of 125°C for a long time and are easily damaged. They also have high maintenance costs and are difficult. At the same time, such complex microsystems themselves have high power consumption and costs, and require more precise independent temperature control to avoid product damage. In addition, RF digital mixed signal microsystems involve a large number of various RF transceiver signals, high-speed or low-speed digital signals, usually more than several hundred, and the cable connections are complex, and they are not suitable for operation and testing in an incubator.

[0005] In addition, unlike monolithic integrated circuits, since multiple chips are integrated inside the microsystem, the power consumption, package thermal resistance, and maximum allowable junction temperature of different chips are different. For example, when the temperature of all chips is required to reach 125°C, the temperature of one chip has reached 125°C, while the temperature of another chip may be only 115°C, which cannot achieve the required aging effect; or the aging junction temperature requirement for one chip is 125°C, while the aging junction temperature of another chip is only allowed to be 110°C; at this time, it is necessary to be able to take certain aging temperature control measures for each chip in the microsystem to achieve more precise aging temperature control and achieve the aging effect while avoiding damage to the microsystem.

[0006] Therefore, it is necessary to design a room-temperature dynamic aging device and method for RF digital mixed signal microsystems according to the actual working needs of specific microsystems, complete the aging test in a room temperature environment without a temperature box, improve the aging temperature consistency between multiple chips in the package, further simplify the test complexity, and facilitate large-scale cascade expansion. Summary of the invention

[0007] The present invention aims to solve the problem of dynamic aging of large-scale complex microsystems, and provides a room-temperature dynamic aging device and method for a radio-frequency digital mixed signal microsystem. By reasonably designing the temperature control, state monitoring, chip temperature detection and control systems and methods of the microsystem aging test station and the aging device, the precise temperature control requirements of high consistency between multiple chips in the microsystem are met, and a microsystem aging device without a temperature box is realized; in the entire aging device, only the microsystem that needs to be aged is in a high-temperature working environment, while other circuits and cables work at room temperature, which can effectively improve the service life and convenience of the aging device; at the same time, a multi-level pluggable replacement design is used in the design of the present invention. While customizing the microsystem aging device, the hardware modules are reused as much as possible, which effectively improves the design compatibility and maintainability of the aging device; in addition, the aging method adopted is easy to cascade and expand, can be applicable to microsystem aging under different batch sizes, and is convenient for automated monitoring and manual inspection.

[0008] The present invention provides a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem, comprising an aging control processor, a programmable clock generator electrically connected to the aging control processor, and a microsystem aging test station;

[0009] The radio frequency digital mixed signal microsystem to be tested is connected to a microsystem aging test station. The number of microsystem aging test stations is 1 or more. Each microsystem aging test station can independently perform aging test and temperature control of a radio frequency digital mixed signal microsystem to be tested.

[0010] The microsystem burn-in test station includes a test station body, an MCU and a microsystem burn-in test fixture connected to the test station body, an adjustable power supply module connected to the MCU and the microsystem burn-in test fixture, and a burn-in program configuration memory connected to the radio frequency digital mixed signal microsystem to be tested;

[0011] The aging control processor communicates with the host computer through the Gigabit Ethernet port, receives the aging control instructions from the host computer, and reports the data and status information of all microsystem aging test stations to the host computer; the aging control processor completes data communication with the MCU through the serial interface, sends the aging control instructions to the MCU, and receives the data and status information reported by the MCU; the aging control processor controls the programmable clock generator through the serial interface to generate at least two reference clocks of specified frequencies for use by each microsystem aging test station;

[0012] The microsystem aging test fixture includes a test socket connected to the RF digital mixed signal microsystem to be tested, a heat sink connected to the top of the test socket, a heating device connected to the inside of the heat sink, and a temperature detection device connected to the bottom of the heat sink; the test socket provides a repeatedly disassembled electrical connection between the RF digital mixed signal microsystem to be tested and the PCB board of the test station body, the heat sink is in direct contact with the upper surface of the RF digital mixed signal microsystem to be tested, assists in heat dissipation and temperature control, and when the heating device is powered on, only the heat sink and the RF digital mixed signal microsystem to be tested are heated together; the temperature detection device is in direct contact with the upper surface of the RF digital mixed signal microsystem to be tested and tests the shell temperature and reports it to the MCU.

[0013] The room temperature dynamic aging device of a radio frequency digital mixed signal microsystem described in the present invention, as a preferred embodiment, the radio frequency digital mixed signal microsystem to be tested includes a programmable information processing circuit, a radio frequency signal transceiver circuit, a dynamic storage unit and a static storage unit;

[0014] The programmable information processing circuit configures and controls the dynamic aging of the RF signal transceiver circuit, dynamic storage unit and static storage unit, and detects the aging status and reports the status data to the MCU;

[0015] The RF digital mixed signal microsystem to be tested integrates M chips inside. The temperature detection device includes at least two detection points, which contact different areas on the upper surface of the RF digital mixed signal microsystem to be tested. Each detection point corresponds to the center position of a chip inside the RF digital mixed signal microsystem to be tested and detects the chip temperature and reports it to the MCU respectively. Among them, the monitoring temperature of chip No. 1 is T C1 ,…, the monitoring temperature of chip M is T CM , T C1 ,…,T CMThe shell temperature is used to control the aging temperature of the RF digital mixed signal microsystem to be tested;

[0016] The junction temperatures of the M chips in the RF digital mixed signal microsystem to be tested are T J1 , T J2 , T J3 and T JM The programmable information processing circuit collects the junction temperature of each chip through the internal communication of the RF digital mixed signal microsystem to be tested and reports it to the MCU and the aging control processor; when the MCU controls the temperature, it takes the highest junction temperature of each chip as the junction temperature T of the RF digital mixed signal microsystem to be tested. J and control the temperature;

[0017] The burn-in program of each RF digital mixed signal microsystem chip to be tested has high-power mode, medium-power mode and low-power mode. When the shell temperature difference of multiple chips exceeds the threshold, the MCU notifies the programmable information processing circuit through the state control interface to increase or decrease the power of the chip by adjusting the communication rate, clock frequency and resource amount to perform local temperature increase or decrease.

[0018] At the initial operation, each chip in the RF digital mixed signal microsystem to be tested is in the medium power mode, and the programmable information processing circuit is used as chip No. 1 to control the aging power mode of the chips other than chip No. 1;

[0019] When chip N monitors the temperature T CN Greater than T C1 When the temperature T reaches 105%, the MCU notifies the programmable information processing circuit to reduce the aging power of chip N. CN Less than T C1 When the temperature of all chips except chip 1 is greater than T C1 When the temperature of all chips except chip 1 is less than T C1 When the power consumption reaches 95%, the MCU notifies the programmable information processing circuit to reduce its own aging power.

[0020] The room temperature dynamic aging device of a radio frequency digital mixed signal microsystem described in the present invention, as a preferred embodiment, the radio frequency signal transceiver circuit includes at least two radio frequency transmission channels and at least two radio frequency receiving channels, each radio frequency channel is connected to a micro system aging test station through a micro system aging test fixture, and the micro system aging test station is connected to a radio frequency receiving channel through a capacitor to perform a self-loop of the transmission and reception of radio frequency signals;

[0021] The programmable information processing circuit includes at least two groups of high-speed IO interfaces, each group of high-speed IO interfaces is connected to a microsystem aging test station through a microsystem aging test fixture, and each group of high-speed IO interface output ports is connected to the input port of the same group through a capacitor to perform self-loop transmission and reception of the high-speed IO interface;

[0022] The programmable information processing circuit includes at least two general IO ports, each of which is connected to a microsystem aging test station through a microsystem aging test fixture, and a pull-up resistor and a pull-down resistor are respectively connected to each general IO port on the microsystem aging test station; one end of the pull-up resistor is connected to the general IO port, and the other end is connected to a power supply; one end of the pull-down resistor is connected to the general IO port, and the other end is connected to a ground;

[0023] The status data reported by the RF digital mixed signal microsystem to be tested includes the unique identification code ID of the RF digital mixed signal microsystem to be tested, the junction temperature of the RF digital mixed signal microsystem to be tested, the aging power mode status of each chip, the RF transceiver data clock lock indication, the RF signal transceiver circuit local oscillator lock indication, the programmable information processing circuit self-test status and error count, the high-speed IO interface self-test status and error count, the dynamic memory read and write self-test status and error count, and the static memory read and write self-test status and error count;

[0024] The burn-in control processor receives the data reported by each microsystem burn-in test station, including: the voltage and current of each supply line of the adjustable power module, the status data reported by the RF digital mixed signal microsystem to be tested, and the shell temperature T C , the junction temperature T of the RF digital mixed signal microsystem to be tested J and MCU status data; the burn-in control processor calculates the total power consumption of the RF digital mixed signal microsystem to be tested based on the reported power supply voltage and current of each channel; when a microsystem burn-in test station has a total power consumption, each channel voltage or current, and the shell temperature T C 、Junction temperature T of the RF digital mixed signal microsystem to be tested J When any data exceeds the maximum value preset by the user, the MCU at the workstation is notified to power off, and the fault data is recorded to indicate the cause of the fault.

[0025] The room temperature dynamic aging device of the radio frequency digital mixed signal microsystem described in the present invention, as a preferred embodiment, the heat dissipation device comprises a metal heat sink located on the side of the radio frequency digital mixed signal microsystem to be tested and an adjustable speed heat dissipation fan directly in contact with the upper surface of the radio frequency digital mixed signal to be tested;

[0026] When the MCU receives the burn-in start command and control temperature parameters from the burn-in control processor, it controls the adjustable power supply module to supply power to the RF digital mixed signal microsystem to be tested and the heating device; at the same time, it compares the shell temperature T of the RF digital mixed signal microsystem to be tested reported by the temperature detection device. C and the junction temperature T reported autonomously by the RF digital mixed signal microsystem to be tested J ;

[0027] When T C and T J When the absolute value of the difference does not exceed 5℃, take T C and T J The average value is taken as the temperature detection result; when T C and T J When the absolute value of the difference is greater than 5°C, the adjustable power supply module of the microsystem aging test station is controlled to stop the power supply of the RF digital mixed signal microsystem to be tested, and report the error alarm status information to the aging control processor;

[0028] When the shell temperature T C When the temperature is lower than the required control temperature, the heating device is powered on and the fan of the heat dissipation device is turned off or the speed is reduced;

[0029] When the shell temperature T C When the temperature is higher than the required control temperature, disconnect the power supply of the heating device or increase the fan speed of the heat dissipation device;

[0030] Each adjustable power supply module includes at least two power supplies, and the voltage value of each power supply can be adjusted by the resistance value of an external feedback resistor; the adjustable power supply module includes a voltage monitoring channel and a serial interface, and the MCU controls the adjustable power supply module to turn on or off the power supply output through the serial interface. The adjustable power supply module monitors the actual power supply voltage output to the RF digital mixed signal microsystem or heating device to be tested through the voltage monitoring channel, adjusts the output voltage according to the feedback result, and reports the voltage and current of each power supply to the MCU;

[0031] The adjustable power module is a universal micro power module independently designed based on a PCB board, which can be electrically connected and installed with the test station body through a standard connector;

[0032] The electrical connections provided by the standard connectors include: the power input provided by the microsystem burn-in test station to the adjustable power module, the multi-channel power supply output by the adjustable power module, the communication serial port and control IO between the MCU and the adjustable power module;

[0033] A feedback resistor for adjusting the voltage value of each supply line of the adjustable power module is installed on the test station body, and the feedback resistor is connected to the feedback IO port of the adjustable power module through a standard connector;

[0034] The microsystem burn-in test station also includes a status display module connected to the MCU, an LED connected to the radio frequency digital mixed signal microsystem to be tested, and a memory socket connecting the burn-in program configuration memory to the test station body;

[0035] The status display module is provided with an LCD screen, and the MCU can control the status display module to scroll and display the working status of the microsystem aging test station, which includes the voltage and current of each power supply and the monitoring status reported by the RF digital mixed signal microsystem to be tested;

[0036] The programmable information processing circuit of the radio frequency digital mixed signal microsystem to be tested can detect the operating state of its own programmable logic and the high-speed IO transceiver state, and also detect the transceiver state of the radio frequency signal transceiver circuit of the radio frequency digital mixed signal microsystem to be tested and the read and write state of the dynamic storage unit and the static storage unit, and output the state identification signal of each part through an output port respectively, and each output port is independently connected to an LED on the microsystem aging test station through a microsystem aging test fixture; when the aging of each part works normally, the output port outputs a high level and lights up the corresponding LED; when the aging work is abnormal, the output port outputs a low level and the corresponding LED does not light up;

[0037] The memory socket is welded on the test station body so that the aging program configuration memory can be plugged in and replaced at will.

[0038] The present invention provides an aging method for a room temperature dynamic aging device of a radio frequency digital mixed signal microsystem, comprising the following steps:

[0039] S1. Turn on the external power supply to power the room temperature dynamic aging device. The aging control processor starts the initial program, detects the working status of the device, and notifies the host computer after confirming that the working status is normal;

[0040] S2. The user sets the preset working state requirements of each microsystem burn-in test station through the host computer software, including whether to start, burn-in temperature control temperature, maximum power consumption allowed, and maximum current of each power supply, and sends instructions to the burn-in control processor at one time;

[0041] S3, after receiving the instruction, the burn-in control processor notifies the MCU of the corresponding microsystem burn-in test station to start burn-in according to the instruction requirements, and sets the configurable clock generator to provide a reference clock for the microsystem burn-in test station;

[0042] S4, after receiving the startup request, each MCU controls the adjustable power supply module to supply power to the RF digital mixed signal microsystem to be tested, and starts the RF digital mixed signal microsystem to be tested;

[0043] S5, when the RF digital mixed signal microsystem to be tested is started, the pre-configured burn-in program is read from the burn-in program configuration memory to start dynamic burn-in; during the burn-in process, the programmable information processing circuit of the RF digital mixed signal microsystem to be tested continuously detects the operation correctness of the internal programmable information processing circuit according to the burn-in program and records the operation status;

[0044] The programmable information processing circuit outputs a 1MHz square wave signal from each general IO port and continuously outputs a set of designed incremental data frames from each group of high-speed IO interfaces. After passing through the coupling capacitor on the PCB board of the test station body, it is looped back to the input end of the high-speed IO port of this group. The programmable information processing circuit verifies the correctness of the data frame and monitors the working status of the high-speed IO interface.

[0045] The programmable information processing circuit controls the radio frequency signal transceiver circuit of the radio frequency digital mixed signal microsystem to be tested to complete the initialization configuration, detect the VCO locking state, and after confirming normal operation, send the specified modulation signal from each radio frequency transmitting port respectively, pass through the coupling capacitor on the PCB board of the test station body, and then loop back to the corresponding radio frequency receiving port. The programmable information processing circuit demodulates the received data and monitors the working state of the radio frequency transceiver circuit; the programmable information processing circuit regularly writes a group of preset data into the dynamic storage unit and the static storage unit of the radio frequency digital mixed signal microsystem to be tested, and then reads back to compare the correctness of the data, thereby completing an aging method for a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem.

[0046] The aging method of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem described in the present invention is, as a preferred mode, in step S5, during each dynamic aging process, the static storage unit only writes data once at the initial power-on, and continuously reads back the data during subsequent work to compare the data correctness; the dynamic storage unit writes new data each time at a fixed time, and then reads back to confirm its correctness;

[0047] During the aging process, the status monitoring of the programmable information processing circuit, general IO port, high-speed IO interface and radio frequency signal transceiver circuit is continuously carried out, the dynamic storage unit is checked for read and write every 5 to 10 seconds, and the static storage unit is checked for data read out every 30 seconds.

[0048] The aging method of a room temperature dynamic aging device of a radio frequency digital mixed signal microsystem described in the present invention is, as a preferred mode, in step S5, the radio frequency digital mixed signal microsystem to be tested outputs the detected programmable information processing circuit operation status, high-speed IO transceiver status, radio frequency signal transceiver circuit transceiver status, dynamic storage unit read and write status and static storage unit read and write status to the LED on the test station body PCB using an output port respectively; when the aging of each part works normally, the corresponding LED is lit to quickly determine the aging status of the microsystem.

[0049] The aging method of a room temperature dynamic aging device of a radio frequency digital mixed signal microsystem described in the present invention is, as a preferred mode, in step S5, the radio frequency digital mixed signal microsystem to be tested packages the self-test status information and the unique identification code ID, the microsystem junction temperature and the aging power mode status of each chip into a data frame, and sends it to the MCU through the serial interface at a regular time to determine whether the aging work of the radio frequency digital mixed signal microsystem to be tested is normal;

[0050] The microsystem unique identification code ID is the factory serial number of each RF digital mixed signal microsystem to be tested, and serves as the identification code of the RF digital mixed signal microsystem to be tested, and is used to identify and match its aging test data in subsequent data processing;

[0051] Determine the internal operating temperature of the RF digital mixed signal microsystem to be tested by the junction temperature of the RF digital mixed signal microsystem to be tested to ensure that the product is not damaged;

[0052] The self-test status information includes the RF transceiver data clock lock indication, the RF signal transceiver circuit local oscillator lock indication, the programmable information processing circuit self-test status and error count, the high-speed IO interface self-test status and error count, the dynamic storage unit read and write self-test status and error count, and the static storage unit read and write self-test status and error count;

[0053] The MCU periodically reads all the supply voltage and current data of the adjustable power module and the microsystem shell temperature T tested by the temperature detection device. C , and then packaged and sent to the aging control processor;

[0054] The temperature detection device is equipped with multiple detection points, which contact different areas on the upper surface of the microsystem respectively, to detect the temperature of each important chip integrated inside the microsystem. The monitoring temperature of chip No. 1 is T C1 , the monitoring temperature of chip M is T CM The corresponding temperatures are reported to the MCU to control the microsystem aging temperature.

[0055] The present invention discloses a method for aging a radio frequency digital mixed signal microsystem at room temperature dynamic aging. As a preferred method, when temperature difference control is performed between multiple chips in the radio frequency digital mixed signal microsystem to be tested, when the aging temperature requirements of different chips in the radio frequency digital mixed signal microsystem to be tested are different, the aging setting temperature of chip x is T x , the set temperature of chip y is T y , and T x >T y , when T Cx Greater than T Cx -105%, reduce the aging power of chip y, when T Cy Less than T Cx - when the aging power of chip y is increased;

[0056] When the aging is finished and the cooling phase begins, the MCU notifies the programmable information processing circuit to put all chips into low-power mode until the cooling is completed.

[0057] The aging method of a room temperature dynamic aging device of a radio frequency digital mixed signal microsystem described in the present invention, as a preferred mode, the operating state of the heating device under the control of the MCU includes full power operation, half power operation and shutdown, and the adjustable speed cooling fan of the heat dissipation device can adjust the speed under the control of the MCU;

[0058] During initial operation, the MCU controls the heating device to run at full power and the cooling fan to be turned off until the temperature detection result of the RF digital mixed signal microsystem to be tested is only 5°C lower than the preset aging temperature, at which time the MCU controls the adjustable speed cooling fan to turn on and run at a low speed; when the temperature detection result of the RF digital mixed signal microsystem to be tested is 1°C higher than the preset aging temperature, the MCU controls the heating device to run at half power and increases the speed of the adjustable speed cooling fan over time; when the temperature detection result of the RF digital mixed signal microsystem to be tested is 3°C higher than the preset aging temperature, the MCU controls the heating device to be turned off and the adjustable speed cooling fan to run at the highest speed; when the temperature detection result of the RF digital mixed signal microsystem to be tested is again 1°C lower than the preset aging temperature, the MCU controls the heating device to run at half power and reduces the speed of the adjustable speed cooling fan over time; when the temperature detection result of the RF digital mixed signal microsystem to be tested is 3°C lower than the preset aging temperature, the MCU controls the heating device to run at full power.

[0059] The present invention provides a room temperature dynamic aging device and method for a radio frequency digital mixed signal microsystem, comprising: an aging control processor, a programmable clock generator and a plurality of microsystem aging test stations; each aging test station contains an independent MCU, a microsystem aging test fixture, a program configuration memory, a status display module, an LED and a plurality of adjustable power modules; the aging control processor sends the control instructions received from the host computer to the MCU of each aging test station, the MCU controls the dynamic aging of the microsystem of this station, and reports the aging data and status information to the aging control processor, the aging control processor collects and analyzes the aging data, and finally reports it to the host computer. The MCU controls the radio frequency digital mixed signal microsystem to reach the preset temperature requirement by controlling the heating device and the heat dissipation device, and controls the adjustable power module to cut off the power when an aging abnormality occurs. The temperature detection device of the aging test fixture has multiple temperature detection points for detecting the respective temperatures of multiple chips integrated in the microsystem; when the temperature difference of each chip is large, the MCU notifies the programmable information processing circuit in the microsystem to increase or reduce the aging power of the corresponding chip to ensure the consistency of the temperature of each chip.

[0060] The present invention has the following advantages:

[0061] (1) The microsystem aging method proposed in the present invention can achieve more accurate aging temperature control for each chip in the microsystem according to the different power, actual temperature and aging allowable temperature of each chip in the microsystem.

[0062] (2) The room temperature dynamic aging device and method for RF digital mixed signal microsystems proposed in the present invention can complete the dynamic aging of large-scale complex microsystems at room temperature without the need for a temperature chamber. It can effectively improve the working life of peripheral complex circuits and is more convenient to use.

[0063] (3) Compared with the traditional aging scheme, the method used in the present invention has more precise temperature control, is less likely to damage large-scale complex microsystems of high value, and is safer and more reliable; at the same time, the energy consumption of the independent heating station design is much lower than that of the temperature box, and the energy consumption and cost are lower.

[0064] (4) The present invention adopts a multi-level pluggable and replaceable design, which maximizes the hardware and software reusability between different customized microsystem aging devices, improves design efficiency and reduces costs.

[0065] (5) The present invention simplifies the peripheral circuit connection of the RF digital mixed signal microsystem as much as possible, while ensuring good cascade expansion capability; when the quantity of each production batch of high-value complex microsystems varies greatly, cascade expansion can be used to quickly adapt to the dynamic aging of microsystems of different quantities and batches. BRIEF DESCRIPTION OF THE DRAWINGS

[0066] Figure 1It is a schematic diagram of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem;

[0067] Figure 2 A schematic diagram of a microsystem aging test fixture for a room temperature dynamic aging device of a radio frequency digital mixed signal microsystem;

[0068] Figure 3 It is a schematic diagram of the temperature detection points of a microsystem by an aging test fixture of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem;

[0069] Figure 4 The present invention is a flow chart of an aging method of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem.

[0070] Reference numerals:

[0071] 1. Burn-in control processor; 2. Programmable clock generator; 3. Microsystem burn-in test station; 31. Test station body; 32. MCU; 33. Microsystem burn-in test fixture; 331. Test socket; 332. Heat dissipation device; 3321. Metal heat sink; 3322. Adjustable speed cooling fan; 333. Heating device; 334. Temperature detection device; 34. Adjustable power supply module; 35. Burn-in program configuration memory; 36. Status display module; 37. LED; 38. Memory socket; 4. RF digital mixed signal microsystem to be tested; 41. Programmable information processing circuit; 411. High-speed IO interface; 412. General IO; 42. RF signal transceiver circuit; 43. Dynamic storage unit; 44. Static storage unit. DETAILED DESCRIPTION

[0072] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0073] Example 1

[0074] like Figures 1 to 4 As shown, a room temperature dynamic aging device and method for a radio frequency digital mixed signal microsystem, the room temperature dynamic aging device comprises an aging control processor 1, a programmable clock generator 2 and a plurality of microsystem aging test stations 3;

[0075] Each aging test station 3 includes a test station body 31, an independent MCU 32, a microsystem aging test fixture 33, a plurality of adjustable power modules 34, a program configuration memory 35, a status display module 36, an LED 37 and a memory socket 38;

[0076] The aging control processor 1 communicates with the host computer through the Gigabit Ethernet port 1, receives the aging control instructions of the host computer, and reports the data and status information of all aging test stations 3 to the host computer; the aging control processor 1 completes data communication with the MCU 32 on the microsystem aging test station 3 through the serial interface, sends the aging control instructions to the MCU 32 of the aging test station 3, and receives the data and status information reported by the MCU 32; the aging control processor 1 controls the configurable clock generator 2 through the serial interface to generate multiple reference clocks of specified frequencies, which are provided to each microsystem aging test station 3 for use;

[0077] The microsystem aging test fixture 33 includes a test socket 331, a heat sink 332, a heating device 333 and a temperature detection device 334; the test socket 331 is used to place the RF digital mixed signal microsystem 4 to be tested, mainly to provide a removable electrical connection between the microsystem 4 and the PCB board of the aging test station body 31; the heat sink 332 is placed on the top of the test socket 331, in direct contact with the upper surface of the microsystem 4, to assist in heat dissipation and temperature control; the heating device 333 is placed inside the heat sink 332, and when powered on, the entire heat sink 332 and the microsystem 4 can be heated together; the temperature detection device 334 is located at the bottom of the heat sink 332, in direct contact with the upper surface of the microsystem 4, to test the shell temperature of the microsystem 4, and report it to the MCU 32.

[0078] The heat dissipation device 332 includes two parts: a metal heat sink 3321 and a heat dissipation fan 3322 with adjustable speed.

[0079] The RF digital mixed signal microsystem 4 to be tested has a programmable information processing circuit 41, a RF signal transceiver circuit 42, a dynamic storage unit 43 and a static storage unit 44; the programmable information processing circuit 41 is responsible for configuring and controlling the dynamic aging work of the other three parts, while detecting the aging status of the microsystem 4 and reporting the status data to the MCU 32.

[0080] The temperature detection device 334 has multiple detection points, which contact different areas on the upper surface of the microsystem 4 respectively. Each detection point corresponds to the center position of a chip inside the microsystem 4 and is used to detect the temperature of the chip. The monitoring temperature of chip No. 1 is T C1 , the monitoring temperature of chip M is T CM , respectively reported to MCU 32 for accurately controlling the aging temperature of the microsystem 4.

[0081] While each chip in the microsystem 4 meets the conditions required for aging, the aging program of each chip has high, medium and low power mode states; when the shell temperatures of multiple chips differ greatly, the MCU 32 can notify the programmable information processing circuit 41 through the state control interface to increase or decrease the power of a specific chip and improve the consistency of the temperature of each chip.

[0082] At the initial operation, each chip in the microsystem 4 is in the medium power mode; the programmable information processing circuit 41 is the No. 1 chip, responsible for controlling the aging power mode of other chips; when the shell temperature T CN Greater than T C1 When the shell temperature T of chip N reaches 105%, MCU32 notifies programmable information processing circuit 41 to reduce the aging power of chip N. CN Less than T C1 When the shell temperature of all other chips is greater than T C1 When the shell temperature of all other chips is less than T C1 When the power consumption is 95%, the MCU 32 notifies the programmable information processing circuit 41 to reduce its own aging power.

[0083] The power of a specific chip can be adjusted by adjusting the communication rate, various clock frequencies, and resource amounts to perform local temperature increase or decrease. For example, increasing the communication rate of a chip from 1 GHz to 2 GHz can significantly increase the power of the chip.

[0084] Each adjustable power supply module 34 includes multiple power supplies, and the voltage value of each power supply can be adjusted by the resistance value of an external feedback resistor; the adjustable power supply module 34 has a voltage monitoring channel and a serial interface, and the MCU 32 can control the adjustable power supply module 34 to turn on or off the power supply output through the serial interface. The adjustable power supply module 34 can monitor the actual power supply voltage output to the microsystem 4 or the heating device 333 through the voltage monitoring channel, adjust the output voltage according to the feedback result, and report the voltage and current of each power supply to the MCU 32.

[0085] The adjustable power supply module 34 is an independent universal micro power supply module designed based on a PCB board, which can be electrically connected and installed with the microsystem aging test station 3 through standard connectors; the electrical connection provided by the standard connectors includes: the power input provided to the adjustable power supply module 34 by the aging test station 3, the multi-channel power supply output by the adjustable power supply module 34, the communication serial port between the MCU 32 and the adjustable power supply module 34, and other control IO.

[0086] The feedback resistor used to adjust the supply voltage value of each circuit of the adjustable power module 34 is installed on the microsystem aging test station 3 and connected to the feedback IO port of the adjustable power module 34 through a standard connector.

[0087] The aging program configuration memory 35 is connected to the aging test station 3 via a memory socket 38. The memory socket 38 is welded on the aging test station body 31, and the aging program configuration memory 35 can be plugged in and replaced at will.

[0088] The status display module 36 has an LCD screen. The MCU 32 can control the status display module 36 to scroll and display the working status of the workstation, including the voltage and current of each power supply, and the monitoring status reported by the RF digital mixed signal microsystem 4 to be tested.

[0089] The RF signal transceiver circuit 42 has 4 RF transmission channels and 4 RF receiving channels. Each RF channel is connected to the aging test station 3 through an aging test fixture, and each RF transmission channel on the aging test station 3 is connected to an RF receiving channel through a capacitor to complete the RF signal transmission and reception self-loop.

[0090] The programmable information processing circuit 41 has several groups of high-speed IO interfaces 411, each group of high-speed IO interfaces 411 is connected to the aging test station 3 through an aging test fixture, and the output port of each group of high-speed IO interfaces 411 on the aging test station 3 is connected to the input port of the same group through a capacitor to complete the self-loop of transmission and reception of the high-speed IO interface 411.

[0091] The programmable information processing circuit 41 has several general IO412, each of which is connected to the aging test station 3 through an aging test fixture, and a pull-up resistor and a pull-down resistor are respectively connected to each general IO412 at the aging test station 3; one end of the pull-up resistor is connected to the general IO412, and the other end is connected to the power supply; one end of the pull-down resistor is connected to the general IO412, and the other end is connected to the ground.

[0092] The programmable information processing circuit 41 in the microsystem 4 detects the operating status of its own programmable logic and the high-speed IO transceiver status. It also detects the transceiver status of the RF signal transceiver circuit 42 and the read and write status of the dynamic storage unit 43 and the static storage unit 44, and outputs the status identification signal of each part through an output port respectively. Each output port is independently connected to an LED 37 on the aging test station 3 through an aging test fixture; when the aging of each part works normally, the output port outputs a high level and lights up the corresponding LED 37; when the aging work is abnormal, the output port outputs a low level and the corresponding LED 37 is not lit.

[0093] The status data reported by the microsystem 4 includes the unique identification code ID of the microsystem, the junction temperature of the microsystem 4, the aging power mode status of each chip, the RF transceiver data clock lock indication, the RF signal transceiver circuit 42 local oscillator lock indication, the programmable information processing circuit 41 self-test status and error count, the high-speed IO interface 411 self-test status and error count, the dynamic storage unit 43 read and write self-test status and error count and the static storage unit 44 read and write self-test status and error count, etc.

[0094] When MCU 32 receives the aging start instruction and control temperature parameters issued by the aging control processor 1, it controls the adjustable power supply module 34 to supply power to the RF digital mixed signal microsystem 4 and the heating device 333 to be tested; at the same time, it compares the shell temperature T of the microsystem 4 reported by the temperature detection device 334. C and the junction temperature T reported autonomously by the microsystem 4 J , when T C and T J When the absolute value of the difference does not exceed 5℃, take T C and T J The average value is taken as the temperature detection result; when the temperature detection result is lower than the required control temperature, the heating device 333 is powered on, and the fan of the heat dissipation device 332 is turned off or the speed is reduced; when the temperature detection result is higher than the required control temperature, the heating device 333 is powered on or the fan speed of the heat dissipation device 332 is increased. C and T J When the absolute value of the difference is greater than 5°C, the adjustable power module 34 of this station is controlled to stop the power supply of the microsystem 4 and report the error alarm status information to the aging control processor 1.

[0095] The data reported by each aging test station 3 received by the aging control processor 1 include: the voltage and current of each supply line of the adjustable power supply module 34, the status data reported by the microsystem 4, the shell temperature T C 、Microsystem 4 junction temperature T J and MCU 32 status data; the aging control processor 1 calculates the total power consumption of the microsystem 4 according to the reported power supply voltage and current of each circuit; when the total power consumption of the microsystem 4, the voltage or current of each circuit, and the shell temperature T of the microsystem 4 of a certain aging test station 3 are C 、Microsystem 4 junction temperature T J When any data exceeds the maximum value preset by the user, the MCU 32 of the workstation is notified to power off, and the fault data is recorded to indicate the cause of the fault.

[0096] The microsystem 4 integrates M chips, each of which has its own junction temperature, which are T J1 、T J2 、T J3 and T JMThe junction temperature of each chip is different. The programmable information processing circuit 41 collects the junction temperature of each chip through the internal communication of the microsystem 4 and reports it to the MCU 32 and the aging control processor 1. When the MCU 32 controls the temperature, the highest junction temperature of each chip is taken as the junction temperature T of the microsystem 4. J , and control the temperature as above.

[0097] The aging method comprises the following steps:

[0098] First, the external power supply is turned on to supply power to the microsystem aging device, and the aging control processor 1 on the microsystem aging device starts the initial program to detect the working status of the device, and after confirming that the working status is normal, it notifies the host computer.

[0099] Secondly, the user sets the preset working state requirements of each microsystem burn-in test station 3 through the host computer software, including parameters such as whether to start, burn-in temperature control temperature, maximum power consumption allowed, maximum current of each power supply, etc., and sends instructions to the burn-in control processor 1 at one time;

[0100] After receiving the instruction, the burn-in control processor 1 notifies the MCU 32 of the corresponding burn-in test station 3 to start burn-in according to the instruction, and sets the configurable clock generator to provide a reference clock for the corresponding station;

[0101] After receiving the start-up request, the MCU 32 of each aging test station 3 controls the adjustable power supply module 34 to supply power to the RF digital mixed signal microsystem 4 to be tested, and starts the microsystem 4 to work;

[0102] When the radio frequency digital mixed signal microsystem 4 to be tested is started, the pre-configured aging program is read from the aging program configuration memory 35 to start dynamic aging; during the aging process, the programmable information processing circuit 41 continuously detects the operation correctness of the internal programmable information processing circuit (41) according to the designed processing program and records the operation status; a 1MHz square wave signal is output from each general IO412 port; a group of designed incremental data frames are continuously output from each group of high-speed IO ports 411, and after passing through the coupling capacitor on the PCB board of the aging test station 3, they are looped back to the input end of the group of high-speed IO ports 411, and the programmable information processing circuit 41 Verify the correctness of the data frame and monitor the working status of the high-speed IO port 411; the programmable information processing circuit 41 controls the RF signal transceiver circuit 42 to complete the initialization configuration, detects its VCO lock status, and after confirming normal operation, sends the specified modulation signal from each RF transmitting port, passes through the coupling capacitor on the PCB board of the aging test station 3, and then loops back to the corresponding RF receiving port. The programmable information processing circuit 41 demodulates the received data and monitors the working status of the RF transceiver circuit; the programmable information processing circuit 41 periodically writes a set of preset data into the dynamic storage unit 43 and the static storage unit 44 in turn, and then reads back to compare the data correctness.

[0103] Since the erase and write life of the static storage unit 44 is relatively low, only on the order of 100,000 times, and the duration of dynamic aging is relatively long, at more than 160 hours, a similar steady-state life test time is required to reach more than 1,000 hours. Therefore, during each dynamic aging process, the static storage unit 44 only writes data once when it is initially powered on, and continuously reads back the data during subsequent work to compare the data correctness; while the dynamic storage unit 43 can write new data at regular intervals each time, and then read back to confirm its correctness. In addition, the read and write rate of the static storage unit 44 is relatively slow, and it takes a long time, so the read and write frequency during the aging process can be significantly lower than that of other modules. For example, during the aging process, it is necessary to continuously run the status monitoring of the programmable information processing circuit 41, the general IO412 port, the high-speed IO port and the radio frequency signal transceiver circuit 42, perform a read and write check on the dynamic storage unit 43 every 5 to 10 seconds, and perform a data read-out check on the static storage unit 44 every 30 seconds or so.

[0104] The RF digital mixed signal microsystem 4 to be tested outputs the detected programmable logic operation status, high-speed IO transceiver status, transceiver status of the RF signal transceiver circuit 42, and read / write status of the dynamic storage unit 43 and the static storage unit 44 to the LED 37 on the PCB of the aging test station 3 using an output port respectively; when the aging of each part works normally, the corresponding LED 37 is lit, so that the aging status of the microsystem 4 can be quickly judged manually.

[0105] On the other hand, the RF digital mixed signal microsystem 4 to be tested packages the self-test status information, the unique identification code ID of the microsystem 4 itself, the junction temperature of the microsystem 4, and the aging power mode status of each chip into a data frame, and sends it to the MCU 32 through the serial interface at a fixed time. The unique identification code ID of the microsystem is the factory number of each microsystem 4, which is used as the identity code of the microsystem 4 to identify and match its aging test data in subsequent data processing; the junction temperature of the microsystem 4 can be used to determine the internal working temperature of the microsystem 4 to ensure that the product is not damaged; the self-test status information reported by the microsystem 4 may include the RF transceiver data clock lock indication, the RF signal transceiver circuit 42 local oscillator lock indication, the programmable information processing circuit 41 self-test status and error count, the high-speed IO interface 411 self-test status and error count, the dynamic storage unit 43 read and write self-test status and error count, and the static storage unit 44 read and write self-test status and error count, etc., which are used to determine whether the aging of the microsystem 4 is normal.

[0106] In addition to collecting the data information reported by the RF digital mixed signal microsystem 4 to be tested, the MCU 32 also periodically reads all the supply voltage and current data of the adjustable power module 34 and the shell temperature T of the microsystem 4 tested by the temperature detection device 334. C , and then packaged and sent to the aging control processor 1.

[0107] The temperature detection device 334 has multiple detection points, which contact different areas on the upper surface of the microsystem 4 respectively, and are used to detect the temperature of each important chip integrated in the microsystem 4. The monitoring temperature of chip No. 1 is T C1 , the monitoring temperature of chip M is T CM The corresponding temperatures are reported to the MCU 32 respectively, and can be used to accurately control the aging temperature of the microsystem 4.

[0108] The programmable information processing circuit 41 is usually defined as chip No. 1. C1 Or the highest temperature among the temperature detection points is taken as the shell temperature T of the whole microsystem C .

[0109] When controlling the heating and cooling of the microsystem 4 as a whole, the MCU 32 first receives the shell temperature T of the microsystem 4 measured by the temperature detection device 334. C and the junction temperature T of the microsystem 4 reported by the microsystem 4 itself J , because of the junction-to-shell thermal resistance, there is a certain temperature difference between the two, and the measurement accuracy of the temperature detection device 334 and the on-chip temperature sensor inside the microsystem 4 is not high, usually with an error of ±2 to 3°C; therefore, in actual control, when T C and T J When the absolute value of the difference does not exceed 10℃, take T C and T JThe average value of is taken as the temperature detection result, and the temperature detection result is compared with the preset dynamic aging temperature to determine whether the temperature should be raised or lowered; when T C and T J When the absolute value of the difference is greater than 10° C., the temperature detection may be abnormal, and the MCU 32 should control the adjustable power module 34 of this station to stop supplying power and report the error alarm status information.

[0110] For the temperature difference control among multiple chips in the microsystem 4, the method adopted is as follows:

[0111] Each chip in the microsystem 4 meets the necessary conditions for aging, and the aging program of each chip has high, medium and low power modes; at the initial operation, each chip in the microsystem 4 is in the medium power mode; when the aging starts, the shell temperature of the entire microsystem 4 is T C When the temperature rises to 90% of the preset temperature, the MCU 32 starts to notify the programmable information processing circuit 41 to control the burn-in power mode of other chips.

[0112] If within the set time t, the case temperature of chip N is T CN Always greater than T C1 105%, then the MCU 32 needs to notify the programmable information processing circuit 41 to reduce the aging power of chip N; when the shell temperature T of chip N CN Always less than T C1 When the temperature of the chip is greater than 95%, the MCU 32 notifies the programmable information processing circuit 41 to increase the aging power of the chip N. C1 When the shell temperature of all other chips is less than T C1 When the power consumption is 95%, the MCU 32 notifies the programmable information processing circuit 41 to reduce its own aging power.

[0113] In addition, if the aging temperature requirements of different chips in the microsystem 4 are different, for example, the aging setting temperature of the programmable information processing circuit 41 is T1, and the setting temperature of the radio frequency signal transceiver circuit 42 is T2 (T1>T2), then when T C2 Greater than T C1 -(T1-T2) is 105%, the aging power of the RF signal transceiver circuit 42 should be reduced. C2 Less than T C1 -95% of (T1-T2), the aging power of the radio frequency signal transceiver circuit 42 should be increased.

[0114] When the aging is finished, the cooling phase begins, and the MCU 32 notifies the programmable information processing circuit 41 to put all chips into a low-power mode until the cooling is completed.

[0115] The operating states of the heating device 333 of the microsystem aging test fixture 33 are divided into full-power operation, half-power operation and off, and the fan of the heat dissipation device 332 can adjust the speed, and the above adjustments can be controlled by the MCU 32. During the aging temperature control process by MCU 32, at the initial operation, MCU 32 controls the heating device 333 to run at full power and the cooling fan is turned off until the temperature detection result of the microsystem 4 is only 5°C lower than the preset aging temperature, at which time MCU 32 controls the cooling fan to turn on and run at a lower speed; when the temperature detection result of the microsystem 4 is 1°C higher than the preset aging temperature, MCU 32 controls the heating device 333 to run at half power and increases the cooling fan speed over time; if the temperature detection result of the microsystem 4 is 3°C higher than the preset aging temperature, MCU 32 controls the heating device 333 to turn off and the cooling fan to run at the highest speed; when the temperature detection result of the microsystem 4 is again lower than the preset aging temperature by 1°C, MCU 32 controls the heating device 333 to run at half power and reduces the cooling fan speed over time; if the temperature detection result of the microsystem 4 is 3°C lower than the preset aging temperature, MCU 32 controls the heating device 333 to run at full power.

[0116] The MCU 32 outputs the aging working status, temperature, voltage and current of each power supply of the microsystem 4 to the status display module 36, which is scrolled and displayed on the LCD screen for easy manual monitoring.

[0117] The aging control processor 1 receives the voltage and current of each power supply reported by the MCU 32, the status data reported by the microsystem 4, and the shell temperature T of the microsystem 4. C 、Microsystem 4 junction temperature T J After the MCU 32 status data is obtained, the total power consumption of the microsystem 4 is calculated according to the reported power supply voltage and current of each circuit; when the total power consumption of the microsystem 4, the voltage or current of each circuit, and the shell temperature T C 、Microsystem 4 junction temperature T J When any data exceeds the maximum value preset by the user, the MCU 32 of the workstation is notified to power off, and the fault data is recorded to indicate the cause of the fault; all aging data are uploaded to the host computer for storage to facilitate data backtracking and comparison.

[0118] The aging program configuration memory 35 is connected to the aging test station 3 through a memory socket 38. The memory socket 38 is welded on the aging test station 3, and the aging program configuration memory 35 can be plugged in and replaced at will. Therefore, there is no need to burn the program configuration memory 35 at each station. You only need to take out the memory, batch burn it on a special burning board, and then install it back on the aging test station 3 for use.

[0119] The adjustable power supply module 34 is designed as an independent universal micro power supply module based on PCB board design, which can be electrically connected and installed with the microsystem aging test station 3 through standard connectors; the adjustable power supply module 34 is designed to include multiple power supplies, and the voltage value of each power supply can be adjusted by the resistance value of an external feedback resistor, which is installed on the microsystem aging test station 3 and connected to the feedback IO port of the adjustable power supply module 34 through a standard connector; therefore, although there are many types of power supply voltages required on the aging test station 3, and each adjustable power supply module 34 needs to output a different voltage, a unified adjustable power supply module 34 can be used for installation in this design, and its output voltage is determined by the corresponding port of the aging test station 3.

[0120] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A room temperature dynamic aging device for a radio frequency digital mixed signal microsystem, characterized in that: It comprises an aging control processor (1), a programmable clock generator (2) electrically connected to the aging control processor (1), and a microsystem aging test station (3); The radio frequency digital mixed signal microsystem (4) to be tested is connected to the microsystem aging test station (3), the number of the microsystem aging test stations (3) is one or more, and each of the microsystem aging test stations (3) can independently perform aging test and temperature control on one radio frequency digital mixed signal microsystem (4) to be tested; The microsystem aging test station (3) comprises a test station body (31), an MCU (32) and a microsystem aging test fixture (33) both connected to the test station body (31), an adjustable power supply module (34) both connected to the MCU (32) and the microsystem aging test fixture (33), and an aging program configuration memory (35) connected to the radio frequency digital mixed signal microsystem (4) to be tested; The burn-in control processor (1) communicates with the host computer via a Gigabit Ethernet port, receives burn-in control instructions from the host computer, and reports data and status information of all the microsystem burn-in test stations (3) to the host computer; the burn-in control processor (1) completes data communication with the MCU (32) via a serial interface, sends burn-in control instructions to the MCU (32), and receives data and status information reported by the MCU (32); the burn-in control processor (1) controls the programmable clock generator (2) via a serial interface to generate at least two reference clocks of a specified frequency and provide them to each of the microsystem burn-in test stations (3) for use; The microsystem aging test fixture (33) comprises a test socket (331) connected to the radio frequency digital mixed signal microsystem (4) to be tested, a heat sink (332) connected to the top of the test socket (331), a heating device (333) connected inside the heat sink (332), and a temperature detection device (334) connected to the bottom of the heat sink (332); the test socket (331) provides a removable electrical connection between the radio frequency digital mixed signal microsystem (4) to be tested and the PCB board of the test station body (31); the heat sink (332) is in direct contact with the upper surface of the radio frequency digital mixed signal microsystem (4) to be tested, assisting in heat dissipation and temperature control; when the heating device (333) is powered on, it only heats the heat sink (332) and the radio frequency digital mixed signal microsystem (4) to be tested; the temperature detection device (334) is in direct contact with the upper surface of the radio frequency digital mixed signal microsystem (4) to be tested, tests the shell temperature and reports it to the MCU (32).

2. The room temperature dynamic aging device of a radio frequency digital mixed signal microsystem according to claim 1, characterized in that: The radio frequency digital mixed signal microsystem to be tested (4) comprises a programmable information processing circuit (41), a radio frequency signal transceiver circuit (42), a dynamic storage unit (43) and a static storage unit (44); The programmable information processing circuit (41) configures and controls the dynamic aging work of the radio frequency signal transceiver circuit (42), the dynamic storage unit (43) and the static storage unit (44), and detects the aging state and reports the state data to the MCU (32); The radio frequency digital mixed signal microsystem (4) to be tested has M chips integrated therein, and the temperature detection device (334) includes at least two detection points, which respectively contact different areas on the upper surface of the radio frequency digital mixed signal microsystem (4) to be tested, each detection point corresponds to the central position of a chip inside the radio frequency digital mixed signal microsystem (4) to be tested and detects the chip temperature and reports it to the MCU (32) respectively, wherein the monitored temperature of chip No. 1 is T C1 ,…, the monitoring temperature of chip M is T CM , T C1 ,…,T CM A shell temperature for controlling the aging temperature of the radio frequency digital mixed signal microsystem (4) to be tested; The junction temperatures of the M chips of the radio frequency digital mixed signal microsystem (4) to be tested are T J1 、T J2 、T J3 and T JM The programmable information processing circuit (41) collects the junction temperature of each chip through the internal communication of the radio frequency digital mixed signal microsystem (4) to be tested and uniformly reports it to the MCU (32) and the aging control processor (1); when controlling the temperature, the MCU (32) takes the highest junction temperature of each chip as the junction temperature T of the radio frequency digital mixed signal microsystem (4) to be tested. J and control the temperature; The burn-in program of each of the RF digital mixed signal microsystem (4) chips to be tested has a high-power mode state, a medium-power mode state and a low-power mode state; when the shell temperature difference of multiple chips exceeds a threshold value, the MCU (32) notifies the programmable information processing circuit (41) through a state control interface to increase or decrease the power of the chip by adjusting the communication rate, clock frequency and resource amount to perform local temperature increase or decrease; During initial operation, each chip in the radio frequency digital mixed signal microsystem (4) to be tested is in the medium power mode, and the programmable information processing circuit (41) serves as chip No. 1 to control the aging power mode of the chips other than chip No. 1; When chip N monitors the temperature T CN Greater than T C1 When the temperature T of chip N reaches 105%, the MCU (32) notifies the programmable information processing circuit (41) to reduce the aging power of chip N; when the temperature T of chip N reaches 105%, the MCU (32) notifies the programmable information processing circuit (41) to reduce the aging power of chip N; CN Less than T C1 When the temperature of all chips except the chip No. 1 is greater than T C1 When the temperature of all chips except the chip No. 1 is less than T C1 When the power consumption of the MCU (32) reaches 95%, the MCU (32) notifies the programmable information processing circuit (41) to reduce its own aging power.

3. The room temperature dynamic aging device of a radio frequency digital mixed signal microsystem according to claim 2, characterized in that: The radio frequency signal transceiver circuit (42) includes at least two radio frequency transmission channels and at least two radio frequency receiving channels, each radio frequency channel is connected to the micro system aging test station (3) through the micro system aging test fixture (33), and the micro system aging test station (3) is connected to a radio frequency receiving channel through a capacitor to perform a self-loop transmission and reception of radio frequency signals; The programmable information processing circuit (41) comprises at least two groups of high-speed IO interfaces (411), each group of the high-speed IO interfaces (411) is connected to the microsystem aging test station (3) through the microsystem aging test fixture (33), and each group of high-speed IO interfaces (411) output ports are connected to the input ports of the same group through a capacitor to perform self-loop transmission and reception of the high-speed IO interfaces (411); The programmable information processing circuit (41) comprises at least two general IO ports (412), each of the general IO ports (412) is connected to the microsystem aging test station (3) through the microsystem aging test fixture (33), and each of the general IO ports (412) is connected to a pull-up resistor and a pull-down resistor on the microsystem aging test station (3); one end of the pull-up resistor is connected to the general IO port (412) and the other end is connected to a power supply; one end of the pull-down resistor is connected to the general IO port (412) and the other end is grounded; The status data reported by the radio frequency digital mixed signal microsystem (4) to be tested includes the unique identification code ID of the radio frequency digital mixed signal microsystem (4) to be tested, the junction temperature of the radio frequency digital mixed signal microsystem (4) to be tested, the aging power mode status of each chip, the radio frequency receiving and transmitting data clock lock indication, the radio frequency signal receiving and transmitting circuit (42) local oscillator lock indication, the programmable information processing circuit (41) self-test status and error count, the high-speed IO interface (411) self-test status and error count, the dynamic memory read and write self-test status and error count, and the static memory read and write self-test status and error count; The burn-in control processor (1) receives data reported by each of the microsystem burn-in test stations (3), including: each supply voltage and current of the adjustable power supply module (34), status data reported by the radio frequency digital mixed signal microsystem to be tested (4), and shell temperature T of the radio frequency digital mixed signal microsystem to be tested (4). C , the junction temperature T of the radio frequency digital mixed signal microsystem (4) to be tested J and the state data of the MCU (32); the burn-in control processor (1) calculates the total power consumption of the radio frequency digital mixed signal microsystem (4) to be tested according to the reported power supply voltage and current of each channel; when the total power consumption, each channel voltage or current, and the shell temperature T of the radio frequency digital mixed signal microsystem (4) to be tested of a microsystem burn-in test station (3) are C , the junction temperature T of the radio frequency digital mixed signal microsystem (4) to be tested J When any data exceeds the maximum value preset by the user, the MCU (32) at the workstation is notified to power off, and the fault data is recorded to indicate the cause of the fault.

4. The room temperature dynamic aging device of a radio frequency digital mixed signal microsystem according to claim 1, characterized in that: The heat dissipation device (332) comprises a metal heat sink (3321) located on the side of the radio frequency digital mixed signal microsystem (4) to be tested and a heat dissipation fan (3322) with adjustable speed in direct contact with the upper surface of the radio frequency digital mixed signal microsystem (4) to be tested; When the MCU (32) receives the aging start instruction and the control temperature parameter sent by the aging control processor (1), it controls the adjustable power supply module (34) to supply power to the RF digital mixed signal microsystem (4) to be tested and the heating device (333); at the same time, it compares the shell temperature T of the RF digital mixed signal microsystem (4) to be tested reported by the temperature detection device (334). C and the junction temperature T reported autonomously by the radio frequency digital mixed signal microsystem (4) to be tested J ; When T C and T J When the absolute value of the difference does not exceed 5℃, take T C and T J The average value is taken as the temperature detection result; when T C and T J When the absolute value of the difference is greater than 5°C, the adjustable power supply module (34) of the microsystem aging test station (3) is controlled to stop supplying power to the radio frequency digital mixed signal microsystem (4) to be tested, and report error alarm status information to the aging control processor (1); When the shell temperature T C When the temperature is lower than the required control temperature, the power supply of the heating device (333) is maintained, and the fan of the heat dissipation device (332) is turned off or the speed is reduced; When the shell temperature T C When the temperature is higher than the required control temperature, the power supply of the heating device (333) is disconnected or the fan speed of the heat dissipation device (332) is increased; Each of the adjustable power supply modules (34) includes at least two power supplies, and the voltage value of each power supply can be adjusted by an external feedback resistor; the adjustable power supply modules (34) include a voltage monitoring channel and a serial interface, the MCU (32) controls the adjustable power supply module (34) to turn on or off the power supply output through the serial interface, and the adjustable power supply module (34) monitors the actual power supply voltage output to the RF digital mixed signal microsystem (4) to be tested or the heating device (333) through the voltage monitoring channel, adjusts the output voltage according to the feedback result, and reports the voltage and current of each power supply to the MCU (32); The adjustable power module (34) is a universal micro power module independently designed based on a PCB board, and can be electrically connected and installed with the test station body (31) via a standard connector; The electrical connection provided by the standard connector includes: the power input provided by the microsystem aging test station (3) to the adjustable power module (34), the multi-channel power supply output by the adjustable power module (34), the communication serial port and control IO between the MCU (32) and the adjustable power module (34); A feedback resistor for adjusting the voltage value of each supply line of the adjustable power module (34) is installed on the test station body (31), and the feedback resistor is connected to the feedback IO port of the adjustable power module (34) through a standard connector; The microsystem aging test station (3) further comprises a status display module (36) connected to the MCU (32), an LED (37) connected to the RF digital mixed signal microsystem (4) to be tested, and a memory socket (38) connecting the aging program configuration memory (35) to the test station body (31); The state display module (36) is provided with an LCD screen, and the MCU (32) (32) can control the state display module (36) to scroll and display the working state of the microsystem aging test station (3), wherein the working state includes the voltage and current of each power supply and the monitoring state reported by the RF digital mixed signal to be tested and the RF digital mixed signal microsystem to be tested (4); The programmable information processing circuit (41) of the radio frequency digital mixed signal microsystem (4) to be tested can detect the operating state of its own programmable logic and the high-speed IO transceiver state, and also detect the transceiver state of the radio frequency signal transceiver circuit (42) of the radio frequency digital mixed signal microsystem (4) to be tested and the read and write states of the dynamic storage unit (43) and the static storage unit (44), and output the state identification signal of each part through an output port respectively, and each output port is independently connected to an LED (37) on the micro system aging test station (3) through the micro system aging test fixture (33); when the aging of each part works normally, the output port outputs a high level and lights up the corresponding LED (37); when the aging work is abnormal, the output port outputs a low level and the corresponding LED (37) does not light up; The memory socket (38) is welded on the test station body (31) so that the burn-in program configuration memory (35) can be plugged in and out and replaced at will.

5. The aging method of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to any one of claims 1 to 4, characterized in that: The following steps are involved: S1, turning on the external power supply to power the normal temperature dynamic aging device, the aging control processor (1) starts the initial program, detects the working state of the device, and after confirming that the working state is normal, notifies the host computer; S2, the user sets the preset working state requirements of each microsystem aging test station (3) through the host computer software, including whether to start, aging temperature control temperature, maximum power consumption allowed, and maximum current of each power supply, and sends instructions to the aging control processor (1) at one time; S3, after receiving the instruction, the burn-in control processor (1) notifies the MCU (32) corresponding to the microsystem burn-in test station (3) to start burn-in according to the instruction requirements, and sets the configurable clock generator (2) to provide a reference clock for the microsystem burn-in test station (3); S4, after receiving the start-up request, each MCU (32) controls the adjustable power supply module (34) to supply power to the radio frequency digital mixed signal microsystem (4) to be tested, and starts the operation of the radio frequency digital mixed signal microsystem (4) to be tested; S5, when the radio frequency digital mixed signal microsystem (4) to be tested is started, a pre-configured burn-in program is read from the burn-in program configuration memory (35) to start dynamic burn-in; during the burn-in process, the programmable information processing circuit (41) of the radio frequency digital mixed signal microsystem (4) to be tested continuously detects the correctness of the operation of the internal programmable information processing circuit (41) according to the burn-in program and records the operation status; The programmable information processing circuit (41) outputs a 1 MHz square wave signal from each general IO port (412), and continuously outputs a set of designed incremental data frames from each set of high-speed IO interfaces (411), and after passing through the coupling capacitor on the PCB board of the test station body (31), the data frames are looped back to the input end of the high-speed IO ports of the current set. The programmable information processing circuit (41) verifies the correctness of the data frames and monitors the working status of the high-speed IO interfaces (411); The programmable information processing circuit (41) controls the radio frequency signal transceiver circuit (42) of the radio frequency digital mixed signal microsystem (4) to be tested to complete initialization configuration, detects the VCO lock state, and after confirming normal operation, sends a specified modulation signal from each radio frequency transmission port respectively, passes through the coupling capacitor on the PCB board of the test station body (31), and then loops back to the corresponding radio frequency receiving port. The programmable information processing circuit (41) demodulates the received data and monitors the working state of the radio frequency transceiver circuit; the programmable information processing circuit (41) regularly writes a set of preset data into the dynamic storage unit (43) and the static storage unit (44) of the radio frequency digital mixed signal microsystem (4) to be tested, and then reads back to compare the correctness of the data, thereby completing an aging method for a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem.

6. The aging method of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to claim 5, characterized in that: In step S5, during each dynamic aging process, the static storage unit (44) only writes data once when it is initially powered on, and reads back the data continuously during subsequent operations to compare the data correctness; the dynamic storage unit (43) writes new data each time at a fixed time, and then reads back to confirm its correctness; During the aging process, the status monitoring of the programmable information processing circuit (41), the general IO port (412), the high-speed IO interface (411) and the radio frequency signal transceiver circuit (42) is continuously performed, the dynamic storage unit (43) is subjected to a read-write check once every 5 to 10 seconds, and the static storage unit (44) is subjected to a data read-out check once every 30 seconds.

7. The aging method of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to claim 5, characterized in that: In step S5, the radio frequency digital mixed signal microsystem (4) to be tested outputs the detected operating status of the programmable information processing circuit (41), the high-speed IO transceiver status, the transceiver status of the radio frequency signal transceiver circuit (42), the read / write status of the dynamic storage unit (43) and the read / write status of the static storage unit (44) to an LED (37) on the PCB of the test station body (31) through an output port respectively; when the aging of each part works normally, the corresponding LED (37) is lit to quickly determine the aging status of the microsystem.

8. The aging method of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to claim 5, characterized in that: In step S5, the radio frequency digital mixed signal microsystem (4) to be tested packages the self-test status information, the unique identification code ID, the microsystem junction temperature and the burn-in power mode status of each chip into a data frame, sends it to the MCU (32) through the serial interface at a fixed time, and determines whether the burn-in operation of the radio frequency digital mixed signal microsystem (4) to be tested is normal; The microsystem unique identification code ID is the factory serial number of each of the radio frequency digital mixed signal microsystems (4) to be tested, and serves as the identification code of the radio frequency digital mixed signal microsystem (4) to be tested, and is used to identify and match its aging test data in subsequent data processing; Determining the internal operating temperature of the radio frequency digital mixed signal micro system (4) to be tested by the junction temperature of the radio frequency digital mixed signal micro system (4) to be tested to ensure that the product is not damaged; The self-check status information includes a radio frequency data transceiver clock lock indication, a radio frequency signal transceiver circuit (42) local oscillator lock indication, a programmable information processing circuit (41) self-check status and error count, a high-speed IO interface (411) self-check status and error count, a dynamic storage unit (43) read / write self-check status and error count, and a static storage unit (44) read / write self-check status and error count; The MCU (32) periodically reads all the power supply voltage and current data of the adjustable power supply module (34) and the microsystem shell temperature T tested by the temperature detection device (334). C , after being uniformly packaged, they are sent to the aging control processor (1); The temperature detection device (334) is provided with a plurality of detection points, which respectively contact different areas on the upper surface of the microsystem to detect the temperature of each important chip integrated inside the microsystem. The monitoring temperature of chip No. 1 is T C1 , the monitoring temperature of chip M is T CM The corresponding temperatures are reported to the MCU (32) to control the microsystem aging temperature.

9. The aging method of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to claim 5, characterized in that: When temperature difference control is performed between multiple chips in the radio frequency digital mixed signal microsystem (4) to be tested, when the aging temperature requirements of different chips in the radio frequency digital mixed signal microsystem (4) to be tested are different, the aging setting temperature of chip x is T x , the set temperature of chip y is T y , and T x >T y , when T Cx Greater than T Cx -(T x -T y ) is 105%, the aging power of chip y is reduced. When T Cy Less than T Cx -(T x -T y ) is 95%, the aging power of chip y is increased; When the aging is finished, the cooling phase begins, and the MCU (32) notifies the programmable information processing circuit (41) to put all chips into a low-power mode until the cooling is completed.

10. The aging method of a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to claim 5, characterized in that: The operating states of the heating device (333) under the control of the MCU (32) include full-power operation, half-power operation and shutdown, and the adjustable speed cooling fan (3322) of the cooling device (332) can adjust the speed under the control of the MCU (32); During initial operation, the MCU (32) controls the heating device (333) to operate at full power, and the cooling fan is turned off, until the temperature detection result of the radio frequency digital mixed signal microsystem (4) to be tested is only 5°C lower than the preset aging temperature, the MCU (32) controls the adjustable speed cooling fan (3322) to turn on and operate at a low speed; when the temperature detection result of the radio frequency digital mixed signal microsystem (4) to be tested is 1°C higher than the preset aging temperature, the MCU (32) controls the heating device (333) to operate at half power, and increases the speed of the adjustable speed cooling fan (3322) over time; when the temperature detection result of the radio frequency digital mixed signal microsystem (4) to be tested is 1°C higher than the preset aging temperature, the MCU (32) controls the heating device (333) to operate at half power, and increases the speed of the adjustable speed cooling fan (3322) over time; ) is higher than the preset aging temperature by 3°C, the MCU (32) controls the heating device (333) to be turned off, and the adjustable speed cooling fan (3322) to operate at the highest speed; when the temperature detection result of the RF digital mixed signal microsystem (4) to be tested is lower than the preset aging temperature by 1°C again, the MCU (32) controls the heating device (333) to operate at half power, and reduces the speed of the adjustable speed cooling fan (3322) over time; when the temperature detection result of the RF digital mixed signal microsystem (4) to be tested is lower than the preset aging temperature by 3°C, the MCU (32) controls the heating device (333) to operate at full power.

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