A method for improving diamond bonding effect based on argon atom repair technology

Abstract

The present invention relates to a method for improving diamond bonding performance based on argon atomic repair technology, comprising: roughly polishing a first diamond and cleaning the semiconductor and the polished first diamond; depositing a first intermediate layer on the cleaned surface of the first diamond and a second intermediate layer on the cleaned surface of the semiconductor, wherein the first intermediate layer and the second intermediate layer are made of the same material; etching the first intermediate layer and the second intermediate layer using argon atomic beam repair technology based on determined surface etching parameters until the thickness and roughness of the first intermediate layer meet preset conditions, thereby obtaining the etched first intermediate layer and the etched second intermediate layer; and bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor. This method solves the problem of difficulty in bonding ultra-thin intermediate layers due to diamond surface roughness, while simultaneously ensuring both stable bonding between diamond and semiconductor materials and efficient heat dissipation performance.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor devices, and in particular relates to a method for improving diamond bonding effect based on argon atom repair technology. Background Art

[0002] As semiconductor devices progress toward ever-increasing miniaturization and integration, coupled with the rapid advancement of artificial intelligence and 5G communications, their power density and the resulting heat generation are increasing dramatically. Effective thermal management technologies have become crucial for maintaining superior device performance and long-term reliability. Among all natural materials, diamond, with its ultra-high thermal conductivity exceeding 2000 W / m·K, far surpasses conventional semiconductor materials, making it the material of choice for optimizing heat dissipation. Diamond film or diamond particle coating technology has become a core solution widely used in the thermal management field.

[0003] Currently, the mainstream process for integrating diamond thin films with semiconductor materials uses materials such as silicon (Si) and aluminum nitride (AlN) as transition layers to mitigate the stress imbalance caused by the lattice mismatch and thermal expansion coefficient difference between diamond and other semiconductor materials. The mainstream bonding technologies for diamond and device epitaxial layer materials are divided into two categories: high-temperature bonding and room-temperature surface activation bonding. Both of these mature bonding technologies rely on intermediate layer materials to mitigate the lattice mismatch and thermal expansion difference between diamond and the bonded semiconductor material.

[0004] Due to the mismatch in physical properties, diamond and mainstream semiconductor materials always face severe technical bottlenecks during the interface bonding process.

[0005] In high-temperature bonding, high temperatures are used to promote the bonding between diamond and semiconductor materials. While this method improves bonding to a certain extent, the process is complex, and the thermal stress introduced by high-temperature treatment can adversely affect the material, leading to degradation of the device's electrical performance. In certain applications, this stress accumulation can affect the long-term stability and reliability of the device.

[0006] In conventional low-temperature bonding, a thicker intermediate layer material is usually used to alleviate the physical mismatch between diamond and other semiconductor materials. This solution solves the problem of the intermediate layer material inheriting the surface roughness of diamond, but the thicker intermediate layer material makes the boundary thermal resistance of the current diamond bonding greater than 50m 2 K / GW, which severely limits the thermal conductivity of diamond, thereby affecting its efficiency in high-performance heat dissipation applications.

[0007] In existing room-temperature surface activation bonding methods, the use of an ultra-thin intermediate layer requires the roughness of the bonding surface to be less than 1nm. However, due to the extremely high hardness of diamond, traditional chemical mechanical polishing (CMP) processes are difficult to meet the high flatness requirements of the bonding interface. As a result, the diamond bonding area using traditional CMP processes is less than 50%, and the success rate is low. This requires the use of complex chemical mechanical polishing of the diamond surface, and this more sophisticated polishing process not only increases production costs but also limits the large-scale application and commercialization of this technology.

[0008] Therefore, the existing solutions have a trade-off between interface stability and thermal conductivity, and cannot take into account both the stability of the bonding between diamond and semiconductor materials and the efficient heat dissipation performance. At the same time, they have the defect of high production costs. Summary of the Invention

[0009] In order to solve the above problems existing in the prior art, the present invention provides a method for improving the diamond bonding effect based on argon atom repair technology. The technical problem to be solved by the present invention is achieved through the following technical solutions:

[0010] The embodiment of the present invention provides a method for improving diamond bonding effect based on argon atom repair technology, comprising the steps of:

[0011] S1, performing rough polishing on the first diamond, and cleaning the semiconductor and the polished first diamond;

[0012] S2. Depositing a first intermediate layer on the cleaned first diamond surface, and depositing a second intermediate layer on the cleaned semiconductor surface, wherein the first intermediate layer and the second intermediate layer are made of the same material;

[0013] S3. Based on the surface etching parameters determined in the preliminary experiment, the first intermediate layer and the second intermediate layer are etched using an argon atomic beam repair technique until the thickness and roughness of the first intermediate layer meet preset conditions, thereby obtaining an etched first intermediate layer and an etched second intermediate layer; the preset conditions include: the roughness is less than a preset roughness and the thickness is less than a preset thickness;

[0014] S4. Bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor.

[0015] In one embodiment of the present invention, the material of the semiconductor includes any one of Si, SiC, GaN, and GaO;

[0016] The materials of the first intermediate layer and the second intermediate layer include any one of Si, Al2O3, AlN, and BN.

[0017] In one embodiment of the present invention, the roughness of the polished first diamond is less than 2 nm.

[0018] In one embodiment of the present invention, step S2 includes:

[0019] The first intermediate layer is deposited on the cleaned first diamond surface by sputtering using a room temperature bonding machine, and the second intermediate layer is deposited on the cleaned semiconductor surface at the same time.

[0020] In one embodiment of the present invention, the thickness of the first intermediate layer and the thickness of the second intermediate layer are both 10 nm-20 nm.

[0021] In one embodiment of the present invention, the method for determining the surface etching parameters comprises the steps of:

[0022] performing rough polishing and cleaning on the second diamond in sequence to obtain a cleaned second diamond;

[0023] Depositing a third intermediate layer on the cleaned second diamond surface; wherein the material of the third intermediate layer is the same as that of the first intermediate layer;

[0024] Within a preset time, etching the third intermediate layer using an argon atomic beam repair technology to control the thickness and roughness of the third intermediate layer;

[0025] When the thickness and roughness of the third intermediate layer after etching do not meet the preset conditions, the third intermediate layer is repeatedly etched using the argon atomic beam repair technology; when the thickness and roughness of the third intermediate layer after etching meet the preset conditions, the etching vacuum, etching voltage, etching current and total etching time are determined to obtain the surface etching parameters.

[0026] In one embodiment of the present invention, the etching vacuum degree is less than 1.5*10 -5 Pa, the etching voltage is 1000-1500 V, the etching current is 50-500 mA, the preset time is 30-50 s, and the total etching time is an integer multiple of the preset time.

[0027] In one embodiment of the present invention, the preset conditions include: roughness less than 1 nm and thickness less than 10 nm.

[0028] In one embodiment of the present invention, the interface thermal resistance of the intermediate layer formed by bonding the etched first intermediate layer and the etched second intermediate layer is less than 10m 2 K / GW.

[0029] In one embodiment of the present invention, step S4 includes:

[0030] Using a room temperature bonding machine, the temperature is room temperature and the vacuum degree is less than 1.5*10 -5 Pa, a pressure of 0.1 to 20 MPa is applied to the front faces of the etched first intermediate layer and the etched second intermediate layer for bonding, and the bonding time is 200 to 500 s to achieve bonding between the first diamond and the semiconductor.

[0031] Compared with the prior art, the present invention has the following beneficial effects:

[0032] 1. The method of the present invention uses argon atomic beam repair technology to etch the first intermediate layer, transforming the problem of physical property mismatch between diamond and common semiconductor surfaces into an optimization problem of the intermediate layer material. The roughness of the intermediate layer is optimized through interface engineering, achieving effective regulation of the diamond bonding interface. This effectively solves the difficulty of bonding an ultra-thin intermediate layer caused by diamond surface roughness, reduces the strict requirements for diamond roughness, and significantly reduces the high process costs caused by the difficulty of fine CMP polishing of diamond.

[0033] 2. The method of the present invention uses argon atomic beam repair technology to etch the first intermediate layer, while simultaneously polishing and thinning the intermediate layer. This breaks the trade-off between diamond surface roughness and intermediate layer thickness, not only resolving the problem of relying on the thickness of the intermediate layer to weaken the diamond surface roughness, but also allows for further thinning of the intermediate layer material without adding additional process steps. This overcomes the limitation that the presence of an excessively thick intermediate layer significantly hinders the heat dissipation path, achieving lower intermediate layer interface thermal resistance, and maximizing the high efficiency of diamond as a heat dissipation layer, while taking into account both the stability of the bond between diamond and semiconductor materials and efficient heat dissipation performance.

[0034] 3. In the present invention, the deposition, etching and bonding of the intermediate layer are all carried out in a room temperature bonding machine. The integration of the equipment enables the entire bonding method to be implemented in the bonding machine, thereby improving the bonding effect and success rate. The bonding area is close to 100%, and the success rate is close to 100%, ensuring the reliability and stability of the process. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] Figure 1 A schematic flow chart of a method for improving diamond bonding effect based on argon atom repair technology provided by an embodiment of the present invention;

[0036] Figure 2a-2d A schematic diagram of the process of a method for improving diamond bonding effect based on argon atom repair technology provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0037] The present invention will be further described in detail below with reference to specific examples, but the embodiments of the present invention are not limited thereto.

[0038] Example 1

[0039] See Figure 1 , Figure 1 A schematic flow chart of a method for improving diamond bonding effect based on argon atom repair technology provided by an embodiment of the present invention. The method for improving diamond bonding effect based on argon atom repair technology comprises the following steps:

[0040] S1, performing rough polishing on the first diamond, and cleaning the semiconductor and the polished first diamond;

[0041] S2, depositing a first intermediate layer on the cleaned first diamond surface, and depositing a second intermediate layer on the cleaned semiconductor surface, wherein the first intermediate layer and the second intermediate layer are made of the same material;

[0042] S3. Based on the surface etching parameters determined in the preliminary experiment, the first intermediate layer and the second intermediate layer are etched using an argon atomic beam repair technique until the thickness and roughness of the first intermediate layer meet preset conditions, thereby obtaining the etched first intermediate layer and the etched second intermediate layer; the preset conditions include: the roughness is less than a preset roughness and the thickness is less than a preset thickness;

[0043] S4. Bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor.

[0044] In a specific embodiment, the material of the semiconductor includes but is not limited to any one of Si, SiC, GaN, and GaO; the materials of the first intermediate layer and the second intermediate layer include but are not limited to any one of Si, Al2O3, AlN, and BN.

[0045] The bonding method of this embodiment is suitable for efficient bonding of Si, SiC, GaN, GaO, and other common semiconductor materials with diamond, expanding the applicability and versatility of the technology. Furthermore, the intermediate layer material processing solution demonstrates excellent results when using Si as the intermediate layer, while also exhibiting good compatibility with other intermediate materials such as Al2O3, AlN, and BN, ensuring the process's multi-material applicability and enhancing flexibility in material selection.

[0046] See Figure 2a-2d , Figure 2a-2dA schematic diagram of the process of improving diamond bonding performance based on argon atom repair technology provided by an embodiment of the present invention. Taking the semiconductor as a single-crystal GaN with a roughness Ra of less than 0.3nm, the intermediate layer material as an amorphous Si nanolayer, and the diamond material prepared by microwave plasma chemical vapor deposition as an example, the method for improving diamond bonding performance based on argon atom repair technology includes the following steps:

[0047] S1. Roughly polishing the first diamond, and cleaning the semiconductor and the polished first diamond.

[0048] First, the first diamond is roughly polished using a chemical mechanical polishing process (CMP), and the roughness of the first diamond after polishing is controlled to be less than 2nm. The specific polishing method is as follows: first, a suitable polishing liquid is selected; then, the polishing parameters of the CMP equipment are set: the polishing disk speed is 70rpm, the polishing head speed is 23rpm, and the polishing temperature is 50℃; then, the first diamond is placed in the CMP equipment and polishing is started until the roughness of the first diamond is less than 2nm, and polishing is stopped to obtain the polished first diamond, as shown in FIG. Figure 2a As shown, Figure 2a This is a schematic diagram of diamond after traditional CMP polishing. It can be seen that the traditional CMP polishing process cannot achieve a flat diamond surface.

[0049] The polished first diamond and the semiconductor material to be bonded are then cleaned simultaneously to ensure that no particles remain on the surfaces of the first diamond and the semiconductor. Specifically, the CMP-polished diamond and single-crystal GaN material are first ultrasonically cleaned in an acetone solution for 3 minutes at an ultrasonic intensity of 3.0. The sample is then heated in a water bath at a temperature of 60°C for 5 minutes in a stripping solution. The sample is then ultrasonically cleaned in an acetone solution and then in an ethanol solution for 3 minutes at an ultrasonic intensity of 3.0. The sample is then ultrasonically cleaned in deionized water for 5 minutes at an ultrasonic intensity of 3.0. Finally, the sample is dried using high-purity nitrogen to ensure that no particles remain.

[0050] S2. Depositing a first intermediate layer on the cleaned first diamond surface, and depositing a second intermediate layer on the cleaned semiconductor surface, wherein the first intermediate layer and the second intermediate layer are made of the same material.

[0051] Specifically, a first intermediate layer is deposited on the surface of the cleaned first diamond by sputtering using a room temperature bonding machine, and a second intermediate layer is deposited on the surface of the cleaned semiconductor. The specific process is as follows: the cleaned first diamond and the cleaned semiconductor are placed in the bonding machine, and the vacuum degree of the bonding machine is set to less than 1.5*10 -5Pa, depositing 10nm-20nm amorphous Si nanolayers on the first diamond surface and the GaN material surface by sputtering to form the first intermediate layer and the second intermediate layer, such as Figure 2b As shown, Figure 2b In the case of diamonds, the intermediate layer material inherits the roughness of the diamond surface, which can lead to poor bonding.

[0052] S3. Based on the surface etching parameters determined in the preliminary experiment, the first intermediate layer and the second intermediate layer are etched using argon atomic beam repair technology until the thickness and roughness of the first intermediate layer meet preset conditions, thereby obtaining the etched first intermediate layer and the etched second intermediate layer; the preset conditions include: the roughness is less than the preset roughness and the thickness is less than the preset thickness.

[0053] Specifically, keep it less than 1.5*10 -5 The vacuum degree of Pa is set, and based on the surface etching parameters determined in the pre-experiment, the first intermediate layer on the surface of the first diamond and the second intermediate layer on the surface of the single crystal GaN material are etched using an argon atomic beam in a room temperature bonding machine. The roughness and thickness of the first intermediate layer and the second intermediate layer are simultaneously controlled to achieve polishing and thinning of the first intermediate layer and the second intermediate layer. When the thickness and roughness of the first intermediate layer meet the preset conditions, the etching is stopped to obtain the etched first intermediate layer and the etched second intermediate layer, as shown in FIG. Figure 2c As shown, Figure 2c It shows that the etching effect of argon atomic beam repair technology can simultaneously achieve the fine flatness and controllable thinning effect of the amorphous Si nanolayer on the diamond surface.

[0054] The preset conditions include: the roughness is less than a preset roughness and the thickness is less than a preset thickness. Exemplarily, the preset conditions are that the roughness is less than 1 nm and the thickness is less than 10 nm.

[0055] Furthermore, through the etching effect of the argon atomic beam repair technology, the fine flatness and controllable thinning effect of the first intermediate layer on the first diamond surface can be achieved simultaneously.

[0056] In the process of etching the first intermediate layer using the argon atomic beam repair technology in this embodiment, the argon atomic beam not only breaks the chemical bonds on the surface of the material, but also knocks off the atoms on the surface of the material, thereby achieving the effects of polishing and thinning, and realizing the controllable thickness and roughness of the intermediate layer.

[0057] S4. Bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor.

[0058] Specifically, the first intermediate layer after etching and the second intermediate layer after etching are bonded by using a room temperature bonding machine, that is, the temperature is room temperature and the vacuum degree is maintained at less than 1.5*10 -5Under the condition of Pa, the active Si nano-surface of GaN material and the active Si nano-surface of diamond are bonded with a pressure of 0.1-20 MPa for a bonding time of 200-500 s to achieve the first bonding between diamond and semiconductor. Figure 2d shown.

[0059] Specifically, the interface thermal resistance of the intermediate layer formed by bonding the first intermediate layer after etching and the second intermediate layer after etching is less than 10m 2 K / GW. It can be understood that the first intermediate layer after etching and the second intermediate layer after etching are integrated to form an intermediate layer between the first diamond and the semiconductor. The interface thermal resistance of the intermediate layer will be less than 10m 2 K / GW, the interface thermal resistance is less than one-fifth of the conventional bonding boundary thermal resistance.

[0060] The integration of the equipment in this embodiment enables the entire bonding method to be implemented in a bonding machine, improving the bonding effect and success rate. The bonding area is close to 100%, and the success rate is close to 100%, ensuring the reliability and stability of the process.

[0061] The method of this embodiment uses argon atomic beam repair technology to etch the first intermediate layer, transforming the problem of mismatch between the physical properties of diamond and common semiconductor surfaces into an optimization problem of the intermediate layer material. The roughness of the intermediate layer is optimized through interface engineering, thereby achieving effective regulation of the diamond bonding interface, effectively solving the problem of uneven surface of the intermediate layer caused by the roughness of the diamond surface, lowering the strict requirements for diamond roughness, and significantly reducing the high process costs caused by the difficulty of fine CMP polishing of diamond, thereby improving the economy and operability of the process.

[0062] The method of this embodiment uses argon atomic beam repair technology to etch the first intermediate layer, while simultaneously polishing and thinning the intermediate layer, breaking the trade-off between diamond surface roughness and intermediate layer thickness. It not only solves the problem of relying on the thickness of the intermediate layer to weaken the diamond surface roughness, but also can further thin the intermediate layer material without adding additional process steps, overcoming the limitation that the presence of an excessively thick intermediate layer will significantly hinder the heat dissipation path, achieving lower intermediate layer interface thermal resistance, and liberating the high efficiency performance of diamond as a heat dissipation layer to a greater extent, taking into account the stability of the bonding between diamond and semiconductor materials and the efficient heat dissipation performance; in addition, the integrated design of the equipment ensures the reliability and stability of the process, making the diamond bonding area close to 100% and the success rate close to 100%.

[0063] This embodiment utilizes the argon atom repair technology of the room temperature bonding machine, which not only completes the equipment integration of the process steps, but also, after determining the parameters of the appropriate diamond argon atom repair technology, performs fine processing on the diamond bonded intermediate layer material without adding additional process steps, thereby realizing the etching of the intermediate layer material. The entire process can be realized in the bonding machine, thereby improving the bonding effect and success rate, and ensuring the reliability and stability of the process.

[0064] Example 2

[0065] Based on the first embodiment, this embodiment provides a method for determining surface etching parameters, which includes the following steps:

[0066] S1. Roughly polishing and cleaning the second diamond in sequence to obtain a cleaned second diamond.

[0067] Specifically, first, the second diamond is roughly polished using the chemical mechanical polishing process (CMP). The polishing method is as follows: first, a suitable polishing liquid is selected; then, the polishing parameters of the CMP equipment are set: the polishing disk speed is 70 rpm, the polishing head speed is 23 rpm, and the polishing temperature is 50°C; then, the second diamond is placed in the CMP equipment and polishing begins, and the roughness of the second diamond is controlled to be less than 2 nm; finally, the roughness of the polished diamond is measured and the results are recorded.

[0068] Then, the polished second diamond was cleaned. The cleaning process was as follows: first, the CMP-polished second diamond was placed in an acetone solution for ultrasonic cleaning for 3 minutes with an ultrasonic intensity of 3.0; then, the sample was placed in a water bath in a stripping solution at a temperature of 60°C and heated for 5 minutes; then, the sample was placed in an acetone solution and an ethanol solution in sequence for ultrasonic cleaning for 3 minutes with an ultrasonic intensity of 3.0; immediately afterwards, the sample was placed in deionized water for ultrasonic cleaning for 5 minutes with an ultrasonic intensity of 3.0; finally, the sample was dried using high-purity nitrogen to ensure that no particles remained.

[0069] S2. Depositing a third intermediate layer on the cleaned second diamond surface; wherein the material of the third intermediate layer is the same as that of the first intermediate layer.

[0070] Specifically, the cleaned first diamond and the cleaned semiconductor are placed in a bonding machine, and the vacuum degree of the bonding machine is set to be less than 1.5*10 -5 Pa, a third intermediate layer of 10nm-20nm is deposited on the second diamond surface by sputtering. The material of the third intermediate layer is the same as that of the first intermediate layer. Exemplarily, the third intermediate layer is an amorphous Si nanolayer.

[0071] S4. Within a preset time, use an argon atomic beam repair technology to etch the third intermediate layer to control the thickness and roughness of the third intermediate layer.

[0072] Specifically, keep it less than 1.5*10 -5 Pa, and continue to etch the third intermediate layer on the second diamond surface with the argon atomic beam in the bonding machine. The surface roughness and thickness of the third intermediate layer are controlled by the etching effect of the argon atomic beam, and the preset etching time is set to 30-50s.

[0073] S5. When the thickness and roughness of the third intermediate layer after etching do not meet the preset conditions, the third intermediate layer is repeatedly etched using argon atomic beam repair technology, that is, step S4 is repeated; when the thickness and roughness of the third intermediate layer after etching meet the preset conditions, the etching vacuum, etching voltage, etching current and total etching time are determined to obtain surface etching parameters.

[0074] Specifically, a diamond sample is removed from a room temperature bonding machine, and the surface roughness of the third intermediate layer on the second diamond surface is measured using an atomic force microscope (AFM), and the thickness of the third intermediate layer on the second diamond surface is measured using a scanning electron microscope (SEM). When the roughness of the third intermediate layer on the diamond surface meets the requirements of less than 1 nm and a thickness of less than 10 nm, the key parameters used in steps S1-S4 are recorded and used as standard surface etching parameters; the surface etching parameters include the roughness of the diamond material during the initial CMP, the model of the room temperature bonding machine and the etching vacuum level, the target material used (the material of the third intermediate layer), the operating conditions (etching voltage, etching current), and the total etching time.

[0075] For example, the etching vacuum is less than 1.5*10 -5 Pa, the etching voltage is 1000-1500V, the etching current is 50-500mA, the preset time is 30-50s, and the total etching time is an integer multiple of the preset time. Preferably, the etching voltage is 1150V-1250V, and the etching current is 150-250mA.

[0076] It can be understood that when the third intermediate layer on the second diamond surface after argon atom beam etching does not meet the expected results of the argon atom beam repair technology, it is not necessary to use a new diamond material to conduct another experiment; after cleaning the second diamond sample etched by the argon atom beam, the argon atom beam etching of step S4 can be directly repeated to further reduce the experimental cost and time. Then, the roughness and thickness of the sample that has been etched by the argon atom beam again are evaluated; when the result meets the expectation, the sum of the etching time during the iterative process of the argon atom beam etching is determined as the total etching time of the argon atom beam repair technology, thereby determining the surface etching parameters; when the result does not meet the expectation, repeat step S4 to perform argon atom beam etching. Afterwards, a new preliminary experiment is carried out with the surface etching parameters determined after the iteration to ensure the accuracy of the parameters and the repeatability of the experiment.

[0077] It should be noted that once the surface etching parameters are determined, the determined surface etching parameters can be directly used to bond other diamond samples of the same type. For different types of diamond samples, the surface etching parameters need to be re-determined.

[0078] The method for determining the surface etching parameters of this embodiment has an excellent iterative process. The method can balance the bonding effect and the actual economic cost to realize the process scheme of the diamond interface repair technology for different expected products. The method has broad commercial application prospects and provides a solid technical foundation and guarantee for future large-scale industrialization.

[0079] The above is a further detailed description of the present invention in conjunction with specific preferred embodiments, and the specific implementation of the present invention should not be considered to be limited to these descriptions. For those skilled in the art of the present invention, without departing from the concept of the present invention, several simple deductions or substitutions can be made, which should be considered to fall within the scope of protection of the present invention.

Claims

1. A method for improving diamond bonding effect based on argon atom repair technology, characterized in that: Including steps: S1, performing rough polishing on the first diamond, and cleaning the semiconductor and the polished first diamond; S2. Depositing a first intermediate layer on the cleaned first diamond surface, and depositing a second intermediate layer on the cleaned semiconductor surface, wherein the first intermediate layer and the second intermediate layer are made of the same material; S3. Based on the surface etching parameters determined in the preliminary experiment, the first intermediate layer and the second intermediate layer are etched using an argon atomic beam repair technique until the thickness and roughness of the first intermediate layer meet preset conditions, thereby obtaining an etched first intermediate layer and an etched second intermediate layer; the preset conditions include: the roughness is less than a preset roughness and the thickness is less than a preset thickness; S4. Bonding the etched first intermediate layer and the etched second intermediate layer to achieve bonding between the first diamond and the semiconductor.

2. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: The material of the semiconductor includes any one of Si, SiC, GaN, and GaO; The materials of the first intermediate layer and the second intermediate layer include any one of Si, Al2O3, AlN, and BN.

3. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: The roughness of the polished first diamond is less than 2 nm.

4. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: Step S2 includes: The first intermediate layer is deposited on the cleaned first diamond surface by sputtering using a room temperature bonding machine, and the second intermediate layer is deposited on the cleaned semiconductor surface at the same time.

5. The method for improving diamond bonding effect based on argon atom repair technology according to claim 4, characterized in that: The thickness of the first intermediate layer and the thickness of the second intermediate layer are both 10 nm to 20 nm.

6. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: The method for determining the surface etching parameters comprises the steps of: performing rough polishing and cleaning on the second diamond in sequence to obtain a cleaned second diamond; Depositing a third intermediate layer on the cleaned second diamond surface; wherein the material of the third intermediate layer is the same as that of the first intermediate layer; Within a preset time, etching the third intermediate layer using an argon atomic beam repair technology to control the thickness and roughness of the third intermediate layer; When the thickness and roughness of the third intermediate layer after etching do not meet the preset conditions, the third intermediate layer is repeatedly etched using the argon atomic beam repair technology; when the thickness and roughness of the third intermediate layer after etching meet the preset conditions, the etching vacuum, etching voltage, etching current and total etching time are determined to obtain the surface etching parameters.

7. The method for improving diamond bonding effect based on argon atom repair technology according to claim 6, characterized in that: The etching vacuum degree is less than 1.5*10 -5 Pa, the etching voltage is 1000-1500 V, the etching current is 50-500 mA, the preset time is 30-50 s, and the total etching time is an integer multiple of the preset time.

8. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1 or 6, characterized in that: The preset conditions include: roughness less than 1 nm and thickness less than 10 nm.

9. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: The interface thermal resistance of the intermediate layer formed by bonding the first intermediate layer after etching and the second intermediate layer after etching is less than 10m 2 K / GW.

10. The method for improving diamond bonding effect based on argon atom repair technology according to claim 1, characterized in that: Step S4 includes: Using a room temperature bonding machine, the temperature is room temperature and the vacuum degree is less than 1.5*10 -5 Pa, a pressure of 0.1 to 20 MPa is applied to the front faces of the etched first intermediate layer and the etched second intermediate layer for bonding, and the bonding time is 200 to 500 s to achieve bonding between the first diamond and the semiconductor.

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