Substrate processing apparatus using supercritical fluid and driving method thereof

Abstract

A substrate processing apparatus includes: a reactor having a processing space formed therein; a fluid supply unit that supplies a supercritical fluid into the treatment space of the reactor; and a controller that controls the reactor and the fluid supply unit. The controller controls the reactor and the fluid supply unit to perform one of cleaning the processing space by using the supercritical fluid and drying the substrate placed in the processing space by using the supercritical fluid in response to whether a state of the supercritical fluid supplied to the reactor satisfies a set condition.

Description

Technical Field

[0001] The present disclosure relates to a substrate processing apparatus using a supercritical fluid and a driving method thereof. Background Art

[0002] When manufacturing semiconductor devices or display devices, various processes such as photolithography, etching, ashing, ion implantation, thin film deposition and cleaning are performed. In this case, the photolithography process includes a coating process, an exposure process and a developing process. A photoresist film is formed on a substrate (i.e., a coating process), a circuit pattern is exposed on the substrate formed with the photoresist film (i.e., an exposure process), and the exposed area of ​​the substrate is selectively developed (i.e., a developing process). Then, the developer used in the developing process is dried.

[0003] When the developer is dried by the spin method, problems such as tilting, bridging, jumping, and collapse of the photoresist film may occur.

[0004] When a developer is dried using a supercritical fluid, the photoresist film components in the developer may be extracted and remain on the substrate because the supercritical fluid is not fully mixed with the photoresist film components in the developer. The interior of the dryer may be contaminated by the photoresist film components. Summary of the invention

[0005] An object of the present disclosure is to provide a substrate processing apparatus capable of drying a developer stably and efficiently.

[0006] According to one aspect of the present disclosure, a substrate processing device includes: a reactor having a processing space formed therein; a fluid supply unit that supplies a supercritical fluid into the processing space of the reactor; and a controller that controls the reactor and the fluid supply unit. The controller controls the reactor and the fluid supply unit to perform one of the following in response to whether the state of the supercritical fluid supplied to the reactor satisfies a set condition: cleaning the processing space by using the supercritical fluid, and drying a substrate placed in the processing space by using the supercritical fluid.

[0007] According to one aspect of the present disclosure, a substrate processing device includes: a first chamber in which a developer treatment process is performed; a second chamber in which a drying process is performed using a supercritical fluid; and a controller that controls the first chamber and the second chamber. The controller controls a first substrate so that the first substrate is placed in the first chamber, a first cleaning is performed on a processing space of the second chamber by using a supercritical fluid having a first state that does not satisfy a set condition, a developer treatment process is performed on the first substrate placed in the first chamber, the first substrate that has been subjected to the developer treatment process is transferred from the first chamber to the second chamber, and a first drying process is performed on the first substrate by using a supercritical fluid having a second state that satisfies the set condition.

[0008] Another object of the present disclosure is to provide a method for driving a substrate processing apparatus capable of stably and efficiently drying a developer.

[0009] According to one aspect of the present disclosure, a driving method of a substrate processing device includes: placing a first substrate in a first chamber; performing a first cleaning on a processing space of a second chamber by using a supercritical fluid, wherein the supercritical fluid has a first state that does not satisfy a set condition; after the supercritical fluid has a second state that satisfies the set condition, performing a developer treatment process on the first substrate placed in the first chamber; transferring the first substrate that has been subjected to the developer treatment process from the first chamber to the second chamber; and performing a drying process on the first substrate by using the supercritical fluid having the second state that satisfies the set condition.

[0010] The objects of the present disclosure are not limited to those described above, and additional objects of the present disclosure not mentioned herein will be clearly understood by those skilled in the art from the following description of the present disclosure.

[0011] In order to achieve the above-mentioned purpose, according to one aspect of the present disclosure, a substrate processing device includes: a reactor having a processing space formed therein; a fluid supply unit that supplies a supercritical fluid into the reactor; and a controller that controls the reactor and the fluid supply unit, wherein when the supercritical fluid supplied to the reactor does not meet the set conditions, the controller controls the cleaning of the processing space by using the supercritical fluid, and when the supercritical fluid supplied to the reactor meets the set conditions, the controller controls the drying of a substrate placed in the processing space by using the supercritical fluid.

[0012] Details of other embodiments are included in the detailed description and accompanying drawings.

[0013] However, the aspects of the present disclosure are not limited to those set forth herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure belongs by referring to the detailed description of the present disclosure given below. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The above and other aspects and features of the present disclosure will become more apparent by describing in detail example embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0015] Figure 1 is a conceptual diagram showing a substrate processing apparatus according to some embodiments of the present disclosure;

[0016] Figure 2 and Figure 3 It shows Figure 1 A diagram of the reactor shown;

[0017] Figure 4 It shows Figure 1 A diagram of a fluid supply unit is shown;

[0018] Figure 5 is a flowchart showing a method for driving a substrate processing apparatus according to some embodiments of the present disclosure;

[0019] Figures 6 to 8 is an example of a cleaning operation of a reactor using a supercritical fluid;

[0020] Fig. 9 is a graph showing an example pressure change inside a reactor when a cleaning operation of the reactor is performed using a supercritical fluid;

[0021] Fig.10 is a flowchart showing a method for driving a substrate processing apparatus according to some embodiments of the present disclosure;

[0022] Fig.11 is a block diagram showing a substrate processing apparatus according to some embodiments of the present disclosure;

[0023] Fig.12 is a flowchart showing a method for driving a substrate processing apparatus according to some embodiments of the present disclosure;

[0024] Fig.13 is a diagram illustrating a driving method of a substrate processing apparatus according to some embodiments of the present disclosure; and

[0025] Fig.14 is a diagram illustrating a driving method of a substrate processing apparatus according to some embodiments of the present disclosure. DETAILED DESCRIPTION

[0026] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. The same elements in the drawings will use the same reference numerals, and repeated descriptions of the corresponding elements will be omitted.

[0027] Figure 1is a conceptual diagram illustrating a substrate processing apparatus according to some embodiments of the present disclosure.

[0028] Reference Figure 1 , a substrate processing apparatus according to some embodiments of the present disclosure includes a reactor 100, a fluid supply unit 300, and a discharge unit 400. A controller (not shown) controls overall operations of the substrate processing apparatus, such as the reactor 100, the fluid supply unit 300, and the discharge unit 400.

[0029] The reactor 100 includes a processing space formed therein so as to perform a process for a supercritical fluid. The process for a supercritical fluid may be a drying process, a deposition process, etc., but is not limited thereto. Hereinafter, the drying process will be described as an example. Figure 2 and Figure 3 An example configuration of the reactor 100 is described in detail.

[0030] The fluid supply unit 300 is used to generate, store and supply supercritical fluid. Figure 4 An example configuration of the fluid supply unit 300 is described in detail.

[0031] The exhaust unit 400 exhausts the fluid inside the reactor 100 to the outside of the processing space.

[0032] A supercritical fluid is a material having a temperature and pressure higher than or equal to the critical point of the material, and having the diffusivity of the gas phase of the material and the solubility of the liquid phase of the material. As a material of the supercritical fluid, carbon dioxide (CO2), water (H2O), methane (CH4), ethane (C2H6), propane (C3H8), ethylene (C2H4), propylene (C3H6), methanol (CH3OH), ethanol (C2H5OH), acetone (C3H6O), etc. can be used, but are not limited thereto. In the following, carbon dioxide will be described as an example material of the supercritical fluid.

[0033] The supply pipe 390 (see region A) connected to the reactor 100 can maintain a normal pressure / room temperature state. That is, at least a portion of the supply pipe 390 is exposed to a temperature lower than the set temperature and a pressure lower than the set pressure. In order to avoid safety accidents, when the supercritical process is not performed, the inside of the supply pipe 390 remains free of supercritical fluid (that is, the supercritical fluid is discharged from the inside of the supply pipe 390). Therefore, when the supercritical process starts, the high temperature / ultra-high pressure fluid supplied from the fluid supply unit 300 may cause heat loss and pressure loss when passing through the supply pipe 390 of room temperature / normal pressure. Therefore, due to heat loss and pressure loss, the fluid may not be able to maintain a normal supercritical state. That is, the fluid that generates heat loss and pressure loss can be supplied to the reactor 100 in an unstable state mixed with liquid, gas, etc. This unstable state of fluid may reduce the drying capacity, thereby causing process defects.

[0034] In the substrate processing apparatus according to some embodiments of the present disclosure, a sensor 109 for measuring the state of the supercritical fluid supplied to the reactor 100 may be installed in the reactor 100. The state of the supercritical fluid may be, for example, temperature and / or pressure, but is not limited thereto. For example, the temperature and / or pressure of the supercritical fluid measured by the sensor 109 may represent the state of the supercritical fluid.

[0035] According to the sensing result, the drying process of the substrate may be performed or not. Instead of performing the drying process of the substrate, the processing space inside the reactor 100 may be cleaned. For example, when the state of the supplied supercritical fluid does not meet the set conditions, the supercritical fluid that does not meet the set conditions is used to clean the processing space. On the other hand, when the state of the supplied supercritical fluid meets the set conditions, the supercritical fluid may be used to dry the substrate placed in the processing space.

[0036] In this case, the set condition is a state of a supercritical fluid capable of effectively performing a drying process, and may be, for example, a set temperature condition and a set pressure condition. The set temperature condition and the set pressure condition are conditions under which carbon dioxide can sufficiently maintain a supercritical state, and may be pre-set conditions.

[0037] According to the above operation, the process defects that occur in the substrate after the supercritical drying process can be significantly reduced. By cleaning the inside of the reactor 100, it is possible to prevent the substrate from being contaminated by particles inside the reactor 100. Since a supercritical fluid that meets the set conditions is used, the effects that may occur due to the use of an unstable fluid can be minimized. Using a supercritical fluid that meets the specified conditions can help minimize any potential effects that may be produced by using an unstable fluid.

[0038] Figure 2 and Figure 3 It shows Figure 1 Diagram of the reactor shown.

[0039] Reference Figure 2 and Figure 3 The reactor 100 includes an upper container 110 , a support 119 , a baffle 120 , a lower container 130 , and a support plate (or hot plate) 150 .

[0040] The containers 110 and 130 provide a processing space 180 for processing the substrate W. The containers 110 and 130 include an upper container 110 and a lower container 130, and are detachably coupled to each other to open or close the containers 110 and 130. Specifically, the upper container 110 and the lower container 130 can be opened or closed by the driving unit 190 in an open position for opening the processing space 180 (see Figure 2 ) and a closed position for sealing the processing space 180 (see Figure 3 The driving unit 190 moves at least one of the upper container 110 and the lower container 130 to close or open the processing space 180.

[0041] The upper container 110 includes a first body 111 , a supply port 118 , and a first accommodation space 112 .

[0042] The first body 111 serves as a body of the upper container 110, and the supply port 118 and the first accommodation space 112 are formed in the first body 111. The first body 111 may include a heat transfer material or may be made of a heat transfer material. In an embodiment, the first body 111 may include stainless steel (SUS) or may be made of stainless steel (SUS).

[0043] The first body 111 includes a central region CR and a peripheral region PR surrounding the central region CR. The supply port 118 and the first receiving space 112 are formed in the central region CR. The peripheral region PR may protrude further toward the processing space 180 than the central region CR. A support member 119 may be installed in the peripheral region PR.

[0044] The supply port 118 may be installed to penetrate the first body 111. The supply port 118 receives the fluid (ie, the supercritical fluid) from the fluid supply unit 300 and transfers the fluid to the first receiving space 112.

[0045] The first receiving space 112 may be formed on the lower surface (or bottom surface) 110B of the first body 111. As shown in the figure, the first receiving space 112 may be recessed inwardly from the lower surface 110B of the first body 111 (or recessed more inwardly than the peripheral area PR). The depth H of the first receiving space 112 may be, for example, 10 mm or more.

[0046] The side surface of the first receiving space 112 may be inclined. That is, the side surface and the upper surface of the first receiving space 112 may have an angle θ less than 90°. The angle θ may be, for example, 10° to 70°.

[0047] The baffle 120 is installed in the first receiving space 112. The baffle 120 diffuses the fluid supplied from the supply port 118 and supplies the fluid to the processing space 180.

[0048] The baffle 120 includes a base 124 and a plurality of perforated plates 122 (i.e., a plate having a plurality of holes). The perforated plates 122 may be fixed by the base 124. The plurality of perforated plates 122 may be stacked on each other. The perforation positions of two adjacent perforated plates in the plurality of perforated plates 122 may be different from each other. That is, when viewed in the vertical direction, the perforation position of the perforated plate 122 installed below is not parallel to the perforation position of another perforated plate 122 installed just above it. Since the perforation positions are not arranged in a row in the vertical direction, the fluid is fully diffused through the first accommodation space 112 and the baffle 120 and then supplied to the substrate W. For example, using a perforated plate 122 having non-overlapping holes in the vertical direction can help to evenly distribute the fluid in the processing space 180.

[0049] The support 119 is mounted on the lower surface 110B of the upper container 110 (i.e., on the lower surface of the peripheral region PR). When the containers 110 and 130 are in the open position (when the upper container 110 and the lower container 130 are spaced apart from each other), the support 119 is configured to support the substrate W. In an embodiment, the support 119 may have an overhanging edge to support the substrate W.

[0050] A sensor 109 for measuring the state of the fluid supplied to the reactor 100 is installed in the upper container 110. The state of the fluid can be, for example, the temperature and / or pressure of the fluid, but is not limited thereto. The sensor 109 is installed on the upper portion of the first body 111 and can be installed around the supply port 118 and / or the supply pipe. The installation position of the sensor 109 can be at a position different from the position shown. Therefore, the sensor 109 can accurately sense the state of the fluid supplied to the reactor 100.

[0051] The lower container 130 includes a second body 131 , a discharge port 138 , and a second accommodation space 132 .

[0052] The second body 131 serves as a body of the lower container 130, and the discharge port 138 and the second accommodation space 132 are formed in the second body 131. The second body 131 may include a heat transfer material or may be made of a heat transfer material. In an embodiment, the second body 131 may include stainless steel (SUS) or may be formed of stainless steel (SUS).

[0053] The exhaust port 138 may be installed to penetrate the second body 131. The exhaust port 138 exhausts the fluid from the processing space 180 to the outside of the processing space 180. The exhaust operation may be controlled by the operation of the exhaust unit 400 connected to the exhaust port 138.

[0054] The second receiving space 132 may be installed on the upper surface of the second body 131. As shown in the figure, the second receiving space 132 may be recessed inward from the upper surface of the second body 131.

[0055] The support plate 150 is installed in the lower container 130 to face the baffle 120. Specifically, the support plate 150 is installed in the second accommodation space 132. When the containers 110 and 130 are changed from the open position to the closed position (in a state where the upper container 110 and the lower container 130 are in contact with each other), the substrate W can be transferred from the support 119 to the support plate 150 and supported by the support plate 150, but the present disclosure is not limited thereto. That is, even when the containers 110 and 130 are in the closed position, the substrate W can be supported by the support 119. When the containers 110 and 130 are in the closed position, the support plate 150 faces the lower surface of the substrate W. Unless otherwise indicated by the context, the term "contact" used herein refers to direct connection (i.e., physical contact).

[0056] The heat source 152 is installed in the support plate 150. The heat source 152 may be, for example, a heater, and may be a pipe through which a high-temperature fluid flows. The temperature controller 200 supplies the high-temperature fluid to the pipe to control the temperature of the support plate 150. The present disclosure is not limited thereto. In an embodiment, when the heat source 152 is a heater having a resistive heating element, the temperature controller 200 may supply power to the heater to control the temperature of the support plate 150.

[0057] When the supercritical process is performed in the processing space 180, the support plate 150 is heated by the heat source 152, whereby the temperature of the substrate W increases. The support plate 150 is controlled to have a higher temperature than the first body 111. In an embodiment, the support plate 150 may be controlled to have a higher temperature than the second body 131. That is, the support plate 150 serves as a hot plate, and the other parts (i.e., the first body 111 and the second body 131) serve as cold walls.

[0058] When a supercritical process is performed in the processing space 180, the support plate 150 is controlled to have a higher temperature than the containers 110 and 130. For example, when a supercritical process is performed in the processing space 180, the support plate 150 may be 150° C. or more and 350° C. or less, and the upper container 110 and / or the lower container 130 may be 35° C. or more and 150° C. or less.

[0059] When the containers 110 and 130 are in the closed position and the supercritical process is performed, the fluid is supplied to the processing space 180 in a supercritical state. In this case, the support plate 150 is heated so that the temperature of the substrate W increases. As the temperature of the substrate W increases, the supercritical process is intensively performed on the substrate W.

[0060] Since the upper container 110 and the lower container 130 are made of a heat transfer material such as SUS, it is easy to heat the containers, but it is difficult to insulate them. When the upper container 110 and the lower container 130 are heated, the temperature of the processing space 180 increases, so that the efficiency of the supercritical process in the processing space 180 is improved, but the exterior and peripheral devices of the upper container 110 and the lower container 130 are inevitably affected by the high temperature.

[0061] Therefore, in the substrate processing apparatus according to some embodiments of the present disclosure, the support plate 150 is heated to 150° C. or higher, and the upper container 110 and the lower container 130 are maintained at a temperature relatively lower than the temperature of the heated support plate 150, thereby minimizing the impact on peripheral devices and at the same time improving the processing efficiency of the substrate W.

[0062] Figure 4 It shows Figure 1 Figure 2 shows a fluid supply unit.

[0063] Reference Figure 4 The fluid supply unit 300 includes a main tank 310 , a condenser 360 , a reservoir 370 , a heater 380 , a plurality of filters 321 , 322 , and 323 , a plurality of valves 351 , 352 , and 354 , and a supply pipe 390 .

[0064] The main tank 310 can store liquefied carbon dioxide (LCO2). The liquefied carbon dioxide is provided to the condenser 360 through the filter 321 and the valve 351. The liquefied carbon dioxide is compressed to a supercritical state when passing through the condenser 360 and the pump 355. The supercritical carbon dioxide is provided to the storage 370 through the filter 322 and the valve 352. The storage 370 can be controlled at an appropriate pressure and temperature, and can be controlled at, for example, about 180 bar and about 80°C, but is not limited thereto. That is, the storage 370 can be controlled to have a critical pressure (7.38Mpa=73.8 bar) and a critical temperature (304.1K=30.95°C) of carbon dioxide.

[0065] The carbon dioxide in a supercritical state stored in the storage 370 is transferred to the reactor 100 through the heater 380 , the filter 323 , and the valve 354 .

[0066] The supply pipe 390 (see region A) connected to the reactor 100 maintains a normal pressure / room temperature state. In an embodiment, the supply pipe 390 can be exposed to room temperature and atmospheric pressure. In addition, in order to avoid safety accidents, when the supercritical process is not performed, the inside of the supply pipe 390 remains free of supercritical fluid. Therefore, when the supercritical process starts, the high temperature / ultra-high pressure fluid supplied from the reservoir 370 may cause heat loss and pressure loss when passing through the supply pipe 390. Therefore, the fluid that generates heat loss and pressure loss may not be able to maintain a supercritical state. That is, the fluid that generates heat loss and pressure loss can be supplied to the reactor 100 in an unstable state mixed with liquid, gas, etc. This unstable state of fluid may reduce the drying capacity, resulting in process defects. The process defects that may occur as described above can be removed in the manner described below.

[0067] Figure 5 is a flowchart illustrating a driving method of a substrate processing apparatus according to some embodiments of the present disclosure.

[0068] Reference Figure 5 , the supercritical fluid is started to be supplied to the reactor 100 (S10). The state of the supercritical fluid is measured by the sensor 109.

[0069] Then, it is checked whether the state of the supercritical fluid satisfies the set conditions (S20).

[0070] When the state of the supercritical fluid satisfies the set condition (see “Yes” of S20 ), the substrate placed in the processing space 180 of the reactor 100 is dried using the supercritical fluid.

[0071] On the other hand, when the state of the supercritical fluid does not satisfy the set condition (see "No" of S20), the supercritical fluid is used to clean the processing space 180 of the reactor 100. For example, when a substrate drying process is performed using a supercritical fluid that does not satisfy the set condition (i.e., an unstable supercritical fluid), process defects may occur, and thus cleaning of the processing space 180 is performed instead of drying the substrate placed in the processing space 180. The processing space 180 of the reactor 100 is cleaned without directly discharging the unstable supercritical fluid, so that substrate contamination caused by particles in the processing space 180 can be avoided.

[0072] In the following, reference will be made to Figures 6 to 9 The cleaning operation of a reactor using a supercritical fluid is described in detail.

[0073] Figures 6 to 8 is an example of a cleaning operation of a reactor using a supercritical fluid. Fig. 9 is a graph showing an example pressure change inside a reactor when a cleaning operation of the reactor is performed using a supercritical fluid.

[0074] like Figure 6 As shown, in a state where the processing space 180 of the reactor 100 is empty, a supercritical fluid is supplied into the processing space 180 to perform a cleaning operation. Since there is no dummy wafer inside the reactor 100, the supercritical fluid does not diffuse to the corner of the processing space 180 of the reactor 100 (see F1). However, even if this method is used, the high-temperature supercritical fluid may increase the temperature of the supply pipe 390 to reach the set temperature when passing through the supply pipe 390. Since this method does not require the operation of inserting / removing a dummy wafer, the overall cleaning operation time can be shortened.

[0075] like Figure 7 As shown, the cleaning operation can be performed in a state where the dummy wafer DW is placed inside the reactor 100. That is, after the dummy wafer DW is placed in the processing space 180, the supercritical fluid is supplied into the processing space 180. When the supercritical fluid is supplied to the processing space 180 of the reactor 100, the supercritical fluid may collide with the dummy wafer DW, and then may diffuse to the corner of the processing space 180 (see F2). Therefore, when this method is used, the temperature of the supply pipe 390 can be sufficiently increased, and the processing space 180 can be sufficiently cleaned.

[0076] like Figure 8 As shown, a dummy wafer DW may be placed inside the reactor 100, and a cleaning liquid CF is coated on the dummy wafer DW. The cleaning liquid CF is used to remove particles, such as carbon components (or photoresist film components) remaining in the processing space 180. In an embodiment, the particles may include carbon and may be generated by patterning of the photoresist film. Since the supercritical fluid is not well mixed with the carbon component, it may be difficult to fully remove the carbon component in the processing space 180 using only the supercritical fluid. Therefore, a cleaning process is performed in a state where the dummy wafer DW coated with the cleaning liquid CF is placed inside the reactor 100, thereby fully removing the carbon component in the processing space 180.

[0077] In addition, when the supercritical fluid is supplied to the processing space 180 of the reactor 100, the supercritical fluid collides with the dummy wafer DW and can be diffused to the corner of the processing space 180 (see F3). Therefore, the temperature of the supply pipe 390 can be sufficiently increased, and the processing space 180 can be sufficiently cleaned.

[0078] Meanwhile, even if the supercritical fluid is discharged to the exhaust unit 400 through the processing space 180, the effect of cleaning the processing space 180 can be obtained. In addition, pressurization and decompression can be repeated multiple times inside the reactor 100 so that the effect of cleaning the processing space 180 can be maximized. Fig. 9 Describe the cleaning method.

[0079] Reference Fig. 9 , in the closed position of the reactor 100 (see Figure 3 ), the unstable supercritical fluid is supplied to the reactor 100 through the supply pipe 390. The pressure in the reactor 100 is increased to the first pressure P1 (see step S1). That is, the supercritical fluid can be supplied until the supercritical fluid in the processing space 180 reaches the saturated vapor pressure or critical pressure. After the fluid in the processing space 180 reaches the saturated vapor pressure, the temperature in the processing space 180 can be increased to a temperature higher than the critical temperature of the fluid in the processing space 180. Therefore, the fluid in the processing space 180 reaches a supercritical state.

[0080] Then, the supply flow rate of the supercritical fluid supplied to the processing space 180 is adjusted so that the pressure of the processing space 180 is repeatedly increased and decreased within a predetermined range (see step S2). That is, the decompression process of decompressing the pressure of the processing space 180 from the first pressure P1 to the second pressure P2 and the pressure increase process of increasing the pressure in the processing space 180 from the second pressure P2 to the first pressure P1 are repeatedly performed. In this way, the interior of the processing space 180 is cleaned by repeatedly performing the decompression / pressurization process. The first pressure P1 may be, for example, 140 bar, and the second pressure P2 may be, for example, 100 bar, but the present disclosure is not limited thereto.

[0081] Next, the pressure in the processing space 180 is decompressed from the second pressure P2 to the third pressure P3 (see S3 ).

[0082] Then, the pressure in the processing space 180 is depressurized from the third pressure P3 to normal pressure (see step S4). In step S4, normal pressure is an example, and the pressure may be depressurized from the third pressure P3 to pressure other than normal pressure.

[0083] The speed of reducing the pressure from the second pressure P2 to the third pressure P3 may be slower than the speed of reducing the pressure from the third pressure P3 to normal pressure. Therefore, reducing the pressure from the second pressure P2 to the third pressure P3 may be a low-speed discharge, and reducing the pressure from the third pressure P3 to normal pressure may be a high-speed discharge.

[0084] Fig.10 is a flowchart showing a driving method of a substrate processing device according to some embodiments of the present disclosure. For ease of description, the following description will be based on the reference Figures 5 to 9 The differences between those described.

[0085] Reference Fig.10 , when the state of the supercritical fluid does not meet the set conditions (see Figure 5If the cleaning method is selected in step S20 ("No"), a cleaning method is selected (S41). The cleaning method can be selected using software or the like. In an embodiment, the operator can select the cleaning method.

[0086] There may be a variety of cleaning methods, but in some embodiments of the present disclosure, the following three cases are taken as examples.

[0087] According to the first case (see AVC1), if Figure 6 As shown, the processing space 180 is cleaned in a state where the processing space 180 is empty (S42).

[0088] According to the second case (see AVC2), if Figure 7 As shown, in a state where the dummy wafer DW is placed in the processing space 180, the processing space 180 is cleaned (S43).

[0089] According to the third case (see AVC3), if Figure 8 As shown, in a state where the dummy wafer DW coated with the cleaning liquid is placed in the processing space 180, the processing space 180 is cleaned (S44).

[0090] Fig.11 is a block diagram showing a substrate processing apparatus according to some embodiments of the present disclosure. For ease of description, the following description will be based on the reference Figures 1 to 10 The differences between those described.

[0091] Reference Fig.11 The substrate on which the photoresist film subjected to the exposure process is formed is transferred to the substrate processing apparatus 2. In the substrate processing apparatus 2, a developing process using a developing solution, a drying process using a supercritical fluid, and a baking process are sequentially performed.

[0092] The substrate processing apparatus according to some embodiments of the present disclosure includes a loading port 1100, an index module 1200, and a processing module 1300. The loading port 1100, the index module 1200, and the processing module 1300 may be disposed along a first direction X.

[0093] The loading port 1100 includes a loading platform (refer to LP1 to LP4) provided with a container for accommodating a plurality of substrates. The plurality of substrates may be substrates that have been subjected to an exposure process. The container may be, for example, a front opening unified box (FOUP), but is not limited thereto. The plurality of loading platforms may be arranged along the second direction Y. Fig.11 In the embodiment, four mounting tables are installed by way of example.

[0094] The index module 1200 is disposed between the load port 1100 and the process module 1300. For example, the index module 1200 includes a track installed in the index chamber 210 and an index robot moving along the track. The index robot includes an arm and a hand to pick up a substrate located on the load port 1100 and transfer the substrate to the buffer chamber 1305.

[0095] The processing module 1300 includes a buffer chamber (WCP) 1305, a transfer chamber (MTR) 1400, a first processing chamber (PU1 or ESU) 1310, a second processing chamber (PU2 or DSV) 1320, a third processing chamber (PU3 or DSV) 1330, a fourth processing chamber (PU4 or BAKE) 1340, a first control box (CTR1) 1350 and a second control box (CTR2) 1351.

[0096] The buffer chamber 1305 temporarily stores substrates transferred by the index robot of the index module 1200. The substrates in the buffer chamber 1305 may be adjusted to a preset temperature. In addition, at least one of the process chambers 1310, 1320, 1330, and 1340 may temporarily store substrates in which processing is completed.

[0097] The transfer chamber 1400 is disposed to extend along the first direction X. A guide rail and a transfer robot are disposed in the transfer chamber 1400. In an embodiment, the transfer robot moves along the guide rail.

[0098] The first process chamber 1310, the first control box 1350, and the second process chamber 1320 may be sequentially disposed around the transfer chamber 1400 on one side in the second direction Y. The fourth process chamber 1340 and the third process chamber 1330 may be sequentially disposed around the transfer chamber 1400 on the other side in the second direction Y. For example, the transfer chamber 1400 is disposed in a space between the first process chamber 1310 and the fourth process chamber 1340 and in a space between the second process chamber 1320 and the third process chamber 1330.

[0099] The first processing chamber 1310 supplies a developer to the substrate to perform a developing process. A photoresist film subjected to an exposure process may be formed on the substrate. The developer is a negative photoresist developer and may be, for example, n-butyl acetate (nBA), but is not limited thereto.

[0100] The second process chamber 1320 dries the substrate by using a supercritical fluid, that is, removes the developer remaining on the substrate W by using the supercritical fluid.

[0101] The third process chamber 1330 may be the same type of chamber as the second process chamber 1320. That is, the third process chamber 1330 dries the substrate by using a supercritical fluid. The third process chamber 1330 may be disposed to face at least a portion of the second process chamber 1320.

[0102] Figures 1 to 4 The device described in Figures 5 to 10 The method described in may be applied to each of the second process chamber 1320 and the third process chamber 1330 .

[0103] The fourth process chamber 1340 bakes the substrate dried in the second process chamber 1320 or the third process chamber 1330. The fourth process chamber 1340 may be disposed to face at least a portion of the first process chamber 1310.

[0104] The first control box 1350 is a space where a controller (ie, a computing device) for controlling a plurality of process chambers (eg, 1310 and 1320) is installed.

[0105] The second control box 1351 is a space where a controller (ie, a computing device) for controlling a plurality of process chambers (eg, 1330 and 1340) is installed.

[0106] Hereinafter, operations of the substrate processing apparatus according to some embodiments of the present disclosure will be described.

[0107] A container containing a substrate subjected to an exposure process is placed on a stage of the load port 1100. An index robot of the index module 1200 picks up the substrate and transfers the substrate to the buffer chamber 1305.

[0108] The transfer robot of the transfer chamber 1400 picks up the substrate from the buffer chamber 1305 and transfers the substrate to the first process chamber 1310. The substrate is developed by a developing solution in the first process chamber 1310.

[0109] The transfer robot of the transfer chamber 1400 transfers the substrate from the first process chamber 1310 to the second process chamber 1320 or the third process chamber 1330. Specifically, the substrate is transferred to the second process chamber 1320 or the third process chamber 1330 in a state where the developer supplied from the first process chamber 1310 remains on the substrate.

[0110] In the second process chamber 1320 or the third process chamber 1330, the substrate is dried by the supercritical fluid. The transfer robot of the transfer chamber 1400 transfers the dried substrate from the second process chamber 1320 or the third process chamber 1330 to the fourth process chamber 1340. Figures 1 to 10 As described above, before or after drying the substrate in the second process chamber 1320 or the third process chamber 1330, the inside of the reactor may be cleaned by using an unstable supercritical fluid.

[0111] In the fourth process chamber 1340 , the substrate is baked. The transfer robot of the transfer chamber 1400 transfers the baked substrate from the fourth process chamber 1340 to the buffer chamber 1305 .

[0112] In the buffer chamber 1305, the temperature of the substrate is controlled.

[0113] The index robot of the index module 1200 picks up the substrate from the buffer chamber 1305 and transfers the substrate to the container of the load port 1100 .

[0114] Fig.12 is a flowchart illustrating a driving method of a substrate processing apparatus according to some embodiments of the present disclosure.

[0115] Reference Fig.11 and Fig.12 , a photoresist film PR is coated on a substrate (S410).

[0116] Then, the photoresist film is exposed using EUV (S420).

[0117] Then, the exposed substrate is transferred to the first process chamber ESU (S430).

[0118] Subsequently, it is checked whether the substrate is a first processing substrate (S440). In this case, the first processing substrate corresponds to a substrate transferred for initial processing among a plurality of substrates on which a developer treatment process is to be performed. In an embodiment, the first processing substrate may be a substrate to be processed for initial processing when the substrate processing apparatus enters an idle period and then starts a drying process again.

[0119] When the substrate is a first process substrate (Yes in S440), the substrate transferred into the first process chamber ESU is not processed using a developing solution but waits in the first process chamber ESU (S450).

[0120] Subsequently, it is checked whether the state of the supercritical fluid supplied to the second process chamber or the third process chamber DSV satisfies a set condition, so as to determine whether to clean the process space of the second process chamber or the third process chamber DSV.

[0121] Specifically, the pressure of the supercritical fluid supplied to the second process chamber or the third process chamber DSV is measured (S461). The pressure of the supercritical fluid can be measured in the supply pipe of the reactor connected to the second process chamber or the third process chamber DSV, or the pressure inside the reactor can be measured. The pressure of the supercritical fluid can be inferred by the pressure measured as above. In an embodiment, the measured pressure can represent the pressure of the supercritical fluid supplied to the second process chamber or the third process chamber DSV.

[0122] It is checked whether the measured pressure is the same as the set pressure (ie, whether the measured pressure is within the set pressure range) (S462).

[0123] When the measured pressure is different from the set pressure (No of S462), the reactor of the second process chamber or the third process chamber DSV is cleaned by using an unstable supercritical fluid (S463). The cleaning method may be Figures 6 to 8 One of the methods.

[0124] When the measured pressure is the same as the set pressure ("Yes" of S462), the temperature of the supercritical fluid supplied to the second process chamber or the third process chamber DSV is measured (S464). The temperature can be measured in the supply pipe of the reactor connected to the second process chamber or the third process chamber DSV, or the temperature inside the reactor can be measured. The temperature of the supercritical fluid can be inferred by the temperature measured as above. In an embodiment, the measured temperature can represent the temperature of the supercritical fluid supplied to the second process chamber or the third process chamber DSV.

[0125] It is checked whether the measured temperature is the same as the set temperature (ie, whether the measured temperature is within the set temperature range) (S465).

[0126] When the measured temperature is different from the set temperature ("No" of S465), the reactor of the second process chamber or the third process chamber DSV is cleaned by using an unstable supercritical fluid (S466). The cleaning method may be Figures 6 to 8 One of the methods.

[0127] When the measured temperature is the same as the set temperature ("Yes" of S465), since the state of the supplied supercritical fluid satisfies the set condition, the substrate waiting in the first process chamber ESU is processed with the developer (S470). In an embodiment, in response to the state of the supercritical fluid being identified as satisfying the set condition, the substrate in the first process chamber ESU may be processed with the developer (S470).

[0128] When the substrate is completely treated with the developer, the substrate is transferred from the first processing chamber ESU to the second processing chamber or the third processing chamber DSV. The substrate can be transferred in a state where the developer remains on the substrate. In the second processing chamber or the third processing chamber DSV, the substrate is dried by replacing the developer with a supercritical fluid using a supercritical fluid that meets the set conditions (S480).

[0129] Then, it is checked whether the dried substrate is the last processed substrate (S510). In this case, the last processed substrate refers to the substrate that is last transferred among the multiple substrates to be processed by the developer. In an embodiment, the last processed substrate may mean that there is no substrate waiting to be processed with the developer in the first processing chamber ESU.

[0130] When the substrate is not the last processed substrate (No of S510), the substrate is transferred to the fourth process chamber BAKE and a post-bake process is performed (S520).

[0131] The transfer chamber MTR transfers the baked substrate from the fourth process chamber BAKE to the buffer chamber WCP. The substrate is cooled in the buffer chamber WCP (S530).

[0132] Meanwhile, when the substrate is not the first process substrate (for example, when the substrate is the second process substrate) (No of S440), the substrate (i.e., the second process substrate) transferred to the first process chamber ESU is treated with a developer (S490). In addition, the reactor of the second process chamber or the third process chamber DSV is cleaned. In this case, the developer treatment process and the cleaning process may be performed simultaneously.

[0133] When the substrate is completely processed with the developer, the substrate is transferred from the first process chamber ESU to the second process chamber or the third process chamber DSV so that the developer is replaced with the supercritical fluid and dried (S480). The subsequent steps are the same as above.

[0134] When the substrate is the last processed substrate (Yes of S510), the substrate is transferred to the fourth process chamber BAKE to perform post-bake, and the process space 180 in the second process chamber or the third process chamber DSV is cleaned (S540). The cleaning method may be Figures 6 to 8 Since the substrate is the last processed substrate, the second process chamber or the third process chamber DSV is not used temporarily. Therefore, a cleaning operation is performed to remove particles remaining in the second process chamber or the third process chamber DSV.

[0135] In this case, since the cleaning in steps S463 and S466 is performed before the drying process starts, the cleaning is pre-process cleaning (pre-AVC). Since the cleaning in step S490 is performed between the pre-drying process and the subsequent drying process, the cleaning is inter-process cleaning (intermediate AVC). Since the cleaning in step S540 is performed after all drying processes are completed, the cleaning is post-process cleaning (post-AVC).

[0136] All of the pre-process cleaning, inter-process cleaning, and post-process cleaning may be the same type of cleaning. For example, the cleaning may be performed in a state where a dummy wafer is placed in the processing space 180 .

[0137] In an embodiment, at least two of the pre-process cleaning, the inter-process cleaning, or the post-process cleaning may be different types of cleaning. For example, the pre-process cleaning and the post-process cleaning may be performed in a state where a dummy wafer is placed, and the inter-process cleaning may be performed in a state where the processing space is empty (i.e., there is no dummy wafer in the processing space). Since the pre-process cleaning should sufficiently increase the temperature of the supply pipe to reach a set temperature or higher, and the post-process cleaning should sufficiently remove particles in the processing space, the pre-process cleaning and the post-process cleaning may be performed in a state where a dummy wafer is placed. On the other hand, since the inter-process cleaning should be performed faster to prevent the entire process time from being delayed, the cleaning may be performed in a state where the processing space is empty.

[0138] Fig.13 is a diagram showing a driving method of a substrate processing apparatus according to some embodiments of the present disclosure. Fig.13 In the sequence listed in Fig.11 The process is performed in the second process chamber or the third process chamber DSV reactor shown.

[0139] Reference Fig.13 , start supplying supercritical fluid, and perform pre-process cleaning (pre-AVC) on the processing space of the reactor (S610). The pre-process cleaning may be cleaning AVC2 performed in a state where a dummy wafer is placed in the processing space.

[0140] Subsequently, a drying process (S620) of the first substrate (developer-treated substrate) WF1 is performed.

[0141] Then, inter-process cleaning (intermediate AVC) is performed (S611). The inter-process cleaning may be cleaning AVC2 performed in a state where a dummy wafer is placed in the processing space.

[0142] Next, a drying process of the second substrate (the substrate treated with the developing solution) WF2 is performed (S621).

[0143] Subsequently, inter-process cleaning (intermediate AVC) is performed (S612). The inter-process cleaning may be cleaning AVC2 performed in a state where a dummy wafer is placed in the processing space.

[0144] Subsequently, a drying process (S629) of the last substrate (the substrate treated with the developing solution) WFn (n is a natural number greater than or equal to 3) is performed.

[0145] Subsequently, post-process cleaning (post-AVC) is performed (S630). The post-process cleaning may be cleaning AVC2 performed in a state where the dummy wafer is placed in the processing space.

[0146] Fig.14is a diagram showing a driving method of a substrate processing apparatus according to some embodiments of the present disclosure. Fig.14 In the order listed in Fig.11 The process is performed in the second process chamber or the third process chamber DSV reactor shown.

[0147] Reference Fig.14 , the drying process (S629) of the last substrate (substrate treated with the developer) WFn is performed. That is, there is no substrate waiting to be treated with the developer in the first processing chamber ESU. Therefore, the second processing chamber or the third processing chamber DSV is temporarily not used. That is, the second processing chamber or the third processing chamber DSV enters an idle period.

[0148] Subsequently, post-process cleaning (post-AVC) is performed (S630). The post-process cleaning may be cleaning AVC2 performed in a state where the dummy wafer is placed in the processing space.

[0149] In the idle period, at least one cleaning may be performed. For example, when a preset time "ta" passes in the idle period, the interval cleaning steps S640, S641, and S642 may be repeated. In this case, the interval cleaning steps S640, S641, and S642 may be cleaning AVC1 in a state where the processing space is empty.

[0150] When performing the interval cleaning steps S640, S641 and S642, the supply pipe ( Figure 1 The temperature of the drying process is maintained within the set temperature range, and particles in the processing space inside the reactor 100 are removed. Therefore, when the idle period ends, a new drying process can be started quickly and stably.

[0151] The processing time t2 of the interval cleaning step may be shorter than the processing time t1 of the post-process cleaning (post-AVC).

[0152] Although the embodiments of the present disclosure have been described with reference to the accompanying drawings, it is obvious to those skilled in the art that the present disclosure can be manufactured in various forms without being limited to the above embodiments, and can be embodied in other specific forms without departing from the technical spirit and basic features of the present disclosure. Therefore, the above embodiments should be regarded as illustrative rather than restrictive in all aspects.

[0153] At the end of the detailed description, those skilled in the art will appreciate that many changes and modifications may be made to the embodiments without departing substantially from the principles of the present invention. Therefore, the embodiments of the present invention disclosed are intended only for general and descriptive purposes, and not for purposes of limitation.

Claims

1. A substrate processing device, comprising: a reactor having a processing space formed therein; a fluid supply unit for supplying a supercritical fluid into the processing space of the reactor; as well as a controller configured to control the reactor and the fluid supply unit, Wherein, the controller controls the reactor and the fluid supply unit to perform one of the following in response to whether the state of the supercritical fluid supplied to the reactor satisfies a set condition: cleaning the processing space by using the supercritical fluid, and drying a substrate placed in the processing space by using the supercritical fluid.

2. The substrate processing apparatus according to claim 1, in, The controller is configured to control the reactor and the fluid supply unit so that, when the process space is cleaned by using the supercritical fluid, a dummy wafer is placed in the process space and then the supercritical fluid is supplied into the process space.

3. The substrate processing apparatus according to claim 2, in, The dummy wafer is coated with a cleaning liquid, and the cleaning liquid is used to remove particles remaining in the processing space.

4. The substrate processing apparatus according to claim 3, in, The particles include carbon.

5. The substrate processing apparatus according to claim 1, in, The controller is configured to control the reactor and the fluid supply unit so that the supercritical fluid is supplied into the processing space without any dummy wafer present when the processing space is cleaned by using the supercritical fluid.

6. The substrate processing apparatus according to claim 1, in, The controller is configured to control the reactor and the fluid supply unit so that during cleaning of the processing space, The supercritical fluid in the processing space is being depleted; and The pressure of the processing space reaches a preset pressure, and then the pressure of the processing space is repeatedly increased and decreased within a range of the preset pressure.

7. The substrate processing apparatus according to claim 1, in, The controller is configured to control the reactor and the fluid supply unit so that when the substrate placed in the processing space is dried by using the supercritical fluid, the substrate with the developer remaining thereon is placed in the processing space, and the supercritical fluid is supplied into the processing space to remove the developer remaining on the substrate.

8. The substrate processing apparatus according to claim 1, in, The set conditions include a set temperature and a set pressure for maintaining the supercritical fluid in a supercritical state, Wherein, the fluid supply unit comprises: a storage device for storing the supercritical fluid, and a supply tube connecting the reservoir to the reactor, and At least a portion of the supply pipe is exposed to a temperature lower than the set temperature and a pressure lower than the set pressure.

9. A substrate processing device, comprising: a first chamber, in which a developer treatment process is performed; a second chamber in which a drying process is performed using a supercritical fluid; as well as a controller configured to control the first chamber and the second chamber, Wherein, the controller performs the following operations: controlling a first substrate so that the first substrate is placed in the first chamber, performing first cleaning of the processing space of the second chamber by using a supercritical fluid having a first state that does not satisfy a set condition, performing a developer treatment process on the first substrate placed in the first chamber, transferring the first substrate having been subjected to the developer treatment process from the first chamber to the second chamber, and A first drying process is performed on the first substrate by using a supercritical fluid having a second state satisfying the set condition.

10. The substrate processing apparatus according to claim 9, in, The controller controls a second substrate so that the second substrate is placed in the first chamber after transferring the first substrate from the first chamber to the second chamber, and performs second cleaning on the processing space of the second chamber when the developer treatment process is performed on the second substrate in the first chamber.

11. The substrate processing apparatus according to claim 10, in, The controller performs the following operations: transferring the second substrate having been subjected to the developer treatment process from the first chamber to the second chamber, performing a second drying process on the second substrate by using the supercritical fluid having the second state satisfying the set condition, After performing the second drying process on the second substrate, transferring the second substrate from the second chamber to a third chamber, and A third cleaning is performed on the processing space of the second chamber.

12. The substrate processing apparatus according to claim 11, in, The first cleaning to the third cleaning are performed in a state where a dummy wafer exists in the processing space.

13. The substrate processing apparatus according to claim 11, in, In response to the second drying process performed on the second substrate being completed and no substrate being placed in the first chamber, the controller controls the second chamber to enter an idle period.

14. The substrate processing apparatus according to claim 9, in, The controller performs at least one fourth cleaning of the processing space of the second chamber by using the supercritical fluid having the first state while the second chamber is in an idle period.

15. The substrate processing apparatus according to claim 14, in, The first cleaning is performed in a state where a dummy wafer exists in the processing space, and The at least one fourth cleaning is performed in a state where no dummy wafer exists in the processing space.

16. The substrate processing apparatus according to claim 15, in, The at least one fourth cleaning is performed for a shorter time than the first cleaning.

17. The substrate processing apparatus according to claim 15, in, A cleaning liquid for removing particles remaining in the processing space of the second chamber is coated on the dummy wafer.

18. The substrate processing apparatus according to claim 9, in, When the first substrate, on which the developer treatment process has been performed, is transferred from the first chamber to the second chamber, the developer remains on the first substrate.

19. The substrate processing apparatus according to claim 9, in, The set condition includes at least one of a set temperature and a set pressure for maintaining a supercritical state of the supercritical fluid.

20. A driving method for a substrate processing device, the driving method comprising: placing a first substrate in a first chamber; performing a first cleaning of the processing space of the second chamber by using a supercritical fluid, wherein the supercritical fluid has a first state that does not satisfy a set condition; After the supercritical fluid has a second state satisfying the set condition, performing a developer treatment process on the first substrate placed in the first chamber; transferring the first substrate, on which the developer treatment process has been performed, from the first chamber to the second chamber; and A drying process is performed on the first substrate by using the supercritical fluid having the second state satisfying the set condition.

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