Simplified circuit design method and system for high-efficiency EMC suppression rectifier diode

Abstract

The present invention relates to the field of electromagnetic compatibility and discloses a simplified circuit design method and system for a high-performance EMC suppression rectifier diode. The method comprises: identifying the interference frequency range of the diode application scenario, determining the passive and active components of the diode application scenario, and establishing a passive filter for the diode application scenario; establishing an active filter for the diode application scenario, combining the passive and active filters to obtain a multi-stage filter; establishing a protection circuit for the multi-stage filter and the target rectifier diode, and constructing a diode integrated circuit comprising the protection circuit, the multi-stage filter, and the target rectifier diode; simulating the diode integrated circuit to obtain EMC suppression data, calculating circuit parameter values ​​of the diode integrated circuit, and performing circuit optimization of the diode integrated circuit to obtain the target integrated circuit. The present invention can improve the EMC suppression effect of the rectifier diode.

Description

Technical Field

[0001] The invention relates to a simplified circuit design method and system for a high-efficiency EMC suppression rectifier diode, belonging to the field of electromagnetic compatibility. Background Art

[0002] The simplified circuit design of rectifier diodes means reducing the complexity and cost of the circuit while improving the reliability and performance of the circuit by reducing the number of circuit components, simplifying the circuit structure, optimizing circuit parameters, etc., while ensuring the rectification function. The simplified circuit design of rectifier diodes can make the circuit design more concise, efficient and economical.

[0003] Traditional rectifier diode circuit designs typically use a basic bridge rectifier circuit with large filter capacitors and inductors. While this approach can achieve basic rectification, it is complex, requires many components, and is prone to circuit conflicts, leading to unstable EMC suppression. Summary of the Invention

[0004] The present invention provides a simplified circuit design method and system for a high-efficiency EMC suppression rectifier diode, the main purpose of which is to improve the accuracy of security authentication while reducing the workload of path detection.

[0005] To achieve the above objectives, the present invention provides a simplified circuit design method for a high-efficiency EMC suppression rectifier diode, comprising:

[0006] Determine a diode application scenario and its application scenario characteristics, analyze the EMC requirements of the diode application scenario based on the application scenario characteristics, and determine a rectifier diode for the diode application scenario based on the EMC requirements, identify a low reverse recovery time of the rectifier diode, and when the low reverse recovery time meets a preset low reverse recovery standard time, use the rectifier diode as a target rectifier diode for the diode application scenario;

[0007] Based on the EMC requirements, an interference frequency range of the diode application scenario is identified, passive components and active components of the diode application scenario are determined according to the interference frequency range, and a passive filter of the diode application scenario is established according to the passive components;

[0008] Based on the active element, an active filter for the diode application scenario is established, and the passive filter and the active filter are combined to obtain a multi-stage filter;

[0009] Establishing a protection circuit for the multi-stage filter and the target rectifier diode, and constructing a diode integrated circuit for the protection circuit, the multi-stage filter, and the target rectifier diode;

[0010] The diode integrated circuit is simulated to obtain EMC suppression data, circuit parameter values ​​of the diode integrated circuit are calculated according to the EMC suppression data, and circuit optimization of the diode integrated circuit is performed based on the circuit parameters to obtain a target integrated circuit.

[0011] Optionally, analyzing the EMC requirements of the diode application scenario according to the application scenario characteristics includes:

[0012] Analyze potential electromagnetic interference sources of the diode application scenario based on the application scenario characteristics;

[0013] determining a propagation path of the potential electromagnetic interference source;

[0014] Defining sensitive components of the diode application scenario according to the propagation path, and analyzing sensitive component characteristics of the sensitive components;

[0015] Analyzing the anti-interference capability of the sensitive component according to the characteristics of the sensitive component;

[0016] Based on the anti-interference capability, the EMC requirements of the diode application scenario are determined.

[0017] Optionally, the identifying an interference frequency range of the diode application scenario based on the EMC requirement includes:

[0018] According to the EMC requirements, identify the working principle and interference type of potential electromagnetic interference sources corresponding to the diode application scenario;

[0019] Collecting the simulated interference signal of the potential electromagnetic interference source based on the working principle and interference type;

[0020] Calculating the power spectral density of the simulated interference signal;

[0021] defining the harmonic order of the simulated interference signal;

[0022] Based on the harmonic order, the harmonic frequency of the simulated interference signal is calculated using the following formula:

[0023] f n =nf fund

[0024] Among them, f n Indicates the harmonic frequency of the analog interference signal, n indicates the harmonic number of the analog interference signal, f fund Indicates the fundamental frequency of the analog interference signal;

[0025] The interference frequency range of the potential electromagnetic interference source is determined by using the power spectrum density and the harmonic frequency.

[0026] Optionally, the calculating the power spectral density of the simulated interference signal includes:

[0027] defining a signal frequency of the simulated interference signal;

[0028] Converting the analog interference signal into a frequency domain interference signal according to the signal frequency;

[0029] According to the signal frequency, the power spectrum density of the frequency domain interference signal is calculated using the following formula:

[0030]

[0031] Where P(f) represents the power spectral density, represents the frequency domain interference signal, f(t) represents the analog interference signal, j represents the imaginary unit, π represents the circumference ratio, f represents the signal frequency, t represents the time, and e represents the natural constant.

[0032] Optionally, establishing a passive filter for the diode application scenario based on the passive component includes:

[0033] Determine the filtering requirements of the diode application scenario;

[0034] Based on the filtering requirements, determining a filter type for the diode application scenario, and analyzing a cutoff frequency and bandwidth for the diode application scenario according to the filter type;

[0035] Defining the required insertion loss and filter steepness of the filter for the diode application scenario through the cutoff frequency and bandwidth;

[0036] Defining the filter order of the diode application scenario according to the required insertion loss and filter steepness of the filter;

[0037] Calculating the component values ​​of the passive components by using the filter design formula corresponding to the filter order;

[0038] Based on the component values, construct a frequency response graph of the diode application scenario;

[0039] Establishing a passive filter circuit for the diode application scenario through the frequency response diagram;

[0040] According to the passive filter circuit, a passive filter for the diode application scenario is constructed.

[0041] Optionally, the passive filter and the active filter are combined to obtain a multi-stage filter, comprising:

[0042] Determining a cascade connection mode of the passive filter and the active filter;

[0043] According to the cascade mode, the passive filter and the active filter are subjected to circuit simulation fusion to obtain a simulation fusion circuit;

[0044] Calculating compatible parameters of the simulation fusion circuit;

[0045] When the compatibility parameter meets the preset compatibility standard, calculating the filtering performance of the simulation fusion circuit;

[0046] When the filtering performance meets the filtering performance standard, the passive filter and the active filter are combined according to the simulation fusion circuit to obtain the multi-stage filter.

[0047] Optionally, establishing a protection circuit for the multi-stage filter and the target rectifier diode includes:

[0048] analyzing failure modes of the multi-stage filter and the target rectifier diode;

[0049] determining protection elements of the multi-stage filter and the target rectifier diode according to the fault mode;

[0050] Mark the connection mode and component position of the protection component;

[0051] Establishing a circuit schematic diagram of the protection element according to the connection mode and element positions;

[0052] Calculating a risk factor of the circuit schematic;

[0053] When the risk coefficient meets a preset risk threshold, a protection circuit for the multi-stage filter and the target rectifier diode is constructed according to the circuit schematic.

[0054] Optionally, calculating the risk coefficient of the circuit schematic includes:

[0055] Constructing a fault tree of the circuit schematic, wherein the fault tree includes a top event and a bottom event;

[0056] Calculating the top event probability of the top event;

[0057] Analyzing the bottom event probability of the bottom event by using the top event probability;

[0058] Based on the top event probability and the bottom event probability, the risk coefficient of the circuit schematic is calculated using the following formula:

[0059] RC=1-π(1-P(Bi))*IE*CE

[0060] Where RC represents the risk coefficient of the circuit schematic, 1-π(1-P(Bi)) represents the probability of the bottom event, P(Bi) represents the probability of the top event, Bi represents the top event, IE represents the fault impact of the top event, CE represents the complexity of the circuit schematic, and π represents the product of the probabilities of the bottom events.

[0061] Optionally, calculating a circuit parameter value of the diode integrated circuit according to the EMC suppression data includes:

[0062] determining key circuit parameters of the diode integrated circuit based on the EMC suppression data;

[0063] calculating parameter sensitivities of the key circuit parameters;

[0064] Defining EMC suppression parameter indicators of the diode integrated circuit;

[0065] Calculating circuit parameter values ​​of the diode integrated circuit according to the EMC suppression parameter index and the parameter sensitivity.

[0066] In order to solve the above problems, the present invention also provides a simplified circuit design system for a high-efficiency EMC suppression rectifier diode, the system comprising:

[0067] a rectifier diode determination module, configured to determine a diode application scenario and its application scenario characteristics, analyze the EMC requirements of the diode application scenario based on the application scenario characteristics, determine a rectifier diode for the diode application scenario based on the EMC requirements, identify a low reverse recovery time of the rectifier diode, and use the rectifier diode as a target rectifier diode for the diode application scenario when the low reverse recovery time meets a preset low reverse recovery standard time;

[0068] A passive filter construction module is used to identify the interference frequency range of the diode application scenario based on the EMC requirements, determine the passive components and active components of the diode application scenario according to the interference frequency range, and establish a passive filter for the diode application scenario based on the passive components;

[0069] A multi-stage filter construction module, configured to establish an active filter for the diode application scenario based on the active element, and to combine the passive filter and the active filter to obtain a multi-stage filter;

[0070] an integrated circuit construction module, configured to establish a protection circuit for the multi-stage filter and the target rectifier diode, and to construct a diode integrated circuit for the protection circuit, the multi-stage filter, and the target rectifier diode;

[0071] The integrated circuit optimization module is used to simulate the diode integrated circuit to obtain EMC suppression data, calculate circuit parameter values ​​of the diode integrated circuit based on the EMC suppression data, and perform circuit optimization of the diode integrated circuit based on the circuit parameters to obtain a target integrated circuit.

[0072] Compared with the problems described in the background technology, firstly, through the precise analysis of the diode application scenarios and the in-depth understanding of the EMC requirements, a rectifier diode with a low reverse recovery time is selected, which not only improves the rectification efficiency, but also reduces the switching loss, thereby improving the energy efficiency and thermal stability of the entire circuit. Secondly, by identifying the interference frequency range and determining the passive components and active components accordingly, a passive and active filter is constructed. The combination of the two forms a multi-stage filter, which greatly improves the circuit's ability to suppress electromagnetic interference. This multi-stage filter design effectively reduces conducted and radiated interference, ensuring the reliable operation of the circuit in a complex electromagnetic environment. In addition, the protection circuit established is for the entire The rectifier diodes and multi-stage filters provide additional safety features, preventing damage caused by abnormal conditions such as overvoltage and overcurrent, extending the circuit's service life and reducing maintenance costs. The EMC suppression data obtained during the simulation process provides a basis for the precise calculation of circuit parameters, making circuit design more scientific and reasonable. The calculation and optimization of circuit parameter values ​​based on this data further improves circuit performance, ensuring that the circuit meets EMC standards while achieving optimal operating conditions. Ultimately, the diode integrated circuit obtained through circuit optimization not only possesses excellent EMC performance, but also maintains efficient energy conversion and stable signal processing capabilities. Therefore, the present invention can improve the EMC suppression effect of the rectifier diode. BRIEF DESCRIPTION OF THE DRAWINGS

[0073] Figure 1 A schematic flow chart of a simplified circuit design method for a high-efficiency EMC suppression rectifier diode provided by one embodiment of the present invention;

[0074] Figure 2 A schematic diagram of a module for implementing a simplified circuit design method for a high-efficiency EMC suppression rectifier diode according to an embodiment of the present invention.

[0075] The purpose, features and advantages of the present invention will be further described with reference to the accompanying drawings and in conjunction with the embodiments. DETAILED DESCRIPTION

[0076] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0077] The present invention provides a simplified circuit design method for a high-efficiency EMC suppression rectifier diode. This simplified circuit design method for a high-efficiency EMC suppression rectifier diode can be executed by at least one electronic device, such as a server or a terminal, that can be configured to execute the method provided by the present invention. In other words, this simplified circuit design method for a high-efficiency EMC suppression rectifier diode can be executed by software or hardware installed on a terminal or server device. The server device can include, but is not limited to, a single server, a server cluster, a cloud server, or a cloud server cluster.

[0078] Example 1:

[0079] Reference Figure 1 FIG. 1 is a flow chart of a simplified circuit design method for a high-efficiency EMC suppression rectifier diode according to an embodiment of the present invention. In this embodiment, the simplified circuit design method for a high-efficiency EMC suppression rectifier diode includes:

[0080] S1. Determine the diode application scenario and its application scenario characteristics, analyze the EMC requirements of the diode application scenario according to the application scenario characteristics, and determine the rectifier diode for the diode application scenario based on the EMC requirements, identify the low reverse recovery time of the rectifier diode, and when the low reverse recovery time meets the preset low reverse recovery standard time, use the rectifier diode as the target rectifier diode for the diode application scenario.

[0081] It should be explained that the diode application scenario refers to the scenario in which the rectifier diode is used under a switching power supply to suppress electromagnetic interference, wherein the switching power supply refers to an efficient power conversion device, which adjusts voltage and current by quickly switching electronic components (such as transistors), thereby achieving efficient conversion of electrical energy. Switching power supplies are used in various electronic devices, such as computers, communication equipment, household appliances, and industrial control systems. The application scenario characteristics refer to the characteristic attributes of the diode application scenario, such as electrical characteristics, environmental conditions and other characteristics.

[0082] The present invention analyzes the EMC requirements of the diode application scenario based on the application scenario characteristics to ensure that the selected rectifier diode meets the EMC requirements in the specific application scenario, reduces electromagnetic interference, and ensures stable operation of the system.

[0083] In detail, analyzing the EMC requirements of the diode application scenario based on the application scenario characteristics includes:

[0084] Analyze potential electromagnetic interference sources of the diode application scenario based on the application scenario characteristics;

[0085] determining a propagation path of the potential electromagnetic interference source;

[0086] Defining sensitive components of the diode application scenario according to the propagation path, and analyzing sensitive component characteristics of the sensitive components;

[0087] Analyzing the anti-interference capability of the sensitive component according to the characteristics of the sensitive component;

[0088] Based on the anti-interference capability, the EMC requirements of the diode application scenario are determined.

[0089] Among them, the potential electromagnetic interference source refers to the source that may generate electromagnetic interference. They can be components inside the device (such as switching power supplies, high-frequency oscillators, etc.) or factors in the external environment (such as radio transmission towers, other electronic equipment, etc.). The propagation path refers to the path of electromagnetic interference from the source to sensitive components. The propagation path can be wires, circuit board traces, space radiation, etc. The sensitive components refer to those electronic components that may be affected by electromagnetic interference and cannot work normally, such as microprocessors, sensors, communication interfaces and other components. The sensitive component characteristics refer to the electrical characteristics of sensitive components and their response characteristics to electromagnetic interference, including their sensitive frequency range, interference threshold, response time and other characteristics. The anti-interference capability refers to the ability of sensitive components to maintain normal operation in the presence of electromagnetic interference. The EMC requirements refer to the specific requirements for electromagnetic compatibility of equipment or systems in order to ensure that they can operate normally in a specific electromagnetic environment.

[0090] Optionally, the analysis of the anti-interference capability of the sensitive component according to the characteristics of the sensitive component may be performed by calculating the common mode interference anti-interference capability.

[0091] Based on the EMC requirements, the present invention determines a rectifier diode for the diode application scenario, identifies the low reverse recovery time of the rectifier diode, and when the low reverse recovery time meets a preset low reverse recovery standard time, selects the rectifier diode as the target rectifier diode for the diode application scenario. This ensures that the selected rectifier diode has a low reverse recovery time that meets the application scenario requirements, thereby reducing switching losses in high-speed switching applications and improving the electromagnetic compatibility of the overall system. The rectifier diode is a candidate semiconductor device used to convert alternating current (AC) to direct current, the low reverse recovery time refers to the time required for the rectifier diode to switch from a forward conduction state to a reverse blocking state, and the low reverse recovery standard time refers to a preset time threshold used to evaluate whether the rectifier diode is suitable for a specific application scenario. The target rectifier diode is a rectifier diode that meets all application scenario requirements (including the low reverse recovery standard time) after screening and verification.

[0092] S2. Based on the EMC requirements, identify the interference frequency range of the diode application scenario, determine the passive components and active components of the diode application scenario according to the interference frequency range, and establish a passive filter for the diode application scenario based on the passive components.

[0093] The present invention identifies the interference frequency range of the diode application scenario based on the EMC requirements, and can systematically identify the interference frequency range of the diode application scenario, providing a basis for subsequent EMC design and testing.

[0094] In detail, identifying the interference frequency range of the diode application scenario based on the EMC requirement includes:

[0095] According to the EMC requirements, identify the working principle and interference type of potential electromagnetic interference sources corresponding to the diode application scenario;

[0096] Collecting the simulated interference signal of the potential electromagnetic interference source based on the working principle and interference type;

[0097] Calculating the power spectral density of the simulated interference signal;

[0098] defining the harmonic order of the simulated interference signal;

[0099] Based on the harmonic order, the harmonic frequency of the simulated interference signal is calculated using the following formula:

[0100] f n =nf fund

[0101] Among them, f n Indicates the harmonic frequency of the analog interference signal, n indicates the harmonic number of the analog interference signal, f fund Indicates the fundamental frequency of the analog interference signal;

[0102] The interference frequency range of the potential electromagnetic interference source is determined by using the power spectrum density and the harmonic frequency.

[0103] Among them, the working principle refers to the basic functions and operating methods of the equipment or system during normal operation, the interference type refers to the type of electromagnetic interference, which can be conducted interference, radiated interference, electrostatic discharge, power line interference, etc., the simulated interference signal is a signal representing a potential electromagnetic interference source obtained through simulation or actual measurement, the power spectrum density refers to a measure that describes the distribution of signal power in frequency, the harmonic order refers to the frequency that is an integer multiple relative to the fundamental frequency, the harmonic frequency refers to an integer multiple of the fundamental frequency, the harmonic order refers to an integer multiple of the fundamental frequency, the fundamental frequency refers to the basic frequency of the system or signal, and the interference frequency range refers to the frequency range that may be generated by a potential electromagnetic interference source.

[0104] Furthermore, the calculating the power spectrum density of the simulated interference signal includes:

[0105] defining a signal frequency of the simulated interference signal;

[0106] Converting the analog interference signal into a frequency domain interference signal according to the signal frequency;

[0107] According to the signal frequency, the power spectrum density of the frequency domain interference signal is calculated using the following formula:

[0108]

[0109] Where P(f) represents the power spectral density, represents the frequency domain interference signal, f(t) represents the analog interference signal, j represents the imaginary unit, π represents the circumference ratio, f represents the signal frequency, t represents the time, and e represents the natural constant.

[0110] Among them, the signal frequency refers to the basic frequency of the analog interference signal, that is, the number of times the signal changes periodically; the frequency domain interference signal refers to the signal obtained by performing Fourier transform on the analog interference signal in the time domain; and the imaginary unit refers to the unit used to represent the phase difference and frequency component in the AC circuit.

[0111] The present invention determines the passive and active components of the diode application scenario based on the interference frequency range, ensuring that the passive and active components can effectively suppress interference in the diode application scenario and meet EMC requirements. Passive components refer to circuit elements that do not contain active materials (such as semiconductor materials), do not generate energy, and do not amplify signals, including resistors, capacitors, inductors, and other components. Active components refer to circuit elements that contain active materials (usually semiconductor materials) and can generate, amplify, or control electrical energy, including transistors, operational amplifiers, and other components.

[0112] The present invention establishes a passive filter for the diode application scenario based on the passive component, and can establish and verify a passive filter suitable for the diode application scenario to meet specific EMC and signal processing requirements.

[0113] In detail, establishing a passive filter for the diode application scenario based on the passive component includes:

[0114] Determine the filtering requirements of the diode application scenario;

[0115] Based on the filtering requirements, determining a filter type for the diode application scenario, and analyzing a cutoff frequency and bandwidth for the diode application scenario according to the filter type;

[0116] Defining the required insertion loss and filter steepness of the filter for the diode application scenario through the cutoff frequency and bandwidth;

[0117] Defining the filter order of the diode application scenario according to the required insertion loss and filter steepness of the filter;

[0118] Calculating the component values ​​of the passive components by using the filter design formula corresponding to the filter order;

[0119] Based on the component values, construct a frequency response graph of the diode application scenario;

[0120] Establishing a passive filter circuit for the diode application scenario through the frequency response diagram;

[0121] According to the passive filter circuit, a passive filter for the diode application scenario is constructed.

[0122] Among them, the filtering requirements refer to the specific requirements for suppressing interference signals or unnecessary frequency components in order to meet the performance requirements of specific application scenarios, including the frequency range that needs to be suppressed, the allowable signal distortion level, the system's sensitivity to noise and other requirements. The filter type refers to the type of filter selected according to the filtering requirements, including low-pass, high-pass, band-pass, band-stop and other types. The cutoff frequency refers to the transition point from the passband to the stopband of the filter. The bandwidth refers to the frequency range allowed to pass by the filter. The required insertion loss of the filter refers to the attenuation degree of the filter on the signal at the cutoff frequency. The filter steepness refers to the filter's slope near the cutoff frequency. The slope of the frequency response curve refers to the filter order, the filter order refers to the number of independent energy storage elements (such as capacitors and inductors) in the filter, the filter design formula refers to the mathematical equation used to calculate the value of the passive components (resistors, capacitors, inductors) in the filter, the component value refers to the specific value of each passive component in the filter, such as the ohm value of the resistor, the farad value of the capacitor, and the Henry value of the inductor. The frequency response graph refers to a graph showing the gain or attenuation of the filter at different frequencies. The passive filter circuit refers to a circuit composed of passive components (resistors, capacitors, inductors) used to achieve a specific filtering function. The passive filter refers to the actual constructed circuit.

[0123] S3. Based on the active component, establish an active filter for the diode application scenario, and combine the passive filter and the active filter to obtain a multi-stage filter.

[0124] The present invention, based on the active components, establishes an active filter for the diode application scenario, and can design and implement active low-pass, high-pass, and band-pass filters suitable for diode application scenarios to meet specific signal processing and EMC requirements. The active filter refers to an electronic filter that uses active components (such as operational amplifiers, transistors, etc.) to provide gain and energy, thereby achieving signal filtering. In detail, the active filter is mainly constructed by using an operational amplifier to form an inverting amplifier or a non-inverting amplifier structure, and combining capacitors and resistors to form an RC network.

[0125] The present invention combines the passive filter and the active filter to obtain a multi-stage filter, which can construct a multi-stage filter including both the passive filter and the active filter to achieve a more comprehensive filtering effect.

[0126] In detail, the passive filter and the active filter are combined to obtain a multi-stage filter, including:

[0127] Determining a cascade connection mode of the passive filter and the active filter;

[0128] According to the cascade mode, the passive filter and the active filter are subjected to circuit simulation fusion to obtain a simulation fusion circuit;

[0129] Calculating compatible parameters of the simulation fusion circuit;

[0130] When the compatibility parameter meets the preset compatibility standard, calculating the filtering performance of the simulation fusion circuit;

[0131] When the filtering performance meets the filtering performance standard, the passive filter and the active filter are combined according to the simulation fusion circuit to obtain the multi-stage filter.

[0132] Among them, the cascade mode refers to the connection order and method of the passive filter and the active filter in the circuit, the simulation fusion circuit refers to the fusion circuit created by combining the circuit diagrams and parameters of the passive filter and the active filter in the circuit simulation software, the compatible parameters refer to the electrical characteristic parameters required to ensure that the passive filter and the active filter can work normally together, the compatibility standard is a set of predefined parameter ranges used to evaluate whether the passive filter and the active filter can work seamlessly together, the filtering performance refers to the ability of the filter when processing signals, the filtering performance standard refers to a set of criteria used to evaluate whether the filter meets the design requirements, and the multi-stage filter refers to a filtering system composed of two or more filter cascades.

[0133] Optionally, the calculation of the compatibility parameters of the simulated fusion circuit may be analyzed by calculating a maximum allowable signal distortion, a minimum insertion loss, and a maximum reflection coefficient of the simulated fusion circuit.

[0134] S4. Establish a protection circuit for the multi-stage filter and the target rectifier diode, and construct a diode integrated circuit for the protection circuit, the multi-stage filter, and the target rectifier diode.

[0135] The present invention establishes a protection circuit for the multi-stage filter and the target rectifier diode, and can establish an effective protection circuit to protect the multi-stage filter and the rectifier diode from abnormal working conditions.

[0136] In detail, the establishment of the protection circuit of the multi-stage filter and the target rectifier diode includes:

[0137] analyzing failure modes of the multi-stage filter and the target rectifier diode;

[0138] determining protection elements of the multi-stage filter and the target rectifier diode according to the fault mode;

[0139] Mark the connection mode and component position of the protection component;

[0140] Establishing a circuit schematic diagram of the protection element according to the connection mode and element positions;

[0141] Calculating a risk factor of the circuit schematic;

[0142] When the risk coefficient meets a preset risk threshold, a protection circuit for the multi-stage filter and the target rectifier diode is constructed according to the circuit schematic.

[0143] Among them, the failure mode refers to the abnormal working state or failure condition that may occur in the multi-stage filter and the target rectifier diode during operation, such as overvoltage, overcurrent, thermal overload, transient voltage shock, etc. The protection element refers to an electronic component used to prevent the occurrence of the failure mode or mitigate its impact. The connection method refers to the wiring method of the protection element in the circuit, including series, parallel or other specific circuit configurations. The component position refers to the physical position of the protection element on the circuit board. The circuit schematic is a graphical representation that shows the connection method of all components in the circuit, including the position and connection of the protection element. The risk factor is a quantitative indicator used to evaluate the possibility of circuit failure under specific conditions. The risk threshold is a pre-set risk factor value. If the value exceeds this value, the risk of the circuit is considered unacceptable. The protection circuit refers to a group of circuits designed to prevent or mitigate the impact of the failure mode.

[0144] Furthermore, the calculating of the risk coefficient of the circuit schematic includes:

[0145] Constructing a fault tree of the circuit schematic, wherein the fault tree includes a top event and a bottom event;

[0146] Calculating the top event probability of the top event;

[0147] Analyzing the bottom event probability of the bottom event by using the top event probability;

[0148] Based on the top event probability and the bottom event probability, the risk coefficient of the circuit schematic is calculated using the following formula:

[0149] RC=1-π(1-P(Bi))*IE*CE

[0150] Where RC represents the risk coefficient of the circuit schematic, 1-π(1-P(Bi)) represents the probability of the bottom event, P(Bi) represents the probability of the top event, Bi represents the top event, IE represents the fault impact of the top event, CE represents the complexity of the circuit schematic, and π represents the product of the probabilities of the bottom events.

[0151] Among them, the top event refers to the final failure state of the circuit, the bottom event refers to the most basic event in the fault tree, which is the direct cause of the top event, usually the failure of a single component, the top event probability refers to the probability of the top event occurring, that is, the probability of the circuit failing, the bottom event probability refers to the probability of a single bottom event occurring, the risk coefficient refers to a quantitative indicator used to assess the overall risk of circuit failure, the failure impact degree refers to the impact of the top event on the system when it occurs, and the complexity refers to the complexity of the circuit schematic, reflecting the impact of design complexity on the failure probability.

[0152] Optionally, the creating of the fault tree of the circuit schematic diagram may be implemented using FTA software.

[0153] The present invention constructs a diode integrated circuit that integrates the protection circuit, the multi-stage filter, and the target rectifier diode into a single circuit, thereby ensuring the reliability and electromagnetic compatibility of the circuit. The diode integrated circuit refers to a circuit that integrates the protection circuit, the multi-stage filter, and the target rectifier diode. Specifically, the diode integrated circuit can use circuit design software to draw a schematic diagram of the rectifier diode, the protection circuit, and the multi-stage filter, and perform simulation testing on the schematic diagram to ensure the validity of the schematic diagram. When the validity meets a preset validity threshold, the diode integrated circuit that integrates the protection circuit, the multi-stage filter, and the target rectifier diode is constructed according to the schematic diagram.

[0154] S5. Simulate the diode integrated circuit to obtain EMC suppression data, calculate circuit parameter values ​​of the diode integrated circuit according to the EMC suppression data, and perform circuit optimization of the diode integrated circuit based on the circuit parameters to obtain a target integrated circuit.

[0155] It should be explained that the EMC suppression data refers to data obtained through simulation on the ability of a circuit to suppress electromagnetic interference (EMC), such as radiation interference data, conducted interference data, impedance data, and the like.

[0156] The present invention calculates the circuit parameter values ​​of the diode integrated circuit based on the EMC suppression data, thereby ensuring that the circuit parameters of the diode integrated circuit are carefully calculated and optimized to meet the requirements of EMC suppression.

[0157] In detail, the calculating of the circuit parameter value of the diode integrated circuit according to the EMC suppression data includes:

[0158] determining key circuit parameters of the diode integrated circuit based on the EMC suppression data;

[0159] calculating parameter sensitivities of the key circuit parameters;

[0160] Defining EMC suppression parameter indicators of the diode integrated circuit;

[0161] Calculating circuit parameter values ​​of the diode integrated circuit according to the EMC suppression parameter index and the parameter sensitivity.

[0162] Among them, the key circuit parameters refer to those circuit components and configurations that have a significant impact on the EMC performance of the circuit, such as component values, circuit topology and other parameters; the parameter sensitivity refers to the degree to which changes in circuit parameters affect EMC performance; the EMC suppression parameter index refers to the circuit performance target set to meet EMC standards; and the circuit parameter value refers to the value of a specific circuit component calculated based on the EMC suppression parameter index and parameter sensitivity analysis results.

[0163] Optionally, the calculating of the parameter sensitivity of the key circuit parameters may be achieved through statistical analysis.

[0164] Finally, the present invention performs circuit optimization of the diode integrated circuit based on the circuit parameters to obtain a target integrated circuit, which can optimize the design of the diode integrated circuit and obtain a target integrated circuit that meets EMC requirements.

[0165] Compared with the problems described in the background technology, firstly, through the precise analysis of the diode application scenarios and the in-depth understanding of the EMC requirements, a rectifier diode with a low reverse recovery time is selected, which not only improves the rectification efficiency, but also reduces the switching loss, thereby improving the energy efficiency and thermal stability of the entire circuit. Secondly, by identifying the interference frequency range and determining the passive components and active components accordingly, a passive and active filter is constructed. The combination of the two forms a multi-stage filter, which greatly improves the circuit's ability to suppress electromagnetic interference. This multi-stage filter design effectively reduces conducted and radiated interference, ensuring the reliable operation of the circuit in a complex electromagnetic environment. In addition, the protection circuit established is for the entire The rectifier diodes and multi-stage filters provide additional safety features, preventing damage caused by abnormal conditions such as overvoltage and overcurrent, extending the circuit's service life and reducing maintenance costs. The EMC suppression data obtained during the simulation process provides a basis for the precise calculation of circuit parameters, making circuit design more scientific and reasonable. The calculation and optimization of circuit parameter values ​​based on this data further improves circuit performance, ensuring that the circuit meets EMC standards while achieving optimal operating conditions. Ultimately, the diode integrated circuit obtained through circuit optimization not only possesses excellent EMC performance, but also maintains efficient energy conversion and stable signal processing capabilities. Therefore, the present invention can improve the EMC suppression effect of the rectifier diode.

[0166] Example 2:

[0167] like Figure 2 FIG. 1 is a functional module diagram of a simplified circuit design system of a high-efficiency EMC suppression rectifier diode according to the present invention.

[0168] The simplified circuit design system 200 for a high-performance EMC suppression rectifier diode described in the present invention can be installed in an electronic device. Depending on the functionality implemented, the simplified circuit design system for a high-performance EMC suppression rectifier diode can include a rectifier diode determination module 201, a passive filter construction module 202, a multi-stage filter construction module 203, an integrated circuit construction module 204, and an integrated circuit optimization module 205. A module, also referred to as a unit, is a series of computer program segments that can be executed by a processor in an electronic device and perform a fixed function. These modules are stored in the memory of the electronic device.

[0169] In the embodiment of the present invention, the functions of each module / unit are as follows:

[0170] The rectifier diode determination module 201 is used to determine a diode application scenario and its application scenario characteristics, analyze the EMC requirements of the diode application scenario based on the application scenario characteristics, and determine a rectifier diode for the diode application scenario based on the EMC requirements, identify the low reverse recovery time of the rectifier diode, and when the low reverse recovery time meets a preset low reverse recovery standard time, use the rectifier diode as a target rectifier diode for the diode application scenario;

[0171] The passive filter construction module 202 is configured to identify an interference frequency range of the diode application scenario based on the EMC requirement, determine passive components and active components of the diode application scenario according to the interference frequency range, and establish a passive filter for the diode application scenario based on the passive components;

[0172] The multi-stage filter construction module 203 is used to establish an active filter for the diode application scenario based on the active element, and combine the passive filter and the active filter to obtain a multi-stage filter;

[0173] The integrated circuit construction module 204 is used to establish a protection circuit for the multi-stage filter and the target rectifier diode, and to construct a diode integrated circuit for the protection circuit, the multi-stage filter, and the target rectifier diode;

[0174] The integrated circuit optimization module 205 is used to simulate the diode integrated circuit to obtain EMC suppression data, calculate circuit parameter values ​​of the diode integrated circuit based on the EMC suppression data, and perform circuit optimization of the diode integrated circuit based on the circuit parameters to obtain a target integrated circuit.

[0175] In detail, the modules in the simplified circuit design system 200 for high-efficiency EMC suppression rectifier diodes according to the embodiment of the present invention are used in the same manner as above. Figure 1 The simplified circuit design method for high-efficiency EMC suppression rectifier diodes described in the previous section is the same technical means and can produce the same technical effects, so it will not be repeated here.

[0176] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention.

[0177] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and are not limiting. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention.

Claims

1. A simplified circuit design method for a high-efficiency EMC suppression rectifier diode, characterized in that: The method comprises: Determine a diode application scenario and its application scenario characteristics, analyze the EMC requirements of the diode application scenario based on the application scenario characteristics, and determine a rectifier diode for the diode application scenario based on the EMC requirements, identify a low reverse recovery time of the rectifier diode, and when the low reverse recovery time meets a preset low reverse recovery standard time, use the rectifier diode as a target rectifier diode for the diode application scenario; Based on the EMC requirements, an interference frequency range of the diode application scenario is identified, passive components and active components of the diode application scenario are determined according to the interference frequency range, and a passive filter of the diode application scenario is established according to the passive components; Based on the active element, an active filter for the diode application scenario is established, and the passive filter and the active filter are combined to obtain a multi-stage filter; Establishing a protection circuit for the multi-stage filter and the target rectifier diode, and constructing a diode integrated circuit for the protection circuit, the multi-stage filter, and the target rectifier diode; The diode integrated circuit is simulated to obtain EMC suppression data, circuit parameter values ​​of the diode integrated circuit are calculated according to the EMC suppression data, and circuit optimization of the diode integrated circuit is performed based on the circuit parameters to obtain a target integrated circuit.

2. The simplified circuit design method for a high-efficiency EMC suppression rectifier diode according to claim 1, wherein: Analyzing the EMC requirements of the diode application scenario according to the application scenario characteristics includes: Analyze potential electromagnetic interference sources of the diode application scenario based on the application scenario characteristics; determining a propagation path of the potential electromagnetic interference source; Defining sensitive components of the diode application scenario according to the propagation path, and analyzing sensitive component characteristics of the sensitive components; Analyzing the anti-interference capability of the sensitive component according to the characteristics of the sensitive component; Based on the anti-interference capability, the EMC requirements of the diode application scenario are determined.

3. The simplified circuit design method for a high-efficiency EMC suppression rectifier diode according to claim 1, wherein: The identifying, based on the EMC requirement, an interference frequency range of the diode application scenario includes: According to the EMC requirements, identify the working principle and interference type of potential electromagnetic interference sources corresponding to the diode application scenario; Collecting the simulated interference signal of the potential electromagnetic interference source based on the working principle and interference type; Calculating the power spectral density of the simulated interference signal; defining the harmonic order of the simulated interference signal; Based on the harmonic order, the harmonic frequency of the simulated interference signal is calculated using the following formula: in, represents the harmonic frequency of the simulated interference signal, Indicates the harmonic order of the simulated interference signal, Indicates the fundamental frequency of the analog interference signal; The interference frequency range of the potential electromagnetic interference source is determined by using the power spectrum density and the harmonic frequency.

4. The simplified circuit design method for a high-efficiency EMC suppression rectifier diode according to claim 3, wherein: The calculating the power spectrum density of the simulated interference signal includes: defining a signal frequency of the simulated interference signal; Converting the analog interference signal into a frequency domain interference signal according to the signal frequency; According to the signal frequency, the power spectrum density of the frequency domain interference signal is calculated using the following formula: in, represents the power spectral density, represents the frequency domain interference signal, represents the simulated interference signal, represents the imaginary unit, represents pi, represents the signal frequency, Indicates time, Represents a natural constant.

5. The simplified circuit design method for a high-performance EMC suppression rectifier diode according to claim 1, wherein: The step of establishing a passive filter for the diode application scenario based on the passive component includes: Determine the filtering requirements of the diode application scenario; Based on the filtering requirements, determining a filter type for the diode application scenario, and analyzing a cutoff frequency and bandwidth for the diode application scenario according to the filter type; Defining the required insertion loss and filter steepness of the filter for the diode application scenario through the cutoff frequency and bandwidth; Defining the filter order of the diode application scenario according to the required insertion loss and filter steepness of the filter; Calculating the component values ​​of the passive components by using the filter design formula corresponding to the filter order; Based on the component values, construct a frequency response graph of the diode application scenario; Establishing a passive filter circuit for the diode application scenario through the frequency response diagram; According to the passive filter circuit, a passive filter for the diode application scenario is constructed.

6. The simplified circuit design method for a high-efficiency EMC suppression rectifier diode according to claim 1, wherein: The passive filter and the active filter are combined to obtain a multi-stage filter, comprising: Determining a cascade connection mode of the passive filter and the active filter; According to the cascade mode, the passive filter and the active filter are subjected to circuit simulation fusion to obtain a simulation fusion circuit; Calculating compatible parameters of the simulation fusion circuit; When the compatibility parameter meets the preset compatibility standard, calculating the filtering performance of the simulation fusion circuit; When the filtering performance meets the preset filtering performance standard, the passive filter and the active filter are combined according to the simulation fusion circuit to obtain the multi-stage filter.

7. The simplified circuit design method for a high-performance EMC suppression rectifier diode according to claim 1, wherein: The protection circuit for establishing the multi-stage filter and the target rectifier diode includes: analyzing failure modes of the multi-stage filter and the target rectifier diode; determining protection elements of the multi-stage filter and the target rectifier diode according to the fault mode; Mark the connection mode and component position of the protection component; Establishing a circuit schematic diagram of the protection element according to the connection mode and element positions; Calculating a risk factor of the circuit schematic; When the risk coefficient meets a preset risk threshold, a protection circuit for the multi-stage filter and the target rectifier diode is constructed according to the circuit schematic.

8. The simplified circuit design method for a high-efficiency EMC suppression rectifier diode according to claim 7, wherein: Calculating the risk coefficient of the circuit schematic diagram includes: Constructing a fault tree of the circuit schematic, wherein the fault tree includes a top event and a bottom event; Calculating the top event probability of the top event; Analyzing the bottom event probability of the bottom event by using the top event probability; Based on the top event probability and the bottom event probability, the risk coefficient of the circuit schematic is calculated using the following formula: in, represents the risk factor of the circuit schematic, represents the probability of the bottom event, represents the probability of the top event, Indicates the top event, Indicates the fault impact of the top event, Indicates the complexity of the circuit schematic, represents the product of the probabilities of the underlying events.

9. The simplified circuit design method for a high-performance EMC suppression rectifier diode according to claim 1, wherein: Calculating circuit parameter values ​​of the diode integrated circuit according to the EMC suppression data includes: determining key circuit parameters of the diode integrated circuit based on the EMC suppression data; calculating parameter sensitivities of the key circuit parameters; Defining EMC suppression parameter indicators of the diode integrated circuit; Calculating circuit parameter values ​​of the diode integrated circuit according to the EMC suppression parameter index and the parameter sensitivity.

10. A simplified circuit design system for a high-performance EMC suppression rectifier diode, characterized in that: The system comprises: a rectifier diode determination module, configured to determine a diode application scenario and its application scenario characteristics, analyze the EMC requirements of the diode application scenario based on the application scenario characteristics, determine a rectifier diode for the diode application scenario based on the EMC requirements, identify a low reverse recovery time of the rectifier diode, and use the rectifier diode as a target rectifier diode for the diode application scenario when the low reverse recovery time meets a preset low reverse recovery standard time; A passive filter construction module is used to identify the interference frequency range of the diode application scenario based on the EMC requirements, determine the passive components and active components of the diode application scenario according to the interference frequency range, and establish a passive filter for the diode application scenario based on the passive components; A multi-stage filter construction module, configured to establish an active filter for the diode application scenario based on the active element, and to combine the passive filter and the active filter to obtain a multi-stage filter; an integrated circuit construction module, configured to establish a protection circuit for the multi-stage filter and the target rectifier diode, and to construct a diode integrated circuit for the protection circuit, the multi-stage filter, and the target rectifier diode; The integrated circuit optimization module is used to simulate the diode integrated circuit to obtain EMC suppression data, calculate circuit parameter values ​​of the diode integrated circuit based on the EMC suppression data, and perform circuit optimization of the diode integrated circuit based on the circuit parameters to obtain a target integrated circuit.

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