Power module packaging structure of integrated protection circuit

By setting a capacitor integration zone on the second DBC substrate of the power module package structure, forming a protective capacitance and connecting it with the power chip electrode, the problem of difficulty in integrating a protection circuit in the traditional packaging structure is solved, effective suppression of voltage spikes and improvement of module stability is achieved, and the preparation process is simplified and the cost is reduced.

CN119650541AActive Publication Date: 2025-03-18JIANGSU SOLID POWER SEMICON CO LTD
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Patent Information

Application Number
CN202411749966.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-02
Publication Date
2025-03-18
Estimated Expiration
2044-12-02

AI Technical Summary

Technical Problem

In traditional power module packaging structures, it is difficult to install additional protection circuits in the original packaging structure, especially the soldering of capacitors is complex and costly.

Method used

A power module package structure with integrated protection circuit is designed. By setting a capacitor integration zone on the second DBC substrate, a protective capacitor is formed using an insulating dielectric layer and a conductive layer, and electrically connected to the electrode of the power chip, the integration of the protection circuit is achieved.

Benefits of technology

It effectively suppresses voltage spikes in the IGBT power module when it is turned off, improves the stability and flow capacity of the module, while simplifying the preparation process and reducing costs.

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Abstract

The invention discloses a power module packaging structure of an integrated protection circuit, and relates to the technical field of semiconductor packaging, the packaging structure comprises a supporting substrate, and a first DBC substrate and a second DBC substrate arranged on the supporting substrate; at least one power chip is arranged on the first DBC substrate; the second DBC substrate comprises a capacitor integration area, and at least one capacitor module is arranged in the capacitor integration area; the capacitor module comprises a first insulating dielectric layer prepared on the capacitor integration region and a first conductive layer prepared on the first insulating dielectric layer; and forming a protection capacitor based on the capacitor integration region, the first insulating dielectric layer and the first conductive layer, wherein the protection capacitor is electrically connected between the first electrode and the second electrode of the power chip. The protection circuit can be integrated in the packaging structure, and the protection capacitor in the protection circuit is formed through the stacked first insulating dielectric layer and the first conductive layer, so that the preparation process is simplified, and the preparation cost is saved.
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