A normal-temperature dynamic burn-in device and method for a radio frequency digital mixed signal microsystem

Abstract

The application provides a normal-temperature dynamic burn-in device and method for a radio frequency digital mixed signal micro system, which comprises a burn-in control processor, a programmable clock generator electrically connected with the burn-in control processor, and a micro system burn-in test station; the radio frequency digital mixed signal micro system to be tested is connected on the micro system burn-in test station, the number of the micro system burn-in test stations is one or more than one, and each micro system burn-in test station can independently perform burn-in test and temperature control on one radio frequency digital mixed signal micro system to be tested. The application achieves the precise temperature control requirement of high consistency among the multiple chips in the micro system by reasonably designing the temperature control, state monitoring, chip temperature detection and control system and method of the micro system burn-in test station and the burn-in device, thereby realizing the micro system burn-in device without a temperature box; the burn-in method is easy to cascade and expand, and can be applied to the burn-in of micro systems in different batch scales, and is convenient for automatic monitoring and manual inspection.

Description

Technical Field

[0001] This invention relates to the field of measurement and testing technology, specifically to a room-temperature dynamic aging device and method for a radio frequency digital mixed signal microsystem. Background Technology

[0002] Aging tests are a challenging and crucial part of the integrated circuit reliability screening process, especially for complex, high-power, and large-scale interface I / O products such as RF digital mixed-signal microsystems. Customized design of aging devices is a core design element of screening tests for such microsystems.

[0003] Radio frequency digital mixed-signal microsystems (RSMS) are typically characterized by high power consumption, complex power supply, and complex interface I / O. A single microsystem can consume tens of watts of power and often has more than five supply voltages, especially with high demand for low-voltage, high-current applications. A single microsystem may require more than 10A of 1.0V power supply, and this type of low-voltage power supply has higher requirements for voltage accuracy, even requiring the voltage value to be within ±3%. Conventional aging test equipment usually uses a temperature chamber to provide a high-temperature environment. Considering the operating temperature of up to 125°C, it is necessary to minimize the number of high-power or short-life components on the aging test equipment. Therefore, external test equipment or modules are usually used to provide power and clock for the components on the aging test equipment. However, conventional integrated circuit test equipment is difficult to provide complex power supplies, especially unable to support batch power supply of low-voltage, high-current applications. On the other hand, this type of low-voltage, high-current power supply requires very low power transmission impedance, which is not conducive to external cable power supply. It is more suitable to integrate power supply modules on the PCB board to reduce the length and resistance of the power supply lines.

[0004] Therefore, such complex microsystems typically require the integration of complex power supplies, clocks, and even auxiliary test units into aging test equipment. Among these, the numerous components (such as power supplies) are not suitable for prolonged operation at an ambient temperature of 125°C, as they are prone to damage and have high repair costs and difficulties. At the same time, these complex microsystems themselves have high power consumption and cost, requiring more precise independent temperature control to avoid product damage. In addition, RF digital mixed-signal microsystems involve a large number of various RF transceiver signals and high-speed or low-speed digital signals, usually exceeding several hundred, with complex cable connections, making them unsuitable for operation and testing inside a temperature chamber.

[0005] Furthermore, unlike monolithic integrated circuits, microsystems integrate multiple chips, each with different power consumption, package thermal resistance, and maximum allowable junction temperature. For example, when all chips need to reach 125°C, one chip may have already reached 125°C, while another chip may only reach 115°C, failing to achieve the required aging effect; or one chip may require an aging junction temperature of 125°C, while another chip may only be allowed to reach 110°C. In such cases, it is necessary to implement specific aging temperature control measures for each chip within the microsystem to achieve more precise aging temperature control, thus avoiding damage to the microsystem while achieving the desired aging effect.

[0006] Therefore, it is necessary to design a room-temperature dynamic aging device and method for radio frequency digital mixed signal microsystems to meet the actual working requirements of specific microsystems. This method can complete the aging test in a room-temperature environment without a temperature chamber, improve the consistency of aging temperature among multiple chips in the package, further simplify the test complexity, and facilitate large-scale cascading expansion. Summary of the Invention

[0007] This invention addresses the dynamic aging problem of large-scale complex microsystems by providing a room-temperature dynamic aging device and method for radio frequency digital mixed-signal microsystems. Through the rational design of the microsystem aging test station and the temperature control, status monitoring, chip temperature detection and control systems and methods of the aging device, the invention achieves the high-consistency and precise temperature control requirements among multiple chips within the microsystem, and realizes a microsystem aging device without a temperature chamber. In the entire aging device, only the microsystem to be aged operates at a high temperature, while other circuits and cables operate at room temperature, effectively improving the lifespan and convenience of the aging device. Furthermore, the invention employs a multi-level pluggable and replaceable design, reusing hardware modules as much as possible while customizing the microsystem aging device, effectively improving the design compatibility and maintainability of the aging device. In addition, the aging method adopted is easy to cascade and expand, applicable to microsystem aging at different batch sizes, and facilitates automated monitoring and manual inspection.

[0008] This invention provides a room temperature dynamic aging device for a radio frequency digital mixed signal microsystem, including an aging control processor, a programmable clock generator electrically connected to the aging control processor, and a microsystem aging test station;

[0009] The RF digital mixed signal microsystem under test is connected to the microsystem aging test station. There is one or more microsystem aging test stations. Each microsystem aging test station can independently perform aging tests and temperature control for one RF digital mixed signal microsystem under test.

[0010] The microsystem aging test station includes a test station body, an MCU and a microsystem aging test fixture connected to the test station body, an adjustable power supply module connected to the MCU and the microsystem aging test fixture, and an aging program configuration memory connected to the RF digital mixed signal microsystem under test.

[0011] The aging control processor communicates with the host computer via a gigabit Ethernet port, receives aging control commands from the host computer, and reports the data and status information of all microsystem aging test stations to the host computer; the aging control processor communicates with the MCU via a serial interface, sends aging control commands to the MCU, and receives the data and status information reported by the MCU; the aging control processor controls a programmable clock generator via a serial interface to generate at least two reference clocks of specified frequencies for use by each microsystem aging test station;

[0012] The microsystem aging test fixture includes a test socket that connects to the RF digital mixed-signal microsystem under test, a heat dissipation device connected to the top of the test socket, a heating device connected inside the heat dissipation device, and a temperature detection device connected to the bottom of the heat dissipation device. The test socket provides a removable electrical connection between the RF digital mixed-signal microsystem under test and the PCB board of the test station body. The heat dissipation device is in direct contact with the upper surface of the RF digital mixed-signal microsystem under test, assisting in heat dissipation and temperature control. When the heating device is powered on, it heats only the heat dissipation device and the RF digital mixed-signal microsystem under test. The temperature detection device is in direct contact with the upper surface of the RF digital mixed-signal microsystem under test and measures the case temperature and reports it to the MCU.

[0013] The ambient temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to the present invention, as a preferred embodiment, includes a programmable information processing circuit, a radio frequency signal transceiver circuit, a dynamic storage unit, and a static storage unit in the radio frequency digital mixed signal microsystem to be tested.

[0014] The programmable information processing circuit configures and controls the dynamic curing operation of the RF signal transceiver circuit, dynamic storage unit, and static storage unit, while detecting the curing status and reporting the status data to the MCU.

[0015] The RF-digital mixed-signal microsystem under test integrates M chips. The temperature detection device includes at least two detection points, each contacting a different area on the upper surface of the RF-digital mixed-signal microsystem under test. Each detection point corresponds to the center position of one chip within the RF-digital mixed-signal microsystem under test and detects the chip temperature, reporting the temperature to the MCU. Specifically, the temperature monitored for chip number 1 is T. C1 The temperature monitored by chip M is T. CM T C1 ... T CMThe case temperature is used to control the aging temperature of the RF digital mixed-signal microsystem under test;

[0016] The junction temperatures of the M chips in the RF digital mixed-signal microsystem under test are respectively T J1 T J2 T J3 And T JM The programmable information processing circuit collects the junction temperatures of each chip through the internal communication of the RF digital mixed-signal microsystem under test and reports them uniformly to the MCU and the aging control processor; when controlling the temperature, the MCU takes the highest junction temperature among the chips as the junction temperature T of the RF digital mixed-signal microsystem under test. J And control the temperature;

[0017] Each aging program for the RF digital mixed-signal microsystem chip under test has a high-power mode, a medium-power mode, and a low-power mode. When the case temperature difference of multiple chips exceeds the threshold, the MCU notifies the programmable information processing circuit through the status control interface to increase or decrease the chip power by adjusting the communication rate, clock frequency, and resource quantity to perform local heating or cooling.

[0018] During initial operation, each chip in the RF digital mixed signal microsystem under test is in medium power mode. The programmable information processing circuit acts as chip 1, controlling the aging power mode of the chips other than chip 1.

[0019] When chip N monitors temperature T CN Greater than T C1 When the temperature reaches 105%, the MCU instructs the programmable information processing circuit to reduce the aging power of chip N; when chip N monitors temperature T... CN Less than T C1 When the temperature reaches 95%, the MCU instructs the programmable information processing circuit to increase the aging power of chip N; when the monitored temperature of all chips except chip 1 is greater than T... C1 When the temperature reaches 105%, the MCU instructs the programmable information processing circuit to increase its own aging power; when the monitored temperature of all chips except chip 1 is less than T... C1 When the aging power reaches 95%, the MCU instructs the programmable information processing circuit to reduce its own aging power.

[0020] The ambient temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to the present invention, in a preferred embodiment, includes a radio frequency signal transceiver circuit comprising at least two radio frequency transmitting channels and at least two radio frequency receiving channels. Each radio frequency channel is connected to a microsystem aging test station via a microsystem aging test fixture. The microsystem aging test station is connected to a radio frequency receiving channel via a capacitor to perform a self-loop transmission and reception of radio frequency signals.

[0021] The programmable information processing circuit includes at least two sets of high-speed I / O interfaces. Each set of high-speed I / O interfaces is connected to the microsystem aging test station through a microsystem aging test fixture. The output port of each set of high-speed I / O interfaces is connected to the input port of the same set through a capacitor to achieve a self-loop transmission and reception of the high-speed I / O interface.

[0022] The programmable information processing circuit includes at least two general-purpose I / O ports. Each general-purpose I / O port is connected to the microsystem aging test station via a microsystem aging test fixture. At the microsystem aging test station, a pull-up resistor and a pull-down resistor are connected to each general-purpose I / O port. One end of the pull-up resistor is connected to the general-purpose I / O port and the other end is connected to the power supply. One end of the pull-down resistor is connected to the general-purpose I / O port and the other end is grounded.

[0023] The status data reported by the RF digital mixed-signal microsystem under test includes the unique identifier (ID) of the RF digital mixed-signal microsystem under test, the junction temperature of the RF digital mixed-signal microsystem under test, the aging power mode status of each chip, the RF transceiver clock lock indicator, the RF signal transceiver circuit local oscillator lock indicator, the self-test status and error count of the programmable information processing circuit, the self-test status and error count of the high-speed I / O interface, the self-test status and error count of the dynamic memory read / write, and the self-test status and error count of the static memory read / write.

[0024] The aging control processor receives data reported by each microsystem aging test station, including: the supply voltage and current of each channel of the adjustable power module, the status data reported by the RF digital mixed signal microsystem under test, and the case temperature T of the RF digital mixed signal microsystem under test. C The junction temperature T of the radio frequency digital mixed-signal microsystem under test J The status data of the MCU; the aging control processor calculates the total power consumption of the RF digital mixed signal microsystem under test based on the reported power supply voltage and current of each channel; when the total power consumption of a microsystem aging test station, the voltage or current of each channel, and the case temperature T of the RF digital mixed signal microsystem under test are... C Junction temperature T of the radio frequency digital mixed-signal microsystem under test J When any data exceeds the user-preset maximum value, the MCU at the corresponding workstation is notified to power off, and the fault data is recorded, indicating the cause of the fault.

[0025] The ambient temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to the present invention, in a preferred embodiment, includes a heat dissipation device comprising a metal heat sink located on the side of the radio frequency digital mixed signal microsystem under test and an adjustable speed cooling fan that is in direct contact with the upper surface of the radio frequency digital mixed signal microsystem under test.

[0026] When the MCU receives the aging start command and control temperature parameters from the aging control processor, it controls the adjustable power supply module to supply power to the RF digital mixed-signal microsystem under test and the heating device; at the same time, it compares the case temperature T of the RF digital mixed-signal microsystem under test reported by the temperature detection device. C The junction temperature T reported autonomously by the RF digital mixed-signal microsystem under test J ;

[0027] When T C and T J When the absolute value of the difference does not exceed 5℃, take T. C and T J The average value is used as the temperature detection result; when T C and T J When the absolute value of the difference is greater than 5°C, the adjustable power module of the microsystem aging test station stops supplying power to the microsystem under test (RF digital mixed signal) and reports the error alarm status information to the aging control processor.

[0028] When the shell temperature T C When the temperature is below the required control temperature, keep the heating device powered on, and turn off or reduce the speed of the cooling device fan.

[0029] When the shell temperature T C When the temperature exceeds the required control temperature, disconnect the power supply to the heating device or increase the fan speed of the cooling device.

[0030] Each adjustable power supply module includes at least two power supply channels, and the voltage value of each power supply channel can be adjusted by the resistance value of an external feedback resistor. Each adjustable power supply module includes a voltage monitoring channel and a serial interface. The MCU controls the adjustable power supply module to turn the power supply output on or off through the serial interface. The adjustable power supply module monitors the actual power supply voltage output to the RF digital mixed signal microsystem or heating device under test through the voltage monitoring channel, adjusts the output voltage according to the feedback results, and reports the voltage and current of each power supply channel to the MCU.

[0031] The adjustable power module is a general-purpose micro power module based on an independent PCB board design, which can be electrically connected and installed to the test station body through standard connectors;

[0032] The electrical connections provided through standard connectors include: power input to the adjustable power module from the microsystem aging test station, multiple power supplies output from the adjustable power module, and communication serial port and control I / O between the MCU and the adjustable power module.

[0033] The test station body is equipped with a feedback resistor that adjusts the power supply voltage of each channel of the adjustable power module. The feedback resistor is connected to the feedback IO port of the adjustable power module through a standard connector.

[0034] The microsystem aging test station also includes a status display module connected to the MCU, an LED connected to the microsystem under test (RF digital mixed signal), and a memory socket that connects the aging program configuration memory to the test station body.

[0035] The status display module is equipped with an LCD screen. The MCU can control the status display module to scroll and display the working status of the microsystem aging test station. The working status includes the voltage and current of each power supply and the monitoring status reported by the microsystem of the RF digital mixed signal under test.

[0036] The programmable information processing circuit of the RF digital mixed-signal microsystem under test can detect its own programmable logic operation status and high-speed IO transceiver status. It also detects the RF signal transceiver status of the RF signal transceiver circuit and the read / write status of the dynamic and static storage units of the RF digital mixed-signal microsystem under test. The status indicator signals of each part are output through a separate output port. Each output port is independently connected to an LED on the aging test station via a microsystem aging test fixture. When each part is aging normally, the output port outputs a high level, lighting the corresponding LED; when aging is abnormal, the output port outputs a low level, and the corresponding LED is off.

[0037] The memory socket is soldered onto the test station body, allowing the old program configuration memory to be freely plugged in and replaced.

[0038] This invention provides an aging method for a room-temperature dynamic aging device for a radio frequency digital mixed-signal microsystem, comprising the following steps:

[0039] S1. Turn on the external power supply to power the ambient temperature dynamic aging device. The aging control processor starts the initial program, detects the working status of the device, and notifies the host computer after confirming that the working status is normal.

[0040] S2. Users set the preset working status requirements of each microsystem aging test station through the host computer software, including whether it is turned on, aging temperature control, maximum allowable power consumption, maximum current of each power supply, and send the command to the aging control processor at one time.

[0041] S3. After receiving the instruction, the aging control processor notifies the MCU of the corresponding microsystem aging test station to start aging as required by the instruction, and sets the configurable clock generator to provide a reference clock for the microsystem aging test station.

[0042] S4. After receiving the start request, each MCU controls the adjustable power module to supply power to the RF digital mixed signal microsystem under test and starts the RF digital mixed signal microsystem under test to work.

[0043] S5. When the RF digital mixed signal microsystem under test starts, it reads the pre-configured aging program from the aging program configuration memory and starts dynamic aging. During the aging process, the programmable information processing circuit of the RF digital mixed signal microsystem under test continuously detects the correctness of the operation of the internal programmable information processing circuit according to the aging program and records the operation status.

[0044] The programmable information processing circuit outputs a 1MHz square wave signal from each general-purpose IO port and continuously outputs a set of designed incremental data frames from each high-speed IO interface. After passing through the coupling capacitor on the PCB board of the test station, the data frames are looped back to the input of the high-speed IO port. The programmable information processing circuit verifies the correctness of the data frames and monitors the working status of the high-speed IO interfaces.

[0045] The programmable information processing circuit controls the RF signal transceiver circuit of the RF digital mixed signal microsystem under test to complete the initialization configuration, detect the VCO lock-in status, and confirm normal operation. After confirming normal operation, it sends a specified modulation signal from each RF transmitting port, which is then looped back to the corresponding RF receiving port through the coupling capacitor on the PCB board of the test station. The programmable information processing circuit demodulates the received data and monitors the working status of the RF transceiver circuit. The programmable information processing circuit periodically writes a set of preset data into the dynamic storage unit and static storage unit of the RF digital mixed signal microsystem under test, and then reads back to compare the correctness of the data. The aging method of a room temperature dynamic aging device for RF digital mixed signal microsystem is completed.

[0046] In the preferred embodiment of the aging method of the ambient temperature dynamic aging device for a radio frequency digital mixed signal microsystem described in this invention, in step S5, the static storage unit writes data only once during the initial power-on process and continuously reads back the data during subsequent operation to compare the data correctness; the dynamic storage unit writes new data each time at regular intervals and then reads back to confirm its correctness.

[0047] During the aging process, the status monitoring of the programmable information processing circuit, general-purpose I / O ports, high-speed I / O interfaces and radio frequency signal transceiver circuits is continuously performed. The dynamic storage unit is read and written once every 5 to 10 seconds, and the static storage unit is read and verified once every 30 seconds.

[0048] In the preferred embodiment of the ambient temperature dynamic aging method for a radio frequency digital mixed signal microsystem described in this invention, in step S5, the radio frequency digital mixed signal microsystem under test outputs the detected programmable information processing circuit operating status, high-speed IO transceiver status, radio frequency signal transceiver circuit transceiver status, dynamic storage unit read / write status, and static storage unit read / write status to LEDs on the PCB of the test station body through an output port respectively; when the aging of each part is normal, the corresponding LED is lit to quickly determine the aging status of the microsystem.

[0049] In the preferred embodiment of the present invention, the aging method of the ambient temperature dynamic aging device for a radio frequency digital mixed signal microsystem is as follows: in step S5, the radio frequency digital mixed signal microsystem under test packages the self-test status information, the unique identifier ID, the junction temperature of the microsystem, and the aging power mode status of each chip into a data frame, and sends it to the MCU through the serial interface at regular intervals to determine whether the aging operation of the radio frequency digital mixed signal microsystem under test is normal.

[0050] The unique identifier (ID) of each microsystem is the factory serial number of the RF digital mixed signal microsystem under test. It serves as the identification code of the RF digital mixed signal microsystem under test and is used to identify and match its aging test data in subsequent data processing.

[0051] The internal operating temperature of the RF digital mixed-signal microsystem under test is determined by the junction temperature of the microsystem to be tested to ensure that the product is not damaged.

[0052] Self-test status information includes RF transceiver data clock lock indicator, RF signal transceiver circuit local oscillator lock indicator, programmable information processing circuit self-test status and error count, high-speed I / O interface self-test status and error count, dynamic storage unit read / write self-test status and error count, and static storage unit read / write self-test status and error count.

[0053] The MCU periodically reads all supply voltage and current data from the adjustable power module, as well as the microsystem case temperature T measured by the temperature detection device. C After being packaged together, they were sent to the Lao Lian control processor;

[0054] The temperature detection device is equipped with multiple detection points, each contacting a different area on the upper surface of the microsystem, to detect the temperature of the important chips integrated inside the microsystem. The temperature of chip number 1 is T. C1 Chip M monitors a temperature of T. CM The corresponding temperatures are reported to the MCU control microsystem for aging temperature.

[0055] The present invention discloses a room-temperature dynamic aging method for a radio frequency digital mixed-signal microsystem. In a preferred embodiment, when temperature difference control is performed between multiple chips within the radio frequency digital mixed-signal microsystem under test, and the aging temperature requirements of different chips within the microsystem differ, the aging set temperature for chip x is T. x The set temperature of chip y is T. y And T x >T y When T Cx Greater than T Cx When - is 105%, reduce the aging power of chip y, when T Cy Less than T Cx When - is 95% complete, increase the aging power of chip y;

[0056] When the aging process ends, the cooling phase begins. The MCU instructs the programmable information processing circuit to put all chips into low-power mode until cooling is complete.

[0057] The present invention discloses an aging method for a room-temperature dynamic aging device for a radio frequency digital mixed signal microsystem. In a preferred embodiment, the heating device operates under MCU control in the following states: full-power operation, half-power operation, and off. The adjustable-speed cooling fan of the heat dissipation device can adjust its speed under the control of the MCU.

[0058] Initially, the MCU controls the heating device to operate at full power, and the cooling fan is off. This continues until the temperature of the RF digital mixed-signal microsystem under test is only 5°C lower than the preset aging temperature. At this point, the MCU controls the adjustable-speed cooling fan to turn on and operate at low speed. When the temperature of the RF digital mixed-signal microsystem under test is 1°C higher than the preset aging temperature, the MCU controls the heating device to operate at half power and increases the speed of the adjustable-speed cooling fan over time. When the temperature of the RF digital mixed-signal microsystem under test is 3°C higher than the preset aging temperature, the MCU controls the heating device to turn off, and the adjustable-speed cooling fan operates at its maximum speed. When the temperature of the RF digital mixed-signal microsystem under test is again 1°C lower than the preset aging temperature, the MCU controls the heating device to operate at half power and decreases the speed of the adjustable-speed cooling fan over time. Finally, when the temperature of the RF digital mixed-signal microsystem under test is 3°C lower than the preset aging temperature, the MCU controls the heating device to operate at full power.

[0059] This invention provides a room-temperature dynamic aging apparatus and method for a radio frequency (RF) digital mixed-signal microsystem, comprising: an aging control processor, a programmable clock generator, and several microsystem aging test stations; each aging test station includes an independent MCU, a microsystem aging test fixture, a program configuration memory, a status display module, LEDs, and several adjustable power supply modules; the aging control processor sends control commands received from the host computer to the MCU at each aging test station, the MCU controls the dynamic aging of the microsystem at its station, and reports aging data and status information to the aging control processor, which collects and analyzes the aging data and finally reports it to the host computer. The MCU controls the RF digital mixed-signal microsystem to reach the preset temperature requirement by controlling the heating and cooling devices, and controls the adjustable power supply modules to cut off power in case of aging abnormality. The temperature detection device of the aging test fixture has multiple temperature detection points for detecting the individual temperatures of the multiple chips integrated in the microsystem; when the temperature difference between the chips is large, the MCU notifies the programmable information processing circuit within the microsystem to increase or decrease the aging power of the corresponding chip to ensure the consistency of the chip temperature.

[0060] The present invention has the following advantages:

[0061] (1) The microsystem aging method proposed in this invention can achieve more precise aging temperature control for each chip in the microsystem, taking into account the different power, actual temperature and allowable aging temperature of multiple chips in the microsystem.

[0062] (2) The ambient temperature dynamic aging device and method for radio frequency digital mixed signal microsystems proposed in this invention can complete the dynamic aging of large-scale complex microsystems at ambient temperature without the need for a temperature chamber, which can effectively improve the working life of peripheral complex circuits and is more convenient to use.

[0063] (3) Compared with the traditional aging process, the method used in this invention has more precise temperature control, is less likely to damage large-scale complex microsystems with high value, and is safer and more reliable; at the same time, the energy consumption of the independent heating station design is much lower than that of the temperature chamber, resulting in lower energy consumption and cost.

[0064] (4) The present invention adopts a multi-level pluggable and replaceable design, which maximizes the reusability of hardware and software between different customized microsystem aging devices, improves design efficiency and reduces costs.

[0065] (5) This invention simplifies the peripheral circuit connection of the radio frequency digital mixed signal microsystem as much as possible, while ensuring good cascading expansion capability; when the quantity of each production batch of high-value complex microsystems varies greatly, it can quickly adapt to the dynamic aging of microsystems of different quantities and batches through cascading expansion. Attached Figure Description

[0066] Figure 1A schematic diagram of a room-temperature dynamic aging device for a radio frequency digital mixed-signal microsystem;

[0067] Figure 2 A schematic diagram of a microsystem aging test fixture for a room-temperature dynamic aging device for a radio frequency digital mixed signal microsystem.

[0068] Figure 3 A schematic diagram of the temperature detection points of a room-temperature dynamic aging device for a radio frequency digital mixed signal microsystem, showing the aging test fixture for the microsystem.

[0069] Figure 4 This is a flowchart of an aging method for a room-temperature dynamic aging device for a radio frequency digital mixed signal microsystem.

[0070] Figure label:

[0071] 1. Aging control processor; 2. Programmable clock generator; 3. Microsystem aging test station; 31. Test station body; 32. MCU; 33. Microsystem aging test fixture; 331. Test socket; 332. Heat dissipation device; 3321. Metal heat sink; 3322. Adjustable speed cooling fan; 333. Heating device; 334. Temperature detection device; 34. Adjustable power supply module; 35. Aging program configuration memory; 36. Status display module; 37. LED; 38. Memory socket; 4. RF digital mixed signal microsystem under test; 41. Programmable information processing circuit; 411. High-speed IO interface; 412. General purpose IO; 42. RF signal transceiver circuit; 43. Dynamic storage unit; 44. Static storage unit. Detailed Implementation

[0072] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0073] Example 1

[0074] like Figures 1-4 As shown, a room temperature dynamic aging device and method for a radio frequency digital mixed signal microsystem is disclosed. The room temperature dynamic aging device includes an aging control processor 1, a programmable clock generator 2, and several microsystem aging test stations 3.

[0075] Each aging test station 3 contains a test station body 31, an independent MCU 32, a microsystem aging test fixture 33, several adjustable power modules 34, a program configuration memory 35, a status display module 36, LEDs 37, and a memory socket 38.

[0076] The aging control processor 1 communicates with the host computer via a gigabit Ethernet port, receiving aging control commands from the host computer and simultaneously reporting data and status information from all aging test stations 3 to the host computer. The aging control processor 1 also communicates with the MCU 32 on the microsystem aging test station 3 via a serial interface, sending aging control commands to the MCU 32 and receiving data and status information reported by the MCU 32. Furthermore, the aging control processor 1 controls the configurable clock generator 2 via the serial interface to generate multiple reference clocks of specified frequencies, providing them to each microsystem aging test station 3.

[0077] The microsystem aging test fixture 33 includes a test socket 331, a heat dissipation device 332, a heating device 333, and a temperature detection device 334. The test socket 331 is used to place the RF digital mixed signal microsystem 4 under test, mainly providing a repeatedly detachable electrical connection between the microsystem 4 and the PCB board of the aging test station body 31. The heat dissipation device 332 is placed on top of the test socket 331 and is in direct contact with the upper surface of the microsystem 4 to assist in heat dissipation and temperature control. The heating device 333 is placed inside the heat dissipation device 332 and can heat the entire heat dissipation device 332 and the microsystem 4 together when powered on. The temperature detection device 334 is located at the bottom of the heat dissipation device 332 and is in direct contact with the upper surface of the microsystem 4 to test the case temperature of the microsystem 4 and report it to the MCU 32.

[0078] The heat dissipation device 332 includes two parts: a metal heat sink 3321 and an adjustable speed cooling fan 3322.

[0079] The RF digital mixed signal microsystem 4 under test has a programmable information processing circuit 41, an RF signal transceiver circuit 42, a dynamic storage unit 43, and a static storage unit 44. The programmable information processing circuit 41 is responsible for configuring and controlling the dynamic curing of the other three parts, while detecting the curing status of the microsystem 4 and reporting the status data to the MCU 32.

[0080] The temperature detection device 334 has multiple detection points, which contact different areas on the upper surface of the microsystem 4. Each detection point corresponds to the center of a chip inside the microsystem 4 and is used to detect the temperature of that chip. The temperature monitored for chip number 1 is T. C1 Chip M monitors a temperature of T. CM These are reported to MCU 32 respectively, for accurate control of the aging temperature of microsystem 4.

[0081] While meeting the necessary conditions for aging, each chip in the microsystem 4 has high, medium and low power modes in its aging program. When the case temperature of multiple chips differs greatly, the MCU 32 can notify the programmable information processing circuit 41 through the status control interface to increase or decrease the power of a specific chip and improve the temperature consistency of each chip.

[0082] During initial operation, each chip in microsystem 4 is in medium-power mode; programmable information processing circuit 41, acting as chip 1, is responsible for controlling the aging power mode of the other chips; when the case temperature T of chip N... CN Greater than T C1 When the temperature reaches 105%, MCU32 instructs programmable information processing circuit 41 to reduce the aging power of chip N; when the case temperature T of chip N reaches 105%, MCU32 instructs programmable information processing circuit 41 to reduce the aging power of chip N; CN Less than T C1 When the temperature reaches 95%, MCU 32 instructs programmable information processing circuit 41 to increase the aging power of chip N; when the case temperature of all other chips is greater than T... C1 When the temperature reaches 105%, the MCU 32 instructs the programmable information processing circuit 41 to increase its own aging power; when the case temperature of all other chips is less than T... C1 When the power consumption reaches 95%, the MCU 32 notifies the programmable information processing circuit 41 to reduce its own aging power.

[0083] By adjusting the communication rate, various clock frequencies, and resource allocation, the power of a specific chip can be controlled to achieve localized temperature increases or decreases. For example, increasing the communication rate of a chip from 1 GHz to 2 GHz can significantly increase its power consumption.

[0084] Each adjustable power module 34 contains multiple power supplies, and the voltage value of each power supply can be adjusted by the resistance value of an external feedback resistor. The adjustable power module 34 has a voltage monitoring channel and a serial interface. The MCU 32 can control the adjustable power module 34 to turn the power supply output on or off through the serial interface. The adjustable power module 34 can monitor the actual power supply voltage output to the microsystem 4 or the heating device 333 through the voltage monitoring channel, adjust the output voltage according to the feedback result, and report the voltage and current of each power supply to the MCU 32.

[0085] The adjustable power module 34 is a general-purpose micro power module designed independently on a PCB board. It can be electrically connected and installed with the microsystem aging test station 3 through standard connectors. The electrical connections provided by the standard connectors include: the power input provided by the aging test station 3 to the adjustable power module 34, the multi-channel power supply output of the adjustable power module 34, the communication serial port between the MCU 32 and the adjustable power module 34, and other control I / O.

[0086] The feedback resistor used to adjust the power supply voltage of each channel of the adjustable power module 34 is installed on the microsystem aging test station 3 and connected to the feedback IO port of the adjustable power module 34 through a standard connector.

[0087] The aging program configuration memory 35 is connected to the aging test station 3 via a memory socket 38. The memory socket 38 is soldered onto the aging test station body 31, and the aging program configuration memory 35 can be plugged in and replaced at will.

[0088] The status display module 36 is equipped with an LCD screen. The MCU 32 can control the status display module 36 to scroll and display the working status of the station, including the voltage and current of each power supply, as well as the monitoring status reported by the RF digital mixed signal microsystem 4 under test.

[0089] The radio frequency signal transceiver circuit 42 has 4 radio frequency transmitting channels and 4 radio frequency receiving channels. Each radio frequency channel is connected to the aging test station 3 through the aging test fixture. Each radio frequency transmitting channel on the aging test station 3 is connected to a radio frequency receiving channel through a capacitor to complete the self-loop transmission and reception of radio frequency signals.

[0090] The programmable information processing circuit 41 has several sets of high-speed IO interfaces 411. Each set of high-speed IO interfaces 411 is connected to the aging test station 3 through an aging test fixture. The output port of each set of high-speed IO interfaces 411 on the aging test station 3 is connected to the input port of the same set through a capacitor, thus completing the self-loop transmission and reception of the high-speed IO interfaces 411.

[0091] The programmable information processing circuit 41 has several general-purpose IO412. Each general-purpose IO412 is connected to the aging test station 3 through the aging test fixture. On the aging test station 3, each general-purpose IO412 is connected to a pull-up resistor and a pull-down resistor. One end of the pull-up resistor is connected to the general-purpose IO412 and the other end is connected to the power supply. One end of the pull-down resistor is connected to the general-purpose IO412 and the other end is grounded.

[0092] The programmable information processing circuit 41 within the microsystem 4 detects its own programmable logic operation status and high-speed IO transceiver status. It also detects the transceiver status of the RF signal transceiver circuit 42 and the read / write status of the dynamic storage unit 43 and the static storage unit 44. The status indicator signals of each part are output through an output port. Each output port is independently connected to an LED 37 on the aging test station 3 through an aging test fixture. When each part of the aging process is normal, the output port outputs a high level, lighting up the corresponding LED 37. When the aging process is abnormal, the output port outputs a low level, and the corresponding LED 37 is not lit.

[0093] The status data reported by microsystem 4 includes the microsystem's unique identifier ID, the junction temperature of microsystem 4, the aging power mode status of each chip, the RF transceiver clock lock indicator, the RF signal transceiver circuit 42 local oscillator lock indicator, the programmable information processing circuit 41 self-test status and error count, the high-speed I / O interface 411 self-test status and error count, the dynamic storage unit 43 read / write self-test status and error count, and the static storage unit 44 read / write self-test status and error count, etc.

[0094] When the MCU 32 receives the aging start command and control temperature parameters from the aging control processor 1, it controls the adjustable power supply module 34 to supply power to the RF digital mixed signal microsystem 4 under test and the heating device 333; at the same time, it compares the microsystem 4 case temperature T reported by the temperature detection device 334 with the temperature of the microsystem 4. C The junction temperature T reported autonomously by the microsystem 4 J When T C and T J When the absolute value of the difference does not exceed 5℃, take T. C and T J The average value is used as the temperature detection result; when the temperature detection result is lower than the required control temperature, the heating device 333 is kept powered, and the fan of the heat dissipation device 332 is turned off or its speed is reduced; when the temperature detection result is higher than the required control temperature, the power supply to the heating device 333 is disconnected or the fan speed of the heat dissipation device 332 is increased. When T C and T J When the absolute value of the difference is greater than 5℃, the adjustable power supply module 34 of this station is controlled to stop the power supply of the microsystem 4 and report the error alarm status information to the old refining control processor 1.

[0095] The aging control processor 1 receives data reported from each aging test station 3, including: the power supply voltage and current of each channel of the adjustable power module 34, the status data reported by the microsystem 4, and the shell temperature T of the microsystem 4. C Microsystem 4 junction temperature T J and MCU 32 status data; the aging control processor 1 calculates the total power consumption of microsystem 4 based on the reported power supply voltage and current of each channel; when the total power consumption of microsystem 4, voltage or current of each channel, and microsystem 4 case temperature T of a certain aging test station 3 are... C Microsystem 4 junction temperature T J When any data exceeds the user-preset maximum value, the MCU 32 at that workstation is notified to power off, and the fault data is recorded, indicating the cause of the fault.

[0096] The microsystem 4 integrates M chips, each with its own junction temperature, T. J1 T J2 T J3 And T JMSince the junction temperatures of each chip differ to some extent, the programmable information processing circuit 41 collects the junction temperatures of each chip through internal communication of the microsystem 4 and reports them uniformly to the MCU 32 and the temperature control processor 1. When controlling the temperature, the MCU 32 takes the highest junction temperature among all chips as the junction temperature T of the microsystem 4. J And control the temperature according to the above method.

[0097] The aging process includes the following steps:

[0098] First, turn on the external power supply to power the microsystem aging device. The aging control processor 1 on the microsystem aging device starts the initial program, detects the working status of the device, and notifies the host computer after confirming that the working status is normal.

[0099] Secondly, the user sets the preset working status requirements of each microsystem aging test station 3 through the host computer software, including whether it is turned on, aging temperature control, maximum allowable power consumption, maximum current of each power supply, and other parameters, and sends the instructions to the aging control processor 1 in a unified manner at one time.

[0100] Upon receiving the instruction, the aging control processor 1 notifies the MCU 32 of the corresponding aging test station 3 to start aging as required by the instruction, and sets up a configurable clock generator to provide a reference clock for the corresponding station.

[0101] After receiving the start request, the MCU 32 of each old test station 3 controls the adjustable power supply module 34 to supply power to the RF digital mixed signal microsystem 4 under test, and starts the microsystem 4 to work.

[0102] When the RF digital mixed signal microsystem 4 under test starts, it reads the pre-configured aging program from the aging program configuration memory 35 and begins dynamic aging. During the aging process, the programmable information processing circuit 41 continuously checks the correctness of the operation of the internal programmable information processing circuit (41) according to the designed processing program and records the operation status. A 1MHz square wave signal is output from each general-purpose IO 412 port. A set of designed incremental data frames is continuously output from each group of high-speed IO ports 411. After passing through the coupling capacitor on the PCB board of the aging test station 3, the data frames loop back to the input terminal of the high-speed IO port 411 of this group and are processed by the programmable information processing circuit 41. The correctness of the data frame is verified, and the working status of the high-speed IO port 411 is monitored. The programmable information processing circuit 41 controls the RF signal transceiver circuit 42 to complete the initialization configuration, detects its VCO lock status, and after confirming normal operation, sends a specified modulation signal from each RF transmitting port. After passing through the coupling capacitor on the PCB board of the aging test station 3, the signal loops back to the corresponding RF receiving port. The programmable information processing circuit 41 demodulates the received data and monitors the working status of the RF transceiver circuit. The programmable information processing circuit 41 writes a set of preset data into the dynamic storage unit 43 and the static storage unit 44 in sequence at regular intervals, and then reads back to compare the correctness of the data.

[0103] Because the static storage unit 44 has a low write / erase lifespan, only on the order of 100,000 cycles, while the dynamic aging process lasts longer, exceeding 160 hours, and requires a similar steady-state lifespan test time of over 1000 hours, the static storage unit 44 only writes data once upon initial power-on during each dynamic aging process, and continuously reads back the data during subsequent operation to compare its correctness. In contrast, the dynamic storage unit 43 can periodically write new data each time, and then read back to confirm its correctness. Furthermore, the static storage unit 44 has a slower read / write rate and takes longer, so its read / write frequency during aging can be significantly lower than other modules. For example, during aging, continuous status monitoring of the programmable information processing circuit 41, the general-purpose IO412 port, the high-speed IO port, and the RF signal transceiver circuit 42 is required. The dynamic storage unit 43 undergoes a read / write check every 5-10 seconds, while the static storage unit 44 undergoes a data read check approximately every 30 seconds.

[0104] The RF digital mixed signal microsystem 4 under test will output the detected programmable logic operation status, high-speed IO transceiver status, RF signal transceiver circuit 42 transceiver status, and dynamic storage unit 43 and static storage unit 44 read / write status to LED 37 on the PCB of the aging test station 3 through an output port. When the aging of each part is normal, the corresponding LED 37 will be lit, so that the aging status of the microsystem 4 can be quickly determined manually.

[0105] On the other hand, the RF digital mixed-signal microsystem 4 under test packages its self-test status information, along with its unique identifier ID, junction temperature, and aging power mode status of each chip, into a data frame, and sends it to the MCU 32 periodically via the serial interface. The unique identifier ID is the factory serial number of each microsystem 4, serving as its identification code and used to identify and match its aging test data in subsequent data processing. The junction temperature of the microsystem 4 can be used to determine its internal operating temperature, ensuring that the product is not damaged. The self-test status information reported by the microsystem 4 may include RF transceiver data clock lock indication, RF signal transceiver circuit 42 local oscillator lock indication, programmable information processing circuit 41 self-test status and error count, high-speed IO interface 411 self-test status and error count, dynamic storage unit 43 read / write self-test status and error count, and static storage unit 44 read / write self-test status and error count, etc., to determine whether the aging operation of the microsystem 4 is normal.

[0106] In addition to collecting data reported by the RF digital mixed-signal microsystem 4 under test, the MCU 32 also periodically reads all power supply voltage and current data from the adjustable power supply module 34, as well as the case temperature T of the microsystem 4 tested by the temperature detection device 334. C After being packaged together, they were sent to the old refining control processor 1.

[0107] The temperature detection device 334 has multiple detection points, which respectively contact different areas on the upper surface of the microsystem 4, and are used to detect the temperature of each important chip integrated inside the microsystem 4. The temperature of chip No. 1 is T. C1 Chip M monitors a temperature of T. CM The corresponding temperatures are reported to MCU 32, which can be used to accurately control the aging temperature of the microsystem 4.

[0108] Typically, the programmable information processing circuit 41 can be defined as chip number 1, with T... C1 Alternatively, the highest temperature among all temperature detection points can be used as the overall microsystem shell temperature (T). C .

[0109] When controlling the overall heating and heat dissipation of microsystem 4, MCU 32 first receives the case temperature T of microsystem 4 measured by temperature detection device 334. C The junction temperature T of microsystem 4 reported by microsystem 4 itself J Because of the thermal resistance of the crust, there is a certain temperature difference between the two, and the measurement accuracy of the temperature detection device 334 and the on-chip temperature sensor inside the microsystem 4 is not high, usually with an error of ±2 to 3℃; therefore, in actual control, when T C and T J When the absolute value of the difference does not exceed 10℃, take T. C and T JThe average value is used as the temperature detection result. This temperature detection result is compared with the preset dynamic aging temperature to determine whether the temperature should be increased or decreased; when T C and T J When the absolute value of the difference is greater than 10℃, the temperature detection may be abnormal. The MCU 32 should control the adjustable power supply module 34 of this station to stop supplying power and report the error alarm status information.

[0110] The following method is used to control the temperature difference between multiple chips within the microsystem 4:

[0111] Within the microsystem 4, each chip meets the necessary conditions for aging, and each chip's aging program has high, medium, and low power modes. Initially, each chip in the microsystem 4 is in medium power mode. Once aging begins, the overall microsystem 4 case temperature T... C When the temperature rises to 90% of the preset temperature, the MCU 32 begins to notify the programmable information processing circuit 41 to control the aging power mode of other chips.

[0112] If the case temperature T of chip N is within the set time t... CN Always greater than T C1 If the temperature reaches 105%, then MCU 32 needs to instruct programmable information processing circuit 41 to reduce the aging power of chip N; when the case temperature T of chip N reaches 105%, then MCU 32 needs to instruct programmable information processing circuit 41 to reduce the aging power of chip N; CN Always less than T C1 When the temperature reaches 95%, MCU 32 instructs programmable information processing circuit 41 to increase the aging power of chip N. If the case temperature of all other chips is greater than T... C1 When the temperature reaches 105%, the MCU 32 instructs the programmable information processing circuit 41 to increase its own aging power; when the case temperature of all other chips is less than T... C1 When the power consumption reaches 95%, the MCU 32 notifies the programmable information processing circuit 41 to reduce its own aging power.

[0113] Furthermore, if the aging temperature requirements of different chips within the microsystem 4 are different, for example, if the aging set temperature of the programmable information processing circuit 41 is T1 and the set temperature of the radio frequency signal transceiver circuit 42 is T2 (T1>T2), then when T... C2 Greater than T C1 When -(T1-T2) is 105%, the aging power of the RF signal transceiver circuit 42 should be reduced. C2 Less than T C1 When -(T1-T2) reaches 95%, the aging power of the RF signal transceiver circuit 42 should be increased.

[0114] When the aging process ends, the cooling phase begins. The MCU 32 instructs the programmable information processing circuit 41 to put all chips into low-power mode until cooling is complete.

[0115] The heating device 333 of the microsystem aging test fixture 33 has three operating states: full power operation, half power operation, and off. The fan of the heat dissipation device 332 has an adjustable speed. All of the above adjustments can be controlled by the MCU 32. During the aging process controlled by MCU 32, initially, MCU 32 controls heating device 333 to operate at full power while the cooling fan is off. This continues until the temperature detected by microsystem 4 is only 5°C lower than the preset aging temperature. Then, MCU 32 controls the cooling fan to turn on at a lower speed. When the temperature detected by microsystem 4 is 1°C higher than the preset aging temperature, MCU 32 controls heating device 333 to operate at half power and increases the cooling fan speed over time. If the temperature detected by microsystem 4 is 3°C higher than the preset aging temperature, MCU 32 controls heating device 333 to turn off and the cooling fan to operate at its maximum speed. When the temperature detected by microsystem 4 is again 1°C lower than the preset aging temperature, MCU 32 controls heating device 333 to operate at half power and decreases the cooling fan speed over time. Finally, if the temperature detected by microsystem 4 is 3°C lower than the preset aging temperature, MCU 32 controls heating device 333 to operate at full power.

[0116] The MCU 32 outputs the aging working status, temperature, and voltage and current of each power supply of the microsystem 4 to the status display module 36, which displays the information on the LCD screen for easy manual monitoring.

[0117] The old-fashioned control processor 1 receives the power supply voltage and current of each channel reported by MCU 32, the status data reported by microsystem 4, and the case temperature T of microsystem 4. C Microsystem 4 junction temperature T J After obtaining the status data from MCU 32, the total power consumption of microsystem 4 is calculated based on the reported power supply voltage and current for each channel. This calculation is performed at a certain aging test station 3, considering the total power consumption of microsystem 4, the voltage or current for each channel, and the microsystem 4 case temperature T. C Microsystem 4 junction temperature T J When any data exceeds the user-preset maximum value, the MCU 32 at that workstation is notified to power off, and the fault data is recorded, indicating the cause of the fault; all aging data is uploaded to the host computer for storage, so as to facilitate data backtracking and comparison.

[0118] The aging program configuration memory 35 is connected to the aging test station 3 via a memory socket 38. The memory socket 38 is soldered onto the aging test station 3. The aging program configuration memory 35 can be plugged in and replaced at will. Therefore, it is not necessary to burn the program configuration memory 35 at each station individually. It is only necessary to remove the memory, burn it in batches on a dedicated burning board, and then install it back onto the aging test station 3 for use.

[0119] The adjustable power module 34 is designed as a standalone, PCB-based, universal micro power module that can be electrically connected and installed to the microsystem aging test station 3 via standard connectors. The adjustable power module 34 is designed to include multiple power supplies, and the voltage value of each power supply can be adjusted by an external feedback resistor. This feedback resistor is installed on the microsystem aging test station 3 and connected to the feedback I / O port of the adjustable power module 34 via standard connectors. Therefore, although the aging test station 3 requires many different types of power supply voltages and each adjustable power module 34 needs to output a different voltage, a unified adjustable power module 34 can be used in this design, and its output voltage is determined by the corresponding port of the aging test station 3.

[0120] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A room-temperature dynamic aging device for a radio frequency digital mixed-signal microsystem, characterized in that: Includes an aging control processor (1) and a programmable clock generator (2) electrically connected to the aging control processor (1), and a microsystem aging test station (3); The radio frequency digital mixed signal microsystem (4) to be tested is connected to the microsystem aging test station (3). The number of the microsystem aging test station (3) is one or more. Each microsystem aging test station (3) can independently perform aging test and temperature control of one radio frequency digital mixed signal microsystem (4) to be tested. The microsystem aging test station (3) includes a test station body (31), an MCU (32) and a microsystem aging test fixture (33) connected to the test station body (31), an adjustable power supply module (34) connected to the MCU (32) and the microsystem aging test fixture (33), and an aging program configuration memory (35) connected to the RF digital mixed signal microsystem (4) to be tested; The aging control processor (1) communicates with the host computer via a gigabit Ethernet port, receives aging control commands from the host computer, and reports the data and status information of all microsystem aging test stations (3) to the host computer; the aging control processor (1) completes data communication with the MCU (32) via a serial interface, sends aging control commands to the MCU (32), and receives the data and status information reported by the MCU (32); the aging control processor (1) controls the programmable clock generator (2) via a serial interface to generate at least two reference clocks of specified frequencies for each microsystem aging test station (3) to use; The microsystem aging test fixture (33) includes a test socket (331) connected to the radio frequency digital mixed signal microsystem (4) under test, a heat dissipation device (332) connected to the top of the test socket (331), a heating device (333) connected inside the heat dissipation device (332), and a temperature detection device (334) connected to the bottom of the heat dissipation device (332). The test socket (331) provides a repeatedly detachable electrical connection between the radio frequency digital mixed signal microsystem (4) under test and the PCB board of the test station body (31). The heat dissipation device (332) directly contacts the upper surface of the radio frequency digital mixed signal microsystem (4) under test, assisting in heat dissipation and temperature control. When the heating device (333) is powered on, it only heats the heat dissipation device (332) and the radio frequency digital mixed signal microsystem (4) under test together. The temperature detection device (334) directly contacts the upper surface of the radio frequency digital mixed signal microsystem (4) under test and tests the case temperature and reports it to the MCU (32). The radio frequency digital mixed signal microsystem (4) under test includes a programmable information processing circuit (41), a radio frequency signal transceiver circuit (42), a dynamic storage unit (43), and a static storage unit (44); The programmable information processing circuit (41) configures and controls the dynamic aging operation of the radio frequency signal transceiver circuit (42), the dynamic storage unit (43) and the static storage unit (44), and detects the aging status and reports the status data to the MCU (32); The radio frequency digital mixed signal microsystem (4) under test integrates M chips. The temperature detection device (334) includes at least two detection points that respectively contact different areas on the upper surface of the radio frequency digital mixed signal microsystem (4) under test. Each detection point corresponds to the center position of a chip inside the radio frequency digital mixed signal microsystem (4) under test and detects the chip temperature and reports it to the MCU (32) respectively. Each of the aging programs of the radio frequency digital mixed signal microsystem (4) chip under test has a high power mode state, a medium power mode state and a low power mode state; when the case temperature difference of multiple chips exceeds the threshold, the MCU (32) notifies the programmable information processing circuit (41) through the status control interface to increase or decrease the power of the chip by adjusting the communication rate, clock frequency and resource quantity to perform local heating and cooling.

2. The ambient temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to claim 1, characterized in that: In the radio frequency digital mixed signal microsystem (4) under test, chip 1 monitors a temperature of T. C1 The temperature monitored by chip M is T. CM T C1 ... T CM The case temperature is used to control the aging temperature of the radio frequency digital mixed signal microsystem (4) under test; The junction temperatures of the M chips in the radio frequency digital mixed signal microsystem (4) under test are respectively T J1 T J2 T J3 And T JM The programmable information processing circuit (41) collects the junction temperatures of each chip through the internal communication of the RF digital mixed signal microsystem under test (4) and reports them uniformly to the MCU (32) and the aging control processor (1); the MCU (32) takes the highest junction temperature among the chips as the junction temperature T of the RF digital mixed signal microsystem under test (4) when controlling the temperature. J And control the temperature; During initial operation, each chip in the radio frequency digital mixed signal microsystem (4) under test is in the medium power mode, and the programmable information processing circuit (41) acts as chip 1 to control the aging power mode of chips other than chip 1. When chip N monitors temperature T CN Greater than T C1 When the temperature reaches 105%, the MCU (32) instructs the programmable information processing circuit (41) to reduce the aging power of chip N; when chip N monitors temperature T CN Less than T C1 When the temperature reaches 95%, the MCU (32) instructs the programmable information processing circuit (41) to increase the aging power of chip N; when the monitored temperature of all chips except chip 1 is greater than T... C1 When the temperature reaches 105%, the MCU (32) notifies the programmable information processing circuit (41) to increase its aging power; when the monitored temperature of all chips except chip 1 is less than T C1 When the aging power reaches 95%, the MCU (32) notifies the programmable information processing circuit (41) to reduce its own aging power.

3. The ambient temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to claim 2, characterized in that: The radio frequency signal transceiver circuit (42) includes at least two radio frequency transmitting channels and at least two radio frequency receiving channels. Each radio frequency channel is connected to the micro system aging test station (3) through the micro system aging test fixture (33). The micro system aging test station (3) is connected to a radio frequency receiving channel through a capacitor to perform a self-loop transmission and reception of radio frequency signals. The programmable information processing circuit (41) includes at least two sets of high-speed IO interfaces (411). Each set of high-speed IO interfaces (411) is connected to the microsystem aging test station (3) through the microsystem aging test fixture (33). The output port of each set of high-speed IO interfaces (411) is connected to the input port of the same set through a capacitor to perform the self-loop transmission and reception of the high-speed IO interface (411). The programmable information processing circuit (41) includes at least two general-purpose I / O ports (412). Each general-purpose I / O port (412) is connected to the microsystem aging test station (3) through the microsystem aging test fixture (33). On the microsystem aging test station (3), a pull-up resistor and a pull-down resistor are connected to each general-purpose I / O port (412). One end of the pull-up resistor is connected to the general-purpose I / O port (412), and the other end is connected to the power supply. One end of the pull-down resistor is connected to the general-purpose I / O port (412), and the other end is grounded. The status data reported by the RF digital mixed signal microsystem under test (4) includes the unique identifier ID of the RF digital mixed signal microsystem under test (4), the junction temperature of the RF digital mixed signal microsystem under test (4), the aging power mode status of each chip, the RF transceiver data clock lock indicator, the local oscillator lock indicator of the RF signal transceiver circuit (42), the self-test status and error count of the programmable information processing circuit (41), the self-test status and error count of the high-speed IO interface (411), the self-test status and error count of the dynamic memory read / write, and the self-test status and error count of the static memory read / write. The aging control processor (1) receives data reported by each of the microsystem aging test stations (3), including: the power supply voltage and current of each channel of the adjustable power module (34), the status data reported by the RF digital mixed signal microsystem under test (4), and the case temperature T of the RF digital mixed signal microsystem under test (4). C The junction temperature T of the radio frequency digital mixed signal microsystem (4) under test J and the status data of the MCU (32); the aging control processor (1) calculates the total power consumption of the RF digital mixed signal microsystem (4) under test based on the reported power supply voltage and current of each channel; when the total power consumption of a microsystem aging test station (3), the voltage or current of each channel, and the case temperature T of the RF digital mixed signal microsystem (4) under test are... C The junction temperature T of the radio frequency digital mixed signal microsystem under test (4) J When any data exceeds the user-preset maximum value, the MCU (32) at the workstation is notified to power off, and the fault data is recorded and the cause of the fault is indicated.

4. The ambient temperature dynamic aging device for a radio frequency digital mixed signal microsystem according to claim 1, characterized in that: The heat dissipation device (332) includes a metal heat sink (3321) located on the side of the radio frequency digital mixed signal microsystem (4) under test and an adjustable speed cooling fan (3322) that is in direct contact with the upper surface of the radio frequency digital mixed signal microsystem (4) under test; When the MCU (32) receives the aging start command and control temperature parameters issued by the aging control processor (1), it controls the adjustable power supply module (34) to supply power to the radio frequency digital mixed signal microsystem (4) under test and the heating device (333); at the same time, it compares the case temperature T of the radio frequency digital mixed signal microsystem (4) under test reported by the temperature detection device (334). C The junction temperature T reported autonomously by the radio frequency digital mixed signal microsystem under test (4) J ; When T C and T J When the absolute value of the difference does not exceed 5℃, take T. C and T J The average value is used as the temperature detection result; when T C and T J When the absolute value of the difference is greater than 5°C, the adjustable power module (34) of the microsystem aging test station (3) stops the power supply to the radio frequency digital mixed signal microsystem (4) under test and reports the error alarm status information to the aging control processor (1). When the shell temperature T C When the temperature is below the required control temperature, the power supply to the heating device (333) is maintained, while the fan of the heat dissipation device (332) is turned off or its speed is reduced. When the shell temperature T C When the temperature exceeds the required control temperature, disconnect the power supply to the heating device (333) or increase the fan speed of the heat dissipation device (332); Each of the adjustable power modules (34) includes at least two power supplies, and the voltage value of each power supply can be adjusted by the resistance value of an external feedback resistor. Each adjustable power module (34) includes a voltage monitoring channel and a serial interface. The MCU (32) controls the adjustable power module (34) to turn on or off the power supply output through the serial interface. The adjustable power module (34) monitors the actual power supply voltage output to the radio frequency digital mixed signal microsystem (4) under test or the heating device (333) through the voltage monitoring channel, adjusts the output voltage according to the feedback result, and reports the voltage and current of each power supply to the MCU (32). The adjustable power module (34) is a general-purpose micro power module designed independently based on a PCB board. It can be electrically connected and installed to the test station body (31) through standard connectors. The electrical connections provided by the standard connectors include: the power input provided by the microsystem aging test station (3) to the adjustable power module (34), the multi-channel power supply output by the adjustable power module (34), and the communication serial port and control I / O between the MCU (32) and the adjustable power module (34); The test station body (31) is equipped with a feedback resistor that adjusts the power supply voltage of each channel of the adjustable power module (34). The feedback resistor is connected to the feedback IO port of the adjustable power module (34) through a standard connector. The microsystem aging test station (3) also includes a status display module (36) connected to the MCU (32), an LED (37) connected to the RF digital mixed signal microsystem (4) under test, and a memory socket (38) connecting the aging program configuration memory (35) to the test station body (31). The status display module (36) is equipped with an LCD screen. The MCU (32) can control the status display module (36) to scroll and display the working status of the microsystem aging test station (3). The working status includes the voltage and current of each power supply and the monitoring status reported by the microsystem (4) of the radio frequency digital mixed signal under test. The programmable information processing circuit (41) of the RF digital mixed signal microsystem (4) under test can detect its own programmable logic operation status and high-speed IO transceiver status. At the same time, it can also detect the transceiver status of the RF signal transceiver circuit (42) of the RF digital mixed signal microsystem (4) under test and the read / write status of the dynamic storage unit (43) and static storage unit (44). The status identification signal of each part is output through an output port. Each output port is independently connected to an LED (37) on the microsystem aging test station (3) through the microsystem aging test fixture (33). When each part of the aging is normal, the output port outputs a high level and lights up the corresponding LED (37). When the aging is abnormal, the output port outputs a low level and the corresponding LED (37) does not light up. The memory socket (38) is soldered onto the test station body (31) to allow the aging program configuration memory (35) to be arbitrarily plugged in and replaced.

5. The aging method of a room-temperature dynamic aging apparatus for a radio frequency digital mixed-signal microsystem according to any one of claims 1 to 4, characterized in that: Includes the following steps: S1. Turn on the external power supply to power the ambient temperature dynamic aging device. The aging control processor (1) starts the initial program, detects the working status of the device, and notifies the host computer after confirming that the working status is normal. S2. The user sets the preset working status requirements of each microsystem aging test station (3) through the host computer software, including whether it is turned on, aging temperature control, maximum allowable power consumption, maximum current of each power supply, and sends the command to the aging control processor (1) at one time. S3. After receiving the instruction, the aging control processor (1) notifies the MCU (32) of the corresponding microsystem aging test station (3) to start aging according to the instruction requirements, and sets the programmable clock generator (2) to provide a reference clock for the microsystem aging test station (3). S4. After receiving the start request, each of the MCUs (32) controls the adjustable power supply module (34) to supply power to the radio frequency digital mixed signal microsystem (4) under test and start the radio frequency digital mixed signal microsystem (4) under test to work. S5. When the radio frequency digital mixed signal microsystem (4) under test is started, it reads the pre-configured aging program from the aging program configuration memory (35) and starts dynamic aging. During the aging process, the programmable information processing circuit (41) of the radio frequency digital mixed signal microsystem (4) under test continuously detects the correctness of the operation of the internal programmable information processing circuit (41) according to the aging program and records the operation status. The programmable information processing circuit (41) outputs a 1MHz square wave signal from each general-purpose IO port (412) and continuously outputs a set of designed incremental data frames from each high-speed IO interface (411). After passing through the coupling capacitor on the PCB board of the test station body (31), the data frames loop back to the input terminal of the high-speed IO port. The programmable information processing circuit (41) verifies the correctness of the data frames and monitors the working status of the high-speed IO interface (411). The programmable information processing circuit (41) controls the radio frequency signal transceiver circuit (42) of the radio frequency digital mixed signal microsystem (4) under test to complete the initialization configuration, detect the VCO lock state, and after confirming normal operation, send a specified modulation signal from each radio frequency transmitting port through the coupling capacitor on the PCB board of the test station body (31) and loop it back to the corresponding radio frequency receiving port. The programmable information processing circuit (41) demodulates the received data and monitors the working status of the radio frequency transceiver circuit. The programmable information processing circuit (41) writes a set of preset data into the dynamic storage unit (43) and the static storage unit (44) of the radio frequency digital mixed signal microsystem (4) under test in a timely manner, and then reads back to compare the correctness of the data. The aging method of a room temperature dynamic aging device for radio frequency digital mixed signal microsystem is completed.

6. The aging method of a room-temperature dynamic aging device for a radio frequency digital mixed-signal microsystem according to claim 5, characterized in that: In step S5, during each dynamic aging process, the static storage unit (44) writes data only once at the initial power-on and continuously reads back the data during subsequent operation to compare the data correctness; the dynamic storage unit (43) writes new data each time at regular intervals and then reads back to confirm its correctness. During the aging process, the status monitoring of the programmable information processing circuit (41), general-purpose IO port (412), high-speed IO interface (411) and the radio frequency signal transceiver circuit (42) is continuously performed. The dynamic storage unit (43) is read and written once every 5 to 10 seconds, and the static storage unit (44) is read and verified once every 30 seconds.

7. The aging method of a room-temperature dynamic aging device for a radio frequency digital mixed-signal microsystem according to claim 5, characterized in that: In step S5, the tested radio frequency digital mixed signal microsystem (4) outputs the detected operating status of the programmable information processing circuit (41), the high-speed IO transceiver status, the transceiver status of the radio frequency signal transceiver circuit (42), the read / write status of the dynamic storage unit (43), and the read / write status of the static storage unit (44) to the LED (37) on the PCB of the test station body (31) through an output port respectively; when the aging process of each part is normal, the corresponding LED (37) is lit to quickly determine the aging status of the microsystem.

8. The aging method of a room-temperature dynamic aging device for a radio frequency digital mixed-signal microsystem according to claim 5, characterized in that: In step S5, the RF digital mixed signal microsystem under test (4) packages the self-test status information, unique identifier ID, microsystem junction temperature, and aging power mode status of each chip into a data frame, and sends it to the MCU (32) through the serial interface at regular intervals to determine whether the aging operation of the RF digital mixed signal microsystem under test (4) is normal. The unique identifier ID of the microsystem is the factory serial number of each of the radio frequency digital mixed signal microsystems (4) under test, and serves as the identification code of the radio frequency digital mixed signal microsystem (4) under test. It is used to identify and match its aging test data in subsequent data processing. The internal operating temperature of the RF digital mixed signal microsystem (4) under test is determined by the junction temperature of the RF digital mixed signal microsystem (4) under test to ensure that the product is not damaged. The self-test status information includes the radio frequency transceiver data clock lock indicator, the local oscillator lock indicator of the radio frequency signal transceiver circuit (42), the self-test status and error count of the programmable information processing circuit (41), the self-test status and error count of the high-speed IO interface (411), the read / write self-test status and error count of the dynamic storage unit (43), and the read / write self-test status and error count of the static storage unit (44). The MCU (32) periodically reads all power supply voltage and current data of the adjustable power module (34) and the microsystem case temperature T measured by the temperature detection device (334). C After being packaged together, they are sent to the old refining control processor (1); The temperature detection device (334) is equipped with multiple detection points, each contacting a different area on the upper surface of the microsystem, to detect the temperature of each important chip integrated inside the microsystem. The temperature of chip 1 is T. C1 Chip M monitors a temperature of T. CM The corresponding temperatures are reported to the MCU (32) to control the aging temperature of the microsystem.

9. The aging method of a room-temperature dynamic aging device for a radio frequency digital mixed-signal microsystem according to claim 5, characterized in that: When temperature difference control is performed between multiple chips in the RF digital mixed signal microsystem (4) under test, and the aging temperature requirements of different chips in the RF digital mixed signal microsystem (4) under test are different, the aging temperature setting of chip x is T. x The set temperature of chip y is T. y And T x >T y When T Cx Greater than T Cx -(T x -T y When T is 105%, reduce the aging power of chip y. Cy Less than T Cx -(T x -T y When the aging power of chip y is 95%, increase the aging power of chip y. When the aging process ends, the cooling phase begins. The MCU (32) notifies the programmable information processing circuit (41) to put all chips into low-power mode until the cooling is complete.

10. The aging method of a room-temperature dynamic aging device for a radio frequency digital mixed-signal microsystem according to claim 5, characterized in that: The heating device (333) operates under the control of the MCU (32) in the following states: full power operation, half power operation and off. The adjustable speed cooling fan (3322) of the heat dissipation device (332) can adjust its speed under the control of the MCU (32). Initially, the MCU (32) controls the heating device (333) to operate at full power, and the cooling fan is turned off. This continues until the temperature detection result of the RF digital mixed-signal microsystem (4) under test is only 5°C lower than the preset aging temperature. Then, the MCU (32) controls the adjustable-speed cooling fan (3322) to turn on and operate at low speed. When the temperature detection result of the RF digital mixed-signal microsystem (4) under test is 1°C higher than the preset aging temperature, the MCU (32) controls the heating device (333) to operate at half power and increases the speed of the adjustable-speed cooling fan (3322) over time. When the temperature detection result of the RF digital mixed-signal microsystem (4) under test is 1°C higher than the preset aging temperature, the MCU (32) controls the heating device (333) to operate at half power and increases the speed of the adjustable-speed cooling fan (3322) over time. When the temperature detection result of the RF digital mixed signal microsystem (4) is 3°C higher than the preset aging temperature, the MCU (32) controls the heating device (333) to turn off and the adjustable speed cooling fan (3322) to run at the highest speed. When the temperature detection result of the RF digital mixed signal microsystem (4) under test is again lower than the preset aging temperature by 1°C, the MCU (32) controls the heating device (333) to run at half power and reduces the speed of the adjustable speed cooling fan (3322) over time. When the temperature detection result of the RF digital mixed signal microsystem (4) under test is lower than the preset aging temperature by 3°C, the MCU (32) controls the heating device (333) to run at full power.

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